JPH11217502A - Photosensitive polyimide precursor solution, polyimide coated film obtained therefrom and production of the same - Google Patents
Photosensitive polyimide precursor solution, polyimide coated film obtained therefrom and production of the sameInfo
- Publication number
- JPH11217502A JPH11217502A JP2293798A JP2293798A JPH11217502A JP H11217502 A JPH11217502 A JP H11217502A JP 2293798 A JP2293798 A JP 2293798A JP 2293798 A JP2293798 A JP 2293798A JP H11217502 A JPH11217502 A JP H11217502A
- Authority
- JP
- Japan
- Prior art keywords
- polyimide precursor
- precursor solution
- general formula
- compound
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920001721 polyimide Polymers 0.000 title claims description 99
- 239000004642 Polyimide Substances 0.000 title claims description 93
- 239000002243 precursor Substances 0.000 title claims description 52
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 150000001875 compounds Chemical class 0.000 claims abstract description 42
- 239000002904 solvent Substances 0.000 claims abstract description 20
- 150000003839 salts Chemical class 0.000 claims abstract description 12
- 125000003277 amino group Chemical group 0.000 claims abstract description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 9
- 125000003118 aryl group Chemical group 0.000 claims abstract description 9
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 7
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims abstract description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims description 36
- 239000011248 coating agent Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 7
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 abstract description 10
- 229910001410 inorganic ion Inorganic materials 0.000 abstract description 7
- 239000000126 substance Substances 0.000 abstract description 7
- 239000002798 polar solvent Substances 0.000 abstract description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 abstract description 3
- 229910017053 inorganic salt Inorganic materials 0.000 abstract description 3
- NLGDWWCZQDIASO-UHFFFAOYSA-N 2-hydroxy-1-(7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-yl)-2-phenylethanone Chemical compound OC(C(=O)c1cccc2Oc12)c1ccccc1 NLGDWWCZQDIASO-UHFFFAOYSA-N 0.000 abstract description 2
- 230000001588 bifunctional effect Effects 0.000 abstract 1
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 18
- 229920000642 polymer Polymers 0.000 description 13
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- -1 chlorine ions Chemical class 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 7
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 6
- 150000004985 diamines Chemical class 0.000 description 5
- 229920005575 poly(amic acid) Polymers 0.000 description 5
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- 206010034972 Photosensitivity reaction Diseases 0.000 description 4
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 4
- 230000002411 adverse Effects 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- 150000008064 anhydrides Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000036211 photosensitivity Effects 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 3
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical group Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 150000005690 diesters Chemical class 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000012046 mixed solvent Substances 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 3
- 229920002818 (Hydroxyethyl)methacrylate Polymers 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- HCGFUIQPSOCUHI-UHFFFAOYSA-N 2-propan-2-yloxyethanol Chemical compound CC(C)OCCO HCGFUIQPSOCUHI-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 description 2
- 150000003949 imides Chemical group 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000006798 ring closing metathesis reaction Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- DNIAPMSPPWPWGF-VKHMYHEASA-N (+)-propylene glycol Chemical compound C[C@H](O)CO DNIAPMSPPWPWGF-VKHMYHEASA-N 0.000 description 1
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 1
- ORTVZLZNOYNASJ-UPHRSURJSA-N (z)-but-2-ene-1,4-diol Chemical compound OC\C=C/CO ORTVZLZNOYNASJ-UPHRSURJSA-N 0.000 description 1
- ZWVMLYRJXORSEP-UHFFFAOYSA-N 1,2,6-Hexanetriol Chemical compound OCCCCC(O)CO ZWVMLYRJXORSEP-UHFFFAOYSA-N 0.000 description 1
- YPFDHNVEDLHUCE-UHFFFAOYSA-N 1,3-propanediol Substances OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- WOOLAEUATDXVIQ-UHFFFAOYSA-N 1-[2-(methoxymethoxy)ethoxy]ethanol Chemical compound COCOCCOC(C)O WOOLAEUATDXVIQ-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 1
- BGJQNPIOBWKQAW-UHFFFAOYSA-N 1-tert-butylanthracene-9,10-dione Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2C(C)(C)C BGJQNPIOBWKQAW-UHFFFAOYSA-N 0.000 description 1
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 1
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 description 1
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- 229940093475 2-ethoxyethanol Drugs 0.000 description 1
- WONYMNWUJVKVII-UHFFFAOYSA-N 3,5-diiodothyropropionic acid Chemical compound IC1=CC(CCC(=O)O)=CC(I)=C1OC1=CC=C(O)C=C1 WONYMNWUJVKVII-UHFFFAOYSA-N 0.000 description 1
- SMDGQEQWSSYZKX-UHFFFAOYSA-N 3-(2,3-dicarboxyphenoxy)phthalic acid Chemical compound OC(=O)C1=CC=CC(OC=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O SMDGQEQWSSYZKX-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- ZBMISJGHVWNWTE-UHFFFAOYSA-N 3-(4-aminophenoxy)aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(N)=C1 ZBMISJGHVWNWTE-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- JVERADGGGBYHNP-UHFFFAOYSA-N 5-phenylbenzene-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(=O)O)=CC(C=2C=CC=CC=2)=C1C(O)=O JVERADGGGBYHNP-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- ALQSHHUCVQOPAS-UHFFFAOYSA-N Pentane-1,5-diol Chemical compound OCCCCCO ALQSHHUCVQOPAS-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N Tetraethylene glycol, Natural products OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- VYHBFRJRBHMIQZ-UHFFFAOYSA-N bis[4-(diethylamino)phenyl]methanone Chemical compound C1=CC(N(CC)CC)=CC=C1C(=O)C1=CC=C(N(CC)CC)C=C1 VYHBFRJRBHMIQZ-UHFFFAOYSA-N 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- OWBTYPJTUOEWEK-UHFFFAOYSA-N butane-2,3-diol Chemical compound CC(O)C(C)O OWBTYPJTUOEWEK-UHFFFAOYSA-N 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 238000007033 dehydrochlorination reaction Methods 0.000 description 1
- SOCTUWSJJQCPFX-UHFFFAOYSA-N dichromate(2-) Chemical compound [O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O SOCTUWSJJQCPFX-UHFFFAOYSA-N 0.000 description 1
- CMMUKUYEPRGBFB-UHFFFAOYSA-L dichromic acid Chemical compound O[Cr](=O)(=O)O[Cr](O)(=O)=O CMMUKUYEPRGBFB-UHFFFAOYSA-L 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- OWMBTIRJFMGPAC-UHFFFAOYSA-N dimethylamino 2-methylprop-2-enoate Chemical compound CN(C)OC(=O)C(C)=C OWMBTIRJFMGPAC-UHFFFAOYSA-N 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- MASNVFNHVJIXLL-UHFFFAOYSA-N ethenyl(ethoxy)silicon Chemical compound CCO[Si]C=C MASNVFNHVJIXLL-UHFFFAOYSA-N 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002440 hydroxy compounds Chemical class 0.000 description 1
- 238000006358 imidation reaction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920000166 polytrimethylene carbonate Polymers 0.000 description 1
- BYOIQYHAYWYSCZ-UHFFFAOYSA-N prop-2-enoxysilane Chemical compound [SiH3]OCC=C BYOIQYHAYWYSCZ-UHFFFAOYSA-N 0.000 description 1
- 235000013772 propylene glycol Nutrition 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Laminated Bodies (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Paints Or Removers (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、新規な感光性ポリ
イミド前駆体溶液、それから得られる耐熱性のポリイミ
ド塗膜及びその製造方法に関するものであり、前記感光
性ポリイミド前駆体は閉環して耐熱性ポリイミドを形成
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a novel photosensitive polyimide precursor solution, a heat-resistant polyimide coating film obtained therefrom, and a method for producing the same. It forms a polyimide.
【0002】[0002]
【従来の技術】ポリイミドは、エレクトロニクス分野へ
の応用に有用なものであり、半導体デバイス上への絶縁
フィルム材や保護コーティング材として用いられてい
る。特に全芳香族ポリイミドは、その優れた耐熱性、機
械的特性、電気的特性から、フレキシブル回路基板や集
積回路等において高密度化、多機能化等に大きく貢献し
ている。フレキシブル回路基板や集積回路等のように微
細な回路の層間絶縁膜や保護膜を形成させる場合、従
来、ポリイミド前駆体溶液が用いられてきた。このよう
なポリイミド前駆体溶液としては、下記一般式に示され
るポリアミド酸を溶質とするポリアミド酸溶液が知られ
ている。2. Description of the Related Art Polyimide is useful for application in the field of electronics, and is used as an insulating film material or a protective coating material on semiconductor devices. In particular, wholly aromatic polyimides have greatly contributed to higher densities, multifunctionality, and the like in flexible circuit boards and integrated circuits because of their excellent heat resistance, mechanical properties, and electrical properties. In the case of forming an interlayer insulating film or a protective film of a fine circuit such as a flexible circuit board or an integrated circuit, a polyimide precursor solution has been conventionally used. As such a polyimide precursor solution, a polyamic acid solution containing a polyamic acid represented by the following general formula as a solute is known.
【0003】[0003]
【化3】 Embedded image
【0004】前記のような用途では、通常、絶縁膜の上
下の導体層の導通あるいは、外部リードとの導通のた
め、絶縁膜に穴を開ける必要があった。つまり、ポリイ
ミドのごとき耐熱性の有機物質は均一な膜の状態で使用
されるのではなく、穴のあいたレリーフ構造体として用
いられていた。例えば、Epifano とJordan(ドイツ公開
公報1、764、977号)は可溶性ポリイミド前駆体
(ポリアミド酸)からなる層の上にポジ型レジストを形
成し、通常の化学的手法によってパターンを形成させた
後、レジストのなくなった部分のポリイミド前駆体を溶
出させ、レジスト部分を剥離し、熱処理を行って、ポリ
イミドのレリーフ・パターンを得ていた。また、Jones
(J.Plymer Sci.PartC,22、773 、1969)とAgnihotri
(Proc.SPEReginal Tech.Conf. 74,1976)はポリイミド
層の上にフォトレジスト・パターンを形成し、各々ヒド
ラジン、エチレンジアミンをエッチング液として用い、
ポリイミドのレリーフ・パターンを得ていた。In the above-mentioned applications, it is usually necessary to make a hole in the insulating film for conduction between the upper and lower conductor layers of the insulating film or conduction with external leads. That is, a heat-resistant organic substance such as polyimide has not been used in a uniform film state, but has been used as a relief structure having holes. For example, Epifano and Jordan (German Offenlegungsschrift 1, 764, 977) form a positive resist on a layer of a soluble polyimide precursor (polyamic acid) and then form a pattern by the usual chemical techniques. Then, the polyimide precursor in the portion where the resist disappeared was eluted, the resist portion was peeled off, and heat treatment was performed to obtain a polyimide relief pattern. Also, Jones
(J.Plymer Sci. Part C, 22, 773, 1969) and Agnihotri
(Proc.SPEReginal Tech.Conf. 74,1976) forms a photoresist pattern on a polyimide layer, using hydrazine and ethylenediamine as etchants, respectively.
A polyimide relief pattern was obtained.
【0005】レリーフ・パターンを間接的に作るこれら
の方法は、フォトレジスト膜の形成とその剥離という二
つの余分な工程を必要とするため、方法としては複雑に
なっていた。また、これらの方法においてはポリイミド
層あるいはポリイミド前駆体層は各々全体としてエッチ
ング液に対して同じ溶解性を有するもので、溶解部と残
存部の境界が不明確になり易かった。これらの問題は耐
熱性フォトレジストを用いて直接、耐熱性の有機物質か
らなるレリーフ・パターンを形成する方法で容易に解決
できるが、公知の一般のフォトレジストは耐熱性の面で
限界があった。[0005] These methods for indirectly forming a relief pattern have been complicated because they require two extra steps, namely, formation of a photoresist film and stripping thereof. In these methods, the polyimide layer or the polyimide precursor layer has the same solubility in the etching solution as a whole, and the boundary between the dissolved portion and the remaining portion is likely to be unclear. These problems can be easily solved by a method of forming a relief pattern made of a heat-resistant organic material directly using a heat-resistant photoresist, but known general photoresists have a limit in terms of heat resistance. .
【0006】耐熱性フォトレジストとして、KevwinとGo
ldrick(Polymer Eng.& Sci.11,426,1971) はポリイミ
ド前駆体と重クロム酸からなる系を見出している。この
系は感光性を有するので、通常の光化学的手法を用いて
直接的にレリーフ・パターンの作製に使用できる。ま
た、レリーフ・パターンを形成するポリイミド前駆体自
体がパターン露光により、可溶部と不溶部を生ずるた
め、溶解部と残存部の境界が明確になる。しかしなが
ら、この系は安定性が著しく悪く、ポリイミド前駆体と
重クロム酸塩の混合後直ちに使用する必要があり、工業
的な応用には大きな制約となっている。また、この系で
は、架橋された層中に無機イオンが存在するために、無
機イオンの存在が信頼性に悪影響を及ぼす半導体用途に
は不適であった。耐熱性フォトレジストの他の例とし
て、Kleeberg(USP 3,957,512 号, USP 4,040,831 号)
が開示した下記構造式As heat resistant photoresists, Kevwin and Go
ldrick (Polymer Eng. & Sci. 11, 426, 1971) has found a system consisting of a polyimide precursor and dichromic acid. Because of the photosensitivity of this system, it can be used directly to make relief patterns using conventional photochemical techniques. In addition, since the polyimide precursor itself forming the relief pattern generates a soluble portion and an insoluble portion by pattern exposure, the boundary between the dissolved portion and the remaining portion becomes clear. However, this system is extremely poor in stability and must be used immediately after mixing the polyimide precursor and the dichromate, which is a great limitation for industrial applications. Further, this system is not suitable for semiconductor applications in which the presence of inorganic ions adversely affects reliability because inorganic ions are present in the crosslinked layer. Another example of a heat resistant photoresist is Kleeberg (USP 3,957,512, USP 4,040,831)
The following structural formula disclosed by
【0007】[0007]
【化4】 Embedded image
【0008】に示すように感光性基をエステル基で導入
したポリイミド前駆体がある。このポリマーは、主とし
て、感光性基と二酸塩化物基を有する化合物とジアミン
とを反応させることによって得ている。ところが、この
系において問題とされるのは、ポリイミド前駆体溶液の
製造が複雑な点である。すなわち、感光性基と二酸塩化
物基を有する化合物の製造においては、まず二無水物と
感光性基を有するアルコールとから感光性基とカルボン
酸を有する化合物とし、その後酸塩化物としている。さ
らに、感光性基と二酸塩化物基を有する化合物とジアミ
ンとを反応させ前駆体溶液を得る。この系では、脱塩酸
によって生じた塩素イオンがそのままレジスト中に残
り、半導体用途では信頼性に悪影響を及ぼす可能性があ
りこの点でも好ましくない。As shown in the above, there is a polyimide precursor in which a photosensitive group is introduced by an ester group. This polymer is obtained mainly by reacting a compound having a photosensitive group and a diacid chloride group with a diamine. However, a problem in this system is that the production of the polyimide precursor solution is complicated. That is, in producing a compound having a photosensitive group and a diacid chloride group, a compound having a photosensitive group and a carboxylic acid is first formed from a dianhydride and an alcohol having a photosensitive group, and then an acid chloride is formed. Further, a compound having a photosensitive group and a diacid chloride group is reacted with a diamine to obtain a precursor solution. In this system, chlorine ions generated by dehydrochlorination remain in the resist as it is, which may adversely affect reliability in semiconductor applications, and is not preferable in this respect.
【0009】また、平本(特公昭59−52822号公
報、特公昭59−52823号公報)は、ポリイミド前
駆体(ポリアミド酸)溶液に感光性基を有するアミンを
加え感光性を付与する、もしくはポリイミド前駆体(ポ
リアミド酸)にアミド結合を介して感光性基を導入し感
光性を付与する技術を開示している。この技術によれ
ば、半導体用途において信頼性に悪影響のある無機塩や
無機イオンを含まない感光性ポリイミド前駆体溶液が得
られる。平本の系を含め、これら感光性ポリイミド前駆
体溶液はいずれも高重合度のポリマーの溶液である。こ
れらポリマー溶液からポリイミド塗膜を得る際は、一般
的には、このポリマー溶液を銅、ガラス等の基材上にコ
ーティングし、加熱することにより溶媒の除去及びイミ
ド化を行いポリイミド塗膜を得る。In addition, Hiramoto (JP-B-59-52822 and JP-B-59-52823) discloses that a polyimide precursor (polyamic acid) solution is added with an amine having a photosensitive group to impart photosensitivity. A technique for introducing a photosensitive group into a polyimide precursor (polyamic acid) via an amide bond to impart photosensitivity is disclosed. According to this technique, a photosensitive polyimide precursor solution containing no inorganic salt or inorganic ion that has an adverse effect on reliability in semiconductor applications can be obtained. Each of these photosensitive polyimide precursor solutions, including Hiramoto, is a solution of a polymer having a high degree of polymerization. When obtaining a polyimide coating from these polymer solutions, generally, this polymer solution is coated on a substrate such as copper, glass, etc., and the solvent is removed and imidation is performed by heating to obtain a polyimide coating. .
【0010】しかしながら、これらの高重合度のポリマ
ー溶液をコーティングする場合には、ポリマーの重合度
が高いと溶液の粘度を塗工可能にするためには、溶質濃
度を低くしなければならないという問題があり、反対に
生産性を高めるために、溶質濃度を高くすると溶液の粘
度が高くなり、塗工できなくなってしまうという問題が
あった。すなわち、これらの溶液は高い粘度を有するた
め、半導体用途に於いて多く用いられる塗工法であるス
ピンコート法に適用させるためには、溶質濃度を低くし
粘度を下げる必要がある。これにより、スピンコート法
による塗工は可能となるが、1回の塗工により得られる
膜厚は薄くなり、生産性は低いものであった。また、た
とえ塗工できたとしても、機械的、熱的特性に優れた塗
膜やフィルムが得られないという問題があった。さら
に、ポリマー溶液は長期の保存に耐え難く、その重合度
を維持しつつ長期間保存することは極めて困難であっ
た。However, when coating these polymer solutions having a high degree of polymerization, if the degree of polymerization of the polymer is high, the concentration of the solute must be lowered in order to make the viscosity of the solution coatable. On the contrary, if the concentration of the solute is increased in order to increase the productivity, there is a problem that the viscosity of the solution becomes high and coating becomes impossible. That is, since these solutions have a high viscosity, it is necessary to lower the solute concentration and lower the viscosity in order to apply the solution to the spin coating method, which is a coating method often used in semiconductor applications. As a result, coating by the spin coating method was possible, but the film thickness obtained by one coating was thin, and the productivity was low. Further, even if the coating can be performed, there is a problem that a coating film or a film having excellent mechanical and thermal properties cannot be obtained. Further, the polymer solution is hard to withstand long-term storage, and it has been extremely difficult to store the polymer solution for a long time while maintaining its degree of polymerization.
【0011】[0011]
【本発明が解決しようとする課題】上記状況に鑑み、本
発明の課題は、製造が平易で、無機塩もしくは無機イオ
ンを含まず、高濃度かつ低粘度である感光性ポリイミド
前駆体溶液、それから得られる耐熱性のポリイミド塗膜
及びその製造方法を提供することにある。SUMMARY OF THE INVENTION In view of the above situation, an object of the present invention is to provide a photosensitive polyimide precursor solution which is easy to manufacture, contains no inorganic salts or inorganic ions, has a high concentration and a low viscosity, and An object of the present invention is to provide a heat-resistant polyimide coating film obtained and a method for producing the same.
【0012】[0012]
【課題を解決するための手段】本発明者らは上記課題を
解決すべく鋭意研究した結果、先に、特定のモノマーを
組み合わせれば、重合体でなくともそれらモノマーを含
む溶液から、良好な物性を有するポリイミド塗膜が得ら
れることを見い出した。すなわち、アミノ基を有する特
定の化合物とカルボキシル基を有する特定の化合物とか
ら得られる塩を溶質として含有しているポリイミド前駆
体溶液は、モノマーの塩を高濃度で含有しているにもか
かわらず、低粘度を示し、しかも、この溶液からは高強
度のポリイミド塗膜又はフィルムが得られるという知見
を得、これらの知見に基づいて、ポリイミド前駆体とし
てポリマーを用いず、高濃度でありかつ低粘度を有する
ポリイミド前駆体溶液に関する技術を開発した(特願平
9−165557号公報)。さらに、前記カルボキシル
基を有する化合物に代えて後述する一般式(2)に示す
感光性基を有する化合物を用いると感光性ポリイミド前
駆体溶液が得られるという知見を得、この知見に基づい
て、本発明に到達した。Means for Solving the Problems The inventors of the present invention have conducted intensive studies to solve the above-mentioned problems. As a result, if a specific monomer is first combined, it is possible to obtain a good solution from a solution containing the monomer even if it is not a polymer. It has been found that a polyimide coating film having physical properties can be obtained. That is, a polyimide precursor solution containing a salt obtained from a specific compound having an amino group and a specific compound having a carboxyl group as a solute, despite containing a high concentration of a salt of a monomer. It has been found that a low-viscosity, high-strength polyimide coating film or film can be obtained from this solution.Based on these findings, no polymer was used as a polyimide precursor, and a high concentration and low concentration were obtained. A technique relating to a polyimide precursor solution having a viscosity was developed (Japanese Patent Application No. 9-165557). Further, it has been found that a photosensitive polyimide precursor solution can be obtained by using a compound having a photosensitive group represented by the following general formula (2) instead of the compound having a carboxyl group. The invention has been reached.
【0013】すなわち、本発明の要旨は、第1に、一般
式(1)に示すアミノ基を有する化合物と一般式(2)
に示す化合物との塩と、増感剤もしくは光開始剤とを溶
質として溶媒中に溶解していることを特徴とする感光性
ポリイミド前駆体溶液。That is, the gist of the present invention is that first, a compound having an amino group represented by the general formula (1) and a compound represented by the general formula (2)
A photosensitive polyimide precursor solution, comprising a salt of the compound shown in (1) and a sensitizer or a photoinitiator dissolved as a solute in a solvent.
【0014】[0014]
【化5】 Embedded image
【0015】〔一般式(1)中、Rは少なくとも1つの
炭素6員環を持つ2価の芳香族残基を示す。一般式
(2)中、R' は、少なくとも1つの炭素6員環を含む
4価の芳香族残基を示し、4つのカルボニル基はこの残
基中異なった炭素原子に直接連結しており、4つのうち
の2つずつは対をなし、炭素6員環内の隣接する炭素原
子に結合しており、R''は化学線によって二量化又は重
合可能な炭素−炭素二重結合を含む感光性基を有する基
であり、R''' は水酸基及び−O- R* (R* は化学線
によって二量化又は重合可能な炭素−炭素二重結合を含
むアンモニウムイオン)で示される感光性を有する基か
ら任意に選ばれる。〕[In the general formula (1), R represents a divalent aromatic residue having at least one carbon 6-membered ring. In the general formula (2), R ′ represents a tetravalent aromatic residue containing at least one carbon 6-membered ring, and four carbonyl groups are directly linked to different carbon atoms in the residue; Two of the four are paired and are attached to adjacent carbon atoms in the six-membered carbon ring and R ″ is a photosensitive moiety containing a carbon-carbon double bond that can be dimerized or polymerized by actinic radiation. R ′ ″ is a hydroxyl group and —O — R * (R * is an ammonium ion containing a carbon-carbon double bond that can be dimerized or polymerized by actinic radiation). It is arbitrarily selected from the groups having. ]
【0016】第2に、前記感光性ポリイミド前駆体溶液
から得られるポリイミド塗膜である。第3に、前記感光
性ポリイミド前駆体溶液を基材上に塗工し、加熱してイ
ミド化することを特徴とするポリイミド塗膜の製造方法
である。第4に、前記感光性ポリイミド前駆体溶液を基
材上に塗工し、露光、現像し、加熱イミド化することを
特徴とするレリーフパターンの形成されたポリイミド塗
膜の製造方法である。Second, there is a polyimide coating film obtained from the photosensitive polyimide precursor solution. Thirdly, there is provided a method for producing a polyimide coating film, which comprises applying the photosensitive polyimide precursor solution on a substrate and heating the solution to imidize the substrate. Fourthly, there is provided a method for producing a polyimide coating film on which a relief pattern is formed, which comprises applying the photosensitive polyimide precursor solution onto a substrate, exposing, developing, and heat-imidizing.
【0017】[0017]
【発明の実施の形態】以下本発明について詳細に説明す
る。まず、本発明で用いる用語について説明する。 (1)塩 アミノ基を有する化合物とカルボキシル基を有する化合
物又はその誘導体とを溶媒中で混合して得られる複合体
をいい、複合体はいかなる状態の結合(イオン結合もし
くは非イオン結合)をしていてもよい。 (2)ポリイミド ポリマー鎖の繰り返し単位の80モル%以上がイミド構
造を有する有機ポリマーをいう。そして、一般にこの有
機ポリマーは400℃以下では融点もしくは軟化点を持
たない。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail. First, terms used in the present invention will be described. (1) Salt A complex obtained by mixing a compound having an amino group and a compound having a carboxyl group or a derivative thereof in a solvent, and the complex can bind in any state (ionic bond or nonionic bond). May be. (2) Polyimide 80% by mole or more of the repeating unit of the polymer chain has an imide structure. Generally, this organic polymer has no melting point or softening point at 400 ° C. or lower.
【0018】(3)ポリイミド前駆体 加熱、又は、化学的作用により閉環してポリイミドとな
る有機化合物をいう。ここで、閉環とはイミド環が形成
されることをいう。 (4)ポリイミド前駆体溶液 ポリイミド前駆体が溶媒に溶解しているものである。こ
こで溶媒とは、25℃で液状の化合物をいう。 (5)粘度 (株)トキメック社製、DVL−BII型デジタル粘度計
(B型粘度計)を用い、20℃における回転粘度を測定
したものである。 (6)溶質濃度 溶液中に占めるポリイミド前駆体の重量割合を百分率で
表した数値である。(3) Polyimide Precursor An organic compound which becomes a polyimide by ring closure by heating or chemical action. Here, ring closure means that an imide ring is formed. (4) Polyimide precursor solution The polyimide precursor is dissolved in a solvent. Here, the solvent refers to a compound which is liquid at 25 ° C. (5) Viscosity The rotational viscosity at 20 ° C. was measured using a DVL-BII type digital viscometer (B type viscometer) manufactured by Tokimec Co., Ltd. (6) Solute concentration It is a numerical value expressing the weight ratio of the polyimide precursor in the solution in percentage.
【0019】(7)ポリイミド塗膜 例えば銅、アルミニウム、ガラス等の基材上に形成され
たポリイミドの膜をいい、これらポリイミド塗膜の中
で、基材と密着したまま使用されるものをポリイミド被
覆物といい、基材から剥離して使用されるものをポリイ
ミドフィルムという。(7) Polyimide coating film A polyimide film formed on a base material such as copper, aluminum, glass, etc. What is called a coating and what is used after being peeled off from the substrate is called a polyimide film.
【0020】さらに本発明について説明する。本発明の
感光性ポリイミド前駆体溶液は、一般式(1)に示すア
ミノ基を有する化合物と一般式(2)に示す化合物との
塩と、増感剤もしくは光開始剤とを溶質として溶媒中に
溶解しているものである。一般式(1)に示すアミノ基
を有する化合物において、Rは少なくとも1つの炭素6
員環を持つ2価の芳香族残基を示し、Rの具体例として
次のものが挙げられる。Further, the present invention will be described. The photosensitive polyimide precursor solution of the present invention comprises a salt of a compound having an amino group represented by the general formula (1) and a compound represented by the general formula (2), and a sensitizer or a photoinitiator as a solute in a solvent. Are dissolved in In the compound having an amino group represented by the general formula (1), R represents at least one carbon 6
It represents a divalent aromatic residue having a membered ring, and specific examples of R include the following.
【0021】[0021]
【化6】 Embedded image
【0022】[0022]
【化7】 Embedded image
【0023】特に、Rとしては次のものが好ましい。Particularly, R is preferably the following.
【0024】[0024]
【化8】 Embedded image
【0025】一般式(2)に示す化合物において、R'
は、少なくとも1つの炭素6員環を含む4価の芳香族残
基を示し、4つのカルボニル基はこの残基中異なった炭
素原子に直接連結しており、4つのうちの2つずつは対
をなし、炭素6員環内の隣接する炭素原子に結合してお
り、R''は化学線によって二量化又は重合可能な炭素−
炭素二重結合を含む感光性基であり、R''' は水酸基及
び−O- R* (R* は化学線によって二量化又は重合可
能な炭素−炭素二重結合を含むアンモニウムイオン)で
示される感光性を有する基から任意に選ばれる。一般式
(2)に示す化合物において、R' の具体例として次の
ものが挙げられる。In the compound represented by the general formula (2), R ′
Represents a tetravalent aromatic residue containing at least one 6-membered carbon ring, four carbonyl groups are directly linked to different carbon atoms in the residue, and two of the four are paired. Wherein R ″ is a carbon-dimerizable or polymerizable by actinic radiation.
A photosensitive group containing a carbon double bond, wherein R ″ ′ is a hydroxyl group and —O — R * (R * is an ammonium ion containing a carbon-carbon double bond that can be dimerized or polymerized by actinic radiation) Arbitrarily selected from the groups having photosensitivity. In the compound represented by the general formula (2), specific examples of R ′ include the following.
【0026】[0026]
【化9】 Embedded image
【0027】特に、R' としては次のものが好ましい。Particularly, R 'is preferably as follows.
【0028】[0028]
【化10】 Embedded image
【0029】R''の具体例としては次のようなものが挙
げられ、Specific examples of R ″ include the following:
【0030】[0030]
【化11】 Embedded image
【0031】特にR''としては次のものが好ましい。The following are particularly preferred as R ″.
【0032】[0032]
【化12】 Embedded image
【0033】R''' の具体例としては次のようなものが
挙げられ、Specific examples of R '''include the following:
【0034】[0034]
【化13】 Embedded image
【0035】特にR''' としては次のものが好ましい。The following are particularly preferred as R ′ ″.
【0036】[0036]
【化14】 Embedded image
【0037】増感剤もしくは光開始剤としては、J.Kosa
r 「Light Sensitive Systems 」(John Wiley & Son
s 、Inc. New York 1965)のp143〜p146、p160〜p188に
記載されるものから適宜選択される。好ましい例として
は、ミヒラーケトン、ベンゾインエーテル、2−ter
t−ブチル−9,10−アントラキノン、4,4’−ビ
ス(ジエチルアミノ)ベンゾフェノンが挙げられる。As a sensitizer or a photoinitiator, J. Kosa
r "Light Sensitive Systems" (John Wiley & Son
s, Inc. New York 1965), p143-p146 and p160-p188. Preferred examples include Michler's ketone, benzoin ether, 2-ter
t-butyl-9,10-anthraquinone and 4,4′-bis (diethylamino) benzophenone.
【0038】本発明のポリイミド前駆体溶液は、−30
〜60℃の溶媒中に一般式(2)におけるR’を骨格と
するテトラカルボン酸とR''基を有するヒドロキシ化合
物とのジエステル、一般式(1)におけるRを骨格とす
るアミノ基を有する化合物、及び増感剤もしくは光開始
剤を溶解して、あるいは、さらに一般式(2)における
R* 基の元となるアミン化合物を溶解して得られる。そ
して、一般式(1)に示すアミノ基を有する化合物と一
般式(2)に示す化合物との塩と、増感剤もしくは光開
始剤とが溶質として溶媒中に溶解している。溶媒として
は一般式(1)に示すアミノ基を有する化合物、一般式
(2)に示す化合物との塩と、増感剤もしくは光開始剤
とを溶かす溶媒であればいかなる溶媒も用いることがで
きる。The polyimide precursor solution of the present invention has -30
A diester of a tetracarboxylic acid having a skeleton of R ′ in the general formula (2) and a hydroxy compound having an R ″ group in a solvent at 6060 ° C., having an amino group having a skeleton of R in the general formula (1) It can be obtained by dissolving a compound and a sensitizer or a photoinitiator, or by further dissolving an amine compound which is a source of an R * group in the general formula (2). Then, a salt of the compound having an amino group represented by the general formula (1) and the compound represented by the general formula (2), and a sensitizer or a photoinitiator are dissolved in a solvent as solutes. As the solvent, any solvent can be used as long as it dissolves a compound having an amino group represented by the general formula (1), a salt of the compound represented by the general formula (2), and a sensitizer or a photoinitiator. .
【0039】溶媒としては例えば、非プロトン性極性溶
媒、エーテル系化合物、水溶性アルコール系化合物等が
挙げられる。非プロトン性極性溶媒としては、N−メチ
ルピロリドン、N,N−ジメチルホルムアミド、N,N
−ジメチルアセトアミド、ジメチルスルホキシド、ヘキ
サメチルフォスフォラアミド等が挙げられ、エーテル系
化合物としては、2−メトキシエタノール、2−エトキ
シエタノール、2−(メトキシメトキシ)エトキシエタ
ノール、2−イソプロポキシエタノール、2−ブトキシ
エタノール、テトラヒドロフルフリルアルコール、ジエ
チレングリコール、ジエチレングリコールモノメチルエ
ーテル、ジエチレングリコールモノエチルエーテル、ジ
エチレングリコールモノブチルエーテル、トリエチレン
グリコール、トリエチレングリコールモノエチルエーテ
ル、テトラエチレングリコール、1−メトキシ−2−プ
ロパノール、1−エトキシ−2−プロパノール、ジプロ
ピレングリコール、ジプロピレングリコールモノメチル
エーテル、ジプロピレングリコールモノエチルエーテ
ル、トリプロピレングリコールモノメチルエーテル、ポ
リエチレングリコール、ポリプロピレングリコール、テ
トラヒドロフラン、ジオキサン、1,2−ジメトキシエ
タン、ジエチレングリコールジメチルエーテル、ジエチ
レングリコールジエチルエーテル等が挙げられる。Examples of the solvent include aprotic polar solvents, ether compounds and water-soluble alcohol compounds. Examples of aprotic polar solvents include N-methylpyrrolidone, N, N-dimethylformamide, N, N
-Dimethylacetamide, dimethylsulfoxide, hexamethylphosphoramide, and the like, and examples of the ether compound include 2-methoxyethanol, 2-ethoxyethanol, 2- (methoxymethoxy) ethoxyethanol, 2-isopropoxyethanol, and 2-isopropoxyethanol. Butoxyethanol, tetrahydrofurfuryl alcohol, diethylene glycol, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, triethylene glycol, triethylene glycol monoethyl ether, tetraethylene glycol, 1-methoxy-2-propanol, 1-ethoxy- 2-propanol, dipropylene glycol, dipropylene glycol monomethyl ether, dipro Glycol monoethyl ether, tripropylene glycol monomethyl ether, polyethylene glycol, polypropylene glycol, tetrahydrofuran, dioxane, 1,2-dimethoxyethane, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, and the like.
【0040】水溶性アルコール系化合物としては、メタ
ノール、エタノール、1−プロパノール、2−プロパノ
ール、tert−ブチルアルコール、エチレングリコー
ル、1,2−プロパンジオール、1,3−プロパンジオ
ール、1,3−ブタンジオール、1,4−ブタンジオー
ル、2,3−ブタンジオール、1,5−ペンタンジオー
ル、2−ブテン−1,4−ジオール、2−メチル−2,
4−ペンタンジオール、1,2,6−ヘキサントリオー
ル、ジアセトンアルコール等が挙げられ、上記各化合物
を単独、もしくは二種以上を混合して用いることができ
る。これらの溶媒のうち特に好ましい例として、単独溶
媒としては、N、N−ジメチルホルムアミド、N,N−
ジメチルアセトアミド、2−メトキシエタノール、ジエ
チレングリコールモノメチルエーテル、1−メトキシ−
2−プロパノール等が挙げられ、混合溶媒としては、N
−メチルピロリドンとジエチレングリコールモノメチル
エーテル、N−メチルピロリドンとメタノール、N−メ
チルピロリドンと2−メトキシエタノールを組み合わせ
たもの等が挙げられる。Examples of the water-soluble alcohol compound include methanol, ethanol, 1-propanol, 2-propanol, tert-butyl alcohol, ethylene glycol, 1,2-propanediol, 1,3-propanediol, and 1,3-butane. Diol, 1,4-butanediol, 2,3-butanediol, 1,5-pentanediol, 2-butene-1,4-diol, 2-methyl-2,
Examples thereof include 4-pentanediol, 1,2,6-hexanetriol, and diacetone alcohol. The above compounds can be used alone or in combination of two or more. Particularly preferred examples of these solvents include N, N-dimethylformamide, N, N-
Dimethylacetamide, 2-methoxyethanol, diethylene glycol monomethyl ether, 1-methoxy-
2-propanol and the like, and the mixed solvent is N 2
-Methylpyrrolidone and diethylene glycol monomethyl ether; N-methylpyrrolidone and methanol; and N-methylpyrrolidone and 2-methoxyethanol in combination.
【0041】またさらに溶媒としてアミン化合物を用い
ることができ、アミン化合物単独、又は前述した種々の
溶媒とアミン化合物との混合物を用いることもできる。
この場合アミン化合物としてはいかなるものを用いても
よいが、第3級アミンを用いることが好ましい。この中
で、トリエチルアミン、ジメチルアミノエタノールを用
いるのが特に好ましい。Further, an amine compound can be used as a solvent, and an amine compound alone or a mixture of the above-described various solvents and an amine compound can also be used.
In this case, any amine compound may be used, but a tertiary amine is preferably used. Among these, it is particularly preferable to use triethylamine and dimethylaminoethanol.
【0042】本発明におけるポリイミド前駆体溶液のポ
リイミド前駆体の固形文濃度は、30重量%以上が好ま
しい。35重量%以上がより好ましく、40重量%以上
がさらに好ましい。30重量%未満では、塗工の際の生
産性を高める効果が薄くなることがある。また、ポリイ
ミド前駆体溶液の粘度は、100ポイズ以下が好まし
く、85ポイズ以下がより好ましく、60ポイズ以下が
さらに好ましい。100ポイズを超えると塗工が困難に
なることがある。The solid concentration of the polyimide precursor in the polyimide precursor solution in the present invention is preferably 30% by weight or more. It is more preferably at least 35% by weight, even more preferably at least 40% by weight. If the amount is less than 30% by weight, the effect of increasing the productivity during coating may be reduced. The viscosity of the polyimide precursor solution is preferably 100 poise or less, more preferably 85 poise or less, and even more preferably 60 poise or less. If it exceeds 100 poise, coating may become difficult.
【0043】本発明の感光性ポリイミド前駆体溶液にお
いて、一般式(2)に示す化合物の一部を、一般式
(3)に示すカルボキシル基を有する化合物、又は一般
式(4)に示すジカルボン酸無水物に置き換えてもよ
い。この場合、一般式(2)に示す化合物に対する一般
式(3)に示すカルボキシル基を有する化合物又は一般
式(4)に示すジカルボン酸無水物のモル比を制御する
ことによって、得られるポリイミドの溶融流動性を制御
することが可能となる。このとき、一般式(2)に示す
化合物と、一般式(3)に示すカルボキシル基を有する
化合物又は一般式(4)に示すジカルボン酸無水物のモ
ル比は100:0〜100:20が好ましく、100:
0〜100:11がさらに好ましい。一般式(2)に示
す化合物100に対する一般式(3)に示すカルボキシ
ル基を有する化合物又は一般式(4)に示すジカルボン
酸無水物のモル比が20を超えると強度の低いポリイミ
ドフィルムしか得られないことがある。In the photosensitive polyimide precursor solution of the present invention, a part of the compound represented by the general formula (2) is replaced with a compound having a carboxyl group represented by the general formula (3) or a dicarboxylic acid represented by the general formula (4). It may be replaced with an anhydride. In this case, the polyimide obtained by controlling the molar ratio of the compound having a carboxyl group represented by the general formula (3) or the dicarboxylic anhydride represented by the general formula (4) to the compound represented by the general formula (2) Fluidity can be controlled. At this time, the molar ratio of the compound represented by the general formula (2) to the compound having a carboxyl group represented by the general formula (3) or the dicarboxylic anhydride represented by the general formula (4) is preferably 100: 0 to 100: 20. , 100:
0-100: 11 is more preferred. When the molar ratio of the compound having a carboxyl group represented by the general formula (3) or the dicarboxylic anhydride represented by the general formula (4) to the compound 100 represented by the general formula (2) exceeds 20, only a polyimide film having low strength can be obtained. There may not be.
【0044】[0044]
【化15】 Embedded image
【0045】さらに、一般式(2)に示す化合物の一部
を一般式(5)に示すテトラカルボン酸二無水物に置き
換えてもよい。このとき、一般式(2)に示す化合物1
00に対する一般式(5)に示すテトラカルボン酸二無
水物のモル比は0〜30が好ましい。この比を調節する
ことによってポリイミド前駆体溶液の粘度を微調整する
ことができる。一般式(2)に化合物100に対する一
般式(5)に示すテトラカルボン酸二無水物のモル比が
100を超えると本発明の特徴である低粘度なポリイミ
ド前駆体溶液を得ることができないことがある。Further, a part of the compound represented by the general formula (2) may be replaced with a tetracarboxylic dianhydride represented by the general formula (5). At this time, the compound 1 represented by the general formula (2)
The molar ratio of the tetracarboxylic dianhydride represented by the general formula (5) to 00 is preferably from 0 to 30. By adjusting this ratio, the viscosity of the polyimide precursor solution can be finely adjusted. When the molar ratio of the tetracarboxylic dianhydride shown in the general formula (5) to the compound 100 in the general formula (2) exceeds 100, a low-viscosity polyimide precursor solution which is a feature of the present invention cannot be obtained. is there.
【0046】[0046]
【化16】 Embedded image
【0047】またさらに、一般式(1)に示すジアミン
の一部を、一般式(6)に示すアミンに置き換えても、
得られるポリイミドの溶融流動性を制御することができ
る。この場合、一般式(1)に示すジアミンと、一般式
(6)に示すアミンの比は100:0〜100:20が
好ましく、100:0〜100:11がさらに好まし
い。一般式(1)に示すジアミン100に対する一般式
(6)に示すアミンのモル比が20を超えると強度の高
いポリイミドフィルムが得られないとがある。Further, when a part of the diamine represented by the general formula (1) is replaced with the amine represented by the general formula (6),
The melt fluidity of the obtained polyimide can be controlled. In this case, the ratio of the diamine represented by the general formula (1) to the amine represented by the general formula (6) is preferably 100: 0 to 100: 20, and more preferably 100: 0 to 100: 11. If the molar ratio of the amine represented by the general formula (6) to the diamine 100 represented by the general formula (1) exceeds 20, a high-strength polyimide film may not be obtained.
【0048】[0048]
【化17】 Embedded image
【0049】さらに、本発明のポリイミド前駆体溶液に
は、必要に応じて例えば、ビニルエトキシシラン、ビニ
ルメトキシシラン、γ−メタクリルオキシプロピルトリ
メトキシシラン、γ−グリシドキシプロピルトリメトキ
シシラン、γ−アミノプロピルトリメトキシシラン、γ
−アミノプロピルトリエトキシシラン、ヘキサメチルジ
シラザン等の有機シラン化合物を接着助剤として添加し
たり、顔料、充填剤、摩滅剤、誘電体、潤滑剤等の他公
知の添加物を本発明の効果を損なわない範囲で添加する
ことができる。また、他の重合体や例えば水不溶性のエ
ーテル類、アルコール類、ケトン類、エステル、ハロゲ
ン化炭化水素類、炭化水素類等の溶媒を本発明の効果を
損なわない範囲で添加することができる。Further, the polyimide precursor solution of the present invention may contain, if necessary, for example, vinylethoxysilane, vinylmethoxysilane, γ-methacryloxypropyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ- Aminopropyltrimethoxysilane, γ
-Addition of an organic silane compound such as aminopropyltriethoxysilane, hexamethyldisilazane or the like as an adhesion aid, or other known additives such as pigments, fillers, abrasives, dielectrics, lubricants, etc. Can be added in a range that does not impair. In addition, other polymers and solvents such as water-insoluble ethers, alcohols, ketones, esters, halogenated hydrocarbons, hydrocarbons and the like can be added within a range not to impair the effects of the present invention.
【0050】ポリイミド塗膜は感光性ポリイミド前駆体
溶液を後述する方法で基材上に塗工し、加熱してイミド
化することによって得られる。さらにレリーフパターン
の形成されたポリイミド塗膜は、通常用いられているフ
ォトレジスト技術により、製造される。すなわち、前記
のようにして得られた感光性ポリイミド前駆体溶液を、
従来公知のスピンコート法、スプレイコート法等や、ス
リット状ノズルから押し出したり、バーコーター等によ
り基材上に塗工して溶媒を除去し、得られた塗工膜上に
ネガマスクを置き、化学線を照射して露光する。化学線
としては、X線、電子線、紫外線、可視光線などが例と
してあげられるが、好ましくは紫外線である。ついで、
未露光部を現像液で溶解除去することによりレリーフ構
造を得る。現像液は、ポリイミド構造に合わせて適宜選
択する必要がある。現像液としては通常、ジメチルスル
ホキシド、ジメチルホルムアミド、ジメチルアセトアミ
ド、N−メチルピロリドン、ヘキサメチルフォスホラミ
ドなどの非プロトン性極性溶媒とメタノール、エタノー
ル、イソプロパノールなどのアルコールとの混合溶媒が
用いられる。現像後、得られたパターンを加熱によりイ
ミド化するとパターン形成されたポリイミド塗膜が得ら
れる。なお、パターン形成されたポリイミド塗膜も含め
たポリイミド塗膜において、基材と密着したまま使用さ
れるものをポリイミド被覆物といい、基材から剥離して
用いるものをポリイミドフィルムという。The polyimide coating film can be obtained by applying a photosensitive polyimide precursor solution on a substrate by a method described later and heating it to imidize it. Further, the polyimide coating film on which the relief pattern is formed is manufactured by a commonly used photoresist technique. That is, the photosensitive polyimide precursor solution obtained as described above,
Conventionally known spin coating method, spray coating method or the like, extrusion from a slit-shaped nozzle, coating on a substrate with a bar coater or the like to remove the solvent, placing a negative mask on the obtained coating film, chemical Expose by irradiating a line. Examples of the actinic radiation include X-rays, electron beams, ultraviolet rays, visible rays, and the like, and are preferably ultraviolet rays. Then
A relief structure is obtained by dissolving and removing the unexposed portion with a developer. The developer needs to be appropriately selected according to the polyimide structure. As the developer, a mixed solvent of an aprotic polar solvent such as dimethyl sulfoxide, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, and hexamethylphosphoramide and an alcohol such as methanol, ethanol, and isopropanol is generally used. After development, the resulting pattern is imidized by heating to obtain a patterned polyimide coating film. In the polyimide coating film including the patterned polyimide coating film, one that is used while being in close contact with the substrate is called a polyimide coating, and one that is peeled off from the substrate and used is called a polyimide film.
【0051】このときのイミド化条件は200〜400
℃が好ましく、250〜350℃がより好ましい。20
0〜400℃の範囲外ではイミド化が不十分であった
り、熱により塗膜の変形、劣化をきたすことがある。The imidization conditions at this time are 200 to 400.
C. is preferable, and 250 to 350 C. is more preferable. 20
If the temperature is outside the range of 0 to 400 ° C., imidization may be insufficient, or the coating may be deformed or deteriorated by heat.
【0052】本発明の感光性ポリイミド前駆体溶液を用
いることにより、優れた耐熱性、耐薬品性、絶縁特性、
機械特性を有し、かつ解像度の高いパターンを得ること
ができる。また、このポリイミドパターンは、半導体に
悪影響を及ぼす無機塩もしくは無機イオンを含まない。
さらに、本発明の感光性ポリイミド前駆体溶液は従来の
感光性ポリイミド前駆体溶液に比べ、製造が平易で、高
濃度であり、保存安定性が良く、ひいては生産性の向上
に大きく寄与するものである。By using the photosensitive polyimide precursor solution of the present invention, excellent heat resistance, chemical resistance, insulation properties,
A pattern having mechanical characteristics and high resolution can be obtained. Further, the polyimide pattern does not include an inorganic salt or an inorganic ion that adversely affects the semiconductor.
Furthermore, the photosensitive polyimide precursor solution of the present invention is easier to produce, has a higher concentration, has better storage stability, and thus greatly contributes to an improvement in productivity, as compared with the conventional photosensitive polyimide precursor solution. is there.
【0053】本発明の感光性ポリイミド前駆体溶液、そ
れから得られるポリイミド塗膜は次のようなものに用い
られる。例えば、半導体のパッシベーション膜、集積回
路の多層配線における絶縁膜、集積回路のイオン注入保
護膜、半田付け時の半田ダム、集積回路のアイソレーシ
ョン用溝を埋める樹脂、集積回路のファインパターン形
成時に用いられるリフトオフ法用のリフトオフ材及びプ
リント回路の半田付け保護膜の形成などに利用される。
さらに、耐熱性のフォトレジストとして金属付着やドラ
イエッチングプロセスへの応用も可能である。さらに、
耐薬品性などの特徴を利用した、一般のフォトレジスト
用途にも適用が可能である。The photosensitive polyimide precursor solution of the present invention and the polyimide coating film obtained therefrom are used for the following. For example, a passivation film of a semiconductor, an insulating film in a multilayer wiring of an integrated circuit, an ion implantation protection film of an integrated circuit, a solder dam at the time of soldering, a resin for filling an isolation groove of an integrated circuit, and a fine pattern of an integrated circuit are used. It is used for forming a lift-off material for a lift-off method and a soldering protective film for a printed circuit.
Further, it can be applied to a metal deposition or a dry etching process as a heat resistant photoresist. further,
It can also be applied to general photoresist applications utilizing features such as chemical resistance.
【0054】[0054]
【実施例】以下本発明を実施例により具体的に説明する
が、本発明はこれらの実施例により限定されるものでは
ない。なお、実施例においてODP−HEMAは、オキ
シジフタル酸とヒドロキシエチルメタクリレートとのジ
エステルをいい、BPA−HEMAはビフェニルテトラ
カルボン酸とヒドロキシエチルメタクリレートとのジエ
ステルをいい、これらは、特開平6−305929号公
報とM.Farahaniら(J.Dent.Res. 67 、January、1991)
とに開示された方法と同様にして合成し、NMRにより
生成の確認を行った。EXAMPLES Hereinafter, the present invention will be described specifically with reference to Examples, but the present invention is not limited to these Examples. In Examples, ODP-HEMA refers to a diester of oxydiphthalic acid and hydroxyethyl methacrylate, and BPA-HEMA refers to a diester of biphenyltetracarboxylic acid and hydroxyethyl methacrylate, which are disclosed in JP-A-6-305929. And M. Farahani et al. (J. Dent. Res. 67, January, 1991)
And the production was confirmed by NMR.
【0055】実施例1 ODP−HEMA14.3g(25.07mmol)を
ジメチルホルムアミド45.0gに溶解し、これに3,
4’−オキシジアニリン5.02g(25.07mmo
l)を加えた。1時間攪拌した後、ミヒラーケトン0.
632g(2.36mmol)を加え、さらに3時間攪
拌したところ、粘度0.054ポイズの青みがかった黄
色透明な溶液が得られた。(ポリイミド前駆体換算固形
分30重量%) 得られた溶液をスピンコート法によりガラス板上に10
μmの膜厚に塗工した。塗膜の上にスリット上のマスク
を置き、500mWの高圧水銀灯により10分間露光し
た。露光後、ジメチルアセトアミド(1mol)とイソ
プロパノール(2mol)の混合溶媒で現像し、レリー
フパターンを得た。これを、300℃、30分間加熱処
理してポリイミドパターンを得た。Example 1 ODP-HEMA (14.3 g, 25.07 mmol) was dissolved in dimethylformamide (45.0 g).
5.02 g of 4'-oxydianiline (25.07 mmol
l) was added. After stirring for one hour, Michler's ketone 0.1.
632 g (2.36 mmol) was added and the mixture was further stirred for 3 hours to obtain a bluish-yellow transparent solution having a viscosity of 0.054 poise. (Polyimide precursor-equivalent solid content of 30% by weight) The obtained solution was spin-coated on a glass plate by 10%.
It was applied to a thickness of μm. A mask on a slit was placed on the coating film, and the film was exposed to a high-pressure mercury lamp of 500 mW for 10 minutes. After exposure, development was performed with a mixed solvent of dimethylacetamide (1 mol) and isopropanol (2 mol) to obtain a relief pattern. This was heated at 300 ° C. for 30 minutes to obtain a polyimide pattern.
【0056】実施例2 ODP−HEMA14.3g(25.07mmol)を
ジメチルホルムアミド39.3gに溶解し、これに3,
4’−オキシジアニリン5.02g(25.07mmo
l)を加えた。1時間攪拌した後、ジメチルアミノメタ
クリレート5.7g(36.23g)とミヒラーケトン
0.68g(2.53mmol)を加え、さらに3時間
攪拌したところ、粘度0.08ポイズの青みがかった黄
色透明な溶液が得られた。(ポリイミド前駆体換算固形
分50重量%) 得られた溶液を実施例1と同様に塗工、露光、現像を行
い、ポリイミドパターンを得た。Example 2 14.3 g (25.07 mmol) of ODP-HEMA was dissolved in 39.3 g of dimethylformamide.
5.02 g of 4'-oxydianiline (25.07 mmol
l) was added. After stirring for 1 hour, 5.7 g (36.23 g) of dimethylamino methacrylate and 0.68 g (2.53 mmol) of Michler's ketone were added, and the mixture was further stirred for 3 hours to obtain a bluish-yellow transparent solution having a viscosity of 0.08 poise. Obtained. (Solid content in terms of polyimide precursor: 50% by weight) The obtained solution was applied, exposed and developed in the same manner as in Example 1 to obtain a polyimide pattern.
【0057】実施例3 BPA−HEMA25.0g(45.09mmol)を
ジメチルホルムアミド14.58gに溶解し、これに
3,4’−オキシジアニリン9.03g(45.09m
mol)を加えた。1時間攪拌した後、ミヒラーケトン
1.57g(5.86mmol)を加え、さらに3時間
攪拌したところ、粘度58ポイズの青みがかった黄色透
明な溶液が得られた。(ポリイミド前駆体換算固形分7
0重量%) 得られた溶液を実施例1と同様に塗工、露光、現像を行
い、ポリイミドパターンを得た。Example 3 25.0 g (45.09 mmol) of BPA-HEMA was dissolved in 14.58 g of dimethylformamide, and 9.03 g of 3,4'-oxydianiline (45.09 m) was added thereto.
mol) was added. After stirring for 1 hour, 1.57 g (5.86 mmol) of Michler's ketone was added, and the mixture was further stirred for 3 hours. As a result, a bluish yellow transparent solution having a viscosity of 58 poise was obtained. (Polyimide equivalent solid content of 7
(0% by weight) The obtained solution was coated, exposed and developed in the same manner as in Example 1 to obtain a polyimide pattern.
【0058】[0058]
【発明の効果】以上のように、本発明の感光性ポリイミ
ド前駆体溶液は、製造が平易で、無機塩もしくは無機イ
オンを含まず、高濃度かつ低粘度であり、この感光性ポ
リイミド前駆体溶液からは耐熱性のポリイミド塗膜又は
レリーフパターンの形成されたポリイミド塗膜が得ら
れ、本発明の製造方法によればポリイミド塗膜が容易に
製造可能である。As described above, the photosensitive polyimide precursor solution of the present invention is easy to produce, does not contain inorganic salts or inorganic ions, has a high concentration and a low viscosity. Thus, a heat-resistant polyimide coating film or a polyimide coating film having a relief pattern formed thereon can be obtained. According to the production method of the present invention, a polyimide coating film can be easily produced.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 FI C08K 5/07 C08K 5/07 C09D 179/08 C09D 179/08 Z G03F 7/028 G03F 7/028 7/038 504 7/038 504 // C08J 7/00 301 C08J 7/00 301 302 302 (72)発明者 越後 良彰 京都府宇治市宇治小桜23番地 ユニチカ株 式会社中央研究所内──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification code FI C08K 5/07 C08K 5/07 C09D 179/08 C09D 179/08 Z G03F 7/028 G03F 7/028 7/038 504 7/038 504 // C08J 7/00 301 C08J 7/00 301 302 302 302 (72) Inventor Yoshiaki Echigo 23 Uji Kozakura, Uji City, Kyoto Prefecture Unitika Research Laboratory
Claims (5)
合物と一般式(2)に示す化合物との塩と、増感剤もし
くは光開始剤とを溶質として溶媒中に溶解していること
を特徴とする感光性ポリイミド前駆体溶液。 【化1】 〔一般式(1)中、Rは少なくとも1つの炭素6員環を
持つ2価の芳香族残基を示す。一般式(2)中、R'
は、少なくとも1つの炭素6員環を含む4価の芳香族残
基を示し、4つのカルボニル基はこの残基中異なった炭
素原子に直接連結しており、4つのうちの2つずつは対
をなし、炭素6員環内の隣接する炭素原子に結合してお
り、R''は化学線によって二量化又は重合可能な炭素−
炭素二重結合を含む感光性基を有する基であり、R'''
は水酸基及び−O- R* (R* は化学線によって二量化
又は重合可能な炭素−炭素二重結合を含むアンモニウム
イオン)で示される感光性を有する基から任意に選ばれ
る。〕1. A solvent comprising a salt of a compound having an amino group represented by the general formula (1) and a compound represented by the general formula (2), and a sensitizer or a photoinitiator dissolved in a solvent as a solute. A photosensitive polyimide precursor solution, characterized in that: Embedded image [In the general formula (1), R represents a divalent aromatic residue having at least one carbon 6-membered ring. In the general formula (2), R ′
Represents a tetravalent aromatic residue containing at least one 6-membered carbon ring, four carbonyl groups are directly linked to different carbon atoms in the residue, and two of the four are paired. Wherein R ″ is a carbon-dimerizable or polymerizable by actinic radiation.
A group having a photosensitive group containing a carbon double bond;
Is arbitrarily selected from a hydroxyl group and a photosensitive group represented by —O — R * (R * is an ammonium ion containing a carbon-carbon double bond that can be dimerized or polymerized by actinic radiation). ]
R、R' 、R''及びR''' は、それぞれ次に示すものか
ら選ばれるものであることを特徴とする請求項1記載の
感光性ポリイミド前駆体溶液。 【化2】 2. The method according to claim 1, wherein R, R ′, R ″ and R ″ ″ in the general formulas (1) and (2) are each selected from the following. 2. The photosensitive polyimide precursor solution according to 1. Embedded image
溶液から得られるポリイミド塗膜。3. A polyimide coating film obtained from the photosensitive polyimide precursor solution according to claim 1.
溶液を基材上に塗工し、加熱してイミド化することを特
徴とするポリイミド塗膜の製造方法。4. A method for producing a polyimide coating film, comprising applying the photosensitive polyimide precursor solution according to claim 1 onto a substrate, and heating to imidize the substrate.
溶液を基材上に塗工し、露光、現像し、加熱イミド化す
ることを特徴とするレリーフパターンの形成されたポリ
イミド塗膜の製造方法。5. A method for producing a polyimide film having a relief pattern formed thereon, comprising applying the photosensitive polyimide precursor solution according to claim 1 onto a substrate, exposing, developing, and heat imidizing. Method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2293798A JPH11217502A (en) | 1998-02-04 | 1998-02-04 | Photosensitive polyimide precursor solution, polyimide coated film obtained therefrom and production of the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2293798A JPH11217502A (en) | 1998-02-04 | 1998-02-04 | Photosensitive polyimide precursor solution, polyimide coated film obtained therefrom and production of the same |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH11217502A true JPH11217502A (en) | 1999-08-10 |
Family
ID=12096556
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2293798A Pending JPH11217502A (en) | 1998-02-04 | 1998-02-04 | Photosensitive polyimide precursor solution, polyimide coated film obtained therefrom and production of the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH11217502A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8729402B2 (en) | 2008-05-20 | 2014-05-20 | Kaneka Corporation | Polyimide precursor composition, use of the of the same, and production method of the same |
US8754186B2 (en) | 2006-12-26 | 2014-06-17 | Kaneka Corporation | Polyimide precursor composition, use thereof and production method thereof |
US9458279B2 (en) | 2008-06-02 | 2016-10-04 | Kaneka Corporation | Resin composition and use thereof |
WO2022172734A1 (en) * | 2021-02-15 | 2022-08-18 | 太陽ホールディングス株式会社 | Polymer composition for porous-film formation, method for producing porous film, porous film, flexible metal-clad laminate, and electronic board |
-
1998
- 1998-02-04 JP JP2293798A patent/JPH11217502A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8754186B2 (en) | 2006-12-26 | 2014-06-17 | Kaneka Corporation | Polyimide precursor composition, use thereof and production method thereof |
US8729402B2 (en) | 2008-05-20 | 2014-05-20 | Kaneka Corporation | Polyimide precursor composition, use of the of the same, and production method of the same |
US9458279B2 (en) | 2008-06-02 | 2016-10-04 | Kaneka Corporation | Resin composition and use thereof |
WO2022172734A1 (en) * | 2021-02-15 | 2022-08-18 | 太陽ホールディングス株式会社 | Polymer composition for porous-film formation, method for producing porous film, porous film, flexible metal-clad laminate, and electronic board |
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