JPH11207602A - Device for holding substrate to be polished and method for polishing substrate - Google Patents

Abstract

[PROBLEMS] To enable a substrate to be pressed against a polishing pad with equal pressing force at a central portion and a peripheral portion of a substrate, and to reduce a polishing rate at a central portion of the substrate and a polishing rate at a peripheral portion. Equal. A substrate holding device (15A) holding a substrate (12) is arranged above a polishing pad (11). The substrate holding device 15A includes a rotation shaft 16A, a substrate holding head 17A provided integrally with the rotation shaft 16A, and a guide member 19A fixed to the substrate holding head 17A. A seal member 20 is provided on the substrate holding head 17A so as to be movable up and down. A first space 21 is formed by the substrate holding head 17A, the sealing member 20 and the substrate 12, and the substrate holding head 17A and the seal The member 20 forms a second space 22.
The first fluid supply path 25 is in communication with the first space 21, and the second fluid supply path 26 is in communication with the second space 22.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of polishing a substrate by performing chemical mechanical polishing (CMP) for flattening the surface of a substrate such as a semiconductor substrate made of silicon or a liquid crystal substrate, and a method of polishing the substrate. The present invention relates to an apparatus for holding a substrate to be polished, which is used in the above.

[0002]

2. Description of the Related Art Since 1990, in the above-mentioned chemical mechanical polishing technique for semiconductor substrates and liquid crystal substrates, the diameter of the substrate has been increased to 10 cm or more, and the polishing tends to be a single wafer processing. In particular, when polishing a semiconductor substrate, uniform polishing is required over the entire surface of the semiconductor substrate because the rule of a line pattern formed on the semiconductor substrate is extremely fine as 0.5 μm or less. It has become

[0003] A conventional substrate polishing apparatus disclosed in Japanese Patent Application Laid-Open No. H8-339979 will be described below with reference to FIGS.

FIG. 4 shows a schematic configuration of a conventional substrate polishing apparatus. In FIG. 4, reference numeral 51 denotes a pad mounting portion 51a made of a rigid body having a flat surface and the pad mounting portion 51a.
Shaft 51b extending vertically downward from the lower surface of the
A platen having a rotating means (not shown) for rotating 1b, and a polishing pad 52 having elasticity is attached to an upper surface of a pad mounting portion 51a of the platen 51. Above the polishing pad 52, a substrate holding head 54 that holds and rotates the substrate 53 is provided. The substrate 53 is pressed against the polishing pad 52 while being rotated by the substrate holding head 54. In FIG. 4, reference numeral 55 denotes an abrasive, and the abrasive 55 is dropped onto the polishing pad 52 by a predetermined amount from an abrasive supply pipe 56.

FIG. 5 shows a cross-sectional structure of the conventional substrate polishing apparatus. A ring-shaped sealing member 57 made of an elastic material is provided inside the substrate holding head 54 at a position facing the peripheral edge of the substrate 53. Are provided so as to be able to move up and down, and the substrate holding head 54, the sealing member 57 and the substrate 53
This forms a space 58. A pressure fluid is supplied to the space 58 from a fluid flow passage 59 provided inside the rotation shaft 54 a of the substrate holding head 54, and the substrate 53
Is pressed against the polishing pad 52 by the pressurized fluid supplied to the space 58.

In the substrate polishing apparatus constructed as described above, an abrasive 55 is supplied onto a polishing pad 52 which rotates together with a surface plate 51, and a substrate 53 held by a substrate holding head 54 is placed in a space 58. When pressed against the polishing pad 52 by the pressure of the pressurized fluid supplied to the
Is polished under pressure and relative speed.

At this time, if there is an uneven portion on the polishing surface of the substrate 53, the contact pressure with the polishing pad 52 is large at the convex portion, so that the relative polishing rate is increased and the polishing is performed. Because of the low contact pressure with, it is hardly polished. Thus, the unevenness of the polished surface of the substrate 53 is reduced, and the polished surface of the substrate 53 becomes flat.

In the conventional substrate polishing apparatus, the substrate 53 is pressed against the polishing pad 52 by a pressurized fluid supplied to a space 58 formed by the substrate holding head 54, the sealing member 57 and the substrate 53. Is employed, uniform pressing of the substrate 53 against the polishing pad 52 is achieved.

[0009]

However, the conventional substrate polishing apparatus is not sufficient in terms of uniform pressing of the substrate 53 against the polishing pad 52. Hereinafter, the reason will be described.

When the pressurized fluid is supplied from the fluid flow passage 59 to the space 58, the central portion of the substrate 53 is pressed against the polishing pad 52 by receiving a pressing force consisting of only the pressure of the pressurized fluid. The portion is pressed against the polishing pad 52 by receiving a pressing force composed of both the pressure of the pressurized fluid and the weight of the seal member 57.

By the way, since the thickness of the seal member 57 cannot be made too thin due to the necessity of maintaining the shape of the seal member 57, the weight of the seal member 57 is so large that it cannot be ignored.

For this reason, the peripheral portion of the substrate 53 receives a greater pressing force than the central portion of the substrate 53. Therefore, the polishing rate of the peripheral portion of the substrate 53 is higher than the polishing rate of the peripheral portion of the substrate 53. There is a problem that it becomes.

In view of the foregoing, the present invention provides a polishing rate of a central portion of a substrate and a polishing rate of a peripheral portion so that a substrate can be pressed against a polishing pad with equal pressing force at a central portion and a peripheral portion of the substrate. The purpose is to equalize

[0014]

In order to achieve the above object, a holding apparatus for a substrate to be polished according to the present invention holds a substrate to be polished and presses the held substrate to be polished against a polishing pad. A substrate holding head, which is provided to be capable of moving back and forth with respect to a polishing pad and holds a substrate to be polished, and a portion of the substrate holding head which is opposed to a peripheral portion of the substrate to be polished and is in contact with the substrate holding head. A first space is formed detachably with the substrate holding head and the substrate to be polished mounted on the polishing pad, and a second space is formed outside the first space with the substrate holding head. A first fluid supply path provided on the substrate holding head, for supplying a pressurized fluid for pressing the substrate to be polished mounted on the polishing pad to the polishing pad to the first space, Holding Provided de, the supply pressurized fluid for pressing the sealing member to the polishing pad to the second space 2
Fluid supply path.

According to the apparatus for holding a substrate to be polished of the present invention,
A pressurized fluid is supplied from a first fluid supply path to a first space formed by a substrate holding head, a substrate to be polished, and a seal member to press a region excluding a peripheral portion of the substrate to be polished against a polishing pad. And a second space formed by the substrate holding head and the seal member.
A pressurized fluid can be supplied from the fluid supply path of (1), and the peripheral portion of the substrate to be polished can be pressed against the polishing pad via the seal member.

The apparatus for holding a substrate to be polished according to the present invention is provided outside the portion of the substrate holding head where the seal member is provided so as to be capable of coming into contact with and separating from the substrate holding head. A guide member for forming a portion outside the second space portion and holding a substrate to be polished mounted on the polishing pad at a predetermined position; and a substrate holding head for pressing the guide member against the polishing pad. It is preferable to further include a third fluid supply path for supplying the pressurized fluid to the third space.

A substrate polishing method according to the present invention is directed to a substrate polishing method for polishing a substrate to be polished by pressing the substrate against a polishing pad, and includes a substrate holding head for holding a substrate to be polished, and a substrate holding head for holding the substrate. A substrate to be polished mounted on the polishing pad in a state, and a portion of the substrate holding head opposed to a peripheral portion of the substrate to be polished mounted on the polishing pad is provided so as to be able to contact and separate from the substrate holding head. A pressurized fluid is supplied from a first fluid supply path provided in the substrate holding head to a first space formed by the provided sealing member, and the substrate to be polished placed on the polishing pad is removed. Pressing the polishing pad, and supplying a pressurized fluid from a second fluid supply path provided in the substrate holding head to a second space formed by the substrate holding head and the sealing member; Polishing pad And a step of pressing the mode.

According to the method of polishing a substrate of the present invention, a pressurized fluid is supplied from a first fluid supply path to a first space formed by a substrate holding head, a substrate to be polished, and a sealing member to thereby polish the substrate to be polished. A region excluding the peripheral edge portion can be pressed against the polishing pad, and the pressurized fluid is supplied from the second fluid supply path to the second space formed by the substrate holding head and the seal member to form the seal member. Thus, the peripheral portion of the substrate to be polished can be pressed against the polishing pad.

In the method of polishing a substrate according to the present invention, the pressure of the pressurized fluid supplied to the second space is (pressure of the pressurized fluid supplied to the first space) − ｛(pressure of the seal member). (Self-weight) / (contact area of seal member with substrate to be polished)｝

According to the method of polishing a substrate of the present invention, a substrate holding head and a substrate to be polished are provided outside the portion of the substrate holding head where the seal member is provided so as to be capable of coming into contact with and separating from the substrate holding head. Supplying a pressurized fluid from a third fluid supply path provided in the substrate holding head to a third space formed by the guide member held at a predetermined position, and pressing the guide member against the polishing pad; It is preferable to further include

In this case, it is preferable that the pressure of the pressurized fluid supplied to the third space is equal to or greater than the pressure of the pressurized fluid supplied to the first space.

[0022]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view of a holding apparatus for a substrate to be polished and a method of polishing a substrate according to each embodiment of the present invention.

(First Embodiment) FIG. 1 is a schematic sectional view of an apparatus for holding a substrate to be polished according to a first embodiment of the present invention. In FIG. 1, reference numeral 10 denotes a rotatable surface plate made of a rigid body having a flat surface, and a polishing pad 11 having elasticity is attached to an upper surface of the surface plate. Above the polishing pad 11, a substrate holding device 15A for holding a substrate 12 as a substrate to be polished to be polished is arranged, and the substrate holding device 15A is held so as to be vertically movable and rotatable. A rotating shaft 16A, a disk-shaped substrate holding head 17A integrally provided at a lower end of the rotating shaft 16A and having a concave portion 17a on a lower surface, and a substrate holding head 17A integrated with the concave portion 17a of the substrate holding head 17A. A fluid dispersion plate 18 having a dispersion hole 18a is provided, and a ring-shaped guide member 19A fixed to the lower surface of the peripheral portion of the substrate holding head 17A. Guide member 19A
Prevents the substrate 12 from jumping outward due to centrifugal force caused by rotation.

FIG. 2 is a bottom view of the substrate 12 and the guide member 19A. A plurality of concave grooves 19a are provided on the bottom surface of the guide member 19A.

As a feature of the first embodiment, a ring-shaped recess is formed between the peripheral portion of the substrate holding head 17A and the fluid dispersion plate 18, and the ring-shaped recess is made of an elastic material. A ring-shaped seal member 20 is provided to be vertically movable. Thus, the first space 21 is formed by the fluid dispersion plate 18 of the substrate holding head 17A, the sealing member 20, and the substrate 12 placed on the polishing pad 11, and the substrate holding head 17A And the seal member 20 form a second space 22.

The rotary shaft 16A is provided with, for example, one first fluid supply path 25 and, for example, a plurality of second fluid supply paths 26 for supplying a pressurized fluid, for example, pressurized air, independently of each other. . The first fluid supply passage 25 is connected to the fluid distribution plate 18.
Are connected to the first space portion 21 via the dispersion holes 18a of the second space portion 22a.
Is in communication with Accordingly, a region excluding the peripheral portion of the substrate 12 (hereinafter, referred to as a center portion for convenience of description) is a pressurized fluid supplied to the first space portion 21 from the first fluid supply passage 25, such as pressurized air. Is pressed against the polishing pad 11 by the pressing force of the second fluid supply path 26.
Is pressed against the polishing pad 11 by the total pressing force of the pressure of the pressurized fluid, for example, pressurized air supplied to the second space 22 and the weight of the seal member 20.

As described above, according to the apparatus for holding a substrate to be polished according to the first embodiment, the first fluid supply path 2
5 presses the central portion of the substrate 12 against the polishing pad 11 by the pressure of the pressurized fluid supplied to the first space 21, and is supplied to the second space 22 from the second fluid supply passage 26. In order to press the peripheral portion of the substrate 12 against the polishing pad 11 by the pressure of the pressurized fluid, a pressing force for pressing the central portion of the substrate 12 against the polishing pad 11 and a pressing force for pressing the peripheral portion of the substrate 11 against the polishing pad 11 are required. Can be controlled independently of each other.

Hereinafter, a method of polishing a substrate using the apparatus for holding a substrate to be polished according to the first embodiment will be described.

First, an abrasive containing abrasive grains is applied to the polishing pad 1.
1 while dropping on the surface plate 10 and thus the polishing pad 11
And the substrate holding head 17A are relatively rotated, and the rotating shaft 16A is pressed against the polishing pad 11 with a predetermined pressing force. Further, the first fluid supply passage 25 is connected to the first space portion 21.
And a pressurized fluid at a predetermined pressure is supplied from the second fluid supply passage 26 to the second space 22.

Here, the relationship between the pressing force applied to the rotating shaft 16A and the pressure of the pressurized fluid supplied to the first space 21 will be discussed.

The pressure of the pressurized fluid supplied to the first space 21 is (the pressing force applied to the rotating shaft 16A) ÷ (the substrate 1
(Area of 2) is preferably slightly smaller than 1.0 times. For example, a substrate 1 made of silicon having a diameter of 8 inches
2 is pressed against the polishing pad 11 at a pressure of 500 g / cm ² to perform polishing, the pressing force applied to the substrate 12 is 15
Therefore, a pressing force slightly larger than 157 kg, for example, 160 kg is applied to the rotating shaft 16A.

In this way, the pressing force applied to the rotating shaft 16A, and eventually the guide member 19A,
The pressing force for pressing 1 is slightly larger than the pressing force for the pressurized fluid supplied to the first space 21 to press the substrate 12 against the polishing pad 11. Therefore, the guide member 19 </ b> A adjusts the region of the polishing pad 11 immediately before the substrate 12 comes into contact with the rotation of the polishing pad 11,
1 can be elastically deformed in advance by pressing with a pressing force slightly larger than the pressing force for pressing the substrate 1, so that the peripheral edge of the substrate 12 receives a reaction force from the polishing pad 11, and the peripheral edge of the substrate 12 is polished. The situation where the rate rises abnormally can be suppressed.

The pressure of the pressurized fluid supplied to the second space 22 is (the pressure of the pressurized fluid supplied to the first space 21) − {(self-weight of the seal member 20)} (the seal member 20).
(Contact area with the substrate 12)｝).

In this manner, the peripheral portion of the substrate 12 is pressed against the polishing pad 11 by the pressure of the pressurized fluid supplied to the second space 22 and the weight of the sealing member 20, and the pressing force of the substrate 12 is reduced. Since the pressing force applied to the polishing pad 11 by the pressurized fluid supplied to the first space portion 21 at the central portion becomes equal, the central portion and the peripheral portion of the substrate 12 are pressed against the polishing pad 11 by the same pressing force. Since the pressing is performed, the polishing rate for the central portion and the peripheral portion of the substrate 12 becomes uniform.

As described above, since the seal member 20 is in contact with the substrate 12 only by receiving its own weight and the pressure of the pressurized fluid supplied to the second space 22, the first space The pressurized fluid supplied to the part 21 is
It leaks out from the contact surface between 0 and the substrate 12 through the concave groove 19a of the guide member 19A. In this case, the rotating shaft 16
Since the pressure applied to A is slightly higher than the pressure of the pressurized fluid supplied to the first space 21, the substrate holding head 1
There is no danger that the 7A and the guide member 19A will be pushed upward by the pressure of the pressurized fluid leaking from the first space 21 to the outside.

(Second Embodiment) FIG. 3 is a schematic sectional view of an apparatus for holding a substrate to be polished according to a second embodiment of the present invention. In FIG. 3, reference numeral 10 denotes a rotatable surface plate made of a rigid body having a flat surface, and an elastic polishing pad 11 is attached to the upper surface of the surface plate. Above the polishing pad 11, a substrate holding device 15B that holds a substrate 12 as a substrate to be polished to be polished is disposed, and the substrate holding device 15B is held rotatably up and down and rotatable. A rotating shaft 16B, a disk-shaped substrate holding head 17B integrally provided at a lower end of the rotating shaft 16B and having a concave portion 17a on a lower surface, and a substrate holding head 17B integrated with the concave portion 17a of the substrate holding head 17B. And a fluid dispersion plate 18 having a dispersion hole 18a.

As in the first embodiment, a ring-shaped recess is formed between the substrate holding head 17B and the fluid dispersion plate 18, and a ring-shaped recess made of an elastic material is formed in the ring-shaped recess. Is provided so as to be vertically movable. Thus, the first space 21 is formed by the fluid dispersion plate 18 of the substrate holding head 17B, the sealing member 20, and the substrate 12 placed on the polishing pad 11, and the substrate holding head 17B A second space 22 is formed by the seal member 20.

Further, similarly to the first embodiment, the rotating shaft 16
B is supplied with a pressurized fluid independently of each other, for example, 1
One first fluid supply channel 25 and, for example, a plurality of second fluid supply channels 26 are provided. The first fluid supply passage 25 is connected to the first space 2 through the dispersion holes 18a of the fluid dispersion plate 18.
1 and each second fluid supply passage 26 communicates with the second space 22.

As a feature of the second embodiment, the rotating shaft 16
B can move up and down, but when it moves down, the polishing pad 11
Is fixed at a position having a predetermined interval with respect to. That is, the rotating shaft 16B is held so as not to move downward below the predetermined position.

A ring-shaped concave portion is formed on the lower surface of the peripheral portion of the substrate holding head 17B, and a ring-shaped guide member 19B having a hat-shaped cross section is vertically movable in the ring-shaped concave portion. Is provided. As a result, the third state is achieved by the substrate holding head 17B and the guide member 19B.
Is formed. As in the first embodiment, the guide member 19B has a function of preventing the substrate 12 from jumping outward due to centrifugal force caused by rotation. Further, as shown in FIG. A plurality of concave grooves 19a are provided.

The rotating shaft 16B has a plurality of third fluid supply passages for independently supplying a pressurized fluid such as pressurized air to the first fluid supply passage 25 and the second fluid supply passage 26. 27 are provided, and each third fluid supply path 27 communicates with the third space 23.

Accordingly, the guide member 19B is pressed against the polishing pad 11 by the pressing force of the pressurized fluid, for example, pressurized air supplied from the third fluid supply passage 27 to the third space 23, so that the guide member 19B The polishing pad 19B is pressed against the polishing pad 11 by receiving a pressing force independent of the pressing force applied to the rotating shaft 16B.

Hereinafter, a method for polishing a substrate using the apparatus for holding a substrate to be polished according to the second embodiment will be described.

First, in the same manner as in the first embodiment, while the abrasive containing abrasive grains is dropped on the polishing pad 11,
As a result, the polishing pad 11 and the substrate holding head 17B are relatively rotated, and the rotating shaft 16B is pressed against the polishing pad 11 with a predetermined pressing force. Also, the first fluid supply path 25
Supplies a pressurized fluid of a predetermined pressure to the first space 21 and supplies a pressurized fluid of a predetermined pressure to the second space 22 from the second fluid supply passage 26. The relationship between the pressing force applied to the rotating shaft 16B, the pressure of the pressurized fluid supplied to the first space 21 and the pressure of the pressurized fluid supplied to the second space 22 is the same as in the first embodiment. The same is true.

The pressure of the pressurized fluid supplied to the third space 23 for pressing the guide member 19B against the polishing pad 11 is such that the pressure of the surface (lower surface) of the guide member 19B in contact with the polishing pad 11 is the first pressure. It is preferable that the pressure of the pressurized fluid supplied to the space portion 21 is set to be equal to or higher than the pressure at which the substrate 12 is pressed against the polishing pad 11.

Thus, the guide member 19B is
A region of the polishing pad 11 immediately before the substrate 12 comes into contact with the rotation of the polishing pad 11 is elastically deformed in advance by pressing the region with a pressure equal to or higher than the pressing force of the substrate 12 pressing the polishing pad 11. Therefore, it is possible to suppress a situation where the peripheral portion of the substrate 12 receives a large reaction force from the polishing pad 11 and the polishing rate for the peripheral portion of the substrate 12 abnormally increases.

In the first and second embodiments,
The seal member 20 is pressed against the polishing pad 11 by the pressure of the pressurized fluid supplied to the second space portion 22. Instead, the seal member 20 is pressed against the polishing pad 11 by mechanical pressing means such as an air cylinder. It may be pressed.

In the second embodiment, the guide member 19B is pressed against the polishing pad 11 by the pressure of the pressurized fluid supplied to the third space 23. Instead, the guide member 19B is The polishing pad 11 may be pressed by a mechanical pressing means such as an air cylinder.

[0049]

According to the apparatus for holding a substrate to be polished according to the present invention, a pressurized fluid is supplied to the first space from the first fluid supply path, and a region excluding a peripheral portion of the substrate to be polished is formed on the polishing pad. In addition to being able to press, the pressurized fluid can be supplied to the second space from the second fluid supply path to press the peripheral portion of the substrate to be polished to the polishing pad via the seal member. Since the pressing force for pressing the region excluding the portion against the polishing pad and the pressing force for pressing the peripheral portion of the substrate to be polished against the polishing pad can be controlled independently of each other, the pressure of the pressurized fluid supplied to the first space portion can be controlled. Since the pressure and the pressure of the pressurized fluid supplied to the second space can be optimized and the substrate to be polished can be pressed against the polishing pad with a uniform pressing force in the plane, the polishing rate for the substrate to be polished can be reduced. In the plane Can.

The apparatus for holding a substrate to be polished according to the present invention comprises a guide member forming a third space together with the substrate holding head;
Optimizing the pressure of the pressurized fluid supplied to the third space by providing a third fluid supply path for supplying the pressurized fluid for pressing the guide member to the third space. Thereby, the region immediately before the substrate to be polished in the polishing pad by the guide member can be elastically deformed in advance by pressing the region to be polished with a pressure equal to or more than the pressing force for pressing the polishing pad. In addition, it is possible to suppress a situation where the peripheral portion of the substrate to be polished receives a reaction force from the polishing pad and the polishing rate for the peripheral portion of the substrate to be polished abnormally increases.

According to the substrate polishing method of the present invention, in the substrate pressing step, a pressurized fluid is supplied from the first fluid supply path to the first space portion, and the region excluding the peripheral portion of the substrate to be polished is formed on the polishing pad. In addition to being able to press, the pressurizing fluid can be supplied from the second fluid supply path to the second space portion in the sealing member pressing step, and the peripheral portion of the substrate to be polished can be pressed against the polishing pad via the sealing member. Since the pressing force for pressing the region of the substrate other than the peripheral portion against the polishing pad and the pressing force for pressing the peripheral portion of the substrate to be polished against the polishing pad can be controlled independently of each other, the pressure supplied to the first space portion can be controlled. By optimizing the pressure of the pressurized fluid and the pressure of the pressurized fluid supplied to the second space portion, the substrate to be polished can be pressed against the polishing pad with a uniform pressing force in the plane, whereby the substrate to be polished can be pressed. Polishing lathe It can be made uniform in the plane.

In the substrate polishing method of the present invention, the pressure of the pressurized fluid supplied to the second space is (pressure of the pressurized fluid supplied to the first space) − ｛(pressure of the seal member). When substantially equal to (self-weight) / (contact area of the sealing member with the substrate to be polished)｝, a pressing force for pressing a region except a peripheral portion of the substrate to be polished against the polishing pad and a peripheral portion of the substrate to be polished are pressed against the polishing pad. Since the pressing force to be polished can be made equal, the substrate to be polished can be pressed against the polishing pad with a uniform pressing force in the plane, so that the polishing rate for the substrate to be polished can be surely made uniform in the plane.

If the method for polishing a substrate of the present invention includes a guide member pressing step of pressing the guide member against the polishing pad by supplying a pressurized fluid from the third fluid supply path to the third space, By optimizing the pressure of the pressurized fluid supplied to the third space, a region of the polishing pad immediately before the substrate to be polished comes into contact with the guide member is substantially equal to the pressing force with which the substrate to be polished presses the polishing pad. Or, it can be elastically deformed in advance by pressing with a higher pressure, so that the peripheral portion of the substrate to be polished receives a reaction force from the polishing pad and the polishing rate for the peripheral portion of the substrate to be polished abnormally increases. Can be suppressed.

In this case, when the pressure of the pressurized fluid supplied to the third space portion is equal to or greater than the pressure of the pressurized fluid supplied to the first space portion, the guide member covers the polishing pad. Since the region immediately before the polishing substrate comes into contact can be elastically deformed in advance, the peripheral portion of the substrate to be polished receives a reaction force from the polishing pad, and the polishing rate for the peripheral portion of the substrate to be polished abnormally rises. It can be suppressed reliably.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of an apparatus for holding a substrate to be polished according to a first embodiment of the present invention.

FIG. 2 is a bottom view of a substrate and a guide member in the device for holding a substrate to be polished according to the first and second embodiments of the present invention.

FIG. 3 is a schematic sectional view of an apparatus for holding a substrate to be polished according to a second embodiment of the present invention.

FIG. 4 is a schematic perspective view of a conventional substrate polishing apparatus.

FIG. 5 is a schematic sectional view of a conventional substrate polishing apparatus.

[Explanation of symbols]

 Reference Signs List 10 surface plate 11 polishing pad 12 substrate 15A, 15B substrate holding device 16A, 16B rotating shaft 17A, 17B substrate holding head 17a recess 18 fluid dispersion plate 18a dispersion hole 19A, 19B guide member 19a concave groove 20 seal member 21 first space Part 22 Second space part 23 Third space part 25 First fluid supply path 26 Second fluid supply path 27 Third fluid supply path

Claims (6)

[Claims] An apparatus for holding a substrate to be polished, which holds the substrate to be polished and presses the held substrate to be polished against a polishing pad, wherein the apparatus is provided so as to be able to advance and retreat with respect to the polishing pad, and holds the substrate to be polished. A substrate holding head, a substrate facing the peripheral edge of the substrate to be polished in the substrate holding head, being provided so as to be able to come into contact with and separate from the substrate holding head, and being mounted on the substrate holding head and the polishing pad. A sealing member that forms a first space together with the polishing substrate and forms a second space outside the first space together with the substrate holding head; and a sealing member provided on the substrate holding head and on the polishing pad. A first fluid supply path for supplying a pressurized fluid for pressing a substrate to be polished placed on the polishing pad to the polishing pad to the first space portion; and a sealing portion provided on the substrate holding head. The apparatus for holding a substrate to be polished, characterized in that the pressurized fluid for pressing the polishing pad and a second fluid supply path for supplying to the second space. 2. The substrate holding head is provided outside the portion of the substrate holding head where the seal member is provided so as to be capable of coming into contact with and separating from the substrate holding head. A guide member formed outside the space portion and holding a substrate to be polished mounted on the polishing pad at a predetermined position; and a guide member provided on the substrate holding head, for pressing the guide member against the polishing pad. The apparatus for holding a substrate to be polished according to claim 1, further comprising a third fluid supply path for supplying a pressurized fluid to the third space. 3. A method of polishing a substrate by polishing a substrate to be polished by pressing the substrate against a polishing pad, the method comprising: a substrate holding head for holding a substrate to be polished; A mounted substrate to be polished, and a seal provided at a portion of the substrate holding head opposed to a peripheral portion of the polished substrate mounted on the polishing pad so as to be able to contact and separate from the substrate holding head. In the first space formed by the member and
A step of supplying a pressurized fluid from a first fluid supply path provided in the substrate holding head to press a substrate to be polished placed on the polishing pad against the polishing pad; Supplying a pressurized fluid from a second fluid supply path provided in the substrate holding head to a second space formed by the seal member, and pressing the seal member against the polishing pad; A method for polishing a substrate, comprising: 4. The pressure of the pressurized fluid supplied to the second space portion is (pressure of the pressurized fluid supplied to the first space portion) − ｛(self-weight of the seal member) / ( 4. The substrate polishing method according to claim 3, wherein the contact area of the seal member with the substrate to be polished is substantially equal to｝. 5. A substrate holding head, which is provided outside the portion of the substrate holding head where the seal member is provided so as to be able to come into contact with and separate from the substrate holding head, and holds the substrate to be polished at a predetermined position. A step of supplying a pressurized fluid from a third fluid supply path provided in the substrate holding head to a third space formed by the guide member and pressing the guide member against the polishing pad. The method for polishing a substrate according to claim 3, wherein the polishing method is provided. 6. The pressure of the pressurized fluid supplied to the third space is substantially equal to or greater than the pressure of the pressurized fluid supplied to the first space. A method for polishing a substrate according to claim 5.