JPH11177074A - Solid-state imaging device - Google Patents
Solid-state imaging deviceInfo
- Publication number
- JPH11177074A JPH11177074A JP34042997A JP34042997A JPH11177074A JP H11177074 A JPH11177074 A JP H11177074A JP 34042997 A JP34042997 A JP 34042997A JP 34042997 A JP34042997 A JP 34042997A JP H11177074 A JPH11177074 A JP H11177074A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- imaging device
- state imaging
- base
- concave portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 61
- 239000003566 sealing material Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229920005992 thermoplastic resin Polymers 0.000 claims abstract description 17
- 229920005989 resin Polymers 0.000 claims abstract description 16
- 239000011347 resin Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 13
- 238000001746 injection moulding Methods 0.000 claims abstract description 12
- 239000003822 epoxy resin Substances 0.000 claims description 31
- 229920000647 polyepoxide Polymers 0.000 claims description 31
- 239000002245 particle Substances 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 229920000800 acrylic rubber Polymers 0.000 claims description 14
- 229920000058 polyacrylate Polymers 0.000 claims description 14
- 239000011521 glass Substances 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229920000106 Liquid crystal polymer Polymers 0.000 claims description 6
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 6
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 5
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 5
- 239000012943 hotmelt Substances 0.000 claims description 4
- 238000007789 sealing Methods 0.000 abstract description 2
- 239000002585 base Substances 0.000 description 47
- 238000000465 moulding Methods 0.000 description 8
- 239000002243 precursor Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 230000007547 defect Effects 0.000 description 5
- 239000011358 absorbing material Substances 0.000 description 4
- 230000013011 mating Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- -1 specifically Polymers 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005886 esterification reaction Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000000088 plastic resin Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
(57)【要約】
【課題】固体撮像装置の外表面にバリが形成されて外観
不良が発生する。
【解決手段】上面に固体撮像素子3を収容するための凹
部1aを有し、荷重たわみ温度が200℃以上の熱可塑
性樹脂から成り、射出成形で形成された基体1と、前記
凹部1aの内側から外側にかけて導出された複数個のリ
ード端子4と、前記基体1の凹部1a内に収容された固
体撮像素子3と、前記基体1の上面に封止材7を介して
接合され、前記凹部1aを塞ぐ透光性ガラスから成る蓋
体2とから成り、前記封止材7は弾性率が5GPa以下
の有機樹脂で形成されており、かつ前記凹部1a内のリ
ード端子4が導出する領域に防湿材6が配設されてい
る。
(57) [Summary] A burr is formed on an outer surface of a solid-state imaging device to cause poor appearance. A substrate 1 having a concave portion 1a for accommodating a solid-state imaging device 3 on its upper surface, made of a thermoplastic resin having a deflection temperature under load of 200 ° C. or more, and formed by injection molding, and an inside of the concave portion 1a. A plurality of lead terminals 4 led out from the outside, the solid-state imaging device 3 housed in the concave portion 1a of the base 1, and the upper surface of the base 1 are joined to the upper surface of the base 1 via a sealing material 7, and the concave portion 1a The sealing member 7 is formed of an organic resin having an elastic modulus of 5 GPa or less, and is provided in the recess 1a in a region where the lead terminal 4 is led out. Material 6 is provided.
Description
【0001】[0001]
【発明の属する技術分野】本発明は固体撮像素子収納用
パッケージ内に固体撮像素子を気密に収容して成る固体
撮像装置に関するものである。[0001] 1. Field of the Invention [0002] The present invention relates to a solid-state image pickup device in which a solid-state image pickup device is hermetically accommodated in a solid-state image pickup device storage package.
【0002】[0002]
【従来の技術】従来、固体撮像装置は固体撮像素子収納
用パッケージ内に固体撮像素子を気密に収容して形成さ
れており、具体的には、まずエポキシ樹脂等の熱硬化性
樹脂から成り、上面に固体撮像素子を搭載収容するため
の凹部を有する基体と、内端部が前記基体の凹部内部に
露出するとともに外端部が前記基体の外部に突出した複
数のリード端子と、前記基体の上面にエポキシ樹脂から
成る封止材を介して取着され、基体の凹部を塞ぐ透光性
ガラスから成る蓋体とから構成される固体撮像素子収納
用パッケージを準備し、次にこの固体撮像素子収納用パ
ッケージの基体に設けた凹部底面に固体撮像素子をエポ
キシ樹脂等の樹脂製接着剤を介して接着固定するととも
に該固体撮像素子の各電極をリード端子の内端部にボン
デイングワイヤーを介して電気的に接続し、しかる後、
基体の上面に透光性ガラスから成る蓋体をエポキシ樹脂
から成る封止材を介して接合させ、固体撮像素子を基体
と蓋体とから成る容器内部に気密に収容することによっ
て製作されている。2. Description of the Related Art Conventionally, a solid-state image pickup device is formed by hermetically containing a solid-state image pickup device in a package for accommodating the solid-state image pickup device. Specifically, first, a solid-state image pickup device is made of a thermosetting resin such as an epoxy resin. A base having a concave portion for mounting and housing the solid-state imaging element on the upper surface, a plurality of lead terminals having an inner end exposed inside the concave portion of the base and an outer end protruding outside the base; A package for housing a solid-state imaging device is provided, comprising a translucent glass lid attached to the upper surface via a sealing material made of epoxy resin and closing the concave portion of the base. The solid-state imaging device is bonded and fixed to the bottom surface of the recess provided in the base of the storage package via a resin adhesive such as epoxy resin, and each electrode of the solid-state imaging device is bonded to the inner end of the lead terminal by a bonding wire. Via electrically connected to, thereafter,
It is manufactured by bonding a lid made of translucent glass to the upper surface of the base via a sealing material made of epoxy resin and hermetically housing the solid-state imaging device inside a container consisting of the base and the lid. .
【0003】かかる固体撮像装置は固体撮像素子収納用
パッケージの外部に突出した複数のリード端子を外部電
気回路に接続させ、内部に収容する固体撮像素子の各電
極を外部電気回路に接続するとともに光学的画像を透光
性ガラスから成る蓋体を介して固体撮像素子に照射結像
させ、固体撮像素子に光電変換を起こさせることによっ
てビデオカメラ等の撮像装置として機能する。In such a solid-state image pickup device, a plurality of lead terminals protruding outside a package for accommodating a solid-state image pickup device are connected to an external electric circuit. The solid-state image sensor is irradiated with a target image via a cover made of translucent glass to form an image, and the solid-state image sensor performs photoelectric conversion to function as an imaging device such as a video camera.
【0004】なお、前記固体撮像装置に使用される固体
撮像素子収納用パッケージの基体としては、一般に寸法
精度を高くすることができ、かつリード端子、封止材、
固体撮像素子等との接着性に優れ、更に機械的強度、耐
環境性、電気絶縁性に優れる熱硬化時の収縮が少ないエ
ポキシ樹脂を採用することによって形成されており、ト
ランスファーモールド法(移送成形法)によって、即
ち、2つの割り型から成る樹脂成形用金型の内側に、注
入口よりエポキシ樹脂前駆体を注入し、次にこれを約1
80℃の温度で2〜4分間キュアし、その後、金型から
取り出し、オーブン中、約50℃の温度でポストキュア
し、前記エポキシ樹脂前駆体を熱硬化させることによっ
て所定の形状に製作されている。Incidentally, as a base of a package for accommodating a solid-state imaging device used in the solid-state imaging device, generally, dimensional accuracy can be increased, and a lead terminal, a sealing material,
It is formed by using an epoxy resin that has excellent adhesion to solid-state imaging devices and has excellent mechanical strength, environmental resistance, and excellent electrical insulation. Method), that is, an epoxy resin precursor is injected from an injection port into the inside of a resin molding die composed of two split dies,
Cured at a temperature of 80 ° C. for 2 to 4 minutes, then removed from the mold, post-cured in an oven at a temperature of about 50 ° C., and heat-cured the epoxy resin precursor to produce a predetermined shape. I have.
【0005】[0005]
【発明が解決しようとする課題】しかしながら、この従
来の固体撮像装置においては、固体撮像素子収納用パッ
ケージの基体がエポキシ樹脂により形成されており、該
エポキシ樹脂はキュアに2〜4分と長時間を用するた
め、キュアの間にエポキシ樹脂前駆体の一部が割り型の
合わせ部に侵入して内外表面にバリが形成され、該バリ
に起因した外観不良が発生するとともにリード端子の内
端部がバリで被覆されてボンディングワイヤを接続する
ことができないという欠点を有していた。However, in this conventional solid-state imaging device, the base of the package for housing the solid-state imaging device is formed of an epoxy resin, and the epoxy resin is cured for a long time of 2 to 4 minutes. During the cure, a part of the epoxy resin precursor enters the mating portion of the split mold, and burrs are formed on the inner and outer surfaces. There was a disadvantage that the portion was covered with burrs and the bonding wire could not be connected.
【0006】またこの外観不良等の原因となるバリをウ
ォータジェット等によって除去することも考えられる
が、ウォータジェット等によってバリを除去した場合、
バリの一部が微粉末となって基体の凹部内に付着し、こ
れが基体の凹部内に収容される固体撮像素子の表面に付
着して固体撮像素子に外部の光学的画像に対応する正確
な光電変換を起こさせることができなくなるという欠点
が誘発されてしまう。It is also conceivable to remove burrs that cause the appearance defect by a water jet or the like. However, when the burrs are removed by a water jet or the like,
Part of the burrs becomes fine powder and adheres to the concave portion of the base, which adheres to the surface of the solid-state imaging device housed in the concave portion of the base, and the solid-state imaging device has an accurate optical image corresponding to an external optical image. The disadvantage that photoelectric conversion cannot be caused is induced.
【0007】更に前記基体をトランスファーモールド法
によって製作する際、一定温度を維持しながら長時間加
熱するポストキュア工程が必要であり、その結果、量産
性が極めて劣り、製品としての固体撮像装置を高価とし
てしまう欠点も有していた。Further, when the substrate is manufactured by the transfer molding method, a post-curing step of heating for a long time while maintaining a constant temperature is required. As a result, mass productivity is extremely poor, and a solid-state imaging device as a product is expensive. There was also a drawback that it would be.
【0008】本発明は上記欠点に鑑み案出されたもの
で、その目的は外観不良を発生することなく、リード端
子に半導体素子の各電極を確実、強固に電気的接続し、
固体撮像素子に外部の光学的画像に対応する正確な光電
変換を起こさせることができる安価な固体撮像装置を提
供することにある。The present invention has been devised in view of the above-mentioned drawbacks, and has as its object to surely and firmly electrically connect each electrode of a semiconductor element to a lead terminal without causing an appearance defect.
An object of the present invention is to provide an inexpensive solid-state imaging device capable of causing a solid-state imaging device to perform accurate photoelectric conversion corresponding to an external optical image.
【0009】[0009]
【課題を解決するための手段】本発明の固体撮像装置
は、上面に固体撮像素子を収容するための凹部を有し、
荷重たわみ温度が200℃以上の熱可塑性樹脂から成
り、射出成形で形成された基体と、前記凹部の内側から
外側にかけて導出された複数個のリード端子と、前記基
体の凹部内に収容された固体撮像素子と、前記基体の上
面に封止材を介して接合され、前記凹部を塞ぐ透光性ガ
ラスから成る蓋体とから成り、前記封止材は弾性率が5
GPa以下の有機樹脂で形成されており、かつ前記凹部
内のリード端子が導出する領域に防湿材が配設されてい
ることを特徴とするものである。The solid-state imaging device according to the present invention has a concave portion for accommodating a solid-state imaging element on an upper surface thereof.
A base made of a thermoplastic resin having a deflection temperature under load of 200 ° C. or higher, formed by injection molding, a plurality of lead terminals led from the inside to the outside of the recess, and a solid housed in the recess of the base. An image sensor, and a lid made of a translucent glass that is joined to the upper surface of the base via a sealing material and seals the recess, wherein the sealing material has an elastic modulus of 5;
It is formed of an organic resin of GPa or less, and a moisture-proof material is provided in a region of the concave portion from which the lead terminal extends.
【0010】また本発明の固体撮像装置は、前記基体が
ポリフェニレンサルファイドまたは熱溶融型の液晶ポリ
マーで形成されていることを特徴とするものである。The solid-state imaging device according to the present invention is characterized in that the substrate is formed of polyphenylene sulfide or a liquid crystal polymer of a hot-melt type.
【0011】更に本発明の固体撮像装置は、前記封止材
がエポキシ樹脂にアクリルゴムの粒子を5〜50重量%
含有させて形成されていることを特徴とするものであ
る。Further, in the solid-state imaging device according to the present invention, the encapsulating material may contain 5 to 50% by weight of acrylic resin particles in an epoxy resin.
It is characterized by being formed to contain.
【0012】また更に本発明の固体撮像装置は、前記防
湿材がエポキシ樹脂にシリカ粉末を10〜80重量%含
有させて形成されていることを特徴とするものである。Still further, in the solid-state imaging device according to the present invention, the moisture-proof material is formed by adding 10 to 80% by weight of silica powder to epoxy resin.
【0013】本発明の固体撮像装置によれば、固体撮像
素子収納用パッケージの基体を硬化時間が短い熱可塑性
樹脂で形成したことから基体をインジェクションモール
ド法(射出成形法)により成形する際、熱可塑性樹脂の
一部が樹脂成形用金型の合わせ部に侵入して内外表面に
バリが形成されることはなく、その結果、前記バリに起
因した外観不良の発生が有効に防止できるとともにリー
ド端子の内端部がバリで被覆されることはなく、リード
端子に半導体素子の各電極に接続されているボンディン
グワイヤを確実、強固に接続させることができる。According to the solid-state imaging device of the present invention, the base of the package for housing the solid-state imaging device is formed of a thermoplastic resin having a short curing time. A part of the plastic resin does not enter the mating portion of the resin molding die to form burrs on the inner and outer surfaces. As a result, appearance defects caused by the burrs can be effectively prevented and lead terminals can be prevented. Is not covered with burrs, and the bonding wires connected to the respective electrodes of the semiconductor element can be securely and firmly connected to the lead terminals.
【0014】また基体の内外表面に外観不良等の原因と
なるバリが形成されないことから該バリを除去するため
の工程も除去されたバリの一部が基体の凹部内に入り込
むこともなく、これによって固体撮像素子に外部の光学
的画像に対応する正確な光電変換を起こさせることがで
きる。Further, since burrs which cause poor appearance and the like are not formed on the inner and outer surfaces of the substrate, a process for removing the burrs is not performed. A part of the removed burrs does not enter into the concave portion of the substrate. As a result, it is possible to cause the solid-state imaging device to perform accurate photoelectric conversion corresponding to an external optical image.
【0015】更に、前記基体をインジェクションモール
ド法によって製作する際、熱可塑性樹脂は金型内におい
て短時間で冷却固化するため基体の量産性が極めて優れ
たものとなり、製品としての固体撮像装置を安価となす
ことができる。Furthermore, when the substrate is manufactured by the injection molding method, the thermoplastic resin is cooled and solidified in a mold in a short time, so that the mass productivity of the substrate is extremely excellent, and the solid-state imaging device as a product is inexpensive. Can be made.
【0016】[0016]
【発明の実施の形態】次に、本発明を添付図面に基づき
詳細に説明する。図1は、本発明の固体撮像装置の一実
施例を示し、1は基体、2は透光性ガラスから成る蓋体
である。この基体1と蓋体2とで固体撮像素子3を収容
するための容器が構成される。Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 shows an embodiment of a solid-state imaging device according to the present invention, in which 1 is a base, and 2 is a lid made of translucent glass. The base 1 and the lid 2 constitute a container for housing the solid-state imaging device 3.
【0017】前記基体1は、その上面中央部に固体撮像
素子を搭載するための凹部1aが形成されており、該凹
部1a底面には固体撮像素子3がエポキシ樹脂等の樹脂
製接着剤を介して接着固定されている。The base 1 has a concave portion 1a for mounting a solid-state image sensor at the center of the upper surface thereof, and the solid-state image sensor 3 is provided on the bottom surface of the concave portion 1a with a resin adhesive such as epoxy resin. It is adhesively fixed.
【0018】前記基体1は、荷重たわみ温度が200℃
以上の熱可塑性樹脂、具体的には、ポリフェニレンサル
ファイドや熱溶融型の液晶ポリマー等で形成されてお
り、従来周知のインジェクションモールド法(射出成形
法)を採用することによって、即ち、2つの割り型を合
わせた樹脂成形用金型の注入口より加熱によって軟化さ
せた熱可塑性樹脂を注入し、しかる後、これを冷却し、
硬化させることによって製作されている。The substrate 1 has a deflection temperature under load of 200 ° C.
It is formed of the above thermoplastic resin, specifically, polyphenylene sulfide, a liquid crystal polymer of a hot-melt type, or the like. Inject the thermoplastic resin softened by heating from the injection port of the resin molding die that has been combined, and then cool it,
It is manufactured by curing.
【0019】なお、前記荷重たわみ温度とはASTM
(American Standerd of Test Method) のD648に規
定に基づいて測定される温度、具体的には幅13mm、
長さ127mm、厚さ3mmの熱可塑性樹脂を試験片と
して準備し、これの中央部に1.82MPaの荷重をか
けた状態で昇温し、試験片が荷重により大きく変形して
しまうときの温度をいう。The deflection temperature under load is defined as ASTM.
(American Standard of Test Method) D648, temperature measured specifically, width 13mm,
A thermoplastic resin having a length of 127 mm and a thickness of 3 mm was prepared as a test piece, and the temperature was raised while a load of 1.82 MPa was applied to the center of the test piece. Say.
【0020】前記インジェクションモールド法(射出成
形法)によって製作された基体1は樹脂成形用金型内に
注入された熱可塑性樹脂の硬化時間が約10〜50秒と
短いことから熱可塑性樹脂の一部が樹脂成形用金型の合
わせ部に侵入して基体1の内外表面にバリが形成され、
該バリに起因した外観不良を発生することも、バリが後
述するリード端子4の内端部を被覆し、リード端子4の
内端部とボンディングワイヤ5との接続を阻害すること
もない。The substrate 1 manufactured by the injection molding method (injection molding method) has a short curing time of about 10 to 50 seconds for the thermoplastic resin injected into the resin molding die. Part enters the mating part of the resin molding die, and burrs are formed on the inner and outer surfaces of the base 1,
The burr does not cause the appearance defect, and the burr does not cover the inner end of the lead terminal 4 described later, and does not hinder the connection between the inner end of the lead terminal 4 and the bonding wire 5.
【0021】また基体1の外表面に外観不良の原因とな
るバリが形成されないことから該バリを除去するための
工程が不要となり、同時に除去したバリの一部が基体1
の凹部1a内に入り込み、後述する凹部1a内に収容さ
れる固体撮像素子3にバリの一部が付着して固体撮像素
子3に正確な光電変換を起こさせることができなくなる
こともない。Further, since no burrs which cause poor appearance are not formed on the outer surface of the base 1, a step for removing the burrs is not required.
Of the solid-state imaging device 3, which will not be able to cause accurate photoelectric conversion in the solid-state imaging device 3.
【0022】更に前記インジェクションモールド法(射
出成形法)によって基体1を製作する場合、熱可塑性樹
脂は金型内において短時間で冷却固化するため基体1の
量産性が極めて優れたものとなる。Further, when the substrate 1 is manufactured by the injection molding method (injection molding method), since the thermoplastic resin is cooled and solidified in a mold in a short time, the mass productivity of the substrate 1 is extremely excellent.
【0023】なお、前記熱可塑性樹脂から成る基体1は
その荷重たわみ温度が200℃未満であると凹部1aの
底面に固体撮像素子3を接着固定させる際や固体撮像素
子3を外部電気回路に接続させる際、或いは固体撮像素
子3が作動した際等において熱が印加されると基体1が
軟化変形して固体撮像装置としての機能を喪失する恐れ
がある。従って、前記基体1は荷重たわみ温度が200
℃以上に特定される。If the deflection temperature under load of the substrate 1 made of the thermoplastic resin is less than 200 ° C., the solid-state image sensor 3 is connected to an external electric circuit when the solid-state image sensor 3 is bonded and fixed to the bottom surface of the concave portion 1a. When heat is applied during the operation or when the solid-state imaging device 3 is operated, the substrate 1 may be softened and deformed, and the function as the solid-state imaging device may be lost. Therefore, the substrate 1 has a deflection temperature under load of 200.
Specified above ° C.
【0024】また前記熱可塑性樹脂から成る基体1はポ
リフェニレンサルファイドや、熱溶融型の液晶ポリマー
で形成しておくと、該ポリフェニレンサルファイドや、
熱溶融型の液晶ポリマーはトランスファーモールド(射
出成形)時の収縮率が小さく、寸法精度を高くすること
ができるとともに機械的強度に優れ、かつ酸やアルカ
リ、或いはアセトンやキシレン、アルコール等の有機溶
剤に対して耐蝕性に優れるという性質を有していること
から好適に使用される。If the substrate 1 made of the thermoplastic resin is formed of polyphenylene sulfide or a liquid crystal polymer of a heat melting type, the polyphenylene sulfide,
The hot-melt type liquid crystal polymer has a small shrinkage ratio during transfer molding (injection molding), can improve dimensional accuracy, is excellent in mechanical strength, and is an acid, an alkali, or an organic solvent such as acetone, xylene, or alcohol. It is preferably used because it has a property of being excellent in corrosion resistance.
【0025】更に、前記基体1として熱溶融型の液晶ポ
リマーを使用する場合、芳香族ジカルボン酸、芳香族ジ
オール、ヒドロキシ芳香族カルボン酸等から適宜選択さ
れるモノマーを組合せ、これらをエステル化反応で重合
させることによって得られるポリマーからなるポリエス
テル系の液晶モノマーが好適に使用される。Further, when a heat-melting liquid crystal polymer is used as the substrate 1, a monomer appropriately selected from aromatic dicarboxylic acids, aromatic diols, hydroxyaromatic carboxylic acids and the like is combined, and these are subjected to an esterification reaction. A polyester liquid crystal monomer composed of a polymer obtained by polymerization is preferably used.
【0026】前記上面に固体撮像素子2が収容される凹
部1aを有する基体1は、その凹部1aの内側から外側
にかけて導出する複数個のリード端子4が取着されてい
る。A plurality of lead terminals 4 extending from the inside to the outside of the recess 1a are attached to the base 1 having a recess 1a for accommodating the solid-state imaging device 2 on the upper surface.
【0027】前記リード端子4は固体撮像素子3の各電
極を所定の外部電気回路に電気的接続させる作用をな
し、リード端子4の凹部1a内側に露出する領域には固
体撮像素子3の各電極がボンデイングワイヤー5を介し
て電気的に接続され、また凹部1aの外側に導出する領
域は外部電気回路に半田等を介して電気的に接続され
る。The lead terminals 4 serve to electrically connect the respective electrodes of the solid-state image sensor 3 to a predetermined external electric circuit. Are electrically connected via a bonding wire 5, and a region led out of the concave portion 1a is electrically connected to an external electric circuit via solder or the like.
【0028】前記リード端子4は例えば、鉄−ニッケル
ーコバルト合金や鉄ーニッケル合金等の金属材料から成
り、鉄ーニッケルーコバルト合金等から成るインゴット
(塊)に適当な圧延加工や打ち抜き加工等を施すことに
よって所定の形状に形成される。The lead terminal 4 is made of, for example, a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy, and is subjected to a suitable rolling process or punching process on an ingot made of an iron-nickel-cobalt alloy or the like. By applying, it is formed in a predetermined shape.
【0029】また前記リード端子4は、熱可塑性樹脂を
樹脂成形用金型内に注入して基体1を製作する際、樹脂
成形用金型の所定位置に予めリード端子4をセットして
おくことによって基体1の所定位置で凹部1aの内側か
ら外側にかけて導出するように取着される。When the lead terminal 4 is manufactured by injecting a thermoplastic resin into a resin molding die to manufacture the base 1, the lead terminal 4 is set at a predetermined position of the resin molding die in advance. At the predetermined position of the base 1, it is attached so as to be drawn out from the inside to the outside of the concave portion 1 a.
【0030】前記リード端子4が取着されている基体1
は更に凹部1aの内側でリード端子4が導出する領域に
防湿材6が配設されている。The base 1 to which the lead terminals 4 are attached
Further, a moisture-proof material 6 is disposed in a region where the lead terminal 4 extends inside the concave portion 1a.
【0031】前記防湿材6は大気中の水分が基体1とリ
ード端子4との接合界面を介して凹部1a内に入り込も
うとするのを有効に防止する作用をなし、例えば、エポ
キシ樹脂に吸湿材としてのシリカ粉末を含有させて形成
されており、シリカ粉末に基体1とリード端子4との接
合界面を介して凹部1a内に入り込もうとする水分を吸
着させるようになっている。The moisture-proof material 6 has a function of effectively preventing moisture in the atmosphere from entering the recess 1a through the joint interface between the base 1 and the lead terminal 4. For example, the moisture-absorbing material may be added to the epoxy resin. Is formed so as to adsorb water that is going to enter the recess 1a through the bonding interface between the base 1 and the lead terminal 4 to the silica powder.
【0032】前記防湿材6は、例えば、吸湿材としての
シリカ粉末を含するエポキシ樹脂前駆体を凹部1aの内
側でリード端子4が導出する領域に滴下し、しかる後、
これを約150℃の温度で熱処理し、エポキシ樹脂前駆
体を熱硬化させることによって凹部1aの内側でリード
端子4が導出する領域に配設される。The moisture-proof material 6, for example, is obtained by dropping an epoxy resin precursor containing silica powder as a moisture-absorbing material into a region where the lead terminal 4 is led out inside the concave portion 1a.
This is heat-treated at a temperature of about 150 ° C., and the epoxy resin precursor is thermally cured, so that the epoxy resin precursor is disposed inside the recess 1 a in a region from which the lead terminal 4 extends.
【0033】なお、前記防湿材6はエポキシ樹脂に吸湿
材としてのシリカ粉末を含有させて形成する場合、シリ
カ粉末の含有量が10重量%未満であると大気中に含ま
れる水分が基体1とリード端子4との接合界面を介して
凹部1a内に入り込もうとするのを有効に防止すること
ができず、また80重量%を超えると防湿材6のチクソ
トロピー性が強くなりすぎて流動性がなくなり、防湿材
6を凹部1aの内側でリード端子4が導出する領域に適
切に配設することが困難となってしまう。従って、前記
防湿材6をエポキシ樹脂に吸湿材としてのシリカ粉末を
含有させて形成する場合、シリカ粉末の含有量を10〜
80重量%の範囲としておくことが好ましい。When the moisture-proof material 6 is formed by adding silica powder as a moisture-absorbing material to an epoxy resin, if the content of the silica powder is less than 10% by weight, the moisture contained in the atmosphere will be reduced to the substrate 1 It is not possible to effectively prevent an attempt to enter the recess 1a through the bonding interface with the lead terminal 4, and if it exceeds 80% by weight, the thixotropy of the moisture-proof material 6 becomes too strong and the fluidity is lost. In addition, it is difficult to appropriately dispose the moisture proof material 6 in the region where the lead terminal 4 is led out inside the concave portion 1a. Therefore, when the moisture-proof material 6 is formed by adding silica powder as a moisture-absorbing material to an epoxy resin, the content of the silica powder is 10 to 10.
It is preferable to set it in the range of 80% by weight.
【0034】更に前記リード端子4が取着された基体1
は、その上面に透光性ガラスから成る蓋体2が封止材7
を介して取着され、蓋体2で基体1の凹部1aを塞ぐこ
とによって基体1と蓋体2とから成る容器内部に固体撮
像素子3を気密に収容される。Further, the base 1 on which the lead terminals 4 are attached
The lid 2 made of translucent glass is provided on the upper surface with a sealing material 7.
The solid-state imaging device 3 is hermetically accommodated in a container including the base 1 and the lid 2 by closing the recess 1 a of the base 1 with the lid 2.
【0035】前記蓋体2は、例えば、ホウケイ酸ガラス
やソーダガラス等の透光性ガラスから成り、該蓋体2は
基体1の凹部1aを気密に塞ぐとともに外部の光学的画
像を凹部1a内に透過させて固体撮像素子3に照射結像
させるための窓部材として作用する。The cover 2 is made of, for example, a light-transmitting glass such as borosilicate glass or soda glass. The cover 2 hermetically closes the concave portion 1a of the base 1 and also allows an external optical image to be formed in the concave portion 1a. And functions as a window member for irradiating and imaging the solid-state imaging device 3.
【0036】また前記蓋体2を基体1に取着する封止材
7としては、弾性率が5GPa以下の有機樹脂、具体的
には例えば、エポキシ樹脂にアクリルゴムの粒子を含有
させたものが使用され、エポキシ樹脂前駆体にアクリル
ゴムの粒子を含有させたものを基体1と蓋体2との間に
配し、しかる後、これを約150℃の温度で熱処理し、
エポキシ樹脂前駆体を熱硬化させることによって基体1
と蓋体2とは封止材7を介して接合される。The sealing material 7 for attaching the lid 2 to the base 1 is an organic resin having an elastic modulus of 5 GPa or less, for example, an epoxy resin containing acrylic rubber particles. The epoxy resin precursor containing acrylic rubber particles is disposed between the base 1 and the lid 2 and then heat-treated at a temperature of about 150 ° C.
Substrate 1 by thermosetting epoxy resin precursor
And the lid 2 are joined via a sealing material 7.
【0037】前記封止材7をアクリルゴムの粒子を含有
するエポキシ樹脂で形成するのは封止材7の硬度を低く
して弾性力を高め、これによって基体1と蓋体2との熱
膨張係数の相違に起因して発生する応力を吸収し得るよ
うにするためであり、アクリルゴムの粒子を含有するエ
ポキシ樹脂で封止材7を形成しておくと基体1が熱可塑
性樹脂で、蓋体2がホウケイ酸ガラスやソーダガラス等
の透光性ガラスで形成され、両者間に両者の熱膨張係数
の差に起因して応力が発生してもその応力は封止材7を
変形させることによって吸収され、その結果、基体1と
蓋体2とは封止材7を介して確実に接合されることとな
り、基体1と蓋体2とから成る容器4の内部を常に気密
に封止しておくことが可能となる。When the sealing material 7 is formed of an epoxy resin containing particles of acrylic rubber, the hardness of the sealing material 7 is reduced and the elastic force is increased, whereby the thermal expansion of the base 1 and the lid 2 is achieved. This is because it is possible to absorb the stress generated due to the difference in the coefficient. If the sealing material 7 is formed of an epoxy resin containing particles of acrylic rubber, the base 1 is made of a thermoplastic resin, The body 2 is formed of a translucent glass such as borosilicate glass or soda glass, and even if stress is generated between the two due to a difference in the coefficient of thermal expansion between the two, the stress will deform the sealing material 7. As a result, the base 1 and the lid 2 are securely joined to each other via the sealing material 7, and the inside of the container 4 including the base 1 and the lid 2 is always airtightly sealed. It is possible to keep.
【0038】なお、前記封止材7はその弾性率が5GP
aを超えると、封止材7が硬くなりすぎて基体1と蓋体
2との間に発生する応力を良好に吸収することができな
くなる。従って、前記封止材7はその弾性率が5GPa
以下に特定される。The sealing material 7 has an elastic modulus of 5 GP.
If it exceeds a, the sealing material 7 becomes too hard, and it becomes impossible to favorably absorb the stress generated between the base 1 and the lid 2. Therefore, the sealing material 7 has an elastic modulus of 5 GPa.
It is specified below.
【0039】また、前記封止材7をアクリルゴムの粒子
を含有するエポキシ樹脂で形成する場合、アクリルゴム
の粒子の量が5重量%未満となると封止材7の弾性率が
5GPaを超えた硬度の高いものとなって基体1と蓋体
2との間に発生する応力を良好に吸収することができ
ず、また50重量%を超えると封止材7の流動性が大き
く低下し、封止材7を基体1と蓋体2との間に均一に介
在させることが困難となって容器の気密封止の信頼性が
低くなってしまう危険性がある。従って、前記封止材7
はアクリルゴムの粒子を含有するエポキシ樹脂で形成す
る場合、アクリルゴムの粒子の量を5〜50重量%の範
囲としておくことが好ましい。When the sealing material 7 is formed of an epoxy resin containing acrylic rubber particles, the elastic modulus of the sealing material 7 exceeds 5 GPa when the amount of the acrylic rubber particles is less than 5% by weight. Since the hardness becomes high, the stress generated between the base 1 and the lid 2 cannot be favorably absorbed, and if it exceeds 50% by weight, the fluidity of the sealing material 7 is greatly reduced, There is a risk that it is difficult to uniformly interpose the stopper 7 between the base 1 and the lid 2, and the reliability of hermetic sealing of the container may be reduced. Therefore, the sealing material 7
Is formed of an epoxy resin containing acrylic rubber particles, the amount of the acrylic rubber particles is preferably set in the range of 5 to 50% by weight.
【0040】更に前記封止材7をアクリルゴムの粒子を
含有するエポキシ樹脂で形成する場合、アクリルゴムの
粒子の粒径が0.1μmとなるとアクリルゴムの粒子が
凝集して封止材7中に均一分散させることができなくな
り、その結果、封止材7の硬度が高くなって基体1と蓋
体2との間に発生する応力を良好に吸収することができ
なくなり、また2μmを超えると封止材7で基体1と蓋
体2とを接合する際、封止材7の厚みが不要に厚くなっ
て水分等が侵入しやすくなってしまう。従って、前記封
止材7をアクリルゴムの粒子を含有するエポキシ樹脂で
形成する場合、アクリルゴムの粒子の粒径は0.1〜2
μmの範囲としておくことが好ましい。Further, when the sealing material 7 is formed of an epoxy resin containing particles of acrylic rubber, when the particle size of the acrylic rubber particles becomes 0.1 μm, the particles of the acrylic rubber aggregate to form In this case, the hardness of the sealing material 7 becomes high, so that the stress generated between the base 1 and the lid 2 cannot be favorably absorbed. When joining the base 1 and the lid 2 with the sealing material 7, the thickness of the sealing material 7 becomes unnecessarily large, and moisture and the like easily enter. Therefore, when the sealing material 7 is formed of an epoxy resin containing acrylic rubber particles, the particle size of the acrylic rubber particles is 0.1 to 2
It is preferable to keep the range of μm.
【0041】かくして前記基体1の凹部1a底面に固体
撮像素子3をエポキシ樹脂等の樹脂から成る接着剤で接
着固定するととに該固体撮像素子3の各電極をボンデイ
ングワイヤ6を介してリード端子4に電気的に接続し、
しかる後、基体1の上面に透光性ガラスから成る蓋体2
を封止材7を介して接合させ、基体1と蓋体2とから成
る容器内部に固体撮像素子3を気密に収容することによ
って製品としての固体撮像装置となる。Thus, the solid-state imaging device 3 is bonded and fixed to the bottom surface of the concave portion 1a of the base 1 with an adhesive made of a resin such as epoxy resin, and each electrode of the solid-state imaging device 3 is connected to the lead terminal 4 via the bonding wire 6. Electrically connected to
Thereafter, a cover 2 made of translucent glass is provided on the upper surface of the base 1.
Are joined via a sealing material 7, and the solid-state imaging device 3 is hermetically accommodated in a container formed of the base 1 and the lid 2, thereby forming a solid-state imaging device as a product.
【0042】かかる固体撮像装置は固体撮像素子収納用
パッケージの外部に突出した複数のリード端子4を所定
の外部電気回路に接続させ、内部に収容する固体撮像素
子3の各電極を外部電気回路に接続するとともに光学的
画像を蓋体2を介して固体撮像素子3に照射結像させ、
固体撮像素子3に光電変換を起こさせることによってビ
デオカメラ等の撮像装置として機能する。In such a solid-state imaging device, a plurality of lead terminals 4 protruding outside the package for accommodating the solid-state imaging device are connected to a predetermined external electric circuit, and each electrode of the solid-state imaging device 3 housed inside is connected to the external electric circuit. Connected and irradiates and forms an optical image on the solid-state imaging device 3 through the lid 2,
By causing the solid-state imaging device 3 to perform photoelectric conversion, it functions as an imaging device such as a video camera.
【0043】なお、本発明は上述の実施例に限定される
ものではなく、本発明の要旨を逸脱しない範囲であれば
種々の変更は可能である。The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention.
【0044】[0044]
【発明の効果】本発明の固体撮像装置によれば、固体撮
像素子収納用パッケージの基体を硬化時間が短い熱可塑
性樹脂で形成したことから基体をインジェクションモー
ルド法(射出成形法)により成形する際、熱可塑性樹脂
の一部が樹脂成形用金型の合わせ部に侵入して内外表面
にバリが形成されることはなく、その結果、前記バリに
起因した外観不良の発生が有効に防止できるとともにリ
ード端子の内端部がバリで被覆されることはなく、リー
ド端子に半導体素子の各電極に接続されているボンディ
ングワイヤを確実、強固に接続させることができる。According to the solid-state imaging device of the present invention, since the base of the package for storing the solid-state imaging device is formed of a thermoplastic resin having a short curing time, the base is formed by injection molding (injection molding). In addition, a part of the thermoplastic resin does not enter the mating portion of the resin molding die and burrs are not formed on the inner and outer surfaces, and as a result, the appearance defect caused by the burrs can be effectively prevented and The inner end of the lead terminal is not covered with burrs, and the bonding wire connected to each electrode of the semiconductor element can be securely and firmly connected to the lead terminal.
【0045】また基体の内外表面に外観不良等の原因と
なるバリが形成されないことから該バリを除去するため
の工程も除去されたバリの一部が基体の凹部内に入り込
むこともなく、これによって固体撮像素子に外部の光学
的画像に対応する正確な光電変換を起こさせることがで
きる。Further, since no burrs which cause poor appearance or the like are formed on the inner and outer surfaces of the substrate, a step for removing the burrs is not performed. A part of the removed burrs does not enter into the concave portion of the substrate. As a result, it is possible to cause the solid-state imaging device to perform accurate photoelectric conversion corresponding to an external optical image.
【0046】更に、前記基体をインジェクションモール
ド法によって製作する際、熱可塑性樹脂は金型内におい
て短時間で冷却固化するため基体の量産性が極めて優れ
たものとなり、製品としての固体撮像装置を安価となす
ことができる。Further, when the substrate is manufactured by the injection molding method, the thermoplastic resin is cooled and solidified in a mold in a short time, so that the mass productivity of the substrate is extremely excellent, and the solid-state imaging device as a product is inexpensive. Can be made.
【図1】本発明の固体撮像装置の一実施例を示す断面図
である。FIG. 1 is a sectional view showing an embodiment of a solid-state imaging device according to the present invention.
1・・・・・・・・・基体 2・・・・・・・・・蓋体 3・・・・・・・・・固体撮像素子 4・・・・・・・・・リード端子 6・・・・・・・・・防湿材 7・・・・・・・・・封止材 DESCRIPTION OF SYMBOLS 1 ... Base 2 ... Lid 3 ... Solid-state imaging device 4 ... Lead terminal 6 ... ·····················································
Claims (4)
を有し、荷重たわみ温度が200℃以上の熱可塑性樹脂
から成り、射出成形で形成された基体と、前記凹部の内
側から外側にかけて導出された複数個のリード端子と、
前記基体の凹部内に収容された固体撮像素子と、前記基
体の上面に封止材を介して接合され、前記凹部を塞ぐ透
光性ガラスから成る蓋体とから成り、前記封止材は弾性
率が5GPa以下の有機樹脂で形成されており、かつ前
記凹部内のリード端子が導出する領域に防湿材が配設さ
れていることを特徴とする固体撮像装置。1. A base made of a thermoplastic resin having a deflection temperature under load of 200 ° C. or more and having a concave portion for accommodating a solid-state imaging device on an upper surface, and a base formed by injection molding, and from inside to outside of the concave portion. A plurality of lead terminals derived,
The solid-state imaging device housed in the concave portion of the base, and a lid made of translucent glass that is joined to the upper surface of the base via a sealing material and seals the concave portion, wherein the sealing material is elastic. A solid-state imaging device, which is formed of an organic resin having a rate of 5 GPa or less, and wherein a moisture-proof material is provided in a region of the recess from which a lead terminal extends.
たは熱溶融型の液晶ポリマーで形成されていることを特
徴とする請求項1に記載の固体撮像装置。2. The solid-state imaging device according to claim 1, wherein said substrate is formed of polyphenylene sulfide or a liquid crystal polymer of a hot-melt type.
の粒子を5〜50重量%含有させて形成されていること
を特徴とする請求項1に記載の固体撮像装置。3. The solid-state imaging device according to claim 1, wherein the sealing material is formed by adding 5 to 50% by weight of acrylic rubber particles to an epoxy resin.
10〜80重量%含有させて形成されていることを特徴
とする請求項1に記載の固体撮像装置。4. The solid-state imaging device according to claim 1, wherein said moisture-proof material is formed by adding 10 to 80% by weight of silica powder to epoxy resin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34042997A JP3435042B2 (en) | 1997-12-10 | 1997-12-10 | Solid-state imaging device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34042997A JP3435042B2 (en) | 1997-12-10 | 1997-12-10 | Solid-state imaging device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH11177074A true JPH11177074A (en) | 1999-07-02 |
JP3435042B2 JP3435042B2 (en) | 2003-08-11 |
Family
ID=18336883
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP34042997A Expired - Fee Related JP3435042B2 (en) | 1997-12-10 | 1997-12-10 | Solid-state imaging device |
Country Status (1)
Country | Link |
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JP (1) | JP3435042B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7396704B2 (en) | 2005-02-15 | 2008-07-08 | Sumitomo Chemical Company, Limited | Lid made of resin for case for accommodating solid-state imaging device and solid-state imaging apparatus |
JP2011216754A (en) * | 2010-04-01 | 2011-10-27 | Hitachi Automotive Systems Ltd | Power module, and power converter using the same |
-
1997
- 1997-12-10 JP JP34042997A patent/JP3435042B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7396704B2 (en) | 2005-02-15 | 2008-07-08 | Sumitomo Chemical Company, Limited | Lid made of resin for case for accommodating solid-state imaging device and solid-state imaging apparatus |
JP2011216754A (en) * | 2010-04-01 | 2011-10-27 | Hitachi Automotive Systems Ltd | Power module, and power converter using the same |
Also Published As
Publication number | Publication date |
---|---|
JP3435042B2 (en) | 2003-08-11 |
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