JPH11160352A - Apparatus and method for inspection of semiconductor accelerometer - Google Patents
Apparatus and method for inspection of semiconductor accelerometerInfo
- Publication number
- JPH11160352A JPH11160352A JP9323453A JP32345397A JPH11160352A JP H11160352 A JPH11160352 A JP H11160352A JP 9323453 A JP9323453 A JP 9323453A JP 32345397 A JP32345397 A JP 32345397A JP H11160352 A JPH11160352 A JP H11160352A
- Authority
- JP
- Japan
- Prior art keywords
- acceleration sensor
- semiconductor acceleration
- semiconductor
- electrode
- probe card
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 76
- 238000007689 inspection Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 6
- 230000001133 acceleration Effects 0.000 claims abstract description 73
- 239000000523 sample Substances 0.000 claims abstract description 33
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 3
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 9
- 239000011521 glass Substances 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Landscapes
- Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体基板により
形成された重り部に加わる加速度を、梁部に形成された
歪み検出部の抵抗値の変化として検出するようにした半
導体加速度センサの特性を検査するための検査装置及び
その検査方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a characteristic of a semiconductor acceleration sensor which detects acceleration applied to a weight portion formed by a semiconductor substrate as a change in resistance value of a strain detecting portion formed in a beam portion. The present invention relates to an inspection apparatus for inspecting and an inspection method thereof.
【０００２】[0002]
【従来の技術】従来、加速度検出用のセンサとしては、
圧電セラミック、有機薄膜、シリコン単結晶等、様々な
材料を用いた多種多様の加速度センサが開発され、商品
化されている。これらの加速度センサは、ヒステリシ
ス、クリープ、疲労等がなく、また、構造が簡単で、電
圧感度が極めて高い、容易に増幅できる、使い勝手が優
れている等の利点があり、様々な分野で広く用いられて
いる。2. Description of the Related Art Conventionally, as sensors for detecting acceleration,
A wide variety of acceleration sensors using various materials such as piezoelectric ceramics, organic thin films, and silicon single crystals have been developed and commercialized. These acceleration sensors are free from hysteresis, creep, fatigue, etc., and have advantages such as simple structure, extremely high voltage sensitivity, easy amplification, and excellent usability, and are widely used in various fields. Have been.
【０００３】これらの加速度センサの中でも特に、シリ
コン単結晶を用いた半導体加速度センサは、シリコン自
体の格子欠陥が極めて少ないために理想的な弾性体とな
ることと、半導体プロセス技術をそのまま転用すること
ができることから、特に、近年注目されている。[0003] Among these acceleration sensors, a semiconductor acceleration sensor using a silicon single crystal is an ideal elastic body because of very few lattice defects of silicon itself. In particular, in recent years, it has attracted attention.
【０００４】この半導体加速度センサの製造方法の一例
を図３に示す。まず、図３（ａ）に示すように、半導体
基板１の表面側に、イオン注入や熱拡散により、歪み検
出部としてのピエゾ抵抗２により構成されたブリッジ回
路を形成し、半導体基板１の裏面側を異方性エッチング
することにより薄膜部３を形成する。次に、図３（ｂ）
に示すように、半導体基板１の表面側に電極４や配線５
等を形成した後、ＲＩＥ等により空隙部７を形成するこ
とにより重り部８が形成される。さらに、図３（ｃ）に
示すように、半導体基板１の両面側からガラス製等の台
座６、９を陽極接合等により接合する。なお、図４は、
半導体加速度センサの台座６，９等を省略した状態を示
す外観図である。FIG. 3 shows an example of a method for manufacturing the semiconductor acceleration sensor. First, as shown in FIG. 3A, a bridge circuit composed of a piezoresistor 2 as a strain detection unit is formed on the front side of the semiconductor substrate 1 by ion implantation or thermal diffusion. The thin film portion 3 is formed by anisotropically etching the side. Next, FIG.
As shown in FIG.
After the formation, the weight 8 is formed by forming the void 7 by RIE or the like. Further, as shown in FIG. 3C, pedestals 6 and 9 made of glass or the like are bonded from both sides of the semiconductor substrate 1 by anodic bonding or the like. In addition, FIG.
FIG. 4 is an external view showing a state where the pedestals 6, 9 and the like of the semiconductor acceleration sensor are omitted.
【０００５】ここで、重り部８は、薄膜部３の残った部
分により周囲の支持部１０と接続されており、この残っ
た部分が梁部１１となる。つまり、重り部８は梁部１１
の弾性により支持部１０に支えられているのである。そ
して、梁部１１にはピエゾ抵抗２が形成されており、重
り部８に加えられた加速度は、梁部１１の歪みとなり、
ピエゾ抵抗２の抵抗値の変化として検出されるのであ
る。Here, the weight 8 is connected to the surrounding support 10 by the remaining portion of the thin film portion 3, and the remaining portion becomes the beam 11. That is, the weight 8 is the beam 11
Is supported by the support portion 10 by the elasticity of the support member 10. The piezoresistor 2 is formed in the beam 11, and the acceleration applied to the weight 8 causes the beam 11 to be distorted,
This is detected as a change in the resistance value of the piezo resistor 2.
【０００６】通常、半導体素子の場合、パッケージに組
み込む前にウエハの状態で特性の検査が行われる。プロ
ーブ検査装置を用い、ウエハステージにウエハを自動搬
送し、ボンディングパッドへプロービングすることによ
り、電気的特性の計測を行い、不良のチップにマーキン
グを行うのである。Normally, in the case of a semiconductor device, a characteristic inspection is performed in a state of a wafer before being incorporated in a package. Using a probe inspection device, a wafer is automatically transferred to a wafer stage, and probing is performed on a bonding pad, thereby measuring electrical characteristics and marking a defective chip.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、上述の
ような半導体加速度センサでは、ウエハの状態でプロー
ビングにより特性を検査する場合、半導体基板１の下面
の台座６がなく、ウエハステージの上面と同一面に水平
にウエハがセットされるので、ウエハに形成されている
半導体加速度センサの重り部８に加速度が加わり、加速
度がかかっていない状態での特性の計測ができないとい
う問題があった。However, in the above-described semiconductor acceleration sensor, when the characteristics are inspected by probing in the state of the wafer, the pedestal 6 on the lower surface of the semiconductor substrate 1 is not provided, and the same surface as the upper surface of the wafer stage is used. Since the wafer is set horizontally on the wafer, acceleration is applied to the weight portion 8 of the semiconductor acceleration sensor formed on the wafer, and there is a problem that the characteristics cannot be measured in a state where no acceleration is applied.
【０００８】本発明は、上記の点に鑑みてなしたもので
あり、その目的とするところは、重り部に加速度が加わ
らず、梁部に応力がかからない状態での特性検査の行え
る半導体加速度センサの検査装置及びその検査方法を提
供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and an object of the present invention is to provide a semiconductor acceleration sensor capable of performing a characteristic test in a state in which acceleration is not applied to a weight portion and stress is not applied to a beam portion. An inspection apparatus and an inspection method thereof are provided.
【０００９】[0009]
【課題を解決するための手段】請求項１記載の発明は、
半導体基板により、外周をなす支持部と重り部と両者を
接続する梁部とを形成し、前記梁部には、重り部に加わ
る加速度により抵抗値の変化する歪み検出部が形成され
てなる半導体加速度センサの特性を検査するための検査
装置であって、前記半導体加速度センサを乗せるウエハ
ステージの上面に、半導体加速度センサの電極と対向す
る位置に電極を形成するとともに、前記重り部を水平に
保つための支持突起を形成したプロ−ブカードを備えた
ことを特徴とするものである。According to the first aspect of the present invention,
A semiconductor comprising a semiconductor substrate, a supporting portion forming an outer periphery, a weight portion, and a beam portion connecting the both, and the beam portion is formed with a strain detecting portion having a resistance value that changes by an acceleration applied to the weight portion. An inspection device for inspecting characteristics of an acceleration sensor, wherein an electrode is formed on a top surface of a wafer stage on which the semiconductor acceleration sensor is mounted, at a position facing an electrode of the semiconductor acceleration sensor, and the weight portion is kept horizontal. And a probe card having a support projection formed thereon.
【００１０】請求項２記載の発明は、請求項１記載の半
導体加速度センサの検査装置において、前記プロ−ブカ
ードの前記半導体加速度センサの周辺部と対向する位置
に貫通孔を設けたことを特徴とするものである。According to a second aspect of the present invention, in the inspection apparatus for a semiconductor acceleration sensor according to the first aspect, a through hole is provided at a position of the probe card facing a peripheral portion of the semiconductor acceleration sensor. Is what you do.
【００１１】請求項３記載の発明は、請求項１又は請求
項２記載の半導体加速度センサの特性検査装置を用い、
前記ウエハステージに備えたプロ−ブカード上に、半導
体加速度センサの電極形成面を下にして、半導体加速度
センサの電極と前記プロ−ブカードの電極とが対向する
ようにして設置し、前記貫通孔を介して減圧することに
より、プロ−ブカードに半導体加速度センサを吸着した
状態で検査を行うようにしたことを特徴とするものであ
る。According to a third aspect of the present invention, there is provided the semiconductor acceleration sensor characteristic inspection apparatus according to the first or second aspect,
The electrode of the semiconductor acceleration sensor and the electrode of the probe card are placed on the probe card provided on the wafer stage with the electrode forming surface of the semiconductor acceleration sensor facing down, and the through hole is formed. The inspection is performed in a state where the semiconductor acceleration sensor is attracted to the probe card by reducing the pressure through the probe card.
【００１２】[0012]
【発明の実施の形態】以下、本発明の実施の形態の一例
を図面に基づき説明する。図１は、本発明の実施の形態
の一例に係るプローブカードの模式図であり、（ａ）は
全体を示し、（ｂ）は（ａ）における中央部を拡大した
図を示す。図２は、半導体加速度センサをプローブカー
ド１２を設置したウエハステージ２０に乗せた状態の断
面を示す模式図である。本実施形態に係る半導体加速度
センサは、従来例として説明した図３、図４のものと同
等であるので、同一個所には同一符号を付して説明を省
略する。本実施形態に係る半導体加速度センサは、図
３、図４で示した半導体加速度センサにおいて、半導体
基板１の上面側の台座９を設置する前のウエハ状態のも
のを示している。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIGS. 1A and 1B are schematic views of a probe card according to an example of an embodiment of the present invention. FIG. 1A shows the entirety, and FIG. 1B shows an enlarged view of a central portion in FIG. FIG. 2 is a schematic diagram showing a cross section in a state where the semiconductor acceleration sensor is mounted on the wafer stage 20 on which the probe card 12 is installed. Since the semiconductor acceleration sensor according to the present embodiment is the same as those shown in FIGS. 3 and 4 described as a conventional example, the same portions are denoted by the same reference numerals and description thereof will be omitted. The semiconductor acceleration sensor according to the present embodiment is a semiconductor acceleration sensor shown in FIGS. 3 and 4 in a wafer state before the pedestal 9 on the upper surface side of the semiconductor substrate 1 is installed.
【００１３】本実施形態の半導体加速度センサの検査装
置に係るプローブカード１２は、図１に示すように、半
導体加速度センサウエハと同等以上の大きさのガラスエ
ポキシ板１３に銅配線１４が形成されており、銅配線１
４の一端にはガラスエポキシ板１３の中央付近に電極１
５が形成され、他端はガラスエポキシ板１３の外周部で
フレキシブルプリント配線１６に接続されている。電極
１５は金バンプによって形成されており、半導体加速度
センサをセットしたときに、半導体加速度センサの電極
４と接触する位置に配置されている。電極１５の高さは
十数μｍから百数十μｍである。また、半導体加速度セ
ンサの重り部８と対向する位置を含む所定個所には、重
り部８を水平に保持するための支持突起１７が金バンプ
によって形成されている。さらには、ガラスエポキシ板
１３の周縁部には貫通孔１８が形成されており、半導体
加速度センサを検査装置にセットする際に、貫通孔１８
を介して減圧することにより、半導体加速度センサを検
査装置のプローブカード１２に吸着固定されるようにす
るのである。なお、支持突起１７の内、貫通孔１８の上
部に対応する位置に形成されるものには、貫通孔１８に
通じる貫通孔１７ａが形成される。As shown in FIG. 1, a probe card 12 according to the semiconductor acceleration sensor inspection apparatus of the present embodiment has a copper wiring 14 formed on a glass epoxy plate 13 having a size equal to or larger than that of a semiconductor acceleration sensor wafer. , Copper wiring 1
4 has an electrode 1 near the center of the glass epoxy plate 13.
5 is formed, and the other end is connected to the flexible printed wiring 16 at the outer peripheral portion of the glass epoxy plate 13. The electrode 15 is formed by a gold bump, and is arranged at a position where the electrode 15 contacts the electrode 4 of the semiconductor acceleration sensor when the semiconductor acceleration sensor is set. The height of the electrode 15 is in the range of more than 10 μm to more than 100 μm. Further, at a predetermined position including a position facing the weight portion 8 of the semiconductor acceleration sensor, a support protrusion 17 for holding the weight portion 8 horizontally is formed by a gold bump. Further, a through hole 18 is formed in a peripheral portion of the glass epoxy plate 13, and when the semiconductor acceleration sensor is set in the inspection apparatus, the through hole 18 is formed.
Then, the semiconductor acceleration sensor is suction-fixed to the probe card 12 of the inspection device by reducing the pressure through the pressure sensor. In addition, among the support protrusions 17, those formed at positions corresponding to the upper portions of the through holes 18 are formed with through holes 17 a communicating with the through holes 18.
【００１４】本実施形態の半導体加速度センサの検査装
置により特性検査を行う場合、図２に示すように、ウエ
ハステージ２０上に備えたプロ−ブカード１２上に、半
導体加速度センサをその電極４形成面を下にして、半導
体加速度センサの電極４とプロ−ブカード１２のバンプ
による電極１５とが接触するようにして設置した状態に
て、ピエゾ抵抗やオフセット電圧等の電気的特性の計測
を行う。ここで、貫通孔１８を介して減圧することによ
り、プロ−ブカードに半導体加速度センサを吸着固定し
た状態で検査を行うことができる。When a characteristic inspection is performed by the semiconductor acceleration sensor inspection apparatus according to the present embodiment, as shown in FIG. 2, a semiconductor acceleration sensor is mounted on a probe card 12 provided on a wafer stage 20 with its electrode 4 formed on its surface. The electric characteristics such as the piezo resistance and the offset voltage are measured in a state where the electrodes 4 of the semiconductor acceleration sensor and the electrodes 15 formed by the bumps of the probe card 12 are in contact with each other. Here, by reducing the pressure through the through-hole 18, the inspection can be performed in a state where the semiconductor acceleration sensor is suction-fixed to the probe card.
【００１５】本実施形態によれば、半導体加速度センサ
の重り部８が支持突起１７により水平に支持された状態
で特性の計測が行えるので、重り部８に加速度が加わら
ない状態、つまり、梁部１１に応力がかからない状態で
の特性検査が可能となる。また、貫通孔１８を介して減
圧することにより、プロ−ブカード１２に半導体加速度
センサを吸着した状態で検査を行うようにすれば、プロ
−ブカード１２への半導体加速度センサの固定が容易に
なる。According to the present embodiment, the characteristics can be measured in a state where the weight 8 of the semiconductor acceleration sensor is horizontally supported by the support projections 17, so that no acceleration is applied to the weight 8, that is, the beam portion. It is possible to perform a characteristic inspection in a state where no stress is applied to 11. Further, if the pressure is reduced through the through hole 18 and the inspection is performed in a state where the semiconductor acceleration sensor is attracted to the probe card 12, the semiconductor acceleration sensor can be easily fixed to the probe card 12.
【００１６】[0016]
【発明の効果】以上のように、請求項１乃至請求項３記
載の発明によれば、半導体基板により、外周をなす支持
部と重り部と両者を接続する梁部とを形成し、前記梁部
には、重り部に加わる加速度により抵抗値の変化する歪
み検出部が形成されてなる半導体加速度センサの特性を
検査するための検査装置において、前記半導体加速度セ
ンサを乗せるウエハステージの上面に、半導体加速度セ
ンサの電極と対向する位置に電極を形成するとともに、
前記重り部を水平に保つための支持突起を形成したプロ
−ブカードを備え、前記ウエハステージに備えたプロ−
ブカード上に、半導体加速度センサの電極形成面を下に
して、半導体加速度センサの電極と前記プロ−ブカード
の電極とが対向するようにして設置した状態で特性の検
査を行うことにより、半導体加速度センサの重り部が支
持突起により水平に支持された状態で特性の計測が行え
るので、重り部に加速度が加わらない状態、つまり、梁
部に応力がかからない状態での特性検査が可能となる。
さらに、前記プロ−ブカードの前記半導体加速度センサ
の周辺部と対向する位置に貫通孔を設け、前記貫通孔を
介して減圧することにより、プロ−ブカードに半導体加
速度センサを吸着した状態で検査を行うようにすれば、
プロ−ブカードへの半導体加速度センサの固定が容易に
なる。As described above, according to the first to third aspects of the present invention, the support portion and the weight portion forming the outer periphery and the beam portion connecting the both are formed by the semiconductor substrate. In the inspection device for inspecting the characteristics of the semiconductor acceleration sensor, which is formed with a strain detection unit in which the resistance value changes by the acceleration applied to the weight unit, the semiconductor device is mounted on the upper surface of a wafer stage on which the semiconductor acceleration sensor is mounted. While forming an electrode at the position facing the electrode of the acceleration sensor,
A probe card provided with a support protrusion for keeping the weight portion horizontal; and a probe card provided on the wafer stage.
The characteristics of the semiconductor acceleration sensor are measured by setting the electrodes of the semiconductor acceleration sensor on the card with the electrodes of the semiconductor acceleration sensor facing down and the electrodes of the probe card facing each other. Since the characteristics can be measured in a state where the weight portion is horizontally supported by the support protrusion, the characteristic inspection can be performed in a state where no acceleration is applied to the weight portion, that is, in a state where no stress is applied to the beam portion.
Further, a through hole is provided at a position of the probe card facing the peripheral portion of the semiconductor acceleration sensor, and the pressure is reduced through the through hole to perform an inspection in a state where the semiconductor acceleration sensor is attracted to the probe card. By doing so,
It becomes easy to fix the semiconductor acceleration sensor to the probe card.
【図１】本発明の一実施形態に係る検査装置のプロ−ブ
カードを示す模式図である。FIG. 1 is a schematic diagram showing a probe card of an inspection device according to an embodiment of the present invention.
【図２】同上のプロ−ブカードに半導体加速度センサを
セットした状態の断面を示す模式図である。FIG. 2 is a schematic diagram showing a cross section in a state where a semiconductor acceleration sensor is set on the probe card according to the first embodiment.
【図３】半導体加速度センサの製造工程を示す模式図で
ある。FIG. 3 is a schematic view illustrating a manufacturing process of the semiconductor acceleration sensor.
【図４】半導体加速度センサの外観の概略を示す模式図
である。FIG. 4 is a schematic diagram showing an outline of the appearance of a semiconductor acceleration sensor.
１ 半導体基板 ２ ピエゾ抵抗 ４ 電極 ５ 配線 ６ 台座 ７ 空隙部 ８ 重り部 ９ 台座 １０ 支持部 １１ 梁部 １２ プロ−ブカード １３ ガラスエポキシ板 １４ 銅配線 １５ 電極 １６ フレキシブルプリント基板 １７ 支持突起 １７ａ 貫通孔 １８ 貫通孔 ２０ ウエハステージ REFERENCE SIGNS LIST 1 semiconductor substrate 2 piezoresistor 4 electrode 5 wiring 6 pedestal 7 void 8 weight 9 pedestal 10 support 11 beam 12 probe card 13 glass epoxy plate 14 copper wiring 15 electrode 16 flexible printed board 17 support projection 17a through hole 18 Through hole 20 Wafer stage
フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ // Ｇ０１Ｒ 31/28 Ｇ０１Ｒ 31/28 Ｋ Continued on the front page (51) Int.Cl. 6 Identification symbol FI // G01R 31/28 G01R 31/28 K
Claims (3)
重り部と両者を接続する梁部とを形成し、前記梁部に
は、重り部に加わる加速度により抵抗値の変化する歪み
検出部が形成されてなる半導体加速度センサの特性を検
査するための検査装置であって、前記半導体加速度セン
サを乗せるウエハステージの上面に、半導体加速度セン
サの電極と対向する位置に電極を形成するとともに、前
記重り部を水平に保つための支持突起を形成したプロ−
ブカードを備えたことを特徴とする半導体加速度センサ
の検査装置。1. A semiconductor device, comprising: a support portion forming an outer periphery; a weight portion; and a beam portion connecting the both, and a strain detection portion having a resistance value changing by acceleration applied to the weight portion. An inspection device for inspecting characteristics of a formed semiconductor acceleration sensor, comprising: an electrode formed on a top surface of a wafer stage on which the semiconductor acceleration sensor is mounted, at a position facing an electrode of the semiconductor acceleration sensor; With a support projection to keep the part horizontal
An inspection device for a semiconductor acceleration sensor, comprising a test card.
センサの周辺部と対向する位置に貫通孔を設けたことを
特徴と請求項１記載の半導体加速度センサの検査装置。2. The inspection apparatus for a semiconductor acceleration sensor according to claim 1, wherein a through hole is provided at a position of the probe card facing a peripheral portion of the semiconductor acceleration sensor.
度センサの検査装置を用い、前記ウエハステージに備え
たプロ−ブカード上に、半導体加速度センサの電極形成
面を下にして、半導体加速度センサの電極と前記プロ−
ブカードの電極とが対向するようにして設置し、前記貫
通孔を介して減圧することにより、プロ−ブカードに半
導体加速度センサを吸着した状態で検査を行うようにし
たことを特徴とする半導体加速度センサの検査方法。3. A semiconductor acceleration sensor using the semiconductor acceleration sensor inspection apparatus according to claim 1 or 2 on a probe card provided on the wafer stage, with the electrode formation surface of the semiconductor acceleration sensor facing down. Electrode and the probe
A semiconductor acceleration sensor, wherein the inspection is performed in a state where the semiconductor acceleration sensor is attached to the probe card by installing the probe card so that the electrodes face each other and reducing the pressure through the through hole. Inspection method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9323453A JPH11160352A (en) | 1997-11-25 | 1997-11-25 | Apparatus and method for inspection of semiconductor accelerometer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9323453A JPH11160352A (en) | 1997-11-25 | 1997-11-25 | Apparatus and method for inspection of semiconductor accelerometer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11160352A true JPH11160352A (en) | 1999-06-18 |
Family
ID=18154849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9323453A Pending JPH11160352A (en) | 1997-11-25 | 1997-11-25 | Apparatus and method for inspection of semiconductor accelerometer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11160352A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001252899A (en) * | 2000-03-07 | 2001-09-18 | Akebono Brake Ind Co Ltd | Micromachining sensor element, and wedge wire bonding installation method |
| JP2005268758A (en) * | 2004-02-06 | 2005-09-29 | General Electric Co <Ge> | Micro mechanical device having thinly formed cantilever structure and its related methods |
| JPWO2006106876A1 (en) * | 2005-03-31 | 2008-09-11 | 株式会社オクテック | MICROSTRUCTURE PROBE CARD, MICROSTRUCTURE INSPECTION DEVICE, INSPECTION METHOD, AND COMPUTER PROGRAM |
-
1997
- 1997-11-25 JP JP9323453A patent/JPH11160352A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001252899A (en) * | 2000-03-07 | 2001-09-18 | Akebono Brake Ind Co Ltd | Micromachining sensor element, and wedge wire bonding installation method |
| JP2005268758A (en) * | 2004-02-06 | 2005-09-29 | General Electric Co <Ge> | Micro mechanical device having thinly formed cantilever structure and its related methods |
| JPWO2006106876A1 (en) * | 2005-03-31 | 2008-09-11 | 株式会社オクテック | MICROSTRUCTURE PROBE CARD, MICROSTRUCTURE INSPECTION DEVICE, INSPECTION METHOD, AND COMPUTER PROGRAM |
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