JPH11144667A - Mirror electron microscope - Google Patents
Mirror electron microscopeInfo
- Publication number
- JPH11144667A JPH11144667A JP9303925A JP30392597A JPH11144667A JP H11144667 A JPH11144667 A JP H11144667A JP 9303925 A JP9303925 A JP 9303925A JP 30392597 A JP30392597 A JP 30392597A JP H11144667 A JPH11144667 A JP H11144667A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- electron beam
- mirror
- electrostatic deflector
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は電子顕微鏡に係わ
り、特に試料上でのミラー反射を使って結像させるミラ
ー型電子顕微鏡に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron microscope, and more particularly to a mirror type electron microscope which forms an image by using mirror reflection on a sample.
【0002】[0002]
【従来の技術】ミラー型電子顕微鏡は、Ludwig Reimer;
Transmission Electron Microscopy,Springer−Verlag
1993 に記載されているように、1930年代から公知
の技術である。また、R.M.Tromp M.C.Reuter;Design of
a new photo/low−energyelectron microscope for s
urface studies,Ultramicroscopy 36(1991)99−106に
記載されているように、ミラー電極と磁場レンズを合体
した構造もミラー型電子顕微鏡の応用として例がある。2. Description of the Related Art A mirror type electron microscope is a Ludwig Reimer;
Transmission Electron Microscopy, Springer-Verlag
As described in 1993, this is a known technique since the 1930s. Also, RMTromp MCReuter; Design of
a new photo / low-energyelectron microscope for s
As described in urface studies, Ultramicroscopy 36 (1991) 99-106, a structure in which a mirror electrode and a magnetic field lens are combined has an example as an application of the mirror electron microscope.
【0003】[0003]
【発明が解決しようとする課題】ミラー型電子顕微鏡
は、試料をミラー電極の底に置く。このミラー電極は、
減速電極として使うために、加速電圧と同じ電圧が印加
されている。したがって、試料を機械的に傾斜する機構
は、耐電圧を考慮すると複雑にならざるを得ず、また、
大型試料を大角度で任意の方向に傾斜させるには、さら
に困難となる。In a mirror-type electron microscope, a sample is placed on the bottom of a mirror electrode. This mirror electrode
The same voltage as the acceleration voltage is applied for use as a deceleration electrode. Therefore, the mechanism for mechanically tilting the sample must be complicated in view of the withstand voltage, and
It is even more difficult to tilt a large sample in any direction at a large angle.
【0004】[0004]
【課題を解決するための手段】本発明においては、ミラ
ー電極の回転対称軸に沿う電子軌道から外れるように静
電偏向器を組込み、電子線軌道を傾斜させることによ
り、試料傾斜と同等の効果を得る。In the present invention, an electrostatic deflector is incorporated so as to deviate from the electron trajectory along the rotational symmetry axis of the mirror electrode, and the electron beam trajectory is tilted, so that the same effect as the sample tilt is obtained. Get.
【0005】[0005]
【発明の実施の形態】以下、図面を参照して本発明の実
施の形態を説明する。図1は、本発明によるミラー型電
子顕微鏡の概略構成図である。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic configuration diagram of a mirror electron microscope according to the present invention.
【0006】電子銃1より放出された電子線2は、収束
レンズ3a,3bで収束され、カステンヘンリ型偏向器
4に入射する。カステンヘンリ偏向器4は、入射した電
子線の方向を変えるための磁気プリズム4aと、電子線
をミラー反射するための電極4b,4c,4eおよび静
電偏向器4dから構成されている。[0006] The electron beam 2 emitted from the electron gun 1 is converged by the converging lenses 3 a and 3 b and is incident on a Kasten-Henry deflector 4. The Kasten-Henry deflector 4 includes a magnetic prism 4a for changing the direction of an incident electron beam, electrodes 4b, 4c, 4e for mirror-reflecting the electron beam, and an electrostatic deflector 4d.
【0007】電子線2は磁気プリズム4aで90°曲げ
られ電極4bへ向かう。電極4b,4c,4eでミラー
反射さる。電極4eには、加速電圧とほぼ同電圧が、印
加されている。試料7は、電極4eの上にある。反射さ
れた電子線2は、試料7の表面情報を持ち、ふたたび磁
気プリズム4aに入射する。この電子線2は、磁気プリ
ズム4aで再度曲げられ、投影レンズ5a,5bへ向か
う。投影レンズ5a,5bにより、倍率を調整された
後、蛍光板6上に像を結ぶ。The electron beam 2 is bent 90 degrees by the magnetic prism 4a and travels to the electrode 4b. The light is mirror-reflected by the electrodes 4b, 4c and 4e. A voltage substantially equal to the acceleration voltage is applied to the electrode 4e. The sample 7 is on the electrode 4e. The reflected electron beam 2 has the surface information of the sample 7 and enters the magnetic prism 4a again. The electron beam 2 is bent again by the magnetic prism 4a and travels to the projection lenses 5a and 5b. After the magnification is adjusted by the projection lenses 5a and 5b, an image is formed on the fluorescent screen 6.
【0008】つぎに、静電偏向器4dの動作について説
明する。静電偏向器4dが動作していない場合は、試料
7に対し垂直に入射しているが、静電偏向器4dを働か
せると電子線2の試料7に対する入射に角度が付く。す
なわち、電子線2に対して試料7を傾斜させた効果を持
つ。Next, the operation of the electrostatic deflector 4d will be described. When the electrostatic deflector 4d is not operating, the light is perpendicularly incident on the sample 7, but when the electrostatic deflector 4d is activated, the incidence of the electron beam 2 on the sample 7 is angled. That is, there is an effect that the sample 7 is inclined with respect to the electron beam 2.
【0009】試料7,電極4eは、試料駆動装置8に保
持されている。試料駆動装置8は、一次元方向に試料7
を移動させることができる。試料駆動装置8は、試料駆
動装置9に保持されている。試料駆動装置9は、試料駆
動装置8と試料を試料駆動装置8とは異なる一次元方向
に移動させることができる。試料駆動装置8と試料駆動
装置9により、試料7は、二次元で移動できる。試料駆
動装置8,9のそれぞれの移動可能量は、半導体ウエハ
の全域を覆うことのできる量である。The sample 7 and the electrode 4e are held by a sample driving device 8. The sample driving device 8 moves the sample 7 in one dimension.
Can be moved. The sample driving device 8 is held by the sample driving device 9. The sample driving device 9 can move the sample driving device 8 and the sample in a one-dimensional direction different from that of the sample driving device 8. The sample 7 can be moved two-dimensionally by the sample driving device 8 and the sample driving device 9. The movable amount of each of the sample driving devices 8 and 9 is an amount that can cover the entire area of the semiconductor wafer.
【0010】図2は、静電偏向器4dの平面図である。
静電偏向器4dは、静電偏向板10a,10b,10cお
よび10dで構成する。静電偏向板10aと10c,1
0bと10dが対になって偏向動作を行う。二対の偏向
板を任意に組み合わせることにより、任意の方向に電子
線2を偏向させることができる。FIG. 2 is a plan view of the electrostatic deflector 4d.
The electrostatic deflector 4d is constituted by electrostatic deflectors 10a, 10b, 10c and 10d. Electrostatic deflection plates 10a and 10c, 1
A pair of 0b and 10d performs a deflection operation. By arbitrarily combining two pairs of deflection plates, the electron beam 2 can be deflected in an arbitrary direction.
【0011】[0011]
【発明の効果】本発明によれば、試料を傾斜することな
く、傾斜像を撮影することができ、試料の立体的な観察
を行うことができる効果がある。According to the present invention, it is possible to take a tilted image without tilting the sample, and it is possible to perform three-dimensional observation of the sample.
【図1】本発明によるミラー型電子顕微鏡のミラー電極
の概略図。FIG. 1 is a schematic view of a mirror electrode of a mirror electron microscope according to the present invention.
【図2】本発明によるミラー電極用偏向電極の平面図。FIG. 2 is a plan view of a deflection electrode for a mirror electrode according to the present invention.
1…電子銃、2…電子線、3a,3b…収束レンズ、4
…カステンヘンリ型偏向器、5a,5b…投影レンズ、
6…蛍光板、7…試料、8,9…試料駆動装置、10
a,10b,10c,10d…静電偏向板。DESCRIPTION OF SYMBOLS 1 ... Electron gun, 2 ... Electron beam, 3a, 3b ... Convergent lens, 4
... Kasten-Henry type deflector, 5a, 5b ... Projection lens,
6 fluorescent plate, 7 sample, 8, 9 sample drive device, 10
a, 10b, 10c, 10d ... electrostatic deflection plates.
Claims (2)
ズ,磁気プリズム,ミラー電極,投影レンズからなる電
子光学系を持ち、結像させた像を可視化する手段を持
ち、前記ミラー電極の底に試料を保持しかつ移動できる
試料駆動装置を備え、前記ミラー電極に静電偏向器を組
み込んだことを特徴とするミラー型電子顕微鏡。An electron gun for generating an electron beam; an electron optical system including a converging lens, a magnetic prism, a mirror electrode, and a projection lens; and a means for visualizing an image formed by the electron gun. A mirror type electron microscope comprising: a sample driving device capable of holding and moving a sample; and an electrostatic deflector incorporated in the mirror electrode.
きるようにしたことを特徴とするミラー型電子顕微鏡。2. A mirror-type electron microscope, wherein a semiconductor wafer can be held by the sample driving device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9303925A JPH11144667A (en) | 1997-11-06 | 1997-11-06 | Mirror electron microscope |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9303925A JPH11144667A (en) | 1997-11-06 | 1997-11-06 | Mirror electron microscope |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH11144667A true JPH11144667A (en) | 1999-05-28 |
Family
ID=17926938
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9303925A Pending JPH11144667A (en) | 1997-11-06 | 1997-11-06 | Mirror electron microscope |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH11144667A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004264290A (en) * | 2003-01-07 | 2004-09-24 | Kla-Tencor Technologies Corp | High-contrast inspection and close inspection of magnetic medium and of head |
EP1635374A4 (en) * | 2003-05-09 | 2010-02-24 | Ebara Corp | Electron beam device, electron beam inspection method, electron beam inspection device, pattern inspection method and exposure condition determination method |
-
1997
- 1997-11-06 JP JP9303925A patent/JPH11144667A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004264290A (en) * | 2003-01-07 | 2004-09-24 | Kla-Tencor Technologies Corp | High-contrast inspection and close inspection of magnetic medium and of head |
EP1635374A4 (en) * | 2003-05-09 | 2010-02-24 | Ebara Corp | Electron beam device, electron beam inspection method, electron beam inspection device, pattern inspection method and exposure condition determination method |
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