JPH11135432A - Vacuum processing equipment - Google Patents

Abstract

(57) [Summary] An object of the present invention is to prevent the temperature of a rectifying nozzle from rising and to make the wafer temperature uniform. A processing chamber is disposed in the processing chamber.
A work pedestal 13 having a heater 12 inside and a wafer 14 disposed thereon, and a wafer 14 in the processing chamber 11;
And a gas rectification nozzle 15 having a function of supplying a reaction gas to the main surface of the wafer,
A vacuum processing apparatus comprising an optical reflection layer 17 on a surface of the gas rectification nozzle 15 facing the wafer 14.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum processing apparatus, and more particularly, to a vacuum processing apparatus in which a gas rectification nozzle plate disposed right above a wafer and opposed to the wafer is improved.

[0002]

2. Description of the Related Art Conventionally, as a vacuum processing apparatus for forming a film on a wafer by vapor phase growth, for example, the one shown in FIG. 3 is known. Reference numeral 1 in the figure is a bottomed cylindrical processing chamber. In the processing chamber 1, a work receiving table 3 having a heater 2 therein is disposed. A wafer 4 is placed on the work receiving table 3. Right above the processing chamber 1, a gas rectifying nozzle 5 made of quartz is arranged so that the lower surface faces the main surface of the wafer 4. Here, on the lower surface of the gas rectification nozzle 5, the introduced reaction gas is
A large number of nozzle holes 6 are formed concentrically so as to uniformly feed the main surface. The gas rectification nozzle 5 is provided with a cooling water passage 7 for cooling the nozzle 5. Furthermore,
The processing chamber 1 and the gas rectification nozzle 5 are provided with a reaction gas introduction port 8 for introducing a reaction gas into a cavity formed between the gas rectification nozzle and a ceiling plate described later. A top plate 9 made of quartz is fitted to the gas rectification nozzle 5. A discharge port 10 is provided at a lower portion of the processing chamber 1.

[0003]

However, in the conventional vacuum processing apparatus, since quartz is used as the material of the gas rectification nozzle 5, it is heated by receiving radiant heat from the heater 2 and is heated during vapor phase growth. Therefore, the nozzle surface S needs to be frequently cleaned. Further, for the same reason, the gas rectifying nozzle surface is close to a surface that absorbs heat (black body surface: reflectance 1), so that it was easy to absorb heat also in this respect.

The present invention has been made in view of such circumstances, and has a structure in which at least an optical reflection layer is provided on a surface of a gas rectification nozzle facing a wafer, so that heat reflected from a heater can be applied to the wafer. It is an object of the present invention to provide a vacuum processing apparatus that can reflect light to prevent a rise in the temperature of a rectifying nozzle.

According to the present invention, a rise in the temperature of the rectifying nozzle is prevented by forming the gas rectifying nozzle to have a curved surface whose central surface located on the wafer side is convex and concave toward the peripheral edge. In addition, an object of the present invention is to provide a vacuum processing apparatus capable of turning the reflection direction at the center of the rectifying surface toward the outer periphery, returning energy uniformly within the wafer surface, and improving temperature uniformity within the wafer surface.

[0006]

According to a first aspect of the present invention, there is provided a processing chamber, a work receiving table which is disposed in the processing chamber, has a heating mechanism therein, and has a wafer disposed thereon, and a processing chamber. A gas rectifying nozzle arranged to face the wafer and having a function of supplying a reaction gas to the main surface of the wafer, and having at least an optically reflective layer on a surface of the gas rectifying nozzle facing the wafer. A vacuum processing apparatus characterized in that:

According to a second aspect of the present invention, there is provided a processing chamber, a work receiving table which is disposed in the processing chamber, has a heating mechanism therein and has a wafer disposed thereon, and is disposed in the processing chamber so as to face the wafer. A gas rectifying nozzle having a function of supplying a reaction gas to the main surface of the wafer, wherein the gas rectifying nozzle has a curved surface whose central surface located on the wafer side is convex and concave toward the peripheral portion. It is a vacuum processing apparatus characterized by having.

In the present invention, it is preferable that the gas rectification nozzle has a cooling water passage. Thereby, the temperature rise of the gas rectification nozzle can be suppressed, and the deposition of a film on the gas rectification nozzle surface during vapor phase growth can be prevented.

In the present invention, the gas rectifying nozzle is made of an aluminum material and has a surface layer formed of an electroless nickel-plated underlayer and an electrolytic nickel-plated upper layer formed on the underlayer. Is preferred. Thereby, high reflectance can be obtained and corrosion resistance due to corrosive gas can be obtained.

[0010]

Embodiments of the present invention will be described below with reference to the drawings. (Embodiment 1) Reference is made to FIGS. 1 (A) and 1 (B). here,
FIG. 1A is a cross-sectional view illustrating an overall view of a vacuum processing apparatus according to a first embodiment of the present invention, and FIG. 1B is an essential view of a rectifying nozzle plate which is one configuration of the apparatus in FIG. It is sectional drawing of a part.

Reference numeral 11 in the drawing denotes a cylindrical processing chamber having a bottom. In the processing chamber 11, a work receiving table 13 having a heater 12 as a heating mechanism therein is disposed. A wafer 14 is placed on the work receiving table 13. The processing chamber
A gas rectification nozzle 15 made of Al is arranged on the upper part of the wafer 11 so as to face the main surface of the wafer 14 in a state where the periphery is locked to the periphery of the processing chamber 11 via an O-ring 16. .
Here, the central portion of the gas rectification nozzle 15 is a flat surface, and as shown in FIG. 1B, an underlayer 17a subjected to electroless nickel plating and an underlayer 17a formed on the underlayer 17a. An optical reflection layer 17 composed of an upper layer 17b subjected to electrolytic nickel plating is formed. Further, the gas rectification nozzle 15 is formed with a number of nozzle holes 18 concentrically so as to uniformly supply a reaction gas described later to the main surface of the wafer 14. The gas straightening nozzle 15 is provided with a cooling water passage 19 for cooling the nozzle 15. Further, the processing chamber
The gas rectification nozzle 11 and the gas rectification nozzle 15 are provided with a reaction gas introduction port 21 for introducing a reaction gas into a cavity 20 formed between the gas rectification nozzle and a ceiling plate described later. The gas rectifying nozzle 15
Is fitted with an Al top plate 22 via an O-ring 23. An outlet 24 for discharging the reaction gas in the processing chamber 11 is provided below the processing chamber 11.

According to the vacuum processing apparatus of the first embodiment, as shown in FIG. 1B, the flat surface S of the gas rectifying nozzle 15 made of Al facing the wafer 14 is subjected to electroless nickel plating. Base layer 17a, and an upper layer 17b formed on the base layer 17a and having been subjected to electrolytic nickel plating.
Since the reflective layer 17 made of
A high reflectivity can be obtained, and the heat reflected from the heater 12 can be reflected on the wafer 14 to prevent the temperature of the gas rectification nozzle 15 from rising, and also to obtain corrosion resistance due to corrosive gas. Further, since the gas straightening nozzle 15 is provided with the cooling water passage 19 for cooling the nozzle 15, the temperature rise of the gas straightening nozzle 15 can be suppressed, and a film can be deposited on the gas straightening nozzle surface during vapor phase growth. Can be prevented.

(Embodiment 2) Referring to FIG. However, FIG.
The same members are denoted by the same reference numerals and description thereof is omitted, and only the main parts will be described. The vacuum processing apparatus according to the second embodiment is characterized in that the lower surface of the gas rectification nozzle 31 has a curved surface 32 in which the central surface is convex and concave toward the peripheral portion, as compared with the device in FIG. It is.

According to the vacuum processing apparatus having such a configuration, it is possible to prevent the temperature of the gas rectifying nozzle 31 from rising and obtain the corrosion resistance due to the corrosive gas as in the first embodiment, and to set the reflection direction at the center of the rectifying surface to the outer peripheral direction. In this case, energy is uniformly returned within the wafer surface, and the temperature uniformity within the wafer surface can be improved. That is, when the lower surface of the gas rectification nozzle is flat, the temperature at the center of the wafer tends to be higher than the whole, but when the reflection surface is a convex curved surface as shown in FIG. 2, energy is radiated to the outer periphery of the wafer. In addition, the wafer temperature can be made uniform.

In the above embodiment, the gas rectifying nozzle is made of Al, the lower surface corresponding to the main surface of the wafer is subjected to an electroless nickel-plated underlayer, and the electrolytic nickel plating process formed on the underlayer. Although the case where the surface layer made of the upper ground layer is formed has been described, the present invention is not limited to this, and another material may be used. In addition, the surface layer may be formed not only on the lower surface corresponding to the main surface of the wafer but also on the entire surface with the above-described material.

[0016]

As described above in detail, according to the present invention, the gas rectifying nozzle is provided with an optical reflecting surface, so that the heat reflected from the heater is reflected on the wafer, and the gas rectifying nozzle has a reflecting surface. A vacuum processing apparatus capable of preventing a rise in temperature can be provided.

Further, according to the present invention, the gas rectifying nozzle is configured to have a curved surface whose central surface located on the wafer side is convex and concave toward the peripheral portion, thereby reducing the temperature rise of the rectifying nozzle. In addition, a vacuum processing apparatus can be provided in which the reflection direction at the center of the rectifying surface is directed toward the outer periphery, energy is returned uniformly within the wafer surface, and temperature uniformity within the wafer surface is improved.

[Brief description of the drawings]

FIG. 1 is an explanatory view of a vacuum processing apparatus according to a first embodiment of the present invention. FIG. 1 (A) is a cross-sectional view showing the entire apparatus,
FIG. 2B is a cross-sectional view of a main part of a rectifying nozzle which is one configuration of the apparatus in FIG.

FIG. 2 is a sectional view of a vacuum processing apparatus according to a second embodiment of the present invention.

FIG. 3 is a sectional view of a conventional vacuum processing apparatus.

[Explanation of symbols]

 11: Processing chamber, 12: Heater (heating mechanism), 13: Work pedestal, 15, 31: Gas rectification nozzle, 16, 23: O-ring, 17: Reflective layer, 17a: Underlayer, 17b: Upper layer, 18 ... Nozzle hole, 19 ... Cooling channel, 21 ... Reaction gas inlet, 22 ... Top plate, 24 ... Outlet.

Claims (4)

[Claims] A processing chamber, a work receiving table disposed in the processing chamber and having a heating mechanism therein and a wafer disposed thereon, and a work receiving table disposed in the processing chamber so as to face the wafer, A vacuum processing apparatus comprising: a gas rectification nozzle having a function of supplying a reaction gas to a surface; and at least an optical reflection layer on a surface of the gas rectification nozzle facing the wafer. 2. The vacuum processing apparatus according to claim 1, wherein the gas rectification nozzle includes a cooling water passage. 3. The gas rectifying nozzle is made of an aluminum material, and has a surface layer formed of an electroless nickel-plated underlayer and an electrolytic nickel-plated upper layer formed on the underlayer. 3. The vacuum processing apparatus according to claim 1, wherein 4. A processing chamber, a work pedestal disposed in the processing chamber, having a heating mechanism therein and arranging a wafer thereon, and a work receiving table disposed in the processing chamber so as to face the wafer, A gas rectifying nozzle having a function of supplying a reaction gas to the surface, wherein the gas rectifying nozzle has a curved surface whose central surface located on the wafer side is convex and concave toward the peripheral portion. Vacuum processing equipment.