JPH11121653A - Semiconductor device and method for manufacturing it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To mount a semiconductor chip on a transparent substrate by, while a part between the semiconductor chip and the transparent substrate being hollow, comprising an insulating member applied into other part. SOLUTION: A hollow part 13 is formed between a part of a microlens group 3 of a semiconductor chip 1 and a transparent substrate 7. A ultraviolet thermosetting resin 12 is so formed as to enclose the hollow part 13. The ultraviolet thermosetting resin 12 in the entire region between the semiconductor chip 1 and the transparent substrate 7 is completely hardened by heating. A gold ball 4 connects, electrically and mechanically, an electrode pad 2 of the semiconductor chip 1 to an electrode 6 of the transparent substrate 7. The ultraviolet thermosetting resin 12 is an insulating member, so, is does not change electrical connection between the semiconductor chip 1 and the transparent substrate 7. Thus, the light coming from outside through the transparent substrate 7 enters the microlens group 3 through the follow part 13 without being hindered by the ultraviolet thermosetting resin 12.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device, and more particularly, to a semiconductor device in which a semiconductor chip is mounted on a transparent substrate.

[0002]

2. Description of the Related Art FIG. 3A is a diagram showing a structure of a chip-on-glass semiconductor device (hereinafter referred to as COG) according to a conventional technology.

The semiconductor chip 1 has an electrode pad 2. The glass substrate 7 has an electrode 6. When mounting the semiconductor chip 1 on the glass substrate 7, the electrode pads 2 of the semiconductor chip 1 and the electrodes 6 of the glass substrate 7 are electrically connected by the gold bumps 4. However, since this connection has low mechanical strength, the synthetic resin 12 is poured between the semiconductor chip 1 and the glass substrate 7 and fixed.

FIG. 3B is a diagram showing a COG structure of the semiconductor chip 1 having the microlens group 3.

[0005] The semiconductor chip 1 is a solid-state image sensor including, for example, a photoelectric sensor and a charge-coupled device (hereinafter, referred to as a CCD). The photoelectric sensor converts light received from outside through the microlens group 3 into an electric signal. The electric signal is transferred by the CCD, and an image signal is generated.

[0006] The micro lens group 3 is usually formed of a synthetic resin. In this case, when the synthetic resin 12 is poured between the semiconductor chip 1 and the glass substrate 7 as in FIG. 3A, the microlens group 3 is covered with the synthetic resin 12. Since the microlens group 3 and the synthetic resin 12 have substantially the same refractive index with respect to light, the microlens group 3 does not function as a lens. That is, the micro lens group 3 loses the function of condensing light.

On the other hand, if the synthetic resin 12 is not poured between the semiconductor chip 1 and the glass substrate 7, the mechanical connection between the semiconductor chip 1 and the glass substrate 7 becomes weak as described above, and And the glass substrate 7 are easily separated.

For the above reasons, the semiconductor chip 1 having the microlens group 3 cannot form a COG. Therefore, the semiconductor chip 1 having the microlens group 3 is packaged by wire bonding. The configuration is shown below.

FIG. 3C shows a configuration of the semiconductor chip 1 which is wire-bonded. The semiconductor chip 1 has an electrode 2 and a micro lens group 3. The lower surface of the semiconductor chip 1 is fixed on the bottom surface of the housing space in the package 51. The electrodes 2 on the semiconductor chip 1 are bonded to leads 54 in the package 51 by wires 53. The microlens group 3 is provided on the upper surface of the semiconductor chip 1, and the upper part of the package 51 is sealed with a glass plate 52. Light enters the microlens group 3 through the glass plate 52.

[0010]

As shown in FIG. 3C, when the semiconductor chip 1 is packaged by wire bonding, the package becomes thicker and larger than the COG structure. In addition, the mounting cost increases.

An object of the present invention is to provide a semiconductor device in which a semiconductor chip is mounted on a transparent substrate or a method of manufacturing the same.

[0012]

According to one aspect of the present invention, a semiconductor chip having an electrode, a transparent substrate provided opposite to the semiconductor chip and having an electrode, an electrode of the semiconductor chip and the transparent substrate are provided. There is provided a semiconductor device having a conductive member for electrically connecting an electrode of a substrate and an insulating member which is partially hollow between the semiconductor chip and the transparent substrate and is filled in another portion. .

When the semiconductor chip has a microlens, the function of the microlens can be maintained by hollowing the microlens portion between the semiconductor chip and the transparent substrate.

According to another aspect of the present invention, there are provided (a) a step of preparing a semiconductor chip having electrodes, (b) a step of preparing a transparent substrate having electrodes, and (c) a step of preparing the semiconductor chip and the transparent substrate. Facing the substrate, and electrically connecting the electrode of the semiconductor chip and the electrode of the transparent substrate,
(D) pouring a resin between the semiconductor chip and the transparent substrate, and forming a hollow portion in a part of the space between the semiconductor chip and the transparent substrate. Is done.

[0015]

DETAILED DESCRIPTION OF THE INVENTION FIGS. 1A to 1E and 2F.
FIGS. 7A to 7H are views showing the steps of manufacturing the semiconductor device according to the first embodiment of the present invention. FIGS.

FIG. 1A is a sectional view of the semiconductor chip 1, and FIG. 1B is a sectional view of the semiconductor chip 1 shown in FIG.
FIG. 3 is a plan view when viewed from below.

First, a semiconductor chip 1 is prepared. The semiconductor chip 1 has a plurality of electrode pads (bonding pads) 2 near the outer periphery and a microlens group 3 in which microlenses are densely arranged near the center. The electrode pad 2 is formed of, for example, Al or Cr. Micro lens group 3
Is formed of, for example, a synthetic resin.

The semiconductor chip 1 is a solid-state image sensor including, for example, a photoelectric sensor and a CCD. The photoelectric sensor is, for example, a photodiode, and converts light received from outside through the microlens group 3 into an electric signal. The electric signal is transferred by the CCD, and an image signal is generated.

A method for forming the micro lens group 3 will be described. First, a synthetic resin layer is formed, and a resist film having a predetermined pattern is formed thereon. Next, heating is performed to round the corners of the resist film to form microlenses. A method for manufacturing a solid-state imaging device is described in, for example, Japanese Patent Application Laid-Open No. 5-219445.

Next, the semiconductor chip 1 and the glass substrate are
A case where connection is made with a gold ball and a conductive resin is shown as an example.
As shown in FIG. 1C, gold balls 4 are arranged on the electrode pads 2 of the semiconductor chip 1 by a ball bonding apparatus. The gold ball has a size of, for example, 30 to 80 μm.

Next, as shown in FIG. 1D, a conductive resin 5 is attached to a lower portion of the gold ball 4. For example, using a pallet having the entire surface coated with a conductive resin 5, gold balls 4
The conductive resin 5 can be attached to the substrate. The conductive resin 5 is, for example, a material in which silver particles are dispersed in an epoxy resin (silver paste).

Next, as shown in FIG. 1E, the electrodes 6 on a transparent substrate (eg, a glass substrate) 7 are sandwiched between the gold balls 4.
And the corresponding electrode pads 2 of the semiconductor chip 1 are brought into contact with each other and heated. The conductive resin 5 is cured by heating, and the electrodes 6 of the transparent substrate 7 and the electrode pads 2 of the semiconductor chip 1 are electrically connected by predetermined wiring. The heating conditions are, for example, a heating temperature of 100 to 200 ° C. and a heating time of 30 minutes. The electrode 6 is, for example, Cr or Ni, is formed on the transparent substrate 7 by vapor deposition, plating, or sputtering, and is patterned by, for example, photolithography and etching.

The material of the transparent substrate 7 is a transparent insulating material, for example, glass, polycarbonate, polyester or Kapton, and glass is particularly preferable. Hereinafter, a case where a glass substrate is used as the transparent substrate 7 will be described.

Next, as shown in FIG. 2 (F), the light-shielding mask 14 is arranged so as to face the lower surface of the glass substrate 7, and an electromagnetic wave (eg, ultraviolet rays) 15 is irradiated from below the glass substrate 7. The light-shielding mask 14 has a predetermined pattern, and allows the electromagnetic wave 15 to pass only through the region 13 including the microlens group 3.

The electromagnetic waves 15 are, for example, ultraviolet rays, infrared rays,
Visible light or X-rays are preferable, and ultraviolet light is particularly preferable.
Hereinafter, a case where ultraviolet light is used as the electromagnetic wave 15 will be described.

Next, while irradiating the ultraviolet ray 15, the insulating thermo-ultraviolet curable resin 12 is supplied from the capillary 11 between the semiconductor chip 1 and the glass substrate 7, for example, at normal temperature.

For example, as the thermo-ultraviolet curable resin 12, O
G160 UV / Heat epoxy (Epoxy
Technology Inc. OG161 U
V / Heat epoxy (Epoxy Techno
logic Inc. Made), OG162 UV / Heat
epoxy (Epoxy TechnologyIn
c. MULTI-CURE 602T (Sumitomo 3M)
MULTI-CURE 628St (Sumitomo 3M Corporation), MULTI-CURE 628T
(Manufactured by Sumitomo 3M Limited) can be used.

The thermo-ultraviolet curing resin 12 is used for the semiconductor chip 1
And between the glass substrate 7 and the glass substrate 7 from the end toward the center by capillary action.

The thermo-ultraviolet curing resin 12 is a resin that is cured by ultraviolet light or heat. The thermal ultraviolet curable resin 12 is
It flows without being cured in a region where the ultraviolet rays 15 are not irradiated, and is cured in a region where the ultraviolet rays 15 are irradiated.
As a result, the thermo-ultraviolet curable resin 12a at the boundary between the region 13 irradiated with the ultraviolet light and the region not irradiated with the ultraviolet light is cured.

When the thermo-ultraviolet curing resin 12a at the boundary is cured once, the thermo-ultraviolet curing resin 12 does not flow into the ultraviolet irradiation region 13 any more. However, since it takes some time to cure the thermo-ultraviolet curable resin 12a, the thermo-ultraviolet curable resin 12a hardens after flowing into the ultraviolet irradiation region 13 a little.

The electrode pads 2 on the semiconductor chip 1 and the electrodes 6 on the glass substrate 7 are connected via gold balls 4.
The thermo-ultraviolet curable resin 12 includes the electrode pad 2 and the gold ball 4
And a part of the electrode 6.

When the thermo-ultraviolet curable resin 12 has sufficiently entered between the semiconductor chip 1 and the glass substrate 7, the supply of the thermo-ultraviolet curable resin 12 from the capillary 11 is stopped.

For example, when the thickness of the thermo-ultraviolet curable resin 12 is 5
At the time of 0 μm, the irradiation condition of the ultraviolet rays 15 is 100 m power.
The irradiation time is 2 to 5 seconds at W. Generally, the irradiation time is a time until the thermal ultraviolet curable resin 12 finishes flowing into the periphery of the region 13 and is different from the time when the thermal ultraviolet curable resin 12 is cured. The irradiation time varies depending on the method of pouring the thermo-ultraviolet curable resin 12, but within about 5 seconds when flowing into the area 13 from four directions, and about 10 when flowing from two directions.
It takes about 10 to 30 seconds to flow from one direction within seconds.

The ultraviolet irradiation area 13 shown in FIG.
When projected from above, it is a rectangular area, for example, as shown in FIG. However, it is not necessary to irradiate the center of the rectangle with ultraviolet rays. A hollow portion 13 is formed between the portion of the microlens group 3 of the semiconductor chip 1 and the glass substrate 7. The thermal ultraviolet curable resin 12 is formed so as to surround the hollow portion 13.

In this state, however, only the thermo-ultraviolet curable resin 12a at the boundary is cured, and the portion of the thermo-ultraviolet curable resin 12 not irradiated with the ultraviolet rays 15 is not cured.

Next, as shown in FIG.
Heat 16 is applied to cure the portions of the thermo-ultraviolet curable resin 12 not irradiated with 5. The heating condition is, for example, 80
5 ° C. for 5 hours. The thermal ultraviolet curing resin 12 in the entire region between the semiconductor chip 1 and the glass substrate 7 is completely cured by heating. The ultraviolet curing shown in FIG. 2F is temporary curing, and the thermal curing shown in FIG. 2G can be called main curing. Thus, the COG is completed.

The length of the hollow portion 13 in a direction substantially perpendicular to the semiconductor chip 1 (the semiconductor chip 1 and the glass substrate 7
The distance L1 is preferably 1 to 200 μm, particularly preferably 5 to 80 μm.

The length L2 of the hollow portion 13 in an in-plane (horizontal) direction substantially parallel to the surface of the semiconductor chip 1 is, for example, 1 to 10 mm. The length (2 × L3) of the semiconductor chip 1 excluding the hollow portion 13 in a substantially horizontal direction with respect to the semiconductor chip 1 is, for example, 0.7 to 3 mm. In that case, half of the length L3 is the length from one end of the semiconductor chip to the hollow portion 13, for example, 0.35 to 0.35.
1.5 mm.

The lower surface of the semiconductor chip 1 has a length L3 from the end.
Covered only by the thermo-ultraviolet curing resin 12. To physically firmly fix the semiconductor chip 1 on the glass substrate 7,
The length L3 is preferably at least 0.35 mm, more preferably at least 1.0 mm. On the lower surface (front surface) of the semiconductor chip 1, the area covered by the thermo-ultraviolet curing resin 12 is preferably 15% or more, more preferably 30% or more, based on the total area of the lower surface of the semiconductor chip 1.

FIG. 2H is a sectional view taken along the line AA of FIG. 2G. The thermal ultraviolet curable resin 12 is formed so as to surround the hollow portion 13. The gold balls 4 electrically and mechanically connect the electrode pads 2 of the semiconductor chip 1 and the electrodes 6 of the glass substrate 7. However, since the mechanical connection strength of the gold ball 4 is weak, the thermal ultraviolet curing resin 12 reinforces the mechanical connection between the semiconductor chip 1 and the glass substrate 7. Since the thermal ultraviolet curing resin 12 is an insulating member, the electrical connection between the semiconductor chip 1 and the glass substrate 7 is not changed.

The micro lens group 3 is usually formed of a synthetic resin. If the thermo-ultraviolet curable resin 12 is poured into the hollow portion 13, the microlens group 3 will be covered with the thermo-ultraviolet curable resin 12. Micro lens group 3
Since the thermal ultraviolet curable resin 12 and the thermal ultraviolet curing resin 12 have substantially the same refractive index, the microlens group 3 does not function as a lens.

According to the present embodiment, it is possible to prevent the thermal ultraviolet curing resin 12 from flowing into the hollow portion 13 including the microlens group 3. Micro lens group 3
It is not covered by the thermo-ultraviolet curable resin 12. Light incident on the microlens group 3 from outside via the glass substrate 7 is incident on the microlens group 3 via the hollow portion 13 without being disturbed by the thermo-ultraviolet curable resin 12. The micro lens group 3 can maintain the function as a lens.

The size of the hollow portion 13 when the COG is projected in the vertical direction of the semiconductor chip 1 is, for example, a square of L2 × L2. The length L2 is, for example, 1 to 10 mm.
The hollow portion 13 is not limited to a square, and can be formed in various shapes. Further, the hollow portion 13 is not limited to the case where the hollow portion 13 is closed (the case where the hollow portion 13 is surrounded by the thermo-ultraviolet curable resin 12), and may be open. Part of the space between the semiconductor chip 1 and the glass substrate 7 can be hollow, and the other part can be filled with a thermo-UV curing resin.

In FIG. 2 (G), instead of heating, ultraviolet rays 17 are radiated from the substantially horizontal direction of the semiconductor chip 1 (or the glass substrate 7) to the entire thermo-ultraviolet curable resin 12, so that thermal ultraviolet rays are irradiated. The cured resin 12 may be cured. In that case, an ultraviolet curable resin can be used instead of the thermal ultraviolet curable resin 12.

In the above, by irradiating ultraviolet rays,
Although the case where the thermo-ultraviolet curable resin or the ultraviolet curable resin is cured has been described, when irradiating other light such as visible light instead of ultraviolet rays, instead of the thermo-ultraviolet curable resin or the ultraviolet curable resin, a photothermosetting resin, A photocurable resin (for example, a photosensitive polyimide resin), an infrared curable resin, or a black thermosetting resin may be used. The black thermosetting resin generates heat internally by light irradiation and cures. In the present specification, for example, a heating condition at room temperature (room temperature) for 24 hours is also referred to as a photothermosetting resin.

According to this embodiment, a semiconductor chip having a microlens can be mounted on a transparent substrate.
COG can be realized if the transparent substrate is formed of glass. COG is different from the case where the semiconductor chip 1 is packaged by wire bonding (FIG. 3C).
It can be thin and small. Further, mounting cost can be reduced.

The semiconductor chip is not limited to a solid-state imaging device, but may be an image projection device (for example, a micro-reflection mirror device). Further, the semiconductor chip is not limited to the one having a microlens as long as a hollow part is required between the semiconductor chip and the glass substrate. For example, the present invention can be applied to a semiconductor chip having a vibrating element such as a micromachine or an acceleration sensor. The vibrating element can vibrate in the hollow part, and can maintain the function of the element. According to this embodiment, various semiconductor chips can be mounted on the transparent substrate.

Further, the semiconductor chip may be an EPROM. When erasing the contents of a memory in an EPROM by irradiating ultraviolet rays, the resin may absorb the ultraviolet rays. Since air absorbs less ultraviolet light than resin, EPRO
By making the ultraviolet window portion of M hollow, the memory contents can be erased with a small amount of ultraviolet rays.

FIGS. 4A to 4E and FIGS. 5F to 5I.
FIG. 9 is a diagram showing a manufacturing process of the semiconductor device according to the second embodiment of the present invention. 4 (A) to 4 (E), 5 (F) to
FIG. 6I is a cross-sectional view of the semiconductor device, and FIGS.
7C and 7D to 7F are plan views of the corresponding semiconductor devices.

As shown in FIGS. 4A and 6A,
A transparent substrate (eg, a glass substrate) 7 having an electrode 6 formed on its surface is prepared. The electrode 6 has an external connection electrode 6a, a semiconductor chip connection electrode 6c, and a wiring 6b connecting the electrodes 6a and 6b.

Next, as shown in FIGS. 4B and 6B, a conductive thermosetting resin 5 is applied on the electrode 6c for connecting the semiconductor chip. The conductive thermosetting resin 5 is, for example, an Ag paste or an Au paste.

As shown in FIGS. 4C and 6C,
As in FIG. 1A, a semiconductor chip 1 having a microlens group (hereinafter, referred to as a microlens) 3 and a bonding pad 2 is prepared. The material of the bonding pad 2 is, for example, Au, Pd, WSi, or an Al / Si alloy. The height of the bonding pad 2 is, for example, 5 to 5.
200 μm.

Next, as shown in FIGS. 4D and 7D, the semiconductor chip 1 of FIG. 4C is placed on the glass substrate 7 of FIG. 4B and heated. The bonding pad 2 on the semiconductor chip 1 contacts the electrode 6 on the transparent substrate 7,
The conductive resin 5 covers the periphery. The conductive resin 5 is cured by the above-described heating.

Next, as shown in FIG. 4 (E) and FIG. 7 (E), a light-shielding mask 14 having a predetermined pattern of openings is arranged so as to face the lower surface of the glass substrate 7, and a first electromagnetic wave (for example, (Ultraviolet light) 15 is irradiated from below the glass substrate 7. The ultraviolet rays 15 are applied only to a predetermined area including the microlenses 3.

The capillary (dispenser) 1 is placed between the semiconductor chip 1 and the glass substrate 7 while irradiating the ultraviolet rays 15.
1 supplies an insulating thermo-ultraviolet curing resin 12. The resin portion 12a in the thermo-ultraviolet curable resin 12 at the boundary between the region irradiated with ultraviolet light and the region not irradiated with ultraviolet light is cured.

Next, the light shielding mask 14 is removed, and FIG.
As shown in (F), a first electromagnetic wave (for example, ultraviolet light) 1
7 is applied to the entire surface of the glass substrate 7 from below. The thermo-ultraviolet curable resin 12 is cured by irradiating ultraviolet rays 17 to portions not covered with the electrodes 6.

Next, as shown in FIG. 5 (G), a second electromagnetic wave (for example, infrared rays) 16 is applied to the entire surface of the glass substrate 7 from below. By irradiating the infrared ray 16, the entire thermo-ultraviolet curable resin 12 is heated and cured. Electrode 6
Although the infrared ray 16 is not irradiated to the shaded portion, the thermo-ultraviolet curable resin 12 is cured by heat conduction through the electrodes 6 and the like.

After the lapse of a predetermined time, the irradiation of the infrared ray 16 is stopped, and as shown in FIGS. 5H and 7F, a semiconductor device in which the entire thermo-ultraviolet curable resin 12 is cured is completed. A hollow portion for accommodating the microlenses 3 is formed inside the thermo-ultraviolet curable resin 12.

As shown in FIG. 5 (I), the irradiation step of the first electromagnetic wave (ultraviolet ray) 17 shown in FIG. 5 (F) and the second electromagnetic wave (infrared ray) 16 shown in FIG. The irradiation step may be performed simultaneously.

FIGS. 8A to 8C are plan views of the semiconductor device showing the steps of manufacturing the semiconductor device according to the third embodiment of the present invention. First, FIGS. 6A to 6C and FIG.
Step (D) is performed.

Next, as shown in FIG. 8A, a dispenser 11 is provided between the semiconductor chip 1 and the glass substrate 7 while irradiating ultraviolet rays from below the glass substrate 7 through a light-shielding mask having openings of a predetermined pattern. From light thermosetting resin 1
Supply 2. However, the pattern of the light-shielding mask has an opening corresponding to the ventilation hole area 21a, and the ultraviolet light is
1 and the vent area 21a. Light thermosetting resin 1
2 cures where it is about to enter regions 21 and 21a. By providing the ventilation holes 21a, an increase in the internal pressure of the hollow portion 21 can be prevented, and the shape of the hollow portion 21 can be prevented from being broken.

Next, as shown in FIG. 8B, the entire thermo-ultraviolet curable resin 12 is cured by heating. Vent 21
Since a can freely enter and exit the gas, an increase in the internal pressure of the hollow portion 21 due to this heating can be prevented.

Next, as shown in FIG.
1a, a photothermosetting resin 12a is dropped,
a is irradiated with light to be cured. The ventilation hole 21a is closed by the photothermosetting resin 12a. The hollow portion 21b is surrounded by the photo-thermosetting resins 12 and 12a. A semiconductor device having the hollow portion 21b is completed.

FIGS. 9A to 9F and FIGS. 10G to 10G.
(K) is a view showing a step of manufacturing the semiconductor device according to the fourth embodiment of the present invention; 9 (A) to 9 (F), FIG.
11G to 11K are cross-sectional views of the semiconductor device, and FIG.
FIGS. 12A to 12F are plan views of corresponding semiconductor devices.

As shown in FIGS. 9A and 11A, a transparent flexible (resin) substrate 7 having an electrode 6 formed on the surface is prepared. The flexible substrate 7 is, for example, a polyester film. The electrode 6 has an external connection electrode 6a, a semiconductor chip connection electrode 6c, and a wiring 6b connecting the electrodes 6a and 6b. Flexible substrate 7
Is easier to connect to an external circuit (for example, an image signal processing circuit) than a glass substrate.

Next, as shown in FIGS. 9B and 11B, the conductive resin 5 is formed on the semiconductor chip connecting electrodes 6c.
Is applied.

As shown in FIGS. 9C and 11C, a semiconductor chip 1 having a microlens 3 and a bonding pad 2 is prepared as in FIG. 1A.

Next, as shown in FIGS. 9 (D) and 11 (D), FIG.
The semiconductor chip 1 of (C) is placed and heated. The conductive resin 5 is cured by heat, and electrically connects the bonding pads 2 on the semiconductor chip 1 to the electrodes 6 on the flexible substrate 7.

Next, as shown in FIG. 9 (E) and FIG. 11 (E), light 15
Is irradiated from below the flexible substrate 7. Light 15 is
Irradiation is performed on the hollow area 21 and the vent area 21a.

While irradiating the light 15, the photothermosetting resin 12 is supplied from the dispenser 11 between the semiconductor chip 1 and the flexible substrate 7. Resin portion 12 in photothermosetting resin 12 approaching hollow region 21 and vent region 21a
a is cured.

Next, the light-shielding mask 14 is removed, and FIG.
11 (F) and FIG. 11 (F), the light 17 is applied to the entire surface of the flexible substrate 7 from below. A portion of the photothermosetting resin 12 not covered with the electrode 6 is irradiated with light 17 and is cured. Next, as shown in FIG.
The irradiation of No. 7 is completed.

Next, as shown in FIG. 12 (G), a reinforcing transparent glass substrate 24 is prepared, and FIG. 10 (H) and FIG.
As shown in (H), a photo-thermosetting resin 23 is applied on a glass substrate 24.

Next, as shown in FIGS. 10 (I) and 12 (I), the glass substrate 24
To adhere. The glass substrate 24 mechanically reinforces the flexible substrate 7. The photothermosetting resin 23 is interposed between the flexible substrate 7 and the glass substrate 24, and a part thereof protrudes on both sides.

Next, as shown in FIGS. 10J and 12J, light 25 is irradiated from the lower surface of the glass substrate 24. Since the glass substrate 24 and the flexible substrate 7 are transparent, the light 25 is transmitted. The light-cured resin 23 and the uncured light-cured resin 12 irradiated with the light 25 are cured.

Next, as shown in FIGS. 10 (K) and 12 (K), heat 26 is applied to the photothermosetting resins 12 and 23.
Allow the whole to cure. By bonding the reinforcing glass substrate 24 to the flexible substrate 7, the mechanical strength can be increased. In addition, the use of the flexible substrate 7 facilitates connection with an external circuit.

In the above embodiment, first, the semiconductor chip 1 is fixed to the flexible substrate 7, and then the reinforcing glass substrate 2 is fixed.
The example in which 4 is fixed to the flexible substrate 7 has been described. Next, an example in which the reinforcing glass substrate 24 is first fixed to the flexible substrate 7 and then the semiconductor chip 1 is fixed to the flexible substrate 7 will be described.

FIGS. 13 (A) to 13 (G), FIG. 14 (H),
(I) is a plan view of the semiconductor device, showing a manufacturing step of the semiconductor device according to the fifth embodiment of the present invention.

As shown in FIG. 13A, the electrode 6
A transparent flexible substrate 7 on which a, 6b and 6c are formed is prepared.

As shown in FIG. 13B, a reinforcing glass substrate 24 is prepared, and as shown in FIG. 13C, a photothermosetting resin 23 is applied on the glass substrate 24.

Next, as shown in FIG. 13D, a glass substrate 24 is adhered to the lower surface of the flexible substrate 7 with the photothermosetting resin 23 interposed therebetween. Next, light is irradiated from the lower surface of the glass substrate 24 to cure the photothermosetting resin 23.

Next, as shown in FIG. 13E, a conductive resin 5 is applied on the electrode 6c for connecting a semiconductor chip.

Next, as shown in FIG. 13F, a semiconductor chip 1 having a bonding pad 2 and a microlens 3 is prepared.

Next, as shown in FIG.
The semiconductor chip 1 shown in FIG. 13F is placed on the flexible substrate 7 shown in FIG. The conductive resin 5 is cured by heat, and the bonding pad 2 and the electrode 6 are electrically connected.

Next, as shown in FIG. 14H, light is irradiated from below the flexible substrate 7 through a light-shielding mask of a predetermined pattern having an opening corresponding to the vent area 21a.

While irradiating light, a photothermosetting resin 12 is supplied between the semiconductor chip 1 and the glass substrate 7. The portion 12a of the photothermosetting resin 12 which has entered the hollow region 21 and the vent region 21a is cured.

Next, the light-shielding mask is removed, and light is applied to the entire surface of the flexible substrate 7 from below. Light thermosetting resin 1
In No. 2, the portion irradiated with light is cured.

Next, a photothermosetting resin is dropped into the air hole 21a, and the air hole 21a is closed as shown in FIG.
The semiconductor device is completed by irradiating light to cure the photothermosetting resin.

FIGS. 15 (A) to 15 (D) and FIGS. 16 (E) to 16 (E)
(G) is a sectional view of the semiconductor device, showing a manufacturing step of the semiconductor device according to the sixth example of the present invention.

As shown in FIG. 15A, an electrode 6 is formed on a transparent substrate (for example, a glass substrate) 7.

Next, as shown in FIG.
The conductive resin 5 is applied to the upper part.

Next, as shown in FIG. 15C, a semiconductor chip 1 having a bonding pad 2 and a microlens 3 is prepared.

Next, as shown in FIG. 15D, a blocking portion 31 for preventing the resin from flowing is formed on the glass substrate 7 by photolithography or printing. Blocking unit 31
Is, for example, a photosensitive polyimide, and does not necessarily have to be transparent. The height of the blocking portion 31 is 1 to 80 μm. The gap between the glass substrate 7 and the semiconductor chip 1 is 20
８０80 μm.

Next, the semiconductor chip 1 shown in FIG. 15C is placed on the glass substrate 7 shown in FIG. 15B and heated. The conductive resin 5 is cured, and the bonding pad 2 and the electrode 6 are electrically connected. The upper part of the blocking part 31 does not necessarily have to be in contact with the semiconductor chip 1.

Next, as shown in FIG. 16E, light 15 is irradiated from below the glass substrate 7 through a light-shielding mask 14 having openings of a predetermined pattern. The boundary of the region to be irradiated with light is located around the blocking section 31.

While irradiating the light 15, the photothermosetting resin 12 is supplied from the dispenser 11 between the semiconductor chip 1 and the glass substrate 7. The flow of the photothermosetting resin 12 is blocked by the blocking portion 31 and is blocked around the blocking portion 31. The photothermosetting resin 12 around the blocking portion 31 is hardened by irradiation with the light 15. By providing the blocking portion 31, the resin 1
2 can be prevented, and the resin 12 can be easily cured in a desired area.

Next, the light-shielding mask 14 is removed, and FIG.
As shown in (F), the light 17 is applied to the entire surface of the glass substrate 7 from below. The part in the photothermosetting resin 12 that has received the light 17 is cured.

Next, as shown in FIG.
Is added, the entire photothermosetting resin 12 is heated and cured, thereby completing a semiconductor device having a hollow portion. By providing the above-described blocking portion 31, the positional accuracy of the hollow portion can be improved.

FIGS. 17A to 17D and FIGS. 18E to 18E
(G) is a sectional view of the semiconductor device, showing a manufacturing step of the semiconductor device according to the seventh embodiment of the present invention.

As shown in FIG. 17A, an electrode 6 and a transparent blocking film 32 are formed on a transparent substrate (eg, a glass substrate) 7. The transparent blocking film 32 has a resin-phobic property for preventing the intrusion of resin, and is, for example, a C-F-H polymer or Teflon.

A specific method for forming the transparent blocking film 32 will be described. First, while supplying a mixed gas of C ₂ F ₄ + H ₂ ,
By performing the plasma discharge, C-
An FH polymer film is formed. Next, a photoresist having a predetermined pattern is formed on the transparent blocking film 32 by photolithography, and a part of the polymer film is sputtered by irradiating an Ar ion beam. A part of the polymer film is removed, and a transparent blocking film 32 made of a polymer film having a predetermined pattern is formed. After that, the photoresist is removed.

Next, as shown in FIG.
The conductive resin 5 is applied to the upper part.

Next, as shown in FIG. 17C, a semiconductor chip 1 having a bonding pad 2 and a microlens 3 is prepared.

Next, as shown in FIG.
The semiconductor chip 1 shown in FIG. 17C is placed on the glass substrate 7 shown in FIG. The conductive resin 5 is cured, and the bonding pad 2 and the electrode 6 are electrically connected.

Next, as shown in FIG. 18E, light 15 is irradiated from below the glass substrate 7 through a light shielding mask 14 having openings of a predetermined pattern. The boundary of the region irradiated with light is located around the boundary of the blocking film 32. The boundary may be inside or outside the blocking film 32. Transparent blocking film 3
2 transmits the light 15.

While irradiating the light 15, the photothermosetting resin 12 is supplied from the dispenser 11 between the semiconductor chip 1 and the glass substrate 7. The flow of the photothermosetting resin 12 is hindered by the blocking film 32. The photothermosetting resin 12 around the blocking film 32 is cured by irradiation with the light 15. By providing the blocking film 32, the inflow of the resin 12 is prevented, and the resin 12 can be easily cured in a desired region.

Next, the light-shielding mask 14 is removed, and FIG.
As shown in (F), the light 17 is applied to the entire surface of the glass substrate 7 from below. The part in the photothermosetting resin 12 that has received the light 17 is cured.

Next, as shown in FIG.
Is added, the entire photothermosetting resin 12 is heated and cured, thereby completing a semiconductor device having a hollow portion. By providing the blocking film 32, the positional accuracy of the hollow portion can be improved.

FIGS. 19A to 19D and FIGS. 20E to
(G) is a sectional view of the semiconductor device, showing a manufacturing step of the semiconductor device according to the eighth embodiment of the present invention.

As shown in FIG. 19A, an electrode 6 is formed on a transparent substrate (for example, a glass substrate) 7.

Next, as shown in FIG.
The conductive resin 5 is applied to the upper part.

Next, as shown in FIG. 19C, a semiconductor chip 1 having a bonding pad 2 and a microlens 3 is prepared. Next, a blocking portion 34 is provided around the microlens 3 on the lower surface of the semiconductor chip 1. The blocking portion 34 has resin-phobic properties, for example, photosensitive polyimide, and does not necessarily have to be transparent. The blocking unit 34
The width (horizontal direction in the figure) is 20 to 200 μm, and the thickness (vertical direction in the figure) is 1 to 50 μm. The thickness of the bonding pad 2 is 5 to 200 μm.

Next, as shown in FIG.
The semiconductor chip 1 shown in FIG. 19C is placed on the glass substrate 7 shown in FIG. The conductive resin 5 is cured, and the bonding pad 2 and the electrode 6 are electrically connected.

Next, as shown in FIG. 20E, light 15 is applied to the glass substrate 7 through a light-shielding mask 14 having a predetermined pattern.
Irradiate from below. The boundary of the region to be irradiated with light is located around the blocking section 34.

While irradiating the light 15, the photothermosetting resin 12 is supplied from the dispenser 11 between the semiconductor chip 1 and the glass substrate 7. The flow of the photothermosetting resin 12 is prevented by the blocking portion 34. The photothermosetting resin 12 around the blocking portion 34 is cured by irradiation with the light 15. The resin 12 can be cured in a desired area.

Next, the light shielding mask 14 is removed, and FIG.
As shown in (F), the light 17 is applied to the entire surface of the glass substrate 7 from below. The part in the photothermosetting resin 12 that has received the light 17 is cured.

Next, as shown in FIG.
Is added, the entire photothermosetting resin 12 is heated and cured, thereby completing a semiconductor device having a hollow portion. By providing the blocking portion 34, the positional accuracy of the hollow portion can be improved.

Instead of providing the blocking portion 34 on the semiconductor chip 1, the blocking portion 34 may be provided on the glass substrate 7 as shown in FIG. Further, the blocking portion 34 may be provided on both the semiconductor chip 1 and the glass substrate 7.

In the above, the method of curing the resin by irradiating an electromagnetic wave has been described. Electromagnetic waves may adversely affect a given semiconductor chip, and depending on the type of semiconductor chip, it may not be desirable to use electromagnetic waves. Next, a method of curing a resin without using an electromagnetic wave will be described.

FIGS. 22 to 29 show steps of manufacturing a semiconductor device according to the ninth embodiment of the present invention.

FIG. 22 is a sectional view of a semiconductor device, and FIG. 23 is a bottom view thereof. The semiconductor chip 1 has a microlens 3, a convex electrode 2, and a barrier 35. The convex electrode 2 has a height GP1 of 2 to 200 μm and is formed by stacking Cu and Au on a bonding pad. Barrier 35
Is an epoxy resin, for example, and is formed by a screen printing method. Instead of screen printing, layer formation,
It may be formed by photolithography and etching.

The barrier 35 may completely surround the periphery of the microlens 3 as shown in FIG.
As shown in (2), a part of the barrier 35 may be removed to provide the ventilation hole 36.

Next, as shown in FIG.
The electrodes 6a, 6b, 6c, 6d are formed thereon. Electrode 6a
Is an electrode for connecting an external circuit, the electrode 6c is an electrode for connecting a semiconductor chip, and the electrode 6b is a wiring for connecting the electrodes 6a and 6c. The electrode 6d is a ground electrode (GN
D).

Next, as shown in FIG. 26, a conductive resin (adhesive) 5 is applied on the electrode 6c (FIG. 25), and the semiconductor chip 1 of FIG. 22 is mounted on the glass substrate 7 of FIG. At this time, positioning is performed so that the protruding electrode 2 and the electrode 6c are in contact with each other.

Next, as shown in FIG. 27, heating is performed with the convex electrode 2 and the electrode 6c in contact with each other. The conductive resin 5 is cured, and the convex electrode 2 and the electrode 6 are electrically connected. The barrier 35 contacts the glass substrate 7 or the electrode 6c.

Next, as shown in FIG. 28, a thermosetting resin 12 is supplied from a dispenser 11 between the semiconductor chip 1 and the glass substrate 7. The thermosetting resin 12 is blocked by the barrier 35 and does not enter the inside of the barrier 35.

Next, as shown in FIG. 29, the thermosetting resin 12 can be cured without using electromagnetic waves by leaving or heating at room temperature, for example, for 24 hours. The gap GP2 between the semiconductor chip 1 and the glass substrate 7 is, for example, 10 to 200 μm. With the above, the gap GP2
The semiconductor device having the hollow portion is completed.

FIGS. 30A and 30B are cross-sectional views of the semiconductor chip 1. FIG. The micro lens 3 provided on the semiconductor chip 1 will be described. The microlens 3 may have a hemispherical surface as shown in FIG. 30A, or may have a triangular prism shape as shown in FIG. The shape of the microlens 3 is not limited as long as it has a light collecting function.

FIG. 31 is a sectional view of a semiconductor device. The micro lens 3 may be provided on the transparent substrate 7. In that case, the microlenses 3 need not be provided on the semiconductor chip 1. The external light 42 passes through the glass substrate 7, is condensed by the microlenses 3, and is irradiated on the semiconductor chip 1. The semiconductor chip 1 generates an image signal according to the received light 42, for example.

The method for manufacturing one semiconductor device has been described above. Next, a method of mass-producing the above semiconductor device will be described.

FIG. 32 shows a transparent substrate (for example, a glass substrate).
FIG. 7 is a plan view of FIG. The glass substrate 7 is, for example, 150 m long.
m, width 150 mm, thickness 1 mm. This glass substrate 7 has an area of 10 × 10 blocks. One block is 15 mm long, 15 mm wide, and 1 mm thick.

The semiconductor chip 1 is mounted on each block by the above method. A total of 10 × 10 semiconductor chips 1 are mounted on the glass substrate 7. One semiconductor chip 1
Is 8 mm long and 6 mm wide, for example.

Next, a resin is supplied between the semiconductor chip 1 and the glass substrate 7 and temporarily fixed by ultraviolet rays or the like. Thereafter, the glass substrate 7 is placed in an oven at 150 ° C. for 30 minutes,
The resin is cured, and the semiconductor chip 1 is fixed to the glass substrate 7.

Next, the glass substrate 7 is cut along the block boundary line 43 with a cutter to separate each semiconductor device. Thus, 100 semiconductor devices are completed.

The method for manufacturing a semiconductor device has been described above. Next, the above semiconductor device (for example, a solid-state imaging device) is mounted on a mounting substrate having an external circuit (for example, an image signal processing circuit).
How to implement is described.

FIG. 33A is a cross-sectional view of a device in which a semiconductor device is mounted on a mounting board, and FIG.
It is 33B-33B sectional drawing of (A).

Glass substrate 7 to which semiconductor chip 1 is bonded
Will be described below. Mounting board 3
9 has an electrode 38. The glass substrate 7 has an electrode 6. The spacer electrode 37 electrically connects the electrode 38 and the electrode 6.

FIG. 34A is a plan view of the spacer electrode 37, and FIG. 34B is a side view thereof. For example, a predetermined electrode 41 is formed on the surface of ceramic or glass epoxy resin.
Is formed, the spacer electrode 37 can be formed. The electrode 41 is, for example, Au plated. The upper electrode 41 and the corresponding lower electrode 41 are connected through wiring on the side surface. The electrode 41 on the upper surface is
The electrode 41 on the lower surface is connected to the electrode 6 on the glass substrate 7.
It is connected to the electrode 38 of the mounting board 39.

The length of the spacer electrode 37 is LL1.
(For example, 15 mm) and the horizontal length is LL8 (for example, 17.
4 mm) and the thickness is LL7 (for example, 1.0 mm).
The hollow portion of the spacer electrode 37 has a vertical length of LL6 (for example, 13.4 mm) and a horizontal length of LL5 (for example, 11 m).
m). Each electrode 41 has a vertical length of LL4 (for example, 1.5 mm) and a horizontal length of LL3 (for example, 0.7 mm).
It is. The pitch between the electrodes 41 is LL2 (for example, 1.27
mm).

FIG. 33 (C) substitutes for the cross-sectional view of FIG. 33 (B) and is a cross-sectional view of FIG. 33 (A) taken along line 33B-33B. Two spacer electrodes 37 are provided on both sides of the semiconductor chip 1.

FIG. 35A shows one spacer electrode 37.
35 (B) is a side view thereof. FIG. The spacer electrode 37 is in the shape of a quadrangular prism.
1 is provided.

The spacer electrode 37 has a length LL15 (for example, 17.4 mm), a width LL11 (for example, 2 mm),
The thickness is LL14 (for example, 1.0 mm). Electrode 41
Has a width of LL13 (for example, 0.7 mm). Electrode 4
The pitch between them is LL12 (for example, 1.27 mm).

According to this embodiment, a semiconductor chip having a microlens can be mounted on a transparent substrate.
The semiconductor chip is, for example, a solid-state imaging device. Light can be incident on the microlenses of the semiconductor chip via the transparent substrate. If the transparent substrate is formed of glass, C
OG can be realized. COG is used when a semiconductor chip is packaged by wire bonding (see FIG. 3).
Compared with (C)), it can be thinner and smaller. Further, mounting cost can be reduced.

The present invention has been described in connection with the preferred embodiments.
The present invention is not limited to these. For example, it will be apparent to those skilled in the art that various modifications, improvements, combinations, and the like can be made.

[0144]

As described above, according to the present invention,
When the semiconductor chip has a microlens, the function of the microlens can be maintained by filling the space between the semiconductor chip and the transparent substrate with an insulating member while making the microlens portion hollow.

When the present invention is applied to a semiconductor chip having a vibrating element such as a micromachine or an acceleration sensor, the vibrating element can vibrate in the hollow portion, and the function of the element can be maintained. In addition, various semiconductor chips can be mounted on the transparent substrate.

By using a glass substrate as the transparent substrate, a chip-on-glass semiconductor device can be realized. With the chip-on-glass structure, it is possible to make the semiconductor chip thinner and smaller than in the case where the semiconductor chip is packaged by wire bonding. Further, cost can be reduced.

[Brief description of the drawings]

FIGS. 1A to 1E are diagrams showing a manufacturing process of a semiconductor device according to a first embodiment of the present invention.

2 (F) to 2 (H) are views showing a manufacturing process of the semiconductor device following FIG. 1 (E).

FIGS. 3A and 3B are diagrams showing a chip-on-glass, and FIG. 3C is a diagram showing a wire-bonded semiconductor chip.

FIGS. 4A to 4E are cross-sectional views of a semiconductor device showing steps of manufacturing the semiconductor device according to a second embodiment of the present invention.

5 (F) to 5 (I) are cross-sectional views of the semiconductor device showing the steps of manufacturing the semiconductor device following FIG. 4 (E).

6 (A) to 6 (C) are plan views of the semiconductor device shown in FIGS. 4 (A) to 4 (C).

FIGS. 7D to 7F are plan views of the semiconductor device shown in FIGS. 4D and 4E and FIGS. 5F to 5H.

FIGS. 8A to 8C are plan views of a semiconductor device, showing manufacturing steps of a semiconductor device according to a third embodiment of the present invention.

FIGS. 9A to 9F are cross-sectional views of a semiconductor device showing steps of manufacturing a semiconductor device according to a fourth embodiment of the present invention.

FIGS. 10G to 10K are cross-sectional views of the semiconductor device, showing a manufacturing process of the semiconductor device following FIG. 9F.

FIGS. 11A to 11F are FIGS. 9A to 9F; FIGS.
FIG. 11F is a plan view of the semiconductor device shown in FIG. 10G.

12 (G) to 12 (K) show FIGS. 10 (H) to 10 (H).
It is a top view of the semiconductor device shown to (K).

FIGS. 13A to 13G are plan views of the semiconductor device, showing manufacturing steps of the semiconductor device according to the fifth embodiment of the present invention.

14 (H) and 14 (I) are plan views of the semiconductor device, showing a manufacturing process of the semiconductor device following FIG. 13 (G).

FIGS. 15A to 15D are cross-sectional views of a semiconductor device showing steps of manufacturing a semiconductor device according to a sixth embodiment of the present invention.

FIGS. 16 (E) to 16 (G) are cross-sectional views of the semiconductor device, showing a manufacturing step of the semiconductor device following FIG. 15 (D).

FIGS. 17A to 17D are cross-sectional views of a semiconductor device showing the steps of manufacturing the semiconductor device according to the seventh embodiment of the present invention.

18 (E) to 18 (G) are cross-sectional views of the semiconductor device, illustrating a manufacturing step of the semiconductor device following FIG. 17 (D).

FIGS. 19A to 19D are cross-sectional views of a semiconductor device showing the steps of manufacturing the semiconductor device according to the eighth embodiment of the present invention.

FIGS. 20 (E) to 20 (G) are cross-sectional views of the semiconductor device, showing a manufacturing step of the semiconductor device following FIG. 19 (D).

FIG. 21 is a cross-sectional view of another semiconductor device.

FIG. 22 is a sectional view of the semiconductor device, showing a manufacturing step of the semiconductor device according to the ninth embodiment of the present invention.

FIG. 23 is a bottom view of the semiconductor device shown in FIG. 22;

FIG. 24 is a bottom view of another semiconductor device.

FIG. 25 is a plan view of a transparent substrate.

FIG. 26 is a cross-sectional view of the semiconductor device, illustrating a manufacturing step of the semiconductor device following FIG. 22;

FIG. 27 is a cross-sectional view of the semiconductor device, illustrating a manufacturing step of the semiconductor device, following FIG. 26;

FIG. 28 is a cross-sectional view of the semiconductor device, illustrating a manufacturing step of the semiconductor device following FIG. 27;

FIG. 29 is a cross-sectional view of the semiconductor device, illustrating a manufacturing step of the semiconductor device following FIG. 28;

FIGS. 30A and 30B are cross-sectional views of a semiconductor chip having a microlens.

FIG. 31 is a cross-sectional view of another semiconductor device.

FIG. 32 is a plan view of a transparent substrate on which a plurality of semiconductor chips are mounted.

33A is a cross-sectional view of a mounting board on which a semiconductor device is mounted, and FIGS. 33B and 33C are FIGS.
It is 33B-33B sectional drawing of (A).

FIG. 34 (A) is a plan view of a spacer electrode, and FIG. 34 (B) is a side view thereof.

FIG. 35 (A) is a plan view of another spacer electrode, and FIG. 35 (B) is a side view thereof.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor chip 2 Electrode pad 3 Micro lens group 4 Gold ball 5 Conductive resin 6 Electrode 7 Glass substrate 11 Capillary 12 Thermal ultraviolet curing resin 13 Hollow part 14 Light shielding mask 15 Ultraviolet light 16 Heat 17 Ultraviolet light 21 Hollow part 21a Vent hole 22 Resin 23 Photothermosetting resin 24 Reinforcing glass substrate 25 Light 26 Heat 31, 34 Blocking part 32 Blocking film 35 Barrier 36 Vent hole 37 Spacer electrode 38 Electrode 39 Mounting substrate 41 Electrode 42 Light 43 Block boundary 51 Package 52 Glass plate 53 Wire 54 Lead

Claims (37)

[Claims] 1. A semiconductor chip having electrodes, a transparent substrate provided facing the semiconductor chip and having electrodes, and a conductive member electrically connecting the electrodes of the semiconductor chip and the electrodes of the transparent substrate. A semiconductor device comprising: an insulating member that is partially hollow between the semiconductor chip and the transparent substrate and is filled in another portion. 2. The semiconductor device according to claim 1, wherein said insulating member is filled between said semiconductor chip and said transparent substrate so as to surround said hollow portion. 3. The semiconductor device according to claim 1, wherein the insulating member covers the conductive member. 4. The semiconductor device according to claim 1, wherein said insulating member covers at least 15% of an area of a surface of said semiconductor chip facing said transparent substrate. 5. The semiconductor device according to claim 1, wherein said insulating member covers at least 0.35 mm from an end of a surface of said semiconductor chip facing said transparent substrate. 6. The insulating member according to claim 1, wherein the insulating member includes a resin.
6. The semiconductor device according to any one of 5. 7. The semiconductor device according to claim 1, wherein said semiconductor chip is a semiconductor chip on which a micro lens is formed. 8. The semiconductor device according to claim 7, wherein said semiconductor chip is a solid-state image sensor. 9. The semiconductor device according to claim 1, wherein said transparent substrate is a glass substrate. 10. The semiconductor device according to claim 1, further comprising a reinforcing transparent substrate provided on a surface of said transparent substrate opposite to a surface facing said semiconductor chip. 11. The semiconductor device according to claim 10, wherein said transparent substrate is made of resin, and said reinforcing transparent substrate is made of glass. 12. The semiconductor device according to claim 1, further comprising a blocking member provided on said transparent substrate or said semiconductor chip for blocking said insulating member. 13. The semiconductor device according to claim 12, wherein said blocking member is provided so as to surround an entire periphery of a region on said transparent substrate corresponding to said hollow portion. 14. The blocking member is made of resin.
Or the semiconductor device according to 13. 15. The method according to claim 12, wherein the blocking member is transparent.
15. The semiconductor device according to any one of items 14 to 14. 16. A mounting substrate provided opposite to the transparent substrate with the semiconductor chip interposed therebetween and electrically connected to an electrode of the transparent substrate.
6. The semiconductor device according to any one of 5. 17. The semiconductor device according to claim 16, further comprising a spacer electrode for electrically connecting an electrode of said transparent substrate and said mounting substrate. 18. A step of preparing a semiconductor chip having electrodes; (b) a step of preparing a transparent substrate having electrodes; and (c) causing the semiconductor chip and the transparent substrate to face each other.
Electrically connecting the electrodes of the semiconductor chip and the electrodes of the transparent substrate; and (d) pouring a resin between the semiconductor chip and the transparent substrate, thereby forming a gap between the semiconductor chip and the transparent substrate. Forming a hollow part in a part of the space. 19. The step (d) includes: pouring an electromagnetic wave curing resin between the semiconductor chip and the transparent substrate while irradiating a predetermined region with an electromagnetic wave; and curing the electromagnetic wave curing resin by the electromagnetic wave irradiation. 2. A step of forming a hollow part in a part between the semiconductor chip and the transparent substrate.
9. The method for manufacturing a semiconductor device according to item 8. 20. (e) Before the step (d), a step of forming a blocking member on the semiconductor chip or the transparent substrate is included, and at least a part of the resin poured in the step (d) is the resin. 19. The method of manufacturing a semiconductor device according to claim 18, wherein the blocking is performed by a blocking member. 21. The method according to claim 19, wherein the step (d) is a step of irradiating a predetermined region with ultraviolet rays. 22. The semiconductor device according to claim 19, further comprising the step of: (e) irradiating an electromagnetic wave to the whole of the electromagnetic wave curing resin after the step (d) to cure the entire electromagnetic wave curing resin. Production method. 23. The method of manufacturing a semiconductor device according to claim 22, wherein the step (e) is a step of irradiating an electromagnetic wave having the same wavelength as the electromagnetic wave irradiated in the step (d). 24. The method of manufacturing a semiconductor device according to claim 22, wherein the step (e) is a step of irradiating an electromagnetic wave having a different wavelength from the electromagnetic wave irradiating in the step (d). 25. The method according to claim 24, wherein the step (d) is a step of irradiating ultraviolet rays, and the step (e) is a step of irradiating infrared rays. 26. The method of manufacturing a semiconductor device according to claim 22, wherein said step (e) is a step of simultaneously irradiating two types of electromagnetic waves having the same wavelength and a different wavelength from the electromagnetic waves irradiated in said step (d). 27. The method according to claim 26, wherein the step (e) is a step of simultaneously irradiating ultraviolet rays and infrared rays. 28. The step (d) is a step of pouring a thermosetting resin, and (e) heating the thermosetting resin after the step (d) to form the entire thermosetting resin. 20. The step of curing
The manufacturing method of the semiconductor device described in the above. 29. The method according to claim 28, wherein said step (e) is a step of heating by irradiating infrared rays. 30. The method of manufacturing a semiconductor device according to claim 19, further comprising the step of: (e) bonding a reinforcing transparent substrate to a surface of the transparent substrate opposite to a surface facing the semiconductor chip. 31. (e) Before the step (d), the method further comprises a step of forming a blocking member on the semiconductor chip or the transparent substrate, and at least a part of the electromagnetic wave curing resin poured in the step (d) is included. 20. The method of manufacturing a semiconductor device according to claim 19, wherein the barrier is stopped by the blocking member. 32. The semiconductor device according to claim 31, further comprising: (e) electrically connecting a mounting substrate to an electrode of the transparent substrate so as to face the transparent substrate with the semiconductor chip interposed therebetween. Manufacturing method. 33. The method according to claim 32, wherein in the step (e), an electrode of the transparent substrate is electrically connected to the mounting substrate using a spacer electrode. 34. The method of manufacturing a semiconductor device according to claim 19, wherein in the step (d), the electromagnetic wave curing resin is poured so as to cover a connection portion between the electrode of the semiconductor chip and the electrode of the transparent substrate. 35. (a) a step of preparing a plurality of semiconductor chips having electrodes; (b) a step of preparing one transparent substrate having electrodes; and (c) the plurality of semiconductor chips and the one transparent substrate. Opposing a substrate and electrically connecting the electrodes of the plurality of semiconductor chips and the electrodes of the one transparent substrate; and (d) pouring a resin between each of the semiconductor chips and the transparent substrate; A method for manufacturing a semiconductor device, comprising: a step of forming a hollow portion in a part between each of the semiconductor chips and the transparent substrate; and (e) a step of cutting the transparent substrate for each of the semiconductor chips. 36. In the step (d), an electromagnetic wave curing resin is poured between each of the semiconductor chips and the transparent substrate while irradiating a predetermined area with an electromagnetic wave, and the electromagnetic wave curing resin is cured by the electromagnetic wave irradiation. 36. The method of manufacturing a semiconductor device according to claim 35, wherein the step of forming a hollow portion in a part between each of the semiconductor chips and the transparent substrate is performed. 37. (f) Before the step (d), a step of forming a blocking member on each of the semiconductor chips or the transparent substrate is included, and at least a part of the resin poured in the step (d) is included. 36. The method of manufacturing a semiconductor device according to claim 35, wherein the barrier is stopped by the blocking member.