JPH11121196A - Microwave plasma processing equipment - Google Patents

Abstract

(57) [Problem] To provide a microwave plasma processing apparatus in which the size of the entire apparatus can be reduced as much as possible even if the diameter of the reactor is large, and which can be installed in a small space. SOLUTION: An antenna 11 is provided on an upper surface of a cover member 10, and the antenna 11 is fixed to an upper surface of the cover member 10, and has a U-shaped waveguide antenna section 12 in cross section, and a cover. A plurality of slits 15, 15,... Opened in a portion of the member 10 facing the waveguide antenna unit 12. One end of the waveguide antenna section 12 is connected to a waveguide 21 connected to a microwave oscillator 20, and the other end of the waveguide antenna section 12 is closed. One end of the waveguide antenna section 12 is linear, and the other end is a curved section 12a formed to have an appropriate curvature such as an arc or a substantially spiral shape. The opening positions of the slits 15, 15,... Are determined at n · λg / 2 from the closed end of the waveguide antenna unit 12.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for performing processing such as etching or ashing on a semiconductor substrate, a glass substrate for a liquid crystal display, or the like by using plasma generated by using microwaves.

[0002]

2. Description of the Related Art Plasma generated by giving energy to a reaction gas from the outside is widely used in a manufacturing process of an LSI or an LCD. In particular, the use of plasma has become an indispensable basic technology in the dry etching process. In general, a microwave of 2.45 GHz is used as an excitation means for generating plasma,
In some cases, 6 MHz RF (Radio Frequency) is used. The former has the advantage that a higher-density plasma can be obtained than the latter, and that no electrodes are required for plasma generation, and thus contamination from the electrodes can be prevented. However, in a plasma processing apparatus using microwaves, the area of the plasma generation region is increased,
In addition, it has been difficult to generate plasma so that the density becomes uniform. However, since the microwave plasma processing apparatus has various advantages as described above, it has been required to realize processing of a large-diameter semiconductor substrate, an LCD glass substrate, and the like by the apparatus. To satisfy this demand, the applicant of the present application has disclosed Japanese Patent Application Laid-Open No. 62-5600,
JP-A-62-99481 proposes the following apparatus.

[0003] FIG.
FIG. 8 is a side sectional view showing a microwave plasma processing apparatus of the same type as the apparatus disclosed in JP-A-62-99481, and FIG.
FIG. 2 is a plan view of the plasma processing apparatus shown in FIG. The entire rectangular box-shaped reactor 31 is formed of aluminum. A microwave introduction window is opened in the upper part of the reactor 31, and the microwave introduction window is hermetically sealed by a sealing plate 34. The sealing plate 34 is formed of a dielectric material such as quartz glass or alumina, which has heat resistance and microwave permeability and has small dielectric loss.

[0004] A rectangular box-shaped cover member 40 for covering the upper part of the reactor 31 is connected to the reactor 31. A dielectric line 41 is attached to a ceiling portion in the cover member 40,
An air gap 43 is formed between the dielectric line 41 and the sealing plate. The dielectric line 41 is formed by molding a dielectric such as a fluororesin such as Teflon (registered trademark), a polyethylene resin, or a polystyrene resin into a plate shape having a protrusion at a vertex of a substantially pentagon formed by combining a rectangle and a triangle. A waveguide 21 in which the convex portion is connected to the peripheral surface of the cover member 40.
It is fitted inside. A microwave oscillator 20 is connected to the waveguide 21, and the microwave oscillated by the microwave oscillator 20 is incident on the projection of the dielectric line 41 by the waveguide 21.

As described above, the base end side of the convex portion of the dielectric line 41 is formed into a tapered portion 41a having a substantially triangular shape in plan view, and the microwave incident on the convex portion follows the tapered portion 41a. And is spread in the width direction thereof and propagates throughout the dielectric line 41. The microwave is reflected on the end face of the cover member 40 facing the waveguide 21, and the incident wave and the reflected wave are superimposed to form a standing wave on the dielectric line 41.

[0006] The interior of the reactor 31 is a processing chamber 32,
A required gas is introduced into the processing chamber 32 from a gas introduction pipe 35 fitted in a through hole penetrating the peripheral wall of the processing chamber 32. At the center of the bottom wall of the processing chamber 32, a mounting table 33 for mounting the sample W is provided, and a high frequency power supply 37 is connected to the mounting table 33 via a matching box. An exhaust port 38 is provided on the bottom wall of the reactor 31, and the processing chamber 32 is connected to the exhaust port 38.
It is designed to exhaust shy air.

In order to perform an etching process on the surface of the sample W using such a microwave plasma processing apparatus, the inside of the processing chamber 32 is evacuated to a desired pressure by exhausting the gas through an exhaust port 38, and then a gas introduction pipe 35 is formed. To supply the reaction gas into the processing chamber 32. Next, a microwave is oscillated from the microwave oscillator 20 and introduced into the dielectric line 41 via the waveguide 21. At this time, the microwave is uniformly spread in the dielectric line 41 by the tapered portion 41a, and a standing wave is formed in the dielectric line 41. Due to this standing wave, a leakage electric field is formed below the dielectric line 41, and this is caused by the air gap 43 and the sealing plate.
The light passes through 34 and is introduced into the processing chamber 32. In this way, the microwave propagates into the processing chamber 32. This allows
Plasma is generated in the processing chamber 32, and the surface of the sample W is etched by the plasma. Thereby, even if the diameter of the reactor 31 is increased in order to process the large-diameter sample W, the microwave can be uniformly introduced to the entire region of the reactor 31 and the large-diameter sample W can be uniformly distributed. Plasma treatment can be performed.

[0008]

In the conventional microwave plasma processing apparatus, in order to uniformly spread the microwave on the dielectric line 41, the microwave projecting from the sealing plate 34 and the edge of the reactor 31 in the horizontal direction. A tapered portion 41a is provided. The tapered portion 41a has a predetermined size in accordance with the area of the dielectric line 41, that is, the diameter of the processing chamber 32. Therefore, when installing a conventional microwave plasma processing apparatus, the reactor 31
An extra horizontal space for accommodating the tapered portion 41a protruding from the peripheral edge must be secured. By the way, as the diameter of the sample W increases, a microwave plasma processing apparatus having a larger diameter of the reactor 31 is required. At this time, it is also required that the installation place of the apparatus need not be treated, that is, it can be installed in a space as narrow as possible. However, in the conventional apparatus, since the size of the tapered portion 41a is determined according to the diameter of the reactor 31, both of the above requirements cannot be satisfied.

The present invention has been made in view of the above circumstances, and has as its object to block the other end of a tubular member into which microwaves enter from one end with a closing member, and to seal the tubular member with the sealing member. An antenna having a slit opened in a portion facing the member is provided to face a surface of a sealing member for sealing a part of a container (reactor), microwaves are incident on the antenna, By providing a configuration in which microwaves are radiated to the sealing member, even if the diameter of the reactor is large, the size of the entire apparatus can be made as small as possible and a microwave plasma processing apparatus that can be installed in a small space is provided The purpose is to do.

[0010]

According to a first aspect of the present invention, there is provided a microwave plasma processing apparatus which transmits a microwave through a sealing member into a container partially sealed with a sealing member. An apparatus for generating plasma by the microwave and processing an object to be processed by the generated plasma, wherein the other end of the tubular member from which microwave is incident is closed by a closing member, and the sealing member of the tubular member is closed. An antenna having a slit opened in a portion facing the sealing member is provided so as to face the surface of the sealing member, a microwave is incident into the antenna from one end of the tubular member, and from the slit to the sealing member. It is characterized by emitting microwaves.

The microwave is incident on an antenna provided on the surface of a sealing member for sealing the opening of the container. The microwave propagates through the tubular member of the antenna, is reflected by a closing member that closes one end of the tubular member, and the incident wave and the reflected wave overlap to form a standing wave. Due to this standing wave, a current that reaches a maximum at predetermined intervals flows through the wall surface of the tubular member. A slit is formed in a portion of the tubular member facing the sealing member, and a potential difference is generated inside and outside the tubular member across the slit by the above-described current, and an electric field is radiated from the slit to the sealing member due to the potential difference. Is done. That is, the microwave propagates from the antenna to the sealing member. This microwave is transmitted through the sealing member and introduced into the container,
Plasma is generated by the microwave.

[0012] Since the microwave can be directly incident into the tubular member of the antenna in this manner, the antenna does not protrude from the container, and therefore, the horizontal dimension of the microwave plasma processing apparatus can be reduced as much as possible. Can be made smaller. On the other hand, the microwave is guided to an appropriate position on the container by the tubular member of the antenna and is radiated from the slit, so that the microwave can be uniformly introduced into the container. Furthermore, by making the inside diameter of the tubular member the required size, a standing wave of a single mode (fundamental mode) can be formed in the antenna, thereby minimizing energy loss. it can.

A microwave plasma processing apparatus according to a second invention is characterized in that, in the first invention, the tubular member is formed into a C shape or a spiral shape.

[0014] In the case of a tubular member formed in a C-shape or a spiral shape, microwaves can be guided to substantially the entire region of the container, whereby the microwaves can be uniformly introduced into the container.

According to a third aspect of the present invention, in the microwave plasma processing apparatus according to the first or second aspect, a plurality of the slits are opened at appropriate intervals from the closing member.

Since the microwave guided to an appropriate position on the container by the tubular member of the antenna is radiated to the sealing member from a plurality of slits opened at appropriate intervals, the microwave is uniformly introduced into the container. You.

A microwave plasma processing apparatus according to a fourth invention is characterized in that, in the third invention, the interval L is determined based on the following equation. L = λg / 2, where λg: wavelength of microwave propagating in the antenna

The current flowing through the wall surface of the tubular member due to the standing wave formed in the tubular member of the antenna reaches a maximum at every position L = λg / 2 from the closing member. for that reason,
When slits are opened at these positions, energy loss can be suppressed as much as possible, and microwaves can be emitted from the slits.

According to a fifth aspect of the present invention, there is provided a microwave plasma processing apparatus according to any one of the first to fourth aspects, wherein a dielectric is inserted into the tubular member.

The wavelength of the microwave incident on the antenna is shortened by 1 / √ (εr) (εr is the relative permittivity of the dielectric) due to the dielectric. Therefore, when a tubular member of the same length is used, the position where the current flowing through the wall surface of the tubular member is maximized when the dielectric is loaded compared to when the dielectric is not loaded. Therefore, many slits can be opened. Therefore, the microwave can be more uniformly introduced into the container.

In a microwave plasma processing apparatus according to a sixth aspect of the present invention, in any one of the first to fourth aspects, the closing member is slidably fitted in the tubular member in the longitudinal direction thereof. And

When the distance between the antenna in which the plasma is generated and the antenna is short, if the density of the plasma generated in the container becomes high, the coupling between the antenna and the plasma causes
Since the wavelength of the microwave propagating in the antenna becomes shorter, the position where the current flowing through the wall surface of the tubular member becomes maximum changes. At this time, the position of the closing member fitted inside the tubular member so as to be slidable in the longitudinal direction of the tubular member is adjusted, and the position where the current is maximized is adjusted to the position of the slit. Thereby, even when the distance between the container in which plasma is generated and the antenna is short, microwaves can be radiated from the antenna with high efficiency.

According to a seventh aspect of the present invention, in the microwave plasma processing apparatus according to any one of the first to sixth aspects, the distance between the antenna and the sealing member is adjusted by adjusting a distance between the antenna and the sealing member. And a driving device for driving the support member forward and backward.

[0024] As the plasma generated in the container becomes denser, the driving device retracts the support member to increase the distance between the antenna and the sealing member. This weakens the coupling between the antenna and the plasma and prevents the plasma from affecting the microwave propagating in the antenna.

[0025]

Embodiments of the present invention will be specifically described below with reference to the drawings. (Embodiment 1) FIG. 1 is a side sectional view showing the structure of a microwave plasma processing apparatus according to the present invention, and FIG. 2 is a plan view of the microwave plasma processing apparatus shown in FIG. The entire bottomed cylindrical reactor 1 is made of aluminum. A microwave introduction window is opened at the upper part of the reactor 1, and the microwave introduction window is sealed in an airtight state by a sealing plate 4. The sealing plate 4 is formed of a dielectric material such as quartz glass or alumina, which has heat resistance and microwave permeability and has small dielectric loss.

A cover member 10 formed by molding a conductive metal into a circular lid shape is fitted on the sealing plate 4 described above, and the cover member 10 is fixed on the reactor 1. Cover member 10
An antenna 11 for introducing microwaves into the reactor 1 is provided on the upper surface of the reactor 1. The antenna 11 is a cover member 10
, And a plurality of slits 15, 15,... Formed in a portion of the cover member 10 opposed to the waveguide type antenna section 12 and having a U-shaped cross section. And

One end of the waveguide antenna section 12 is connected to a waveguide 21 connected to a microwave oscillator 20, and the other end of the waveguide antenna section 12 is closed. One end of the waveguide-type antenna unit 12 is linear, and the other end is arc-shaped (C-shaped) or one-turn spiral (arc-shaped in FIG. 1).
The curved portion 12a is formed to have an appropriate curvature. The waveguide antenna section 12 is fixed to the upper surface of the cover member 10 such that the center of the bent portion 12a and the center of the cover member 10 coincide.

The microwave oscillated by the microwave oscillator 20 is incident on the waveguide type antenna section 12 of the antenna 11 via the waveguide 21. This incident wave is superimposed on the reflected wave from the closed end of the waveguide antenna section 12, and a standing wave is generated in the waveguide antenna section 12. Accordingly, n · λg / 2 (n is an integer and n ≧ n) is applied to the peripheral wall of the waveguide antenna section 12 from the closed end of the waveguide antenna section 12.
A current having a maximum value flows for each of 0 and λg (wavelength of a microwave propagating in the antenna).

At this time, the mode of the microwave propagating in the waveguide-type antenna unit 12 is changed to a rectangle T which is the fundamental propagation mode.
In order to achieve E10, the size of the waveguide antenna unit 12 is set to 27 m in height according to the microwave frequency of 2.45 GHz.
m, width 96 mm. The microwave in this mode propagates through the waveguide antenna unit 12 with almost no energy loss. When the sealing plate 4 having a diameter of 380 mm is used, the waveguide type antenna unit 1 is positioned from the center of the bent part 12a.
The dimension up to the center in the width direction of 2 is about 120 mm.

FIG. 3 shows the slit 1 shown in FIG. 1 and FIG.
It is explanatory drawing explaining 5, 15, .... As shown in FIG. 3, the slits 15, 15,...
The center axis 16 of the bent portion 12a is
It is set up so that it is orthogonal to, and each slit 15,15,…
Is set at a position of n · λg / 2 from the closed end of the waveguide antenna unit 12. As described above, the slits 15, 15,... Are opened at positions where the maximum value of the current flowing through the peripheral wall of the waveguide antenna section 12 is shown, and the potential difference generated across the slits 15, 15,. By each slit
An electric field is emitted from 15, 15,..., And the electric field penetrates the sealing plate 4 and is introduced into the reactor 1 (both refer to FIG. 1). That is, microwaves for generating plasma are introduced into the reactor 1. When the waveguide type antenna section 12 having the above-described dimensions is used, each slit 15, 15,.
, and the distance from the closed end of the waveguide antenna unit 12 to the center of the slits 15, 15,... is 79.2 mm.
Established to be an integral multiple of.

In this embodiment, the slits 15, 1
5, ... are opened so as to be orthogonal to the central axis 16 of the bent portion 12a. However, the present invention is not limited to this, and a slit may be opened so as to cross the central axis 16 at an angle. , Central axis
It may be opened in parallel with 16. As described later, the wavelength of the microwave propagating in the antenna 11 changes due to the plasma generated in the reactor 1, and the waveguide-type antenna 12
The position indicating the maximum value of the current flowing through the peripheral wall may change, but in the slit opened diagonally on the central axis 16 or the slit opened in parallel with the central axis 16, the maximum value of the current is changed. The indicated change in position can be captured in the area of the slit.

As described above, each of the slits 15, 15,.
Since the cover member 10 is provided substantially radially, the microwave is uniformly introduced into the entire region in the reactor 1. On the other hand, FIG.
As shown in the above, since the antenna 11 is provided on the cover member 10 having the same diameter as the diameter of the reactor 1 without protruding from the periphery of the cover member 10, even if the diameter of the reactor 1 is large, The size of the microwave plasma processing apparatus can be as small as possible and can therefore be installed in a small space.

The reactor 1 is provided with a through hole penetrating the peripheral wall of the processing chamber 2, and a required gas is introduced into the processing chamber 2 from a gas introduction pipe 5 fitted in the through hole. . At the center of the bottom wall of the processing chamber 2, a mounting table 3 for mounting the sample W is provided, and a first high frequency power supply 7 is connected to the mounting table 3 via a matching box 6. An exhaust port 8 is provided on the bottom wall of the reactor 1 so that the inside air of the processing chamber 2 is discharged from the exhaust port 8.

In order to perform an etching process on the surface of the sample W using such a microwave plasma processing apparatus, the inside of the processing chamber 2 is evacuated to a desired pressure by exhausting from the exhaust port 8, and then the gas introducing pipe 5 is formed. To supply the reaction gas into the processing chamber 2. Next, microwaves are oscillated from the microwave oscillator 20, and the microwaves are introduced into the antenna 11 through the waveguide 21, and standing waves are formed there. With this standing wave, the antenna
The electric field radiated from the 11 slits 15, 15,... Passes through the sealing plate 4 and is introduced into the processing chamber 2, and plasma is generated in the processing chamber 2, and the surface of the sample W is etched by the plasma. I do.

(Second Embodiment) FIG. 4 is a side sectional view showing a second embodiment, in which a dielectric 13 is inserted in an antenna 11. In the figure, parts corresponding to those in FIG. 1 are denoted by the same reference numerals, and description thereof is omitted. The dielectric 13 is selected from a fluororesin such as Teflon (registered trademark), a polyethylene resin, a polystyrene resin, or the like, having a required dielectric constant εr. The wavelength of the microwave propagating in the dielectric 13 is as short as 1 / √ (εr) of the wavelength of the microwave propagating in the antenna 11 in which the dielectric 13 is not mounted. Therefore, as described above, n · m from the closed end of the waveguide antenna unit 12.
The number of slits 15, 15,... opened at the position of λg / 2 can be made larger than when the dielectric 13 is not inserted. Thereby, the microwave can be more uniformly introduced into the reactor 1 while suppressing the energy loss.

(Embodiment 3) FIG. 5 is a partial plan view showing Embodiment 3 in which the effective length of the antenna 11 can be adjusted. A through hole is formed in the end surface of the waveguide type antenna section 12 provided in the antenna 11, and a plunger 18 is inserted into the through hole so as to be able to advance and retreat. At the base end of the plunger 18 is a stop 19 having a diameter larger than the diameter of the through hole.
The stop 19 stops the plunger 18 from entering the waveguide antenna section 12. In addition, a conductive moving plate (closing member) 17 having the same outer diameter as the inner diameter of the waveguide type antenna unit 12 and being slidably fitted inside the end surface of the waveguide type antenna unit 12 slightly inside. The periphery of the moving plate 17 is tapered. The tip of a plunger 18 is connected to the movable plate 17, and the position of the movable plate 17 in the longitudinal direction of the waveguide antenna unit 12 is adjusted by moving the plunger 18 back and forth.

The microwave incident on the waveguide type antenna section 12 is reflected by the moving plate 17 to form a standing wave.
The slits 15, 15,... Are moved from the movable plate 17, which is in contact with the end face of the waveguide antenna section 12, based on the wavelength λg of the microwave incident on the waveguide antenna section 12, from the n.・ Λ
It is opened at g / 2.

In such a microwave plasma processing apparatus, plasma is generated in a state where the moving plate 17 is in contact with the end face of the waveguide antenna section 12, and the plasma is generated in the processing chamber 2 (see FIG. 1). As the plasma density increases, the distance between the moving plate 17 and the end face of the waveguide antenna section 12 increases.

Processing chamber 2 in which plasma is generated and antenna
When the distance is close to 11, the wavelength of the microwave introduced into the antenna 11 becomes shorter as the plasma generated in the processing chamber 2 becomes denser, and accordingly, the peripheral wall of the waveguide type antenna section 12 The interval indicating the maximum value of the flowing current is shortened. However, in the present embodiment, as described above, as the density of plasma in the processing chamber 2 increases, the distance between the moving plate 17 and the end surface of the waveguide antenna unit 12 is increased. By reducing the distance between the moving plate and the slits 15, 15,..., The position of the local maximum value of the current flowing through the peripheral wall of the waveguide antenna unit 12 becomes the position of the slits 15, 15,. Is adjusted as follows. Thus, microwaves can be uniformly introduced into the processing chamber 2 and high-intensity microwaves can be introduced even if the plasma in the processing chamber 2 has a high density.

(Embodiment 4) FIG. 6 is a side sectional view showing Embodiment 4 in which the size of the air gap 9 between the antenna 11 and the sealing plate 4 is adjusted. In the figure, portions corresponding to those in FIG. 1 are denoted by the same reference numerals, and description thereof is omitted. An elevating part 10a is provided on the periphery of the cover member 10, and an elevating drive device 14 for driving the cover member 10 up and down is connected to the elevating part 10a. Then, the thickness of the air gap 9 between the cover member 10 and the sealing plate 4 is adjusted by moving the cover member 10 and the antenna 11 provided on the cover member 10 by driving the lifting / lowering drive device 14. It has been done.

In order to perform an etching process on the surface of the sample W using such a microwave plasma processing apparatus, the size of the air gap 9 is set to zero, and the inside of the processing chamber 2 is evacuated by exhausting from the exhaust port 8. After the pressure has been reduced to the pressure, the reaction gas is supplied from the gas introduction pipe 5 into the processing chamber 2. Next, microwaves are oscillated from the microwave oscillator 20, and the microwaves are introduced into the antenna 11 through the waveguide 21, and standing waves are formed there. Due to this standing wave, the slits 15 of the antenna 11,
An electric field is radiated from 15, and plasma is generated in the processing chamber 2 by the electric field transmitted through the sealing plate 4. As the density of the generated plasma increases, the cover member 10 is raised by the lifting drive device 14 to increase the size of the air gap 9 and etch the surface of the sample W.

When the density of the plasma generated in the processing chamber 2 becomes high, the wavelength of the microwave propagating in the antenna 11 is shortened due to the coupling between the antenna 11 and the plasma, whereby the microwave passes through the wall surface in the antenna 11. The position where the flowing current is maximum changes. In the present embodiment, as the density of plasma in the processing chamber 2 increases, the cover member 10 is raised by the lifting drive unit 14 and the air gap 9 is increased.
Is increased, the coupling between the antenna 11 and the plasma in the processing chamber 2 is weakened, and the wavelength of the microwave propagating in the antenna 11 is prevented from being shortened. In addition, the density of the plasma in the processing chamber 2 can be detected, for example, by detecting light emission at the time of plasma generation with an optical fiber.

In the first to fourth embodiments, the inside of the slit is empty, but the present invention is not limited to this.
A dielectric may be fitted inside the slit. When the power of the microwave introduced into the antenna is high, the electric field of the microwave is locally concentrated at the corner of the slit, and abnormal discharge may occur between the slit and the sealing plate. Due to the abnormal discharge, the plasma becomes unstable or non-uniform, which may hinder the plasma processing, or may damage the slit or the sealing plate. However, when a dielectric is inserted into the slit, the concentration of the electric field at the corners of the slit can be suppressed, and the space in which discharge can occur can be closed by the dielectric. Without increasing the safety, the sample can be stably and uniformly plasma-treated using a high-power microwave. Teflon (registered trademark), quartz, alumina, or the like that does not absorb microwaves can be used as the dielectric to be fitted in the slit. Alumina is preferable because local electric field concentration can be suppressed. .

[0044]

As described in detail above, in the microwave plasma processing apparatus according to the first invention, since the microwave can be directly incident into the tubular member of the antenna, the antenna projects from the container. Never do. Therefore, even if the diameter of the container is large, the size of the microwave plasma processing apparatus is as small as possible, so that the apparatus can be installed in a small space. On the other hand, the microwave is guided to an appropriate position on the container by the tubular member of the antenna and is radiated from the slit, so that the microwave can be uniformly introduced into the container.

In the microwave plasma processing apparatus according to the second aspect of the present invention, since the tubular member is formed into a C-shape or a spiral shape, the microwave can be guided to almost the entire region of the container, thereby Microwaves can be uniformly introduced into the inside.

In the microwave plasma processing apparatus according to the third aspect of the present invention, the microwave guided to an appropriate position on the container by the tubular member of the antenna is sealed from a plurality of slits opened at appropriate intervals. The microwaves are uniformly introduced into the container for radiation.

In the microwave plasma processing apparatus according to the fourth invention, microwaves can be radiated from the slit while minimizing energy loss.

In the microwave plasma processing apparatus according to the fifth aspect of the present invention, since more slits can be opened than when no dielectric is charged, the microwaves can be more uniformly introduced into the container. Can be.

[0049] In the microwave plasma processing apparatus according to the sixth aspect of the present invention, microwaves can be radiated from the antenna with high efficiency even when the distance between the container in which plasma is generated and the antenna is short.

In the microwave plasma processing apparatus according to the seventh aspect of the present invention, the distance between the antenna and the sealing member is increased by increasing the distance between the antenna and the sealing member as the density of the plasma generated in the container increases. The present invention has excellent effects, such as preventing plasma from affecting microwaves propagating in the antenna by weakening the coupling of.

[Brief description of the drawings]

FIG. 1 is a side sectional view showing a structure of a microwave plasma processing apparatus according to the present invention.

FIG. 2 is a plan view of the microwave plasma processing apparatus shown in FIG.

FIG. 3 is an explanatory diagram illustrating a slit shown in FIGS. 1 and 2.

FIG. 4 is a side sectional view showing a second embodiment.

FIG. 5 is a partial plan view showing a third embodiment.

FIG. 6 is a side sectional view showing a fourth embodiment.

FIG. 7 is a side sectional view showing a microwave plasma processing apparatus of the same type as a conventional apparatus.

8 is a plan view of the plasma processing apparatus shown in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Reactor 2 Processing chamber 3 Mounting table 4 Sealing plate 10 Cover member 11 Antenna 12 Waveguide antenna part 12a Curved part 15 Slit 21 Waveguide W Sample

Claims (7)

[Claims] 1. A microwave that is transmitted through the sealing member to introduce a microwave into a container that is partially sealed with the sealing member, generates plasma by the microwave, and performs processing by the generated plasma. In an apparatus for processing an object, an antenna formed by closing the other end of a tubular member that receives microwaves from one end with a closing member and opening a slit in a portion of the tubular member facing the sealing member is provided with the antenna. The microwave is provided so as to face the surface of the member, microwaves are incident into the antenna from one end of the tubular member, and are radiated from the slit to the sealing member. Wave plasma processing equipment. 2. The microwave plasma processing apparatus according to claim 1, wherein the tubular member is formed in a C shape or a spiral shape. 3. The microwave plasma processing apparatus according to claim 1, wherein a plurality of the slits are opened at a predetermined interval from the closing member. 4. The microwave plasma processing apparatus according to claim 3, wherein said interval L is determined based on the following equation. L = λg / 2, where λg: wavelength of microwave propagating in the antenna 5. The microwave plasma processing apparatus according to claim 1, wherein a dielectric is inserted in the tubular member. 6. The microwave plasma processing apparatus according to claim 1, wherein the closing member is slidably fitted inside the tubular member in a longitudinal direction thereof. 7. A supporting member for supporting the antenna, and a driving device for driving the supporting member forward and backward so as to adjust a distance between the antenna and the sealing member.
The microwave plasma processing apparatus according to any one of the above.