JPH1093119A - Method of manufacturing substrate for photovoltaic device and photovoltaic device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To take out the output of a photovoltaic device formed on a substrate surface from its back side. SOLUTION: The manufacturing process for electrically separating an output take-out region 3 located in a conductive substrate 1 from it comprises steps of forming cut grooves 4, 4 surrounding the output pickup region 3 into the substrate 1, except connection regions 5, 5, i.e., a part of the outside of the region 3, burying insulation pastes 6, 6 to be insulation members in the grooves 4, 4, and removing the connection regions 5, 5.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a substrate for a photovoltaic device for extracting an output to the back side of the substrate, and a structure of the photovoltaic device.

[0002]

2. Description of the Related Art Conventionally, in a photovoltaic device formed on a substrate, a structure in which output is taken out to the back side is disclosed in
No. 123073. This photovoltaic device has an opening provided in the substrate, a front-side output terminal provided on the front side of the substrate, and a back-side output terminal provided on the back side, and is provided through the opening. The front side output terminal and the back side output terminal are electrically connected by the conductive adhesive.

[0003]

SUMMARY OF THE INVENTION The present invention provides a structure for extracting output to the back side of a substrate different from the conventional one, and a manufacturing method.

[0004]

A feature of the first method of manufacturing a substrate for a photovoltaic device according to the present invention is that an output extraction region located in a conductive substrate is electrically separated from the conductive substrate. A method for manufacturing a photovoltaic substrate for, in the conductive substrate, a step of forming a cutting groove surrounding the output extraction region, except for a part outside the output extraction region,
A step of embedding an insulating member in the cut groove; and a step of removing the part.

A feature of the second method of manufacturing a substrate for a photovoltaic device of the present invention is that a photovoltaic substrate having a substrate effective portion and a substrate invalid portion adjacent thereto is located within the substrate effective portion. A method for manufacturing a photovoltaic substrate for electrically separating an output extraction region from other effective portions of the substrate, wherein a cutting groove surrounding the output extraction region is formed outside of the output extraction region. Excluding the portion, the cutting groove is formed in the substrate effective portion, such that the part is located in the substrate invalid portion, a step of forming, a step of embedding an insulating member in the cutting groove, the substrate invalid portion Separating from the substrate effective portion.

The third method of manufacturing a substrate for a photovoltaic device according to the present invention is characterized in that a metal substrate is provided with a hole or a notch-shaped cutout by a press working method.
Arranging an insulating member reaching the back surface of the substrate through the side wall of the cutout, and forming a conductive film from the front surface side of the substrate through the side wall of the cutout to the back surface of the substrate. Arranging on the insulating member.

A feature of the photovoltaic device of the present invention is that a photovoltaic element formed on the surface of a metal substrate and an output terminal formed on the substrate for outputting an output from the photovoltaic element are provided. A photovoltaic device having a hole or a notch-shaped cutout formed in the metal substrate by a press working method, and electrically connected to the output terminal, and passing through the cutout to the back side of the substrate. The electrical connection means, comprising a polymer film, a laminate of a conductive layer and a hot-melt resin layer, the hot-melt resin layer and the output terminal portion is fixed, and the An insulating layer is disposed on a portion of the hot melt resin layer that passes through the cutout.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a method for manufacturing a photovoltaic device according to a first embodiment of the present invention will be described in detail with reference to FIGS. The first embodiment forms an output extraction area located in a metal substrate and electrically separated from the substrate, and connects the output extraction area to an output terminal of the photovoltaic device.
This is a method of manufacturing a structure for taking out output from the back surface of the substrate.

In the process shown in FIG. 1, first, an insulating film 2 (thickness 1 to 50) of silicon oxide or polyimide resin is formed on a substantially rectangular metal substrate 1 (thickness 0.1 to 0.5 mm).
μm). Next, in the lower left corner of the substrate 1, the cutout grooves 4, 4 surrounding the output extraction area 3 are formed in the area where one output terminal described later is formed.
Are formed except for the connection regions 5 and 5 outside the above. Here, the width of the cutting groove 4 is about 0.05 to 0.5 mm.
By irradiating the metal substrate 1 with CO ₂ laser light from above the insulating film 2, the irradiated portion of the insulating film and the metal substrate is evaporated to form the substrate.

Next, in the step shown in FIG. 2, the cut grooves 4, 4 are filled with insulating pastes 6, 6. As a material of the insulating paste 6, a polyimide or phenol-based binder containing a powder of inorganic material such as silicon dioxide (particle size: about 1.5 to 7.0 μm) can be used. After being placed, 2
It is formed by drying at 50 to 300 ° C.

Next, in the step shown in FIG. 3, laser light is scanned in a circle around the connection regions 5 and 5 to form circular grooves 7 and
7 are formed, and the substrate portion surrounded by the circular groove 7 is removed to form cutouts 7a, 7a shown in FIG. By this step, the output extraction region 3 can be mechanically supported on the metal substrate 1 by the insulating paste 6 and can be electrically separated.

In the step shown in FIG. 5, substantially rectangular photovoltaic elements A to D comprising a metal electrode layer, a semiconductor photoactive layer, and a transparent electrode layer are formed in this order from the substrate 1 side. These photovoltaic elements A to D are arranged adjacent to each other along the longitudinal direction of the substrate 1 and are not shown.
In the structure disclosed in JP-A-8-21827, each is connected in series in the order of the photovoltaic elements A to D.

In addition, output terminals 8a and 8d for deriving an output from the photovoltaic elements connected in series are electrically connected to the photovoltaic elements A and D, respectively, and formed outside these. You. These output terminals 8a and 8d are made of a conductive paste, and a powder of silver, nickel, aluminum or the like (particle size of about 3
７7 μm), which is patterned by screen printing.
After being baked, it is baked at 250 to 300 ° C. to form a height of about 10 to 50 μm.

The output terminal 8a has an extension that extends above the output extraction area 3. By irradiating the laser beam from above the extending portion, the material of the output terminal 8a and the material of the insulating film 2 in the irradiated portion evaporate, and the molten material of the output terminal 8a flows from around the portion, and 1 and is electrically connected. A portion where the output terminal 8a is electrically connected to the substrate 1 is referred to as a welded portion 9a.
As shown in FIG.

On the other hand, by irradiating a laser beam from above the output terminal 8d, the output terminal
d and the metal substrate 1 are electrically connected, and the electrically connected portion is shown in FIG. 6 as a welded portion 9d.

In this embodiment, after the insulating film 2 is formed on the metal substrate 1, the cut grooves 4, 4 are formed, and the insulating paste 6, 6 is filled. Alternatively, after forming the cut grooves 4 in the metal substrate 1, an insulating film may be formed on the metal substrate 1 and in the cut grooves 4.

Through the above steps, the photovoltaic device of the first embodiment is completed. The output from the output terminal 8a is from the back side of the output extraction region 3, and the output from the output terminal 8d is from the metal substrate 1. It can be taken out from anywhere on the back side.
Next, a method for manufacturing a photovoltaic device according to a second embodiment of the present invention will be described in detail with reference to FIGS.

As shown in FIG. 7, on a substantially rectangular metal substrate 11 (thickness: 0.1 to 0.5 mm), an upper region divided by a two-dot chain line is a substrate effective portion 12. ,
This is a region where a photovoltaic device including an output terminal described later is formed. Further, a substrate invalid portion 13 is disposed below the substrate valid portion 12, and is an area that is cut and separated when the photovoltaic device is completed.

In the step shown in FIG.
4 is cut into the connection region 13
It is formed leaving a. Here, the width of the cutting groove 15 is about 0.5.
When the metal substrate 11 is irradiated with a laser beam, the metal material is evaporated and formed.

Next, in the step shown in FIG. 8, the entire surface of the metal substrate 1 is screen-printed except for the central portion of the output extraction region 14 and the portion where the other output terminal to be described later is formed. A varnish, which is a base material of the polyimide film, is applied. By this step, the varnish can also flow around the cutting groove 15. Therefore, a hole 16 is formed at the center of the output extraction region 14, and a hole 17 is formed at a portion where the other output terminal is formed. Thereafter, the entire substrate 1 is
The temperature is increased stepwise to 0 to 300 ° C. to perform imidation to form a heat-resistant insulating film 18 made of a polyimide film.

In the step shown in FIG. 9, substantially rectangular photovoltaic elements A to D comprising a metal electrode layer, a semiconductor photoactive layer and a transparent electrode layer are formed in this order from the substrate 11 side. These photovoltaic elements A to D are arranged adjacent to each other along the longitudinal direction of the substrate 11 and are not shown. For example, each of the photovoltaic elements has a structure disclosed in Japanese Patent Publication No. 58-21827. The electromotive elements A to D are connected in series in this order.

In addition, output terminals 19a and 19d for deriving an output from the photovoltaic elements connected in series are electrically connected to the photovoltaic elements A and D, respectively. It is formed so as to include the openings 16 and 17. Therefore, the output terminal 19 a is electrically connected to the metal material of the output extraction area 14 through the opening 16. On the other hand, the output terminal 19 d is electrically connected to the metal substrate 11 through the opening 17. Here, these output terminals 19a and 19d are:
It is made of a conductive paste and contains a powder of silver, nickel or aluminum (particle diameter: about 3 to 7 μm) in a polyimide or phenolic binder. After being patterned by screen printing, it is fired at 250 to 300 ° C. And a height of about 10 to 50 μm.

Next, the substrate invalid portion 13 is cut and separated from the substrate effective portion 11 by a pressing process to complete the photovoltaic device shown in FIG. In the photovoltaic device having the above structure, the output from the output terminal 19a is
And the output from the output terminal 19d can be taken out from anywhere on the back side of the metal substrate 11. Next, a method for manufacturing a photovoltaic device according to a third embodiment of the present invention will be described in detail with reference to FIGS.

In the step shown in FIG. 11, first, an insulating film 22 such as silicon oxide or polyimide resin is formed on a substantially rectangular metal substrate 21 (0.1 to 0.5 mm in thickness). Next, using the press working method, circular cut portions 23a and 23d are formed near the lower right and lower left corners of the metal substrate 21.
Is provided. Here, as shown in FIGS. 11B and 11C, the cut portion of the substrate 21 is approximately 10
Burrs 21a protruding by about μm are formed. Although the circular cutouts 23a and 23d are provided here, a cutout cutout provided at the outer peripheral end of the substrate 21 may be used.

Next, in the step shown in FIG. 12, the insulating paste 24r is disposed on the outer peripheral portion of the punched portion 23a on the back side of the substrate 21 and on the side wall of the punched portion 23a. As a method of forming the insulating paste 24r, as shown in FIG. 13, a screen plate 25 having a desired pattern is used, the substrate 21 is turned face down, and the insulating paste 24r is formed.
The pattern is formed by printing the raw material. Here, the pattern of the screen plate 25 is
It is formed by disposing an emulsion 25b (portion indicated by oblique lines) on the stainless mesh 25a of the screen plate 25 corresponding to the region where the raw material r is not applied. At this time, the arrangement portion of the emulsion 25b corresponding to the circular punched portion 23a is made smaller by 0.1 to 0.2 mm with respect to the diameter of the punched portion 23a to have a small area. When screen printing is performed with this pattern size, as shown in FIG. 12B, the raw material of the insulating paste 24r wraps around the side wall of the punched portion 23a,
It is formed.

As a material of the insulating paste 24r, a material containing a powder of an insulating material such as silicon dioxide (particle diameter: about 1.5 to 7.0 μm) in a polyimide or phenolic binder can be used. After drying, it is dried at 250-300 ° C.
It is formed to 50 μm. Therefore, the projection-like burrs 21a
Can be embedded in the insulating paste 24r.

Next, in the step shown in FIG.
2 and 13 using the same screen printing method.
The outer peripheral portion of the cutout portion 23a on the front surface side and the cutout portion 23a
The insulating paste 24s is arranged on the side wall of the. As a result, the insulating paste is disposed on the entire side wall of the cutout 23a.

Next, in the step shown in FIG.
a, the conductive paste 25ar is placed on the insulating paste 24r on the back side, and the substrate 21 is placed in the cutout 23d.
Conductive paste 25dr is arranged on the back side of the substrate. The screen printing method similar to that shown in FIGS. 12 and 13 is used for this forming method. The conductive paste 25a is formed on the insulating paste formed on the side wall of the cutout 23a and also on the side wall of the cutout 23d.
r, 25dr are formed. This conductive paste 25a
r and 25dr are polyimide or phenol-based binders containing powders of silver, nickel or aluminum (particle diameter: about 3 to 7 μm), which are patterned by screen printing and then fired at 250 to 300 ° C. , And a height of about 10 to 50 μm.

In the step shown in FIG. 16, the conductive paste 25as is disposed on the insulating paste 24s on the front surface side in the punched portion 23a, and the conductive paste 25ds is disposed on the front surface side of the substrate 21 in the punched portion 23d. For this forming method, the same screen printing method as that shown in FIGS. 12 and 13 is used.
The conductive pastes 25as and 25
ds is formed.

Next, in the step shown in FIG. 17, substantially rectangular photovoltaic elements A to D comprising a metal electrode layer, a semiconductor photoactive layer and a transparent electrode layer are formed in this order from the substrate 21 side. These photovoltaic elements A to D are arranged adjacent to each other along the longitudinal direction of the substrate 21, and each of them is not shown in the drawing, for example, in the structure disclosed in Japanese Patent Publication No. 58-21827. The electromotive elements A to D are connected in series in this order.

In addition, output terminals 28a and 28d made of a conductive paste for leading the output from the photovoltaic elements connected in series are electrically connected to the photovoltaic elements A and D, respectively. It is formed on the conductive pastes 25as and 25ds.

By the above steps, the photovoltaic device of the third embodiment is completed. The output from the output terminal 28a is from the conductive paste 25ar on the back side, and the output from the output terminal 28d is from the metal substrate 21. It can be taken out from anywhere on the back side. Further, since the projection-like burrs 21a are buried in the insulating paste, the conductive paste 25ar formed thereon does not come into contact with the burrs 21a to be electrically conducted. Next, a photovoltaic device according to a fourth embodiment of the present invention will be described in detail with reference to FIGS.

FIG. 18 shows a photovoltaic device according to the present embodiment. Reference numeral 31 denotes a substantially rectangular metal substrate (having a thickness of 0.1 to 0.5 m).
m) and 32 are insulating films (1 to 50 μm thick) such as silicon oxide or polyimide resin formed on the substrate 31. The substrate 31 has a notched cutout 31 on its lower side.
a, 31d. In addition, the cutout portions 31a, 3
The shape of 1d may be an aperture.

A to D are photovoltaic elements composed of a metal electrode layer, a semiconductor photoactive layer and a transparent electrode layer in this order from the substrate 31 side. These photovoltaic elements A to D are arranged in the longitudinal direction of the substrate 31. Although not shown, they are connected in series in the order of photovoltaic elements A to D, for example, in a structure disclosed in Japanese Patent Publication No. 58-21827.

Reference numerals 33a and 33d denote output terminals for deriving outputs from the photovoltaic elements connected in series. The output terminals are electrically connected to the photovoltaic elements A and D, and are formed outside these. I have. Reference numerals 34a and 34d denote electrical connection means formed of a heat-seal or the like having a substantially band shape and flexibility, and are connected to the output terminals 33a and 33d at one end portions 35 and 35 located on the surface side of the substrate 21. Wearing and being electrically connected. And the electric connection means 34a, 34d
1a, 31d, and the other ends 36, 36
1 to the back side.

Here, the structure of the electric connection means 34a, 34d will be described in detail with reference to FIG. Reference numeral 41 denotes a polymer film (thickness: about 20 to 50 μm) having a substantially belt-like shape and made of polyester or the like, and has a narrow constriction at the center in the lateral direction to pass through the cutouts 31a and 31d. It has a portion 41a. 42 is a polymer film 4
1 is a first conductive layer (about 10 to 30 μm in thickness) formed of a conductive layer in which a substantially band-shaped metal powder such as Ag is mixed in a resin binder. The first conductive layer 42 has a smaller area than the polymer film 41 as shown in FIG.
Further, corresponding to the constricted portion 41a of the polymer film 41, the central portion in the lateral direction has a constricted shape. 4
3 includes a polymer film 41 including on the first conductive layer 42.
A second conductive layer (having a thickness of about 10 to 10) made of a conductive layer in which graphite powder or the like formed on the entire back surface is mixed in a resin binder.
30 μm) to prevent the first conductive layer 42 from being directly exposed to the air and oxidized.

Reference numeral 44 denotes a hot-melt resin layer (about 10 to 20 μm thick) formed on the second conductive layer 43 except for the other end 36 of the second conductive layer 43. In the portion 36, the second conductive layer 43 is exposed. Reference numeral 45 denotes an insulating layer made of an insulating paste formed on the hot melt resin layer 44 at a substantially central portion in the lateral direction of the electric connection means.

The electric connection means has the above structure, and one end 35 of the electric connection means is connected to the output terminal (3) of the photovoltaic device.
3a or 33d), the hot-melt resin layer 44 is brought into close contact with it, and thermocompression-bonded. As a result, the second conductive layer 43 comes into contact with the output terminal (33a or 33d) to be electrically connected, and the melted and hardened hot melt resin layer 44 functions as an adhesive, so that the electric connection means and the output terminal are connected. It is fixed. Note that a small amount of metal powder or graphite powder may be mixed into the hot melt resin layer 44 in order to increase the electrical conductivity of the fixing portion. Thereby, the portion where the hot-melt resin layer 44 is not thermocompression-bonded acts as an insulating material, and in the thermocompression-bonded portion, a large amount of the resin component evaporates to increase the density of the metal powder or graphite powder, thereby increasing the required conductivity. Obtainable.

As described above, the second conductive layer 43 is exposed at the other end portions 36, 36 of the electric output means 34a, 34d on the back surface of the photovoltaic device of the fourth embodiment. More output can be obtained. FIG.
8 (b) and 8 (c), the cutout portions 31a,
In the vicinity of 31d, the electric connection means 34a, 34d
The insulating layer 45 is disposed on the back side of the substrate 31, so that the front end 21 p of the substrate 31 located here breaks through the hot melt resin layer 44 and the first and second conductive layers 4.
Disconnection of 2, 43 can be prevented. Further, on the front surface side of the electric connection means 34a and 34d, the rear side end portion 21x of the substrate 31 located here is damaged, but the front surface side of the electric connection means is relatively thick and hot. Since the polymer film 41, which is more resistant to abrasion than the melt resin layer 44, is provided, an insulating layer need not be provided here, but an insulating layer may be provided if necessary.

[0040]

According to the first method of manufacturing a substrate for a photovoltaic device according to the present invention, the output extraction region located in the conductive substrate is electrically separated, so that the photovoltaic device is manufactured. When the output terminal of the device is electrically connected to the output extraction area, the output can be extracted from the back side of the substrate.

In the second method for manufacturing a substrate for a photovoltaic device according to the second aspect of the present invention, the output extraction region of the effective substrate portion separated from the invalid substrate portion is electrically separated. When the output terminal of the photovoltaic device is electrically connected to the output extraction region, the output can be extracted from the back surface side of the substrate.

In the third method of manufacturing a substrate for a photovoltaic device according to the third aspect of the present invention, the burr of the punched portion formed by the press working method passes through the side wall of the punched portion from the surface side. Since it is buried in the insulating member reaching the back side, the conductive film formed on the insulating member and the burrs do not undesirably electrically conduct. Therefore, when the output terminal of the photovoltaic device is formed on the surface of the substrate and is electrically connected to the conductive film, the substrate and the output terminal are not electrically connected. In the manufacturing method according to the fourth aspect, since the portion through which the paste-like material does not pass is smaller in area than the punched portion, the insulating member is also arranged on the side wall of the punched portion by a printing method using a screen plate. can do.

In the photovoltaic device according to the present invention, since the insulating layer is provided on the hot melt resin layer of the electric connection means in the portion passing through the cutout portion of the substrate, the end of the cutout portion is provided. The portion does not damage the conductive layer of the electrical connection means.

[Brief description of the drawings]

FIG. 1 shows a first step of a first embodiment of the present invention, in which (a)
Is a plan view, (b) is a sectional view taken along line AA in (a),
(C) is an enlarged plan view of an output extraction area.

FIG. 2 shows a second step of the first embodiment of the present invention, in which (a)
FIG. 2 is an enlarged plan view of an output extraction area, and FIG. 2B is a cross-sectional view taken along line AA in FIG.

FIG. 3 is an enlarged plan view of an output extraction area showing a third step of the first embodiment of the present invention.

FIG. 4 is an enlarged plan view of an output extraction area showing a fourth step of the first embodiment of the present invention.

FIG. 5 shows a fifth step of the first embodiment of the present invention, wherein (a)
Is a plan view, (b) is an enlarged plan view of an output extraction area, (c)
FIG. 3 is a sectional view taken along line AA in FIG.

FIG. 6 shows a sixth step of the first embodiment of the present invention, in which (a)
Is an enlarged plan view of the output terminal 8d, and (b) is a cross-sectional view along AA in (a).

FIG. 7 shows a first step of the second embodiment of the present invention, and (a)
Is a plan view, and (b) is an enlarged plan view of an output extraction area.

FIG. 8 shows a second step of the second embodiment of the present invention, and (a).
Is a plan view, (b) is an enlarged plan view of an output extraction area, (c)
FIG. 3 is a sectional view taken along line AA in FIG.

FIG. 9 shows a third step of the second embodiment of the present invention, and (a).
Is a plan view, (b) is an enlarged plan view of an output extraction area, (c)
FIG. 3 is a sectional view taken along line AA in FIG.

FIG. 10 shows a fourth step of the second embodiment of the present invention,
FIG. 2A is a plan view, and FIG. 2B is an enlarged plan view of an output extraction area 14.

FIG. 11 shows a first step of the third embodiment of the present invention,
(A) is a plan view, (b) is an AA sectional view in (a), and (c) is a BB sectional view in (a).

FIG. 12 shows a second step of the third embodiment of the present invention,
(A) is an enlarged plan view of the punched portion 23a, (b) is an AA cross-sectional view in (a), and (c) is an enlarged bottom view of the punched portion 23a.

13A and 13B are diagrams illustrating a forming method in the second step of the third embodiment of the present invention, wherein FIG. 13A is an enlarged bottom view of a punched portion 23a, and FIG. 13B is a cross-sectional view taken along line AA in FIG. It is.

FIG. 14 shows a third step of the third embodiment of the present invention,
(A) is an enlarged plan view of the punched portion 23a, and (b) is a cross-sectional view taken along the line AA in (a).

FIG. 15 shows a fourth step of the third embodiment of the present invention,
(A) is a plan view, (b) is an AA sectional view in (a), (c) is a BB sectional view in (a), and (d) is a bottom view.

FIG. 16 shows a fifth step of the third embodiment of the present invention,
(A) is a plan view, (b) is an AA sectional view in (a), (c) is a BB sectional view in (a), and (d) is a bottom view.

FIG. 17 shows a sixth step of the third embodiment of the present invention,
(A) is a plan view, (b) is an AA sectional view in (a), (c) is a BB sectional view in (a), and (d) is a bottom view.

FIG. 18 shows a photovoltaic device according to a fourth embodiment of the present invention;
(A) is a plan view, (b) is an AA sectional view in (a), (c) is a BB sectional view in (a), and (d) is a bottom view.

FIG. 19 shows an electric connection means according to a fourth embodiment of the present invention;
(A) is a plan view, (b) is an AA sectional view in (a), and (c) is a BB sectional view in (a).

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 3 Output extraction area 4 Cutting groove 11 Substrate 12 Substrate effective part 13 Substrate invalid part 14 Output extraction area 15 Cutting groove 21 Substrate 23a Cutout 25 Screen plate 31 Substrate 31a, 31d Cutout 34a, 34d Electrical connection means 45 Insulation layer

 ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Nobuo Kado 2-5-5 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd.

Claims (5)

[Claims] 1. A method for manufacturing a photovoltaic substrate for electrically separating an output extraction region located in a conductive substrate from the conductive substrate, the method comprising: Forming a cutting groove surrounding the region except for a part outside the output extraction region; embedding an insulating member in the cutting groove; and removing the part. Of manufacturing a photovoltaic substrate. 2. In a photovoltaic substrate having a substrate effective portion and a substrate invalid portion adjacent thereto, an output extraction region located in the substrate effective portion is electrically separated from other substrate effective portions. A manufacturing method of a photovoltaic substrate for performing, the cutting groove surrounding the output extraction region, except for a part outside the output extraction region, the cutting groove in the substrate effective portion,
Forming the part so that the part is located in the substrate invalid part, burying an insulating member in the cut groove, and separating the substrate invalid part from the substrate valid part;
A method for producing a photovoltaic substrate, comprising: A step of forming a hole or a cutout in the metal substrate by a press working method; and forming an insulating member extending from a front surface side of the substrate to a back surface side of the substrate through a side wall of the cutout portion. Arranging a conductive film extending from the front surface side of the substrate to the back surface side of the substrate through the side wall of the cutout portion, on the insulating member. A method for manufacturing a power device substrate. 4. The step of arranging the insulating member according to claim 3, wherein the step of printing the paste-like material obtained by mixing a powder of an insulating material with a resin binder on both sides of the substrate using a screen plate having a pattern. 4. The substrate for photovoltaic device according to claim 3, wherein a portion through which the paste-like material does not pass is smaller in area than the cutout portion, after being applied by a thermal curing method. Manufacturing method. 5. A photovoltaic device comprising: a photovoltaic element formed on a surface of a metal substrate; and an output terminal formed on the substrate for deriving an output from the photovoltaic element, A hole or a notch-shaped cutout formed in the metal substrate by a press working method; and an electrical connection unit electrically connected to the output terminal and reaching the back side of the substrate through the cutout. The electric connection means is composed of a laminate of a polymer film, a conductive layer and a hot melt resin layer, and the hot melt resin layer and the output terminal portion are fixed to each other, and the hot portion of the portion passing through the cutout portion is provided. A photovoltaic device comprising an insulating layer disposed on a melt resin layer.