JPH1074697A - Polycrystalline silicon film, manufacture thereof, manufacture of thin film transistor and liquid crystal display device, and laser annealing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a polycrystalline silicon which is excellent in quality and large in crystal grain diameter without causing any abrasion induced by dehydrogenation carried out when polycrystalline silicon is manufactured. SOLUTION: An energy beam has such an intensity profile that it starts decreasing gradually in intensity at a certain point in a scanning direction, the density of first energy impinging on any point on a non-single crystal silicon is set lower than 160mj/cm<2> , and when an energy beam of energy density 160mj/cm<2> or above is applied, its energy density is so set as to be lower than the sum of the maximum value of energy density before a preceding shot is made and 15mj/cm<2> , and the non-single crystal silicon is repeatedly irradiated with an energy beam of the substantial maximum energy density 10 to 120 times. After the non-single crystal silicon is irradiated with an energy beam of the maximum energy density, it is restrained from being irradiated with an energy beam of lower energy density 5 times or above.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a polycrystalline silicon film which is not damaged by hydrogen degassing when polycrystallizing non-single-crystal silicon, and a uniform polycrystalline silicon which is not damaged by hydrogen degassing. And a method for manufacturing a thin film transistor and a method for manufacturing a liquid crystal display device. Further, the present invention relates to a laser annealing apparatus used for embodying the manufacturing method.

[0002]

2. Description of the Related Art In the case of producing polycrystalline silicon by laser beam irradiation, conventionally, a film was damaged by hydrogen degassing, and a high quality film could not be obtained. In order to solve this problem, a method has been adopted in which hydrogen degassing is performed in advance after an amorphous silicon film is formed, and then polycrystallization is performed by irradiation with an energy beam.

As one of such methods, Japanese Patent Laid-Open No.
Japanese Patent Application Laid-Open No. 177422 discloses a method of gradually increasing the energy distribution of a light beam spot by distributing the energy distribution of the light beam spot from a front side to a rear side in the scanning direction of the spot in a plurality of stages.

In a laser annealing apparatus for performing laser annealing, the intensity of a linear beam for finally shaping the emitted laser beam is made uniform in the major axis direction and the minor axis direction. The transformation was performed in both directions using a kaleidoscope.

[0005] In the method of irradiating a linear beam with a skirt formed therein, a laser annealing apparatus for forming the skirt is disclosed in, for example, Japanese Patent Application Laid-Open No. Hei 2-17742. A technique has been disclosed in which a filter is laminated and a laser beam is transmitted through the filter to make the energy intensity distribution of the laser beam stepwise or gentle.

[0006]

However, even with the above-described method, there is a problem that the silicon film is damaged depending on the size of the energy beam initially irradiated and the magnitude of the change in each step. there were.

[0007] In addition, while gradually irradiating energy with a large energy density and finally irradiating the energy with the maximum energy density, if the irradiation with the maximum energy density is not sufficient, the formed polycrystalline silicon There is a problem that the desired characteristics cannot be obtained. further,
If irradiation is performed a number of times with lower energy after irradiation at the maximum energy density, there is a problem that silicon starts to melt and crystallinity is deteriorated (particle diameter is reduced).

Further, in the laser annealing apparatus, the size of the exit of the kaleidoscope must be approximately the same as the size of the linear beam, so that there is a problem that the entire optical system becomes large.

Further, when the bottom of the linear beam is formed, the laser energy loss due to the transmission is conventionally 20 to 20% of the total energy since the laminated filter is conventionally transmitted.
This is a large value of 50%. Therefore, there is a problem that the utilization efficiency of the laser energy is reduced.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and provides a high-quality polycrystalline silicon film, a method of manufacturing polycrystalline silicon, a method of manufacturing a thin film transistor, and a method of manufacturing a liquid crystal display device, which are not damaged by hydrogen degassing. Another object of the present invention is to provide a laser annealing apparatus which can be downsized, can use laser energy efficiently, and can control the bottom of a linear beam.

[0011]

According to the present invention, there is provided a process for forming non-single-crystal silicon on a substrate, and scanning the non-single-crystal silicon by a relatively predetermined distance every time one shot is irradiated with an energy beam. Irradiating the non-single-crystal silicon to polycrystallize the non-single-crystal silicon, wherein the energy density initially received at any point of the non-single-crystal silicon is less than 160 mJ / cm ² ,
When energy having an energy density of 160 mJ / cm ² or more is irradiated, the energy of the maximum energy density received before the previous shot + 15 mJ / cm ² or less and the energy of the substantial maximum energy density is 1
A method for producing polycrystalline silicon, wherein 0 to 120 shots or less are received.

Further, according to the present invention, the energy density initially received at any point of the non-single-crystal silicon is 160 mJ / c.
m ² , and 160 mJ / cm ² or more and 270 mJ /
When an energy having an energy density of less than ² cm ² is irradiated, the energy density received in the shot is 3/2 times or less the energy density received in the previous shot, and the energy having a substantial maximum energy density. Receiving 10 shots or more and 120 shots or less.

Further, according to the present invention, the energy density initially received at any point of the non-single-crystal silicon is 160 mJ / c.
m ² , and 160 mJ / cm ² or more and 270 mJ /
When an energy having an energy density of less than ² cm ² is irradiated, the energy density received in the shot is 3/2 times or less the energy density received in the previous shot, and the energy density is 270 mJ / cm ² or more. When the energy is applied, the energy density received in the shot is not more than (the maximum value of the energy density received before the previous shot + 15 mJ / cm ² ) and the energy of the substantial maximum energy density is 10 shots. A method for producing polycrystalline silicon, characterized by receiving a shot of 120 shots or less.

Further, the present invention is a method for producing polycrystalline silicon, characterized in that after irradiation with the maximum energy density, irradiation is not performed five times or more with energy lower than the substantial maximum energy density.

According to the method for producing polycrystalline silicon as described above, a crystal having a large grain size can be obtained without causing ablation due to degassing of hydrogen. Further, the present invention is a (111) -oriented polycrystalline silicon film. Further, it is (111) oriented and has a particle size of 0.3 μm or more.
It is a polycrystalline silicon film having a thickness of 2 μm or less. Also, (1
11) An oriented polycrystalline silicon film.

Such a polycrystalline silicon film exhibits good characteristics with respect to mobility, threshold change with time, and the like when it becomes a component such as a TFT. Further, the present invention is a method for manufacturing a thin film transistor using the above method for manufacturing polycrystalline silicon.

The present invention is also a method for manufacturing a liquid crystal display device using the above method for manufacturing polycrystalline silicon. Further, according to the present invention, a laser emitting unit for emitting a laser beam, an optical system for linearly shaping the laser beam emitted from the laser emitting unit, and a linear beam shaped by the optical system are irradiated. A chamber for installing an object to be processed, in a laser annealing apparatus, the optical system, the lens group for uniformizing the laser beam in one direction and the linear beam uniform in the long axis direction, Multi-reflecting means, wherein the laser light is made uniform in a direction perpendicular to the one direction, the linear beam is made uniform in the short axis direction, and a light reflecting surface is opposed to and arranged in parallel. Is a laser annealing apparatus.

With such a configuration, the laser light that has passed through the gap between the multiple reflection means is gradually expanded in the long axis direction of the linear beam even after passing through, so that the length of the light reflection means is reduced. A linear beam longer than the axial length can be obtained.

Further, the present invention is characterized in that the multiple reflection means is constituted by two independent light reflection means, and is independently movable in the traveling direction of the laser light or in the direction perpendicular to the light reflection surface. Is a laser annealing apparatus. With such a configuration, it is possible to freely control the width in the short axis direction, the skirt width, the symmetrical and the asymmetrical skirt of the linear beam to be shaped.

[0020]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments 1 and 2 will now be described in detail with respect to a method for manufacturing polycrystalline silicon and a polycrystalline silicon film formed by the method.

Embodiment 1 FIG. 1 shows a schematic structure of an excimer laser annealing apparatus. This excimer laser annealing apparatus has an optical system for forming a linear beam. In FIG. 1, an oscillation wavelength of 30 is used as a laser oscillation source.
An 8 nm XeCl excimer laser oscillation source 11 is used.
The energy beam 12 oscillated from the excimer laser oscillation source 11 passes through an optical system 13 including a homogenizer, and then is redirected by a mirror 14, and a substrate 17 mounted on an XY table 16 by an imaging lens 15.
Is imaged as a linear beam 18. The XY table 16 can move in the X-axis direction and the Y-axis direction, and scans the linear beam in the short-axis direction by moving the XY table 16 in the X-axis direction. The XY table 16 can move in synchronization with the oscillation of the laser.

First, a glass substrate (Corning part number 17)
37) An insulating film Si as an undercoat film on one main surface
After forming O _x , SiN _x, etc., the plasma CVD (Ch
Amorphous silicon was formed to a thickness of 1000 angstroms by an electronic vapor deposition.

Thereafter, an energy beam having a maximum energy density of 170 mJ / cm ² was irradiated from the upper surface of the amorphous silicon layer using a 308 nm wavelength XeCl excimer laser annealing apparatus to obtain polycrystalline silicon.

At this time, the shape of the excimer laser beam is a linear beam as shown in FIG. 2, and the energy density distribution in the minor axis direction of this linear beam is a trapezoidal distribution, which is 90% of the maximum energy density. The length L of the above portion was 500 μm, and the skirt width 1 of this trapezoid was 200 μm.

The linear beam was irradiated by scanning at a scanning pitch of 50 μm relatively in the short axis direction for each shot. When the non-single-crystal silicon has such a sloped tail, the energy density initially irradiated differs depending on the location. However, the length of the hem is 200μ
m, and the scanning per shot is 50 μm, the energy density of the energy beam initially irradiated at any point of the amorphous silicon is 170 mJ / cm ² or less,
That is, it is about 43 mJ / cm ² or less, and the energy density is gradually increased even in subsequent shots, and finally, the maximum energy density of 170 m / cm ² is irradiated. Furthermore, the maximum energy density of 9
Since the length of the portion of 0% or more is 500 μm and the scanning pitch is 50 μm, the energy of the maximum energy density is irradiated 10 times per one silicon or 11 times in the most region. It is fully crystallized.

Embodiment 2 Next, a polycrystalline silicon film was formed by changing the film thickness and the energy density of the energy beam. After forming an insulating film SiO _x , SiN _x or the like as an undercoat film on one main surface of a glass substrate,
An amorphous silicon layer was formed to a thickness of 500 angstroms by a plasma CVD method. The wavelength 30 shown in FIG.
Maximum energy density of 350 m from the upper surface of the amorphous silicon layer by an 8 nm XeCl excimer laser annealing device
Irradiation with an energy beam of J / cm ² resulted in polycrystallization. However, the beam shape of the excimer laser is a linear beam as shown in FIG. 9, and the energy density distribution in the minor axis direction of the linear beam is a trapezoidal distribution. 500 μm, hem width l on the back side of scanning
2 is 35 μm, and the length L of the portion having the maximum energy density is 4
It was set to 00 μm. Then, the linear beam was scanned relative to the substrate at a scanning pitch of 20 μm in the short axis direction for each shot, so that the energy beam was irradiated.

When the skirt is inclined in this manner, the magnitude of the energy density initially irradiated differs depending on each location of the non-single-crystal silicon, as in the first embodiment. 350mJ / c at maximum part
1/25 of m ² , ie about 14 mJ / cm ² ,
Thereafter, an energy beam having an energy density of 15 mJ / cm ² or less is irradiated at each location of the non-single-crystal silicon, and finally, energy of 90% or more of the maximum energy density of 350 mJ / cm ² is 20 mJ / cm ^2.
Irradiation is performed once, and polycrystalline silicon having a sufficient particle size can be obtained. Thereafter, on the rear side of the beam scanning, irradiation is performed at a low energy density of less than 90% of the maximum energy density, in this case, once or in some cases twice.

The energy density distribution in the minor axis direction of the energy beam is not limited to the trapezoidal shape as described above, but can be applied to various shapes. For example, a Gaussian distribution as shown in FIG. 8A, a distribution having a plurality of peaks as shown in FIG. 8B, or a stepwise distribution as shown in FIG. Can be

Further, in the above-described embodiment, since the laser annealing for polycrystallization and the dehydrogenation were performed, the dehydrogenation step could be omitted. However, it is of course possible to perform laser annealing by the method of the present invention after performing dehydrogenation in advance.

According to such a method, polycrystalline silicon having an average particle size of 3000 Å (0.3 μm) or more and 12000 Å (1.2 μm) or less was obtained, although the grain size of each crystal grain varied (SE).
M observation). Note that the crystal grains of polycrystalline silicon are flat in the film thickness direction, and are substantially circular when the silicon film is viewed from a plane. The grain size is thus defined as the size of the crystal when the polycrystalline silicon film is viewed from a plane. However, each crystal is not completely circular, and there are various methods for obtaining the particle size. In this embodiment, the grain size is determined by first sco-etching the polycrystalline silicon film to clarify each crystal and calculating the planar area of each crystal grain. Then, assuming that each crystal is a perfect circle, the diameter of each crystal is calculated based on the area. The diameter of this assumed circle is defined as the diameter of each crystal grain. The average value of the grain sizes of the plurality of crystals obtained in this manner was defined as the average grain size of the polycrystalline silicon film.

Furthermore, the polycrystalline silicon film thus formed is oriented in the (111) orientation, and the ratio of the diffraction intensity F ₁₁₁ of ( ₁₁₁ ) to the diffraction intensity F ₂₂₀ of (220) by X-ray diffraction is: , 0 ≦ F ₁₁₁ / F ₂₂₂ ≦ 0.3.

Hereinafter, experiments up to the present invention including Examples 1 and 2 will be described in detail. First, non-single-crystal silicon was irradiated with energy beams having different energy densities in two stages to examine the effect of hydrogen degassing.

After 800 Å of amorphous silicon is formed on one main surface of a glass substrate by plasma CVD, a dose of 5 Å is formed by an amorphous separation type ion implantation apparatus.
A sample was prepared by injecting phosphorus of × 10 ¹⁵ / cm ² . Then, the amorphous silicon thin film was subjected to polycrystallization using the excimer laser annealing apparatus shown in FIG.

First, energy density, 100, 110, 120, 130, 140, 15 is used as the first stage irradiation.
0, 155, 160, 165, 170, 180 mJ / c
The sample was irradiated with an excimer laser of m ² one shot at a time. As a result, damage due to hydrogen degassing was observed on the sample surface at 160 mJ / cm ² or more. FIG. 2 shows the change in the sheet resistance at this time. Amorphous silicon film thickness of 50
In the range from 0 Å to 1000 Å, the relationship between the irradiation energy density in the first stage and the damage due to hydrogen degassing was almost the same as the result of this experiment. From the plot of the black marks in FIG. 2, it can be seen that the first-stage irradiation must have an energy density of less than 160 Jm / cm ² .

Further, an experiment was conducted in which a linear excimer laser was irradiated while scanning in the short axis direction (X-axis direction). FIG. 3 shows an energy density distribution of a short-axis direction cross section of the linear energy beam. This energy density distribution shows a top-flat trapezoidal distribution.
The length of the portion having a substantial maximum energy density, that is, the length of a portion having a so-called 90% or more of the maximum energy density, was defined as L. The short-axis end has a so-called skirt having a strength lower than the maximum energy density. Here, the skirt is a portion of less than 90% of the maximum energy density, and the length of the skirt in the minor axis direction is defined as a skirt width l. The skirt width 1 can be changed by changing the optical system. Here, the reason why the substantial maximum energy density is specified to be 90% or more of the maximum energy density is that crystallization differs depending on the energy density distribution when one shot of an energy beam is irradiated, and the maximum energy density is 100%. This is because the size of the crystal grains in the region irradiated with the energy density of from 90% to 90% is almost the same. That is, the region irradiated with energy having an energy density of less than 90% is 1
This is because the crystal grain size is extremely incomplete compared to the crystal grain size in the region irradiated with the energy having the energy density of 00%.

Using a beam having the energy density distribution shown in FIG. 3 with a thickness of amorphous silicon of 500 Å, a scanning pitch P per shot of 20 μm and a foot width l of the beam of 140 μm to 700
It was changed in the range of μm. Thereby, the amount of increase in energy density can be changed. FIG. 5 shows the relationship between the amount of increase in energy density and the ablation energy due to hydrogen degassing. Ablation energy is the energy density at which the silicon film undergoes ablation. From the figure, the energy increase is 15 mJ / cm ²
If less than the desired maximum energy density, 325 mJ
It can be seen that polycrystalline silicon having a large grain size can be obtained without ablation even at an energy density of / cm ² or more.

Incidentally, polycrystalline silicon is used as an active layer of a polycrystalline silicon thin film transistor, and needs to be crystallized at a higher energy density. FIG. 4 shows the relationship between the maximum energy density and the grain size of polycrystalline silicon. 15 mJ / c energy increase per shot
m ² and the maximum energy density is 250
By irradiating an energy beam in the range of ~350mJ / cm ² is the particle size of the polycrystalline silicon crystallized. It can be seen that the particle size increases as the maximum energy increases. Thus, the thickness of the amorphous silicon is 500 to 8
When it is within the range of 00 Å, the maximum energy density is preferably set to 325 mJ / cm ² or more.

Next, in order to examine the optimum value of the number of times of irradiation of a portion having 90% or more of the maximum energy density, the number of times of irradiation is set to ² at a constant energy (for example, 350 mJ / cm ² ).
To 140 times. By changing the length L of the beam shape shown in FIG. 3, the number of times that one portion of silicon is irradiated with the portion having the maximum energy density changes. FIG.
The relationship between the particle size of polycrystalline silicon and the number of irradiations is shown in FIG. If the number of times of irradiation of the maximum energy is less than 10, the particles are not melted completely and the particle size remains small. If the number of irradiations is more than 120, a reaction layer with the base film is formed, and the base / p-Si interface is formed. Ablation occurs due to roughening. Therefore, it was found that if the length L is set so that the number of times of irradiation of the portion having the maximum energy density is in the range of 10 to 120 times, good crystalline polycrystalline silicon can be obtained.

As described above, when the amount of increase in the energy density per shot is set to 15 mJ / cm ² or less, an ablation does not occur and a good polycrystalline silicon film can be obtained. It can be seen that the ablation energy converges at about 270 mJ / cm ² as the energy increase is increased.
Therefore, it can be seen that ablation does not occur until the amount reaches 270 mJ / cm ² even if the increase is not less than 15 mJ / cm ² .

Therefore, when irradiating with an energy density of less than 270 mJ / cm ^{2, the} following experiment was conducted to confirm the amount of increase up to which a good polycrystalline silicon film can be obtained without ablation. .

As a first step, an energy density of 10
0, 110, 120, 130, 140, 150 mJ / c
When the m ² excimer laser was irradiated one shot at a time, 160 mJ /
An excimer laser of cm ² was irradiated. When the first-stage irradiation was 100 mJ / cm ² , the film surface was damaged by hydrogen degassing, but when the first-stage irradiation was 110 to 150 mJ / cm ² , the second-stage energy was used. Irradiation with an excimer laser at a density of 160 mJ / cm ² showed no damage due to hydrogen degassing.

In the first stage, an energy density of 150
After irradiation with an excimer laser of mJ / cm ² , energy densities 160, 170, 180, 190,
Was irradiated 200,210,220,230mJ / cm ² of the excimer laser, respectively, the second stage of irradiation in the case of 230 mJ / cm ² was observed damage by hydrogen degassing the sample surface, 220 mJ from 160 / C
up to m ² damage did not occur. FIG. 7 shows the change in the sheet resistance at this time.

According to this experimental result, even if the energy beam is normally irradiated with a high energy density (160 mJ / cm ² or more) that may damage the silicon film when the irradiation is performed, a low intensity energy beam is irradiated beforehand. It can be seen that polycrystallization can be promoted without damaging the silicon.
From the above experimental results, 160 mJ / cm ² or more and 270 m / cm ²
In the case of irradiation with energy of cm ² or less energy density, even 15 mJ / cm ² or more increase if the energy density of 3/2 times the energy density received in the shot previously, hydrogen It was found that damage due to degassing could be prevented.

Further, the bottom of the energy density distribution in the scanning direction has been described above. However, in order to obtain polycrystalline silicon having higher crystallinity, the energy density distribution on the rear side in the scanning direction is also important. Become. It is found that if the irradiation is performed five times or more at a lower energy density after the irradiation at the maximum energy density, the crystallization rate of polycrystalline silicon crystallized at the maximum energy is reduced to about 70%. Was. From this experimental result, it is desirable that the energy density distribution as shown in FIG. 9 is an energy density distribution capable of obtaining polycrystalline silicon having high crystallinity, and the number of times of irradiation by the tail on the rear side is less than 5 times.

(Embodiment 3) A thin film transistor using a polycrystalline silicon film and a method of manufacturing a liquid crystal display device using the thin film transistor will be described in detail below.

FIG. 10 shows a structure of a liquid crystal display device using a thin film transistor in which only the ohmic contact portion is made of polycrystalline silicon and the channel portion is made of amorphous silicon.
First, the configuration of the array substrate 60 including the thin film transistors will be described. A light-shielding film 42 is formed in a matrix on a substrate 41, and an insulating film 43 is formed thereon. Further, a pixel electrode 48 is formed in the pixel region, and a source electrode 46 connected to the pixel electrode 48 is formed. In the same layer as the source electrode 46, a drain electrode 47 and a signal line (not shown) are formed integrally with the drain electrode 47. Then, a semiconductor layer is formed so as to be connected to both the source electrode 46 and the drain electrode 47. The semiconductor layer is connected to the source electrode 46 and the drain electrode 47, and is not connected to the ohmic contact portions 50 and 51 made of polycrystalline silicon. It is divided into channel portions 49 made of crystalline silicon. Further, a first silicon nitride film 52 as a gate insulating film 54 and a second
, A gate electrode 57, and an aluminum film 55 and a molybdenum film 56 which are integrally formed with the gate electrode as scanning lines (not shown). Thus, a thin film transistor is formed on the array substrate 60.

Further, an insulating protective film 59 is formed on the thin film transistor, and an alignment film 64 is formed on the entire substrate. Further, the liquid crystal display device includes the array substrate 60 and the opposing substrate 63. The opposing substrate 63 constituting the opposing substrate 63 has an opposing electrode 62 and an alignment film 65 formed on a substrate 61.

The array substrate 60 and the counter substrate 63 are opposed to each other with the respective alignment films 64 and 65 facing inside, and a liquid crystal 68 is sealed in the gap therebetween. Further, polarizing plates 66 and 67 are formed on outer surfaces of the array substrate 60 and the counter substrate 63, respectively, to constitute a liquid crystal display device.

Next, the thin film transistor and the liquid crystal display device will be described in order of the manufacturing process. First, a method for manufacturing the array substrate 60 including the thin film transistors will be described. As shown in FIG. 11, a substrate 41 made of glass is used.
A light-shielding film 42 and an insulating film 43 made of silicon oxide were formed on one main surface. And ITO by sputtering method
A transparent conductive film made of (Indium Tin Oxide) and a metal film of a molybdenum-tungsten alloy are formed and laminated by photolithography, and the pixel electrode 48, the source electrode 46, and the drain electrode 4 are formed.
7. Further, a signal line (not shown) was formed. Next, amorphous silicon and silicon nitride are applied to cover the source electrode 46, the drain electrode 47 and the pixel electrode 48, respectively.
A semiconductor layer for sequentially forming an ohmic contact portion and a channel portion by patterning by photolithography and subsequently forming a silicon nitride film to be the first silicon nitride film 52 is formed to a thickness of 00 Å by plasma CVD. did.

Next, as shown in FIG. 12, a silicon nitride film which will later become the second silicon nitride
A film was formed to a thickness of 3000 angstroms by Method D. Further, aluminum and molybdenum are sequentially laminated by sputtering, and molybdenum and aluminum are patterned by photolithography, as shown in FIG.
A gate electrode 57 made of a molybdenum film 56 and an aluminum film 55 and a scanning line (not shown) were formed. further,
The two layers of the silicon nitride film are patterned in the same pattern as the gate electrode 57 to form a gate insulating film 54 composed of the first silicon nitride film 52 and the second silicon nitride film 53.

Next, phosphorus with an acceleration voltage of 60 kV and a total dose of 5 × 10 ¹⁵ / cm ² is added in a self-aligned manner using a gate electrode 57 as a mask by a non-separation type ion implantation apparatus. 51 is an n-type amorphous silicon layer.

After that, an energy beam having an energy density of 170 mJ / cm ² is irradiated from the upper surface of the semiconductor layer by a 308 nm wavelength XeCl excimer laser annealing apparatus, and the ohmic contact portion 5 doped with phosphorus is irradiated.
0 and 51 are polycrystalline silicon. This energy beam irradiation method is as described in the first embodiment.

Then, as shown in FIG. 14, silicon nitride or the like is formed on the entire surface of the substrate 41 by, for example, a plasma CVD apparatus, and is patterned to form an insulating protective film 59. Further, since the molybdenum-tungsten alloy metal film 45 remains on the pixel electrode 48 in the pixel region, it is removed by etching together with the insulating protective film 59. Further, an alignment film 64 (see FIG. 10) made of polyimide is applied to the entire surface of the substrate.
An alignment process was performed on the alignment film to obtain an array substrate 60.

Next, a method for manufacturing the counter substrate 63 in FIG. 10 will be described. Counter electrode 62 made of ITO on substrate 61
Is formed, and an alignment film 65 made of polyimide is applied. Then, an alignment process is performed on the alignment film 65 to form the counter substrate 6.
3 was obtained.

Then, the array substrate 60 and the counter substrate 6
3 were arranged facing each other with the alignment films 64 and 65 inside, and were sealed with a sealing material except for the liquid crystal injection port. Further, liquid crystal is injected from the injection port to seal the injection port. Finally, polarizing plates 66 and 67 were attached to the outer surfaces of the array substrate 60 and the counter substrate 63, respectively, to form a liquid crystal display.

As described above, in the case of a thin film transistor using amorphous silicon for a channel portion, conventionally, a step of performing dehydrogenation before irradiation with an energy beam and a step of adding hydrogen after irradiation with an energy beam are required. However, according to this embodiment, the first irradiation is performed by setting the maximum energy density of the energy beam to 170 mJ / cm ² , setting the foot of the energy beam in the scanning direction to 200 μm, and setting the width of one shot scan to 50 μm. The maximum energy density is about 43 mJ / cm ² even at the maximum location, and the energy density applied to one location of the silicon to be polycrystallized gradually increases at an increase rate of 3/2 times or less. Thus, a high-quality polycrystalline silicon film having a large crystal grain size without damage can be obtained. Further, in this method, since the gate electrode serves as a mask and hydrogen in the channel portion does not escape, there is no need for a step of newly adding hydrogen.

(Embodiment 4) This embodiment is different from Embodiment 3 in the structure of the thin film transistor, and is a thin film transistor having a channel portion made of polycrystalline silicon, and a liquid crystal display device using this thin film transistor.

FIG. 14 shows the structure of the thin film transistor and the liquid crystal display device of this embodiment. First, a semiconductor layer is formed on an array substrate 88 including a thin film transistor after an insulating film is formed as an undercoat layer on a substrate 71, and the semiconductor layer includes a channel portion 72, a source region 73, and a drain region 74. In. A gate insulating film 75 is formed thereon, and a gate electrode 76 and a scanning line (not shown) are formed integrally with the gate electrode 76 in a region on the gate insulating film 75 corresponding to the channel portion 72. Further, the interlayer insulating film 7 is formed so as to cover the gate electrode 76 and the scanning line.
7 are formed. Then, the source region 73 and the drain region 74 of the interlayer insulating film 77 and the gate insulating film 75 are formed.
Contact holes 79 and 80 are formed thereon. The source electrode 83 and the drain electrode 84 formed on the interlayer insulating film 77 are connected to the source region 73 and the drain region 74 via contact holes 79 and 80, respectively. Thus, the thin film transistor is formed on the array substrate 88. The source electrode 83 is connected to the pixel electrode 78 formed in the pixel area. In addition, a signal line (not shown) is formed integrally with the drain electrode 74 on the interlayer insulating film. An insulating protective film 86 is coated so as to cover them. Further, an alignment film 87 is formed on the entire surface of the substrate to obtain an array substrate 88 including a thin film transistor.

Next, the liquid crystal display device comprises an array substrate 88 and an opposing substrate 90.
An opposing electrode 92 and an alignment film 93 are formed on one main surface of the substrate 1.

A liquid crystal 94 is interposed between the array substrate 88 and the opposing substrate 90. Further, polarizing plates 95 and 96 are formed on the outer surfaces of the array substrate 88 and the counter substrate 90, respectively.

If necessary, a color filter, a light-shielding film, or the like may be formed on the array substrate 88 or the counter substrate 90. Thus, a liquid crystal display device is formed. Next, a method of manufacturing the thin film transistor and the liquid crystal display device will be sequentially described step by step.

First, as shown in FIG. 16, an insulating film SiO _x , SiN _x or the like is formed as an undercoat film (not shown) on one main surface of a substrate 71 made of glass, and then amorphous silicon is formed by plasma CVD. The layer was formed to a thickness of 500 Å. XeCl with a wavelength of 308 nm
An energy beam having an energy density of 350 mJ / cm ² was irradiated from the upper surface of the amorphous silicon layer by an excimer laser annealing apparatus to form a polycrystalline silicon layer. The irradiation method at this time is as described in Example 2.

Next, as shown in FIG. 17, the polycrystalline silicon layer was patterned by photolithography, and a gate insulating film 75 made of silicon oxide was laminated to a thickness of 800 angstroms by a plasma CVD method.

Then, a molybdenum-tantalum alloy was formed by sputtering and patterned by photolithography to form a gate electrode 76 and a scanning line (not shown) integrally with the gate electrode.

Then, using the gate electrode 76 as a mask,
Phosphorus at an accelerating voltage of 80 kV and a dose of 5 × 10 ¹⁵ / cm ² is added to a region where the gate electrode is not located at the upper portion in a self-aligned manner by an amorphous separation type ion implanter, and polycrystalline silicon doped with phosphorus is added. The source and drain regions 73 and 74 of n-type polycrystalline silicon were formed.

Next, as shown in FIG. 18, an interlayer insulating film 77 such as silicon oxide was coated thereon by, for example, a plasma CVD method. Next, the interlayer insulating film 77 is formed by sputtering.
A transparent conductive film made of ITO was laminated thereon and patterned by photolithography to form a pixel electrode 78.

Then, the source region 73 and the drain region 7
The contact holes 79 and 80 were formed in the gate insulating film 75 and the interlayer insulating film 77 on No. 4. Then, as shown in FIG. 15, an aluminum layer 81 and a molybdenum layer 82 were stacked by a sputtering method, and were patterned by photolithography to form a source electrode 83, a drain electrode 84, and a signal line (not shown).

Further, the whole is covered with an insulating protective film 86 such as silicon nitride by, for example, a plasma CVD method, the peripheral electrodes and the pixel electrodes 78 are removed by etching, and an alignment film 87 is formed to form an array substrate 87 including thin film transistors. Formed.

Further, using this array substrate, a counter substrate 90 was prepared in the same procedure as in Example 3, and a liquid crystal display device was formed.

(Embodiment 5) Next, a laser annealing apparatus will be described in detail. FIG. 19 shows a configuration including a chamber in the excimer laser annealing apparatus shown in FIG.
The configuration of this device will be described sequentially along the optical path of the laser light. Excimer laser oscillation source 1 as laser light emitting means
1, a collimator (not shown) for converting the laser light into parallel light, an optical system 13 for equalizing the intensity of the linear beam formed by shaping the laser light passing through the collimator in the major axis direction and the minor axis direction, and A mirror 14 for changing the angle of the converted laser light, an imaging lens 15 for condensing the laser light into a desired linear shape, and a substrate 17 as an object to be processed are arranged, and a linear beam is irradiated. Chamber 1, which is the space to be
09. An XY table 16 movable two-dimensionally is arranged in the chamber 109. Further, the chamber 109 is provided with a transmission window 108 for transmitting the linear beam so that the linear beam is incident on the chamber 109, and a gate valve G for shutting off the external beam, and performing an annealing process in an inert atmosphere. N2 gas for chamber 10
The N2 cylinder introduced into 9 is connected via a valve. Further, a vacuum pump such as a turbo molecular pump is connected through a valve so that the inside of the chamber 109 can be evacuated.

The optical system 13 and the imaging lens 15 in FIG. 19 will be described in more detail with reference to FIG.
In FIG. 20, the mirror 14 is omitted for simplification. Further, the traveling direction of the laser light in the following description refers to the direction of the path that is shaped from the emission of the laser light to the formation of a linear beam irradiated on the substrate 17 by each means. . (Refer to FIG. 20) To explain in the direction of travel of the laser beam, first, a slit mask 117 having a plurality of slits is arranged. This slit mask 117
Next, a cylindrical array lens 118 is arranged. The slit mask 117 has a slit that matches the direction of the ridge line of the cylindrical array lens 118 and corresponds to the lens pattern of the cylindrical array lens. The final shaped linear beam 18
Let the long axis direction be the Y direction and the short axis direction be the X direction,
The slit of the slit mask 117 and the ridge line of the cylindrical array lens 118 are arranged so as to be parallel to the X direction. Further, a first cylindrical lens 119 having a ridge line in the X direction is disposed behind this, and a second cylindrical lens 122 having a ridge line in the Y direction is disposed.

Behind this, as the multiple reflection means 130, two light reflection means 123a and 123b arranged in parallel with the light reflection surfaces facing each other are arranged. This 2
The gap between the light reflecting means 123a and 123b is an optical path of the laser light, and the incident laser light travels in the traveling direction while repeating multiple reflections on the light reflecting surface, and has a uniform density distribution in the X direction. In this state, the light is emitted. The light reflecting means 123a and 123b are provided with driving mechanisms 125a and 125b for driving the light reflecting means 123a and 123b in the traveling direction, and driving mechanisms 126a and 126b for driving the light reflecting means 123a and 123b in a direction perpendicular to the light reflecting surface. . These drive mechanisms are constituted by actuators using, for example, piezo elements or pulse motors. Further, an imaging lens 15 is arranged so as to collect the laser light emitted from the multiple reflection means 130 in the X direction.

These components are arranged in the following positional relationship. The focal length of the cylindrical array lens 118 is f ₁ , the focal length of the first cylindrical lens 119 is f ₂ , the focal length of the second cylindrical lens 122 is f ₃ , the focal length of the imaging lens 15 is f ₄ , and the focal length of the imaging lens is Assuming that the imaging magnification is m, an imaging lens is disposed k ₂ ahead of the irradiation surface on which the linear beam is irradiated on the substrate 17,
Further, the exit end of the multiple reflection means is located k ₁ ahead of the imaging lens. (However, k ₁ = (1 + 1 / m) · f
₄ , k ₂ = (1 + m) · f ₄ ) Further, a second cylindrical lens 122 is arranged f ₃ ahead of the entrance end of the multiple reflection means, and a first cylindrical lens 119 is arranged f ₂ ahead of the irradiation surface. Further, the cylindrical array lens 118 is disposed just before the first cylindrical lens 119, slit mask 117 is disposed in front f _1. When the width of the slit of the slit mask 117 is D, the length LY of the linear beam in the Y direction is represented by the following equation (1).

L _Y = f ₂ · D / f ₁ (1) When the linear beam is arranged in this positional relationship, the linear beam is exactly imaged on the irradiation surface.

Next, a process of shaping a laser beam into a linear beam in the laser annealing apparatus of the present invention will be described. First, the laser light that has passed through the slit mask 117 is split in the Y direction by the cylindrical array lens 118, and the laser light split by the first cylindrical lens 119 is superimposed to make the intensity of the laser light in the Y direction uniform. . Then, from this position, the laser light gradually spreads in the Y direction. Further, the cylindrical array lens 11 is formed by the slit mask 117.
By controlling the laser beam incident on 8, it is possible to obtain a linear beam having no region (foot) with a low energy intensity at the end in the Y direction of the finally shaped linear beam.

Next, in order to make the laser beam incident on the incident end of the multiple reflection means 130, the second cylindrical lens 1
22 converges the laser light in the X direction. Then, the laser light incident on the multiple reflection means 130 repeats multiple reflections to make the intensity of the laser light in the X direction uniform.

Next, the laser light emitted from the multiple reflection means 130 and made uniform in both the X and Y directions is applied to the imaging lens 1.
5 forms an image on the irradiation surface. And the chamber 109
The substrate 17 is irradiated with a linear beam in an N ₂ atmosphere.

Since the length of the laser light in the Y direction increases as the distance from the cylindrical array lens 118 increases, the length of the laser light when emitted is longer than the length in the Y direction when the light is incident on the multiple reflection means 130. And
Further, after the light is emitted from the multiple reflection means 130, the length further increases in the Y direction. With this configuration, it is not necessary to use a kaleidoscope having a length substantially the same as the length of the linear beam in the Y direction unlike the related art, and the apparatus can be downsized. That is, instead of making the X and Y directions uniform at the same place as in the kaleidoscope, in this embodiment, Y
By making the laser beam in the direction uniform in the front and expanding it in the Y direction, and then making it uniform in the X direction, the cylindrical array lens 118 and the first cylindrical lens 11 are made uniform.
By taking the distance from the lens group consisting of 9 to the irradiation surface, the length of the linear beam in the Y direction can be made longer than the size of the optical system. Thus, the present invention provides X,
The feature is that the uniformization in the Y direction is performed at different positions.
In the case of the present invention, as the multiple reflection means 130,
Instead of the two light reflecting means 123a and 123b, a cylindrical one such as a kaleidoscope may be used. In this case, a light reflecting means which does not cause multiple reflection in the Y direction (vertical direction in the figure) may be used. Must be used.

The two light reflecting means 123a and 123b constituting the multi-reflecting means 130 are provided with a driving mechanism so that they can be driven in the traveling direction of the laser light and in the direction perpendicular to the light reflecting surface. These two light reflecting means 123a, 1
The relationship with the linear beam shaped when moving 23b will be described in detail below.

[0080] First, light reflecting means 123a, the move to widen the gaps 123b, it is possible to vary the width L _X in the X direction of the linear beam. Further, by moving in the traveling direction, the width of a region having a low energy density, that is, the so-called skirt width can be changed in the energy density distribution of the linear beam in the X direction. Two light reflecting means 123a, 123
Assuming that the width of the gap b is s and the imaging magnification of the imaging lens 107 is m, the width L of the linear beam in the X direction on the irradiation surface is
_X is represented by the following equation (2).

L _X = s · m (2) On the other hand, when the two light reflecting means 123a and 123b are moved forward in the traveling direction of the laser beam, a skirt is formed in the X direction of the linear beam. can do. In this case, if the two light reflecting means 123a and 123b are moved by the same amount, the linear beam can have skirts on both sides in the X direction. If only one side is moved, the linear beam can be moved in the X direction. Can have a hem on one side. Further, by changing the amount of movement between the two light reflecting units 123a and 123b, it is possible to provide different widths for the skirt in the X direction between the front and rear in the scanning direction of the linear beam.

As shown in FIG. 21, when the light reflecting means 123a is moved by x in the direction of incidence of the laser beam, the intensity distribution of the laser beam in the X direction of the linear beam on the irradiation surface becomes The strength is tapered with a hem at the edge. This is because the light reflecting means 123a should originally be reflected by the light reflecting means 123a because the light reflecting means 123a is shifted toward the laser beam incident side thereof in the traveling direction of the laser light. This is because the emitted laser light is focused by the imaging lens 15 symmetrically with respect to the laser optical axis. That is, here, the position of the irradiation surface and the position of the imaging surface are made to be different from each other asymmetrically with respect to the laser optical axis. FIG.
Explaining in 1, the irradiation surface is an image forming surface with respect to the light reflecting means 123b, but is displaced by x from the originally set position to the laser light emission side along the traveling direction of the laser light. Light reflecting means 123a
This means that it is shifted from the imaging plane to the emission side in the traveling direction.
The above phenomenon is interpreted as that the position of the irradiation surface and the position of the image formation surface are asymmetrically arranged in the X direction with respect to the laser optical axis. Therefore, in this embodiment, the light reflecting means 1
The image forming surface for the light reflecting means 123b and the image forming surface for the light reflecting means 123b are separately discussed.

Here, the skirt width l of the laser beam intensity at the edge portion on the irradiation surface is equal to the first cylindrical lens 119.
Assuming that the beam diameter of the laser beam at D is D _in , the focal length of the first cylindrical lens 119 is f ₃ , and the light reflecting means 123a is displaced by x in the forward direction of the laser beam, the following equation (3) It is represented by 1 = (D _in / 2 · f ₃ ) · x · m (3) When only one of the light reflecting means 123a and 123b is moved, the edge portion is symmetrical to the laser optical axis. Will have. Also, the light reflecting means 123a, 12
When both 3b are moved, both edge portions E have skirts on the irradiation surface of the laser beam in the X direction of the linear beam. That is, the irradiation energy distribution can be made variable by the above equation (3).

According to the laser annealing apparatus of the present invention, the size of the portion corresponding to the Y direction
The length of the desired linear beam can be made smaller than the length in the Y direction, the energy loss can be reduced, and the intensity distribution of the linear beam on the irradiation surface can be freely controlled. Specifically, it is possible to control the beam width in the X direction, the skirt width in the X-direction cross section, the symmetric and asymmetric skirts, the sharpness of the hem in the Y-direction cross section, and the like.

By using such a laser annealing apparatus, it becomes possible to suitably form the energy density distribution of the linear beam in the above-described method for producing polycrystalline silicon.

However, the linear beam in the method of manufacturing polycrystalline silicon shown in the first and second embodiments can be realized by an apparatus other than the apparatus of the third embodiment. For example, X,
It goes without saying that a laser annealing apparatus using a kaleidoscope that makes uniform in both Y directions at the same position can be used. For example, the imaging lens may be zoomed even if the kaleidoscope or the substrate is moved along the traveling direction of the laser light, or a transparent flat plate having a specific refractive index is inserted into the optical path of the laser light. good. These have the same effect of shifting the image plane parallel to the substrate, and FIG. 22 shows a case where a transparent flat plate is inserted. In this case, a trapezoidal energy density distribution as shown in FIG. 3 is obtained on the substrate surface to be irradiated. In addition, a prism having a specific refractive index is inserted into the optical path of the laser light,
By irradiating the substrate with the laser beam in an oblique direction, the imaging plane can be shifted in a direction intersecting with the substrate. FIG. 23 shows a case where a prism is inserted. In such a case, an asymmetrical energy density distribution is obtained.

[0087]

According to the present invention, it is possible to obtain uniform, high-quality polycrystalline silicon having a large crystal grain size without causing film damage due to ablation when forming polycrystalline silicon.

In addition, after crystallization at the maximum energy density, irradiation is not performed many times with lower energy, so that deterioration of crystallinity can be prevented. In the case of a thin film transistor in which the channel portion is made of amorphous silicon and the ohmic contact portion is made of polycrystalline silicon, the channel portion is masked by the gate electrode when polycrystallizing the ohmic contact portion, so that dehydrogenation is performed. Is not performed,
It is possible to omit the step of adding hydrogen to the channel portion again.

Further, according to the laser annealing apparatus of the present invention, the apparatus itself can be downsized. In addition, it is possible to freely control the intensity distribution on the irradiation surface of the linear beam with small energy loss. Specifically, the beam width in the X direction, the skirt width in the cross section in the X direction, the symmetrical
It is possible to control the sharpness of the skirt of the section in the Y direction.

[Brief description of the drawings]

FIG. 1 is an external view of an excimer laser annealing apparatus used in the present invention.

FIG. 2 is a diagram showing a relationship between an energy density at the time of beam irradiation and sheet resistance and film damage in an experiment of the present invention.

FIG. 3 is an energy density distribution of a cross section in the scanning direction of a linear energy beam in an experiment of the present invention.

FIG. 4 is a diagram showing a relationship between a maximum energy density and a grain size of formed polycrystalline silicon in an experiment of the present invention.

FIG. 5 is a diagram showing the relationship between the energy increase width at the beam end and the ablation energy in the experiment of the present invention.

FIG. 6 is a diagram showing the relationship between the maximum energy density and the grain size of the formed polycrystalline silicon in an experiment of the present invention.

FIG. 7 shows the relationship between the energy density of the irradiation beam at the second stage, the sheet resistance, and the film damage after irradiating a beam having an energy density of 150 mJ / cm ² as the irradiation at the first stage in the experiment of the present invention. FIG.

FIG. 8A is a diagram showing a Gaussian distribution of the energy density of a cross section in the scanning direction of a linear energy beam;
(B) is a diagram showing a distribution having a plurality of peaks, and (c) is a diagram showing a stepwise distribution.

FIG. 9 shows an energy density distribution of a cross section in the scanning direction of a linear energy beam in an experiment of the present invention.

FIG. 10 is a sectional view of a liquid crystal display device according to the first embodiment of the present invention.

11 is a diagram showing a manufacturing process of the liquid crystal display device in FIG.

12 is a diagram showing a manufacturing process of the liquid crystal display device in FIG.

13 is a diagram showing a manufacturing process of the liquid crystal display device in FIG.

14 is a diagram showing a manufacturing process of the liquid crystal display device in FIG.

FIG. 15 is a sectional view of a liquid crystal display device according to (Example 2) of the present invention.

FIG. 16 is a diagram illustrating a manufacturing process of the array substrate in FIG. 15;

FIG. 17 is a view illustrating a manufacturing process of the array substrate in FIG. 15;

FIG. 18 is a diagram showing a manufacturing process of the array substrate in FIG.

FIG. 19 is a schematic view of a laser annealing apparatus according to the present invention.

FIG. 20 is a diagram showing an optical system of a laser annealing apparatus according to the present invention.

FIG. 21 is a diagram illustrating an arrangement of an optical system according to an embodiment of the present invention.

FIG. 22 is a diagram in which a transparent flat plate is inserted in a laser beam path according to an embodiment of the present invention.

FIG. 23 is a diagram in which a prism is inserted in a laser beam path according to the embodiment of the present invention.

[Explanation of symbols]

 18 Linear beam 17, 41, 61, 71 Substrate 49, 72 Channel part 50, 51 Ohmic contact part 73 Source region 74 Drain region 11 Excimer laser oscillation source 13 Optical system 16 XY Table 109: Chamber 117: Slit mask 118: Cylindrical array lens 119, 122: Cylindrical lens 130: Multiple reflection means

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁶ Identification code Agency reference number FI Technical indication location H01L 21/336 (72) Inventor Hiroshi Ito 33 Shinisogocho, Isogo-ku, Yokohama-shi, Kanagawa Pref. Inside Toshiba Production Technology Research Institute (72) Inventor Akitaka Yamada 33, Shinisogo-cho, Isogo-ku, Yokohama-shi, Kanagawa Prefecture Inside Toshiba Production Technology Research Institute (72) Inventor Shuichi Ishida 33, Shinisogo-cho, Isogo-ku, Yokohama-shi, Kanagawa Prefecture Inside Toshiba Production Technology Laboratory Co., Ltd.

Claims (27)

[Claims] 1. A non-single-crystal silicon formed on a substrate is irradiated with an energy beam by scanning a predetermined distance relative to the substrate each time one shot is irradiated, thereby polycrystallizing the non-single-crystal silicon. In the method for producing polycrystalline silicon, a given point of the non-single-crystal silicon initially receives an energy density of less than 160 mJ / cm ² , and thereafter, an energy having an energy density of 160 mJ / cm ² or more. In the case of irradiation, the size is not more than the maximum value of the energy density received before the previous shot + 15 mJ / cm ² , and the arbitrary point receives the energy of the substantial maximum energy density from 10 shots to 120 shots. A method for producing polycrystalline silicon, comprising: 2. A non-single-crystal silicon formed on a substrate is irradiated with an energy beam by scanning a predetermined distance relative to the substrate every irradiation of one shot, thereby polycrystallizing the non-single-crystal silicon. the method of manufacturing a polycrystalline silicon comprising the step of, energy density any point receives first of the non-single-crystal silicon is less than 160 mJ / cm ^2, after the 160 mJ / cm ² or more 270mJ / cm ² less than that When the energy of the energy density is irradiated, the energy density received in the shot is 3/2 times or less the energy density received before the previous shot, and the arbitrary point is substantially equal to the maximum energy density. A method for producing polycrystalline silicon, comprising receiving energy from 10 shots to 120 shots. 3. The non-single-crystal silicon formed on the substrate is irradiated with an energy beam by scanning a predetermined distance relative to the substrate each time one shot is irradiated, thereby polycrystallizing the non-single-crystal silicon. the method of manufacturing a polycrystalline silicon having a step of, energy density any point receives first of the non-single-crystal silicon is less than 160 mJ / cm ^2, after the 160 mJ / cm ² or more 270mJ / cm ² less than that When the energy of the energy density is irradiated, the energy density received in the shot is 3/2 times or less of the energy density received in the previous shot and 270 m
When energy having an energy density of J / cm ² or more is irradiated, the energy density received in the shot is the maximum value of the energy density received in the previous shot + 15 m.
A method for producing polycrystalline silicon, wherein the size is J / cm ² or less, and the arbitrary point receives energy having a substantial maximum energy density of 10 shots or more and 120 shots or less. 4. The method according to claim 1, wherein the substantial maximum energy density is 90% or more of the maximum energy density. 5. The method according to claim 1, wherein an energy density distribution of the energy beam in a scanning direction is trapezoidal. 6. The method according to claim 1, wherein an energy density distribution of the energy beam in a scanning direction is a Gaussian distribution. 7. The energy density distribution in the scanning direction of the energy beam, wherein a portion having a substantial maximum energy density has a length of 10 to 120 times the predetermined distance. 4. The method for producing polycrystalline silicon according to any one of items 2 and 3. 8. The method according to claim 1, wherein a length of the portion having no substantial maximum energy density behind the portion having substantial substantial energy density in the scanning direction is less than five times the predetermined distance. 4. The method for producing polycrystalline silicon according to claim 1, 2 or 3, wherein: 9. The method for producing polycrystalline silicon according to claim 1, wherein said non-single-crystal silicon is amorphous silicon. 10. The energy beam according to claim 1, wherein the energy beam is a linear beam having a short axis in the scanning direction on the irradiation surface and a long axis in a direction perpendicular to the scanning direction.
4. The method for producing polycrystalline silicon according to any one of 2 and 3. 11. The method for producing polycrystalline silicon according to claim 1, wherein said energy beam forms an image on a surface different from said non-single-crystal silicon. 12. The ratio between the diffraction intensity F ₁₁₁ of ( ₁₁₁ ) and the diffraction intensity F ₂₂₀ of (220) by X-ray diffraction is 0 ≦ F.
A polycrystalline silicon film, wherein ₂₂₀ / F ₁₁₁ ≦ 0.3. 13. An average particle size of 0.3 μm to 1.2 μm.
13. The polycrystalline silicon film according to claim 12, wherein: 14. A step of forming a gate electrode and polycrystalline silicon on a substrate via a gate insulating film, and a step of forming a source electrode and a drain electrode so as to be connected to the polycrystalline silicon. In the method for manufacturing a thin film transistor, the step of forming the polycrystalline silicon includes irradiating the non-single-crystal silicon with an energy beam by scanning the energy beam relative to the substrate by a predetermined distance every irradiation of one shot. The energy density initially received by any point of crystalline silicon is less than 160 mJ / cm ² ,
/ Cm ² or more, the energy of the maximum energy density received before the previous shot plus 15 mJ / cm ² or less, and the irradiation of the substantially maximum energy density is performed by 10 shots. More than 12
A method for manufacturing a thin film transistor, wherein the method receives 0 shots or less. 15. A step of forming a gate electrode and polycrystalline silicon on a substrate via a gate insulating film, and a step of forming a source electrode and a drain electrode so as to be connected to the polycrystalline silicon. In the method for manufacturing a thin film transistor, the step of forming the polycrystalline silicon includes irradiating the non-single-crystal silicon with an energy beam by scanning the energy beam relative to the substrate by a predetermined distance every irradiation of one shot. The energy density initially received by any point of crystalline silicon is less than 160 mJ / cm ² ,
/ Cm ² or more and less than 270 mJ / cm ^2, the energy density received in the shot is 3/2 times or less the energy density received before the previous shot, and 270 mJ / cm 2 ^Two
When the energy of the above energy density is irradiated, the energy density received in the shot is the maximum value of the energy density received before the previous shot + 15 mJ / cm ^2.
A method for manufacturing a thin film transistor, comprising: receiving irradiation of a maximum energy density of 10 shots or more and 120 shots or less with the following size. 16. A non-single-crystal silicon formed on a substrate is irradiated with an energy beam by scanning a predetermined distance relative to the substrate every irradiation of one shot, thereby polycrystallizing the non-single-crystal silicon. Forming a gate insulating film, forming a gate electrode on the gate insulating film, forming a source region and a drain region in the polycrystallized silicon, Forming an interlayer insulating film in a region including: a step of forming a contact hole in the interlayer insulating film on the source region and the drain region; and forming the source via a contact hole formed on the source region. A source electrode is formed so as to connect to the region, and a source electrode is formed so as to connect to the drain region via a contact hole formed on the drain region. Forming a formed drain electrode, wherein the step of polycrystallizing the non-single-crystal silicon has an energy density at which an arbitrary point of the non-single-crystal silicon first receives is 160 mJ / cm. Less than ² , then 160m
When the energy of the energy density of J / cm ² or more is irradiated, the irradiation of the energy of the maximum energy density received before the previous shot + 15 mJ / cm ² and the substantial maximum energy density of 10 m or less is performed. 1 shot or more
A method of manufacturing a thin film transistor, wherein the method receives 20 shots or less. 17. A non-single-crystal silicon formed on a substrate is irradiated with an energy beam by scanning a predetermined distance relative to the substrate every irradiation of one shot, thereby polycrystallizing the non-single-crystal silicon. Forming a gate insulating film, forming a gate electrode on the gate insulating film, forming a source region and a drain region in the polycrystallized silicon, Forming an interlayer insulating film in a region including: a step of forming a contact hole in the interlayer insulating film on the source region and the drain region; and forming the source via a contact hole formed on the source region. A source electrode is formed so as to connect to the region, and a source electrode is formed so as to connect to the drain region via a contact hole formed on the drain region. Forming a doped drain electrode, wherein the step of polycrystallizing the non-single-crystal silicon is such that an energy density initially received at any point of the non-single-crystal silicon is 160 mJ / cm. Less than ² , then 160m
When energy having an energy density of J / cm ² or more and less than 270 mJ / cm ² is applied, the energy density received in the shot is 3/2 times or less the energy density received before the previous shot, and 270 mJ / cm
^When energy of energy density of ² or more is irradiated, the energy density received in the shot is the maximum value of the energy density received before the previous shot + 15 mJ / cm.
² and the arbitrary point has an energy of substantially the maximum energy density of not less than 10 shots and not more than 12 shots.
A method for manufacturing a thin film transistor, wherein the method receives 0 shots or less. 18. A step of forming a gate insulating film on non-single-crystal silicon formed on a substrate, a step of forming a gate electrode on the gate insulating film, and forming the gate electrode after forming the gate electrode Using a mask as a mask, irradiating the non-single-crystal silicon with an energy beam by scanning a relatively predetermined distance for each one-shot irradiation, and polycrystallizing a part of the non-single-crystal silicon. In the method, the step of polycrystallizing the non-single-crystal silicon is such that any point of the non-single-crystal silicon initially receives an energy density of less than 160 mJ / cm ² ,
When energy having an energy density of J / cm ² or more and less than 270 mJ / cm ² is irradiated, the energy density received in the shot is 3/2 times or less the energy density received before the previous shot, and A method for manufacturing a thin film transistor, wherein an arbitrary point receives energy having a substantially maximum energy density of 10 shots or more and 120 shots or less. 19. A step of forming non-single-crystal silicon on a first substrate, and irradiating the non-single-crystal silicon with an energy beam by scanning a predetermined distance relative to the substrate each time one shot is irradiated. Forming a polycrystalline silicon; forming a scanning line and a gate electrode on the first substrate; forming a signal line, a drain electrode, and a source electrode on the first substrate; A step of forming a pixel electrode so as to be connected to a source electrode; a step of forming a common electrode on a second substrate; and a step of sealing liquid crystal in a gap between the first substrate and the second substrate. Wherein the step of polycrystallizing the non-single-crystal silicon has an energy density initially received at an arbitrary point of the non-single-crystal silicon of less than 160 mJ / cm ² , Less than 160m later
When an energy having an energy density of J / cm ² or more is irradiated, the irradiation of the energy having a maximum value of 15 mJ / cm ² or less of the maximum value of the energy density received before the previous shot and a substantial maximum energy density of 10 mJ / cm ² is performed. 1 shot or more
A method for manufacturing a liquid crystal display device, comprising receiving 20 shots or less. 20. A step of forming non-single-crystal silicon on a first substrate, and irradiating the non-single-crystal silicon with an energy beam by scanning a predetermined distance relative to the substrate every irradiation of one shot. Forming a polycrystalline silicon; forming a scanning line and a gate electrode on the first substrate; forming a signal line, a drain electrode, and a source electrode on the first substrate; A step of forming a pixel electrode so as to be connected to a source electrode; a step of forming a common electrode on a second substrate; and a step of sealing liquid crystal in a gap between the first substrate and the second substrate. Wherein the step of polycrystallizing the non-single-crystal silicon has an energy density initially received at an arbitrary point of the non-single-crystal silicon of less than 160 mJ / cm ² , Less than 160m later
When energy having an energy density of J / cm ² or more and less than 270 mJ / cm ² is irradiated, the energy density received in the shot is 3/2 times or less the energy density received before the previous shot, and 270 mJ / cm
^When energy of energy density of ² or more is irradiated, the energy density received in the shot is the maximum value of the energy density received before the previous shot + 15 mJ / cm.
² and the arbitrary point has an energy of substantially the maximum energy density of not less than 10 shots and not more than 12 shots.
A method for manufacturing a liquid crystal display device, comprising receiving 0 shots or less. 21. A laser emitting means for emitting laser light, an optical system for linearly shaping the laser light emitted from the laser emitting means, and an object to be irradiated with a linear beam shaped by the optical system. A chamber in which a processing object is installed, wherein the optical system equalizes the light intensity of the laser beam in one direction to reduce the light intensity of the linear beam to the length of the linear beam. A lens group for equalizing in the axial direction, and a lens group arranged parallel to each other with the light reflecting surfaces facing each other, and equalizing the light intensity of the laser light in a direction perpendicular to the one direction to thereby increase the light intensity of the linear beam. And a multiple reflecting means for making the linear beam uniform in the short axis direction of the linear beam. 22. The multi-reflection means according to claim 21, wherein said plurality of reflection means comprises two light reflection means arranged with said light reflection surfaces facing each other and arranged in parallel with a traveling direction of said laser light. Laser annealing equipment. 23. The laser annealing apparatus according to claim 21, wherein said multiple reflection means is movable in a traveling direction of said laser light. 24. The laser annealing apparatus according to claim 21, wherein said multiple reflection means is movable in a direction perpendicular to said light reflection surface. 25. The lens group, comprising: a cylindrical array lens; and a first cylindrical lens which is disposed on the emission side of the cylindrical array lens in the traveling direction of the laser beam and has a ridge line in the same direction as the ridge line of the cylindrical array lens. 22. The laser annealing apparatus according to claim 21, comprising: 26. A slit mask having an opening corresponding to each of the cylindrical lenses constituting the cylindrical array lens is disposed on the incident side of the cylindrical array lens in the traveling direction with respect to the cylindrical array lens. Item 24. A laser annealing apparatus according to item 21. 27. A second cylindrical lens which converges and enters a laser beam into a gap between the multiple reflection means and is arranged on an incident side of the multiple reflection means in a traveling direction of the laser light. Item 24. A laser annealing apparatus according to item 21.