JPH1065049A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

(57) [Problem] To provide a semiconductor device used in various electronic devices such as a notebook personal computer, an information communication device, a video movie, etc., having a size similar to a semiconductor element and being inexpensive. Aim. SOLUTION: A semiconductor element 1 is connected to a conductor wiring 4 on an insulating film 5, a conductor electrode 7 is formed and connected to a printed wiring board 8, and a grid-like solder ball 9 is formed on the opposite surface. With the configuration, it is possible to realize an inexpensive semiconductor device having the same size as the semiconductor element 1.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device used for various electronic devices and a method for manufacturing the same.

[0002]

2. Description of the Related Art In recent years, contradictory demands have been made for various electronic devices, in particular, notebook personal computers, mobile phones, video movies, and the like, to have high functionality and to be light, thin, and compact. ), A CSP (chip size package), and various other semiconductor devices have been proposed. A conventional semiconductor device will be described below with reference to FIGS.

FIG. 3 shows a configuration of a semiconductor device using a multilayer ceramic substrate. In FIG. 3, reference numeral 1 denotes a semiconductor element, 2 denotes a protruding electrode of the semiconductor element 1, and 3 denotes a semiconductor element. And 11 and 12 are conductor wirings and ceramics respectively patterned on a multilayer ceramic substrate, and 9 is a solder ball as an external electrode, which is arranged in a grid.

A semiconductor device using a multilayer ceramic substrate configured as described above has a high degree of freedom in wiring because the multilayer substrate is used, and it is possible to realize a semiconductor device having the same size as the semiconductor element 1. Things.

FIGS. 4 and 5 show the structure of a semiconductor device using a tape carrier. In FIG.
1 is a semiconductor element, 2 is a protruding electrode disposed only on the outer peripheral portion of the semiconductor element 1, 3 is a sealing resin for protecting the semiconductor element 1, 9 is a solder ball as an external electrode,
They are arranged in a grid. Reference numerals 4 and 5 denote conductor wiring and insulating film, each of which is patterned on the tape carrier.
Reference numeral 6 denotes a hole formed in the insulating film 5, which is filled with solder of the solder ball 9 and connected to the conductor wiring 4.

The semiconductor device shown in FIG. 5 differs from the semiconductor device shown in FIG. 4 in that bump electrodes 2 are arranged on the entire surface of semiconductor element 1 as compared with FIG. Are similar to those in FIG.

[0007]

However, in the above-described conventional configuration, the multilayer ceramic substrate shown in FIG. 3 is expensive because the multilayer ceramic substrate is expensive. Had the problem of not being able to.

Further, even when a printed wiring board is used instead of a multilayer ceramic substrate in the same structure, an expensive printed wiring board having a special structure must be used because the wiring density of a normal printed wiring board is low. There is also a problem that the semiconductor device becomes expensive.

In the configuration using the tape carrier shown in FIGS. 4 and 5, the solder ball 9 cannot be formed immediately below the protruding electrode 2, so that only the outer peripheral portion of the semiconductor element 1 shown in FIG. The size of the semiconductor device is slightly increased even when the protruding electrode 2 is provided, and when the protruding electrode 2 is provided on the entire surface of the semiconductor element 1 as shown in FIG. In some cases, the size of the semiconductor device becomes considerably large, and the terminal arrangement of the solder balls 9 of the semiconductor device is limited to the terminal arrangement of the semiconductor element 1 because a general inexpensive tape carrier is a single-sided wiring. The problem is that there is little freedom in arranging the terminals of the semiconductor device, and there is a need to reduce power supply and ground switching noise. A power supply and multi-layered ground had a problem that can not be.

An object of the present invention is to solve the above-mentioned conventional problems, and an object of the present invention is to provide an inexpensive semiconductor device having the same size as a semiconductor element and a method of manufacturing the same.

[0011]

In order to solve this problem, a semiconductor device according to the present invention has a configuration in which a tape carrier to which semiconductor elements are connected is connected to a printed wiring board via conductor electrodes.

According to the present invention, an inexpensive semiconductor device having the same size as a semiconductor element can be obtained.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention according to claim 1 of the present invention is directed to a tape carrier having a conductor wiring pattern formed on an insulating film, a semiconductor element connected to the conductor wiring, A sealing resin that protects at least the connection portion, a conductor electrode formed to be connected to the conductor wiring, and the conductor electrode electrically and mechanically connected to the tape carrier to which the semiconductor element is connected. The printed wiring board and the solder balls formed on the printed wiring board are configured to be inexpensive because the configuration is simple, and a tape carrier capable of high-density wiring is also used. By using an inexpensive printed wiring board due to its simple configuration, a semiconductor device of the same size as a semiconductor element can be realized, and the terminal arrangement of the semiconductor device can be reduced. The flexibility can be greatly improved, an arbitrary terminal arrangement can be realized, and a semiconductor device which can cope with a multilayer power supply and ground can be realized by using a multilayer printed circuit board as necessary. It has the action of:

According to a second aspect of the present invention, in the first aspect of the present invention, the semiconductor element is connected by flip chip bonding, and has the same operation as the first aspect. .

According to a third aspect of the present invention, in the first aspect of the present invention, the method of connecting the semiconductor elements is TAB (Tap).
e Automated Bonding), and has the same function as the first aspect.

According to a fourth aspect of the present invention, in the first aspect of the present invention, the semiconductor element is connected to the conductor wiring patterned on the insulating film of the tape carrier. Forming a conductor electrode connected to the conductor wiring of the tape carrier, and then connecting the tape carrier to which the semiconductor element is connected on a printed wiring board on which a wiring pattern is formed via the conductor electrode; This is a manufacturing method in which solder balls as external electrodes are formed in a grid pattern on the back side of the wiring board, and has the same function as in claim 1.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. (Embodiment 1) FIG. 1 is a sectional view showing a configuration of a semiconductor device according to a first embodiment of the present invention. A semiconductor element of this embodiment is mounted on an SBB (Stud Bum).
p Bonding), MBB (Micro Bump)
Bonding), flip chip such as C4 (Fl
ip Chip).

In FIG. 1, reference numeral 1 denotes a semiconductor element, 2 denotes a protruding electrode of the semiconductor element 1, 3 denotes a sealing resin for protecting the semiconductor element 1, and 4 and 5 denote conductive wiring patterns formed on a tape carrier, respectively. The conductor wiring 4 is flip-chip connected to the protruding electrode 2 of the semiconductor element 1. Reference numeral 6 denotes a through hole formed in the insulating film 5, and reference numeral 7 denotes a conductor electrode, which fills the through hole 6 and is connected to the conductor wiring 4. Reference numeral 8 denotes a printed wiring board, and 9 denotes solder balls formed as a grid on the pattern of the printed wiring board 8 as external electrodes of the semiconductor device.

Hereinafter, the semiconductor device of the present embodiment thus configured will be described based on its manufacturing steps.

First, the insulating film 5 made of polyimide, polyester, glass epoxy or the like has a diameter of 0.1 mm or more.
A through hole 6 of about 1.0 mm is formed by punching a die, etching, laser, drilling, or the like.

Next, after bonding a copper foil to the insulating film 5, the conductor wiring 4 is formed by exposure and etching.
The method is the same as a general tape carrier manufacturing method, and a detailed description thereof will be omitted.

Next, the semiconductor element 1 is electrically and mechanically connected to one end of the conductor wiring 4 of a tape carrier of the same size as the semiconductor element 1, and the connection between the semiconductor element 1 and the conductor wiring 4 is sealed. Seal with resin 3.

At this time, the case where solder is used as the conductor electrode 7 will be described.
When solder is mounted and reflowed, the solder melts, a part of which is filled in the through hole 6 and connected to the conductor wiring 4 of the tape carrier. At this stage, the solder forming the conductor electrode 7 is They are not necessarily arranged in a lattice.

The tape carrier to which the semiconductor element 1 is connected is mounted on a printed wiring board 8 of the same size as the semiconductor element 1, and the printed wiring board 8 is reflowed.
After connection, the solder balls 9 are formed in a grid pattern on the opposite surface of the printed wiring board 8, whereby a semiconductor device having a size similar to that of the semiconductor element 1 and being inexpensive can be obtained.

Further, since wiring can be performed on the printed wiring board 8, the terminal arrangement of the semiconductor device can be arbitrarily set, and the solder balls 9 can be arranged in a grid pattern on the entire surface of the printed wiring board 8.
Is formed, the pitch of the solder balls 9 can be increased, and the mounting can be facilitated.
It is possible to obtain a semiconductor device capable of coping with a multilayer power supply and ground.

In this embodiment, the case where solder is used as the conductor electrode 7 for connecting the tape carrier and the printed wiring board 8 has been described. However, a conductive resin filled with a conductive filler or an anisotropic conductive sheet is used. May be used.

(Embodiment 2) FIG. 2 is a cross-sectional view showing a configuration of a semiconductor device according to a second embodiment of the present invention.
pe Automated Bonding).

In FIG. 2, 1 is a semiconductor element, 2 is a protruding electrode of the semiconductor element 1, 3 is a sealing resin for protecting the semiconductor element 1, and 4 and 5 are conductor wiring patterns formed on a tape carrier, respectively. The conductor wiring 4 is TAB-connected to the protruding electrode 2 of the semiconductor element 1. Reference numeral 7 denotes a conductor electrode, reference numeral 8 denotes a printed wiring board, and reference numeral 9 denotes a solder ball formed as a grid on the pattern of the printed wiring board 8 as an external electrode of the semiconductor device.

Hereinafter, the semiconductor device of the present embodiment thus configured will be described based on its manufacturing steps.

First, a copper foil is adhered to an insulating film 5 made of polyimide, polyester, glass epoxy or the like.
The conductor wiring 4 is formed by exposure and etching, but the method is the same as a general method of manufacturing a tape carrier, and a detailed description thereof will be omitted.

Next, the semiconductor element 1 is electrically and mechanically TAB-connected to one end of the conductor wiring 4 of the tape carrier, and the connection between the semiconductor element 1 and the conductor wiring 4 is sealed with a sealing resin 3.

Subsequently, solder balls were formed as conductor electrodes 7 on the outer periphery of the tape carrier. The tape carrier to which the semiconductor element 1 was connected was mounted on a printed wiring board 8 and connected to the printed wiring board 8 by reflow. rear,
By forming the solder balls 9 in a grid on the opposite surface of the printed wiring board 8, a semiconductor device having a size similar to that of the semiconductor element 1 and being inexpensive can be obtained. Further, since wiring can be performed on the printed wiring board 8, the terminal arrangement of the semiconductor device can be arbitrarily set, and the printed wiring board 8 can be arranged.
By forming the solder balls 9 in a grid pattern over the entire surface, the pitch of the solder balls 9 can be increased, mounting can be facilitated, and a semiconductor device capable of coping with a multilayer power supply and ground can be provided. Obtainable.

In this embodiment, the case where solder is used as a method for connecting the tape carrier and the printed wiring board 8 has been described. However, a conductive resin filled with a conductive filler or an anisotropic conductive sheet is used. Or an OLB (Outer Lead B)
may be performed.

[0034]

As described above, the semiconductor device according to the present invention has an effect that an inexpensive semiconductor device having a size similar to that of a semiconductor element can be easily realized.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a configuration of a semiconductor device according to a first embodiment of the present invention;

FIG. 2 is a cross-sectional view illustrating a configuration of a semiconductor device according to a second embodiment of the present invention;

FIG. 3 is a cross-sectional view illustrating a configuration of a conventional semiconductor device.

FIG. 4 is a cross-sectional view illustrating a configuration of a conventional semiconductor device.

FIG. 5 is a cross-sectional view illustrating a configuration of a conventional semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Protruding electrode 3 Sealing resin 4 Conductor wiring 5 Insulating film 6 Through hole 7 Conductor electrode 8 Printed wiring board 9 Solder ball

Claims (4)

[Claims] 1. A tape carrier having a conductor wiring pattern formed on an insulating film; a semiconductor element connected to the conductor wiring; a sealing resin for protecting at least a connection portion of the semiconductor element; A printed circuit board electrically and mechanically connected to a tape carrier to which the semiconductor element is connected by the conductive electrode, and a solder formed on the printed circuit board. Semiconductor device consisting of balls. 2. The semiconductor device according to claim 1, wherein the semiconductor elements are connected by flip-chip bonding. 3. The method of connecting a semiconductor element is TAB (Tap).
2. The semiconductor device according to claim 1, wherein the semiconductor device is connected by e-automated bonding. 4. A semiconductor element is connected to a conductor wiring patterned on an insulating film of a tape carrier, and a conductor electrode connected to the conductor wiring of the tape carrier is formed. After connecting the tape carrier to which the semiconductor element is connected on the printed wiring board on which the wiring pattern is formed, solder balls as external electrodes are formed in a grid pattern on the back side of the printed wiring board. Item 4. The method for manufacturing a semiconductor device according to any one of Items 1 to 3.