JPH10321686A - Burn-in device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a burn-in device that can stably measure electrical characteristics regardless of ambient temperature. SOLUTION: A container 2 that is constituted so that it can be divided into a cover part 21 where a probe card 40 is fixed integrally and a base part where a wafer placement stand 3 is fixed is used, and a wafer W and a flexible probe card 40 are closed into the container 2 while they oppose each other. The upper space of the probe card 40 is a damper room, and a fluid is injected into it and, for example, a collective contact type bump 41 of the probe card 40 is pressed to the side of the wafer W due to the pressure. A bump 42 at the periphery edge part of the probe card 40 and an electrode 5 of the peripheral edge of the container 2 are connected before being connected to a test head side.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probe device.

[0002]

2. Description of the Related Art In a semiconductor device manufacturing process,
After the wafer process is completed and an IC chip is completed in the wafer, an electrical measurement called a probe test is performed to examine a short circuit and an open of an electrode pattern and an input / output characteristic of the IC chip. The quality of the IC chip is determined in the state of “wafer”). After that, the wafer is divided into IC chips, and a good IC
After the chip is packaged, for example, a predetermined probe test is performed to determine the quality of the final product.

[0003] In this probe device, as shown in FIG. 7, an electrode pad arrangement of IC chips in a wafer W is provided above a wafer mounting table 1 movable in, for example, X, Y, Z, and θ directions. After the probe card 12 having the probe needles 11 arranged in a row is arranged, the wafer mounting table 1 is moved to align the electrode pads of the IC chips in the wafer W with the probe needles 11, and then the probe needles 11 and the electrodes are moved. The electrode pad is brought into contact with the test head 15 via the probe needle 11 and the contact ring 14 including the pogo pin 13 and the like, and the electrode pad is electrically measured using, for example, a high frequency corresponding to the operating speed of the IC. To determine the quality of the IC chip.

In order to perform accurate electrical measurement, the probe needle must be securely brought into contact with the electrode pad.
It is necessary to accurately align the electrode pads of the chip. Therefore, for example, an optical unit 16 for detecting a wafer pattern is installed at a position away from the test head 15,
By moving the X and Y axes, the wafer is positioned below it, and the position of the wafer mounting table 1 is adjusted while looking through the electrode pads via the optical unit 16 so that, for example, X, Y, θ Direction alignment.

A burn-in test for detecting a defective IC chip under severe conditions in advance is usually performed after packaging the chip. Recently, however, it has been studied to perform the test in a wafer state. A temperature controller is built in the wafer mounting table, so that the temperature of the wafer is adjusted, for example, in a range of about −40 to + 150 ° C., and measurement is performed.

[0006]

In semiconductor devices, the chip size, the circuit integration, and the processing speed are increasing, and the size of the wafer on which a large number of chips are formed is large. Therefore, various inconveniences are occurring in the probe device. For example, by increasing the diameter of the wafer,
A wide moving space is required for the wafer mounting table including the wafer alignment area,
The measurement at low temperature depends on the ambient temperature,
Further, particles are easily generated by the movement of the wafer mounting table. The operation speed of the LS1 for a supercomputer is very high, for example, several tens to several hundreds of MHz. However, when the operation speed is increased in this way, the frequency of signal pulses at the time of measurement increases, so that external electrical Be more susceptible to noise. Pogo pin 13 of contact ring 14
And the like use a coaxial cable to suppress the influence of electric noise, but the both ends of the pogo pin 13 and the probe needle 11 cannot adopt an electric shielding structure. Therefore, there is a problem that the electrical measurement of the chip becomes unstable from the above.

[0007] Furthermore, as chips become finer and circuits become more highly integrated, the number of electrode pads increases, the size of the pads becomes smaller, and the distance between the pads becomes narrower. There are also problems.

The present invention has been made under such circumstances, and its object is to avoid the influence of external electric noise, and furthermore, irrespective of the ambient temperature,
An object of the present invention is to provide a probe device capable of performing stable electrical measurement.

[0009]

According to a first aspect of the present invention, a contact of a probe card is brought into contact with an electrode pad of an object to be inspected placed on an object to be inspected, and a tester is contacted through the contact. In the probe device for performing electrical measurement of the object to be inspected, while the object to be inspected mounting table and the probe card are sealed in a container having an electromagnetic shielding function, the outside of this container and the object to be inspected mounting table The container is provided with a transfer port that can be opened and closed so as to transfer the object to be inspected between the containers.

[0010] A second aspect of the present invention is characterized in that, in the first aspect of the present invention, a temperature adjusting means for adjusting the temperature of the test object is provided.

According to a third aspect of the present invention, in the first or the second aspect of the present invention, the contact is provided to all the electrode pads of the chip to be inspected so as to collectively contact each of the electrode pads. It is characterized by being constituted by bumps arranged correspondingly.

According to a fourth aspect of the present invention, in the first, second or third aspect of the present invention, the substrate of the probe card is made of a flexible material, and the probe card is provided on a side opposite to the contact in the probe card. A space that forms a damper chamber is formed between the surface and the inner surface of the container, a fluid is injected into the damper chamber, and the pressure of the fluid presses the probe card toward the device under test.

The invention according to claim 5 is based on claim 1, claim 2,
According to the third or fourth aspect of the present invention, the container is configured such that a cover portion to which the probe card is integrally fixed and a base portion to which the test object mounting table is integrally fixed can be divided. An optical system unit for transmitting an image of an electrode pad of a test object and an image of a contact is provided so as to be able to advance and retreat between the test object mounting table and the contact when the container is divided.

[0014]

The object to be inspected is carried into the object mounting table from the opening of the transfer port of the container, and the temperature of the object to be inspected is adjusted to a predetermined temperature by, for example, temperature adjusting means built in the object mounting table. In this state, the contact is brought into contact with the electrode pad of the device under test to perform electrical measurement. At this time, since the object to be inspected and the probe card are sealed by the container, the temperature is stabilized with little influence of the surrounding temperature, and is shielded from external electric noise, so that the electric measurement is stabilized.

If bumps are provided on the probe card side so as to collectively contact the electrode pads of the device under test, the amount of movement of the device under test in the X, Y, and θ directions is the amount required for alignment. The container can be made smaller. In this case, if the probe card is formed of a flexible substrate and a fluid is injected into the space on the opposite side of the bump and the probe card is pressed against the device under test, the pressing force can be adjusted by the pressure of the fluid. is there.

Furthermore, the container can be divided into a cover portion and a base portion, and an optical system unit is inserted between the cover portion and the base portion to capture images of the contact and the electrode pad of the device under test. Can be realized.

[0017]

1 and 2 are a longitudinal sectional side view and an external perspective view, respectively, showing an embodiment of the present invention. In the figure, reference numeral 2 denotes a flat cylindrical container made of, for example, aluminum. This container 2 is configured so as to be divided into an upper cover portion 21 and a lower base portion 22 and, for example, the base portion 22 is grounded. Thus, an electromagnetic shielding function is provided. In order to provide the container 2 with an electromagnetic shielding function, the container 2 may be grounded on the test head side via a cable 52 described later. A wafer mounting table 3 is disposed in the internal space of the container 2, and the wafer mounting table 3 is driven by, for example, X, Y, θ (vertical axis) by a driving mechanism 31 provided outside the lower part of the container 2. A small amount is driven in the (circumferential) direction. Further, in the wafer mounting table 3, for example, a temperature at which the wafer W can be adjusted to a temperature range of about -40 to 150 ° C. by combining a heating means such as a resistance heating element or a Peltier element with a cooling means such as a coolant channel. The adjusting means 32 is built in, and elevating pins 34 for lifting the wafer W from the mounting surface when the wafer W is transferred to the transfer arm 33 shown in FIG.

A flexible multi-layer wiring board 4 made of, for example, a polyimide is formed on the entire lower surface of the cover portion 21, that is, over the thick peripheral wall portion and the opening surface of the cover portion 21, in the space S1 in the cover portion 21. Is affixed so as to hermetically seal. On the lower surface side of the multilayer wiring board 4, contacts, for example, bumps 41 which are conductive protrusions, are arranged corresponding to all the electrode pads of the wafer W so as to collectively contact the electrode pads of all the chips. Have been. The multilayer wiring board 4 has a structure in which a large number of wiring layers serving as conductive paths are stacked, and a ground layer of a ground potential is interposed between upper and lower surfaces of the multilayer wiring layer and between the wiring layers. The material of the bump 41 is, for example, 18 gold, platinum,
Rhodium, tungsten, a nickel alloy, or the like can be used.

The peripheral portion of the multilayer wiring board 4 (cover portion 2)
The signal input / output bumps 42 are arranged on the lower surface of the portion corresponding to the thick peripheral wall portion 1) in correspondence with the bumps, respectively. Are electrically connected to each other by an internal wiring layer. The multilayer wiring board 4 and the bumps 41 and 42 constitute the probe card 40 in this embodiment.

On the thick peripheral wall portion of the base portion 22 corresponding to the bumps 42 for signal input / output, electrode portions 5 made of conductive paths corresponding to the bumps 42 are provided.
Are provided to penetrate in the vertical direction, and the base portion 22
A concave portion 51 is formed in a region where the electrode portion 5 is disposed on the upper surface of the substrate so that the bump 42 can be accommodated. A connector 5 provided at one end of the cable 52 is provided at the lower end of the electrode section 5.
3 is connected, and the other end of the cable 52 is connected to the test head 54. Therefore, the bump 41 which is a contact of the probe card 40 is connected to the multilayer wiring board 4 → the bump 4
The connection is made to the test head 54 through the route of 2 → electrode unit 5 → connector 53 → cable 52.

The cover portion 21 is connected to a fluid supply passage 6 and a fluid discharge passage 61 which are opened to the internal space 51 through the peripheral wall portion thereof and provided with valves V1 and V2, respectively. However, these conduits are formed by passages 6 a formed in the peripheral wall portion of the case portion 21 as representatively shown on the fluid supply passage 6 side.
And a connection port 6b and a pipe 6c. On the supply end side of the fluid supply path 6, a fluid pressure supply source 60 such as a fluid such as a gas or a liquid, and a temperature adjustment unit (not shown) for adjusting the fluid to a predetermined temperature are provided. A pressure gauge 62 is attached to the fluid supply passage 6, and controls the fluid pressure source 60 based on the pressure signal to adjust the pressure of the fluid in the internal space S1. That is, the internal space S1 forms a damper chamber, and has a role of pressing the flexible multilayer wiring board 4 with the fluid to reliably contact the bump 41 with the wafer W.

The base section 22 is provided with a gas supply pipe 23 and an exhaust pipe 24 which penetrate through the wall and open to the space below the probe card 40 and have valves V3 and V4, respectively. Through these, a gas such as air for temperature adjustment or an inert gas flows through this space. Then, the container 2 is moved up and down, that is,
A dividing mechanism is provided to divide the cover unit 21 into a base unit 22 and an elevating unit 71 that moves the cover unit 21 up and down as shown in FIG. A turning section 72 for turning is provided. The rotating portion 72 can be used, for example, for performing circumferential alignment of a new probe card 40 when the probe card 40 is replaced. In this example, the division opening when the container 2 is divided forms a transfer port for the wafer W.

Next, the operation of the above embodiment will be described. First, the cover unit 21 is lifted and separated from the base unit 22 by the lifting mechanism 71 shown in FIG. 2, and the wafer W is transferred from the transfer arm 33 to the wafer mounting table 3 via the lifting pins 34. Next, the cover 21 is lowered, and the peripheral portions of the cover 21 and the base 22 are overlapped via the substrate 4 as shown in FIG.

For example, the wafer mounting table 3 is heated by the temperature mounting means 32 in advance by the wafer mounting table 32, whereby the temperature of the wafer W is increased to, for example, 120 ° C. The adjusted fluid, for example, gas is injected into the internal space (damper chamber) S1 to press the probe card 40. As a result, the bumps 41 arranged on the probe card 40 come in contact with the electrode pads of all the chips on the wafer W at a time while being pressed. Further, in this example, the gas adjusted to a predetermined temperature flows through the gas supply pipe 23 and the exhaust pipe 24 also in the space where the wafer mounting table 3 is disposed, and thus the temperature of the wafer W is further stabilized. I have.

Here, positioning is performed before the bumps 41 and the electrode pads on the wafer W are brought into contact with each other. This positioning is performed when the cover 2 is opened when the container 2 is opened as described later in detail. An optical system unit that can simultaneously capture images on the probe card 40 side and the wafer W side may be used between the base unit 22 and the cover unit 2.
A camera may be attached to the upper wall of the device 1 and a part of the substrate 4 may be formed of a transparent material so that the images of the bumps 41 and the electrode pads may be simultaneously captured. After the amount of displacement between the probe card 40 and the wafer W is grasped, the wafer mounting table 3 is moved in the X, Y, and θ directions by the drive mechanism 31 to perform the positioning.

On the other hand, when the cover portion 21 and the base portion 22 are overlapped, the bumps 42 on the peripheral edge of the probe card 40 come into contact with the electrode portions 5, so that the electrode pads of the chips of the wafer W pass through the bumps 41 as described above. The test head 54 is electrically connected to the test head 54. In this state, the test head 54 applies a predetermined pulse signal to the chip on the wafer W, and fetches an output pulse signal from the chip side to determine the quality of the chip. Thereafter, for example, the gas in the damper chamber S1 is discharged through the fluid discharge path 61, the supply of the gas from the gas supply pipe 23 is stopped, and the cover 21 is raised to move the wafer W
Is transferred to the transfer arm 33.

According to the above embodiment, since the inside of the container 2 seals the probe card 40 and the wafer mounting table 3, even if the wafer W is adjusted to a high or low temperature, the wafer W
Temperature is hardly affected by the ambient temperature, and the small volume makes the temperature rise and fall fast. Since the container 2 has an electromagnetic shielding function, the container 2 is also shielded from external electric noise, so that stable measurement can be performed.

Furthermore, since the bumps 41 make contact with the electrode pads of all the chips of the wafer W at once, the wafer mounting table may be configured so as not to move by an amount necessary for alignment, for example. The entire apparatus can be reduced in size, and there is no need to perform stepping movement for sequentially bringing the contacts into contact with the chip, thereby improving the throughput.
Further, since a fluid, for example, a gas is injected into the damper chamber S1 and the bump 41 is pressed against the wafer W via the substrate 4 by the pressure, the pressing force can be easily adjusted, and the temperature of the fluid can be adjusted. Therefore, it is more difficult to be affected by the ambient temperature.

In the above description, the container 2 is not limited to aluminum and may be configured to be grounded using another metal, as long as it has an electromagnetic shielding function. Alternatively, a metal box may be attached to an insulator. Further, in order to load the wafer W into the container 2, the container 2 may not be divided into upper and lower portions, but may be formed with, for example, a wafer loading port opened and closed by a gate on a side wall.

In order to press the probe card 40, instead of injecting a fluid into the damper chamber S1, mechanical means such as a ball screw or a spring may be used.
The temperature adjustment unit of the wafer W may have a structure in which a heater or the like is incorporated in the container 2.

The present invention may be applied to a device in which a probe needle is used as a contact, or an apparatus in which a bump or a probe needle is sequentially contacted with a bump. The present invention can also be applied to a probe device that does not perform the measurement.

Next, another embodiment of the present invention will be described with reference to FIGS. 3 and 4. In this embodiment, an unillustrated, for example, An alignment unit 8 is provided which is movable forward and backward by a forward and backward mechanism capable of driving in X, Y and Z directions. The positioning unit 8 includes a holding frame 81 formed in a shape corresponding to the cover 21 and the base 22 so as to be able to be in close contact with the cover 21 and the base 22.
X guide rails 82, 82 arranged so as to extend in the X direction at both left and right edges of the X guide rails 82, 82
Guide rails 83, 8 which are guided by and extend in the Y direction
3 and a camera unit 9 which is an optical system unit guided along the Y guide rails 83 and 83 and attached to a joint arm 84. The camera unit 9 is X and Y by the joint arm 84. Move in the direction.

The camera unit 9 includes an objective lens 91 and an electrode pad P with respect to the bump 41, as shown in FIG.
, A camera 93 that forms an image of the bump and electrode pad P, a half mirror 94 that reflects the image from the upper objective lens 91 to the camera 93 side, and a half mirror 94 that reflects the image from the lower objective lens 92 to the half. Half mirror 95 and prism 9 that form an optical path to the back side of mirror 94
6 and shutters 97 and 9 for independently opening and closing the optical paths from the upper objective lens 91 and the lower objective lens 92, respectively.
8. In FIG. 3, the details of the drive mechanism 31 and the fluid supply path 6 of the wafer mounting table 3 shown in FIG. 1 are omitted.

In this embodiment, after the wafer W is mounted on the wafer mounting table 3, the positioning unit 8 is interposed between the cover 21 and the base 22, and these are overlapped to seal the internal space. Then, the positioning of the probe card 40 and the wafer W is performed using the camera unit 9.

For this alignment, for example, images of the bump 41 and the pad P are sequentially captured at a low magnification and a high magnification as shown in FIGS. 6 (a) and 6 (b), and based on these images, an operator mounts, for example, a wafer. The mounting table 3 may be driven, or a plurality of cross marks may be attached to the probe card 40 and the wafer W, for example, at a plurality of positions, and these may be used.

According to this configuration, since the probe card surface and the wafer surface can be simultaneously monitored and the position can be adjusted in real time, high-accuracy position adjustment can be realized without being affected by errors in the mechanical control system. In addition, since the positioning can be performed in a state where the probe card and the wafer W are sealed, high-precision positioning can be performed even in a high temperature or low temperature state.

[0037]

According to the first aspect of the present invention, the test object mounting table and the probe card are sealed in a container having an electromagnetic shielding function, so that the test object mounting table and the probe card are hardly affected by external electric noise and stable. Electrical measurements can be made. When adjusting the temperature of the object to be inspected as in the second aspect of the invention, the influence of the ambient temperature is small.

Further, if the contacts are collectively brought into contact with all the electrode pads of the device under test as in the third aspect of the present invention, the amount of movement of the device mounting table can be reduced, so that the container can be made smaller. it can. According to the fourth aspect of the present invention, the pressure can be easily adjusted by forming a damper chamber in the container and supplying a fluid therein to press the probe card.

According to the fifth aspect of the present invention, the positioning unit is provided so as to be interposed between the probe card and the device to be inspected, so that the images of the contacts and the electrode pads can be taken in simultaneously. Therefore, highly accurate positioning can be performed.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view showing an embodiment of the present invention.

FIG. 2 is a perspective view showing an overview of an embodiment of the present invention.

FIG. 3 is a longitudinal sectional view showing another embodiment of the present invention.

FIG. 4 is a plan view showing another embodiment of the present invention.

FIG. 5 is a side view showing the camera unit.

FIG. 6 is an explanatory diagram showing an image in a camera unit.

FIG. 7 is a longitudinal sectional view showing a conventional probe device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 2 Container 21 Cover part 22 Base part 3 Wafer mounting table 32 Temperature adjustment part 40 Probe card 41, 42 Bump 5 Electrode 6 Fluid supply path 61 Fluid discharge path S1 Damper chamber (internal space) 8 Positioning unit

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[Procedure amendment]

[Submission date] May 7, 1998

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Full text

[Correction method] Change

[Correction contents]

[Document Name] Statement

[Title of the Invention] Burn-in device

[Claims]

DETAILED DESCRIPTION OF THE INVENTION

[0001]

FIELD OF THE INVENTION The present invention relates to a burn to the object to be inspected
The present invention relates to a burn-in device for performing an in-test .

[0002]

2. Description of the Related Art In a semiconductor device manufacturing process,
After the wafer process is completed and an IC chip is completed in the wafer, an electrical measurement called a probe test is performed to examine a short circuit and an open of an electrode pattern and an input / output characteristic of the IC chip. The quality of the IC chip is determined in the state of “wafer”). After that, the wafer is divided into IC chips, and a good IC
After the chip is packaged, for example, a predetermined probe test is performed to determine the quality of the final product.

[0003] In this probe device, as shown in FIG. 7, an electrode pad arrangement of IC chips in a wafer W is provided above a wafer mounting table 1 movable in, for example, X, Y, Z, and θ directions. After the probe card 12 having the probe needles 11 arranged in a row is arranged, the wafer mounting table 1 is moved to align the electrode pads of the IC chips in the wafer W with the probe needles 11, and then the probe needles 11 and the electrodes are moved. The electrode pad is brought into contact with the test head 15 via the probe needle 11 and the contact ring 14 including the pogo pin 13 and the like, and the electrode pad is electrically measured using, for example, a high frequency corresponding to the operating speed of the IC. To determine the quality of the IC chip.

In order to perform accurate electrical measurement, the probe needle must be securely brought into contact with the electrode pad.
It is necessary to accurately align the electrode pads of the chip. Therefore, for example, an optical unit 16 for detecting a wafer pattern is installed at a position away from the test head 15,
By moving the X and Y axes, the wafer is positioned below it, and the position of the wafer mounting table 1 is adjusted while looking through the electrode pads via the optical unit 16 so that, for example, X, Y, θ Direction alignment.

A burn-in test for detecting a defective IC chip under severe conditions in advance is usually performed after packaging the chip. Recently, however, it has been studied to perform the test in a wafer state. A temperature controller is built in the wafer mounting table, so that the temperature of the wafer is adjusted, for example, in a range of about −40 to + 150 ° C., and measurement is performed.

[0006]

In semiconductor devices, the chip size, the circuit integration, and the processing speed are increasing, and the size of the wafer on which a large number of chips are formed is large. Therefore, various inconveniences are occurring in the probe device. For example, by increasing the diameter of the wafer,
A wide moving space is required for the wafer mounting table including the wafer alignment area,
The measurement at low temperature depends on the ambient temperature,
In addition, particles are generated due to the movement of the wafer mounting table.
I'm sorry.

[0007] Furthermore, as chips become finer and circuits become more highly integrated, the number of electrode pads increases, the size of the pads becomes smaller, and the distance between the pads becomes narrower. There are also problems.

The present invention has been made under such circumstances, and its object is not affected by the ambient temperature.
An object of the present invention is to provide a burn-in device capable of performing stable electric measurement.

[0009]

According to the first aspect of the present invention, a test object
A burn-in device that performs temperature adjustment and inspection for the specimen
A container forming an accommodation space for accommodating the object to be inspected.
And a mounting portion provided in the container and for mounting an object to be inspected.
And a plurality of electrode pads of the device under test mounted on the mounting portion.
Multiple contacts arranged to contact each other collectively
A probe card having a probe and an outside of the accommodation space of the container.
In the above, the probe card is provided in one place.
Electrically connect the contact to an external connector
To the test object mounted on the mounting section described above.
To press the probe card with the pressure of the fluid.
Means.

[0010]

The test object is carried into the test object mounting table from the opening of the container, and the contact is brought into contact with the electrode pad of the test object while the temperature of the test object is adjusted to a predetermined temperature. And make electrical measurements. At this time, since the object to be inspected and the probe card are hermetically sealed by the container, the temperature is less affected by the ambient temperature and is stable.

If bumps are provided on the probe card side so as to collectively contact the electrode pads of the device under test, the amount of movement of the device mounting table in the X, Y, and θ directions is the amount required for alignment. The container can be made smaller. Ma
Between the probe card and the device under test due to the pressure of the fluid
Pressure adjustment is easy because the force can be adjusted.

[0012]

1 and 2 are a longitudinal sectional side view and an external perspective view, respectively, showing an embodiment of the present invention. In the figure, reference numeral 2 denotes a flat cylindrical container made of, for example, aluminum. This container 2 is configured so as to be divided into an upper cover portion 21 and a lower base portion 22 and, for example, the base portion 22 is grounded. Thus, an electromagnetic shielding function is provided. In order to provide the container 2 with an electromagnetic shielding function, the container 2 may be grounded on the test head side via a cable 52 described later. A wafer mounting table 3 is disposed in the internal space of the container 2, and the wafer mounting table 3 is driven by, for example, X, Y, θ (vertical axis) by a driving mechanism 31 provided outside the lower part of the container 2. A small amount is driven in the (circumferential) direction. Further, in the wafer mounting table 3, for example, a temperature at which the wafer W can be adjusted to a temperature range of about -40 to 150 ° C. by combining a heating means such as a resistance heating element or a Peltier element with a cooling means such as a coolant channel. The adjusting means 32 is built in, and elevating pins 34 for lifting the wafer W from the mounting surface when the wafer W is transferred to the transfer arm 33 shown in FIG.

A flexible multi-layer wiring board 4 made of, for example, a polyimide is provided on the entire lower surface of the cover portion 21, that is, over the thick peripheral wall portion and the opening surface of the cover portion 21, and a space S1 in the cover portion 21. Is affixed so as to hermetically seal. On the lower surface side of the multilayer wiring board 4, contacts, for example, bumps 41 which are conductive protrusions, are arranged corresponding to all the electrode pads of the wafer W so as to collectively contact the electrode pads of all the chips. Have been. The multilayer wiring board 4 has a structure in which a large number of wiring layers serving as conductive paths are stacked, and a ground layer of a ground potential is interposed between upper and lower surfaces of the multilayer wiring layer and between the wiring layers. The material of the bump 41 is, for example, 18 gold, platinum,
Rhodium, tungsten, a nickel alloy, or the like can be used.

The peripheral portion of the multilayer wiring board 4 (cover portion 2)
The signal input / output bumps 42 are arranged on the lower surface of the portion corresponding to the thick peripheral wall portion of the multi-layer wiring board 4 in correspondence with the bumps, respectively. Are electrically connected to each other by an internal wiring layer. The multilayer wiring board 4 and the bumps 41 and 42 constitute the probe card 40 in this embodiment.

In the thick peripheral wall portion of the base portion 22, a portion corresponding to the bump 42 for signal input / output is provided with an electrode portion 5 comprising a conductive path corresponding to the bump 42, respectively.
Are provided to penetrate in the vertical direction, and the base portion 22
A concave portion 51 is formed in a region where the electrode portion 5 is disposed on the upper surface of the substrate so that the bump 42 can be accommodated. A connector 5 provided at one end of the cable 52 is provided at the lower end of the electrode section 5.
3 is connected, and the other end of the cable 52 is connected to the test head 54. Therefore, the bump 41 which is a contact of the probe card 40 is connected to the multilayer wiring board 4 → the bump 4
The connection is made to the test head 54 through the route of 2 → electrode unit 5 → connector 53 → cable 52.

The cover part 21 is connected to a fluid supply path 6 and a fluid discharge path 61 which are opened to an internal space 51 through a peripheral wall part thereof and provided with valves V1 and V2, respectively. However, these conduits are formed by passages 6 a formed in the peripheral wall portion of the case portion 21 as representatively shown on the fluid supply passage 6 side.
And a connection port 6b and a pipe 6c. On the supply end side of the fluid supply path 6, a fluid pressure supply source 60 such as a fluid such as a gas or a liquid, and a temperature adjustment unit (not shown) for adjusting the fluid to a predetermined temperature are provided. A pressure gauge 62 is attached to the fluid supply passage 6, and controls the fluid pressure source 60 based on the pressure signal to adjust the pressure of the fluid in the internal space S1. That is, the internal space S1 forms a damper chamber, and has a role of pressing the flexible multilayer wiring board 4 with the fluid to reliably contact the bump 41 with the wafer W.

The base section 22 is provided with a gas supply pipe 23 and an exhaust pipe 24 which penetrate through the wall and open to a space below the probe card 40 and are provided with valves V3 and V4, respectively. Through these, a gas such as air for temperature adjustment or an inert gas flows through this space. Then, the container 2 is moved up and down, that is,
A dividing mechanism is provided to divide the cover unit 21 into a base unit 22 and an elevating unit 71 that moves the cover unit 21 up and down as shown in FIG. A turning section 72 for turning is provided. The rotating portion 72 can be used, for example, for performing circumferential alignment of a new probe card 40 when the probe card 40 is replaced. In this example, the division opening when the container 2 is divided forms a transfer port for the wafer W.

Next, the operation of the above embodiment will be described. First, the cover unit 21 is lifted and separated from the base unit 22 by the lifting mechanism 71 shown in FIG. 2, and the wafer W is transferred from the transfer arm 33 to the wafer mounting table 3 via the lifting pins 34. Next, the cover 21 is lowered, and the peripheral portions of the cover 21 and the base 22 are overlapped via the substrate 4 as shown in FIG.

For example, the wafer mounting table 3 is heated by the temperature mounting means 32 in advance by the wafer mounting table 32, whereby the temperature of the wafer W is increased to, for example, 120 ° C., and the predetermined temperature and predetermined pressure are The adjusted fluid, for example, gas is injected into the internal space (damper chamber) S1 to press the probe card 40. As a result, the bumps 41 arranged on the probe card 40 come in contact with the electrode pads of all the chips on the wafer W at a time while being pressed. Further, in this example, the gas adjusted to a predetermined temperature flows through the gas supply pipe 23 and the exhaust pipe 24 also in the space where the wafer mounting table 3 is disposed, and thus the temperature of the wafer W is further stabilized. I have.

Here, positioning is performed before the bumps 41 and the electrode pads on the wafer W are brought into contact with each other. This positioning is performed when the cover 2 is opened when the container 2 is opened, as will be described in detail later. An optical system unit that can simultaneously capture images on the probe card 40 side and the wafer W side may be used between the base unit 22 and the cover unit 2.
A camera may be attached to the upper wall of the device 1 and a part of the substrate 4 may be formed of a transparent material so that the images of the bumps 41 and the electrode pads may be simultaneously captured. After the amount of displacement between the probe card 40 and the wafer W is grasped, the wafer mounting table 3 is moved in the X, Y, and θ directions by the drive mechanism 31 to perform the positioning.

On the other hand, when the cover portion 21 and the base portion 22 are overlapped, the bumps 42 on the peripheral edge of the probe card 40 and the electrode portions 5 come into contact with each other. The test head 54 is electrically connected to the test head 54. In this state, the test head 54 applies a predetermined pulse signal to the chip on the wafer W, and fetches an output pulse signal from the chip side to determine the quality of the chip. Thereafter, for example, the gas in the damper chamber S1 is discharged through the fluid discharge path 61, the supply of the gas from the gas supply pipe 23 is stopped, and the cover 21 is raised to move the wafer W
Is transferred to the transfer arm 33.

According to the above embodiment, since the inside of the container 2 seals the probe card 40 and the wafer mounting table 3, even if the wafer W is adjusted to a high or low temperature state, the wafer W
Temperature is hardly affected by the ambient temperature, and the small volume makes the temperature rise and fall fast. Since the container 2 has an electromagnetic shielding function, the container 2 is also shielded from external electric noise, so that stable measurement can be performed.

Further, since the bumps 41 make contact with the electrode pads of all the chips of the wafer W at once, the wafer mounting table may be configured so as not to be moved by an amount necessary for the alignment, for example. The entire apparatus can be reduced in size, and there is no need to perform stepping movement for sequentially bringing the contacts into contact with the chip, thereby improving the throughput.
Further, since a fluid, for example, a gas is injected into the damper chamber S1 and the bump 41 is pressed against the wafer W via the substrate 4 by the pressure, the pressing force can be easily adjusted, and the temperature of the fluid can be adjusted. Therefore, it is more difficult to be affected by the ambient temperature.

In order to load the wafer W into the container 2 as described above, the container 2 may not be divided into upper and lower portions, but may be provided with, for example, a wafer transfer port opened and closed by a gate on a side wall.

The present invention may be applied to an apparatus that uses a probe needle as a contact or that sequentially contacts a bump or a probe needle with a bump .

Next, another embodiment of the present invention will be described with reference to FIGS. 3 and 4. In this embodiment, for example, an unillustrated portion is provided between a cover portion 21 and a base portion 22 which are vertically divided. An alignment unit 8 is provided which is movable forward and backward by a forward and backward mechanism capable of driving in X, Y and Z directions. The positioning unit 8 includes a holding frame 81 formed in a shape corresponding to the cover 21 and the base 22 so as to be able to be in close contact with the cover 21 and the base 22.
X guide rails 82, 82 arranged so as to extend in the X direction at both left and right edges of the X guide rails 82, 82
Guide rails 83, 8 which are guided by and extend in the Y direction
3 and a camera unit 9 which is an optical system unit guided along the Y guide rails 83 and 83 and attached to a joint arm 84. The camera unit 9 is X and Y by the joint arm 84. Move in the direction.

The camera unit 9 includes an objective lens 91 and an electrode pad P with respect to the bump 41 as shown in FIG.
, A camera 93 that forms an image of the bump and electrode pad P, a half mirror 94 that reflects the image from the upper objective lens 91 to the camera 93 side, and a half mirror 94 that reflects the image from the lower objective lens 92 to the half. Half mirror 95 and prism 9 that form an optical path to the back side of mirror 94
6 and shutters 97 and 9 for independently opening and closing the optical paths from the upper objective lens 91 and the lower objective lens 92, respectively.
8. In FIG. 3, the details of the drive mechanism 31 and the fluid supply path 6 of the wafer mounting table 3 shown in FIG. 1 are omitted.

In this embodiment, after the wafer W is mounted on the wafer mounting table 3, the positioning unit 8 is interposed between the cover 21 and the base 22, and these are overlapped to seal the internal space. Then, the positioning of the probe card 40 and the wafer W is performed using the camera unit 9.

For this alignment, for example, images of the bumps 41 and the pads P are sequentially captured at a low magnification and a high magnification as shown in FIGS. 6A and 6B, and based on these images, the operator, for example, mounts a wafer. The mounting table 3 may be driven, or a plurality of cross marks may be attached to the probe card 40 and the wafer W, for example, at a plurality of positions, and these may be used.

According to this configuration, since the probe card surface and the wafer surface can be simultaneously monitored and the position can be adjusted in real time, high-accuracy position adjustment can be realized without being affected by errors in the mechanical control system. In addition, since the positioning can be performed in a state where the probe card and the wafer W are sealed, high-precision positioning can be performed even in a high temperature or low temperature state.

[0031]

According to the present invention, a burn-in device
Perform stable electrical measurements regardless of ambient temperature
I can do it.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view showing an embodiment of the present invention.

FIG. 2 is a perspective view showing an overview of an embodiment of the present invention.

FIG. 3 is a longitudinal sectional view showing another embodiment of the present invention.

FIG. 4 is a plan view showing another embodiment of the present invention.

FIG. 5 is a side view showing the camera unit.

FIG. 6 is an explanatory diagram showing an image in a camera unit.

FIG. 7 is a longitudinal sectional view showing a conventional probe device.

[Description of Signs] 2 container 21 cover section 22 base section 3 wafer mounting table 32 temperature adjustment section 40 probe card 41, 42 bump 5 electrode 6 fluid supply path 61 fluid discharge path S1 damper chamber (internal space) 8 positioning unit

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁶ Identification code FI G01R 31/28 G01R 31/28 K

Claims (1)

[Claims] 1. A burn-in apparatus for performing an inspection by adjusting a temperature of an object to be inspected, comprising: a container forming an accommodation space for accommodating the object to be inspected; A mounting portion for mounting, and a probe card having a plurality of contacts arranged so as to collectively contact the plurality of electrode pads of the test object mounted on the mounting portion, respectively; A connection portion provided on the probe card at one location outside the housing space of the container and electrically connected to the contact and an external connector; Means for pressing the probe card against the placed test object with the pressure of a fluid.