JPH10313081A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPH10313081A JPH10313081A JP13750897A JP13750897A JPH10313081A JP H10313081 A JPH10313081 A JP H10313081A JP 13750897 A JP13750897 A JP 13750897A JP 13750897 A JP13750897 A JP 13750897A JP H10313081 A JPH10313081 A JP H10313081A
- Authority
- JP
- Japan
- Prior art keywords
- plate
- adhesive
- oxide film
- semiconductor device
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000853 adhesive Substances 0.000 claims abstract description 40
- 230000001070 adhesive effect Effects 0.000 claims abstract description 40
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000005751 Copper oxide Substances 0.000 claims abstract description 16
- 229910000431 copper oxide Inorganic materials 0.000 claims abstract description 16
- 239000013078 crystal Substances 0.000 claims abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052802 copper Inorganic materials 0.000 claims abstract description 7
- 239000010949 copper Substances 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 4
- 230000005855 radiation Effects 0.000 claims description 15
- 239000012670 alkaline solution Substances 0.000 claims description 4
- 238000007789 sealing Methods 0.000 abstract description 10
- 239000011347 resin Substances 0.000 abstract description 9
- 229920005989 resin Polymers 0.000 abstract description 9
- 239000007767 bonding agent Substances 0.000 abstract 4
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 description 6
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Chemical Treatment Of Metals (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、放熱板を設けた半
導体装置であって、放熱板に放熱フィンを取り付けた半
導体装置およびその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device provided with a radiator plate, and more particularly to a semiconductor device having a radiator fin attached to a radiator plate and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】従来、放熱板に放熱フィンを取り付けた
半導体装置では、放熱板に接着剤を介して放熱フィンを
取り付けていた。2. Description of the Related Art Heretofore, in a semiconductor device in which a radiating fin is attached to a radiating plate, the radiating fin is attached to the radiating plate via an adhesive.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、放熱板
は銅等の金属からなる条材をプレス加工により打ち抜き
製作されることが多く、これにより製造された放熱板の
表面は面祖度が低いため、接着剤との密着性が悪く、接
着剤と放熱板の接着強度が弱かった。However, heat sinks are often manufactured by stamping a strip made of metal such as copper by pressing, and the surface of the heat sink manufactured by this method has a low surface roughness. The adhesive strength with the adhesive was poor, and the adhesive strength between the adhesive and the heat sink was low.
【０００４】接着強度が弱いと、放熱フィンに加わる衝
撃や半導体装置の熱変化による膨張および収縮により、
放熱板と接着剤が接着面において剥離し、放熱フィンが
接着剤と共に半導体装置から剥離してしまうことがあっ
た。[0004] If the bonding strength is weak, expansion and shrinkage due to shock applied to the radiation fins and thermal change of the semiconductor device cause
In some cases, the heat sink and the adhesive are separated from each other on the bonding surface, and the heat radiation fins are separated from the semiconductor device together with the adhesive.
【０００５】本発明は以上の問題を鑑みてなされたもの
で、放熱板に接着剤を介して放熱フィンを取り付けた半
導体装置であって、放熱板と接着剤の密着性を向上さ
せ、放熱板と放熱フィンの接着強度の強い半導体装置を
提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and is directed to a semiconductor device in which a radiating fin is attached to a radiating plate via an adhesive. It is an object of the present invention to provide a semiconductor device having a strong bonding strength between the heat sink and the heat radiation fin.
【０００６】[0006]
【課題を解決するための手段】本発明の特徴は、放熱板
に接着剤を介して放熱フィンを取り付ける半導体装置に
おいて、放熱板の接着剤と接する領域に酸化膜を設けた
ことにある。A feature of the present invention is that, in a semiconductor device in which a heat radiating fin is attached to a heat radiating plate via an adhesive, an oxide film is provided in a region of the heat radiating plate in contact with the adhesive.
【０００７】また、他の特徴は、前記酸化膜が、針状結
晶の銅酸化膜であることにある。Another feature is that the oxide film is a needle-like crystal copper oxide film.
【０００８】また、他の特徴は、放熱板に接着剤を介し
て放熱フィンを取り付ける半導体装置の製造方法であっ
て、放熱板の接着剤と接する領域に酸化膜を形成し、酸
化膜を形成した部分と放熱フィンを接着剤を介して接着
することにある。Another feature is a method of manufacturing a semiconductor device in which a radiating fin is attached to a radiating plate via an adhesive, wherein an oxide film is formed in a region of the radiating plate in contact with the adhesive, and the oxide film is formed. The radiating fin is bonded to the radiating fin via an adhesive.
【０００９】また、他の特徴は、放熱板を銅系の材料か
ら形成し、アルカリ溶液の中に浸漬し、揺動することに
より酸化膜を形成することにある。Another feature resides in that the heat radiating plate is formed of a copper-based material, immersed in an alkaline solution, and oscillated to form an oxide film.
【００１０】[0010]
【発明の実施形態】以下、本発明の実施形態について、
図面を参照しつつ詳細に説明する。Hereinafter, embodiments of the present invention will be described.
This will be described in detail with reference to the drawings.
【００１１】本発明による半導体装置の実施形態は、図
１に示すように、半導体素子１、半導体素子を搭載する
ダイパッド２、半導体素子１とワイヤー３を介して導通
するインナーリード４、インナーリード４に連なり外部
導通端子となるアウターリード５、銅材からなりその表
面全体に針状結晶の銅酸化膜６が形成され半導体素子１
を搭載するダイパッド２に接着剤７を介して接着された
放熱板８、半導体素子１、ダイパッド２、ワイヤー３、
インナーリード４、放熱板８の一部を封止する封止樹脂
９、放熱板８の一部および封止樹脂９の一部に接着剤１
０を介して取り付けられた放熱フィン１１からなる半導
体装置である。As shown in FIG. 1, a semiconductor device according to an embodiment of the present invention comprises a semiconductor element 1, a die pad 2 on which the semiconductor element is mounted, an inner lead 4 electrically connected to the semiconductor element 1 via a wire 3, and an inner lead 4. An outer lead 5 which is connected to an external conductive terminal and a copper oxide film 6 of a needle-like crystal made of a copper material is formed on the entire surface thereof.
, A heat sink 8, a semiconductor element 1, a die pad 2, a wire 3,
An adhesive 1 is applied to the inner lead 4, a sealing resin 9 for sealing a part of the heat sink 8, a part of the heat sink 8 and a part of the sealing resin 9.
This is a semiconductor device including a heat-dissipating fin 11 attached via a first fin.
【００１２】また、本実施形態による半導体装置の放熱
構造は、半導体素子１に発生した熱がダイパッド２を介
して放熱板８に伝わり、放熱板８に伝わった熱は放熱フ
ィン１１に伝わり、放熱フィン１１より放熱される構造
となっている。Further, in the heat dissipation structure of the semiconductor device according to the present embodiment, the heat generated in the semiconductor element 1 is transmitted to the heat dissipation plate 8 via the die pad 2, and the heat transmitted to the heat dissipation plate 8 is transmitted to the heat dissipation fins 11, The heat is radiated from the fins 11.
【００１３】放熱板８の表面全体に針状結晶の銅酸化膜
６が形成されているので、放熱板８の接着剤１０と接す
る領域が粗面化され、放熱板８と接着剤１０の密着性が
良くなり、放熱板８と放熱フィン１１の接着強度が強く
なる。Since the copper oxide film 6 of the acicular crystal is formed on the entire surface of the heat radiating plate 8, the area of the heat radiating plate 8 in contact with the adhesive 10 is roughened, and the close contact between the heat radiating plate 8 and the adhesive 10 is made. The heat dissipation plate 8 and the heat dissipation fins 11 have high adhesive strength.
【００１４】また、銅酸化膜６は放熱板８の表面全体に
形成されているので、放熱板８と封止樹脂９の密着性も
良くなる効果がある。Further, since the copper oxide film 6 is formed on the entire surface of the radiator plate 8, there is an effect that the adhesion between the radiator plate 8 and the sealing resin 9 is improved.
【００１５】また、本発明による半導体装置の製造方法
の実施形態は、ダイパッド２、ダイパッドを保持するサ
ポートバー、インナーリード４、アウターリード５、お
よびダムバーを設けたリードフレームを準備し、銅系の
金属を加工することにより放熱板８を形成し、該放熱板
８をアルカリ溶液の中に浸漬して揺動することにより放
熱板８の表面全面に針状結晶の銅酸化膜６を形成し、半
導体素子１をダイパッド２に搭載し、ワイヤー３により
半導体素子１の導通部とインナーリード４を接続し、ダ
イパッド２の半導体素子１搭載面と異なる面に接着剤７
を介して銅酸化膜６を形成した放熱板８を接着し、半導
体素子１、ダイパッド２、ワイヤー３、インナーリード
４、および放熱板８の一部を封止樹脂９により樹脂封止
し、ダムバーを除去し、樹脂封止領域外のサポートバー
を除去し、封止樹脂から放熱板８が露出している面に接
着剤１０を介して放熱フィン１１を接着することにより
半導体装置を製造する半導体装置の製造方法である。In the embodiment of the method of manufacturing a semiconductor device according to the present invention, a lead frame provided with a die pad 2, a support bar for holding the die pad, an inner lead 4, an outer lead 5, and a dam bar is prepared. A radiator plate 8 is formed by processing metal, and the radiator plate 8 is immersed in an alkaline solution and rocked to form a copper oxide film 6 of a needle-like crystal on the entire surface of the radiator plate 8. The semiconductor element 1 is mounted on the die pad 2, the conductive portion of the semiconductor element 1 is connected to the inner lead 4 by the wire 3, and an adhesive 7 is attached to a surface of the die pad 2 different from the semiconductor element 1 mounting surface.
The semiconductor device 1, the die pad 2, the wire 3, the inner lead 4, and a part of the heat sink 8 are resin-sealed with a sealing resin 9, and a dam bar is formed. And a support bar outside the resin sealing region is removed, and a heat radiating fin 11 is bonded via an adhesive 10 to a surface where the heat radiating plate 8 is exposed from the sealing resin. It is a manufacturing method of an apparatus.
【００１６】本実施形態において、放熱板８の表面全体
に針状銅酸化膜６を設けたが、これは任意であり、放熱
フィンと接着する領域にのみ銅酸化膜６を設けてもよい
し、放熱フィンと接着する領域を含む一部の領域にのみ
銅酸化膜６を設けてもよい。In the present embodiment, the acicular copper oxide film 6 is provided on the entire surface of the heat radiating plate 8, but this is optional, and the copper oxide film 6 may be provided only in a region to be bonded to the heat radiating fin. Alternatively, the copper oxide film 6 may be provided only in a part of the region including the region to be bonded to the radiation fin.
【００１７】また、本実施形態において、放熱板８を銅
材より形成したが、これは任意であり、放熱性の良い金
属使用すればよい。In this embodiment, the heat radiating plate 8 is made of a copper material. However, the heat radiating plate 8 is optional, and a metal having a good heat radiating property may be used.
【００１８】また、本実施形態において、放熱板８の表
面に針状結晶の銅酸化膜６を設けたが、これは任意であ
り、その他の酸化膜でもよい。Further, in the present embodiment, the needle-shaped crystal copper oxide film 6 is provided on the surface of the heat radiating plate 8, but this is optional, and other oxide films may be used.
【００１９】また、本実施形態において、放熱板８の表
面に銅酸化膜６を設けたが、同様に放熱フィン１１の接
着剤１０と接する領域に酸化膜を設ける構成にすれば、
放熱フィン１１と接着剤の密着性が良くなり、放熱板８
と放熱フィン１１の接着強度を強くすることができ、放
熱板８と放熱フィン１１両方の接着剤１０と接する領域
に銅酸化膜を設けると放熱板８と放熱フィン１１の接着
強度がさらに強くなる。In this embodiment, the copper oxide film 6 is provided on the surface of the heat radiating plate 8. However, if an oxide film is provided in a region of the heat radiating fin 11 in contact with the adhesive 10,
The adhesiveness between the radiation fin 11 and the adhesive is improved, and the radiation plate 8 is improved.
When the copper oxide film is provided in a region where both the heat radiating plate 8 and the heat radiating fin 11 are in contact with the adhesive 10, the bonding strength between the heat radiating plate 8 and the heat radiating fin 11 is further increased. .
【００２０】[0020]
【発明の効果】以上の本発明の半導体装置によれば、放
熱板に接着剤を介して放熱フィンを取り付ける半導体装
置において、放熱板の接着剤を塗布する領域に酸化膜が
設けられているので、放熱板の表面が粗面化され放熱板
と放熱フィンの接着において、放熱板と接着剤の密着性
を向上させることができ、それにより放熱板と放熱フィ
ンの接着強度を強くすることができる。According to the semiconductor device of the present invention described above, in the semiconductor device in which the radiating fins are attached to the radiating plate via the adhesive, the oxide film is provided in the region of the radiating plate where the adhesive is applied. The surface of the radiator plate is roughened, and the adhesion between the radiator plate and the fin can be improved in bonding the radiator plate and the radiator fin, thereby increasing the bonding strength between the radiator plate and the radiator fin. .
【００２１】また、前記酸化膜を針状結晶の銅酸化膜と
したことにより、放熱板の表面が特に粗面化され、放熱
板と接着剤の密着性がさらに向上し、放熱板と放熱フィ
ンの接着強度をさらに強くすることができる。Further, since the oxide film is a needle-like crystal copper oxide film, the surface of the heat sink is particularly roughened, the adhesiveness between the heat sink and the adhesive is further improved, and the heat sink and the heat sink fin are formed. Can be further strengthened.
【００２２】また、本発明の半導体装置の製造方法によ
れば、放熱板の接着剤と接する領域が粗面で、放熱板と
接着剤の密着性をが良く、放熱板と放熱フィンの接着強
度の強い半導体装置を提供することができる。Further, according to the method of manufacturing a semiconductor device of the present invention, the area of the radiator plate in contact with the adhesive is rough, the adhesiveness between the radiator plate and the adhesive is good, and the adhesive strength between the radiator plate and the radiator fins is improved. Semiconductor device having a high strength can be provided.
【００２３】また、放熱板を銅系の材料から形成し、ア
ルカリ溶液の中に浸漬し、揺動することにより酸化膜を
形成する半導体装置の製造方法により、放熱板の接着剤
と接する領域が針状結晶の銅酸化膜となり、特に粗面化
され、放熱板と接着剤の密着性がさらに向上し、放熱板
と放熱フィンの接着強度がさらに強い半導体装置を提供
することができる。Further, according to the method of manufacturing a semiconductor device in which a heat sink is formed from a copper-based material, immersed in an alkaline solution, and oscillated to form an oxide film, the area of the heat sink in contact with the adhesive is reduced. The semiconductor device becomes a copper oxide film of a needle-like crystal, is particularly roughened, further improves the adhesion between the heat sink and the adhesive, and provides a semiconductor device having a stronger adhesive strength between the heat sink and the heat radiation fin.
【図１】本発明の実施例を示す断面図である。FIG. 1 is a sectional view showing an embodiment of the present invention.
１ 半導体素子 ２ ダイパッド ３ ワイヤー ４ インナーリード ５ アウターリード ６ 銅酸化膜 ７ 接着剤 ８ 放熱板 ９ 封止樹脂 １０ 接着剤 １１ 放熱フィン DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Die pad 3 Wire 4 Inner lead 5 Outer lead 6 Copper oxide film 7 Adhesive 8 Heat radiating plate 9 Sealing resin 10 Adhesive 11 Heat radiating fin
Claims (4)
り付ける半導体装置であって、放熱板の接着剤と接する
領域に酸化膜を設けたことを特徴とする半導体装置。1. A semiconductor device having a heat radiation fin attached to a heat radiation plate via an adhesive, wherein an oxide film is provided in a region of the heat radiation plate in contact with the adhesive.
ることを特徴とする請求の範囲１記載の半導体装置。2. The semiconductor device according to claim 1, wherein said oxide film is a copper oxide film of a needle crystal.
り付ける半導体装置の製造方法であって、放熱板の接着
剤と接する領域に酸化膜を形成し、酸化膜を形成した部
分と放熱フィンを接着剤を介して接着することを特徴と
する半導体装置の製造方法。3. A method for manufacturing a semiconductor device, comprising: attaching a heat radiation fin to a heat radiating plate via an adhesive; forming an oxide film in a region of the heat radiating plate in contact with the adhesive; Bonding a semiconductor device via an adhesive.
記酸化膜は放熱板をアルカリ溶液の中に浸漬し、揺動す
ることにより形成することを特徴とする請求の範囲３記
載の半導体装置の製造方法。4. The heat radiation plate according to claim 3, wherein the heat radiation plate is formed from a copper-based material, and the oxide film is formed by immersing the heat radiation plate in an alkaline solution and oscillating the heat radiation plate. A method for manufacturing a semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13750897A JPH10313081A (en) | 1997-05-12 | 1997-05-12 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13750897A JPH10313081A (en) | 1997-05-12 | 1997-05-12 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10313081A true JPH10313081A (en) | 1998-11-24 |
Family
ID=15200316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13750897A Pending JPH10313081A (en) | 1997-05-12 | 1997-05-12 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10313081A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1480270A3 (en) * | 2003-05-22 | 2005-07-13 | Shinko Electric Industries Co., Ltd. | Packaging component and semiconductor package |
| US7294912B2 (en) | 2004-08-06 | 2007-11-13 | Denso Corporation | Semiconductor device |
| JP2008270551A (en) * | 2007-04-20 | 2008-11-06 | Nichicon Corp | Positive thermistor apparatus and method of manufacturing the same |
| US9230878B2 (en) | 2013-04-12 | 2016-01-05 | Lenovo Enterprise Solutions (Singapore) Pte. Ltd. | Integrated circuit package for heat dissipation |
| CN113707785A (en) * | 2020-05-20 | 2021-11-26 | 佛山市国星光电股份有限公司 | Preparation method of LED light-emitting device, LED light-emitting device and display panel |
-
1997
- 1997-05-12 JP JP13750897A patent/JPH10313081A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1480270A3 (en) * | 2003-05-22 | 2005-07-13 | Shinko Electric Industries Co., Ltd. | Packaging component and semiconductor package |
| US7190057B2 (en) | 2003-05-22 | 2007-03-13 | Shinko Electric Industries Co., Ltd. | Packaging component and semiconductor package |
| US7294912B2 (en) | 2004-08-06 | 2007-11-13 | Denso Corporation | Semiconductor device |
| DE102005036996B4 (en) | 2004-08-06 | 2018-05-03 | Denso Corporation | Semiconductor device |
| JP2008270551A (en) * | 2007-04-20 | 2008-11-06 | Nichicon Corp | Positive thermistor apparatus and method of manufacturing the same |
| US9230878B2 (en) | 2013-04-12 | 2016-01-05 | Lenovo Enterprise Solutions (Singapore) Pte. Ltd. | Integrated circuit package for heat dissipation |
| CN113707785A (en) * | 2020-05-20 | 2021-11-26 | 佛山市国星光电股份有限公司 | Preparation method of LED light-emitting device, LED light-emitting device and display panel |
| CN113707785B (en) * | 2020-05-20 | 2024-04-09 | 佛山市国星光电股份有限公司 | Preparation method of LED light-emitting device, LED light-emitting device and display panel |
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