JPH10297959A - High frequency dielectric ceramic composition and dielectric resonator - Google Patents
High frequency dielectric ceramic composition and dielectric resonatorInfo
- Publication number
- JPH10297959A JPH10297959A JP9108723A JP10872397A JPH10297959A JP H10297959 A JPH10297959 A JP H10297959A JP 9108723 A JP9108723 A JP 9108723A JP 10872397 A JP10872397 A JP 10872397A JP H10297959 A JPH10297959 A JP H10297959A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- value
- resonator
- composition
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 33
- 239000000919 ceramic Substances 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 8
- 239000002131 composite material Substances 0.000 claims abstract description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052839 forsterite Inorganic materials 0.000 abstract description 5
- 239000002241 glass-ceramic Substances 0.000 abstract description 5
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052573 porcelain Inorganic materials 0.000 description 19
- 239000000463 material Substances 0.000 description 14
- 238000005259 measurement Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
(57)【要約】
【課題】アルミナ、フォルステライトよりも低い比誘電
率を有し、かつ、ガラスセラミックよりも高いＱ値を有
する高周波用誘電体磁器組成物および誘電体共振器を提
供する。
【解決手段】金属元素としてＢ、Ｓｉからなる複合酸化
物であって、各金属元素の酸化物による重量比組成式を
ｘＢ2 Ｏ3 ・ｙＳｉＯ2 と表した時、前記ｘ、ｙが０．
１≦ｘ≦２０、８０≦ｙ≦９９．９、ｘ＋ｙ＝１００を
満足するとともに、比誘電率が４以下、かつ１０ＧＨｚ
でのＱ値が２０００以上のものであり、また該組成物を
誘電体共振器の磁器基板や支持部材として用いたもので
ある。
(57) Abstract: Provided is a high-frequency dielectric ceramic composition and a dielectric resonator having a lower dielectric constant than alumina and forsterite and a higher Q value than glass ceramic. A B as metal elements, a composite oxide comprising Si, when the weight ratio composition formula of an oxide of each metal element expressed as xB 2 O 3 · ySiO 2, wherein x, y is 0.
1 ≦ x ≦ 20, 80 ≦ y ≦ 99.9, x + y = 100, the relative dielectric constant is 4 or less, and 10 GHz
Is 2000 or more, and the composition is used as a ceramic substrate or a supporting member of a dielectric resonator.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、例えば、マイクロ
波、ミリ波等の高周波で用いられる高周波用誘電体組成
物に係わり、例えば、マイクロ波、ミリ波集積回路等の
マイクロ波、ミリ波帯域で用いられる回路素子用基板、
誘電体共振器用支持部材、誘電体共振器、誘電体導波
路、誘電体アンテナ等の材料として有用な高周波用誘電
体磁器組成物、並びに誘電体磁器を支持部材を介して基
板に固定した誘電体共振器に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency dielectric composition used at a high frequency such as a microwave and a millimeter wave, for example, a microwave and a millimeter wave band such as a microwave and a millimeter wave integrated circuit. Substrate for circuit elements used in
High frequency dielectric ceramic composition useful as a material for a dielectric resonator support member, a dielectric resonator, a dielectric waveguide, a dielectric antenna, and the like, and a dielectric in which the dielectric ceramic is fixed to a substrate via the support member It relates to a resonator.
【０００２】[0002]
【従来技術】マイクロ波、ミリ波集積回路をはじめとす
る高周波用回路素子では、誘電体磁器を支持部材を介し
て基板に固定する構造が採用される場合がある。例え
ば、誘電体共振器制御型マイクロ波発信器は、図１に示
すように、誘電体磁器１を支持部材２を介して磁器基板
３に取り付け、誘電体磁器１の外部に漏れ出る電磁界Ｈ
を利用して磁器基板３に設けたストリップライン４に結
合させ、これらを金属ケース５に収容させた構造を有し
ている。2. Description of the Related Art In a high-frequency circuit element such as a microwave or millimeter-wave integrated circuit, a structure in which a dielectric ceramic is fixed to a substrate via a support member may be adopted. For example, as shown in FIG. 1, a dielectric resonator control type microwave transmitter attaches a dielectric porcelain 1 to a porcelain substrate 3 via a support member 2, and an electromagnetic field H leaking out of the dielectric porcelain 1.
Is used to connect to a strip line 4 provided on the porcelain substrate 3, and these are accommodated in a metal case 5.
【０００３】この種の高周波用回路においては、誘電体
磁器１の電界が支持部材２を介して漏れるのを制御する
ことによって、無負荷Ｑの高い共振系が構成されること
になるため、支持部材には誘電率が低く誘電損失（ｔａ
ｎδ）が小さい（Ｑ値が大きい）材料を使用する必要が
ある。このため、従来、支持部材の材料としては比誘電
率が約７、測定周波数１０ＧＨｚでのＱ値が約１５００
０のフォルステライトが採用され、また、磁器基板の材
料としては主として比誘電率が約１０、測定周波数１０
ＧＨｚでのＱ値が２００００以上のアルミナ磁器が採用
されていた（例えば、特開昭６２−１０３９０４号公報
等参照）。In this type of high-frequency circuit, by controlling the electric field of the dielectric ceramic 1 to leak through the support member 2, a resonance system with a high no-load Q is formed. The member has a low dielectric constant and a dielectric loss (ta
It is necessary to use a material having a small nδ) (a large Q value). For this reason, conventionally, as a material of the support member, the relative dielectric constant is about 7, and the Q value at the measurement frequency of 10 GHz is about 1500.
Forsterite of 0 is used, and the relative permittivity is about 10 and the measurement frequency is 10
Alumina porcelain having a Q value of 20,000 or more at GHz has been employed (for example, see Japanese Patent Application Laid-Open No. 62-103904).
【０００４】一方、比誘電率が低い材料としては、従
来、コーディエライトが知られているが、焼成温度範囲
がきわめて狭いことから緻密な焼結体が得がたく、ガラ
ス材を添加することによって、比誘電率が４〜６、測定
周波数１０ＧＨｚでのＱ値が１０００程度のガラスセラ
ミックが用いられていた（例えば、特開昭６１−２３４
１２８号公報等参照）。On the other hand, cordierite is conventionally known as a material having a low relative dielectric constant. However, since a sintering temperature range is extremely narrow, it is difficult to obtain a dense sintered body. For example, a glass ceramic having a relative dielectric constant of 4 to 6 and a Q value of about 1000 at a measurement frequency of 10 GHz has been used (for example, Japanese Patent Application Laid-Open No. 61-234).
No. 128).
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、従来用
いられていたアルミナ、及びフォルステライトの比誘電
率はそれぞれ約１０及び約７程度であり、近年における
高周波数帯の誘電体共振器の普及にともない、より低誘
電率材料が求められていた。However, the relative dielectric constants of alumina and forsterite which have been conventionally used are about 10 and about 7, respectively, and with the recent widespread use of high frequency band dielectric resonators. Therefore, a material having a lower dielectric constant has been demanded.
【０００６】一方、低誘電率材料として用いられている
ガラスセラミック等の磁器は比誘電率が約４〜６と小さ
いが、Ｑ値が１０ＧＨｚで１０００程度であり、近年に
おける高周波数帯の誘電体共振器の普及に伴い、より高
いＱ値の低誘電率材料が求められていた。On the other hand, a porcelain such as glass ceramic used as a low dielectric constant material has a relative dielectric constant as small as about 4 to 6, but has a Q value of about 1000 at 10 GHz, and has a dielectric material in a high frequency band in recent years. With the spread of resonators, a low Q material having a higher Q value has been demanded.
【０００７】また、共振器の磁器基板に主として使用さ
れているアルミナ磁器は比誘電率が約１０と比較的高
く、高インピーダンスのストリップラインを形成しよう
とすると、ライン幅が小さくなりすぎて（通常１μｍ以
下）、断線が生じたり、相対的なライン幅のばらつきが
大きくなり、マイクロ波集積回路の不良率が増大すると
いう問題があった。Further, alumina porcelain mainly used for a porcelain substrate of a resonator has a relatively high relative dielectric constant of about 10, and the line width becomes too small to form a high-impedance strip line (usually). (1 μm or less), there is a problem that disconnection occurs, the relative variation in line width increases, and the failure rate of the microwave integrated circuit increases.
【０００８】他方、この種の磁器基板におけるストリッ
プラインのインピーダンスは、基板の厚さが一定であれ
ば、その誘電率及びストリップラインの幅にそれぞれ反
比例するため、ライン幅を小さくする代わりに、誘電率
の低い基板材料を使用することによってもインピーダン
スを高めることができ、このため、より低誘電率材料が
求められていた。On the other hand, if the thickness of the substrate is constant, the impedance of the strip line in this type of porcelain substrate is inversely proportional to the dielectric constant and the width of the strip line. The use of a low-permittivity substrate material can also increase the impedance, which has led to a need for lower dielectric constant materials.
【０００９】本発明は、アルミナ、フォルステライトよ
りも低い比誘電率を有し、かつ、ガラスセラミックより
も高いＱ値を有する高周波用誘電体磁器組成物および誘
電体共振器を提供することを目的とする。An object of the present invention is to provide a high-frequency dielectric ceramic composition and a dielectric resonator having a relative dielectric constant lower than that of alumina and forsterite, and a Q value higher than that of glass ceramic. And
【００１０】[0010]
【課題を解決する為の手段】本発明者等は、前記課題を
解決すべく鋭意検討した結果、金属元素としてＢ、Ｓｉ
のみからなり、これらの元素の酸化物による重量比組成
式をｘＢ2 Ｏ3 ・ｙＳｉＯ2 と表した時に、ｘ、ｙが一
定の範囲である場合にはアルミナ、フォルステライトよ
りも低い比誘電率を有し、かつガラスセラミックよりも
高いＱ値を有する高周波用誘電体磁器組成物が得られる
ことを見い出し、本発明に至った。Means for Solving the Problems The present inventors have conducted intensive studies to solve the above-mentioned problems, and as a result, as a metal element, B, Si
When the weight ratio composition formula of the oxides of these elements is expressed as xB 2 O 3 .y SiO 2 , when x and y are within a certain range, the relative dielectric constant is lower than that of alumina or forsterite. And a high frequency dielectric ceramic composition having a higher Q value than that of the glass ceramic was obtained, and the present invention was achieved.
【００１１】即ち、本発明の高周波用誘電体磁器組成物
は、金属元素としてＢ、Ｓｉからなる複合酸化物であっ
て、各金属元素の酸化物による重量比組成式をｘＢ2 Ｏ
3 ・ｙＳｉＯ2 と表した時、前記ｘ、ｙが０．１≦ｘ≦
２０、８０≦ｙ≦９９．９、ｘ＋ｙ＝１００を満足する
とともに、比誘電率が４以下、かつ１０ＧＨｚでのＱ値
が２０００以上のものである。That is, the high frequency dielectric ceramic composition of the present invention is a composite oxide comprising B and Si as metal elements, and the weight ratio composition formula of each metal element oxide is xB 2 O.
When expressed as 3 · ySiO 2 , the x and y are 0.1 ≦ x ≦
20, 80 ≦ y ≦ 99.9, x + y = 100, the relative dielectric constant is 4 or less, and the Q value at 10 GHz is 2000 or more.
【００１２】また、基板上に支持部材を介して誘電体磁
器を固定してなる誘電体共振器において、前記基板およ
び／または前記支持部材を、前述した誘電体磁器組成物
により構成したものである。Further, in a dielectric resonator in which a dielectric ceramic is fixed on a substrate via a supporting member, the substrate and / or the supporting member are made of the above-described dielectric ceramic composition. .
【００１３】[0013]
【作用】本発明の誘電体磁器組成物では、誘電率が４以
下、１０ＧＨｚにおけるＱ値が２０００以上の低誘電率
の特性を得ることができ、このような低誘電率、高Ｑ値
の誘電体磁器を、例えば、誘電体共振器の支持部材およ
び／または基板に用いることにより、高インピーダンス
のマイクロ波用集積回路などの高周波用回路素子を信頼
性を損なうことなく製造することができる。According to the dielectric ceramic composition of the present invention, it is possible to obtain a low dielectric constant characteristic having a dielectric constant of 4 or less and a Q value of 2000 or more at 10 GHz, and a dielectric material having such a low dielectric constant and a high Q value. By using the body porcelain as, for example, a support member and / or a substrate of a dielectric resonator, a high-frequency circuit element such as a high-impedance microwave integrated circuit can be manufactured without impairing reliability.
【００１４】[0014]
【発明の実施の形態】本発明の高周波用誘電体磁器組成
物は、金属元素としてＢ、Ｓｉからなる複合酸化物であ
って、各金属元素の酸化物による重量比組成式をｘＢ2
Ｏ3 ・ｙＳｉＯ2 と表した時、前記ｘ、ｙが０．１≦ｘ
≦２０、８０≦ｙ≦９９．９、ｘ＋ｙ＝１００を満足す
るものである。BEST MODE FOR CARRYING OUT THE INVENTION The dielectric ceramic composition for a high frequency wave according to the present invention is a composite oxide comprising B and Si as metal elements, and the weight ratio composition formula of the oxide of each metal element is xB 2.
When expressed as O 3 .y SiO 2 , the x and y are 0.1 ≦ x
≦ 20, 80 ≦ y ≦ 99.9, x + y = 100.
【００１５】本発明の高周波用磁器組成物の成分組成を
前記範囲に限定したのは、次の理由による。すなわち、
Ｂ2 Ｏ3 の重量百分率を示すｘを０．１≦ｘ≦２０（８
０≦ｙ≦９９．９）としたのはｘが０．１よりも小さい
場合（ｙが９９．９よりも大きい場合）は焼結体が緻密
化せず、ｘが２０を越えると（ｙが８０よりも小さい場
合）良好な焼結体が得られずＱ値が低くなるからであ
る。特にＢ2 Ｏ3 量を示すｘは、Ｑ値を３０００以上と
するという点から０．２〜１０重量％（９０≦ｙ≦９
９．８）が望ましい。The reason why the component composition of the high frequency ceramic composition of the present invention is limited to the above range is as follows. That is,
X indicating the weight percentage of B 2 O 3 is 0.1 ≦ x ≦ 20 (8
(0 ≦ y ≦ 99.9) is that when x is smaller than 0.1 (when y is larger than 99.9), the sintered body is not densified, and when x exceeds 20, (y Is smaller than 80) because a good sintered body cannot be obtained and the Q value becomes low. In particular, x indicating the amount of B 2 O 3 is 0.2 to 10% by weight (90 ≦ y ≦ 9) from the viewpoint that the Q value is 3000 or more.
9.8) is desirable.
【００１６】測定周波数１０ＧＨｚでのＱ値が２０００
以上を満足するようにしたのは、Ｑ値が２０００以上あ
る場合には、近年における高周波数帯の誘電体共振器に
も十分対応することができるからである。Ｑ値は、高け
れば高い程望ましいが、特には、測定周波数１０ＧＨｚ
でのＱ値が3 ０００以上であることが望ましい。When the Q value at a measurement frequency of 10 GHz is 2000
The reason for satisfying the above is that when the Q value is 2000 or more, it is possible to sufficiently cope with recent high frequency band dielectric resonators. The Q value is preferably as high as possible, but in particular, the measurement frequency is 10 GHz.
Is preferably 3000 or more.
【００１７】また、本発明の誘電体磁器組成物では、主
相はガラス相であり、他に結晶相として、クリストバラ
イト、トリジマイト、クオーツ等が析出する場合がある
が、組成によってその析出相が異なる。本発明の誘電体
磁器組成物ではガラス相のみであってもよい。In the dielectric porcelain composition of the present invention, the main phase is a glass phase, and cristobalite, tridymite, quartz, etc. may be precipitated as other crystal phases, but the precipitated phase differs depending on the composition. . In the dielectric ceramic composition of the present invention, only the glass phase may be used.
【００１８】また、本発明の誘電体共振器は、図１に示
すように、基板３上に支持部材２を介して誘電体磁器１
を固定してなり、支持部材２または基板３、或いは支持
部材２及び基板３が、上記誘電体磁器組成物からなるも
のである。この場合、誘電体磁器１としては、周知の材
料が用いられる。誘電体磁器１として、本発明の誘電体
磁器組成物を用いても良い。As shown in FIG. 1, the dielectric resonator according to the present invention comprises a dielectric ceramic 1 on a substrate 3 via a support member 2.
Is fixed, and the support member 2 or the substrate 3 or the support member 2 and the substrate 3 are made of the above-described dielectric ceramic composition. In this case, a known material is used for the dielectric porcelain 1. As the dielectric ceramic 1, the dielectric ceramic composition of the present invention may be used.
【００１９】本発明の誘電体磁器は、原料粉末として、
例えば、Ｂ2 Ｏ3 粉末，ＳｉＯ2 粉末を用い、所定の割
合で秤量し、湿式混合した後乾燥し、得られた粉末に適
量のバインダを加えて成形し、この成形体を大気中１２
５０〜１４００℃で焼成することにより得られる。The dielectric porcelain of the present invention comprises
For example, B 2 O 3 powder and SiO 2 powder are weighed at a predetermined ratio, wet-mixed and dried, and the obtained powder is molded by adding an appropriate amount of a binder.
It is obtained by firing at 50 to 1400 ° C.
【００２０】尚、本発明の誘電体磁器組成物は、金属元
素として、Ｂ、Ｓｉからなるものであるが、例えば、粉
砕ボールや原料粉末の不純物として、Ａｌ、Ｃａ、Ｂ
ａ、Ｚｒ，Ｎｉ，Ｆｅ，Ｃｒ，Ｐ，Ｎａ，Ｔｉ等が混入
する場合があるが、この場合も、上記組成を満足する限
り低誘電率で、高Ｑ値の磁器を得ることができる。The dielectric porcelain composition of the present invention is composed of B and Si as metal elements. For example, Al, Ca, B
In some cases, a, Zr, Ni, Fe, Cr, P, Na, Ti and the like may be mixed. In this case, too, a ceramic having a low dielectric constant and a high Q value can be obtained as long as the above composition is satisfied.
【００２１】また、本発明の誘電体磁器組成物では、低
誘電率および高Ｑ値が求められるものであれば、例え
ば、回路素子用基板，誘電体共振器の誘電体磁器，誘電
体導波路，誘電体アンテナ等、どのようなものでも適用
できるが、上記したように、誘電体共振器の支持部材ま
たは基板に最適である。In the dielectric ceramic composition of the present invention, if a low dielectric constant and a high Q value are required, for example, a circuit element substrate, a dielectric ceramic of a dielectric resonator, a dielectric waveguide Any material such as a dielectric antenna and the like can be applied, but as described above, it is most suitable for a support member or a substrate of a dielectric resonator.
【００２２】また、本発明の誘電体磁器組成物は、図２
に示すように、平行平板導体１１の間に誘電体１２を挟
持してなる誘電体導波管の前記誘電体１２としても最適
である。FIG. 2 shows a dielectric porcelain composition of the present invention.
As shown in the figure, the dielectric waveguide 12 having the dielectric 12 sandwiched between the parallel plate conductors 11 is also optimal as the dielectric 12.
【００２３】また、本発明の誘電体磁器組成物は、図３
に示すように、基板１３の上下面に導体１４を形成して
なる誘電体アンテナの前記基板１３としても最適であ
る。The dielectric porcelain composition of the present invention is shown in FIG.
As shown in the figure, the substrate 13 of the dielectric antenna having the conductors 14 formed on the upper and lower surfaces of the substrate 13 is also optimal.
【００２４】[0024]
【実施例】原料粉末として純度９５％のＢ2 Ｏ3 、純度
９９％のＳｉＯ2 粉末を用い、これらを焼結体が表１に
示す組成となるように秤量し、１５時間湿式混合した
後、乾燥し、得られた粉末に適量のバインダを加えて造
粒し、これを１０００ｋｇ／ｃｍ2 の圧力の下で成形し
て直径１２ｍｍ厚さ８ｍｍの成形体を得た。この成形体
を大気中表１に示す温度で２時間焼成して直径１０ｍｍ
厚さ５ｍｍに研磨し、誘電体磁器試料を得た。EXAMPLES material powder as a purity of 95% B 2 O 3, with a purity of 99% SiO 2 powder, and these sintered bodies were weighed so as to have the composition shown in Table 1 were mixed for 15 hours Wet After drying, the obtained powder was granulated by adding an appropriate amount of a binder, and this was molded under a pressure of 1000 kg / cm 2 to obtain a molded body having a diameter of 12 mm and a thickness of 8 mm. The molded body was fired in the atmosphere at a temperature shown in Table 1 for 2 hours and a diameter of 10 mm
Polishing was performed to a thickness of 5 mm to obtain a dielectric ceramic sample.
【００２５】この試料を用いて誘電体円柱共振器法にて
周波数約２０ＧＨｚにおいて比誘電率およびＱ値を測定
した。Ｑ値に関してはＱｆ＝一定とみなして１０ＧＨｚ
におけるＱ値を求めた。その結果を表１に示す。Using this sample, the dielectric constant and the Q value were measured at a frequency of about 20 GHz by the dielectric cylinder resonator method. Regarding the Q value, it is assumed that Qf = constant and 10 GHz
The Q value at was determined. Table 1 shows the results.
【００２６】[0026]
【表１】 [Table 1]
【００２７】表１によれば、本発明に係る高周波用誘電
体磁器組成物は、比誘電率が３．８以下と低く、しかも
測定周波数１０ＧＨｚでのＱ値が２０００以上と高い値
を示すことがわかる。According to Table 1, the dielectric ceramic composition for high frequencies according to the present invention has a low relative dielectric constant of 3.8 or less and a high Q value of 2000 or more at a measurement frequency of 10 GHz. I understand.
【００２８】尚、図４に試料Ｎo.５のＸ線回折チャート
図を示す。この図４から、ガラス相の他に、クリストバ
ライトが析出していることが判る。FIG. 4 shows an X-ray diffraction chart of Sample No. 5. From FIG. 4, it can be seen that cristobalite is precipitated in addition to the glass phase.
【００２９】[0029]
【発明の効果】本発明の高周波用誘電体磁器組成物で
は、４以下の低い比誘電率を有し、１０ＧＨｚでのＱ値
が２０００以上の高いＱ値を示す磁器が得られ、例え
ば、誘電体共振器の支持部材または基板に用いることに
より、高インピーダンスのマイクロ波用集積回路などの
高周波用回路素子を信頼性を損なうことなく製造するこ
とができる。また、低誘電率および高Ｑ値であるため、
例えば、マイクロ波，ミリ波集積回路等のマイクロ波，
ミリ波帯域で用いられる回路素子用基板，誘電体共振器
用支持部剤，誘電体共振器，誘電体導波路，誘電体アン
テナ等の材料として最適である。According to the dielectric ceramic composition for high frequencies of the present invention, a porcelain having a low relative dielectric constant of 4 or less and a high Q value of 2000 or more at 10 GHz can be obtained. By using it for a support member or a substrate of a body resonator, a high-frequency circuit element such as a high-impedance microwave integrated circuit can be manufactured without loss of reliability. Also, because of its low dielectric constant and high Q value,
For example, microwaves, such as microwaves and millimeter-wave integrated circuits,
It is optimal as a material for a circuit element substrate, a dielectric resonator support material, a dielectric resonator, a dielectric waveguide, a dielectric antenna, etc. used in the millimeter wave band.
【図１】高周波用回路素子の一例を示す誘電体共振器制
御型マイクロ波発信器の概略断面図である。FIG. 1 is a schematic cross-sectional view of a dielectric resonator control type microwave transmitter showing an example of a high-frequency circuit element.
【図２】誘電体導波管を示す斜視図である。FIG. 2 is a perspective view showing a dielectric waveguide.
【図３】誘電体アンテナを示す斜視図である。FIG. 3 is a perspective view showing a dielectric antenna.
【図４】試料Ｎｏ．５の結晶構造を示すＸ線回折チャー
ト図である。FIG. 5 is an X-ray diffraction chart showing the crystal structure of Sample No. 5. FIG.
１・・・誘電体磁器 ２・・・支持部材 ３・・・磁器基板 ４・・・ストリップライン ５・・・金属ケース DESCRIPTION OF SYMBOLS 1 ... Dielectric porcelain 2 ... Support member 3 ... Porcelain board 4 ... Strip line 5 ... Metal case
Claims (2)
物であって、各金属元素の酸化物による重量比組成式を
ｘＢ2 Ｏ3 ・ｙＳｉＯ2 と表した時、前記ｘ、ｙが０．
１≦ｘ≦２０、８０≦ｙ≦９９．９、ｘ＋ｙ＝１００を
満足するとともに、比誘電率が４以下、かつ１０ＧＨｚ
でのＱ値が２０００以上であることを特徴とする高周波
用誘電体磁器組成物。1. A composite oxide comprising B and Si as metal elements, wherein x and y are 0 when a weight ratio composition formula of each metal element by oxide is expressed as xB 2 O 3 .y SiO 2. .
1 ≦ x ≦ 20, 80 ≦ y ≦ 99.9, x + y = 100, the relative dielectric constant is 4 or less, and 10 GHz
The dielectric ceramic composition for high frequency waves, wherein the Q value at 2000 is 2000 or more.
定してなる誘電体共振器において、前記基板および／ま
たは前記支持部材が、金属元素の酸化物による重量比組
成式をｘＢ2 Ｏ3 ・ｙＳｉＯ2 と表した時、前記ｘ、ｙ
が０．１≦ｘ≦２０、８０≦ｙ≦９９．９、ｘ＋ｙ＝１
００を満足するとともに、比誘電率が４以下、かつ１０
ＧＨｚでのＱ値が２０００以上であることを特徴とする
誘電体共振器。2. A dielectric resonator in which a dielectric ceramic is fixed on a substrate via a supporting member, wherein said substrate and / or said supporting member is composed of a metal element oxide expressed by a weight ratio composition formula of xB 2. When expressed as O 3 .y SiO 2 , the x, y
Is 0.1 ≦ x ≦ 20, 80 ≦ y ≦ 99.9, x + y = 1
00 and a relative permittivity of 4 or less and 10
A dielectric resonator having a Q value of 2000 or more at GHz.
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|---|---|---|---|
| JP10872397A JP3554136B2 (en) | 1997-04-25 | 1997-04-25 | High frequency dielectric ceramic composition and dielectric resonator |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10872397A JP3554136B2 (en) | 1997-04-25 | 1997-04-25 | High frequency dielectric ceramic composition and dielectric resonator |
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| Publication Number | Publication Date |
|---|---|
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| JP3554136B2 JP3554136B2 (en) | 2004-08-18 |
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ID=14491931
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6832081B1 (en) | 1999-10-13 | 2004-12-14 | Kyocera Corporation | Nonradiative dielectric waveguide and a millimeter-wave transmitting/receiving apparatus |
-
1997
- 1997-04-25 JP JP10872397A patent/JP3554136B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6832081B1 (en) | 1999-10-13 | 2004-12-14 | Kyocera Corporation | Nonradiative dielectric waveguide and a millimeter-wave transmitting/receiving apparatus |
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| Publication number | Publication date |
|---|---|
| JP3554136B2 (en) | 2004-08-18 |
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