JPH10275310A - Thin film magnetic head and its production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a magneto-resistive thin film magnetic head in which width dimensions of a magneto-resistance effect layer and a magneto-resistance effect stabilizing layer are optimized and a manufacturing method therefor. SOLUTION: When manufacturing of the thin film magnetic head in which the magneto-resistance effect layer 13 is laminated on the magneto-resistance effect stabilizing layer 11 via a nonmagnetic insulating layer 12 and then this laminated body is etched to form a magneto-resistance effect element, is executed by using this method, the etching is executed so that a relation: Ws-Wa<=0.2 μm (in which Ws is the width dimension of the magneto-resistance effect stabilizing layer 11 and Wa is the width dimension of the magneto-resistance effect layer 13) is satisfied.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive thin film magnetic head suitable for a hard disk drive or the like for detecting a reproduction signal by a magnetoresistance effect and a method of manufacturing the same.

[0002]

2. Description of the Related Art In a magnetic recording device such as a hard disk device, further high-density recording is required in order to increase the capacity. Therefore, in order to advance high-density recording,
A magnetoresistive thin-film magnetic head (hereinafter referred to as "MR head"), which is a magnetic head suitable for forming a narrow track, is employed.

In this MR head, as shown in FIG. 13, basically, electrodes 102 are attached to both ends of a magnetoresistive element 101 having a magnetoresistive film whose resistivity changes according to the magnitude of a magnetic field. Be composed. By supplying a sense current to the magnetoresistive element 101 from the electrodes 102 at both ends, a change in resistance of the magnetoresistive element 101 due to a signal magnetic field from the magnetic recording medium is detected, and based on the change in resistance, Get playback output. Such an MR head has a feature that the reproduction output does not depend on the medium speed, and a high reproduction output can be obtained even when the medium speed is low.

In general, the magnetoresistive film is magnetically unstable, and an external magnetic field moves a domain wall in the magnetoresistive film. Therefore, in the MR head,
There is a problem that Barkhausen noise is generated due to the movement of the domain wall of the magnetoresistive film in the magnetoresistive element 101. Therefore, in the MR head, it is a major problem to secure the magnetic stability of the magnetoresistive effect film in the magnetoresistive effect element 101 and reduce Barkhausen noise.

Therefore, in order to solve the above-mentioned problem,
As shown in FIG. 14, a magnetoresistive element 200 having a magnetoresistive stabilizing layer 203 acting to enhance the magnetic stability of a magnetoresistive film has been proposed. This magnetoresistive element 200 is configured by laminating a magnetoresistive film 201 having a magnetoresistive effect, a non-magnetic insulating film 202, and a magnetoresistive effect stabilizing layer 203. Here, the magnetoresistance effect stabilizing layer 203 is formed of the magnetoresistance effect layer 2.
01 is a layer for magnetically stabilizing 01. The hard magnetic film 2 having a large coercive force is used as the magnetoresistance effect stabilizing layer 203.
04 and the soft magnetic film 205 having a small coercive force and a large magnetic permeability
Are laminated.

Here, the magnetoresistance effect stabilizing layer 203
Since the soft magnetic film 205 is formed on the hard magnetic film 204, an exchange interaction occurs between the hard magnetic film 204 and the soft magnetic film 205 constituting the magnetoresistance effect stabilizing layer 203. . This exchange interaction is an action in which the partial magnetization of each of two adjacent layers is directed in the same direction.

In the magneto-resistance effect element 200 having such a magneto-resistance effect stabilizing layer 203, a magnetostatic coupling action occurs between the magneto-resistance effect stabilizing layer 203 and the magneto-resistance effect film 201. The magneto-resistance effect film 201 is magnetically stabilized. That is, the magneto-resistance effect film 201
Means that the magnetic stability of the magnetoresistive effect stabilizing layer 203
The greater the magnetic field generated from, the more stabilized.

[0008]

When manufacturing the above-described conventional MR head, the magneto-resistance effect film 201, the non-magnetic insulating film 202, and the magneto-resistance effect stabilizing layer 203 are formed on a substrate or the like. After a thin film is formed on the entire surface, it is formed into a desired shape by etching or the like. As described above, in this MR head, the magnetoresistive film 20
Since the magnetic stability of 1 greatly depends on the magnetoresistance effect stabilizing layer 203, this etching step should not deteriorate the magnetic characteristics of the magnetoresistance effect stabilizing layer 203.

However, in the conventional method of manufacturing an MR head, sufficient consideration has not been given to the etching of the magneto-resistance effect film 201 and the magneto-resistance effect stabilizing layer 203. It could not be said that the magnetic properties were sufficiently exhibited. That is, in the conventional MR head, it cannot be said that the magnetoresistance effect stabilizing layer 203 has a structure that sufficiently stabilizes the magnetoresistance effect film 201.

The present invention has been proposed in view of the above-mentioned conventional circumstances, and has a magnetoresistive effect type thin film magnetic head in which the widths of the magnetoresistive layer and the magnetoresistive stabilizing layer are optimized. And a method for producing the same.

[0011]

A thin-film magnetic head according to the present invention, which has been completed to achieve the above object, has a magneto-resistance effect stabilizing layer, a magneto-resistance effect stabilizing layer, and a magneto-resistance effect stabilizing layer. And a magnetoresistive layer having a soft magnetic film exhibiting an effect, wherein the width dimension of the magnetoresistance effect stabilizing layer is Ws, and the width dimension of the magnetoresistance effect layer is Wa. Ws-Wa ≦ 0.2 μm.

In the thin film magnetic head according to the present invention configured as described above, since the relation of Ws−Wa ≦ 0.2 μm is satisfied, the magnetic field generated from the magnetoresistance effect stabilizing layer is large. In particular, the magnetoresistance effect stabilizing layer has a Ws-W
By having a relationship of a ≦ 0.2 μm, a large magnetic field is generated from the vicinity of both ends, and the magnetoresistive film can be magnetically stabilized.

In the method of manufacturing a thin-film magnetic head according to the present invention, a magneto-resistance effect layer is laminated on a magneto-resistance effect stabilizing layer via a non-magnetic insulating layer, and the laminated body is etched. In the method of manufacturing a thin film magnetic head for forming an effect element, when the width of the magnetoresistance effect stabilizing layer is Ws and the width of the magnetoresistance effect layer is Wa, Ws−Wa ≦ 0.2 μm. The etching is performed so as to have a relationship.

According to the method of manufacturing a thin-film magnetic head according to the present invention having the above-described structure, Ws-Wa ≦ 0.2 μm
Since the magneto-resistance effect stabilizing layer has a relationship of m, a thin-film magnetic head including the magneto-resistance effect stabilizing layer that generates a large magnetic field can be manufactured. According to this method, a thin-film magnetic head that can stabilize a magnetoresistive film by generating a large magnetic field from the vicinity of both ends of the magnetoresistive effect stabilizing layer is manufactured. Can be.

In the method of manufacturing a thin-film magnetic head according to the present invention, when the etching time required for etching the thickness of the laminated body at the etching angle θ is Ta, the etching angle θ It may be one that performs etching of 2 × Ta or more.

In this case, in the method according to the present invention, the width of the magnetoresistive effect stabilizing layer can be made substantially equal to the width of the magnetoresistive effect film because the laminate is sufficiently etched. That is, according to this method, etching is performed substantially vertically without forming inclined surfaces at both ends of the magnetoresistive effect stabilizing layer depending on the etching angle θ. For this reason, according to this method, the relationship of Ws-Wa ≦ 0.2 μm can be achieved, and as described above, it is possible to manufacture a thin-film magnetic head that can stabilize the magnetoresistive film. it can.

Further, in the method of manufacturing a thin-film magnetic head according to the present invention, the first etching for etching the magnetoresistive layer and the non-magnetic insulating layer is performed at an etching angle of 0 °, and thereafter, the etching angle is set. Assuming that the etching time required to etch the thickness of the magnetoresistance effect stabilizing layer with θ is Ts, the second etching of 2 × Ts or more at the etching angle θ may be performed.

In this case, according to the method of the present invention, the width of the magnetoresistance effect stabilizing layer can be made substantially equal to the width of the magnetoresistance effect film. In this method, the etching angle is set to 0
The magnetoresistive effect layer and the non-magnetic insulating layer are formed by the first etching described above. In the first etching, since the etching angle is set to 0 °, the object to be etched is reattached to both ends of the magnetoresistive layer and the nonmagnetic insulating layer. However, in this method, the redeposited portion can be removed by the second etching. Further, the magnetoresistance effect stabilizing layer can be etched substantially vertically by the second etching.

Thus, in the formed magnetoresistive effect element, both ends of the magnetoresistive effect stabilizing layer are substantially vertical, and have a relationship of Ws-Wa ≦ 0.2 μm. Therefore, also in this case, as described above, it is possible to manufacture a thin-film magnetic head capable of stabilizing the magnetoresistive film.

[0020]

Embodiments of the present invention will be described below in detail with reference to the drawings.

The thin-film magnetic head according to the present embodiment is an MR head provided with a magneto-resistance effect element having a magneto-resistance effect stabilizing layer, and as shown in FIG.
And lower gap layer 2 formed on lower shield 1
And a magneto-resistance effect element 3 and a non-magnetic insulating layer 4 formed on the lower gap layer 2, and a protection layer 5 formed on the magneto-resistance effect element 3 except for the front end 3 a and the rear end 3 b.
A conductive layer 6 for sense current formed from over the rear end 3b of the magnetoresistive element 3 to over the nonmagnetic insulating layer 4 and electrically connected to the magnetoresistive element 3; Non-magnetic insulating layer 7 formed on sense current conductor layer 6, and bias current conductor layer 8 formed in non-magnetic insulating layer 7 so as to cross over magnetoresistive element 3.
An upper gap layer 9 formed from the top end 3 a of the magnetoresistive element 3 to the nonmagnetic insulating layer 7 and electrically connected to the magnetoresistive element 3;
And an upper layer shield 10 formed thereon.

In the above MR head, the lower shield 1
The upper shield layer 10 is made of a magnetic material, the lower gap layer 2 is made of a non-magnetic insulating material, and the upper gap layer 9 is made of a non-magnetic material that is electrically good. The lower shield 1, the upper shield 10, the lower gap layer 2, and the upper gap layer 9 function to prevent a magnetic field other than a reproduction target, out of the signal magnetic field from the magnetic recording medium, from being drawn into the magnetoresistive element 3. . That is, since the lower shield 1 and the upper shield 10 are arranged above and below the magnetoresistive element 3 via the lower gap layer 2 and the upper gap layer 9, respectively, of the signal magnetic field from the magnetic recording medium,
The magnetic field other than the reproduction target is guided to the lower shield 1 and the upper shield 10, and only the reproduction target magnetic field is drawn into the magnetoresistive element 3.

On the other hand, the conductor layer 6 for sense current and the upper gap layer 9 become a pair of electrodes respectively connected to both ends of the magnetoresistive element 3 and function to supply a sense current to the magnetoresistive element 3. . When detecting the signal magnetic field from the magnetic recording medium, the sense current conductor layer 6 and the upper gap layer 9 use the magnetoresistive element 3 to detect the signal magnetic field.
Is supplied with a sense current. Here, as described later, the magnetoresistive element 3 is formed by stacking a magnetoresistive stabilizing layer, a non-magnetic insulating layer, and a magnetoresistive layer, and a sense current is supplied only to the magnetoresistive layer. Is done.

The conductor layer 8 for bias current formed in the nonmagnetic insulating layer 7 so as to cross over the magnetoresistive element 3 is for applying a bias magnetic field to the magnetoresistive element 3. That is, when a signal magnetic field is detected from the magnetic recording medium, a bias magnetic field is applied to the magnetoresistive element 3 so that a higher magnetoresistance effect is obtained by flowing a current through the conductor layer 8 for bias current. You.

FIG. 2 shows such an MR head viewed from the medium sliding surface side as indicated by an arrow A in FIG. As shown in FIG. 2, the magnetoresistive element 3 includes a magnetoresistive effect stabilizing layer 11, a nonmagnetic insulating layer 12, and a magnetoresistive layer 13, which are stacked. Here, the magnetoresistive layer 13
As described above, is supplied with a sense current and functions as a magnetic sensing unit for detecting a signal from a recording medium. on the other hand,
The magnetoresistance effect stabilizing layer 11 is magnetostatically coupled to the magnetoresistance effect layer 13 and contributes to the improvement of the magnetic stability of the magnetoresistance effect layer 13.

The magnetoresistive element 3 has a nonmagnetic insulating layer 4 on both sides, and the magnetoresistive element 3 is in a state where it is embedded in the nonmagnetic insulating layer 4. Here, since the nonmagnetic insulating layer 4 is exposed on the medium sliding surface, it is preferable that the nonmagnetic insulating layer 4 be made of a material having excellent sliding characteristics.
For example, a material such as Al ₂ O ₃ , SiO ₂ , SiN _x (Si ₃ N _4, etc.) is suitable.

The magnetoresistive layer 13 and the electrodes are connected at both ends of the upper surface of the magnetoresistive element 3. That is, as shown in FIG. 1, at the tip 3 a of the magnetoresistive element 3, the upper surface of the magnetoresistive layer 13 and the upper gap layer 9 are electrically connected, and the rear end of the magnetoresistive element 3 In the portion 3b, the upper surface of the magnetoresistive layer 13 and the conductor layer 6 for sense current are electrically connected. Here, the magnetoresistance effect stabilizing layer 11
As shown in FIG. 2, since the side surface is insulated by the nonmagnetic insulating layer 4 and the upper surface thereof is insulated by the nonmagnetic insulating layer 12, no sense current flows.

M using such a magnetoresistive element 3
In the R head, since a magnetostatic coupling action occurs between the magnetoresistive layer 13 and the magnetoresistive stabilizing layer 11, the magnetic stability of the magnetoresistive layer 13 is increased, and Barkhausen noise is reduced.

Moreover, in this MR head, a sense current is supplied only to the magnetoresistive layer 13, and only the magnetoresistive layer 13 functions as a magnetic sensing portion. Therefore, in this MR head, the thickness of the portion that contributes to the reproduction output is only the thickness of the magnetoresistive layer 13. for that reason,
In this MR head, the thickness of the portion contributing to the reproduction output can be reduced by half as compared with the MR head in which the sense current flows also in the magnetoresistance effect stabilizing layer 11. Then, by reducing the thickness of the magnetoresistive layer 13 contributing to the reproduction output, the current density of the sense current can be increased. Therefore, this MR head can obtain a high reproduction output.

Next, the magnetoresistive element 3 used in the above MR head will be described in more detail.

As described above, the magneto-resistance effect element 3 includes the magneto-resistance effect stabilizing layer 11 and the non-magnetic insulating layer 12
And a magnetoresistive layer 13 serving as a magnetic sensing portion are laminated.

Here, the nonmagnetic insulating layer 12 disposed between the magnetoresistance effect stabilizing layer 11 and the magnetoresistance effect layer 13 is made of A
Any material may be used as long as it is made of a non-magnetic material having electrical insulation such as l ₂ O ₃ . Then, the nonmagnetic insulating layer 1
2 of thickness are desirably thinner in order to narrow the gap of, since it is necessary to maintain insulation between the magnetoresistance effect stabilizing layer 11 and the magnetoresistance effect layer 13, for example, Al ₂
When O ₃ is used, the thickness needs to be about 10 nm or more.

The magnetoresistive layer 13 may include a magnetoresistive film having a magnetoresistive effect. For example, the magnetoresistive layer 13 may be composed of only a magnetoresistive film made of NiFe or the like. A magnetoresistive film made of NiFe or the like may be formed on an underlayer made of Ta or the like.

Here, NiF is formed on an underlayer made of Ta or the like.
When a magnetoresistive film made of e or the like is formed, the magnetoresistive film can be oriented in (111) orientation, thereby reducing the specific resistance of the magnetoresistive film. Since a decrease in the specific resistance of the magnetoresistive film results in a decrease in the impedance of the magnetoresistive film, the provision of the underlayer can improve the reproduction output of the MR head.

On the other hand, in this MR head, the magnetoresistance effect stabilizing layer 11 is made of a hard magnetic film, a hard magnetic film and a soft magnetic film formed on the hard magnetic film, or an antiferromagnetic film. Any of the case where the film and the magnetic film are laminated may be used.

When the magnetoresistance effect stabilizing layer 11 is made of a hard magnetic film, the magnetization direction of the hard magnetic film is determined by the magnetization direction. The hard magnetic film is magnetized in the track width direction to generate a static magnetic field in the track width direction of the magnetoresistive layer 13. Thereby, the magnetoresistive layer 13 becomes
The magnetization direction is aligned in the track width direction by the static magnetic field to form a single magnetic domain. Therefore, this magnetoresistive layer 1
3 operates stably with respect to an external signal magnetic field.

When the magnetoresistance effect stabilizing layer 11 is composed of a hard magnetic film and a soft magnetic film formed on the hard magnetic film, the soft magnetic film is magnetically coupled with the magnetoresistance effect film 13. Act to cause. At this time, the magnetization direction of the soft magnetic film becomes the same as the magnetization direction of the hard magnetic film due to exchange interaction with the hard magnetic film.

In general, even when a hard magnetic film is magnetized in the in-plane direction of the film, it is difficult to completely orient the magnetization direction in the in-plane direction. Will remain. Therefore, usually, the magnetization component of the hard magnetic film includes a component perpendicular to the film. If the magnetoresistance effect stabilizing layer 11 has such a perpendicular component of magnetization, it becomes a factor that impairs the magnetic stability of the magnetoresistance effect layer 13.

However, the magnetoresistance effect stabilizing layer 11
When a hard magnetic film and a soft magnetic film are laminated, this vertical component is blocked by the soft magnetic film. As described above, in the magnetoresistance effect stabilizing layer 11, since the perpendicular component of the magnetization of the hard magnetic film is blocked by the soft magnetic film, the magnetoresistance effect layer 13 does not become magnetically unstable.

Further, when the magnetoresistance effect stabilizing layer 13 is formed by laminating an antiferromagnetic film and a magnetic film, the magnetization direction of the magnetic film is changed by the exchange interaction with the antiferromagnetic film. 13 is the same as the track width direction. At this time, the antiferromagnetic film is formed in a magnetic field in a predetermined direction,
Depending on whether the film is annealed in a magnetic field in a predetermined direction after film formation, the film is fixed to have a predetermined magnetization direction. Therefore, also in this case, the magnetoresistance effect stabilizing layer 11 can magnetically stabilize the magnetoresistance effect layer 13.

In general, in the magnetoresistive element 3 in which the magnetoresistive effect stabilizing layer 11 and the magnetoresistive effect layer 13 are stacked, the shape of both ends of the magnetoresistive effect stabilizing layer 11 and the generated magnetic field Was measured. At this time, as a measurement method, as shown in FIG. 3, a measurement magnetoresistance effect stabilizing layer 16 having inclined surfaces 15 at both ends is formed, and a magnetic field generated from the measurement magnetoresistance effect stabilization layer 16 is formed. Was measured. At this time, the magnetoresistive stabilizing layer 16 for measurement in which the width dimension of the inclined surface 15 (indicated by a in FIG. 3) is variously prepared is prepared.
5 was also measured.

In this measurement, the magnetic field generated by the measuring magnetoresistance effect stabilizing layer 16 is the magnetoresistance effect film 1
The magnetic field about 35 nm above was measured as a position corresponding to position 3. In this measurement experiment, the thickness of the measurement magnetoresistance effect stabilizing layer 16 was set to about 20 nm. FIG. 4 shows the measurement results at this time.

As can be seen from FIG. 4, in the magnetoresistive stabilizing layer 16 for measurement, the demagnetizing field generated near the both ends is large, and the magnetic field generated substantially from the center of the film is relatively small. It has become something. For this reason, in the magnetoresistance effect element 3, the magnetoresistance effect stabilizing layer 11
Is considered to stabilize the magnetoresistive layer 13 by a magnetic field generated from both ends of the film.

As can be seen from FIG. 4, the magnetoresistive stabilizing layer 16 for measurement is generated at both ends as the width dimension a of the inclined surface 15 formed at both ends increases. The resulting magnetic field is small. For this reason, in the magnetoresistive element 3, both ends of the magnetoresistive effect stabilizing layer 11 are preferably etched substantially vertically.

FIG. 5 shows the relationship between the maximum magnetic field generated near both ends and the width a of the inclined surface 15. As can be seen from FIG. 5, when the width of the inclined surface 15 is 0.2 μm or less, the magnetic field generated from the end of the measuring magnetoresistive element 16 is large. Specifically, in this case, the magnetic field generated from the end of the measuring magnetoresistive element 16 is about 90 to 100 Oe or more. For this reason, in the magnetoresistive effect element 3, when the width of the magnetoresistive effect stabilizing layer 11 is Ws and the width of the magnetoresistive effect layer 13 is Wa, there is a relationship of Ws−Wa ≦ 0.2 μm. It is necessary. Therefore, as is apparent from FIGS. 4 and 5, in the MR head according to the present invention, since the magnetoresistance effect stabilizing layer 11 generates a large magnetic field from both ends, the magnetoresistance effect layer 13 is magnetically formed. Can be stabilized.

On the other hand, the method of manufacturing a thin-film magnetic head according to the present invention is applied when manufacturing the above-described MR head.

When manufacturing the above-described MR head, first, as shown in FIG. 6, a lower gap made of a non-magnetic insulator such as Al ₂ O _{3 is} placed on a lower shield 1 made of a magnetic material. The layer 2 is formed. Here, the lower gap layer 2 electrically insulates the lower part of the magnetoresistive element 3 formed in a later step and forms a magnetic gap below the magnetoresistive element 3.

Next, as shown in FIG. 7, a first layer 17 serving as the magnetoresistive effect stabilizing layer 11 is formed on the lower gap layer 2.
A second layer 18 serving as the nonmagnetic insulating layer 12 and a third layer 19 serving as the magnetoresistive layer 13 are sequentially formed to form a thin film layer 20. Here, the thin film layer 20 is to be etched in a later step to become the magnetoresistive element 3, and is formed using the above-described materials. Thereafter, a protective layer 7 made of a non-magnetic insulator such as Al ₂ O _{3 is} formed on the thin film layer 20.

Next, in order to form the thin film layer 20 into a magnetoresistive element 3 having a predetermined shape, a photoresist 21 patterned into a predetermined shape is formed as shown in FIG. Here, the photoresist 21 is formed in a substantially rectangular shape corresponding to the shape of the magnetoresistive element 3.

Thereafter, etching is performed on the substrate surface 22 on which the photoresist 21 is formed. For this etching, ion etching is used.

At this time, as schematically shown in FIG. 9, the substrate surface 22 on which the photoresist 21 is formed faces the scattered ion beam, and the substrate surface 22 is inclined at a predetermined angle θ. Then, ion etching is performed while rotating the substrate surface as shown by an arrow R in FIG. As a result, the surface on which the photoresist 21 is formed is etched by the ion beam incident at a predetermined etching angle θ as shown in FIG.

At this time, the substrate surface 22 on which the photoresist 21 is formed has a portion where the photoresist 21 becomes a shadow and is not uniformly etched. That is, the substrate surface 22 has a portion that is hardly etched near the photoresist 21. This hard-to-etch portion is the photoresist 21 shown in FIG.
When the point projected from the upper end of the photoresist 21 onto the substrate surface at the etching angle θ is A, and the point at the lower end of the photoresist 21 is B, an area surrounded by points A and B is obtained.

In particular, at the point B, the etching is not performed for a time corresponding to the half rotation of the substrate. For this reason, as shown in FIG. 11, when the etching amount at the point A reaches the film thickness of the magnetoresistive element 3, the etching amount at the point B is approximately half. Therefore, in this etching step, when the etching is completed when the amount of etching at point A reaches the thickness of the magnetoresistive element 3, the magnetoresistance effect stabilizing layer 11 becomes
It has inclined surfaces 11a at both ends.

In this state, the magnetoresistance effect stabilizing layer 11
As described above, the magnetization generated from both ends is small. However, in the method according to the present invention, assuming that the time required for the etching amount at the point A to reach the film thickness of the magnetoresistive element 3 is Ta, etching is performed by 2 × Ta or more. Therefore, in this method, the point B
The etching is performed until the etching amount at the point reaches the lower end of the magnetoresistance effect stabilizing layer 11. According to this, the magnetoresistance effect stabilizing layer 11 has substantially vertical both ends without forming the inclined surfaces 11a at both ends.

As a result, in this method, the relationship of Ws-Wa ≦ 0.2 μm as described above can be achieved, and the method has a magnetoresistance effect layer highly stabilized by the magnetoresistance effect stabilizing layer 11. An MR head can be manufactured.

After the etching as described above, the front end electrode, the rear end electrode, the bias magnetic field conductor layer, the upper gap layer, the upper layer shield and the like are formed, and the MR head as shown in FIG. 1 is manufactured. Is done.

Incidentally, the method according to the present invention is not limited to the method described above. In the method according to the present invention, in the etching step, the first etching is performed at an etching angle of 0 °, and the etching time required to etch the magnetoresistance effect stabilizing layer at the etching angle θ is Ts. Then, the second etching of 2 × Ts or more at the etching angle θ may be performed.

In this case, first, in the first etching,
As shown in FIG. 12, the third layer 19 serving as the magnetoresistive layer 13 and the second layer 18 serving as the nonmagnetic insulating layer 12 are etched. In the first etching, the etching angle is set to 0 °, and the third layer 19 and the non-second layer 18 are formed.
Is etched from the vertical direction. Such etching from the vertical direction induces re-adhesion of the object to be etched on the end faces formed by etching the magnetoresistive layer 13 and the nonmagnetic insulating layer 12.

However, in this method, the second etching is performed to remove the re-adhered matter and to form the first layer 17 serving as the magnetoresistance effect stabilizing layer 11.
Is being etched. In the second etching, as described above, by performing etching of 2 × Ts or more, it is possible to etch the third layer 17 substantially vertically without forming inclined surfaces at both ends. The resistance effect element 3 can be formed.

Thus, also in this case, the magnetoresistance effect stabilizing layer 11 can generate a relatively large magnetic field from both ends thereof, and the magnetoresistance effect layer 13 can be magnetically stabilized. Therefore, according to this method, the relationship of Ws-Wa ≦ 0.2 μm as described above can be achieved, and the MR having the magnetoresistance effect layer 13 highly stabilized by the magnetoresistance effect stabilization layer 11 can be achieved.
A head can be manufactured.

In the method according to the present invention, the optimum range of the etching angle may be considered depending on the etching apparatus used.
It is preferable that the angle is 30 ° to 60 °. When the etching angle is smaller than 30 °, there is a possibility that a problem may be caused that the object to be etched is re-adhered to the end face formed by the etching. On the other hand, when the etching angle is 60 ° or more, there may be a case where the etching rate is reduced and the productivity is reduced.

[0062]

As described in detail above, in the thin-film magnetic head and the method of manufacturing the same according to the present invention, the width of the magnetoresistance effect stabilizing layer is Ws, and the width of the magnetoresistance effect layer is Wa. Then, since the relationship of Ws−Wa ≦ 0.2 μm is satisfied, the magnetoresistance effect stabilizing layer can highly magnetically stabilize the magnetoresistance effect layer. Therefore, according to the method of the present invention, it is possible to manufacture a thin-film magnetic head having a magnetoresistance effect stabilizing layer with improved ability to stabilize the magnetoresistance effect layer.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a main part showing an example of an MR head to which the present invention is applied.

FIG. 2 is a front view of a main part of the MR head shown in FIG. 1 as viewed from a medium sliding surface side.

FIG. 3 is a cross-sectional view of a measuring magnetoresistance effect stabilizing layer used when measuring the relationship between the shape of the magnetoresistance effect stabilizing layer and the generated magnetic field.

FIG. 4 is a characteristic diagram showing a magnetic field generated from the measurement magnetoresistance effect stabilizing layer shown in FIG. 3;

FIG. 5 is a characteristic diagram showing a relationship between a width dimension of an inclined surface and a maximum generated magnetic field.

FIG. 6 is a fragmentary cross-sectional view for explaining the method for manufacturing the thin-film magnetic head according to the present invention.

FIG. 7 is a fragmentary cross-sectional view for explaining the method for manufacturing the thin-film magnetic head according to the present invention.

FIG. 8 is an essential part perspective view for explaining the method for manufacturing the thin-film magnetic head according to the present invention.

FIG. 9 is a schematic configuration diagram schematically showing ion etching.

FIG. 10 is a fragmentary cross-sectional view for explaining the etching step.

FIG. 11 is a cross-sectional view of a main part showing a state in which point A in FIG. 10 is etched so as to be located at a position corresponding to the film thickness of the magnetoresistive element.

FIG. 12 is a cross-sectional view of a principal part for describing an etching step in another embodiment of the technique according to the present invention.

FIG. 13 is a schematic plan view showing a configuration of a conventional MR head.

FIG. 14 is a perspective view showing a magnetoresistive element in a conventional MR head.

[Explanation of symbols]

REFERENCE SIGNS LIST 1 lower shield, 2 lower gap layer, 3 magnetoresistive element, 4 nonmagnetic insulating layer, 5 protective layer, 6 conductor layer for sense current, 7 nonmagnetic insulating layer, 8 conductor layer for bias current, 9 upper gap layer, 10 Upper shield, 1
REFERENCE SIGNS LIST 1 magnetoresistance effect stabilizing layer, 12 nonmagnetic insulating layer, 13
Magnetoresistive layer

Claims (7)

[Claims] 1. A thin-film magnetic head comprising: a magnetoresistance effect stabilizing layer; and a magnetoresistance effect layer having a soft magnetic film exhibiting a magnetoresistance effect laminated on the magnetoresistance effect stabilizing layer. When the width of the effect stabilizing layer is Ws and the width of the magnetoresistive layer is Wa, Ws-Wa
A thin film magnetic head having a relationship of ≦ 0.2 μm. 2. The thin-film magnetic head according to claim 1, wherein said magnetoresistance effect stabilizing layer comprises a hard magnetic film. 3. The thin-film magnetic head according to claim 1, wherein said magnetoresistance effect stabilizing layer has a hard magnetic film and a soft magnetic film. 4. The thin-film magnetic head according to claim 1, wherein said magnetoresistance effect stabilizing layer has an antiferromagnetic film and a soft magnetic film. 5. A method for manufacturing a thin-film magnetic head in which a magneto-resistance effect layer is laminated on a magneto-resistance effect stabilizing layer via a non-magnetic insulating layer and the laminated body is etched to form a magneto-resistance effect element. When the width of the magnetoresistance effect stabilizing layer is Ws and the width of the magnetoresistance effect layer is Wa, Ws−Wa
A method of manufacturing a thin-film magnetic head, wherein the etching is performed so as to have a relationship of ≦ 0.2 μm. 6. In the etching, when an etching time required to etch the thickness of the stacked body at an etching angle θ is Ta, etching is performed at an etching angle θ of 2 × Ta or more. The method for manufacturing a thin-film magnetic head according to claim 5, wherein 7. At the time of the etching, a first etching for etching the magneto-resistance effect layer and the non-magnetic insulating layer is performed by setting an etching angle to 0 °, and thereafter,
The second etching of 2 × Ts or more is performed at an etching angle θ when an etching time required to etch the thickness of the magnetoresistance effect stabilizing layer at the etching angle θ is Ts. Item 6. The method for manufacturing a thin film magnetic head according to Item 5.