JPH10270619A - Method for manufacturing semiconductor device - Google Patents

Abstract

(57) [Summary] [PROBLEMS] To improve the use efficiency of a stage frame material. SOLUTION: A die stage 209 having a fixing part 210 in the periphery is individually manufactured, and then a chip 300 is mounted on the die stage 209, and then the die stage 209 is fixed to the lead frame 100 by the fixing part 210. Alternatively, after mounting a chip on a die stage of a stage frame including a plurality of die stages, the die stage is separated and the fixing portion 210 is fixed to the lead frame 100.
The pitch of the repeating pattern of the stage frame can be made shorter than the pitch of the lead frame, and the utilization efficiency of the stage frame material is improved.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device in which a lead wire is drawn from a semiconductor chip mounted on a die stage by using a lead frame, and more particularly to a method for reducing the amount of material used for the die stage. . The present invention further relates to a method for grounding a die stage. The present invention also relates to a method for manufacturing a semiconductor device, in which a die stage is securely fixed to a lead frame when a semiconductor chip is sealed in a container.

[0002]

2. Description of the Related Art A method of manufacturing a semiconductor device in which a semiconductor chip is mounted on a die stage, the lead is drawn out using a lead frame, and then sealed in a container, for example, is sealed with a resin is manufactured. Since chips can be packaged continuously using a frame, it is suitable for automatic encapsulation, and is widely used in the manufacture of semiconductor devices.

Conventionally, in a method of manufacturing a semiconductor device in which a semiconductor chip mounted on a die stage is sealed in a container using a lead frame, a stage frame having a die stage arranged at the same pitch as the lead frame is used. I was Hereinafter, a manufacturing process of a conventional semiconductor device will be described with reference to an example of a manufacturing process of a resin-sealed semiconductor device.

FIG. 8 is a perspective view of a conventional lead frame, showing a state in which a stage frame is fixed to the lead frame. FIG. 9 is a plan view of a conventional lead frame and a stage frame, and FIGS. 9A and 9B show patterns of the lead frame and the stage frame, respectively.

Referring to FIG. 8, in the conventional method, first, the semiconductor chip 300 is mounted on the die stage of the stage frame 200. Referring to FIG. 9B, the stage frame 200 includes side rails 1 of the lead frame.
01, between two parallel side rails 201 overlapping
Die stage 2 at the same pitch as the lead frame
09 are arranged in a line. Stage frame 200
Of the lead frame 100
In the same manner as described above, they are supported in parallel by a fixed frame 204 connecting them. The die stage 209 is connected to the side rail 201 by the pinch bar 208 and is supported at a position depressed from the upper surface of the side rail 201 of the stage frame 200 by the thickness of the chip 300 or more. Therefore, referring to FIG.
When fixed to the bottom surface of the side rail 201, the top surface of the chip 300 mounted on the die stage 209 is at the same height as or lower than the bottom surface of the side rail 201.

Next, the lead frame 100 is superimposed on the stage frame 200 so that the leads 103 are arranged on the upper surface of the chip 300, and the chip 300 and the stage frame 20 are stacked.
Fixed on 0.

Next, a pad 302 for a circuit terminal provided on the upper surface of the chip 300 and a tip of an inner lead portion of the lead 103 are connected to a wire 302 by wire bonding.
Connect with.

Next, after the chip 300 is sealed with resin, the leads 103 and the die stage 209 are attached to the side rails 10.
The semiconductor device is cut off from the substrate 1 and 201, the dam bar is cut and removed, and then the lead 103 is bent to manufacture a resin-encapsulated semiconductor device.

In the above-described conventional method of manufacturing a semiconductor device, the lead frame 100 and the stage frame 200 are overlapped and fixed, resin-sealed, and thereafter divided into individual semiconductor devices. In such a method, in order to overlap the lead frame 100 and the stage frame 200, it is necessary that the repeating pitches of both the lead frame 100 and the stage frame 200 be the same. Generally, the repeating pitch of the lead frame 100 is significantly longer than the width of the chip 300. Therefore, the repetition pitch of the die stage 209 on which the chip 300 is mounted is significantly longer than the width of the chip 300. That is, the repetition pitch of the stage frame 200 is considerably larger than the pitch simply required for mounting the chip 300 or the width of the stage frame 200 itself. As a result, an expensive stage frame material is excessively consumed in a region other than the region where the die stage 209 is formed, for example, in a punched portion, resulting in an increase in cost.

Further, the die stage is preferably grounded from the viewpoint of high frequency characteristics and electrostatic breakdown, and conventionally such grounding has been made by wire-bonding the ground electrode and the die stage.

Further, it may be difficult to fix the stage frame to the lead frame. For example, when the electric resistance and contact resistance of the material of the stage frame and the lead frame are small and spot welding is difficult, and when the material of the stage frame or the lead frame is hard, crimping is difficult.

[0012]

As described above, in the conventional method for manufacturing a semiconductor device, after mounting a chip on a stage frame, the lead frame and the stage frame are overlapped with each other and sealed with a resin. Therefore, the repeat pitch of the die stage of the stage frame must be the same as the repeat pitch of the lead frame, and there is a problem that the stage frame material is consumed in many parts other than the die stage formation, resulting in cost increase. Was.

Further, the conventional manufacturing method has a problem that spot welding or crimping becomes difficult depending on the material of the stage frame and the lead frame. SUMMARY OF THE INVENTION It is an object of the present invention to provide a method of manufacturing a semiconductor device, which can effectively reduce the repeat pitch of the die stage from the repeat pitch of the lead frame in order to effectively use the stage frame material for forming the die stage. I do. Another object of the present invention is to provide a method of easily grounding a die stage in the method of manufacturing a semiconductor device. Another object of the present invention is to provide a method for facilitating spot welding or pressure bonding between a lead frame and a stage frame, and easily fixing the lead frame and the stage frame.

[0014]

1 and 2 are process charts of a first embodiment of the present invention, showing a process before a container is enclosed in a manufacturing process of a semiconductor device using a lead frame. FIG. 1A is a perspective view of a stage frame,
(B) is an AB cross-sectional view, (c) is a perspective view of a stage frame on which a chip is mounted, and (d) is a perspective view after the stage frame is divided. 2A shows a perspective view when the die stage is fixed to the lead frame, and FIG. 2B shows a developed view thereof. FIG. 4 is a plan view of a lead frame and a stage frame according to the first embodiment of the present invention.
(A) and (b) show the patterns of the lead frame and the stage frame, respectively. FIG. 5 is a sectional view of the fixing portion of the first embodiment of the present invention, and shows the superposition of the materials in the vicinity of the fixing portion when fixing the die stage to the lead frame. FIG. 6 is an explanatory view of a second embodiment of the present invention, showing a die stage fixed to a lead frame. 6A is a plan view, FIG. 6B is an EF sectional view, and FIG. 6C is a developed perspective view of FIG. 6A.

In order to solve the above-mentioned problems, a method of manufacturing a semiconductor device having a first configuration according to the present invention is described with reference to FIGS. 1D and 2 by using a die stage having a fixing portion 210 protruding from the periphery. 209 individually and separately;
Next, the semiconductor chip 300 is placed on the die stage 209.
Mounting the lead frame 100 on the die stage 209 and the chip 300, and then fixing the fixing portion 210 to the lead frame 10.
And a step of fixing to 0,
The second configuration refers to the die stage 209 in the method of manufacturing a semiconductor device having the first configuration, with reference to FIG.
Is manufactured by dividing a stage frame 200 in which a plurality of die stages 209 each having a fixing portion 210 protruding from the periphery are integrally arranged, and a semiconductor device having a third configuration. The manufacturing method is shown in Figure 1.
With reference to FIG. 7, a semiconductor chip 30 is mounted on a die stage 209 of a stage frame 200 in which a plurality of die stages 209 having a fixing portion 210 protruding from the periphery are provided.
0, and then the stage frame 20
0, separating the die stage 209 individually, then, arranging the lead frame 100 on the die stage 209 and the chip 300, and then attaching the fixing portion 210 to the lead frame 100. And a fourth step of fixing.
The structure of the stage frame 200 is the same as that of the stage frame 200 in the method of manufacturing a semiconductor device having the first or third structure with reference to FIG.
Is a pair of parallel side rails 201, a die stage 209 disposed between the side rails 201 at an equal pitch in the extending direction of the side rails 201, and the die stage 209 is attached to the side rails 201. And a pinch bar 208 for supporting, and cutting the side rail 201 at the pitch interval, and forming a die 210 having, as the fixing portion 210, a section of the side rail 201 supported by the pinch bar 208 on both sides of the die stage 209. The fifth embodiment is characterized in that the stage 209 is manufactured, and a fifth configuration is described with reference to FIGS. 1, 2 and 4 by a pinch bar 208 between two parallel first side rails 201. Die stage 2 supported by the first side rail 201
09 cuts the stage frame 200 arranged at the first pitch P in the extending direction of the first side rail 201 at the first pitch P, and the stage frame 200
Is fixed to the pinch bar 2 on both sides of the die stage 209.
08, and a step of dividing the die stage 209 supported by the semiconductor chip 300 onto the die stage 209.
And then the lead 103 supported on the second side rail 101 by the dam bar 102 between the two parallel second side rails 101 is arranged in the extending direction of the second side rail 101. The lead frame 100 arranged at a second pitch P ₀ longer than the first pitch P.
A step of disposing the fixing part 210 on the die stage 209 and the chip 300, and then fixing the fixing part 210 to the second side rail 101. Referring to FIG. 6, in the method of manufacturing a semiconductor device having any one of the first to third configurations, pad 30 provided on the upper surface of chip 300 is formed.
1 and the fixing part 210 are electrically connected by a wire 303, and the step of sealing the wire 303, the chip 300 and the die stage 209 in a package, and , The seventh configuration is
Referring to FIG. 7, in the method of manufacturing a semiconductor device having any one of the first to third configurations, the lead 103 grounded outside the semiconductor device or the lead connected to a power supply or a ground electrode. A step of electrically connecting a short-circuit lead 103a extending part of 103 to the outside of the chip 300 to the fixing part 210; and placing the short-circuit lead 103a, the chip 300 and the die stage 209 in a package. The eighth structure is characterized in that it includes a step of sealing, and the eighth structure is such that, with reference to FIG. The die stage 209 is connected to the lead frame 10.
In a method for manufacturing a semiconductor device having a step of fixing the lead frame 10 to the lead frame 10,
0 between the fixing portion 210 and the lead frame 100.
And a spot welding process with a metal 501 having a resistivity higher than that of the material interposed therebetween, and
As for the ninth configuration, referring to FIG. 5B, the die stage 2
09 is fixed to the lead frame 100 to fix the die stage 209 to the lead frame 1.
In the method of manufacturing a semiconductor device having the step of fixing the lead frame 1 and the lead frame 1,
00 between the fixing portion 210 and the lead frame 10.
The crimping is performed by interposing a metal 504 which is softer than the material No. 0.

In the first configuration of the present invention, referring to FIG. 1 (d), after the die stage 209 having the fixing portion 210 protruding from the periphery is separately manufactured, the semiconductor is placed on the die stage 209. The chip 300 is mounted. Although FIG. 1D shows a chip and a die stage during the process according to a third configuration of the present invention described later, the chip and the die stage after the above process in the first configuration have the same shape. For the sake of convenience, the description has been made with reference to FIG. Next, referring to FIG. 2, the lead frame 100 is attached to the die stage 209 and the semiconductor chip 300.
The fixing part 210 is fixed to the lead frame 100 by disposing the fixing part 210 on the lead frame 100. In addition, if the fixing portion 210 of this configuration is fixed to a part of the lead frame 100 and can fix the positions of the lead frame and the die stage, the shape, size,
The number and position can be appropriately selected. For example, the fixed part 210 can be closely attached to the die stage, or can be provided separately from the die stage 209 by a supporting member.

In the first configuration, the die stage 209
Are manufactured in an individually separated shape, the interval between the die stages 209 can be set arbitrarily regardless of the repetition pitch of the lead frame 100. Therefore,
The die stage 209 can be cut from the plate material without waste. Further, since the die stage 209 has a fixing portion 210 and is fixed to the lead frame using the fixing portion 210, the chips can be continuously sealed in the container using the lead frame 100 after fixing. Automation of the packaging process is not hindered.

The second configuration of the present invention relates to a method of manufacturing the die stage having the first configuration. In this configuration, FIG.
, A plurality of die stages 209 are arranged in one row or a plurality of rows, and a portion for connecting and supporting each die stage 209, for example, the pinch bar 208 and the side rail 2.
A die frame 209 is manufactured by using a stage frame 200 in which each die stage 209 is integrally formed by 01 or the like and dividing the stage frame 200 into the die stages 209. The fixing unit 210
Can be formed separately from a portion that connects and supports each die stage 209, or can be configured by part or all of a portion that connects and supports each die stage 209. With this configuration, the die stage 209 can be manufactured by dividing the continuous, for example, hoop-shaped stage frame 200, and thus there is an advantage that automation is easy.

In the third structure of the present invention, referring to FIG. 1A, a stage frame 200 similar to the stage frame of the second structure, that is, a stage in which a plurality of die stages 209 are integrally provided. The frame 200 is used.
In this configuration, the semiconductor chip 300 is mounted on each die stage 209 of the stage frame 200, and then divided into each die stage 209. Therefore, the tip 30
Since 0 is mounted on the die stages continuously arranged in the stage frame, the chip mounting process can be automated easily and the throughput is excellent as compared with mounting on individual die stages. Further, in the stage frame of the present configuration, the repetition pitch of the die stage can be reduced to the chip width. Therefore, the use efficiency of the material of the stage frame is higher than in the conventional method in which the die stage is arranged at the repetition pitch of the lead frame.

The fourth structure of the present invention relates to the stage frames of the second and third structures. In the fourth configuration, the stage frame 200 has a die stage 209 between two parallel side rails 201 along the direction in which the side rails 201 extend, with reference to FIGS. They are arranged at equal pitch. The die stage 209 is supported by the pinch bar 208 on the side rail 201. The side rail 201 is cut at the pitch of the die stage to divide the stage frame 200, and a die stage 209 having a piece of the side rail 201 supported on the pinch bar 208 on both sides is manufactured. In the present configuration, the section of the side rail 201 is the fixing part 210. Therefore, it is not necessary to arrange the fixing portion 210 specially, and the shape of the stage frame 200 can be simplified. The advantage that the distance between the die stages 209 of the second or third configuration described above can be set arbitrarily regardless of the repetition pitch of the lead frame 100 is the same for the stage frame of this configuration. is there. Therefore, in this configuration, the repeating pitch of the die stage 209 can be made dense, so that the die stage 209 can be cut from the stage frame material without waste, and the utilization efficiency of the stage frame material is high.

In a fifth configuration of the present invention, referring to FIG. 4, a stage frame 200 has a die stage 209 pattern disposed at a first pitch between two parallel side rails 101. . In addition, the lead frame 10
0 has two parallel side rails 101 and 201, and has a lead 105 pattern repeatedly arranged at a second pitch between them. The first pitch is shorter than the second pitch.

With reference to FIG. 1, the stage frame is separated into individual die stages 209 by cutting the side rails 201 at a first pitch. This separation step can be performed before or after mounting the semiconductor chip on the die stage.

The cut side rails 201 are supported by pinch bars 208 on both sides of the die stage 209 and serve as a fixing portion 210 for fixing the die stage to the lead frame 100. The fixing portion 210 is overlapped with the side rail 101 of the lead frame 100,
It is fixed. This fixing portion 210 is connected to the lead frame 100.
The side rail of the lead frame and the side rail of the stage frame 200 are arranged so that at least a part thereof can be overlapped. For example, the distance between the two parallel side rails 101 and 201 is the same in the lead frame 100 and the stage frame 200 so that they overlap each other. Further, a part of one or both side rails of the lead frame 100 or the stage frame 200 may be protruded toward the die stage 209, and the protruding portions may be overlapped.

In this configuration, since the stage frame is divided into individual die stages and then fixed to the lead frame, the pitch of the stage frame can be made shorter than the pitch of the lead frame, and the material of the stage frame can be saved. it can.

In the sixth configuration of the present invention, referring to FIG. 6, pads provided on the upper surface of the chip 300, for example, pads for grounding or power supply, and the fixing portion 2 of the die stage.
10 is connected by a wire 303. Further, the wire 303 is packaged so as to cover it or store it in a container. In this configuration, since it is not necessary to provide a lead for grounding or power supply to the lead frame, the shape of the lead frame is simple and compact.

In the seventh configuration of the present invention, referring to FIG. 7, a short-circuit lead piece is provided in which a part of the grounding lead is extended to the fixed portion, and the short-circuit lead piece is used to electrically connect the ground lead to the fixed portion. Connection. Covering the lead with a container is similar to the sixth configuration. In this configuration, the cut surfaces of the lead frame and the stage frame are concentrated in a plane including the lead frame, so that the design of the cutting die is easy.

In the eighth structure of the present invention, referring to FIG. 5A, a metal 501 having a high resistivity is interposed between the fixed portion 210 and the lead frame 100 in the portion to be spot-welded. With this configuration, even if the contact resistance between the fixed portion 210 and the lead frame 100 is small, the electrical resistance between the fixed portion 210 and the lead frame 100 is large,
It becomes easy to get high temperature locally and welding becomes easy. It is desirable that at least one of the welding electrodes 502 for spot welding has a rounded tip in order to locally concentrate the current in a minute area and raise the temperature locally. For the same reason, it is preferable that the metal be small.

In the ninth structure of the present invention, referring to FIG. 5 (b), a soft metal 504 is interposed between the fixing portion 210 and the lead frame 100 at the portion to be crimped and crimped. Since the metal 504 is soft, it is easily crushed and spread at the time of crimping and fills the gap between the fixing portion 210 and the lead frame 100, so that the crimping can be reliably performed.

[0029]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention is a method of manufacturing a resin-encapsulated semiconductor device having a step of mounting a semiconductor chip on a stage frame having a repetitive pattern of a die stage and then dividing the die stage. About the method.

Referring to FIG. 4B, the stage frame 200 used in the first embodiment is provided with a pinch bar 208 between two parallel side rails 201 of a thin plate shape. Die stages 209 supported by 201 are arranged at equal intervals at a pitch P. This pitch P corresponds to the chip 30 on one die stage 209.
When mounting 0, the interval is set such that the chips 300 mounted on the adjacent die stage 209 do not cause an obstacle.

The lead frame 100 is a conventional and commonly used lead frame. Referring to FIG. 4A, the two side rails 101 are connected to the side rails of the stage frame 200 by a fixed frame 104. It is supported at the same interval. The fixed frame 104 is _a die stage 2
It is repeatedly provided with a pitch P ₀ longer than the pitch P of 09. The lead 105 is supported on the side rail 101 by the dam bar 102 in a region surrounded by the fixed frame 104 and the side rail 101.

Side rail 2 of stage frame 200
At 01, a guide hole 205 is opened, for example, near the pinch bar 208. The guide hole 205, together with the guide hole 105 formed at the corresponding position of the side rail 101 of the lead frame 100, is used as positioning means at the time of fixing described later. In addition, these guide holes 205,
105 is a side rail 101 of the lead frame 100.
It is also used for feeding the stage frame 200 and the lead frame 100 together with the square hole 106 and the round hole opened in the.

The stage frame 200 described above is shown in FIG.
Referring to (a), the pinch bar 208 is bent so that the upper surface of the die stage 209 is lower than the upper surface of the side rail 101 by the thickness of the chip 300. This bending process can be performed at the time of manufacturing the stage frame 200 or as a pre-process for mounting the chip.

Next, referring to FIG. 1C, the semiconductor chip 300 is mounted on the die stage 209. Next, the line CD in FIG. 1C provided at intervals of the pitch P.
Along the line, separate the side rails 201, as shown in FIG.
Referring to, the die stage 2 on which the chip 300 is mounted
09 are separated separately. At this time, the die stage 209
Side rail 20 supported by pinch bar 208
One piece is formed as the fixed portion 210. The fixing portion 210 includes a guide hole 205.

Next, referring to FIG. 2, a die stage 209 is fixed to the lead frame 100. First, the guide hole 205 of the fixing part 210 is inserted into the pin 401 on the positioning jig having the guide pin 401 implanted vertically, and the die stage 209 is placed with the chip 300 facing upward. . The recess 402 of the positioning jig is provided if necessary to secure the escape of the pinch bar 208.

Then, the lead frame 100 is sent out,
The guide hole 105 provided in the side rail 101 of the lead frame 100 is inserted into the pin 401, the lead frame 100 and the die stage 209 are aligned, and the lead frame 100 is placed on the chip upper surface.

Next, referring to FIG. 2A, the fixing portion 2
10 and the side rail 101 of the lead frame 100 are spot-welded at a predetermined welding point 500 to fix the die stage 209 to the lead frame 100. This spot welding can be performed by ordinary spot welding in which the fixing portion 209 and the lead frame 100 are overlapped. Further, when the material of the lead frame 100 and the stage frame 200 is iron, copper, 42 alloy or Kovar, referring to FIG. Welding becomes easier by inserting thin pieces of steel or brass and performing spot welding. Further, a thin film of metal 501 having a high resistivity, for example, a nickel or titanium thin film is formed on the upper surface of the fixing portion 210 or the lower surface of the lead frame 100, and spot welding is performed with the metal 501 thin film interposed to facilitate welding. Can also. In these weldings, the current can be effectively concentrated by rounding the tip of the welding electrode to be pressed.

Instead of fixing by spot welding as described above,
The fixing part 210 and the lead frame 100 can be fixed by crimping. In addition to the usual crimping, the material of the lead frame 100 and the stage frame 200 is iron,
When the material is copper, 42 alloy or Kovar, referring to FIG.
A protrusion of a soft metal 504, for example, a protrusion of gold or copper, is formed on the lower surface, and the fixing portion 209 and the lead frame 100 are press-bonded with the metal 504 interposed therebetween. This protrusion is formed by bonding a wire of, for example, gold or copper on the upper surface of the fixing portion 209 and cutting the wire while leaving the bonded tip.

Thereafter, the circuit terminal pads 301 provided on the upper surface of the chip 300 and the leads 103 are connected by wires 302 by wire bonding. FIG. 3 is a perspective view of a lead frame according to the first embodiment of the present invention. After the die stage 209 is fixed to the lead frame 100, FIG.
The lead frame 100 and the die stage 209 removed from the alignment jig 400 are shown. Figure 3
Referring to FIG. 8 and FIG. 8, while the die stage 209 is supported by the side rail 201 in the conventional example, the die stage 209 of the present embodiment is directly fixed to the lead frame by the fixing portion 210 and supported. The difference is that there is no side rail 201 connecting the die stage 209.

After that, a resin-sealed semiconductor device is manufactured through a normal resin sealing process, cutting of leads and pinch bars, and lead bending process. In the first embodiment described above, the semiconductor chip is mounted on the die stage and then divided into individual die stages. However, the semiconductor chip may be mounted after dividing the die stage. In this case, referring to FIG. 2, the divided die stage 209 is placed and positioned on the alignment jig 400 such that the guide hole 205 is penetrated by the pin 401, and then the semiconductor chip 300 is mounted. I do. Thus, the chip 300 can be mounted on the die stage with accurate positioning. Thereafter, a resin-encapsulated semiconductor device is manufactured through the same steps as in the first embodiment.

The second embodiment of the present invention relates to a method for manufacturing a semiconductor device in which a die frame is connected to a ground line. With reference to FIG. 6A, the die stage 20 of the present embodiment example
Reference numeral 9 denotes a protruding piece-shaped fixing portion provided in close contact with both ends of the die stage 209. The die stage 209 having such a shape
When the stage frame used in the first embodiment described above is divided into individual die stages, the pinch bar 20 for connecting the die stage 209 to the side rail 201 is used.
8 is formed by cutting. At this time, chip 3
00 to facilitate automation of the mounting process
It is preferable that the stage frame 200 be divided after mounting the 00 on the die stage 209.

The lead frame 100 is provided with protruding pieces 111 protruding in the facing direction on opposite sides of the side rails 101 of the lead frame 100 facing each other. The die stage 209 on which the chip 300 is mounted is positioned on the lower surface of the lead frame 100 by a positioning device (not shown) that moves by sucking the lower surface of the die stage 209, and the fixing portion 210 is attached to the projecting piece 111 by welding points 500 to each other. Are aligned so that In this state, the fixed portion 210 and the projecting piece 111 are sandwiched by the spot welding electrodes from above and below, and spot welding is performed, so that the fixed portion 210 is welded and fixed to the lower surface of the projecting piece 111.

Next, the pad 301 provided on the upper surface of the chip 300 and the upper surface of the fixed portion 209 are connected by a wire 303 by wire bonding. The wire 303 is connected to the fixed portion 210 on the surface of the fixed portion 210 exposed in the gap between the projecting piece 111 and the chip 300. Of course, if possible, it can be connected to the upper surface of the projecting piece 111 on the fixing part 210. At the same time, the remaining pad 301 and lead 103
Are connected by wire 303 by wire bonding.
Therefore, the bonding time hardly increases.

Next, the chip 300 is sealed with a resin container so as to cover the protruding piece 111. Accordingly, since the wires 303 and the connection positions thereof are sealed in the resin, the semiconductor device having excellent corrosion resistance can be manufactured by suppressing the invasion of the outside air into the connection positions.

The third embodiment of the present invention relates to a method of manufacturing a semiconductor device in which a lead is used as a grounding conductor instead of the wire of the second embodiment. Referring to FIG. 7, the shape and manufacturing method of the die stage 209 and the mounting method of the chip 300 on the die stage 209 are the same as those in the second embodiment.
The lead frame 100 does not have the protruding piece 111 shown in FIG. 6, but some of the leads 103 are connected to the ground potential or the power supply potential of the chip 300. A short-circuit lead piece 103a extending on the fixed portion 209 is formed at a portion of the lead 103, which is grounded or the like, near the fixed portion 209.

The upper surface of the fixed portion 209 is attached to the side frame 101.
During spot welding on the lower surface, the short-circuit lead piece 103a is placed on the welding point 500, and the short-circuit lead piece 103a, the side frame 101, and the fixing portion 209 are welded together. In this method, since the wire bonding position does not change, it is possible to avoid troublesome remodeling of the wire bonding apparatus.
Thereafter, sealing the welding point 500 with resin is the same as in the second embodiment.

[0047]

As described above, according to the present invention, the repetition pitch at which the die stage of the stage frame is arranged can be made shorter than the repetition pitch of the lead frame. Can be reduced. Moreover, a semiconductor device having a structure in which the die stage is grounded can be easily manufactured by using the stage frame.

Furthermore, since the electric resistance between the lead frame and the die frame can be increased, spot welding can be ensured. Further, by interposing a soft metal between the lead frame and the die frame to fill the gap during pressure bonding, pressure bonding can be ensured. Therefore, a highly reliable semiconductor device can be manufactured.

Therefore, the present invention greatly contributes to a reduction in the manufacturing cost of the semiconductor device or an improvement in the reliability of the semiconductor device.

[Brief description of the drawings]

FIG. 1 is a process diagram of the first embodiment of the present invention (No. 1)

FIG. 2 is a process diagram of the first embodiment of the present invention (part 2)

FIG. 3 is a perspective view of a lead frame according to a first embodiment of the present invention.

FIG. 4 is a plan view of a lead frame and a stage frame according to a first embodiment of the present invention.

FIG. 5 is a sectional view of a fixed portion of the first embodiment of the present invention.

FIG. 6 is an explanatory diagram of a second embodiment example of the present invention.

FIG. 7 is a plan view of a third embodiment of the present invention.

FIG. 8 is a perspective view of a conventional lead frame.

FIG. 9 is a plan view of a conventional lead frame and a stage frame.

[Explanation of symbols]

 101, 201 side rail 102 dam bar 103 lead 103a short-circuit lead piece 104, 204 fixing frame 105, 205 guide hole 106, 206 square hole 107, 207 round hole 111 protrusion 208 pinch bar 209 die stage 210 fixing part 300 chip 301 pad 302, 303 wire 400 positioning jig 401 pin 402 recess 500 welding point 501, 504 metal 502, 503 welding electrode 505 crimping jig

Claims (9)

[Claims] A step of separately manufacturing a die stage having a fixing portion projecting from the periphery; a step of mounting a semiconductor chip on the die stage; and a step of mounting a lead frame on the die stage and the die stage. A method for manufacturing a semiconductor device, comprising: a step of disposing on a chip; and a step of fixing the fixing portion to the lead frame. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the die stage is manufactured by dividing a stage frame in which a plurality of die stages having fixed portions protruding from the periphery are integrally arranged. A method for manufacturing a semiconductor device, comprising: 3. A step of mounting a semiconductor chip on a die stage of a stage frame, in which a plurality of die stages having fixing portions protruding from the periphery are arranged,
Separating the stage frame to separate the die stages individually, then arranging a lead frame on the die stage and the chip, and then fixing the fixing portion to the lead frame. A method for manufacturing a semiconductor device, comprising: 4. The method for manufacturing a semiconductor device according to claim 2, wherein said stage frame is provided between two parallel side rails at a constant pitch in the direction in which said side rails extend. A side rail supported by the pinch bar on both sides of the die stage, the die stage being provided and a pinch bar for supporting the die stage on the side rail, the side rail being cut at the pitch interval. A method for manufacturing a semiconductor device, characterized in that the die stage having the section (1) as the fixing portion is manufactured. 5. A die stage, which is supported by the first side rail by a pinch bar between two parallel first side rails, has a first pitch in the extending direction of the first side rail. The arranged stage frame is cut at the first pitch, and the stage frame is fixed to the die stage with fixed portions formed by sections of the first side rails supported by the pinch bars on both sides of the die stage. And a step of mounting a semiconductor chip on the die stage, and then a lead supported on the second side rail by a dam bar is provided between two parallel second side rails. Disposing a lead frame disposed at a second pitch longer than the first pitch in the extending direction of the two side rails on the die stage and the chip;
Next, a step of fixing the fixing portion to the second side rail, the method for manufacturing a semiconductor device. 6. The method for manufacturing a semiconductor device according to claim 1, wherein a pad provided on an upper surface of said chip and said fixed portion are electrically connected by a wire, and Encapsulating the chip and the die stage in a package. 7. The method of manufacturing a semiconductor device according to claim 1, wherein the lead grounded outside the semiconductor device or a part of the lead connected to a power source or a ground electrode is And a step of electrically connecting a short-circuit lead piece extending to the outside of the chip to the fixing portion, and a step of sealing the short-circuit lead piece, the chip and the die stage in a package. A method for manufacturing a semiconductor device. 8. A method for manufacturing a semiconductor device, comprising: a step of welding a fixing portion connected to a die stage to a lead frame and fixing the die stage to the lead frame. A method of manufacturing a semiconductor device, comprising a step of spot welding with a metal having a higher resistivity than the fixing portion and the lead frame material being interposed between the frame and the frame. 9. A method for manufacturing a semiconductor device, comprising: a step of crimping a fixing portion connected to a die stage to a lead frame and fixing the die stage to the lead frame. A method of manufacturing a semiconductor device, characterized in that a metal softer than a material of the fixing portion and the lead frame is interposed between the frame and the frame, and pressure bonding is performed.