JPH10270164A - Method and apparatus for manufacturing organic electroluminescence element - Google Patents

Abstract

(57) [Summary] [Problem] To prevent inflow of evaporant between vapor deposition chambers,
This provides a method and an apparatus for manufacturing an organic EL element capable of ensuring excellent element performance. SOLUTION: An organic substance evaporation chamber 21 and a metal evaporation chamber 23 are provided.
And a plurality of vacuum chambers 3 including
In a method of manufacturing an organic EL device in which an organic material layer and an electrode are formed on a substrate 15 while transporting the substrate 15 to 4, 21, 22, 23, 54, a vacuum chamber in which the substrate 15 is disposed and a vacuum chamber adjacent to the vacuum chamber are disposed. The substrate 15 is transferred to an adjacent vacuum chamber with the pressure difference being 5 × 10 ⁻⁴ Pa or less. Thereby, when the substrate 15 is conveyed, the pressure of the two chambers reaches an equilibrium state without the vaporized substances and impurities flowing into each other, so that the contamination of the film by the vaporized substances and impurities in other vacuum chambers can be prevented. Can be secured.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an organic electroluminescence device and an apparatus for manufacturing the same.

[0002]

2. Description of the Related Art In recent years, an organic electroluminescence element (hereinafter, referred to as an organic EL element), which is a light emitting device including an organic material layer, has been attracting attention, and research is proceeding toward use for a display or the like. An organic EL device generally includes a transparent electrode (anode), an organic layer such as a light emitting layer,
And a structure in which a counter electrode (cathode) is laminated, and each of these layers is formed on a substrate by a vacuum evaporation method.
The substrate used for the organic EL element has an ITO surface on the surface.
It is often supplied in a state where a transparent electrode such as a film is formed.

In order to continuously manufacture such an organic EL element, a manufacturing apparatus is used in which an organic substance deposition chamber for depositing an organic substance and a metal deposition chamber for depositing a metal are connected via a valve. I have. In this apparatus, an organic layer is deposited on a transparent electrode of a substrate in an organic deposition chamber, a valve is opened, the substrate is transferred from the organic deposition chamber to the metal deposition chamber, and a metal is deposited on the organic layer in the metal deposition chamber. A counter electrode was formed.

[0004]

In this method, a valve is opened to transfer the substrate to connect the organic vapor deposition chamber and the metal vapor deposition chamber, so that the evaporation and impurities in the organic vapor deposition chamber flow into the metal vapor deposition chamber. In some cases, evaporates and the like in the metal evaporation chamber flow into the organic evaporation chamber. For this reason, at the time of vapor deposition in each vapor deposition chamber, there is a possibility that the inflow material and the like of the other vaporization chambers adhere to the film and the quality of the organic EL element deteriorates. In particular, since a large amount of degas is generated by heating the metal in the metal vapor deposition chamber, it is easy for the degas and the evaporated matter of the metal to flow into the organic vapor deposition chamber and be mixed into the organic substance layer.

An object of the present invention is to provide a method of manufacturing an organic EL device and an apparatus for manufacturing the same, which can prevent inflow of evaporant between vapor deposition chambers, thereby ensuring excellent device performance.

[0006]

SUMMARY OF THE INVENTION The present invention aims at preventing the inflow of evaporated substances by reducing the pressure difference between the respective vapor deposition chambers. Specifically, the present invention includes an organic material vapor deposition chamber for vapor deposition of an organic material layer and a metal vapor deposition chamber for vapor deposition of electrodes, and transports the substrate to a plurality of vacuum chambers communicably connected to each other. A method for manufacturing an organic electroluminescent element in which an organic material layer and an electrode are sequentially formed, wherein a pressure difference between a vacuum chamber in which a substrate is arranged and a vacuum chamber adjacent to the vacuum chamber is 5 × 10 ⁻⁴ Pa or less. And transporting the substrate to an adjacent vacuum chamber.

In the present invention, the substrate is transferred to the adjacent vacuum chamber in a state where the pressure difference between the vacuum chamber in which the substrate is arranged and the vacuum chamber adjacent to the vacuum chamber is 5 × 10 ⁻⁴ Pa or less. Even when these vacuum chambers are communicated with each other at the time of transfer, the equilibrium state is reached with little evaporation or impurities in each vacuum chamber flowing into each other. Therefore, during evaporation in the organic vapor deposition chamber and the metal vapor deposition chamber, evaporated substances and impurities in other vacuum chambers do not enter the film or adhere to the surface (interface) of the film. Since a high film can be formed, excellent element performance can be secured. In addition, since the deposition of each layer is usually performed at a pressure of 5 × 10 ⁻⁴ Pa or less, the pressure difference can be reduced to 5 × 10 ⁻⁴ or less by reducing the pressure in a vacuum chamber adjacent to the deposition chamber to a normal pressure or less. .

When the organic vapor deposition chamber and the metal vapor deposition chamber are communicated with each other via a transfer path, the pressure difference between the organic vapor deposition chamber and the metal vapor deposition chamber is reduced by 5 × 1 with the transfer path being shut off.
After reducing the pressure to 0 ^-4 Pa or less, it is desirable to transfer the substrate from the organic substance deposition chamber to the metal deposition chamber through a transfer path.

With this configuration, even if degassing occurs in the metal deposition chamber due to heating of the metal and the pressure of the metal deposition chamber becomes higher than that of the organic deposition chamber, the pressure difference between the organic deposition chamber and the metal deposition chamber is reduced by 5 ×. Since the substrate is transported after the pressure is reduced to 10 ⁻⁴ Pa or less, degassing in the metal deposition chamber and evaporation of metal do not flow into the organic deposition chamber when the substrate is transported. Can be reliably prevented.

Alternatively, when the plurality of vacuum chambers include a transfer chamber provided between the organic deposition chamber and the metal deposition chamber, after the pressure difference between the organic deposition chamber and the transfer chamber is reduced to 5 × 10 ⁻⁴ Pa or less, It is desirable that the substrate be transported from the organic deposition chamber to the transfer chamber, the pressure difference between the transport chamber and the metal deposition chamber be reduced to 5 × 10 ⁻⁴ Pa or less, and then the substrate be transported from the transport chamber to the metal deposition chamber.

[0011] In this case, since the inflow of vaporized substances and the like can be prevented from flowing into the organic substance deposition chamber, the transfer chamber, the transfer chamber, and the metal deposition chamber, contamination of each chamber can be reduced. Also, even if the evaporant or the like flows out of the organic substance evaporation chamber or the metal evaporation chamber, it flows into the transfer chamber and does not directly flow into the other evaporation chamber. Mixing into the film at the time of vapor deposition can be prevented more reliably.

On the other hand, the apparatus for manufacturing an organic electroluminescence element of the present invention comprises an organic deposition chamber for depositing an organic layer on a substrate, and a transfer connected to the organic deposition chamber via first opening / closing means. Chamber, a metal vapor deposition chamber communicably connected to the transfer chamber via a second opening / closing means, and for vapor deposition of an electrode on the substrate; a pressure difference between the organic substance vapor deposition chamber and the transfer chamber; and a transfer chamber and a metal vapor deposition chamber. And pressure adjusting means for ^reducing the pressure difference between the pressure and the pressure to 5 × 10 ⁻⁴ Pa or less, respectively.

In the present invention, when a substrate is transported between the organic deposition chamber and the transfer chamber, or when the substrate is transported between the transfer chamber and the metal deposition chamber, the pressure adjusting means is used.
Since the pressure difference between the organic material deposition chamber and the transfer chamber and the pressure difference between the transfer chamber and the metal deposition chamber can each be reduced to 5 × 10 ⁻⁴ Pa or less, even if the first and second opening / closing means allow the respective chambers to communicate with each other. In each chamber, an equilibrium state is reached with little inflow of evaporates and impurities. Therefore, during the vapor deposition in each vapor deposition chamber, evaporated substances and the like in other vapor deposition chambers do not mix into the film, and a film with high purity can be formed in each vacuum chamber, so that excellent element performance can be secured.

The above-described pressure adjusting means includes an organic substance deposition chamber,
It is desirable to include exhaust means for exhausting the transfer chamber and the metal deposition chamber. By doing so, the pressure difference is reduced by evacuating each chamber, so that the pressure in each vapor deposition chamber can be kept relatively low. The pressure can be easily adjusted to a pressure suitable for film formation.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION

[First Embodiment] Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. FIG. 1 shows an organic EL device 1 of the present embodiment. The element 1 includes a substrate 11, a transparent electrode (anode) 12 made of an ITO film formed on the substrate 11, a light emitting layer 13 as an organic material layer formed on the transparent electrode 12, and And a counter electrode (cathode) 14 formed on the light emitting layer 13.

Such an organic EL device 1 is manufactured using a manufacturing apparatus 2 as shown in FIG. The organic EL device manufacturing apparatus 2 of the present embodiment is an apparatus for forming a film on the electrode-attached substrate 15 (see FIG. 1) having the transparent electrode 12 formed on the surface of the substrate 11, and does not include an anode forming apparatus. . The apparatus 2 includes an organic substance deposition chamber 21, a transfer chamber 22 connected to the organic substance deposition chamber 21, a metal deposition chamber 23 connected to the transfer chamber 22, an organic substance deposition chamber 21 and a transfer chamber 22.
, And pressure adjusting means 33, 43, 53 for reducing the pressure difference between the transfer chamber 22 and the metal deposition chamber 23 to 5 × 10 ⁻⁴ Pa or less, respectively.

The organic substance deposition chamber 21 is provided on the substrate 15 with electrodes.
Specifically, this is a vacuum chamber in which the light emitting layer 13 is deposited on the transparent electrode 12 (see FIG. 1), and a substrate holder 31 for holding the electrode-attached substrate 15 and a vapor deposition material forming the light emitting layer 13 are heated. And a vapor deposition source 32 for evaporating. The vapor deposition source 32 is a resistance heating type vapor deposition source for evaporating a vapor deposition material in a crucible 321, and has a shutter 322 above the crucible 321 to shut off evaporant. Further, the organic substance deposition chamber 21 has an exhaust unit 33 as a pressure adjusting unit for exhausting the room, and the exhaust unit 33 is
It is constituted by a vacuum exhaust system including a vacuum pump.

The organic vapor deposition chamber 21 is provided with a load lock chamber 34 which is a vacuum chamber provided with an exhaust means (not shown) as a pressure adjusting means. Load lock room 3
The organic vapor deposition chamber 21 is open to the atmosphere by loading the substrate 15 into the organic vapor deposition chamber 21 via the load lock chamber 34. Substrate 1 without electrode
5 can be loaded. Load lock room 3
Reference numeral 4 denotes a substrate holder 36 for holding the substrate 15 with electrodes and a carry-in port 37 for carrying the substrate 15 with electrodes into the chamber 34.
The carry-in port 37 is provided with a valve 38 for opening and closing.

The organic vapor deposition chamber 21 communicates with the transfer chamber 22 through a first valve 24 which is a first opening / closing means. By closing the first valve 24, the organic vapor deposition chamber 21 and the transfer chamber 22 can be shut off. It has become. Transfer room 22
Is a vacuum chamber for holding the substrate 15 with electrodes,
Substrate holder 31 and evacuation means 33 of organic substance deposition chamber 21
And a gas exhaust unit 43 as a pressure adjusting unit.

The transfer chamber 22 communicates with a metal deposition chamber 23 via a second valve 25 serving as a second opening / closing means. By closing the second valve 25, the transfer chamber 22 and the metal deposition chamber 23 can be shut off. It has become. The metal deposition chamber 23 is provided on the substrate 15 with electrodes, specifically, the light emitting layer 13.
A vacuum chamber for vapor-depositing the counter electrode 14 thereon (see FIG. 1). The vacuum chamber includes a substrate holder 51 and a vapor source 52 for heating and evaporating the metal constituting the counter electrode 14. The vapor deposition source 52 is a resistance heating type vapor deposition source for evaporating metal in a crucible 521, and includes a shutter 522 above the crucible 521. The metal vapor deposition chamber 23 is also provided with an exhaust means 5 as a pressure adjusting means similarly to the organic substance vapor deposition chamber 21.
3 is provided.

The metal deposition chamber 23 is provided with a load lock chamber 54 as a vacuum chamber having an exhaust means (not shown) as a pressure adjusting means. The load lock chamber 54 and the metal deposition chamber 23 are communicably connected to each other via a valve 55, so that the substrate 15 with electrodes can be carried out without opening the metal deposition chamber 23 to the atmosphere. I have. The load lock chamber 54 includes a substrate holder 56.
And an outlet 57 for unloading the electrode-attached substrate 15 from the chamber 54. The outlet 57 is provided with a valve 5 for opening and closing.
8 are provided.

In such an apparatus 2, each of the chambers 21, 22, 22
Each of the transfer systems 26 (the transfer chamber 22)
And the transport systems of the load lock chambers 34 and 54 are not shown).
The substrate 15 with electrodes is transferred without opening the 4, 21, 22, 23, 54 to the atmosphere and the chambers 21, 22, 23, 3
4, 54 can be set on the substrate holders 36, 31, 41, 51, 56. The transfer system 26
May be, for example, a belt type or a tray type, or may be a robot provided with an arm for holding and moving the substrate 15 with electrodes.

Next, a method for manufacturing the organic EL element 1 using the manufacturing apparatus 2 of the present embodiment will be described. In the present embodiment, the substrate 15 with electrodes is divided into the chambers 34, 21, 22, 2, and 2.
3 and 54, the light emitting layer 13 and the counter electrode 1 in the organic deposition chamber 21 and the metal deposition chamber 23, respectively.
4 is formed. That is, an electrode-attached substrate 15 in which the transparent electrode 12 is formed on the substrate 11 is prepared, and the electrode-attached substrate 15 is prepared.
Is previously cleaned by ultrasonic cleaning, UV ozone cleaning, or the like. Further, the organic material evaporation chamber 21, the transfer chamber 22, the metal evaporation chamber 23, and the load lock chamber 54 are connected to the respective exhaust means 33,
Air is exhausted until a predetermined pressure is reached by 43 and 53.
When the pressures in the organic vapor deposition chamber 21 and the metal vapor deposition chamber 23 reach a predetermined pressure, the vaporization sources 32 and 52 are heated to control the heating state so that a predetermined film forming rate is obtained. The heating of the evaporation sources 32 and 52 is performed by the shutters 32 and
2, 522 is closed.

Next, the valve 38 of the load lock chamber 34
Is opened, the cleaned substrate 15 with electrodes is carried into the load lock chamber 34 from the carry-in port 37, attached to the substrate holder 36, and the valve 38 is closed. Thereafter, the load lock chamber 34 is evacuated by a not-shown exhaust means until the pressure difference between the load lock chamber 34 and the organic substance deposition chamber 21 becomes 5 × 10 ⁻⁴ Pa or less.

Subsequently, the valve 35 between the load lock chamber 34 and the organic substance deposition chamber 21 is opened. Then, each room 34,
Since the pressure difference between the two chambers 21 is set to 5 × 10 ⁻⁴ Pa or less, the pressure in the two chambers 34 and 21 is in an equilibrium state with almost no evaporant and impurities in each of the chambers 34 and 21 flowing into each other. Thereafter, the transfer system 26 in each of the chambers 34 and 21 provides
The substrate 15 with electrodes is transported from the load lock chamber 34 into the organic vapor deposition chamber 21, and is held by the substrate holder 31 with the transparent electrode 12 (see FIG. 1) side facing the vapor deposition source 32. After the substrate 15 is set, the valve 35 is closed to close the organic substance deposition chamber 21, the pressure in the chamber 21 is adjusted to a pressure suitable for film formation, and then the shutter 322 is opened to release the substrate 15. The light emitting layer 13 is deposited on the transparent electrode 12. When a predetermined film thickness is obtained, the shutter 322 is closed again to terminate the film formation.

Thereafter, the organic substance deposition chamber 21 and the transfer chamber 2
The pressure difference of 2 is corrected to 5 × 10 ⁻⁴ Pa or less. Specifically, when the pressure of the organic substance deposition chamber 21 is higher than that of the transfer chamber 22, the pressure of the organic substance deposition chamber 21 is reduced by the exhaust unit 33. Alternatively, when the transfer chamber 22 has a higher pressure than the organic substance deposition chamber 21,
Thereby, the pressure in the transfer chamber 22 is reduced.

Then, the organic substance deposition chamber 21 and the transfer chamber 2
The first valve 24 is opened in a state where the pressure difference of No. 2 is 5 × 10 ⁻⁴ Pa or less. Then, the evaporants and impurities in each of the chambers 21 and 22 hardly flow into each other and the two chambers 21 and 22
Pressure reaches equilibrium. Subsequently, the substrate with electrodes 15 is moved by the transfer system 26 in each of the chambers 21 and 22 to the organic substance evaporation chamber 21.
Is transferred to the transfer chamber 22, and is held by the substrate holder 41, and the first valve 24 is closed.

After that, the pressure difference between the transfer chamber 22 and the metal deposition chamber 23 is reduced to 5 × 10 by using the exhaust means 43 and 53 in the same manner as when the pressure difference between the organic deposition chamber 21 and the transfer chamber 22 is corrected. ^-4 Pa or less.

Next, the transfer chamber 22 and the metal deposition chamber 23
The second valve 2 with a pressure difference of 5 × 10 ⁻⁴ Pa or less
Open 5 Then, the pressure in the two chambers 22 and 23 reaches an equilibrium state with almost no evaporant and impurities in the chambers 22 and 23 flowing into each other. Subsequently, the substrate with electrodes 15 is transferred from the transfer chamber 22 to the metal deposition chamber 23 by the transfer system 26 of each of the chambers 22 and 23 and held by the substrate holder 51, and the second valve 25 is closed to close the metal deposition chamber 23. Seal tightly. Thereafter, the pressure in the metal deposition chamber 23 is adjusted to a pressure suitable for film formation, the shutter 522 is opened, and metal is deposited on the light emitting layer 13 of the substrate 15 to form the counter electrode 14. When a predetermined film thickness is obtained, the shutter 522 is closed again to terminate the film formation.

Next, similarly to the case where the pressure difference between the organic substance deposition chamber 21 and the transfer chamber 22 is corrected, the exhaust means 53 and the exhaust means of the load lock chamber 54 (not shown).
To make the pressure difference between the metal deposition chamber 23 and the load lock chamber 54 5 × 10 ⁻⁴ Pa or less. Subsequently, the valve 55 between the metal deposition chamber 23 and the load lock chamber 54 is opened. Then, the pressures in the two chambers 23 and 54 reach an equilibrium state with almost no evaporant and impurities in the chambers 23 and 54 flowing into each other. And the transport system 26 of each chamber 23, 54
Thus, the substrate with electrodes 15 is transferred from the metal deposition chamber 23 to the load lock chamber 54 and held by the substrate holder 56, and the valve 55 is closed. Thereafter, the valve 58 of the load lock chamber 54 is opened, and the substrate 15 on which the light emitting layer 13 and the counter electrode 14 are formed, that is, the organic EL element 1 is taken out from the carry-out port 57.

According to this embodiment, the following effects can be obtained. That is, the pressure difference between the load lock chamber 34 and the organic deposition chamber 21, the pressure difference between the organic deposition chamber 21 and the transfer chamber 22, the transfer chamber 22 and the metal deposition chamber 2
3, the metal deposition chamber 23 and the load lock chamber 5
The pressure difference between the 4, at 5 × 10 ^-4 Pa or less each state, each chamber of the electrode with the substrate 15 34,21,22,23,5
Since the transfer between the vacuum chambers 34, 21, 22, 23, and 54 is carried out when the substrate 15 is transferred, even if the vacuum chambers 34, 21, 22, 23, and 54 communicate with each other, the vaporized material in each of the vacuum chambers 34, 21, 22, 23, and 54 is removed. Equilibrium is reached with almost no impurities flowing into each other. Therefore, the organic substance deposition chamber 21 and the metal deposition chamber 2
3 can be prevented from flowing into the evaporation chambers 23, 21 and impurities in the load lock chambers 34, 54 and the transfer chamber 22. Evaporates and impurities in the vacuum chamber are not mixed into the film, and a high-purity film can be formed in each of the vapor deposition chambers 21 and 23. Therefore, excellent element performance can be secured.

In particular, the organic substance deposition chamber 21 and the transfer chamber 2
After the pressure difference between the two below 5 × 10 ^-4 Pa, and conveyed to the transfer chamber 22 the substrate 15 from the organic vapor deposition chamber 21, transfer chamber 22
After the pressure difference between the metal vapor deposition chamber 23 and the metal vapor deposition chamber 23 is reduced to 5 × 10 ⁻⁴ Pa or less, the substrate 15 is transported from the transport chamber 22 to the metal vapor deposition chamber 23. Therefore, the organic substance vapor deposition chamber 21 and the transport chamber 22, the transport chamber 22, and the metal In the vapor deposition chamber 23, it is possible to prevent the inflow of the evaporated substances and impurities from each other.
3 can be reduced. Also, even if the evaporant flows out of the organic evaporation chamber 21 or the metal evaporation chamber 23, the transfer chamber 2
2 and does not directly flow into the vapor deposition chambers 23 and 21, so that the contamination due to the evaporate that has flowed out can be more reliably prevented.

In addition, degassing in the metal deposition chamber 23 generated by heating of the metal and evaporation of the metal do not flow into the organic deposition chamber 21 when the substrate 15 with electrodes is conveyed. Mixing into the layer 13 can be reliably prevented.

Further, in the manufacturing apparatus 2 of this embodiment, the exhaust means 3 is provided in each of the chambers 34, 21, 22, 23 and 54, respectively.
3, 43, 53 are provided, so that each room 34, 2
Ensure that the pressure difference between 1, 22, 23 and 54 is 5 × 1
It can be 0 ^-4 Pa or less.

Further, the pressure adjusting means is replaced by the exhaust means 33, 4
Since the pressure chambers 3 and 53 are used, the pressure difference between the two chambers can be reduced by exhausting one of the two chambers for transporting the substrate 15 which has a high pressure. Therefore, by correcting the pressure difference, the pressures in the organic vapor deposition chamber 21 and the metal vapor deposition chamber 23 can be maintained at relatively low pressures. 14 can be easily adjusted to a pressure suitable for film formation.

[Second Embodiment] A manufacturing apparatus 3 for an organic EL device 1 according to the present embodiment shown in FIG. 3 omits the transfer chamber 22 as a vacuum chamber of the first embodiment. The same portions are denoted by the same reference numerals, and detailed description thereof will be omitted. Only different portions will be described below in detail. The organic vapor deposition chamber 21 and the metal vapor deposition chamber 23 of the manufacturing apparatus 3 according to the present embodiment communicate with each other via a transfer path 27. An opening / closing valve 28 is provided at an intermediate portion of the transfer path 27.
By closing, the organic substance vapor deposition chamber 21 and the metal vapor deposition chamber 23 can be shut off.

In the device 3 of this embodiment, the open / close valve 28
The light emitting layer 13 is vapor-deposited on the electrode-attached substrate 15 in the same manner as in the first embodiment in a state where is closed and the transfer path 27 is shut off. Thereafter, the exhaust means 33, 53 of each of the vapor deposition chambers 21, 23 are provided.
Thus, the pressure difference between the organic vapor deposition chamber 21 and the metal vapor deposition chamber 23 is corrected to 5 × 10 ⁻⁴ Pa or less. Specifically, when the pressure in the organic vapor deposition chamber 21 is higher than that in the metal vapor deposition chamber 23, the pressure in the organic vapor deposition chamber 21 is reduced by the exhaust unit 33. Alternatively, when the pressure of the metal deposition chamber 23 is higher than that of the organic deposition chamber 21, the pressure of the metal deposition chamber 23 is reduced by the exhaust unit 53.

When the pressure difference between the vapor deposition chambers 21 and 23 is 5 × 10 ⁻⁴ Pa or less, the open / close valve 28 is opened to communicate the organic vapor deposition chamber 21 and the metal vapor deposition chamber 23. Then, the pressure in each of the chambers 21 and 23 reaches an equilibrium state with almost no evaporant and impurities in the evaporation chambers 21 and 23 flowing into each other. Subsequently, the substrates 15 with electrodes are moved by the respective vapor deposition chambers 21 and 23 to the organic vapor deposition chamber 21.
Is transferred to the metal deposition chamber 23 through the transfer path 27 and set on the substrate holder 51. Then, the organic EL element 1 is obtained by forming the counter electrode 14 in the same manner as in the first embodiment. According to this embodiment, the same operation and effect as those of the first embodiment can be obtained.

It should be noted that the present invention is not limited to the above embodiments, but includes other configurations that can achieve the object of the present invention, and also includes the following modifications. That is, in each of the above-described embodiments, the vapor deposition sources 32 and 52 are heated before the substrate with electrodes 15 is carried into each of the vapor deposition chambers 21 and 23.
2, 52 may be heated. Further, the present invention is not limited to the organic EL element 1 having the structure of each of the above embodiments.
An organic EL device having a structure in which a hole injection layer as an organic material layer is interposed between a transparent electrode and a light emitting layer, or an organic EL device in which an electron injection layer as an organic material layer is interposed between a light emitting layer and a counter electrode. It can be applied to various organic EL devices such as devices.

[0040]

As described above, according to the method of the present invention, the pressure difference between the vacuum chamber in which the substrate is disposed and the vacuum chamber adjacent to the vacuum chamber is 5 × 10 ⁻⁴ Pa or less. Since the substrates are transferred to adjacent vacuum chambers, even when these vacuum chambers are connected to each other when transferring the substrates, the pressure in the two chambers is in an equilibrium state with little evaporation or impurities in each vacuum chamber flowing into each other. Reach. Therefore, during evaporation in the organic vapor deposition chamber and the metal vapor deposition chamber, evaporated materials and impurities in other vacuum chambers do not enter the film, and a film with high purity can be formed in each vapor deposition chamber, so that excellent element performance can be obtained. Can be secured.

Further, according to the apparatus of the present invention, the pressure difference between the organic vapor deposition chamber and the transfer chamber and the pressure differential between the transport chamber and the metal vapor deposition chamber are each 5 × 10 ⁻⁴ Pa or less. When the substrate is transferred between the organic deposition chamber and the transfer chamber, or when the substrate is transported between the transfer chamber and the metal deposition chamber, the pressure between the organic deposition chamber and the transfer chamber is controlled by the pressure adjusting means. Since the difference and the pressure difference between the transfer chamber and the metal deposition chamber can be reduced to 5 × 10 ⁻⁴ Pa or less, even when the chambers are connected, the chambers are in an equilibrium state with almost no evaporant flowing into each other. Therefore, during the vapor deposition in each vapor deposition chamber, evaporated substances from other vapor deposition chambers do not enter the film as impurities, and a film with high purity can be formed in each vacuum chamber, so that excellent element performance can be secured.

[Brief description of the drawings]

FIG. 1 is a sectional view showing an organic EL device according to a first embodiment of the present invention.

FIG. 2 is a schematic view showing an apparatus for manufacturing an organic EL device according to the first embodiment.

FIG. 3 is a schematic view showing an apparatus for manufacturing an organic EL device according to a second embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Organic electroluminescent element 2, 3 Manufacturing apparatus of organic electroluminescent element 11 Substrate 12 Transparent electrode 13 Light emitting layer (organic layer) 14 Counter electrode 15 Substrate with electrode 21 Organic substance vapor deposition chamber (vacuum chamber) 22 Transfer chamber (vacuum chamber) 23 Metal deposition chamber (vacuum chamber) 24 First valve (first opening / closing means) 25 Second valve (second opening / closing means) 27 Transfer path 33, 43, 53 Exhaust means (pressure adjusting means) 34, 54 Load lock chamber (vacuum) Room)

Claims (5)

[Claims] An organic layer and an organic layer are provided on a substrate while transporting the substrate to a plurality of vacuum chambers including an organic substance vapor deposition chamber for vapor deposition of an organic substance layer and a metal vapor deposition chamber for vapor deposition of electrodes and connected to each other. A method for manufacturing an organic electroluminescent element, in which electrodes are sequentially formed, wherein a pressure difference between a vacuum chamber in which the substrate is arranged and a vacuum chamber adjacent to the vacuum chamber is 5 × 10 ⁻⁴ Pa or less. A method for manufacturing an organic electroluminescence device, comprising transferring a substrate to the adjacent vacuum chamber. 2. The method of manufacturing an organic electroluminescence device according to claim 1, wherein the organic deposition chamber and the metal deposition chamber are communicated via a transfer path, and the organic deposition chamber and the metal deposition chamber are connected in a state where the transfer path is blocked. A method for manufacturing an organic electroluminescent device, comprising: transferring the substrate from the organic deposition chamber to the metal deposition chamber through the transfer path after reducing the pressure difference in the metal deposition chamber to 5 × 10 ⁻⁴ Pa or less. 3. The method for manufacturing an organic electroluminescence device according to claim 1, wherein the plurality of vacuum chambers include a transfer chamber provided between the organic deposition chamber and a metal deposition chamber. And the transfer chamber pressure difference is 5 × 10 ^-4 P
a, the substrate is transferred from the organic deposition chamber to the transfer chamber, and the pressure difference between the transfer chamber and the metal deposition chamber is 5 × 10 ⁻⁴ Pa
A method for manufacturing an organic electroluminescence device, comprising: transporting the substrate from the transfer chamber to the metal deposition chamber after the following. 4. An organic substance deposition chamber for depositing an organic substance layer on a substrate, a transfer chamber communicably connected to the organic substance deposition chamber via a first opening / closing means, and a second opening / closing means in the transfer chamber. A metal vapor deposition chamber that is connected to communicate with each other and vapor-deposits an electrode on the substrate; a pressure difference between the organic substance vapor deposition chamber and the transfer chamber; and a pressure difference between the transport chamber and the metal vapor deposition chamber, each of which is 5 ×. An apparatus for producing an organic electroluminescence device, comprising: a pressure adjusting means for reducing the pressure to 10 ⁻⁴ Pa or less. 5. The apparatus for manufacturing an organic electroluminescence device according to claim 4, wherein the pressure adjusting unit includes an exhaust unit that exhausts the organic deposition chamber, the transfer chamber, and the metal deposition chamber. Manufacturing equipment for organic electroluminescent elements.