JPH10256242A - Method for cleaning passage and vaporizer - Google Patents
Method for cleaning passage and vaporizerInfo
- Publication number
- JPH10256242A JPH10256242A JP1330998A JP1330998A JPH10256242A JP H10256242 A JPH10256242 A JP H10256242A JP 1330998 A JP1330998 A JP 1330998A JP 1330998 A JP1330998 A JP 1330998A JP H10256242 A JPH10256242 A JP H10256242A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- vaporizer
- liquid
- flow path
- cleaning liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 147
- 239000006200 vaporizer Substances 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims description 19
- 239000007788 liquid Substances 0.000 claims abstract description 89
- 239000011344 liquid material Substances 0.000 claims abstract description 10
- 239000007787 solid Substances 0.000 claims abstract description 8
- 238000000638 solvent extraction Methods 0.000 claims abstract 2
- 230000008016 vaporization Effects 0.000 claims description 25
- 238000009834 vaporization Methods 0.000 claims description 17
- 239000002994 raw material Substances 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000001816 cooling Methods 0.000 claims description 6
- 239000002244 precipitate Substances 0.000 claims 1
- 239000011364 vaporized material Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 17
- 239000010408 film Substances 0.000 description 9
- 238000005406 washing Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- 239000002904 solvent Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、気化器の洗浄方法
及びその装置に係り、特に、チタン酸バリウム/ストロ
ンチウム等の高誘電体又は強誘電体薄膜を形成する薄膜
気相成長装置に気化原料を供給するために使用される気
化器の内部を洗浄するのに使用して好適な気化器の洗浄
方法及び気化装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for cleaning a vaporizer, and more particularly, to a vapor deposition apparatus for forming a high-dielectric or ferroelectric thin film such as barium / strontium titanate. TECHNICAL FIELD The present invention relates to a vaporizer cleaning method and a vaporizer suitable for cleaning the inside of a vaporizer used for supplying a gas.
【0002】[0002]
【従来の技術】近年、半導体産業における集積回路の集
積度の向上はめざましく、現状のメガビットオーダか
ら、将来のギガビットオーダを睨んだDRAMの研究開
発が行われている。かかるDRAMの製造のためには、
小さな面積で大容量が得られるキャパシタ素子が必要で
ある。このような大容量素子の製造に用いる誘電体薄膜
として、誘電率が10以下であるシリコン酸化膜やシリ
コン窒化膜に替えて、誘電率が20程度である五酸化タ
ンタル(Ta2O5) 薄膜、あるいは誘電率が300程度で
あるチタン酸バリウム(BaTiO3 ) 、チタン酸ストロ
ンチウム(SrTiO3)又はこれらの混合物であるチタン
酸バリウムストロンチウム等の金属酸化物薄膜材料が有
望視されている。また、さらに誘電率が高いPZT、P
LZT、Y1等の強誘電体の薄膜材料も有望視されてい
る。2. Description of the Related Art In recent years, the degree of integration of integrated circuits in the semiconductor industry has been remarkably improved, and research and development of DRAMs from the current megabit order to the future gigabit order have been conducted. To manufacture such a DRAM,
A capacitor element that can obtain a large capacity with a small area is required. A tantalum pentoxide (Ta 2 O 5 ) thin film having a dielectric constant of about 20, instead of a silicon oxide film or a silicon nitride film having a dielectric constant of 10 or less, as a dielectric thin film used for manufacturing such a large capacity element. Metal oxide thin film materials such as barium titanate (BaTiO 3 ) having a dielectric constant of about 300, strontium titanate (SrTiO 3 ), or a mixture thereof, such as barium strontium titanate, are promising. In addition, PZT, P
Ferroelectric thin film materials such as LZT and Y1 are also promising.
【0003】ところで、このような素材の成膜を行う方
法として、化学気相成長法(CVD)が有望とされてお
り、この場合、最終的に反応槽内で原料ガスを被成膜基
板に安定的に供給する必要がある。原料ガスは、常温で
固体のBa(DPM)2 、Sr(DPM)2 などを液状
化し、さらに気化特性を安定化させるために、例えば、
テトラヒドロフラン(THF)などの有機溶剤を混合し
たものを気化器で加熱して気化することによって生成さ
れる。As a method for forming such a material, chemical vapor deposition (CVD) is considered to be promising. In this case, a source gas is finally deposited on a substrate to be formed in a reaction tank. Stable supply is required. The raw material gas liquefies solid Ba (DPM) 2 , Sr (DPM) 2 and the like at room temperature, and further stabilizes the vaporization characteristics.
It is produced by heating a mixture of organic solvents such as tetrahydrofuran (THF) with a vaporizer and vaporizing the mixture.
【0004】この種の気化器においては、気化器で液体
(液体原料)を気化する際に、前記金属との化合物、例
えばSrCO3 や原料有機金属が分解した中間生成物等
が生成され、これが固化して気化器の内部に堆積した
り、未気化成分が固体、或いは液状流動体として気化器
内部に残留してしまうことがある。そして、このように
堆積物や残留物が生じると、気化器内部の通路を塞いだ
り、濃度変化による品質の悪化を招くおそれがある。In this type of vaporizer, when a liquid (liquid raw material) is vaporized by the vaporizer, a compound with the metal, for example, SrCO 3 or an intermediate product obtained by decomposing the raw material organic metal is generated. It may be solidified and deposited inside the vaporizer, or unvaporized components may remain inside the vaporizer as a solid or liquid fluid. If such deposits or residues are generated, the passage inside the vaporizer may be blocked, or the quality may be deteriorated due to a change in concentration.
【0005】このため、気化器の内部を、必要に応じ
て、或いは定期的に洗浄する必要があるが、従来、この
種の洗浄は、気化器の内部に溶剤(洗浄液)を流すこと
によって一般に行われていた。For this reason, it is necessary to clean the interior of the vaporizer as needed or periodically. Conventionally, this type of cleaning is generally performed by flowing a solvent (cleaning liquid) into the interior of the vaporizer. It was done.
【0006】[0006]
【発明が解決しようとする課題】しかしながら、気化器
の内部は通常高温でかつ低圧力であるため、溶剤が気化
器内部で気化してしまい、溶剤が付着物(汚れ)を溶解
して同伴する力が低下するので、洗浄能力を失ってしま
うという問題があった。また、気化器の圧力を上昇させ
るために成膜室を含む全体の系の真空度を低下させる
と、洗浄後の立ち上げに時間が掛かるという不具合が有
る。However, since the inside of the vaporizer is usually at high temperature and low pressure, the solvent is vaporized inside the vaporizer, and the solvent dissolves and accompanies the deposits (dirt). Since the power is reduced, there is a problem that the cleaning ability is lost. Further, if the degree of vacuum of the entire system including the film forming chamber is reduced in order to increase the pressure of the vaporizer, there is a problem that it takes time to start up after cleaning.
【0007】この発明は上記の課題に鑑みて為されたも
ので、真空処理装置の全体の真空度を下げることなく、
気化器の内部を短時間で確実に洗浄することができる気
化器の洗浄方法及び気化装置を提供することを目的とす
る。[0007] The present invention has been made in view of the above problems, without reducing the degree of vacuum of the entire vacuum processing apparatus,
An object of the present invention is to provide a vaporizer cleaning method and a vaporizer capable of reliably cleaning the inside of a vaporizer in a short time.
【0008】[0008]
【課題を解決するための手段】請求項1に記載の発明
は、固形物を析出しやすい成分を有するガスを流すため
の流路を洗浄する方法において、前記流路の少なくとも
一部を区画して所定の耐圧を有する洗浄液領域を構成す
る工程と、洗浄液を該洗浄液が前記洗浄領域における洗
浄温度において液状で存在するような洗浄圧力に加圧し
ながら流入させる工程とを有することを特徴とする流路
の洗浄方法である。According to a first aspect of the present invention, there is provided a method for cleaning a flow path for flowing a gas having a component which tends to precipitate a solid, wherein at least a part of the flow path is partitioned. Forming a cleaning liquid region having a predetermined pressure resistance by flowing the cleaning liquid into the cleaning region while applying a pressure to the cleaning pressure such that the cleaning liquid exists in a liquid state at the cleaning temperature in the cleaning region. This is a method for cleaning roads.
【0009】これにより、洗浄液を洗浄液領域に液体状
態で流入させ、この洗浄液によって付着物を溶解しある
いは洗い流すという洗浄能力を充分に発揮させて効率良
く洗浄を行なうことができる。[0009] Thus, the cleaning liquid is allowed to flow into the cleaning liquid region in a liquid state, and the cleaning ability of dissolving or washing away the deposits by the cleaning liquid can be sufficiently exhibited, and the cleaning can be efficiently performed.
【0010】請求項2に記載の発明は、固形物を析出し
やすい成分を有するガスを流すための流路を洗浄する方
法において、前記流路の少なくとも一部を区画して所定
の耐圧を有する洗浄液流路を構成する工程と、洗浄液を
該洗浄液が前記洗浄領域の洗浄温度において部分的に沸
騰するような洗浄圧力に加圧しながら流入させる工程と
を有することを特徴とする流路の洗浄方法である。According to a second aspect of the present invention, there is provided a method for cleaning a flow path for flowing a gas having a component which tends to precipitate a solid, wherein at least a part of the flow path is partitioned to have a predetermined pressure resistance. A method of forming a cleaning liquid flow path, and a step of flowing the cleaning liquid while pressurizing the cleaning liquid to a cleaning pressure at which the cleaning liquid partially boils at the cleaning temperature of the cleaning area. It is.
【0011】これにより、洗浄液を洗浄液領域に液体状
態で流入させた後に部分的に、特にその高温内壁部分で
沸騰させ、それによる洗浄液の撹拌を利用して付着物を
溶解しあるいは洗い流すという洗浄能力を充分に発揮さ
せて効率良く洗浄を行なうことができる。[0011] With this, the cleaning ability is such that after the cleaning liquid flows into the cleaning liquid region in a liquid state, the cleaning liquid is partially boiled, particularly at the high-temperature inner wall portion, and the attached substance is dissolved or washed away by utilizing the stirring of the cleaning liquid. And the washing can be efficiently performed.
【0012】前記洗浄液領域が液体原料を気化温度及び
気化圧力下で気体原料に気化させる気化領域を有し、前
記洗浄温度をほぼ前記気化温度であるようにしてもよ
い。これにより、洗浄工程を行っても気化領域の温度が
低下することが防止され、洗浄後の気化工程を迅速に開
始することができる。[0012] The cleaning liquid region may have a vaporizing region for vaporizing the liquid raw material into a gaseous raw material under a vaporizing temperature and a vaporizing pressure, and the cleaning temperature may be substantially equal to the vaporizing temperature. This prevents the temperature of the vaporization region from lowering even when the cleaning step is performed, and the vaporization step after cleaning can be started quickly.
【0013】前記洗浄温度を前記気化温度より低くする
ようにしてもよい。高温である程洗浄液を液体状態に維
持するのには高圧が必要となり、気化器自体が高圧容器
であることが必要となる。そこで、気化温度が高い場合
にはある程度温度を下げてから洗浄を行なうことで必要
な加圧を最小限にすることができる。[0013] The cleaning temperature may be lower than the vaporization temperature. The higher the temperature, the higher the pressure required to maintain the cleaning liquid in a liquid state, and the vaporizer itself must be a high-pressure container. Therefore, when the vaporization temperature is high, the necessary pressurization can be minimized by lowering the temperature to some extent and then performing cleaning.
【0014】前記洗浄液を事前に加熱してから流入させ
るようにしてもよい。これにより、例えば、洗浄液を洗
浄温度まで加熱しておけば、洗浄領域が洗浄液によって
熱を奪われて温度低下することが防止されるので、洗浄
後の気化工程を迅速に開始することができる。The cleaning solution may be heated beforehand and then flowed. Accordingly, for example, if the cleaning liquid is heated to the cleaning temperature, the cleaning area is prevented from being deprived of heat by the cleaning liquid and the temperature is prevented from lowering, so that the vaporization step after cleaning can be started quickly.
【0015】前記洗浄領域を負圧にして洗浄液の流入を
促進するようにしてもよい。前記洗浄領域を負圧にし洗
浄領域を洗浄液で充満させる工程を経て、次に洗浄液を
流す工程に入るようにしてもよい。前記洗浄領域を完全
に液充することにより全ての洗浄領域を洗浄液に接触さ
せることができ、洗浄効果を上昇させかつ洗いもれをな
くすことができる。The cleaning area may be set to a negative pressure to promote the flow of the cleaning liquid. After the step of applying a negative pressure to the cleaning area to fill the cleaning area with the cleaning liquid, a step of flowing the cleaning liquid may be performed. By completely filling the cleaning area with liquid, all the cleaning areas can be brought into contact with the cleaning liquid, thereby increasing the cleaning effect and eliminating the leakage.
【0016】請求項3に記載の発明は、所定の気化圧力
及び気化温度において液体原料流路から供給された液体
原料を気化して気化原料流路に送る気化器と、前記気化
器の少なくとも一部を含む洗浄領域に洗浄液を流入させ
る洗浄液供給手段と、前記洗浄領域に流入する前記洗浄
液を加圧する加圧手段を有することを特徴とする気化装
置である。According to a third aspect of the present invention, there is provided a vaporizer for vaporizing a liquid raw material supplied from a liquid raw material flow path at a predetermined vaporization pressure and a predetermined vaporization temperature and sending the liquid raw material to the vaporized raw material flow path, and at least one of the vaporizers. A cleaning liquid supply means for flowing the cleaning liquid into the cleaning area including the section, and a pressurizing means for pressurizing the cleaning liquid flowing into the cleaning area.
【0017】請求項4に記載の発明は、前記加圧手段は
前記洗浄液を前記洗浄温度におけるその蒸気圧以上に加
圧することができることを特徴とする請求項3に記載の
気化装置である。請求項5に記載の発明は、前記洗浄液
供給手段は、前記液体原料流路に合流し、前記気化原料
流路から分岐する洗浄流路を有することを特徴とする請
求項3に記載の気化装置である。According to a fourth aspect of the present invention, there is provided the vaporizer according to the third aspect, wherein the pressurizing means can pressurize the cleaning liquid to a pressure higher than its vapor pressure at the cleaning temperature. The invention according to claim 5 is characterized in that the cleaning liquid supply means has a cleaning flow path that joins the liquid raw material flow path and branches off from the vaporized raw material flow path. It is.
【0018】前記洗浄液の主な流れ方向を重力に対して
上から下に流すようにしてもよい。これにより、洗浄液
での不溶解物がある場合に洗浄域内に残留し、工程中に
パーティクル等になることを防止することができる。前
記洗浄流路内に前記洗浄液を加熱する加熱手段を設ける
ようにしてもよく、また、前記洗浄領域を冷却する冷却
手段を設けるようにしても良い。The main flow direction of the cleaning liquid may flow from top to bottom with respect to gravity. Accordingly, it is possible to prevent the insoluble matter in the cleaning liquid from remaining in the cleaning area and becoming particles or the like during the process. A heating unit for heating the cleaning liquid may be provided in the cleaning channel, and a cooling unit for cooling the cleaning region may be provided.
【0019】請求項6に記載の発明は、前記気化器に
は、加熱用及び冷却用の熱媒体を切換可能に流通させる
熱媒体流路が設けられていることを特徴とする請求項3
に記載の気化装置である。これにより、気化器を簡単な
構造で加熱又は冷却して温度制御し、気化又は洗浄動作
を効率的に行なう。熱媒体を加熱及び冷却時に共通とす
ることにより、切り換えて動作させても洗浄する必要が
ない。According to a sixth aspect of the present invention, the heat evaporator is provided with a heat medium flow path through which a heat medium for heating and a heat medium for cooling are switchably circulated.
4. The vaporizer according to claim 1. Thereby, the vaporizer is heated or cooled with a simple structure to control the temperature, and the vaporization or cleaning operation is performed efficiently. By using a common heat medium for heating and cooling, there is no need to perform cleaning even when the operation is switched.
【0020】[0020]
【発明の実施の形態】以下、本発明の実施の形態を図面
を参照して説明する。図1はこの発明の第1の実施の形
態の気化装置を示すもので、液体原料流路16aから供
給される液体原料を、ヒータ14により気化温度に加熱
して気化し、ガス流路16bを介して成膜室12に供給
する気化器10を備えている。成膜室12では、この気
化原料と図示しない配管からの酸素含有ガスとを所定の
反応温度に加熱した基板に噴射して、この基板上に金属
酸化物薄膜を気相成長させる。処理後の処理ガスは、ト
ラップ18を通過した後、排気ポンプ20から外部に排
気される。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a vaporizer according to a first embodiment of the present invention, in which a liquid material supplied from a liquid material flow path 16a is heated to a vaporization temperature by a heater 14 and vaporized, and a gas flow path 16b is formed. A vaporizer 10 for supplying the film to the film forming chamber 12 is provided. In the film forming chamber 12, the vaporized raw material and an oxygen-containing gas from a pipe (not shown) are jetted onto a substrate heated to a predetermined reaction temperature, and a metal oxide thin film is vapor-phase grown on the substrate. After passing through the trap 18, the processing gas after the processing is exhausted to the outside from the exhaust pump 20.
【0021】この気化装置には、気化器10の上流で液
体原料流路16aに合流し、気化器10の下流でガス流
路16bから分岐し、洗浄液タンク28、循環ポンプ3
2、フィルタ36を経由して循環する洗浄流路22が設
けられている。液体原料流路16aと洗浄流路22の合
流点の上流側の各流路には、開閉2位置をとる開閉弁2
4a,24bが、ガス流路16bと洗浄流路22の分岐
点の下流側の各流路には、同様な開閉弁24c,24d
がそれぞれ設けられている。これらの開閉弁によって囲
まれ、液体流路及びガス流路の一部及び気化器内部の流
路により構成される洗浄領域は、後述する洗浄圧力に耐
えられる耐圧性をゆうして形成されている。In this vaporizer, the liquid material flow path 16a is joined upstream of the vaporizer 10 and branched off from the gas flow path 16b downstream of the vaporizer 10, and the cleaning liquid tank 28, the circulation pump 3
2. The washing channel 22 circulating through the filter 36 is provided. An opening / closing valve 2 having an opening / closing position 2 is provided in each of the flow paths on the upstream side of the junction of the liquid material flow path 16a and the washing flow path 22.
4a and 24b are provided with similar on-off valves 24c and 24d in respective flow paths on the downstream side of the branch point between the gas flow path 16b and the cleaning flow path 22.
Are provided respectively. The cleaning area surrounded by these on-off valves and configured by a part of the liquid flow path and the gas flow path and the flow path inside the vaporizer is formed to have a pressure resistance that can withstand a cleaning pressure described later. .
【0022】洗浄流路22には、この流路の全体を加圧
する加圧ガスを収容するアキュムレータ34が設けられ
ている。洗浄液タンク28には、洗浄液26を気化器1
0の運転温度の、例えば250℃に加熱するヒータ30
が設けられている。洗浄液26として、例えば、THF
のような液体原料の作成に用いた溶剤と同じ成分のもの
を用いることより、洗浄液が気化器10の内部に残留し
ても、金属酸化物薄膜の気相成長を阻害しない。The washing channel 22 is provided with an accumulator 34 for containing a pressurized gas for pressurizing the entire channel. The cleaning liquid 26 is filled with the cleaning liquid 26 in the vaporizer 1.
A heater 30 for heating to an operating temperature of 0, for example 250 ° C.
Is provided. As the cleaning liquid 26, for example, THF
By using the same component as the solvent used for preparing the liquid raw material as described above, even if the cleaning liquid remains inside the vaporizer 10, the vapor phase growth of the metal oxide thin film is not hindered.
【0023】次に、この実施の形態の気化装置の作用を
説明する。成膜処理は、洗浄流路22内の2つの開閉弁
24b,24dを閉じ、液体原料流路16a及びガス流
路内の2つの開閉弁24a,24cを開いて行なう。Next, the operation of the vaporizer of this embodiment will be described. The film forming process is performed by closing the two on-off valves 24b and 24d in the cleaning channel 22 and opening the two on-off valves 24a and 24c in the liquid source channel 16a and the gas channel.
【0024】気化器10を洗浄する場合には、液体原料
流路16a及びガス流路内の2つの開閉弁24a,24
cを閉じ、洗浄流路22内の2つの開閉弁24b,24
dを開き、洗浄流路を密閉系とする。そして、ヒータ3
0によって予め気化器10の運転温度の例えば約250
℃に加熱しておき、アキュムレータ34によって、洗浄
流路を気化器の稼動温度における洗浄液の蒸気圧である
例えば41kg/cm2 以上に加圧しつつ、循環ポンプ
32を動作させる。When the vaporizer 10 is to be cleaned, two on-off valves 24a, 24a in the liquid material passage 16a and the gas passage are used.
c is closed and the two on-off valves 24b and 24 in the washing flow path 22 are closed.
Open d to make the washing channel a closed system. And heater 3
0 means that the operating temperature of the vaporizer 10 is about 250 in advance.
C., and the circulation pump 32 is operated by the accumulator 34 while pressurizing the cleaning flow path to, for example, 41 kg / cm 2 or more, which is the vapor pressure of the cleaning liquid at the operating temperature of the vaporizer.
【0025】洗浄液26は、フィルタ36によって固形
成分を除去された後、約250℃の温度であっても41
kg/cm2 以上の高圧によって液体状態を維持しつつ
気化器10の内部に流入し、気化器10内の付着物(汚
れ)を溶解しあるいは同伴して、気化器10の内部を洗
浄する。気化器を洗浄した洗浄液は、洗浄流路22から
タンクに戻る。このように、洗浄液を液体状態を維持し
つつ気化器に供給して気化器内部を効率的に洗浄する。After the solid components have been removed by the filter 36, the cleaning liquid 26 has a temperature of about 250.degree.
The gas flows into the vaporizer 10 while maintaining the liquid state by the high pressure of kg / cm 2 or more, and dissolves or accompanies the deposits (dirt) in the vaporizer 10 and cleans the inside of the vaporizer 10. The cleaning liquid that has cleaned the vaporizer returns from the cleaning channel 22 to the tank. As described above, the cleaning liquid is supplied to the vaporizer while maintaining the liquid state, thereby efficiently cleaning the inside of the vaporizer.
【0026】洗浄工程が終了すると、洗浄流路22内の
2つの開閉弁24b,24dを閉じ、液体原料流路16
a及びガス流路内の2つの開閉弁24a,24cを開い
て成膜処理工程を再開する。この実施の形態では、洗浄
液26は気化器10の稼動温度まで加熱されているた
め、洗浄工程において気化器10の温度が低下せず、従
って、気化器10の立ち上げ時間を最小限にすることが
できる。When the cleaning step is completed, the two on-off valves 24b and 24d in the cleaning flow path 22 are closed, and the liquid material flow path 16
a and the two on-off valves 24a and 24c in the gas flow path are opened to restart the film forming process. In this embodiment, since the cleaning liquid 26 is heated to the operating temperature of the vaporizer 10, the temperature of the vaporizer 10 does not decrease in the cleaning process, and therefore, the startup time of the vaporizer 10 is minimized. Can be.
【0027】なお、洗浄液を稼動温度より低い例えば常
温のままで流入させてもよい。気化器の温度がある程度
下がるが、温度の低下が僅かであれば再加熱の時間も僅
かであり、時間的な損失も少ない。The cleaning liquid may be introduced at a lower temperature than the operating temperature, for example, at normal temperature. Although the temperature of the vaporizer decreases to a certain extent, if the temperature decreases only slightly, the reheating time is also short and the time loss is small.
【0028】また、上述した工程においては、アキュム
レータ34によって洗浄流路の圧力を41kg/cm2
以上に設定したが、これより低い圧力設定とし、部分的
に気化を許容する条件で洗浄を行ってもよい。この場
合、特に洗浄液の温度を気化器の温度より低く設定して
おくと、洗浄液が気化器の内部においてその内壁部分で
沸騰し、それによる乱流の生成や撹拌によって、付着物
の掻き取り、溶解、あるいは同伴による除去が効率的に
なされる。また、アキュムレータ34による圧力保持手
段の代わりに、洗浄領域の末端部、即ち洗浄液のもどり
部に開閉弁を設け、開閉弁の一次圧を開閉弁のクラッキ
ング圧以上に圧力保持させることで代用できるのは勿論
である。In the above-described process, the accumulator 34 controls the pressure in the washing channel to 41 kg / cm 2.
Although set as described above, the pressure may be set lower than this, and the cleaning may be performed under conditions that allow partial vaporization. In this case, especially when the temperature of the cleaning liquid is set lower than the temperature of the vaporizer, the cleaning liquid boils on the inner wall portion inside the vaporizer, thereby generating a turbulent flow and stirring to scrape off the adhered substances, Efficient removal by dissolution or entrainment. Further, instead of the pressure holding means by the accumulator 34, an on-off valve is provided at the end of the cleaning area, that is, at the return portion of the cleaning liquid, and the primary pressure of the on-off valve can be maintained at a pressure higher than the cracking pressure of the on-off valve. Of course.
【0029】図2はこの発明の第2の実施の形態を示す
もので、この実施の形態が先のものと異なる点は、気化
器10の加熱手段が電気的なヒータではなく、気化器の
外側に設けられた熱媒体を流すジャケット40として構
成されている点である。そして、このジャケット40に
は、加熱のための高温熱媒体源42と、冷却のための低
温熱媒体源44の双方が、切換バルブ46及びポンプ4
8を有する熱媒体配管50によって選択的に供給される
ようになっている。FIG. 2 shows a second embodiment of the present invention. This embodiment is different from the first embodiment in that the heating means of the carburetor 10 is not an electric heater, but a carburetor. The point is that it is configured as a jacket 40 provided on the outside, through which a heat medium flows. The jacket 40 is provided with both a high-temperature heat medium source 42 for heating and a low-temperature heat medium source 44 for cooling, with a switching valve 46 and a pump 4.
8 is selectively supplied by a heat medium pipe 50 having the same.
【0030】この実施の形態の洗浄工程の一例を説明す
る。成膜工程では、気化器のジャケットに液体原料の気
化温度以上の高温の熱媒体を供給して気化を行なう。気
化工程が終わって洗浄工程を行なう場合には、開閉弁を
切り換えて低温の熱媒体をジャケットに供給し、気化器
の温度を気化温度と常温の間の適当な温度に下げて洗浄
圧力を低下させる。An example of the cleaning step of this embodiment will be described. In the film forming process, a heating medium having a temperature higher than the vaporization temperature of the liquid raw material is supplied to the jacket of the vaporizer to vaporize. When the cleaning process is performed after the vaporization process, the on-off valve is switched to supply a low-temperature heat medium to the jacket, and the temperature of the vaporizer is reduced to an appropriate temperature between the vaporization temperature and the normal temperature to reduce the cleaning pressure. Let it.
【0031】この温度は、あまり下げると再度の立ち上
げに時間を要するので、適当な値を選択する。例えば、
気化温度が250℃である場合の洗浄液の蒸気圧が41
kg/cm2 とすると、温度を200℃まで下げると蒸
気圧は20kg/cm2 となって圧力を低下させること
ができ、その分気化器やアキュムレータ34等の構造を
簡単なものとすることができる。温度を150℃まで下
げると蒸気圧は8kg/cm2 となってさらに圧力を低
下させることができる。If this temperature is lowered too much, it takes time to start up again, so an appropriate value is selected. For example,
When the vaporization temperature is 250 ° C., the vapor pressure of the cleaning liquid is 41
When kg / cm 2, the vapor pressure lowering the temperature to 200 ° C. can reduce the pressure becomes 20 kg / cm 2, to be a structure such as that amount carburetor and an accumulator 34 as a simple it can. When the temperature is lowered to 150 ° C., the vapor pressure becomes 8 kg / cm 2 and the pressure can be further reduced.
【0032】[0032]
【発明の効果】以上説明したように、本発明によれば、
十分な洗浄能力を有する液状の洗浄液で気化器の内部を
洗浄することができ、これによって、洗浄効率を高め、
気化器の内部を短時間で確実に洗浄することができる。
従って、気相成長装置のような処理装置の稼働率を向上
させて稼動コストを大きく低下させることができる。As described above, according to the present invention,
The inside of the vaporizer can be cleaned with a liquid cleaning liquid having a sufficient cleaning ability, thereby increasing the cleaning efficiency,
The inside of the vaporizer can be reliably cleaned in a short time.
Therefore, it is possible to improve the operation rate of a processing apparatus such as a vapor phase growth apparatus and to greatly reduce the operation cost.
【図1】本発明の第1の実施の形態の概略を示す図であ
る。FIG. 1 is a diagram showing an outline of a first embodiment of the present invention.
【図2】本発明の第2の実施の形態の概略を示す図であ
る。FIG. 2 is a diagram schematically illustrating a second embodiment of the present invention.
10 気化器 12 成膜室 16a 液体流路 16b ガス流路 22 洗浄流路 26 洗浄液 30 ヒータ(加熱手段) 34 アキュムレータ(加圧手段) 40 ジャケット DESCRIPTION OF SYMBOLS 10 Vaporizer 12 Film-forming chamber 16a Liquid flow path 16b Gas flow path 22 Cleaning flow path 26 Cleaning liquid 30 Heater (heating means) 34 Accumulator (pressure means) 40 Jacket
───────────────────────────────────────────────────── フロントページの続き (72)発明者 村上 武司 東京都大田区羽田旭町11番1号 株式会社 荏原製作所内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Takeshi Murakami 11-1 Haneda Asahimachi, Ota-ku, Tokyo Inside Ebara Corporation
Claims (6)
を流すための流路を洗浄する方法において、 前記流路の少なくとも一部を区画して所定の耐圧を有す
る洗浄液領域を構成する工程と、洗浄液を該洗浄液が前
記洗浄領域における洗浄温度において液状で存在するよ
うな洗浄圧力に加圧しながら流入させる工程とを有する
ことを特徴とする流路の洗浄方法。1. A method for cleaning a flow path for flowing a gas having a component that easily precipitates solids, comprising: forming a cleaning liquid region having a predetermined pressure resistance by partitioning at least a part of the flow path. Flowing the cleaning liquid while applying a cleaning pressure such that the cleaning liquid is present in a liquid state at the cleaning temperature in the cleaning area.
を流すための流路を洗浄する方法において、 前記流路の少なくとも一部を区画して所定の耐圧を有す
る洗浄液流路を構成する工程と、 洗浄液を該洗浄液が前記洗浄領域の洗浄温度において部
分的に沸騰するような洗浄圧力に加圧しながら流入させ
る工程とを有することを特徴とする流路の洗浄方法。2. A method for cleaning a flow path for flowing a gas having a component which tends to precipitate a solid, wherein at least a part of the flow path is partitioned to form a cleaning liquid flow path having a predetermined pressure resistance. And a step of flowing the cleaning liquid while pressurizing the cleaning liquid to a cleaning pressure at which the cleaning liquid partially boils at the cleaning temperature of the cleaning area.
体原料流路から供給された液体原料を気化して気化原料
流路に送る気化器と、 前記気化器の少なくとも一部を含む洗浄領域に洗浄液を
流入させる洗浄液供給手段と、 前記洗浄領域に流入する前記洗浄液を加圧する加圧手段
を有することを特徴とする気化装置。3. A vaporizer for vaporizing a liquid material supplied from the liquid material flow path at a predetermined vaporization pressure and temperature and sending the liquid material to the vaporized material flow path, and a cleaning liquid in a cleaning area including at least a part of the vaporizer. And a pressurizing means for pressurizing the cleaning liquid flowing into the cleaning area.
度におけるその蒸気圧以上に加圧することができること
を特徴とする請求項3に記載の気化装置。4. The vaporizer according to claim 3, wherein the pressurizing means can pressurize the cleaning liquid to a pressure higher than its vapor pressure at the cleaning temperature.
路に合流し、前記気化原料流路から分岐する洗浄流路を
有することを特徴とする請求項3に記載の気化装置。5. The vaporization apparatus according to claim 3, wherein the cleaning liquid supply unit has a cleaning flow path that joins the liquid raw material flow path and branches off from the vaporized raw material flow path.
媒体を切換可能に流通させる熱媒体流路が設けられてい
ることを特徴とする請求項3に記載の気化装置。6. The vaporizer according to claim 3, wherein the vaporizer is provided with a heat medium flow path that allows a heat medium for heating and a heat medium for cooling to flow in a switchable manner.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1330998A JPH10256242A (en) | 1997-01-08 | 1998-01-08 | Method for cleaning passage and vaporizer |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2987597 | 1997-01-08 | ||
JP9-29875 | 1997-01-08 | ||
JP1330998A JPH10256242A (en) | 1997-01-08 | 1998-01-08 | Method for cleaning passage and vaporizer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH10256242A true JPH10256242A (en) | 1998-09-25 |
Family
ID=26349081
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1330998A Pending JPH10256242A (en) | 1997-01-08 | 1998-01-08 | Method for cleaning passage and vaporizer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH10256242A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020179604A1 (en) * | 2019-03-07 | 2020-09-10 | 古河電気工業株式会社 | Vaporizer cleaning method and vaporizing apparatus |
-
1998
- 1998-01-08 JP JP1330998A patent/JPH10256242A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020179604A1 (en) * | 2019-03-07 | 2020-09-10 | 古河電気工業株式会社 | Vaporizer cleaning method and vaporizing apparatus |
JP2020142965A (en) * | 2019-03-07 | 2020-09-10 | 古河電気工業株式会社 | Method of cleaning vaporizer and vaporization device |
CN113597412A (en) * | 2019-03-07 | 2021-11-02 | 古河电气工业株式会社 | Method for cleaning vaporizer and vaporizer |
US11772006B2 (en) | 2019-03-07 | 2023-10-03 | Furukawa Electric Co., Ltd. | Method for cleaning vaporizer and vaporization apparatus |
CN113597412B (en) * | 2019-03-07 | 2024-02-20 | 古河电气工业株式会社 | Cleaning method and gasification device of gasifier |
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