JPH10246714A - Gas sensor material - Google Patents
Gas sensor materialInfo
- Publication number
- JPH10246714A JPH10246714A JP4913397A JP4913397A JPH10246714A JP H10246714 A JPH10246714 A JP H10246714A JP 4913397 A JP4913397 A JP 4913397A JP 4913397 A JP4913397 A JP 4913397A JP H10246714 A JPH10246714 A JP H10246714A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- sno
- formaldehyde
- gas sensor
- voc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、いわゆるVOCと
称される揮発性有機化合物やホルムアルデヒド(HCH
O)を検知するためのガスセンサ材料に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a volatile organic compound called so-called VOC or formaldehyde (HCH).
The present invention relates to a gas sensor material for detecting O).
【0002】[0002]
【従来の技術】従来より、タバコや燃焼機器からの排ガ
ス等による室内の空気の汚染を検知するために、SnO
2 をはじめとする半導体材料を用いた半導体ガスセンサ
が提供されている。2. Description of the Related Art Conventionally, SnO has been used to detect indoor air pollution caused by tobacco and exhaust gas from combustion equipment.
2 and other semiconductor gas sensors using semiconductor materials.
【0003】[0003]
【発明が解決しようとする課題】ところで、近年では住
宅の高気密化に伴い、建材等から発生するVOCやホル
ムアルデヒドによる室内の空気の汚染が問題となってき
ており、快適さ・健康面を考慮して、少なくとも1pp
m以下の低濃度でもVOCやホルムアルデヒドを検知し
て室内の空気を自動的に換気するようなシステムが望ま
れている。しかしながら、SnO2 等を用いた従来の半
導体ガスセンサでは、感度の関係で1ppm以下のVO
Cやホルムアルデヒドの検知が難しいという問題があっ
た。By the way, in recent years, with the increase in airtightness of houses, contamination of indoor air by VOC and formaldehyde generated from building materials has become a problem, and consideration has been given to comfort and health. And at least 1pp
There is a demand for a system that detects VOC and formaldehyde even at a low concentration of less than m and automatically ventilates indoor air. However, in a conventional semiconductor gas sensor using SnO 2 or the like, VO of 1 ppm or less is
There is a problem that it is difficult to detect C and formaldehyde.
【0004】本発明は上記事由に鑑みて為されたもので
あり、その目的は、VOCやホルムアルデヒドの検出感
度の高いガスセンサ材料を提供することにある。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a gas sensor material having high detection sensitivity for VOC and formaldehyde.
【0005】[0005]
【課題を解決するための手段】請求項1の発明は、上記
目的を達成するために、VOC及びホルムアルデヒドを
検知対象ガスとするガスセンサに用いられるガスセンサ
材料であって、SnO 2 又はSnO2 とAl2 O3 の混
合物からなる感ガス材料に添加物としてGd,Y,L
a,Nd,Ca,Mg,Baのうち一種類を略0.2乃
至略50原子パーセント添加して成ることを特徴とする
ものであり、従来のSnO2 又はSnO2とAl2 O3
の混合物からなる感ガス材料に比べて、揮発性有機化合
物及びホルムアルデヒドの検出感度が向上するから、低
濃度のVOC及びホルムアルデヒドに対して高感度なガ
スセンサを実現することができる。According to the first aspect of the present invention,
To achieve the purpose, VOC and formaldehyde
Gas sensor used for gas sensor to be detected gas
The material is SnO TwoOr SnOTwoAnd AlTwoOThreeBlend of
Gd, Y, L as additives to gas-sensitive materials consisting of compounds
a, Nd, Ca, Mg, Ba is approximately 0.2%
Characterized by adding approximately 50 atomic percent
And the conventional SnOTwoOr SnOTwoAnd AlTwoOThree
Volatile organic compounds compared to gas-sensitive materials consisting of
The detection sensitivity of substances and formaldehyde is improved.
Gas sensitive to high concentrations of VOC and formaldehyde
Sensor can be realized.
【0006】請求項2の発明は、VOC及びホルムアル
デヒドを検知対象ガスとするガスセンサに用いられるガ
スセンサ材料であって、SnO2 又はSnO2 とAl2
O3の混合物からなる感ガス材料に添加物としてGd,
Y,La,Nd,Ca,Mg,Baのうち少なくとも二
種類を合計略0.2乃至略50原子パーセント添加して
成ることを特徴とするものであり、従来のSnO2 又は
SnO2 とAl2 O3の混合物からなる感ガス材料に比
べて、揮発性有機化合物及びホルムアルデヒドの検出感
度が向上するから、低濃度のVOC及びホルムアルデヒ
ドに対して高感度なガスセンサを実現することができ、
しかも請求項1 の発明に比べて抵抗値の経時変化を少な
くすることができる。According to a second aspect of the present invention, there is provided a gas sensor material used for a gas sensor using VOC and formaldehyde as a detection target gas, comprising SnO 2 or SnO 2 and Al 2.
Gd, as an additive to a gas-sensitive material comprising a mixture of O 3
It is characterized in that at least two of Y, La, Nd, Ca, Mg, and Ba are added in a total amount of about 0.2 to about 50 atomic percent, and the conventional SnO 2 or SnO 2 and Al 2 Since the detection sensitivity of volatile organic compounds and formaldehyde is improved as compared with a gas-sensitive material composed of a mixture of O 3 , a gas sensor that is highly sensitive to low concentrations of VOC and formaldehyde can be realized,
In addition, the change with time of the resistance value can be reduced as compared with the first aspect of the invention.
【0007】請求項3の発明は、VOC及びホルムアル
デヒドを検知対象ガスとするガスセンサに用いられるガ
スセンサ材料であって、SnO2 又はSnO2 とAl2
O3の混合物からなる感ガス材料に添加物としてYとL
aとを合計略0.2乃至略50原子パーセント添加して
成ることを特徴とするものであり、従来のSnO2 又は
SnO2 とAl2 O3 の混合物からなる感ガス材料に比
べて、揮発性有機化合物及びホルムアルデヒドの検出感
度が向上するから、低濃度のVOC及びホルムアルデヒ
ドに対して高感度なガスセンサを実現することができ、
しかも請求項1の発明に比べて抵抗値の経時変化を少な
くすることができる。According to a third aspect of the present invention, there is provided a gas sensor material used for a gas sensor using VOC and formaldehyde as a detection target gas, comprising SnO 2 or SnO 2 and Al 2.
Y and L are added as additives to a gas-sensitive material consisting of a mixture of O 3.
a to a total of about 0.2 to about 50 atomic percent, and is more volatile than a conventional gas-sensitive material composed of SnO 2 or a mixture of SnO 2 and Al 2 O 3. Since the detection sensitivity of reactive organic compounds and formaldehyde is improved, it is possible to realize a gas sensor that is highly sensitive to low concentrations of VOC and formaldehyde,
Moreover, the change with time of the resistance value can be reduced as compared with the first aspect of the invention.
【0008】[0008]
【発明の実施の形態】以下、本発明の実施形態を図面を
参照して説明する。図1は本実施形態を用いたガスセン
サの構成を示しており、本実施形態では厚さ0.3mm
で一辺の長さが2mmの正方形のアルミナ基板(Al2
O3 基板)1の裏面に図1(b)に示すようにヒータ用
の金電極2A,2B及び4A’,4B’を設け、金電極
2A,2B間には酸化ルテニウムからなるヒータ3を形
成している。また、表面にはスルーホールにより裏面の
金電極4A’,4B’と接続された金電極4A,4Bを
図1(a)に示すように設け、金電極4A,4B間に亘
るようにSnO2 又はSnO2 とAl2 O3 (アルミ
ナ)からなる感ガス材料を塗布焼成している。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a configuration of a gas sensor using the present embodiment. In the present embodiment, the thickness is 0.3 mm.
And a square alumina substrate (Al 2
As shown in FIG. 1B, gold electrodes 2A, 2B and 4A ', 4B' for heaters are provided on the back surface of an O 3 substrate 1 and a heater 3 made of ruthenium oxide is formed between the gold electrodes 2A, 2B. doing. Further, the back surface of the gold electrode 4A via the through-hole on the surface ', 4B' and connected gold electrodes 4A, 4B are provided as shown in FIG. 1 (a), the gold electrodes 4A, to span between 4B SnO 2 Alternatively, a gas-sensitive material composed of SnO 2 and Al 2 O 3 (alumina) is applied and fired.
【0009】ここで、SnO2 の調整について説明する
と、まずSnCl4 (塩化スズ)の水溶液をNH3 で加
水分解してスズ酸ゾルを得、この得たスズ酸ゾルを風乾
燥後に空気中において例えば500℃乃至850℃で1
時間焼成し、SnO2 を得る。このSnO2 に対してP
d(パラジウム)の王水溶液を含浸させ、例えば500
℃で空気中において1時間熱分解してPdを担持させ
る。ここでのPdの役割はVOC及びホルムアルデヒド
に対する素子の応答性(速度)を改善するためのもので
あって、加えなくても良い。The adjustment of SnO 2 will now be described. First, an aqueous solution of SnCl 4 (tin chloride) is hydrolyzed with NH 3 to obtain a stannate sol, and the obtained stannate sol is air-dried and then dried in air. For example, at 500 to 850 ° C, 1
Baking for an hour to obtain SnO 2 . P for this SnO 2
impregnated with an aqueous solution of d (palladium), for example, 500
Pd is thermally decomposed in air at 1 ° C. for 1 hour. The role of Pd here is to improve the response (speed) of the device to VOC and formaldehyde, and need not be added.
【0010】また、Pdの代わりにPt(白金),Rh
(ロジウム),Au(金)等の貴金属やW(タングステ
ン),Mo(モリブデン)等の遷移金属を用いることも
できる。而して上述のようにPd或いはそれに代わる金
属を担持させたSnO2 若しくはこれら金属を担持させ
ないSnO2 に骨材として例えば1000メッシュのア
ルミナを等量混合し、更にテルピネオールを加えてペー
スト状にした後、アルミナ基板1の金電極4A,4Bの
間に亘るように略同形状に塗布し、例えば約700℃で
2時間焼成するのである。この後、有機シリカバイン
ダ、又はアルミナゾルを添加しても良い。有機シリカバ
インダ、又はアルミナゾルを添加しその後例えば700
℃で1時間焼成することにより、感ガス体の構造強度が
向上し、VOC及びホルムアルデヒドに対する感度が若
干向上する。Also, instead of Pd, Pt (platinum), Rh
Noble metals such as (rhodium) and Au (gold) and transition metals such as W (tungsten) and Mo (molybdenum) can also be used. Thus to mixing equal amounts of Pd or for example 1000 mesh alumina SnO 2 or the metal of the metal was allowed to carry an alternative to it as an aggregate to SnO 2 not to carry, as described above, and a paste further adding terpineol After that, it is applied in substantially the same shape so as to extend between the gold electrodes 4A and 4B of the alumina substrate 1, and baked at, for example, about 700 ° C. for 2 hours. Thereafter, an organic silica binder or an alumina sol may be added. An organic silica binder or alumina sol is added and then, for example, 700
By sintering at 1 ° C. for 1 hour, the structural strength of the gas-sensitive body is improved, and sensitivity to VOC and formaldehyde is slightly improved.
【0011】この焼成により金電極4A,4Bの間に亘
るように金属酸化物半導体たるSnO2 による素子片6
が同一基板1上に形成されることになる。またこの形成
後アルミナ基板1の裏面側の各電極2A,2B及び4
A’,4B’にはリードワイヤ5を夫々接続して、これ
らリードワイヤ5によりヒータ接続端子及び出力用端子
を構成する。By this baking, the element piece 6 made of SnO 2, which is a metal oxide semiconductor, extends between the gold electrodes 4A and 4B.
Are formed on the same substrate 1. After this formation, the electrodes 2A, 2B and 4 on the back side of the alumina substrate 1
Lead wires 5 are connected to A 'and 4B', respectively, and these lead wires 5 constitute a heater connection terminal and an output terminal.
【0012】(実施例1)本実施例は検知対象ガスをV
OC及びホルムアルデヒドとし、VOC及びホルムアル
デヒドに対して感度を発現させるための触媒としてGd
を用い、上記素子片6には例えばPdを2重量パーセン
ト(wt%)含有するSnO2 に対して5原子パーセン
ト(atm%)のGd(ガドリニウム)が添加されるよ
うにGdの硝酸塩水溶液を夫々滴下し、この滴下後自然
による乾燥を行った後、空気中において例えば500℃
で3時間焼成してガスセンサを形成した。(Embodiment 1) In this embodiment, the detection target gas is V
Gd as a catalyst for developing sensitivity to VOC and formaldehyde as OC and formaldehyde
Gd (gadolinium) is added to the element piece 6 so that 5 atomic percent (atm%) of SnO 2 containing, for example, 2 wt% (wt%) of Pd is added to each of the element pieces 6. After dripping, and after performing the drying by nature after this dripping, in air 500 degreeC, for example.
For 3 hours to form a gas sensor.
【0013】而して本実施例によるガスセンサにより、
ガスセンサの空気中の素子片6の両端抵抗Rair に対す
るVOC又はホルムアルデヒド(パラホルムアルデヒ
ド)のガス濃度を変化させた時の両端抵抗Rの割合(R
/Rair )を測定したところVOCについては図2にイ
で示すような結果が得られ、ホルムアルデヒドについて
は図2にロで示すような結果が得られた。これに対し、
Gdを添加しないガスセンサについてはVOC,ホルム
アルデヒドそれぞれで図3にイ及びロで示すような結果
が得られた。ここで、R/Rair は、値が1よりも小さ
い程感度が高いことを示すものであり、図2及び図3か
ら、Gdを添加することにより、VOC及びホルムアル
デヒドに対する感度が向上し、1ppm以下の低濃度の
VOC及びホルムアルデヒドでも十分に検知できること
がわかる。したがって、低濃度のVOCやホルムアルデ
ヒドに対して高感度なガスセンサを得ることができる。The gas sensor according to this embodiment provides
The ratio of the resistance R at both ends when the gas concentration of VOC or formaldehyde (paraformaldehyde) is changed to the resistance Rair at both ends of the element piece 6 in the air of the gas sensor.
/ Rair), the results shown in FIG. 2A were obtained for VOC, and the results shown in FIG. 2B were obtained for formaldehyde. In contrast,
With respect to the gas sensor to which Gd was not added, the results shown in FIGS. 3A and 3B were obtained for VOC and formaldehyde, respectively. Here, R / Rair indicates that the sensitivity is higher as the value is smaller than 1. As shown in FIGS. 2 and 3, by adding Gd, the sensitivity to VOC and formaldehyde is improved, and 1 ppm or less is obtained. It can be seen that even low concentrations of VOC and formaldehyde can be sufficiently detected. Therefore, a gas sensor that is highly sensitive to low concentrations of VOC and formaldehyde can be obtained.
【0014】ところで、例えばVOC又はホルムアルデ
ヒドのガス濃度が0.3ppmの場合に例えばGdの添
加量を種々変えて(Gdの添加量を0.2atm%乃至
50atm%の範囲で変化させて)R/Rair を測定し
たところ、VOCについて図4にイで示し、ホルムアル
デヒドについて図4にロで示すような結果が得られた。
この測定結果から所望の感度を確保するには、略0.2
乃至略50atm%のGdを添加することが望ましい。By the way, when the gas concentration of VOC or formaldehyde is 0.3 ppm, for example, the addition amount of Gd is changed variously (by changing the addition amount of Gd in the range of 0.2 to 50 atm%). When Rair was measured, the results shown in FIG. 4A for VOC and the results shown in FIG. 4B for formaldehyde were obtained for VOC.
To secure the desired sensitivity from this measurement result, approximately 0.2
It is desirable to add about 50 atm% of Gd.
【0015】なお、感ガス材料はSnO2 であったが、
SnO2 とAl2 O3 の混合物でも上記と同様の結果が
得られた。 (実施例2)本実施例は実施例1と同様に上記素子片6
には例えばPdを2wt%含有するSnO2 に対して5
atm%のGd(ガドリニウム)が添加されるようにG
dの硝酸塩水溶液を夫々滴下し、この滴下後自然による
乾燥を行った後、空気中において例えば500℃で3時
間焼成して、その後、有機シリカバインダを添加し例え
ば700℃で1時間焼成してガスセンサを形成した。Although the gas-sensitive material was SnO 2 ,
Similar results as described above were obtained with a mixture of SnO 2 and Al 2 O 3 . (Embodiment 2) This embodiment is similar to Embodiment 1 except that
For example, 5% for SnO 2 containing 2 wt% of Pd
G so that atm% of Gd (gadolinium) is added.
Each of the nitrate aqueous solutions of d was dropped, and after the dropping, the mixture was naturally dried, and calcined in air at, for example, 500 ° C. for 3 hours. A gas sensor was formed.
【0016】而して本実施例によるガスセンサにより、
ガスセンサの空気中の素子片6の両端抵抗Rair に対す
るVOC又はホルムアルデヒド(パラホルムアルデヒ
ド)のガス濃度を変化させた時の両端抵抗Rの割合(R
/Rair )を測定したところVOCについては図5にイ
で示すような結果が得られ、ホルムアルデヒドについて
は図5にロで示すような結果が得られた。これに対し、
Gdを添加しないガスセンサについてはVOC,ホルム
アルデヒドそれぞれで図6にイ及びロで示すような結果
が得られた。図5及び図6から、Gdを添加することに
より、VOC及びホルムアルデヒドに対する感度が向上
し、1ppm以下の低濃度のVOC及びホルムアルデヒ
ドでも十分に検知できることがわかる。したがって、低
濃度のVOCやホルムアルデヒドに対して高感度なガス
センサを得ることができる。With the gas sensor according to the present embodiment,
The ratio of the resistance R at both ends when the gas concentration of VOC or formaldehyde (paraformaldehyde) is changed to the resistance Rair at both ends of the element piece 6 in the air of the gas sensor.
/ Rair), the results shown in FIG. 5 (a) were obtained for VOC, and the results shown in FIG. 5 (b) were obtained for formaldehyde. In contrast,
With respect to the gas sensor to which Gd was not added, the results shown in FIGS. 6A and 6B were obtained for VOC and formaldehyde, respectively. 5 and 6 that the addition of Gd improves the sensitivity to VOC and formaldehyde, and can sufficiently detect VOC and formaldehyde at a low concentration of 1 ppm or less. Therefore, a gas sensor that is highly sensitive to low concentrations of VOC and formaldehyde can be obtained.
【0017】また、図5を実施例1の図2と比較する
と、有機シリカバインダを添加したことにより、VOC
及びホルムアルデヒドに対する感度が向上することがわ
かる。本実施例では、有機シリカバインダを添加したも
のについてのみ示したが、有機シリカバインダの代わり
にアルミナゾルを添加しても有機シリカバインダを添加
した場合と同様にVOC及びホルムアルデヒドの検出感
度が向上する。Also, comparing FIG. 5 with FIG. 2 of Example 1, the addition of the organic silica binder makes it possible to reduce the VOC.
And that the sensitivity to formaldehyde is improved. In this embodiment, only the case where the organic silica binder is added is shown. However, even if alumina sol is added instead of the organic silica binder, the detection sensitivity of VOC and formaldehyde is improved as in the case where the organic silica binder is added.
【0018】なお、上記各実施例では、Gdを添加した
ものについてのみ示したが、Gdの代わりにY(イット
リウム),La(ランタン),Nd(ネオジウム),C
a(カルシウム),Mg(マグネシウム),Ba(バリ
ウム)のいずれかを添加した場合や、これらの二種類の
元素を組み合わせて添加した場合にも、Gdを添加した
場合と同様にVOC及びホルムアルデヒドの検出感度が
向上する。ここに、所望の感度を確保するには、一種類
の元素を添加する場合はその元素を略0.2乃至略50
atm%添加することが望ましく、二種類の元素を添加
する場合はその2種類の元素の合計が略0.2乃至略5
0atm%となるように添加することが望ましい。In each of the above embodiments, only the case where Gd is added is shown, but instead of Gd, Y (yttrium), La (lanthanum), Nd (neodymium), Cd
a (calcium), Mg (magnesium), or Ba (barium), or a combination of these two elements, when VOC and formaldehyde are added in the same manner as when Gd is added. The detection sensitivity is improved. Here, in order to secure a desired sensitivity, when one kind of element is added, the element is added in an amount of about 0.2 to about 50.
Atm% is desirable, and when two kinds of elements are added, the total of the two kinds of elements is about 0.2 to about 5
It is desirable to add so as to be 0 atm%.
【0019】(実施例3)図7は、上述のガスセンサを
常温常湿(本実施例では、温度を略20℃、湿度を略6
5%とした)の空気中に放置した場合における素子片6
の両端抵抗Rairの経時変化の測定結果を示すグラフで
ある。ここに、Rair (i) は両端抵抗の初期値であり、
Rair(r)は測定開始後の各測定時(日)における両端抵
抗である。また、図7中のイはSnO2 に対してGdを
5atm%添加したもの、ロはSnO2 に対してYを5
atm%添加したもの、ハはSnO2 に対してGdを5
atm%添加するとともにYを5atm%添加したも
の、ニはSnO2 に対してLaを5atm%添加すると
ともにCaを5atm%添加したもの、ホはSnO2 に
対してLaを5atm%添加するとともにYを5atm
%添加したものである。なお、感ガス材料はSnO2 の
みであったがSnO2 とアルミナの混合物の場合も同様
の結果が得られた。(Embodiment 3) FIG. 7 shows that the above-described gas sensor is operated at room temperature and normal humidity (in this embodiment, the temperature is approximately 20 ° C. and the humidity is approximately 6 ° C.).
Element piece 6 when left in air
5 is a graph showing the measurement results of the change over time of the resistance Rair at both ends of the graph. Where Rair (i) is the initial value of the resistance at both ends,
Rair (r) is the resistance at both ends at the time of each measurement (day) after the start of the measurement. Also, Lee in Figure 7 have been added 5 atm% of Gd with respect to SnO 2, B is the Y relative SnO 2 5
Atm% added, G is 5% Gd with respect to SnO 2
that the Y was added 5 atm% with the addition atm%, two is made by adding 5 atm% of Ca with addition of 5 atm% of La relative SnO 2, E together with added 5 atm% of La relative SnO 2 Y 5 atm
%. The gas-sensitive material was only SnO 2 , but similar results were obtained with a mixture of SnO 2 and alumina.
【0020】図7に示す測定結果から、SnO2 に対し
て二種類以上の元素を添加した方が、抵抗値の経時安定
性が良くなることが分かる。特に、SnO2 に対してL
aを5atm%添加するとともにYを5atm%添加し
た場合には、両端抵抗Rairの変化は殆どなく良好な経
時安定性が得られることが分かる。なお、イ〜ニでは経
過日数とともに両端抵抗Rair の値が低下しているが、
VOC及びホルムアルデヒドの検出感度については29
日経過後においてもイ〜ホのいずれのガスセンサでもほ
とんど変化はなかった。From the measurement results shown in FIG. 7, it can be seen that the stability over time of the resistance value is better when two or more elements are added to SnO 2 . In particular, L for SnO 2
When a is added at 5 atm% and Y is added at 5 atm%, it can be seen that both ends resistance Rair hardly changes and good temporal stability can be obtained. In addition, although the value of the resistance Rair at both ends decreases with the number of days elapsed in (a) to (d),
For the detection sensitivity of VOC and formaldehyde, see 29
Even after the passage of days, there was almost no change in any of the gas sensors A to E.
【0021】[0021]
【発明の効果】請求項1の発明は、上記目的を達成する
ために、VOC及びホルムアルデヒドを検知対象ガスと
するガスセンサに用いられるガスセンサ材料であって、
SnO 2 又はSnO2 とAl2 O3 の混合物からなる感
ガス材料に添加物としてGd,Y,La,Nd,Ca,
Mg,Baのうち一種類を略0.2乃至略50原子パー
セント添加したので、従来のSnO2 又はSnO2 とA
l2 O3 の混合物からなる感ガス材料に比べて、揮発性
有機化合物及びホルムアルデヒドの検出感度が向上する
から、低濃度のVOC及びホルムアルデヒドに対して高
感度なガスセンサを実現することができるという効果が
ある。According to the first aspect of the present invention, the above object is achieved.
For this reason, VOC and formaldehyde are
A gas sensor material used for a gas sensor,
SnO TwoOr SnOTwoAnd AlTwoOThreeFeeling of a mixture of
Gd, Y, La, Nd, Ca,
One of Mg and Ba is used in a range of approximately 0.2 to approximately 50 atomic par.
Because of the cent addition, the conventional SnOTwoOr SnOTwoAnd A
lTwoOThreeVolatile compared to gas-sensitive materials consisting of a mixture of
Improved detection sensitivity for organic compounds and formaldehyde
From high to low concentrations of VOCs and formaldehyde
The effect that a highly sensitive gas sensor can be realized
is there.
【0022】請求項2の発明は、VOC及びホルムアル
デヒドを検知対象ガスとするガスセンサに用いられるガ
スセンサ材料であって、SnO2 又はSnO2 とAl2
O3の混合物からなる感ガス材料に添加物としてGd,
Y,La,Nd,Ca,Mg,Baのうち少なくとも二
種類を合計略0.2乃至略50原子パーセント添加した
ので、従来のSnO2 又はSnO2 とAl2 O3 の混合
物からなる感ガス材料に比べて、揮発性有機化合物及び
ホルムアルデヒドの検出感度が向上するから、低濃度の
VOC及びホルムアルデヒドに対して高感度なガスセン
サを実現することができ、しかも請求項1 の発明に比べ
て抵抗値の経時変化を少なくすることができるという効
果がある。According to a second aspect of the present invention, there is provided a gas sensor material used for a gas sensor using VOC and formaldehyde as detection target gases, wherein SnO 2 or SnO 2 and Al 2
Gd, as an additive to a gas-sensitive material comprising a mixture of O 3
Since at least two of Y, La, Nd, Ca, Mg, and Ba are added in a total amount of about 0.2 to about 50 atomic percent, a conventional gas-sensitive material made of SnO 2 or a mixture of SnO 2 and Al 2 O 3. Since the detection sensitivity of volatile organic compounds and formaldehyde is improved as compared with the above, a gas sensor that is highly sensitive to low concentrations of VOC and formaldehyde can be realized, and has a lower resistance value than the invention of claim 1. There is an effect that a change with time can be reduced.
【0023】請求項3の発明は、VOC及びホルムアル
デヒドを検知対象ガスとするガスセンサに用いられるガ
スセンサ材料であって、SnO2 又はSnO2 とAl2
O3の混合物からなる感ガス材料に添加物としてYとL
aとを合計略0.2乃至略50原子パーセント添加した
ので、従来のSnO2 又はSnO2 とAl2 O3 の混合
物からなる感ガス材料に比べて、揮発性有機化合物及び
ホルムアルデヒドの検出感度が向上するから、低濃度の
VOC及びホルムアルデヒドに対して高感度なガスセン
サを実現することができ、しかも請求項1 の発明に比べ
て抵抗値の経時変化を少なくすることができるという効
果がある。According to a third aspect of the present invention, there is provided a gas sensor material used for a gas sensor using VOC and formaldehyde as a detection target gas, comprising SnO 2 or SnO 2 and Al 2.
Y and L are added as additives to a gas-sensitive material consisting of a mixture of O 3.
a was added in a total amount of about 0.2 to about 50 atomic percent, so that the sensitivity of detecting volatile organic compounds and formaldehyde was lower than that of a conventional gas-sensitive material composed of SnO 2 or a mixture of SnO 2 and Al 2 O 3. As a result, it is possible to realize a gas sensor that is highly sensitive to low concentrations of VOC and formaldehyde, and has the effect of reducing the change over time in the resistance value as compared with the first aspect of the present invention.
【図1】(a)は本発明の実施形態のガスセンサ材料を
用いたガスセンサの表面側から見た斜視図である。
(b)は同上のガスセンサの裏面側から見た斜視図であ
る。FIG. 1A is a perspective view of a gas sensor using a gas sensor material according to an embodiment of the present invention as viewed from the front side.
(B) is the perspective view seen from the back side of the gas sensor same as the above.
【図2】同上の実施例1の抵抗値変化の濃度依存性を示
すグラフである。FIG. 2 is a graph showing the concentration dependence of a resistance value change in Example 1 of the embodiment.
【図3】同上の実施例1との比較例の抵抗値変化の濃度
依存性を示すグラフである。FIG. 3 is a graph showing the concentration dependence of a change in resistance value in a comparative example with the first embodiment.
【図4】同上の抵抗値変化とGd添加量との関係を示す
グラフである。FIG. 4 is a graph showing the relationship between the change in resistance value and the amount of Gd added.
【図5】同上の実施例2の抵抗値変化の濃度依存性を示
すグラフである。FIG. 5 is a graph showing the concentration dependency of a change in resistance value in Example 2 of the embodiment.
【図6】同上の実施例2との比較例の抵抗値変化の濃度
依存性を示すグラフである。FIG. 6 is a graph showing the concentration dependence of a change in resistance value in a comparative example with the above-mentioned Example 2.
【図7】同上の実施例3の抵抗値の経時変化の測定結果
を示すグラフである。FIG. 7 is a graph showing a measurement result of a change with time of the resistance value of Example 3 of the above.
1 アルミナ基板 2A,2B 金電極 3 ヒータ 4A,4B、4A’,4B’ 金電極 5 リードワイヤ 6 素子片 Reference Signs List 1 alumina substrate 2A, 2B gold electrode 3 heater 4A, 4B, 4A ', 4B' gold electrode 5 lead wire 6 element piece
Claims (3)
ガスとするガスセンサに用いられるガスセンサ材料であ
って、SnO2 又はSnO2 とAl2 O3 の混合物から
なる感ガス材料に添加物としてGd,Y,La,Nd,
Ca,Mg,Baのうち一種類を略0.2乃至略50原
子パーセント添加して成ることを特徴とするガスセンサ
材料。1. A gas sensor material used for a gas sensor using VOC and formaldehyde as a detection target gas, wherein Gd, Y, La is added as an additive to a gas-sensitive material made of SnO 2 or a mixture of SnO 2 and Al 2 O 3. , Nd,
A gas sensor material comprising one of Ca, Mg, and Ba added at about 0.2 to about 50 atomic percent.
ガスとするガスセンサに用いられるガスセンサ材料であ
って、SnO2 又はSnO2 とAl2 O3 の混合物から
なる感ガス材料に添加物としてGd,Y,La,Nd,
Ca,Mg,Baのうち少なくとも二種類を合計略0.
2乃至略50原子パーセント添加して成ることを特徴と
するガスセンサ材料。2. A gas sensor material used for a gas sensor using VOC and formaldehyde as a detection target gas, wherein Gd, Y, La is added as an additive to a gas-sensitive material made of SnO 2 or a mixture of SnO 2 and Al 2 O 3. , Nd,
At least two of Ca, Mg, and Ba are used in a total of approximately 0,1.
A gas sensor material comprising 2 to about 50 atomic percent added.
ガスとするガスセンサに用いられるガスセンサ材料であ
って、SnO2 又はSnO2 とAl2 O3 の混合物から
なる感ガス材料に添加物としてYとLaとを合計略0.
2乃至略50原子パーセント添加して成ることを特徴と
するガスセンサ材料。3. A gas sensor material used for a gas sensor using VOC and formaldehyde as a detection target gas, wherein Y and La are added as additives to a gas-sensitive material made of SnO 2 or a mixture of SnO 2 and Al 2 O 3. Total 0.
A gas sensor material comprising 2 to about 50 atomic percent added.
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JP04913397A JP3854358B2 (en) | 1997-03-04 | 1997-03-04 | Gas sensor material |
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JPH10246714A true JPH10246714A (en) | 1998-09-14 |
JP3854358B2 JP3854358B2 (en) | 2006-12-06 |
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Cited By (6)
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---|---|---|---|---|
WO2006006493A1 (en) * | 2004-07-09 | 2006-01-19 | Uchiya Thermostat Co., Ltd. | Gas sensor and method for manufacturing same |
KR100791812B1 (en) | 2006-07-03 | 2008-01-04 | 한국과학기술연구원 | Tin Oxide Nanowire Gas Sensor and Manufacturing Method Thereof |
CN100406880C (en) * | 2006-01-17 | 2008-07-30 | 山东师范大学 | Superimposed sensitive layer formaldehyde gas sensor and manufacturing method thereof |
JPWO2006011202A1 (en) * | 2004-07-28 | 2008-07-31 | エフアイエス株式会社 | Semiconductor gas sensor |
CN102680540A (en) * | 2012-06-07 | 2012-09-19 | 惠州市富济电子材料有限公司 | Formaldehyde gas-sensing material, corresponding formaldehyde gas-sensing element and preparation method of element |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006006493A1 (en) * | 2004-07-09 | 2006-01-19 | Uchiya Thermostat Co., Ltd. | Gas sensor and method for manufacturing same |
JPWO2006011202A1 (en) * | 2004-07-28 | 2008-07-31 | エフアイエス株式会社 | Semiconductor gas sensor |
CN100406880C (en) * | 2006-01-17 | 2008-07-30 | 山东师范大学 | Superimposed sensitive layer formaldehyde gas sensor and manufacturing method thereof |
KR100791812B1 (en) | 2006-07-03 | 2008-01-04 | 한국과학기술연구원 | Tin Oxide Nanowire Gas Sensor and Manufacturing Method Thereof |
CN102680540A (en) * | 2012-06-07 | 2012-09-19 | 惠州市富济电子材料有限公司 | Formaldehyde gas-sensing material, corresponding formaldehyde gas-sensing element and preparation method of element |
CN113820363A (en) * | 2021-08-27 | 2021-12-21 | 山东大学 | Platinum-supported porous tin oxide nanosphere gas-sensing material and its preparation method and application |
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