[go: up one dir, main page]

JPH10242086A - Semiconductor wafer holding sheet - Google Patents

Semiconductor wafer holding sheet

Info

Publication number
JPH10242086A
JPH10242086A JP9059796A JP5979697A JPH10242086A JP H10242086 A JPH10242086 A JP H10242086A JP 9059796 A JP9059796 A JP 9059796A JP 5979697 A JP5979697 A JP 5979697A JP H10242086 A JPH10242086 A JP H10242086A
Authority
JP
Japan
Prior art keywords
adhesive layer
parts
semiconductor wafer
sheet
elastic modulus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9059796A
Other languages
Japanese (ja)
Inventor
Mitsuharu Akazawa
光治 赤沢
Tatsuya Kubozono
達也 久保園
Takuji Okeyui
卓司 桶結
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Priority to JP9059796A priority Critical patent/JPH10242086A/en
Publication of JPH10242086A publication Critical patent/JPH10242086A/en
Pending legal-status Critical Current

Links

Landscapes

  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent or greatly suppress breaks of cut faces by dicing to greatly improve the chip yield, by attaching an adhesive layer having a storage elastic modulus in specified range at specified temps. SOLUTION: An adhesive layer having a storage elastic modulus of 3×10<6> -1×10<10> dyn/cm<2> at 0-10 deg.C is attached to a support sheet to form a semiconductor wafer hold sheet. The storage elastic modulus is measured in a range of 0-10 at a frequency of 1Hz by feeding the adhesive layer of 0.5mm thick to a dynamic viscoelasticity meter (viscoelastic spectrometer), the adhesive layer is made of a rubber adhesive made of natural or synthetic rubber or acrylic adhesive, and the support sheet of the adhesive layer is a polyethylene, polyester, polycarbonate or other plastic sheet of 10-300μm.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の技術分野】本発明は、半導体ウエハをチップに
ダイシングする際などにおけるウエハの固定保持に好適
な半導体ウエハ保持シートに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer holding sheet suitable for fixing and holding a wafer when dicing a semiconductor wafer into chips.

【0002】[0002]

【従来の技術】IC等の所定の回路パターンが形成され
た半導体ウエハは、裏面研磨されて例えば0.1〜0.
4mm厚程度に可及的に薄くされた後、金属粒子分散のブ
レードを高速回転させる方式などの回転刃を介し所定の
チップサイズにダイシング処理されるが、その処理に際
しては、支持シートに粘着層を付設してなる保持シート
でウエハを固定保持し、保持シート厚の一部(5〜20
μm程度)にまで達する切断を行ってウエハをフルカッ
トする方法が一般に採られている。
2. Description of the Related Art A semiconductor wafer on which a predetermined circuit pattern such as an IC is formed is polished on the back side to, for example, 0.1 to 0.2 mm.
After being thinned to a thickness of about 4 mm, dicing is performed to a predetermined chip size through a rotary blade such as a method of rotating a blade of metal particles at a high speed. The wafer is fixedly held by a holding sheet provided with a part of the holding sheet thickness (5 to 20).
Generally, a method of cutting the wafer down to about μm) to completely cut the wafer is employed.

【0003】しかしながら、従来の保持シートにあって
は、ダイシング時の衝撃や振動等により形成されるチッ
プの切断面に数μm〜数mmの欠けを生じさせる問題点が
あった。かかる欠けは、ガリウム砒素等の化合物半導体
ではより大きくなる。
However, in the conventional holding sheet, there is a problem that a chip of several μm to several mm is formed on a cut surface of a chip formed by shock or vibration during dicing. Such chipping is greater in compound semiconductors such as gallium arsenide.

【0004】[0004]

【発明の技術的課題】本発明は、半導体ウエハをダイシ
ング処理する際の切断面の欠けが発生しにくい半導体ウ
エハ保持シートを得ることを課題とする。
SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor wafer holding sheet in which a cut surface is less likely to be chipped when dicing a semiconductor wafer.

【0005】[0005]

【課題の解決手段】本発明は、0〜10℃の範囲におけ
る貯蔵弾性率が3×106〜1×1010dyn/cm2の範囲
にある粘着層を支持シートに付設してなることを特徴と
する半導体ウエハ保持シートを提供するものである。
According to the present invention, there is provided a support sheet having an adhesive layer having a storage elastic modulus in a range of 0 to 10 ° C. in a range of 3 × 10 6 to 1 × 10 10 dyn / cm 2. A feature of the present invention is to provide a semiconductor wafer holding sheet.

【0006】[0006]

【発明の効果】前記貯蔵弾性率の粘着層を介し半導体ウ
エハを固定保持することにより、ダイシングの際の切断
面の欠けを防止、ないし大幅に抑制でき、チップの歩留
まりを大幅に向上させることができる。すなわち切断面
の欠けは、回転刃の目詰りによる切断能の低下やチップ
の激しい振動等に基づくものと考えられが、粘着層の貯
蔵弾性率を前記の範囲とすることで回転刃の目詰りやチ
ップの振動を抑制することができる。
According to the present invention, by fixing and holding the semiconductor wafer through the adhesive layer having the above storage elastic modulus, chipping of the cut surface during dicing can be prevented or largely suppressed, and the chip yield can be greatly improved. it can. That is, it is considered that chipping of the cut surface is based on a decrease in cutting ability due to clogging of the rotary blade and severe vibration of the chip, but clogging of the rotary blade by setting the storage elastic modulus of the adhesive layer to the above range. And vibration of the chip can be suppressed.

【0007】従って前記より、0〜10℃の比較的低温
における粘着層の貯蔵弾性率が、ダイシング時における
高速変形の挙動領域と相関していると考えられる。なお
上記の貯蔵弾性率は、厚さ0.5mm、直径8mmの粘着層
を動的粘弾性測定機(レオメトリック社製、粘弾性スペ
クトロメータ)に供給し、周波数1Hzでの0〜10℃
の範囲における測定値(貯蔵弾性率)に基づく。
Therefore, it is considered from the above that the storage elastic modulus of the pressure-sensitive adhesive layer at a relatively low temperature of 0 to 10 ° C. is correlated with a high-speed deformation behavior region during dicing. The above storage elastic modulus was measured by supplying an adhesive layer having a thickness of 0.5 mm and a diameter of 8 mm to a dynamic viscoelasticity measuring machine (manufactured by Rheometric Co., viscoelastic spectrometer) at 0 to 10 ° C. at a frequency of 1 Hz.
Based on the measured value (storage modulus).

【0008】[0008]

【発明の実施形態】本発明の半導体ウエハ保持シート
は、0〜10℃の範囲における貯蔵弾性率が3×106
〜1×1010dyn/cm2の範囲にある粘着層を支持シート
に付設したものであり、その粘着層を介し半導体ウエハ
を接着固定して保持するものである。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The semiconductor wafer holding sheet of the present invention has a storage elastic modulus of 3 × 10 6 in the range of 0 to 10 ° C.
An adhesive layer in the range of 11 × 10 10 dyn / cm 2 is attached to the support sheet, and the semiconductor wafer is adhered and held through the adhesive layer.

【0009】粘着層は、前記の貯蔵弾性率を満足するも
のであればよい。従って粘着層の形成には、例えば天然
ゴムや合成ゴム等を用いたゴム系粘着剤、ポリ(メタ)
アクリル酸アルキルエステルや(メタ)アクリル酸アル
キルエステルと他のモノマーとの共重合体等を用いたア
クリル系粘着剤、その他ポリウレタン系粘着剤やポリエ
ステル系粘着剤やポリカーボネート系粘着剤などの適宜
な粘着剤を用いることができ、紫外線等のエネルギー線
で硬化処理するようにしたものなどであってもよい。
The adhesive layer may be any one that satisfies the above storage modulus. Therefore, for forming the adhesive layer, for example, a rubber-based adhesive using natural rubber or synthetic rubber, poly (meth)
Appropriate adhesives such as acrylic adhesives using copolymers of alkyl acrylates or alkyl (meth) acrylates with other monomers, and other polyurethane adhesives, polyester adhesives, and polycarbonate adhesives An agent may be used, and may be one that is cured by energy rays such as ultraviolet rays.

【0010】ちなみに前記の貯蔵弾性率を満足する粘着
剤の調製は、粘着層の骨格となる主ポリマーに前記貯蔵
弾性率の高いものを用い、それに例えば炭素・炭素二重
結合を2個以上有する低分子化合物や(光)重合開始
剤、可塑剤や粘着付与剤、加硫剤などの粘着剤で使用さ
れることのある比較的低分子量の添加剤を配合する方
式、あるいは粘着層、特にその骨格となる主ポリマー又
はオリゴマーの架橋密度を高くする方式などにより行う
ことができる。
Incidentally, the preparation of the pressure-sensitive adhesive satisfying the above-mentioned storage elastic modulus uses a high polymer having the above-mentioned high storage elastic modulus as a main polymer serving as a skeleton of the pressure-sensitive adhesive layer and has, for example, two or more carbon-carbon double bonds. A method of blending a low-molecular compound, a (photo) polymerization initiator, a plasticizer, a tackifier, a relatively low-molecular-weight additive that may be used in a pressure-sensitive adhesive such as a vulcanizing agent, or a pressure-sensitive adhesive layer, It can be carried out by a method of increasing the crosslink density of the main polymer or oligomer serving as the skeleton.

【0011】前記粘着層の架橋密度の制御は、例えば多
官能イソシアネート系化合物やエポキシ系化合物、メラ
ミン系化合物や金属塩系化合物、金属キレート系化合物
やアミノ樹脂系化合物や過酸化物などの適宜な架橋剤を
介して架橋処理する方式、炭素・炭素二重結合を2個以
上有する低分子化合物を混合してエネルギー線の照射等
により架橋処理する方式などの適宜な方式で行うことが
できる。
The crosslinking density of the pressure-sensitive adhesive layer can be controlled, for example, by appropriately controlling a polyfunctional isocyanate compound, an epoxy compound, a melamine compound, a metal salt compound, a metal chelate compound, an amino resin compound or a peroxide. An appropriate method such as a method of performing a cross-linking treatment via a cross-linking agent, a method of mixing a low-molecular compound having two or more carbon-carbon double bonds, and performing a cross-linking treatment by irradiation with energy rays or the like can be used.

【0012】粘着層は、チップ切断面の欠け防止の点よ
り0〜10℃の範囲における貯蔵弾性率が高いほど好ま
しく、接着力等のウエハの固定保持などの点よりは20
℃以上での貯蔵弾性率が低いほど好ましい。チップ切断
面の欠け防止やウエハの固定保持の両立性などの点より
好ましい粘着層は、0〜10℃の範囲における貯蔵弾性
率が4×106dyn/cm2以上、就中1×107〜1×10
10dyn/cm2で、20℃以上での貯蔵弾性率が3×106d
yn/cm2以下、就中1×106〜3×105dyn/cm2のも
のである。
The pressure-sensitive adhesive layer preferably has a higher storage elastic modulus in the range of 0 to 10 ° C. in order to prevent chipping of the chip cut surface.
It is preferable that the storage elastic modulus at a temperature of not lower than ℃ is lower. The pressure-sensitive adhesive layer, which is preferable from the viewpoint of preventing chipping of chip cutting surface and compatibility with holding and holding the wafer, has a storage elastic modulus of 4 × 10 6 dyn / cm 2 or more in the range of 0 to 10 ° C., and particularly 1 × 10 7. ~ 1 × 10
10 dyn / cm 2 , storage elastic modulus at 20 ° C. or more is 3 × 10 6 d
yn / cm 2 or less, especially 1 × 10 6 to 3 × 10 5 dyn / cm 2 .

【0013】本発明の保持シートの形成は例えば、支持
シートに粘着剤を塗工してそれを加熱処理する方式など
の粘着テープの形成方法に準じて行うことができる。粘
着層の厚さは適宜に決定してよいが、チップ切断面の欠
け防止やウエハの固定保持の両立性などの点よりは、1
〜50μm、就中2〜30μm、特に5〜15μmの厚さ
が好ましい。
The holding sheet of the present invention can be formed, for example, according to a method of forming a pressure-sensitive adhesive tape such as a method of applying a pressure-sensitive adhesive to a support sheet and heat-treating the same. Although the thickness of the adhesive layer may be determined as appropriate, it is more preferable that the thickness of the adhesive layer be 1 in order to prevent chipping of the cut surface of the chip and to keep the wafer fixed and compatible.
A thickness of の 50 μm, preferably 2-30 μm, especially 5-15 μm is preferred.

【0014】なお粘着層の接着力は、ウエハの固定保持
力や形成したチップの回収性などの点より、シリコンミ
ラーウエハに対する常温での接着力(90度ピール値、
剥離速度300mm/分)に基づいて、2000g/20mm
以下、就中0.1〜1000g/20mm、特に1〜800
g/20mmが好ましい。
The adhesive force of the adhesive layer at room temperature (90 ° peel value, 90 ° peel value,
2000g / 20mm based on a peeling speed of 300mm / min)
Hereinafter, especially 0.1 to 1000 g / 20 mm, particularly 1 to 800 g
g / 20 mm is preferred.

【0015】粘着層を支持する支持シートとしては、適
宜なものを用いてよく一般には、例えばポリプロピレン
やポリエステル、ポリカーボネートやポリエチレン、エ
チレン・酢酸ビニル共重合体やエチレン・エチルアクリ
レート共重合体、エチレン・プロピレン共重合体やポリ
塩化ビニルなどの適宜なプラスチックからなる厚さが1
0〜300μmのシートなどが用いられる。
As the support sheet for supporting the adhesive layer, an appropriate one may be used. In general, for example, polypropylene, polyester, polycarbonate, polyethylene, ethylene / vinyl acetate copolymer, ethylene / ethyl acrylate copolymer, ethylene / ethyl acrylate copolymer It is made of a suitable plastic such as propylene copolymer or polyvinyl chloride and has a thickness of 1
A sheet of 0 to 300 μm or the like is used.

【0016】また支持シートとしては、延伸処理等によ
り熱収縮性を付与した樹脂シートなども用いうる。熱収
縮性の支持シートによれば、ダイシング後その支持シー
トを熱収縮させることによりチップとの接着面を低下で
き、チップ回収の容易化を図ることができる。なおチッ
プ回収の容易化は、例えば硬化剤や発泡剤等を含有する
組成の粘着層として、ダイシング後にエネルギー線等を
介し硬化処理する方式や加熱処理等を介し発泡処理する
方式などにより接着力を低下させうるようにする方式等
によっても達成することができる。
Further, as the support sheet, a resin sheet or the like to which heat shrinkage is imparted by a stretching treatment or the like can be used. According to the heat-shrinkable support sheet, the support sheet can be thermally contracted after dicing, so that the bonding surface with the chip can be reduced, and the chip can be easily collected. In order to facilitate chip collection, for example, as an adhesive layer having a composition containing a curing agent, a foaming agent, and the like, the adhesive force is increased by a method of performing a curing treatment via an energy beam or the like after dicing or a method of performing a foaming treatment via a heat treatment or the like. It can also be achieved by a method or the like that can be reduced.

【0017】保持シートにおける粘着層は、保管時や流
通時等における汚染防止等の点から半導体ウエハに接着
するまでの間、セパレータや剥離ライナなどにより被覆
保護することが好ましい。セパレータ等は、紙やプラス
チックフィルムなどからなる柔軟な薄葉体に、必要に応
じ剥離剤の表面コートを設ける方式などにより得ること
ができる。
The adhesive layer of the holding sheet is preferably covered and protected by a separator, a release liner, or the like until the adhesive layer adheres to the semiconductor wafer from the viewpoint of preventing contamination during storage and distribution. The separator and the like can be obtained by a method in which a flexible thin sheet made of paper, a plastic film, or the like is provided with a surface coat of a release agent as necessary.

【0018】本発明の保持シートは、ダイシング工程や
裏面研磨工程などの半導体ウエハを加工する各種の工程
において、その半導体ウエハの固定保持に好ましく用い
うる。その場合、保持シートはウエハの平面形状に対応
する形状や連続シートなどの適宜な形態で用いることが
できる。
The holding sheet of the present invention can be preferably used for fixing and holding the semiconductor wafer in various processes for processing the semiconductor wafer such as a dicing process and a back surface polishing process. In this case, the holding sheet can be used in an appropriate form such as a shape corresponding to the planar shape of the wafer or a continuous sheet.

【0019】また保持シートには、その接着時や剥離時
等における静電気の発生やそれによる半導体ウエハの帯
電で回路が破壊されることなどを防止する目的で帯電防
止能をもたせることもできる。帯電防止能の付与は、支
持シートないし粘着層への帯電防止剤や導電剤の添加、
支持シートへの電荷移動錯体や金属膜等からなる導電層
の付設など、適宜な方式で行うことができ、半導体ウエ
ハを変質させるおそれのある不純物イオンが発生しにく
い方式が好ましい。
Further, the holding sheet may have an antistatic function for the purpose of preventing static electricity from being generated at the time of bonding or peeling of the sheet, and the circuit being broken by the electrification of the semiconductor wafer. The provision of antistatic ability is achieved by adding an antistatic agent or a conductive agent to the support sheet or the adhesive layer,
An appropriate method such as attaching a conductive layer made of a charge transfer complex, a metal film, or the like to the support sheet can be performed, and a method that does not easily generate impurity ions that may deteriorate the semiconductor wafer is preferable.

【0020】[0020]

【実施例】【Example】

実施例1 アクリル酸メチル70部(重量部、以下同じ)とアクリ
ル酸ブチル30部とアクリル酸5部をトルエン中で常法
により共重合させて得た数平均分子量30万のアクリル
系共重合体を含有する溶液に、そのアクリル系共重合体
100部あたり70部のウレタンオリゴマーと5部の多
官能イソシアネート化合物を加えてアクリル系粘着剤を
調製し、それを厚さ70μmのポリ塩化ビニルフィルム
の片面に塗工し130℃で3分間加熱して厚さ15μm
の粘着層を有する保持シートを得た。
Example 1 An acrylic copolymer having a number average molecular weight of 300,000 obtained by copolymerizing 70 parts of methyl acrylate (parts by weight, the same applies hereinafter), 30 parts of butyl acrylate, and 5 parts of acrylic acid in a conventional manner in toluene. Was added to a solution containing 70 parts of a urethane oligomer and 5 parts of a polyfunctional isocyanate compound per 100 parts of the acrylic copolymer to prepare an acrylic pressure-sensitive adhesive, which was used to prepare a 70 μm thick polyvinyl chloride film. Coated on one side and heated at 130 ° C for 3 minutes, thickness 15μm
A holding sheet having a pressure-sensitive adhesive layer was obtained.

【0021】実施例2 ポリカーボネートジオール80部とアジピン酸20部と
ジブチルチンオキサイド0.5部をトルエン中で共重合
させて得た数平均分子量58万のポリエステルを含有す
る溶液に、そのポリエステル100部あたり5部の多官
能イソシアネート化合物を加えて調製したポリエステル
系粘着剤を用いたほかは実施例1に準じて保持シートを
得た。
Example 2 A solution containing a polyester having a number average molecular weight of 580,000 obtained by copolymerizing 80 parts of polycarbonate diol, 20 parts of adipic acid and 0.5 part of dibutyltin oxide in toluene was mixed with 100 parts of the polyester. A holding sheet was obtained in the same manner as in Example 1 except that a polyester-based pressure-sensitive adhesive prepared by adding 5 parts of a polyfunctional isocyanate compound was used.

【0022】実施例3 アクリル酸ブチル90部とアクリロニトリル5部とアク
リル酸5部をトルエン中で共重合させて得た数平均分子
量50万のアクリル系共重合体を含有する溶液に、その
アクリル系共重合体100部あたり50部の多官能アク
リル系モノマーと5部の多官能イソシアネート化合物と
5部の光重合開始剤を加えてアクリル系粘着剤を調製
し、それを厚さ70μmのポリ塩化ビニルフィルムの片
面に塗工し130℃で3分間加熱して厚さ15μmの粘
着層を形成した後、それを80W/cm2の高圧水銀灯の
下で60秒間放置して紫外線処理し、保持シートを得
た。
Example 3 A solution containing an acrylic copolymer having a number average molecular weight of 500,000 obtained by copolymerizing 90 parts of butyl acrylate, 5 parts of acrylonitrile, and 5 parts of acrylic acid in toluene was added to the acrylic copolymer. An acrylic pressure-sensitive adhesive was prepared by adding 50 parts of a polyfunctional acrylic monomer, 5 parts of a polyfunctional isocyanate compound, and 5 parts of a photopolymerization initiator per 100 parts of the copolymer, and then preparing an acrylic pressure-sensitive adhesive having a thickness of 70 μm. After coating on one side of the film and heating at 130 ° C. for 3 minutes to form an adhesive layer having a thickness of 15 μm, it was left under a high-pressure mercury lamp of 80 W / cm 2 for 60 seconds to be subjected to ultraviolet treatment, and the holding sheet was treated. Obtained.

【0023】実施例4 アクリル酸ブチル90部とアクリロニトリル5部とアク
リル酸5部をトルエン中で共重合させて得た数平均分子
量50万のアクリル系共重合体を含有する溶液に、その
アクリル系共重合体100部あたり10部のウレタンオ
リゴマーと5部の多官能イソシアネート化合物と5部の
光重合開始剤を加えてアクリル系粘着剤を調製し、それ
を厚さ70μmのポリ塩化ビニルフィルムの片面に塗工
し130℃で3分間加熱して厚さ15μmの粘着層を形
成した後、それを80W/cm2の高圧水銀灯の下で10
秒間放置して紫外線処理し、保持シートを得た。
Example 4 A solution containing an acrylic copolymer having a number average molecular weight of 500,000 obtained by copolymerizing 90 parts of butyl acrylate, 5 parts of acrylonitrile, and 5 parts of acrylic acid in toluene was added to the acrylic copolymer. An acrylic pressure-sensitive adhesive was prepared by adding 10 parts of a urethane oligomer, 5 parts of a polyfunctional isocyanate compound, and 5 parts of a photopolymerization initiator per 100 parts of a copolymer, and then preparing one side of a 70 μm-thick polyvinyl chloride film. And heated at 130 ° C. for 3 minutes to form an adhesive layer having a thickness of 15 μm, which was then dried under a high pressure mercury lamp of 80 W / cm 2 for 10 minutes.
After standing for 2 seconds, ultraviolet treatment was performed to obtain a holding sheet.

【0024】比較例1 アクリル酸ブチル90部とアクリロニトリル5部とアク
リル酸5部をトルエン中で共重合させて得た数平均分子
量50万のアクリル系共重合体を含有する溶液に、その
アクリル系共重合体100部あたり100部のウレタン
オリゴマーと5部の多官能イソシアネート化合物を加え
て調製したアクリル系粘着剤を用いたほかは実施例1に
準じて保持シートを得た。
Comparative Example 1 A solution containing an acrylic copolymer having a number average molecular weight of 500,000 obtained by copolymerizing 90 parts of butyl acrylate, 5 parts of acrylonitrile and 5 parts of acrylic acid in toluene was added to the acrylic copolymer. A holding sheet was obtained in the same manner as in Example 1 except that an acrylic pressure-sensitive adhesive prepared by adding 100 parts of a urethane oligomer and 5 parts of a polyfunctional isocyanate compound per 100 parts of a copolymer was used.

【0025】比較例2 アクリル酸ブチル90部とアクリル酸10部をトルエン
中で共重合させて得た数平均分子量30万のアクリル系
共重合体を含有する溶液に、そのアクリル系共重合体1
00部あたり30部の可塑剤と5部の多官能イソシアネ
ート化合物を加えて調製したアクリル系粘着剤を用いた
ほかは実施例1に準じて保持シートを得た。
COMPARATIVE EXAMPLE 2 A solution containing an acrylic copolymer having a number average molecular weight of 300,000 obtained by copolymerizing 90 parts of butyl acrylate and 10 parts of acrylic acid in toluene was added to the acrylic copolymer 1
A holding sheet was obtained according to Example 1, except that an acrylic pressure-sensitive adhesive prepared by adding 30 parts of a plasticizer and 5 parts of a polyfunctional isocyanate compound per 00 parts was used.

【0026】評価試験 回路パターンを形成した直径4インチの半導体ウエハを
裏面研磨処理して厚さ0.25mmとしたものを、実施
例、比較例で得た保持シートで接着固定し、それをダイ
シング装置(ディスコ社製、2S/8)にて、ダイシン
グ速度100mm/秒、ダイシングブレード(ディスコ社
製、2050HFDD)の回転数4万rpm、保持シート
切込み深さ30μmの条件でフルカットし、3mm×3mm
のチップに切断した。
Evaluation Test A semiconductor wafer having a diameter of 4 inches, on which a circuit pattern was formed, was polished on the back surface to a thickness of 0.25 mm, and was adhered and fixed with the holding sheets obtained in Examples and Comparative Examples, and then diced. Using a device (manufactured by Disco, 2S / 8), the dicing speed is 100 mm / sec, the number of rotations of a dicing blade (manufactured by Disco, 2050HFDD) is 40,000 rpm, and the cutting depth of the holding sheet is 30 μm. 3mm
Cut into chips.

【0027】次に、得られたチップの切断面を観察し、
深さ方向に75μm以上の欠け又は亀裂のあるものを不
良品と判定し、良品の歩留りを調べた。その結果を次表
に示した。なお表には粘着層の0℃と10℃における貯
蔵弾性率も示した。
Next, the cut surface of the obtained chip was observed,
A chip having a chip or crack of 75 μm or more in the depth direction was determined to be defective, and the yield of a non-defective article was examined. The results are shown in the following table. The table also shows the storage elastic modulus of the adhesive layer at 0 ° C. and 10 ° C.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 0〜10℃の範囲における貯蔵弾性率が
3×106〜1×1010dyn/cm2の範囲にある粘着層を
支持シートに付設してなることを特徴とする半導体ウエ
ハ保持シート。
1. A semiconductor wafer comprising an adhesive layer having a storage elastic modulus in a range of 0 to 10 ° C. in a range of 3 × 10 6 to 1 × 10 10 dyn / cm 2 attached to a support sheet. Holding sheet.
【請求項2】 請求項1において、粘着層の厚さが1〜
50μmである半導体ウエハ保持シート。
2. The method according to claim 1, wherein the thickness of the adhesive layer is 1 to 1.
A semiconductor wafer holding sheet having a thickness of 50 μm.
JP9059796A 1997-02-26 1997-02-26 Semiconductor wafer holding sheet Pending JPH10242086A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9059796A JPH10242086A (en) 1997-02-26 1997-02-26 Semiconductor wafer holding sheet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9059796A JPH10242086A (en) 1997-02-26 1997-02-26 Semiconductor wafer holding sheet

Publications (1)

Publication Number Publication Date
JPH10242086A true JPH10242086A (en) 1998-09-11

Family

ID=13123608

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9059796A Pending JPH10242086A (en) 1997-02-26 1997-02-26 Semiconductor wafer holding sheet

Country Status (1)

Country Link
JP (1) JPH10242086A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002155249A (en) * 2000-11-22 2002-05-28 Mitsui Chemicals Inc Adhesive tape for processing wafer and method for producing the same and method for using the same
JP2002203816A (en) * 2000-12-28 2002-07-19 Nitto Denko Corp Adhesive sheet for dicing
JP2002235055A (en) * 2001-02-13 2002-08-23 Nitto Denko Corp Adhesive sheet for dicing
WO2003083002A1 (en) * 2002-03-28 2003-10-09 Mitsui Chemicals, Inc. Pressure sensitive adhesive film for protection of semiconductor wafer surface and method of protecting semiconductor wafer with the pressure sensitive adhesive film
US6730595B2 (en) * 2000-12-12 2004-05-04 Mitsui Chemicals, Inc. Protecting method for semiconductor wafer and surface protecting adhesive film for semiconductor wafer used in said method
KR100735720B1 (en) * 2004-04-28 2007-07-06 미쓰이 가가쿠 가부시키가이샤 Surface protecting film for semiconductor wafer and method of protecting semiconductor wafer using the same
WO2009126544A1 (en) * 2008-04-08 2009-10-15 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University Assemblies and methods for reducing warp and bow of a flexible substrate during semiconductor processing
JP2009260332A (en) * 2008-03-26 2009-11-05 Furukawa Electric Co Ltd:The Adhesive tape with antistatic property for fixing semiconductor wafer
JP2012054432A (en) * 2010-09-01 2012-03-15 Nitto Denko Corp Pressure-sensitive adhesive sheet for semiconductor wafer protection
JP2012054431A (en) * 2010-09-01 2012-03-15 Nitto Denko Corp Pressure-sensitive adhesive sheet for semiconductor wafer protection
KR101261045B1 (en) 2002-06-10 2013-05-03 닛토덴코 가부시키가이샤 Adhesive sheet for dicing glass substrate and method of dicing glass substrate

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7358158B2 (en) 2000-11-22 2008-04-15 Mitsui Chemicals, Inc. Wafer machining adhesive tape, and its manufacturing method and using method
WO2002042389A1 (en) * 2000-11-22 2002-05-30 Mitsui Chemicals,Inc. Wafer machining adhesive tape, and its manufacturing method and using method
JP2002155249A (en) * 2000-11-22 2002-05-28 Mitsui Chemicals Inc Adhesive tape for processing wafer and method for producing the same and method for using the same
US6730595B2 (en) * 2000-12-12 2004-05-04 Mitsui Chemicals, Inc. Protecting method for semiconductor wafer and surface protecting adhesive film for semiconductor wafer used in said method
JP2002203816A (en) * 2000-12-28 2002-07-19 Nitto Denko Corp Adhesive sheet for dicing
JP4623694B2 (en) * 2000-12-28 2011-02-02 日東電工株式会社 Dicing adhesive sheet
JP4674836B2 (en) * 2001-02-13 2011-04-20 日東電工株式会社 Dicing adhesive sheet
JP2002235055A (en) * 2001-02-13 2002-08-23 Nitto Denko Corp Adhesive sheet for dicing
US7238421B2 (en) 2002-03-28 2007-07-03 Mitsui Chemicals, Inc. Pressure sensitive adhesive film for protection of semiconductor wafer surface and method of protecting semiconductor wafer with the pressure sensitive adhesive film
WO2003083002A1 (en) * 2002-03-28 2003-10-09 Mitsui Chemicals, Inc. Pressure sensitive adhesive film for protection of semiconductor wafer surface and method of protecting semiconductor wafer with the pressure sensitive adhesive film
KR101261045B1 (en) 2002-06-10 2013-05-03 닛토덴코 가부시키가이샤 Adhesive sheet for dicing glass substrate and method of dicing glass substrate
KR100735720B1 (en) * 2004-04-28 2007-07-06 미쓰이 가가쿠 가부시키가이샤 Surface protecting film for semiconductor wafer and method of protecting semiconductor wafer using the same
JP2009260332A (en) * 2008-03-26 2009-11-05 Furukawa Electric Co Ltd:The Adhesive tape with antistatic property for fixing semiconductor wafer
WO2009126544A1 (en) * 2008-04-08 2009-10-15 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University Assemblies and methods for reducing warp and bow of a flexible substrate during semiconductor processing
US8685201B2 (en) 2008-04-08 2014-04-01 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Assemblies and methods for reducing warp and bow of a flexible substrate during semiconductor processing
JP2012054432A (en) * 2010-09-01 2012-03-15 Nitto Denko Corp Pressure-sensitive adhesive sheet for semiconductor wafer protection
JP2012054431A (en) * 2010-09-01 2012-03-15 Nitto Denko Corp Pressure-sensitive adhesive sheet for semiconductor wafer protection

Similar Documents

Publication Publication Date Title
CN1173000C (en) Pressure sensitive adhesive sheets for bonding wafers
JP5302951B2 (en) Adhesive sheet
TWI398501B (en) Adhesive sheet for dicing and processing method of workpiece using the adhesive sheet
JP4875414B2 (en) Adhesive film for semiconductor wafer back grinding and semiconductor wafer back grinding method using the same
JP6018730B2 (en) Dicing sheet and semiconductor chip manufacturing method
KR101029235B1 (en) Adhesive sheet for dicing and dicing method
TWI459455B (en) Adhesive sheet for grinding back surface of semiconductor wafer and method for grinding back surface of semiconductor wafer using the same
JP4674836B2 (en) Dicing adhesive sheet
JP2013120805A (en) Adhesive sheet for wafer processing and method for processing semiconductor wafer using sheet
JPH10242086A (en) Semiconductor wafer holding sheet
JP2004186429A (en) Adhesive tape
JP2004006746A (en) Adhesive film for protecting front surface of semiconductor wafer and protecting method for semiconductor wafer using the adhesive film
JP4623694B2 (en) Dicing adhesive sheet
JPH07105368B2 (en) Adhesive sheet for semiconductor wafer dicing
JP2001123139A (en) Adhesive tape for semiconductor processing use
TWI809030B (en) Sheet material for workpiece processing and method of manufacturing the processed workpiece
JPH09165558A (en) Tacky film for protecting semiconductor wafer and surface protection using the same
JP2661950B2 (en) Radiation-curable adhesive tape for fixing semiconductor wafers
CN102031072A (en) Pressure-sensitive adhesive sheet for retaining elements and method of producing elements
JPH10321563A (en) Semiconductor wafer-holding sheet and semiconductor chip formation method
JPWO2020100491A1 (en) Work sheet
JPH1161065A (en) Pressure-sensitive adhesive sheet for semiconductor wafer
JP3601892B2 (en) Adhesive film for backside grinding of semiconductor wafer and method of using the same
JPH09153471A (en) Adhesive film for dicing semiconductor wafer and use thereof
JP3775884B2 (en) Adhesive film for semiconductor wafer back grinding and semiconductor wafer back grinding method

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20061121

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20070403