JPH1022290A - Method and device for producing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve in-plane uniformity for a plurality of wafers by almost fixing the quantity of heat to be applied to each wafer by performing heat treatment to the plurality of wafers in the heat treatment area where the temperature distribution of lowering the temperature toward the forward moving direction is set. SOLUTION: Before the plurality of wafers 8 move to a high-temperature heat treatment area 5, a regenerative panel 10 is heated to high temperature and next, in a low-temperature area 5b where the temperature distribution of lowering the temperature in the forward moving direction is set, the each wafer 8 is heated inside the counter space of the regenerative panel 10 while using a heater 7 and the regenerative panel 10 as heat sources. Namely, the regenerative panel 10 heated to the high temperature from 950 deg.C to 953 deg.C heats the wafer 8 as the radiation heat source at this temperature and together with heating from the heater 7, the temperature of wafer 8 from their central parts to peripheral part is increased to heat treatment temperature in a short time so that the quantity of heat to be applied to the wafer 8 can be almost fixed. Thus, in-plane uniformity for the wafer 8 can be improved.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method and an apparatus for manufacturing a semiconductor device. In the present invention, the “semiconductor device” is, for example, a memory or logic circuit IC such as silicon or a compound semiconductor, a thin film transistor (TFT transistor) IC, or the like.
The “wafer” is, for example, a single crystal substrate, a glass substrate, or the like. Further, the rapid heat treatment referred to in the present invention is a technique usually called Rapid Thermal Processing (RTP), and is described in Rapid Th.
ermal Processing (ACADEMIC PRESS INC). As described in this book, it is important to make the characteristics related to the performance of the semiconductor device such as the film thickness, the impurity concentration, and the diffusion depth uniform on the wafer surface. In the present invention, "manufacturing" means, for example, (a) a film or a layer of a semiconductor material, an insulating material, a metal, a compound of a metal and silicon, an alloy, a superconducting material, etc., formed on a wafer by CVD using a reactive gas. (B) A method in which a film or layer of a semiconductor material, an insulating material, a metal, a superconducting material, or the like is formed on a wafer by a direct reaction between a reaction gas and a single crystal substrate or a material on the substrate (for example, bulk silicon , SiO ₂ film formed by reacting polysilicon, S
iON film, SiN film, thin film formation, such as a SiON film, and ultrathin nitriding processing for 1 to 10 Angstroms nitriding the surface of the SiO ₂ film), (c) Ar, the He, the presence of an atmosphere gas including N ₂ (D) High dielectric or ferroelectric such as BST (oxide of barium strontium titanate), STO (oxide of strontium titanate), Ta ₂ O ₅ film, etc. Annealing to improve film quality of body thin film, (e) WSi ₂ , Ti
Annealing for lowering the resistance of Si ₂ film, etc.
Annealing for densification and flattening of SiO ₂ , PSG, BPSG, SiN, SiON films, etc., (g) PZT
(Oxide of lead zirconium titanate), Y-1, BST
Such as annealing of a ferroelectric material film, and activation of a (h) ion implantation layer. In (h), it is important to suppress the spread of the impurities as much as possible to increase the activation rate of the impurities.

[0002] The present invention also relates to a semiconductor device manufacturing apparatus for performing the above method using a vertical and horizontal hot wall type heating furnace.

[0003]

2. Description of the Related Art U.S. Pat.
No. 557 (hereinafter referred to as "US patent") discloses a double-pipe semiconductor manufacturing apparatus for performing RTP using a vertical hot wall heating furnace having excellent heat uniformity. FIG. 9 illustrates a method of heat-treating a single wafer by the semiconductor manufacturing apparatus disclosed in the US patent. In the figure, 1 is a quartz reaction tube composed of an outer tube 1a and an inner tube 1b, and 2 is an inner tube 1
b, an exhaust pipe opening at the bottom of the outer pipe 1a; 3, an exhaust pipe 1 opening at the bottom of the outer pipe 1a;
an annular flow path formed between the inner pipe 1a and the inner pipe 1b for discharging the reaction gas, 5 is a heating furnace using an electric resistance heater, 6 is a jig for holding and moving the wafer (hereinafter referred to as "jig"), 8
Denotes a wafer, 30 denotes a magnet coil or a permanent magnet, 31 denotes a driving mechanism, and 33 denotes a guide member for moving the wafer holding jig up and down together with the shielding plate 11 and the mounting plate 12. The wafer 8 is once held at a low temperature (for example, 750 ° C.) where the diffusion length is short,
Next, it is held for a predetermined short time at the position shown in the drawing, and comes into contact with a reaction gas flowing upward in the inner tube 1b to cause a predetermined reaction,
Immediately after the reaction, the wafer is moved by the wafer holder 6 to a low-temperature region at the lower part of the furnace.

Ion implantation conditions for a 150 mm diameter Si wafer: BF2, 3.0E15 / cm ² , 2.30 keV
And then annealed at 950 ° C. for 2 minutes after holding at a low temperature by the method described above with reference to FIG.
Sheet resistance is about 220Ω and its in-plane distribution is ± 1%
(Average value of 5 sheets). When the same annealing was performed at 850 ° C. for 120 minutes using a normal RTP method without holding at a low temperature, the sheet resistance was 310Ω. Similarly, when the annealing was performed at 850 ° C. for 30 minutes, the sheet resistance was 400Ω. In these cases, the in-plane distribution of sheet resistance was about 1%.

According to the RTP method proposed by the present applicant in Japanese Patent Application Laid-Open No. Hei 8-45861, a plurality of wafers placed horizontally are placed in a vertical hot-wall type heating furnace having a low temperature region and a heat treatment region. In a method of manufacturing a semiconductor device in which a wafer is advanced from the low-temperature region to a heat treatment region, and the wafer is rapidly heat-treated in the heat treatment region and then returned to the low-temperature region, the wafer is placed in a furnace set at a temperature higher than a desired temperature. It is possible to reduce the heating time and improve the RTP characteristics by returning the wafer to the low temperature region before the wafer reaches the desired temperature.

[0006]

Thereafter, the present inventor further proceeded with experiments and considered the temperature distribution of the wafer in a hot wall type heating furnace. When a plurality of wafers are loaded in the soaking region where the heat treatment is performed, a time difference occurs between the wafer that first enters the soaking region and the wafer that finally enters the soaking region. Subsequently, after a short heat treatment in the soaking area, the wafer is moved toward the low temperature area in the direction opposite to the charging direction, and the wafer that first enters the soaking area exits the slowest soaking area, Since the wafer that finally entered the soaking region exits the soaking region earliest, a time lag also occurs. The pattern rule is 0.25 μm (256M-D
RAM) or more, and when a relatively long holding time is allowed, the time difference does not become a practical problem.
With finer pattern rules, differences in dwell time between wafers in a high-temperature region impair the uniformity of a plurality of wafers processed in the same lot, causing variations in the electrical characteristics of the semiconductor device, resulting in defective semiconductor devices. The rate increases.

[0007] In the case of heat treatment of one wafer, FIG.
When the wafer surface is positioned almost perpendicularly to the traveling direction of the wafer as shown in FIG. 0, uniformity within the wafer surface is realized. Therefore, the method of arranging and moving the wafer shown in FIG. 10 is performed in a vertical furnace and / or a horizontal furnace. It is usual to choose. on the other hand,
When the wafer surface is placed substantially parallel to the traveling direction of one wafer as shown in FIG. 11, the problem of wafer non-uniformity as described in the preceding paragraph occurs in the surface of one wafer. However, as an advantage, when a wafer is transferred from one jig to another, it is easy to transfer the wafer between jigs.

Accordingly, an object of the present invention is to provide a method and an apparatus capable of improving in-plane uniformity of a plurality of wafers processed in the same lot in RTP processing. Still another object of the present invention is to provide a method and an apparatus capable of improving in-plane uniformity of one wafer in a single wafer processing RTP method in which a wafer surface is substantially parallel to a wafer traveling direction.

[0009]

According to the present invention, there is provided a method according to the present invention, wherein a plurality of wafers are advanced to a heat treatment area in a horizontal or vertical hot wall type heating furnace, and the temperature is rapidly increased. Rapid heat treatment in the heat treatment area,
Thereafter, in the method of manufacturing a semiconductor device in which the plurality of wafers are retracted from the heat treatment region and quenched, the plurality of wafers are heat-treated in the heat treatment region in which the temperature distribution in which the temperature decreases in the forward direction is set. A method of manufacturing a semiconductor device, characterized in that the amount of heat applied to the semiconductor device is made substantially constant (hereinafter referred to as "first invention method").
In a method for manufacturing a semiconductor device in which one or more wafers are rapidly heat-treated in a high-temperature heat treatment region in a horizontal hot-wall heating furnace, a second low-temperature region different from the first low-temperature region Is provided so that the heat treatment region is located between the two low temperature regions, and the one or more wafers are uniformly heated in the first low temperature region by the first jig, and then rapidly heated to the high temperature region. Then, following the rapid heat treatment, one or more wafers are rapidly moved from the heat treatment temperature to a second low-temperature region and rapidly cooled, and then transferred to a second jig. Replaced one
A method of manufacturing a semiconductor device (hereinafter, referred to as a "second invention method") in which one or a plurality of wafers are soaked at a predetermined temperature in a second low-temperature region. A method of moving one or more wafers placed in a hot-wall type heating furnace to a heat treatment area and rapidly raising the temperature, and then holding the wafer in the high temperature area to perform a rapid heat treatment, Heating the heat storage plate having a reduced thickness to a heat treatment temperature in advance, and then performing heat treatment by placing one surface of the wafer very close to the heat storage plate to make the amount of heat applied to each wafer substantially constant. This is a method for manufacturing a semiconductor device (hereinafter, referred to as “third invention method”).

[0010] Furthermore, the apparatus according to the present invention for achieving the above object is a method for advancing a plurality of wafers to a heat treatment area in a horizontal or vertical hot wall type heating furnace and rapidly retreating the wafer from the heat treatment area. An apparatus for manufacturing a semiconductor device by rapid thermal processing comprising a jig for holding a plurality of wafers in a region, comprising means for setting a temperature distribution in which the temperature decreases in a forward direction of the jig in the thermal processing region. A semiconductor device manufacturing apparatus (hereinafter, referred to as a "first invention apparatus") having a first low-temperature region for uniformly heating one or a plurality of wafers at a predetermined temperature and a heat treatment region. An apparatus for manufacturing a semiconductor device by a rapid heat treatment provided with a first jig for moving one or more wafers from a low temperature region to a heat treatment region at a high speed in a hot wall type heating furnace. And forming a second low-temperature region different from the first low-temperature region such that the heat-treated region is located between the two low-temperature regions, and one or more of the heat-treated regions are soaked in the second low-temperature region. An apparatus for manufacturing a semiconductor device by rapid thermal processing, comprising a second jig for taking out a single wafer (hereinafter referred to as "second invention apparatus"), and disposed in a hot wall type heating furnace. In a semiconductor device manufacturing apparatus provided with a jig for moving and holding one or more wafers to a heat treatment region, a heat storage plate having a reduced thickness in a moving direction of the wafer is moved to a heat treatment temperature region. A semiconductor device manufacturing apparatus (hereinafter, referred to as "third invention apparatus") provided with the semiconductor device. Hereinafter, the present invention will be described in detail.

In the first to third aspects of the present invention, the rapid temperature rise refers to a temperature rise rate of an ordinary furnace which is not RTP and is 1 to 10 times.
The speed is considerably faster than the temperature of the conventional jig moving mechanism.
c. The same applies to quenching, but heat radiation is less efficient than heating.
c. In the first to third invention apparatuses, the rapid movement of the wafer is a normal moving speed other than the RTP.
The speed is much faster than 0 to 200 mm / min.
The range is 0 to 200 mm / sec.

In the method and apparatus according to the first invention and the method and apparatus according to the third invention, the material formed on the surface of the Si single crystal wafer may be annealed at a low temperature of, for example, 650 ° C., so that the low temperature preliminary holding of the wafer is omitted. May be. On the other hand, the RTP temperature of the Si single crystal wafer is 800 ° C.
In the case of the above high temperature, in order to prevent a slip line or remove a processing strain, it is necessary to preliminarily maintain the temperature at 700 ° C. or less, at which impurity diffusion hardly occurs. Also, R
In order to anneal the strain caused by the rapid RTP after the TP treatment, a low temperature may be maintained after the heat treatment.

The high temperature at which the RTP process is performed varies depending on the heat treatment method and the type of wafer, but is generally 800 ° C. or higher.
It is 1100 ° C or lower. For example, to activate an impurity implanted at a dose of 10 ⁴ / cm ² or more, 900
Heat treatment at -950 ° C. or higher is performed. Examples of the low-temperature heat treatment include a heat treatment for forming a metal contact and a heat treatment at 700 ° C. or lower for CVD, in addition to the heat treatment for the Si single crystal wafer described above. The holding at a high temperature is carried out for a time during which the diffusion depth of the impurity can be ignored based on the pattern rule of the semiconductor device as a reference.

Hereinafter, mainly the low temperature region and the heat treatment (high temperature)
A method in which a plurality of wafers are once held at a low temperature in a low-temperature region of a hot wall type heating furnace having a region, and a plurality of wafers are moved at high speed to a heat treatment region, and a high temperature region in which the hot wall type heating furnace performs rapid heat treatment. In addition to the above, a semiconductor manufacturing apparatus having a low-temperature region for temporarily holding a wafer will be described. Here, the “region” is a section of the furnace having a length sufficient to uniformly heat one or a plurality of wafers to a predetermined temperature. The predetermined temperature at which the wafer is soaked is usually the temperature of the region, but the applicant has disclosed in Japanese Patent Application Laid-Open No. 8-45861.
In some cases, the temperature may be lower than the temperature in the high-temperature region as proposed in Japanese Patent Application Laid-Open Publication No. H11-157,086.

In the present invention, a well-known technique in a hot wall type heating furnace, for example, a furnace structure provided with a reaction tube such as a single tube or a double tube, holding a wafer and advancing a wafer in a non-contact manner with the inside of the furnace. Jig (table for holding wafer,
For example, a technique such as a fork, a gas inlet, and an exhaust port provided between the heat treatment region and the low temperature region may be employed. In addition, wafers processed under abnormal initial or final conditions (temperature instability, gas concentration instability, etc.) occurring at both ends of a batch of a plurality of wafers should be discarded as dummy wafers. Can also. Also, the number of wafers is the same as before,
In a vertical apparatus, 5 to 10 sheets can be batch-processed because the height is limited, and in a horizontal apparatus, 10 to 25 sheets can be processed in order to easily obtain a soaking section length of 500 to 800 mm. The method of placing the wafer is arbitrary such as a vertical direction and a horizontal direction.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment Method and Apparatus FIG. 1 shows an example of the temperature distribution of a horizontal hot wall type heating furnace according to these inventions.
It is held and soaked in a low temperature range of ± 0.5 to ± 1.0 ° C. of 00 ° C., and then moves at a speed of, for example, 100 mm per second, and passes through an intermediate region to a rapid heat treatment region of 950 ° C.
To the high temperature region of For simplicity of description, ten 6-inch wafers are arranged in a face-to-face relationship with faces facing each other at intervals of 30 mm (interval between front end and rear end of wafer-
270 mm), and advance to a high temperature region (soaking length 400 mm) at about 100 mm / sec. In this case, the last tenth wafer reaches the high temperature region approximately 3 sec after the first wafer advances to the high temperature region. Similarly, when the wafer is returned from the high temperature region to the low temperature region, it takes about 3 seconds.
A time difference of ec occurs, resulting in a total time difference of 6 sec. However, the difference in resistance between wafers can be suppressed to 1% or less due to the temperature gradient of 4 ° C. for 400 mm shown in FIG. The smaller the time difference, the smaller the temperature difference between a plurality of wafers.

In the temperature range between 900 ° C. and 1000 ° C., when the temperature rises by 50 ° C., the thermal budget (th
ermal budget) —the time for keeping the diffusion depth constant as a function of the complementary error function—is approximately ５ times. As shown in FIG. 1, by setting the temperature distribution on the side where the wafer is moved in and out by 4 ° C. and setting it to 954 ° C. and the front end to 950 ° C., the thermal budget caused by the time difference of several seconds described above is set. The difference can be compensated.

The horizontal hot wall furnace has a high temperature region of about 600 mm by changing the high temperature region to a multi-zone or changing the thickness of the heat insulating material of the furnace body.
It is easy to set a temperature gradient of ° C.

Although the temperature distribution can be set in the vertical hot-wall furnace in the same manner as in FIG. 1, heat is trapped in the upper part of the furnace due to convection and tends to be high, so that the temperature gradient is smaller than in the horizontal furnace. It is as small as 1 to 10 ° C. at 400 mm.

The first inventive method and apparatus + heat storage plate Figure 2 shows an embodiment of the present invention that combines horizontal hot-wall furnace and the heat storage plate. FIG. 3 is a diagram showing a cross section of the high temperature region in FIG. 2 for a portion inside the quartz tube. In the figure, reference numeral 10 denotes a heat storage plate which has been previously heated to a heat treatment temperature of 950 ° C., and after the heat storage plate 10 is soaked, the wafer 8 is cooled by a jig 20 described in detail in FIG. 10 and heat treated. On the jig 20, a wafer support 15 that is detachably supported is placed. The high-temperature heat treatment area 5 has three multi-zones 5a ₁ ,
5a ₂ and 5a ₃ , each of which is connected by a separate power supply and control circuit, a temperature distribution is set such that the temperature on the inlet side is high. The temperature distribution is measured by inserting a commercially available auto profiler in a position where there is no obstacle in the reaction tube, and slowly moving the tube at a speed of 2 to 3 cm / min in the axial direction of the tube. Numeral 35 denotes a gas inlet pipe having a blowout port 36 at a tip thereof, through which a gas such as N ₂ , Ar, He, O ₂ , N ₂ O, NH ₃ blows out in a horizontal direction. 37
Is a gas exhaust pipe.

As shown in FIG. 2, the heat storage plate 10 is a plate having a length of about 3.5 times the wafer diameter and a width of about 1.2 times the wafer diameter. Therefore, two heat storage plates 1
0, three wafers can be heated at the same time, and two wafers can be heated between the heat storage plates.
When two wafers face each other, six wafers can be heated simultaneously.

In the embodiment shown in FIG. 2, before the wafer 8 moves to the high temperature
Is heated to the high temperature, and the wafer 8 previously heated in the low temperature region 5b is heated by the heater 7 in the space facing the heat storage plate 10.
And the heat storage plate 10 is heated as a heat source. Therefore, the heat storage plate heated to a high temperature of 950 to 953 ° C. heats the wafer as a radiant heat source at this temperature, and in combination with the heating from the heater 7, the heat storage plate from the central portion to the peripheral portion of the wafer 8 can reach the heat treatment temperature in a very short time. Raise the temperature. Therefore,
Since the difference between the wafers in the heating time up to 950 ° C. is further reduced by using the heat storage plate together, the temperature gradient can be made smaller than 4 ° C. in FIG. When the heat treatment temperature is 700 ° C. or lower, heat transfer is dominated by conduction. However, when the wafer is arranged very close to the heat storage plate, the thickness of the gas layer existing between them becomes very thin, and the gas layer passes through the gas layer. Is efficiently conducted. Therefore, in the case of the low-temperature heat treatment, the wafer is also rapidly heated to the heat treatment temperature.

The dimensions of the heat storage plate (indicating the minimum diameter, width, etc.) are preferably substantially the same as or larger than the size of the wafer. The incident angle of the radiant heat from the heat storage plate covers a wide range from several degrees to about 180 °, and thus the entire surface of the wafer is uniformly heated at the same time. Therefore, the upper limit of the size of the heat storage plate is not limited, and may be arranged vertically between a pair of heat storage plates as twice or more the size of the wafer. However, since the length of the vertical heating furnace becomes long, it is not practical. Absent. But,
Two wafers may be arranged on the left and right. In the case of a horizontal heating furnace, the length of the factory is not so restricted as the height of the building, so that a heat storage plate having a size twice or more as large as a wafer can be used.

In the present invention, up to two wafers can be arranged between the heat storage plates. However, if the number of wafers becomes three, the intermediate wafers do not reach the radiant heat from the heat storage plates, so that the heat uniformity is not excellent.

The heat storage plate has a melting point sufficiently higher than the processing temperature,
Various metals and ceramics can be used as long as they do not emit a substance that causes contamination of the semiconductor device. Preferably, monocrystalline silicon, polycrystalline silicon, SiO ₂ , Si
C, carbon, metal silicide such as Si ₃ N ₄ , WSi ₂ , TiSi ₂ , W, Al ₂ O ₃ , AlN or BN is used. Also, the surface of a silicon plate or any other material may be coated with these substances, for example, Si ₃ N ₄ . However, a single crystal silicon wafer is a preferable heat storage plate material when processing a silicon wafer because it is high in purity and easy to obtain and process.

When selecting the above various substances, the same substance as the substance (for example, metal silicide) formed on the wafer surface by the heat treatment is used for the heat storage plate, or the property improvement treatment (for example, ion implantation) is performed on the wafer surface by the heat treatment. It is also preferable to use the same material (for example, polycrystalline silicon) for the heat storage plate as the material to be subjected to subsequent annealing.

It is preferable that the heat storage plate be subjected to heat treatment while holding the wafer substantially in the center thereof substantially in parallel with the heat storage plate.
Since the wafer moves at high speed between the heat treatment area and the low temperature area to realize RTP, the above-mentioned arrangement and holding of the wafer avoids interference and contact with the heat storage plate, and the control mechanism for moving the wafer holder becomes simple. Because. Heat storage plates and wafers are placed vertically in a vertical furnace (the upper and lower edges of the plate coincide with the vertical direction of the furnace), and in a horizontal furnace, they are placed vertically or horizontally (the direction of the entrance and exit of the furnace coincides with the surface direction of the plate). It is preferable that In the latter, the heat storage plate is arranged upright or horizontal or at an angle between these, but upright is preferred.

The thickness of a 6 to 8 inch wafer is usually 0.6
０．９0.9 mm. If it is estimated that the RTP time after the wafer is moved to the heat treatment region is 2-3 minutes, the thickness of the heat storage plate needs to be appropriately adjusted depending on the wafer interval, but is required if it is in the range of 1 to 10 mm. It can be adjusted to heat treatment conditions. However, even if the thickness of the heat storage plate is slightly increased or decreased outside this range, the time required for the heat storage plate to first reach a predetermined high temperature from room temperature is about 30 minutes,
Further, when the batch processing is repeated, the processing time does not decrease because the heating time and temperature are even shorter.

Second Embodiment Method and Apparatus FIG. 4 shows an embodiment in which the second invention method and apparatus are applied to a horizontal atmospheric pressure CVD apparatus. In FIG. 4, the wafer 8 is maintained in the first low-temperature region 5b at a temperature of, for example, 700 ° C. and is uniformly heated. Note that the wafer 8 is drawn larger than the actual size in order to make the drawing easier to see, but in order to ensure sufficient thermal uniformity, the low-temperature region 5b and each of the regions described below have a margin slightly larger than the sum of the wafer diameters. It is necessary to have. Although the wafer 8 is placed parallel to the moving direction, it may be perpendicular to the moving direction.

In the figure, reference numeral 20a denotes a jig for holding the wafer 8 by a known cantilever mechanism and moving the wafer 8 without contact with the reaction tube. The jig 20a is obtained by connecting a control mechanism, which will be described later, to a wafer mounting and guiding jig 21 having a reduced thickness on the tip side. The wafer mounting / guiding jig 21a arranges a set of two wafers 8 in four rows and three rows, that is, a total of 24 wafers, on the tip side 21a '.

The wafer mounting / guiding jig 21a is located at the front end 2
1a 'is formed in a plate shape, the rear end side 21a''is formed in a tubular body, and in the middle is a solid connecting portion whose cross section changes from circular to plate shape. As a result, the diameter of the heating furnace is reduced, and the power required for movement is also reduced.

Rear end side 2 of wafer mounting / guiding jig 21a
1a "has a collar 22a fixed at its end by shrink fitting or the like, and a protrusion 23 provided at the lower portion thereof.
The bolt 25a is connected to the chuck 25a. The chuck 25a is rotatably mounted with a worm gear 24a that meshes with the worm 26a.
As the 5a moves, the wafer mounting and guiding jig 21a
Also move forward and backward in the furnace. A holding portion 27a for holding the worm 26a at both ends is fixed to a worm gear 28a and moves as indicated by an arrow by the rotation of the worm 29a. As a result, the wafer 8 is loaded into the heating furnace. To avoid friction.

In FIG. 4, reference numeral 5a denotes a high-temperature heat treatment region having a temperature of, for example, 950.degree. The wafer 8 is transferred at a high speed to the high-temperature heat treatment area 5a by the jig 20a, and is held for a short time after the temperature is raised from 750 ° C. to 950 ° C. 5c is preferably lower than 5b, e.g.
Is a second low temperature region having a temperature of Second jig 20b
Of the first jig 20a.
When the first jig 20a has advanced to the second low-temperature region 5c, these (21)
a ', 21b) are located one above the other. Further, the second jig 20b can move up and down not only in the horizontal direction but also up and down, so that the wafer support 15 can be lifted from below. In addition, the first jig 20a may be of an up-and-down type as needed. A second jig 20b having the same structure as the jig 20a is arranged in the second low temperature region 5c. The wafer 8 that has been subjected to the rapid heat treatment in the high-temperature heat treatment region 5a is transferred to a second jig 20b and carried out of the furnace. Therefore, the top wafer 8a is first placed in the high-temperature heat treatment region 5
a, but to get out of the high temperature heat treatment area first,
There is no difference in thermal budget compared to other wafers, and uniformity between wafers is maintained.

The place where the wafer is transferred from the first jig 10a to the second jig 10b is in the second low temperature region 5c, the first low temperature region 5b, or the high temperature heat treatment region 5a. Delivery in a high-temperature region is more preferable in a low-temperature region because a temperature drop due to a part of a jig entering the jig may impair temperature uniformity. In FIG. 4, only one wafer can be heat-treated. In this case, the wafer 8 can be placed horizontally.

FIG. 5 illustrates a method of transferring from the first jig 20a to the second jig 20b. FIG.
(C) is hatched so that the positional relationship between each jig and the wafer 8 becomes clear. As can be seen from this figure, the first jig 20a supports it at the center of the wafer support 15 while the second jig 20b rises from below the support 15 and raises the wafer outside the jig 20a. Since the support 15 is supported and lifted to a level higher than 20a, the wafer can be transferred from the former to the latter. The wafer support 15 supports four rows of wafers 8 and has claws 15a for gripping the edge of each wafer 8 at three places so as to improve the rapid temperature rising characteristics of the wafers 8. ing.

It is also possible to interpose the heat storage plate described for the apparatus and method of the first invention between the wafers 8 in FIG.

Third Embodiment Method and Apparatus FIGS. 6 to 8 show an embodiment of the third invention method and apparatus. As shown in FIGS. 6 and 7, the wafer 8 is heat-treated between and near the heat storage plates 10 vertically arranged in the high-temperature heat treatment region 5a in the vertical hot wall heating furnace 1. In the figure, 13 is an arm fixed to the lifting rod 6 and receiving the wafer support 15, and 18 is a plurality of heat storage plates 1.
The beam 18 is fixed to the vertical plate 17 by penetrating the upper ends of the zero and supporting them.

As shown in FIG. 8, the heat storage plate 10 is hung at regular intervals by hooks 18 so that the upward direction, that is, the forward direction of the jig 6 is reduced. Therefore, when the jig 6 stops, the front end 8f of the wafer 8 is located at a position where the interval between the heat storage plates 10 is the widest, and the radiation heating effect by the heat storage plates is weakest. Therefore, the front end 8f of the wafer enters the space between the heat storage plates 10 first, but the thermal budget is almost the same as the rear end 8l which enters the space between the heat storage plates 10 at the latest time.

[0039]

As described above, according to the present invention, it is possible to reduce the variation in the thermal budget between wafers of a semiconductor device manufactured using a hot wall type heating furnace.

[Brief description of the drawings]

FIG. 1 is a diagram showing an example of a temperature distribution in a first method and apparatus according to the present invention.

FIG. 2 is a view showing an embodiment of a horizontal furnace in the case where a heat storage plate is used in combination in the method and apparatus of the first invention of the present invention.

FIG. 3 is a partial cross-sectional view of FIG. 2;

FIG. 4 is a diagram of an embodiment of the second invention method and apparatus of the present invention.

FIG. 5 is an explanatory view of a method for transferring a wafer between jigs in the method and apparatus according to the second invention of the present invention.

FIG. 6 is a view showing an embodiment of a vertical furnace according to the third invention method and apparatus of the present invention.

FIG. 7 is a partial cross-sectional view of FIG.

FIG. 8 is a view showing one embodiment of a heat storage plate used in FIG.

FIG. 9 is a view showing a known vertical hot wall heating furnace for RTP.

FIG. 10 is a view in which a wafer is positioned substantially perpendicular to the traveling direction of one wafer.

FIG. 11 is a diagram in which a wafer is positioned substantially parallel to the traveling direction of one wafer.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Quartz reaction tube 2 Reaction gas inflow tube 3 Exhaust tube 4 Annular flow path 5 Heating furnace 5a Heat treatment region 5b Low temperature region 6 Jig 7 Heater 8 Wafer 10 Heat storage plate 20 Jig 35 Gas introduction tube 36 Outlet 37 Gas exhaust tube

Claims (24)

[Claims] In a horizontal or vertical hot-wall heating furnace, a plurality of wafers are advanced to a heat treatment region and rapidly heated, and then subjected to rapid heat treatment in the heat treatment region, and then receded from the heat treatment region. In the method for manufacturing a semiconductor device to be cooled and quenched, the amount of heat applied to each wafer by heat-treating the plurality of wafers in the heat treatment region in which the temperature distribution in which the temperature decreases in the forward direction is set is substantially reduced. A method for manufacturing a semiconductor device, characterized in that the method is constant. 2. The horizontal or vertical hot wall heating furnace has the heat treatment region having a high temperature and a low temperature region capable of soaking the plurality of wafers at a predetermined temperature. Performing rapid heat treatment after soaking the wafer in the low-temperature region, then soaking again in the low-temperature region, and performing the rapid temperature rise and rapid cooling between the low-temperature region and the heat treatment region. A method for manufacturing a semiconductor device according to claim 1. 3. A heat storage plate facing the heat storage plate is heated in advance at a heat treatment temperature in a heat treatment region in which the temperature distribution is set, and then one or two wafers face the heat storage plate between the opposing surfaces of the heat storage plate. 3. The method according to claim 1, wherein the heat treatment is performed at the heat treatment temperature. 4. A method for manufacturing a semiconductor device in which one or a plurality of wafers are rapidly heat-treated in a high-temperature heat treatment region in a horizontal hot-wall type heating furnace, wherein the second and third wafers are different from the first low-temperature region. A low-temperature region is provided such that the heat-treated region is located between the two low-temperature regions, and the one or more wafers are uniformly heated in the first low-temperature region by a first jig, and then to the heat-treated region. Moving and rapidly raising the temperature, and then following the rapid heat treatment, rapidly moving and rapidly cooling one or more wafers from the heat treatment temperature to a temperature in a second low temperature region; A method for manufacturing a semiconductor device, comprising: equalizing one or more wafers transferred to a tool in a second low-temperature region. 5. The semiconductor device according to claim 4, wherein one or more wafers are transferred from the first jig to the second jig in the first or second low temperature region. Manufacturing method. 6. An opposite heat storage plate is preheated at a heat treatment temperature in a heat treatment region in which the temperature distribution is set, and then one or two wafers are opposed to the heat storage plate between the opposing surfaces of the heat storage plate. 6. The method according to claim 4, wherein the heat treatment is performed at the heat treatment temperature. 7. A method for moving a plurality of wafers disposed in a horizontal or vertical hot wall type heating furnace to a heat treatment area and rapidly raising the temperature, and thereafter holding the wafers in the heat treatment area to perform a rapid heat treatment, Preheat the heat storage plate whose thickness is reduced in the moving direction of the wafer to a heat treatment temperature,
A method of manufacturing a semiconductor device, comprising: arranging one surface of the wafer very close to the heat storage plate and performing a rapid heat treatment to make the amount of heat applied to each wafer substantially constant. 8. The horizontal or vertical hot wall type heating furnace has the heat treatment region having a high temperature and a low temperature region in which the plurality of wafers can be uniformly heated to a predetermined temperature. 8. The method of manufacturing a semiconductor device according to claim 7, wherein the plurality of wafers are once held, and then moved to the heat treatment region and rapidly heated. 9. The thermal storage plate according to claim 1, wherein at least a surface of the thermal storage plate is formed of single-crystal silicon, polycrystalline silicon, SiO ₂ , SiC,
Carbon, Si ₃ N ₄ , metal silicide, W, Al ₂ O ₃ ,
4. The method according to claim 3, wherein the material is made of AlN or BN.
9. The method for manufacturing a semiconductor device according to claim 6, 7, or 8. 10. The method of manufacturing a semiconductor device according to claim 9, wherein the same substance as the substance formed on the wafer surface by said rapid heat treatment is used on at least the surface of the heat storage plate. 11. The method of manufacturing a semiconductor device according to claim 9, wherein the same material as the material whose property is improved by heat treatment on the wafer surface is used on at least the surface of the heat storage plate. 12. The heat storage plate according to claim 9, wherein the heat storage plate has a thickness of about 1 to 10 mm.
13. The method for manufacturing a semiconductor device according to claim 1. 13. A plurality of wafers are rapidly advanced into and retracted from a horizontal or vertical hot wall type heating furnace to a heat treatment region, and a plurality of wafers are held in the heat treatment region. An apparatus for manufacturing a semiconductor device by rapid thermal processing provided with a jig, wherein a means for setting a temperature distribution in which the temperature decreases in a forward direction of the jig is set in the heat treatment region. Manufacturing equipment. 14. A horizontal or vertical hot wall type heating furnace further comprising a plurality of heat storage plates arranged opposite to the heat treatment region, and wherein the jig holds one or two wafers between the opposed heat storage plates. 14. The apparatus for manufacturing a semiconductor device according to claim 13, wherein the apparatus is transported. 15. A horizontal or vertical hot wall type heating furnace has a low temperature region for equalizing a plurality of wafers at a predetermined temperature, and the jig moves the plurality of wafers from the heat treatment region to the low temperature region. 15. The method according to claim 13, wherein the vehicle is rapidly advanced and then rapidly retracted to a low temperature region.
An apparatus for manufacturing a semiconductor device as described in the above. 16. A method for heat-treating one or more wafers from a low-temperature region in a horizontal hot-wall heating furnace having a first low-temperature region and a heat-treatment region for equalizing one or more wafers at a predetermined temperature. An apparatus for manufacturing a semiconductor device by rapid thermal processing provided with a first jig that moves at high speed to a region, wherein a second low-temperature region different from the first low-temperature region is located between the two low-temperature regions. A second jig formed to take out one or more wafers formed and soaked in a second low-temperature region, wherein at least one of the jigs can be moved up and down. Semiconductor device manufacturing equipment by rapid heat treatment. 17. A plurality of heat storage plates are arranged opposite to each other in the heat treatment area, and the first jig includes one or two heat storage plates.
17. The apparatus for manufacturing a semiconductor device according to claim 16, wherein the plurality of wafers are transferred between the opposed heat storage plates. 18. The apparatus according to claim 17, wherein the first jig is movable to the second low temperature region. 19. A device for manufacturing a semiconductor device by rapid thermal processing comprising a jig for moving and holding a plurality of wafers arranged in a hot wall type heating furnace to a thermal processing area at a high speed, wherein the moving direction of the wafers An apparatus for manufacturing a semiconductor device, comprising a heat storage plate having a reduced thickness in a heat treatment temperature region. 20. The apparatus for manufacturing a semiconductor device according to claim 13, wherein said temperature distribution setting means is a multi-zone of a furnace. 21. The apparatus for manufacturing a semiconductor device according to claim 13, wherein said temperature distribution setting means is a heat insulator or a coolant for a furnace body. 22. The heat storage plate, wherein at least a surface of the heat storage plate is made of single-crystal silicon, polycrystal silicon, SiO ₂ , Si
C, carbon, Si ₃ N ₄ , metal silicide, W, Al ₂ O
_{3. The method according} to claim 1, wherein the material is made of ₃ , AlN or BN.
20. The semiconductor device manufacturing apparatus according to any one of 4, 17, 18, and 19. 23. The semiconductor device manufacturing apparatus according to claim 22, wherein the same substance as the substance formed on the wafer surface by said heat treatment is used on at least the surface of the heat storage plate. 24. The apparatus according to claim 23, wherein said heat storage plate has a thickness of about 1 to 10 mm.