JPH10209774A - Microwave amplifier - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the isolation characteristic of a microwave amplifier put in a metallic package. SOLUTION: An electromagnetic field of a microwave propagated in a package metallic conductor 1 receives retrictions of a border of the metallic package of generating a current propagated on the metallic package. In general, since a vertical distance (y-direction) between a microwave circuit and the metallic package is small, the current is larger especially on a package upper cover 2. However, since a slit 3 is provided to the package upper cover 2, a current flowing to the package upper cover 2 hardly flows in the microwave propagation direction. Thus, the amplifier isolation characteristic of a transistor(TR) chip 13 having been deteriorated by the current flowing to the package upper cover 2 is improved.

Description

DETAILED DESCRIPTION OF THE INVENTION

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microwave circuit used for microwaves and millimeter waves.

[0002]

2. Description of the Related Art FIG. 12A is a diagram of a metal package used in, for example, FLM8596-4c described in a Fujitsu Semiconductor Device Data Book. FIG.
In the figure, 30 is a package metal conductor, 31 is its upper lid, 33 is an input side feedthrough for connecting an internal input side microstrip line to an input terminal 32 outside the package, and 34 is an internal output side microstrip line outside the package. This is an output-side feedthrough for connecting the output terminal 35 to the output terminal 35.

FIG. 12B is a pattern diagram of a microwave amplifier included in the metal package of FIG. In FIG. 12B, reference numerals 36a and 36b denote dielectric substrates on which a microwave circuit is formed, 37 denotes an input side microstrip line, and 38 denotes an input side matching formed by a microstrip line connected thereto. The circuit 39 is a transistor chip for amplifying the microwave transmitted by 38. Reference numeral 40 denotes an output-side matching circuit composed of microstrip lines, and reference numeral 41 denotes an output-side microstrip line that is output to the outside of the amplifier output. Reference numeral 42 represents a plurality of bonding wires connecting the transistor chip 39 to the input side matching circuit 38 and the output side matching circuit 40. By enclosing the microwave amplifier in the metal package, moisture is prevented from adhering to the transistor chip 39, and the reliability is improved. In addition, it is possible to prevent metal chips or the like from adhering to the transistor chip 39 or damage to the chip due to external force.

Next, the operation will be described. In FIG. 12B, the microwave input from the outside of the metal package through the input side microstrip line 37 is transformed into the input impedance of the transistor chip 39 by the input side matching circuit 38, and then input to the transistor chip 39. . The input microwave is amplified by the transistor chip, then impedance-modified by the output-side matching circuit 31, and then output to the outside of the package by the output-side microstrip line 41. Here, the microwave power transmitted in the direction opposite to the microwave traveling direction is small due to the isolation characteristics of the transistor chip 39.

Here, the current induced on the metal package will be described. The main propagation mode of the microstrip line is a TEM wave, which is considered here. FIG.
FIG. 4 is a diagram schematically illustrating an electromagnetic field pattern around a microstrip line that is not included in a metal package.
43 is a microstrip line, 44 is a dielectric substrate, 4
5 represents a ground conductor. In the figure, a solid line represents an electric field, and a broken line represents a magnetic field. In the figure, the distribution of the magnetic field is determined by the microstrip shape, the boundary condition between the microstrip substrate and the ground conductor. The current flowing through the circuit is only on the microstrip line 43 and the ground conductor 45 as indicated by the thick arrow in the figure.

On the other hand, FIG. 14 is a diagram schematically illustrating an electromagnetic field pattern when a microstrip line is included in a metal package. The description of the same components as those in FIG. 13 is omitted. 46 is a package metal conductor, and 47 is its upper lid. In addition to the dielectric substrate and ground conductor, the boundary condition of the package metal conductor is added, similar to the electromagnetic field pattern propagating on the coaxial line, the electric field is also generated above the microstrip and in the direction of the metal package, and the magnetic field is outside the package. The distribution does not leak. The current in the entire circuit is generated on the microstrip substrate, the ground conductor, and also on the metal package cover as shown by the thick arrow in FIG.

When the microwave amplifier shown in FIG. 12 (a) is included in the metal package of FIG. 12 (b) and operated, the presence of a current flowing through the metal package causes a metal package top cover between the input and output lines of the amplifier. , A current flows through the amplifier, so that the amplifier isolation characteristic is deteriorated as compared with the design value. In addition, this may cause unnecessary oscillation due to the feedback of the microwave, and may cause unstable operation of the amplifier.

[0008]

However, since the microwave circuit housed in the conventional metal package is configured as described above, the input / output matching circuits 38, 40 and the input / output side matching circuits 38, 40 formed by microstrip lines are used. Microwaves propagating through the transistor chip 39 generate a current in the upper lid 31 of the metal package, and a current flows between the input and output lines of the amplifier via the upper lid 31 of the metal package, thereby deteriorating the isolation characteristics of the amplifier. is there.

Further, when the isolation is reduced as described above, there is a problem that unnecessary oscillation due to feedback of the microwave signal is likely to occur. There is also a problem that this is particularly likely to occur in a multi-stage microamplifier. Further, in a power combining amplifier in which a plurality of amplifying elements are operated in parallel, there is a problem that parasitic oscillation is likely to occur due to an unbalanced operation state of the amplifying elements.

The present invention has been made in order to solve such a problem, and an object of the present invention is to provide a microwave amplifier capable of improving isolation characteristics and preventing unnecessary oscillation.

[0011]

According to the present invention, there is provided an input / output matching circuit, a microwave amplifying element for amplifying a microwave, and the input / output matching circuit and the microwave amplifying element. In a microwave amplifier having a package metal conductor to be housed and a metal package having an upper lid, a slit is provided in the upper lid of the metal package.

In the present invention, the slit is sealed with a resin or the like.

In the present invention, the slit is filled with a dielectric.

In the present invention, the slit is filled with a radio wave absorber.

In the present invention, the slit is provided on the upper lid of the metal package at a position opposite to the microwave amplifying element.

In the present invention, the slit has a length of 波長 wavelength with respect to the center frequency of the microwave amplifier.

In the present invention, the slit has a shape in which both ends are wide and the center is thin.

Further, in the present invention, the slit is provided in a shape in which a plurality of slits are connected at an equal angle around one end of each slit.

Further, in the present invention, a plurality of microwave amplifying elements are provided, and a power divider for dividing an input microwave into a plurality of microwaves and inputting the plurality of microwaves to the plurality of microwave amplifying elements, respectively; A power combiner for combining a plurality of microwaves output from the amplifying element.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below.

Embodiment 1 FIGS. 1A and 1B show a microwave amplifier according to Embodiment 1 of the present invention. In FIG. 1A, reference numeral 1 denotes a package metal conductor, 2 denotes a package top cover, and 3 denotes a slit provided in the package top cover 2.
The package lid 2 forms a metal package. 4 is an amplifier input terminal, 7 is an amplifier output terminal, 5 is an input side feedthrough connecting the amplifier input terminal 4 to a microwave circuit inside the metal package, and 6 is an amplifier output terminal 7 connecting to the microwave circuit inside the metal package. Output side feedthrough.

In FIG. 1B, 10a and 10b
Is a dielectric substrate on which a microwave amplifier is formed,
Reference numeral 11 denotes an input-side microstrip line, reference numeral 12 denotes an input-side matching circuit composed of microstrip lines connected to the input-side microstrip line, and reference numeral 13 denotes a transistor chip 13 for amplifying the microwave transmitted by the input-side matching circuit 12. 1
Reference numeral 4 denotes an output-side matching circuit composed of microstrip lines, and reference numeral 15 denotes an output-side microstrip line for extracting an amplifier output to the outside. 16 is a transistor chip 13
And a plurality of bonding wires connecting the input matching circuit 12 and the output matching circuit 14. The microwave amplifier circuit having the configuration shown in FIG.
And constitutes a microwave amplifier.

Next, the operation will be described. The microwave input from the amplifier input terminal 4 is supplied to the input side feedthrough 5.
To the input side microstrip line 11 in the package. The signal is transmitted to the transistor chip 13 via the bonding wire 16 while performing impedance transformation to the input impedance of the transistor by the input side matching circuit 12. The signal amplified by the transistor chip 13 is transmitted to the output-side matching circuit 14 via the bonding wire 16 and changes the output impedance of the transistor to a desired impedance from the output-side matching circuit 1.
4, and then transmitted to the output-side microstrip line 15 and output-through feedthrough 6.
To the amplifier input terminal 7 outside the package.

As described above, the electromagnetic field of the microwave propagating in the package metal conductor 1 is restricted by the boundary of the metal package, and generates a current propagating on the metal package.
In general, the vertical direction (y
Since the distance (direction) is small, the current is particularly large in the package lid.

According to the first embodiment, since the slit 3 is provided in the package upper lid 2, the current flowing through the package upper lid 2 is less likely to flow in the microwave propagation direction. As a result, it is possible to improve the amplifier isolation characteristic of the transistor chip 13 which has been deteriorated by the current flowing through the package upper lid 2.

Further, it is possible to eliminate the parasitic oscillation that occurs due to the unstable operation of the amplifier due to the deterioration of the isolation characteristic of the amplifier. Although an example in which only one slit is provided is shown here, a plurality of slits are provided in a direction perpendicular to the microwave propagation direction so as to make the package propagation current more difficult to flow and to improve amplifier isolation characteristics. May be configured.

Further, even in the case of an amplifier having a multi-stage configuration in which transistor chips 13 are arranged in a subordinate manner instead of a single-stage amplifier in a package, a plurality of slits are provided.
In addition to improving the isolation characteristics of the entire amplifier, the isolation characteristics of the transistor chips 13 in each stage can be improved, and the parasitic oscillation that may occur in each transistor chip 13 can be eliminated.

Assuming that the air pressure outside the package is reduced, a glass plate 50 or the like is placed inside the slit 3 as shown in FIG. 2, and the entire glass plate 50 is sealed with a mold 51 such as a resin. By doing so, the transistor chip 1
3 may be enhanced to increase confidentiality.

The shape of the slit 3 does not need to be linear as shown in FIG. 1, and there is no restriction on the shape such as a shape bent at the center. This is the same for the following embodiments.

Embodiment 2 FIG. FIG. 3 is a metal package diagram including a microwave amplifier according to Embodiment 2 of the present invention. In the second embodiment, the package cover 2
It is characterized in that a slit 3a is provided above and at a position opposite to the transistor chip 13. 3 (a) and 3 (b), the package metal conductor 1, the package upper lid 2, the amplifier input terminal 4, the amplifier output terminal 7, the input side feedthrough 5, and the output side feedthrough 6 are shown in FIG. Is the same as the first embodiment shown in FIG.
Dielectric substrates 10a, 10 included in metal package
b, input side matching circuit 12, transistor chip 13, output side matching circuit 1 of input side microstrip line 11
4. Since the output side microstrip line 15 and the bonding wire 16 are the same as those in FIG. 1B of the first embodiment, description thereof is also omitted.

Next, the operation will be described. Since the transistor chip 13 has the power amplifying ability, the electromagnetic field on the output side of the transistor chip 13 is generally several times larger than that on the input side. Therefore, the transistor chip 13
, The package propagation current becomes largest above the input end of the transistor chip 13 and the feedback of the current deteriorates the isolation. However, in the second embodiment, since the slit 3a is provided at a position opposite to the transistor chip 13 on the top cover of the metal package, current leaking from the output terminal to the input terminal of the transistor chip 13 is less likely to flow. Can be prevented from deteriorating, and the parasitic oscillation caused by the unstable operation of the amplifier due to the deterioration of the isolation characteristic of the transistor chip 13 can be eliminated.

Embodiment 3 FIG. FIG. 4 is a metal package diagram including a microwave amplifier circuit according to Embodiment 3 of the present invention. In FIG. 3, reference numeral 60 denotes a cut surface of the package. Since the package metal conductor 1, the package top lid 2, and the dielectric substrate 10 are the same as or correspond to those in the first embodiment shown in FIGS. 1A and 1B, description thereof will be omitted. Reference numeral 3b denotes a slit provided on the metal package upper cover 2 at a position opposite to the transistor chip 13 in the amplifier circuit and having a length of 1/2 wavelength with respect to the amplifier center frequency.

Next, the operation will be described. Slit 3b
Is provided on the metal package upper cover 2 at a position opposite to the amplifier, that is, at a position facing the transistor chip 13 in the amplifier circuit, in order to prevent the deterioration of the isolation characteristics of the amplifier due to the current propagating through the package, the central portion of the slit 3b is required. It is desired that the package propagation current hardly flows. Here, both ends of the slit 3b are short-circuited in consideration of the electric field generated in the slit 3b, and there is no electric field component. Therefore, the distance l from the center of the slit to its end is 1/1
In the case of four wavelengths, the central part of the slit becomes the antinode of the electric field where the electric field component becomes the largest. Since the current flowing at the location where the electric field is the largest becomes the smallest, if l is set to / wavelength, the value of the package propagation current at the center of the slit becomes smaller, thereby further improving the isolation characteristics of the amplifier. be able to.

Embodiment 4 FIG. 5 is a metal package diagram including a microwave amplifier circuit according to Embodiment 4 of the present invention. In FIG. 5, the package metal conductors 1,
Since the package lid 2 and the dielectric substrate 10 are the same as or correspond to those of the first embodiment shown in FIGS. 1A and 1B, the description thereof is omitted. That is, 31
Reference numerals a, 31b and 32b, 22b denote slits provided in the metal package upper lid 2 at positions opposite to the transistor chips 13 in the amplifier circuit.

Next, the operation will be described. 5. Slits 31a, 31b and 32b, 22 of Embodiment 5 of FIG.
b, the width of the slit has a step, so that the electrical lengths of the slits 32b and 31a and the slits 22b and 31b are set to θ1 and θ, respectively, as shown in FIG.
2. Assuming that the characteristic impedances are Z1 and Z2, respectively, the relational expression that makes the slit central portion open condition with respect to the impedance is given by the following expression.

Tanθ1 · tanθ2 = Z1 / Z2 (1)

Therefore, if the characteristic impedances of the slits 32b and 31a and the slits 22b and 31b satisfy the above relational expression (1), the effective length from the center to the end of the slit becomes 1/4 wavelength. It is the same, and the current crossing the slit at the center of the slit can be minimized. Here, if Z1 / Z2 <1, tan θ is 0 <
Since θ <90 is a monotonically increasing function, θ1 + θ2 is 90
で The following relational expression (1) holds, the central portion of the slit is open, and the flowing current is minimized.
In general, when the width of the slit is widened, the characteristic impedance of the slit becomes large, so that the width of both ends according to the present embodiment is wide, and if a slit having a narrow shape at the center is provided, the length of the entire slit can be reduced. The current flowing in the center of the slit can be minimized.

In addition, since the length of the entire slit is reduced, the slit central portion is opened in a wider band as compared with the case where a slit having a quarter wavelength at a design frequency is generally provided without a step. This has the advantage that good isolation characteristics can be obtained over a wide band.

Fifth Embodiment FIG. 6 is a metal package diagram including a microwave amplifier circuit according to a fifth embodiment of the present invention. 6, a package metal conductor 1, a package top cover 2, and a dielectric substrate 10 are the same as those of the first embodiment shown in FIGS. 1 (a) and 1 (b).
Since it is the same as or equivalent to that described above, its description is omitted. 31a, 31b, 31c and 32b, 22b,
Reference numeral 32c is a slit provided on the metal package upper cover 2 at a position opposite to the transistor chip 13 in the amplifier circuit.

In the fifth embodiment of the present invention shown in FIG. 6, the slits 21 and 22 are respectively slits satisfying the above formula (1). It has a length of four wavelengths. In the fifth embodiment, since three slits having a step shape are connected at a central angle of 120 °, the length of each slit is shortened to improve the isolation characteristics over a wide band, and the slit is formed. On the other hand, no matter what direction the current propagates in the package, the current passing through the slit center part A can be minimized. Further, it is also possible to configure as shown in FIG. 7 and to effectively set the length of each slit 33a to 33c to 1/4 wavelength with respect to the design frequency.
In the fifth embodiment, the number of slits is three. However, by combining n slits at a central angle of 360 / n degrees, the isotropy of the blocking performance of the package propagation current can be further improved. it can.

Sixth Embodiment FIG. 8 is a metal package diagram including a microwave amplifier circuit according to a sixth embodiment of the present invention. In FIG.
A package metal conductor 1, a package cover 2, an amplifier input terminal 4, an amplifier output terminal 7, an input side feedthrough 5,
The output-side feedthrough 6 is the same as or equivalent to that of the first embodiment shown in FIG. 1A, and a description thereof will be omitted. Reference numeral 24 denotes a dielectric embedded after the slit 3 is provided in the metal package upper lid 2 at a position opposite to the transistor chip 13 in the amplifier circuit.

For this reason, according to the sixth embodiment, the dielectric 24 buried in the metal package upper lid 2 is provided at a position opposite to the transistor chip 13.
The current flowing through the package upper lid 2 is less likely to flow in the microwave propagation direction. As a result, the increased transistor chip 13 which has been deteriorated by the current flowing through the package
Can improve the isolation characteristics of
It is possible to eliminate the parasitic oscillation that occurs due to the unstable operation of the amplifier due to the deterioration of the isolation characteristic of the amplifier.

When the length from the center to the end of the slit 3 is effectively set to 波長 wavelength with respect to the designed center frequency, the dielectric 3 is buried in the slit 3. Therefore, there is also an advantage that the physical length of the slit 3 is reduced. For this reason,
In the microwave amplifier according to the fourth embodiment, the confidentiality of the package is increased, so that a reliable microwave amplifier can be obtained.

In the sixth embodiment, the slit 3
Although the dielectric 24 is provided, the configuration in which the resistor is embedded in the slit provides the confidentiality of the package and increases the reliability, and the configuration in which the radio wave absorber such as ferrite or chrome is embedded is similarly used. A confidential package with a small package propagation current can be obtained.

Embodiment 7 FIGS. 9A and 9B show a microwave amplifier according to Embodiment 7 of the present invention. In FIG. 9A, the package metal conductor 1, the metal package upper lid 2, the amplifier input terminal 4, the amplifier output terminal 7,
Input side feedthrough 5 and output side feedthrough 6
Since it is the same as the first embodiment shown in FIG.
The description is omitted. Reference numerals 34a to 34d denote slits provided at opposite positions of the respective transistor chips 13a to 13d. The slits 34a to 34d are filled with a dielectric or a radio wave absorber as in the sixth embodiment.

Further, in FIG. 9B, the dielectric substrate 10
a, 10b, input side microstrip line 11, output side microstrip line 15, bonding wire 1
6 is the same as that in FIG. 1B, and the description thereof will be omitted. 17, 18a and 18b represent two-distribution power dividers,
Reference numerals 9a, 19b, and 20 denote two combined power combiners. 13a
13d are transistor chips.

Next, the operation will be described. The microwave input from the outside of the metal package to the input side microstrip line 11 via the input side feedthrough 5 is divided into two while being impedance-modified by the two-partitioned power divider 17, and further divided by the two-partitioned power dividers 18a and 18b. Further, it is divided into two while the impedance is transformed. The four divided microwaves are applied to the transistor chips 13a to 13a.
d is input via the bonding wire 16 and amplified. After the amplified microwave power passes through the bonding wire 16, the two combined power amplifiers 19a, 19b, 2
After being combined into one by 0, it is output to the output side microstrip 15 and output outside the metal package via the output side feedthrough 7.

Here, the two distribution power distributors 17, 18a, 1
When the distribution / combination characteristics are not balanced due to the shape asymmetry of 8b and the two combined power combiners 19a, 19b, and 20, or when the characteristics of the transistor chips 13a to 13d vary in the manufacturing process, ha, 13a to 1
The operating states of the four transistor chips 3d become unbalanced. In this case, the individual transistor chips 13a
Due to the unbalanced operations of .about.13d, as shown in FIG. 10, a loop signal is generated as indicated by a thick arrow B or C, and this signal tends to cause parasitic oscillation. At this time, the degradation of the isolation characteristics due to the metal package propagation current directly increases the gain of the loop signal, and the parasitic oscillation is more likely to occur. In the seventh embodiment, the isolation characteristics of the individual transistor chips 13a to 13d are improved by providing slits 34a to 34d or dielectrics at positions opposite to the individual transistor chips 13a to 13d. Parasitic oscillation due to a loop signal can be prevented.

In the seventh embodiment, the slit 3
4a to 34d are replaced with individual transistor chips 13a to 13d.
Each of the slits 34a to 34d is connected to form a single slit. However, the processing can be facilitated by connecting the slits 34a to 34d. The shape of the slit is not limited.

In the seventh embodiment, a four-parallel synthesized amplifier is described. However, the seventh embodiment can be similarly applied to an n-parallel n synthesized power amplifier.

Further, as shown in FIG. 10B, the line widths of the lines constituting the second-stage two-distribution power dividers 18a and 18b are configured to be equal. However, as shown in FIG. Lines 18a1,1 that constitute devices 18a, 18b
8a2, 18b1 and 18b2 are formed to have different line widths, and the widths of the lines 18a1 and 18b2 and the line 18a
Even if the width of the line 18 is asymmetric,
The power distributors 17 and 18 may be configured so that the power distribution to the a1, 18a2, 18b1 and 18b2 is equal.
Similarly, the first-stage second combined power combiners 19a and 19
b, the lines 19a1 and 19b2 and the lines 19a2 and 19a2
19b1 and the line widths of the lines 19a1 and 19b2 and the lines 19a2 and 19b1 with respect to the line connection direction with the second combined power combiner 20 in the second stage.
Even if the line width is asymmetric, the line 19a,
The power combiners 19 and 20 may be configured so that the combined power to 19b, 19c and 19d is equal. Similarly, by providing a slit or a dielectric for such a power amplifier, it is possible to prevent a parasitic oscillation caused by an unbalanced operation due to a change in the characteristic impedance of the microstrip line due to a metal package. it can.

[0052]

As described above, according to the present invention, an input / output matching circuit, a microwave amplifying element for amplifying microwaves,
In the microwave amplifier having the input / output matching circuit and the package metal conductor for housing the microwave amplifying element therein and the metal package including the top cover, the slit is provided in the top cover of the metal package, so that the isolator of the microwave amplifying element is provided. The oscillation characteristics can be improved, and unnecessary oscillation of the microwave amplifier can be eliminated.

Further, in the following invention, the slit is sealed with resin or the like, so that the isolation of the microwave amplifying element can be improved and the confidentiality of the package can be maintained.
The reliability of the microwave amplifier can be improved.

Further, in the next invention, the slit is filled with the dielectric, so that a package with airtightness can be obtained while reducing the length of the slit.

In the next invention, since the slit is filled with the radio wave absorber, the length of the slit is reduced while
A confidential package can be obtained.

In the next invention, the slit is provided on the upper cover of the metal package and at a position opposite to the microwave amplifying element, so that the isolation characteristics of the microwave amplifying element can be further improved, and the microwave amplifier can be further improved. Unnecessary oscillation can be eliminated.

Further, in the next invention, since a slit having a length of 波長 wavelength with respect to the center frequency of the microwave amplifier is provided, the package propagation current is reduced at the center of the slit, and the isolator of the microwave amplifying element is reduced. The oscillation characteristics can be improved, and unnecessary oscillation of the microwave amplifier can be eliminated.

Further, in the next invention, since the slit having a wide shape at both ends and a narrow shape at the center is provided, the isolation characteristics of the microwave amplifying element can be widened while shortening the entire length of the slit. Can be improved.

Further, in the following invention, since the slits are formed in a shape in which a plurality of slits are connected at equal angles around one end of each, the range of the propagation direction of the slit propagation current which becomes difficult to propagate is increased, and the amplifier line is formed. The isolation characteristics of the microwave amplifying element can be improved regardless of the direction in which the package propagation current travels depending on the shape or the like.

Further, in the next invention, a plurality of microwave amplifying elements are provided, and a power distributor for dividing an input microwave into a plurality of microwaves and inputting the plurality of microwaves to the plurality of microwave amplifying elements, respectively; By providing a power combiner for combining a plurality of microwaves output from the amplification element, the isolation characteristics of each microwave amplification element can be improved, and unnecessary oscillation of the microwave amplifier can be eliminated. Can be.

[Brief description of the drawings]

FIG. 1 is a diagram showing a microwave amplifier according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a microwave amplifier according to Embodiment 1 of the present invention.

FIG. 3 is a diagram showing a microwave amplifier according to a second embodiment of the present invention.

FIG. 4 is a diagram showing a microwave amplifier according to a third embodiment of the present invention.

FIG. 5 is a diagram showing a microwave amplifier according to a fourth embodiment of the present invention.

FIG. 6 is a diagram showing a microwave amplifier according to a fifth embodiment of the present invention.

FIG. 7 is a diagram showing another microwave amplifier according to a fifth embodiment of the present invention.

FIG. 8 is a diagram showing a microwave amplifier according to a sixth embodiment of the present invention.

FIG. 9 is a diagram showing a microwave amplifier according to a seventh embodiment of the present invention.

FIG. 10 is a diagram schematically illustrating a loop signal generated in the microwave amplifier shown in FIG. 9 (b).

FIG. 11 is a diagram showing another microwave amplifier according to the seventh embodiment of the present invention.

FIG. 12 is a diagram illustrating an example of a conventional microwave amplifier.

FIG. 13 is a diagram schematically illustrating an electromagnetic field pattern around a microstrip line that is not included in a metal package.

FIG. 14 is a diagram schematically illustrating an electromagnetic field pattern around a microstrip line included in a metal package.

[Explanation of symbols]

1 Package metal conductor, 2 Package lid, 3, 3
a, 3b, 31a, 31b, 31c, 32a, 32b,
32c, 33a, 33b, 33c, 34a, 34b, 3
4c, 34d slit, 4 amplifier input terminal, 5 input feedthrough, 6 output feedthrough, 7
Amplifier output terminal, 10 dielectric substrate, 11 input side microstrip line, 12 input side matching circuit, 13, 1
3a to 13d Transistor chip (microwave amplifying element), 14 output-side matching circuit, 15 output-side microstrip line, 16 bonding wires, 17, 18
2 split power divider, 19,20 2 combined power combiner, 2
4 Dielectric or radio wave absorption band, 50 glass plate (dielectric), 51 resin.

Claims (9)

[Claims] An input / output matching circuit, a microwave amplifying element for amplifying microwaves, a micro package having a package metal conductor containing the input / output matching circuit and the microwave amplifying element therein and a metal package including an upper cover thereof. A microwave amplifier, wherein a slit is provided in an upper lid of the metal package. 2. The microwave amplifier according to claim 1, wherein the slit is sealed with a resin or the like. 3. The microwave amplifier according to claim 1, wherein the slit is filled with a dielectric. 4. The microwave amplifier according to claim 1, wherein the slit is filled with a radio wave absorber. 5. The microwave amplifier according to claim 1, wherein the slit is provided on the upper cover of the metal package and at a position opposite to the microwave amplifying element. . 6. The microwave amplifier according to claim 5, wherein the slit has a length of 波長 wavelength with respect to a center frequency of the microwave amplifier. 7. The microwave amplifier according to claim 5, wherein the slit has a wide shape at both ends and a narrow shape at the center. 8. The microwave amplifier according to claim 5, wherein the slit is provided in a shape in which a plurality of slits are connected at an equal angle around each one end. 9. A power splitter comprising a plurality of microwave amplifying elements, further comprising: a power splitter for splitting an input microwave into a plurality of pieces and inputting the plurality of microwaves to the plurality of microwave amplifying elements, respectively; The microwave amplifier according to any one of claims 1 to 8, further comprising a power combiner for combining a plurality of microwaves. [0001]