JPH10209464A - Composite circuit and electronic device incorporating composite circuit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form a module in which a thin film transistor and a passive element, e.g. a ceramic filter, are integrated by providing a substrate where a thin film transistor is formed on an insulating surface and a multilayer element connected with the thin film transistor and a terminal made through the substrate. SOLUTION: A thin film transistor is integrated on a quartz substrate 301 while a ceramic element (e.g. an SAW filter) is integrated on another substrate 301 and both substrates are pasted. A contact line 206 is then formed through an opening made through the quartz substrate 301 in order to connect the thin film transistor with the ceramic element. Consequently, a module where a thin film transistor and a passive element, e.g. a ceramic filter, are integrated can be formed. When a high frequency circuit is constituted of a thin film transistor and a filter circuit is formed of a multilayer element, the high frequency circuit can be integrated.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD [0001] The invention disclosed in the present specification is:
The present invention relates to a configuration in which a thin film transistor and a ceramic element or a ferrite element are integrated. The invention disclosed in this specification can be used, for example, for small and lightweight information terminals represented by mobile phones.

[0002]

2. Description of the Related Art In recent years, a technique for manufacturing a transistor using a silicon thin film formed on a quartz substrate or a glass substrate has been studied. They are partially commercialized.
This transistor is called a thin film transistor or a TFT.

The main purpose of research on TFTs is to use them for liquid crystal display devices. This is because a TFT is arranged as a switching element in each of a large number of pixels arranged in a matrix, and the electric charge to be held in the pixel electrode is T
It has a configuration controlled by FT.

Further, as a further advanced configuration, a configuration in which a peripheral driving circuit for driving the circuit other than the active matrix circuit is also configured by a TFT to further increase the integration degree is known.

[0005] In addition to the peripheral driving circuit, a circuit for handling image information and a circuit for exchanging information with the outside are configured by thin film transistors, and it is considered that the entire configuration is systematized.

In recent years, information processing terminals having various information processing functions have been receiving attention. This information processing terminal is called a mobile computer. The functions include a communication function such as a facsimile function and a telephone function, a storage of various information, and an arithmetic processing function.

[0007] This information processing terminal is required to be small and light enough to be portable. Further, it is required to mount a thin film display (also called a flat panel display) for handling image information.

Further, the information processing terminal naturally requires a circuit for exchanging information with the outside.

It is inevitable that cordless information transmission means will be developed in the future. Specifically, a function of exchanging information using a radio wave of a GHz band or higher capable of exchanging high-density information is required.

Therefore, the information processing terminal as described above requires a high-frequency circuit having a function of oscillating and receiving a radio wave in the GHz band in a lightweight and compact device.

In general, the above high-frequency circuit is configured by integrating a transistor using a single crystal silicon wafer or a transistor using a compound semiconductor, a chip type inductor or capacitor, and a filter element such as a SAW element. I have.

However, it is difficult to further increase the degree of integration in a technology trend that requires more and more functions in the future, and further requires a reduction in size, weight, thickness, and cost. is there.

[0013]

SUMMARY OF THE INVENTION An object of the invention disclosed in this specification is to provide a novel structure which can integrate a high-frequency circuit capable of handling a high frequency such as a GHz band.

[0014]

Means for Solving the Problems One of the inventions disclosed in the present specification includes a substrate having a thin film transistor formed on an insulating surface, and a terminal connected to the thin film transistor and formed through the substrate. , And a laminated element connected to the terminal.

According to another aspect of the present invention, there is provided a structure in which a first substrate having a thin film transistor formed on an insulating surface and a second substrate having a laminated element formed thereon are bonded to each other. The thin film transistor and the stacked element are connected by a terminal formed through the substrate.

As the laminated element, an element obtained by laminating a magnetic material or a dielectric material can be used. Examples of the magnetic material include those having a configuration using ferrite, which is a kind of ceramic material.

As an embodiment of the present invention, there can be mentioned a configuration in which a high-frequency circuit is constituted by a thin film transistor and a filter circuit is constituted by a laminated element.

It is effective to form a heat radiation layer on the first substrate in order to radiate the heat generated by the thin film transistor. It is desirable to use a material having high thermal conductivity such as aluminum nitride for the heat radiation layer.

Another aspect of the invention has a structure in which a first substrate having a thin film transistor formed on an insulating surface and a second substrate having a passive element formed thereon are bonded to each other. The thin film transistor and the passive element are connected by terminals formed through the substrate.

As a material constituting the heat radiation layer, in addition to aluminum nitride (AlN), a material obtained by adding oxygen to aluminum nitride (denoted as AlON), an element of Si, Al, O, and N collectively called sialon A crystalline compound consisting of, or a material represented by AlONC, can also be used.

These materials are useful in terms of stress relaxation between the substrate and the element and control of thermal conductivity.

These materials have characteristics such as electrical insulation, high thermal conductivity, heat resistance, and light transmission.

[0023]

DESCRIPTION OF THE PREFERRED EMBODIMENTS As shown in FIG. 3A, a thin film transistor is integrated on a quartz
A ceramic element (for example, a SAW filter or the like) is integrated on the substrate 01, and the two substrates are bonded to each other.

Then, a contact wiring 206 is formed through an opening formed in the quartz substrate 301, and the thin film transistor and the ceramic element are connected.

By doing so, a module in which the thin film transistor and the passive element such as the ceramics filter as shown in FIG. 3B are integrated can be constructed.

As the passive element, an inductor, a capacitor, a resistor and the like can be adopted. Further, an oscillation element or the like can be integrated.

The use of a structure in which thin film transistors are integrated on a quartz substrate has the following utility. (1) The selectivity of the shape of the substrate is high. (2) The area can be increased. (3) Active matrix displays and the like can be integrated on the same substrate. (4) The problem of generation of stress when the degree of integration is increased can be mitigated.

[0028]

【Example】

[Embodiment 1] FIGS. 1 to 3 show the manufacturing steps of this embodiment.
This embodiment shows a configuration in which a thin film transistor circuit and a SAW filter (surface acoustic wave filter) are integrated. The SAW filter has a BPF (Band Pass Filter) function.

Here, a configuration comprising a CMOS circuit and a SAW filter connected to its output is shown.

First, as shown in FIG.
The active layers 103 and 106 of the thin film transistor formed of a crystalline silicon film are formed on the substrate 01. The method for forming the active layer will be described later.

After forming the active layers 103 and 106, a gate insulating film 108 is formed. The gate insulating film is a laminated film of a silicon oxide film formed by a plasma CVD method and a thermal oxide film formed thereafter.

After the formation of the gate insulating film 108, a pattern serving as a base of a gate electrode made of aluminum is formed. Then, a porous anodic oxide film 1 is formed by anodic oxidation.
First, 09 and 112 are formed. Further, anodic oxide films 111 and 11 having dense barrier type film quality by anodizing method.
3 is formed.

The film quality of the two types of anodic oxide films can be determined by selecting the type of electrolytic solution used during anodic oxidation.

Thus, the state shown in FIG. 1A is obtained.
Next, doping of an impurity element is performed under conditions for forming source and drain regions.

Here, a P-channel TFT is formed on the left side, and an N-channel TFT is formed on the right side.

In this step, a region where each TFT is to be formed is selectively masked with a resist mask using a plasma doping method, and a dopant element for imparting P and N types is selectively doped. Done by

In this step, a P-channel type TFT is used.
The source region 102 and the drain region 104 are formed in a self-aligned manner. Further, the source region 107 and the drain region 105 of the N-channel TFT are formed in a self-aligning manner.

Next, the porous anodic oxide films 109 and 112
Is selectively removed. Thus, the state shown in FIG. 1B is obtained.

The doping is performed again in the state shown in FIG. Here, doping is performed with a lower dose than the previous doping (that is, under the condition of light doping).

In this step, 115, 119, 122,
Light doping is performed on the region 126. And one
Regions 15 and 119 are low-concentration impurity regions of the P-channel TFT. The regions 122 and 126 are low-concentration impurity regions of the N-channel TFT.

Thus, the state shown in FIG. 1B is obtained. Next, a silicon nitride film 128 is formed as an interlayer insulating film by plasma CVD.
The film is formed by the method. Further, a polyimide resin film 129 is formed by a spin coating method.

When a resin material is used for the interlayer insulating film, its surface can be flattened, which is advantageous when wiring and the like are formed later. As the resin material, besides polyimide, polyamide, polyimide amide, acrylic, epoxy, or the like can be used.

Thus, the state shown in FIG. 1C is obtained. Next, a contact hole is formed, and a P-channel type TF is formed.
T source electrode (and source wiring extending therefrom) 1
30, a source electrode (and a source wiring extending therefrom) 132 of the N-channel type TFT, and a common drain electrode (and a drain wiring extending therefrom) 31 for both TFTs are formed.

Thus, the state shown in FIG. 1D is obtained. Next, as shown in FIG. 2A, the back side of the quartz substrate 101 is polished to thin the quartz substrate.

Next, as shown in FIG.
To form This opening is formed so as to reach the drain electrode (and the drain wiring) 203.

When the state shown in FIG.
Electrode terminal 20 penetrating to the back side of substrate 101 through
6 is formed. (Fig. 2 (C))

Next, as shown in FIG. 2C, an aluminum nitride film 205 is formed. This aluminum nitride film
It has a function to dissipate the heat generated by the TFT.

Once the state shown in FIG. 2C is obtained, FIG.
As shown in FIG. 1A, a quartz substrate 306 and a quartz substrate 301 on which a SAW filter is formed are bonded via an adhesive layer 306.

As the adhesive layer 306, a material in which conductive fine particles are dispersed in an adhesive binder to have conductivity in the thickness direction may be used.

In the SAW filter, a barium titanate film 302 is formed on a quartz substrate 301, and comb-shaped electrodes 303 and 304 having a pattern shown in FIG. It has a structure. Reference numeral 304 denotes an interlayer insulating film made of a resin material.

One electrode 303 constituting the SAW filter is provided with an electrode 305 for contact.
This electrode comes into contact with the electrode terminal 206 provided through the quartz substrate 306 on which the TFT is formed.

The configuration shown in FIG. 3A is shown by an equivalent circuit in FIG. This circuit has a configuration in which a band-pass filter including a SAW filter is arranged at the output of a CMOS circuit.

By employing the configuration as shown in this embodiment, various circuits composed of transistors and the filter element can be integrated to form a module.

With such a configuration, a high-frequency module that can be used for a mobile phone or a portable information processing terminal can be obtained.

By using such modularized components, it is possible to further reduce the size and cost of a portable telephone or a portable information processing terminal.

[Manufacturing Process of Thin Film Transistor] FIG.
The steps for manufacturing a thin film transistor until the state shown in FIG.

First, as shown in FIG. 4A, an amorphous silicon film 40 is formed on a quartz glass substrate 101 by low pressure thermal CVD.
2 is formed to a thickness of 500 °. It is important that the surface of the quartz substrate has sufficient flatness.

After the formation of the amorphous silicon film, a mask 403 made of a silicon oxide film is formed. This mask 403 is 4
An opening is formed in a portion indicated by reference numeral 04. In this opening 404, the amorphous silicon film 402 is exposed.

This opening is formed to have a longitudinal shape from the near side of the drawing to the depth direction.

Next, 100 ppm was applied by spin coating.
A nickel acetate solution containing (by weight) nickel element is applied. Thus, a state in which the nickel element is held in contact with the surface as indicated by 405 is obtained.
(FIG. 4 (A))

As a method for introducing the nickel element, CVD is used.
Method, a sputtering method, a plasma treatment, an ion implantation method, or the like can be used.

In addition to the nickel element, Fe, Co, R
One selected from u, Rh, Pd, Os, Ir, Pt, Cu, and Au can be used.

Next, in a nitrogen atmosphere at normal pressure,
Heat treatment at 8 ° C. for 8 hours. In this step, as indicated by 405, crystal growth proceeds in a direction parallel to the substrate. (FIG. 4 (B))

This heat treatment is performed in an electric furnace. By performing this heat treatment, a state in which a large number of columnar crystal structures having a diameter of about several tens to several hundreds of nm are arranged in parallel can be obtained. The longitudinal direction of this crystal structure is 405
Coincides with the crystal growth direction indicated by. This crystal structure is partitioned by crystal grain boundaries extending in the direction in which the crystal structure extends. Further, it has been confirmed that the crystal grain boundaries are inert.

In the above heat treatment, the temperature is raised to 450 ° C.
It can be selected from the range of about 1100 ° C.

When the heat treatment for crystallization is completed, the mask 403 made of a silicon oxide film is removed. Then, in an oxygen atmosphere containing 3% by volume of HCl, 9%
A heat treatment is performed at 50 ° C. for 20 minutes. In this step, a thermal oxide film is formed to a thickness of 200 °. Then, the thickness of the silicon film decreases from 500 ° to 400 °.

In this step, dangling bonds of silicon atoms are reduced with the formation of the thermal oxide film, and defects in the film are greatly reduced. The process of forming this thermal oxide film is important,
Through this step, high characteristics of the finally obtained thin film transistor are guaranteed.

The nickel element contained in the thermal oxide film has a relatively high concentration as compared with the silicon film.

By forming this thermal oxide film,
A columnar crystal structure is obtained in a remarkable form.
This has been confirmed by observation with an electron microscope.

After the formation of the thermal oxide film, the thermal oxide film is removed. By doing so, the nickel element can be eliminated.

Next, by patterning the obtained crystalline silicon film, 103 and 106 in FIG.
To obtain the pattern indicated by.

Here, the pattern 103 is a pattern to be an active layer of a P-channel type thin film transistor. Reference numeral 106 denotes a pattern to be an active layer of a P-channel thin film transistor.

After forming the active layer, the gate insulating film 409
First, a silicon oxide film (CVD oxide film) is formed to a thickness of 200 ° by a plasma CVD method. CV
After forming the D oxide film, thermal oxidation is performed again to form a thermal oxide film.

In the step of forming this thermal oxide film, HCl
950 ° C. in an oxygen atmosphere containing 3% by volume of
A heat treatment for 20 minutes is performed. In this process, 200Å
A thermal oxide film is formed to a thickness of.

This thermal oxide film is formed inside the previously formed CVD oxide film, that is, near the interface with the active layer. Thus, a gate insulating film 409 composed of a thermal oxide film and a CVD oxide film sequentially stacked from the inside is formed. Then, the final thickness of the active layer is 300 °. (FIG. 4 (C))

After obtaining the state shown in FIG. 4C, an aluminum film containing a trace amount of scandium is formed to a thickness of 400 nm (4000 °) by a sputtering method. By patterning this, an aluminum pattern indicated by 410 and 411 in FIG. 4D is formed. This aluminum pattern becomes a pattern that becomes the basis of the gate electrode. Thus, the state shown in FIG. 4D is obtained.

The thin film transistor as shown here exhibits characteristics equal to or higher than those of a MOS transistor using a single crystal silicon wafer.

The solid line in FIG. 8 indicates that the thickness of the gate insulating film obtained by the manufacturing method shown here is 30 nm.
(300 °), showing an example of characteristics of a thin film transistor having a channel length of 0.6 μm.

This thin film transistor was manufactured by a manufacturing process according to the 2 μm rule. As a method of shortening the channel length, a technique of anodizing the side surface of the gate electrode is used.

The horizontal axis of the figure is the power supply voltage, and the vertical axis is the delay.
Time (delay time). The Delay Time corresponds to the reciprocal of the operation speed, and indicates that the smaller the value, the faster the operation is possible.

The other data indicated by the dotted line in FIG. 8 is comparison data indicating that of a MOS transistor using a single crystal silicon wafer.

The comparison data shown in FIG. 8 shows the relationship between the dimension of the MOS transistor (the channel length and the thickness of the gate insulating film) called the scaling rule and the Delay Time (delay time).

The scaling rule is an idea that as the size of a MOS transistor is reduced, its high-frequency characteristics are increased in accordance with a specific rule. (Of course not exactly)

The plotted points shown by the dotted lines in FIG. 8 are in accordance with the scaling rule, although they are schematic.

It can be seen that the thin film transistor obtained by the manufacturing method disclosed in the present specification is several ranks higher than the high frequency characteristics predicted from the conventional scaling law.

MOS using single crystal silicon wafer
If the scaling rule of the type transistor is followed, the plot point of the TFT indicated by the solid line has a larger Delay Time (delay time).

For example, if the conventional scaling rule is followed, the channel length is 0.6 μm and the thickness of the gate insulating film (tox)
The delay time (delay time) of a MOS transistor having a thickness of 30 nm should be at least larger than the plot point where the channel length is 0.5 μm and the thickness (tox) of the gate insulating film is 11 nm.

As described above, the thin film transistor disclosed in the present specification exhibits characteristics exceeding those of the conventional MOS transistor.

[Embodiment 2] This embodiment is an example in which a ceramics substrate is used as a substrate in the configuration shown in FIG.

In this case, (1) All of the substrates are ceramic substrates. (2) A TFT substrate or a substrate on which a SAW element is formed is used as a ceramic substrate. There is an option.

When a ceramic substrate is used, the degree of freedom in selecting a material is increased, which is advantageous in terms of productivity and cost.

When a ceramic substrate is used as the substrate, it is important to select a substrate having excellent surface flatness. In particular, the substrate on which the TFT is formed (TF
T substrate) has excellent surface flatness,
It is important to choose one without pinholes.

[Embodiment 3] This embodiment is an example in which an inductor is arranged instead of a BPF (bandpass filter) formed of a SAW filter in the configuration shown in FIG.

FIG. 5 shows a schematic configuration of this embodiment. FIG.
Have the same structure as shown in FIG.

In FIG. 5, reference numeral 502 denotes a conductive pattern forming an inductor. Reference numeral 501 denotes a dielectric existing between the conductive patterns. Reference numeral 504 denotes one terminal pattern of the inductor, which is connected to an output of an inverter including a P-channel TFT and an N-channel TFT. Reference numeral 503 denotes the other terminal pattern of the inductor, which extends to another element or wiring (not shown). 500
Is a substrate made of a ceramic material.

Here, the example in which the inductor is arranged has been described, but in addition, (1) a chip capacitor, and (2) an element using a piezoelectric material. (For example, a voltage controlled oscillator (VCO)) (3) An element using ferrite. And the like can be arranged.

[Embodiment 4] This embodiment is a modification of the configuration shown in FIG. FIG. 6 shows a schematic configuration of the present embodiment.
The feature of this embodiment is that the aluminum nitride film 601 is used.
That is, an aluminum film was further formed thereon.

In this way, the heat generated by the TFT can be radiated with higher efficiency. this is,
This is a useful configuration when the TFT is operated at high speed.

[Embodiment 5] This embodiment is an example in which the configuration shown in Embodiment 4 is further improved. FIG. 7 shows a schematic configuration of this embodiment.

The feature of this embodiment is that an aluminum nitride film 602 is provided on a quartz substrate 601. This makes it possible to effectively radiate the heat generated in the active layer of the TFT.

[Embodiment 6] The present embodiment relates to the structure of the module end in the structure as shown in FIG.
That is, the present embodiment relates to a module mounting method in a case where a module as shown in FIG.

FIG. 9 shows the state of the end of the module as shown in FIG. In the configuration shown in FIG.
The wiring 130 extending from the source (or drain) is connected to an extraction electrode (extraction terminal) 901 to the outside.

A wiring 903 formed on a substrate 301 on which a ceramic element or the like is formed is connected to an extraction electrode (extraction terminal) 902 to the outside.

The wiring 903 is connected to a SAW element and an inductor formed on the substrate 301.

With this configuration, the modularized substrate can be directly inserted into the connection terminals provided in the device.

By adopting such a configuration, the versatility of the apparatus can be enhanced, and the production cost can be reduced.

[Embodiment 7] This embodiment shows an example in which the quartz substrate 601 is completely polished and the aluminum nitride film 602 is used as a TFT substrate in the configuration shown in FIG. In this case, the aluminum nitride film 602 is required to have a strength (at least up to the stage of bonding to the substrate 301) that can be used as a substrate alone.

With such a configuration, the effect of radiating the heat generated by the TFT can be enhanced.

[Embodiment 8] This embodiment is an example in which the configuration as shown in FIG. 3A is employed and an active matrix type liquid crystal display device is integrated in another portion (not shown). Show.

In this case, an active matrix circuit (not shown) is formed on the other part of the quartz substrate 101 shown in FIG. 3A, and the quartz substrate is used as a TFT side substrate, and another light transmitting substrate (not shown) is opposed to the TFT substrate. Substrate. Then, by bonding these two substrates through a liquid crystal layer, an active matrix liquid crystal display device can be formed.

By employing such a configuration, it is possible to obtain a configuration in which the display is modularized in addition to the high-frequency circuit.

[Embodiment 9] This embodiment shows an example of an electronic device using a composite circuit in which a thin film transistor circuit and a passive element or a ceramic element as shown in FIG. 3 are combined.

(A) shows a portable information processing terminal, which has a communication function using a telephone line.

This electronic device includes an integrated circuit 2006, which is a composite circuit disclosed in this specification, inside a main body 2001. An active matrix type liquid crystal display 2005 and a camera unit 200 for capturing an image
2, further comprising an operation switch 2004.

FIG. 10B shows an electronic device called a head mounted display. This device is
It has a function of being attached to the head and displaying an image in front of the eyes. In this electronic device, a main body 2101 is mounted on a head by a band 2103. The image is created by the liquid crystal display device 2102 corresponding to the left and right eyes.

Since such an electronic device must be small and lightweight, it is suitable for using the composite circuit disclosed in this specification.

FIG. 10C has a function of displaying map information and various types of information based on signals from artificial satellites. Information from the satellite captured by the antenna 2204 is processed by an electronic circuit provided inside the main body 2201, and necessary information is displayed on the liquid crystal display device 2202.

The operation of the apparatus is performed by operating switches 2203. Even in such an apparatus, a device for miniaturizing the entire configuration is required. Then, it is useful to use the composite circuit disclosed in this specification.

FIG. 10D shows a mobile phone. This electronic device includes an antenna 230
6, an audio output unit 2302, a liquid crystal display device 2304, operation switches 2305, and an audio input unit 2303.

In such an electronic device, it is useful to use the composite circuit disclosed in this specification in order to reduce the overall configuration.

FIG. 11 is a block diagram of an electronic device as shown in FIG. For example, in the reception state, radio waves received by the antenna 2002 are transmitted to the radio input / output unit 2.
003. Then, the wireless control unit 2007 and C
Through the edge demodulation unit 2004 and the channel codec unit 2005 controlled by the PU 2008, the audio processing unit 200
Sent to 6. Then, the information is output as audio information from a speaker 2010 driven by the audio processing unit 2006.

In the oscillating state, audio information is input from the microphone 2009, and output as radio waves from the antenna 2002 via a path reverse to the above.

The electronic device shown in FIG. 10E is a portable imaging device called a video camera. This electronic device includes a liquid crystal display 2402 attached to an opening / closing member on a main body 2401, and an operation switch 2404 attached to the opening / closing member.

Further, the main body 2401 includes an image receiving section 2406, an integrated circuit 2407, and an audio input section 240.
3, an operation switch 2404, and a battery 2405 are provided.

In such an electronic device, it is useful to use the composite circuit disclosed in this specification in order to reduce the overall configuration.

In particular, when a load function such as a communication function is added, it is necessary to incorporate a high-frequency circuit therefor, that is, to integrate it.

For this purpose, it is useful to utilize the invention disclosed in this specification.

The electronic device shown in FIG. 10F is a projection type liquid crystal display device. This device includes a light source 2502, a liquid crystal display device 2503, and an optical system 2504 in a main body 2501, and has a function of projecting an image on a screen 2505.

The projection type display device is also required to be reduced in size and weight. Therefore, it is useful to utilize the invention disclosed in this specification for that purpose.

As the liquid crystal display device in the electronic device described above, either a transmission type or a reflection type can be used. The transmission type is advantageous in terms of display characteristics, and the reflection type is advantageous in pursuit of low power consumption and reduction in size and weight.

As the display device, a flat panel display such as an active matrix type EL display or a plasma display can be used.

[Embodiment 10] This embodiment shows an example in which a polycrystalline silicon wafer is used as a substrate in the structure shown in Embodiment 1.

Polycrystalline silicon wafers can be obtained at a fraction of the cost of quartz substrates.
Therefore, it is possible to make a great contribution to reducing the cost of the circuit and the device.

In this embodiment, first, a silicon oxide film is formed on a polycrystalline silicon wafer by plasma CVD.
A film is formed to a thickness of μm. Next, thermal oxidation is performed to form a thermal oxide film 5.
A film is formed to a thickness of 0 nm (500 °).

Thus, a silicon oxide film having a flat surface and excellent interface characteristics can be formed on a polycrystalline silicon wafer.

Using this silicon oxide film as a base film (substrate), a TFT is formed thereon.

It is not preferable to form a thermal oxide film directly on a polycrystalline silicon wafer and use this thermal oxide film as a base film. In this case, the surface of the thermal oxide film becomes uneven, reflecting the polycrystalline structure of the substrate, and the fabrication of the TFT,
Further, the characteristics are adversely affected.

Although a single crystal silicon wafer can be used instead of a polycrystalline silicon wafer, the advantage of low cost is reduced in that case.

[0139]

By using the invention disclosed in this specification, it is possible to provide a novel structure capable of integrating a high-frequency circuit capable of handling a high frequency such as a GHz band.

That is, a connection terminal (connection wiring) is provided through the substrate on which the TFT is formed, and the connection terminal is connected to a laminated element formed on another substrate, whereby the device is miniaturized and integrated. A high-frequency module can be obtained.

By using a module utilizing the invention disclosed in this specification, a portable information terminal can be made smaller and lighter. Furthermore, the cost can be reduced.

[Brief description of the drawings]

FIG. 1 illustrates a manufacturing process of a thin film transistor.

FIG. 2 illustrates a manufacturing process of a thin film transistor.

FIG. 3 is a diagram showing a configuration in which a thin film transistor and a SAW filter are combined, details thereof, and an equivalent circuit thereof.

FIG. 4 illustrates a manufacturing process of a thin film transistor.

FIG. 5 is a diagram showing a configuration in which a thin film transistor and an inductor are combined.

FIG. 6 is a diagram showing a configuration in which a thin film transistor and a SAW filter are combined.

FIG. 7 is a diagram showing a configuration in which a thin film transistor and a SAW filter are combined.

FIG. 8 is a diagram showing a relationship between dimensions and characteristics of a MOS transistor.

FIG. 9 is a diagram showing a configuration of an end portion of a combined module.

FIG. 10 illustrates an electronic device including a thin film transistor composite circuit.

FIG. 11 is a block diagram illustrating a configuration of a mobile phone.

[Explanation of symbols]

Reference Signs List 101 quartz substrate 102 source region 103 active layer 104 drain region 105 drain region 106 active layer 107 source region 108 gate insulating film 109 porous anodic oxide film (aluminum oxide film) 110 gate electrode made of aluminum 111 having dense film quality Anodized film (aluminum oxide film) 112 Porous anodized film (aluminum oxide film) 113 Anodized film (aluminum oxide film) having dense film quality 114 Gate electrode made of aluminum 115 Low-concentration impurity region 116 Offset gate region 117 Channel formation region 118 Offset gate region 119 Low concentration impurity region 122 Low concentration impurity region 123 Offset gate region 124 Channel formation region 125 Offset gate region 126 Low concentration impurity Region 128 silicon nitride film 129 polyimide resin film 130 source electrode (source wiring) 131 drain electrode (drain wiring) 132 source electrode (source wiring) 201 opening for contact 205 aluminum nitride film 206 electrode for contact 301 quartz substrate 302 dielectric 303 Electrode constituting SAW filter 304 Electrode constituting SAW filter 305 Electrode for contact 306 Adhesive layer 402 Amorphous silicon film 403 Mask made of silicon oxide film 404 Opening 400 Nickel element held in contact with surface 405 Crystal growth Direction 406 Crystalline silicon film 409 Gate insulating film 410 Aluminum pattern serving as gate electrode base 411 Aluminum pattern serving as gate electrode base 500 Substrate 501 Dielectric 502 Constituting inductor Conductive patterns 503 inductor of the other wiring 504 one wire of the inductor

Claims (13)

[Claims] 1. A substrate having a thin film transistor formed on an insulating surface, a terminal connected to the thin film transistor and formed through the substrate, and a stacked element connected to the terminal. And a composite circuit. 2. A structure in which a first substrate having an insulating surface on which a thin film transistor is formed on one surface and a second substrate having a laminated element formed thereon are bonded to each other, A composite circuit, wherein the thin film transistor and the multilayer element are connected by terminals formed through the substrate. 3. The composite circuit according to claim 1, wherein the laminated element has a configuration using a magnetic material or a dielectric material. 4. The composite circuit according to claim 1, wherein the laminated element is formed of a magnetic material or a dielectric material in which ceramic materials are laminated. 5. The composite circuit according to claim 1, wherein a high-frequency circuit is constituted by a thin film transistor, and a filter circuit is constituted by a laminated element. 6. The composite circuit according to claim 2, wherein a heat radiation layer for radiating heat from the thin film transistor is formed on the first substrate. 7. A structure in which a first substrate on which a thin film transistor is formed on an insulating surface and a second substrate on which a passive element is formed are bonded to each other, wherein the first substrate penetrates through the first substrate. A composite circuit, wherein the formed thin film transistor is connected to the passive element. 8. A composite circuit comprising: a substrate having a thin film transistor formed on an insulating surface; a terminal connected to the thin film transistor and formed through the substrate; and a stacked element connected to the terminal. Electronic devices with built-in. 9. A structure in which a first substrate on which a thin film transistor is formed on an insulating surface and a second substrate on which a stacked element is formed are bonded to each other, wherein the first substrate is penetrated through the first substrate. An electronic device having a built-in composite circuit having a structure in which the thin film transistor and the laminated element are connected by formed terminals. 10. An electronic device according to claim 8, wherein the laminated element has a configuration in which ceramic materials are laminated. 11. An electronic device according to claim 8, wherein a high-frequency circuit is constituted by a thin film transistor, and a composite circuit in which a filter circuit is constituted by a laminated element. 12. The electronic device according to claim 9, wherein a heat radiation layer for radiating heat from the thin film transistor is formed on the first substrate. 13. A structure in which a first substrate on which a thin film transistor is formed on an insulating surface and a second substrate on which a passive element is formed are bonded to each other, wherein the first substrate penetrates through the first substrate. An electronic device having a built-in composite circuit in which the thin film transistor and the passive element are connected by formed terminals.