JPH10209162A - Electronic part for solder bump connection and its manufacture - Google Patents
Electronic part for solder bump connection and its manufactureInfo
- Publication number
- JPH10209162A JPH10209162A JP9005575A JP557597A JPH10209162A JP H10209162 A JPH10209162 A JP H10209162A JP 9005575 A JP9005575 A JP 9005575A JP 557597 A JP557597 A JP 557597A JP H10209162 A JPH10209162 A JP H10209162A
- Authority
- JP
- Japan
- Prior art keywords
- solder
- solder bump
- upper substrate
- hole
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 107
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 92
- 239000006071 cream Substances 0.000 claims abstract description 25
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 238000002844 melting Methods 0.000 claims abstract description 4
- 230000008018 melting Effects 0.000 claims abstract description 4
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 230000001133 acceleration Effects 0.000 description 11
- 238000000605 extraction Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 10
- 238000005498 polishing Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- XUKUURHRXDUEBC-KAYWLYCHSA-N Atorvastatin Chemical compound C=1C=CC=CC=1C1=C(C=2C=CC(F)=CC=2)N(CC[C@@H](O)C[C@@H](O)CC(O)=O)C(C(C)C)=C1C(=O)NC1=CC=CC=C1 XUKUURHRXDUEBC-KAYWLYCHSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3452—Solder masks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3485—Applying solder paste, slurry or powder
Landscapes
- Pressure Sensors (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半田バンプで接続
する電子部品、特に、下部基板とこの下部基板にに形成
した機能部を保護ないし封止する上部基板とを備えた半
田バンプ接続電子部品およびその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component connected by a solder bump, and more particularly to an electronic component connected to a solder bump having a lower substrate and an upper substrate for protecting or sealing a functional portion formed on the lower substrate. And its manufacturing method.
【0002】[0002]
【従来の技術】従来の半田バンプ接続電子部品およびそ
の製造方法について、図11を参照して説明する。同図
は従来の半田バンプ接続電子部品としての加速度センサ
20の断面形態を示すものである。21は下部基板で、
この下部基板21には、振動体22が自由振動可能に形
成されている。23は上部基板で、凹部23aと孔23
bを有し、下部基板21に貼り合わされて、その凹部2
3aで振動体22を蓋被している。24は振動体22の
引出電極で、孔23b内に露出している下部基板21上
に形成されている。また、25は上部基板23上に形成
された半田バンプ形成用の下地電極で、この下地電極2
5と引出電極24は孔23bを経由する配線パターン2
6により接続されている。そして、下地電極25には、
半田バンプ27が形成されている。この半田バンプ27
は、半田クリームをメタルマスクを使用して下地電極2
5上に印刷し、その後、この印刷された半田クリームを
加熱溶融し、その溶剤を蒸発させて半田を表面張力によ
り球体状に凝集させて形成される。2. Description of the Related Art A conventional solder bump connection electronic component and a method of manufacturing the same will be described with reference to FIG. FIG. 1 shows a sectional form of an acceleration sensor 20 as a conventional solder bump connection electronic component. 21 is a lower substrate,
A vibrating body 22 is formed on the lower substrate 21 so as to freely vibrate. Reference numeral 23 denotes an upper substrate, which has a concave portion 23a and
b, and is bonded to the lower substrate 21 so that the recess 2
The vibrating body 22 is covered with a cover 3a. Reference numeral 24 denotes an extraction electrode of the vibrator 22, which is formed on the lower substrate 21 exposed in the hole 23b. Reference numeral 25 denotes a base electrode for forming a solder bump formed on the upper substrate 23.
5 and the extraction electrode 24 are connected to the wiring pattern 2 passing through the hole 23b.
6. Then, the base electrode 25 has
Solder bumps 27 are formed. This solder bump 27
Is to use a solder mask with a metal mask
The printed solder cream is heated and melted, the solvent is evaporated, and the solder is aggregated into a spherical shape by surface tension.
【0003】振動体22に形成した図示しない可動櫛歯
電極と下部基板21に形成した固定櫛歯電極との間の静
電容量が加速度に応じて変化し、この静電容量の変化量
を半田バンプ27、27から取り出し、電圧変換して加
速度を検出する。The capacitance between the movable comb electrode (not shown) formed on the vibrating body 22 and the fixed comb electrode formed on the lower substrate 21 changes in accordance with the acceleration. The acceleration is detected by taking out from the bumps 27 and 27 and converting the voltage.
【0004】[0004]
【発明が解決しようとする課題】しかしながら、従来の
半田バンプ接続電子部品は、機能部からの引出電極24
を下部基板21に形成し、上部基板23に半田バンプ接
続用の下地電極25を形成し、この引出電極24と下地
電極25との間を接続する配線パターン26を必要とす
る。したがって、従来の半田バンプ接続電子部品は、引
出電極24を外部に導出する孔23b、配線パターン2
6および下地電極25を別々に形成する領域を必要とし
て、形状が大きくなっていた。However, the conventional solder bump connection electronic component has the draw-out electrode 24 from the functional portion.
Is formed on the lower substrate 21, a base electrode 25 for solder bump connection is formed on the upper substrate 23, and a wiring pattern 26 for connecting between the extraction electrode 24 and the base electrode 25 is required. Therefore, in the conventional solder bump connection electronic component, the hole 23b for leading the extraction electrode 24 to the outside, the wiring pattern 2
6 and a base electrode 25 are required separately, and the shape is large.
【0005】また、従来の半田バンプ接続電子部品の製
造方法は、半田バンプを形成するための半田クリームを
印刷するメタルマスクを必要とし、かつ、配線パターン
26を形成する工程を必要としていた。In addition, the conventional method for manufacturing a solder bump connection electronic component requires a metal mask for printing a solder cream for forming a solder bump, and requires a step of forming a wiring pattern 26.
【0006】そこで、本発明は、半田バンプ接続用の下
地電極を下部基板に形成して、下部基板に半田バンプを
形成することにより、小形化を図ることのできる半田バ
ンプ接続電子部品を提供し、および下地電極に引出電極
を兼ねさせることにより配線パターンを不必要とし、か
つ、上部基板に形成した孔をメタルマスク代わりに使用
する半田バンプ接続電子部品の製造方法を提供すること
を目的とする。Accordingly, the present invention provides a solder bump connection electronic component which can be downsized by forming a base electrode for solder bump connection on a lower substrate and forming a solder bump on the lower substrate. And a method of manufacturing a solder bump connection electronic component that does not require a wiring pattern by also serving as an extraction electrode as a base electrode, and uses a hole formed in an upper substrate instead of a metal mask. .
【0007】[0007]
【課題を解決するための手段】請求項1に記載の半田バ
ンプ接続電子部品の発明は、下部基板に形成した下地電
極が上部基板に形成した孔内に位置するように、前記下
部基板と前記上部基板とを貼り合わせ、前記下地電極に
は前記孔の直径より狭い幅を有し、かつ、前記上部基板
の厚みより厚い高さを有する前記半田バンプが形成され
て前記孔から突出しているものである。According to a first aspect of the present invention, there is provided a solder bump connection electronic component, wherein the lower substrate and the lower substrate are connected to each other so that a base electrode formed on the lower substrate is positioned in a hole formed in the upper substrate. The solder bump having a width smaller than the diameter of the hole, and the solder bump having a height greater than the thickness of the upper substrate is formed on the base electrode, and the base electrode protrudes from the hole. It is.
【0008】この半田バンプ接続電子部品の発明は、下
部基板の下地電極に形成した半田バンプが、上部基板の
孔より突出して形成され、実装基板への接続の機能を果
たす。この半田バンプの形成されている下地電極は、機
能部からの引出電極も兼ねているので、この引出電極と
下地電極とを個別に形成する必要が無く、またこれらを
接続する配線パターンも必要が無くなり、小形化を図る
ことができる。In the invention of the solder bump connection electronic component, the solder bump formed on the base electrode of the lower substrate is formed so as to protrude from the hole of the upper substrate, and performs the function of connection to the mounting substrate. Since the base electrode on which the solder bumps are formed also serves as an extraction electrode from the functional unit, there is no need to separately form the extraction electrode and the base electrode, and it is also necessary to provide a wiring pattern for connecting these. It is possible to reduce the size.
【0009】請求項2に記載の半田バンプ接続電子部品
の製造方法の発明は、下部基板に半田バンプ接続用の下
地電極を形成する工程と、該下地電極が、上部基板に形
成した孔内に位置するように、前記上部基板を前記下部
基板に貼り合わせる工程と、半田クリームを前記孔内に
充填する工程と、前記半田クリームを加熱溶融して半田
を凝集させ、前記下地電極上に前記半田バンプを形成し
て前記孔より突出させる工程と、よりなるものである。According to a second aspect of the present invention, there is provided a method of manufacturing a solder bump connection electronic component, comprising: forming a base electrode for solder bump connection on a lower substrate; and forming the base electrode in a hole formed in the upper substrate. Bonding the upper substrate to the lower substrate so as to be positioned, filling the solder cream into the holes, heating and melting the solder cream to aggregate the solder, and forming the solder on the base electrode. Forming a bump and projecting from the hole.
【0010】この半田バンプ接続電子部品の製造方法の
発明は、半田バンプ形成用の半田クリームを上部基板に
形成した孔内に充填し、この半田クリームを加熱溶融
し、下地電極上に半田をその表面張力により、上部基板
の厚みより厚い高さを有する球体状に凝集させて孔から
突出する半田バンプを形成する。この半田バンプは、下
地電極の直径、孔の大きさ、半田クリームの量を適宜設
定することにより形成される。そして、この半田バンプ
により、本発明の半田バンプ接続電子部品が実装基板に
接続される。According to the invention of the method for manufacturing a solder bump connection electronic component, a solder cream for forming a solder bump is filled in a hole formed in an upper substrate, the solder cream is heated and melted, and the solder is deposited on a base electrode. Due to the surface tension, the solder bumps are aggregated into a sphere having a height greater than the thickness of the upper substrate to form solder bumps projecting from the holes. The solder bump is formed by appropriately setting the diameter of the base electrode, the size of the hole, and the amount of the solder cream. Then, the solder bump connection electronic component of the present invention is connected to the mounting board by the solder bump.
【0011】[0011]
【発明の実施の形態】以下に、本発明の半田バンプ接続
電子部品の実施例について図面を参照して説明する。図
1において、10は半田バンプ接続電子部品としての加
速度センサを断面形態で示すものである。1は、単結晶
シリコン層1a、酸化シリコン層1bおよび単結晶シリ
コン層1cの3層構造よりなるSOI(Sicon On Insul
ator)基板より構成される下部基板である。単結晶シリ
コン層1cをフォトリソグラフィ技術、エッチング技術
などの半導体微細加工技術を用いて加工することによ
り、図2に点集合部分で示す機能部が形成される。即
ち、単結晶シリコン層1c上に、点集合部分で示す機能
部および単結晶シリコン層1cの周辺部の形状に相当す
るフォトレジストマスクを形成し、6フッ化硫黄(SF
6 )ガスを用いたRIE(反応性イオンエッチング)に
より単結晶シリコン層1cに、酸化シリコン層1bが見
えるまで異方性エッチングを施す。つぎに、下部基板1
をバファフッ酸(BHF)のエッチング液に浸漬して、
振動体2、支持梁2a、可動櫛歯電極2bの下部にある
及び露出している酸化シリコン層1bを除去する。な
お、図1に示す下部基板1は、図2のX−X線断面にお
ける形態を示すものである。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view showing an electronic component connected to a solder bump according to an embodiment of the present invention. In FIG. 1, reference numeral 10 denotes an acceleration sensor as a solder bump connection electronic component in a sectional form. Reference numeral 1 denotes an SOI (Sicon On Insul) having a three-layer structure of a single crystal silicon layer 1a, a silicon oxide layer 1b, and a single crystal silicon layer 1c.
ator) A lower substrate composed of a substrate. By processing the single-crystal silicon layer 1c by using a semiconductor fine processing technique such as a photolithography technique or an etching technique, a functional portion indicated by a point set portion in FIG. 2 is formed. That is, on the single-crystal silicon layer 1c, a photoresist mask corresponding to the shape of the functional portion indicated by the point set portion and the shape of the peripheral portion of the single-crystal silicon layer 1c is formed, and sulfur hexafluoride (SF) is formed.
6 ) Anisotropic etching is performed on the single crystal silicon layer 1c by RIE (reactive ion etching) using a gas until the silicon oxide layer 1b is visible. Next, the lower substrate 1
Is immersed in an etching solution of buffa hydrofluoric acid (BHF),
The silicon oxide layer 1b under and exposed to the vibrator 2, the support beam 2a, and the movable comb electrode 2b is removed. The lower substrate 1 shown in FIG. 1 shows a form in a cross section taken along line XX of FIG.
【0012】図2において、2は長方形板状の振動体
で、その4隅部からは支持梁2aが長手方向と直角方向
に伸び、その先端は固定電極3にそれぞれ結合してい
る。振動体2はこれらの4つの支持梁2aにより矢印方
向に変位可能に支持されている。固定電極3の表面に
は、半田バンプ接続用の下地電極e1が形成されてい
る。In FIG. 2, reference numeral 2 denotes a rectangular plate-shaped vibrator, and a support beam 2a extends from four corners thereof in a direction perpendicular to the longitudinal direction. The vibrating body 2 is supported by these four support beams 2a so as to be displaceable in the direction of the arrow. On the surface of the fixed electrode 3, a base electrode e1 for solder bump connection is formed.
【0013】また、振動体2の中央部の両側面には可動
櫛歯電極2bが形成されている。そして、この可動櫛歯
電極2bと対抗してコンデンサを形成する固定櫛歯電極
4aも形成され、この固定櫛歯電極4aは固定電極4に
結合している。そして、この固定電極4の表面には、半
田バンプ接続用の下地電極e1が形成されている。A movable comb electrode 2b is formed on both sides of the center of the vibrating body 2. A fixed comb electrode 4a forming a capacitor is formed opposite the movable comb electrode 2b. The fixed comb electrode 4a is coupled to the fixed electrode 4. On the surface of the fixed electrode 4, a base electrode e1 for solder bump connection is formed.
【0014】なお、振動体2、支持梁2a、可動櫛歯電
極2bは、上述のように、下部の酸化シリコン層1bが
エッチングにより除去されて単結晶シリコン層1aから
浮いて振動可能に形成されている。As described above, the vibrating body 2, the supporting beam 2a, and the movable comb-teeth electrode 2b are formed so that the lower silicon oxide layer 1b is removed by etching so as to float from the single crystal silicon layer 1a and vibrate. ing.
【0015】この加速度センサ10の機能部は以上のよ
うな構成よりなり、振動体2の矢印方向(図2において
例えば上部)を移動体の進行方向に向けて搭載すると、
移動体の加速度を検知することができる。即ち、加速度
が生じると、振動体2はその慣性のために加速に追随で
きず、可動櫛歯電極2bと固定櫛歯電極4aとは接近し
て、その間に形成される静電容量が大きくなる。この静
電容量の変化量を電圧変換して加速度が求められる。The functional part of the acceleration sensor 10 is constructed as described above. When the direction of the arrow of the vibrating body 2 (for example, the upper part in FIG. 2) is mounted in the traveling direction of the moving body,
The acceleration of the moving object can be detected. That is, when acceleration occurs, the vibrating body 2 cannot follow the acceleration due to its inertia, and the movable comb electrode 2b and the fixed comb electrode 4a come close to each other and the capacitance formed therebetween increases. . The acceleration is obtained by converting the amount of change in the capacitance into a voltage.
【0016】図3において、5kはパイレックスガラス
基板よりなる厚手の上部基板で、裏面側に振動体2など
の振動部を蓋被する凹部5aと、半田バンプ形成用の複
数個の貫通した孔5bとを有する。なお、この上部基板
5kは後工程で表面を研磨されて厚みが薄く加工されて
薄手の上部基板5となる。そして、図1に示す上部基板
5は図3のY−Y線断面における形態を示すものであ
る。In FIG. 3, reference numeral 5k denotes a thick upper substrate made of a Pyrex glass substrate, a concave portion 5a for covering a vibrating portion such as the vibrating body 2 on the back side, and a plurality of through holes 5b for forming solder bumps. And It should be noted that the upper substrate 5k is polished in a later step and is processed to have a small thickness to become a thin upper substrate 5. The upper substrate 5 shown in FIG. 1 shows a form in a cross section taken along line YY of FIG.
【0017】図2に示す下部基板1の上には、図3に示
す厚手の上部基板5kが、図4に示すように、即ち、下
部基板1に形成された下地電極e1が上部基板5kの孔
5bの中央部に位置するように、陽極接合などにより貼
り合わされる。ついで、上部基板5kの表面を薄く研磨
して薄手の上部基板5に加工する。On the lower substrate 1 shown in FIG. 2, a thick upper substrate 5k shown in FIG. 3 is provided as shown in FIG. 4, that is, a base electrode e1 formed on the lower substrate 1 is provided on the lower substrate 1k. It is bonded by anodic bonding or the like so as to be located at the center of the hole 5b. Next, the surface of the upper substrate 5k is thinly polished and processed into a thin upper substrate 5.
【0018】つぎに、孔5bに半田クリームを印刷し
て、孔5bに半田クリームを充填する。その後、半田ク
リームを加熱溶融することにより、半田をその表面張力
により球体状に凝集させて、図1に示すように、孔5b
(上部基板5)から突出する半田バンプb1を下地電極
e1上に形成する。この半田バンプb1は、半田の濡れ
性が孔5bを形成する上部基板5と固定電極4(3)と
は悪く、下地電極e1とはよいので、半田が下地電極e
1上に凝集して球体状に形成される。Next, solder cream is printed in the holes 5b, and the holes 5b are filled with the solder cream. Thereafter, the solder cream is heated and melted to agglomerate the solder into a spherical shape due to its surface tension, and as shown in FIG.
The solder bump b1 protruding from the (upper substrate 5) is formed on the base electrode e1. This solder bump b1 is poor in wettability of the solder between the upper substrate 5 and the fixed electrode 4 (3) in which the hole 5b is formed, and is good as the base electrode e1.
1 to form a sphere.
【0019】つぎに、上記半田バンプb1の形成につい
て詳細に説明する。図6、図1および図2において、下
部基板1の単結晶シリコン層1cにより形成された固定
電極4(3)の上に、半田バンプ形成用の下地電極e1
をリフトオフ法により形成する。この下地電極e1は、
直径が200μmの円形で、固定電極4(3)に接触す
る側から、厚みが50nmのクロム(Cr)、同じく1
00nmの白金(Pt)、同じく200nmの金(A
u)の3層の金属膜よりなる。図3に示すように、厚み
が300μmのパイレックスガラス基板よりなる厚手の
上部基板5kに、サンドブラスト加工などにより、直径
が500μmの孔5bを形成する。そして、図7および
図4に示すように、この孔5bの中央部に下地電極e1
が位置するように、陽極接合により下部基板1と上部基
板5kを貼り合わせる。Next, the formation of the solder bump b1 will be described in detail. 6, FIG. 1 and FIG. 2, a base electrode e1 for forming a solder bump is formed on a fixed electrode 4 (3) formed by a single crystal silicon layer 1c of a lower substrate 1.
Is formed by a lift-off method. This base electrode e1 is
From the side in contact with the fixed electrode 4 (3), a chromium (Cr) having a thickness of 50 nm,
00 nm platinum (Pt) and 200 nm gold (A
u) composed of three metal films. As shown in FIG. 3, a hole 5b having a diameter of 500 μm is formed in a thick upper substrate 5k made of a Pyrex glass substrate having a thickness of 300 μm by sandblasting or the like. As shown in FIGS. 7 and 4, a base electrode e1 is provided at the center of the hole 5b.
Is bonded to the lower substrate 1 and the upper substrate 5k by anodic bonding.
【0020】図8に示すように、厚みが300μmの厚
手の上部基板5kの表面を機械研磨して厚みが80μm
の薄手の上部基板5とする。なお、この研磨のとき、下
地電極e1を汚損から防止するため、孔5b内にワック
スなどを充填して暫時保護してもよい。また、この機械
研磨のとき、研磨の砥流が、図5に示す凹部5aに侵入
する懸念はない。それは、下部基板1(1c、3、4)
と上部基板5kとが陽極接合により一体に接合されてい
るからである。As shown in FIG. 8, the surface of a thick upper substrate 5k having a thickness of 300 μm is mechanically polished to a thickness of 80 μm.
Thin upper substrate 5. During this polishing, the holes 5b may be filled with wax or the like for temporary protection in order to prevent the base electrode e1 from being soiled. Further, at the time of this mechanical polishing, there is no concern that the polishing flow of the polishing enters the concave portion 5a shown in FIG. It is the lower substrate 1 (1c, 3, 4)
This is because the upper substrate 5k and the upper substrate 5k are integrally joined by anodic bonding.
【0021】図9に示すように、半田クリームを上部基
板5に印刷して、孔5bに半田クリーム6を充填する。As shown in FIG. 9, a solder cream is printed on the upper substrate 5, and the holes 5b are filled with the solder cream 6.
【0022】図10に示すように、半田クリーム6をリ
フロー炉などにより加熱溶融させ、その溶剤を蒸発させ
て半田をその表面張力により球体状に凝集させて、下地
電極e1上に半田バンプb1を形成する。この半田バン
プb1の形状は、下地電極e1の直径が200μm、上
部基板5の厚みが80μm、孔5bの直径が500μm
に対し、高さが約200μm、幅が約300μmの球体
状となる。したがって、この形成された半田バンプb1
は、孔5bから約120μm突出しており、これによ
り、半田バンプ接続電子部品を、図示しない実装基板に
接続することができる。なお、半田バンプb1の高さ及
び幅などの形状は、下地電極e1の大きさ、孔5bの大
きさ及び高さ、使用する半田クリームの量、半田の組
成、印刷条件などにより決定される。As shown in FIG. 10, the solder cream 6 is heated and melted in a reflow oven or the like, the solvent is evaporated, and the solder is aggregated into a sphere by the surface tension, so that the solder bump b1 is formed on the base electrode e1. Form. The shape of the solder bump b1 is such that the diameter of the base electrode e1 is 200 μm, the thickness of the upper substrate 5 is 80 μm, and the diameter of the hole 5b is 500 μm.
On the other hand, it has a spherical shape with a height of about 200 μm and a width of about 300 μm. Therefore, the formed solder bump b1
Protrudes from the hole 5b by about 120 μm, whereby the solder bump connection electronic component can be connected to a mounting board (not shown). The shape such as the height and width of the solder bump b1 is determined by the size of the base electrode e1, the size and height of the hole 5b, the amount of solder cream to be used, the composition of the solder, the printing conditions, and the like.
【0023】[0023]
【発明の効果】請求項1に記載の半田バンプ接続電子部
品の発明は、下部基板に引出電極を兼ねる下地電極を形
成し、この下地電極上に上部基板の孔から突出する半田
バンプを形成しているので、従来のように、下部基板に
引出電極を形成し、上部基板に半田バンプ形成用の下地
電極を形成する必要が無く、また、これらの引出電極と
下地電極とを接続する配線パターンを設ける必要も無い
ので、小形化を実現することができる。According to the first aspect of the present invention, there is provided an electronic component connected to a solder bump, wherein a lower electrode serving as an extraction electrode is formed on a lower substrate, and a solder bump projecting from a hole of the upper substrate is formed on the lower electrode. Therefore, there is no need to form a lead electrode on the lower substrate and form a base electrode for forming a solder bump on the upper substrate, as in the conventional case. Since there is no need to provide a small size, miniaturization can be realized.
【0024】請求項2に記載の半田バンプ接続電子部品
の製造方法の発明は、半田バンプ形成用の半田クリーム
を上部基板に形成した孔内に充填し、この半田クリーム
を加熱溶融することで、下地電極上に半田をその表面張
力により球体状に凝集して孔から突出する半田バンプを
形成する。したがって、本発明においては、孔を有する
上部基板が半田クリーム印刷用のメタルマスクの機能を
果たし、従来必要としていたメタルマスクが不必要とな
る。また、本発明においては、半田バンプを形成する下
地電極が引出電極の機能も兼ねるので、従来のように、
引出電極と下地電極を別々に形成する必要もなく、した
がって、これらを接続する配線パターンも不必要とな
る。According to a second aspect of the invention, there is provided a method of manufacturing a solder bump connection electronic component, wherein a solder cream for forming a solder bump is filled in a hole formed in an upper substrate, and the solder cream is heated and melted. Solder is aggregated in a spherical shape on the base electrode by the surface tension to form a solder bump protruding from the hole. Therefore, in the present invention, the upper substrate having holes functions as a metal mask for solder cream printing, and the metal mask conventionally required becomes unnecessary. Further, in the present invention, the underlying electrode for forming the solder bump also functions as an extraction electrode.
There is no need to separately form the extraction electrode and the base electrode, and therefore, a wiring pattern for connecting them is unnecessary.
【図1】 本発明の半田バンプ接続電子部品の一実施例
としての加速度センサの断面形態図FIG. 1 is a cross-sectional view of an acceleration sensor as one embodiment of a solder bump connection electronic component of the present invention.
【図2】 図1に示す本実施例の下部基板の平面図FIG. 2 is a plan view of a lower substrate of the embodiment shown in FIG. 1;
【図3】 図1に示す本実施例の上部基板の研磨前の平
面図FIG. 3 is a plan view of the upper substrate of the present embodiment shown in FIG. 1 before polishing.
【図4】 図2に示す下部基板の上に、図3に示す研磨
前の上部基板を陽極接合により貼り合わせた平面図FIG. 4 is a plan view in which the upper substrate before polishing shown in FIG. 3 is bonded to the lower substrate shown in FIG. 2 by anodic bonding;
【図5】 図4において上部基板を研磨した後のZ−Z
線断面形態図FIG. 5 shows ZZ after polishing the upper substrate in FIG.
Line sectional view
【図6】 半田バンプの形成の態様を示すもので、固定
電極に下地電極を形成する工程図FIG. 6 is a view showing a mode of forming a solder bump, and is a process diagram of forming a base electrode on a fixed electrode.
【図7】 同じく、孔を形成した厚手の上部基板を下部
基板に陽極接合により貼り合わせる工程図FIG. 7 is also a process diagram in which a thick upper substrate having holes formed thereon is bonded to a lower substrate by anodic bonding.
【図8】 同じく、厚手の上部基板をその表面を研磨し
て薄く形成する工程図FIG. 8 is also a process diagram of forming a thin upper substrate by polishing its surface to be thin.
【図9】 同じく、上部基板の孔内に半田クリームを充
填する工程図FIG. 9 is also a process diagram of filling a solder cream into a hole of the upper substrate.
【図10】 同じく、半田クリームを加熱溶融して半田
をその表面張力により球体状に凝集させて半田バンプを
形成する工程図FIG. 10 is a process chart of forming a solder bump by heating and melting a solder cream and agglomerating the solder into a sphere by the surface tension of the solder cream.
【図11】 従来の半田バンプ接続電子部品としての加
速度センサの断面形態図FIG. 11 is a sectional view of an acceleration sensor as a conventional solder bump connection electronic component.
1 下部基板 1a 単結晶シリコン層 1b 酸化シリコン層 1c 単結晶シリコン層 2 振動体 2a 支持梁 2b 可動櫛歯電極 3、4 固定電極 4a 固定櫛歯電極 5 上部基板 5a 凹部 5b 孔 6 半田クリーム e1 下地電極 b1 半田バンプ Reference Signs List 1 lower substrate 1a single-crystal silicon layer 1b silicon oxide layer 1c single-crystal silicon layer 2 vibrator 2a support beam 2b movable comb electrode 3, 4 fixed electrode 4a fixed comb electrode 5 upper substrate 5a recess 5b hole 6 solder cream e1 base Electrode b1 Solder bump
Claims (2)
下地電極が、上部基板に形成した孔内に位置するよう
に、前記下部基板と前記上部基板とが貼り合わされ、前
記下地電極には前記孔の直径より狭い幅を有し、かつ、
前記上部基板の厚みより厚い高さを有する前記半田バン
プが形成されて前記孔から突出している半田バンプ接続
電子部品。The lower substrate and the upper substrate are bonded to each other such that a lower electrode for solder bump connection formed on the lower substrate is positioned in a hole formed in the upper substrate. Has a width smaller than the diameter of the hole, and
The solder bump connection electronic component, wherein the solder bump having a height greater than the thickness of the upper substrate is formed and protrudes from the hole.
を形成する工程と、 前記下地電極が、上部基板に形成した孔内に位置するよ
うに、前記上部基板を前記下部基板に貼り合わせる工程
と、 半田クリームを前記孔内に充填する工程と、 前記半田クリームを加熱溶融して半田を凝集させ、前記
下地電極上に半田バンプを形成して前記孔より突出させ
る工程と、よりなる半田バンプ接続電子部品の製造方
法。2. A step of forming a base electrode for solder bump connection on the lower substrate, and a step of bonding the upper substrate to the lower substrate such that the base electrode is located in a hole formed in the upper substrate. Filling the holes with solder cream; heating and melting the solder cream to agglomerate the solder, forming solder bumps on the base electrode and projecting the solder bumps out of the holes; Manufacturing method for connecting electronic components.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9005575A JPH10209162A (en) | 1997-01-16 | 1997-01-16 | Electronic part for solder bump connection and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9005575A JPH10209162A (en) | 1997-01-16 | 1997-01-16 | Electronic part for solder bump connection and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH10209162A true JPH10209162A (en) | 1998-08-07 |
Family
ID=11615028
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9005575A Pending JPH10209162A (en) | 1997-01-16 | 1997-01-16 | Electronic part for solder bump connection and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH10209162A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006098206A (en) * | 2004-09-29 | 2006-04-13 | Kyocera Corp | Pressure detection device package and pressure detection device |
JP2008101980A (en) * | 2006-10-18 | 2008-05-01 | Denso Corp | Capacitance-type semiconductor sensor device |
JP2008135795A (en) * | 1999-03-19 | 2008-06-12 | Denso Corp | Semiconductor device, and method for producing the same |
JP2009170892A (en) * | 2008-01-11 | 2009-07-30 | Qimonda Ag | Solder contacts and method for forming the same |
-
1997
- 1997-01-16 JP JP9005575A patent/JPH10209162A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008135795A (en) * | 1999-03-19 | 2008-06-12 | Denso Corp | Semiconductor device, and method for producing the same |
JP4636096B2 (en) * | 1999-03-19 | 2011-02-23 | 株式会社デンソー | Semiconductor device and manufacturing method thereof |
JP2006098206A (en) * | 2004-09-29 | 2006-04-13 | Kyocera Corp | Pressure detection device package and pressure detection device |
JP4535825B2 (en) * | 2004-09-29 | 2010-09-01 | 京セラ株式会社 | Pressure detection device package and pressure detection device |
JP2008101980A (en) * | 2006-10-18 | 2008-05-01 | Denso Corp | Capacitance-type semiconductor sensor device |
US8156804B2 (en) | 2006-10-18 | 2012-04-17 | Denso Corporation | Capacitive semiconductor sensor |
JP2009170892A (en) * | 2008-01-11 | 2009-07-30 | Qimonda Ag | Solder contacts and method for forming the same |
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