JPH10200153A - Optical receiving/transmitting module - Google Patents
Optical receiving/transmitting moduleInfo
- Publication number
- JPH10200153A JPH10200153A JP248797A JP248797A JPH10200153A JP H10200153 A JPH10200153 A JP H10200153A JP 248797 A JP248797 A JP 248797A JP 248797 A JP248797 A JP 248797A JP H10200153 A JPH10200153 A JP H10200153A
- Authority
- JP
- Japan
- Prior art keywords
- solder
- receiving
- emitting element
- substrate
- light receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title description 29
- 229910000679 solder Inorganic materials 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000011800 void material Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 17
- 239000004065 semiconductor Substances 0.000 abstract description 17
- 229910052710 silicon Inorganic materials 0.000 abstract description 17
- 239000010703 silicon Substances 0.000 abstract description 17
- 239000013307 optical fiber Substances 0.000 abstract description 9
- 239000000853 adhesive Substances 0.000 abstract description 4
- 230000001070 adhesive effect Effects 0.000 abstract description 4
- 230000002459 sustained effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000005304 joining Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000010953 base metal Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
- H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
Landscapes
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
- Led Device Packages (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は基板上に半導体レー
ザ等の受/発光素子が固着された受/発信光モジュール
に関する、さらに詳しくは受/発光素子が基板に簡単に
精度良く固着される受/発信光モジュールに関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light receiving / transmitting optical module having a light receiving / emitting element such as a semiconductor laser fixed on a substrate, and more particularly, to a light receiving / light emitting element in which the light receiving / light emitting element is simply and accurately fixed to a substrate. / Transmission light module.
【0002】[0002]
【従来の技術】半導体レーザ等の受/発光素子と光導波
路、例えば光ファイバとの接続の一つに図6に示す受/
発信光モジュールがある。図6に示す受/発信光モジュ
ール60において、61は半導体レーザ等の受/発光素
子、62はシリコン等からなる基板である。受/発光素
子61と基板62は通常半田Hで固着されている。また
光ファイバ63は基板62に設けられたV溝65に嵌め
込まれて接着剤等によって固着されている。上記の構造
の受/発信光モジュールにおける受/発光素子と光導波
路の接続部は構造が簡単であるので広く実用化されてい
る。受/発光素子61と基板62の半田付けの方法とし
て図7(イ)、(ロ)に示す方法がある。図7(イ)は
熱圧着法、(ロ)はリフロー法である。2. Description of the Related Art One of the connections between a light receiving / emitting element such as a semiconductor laser and an optical waveguide, for example, an optical fiber, is shown in FIG.
There is a transmitting light module. In the receiving / transmitting optical module 60 shown in FIG. 6, 61 is a receiving / emitting element such as a semiconductor laser, and 62 is a substrate made of silicon or the like. The light receiving / light emitting element 61 and the substrate 62 are usually fixed with solder H. The optical fiber 63 is fitted in a V-shaped groove 65 provided in the substrate 62 and fixed by an adhesive or the like. The connecting portion between the light receiving / light emitting element and the optical waveguide in the light receiving / transmitting optical module having the above structure has a simple structure and is widely used. As a method for soldering the light receiving / light emitting element 61 and the substrate 62, there is a method shown in FIGS. FIG. 7A shows a thermocompression bonding method, and FIG. 7B shows a reflow method.
【0003】図7(イ)の熱圧着法は、受/発光素子6
1と基板62の間に装着した半田Hを作業基台内に設け
られたヒータ67で加熱して溶融し、同時に両者に圧力
を加えて固着する。また図7(ロ)のリフロー法は、受
/発光素子61の下部に予め装着された半田Hを有した
受/発光素子61を基板62の上に位置決め固定して図
示していないリフロー炉内で加熱して受/発光素子61
と基板62を固着する。図7(イ)、(ロ)に示すいず
れの方法であっても、基板62の下地金属面および受/
発光素子61の下部半田接着面は平面となっていて、両
者の間に溶融液化した半田Hが浸透し、ある厚みの半田
層を形成する。[0003] The thermocompression bonding method shown in FIG.
The solder H mounted between the substrate 1 and the substrate 62 is heated and melted by a heater 67 provided in the work base, and is simultaneously fixed by applying pressure to both. In the reflow method shown in FIG. 7B, the receiving / light emitting element 61 having the solder H previously mounted below the receiving / light emitting element 61 is positioned and fixed on the substrate 62, and is placed in a reflow furnace (not shown). Receiving / light emitting element 61
And the substrate 62 are fixed. 7A and 7B, the base metal surface of the substrate 62 and the
The lower solder bonding surface of the light emitting element 61 is a flat surface, and the melted and liquefied solder H permeates between the two to form a solder layer having a certain thickness.
【0004】[0004]
【発明が解決しようとする課題】ここで、半田層の厚み
は接続すべき光ファイバ63との位置関係から常に一定
であることが要求される。このため通常半田Hの量を一
定にして半田層の厚みを一定にし、位置精度を保ように
している。受/発信光モジュールにおける受/発光素子
61と光ファイバ63の実装位置精度の許容度は、光軸
ずれの許容度で決まり、望ましくは水平/垂直両方向と
も1μm以下である。Here, it is required that the thickness of the solder layer is always constant due to the positional relationship with the optical fiber 63 to be connected. For this reason, usually, the amount of the solder H is kept constant, the thickness of the solder layer is kept constant, and the positional accuracy is maintained. The tolerance of the mounting position accuracy of the receiving / emitting element 61 and the optical fiber 63 in the receiving / transmitting optical module is determined by the tolerance of the optical axis deviation, and is desirably 1 μm or less in both the horizontal and vertical directions.
【0005】垂直方向を考えると光ファイバ63を固定
するV溝65の位置(深さ)精度と受/発光素子61の
実装位置(高さ)精度の和であり、受/発信光モジュー
ルにおける受/発光素子61の高さ精度目標はサブミク
ロンレベルが要求される。従来技術においては、半田量
のばらつきにより半田層厚のばらつきや、半田の凝固不
均一による傾きの発生があるなど受/発光素子61の高
さをサブミクロン以下に制御するのは困難であった。Considering the vertical direction, it is the sum of the accuracy of the position (depth) of the V-groove 65 for fixing the optical fiber 63 and the accuracy of the mounting position (height) of the light receiving / emitting element 61. The sub-micron level is required for the height accuracy target of the light emitting element 61. In the prior art, it was difficult to control the height of the light receiving / light emitting element 61 to submicron or less, for example, there was a variation in the thickness of the solder layer due to a variation in the amount of solder, and an inclination due to uneven solidification of the solder. .
【0006】本発明は上記の課題を解決し、基板上に受
/発光素子を簡単に精度良く位置決め固着することので
きる受/発信光モジュールを提供することを目的とする
ものである。SUMMARY OF THE INVENTION It is an object of the present invention to solve the above-mentioned problems and to provide a receiving / transmitting optical module which can easily position and fix a receiving / light emitting element on a substrate with high accuracy.
【0007】[0007]
【課題を解決するための手段】本発明は上記の課題を解
決するために以下のような手段を有している。The present invention has the following means to solve the above problems.
【0008】本発明の請求項1の受/発信光モジュール
は、基板上に受/発光素子が半田によって固着された受
/発信光モジュールであって、前記半田は前記基板また
は前記受/発光素子の少なくともいずれか一方に設けら
れた窪み内に充填されて前記基板と前記受/発光素子の
それぞれの接合面が密着して固着されていることを特徴
とする。The receiving / transmitting optical module according to claim 1 of the present invention is a receiving / transmitting optical module having a receiving / emitting element fixed on a substrate by soldering, wherein the solder is the substrate or the receiving / emitting element. And the bonding surfaces of the substrate and the light receiving / light emitting element are tightly fixed to each other by being filled in a recess provided in at least one of the above.
【0009】本発明の請求項2の受/発信光モジュール
は、窪み内に充填されている半田は窪み内に空隙を有し
た状態で充填されていることを特徴とする。According to a second aspect of the present invention, there is provided a receiving / transmitting optical module, wherein the solder filled in the recess is filled with a void in the recess.
【0010】本発明の請求項1の受/発信光モジュール
によれば、基板と受/発光素子は少なくともいずれか一
方に設けられた窪み内に充填されている半田によって両
者の接合面が密着して固着されているので、半田層によ
る浮きがなくなり両者の位置関係は常に一定に保ことが
できる。例えば、仮に窪み内に充填されている半田の量
が窪みの容積を越えた場合であっても両者を加圧して両
者の接合面を密着状態にして接合面の間の半田を接合面
外に押し出すことで半田層による浮きがなくなり両者の
位置関係を簡単に一定に保ことができる。両者の接合面
の面積は窪みの分小さくなっているので容易に接合面の
間の半田を接合面外に押し出すことができる。According to the receiving / transmitting light module of the first aspect of the present invention, the bonding surface of the substrate and the receiving / light emitting element are brought into close contact with each other by the solder filled in the recess provided in at least one of them. As a result, the solder layer does not float and the positional relationship between the two can be always kept constant. For example, even if the amount of solder filled in the depression exceeds the volume of the depression, both are pressed to bring the joining surfaces of both into close contact, and the solder between the joining surfaces is out of the joining surface. By extruding, the floating due to the solder layer is eliminated, and the positional relationship between the two can be easily kept constant. Since the area of the joint surface between the two is reduced by the depression, the solder between the joint surfaces can be easily pushed out of the joint surface.
【0011】本発明の請求項2の受/発信光モジュール
によれば、半田は窪みの容積を越えない範囲で空隙を有
した状態で充填されているので、窪み内の半田は基板と
受/発光素子の接合面に漏れ出ることない。従って半田
層による浮きがなくなり常に両者が密着して固定される
ので両者の位置関係は常に一定に保ことができる。半田
は窪みの容積を越えない範囲に設定すればよいので半田
の充填量の管理が容易となり、受/発信光モジュールの
生産性が向上する。According to the receiving / transmitting optical module of the second aspect of the present invention, since the solder is filled with a void within a range not to exceed the volume of the recess, the solder in the recess is connected to the substrate / receiver. It does not leak to the bonding surface of the light emitting element. Therefore, there is no floating due to the solder layer, and the two are always closely contacted and fixed, so that the positional relationship between the two can always be kept constant. Since the solder may be set within a range not exceeding the volume of the depression, the management of the solder filling amount is facilitated, and the productivity of the receiving / transmitting optical module is improved.
【0012】[0012]
【発明の実施の形態】以下に本発明の受/発信光モジュ
ールの実施の形態を図1ないし図 を参照してより詳細
に説明する。 (実施の形態1)図1に示す受/発信光モジュール10
はシリコン基板11の上に半導体レーザ12が半田Hに
より固着されたものである。半田Hはシリコン基板11
の面に設けられた窪み13に空隙Sを有して充填されて
いて受/発光素子12の下面とシリコン基板11とを固
着している。窪み13の平面積の大きさは半導体レーザ
12の下面の面積の大きさより若干小さめとなってい
る。図1において、14は光ファイバで、光ファイバ1
4はシリコン基板11に形成されたV溝15内に装着さ
れ接着剤で固着され、押さえ板16によって固定保護さ
れている。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a receiving / transmitting optical module according to the present invention will be described below in detail with reference to FIGS. (Embodiment 1) A receiving / transmitting optical module 10 shown in FIG.
The semiconductor laser 12 is fixed on a silicon substrate 11 by solder H. Solder H is silicon substrate 11
The cavity 13 provided on the surface is filled with a gap S to fix the lower surface of the light receiving / emitting element 12 to the silicon substrate 11. The plane area of the depression 13 is slightly smaller than the area of the lower surface of the semiconductor laser 12. In FIG. 1, reference numeral 14 denotes an optical fiber,
4 is mounted in a V-groove 15 formed in the silicon substrate 11, fixed with an adhesive, and fixed and protected by a holding plate 16.
【0013】図2および図3は上記の受/発信光モジュ
ール10の製造方法の一実施例である。シリコン基板1
1の所定の位置に所定の深さの窪み13を方向性エッチ
ングにより形成する。窪み13の大きさはシリコン基板
11に載置する半導体レーザ12の下面の面積の大きさ
より若干小さめとする。窪み13の底にAuSnからな
る半田バンプH0 を形成する。半田バンプH0 の形成は
半田チップのリフローにより形成することができる。半
田バンプH0 の高さを図3に示すように窪み13の深さ
より高くするが、半田バンプH0 の量は窪み13の容積
より少なくし、半田バンプH0 が溶融した際に窪み13
より溢れない量とする。半田バンプH0 をシリコン基板
11の窪み13に形成した状態で載置する。半導体レー
ザ12は窪み13を目印にすることによって水平位置精
度は1μm以内に制御が可能となる。FIGS. 2 and 3 show one embodiment of a method for manufacturing the above-mentioned receiving / transmitting optical module 10. FIG. Silicon substrate 1
A dent 13 having a predetermined depth is formed at a predetermined position of the substrate 1 by directional etching. The size of the recess 13 is slightly smaller than the size of the area of the lower surface of the semiconductor laser 12 mounted on the silicon substrate 11. A solder bump H0 made of AuSn is formed at the bottom of the depression 13. The solder bumps H0 can be formed by reflowing the solder chips. The height of the solder bump H0 is made higher than the depth of the depression 13 as shown in FIG. 3, but the amount of the solder bump H0 is made smaller than the volume of the depression 13 so that when the solder bump H0 is melted, the depression 13
Make the amount less overflowing. The solder bump H0 is placed in a state of being formed in the depression 13 of the silicon substrate 11. The horizontal position accuracy of the semiconductor laser 12 can be controlled within 1 μm by using the depression 13 as a mark.
【0014】上記の状態で両者を加熱圧着する。加熱お
よび圧着により半田バンプH0 は軟化溶融して窪み13
内に広がり、半導体レーザ12の下面がシリコン基板1
1の上面と接し、最終的に密着する。両者が密着した状
態で加熱を終了すると半田Hは凝固を開始する。ここ
で、半田Hの凝縮の際に半田Hが熱収縮して半導体レー
ザ12を下方に引っ張る力が作用するので半導体レーザ
12はシリコン基板11から浮き上がることなく確実に
密着して固着される。ついで、光ファイバ14をV溝1
5内に装着して接着剤を充填して押さえ板16によって
固定し、受/発信光モジュール10が製造される。In the above state, both are heat-pressed. The solder bump H0 is softened and melted by heating and pressure bonding to form a depression 13
And the lower surface of the semiconductor laser 12 is
1 and comes into close contact with the upper surface of the substrate. When the heating is completed in a state where both are in close contact with each other, the solder H starts to solidify. Here, when the solder H is condensed, the solder H thermally contracts and a force pulling the semiconductor laser 12 downward acts, so that the semiconductor laser 12 is securely adhered and adhered without being lifted from the silicon substrate 11. Then, the optical fiber 14 is connected to the V-groove 1
5, the receiving / transmitting light module 10 is manufactured by filling the inside with the adhesive and fixing it with the holding plate 16.
【0015】(実施の形態2)図4および図5(イ)、
(ロ)は他の実施の形態を示す受/発信光モジュール2
0の製造工程の一部を示す斜視図である。図4に示す受
/発信光モジュール20は、シリコン基板21上に半導
体レーザ22とSiO2 導波路23で構成される送信側
およびSiO2 導波路24と端面入射型フォトダイオー
ド25で構成される受信側が一体に形成されたものであ
る。半導体レーザ22およびフォトダイオード25の下
面の接合面の四隅に半田ブロックH1 、H2 が形成され
ている。本実施の形態においては、シリコン基板21の
窪み26は単に半田溜まりとして作用するのみならず、
図5(イ)、(ロ)に示すように半田ブロックH1 、H
2 の嵌合孔となっていて、シリコン基板21と半導体レ
ーザ22およびフォトダイオード25の位置合わせ孔と
して作用する。(Embodiment 2) FIGS. 4 and 5 (a),
(B) is a receiving / transmitting optical module 2 showing another embodiment.
0 is a perspective view showing a part of a manufacturing process of No. 0. FIG. The receiving / transmitting optical module 20 shown in FIG. 4 has a transmitting side composed of a semiconductor laser 22 and a SiO 2 waveguide 23 on a silicon substrate 21 and a receiving side composed of an SiO 2 waveguide 24 and an end face incident type photodiode 25. The sides are integrally formed. Solder blocks H1 and H2 are formed at the four corners of the joint surface on the lower surface of the semiconductor laser 22 and the photodiode 25. In the present embodiment, the depression 26 of the silicon substrate 21 not only functions as a solder pool,
As shown in FIGS. 5 (a) and 5 (b), the solder blocks H1, H
2 and serves as a positioning hole for the silicon substrate 21, the semiconductor laser 22, and the photodiode 25.
【0016】半田ブロックH1 、H2 は半導体レーザ2
2およびフォトダイオード25のウエハー工程におい
て、AuSn蒸着またはスパッタ成膜後にフォトリソグ
ラフィーによりエッチングするので位置精度は1μm以
下にすることは十分可能である。なお、半田ブロックH
1 、H2 の高さが窪み26の深さより高いことは実施の
形態1と同様である。以下、両者を加熱圧着して固着す
ることは実施の形態1と同様であるので詳細な説明は省
略する。また、本実施の形態においても半田Hは窪み2
6内に空隙Sを有して充填固着されていることは実施の
形態1と同様である。The solder blocks H 1 and H 2 correspond to the semiconductor laser 2.
In the wafer process of the photodiode 2 and the photodiode 25, etching is performed by photolithography after AuSn evaporation or sputter deposition, so that the positional accuracy can be sufficiently reduced to 1 μm or less. The solder block H
1, the height of H2 is higher than the depth of the depression 26, as in the first embodiment. Hereinafter, since both are bonded by heating and pressure bonding in the same manner as in the first embodiment, detailed description will be omitted. Also, in the present embodiment, the solder H
6 is filled and fixed with a void S in the same manner as in the first embodiment.
【0017】なお、上記の各実施の形態において、半田
溜まりとなる窪みは基板側に設けられている例について
説明したが、窪みは受/発光素子側に設けられていても
良いし、両者に設けられていても良い。また、窪みに充
填される半田は窪みの容積を越えない方が望ましいが、
例えば容積を越えた場合であっても、両者の接合面の面
積は窪みの分小さくなっているので容易に接合面の間の
半田を接合面外に押し出すことができるので、両者の接
合面を密着して固着することが可能となる。In each of the above embodiments, an example has been described in which the depression serving as a solder pool is provided on the substrate side. However, the depression may be provided on the light receiving / light emitting element side, or both may be provided. It may be provided. Also, it is desirable that the solder filled in the dent does not exceed the volume of the dent,
For example, even if the capacity is exceeded, the area of the joint surface between the two is reduced by the depression, so that the solder between the joint surfaces can be easily pushed out of the joint surface. It becomes possible to adhere and fix.
【0018】[0018]
【発明の効果】以上述べたように、本発明の請求項1の
受/発信光モジュールによれば、基板と受/発光素子は
少なくともいずれか一方に設けられた窪み内に充填され
ている半田によって両者の接合面が密着して固着されて
いるので、半田層による浮きがなくなり両者の位置関係
は常に一定に保ことができる。例えば、仮に窪み内に充
填されている半田の量が窪みの容積を越えた場合であっ
ても、 両者の接合面の面積は窪みの分小さくなってい
るので容易に接合面の間の半田を接合面外に押し出すこ
とができ、両者の接合面を密着状態にして両者の位置関
係を簡単に一定に保ことができる。As described above, according to the receiving / transmitting light module according to the first aspect of the present invention, the substrate and the receiving / light emitting element are filled in at least one of the recesses provided in the solder. As a result, the bonding surfaces of the two are closely adhered and fixed, so that the floating due to the solder layer is eliminated and the positional relationship between the two can always be kept constant. For example, even if the amount of solder filled in the depression exceeds the volume of the depression, the area of the joint surface between the two is reduced by the depression, so the solder between the joint surfaces can be easily removed. It can be extruded out of the joining surface, and the joining surface of both can be kept in a close contact state, and the positional relationship between them can be easily kept constant.
【0019】本発明の請求項2の受/発信光モジュール
によれば、半田は窪みの容積を越えない範囲で空隙を有
した状態で充填されているので、窪み内の半田は基板と
受/発光素子の接合面に漏れ出ることない。従って半田
層による浮きがなくなり常に両者が密着して固定される
ので両者の位置関係は常に一定に保ことができる。半田
は窪みの容積を越えない範囲に設定すればよいので半田
の充填量の管理が容易となり、受/発信光モジュールの
生産性が向上する。According to the receiving / transmitting optical module of the second aspect of the present invention, since the solder is filled with a void within a range not exceeding the volume of the recess, the solder in the recess is connected to the substrate. It does not leak to the bonding surface of the light emitting element. Therefore, there is no floating due to the solder layer, and the two are always closely contacted and fixed, so that the positional relationship between the two can always be kept constant. Since the solder may be set within a range not exceeding the volume of the depression, the management of the solder filling amount is facilitated, and the productivity of the receiving / transmitting optical module is improved.
【図1】本発明の受/発信光モジュールの一実施の形態
を示す断面図である。FIG. 1 is a sectional view showing an embodiment of a receiving / transmitting optical module of the present invention.
【図2】図1の受/発信光モジュールの製造工程の一部
を示す斜視図である。FIG. 2 is a perspective view showing a part of a manufacturing process of the receiving / transmitting optical module of FIG.
【図3】図1の受/発信光モジュールの製造工程の他の
一部を示す断面図である。FIG. 3 is a sectional view showing another part of the manufacturing process of the receiving / transmitting optical module of FIG. 1;
【図4】本発明の受/発信光モジュールの他の実施の形
態の製造工程の一部を示す斜視図である。FIG. 4 is a perspective view showing a part of a manufacturing process of another embodiment of the receiving / transmitting optical module of the present invention.
【図5】(イ)、(ロ)は図4の受/発信光モジュール
の製造工程の他の一部を示す断面図である。5A and 5B are cross-sectional views illustrating another part of the manufacturing process of the receiving / transmitting optical module of FIG.
【図6】従来の受/発信光モジュールの製造方法の一部
を示す側面図である。FIG. 6 is a side view showing a part of a conventional method for manufacturing a receiving / transmitting optical module.
【図7】(イ)、(ロ)は従来の受/発信光モジュール
の製造方法を示す説明図である。FIGS. 7A and 7B are explanatory views showing a conventional method for manufacturing a receiving / transmitting optical module.
10 受/発信光モジュール 11 シリコン基板 12 半導体レーザ 13 窪み 14 光ファイバ 15 V溝 16 押さえ板 H 半田 S 空隙 Reference Signs List 10 receiving / transmitting optical module 11 silicon substrate 12 semiconductor laser 13 depression 14 optical fiber 15 V groove 16 holding plate H solder S void
Claims (2)
着された受/発信光モジュールであって、前記半田は基
板または受/発光素子の少なくともいずれか一方に設け
られた窪み内に充填されて前記基板と前記受/発光素子
のそれぞれの接合面が密着して固着されていることを特
徴とする受/発信光モジュール。1. A receiving / transmitting light module having a receiving / emitting element fixed on a substrate by solder, wherein the solder is filled in a recess provided in at least one of the substrate and the receiving / emitting element. A receiving / transmitting light module, wherein the respective bonding surfaces of the substrate and the receiving / light-emitting element are closely adhered and fixed.
空隙を有した状態で充填されていることを特徴とする請
求項1に記載の受/発信光モジュール。2. The receiving / transmitting light module according to claim 1, wherein the solder filled in the recess is filled with a void in the recess.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP248797A JPH10200153A (en) | 1997-01-10 | 1997-01-10 | Optical receiving/transmitting module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP248797A JPH10200153A (en) | 1997-01-10 | 1997-01-10 | Optical receiving/transmitting module |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH10200153A true JPH10200153A (en) | 1998-07-31 |
Family
ID=11530727
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP248797A Pending JPH10200153A (en) | 1997-01-10 | 1997-01-10 | Optical receiving/transmitting module |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH10200153A (en) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000079658A1 (en) * | 1999-06-23 | 2000-12-28 | Bookham Technology Plc | Optical transmitter with back facet monitor |
EP0989641A3 (en) * | 1998-09-25 | 2001-11-07 | Japan Aviation Electronics Industry Limited | Optical hybrid integrated device and method of making the same |
JP2002076498A (en) * | 2000-09-01 | 2002-03-15 | Kyocera Corp | Optical mounting substrate and optical module using the same |
EP1487073A3 (en) * | 2003-06-12 | 2005-03-30 | Fanuc Ltd | Mounting of a semiconductor laser device by soldering |
JP2006339212A (en) * | 2005-05-31 | 2006-12-14 | Sony Corp | Semiconductor laser apparatus, heat dissipation member, and support member |
JP2009105161A (en) * | 2007-10-22 | 2009-05-14 | Panasonic Electric Works Co Ltd | Light emitting device |
JP2016533027A (en) * | 2013-10-09 | 2016-10-20 | スコーピオズ テクノロジーズ インコーポレイテッド | Incorporating raw direct bandgap chips into silicon photonic devices |
WO2017026363A1 (en) * | 2015-08-12 | 2017-02-16 | 株式会社村田製作所 | Photoelectric transducer and optical module |
JP2017045528A (en) * | 2015-08-24 | 2017-03-02 | ウシオ電機株式会社 | Light source device and fluorescent plate assembly |
JP2018085496A (en) * | 2016-11-25 | 2018-05-31 | 京セラ株式会社 | Light emitting device package and light emitting device |
JP2019129170A (en) * | 2018-01-22 | 2019-08-01 | ローム株式会社 | LED package |
US11181688B2 (en) | 2009-10-13 | 2021-11-23 | Skorpios Technologies, Inc. | Integration of an unprocessed, direct-bandgap chip into a silicon photonic device |
CN116027502A (en) * | 2023-03-24 | 2023-04-28 | 镭神技术(深圳)有限公司 | Optical coupling package structure and coupling method |
-
1997
- 1997-01-10 JP JP248797A patent/JPH10200153A/en active Pending
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0989641A3 (en) * | 1998-09-25 | 2001-11-07 | Japan Aviation Electronics Industry Limited | Optical hybrid integrated device and method of making the same |
WO2000079658A1 (en) * | 1999-06-23 | 2000-12-28 | Bookham Technology Plc | Optical transmitter with back facet monitor |
JP2002076498A (en) * | 2000-09-01 | 2002-03-15 | Kyocera Corp | Optical mounting substrate and optical module using the same |
EP1487073A3 (en) * | 2003-06-12 | 2005-03-30 | Fanuc Ltd | Mounting of a semiconductor laser device by soldering |
JP2006339212A (en) * | 2005-05-31 | 2006-12-14 | Sony Corp | Semiconductor laser apparatus, heat dissipation member, and support member |
JP2009105161A (en) * | 2007-10-22 | 2009-05-14 | Panasonic Electric Works Co Ltd | Light emitting device |
US11181688B2 (en) | 2009-10-13 | 2021-11-23 | Skorpios Technologies, Inc. | Integration of an unprocessed, direct-bandgap chip into a silicon photonic device |
US12287510B2 (en) | 2009-10-13 | 2025-04-29 | Skorpios Technologies, Inc. | Integration of an unprocessed, direct-bandgap chip into a silicon photonic device |
JP2016533027A (en) * | 2013-10-09 | 2016-10-20 | スコーピオズ テクノロジーズ インコーポレイテッド | Incorporating raw direct bandgap chips into silicon photonic devices |
WO2017026363A1 (en) * | 2015-08-12 | 2017-02-16 | 株式会社村田製作所 | Photoelectric transducer and optical module |
JP2017045528A (en) * | 2015-08-24 | 2017-03-02 | ウシオ電機株式会社 | Light source device and fluorescent plate assembly |
JP2018085496A (en) * | 2016-11-25 | 2018-05-31 | 京セラ株式会社 | Light emitting device package and light emitting device |
JP2019129170A (en) * | 2018-01-22 | 2019-08-01 | ローム株式会社 | LED package |
CN116027502A (en) * | 2023-03-24 | 2023-04-28 | 镭神技术(深圳)有限公司 | Optical coupling package structure and coupling method |
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