JPH10199469A - Electron beam lighting device and electron beam aligner with the lighting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To uniformly illuminate a wide illumination region by irradiating an object with electron beams through an illumination electron optical system having a plurality of electron lenses, and adjusting at least two lenses of a plurality of electron lenses wit information relating to intensity distribution of the electron beams irradiating the object. SOLUTION: An element electron optical system array 3 is formed by arranging a plurality of element electron optical systems comprising a blanking electrode, an opening, and an electron lens in the direction perpendicularly crossing to an optical axis. Electron beams emitted from an electron gun 1 are converted into almost parallel electron beams with a condenser lens 2, and applied to the element electron optical system array 3. The condenser lens 2 consists of electron lenses 2a, 2b, 2c, and by adjusting the focal distance of at least two electron lenses, or the position in the optical axis direction of at least two electron lenses, the intensity distribution of electron beams applied to the element electron optical system array 3 can be adjusted.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam exposure apparatus, and more particularly to an apparatus for irradiating a first object with a light source that emits an electron beam for direct writing on a wafer or exposing a mask or a reticle. And an electron beam exposure apparatus for projecting and exposing the electron beam on a second object through a reduction electron optical system.

[0002]

2. Description of the Related Art Conventionally, electron beam exposure apparatuses include a point beam type apparatus in which a beam is used in the form of a spot and a variable rectangular beam type apparatus in which a rectangular section having a variable size is used.

A point beam type electron beam exposure apparatus is used only for research and development because the throughput is low because drawing is performed using a single electron beam. The variable rectangular beam type electron beam exposure apparatus has a throughput of one to two orders of magnitude higher than that of the point type, but basically a fine pattern of about 0.1μm is highly integrated because it is drawn using a single electron beam. In the case of exposing a pattern clogged with a degree, there are still many problems in terms of throughput.

As an apparatus for solving this problem, a pattern to be drawn is formed as a pattern transmission hole in a stencil mask, and the stencil mask is illuminated with an electron beam, so that a pattern to be drawn through a reduction electron optical system can be formed on a sample surface. There is a stencil mask type electron beam exposure apparatus for transferring the image to a stencil mask. In addition, a substrate having a plurality of openings is illuminated with an electron beam, a plurality of electron beams from the plurality of openings are irradiated on a sample surface, the plurality of electron beams are deflected to scan the sample surface, and a pattern to be drawn. There is a multi-electron beam type exposure apparatus that draws a pattern by individually turning on / off a plurality of electron beams in accordance with the requirements. Both have a feature that the throughput can be further improved because the area exposed at one time, that is, the exposure area is wider than before.

[0005]

However, in a stencil mask type electron beam exposure apparatus, the pattern to be transferred is distorted if the electron beam illuminating the stencil mask is not uniform. In addition, there is a problem in that a pattern to be drawn is distorted when the intensity of a plurality of electron beams varies.

[0006]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional problems, and an embodiment of an electron beam illuminating apparatus according to the present invention has an object using a light source for emitting an electron beam. In an electron beam illuminating device for illuminating, an illumination electron optical system having a plurality of electron lenses for irradiating an electron beam from the light source onto the object, and information on an intensity distribution of the electron beam illuminating the object are obtained. And adjusting means for adjusting at least two of the plurality of electronic lenses based on the information.

The adjusting means adjusts the electro-optical power of at least two of the plurality of electronic lenses.

The adjusting means adjusts the position of at least two of the plurality of electronic lenses in the optical axis direction of the illumination electron optical system.

In one embodiment of the electron beam illuminating apparatus of the present invention, a first object is illuminated by using a light source that emits an electron beam, and an electron beam from the first object is transmitted to a second object via a reduction electron optical system. An electron beam exposure apparatus for projecting and exposing an electron beam from the light source to the first object, an illumination electron optical system having a plurality of electron lenses, It is characterized by comprising means for obtaining information on intensity distribution, and adjusting means for adjusting at least two electronic lenses of the plurality of electronic lenses based on the information.

[0010] The adjusting means adjusts the electro-optical power of at least two of the plurality of electronic lenses.

The adjusting means adjusts the position of at least two of the plurality of electronic lenses in the optical axis direction of the illumination electron optical system.

The first object is characterized in that the first object is a mask in which a pattern is formed by a portion that transmits an electron beam and a portion that does not transmit the electron beam.

[0013] The first object has a plurality of openings, and has means for individually blocking electron beams passing through the plurality of openings.

A plurality of electron optical systems corresponding to the respective apertures for forming intermediate images of the light source from the electron beams passing through the plurality of apertures, respectively; And projecting on the second object via

Each of the plurality of electron optical systems has a means for correcting an aberration generated when the intermediate image is projected on the second object via the reduction electron optical system.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION

First Embodiment [Description of Components of Electron Beam Exposure Apparatus] FIG. 1 is a schematic view of a main part of an electron beam exposure apparatus according to a first embodiment of the present invention.

In FIG. 1, reference numeral 1 denotes an electron gun including a cathode 1a, a grid 1b, and an anode 1c.
Electrons emitted from 1a form a crossover image between grid 1b and anode 1c. (Hereinafter, these crossover images are referred to as light sources.)

Electrons emitted from this light source are focused on a condenser lens 2 whose front focal position is at the light source position.
(The illumination electron lens optical system) converts the electron beams into substantially parallel electron beams. Substantially parallel electron beams are converted to element electron optics arrays
Light 3 The condenser lens 2 is an electronic lens 2
a, 2b, and 2c. Then, the electronic lenses 2a, 2
Whether to adjust the electron optical power (focal length) of at least two electronic lenses b and 2c, or to adjust the position of the condenser lens 2 of at least two electronic lenses 2a, 2b and 2c in the optical axis direction. Alternatively, by adjusting both, it is possible to adjust the intensity distribution of the electron beam illuminated on the elementary electron optical system. This will be described with reference to FIG.

When the intensity of the electron beam emitted from the light source is uniform per unit solid angle, that is, when the light distribution of the light source is uniform, the focal length of the condenser lens 2 is set to f, and the distance from the light source to the optical axis AX is set. When the position at which the electron beam emitted at an angle θ enters the elementary electron optical system 3 via the condenser lens 2 is x, the condenser lens 2 has electron optical characteristics satisfying x = f × θ. Then, the intensity distribution of the electron beam illuminating the elementary electron optical system 3 becomes uniform (solid line in FIG. 2A). Conversely, by adjusting the electron optical characteristics of the condenser lens 2 (broken line in FIG. 2A), the intensity distribution of the electron beam illuminating the element electron optical system can be changed.

The position at which the electron beam emitted from the light source at an angle θ with respect to the optical axis AX when the formula (1) is satisfied enters the elementary electron optical system 3 is defined as an ideal position x (θ). Where x (θ) is incident on the elementary electron optical system 3 via the condenser lens 2, and the ratio of the difference to the ideal position is DIS (θ) = [x (θ) -x (θ)] / x ( θ), DIS (θ)
Is an electron optical characteristic of the condenser lens 2 and can be displayed as shown in FIG. And the electronic lenses 2a, 2
b) adjusting the electro-optical power of at least two electronic lenses of 2c, or adjusting at least two electronic lenses of 2a, 2b and 2c.
By adjusting the position of the two electron lenses in the optical axis direction of the illumination electron optical system, or by adjusting both,
DIS (θ) can be changed as indicated by the arrow in the figure.
Specifically, the excitation current of at least two electron lenses is adjusted, or is adjusted by a drive system shown in FIG. 2A that moves the electron lenses in the optical axis direction.

For example, if the electron optical characteristics of the condenser lens 2 are adjusted and the emission angle θ is further tilted toward the minus side as the emission angle θ is increased, the intensity distribution of the electron beam illuminated on the elementary electron optical system 3 becomes larger than before the adjustment. The intensity of the electron beam increases as the distance from the optical axis AX increases.

Here, when adjusting the electro-optical characteristics of the condenser lens 2, the electro-optical power of the entire system of the condenser lens 2 is made substantially constant, and the position of the front focal position of the condenser lens 2 is also made substantially. Electron-optical characteristics of condenser lens 2 (DIS (θ))
To adjust.

Returning to FIG. 1, the elementary electron optical system array 3
A plurality of element electron optical systems each including a blanking electrode, an opening, and an electron lens are arranged in a direction orthogonal to the optical axis AX. Details of the element electron optical system array 3 will be described later.

The element electron optical system array 3 forms a plurality of intermediate images of the light source, and each intermediate image is reduced and projected by a reduction electron optical system 4 described later to form a light source image on the wafer 5.

At this time, each element of the element electron optical system array 3 is set so that the interval between the light source images on the wafer 5 becomes an integral multiple of the size of the light source image. Further, the elementary electron optical system array 3 makes the position of each intermediate image in the optical axis direction different according to the field curvature of the reduction electron optical system 4, and reduces each intermediate image to the wafer 5 by the reduction electron optical system 4. The aberration that occurs when the image is projected is corrected in advance.

The reduction electron optical system 4 includes a first projection lens 41 (4
3) and the second projection lens 42 (44). Let the focal length of the first projection lens 41 (43) be f
1. Assuming that the focal length of the second projection lens 42 (44) is f2, the distance between these two lenses is f1 + f2. AX on optical axis
Is located at the focal position of the first projection lens 41 (43), and its image point is focused on the second projection lens 42 (44). This image is -f
Reduced to 2 / f1. In addition, since the two lens magnetic fields are determined so as to act in opposite directions, theoretically, there are five spherical aberrations, isotropic astigmatism, isotropic coma, field curvature aberration, and axial chromatic aberration. Except for aberrations, other Seidel aberrations and chromatic aberrations related to rotation and magnification are canceled.

6 deflects a plurality of electron beams from the elementary electron optical system array 3 to form a plurality of light source images on the wafer 5.
This is a deflector that displaces in the X and Y directions by substantially the same amount of displacement. Although not shown, the deflector 6 is composed of a main deflector used when the deflection width is wide and a sub deflector used when the deflection width is narrow.The main deflector is an electromagnetic deflector. The sub deflector is an electrostatic deflector.

Numeral 7 denotes a dynamic focus coil for correcting a shift of the focus position of the light source image due to deflection aberration generated when the deflector 6 is operated, and numeral 8 is generated by deflection similarly to the dynamic focus coil 7. It is a dynamic stig coil that corrects astigmatism of deflection aberration.

Reference numeral 9 denotes a backscattered electron detector for detecting backscattered electrons or secondary electrons generated when the electron beam from the elementary electron optical system array 3 irradiates the alignment mark formed on the wafer 5.

Reference numeral 10 denotes a Faraday cup having two single knife edges extending in the X and Y directions, and detects a charge amount of a light source image formed by an electron beam from the elementary electron optical system.

Numeral 11 denotes a θ-Z stage on which a wafer is placed and which can be moved in the direction of the optical axis AX (Z axis) and in the direction of rotation around the Z axis. The above-mentioned Faraday cup 10 is fixed to the θ-Z stage. .

12 is a case where the θ-Z stage is mounted and the optical axis AX (Z
(XY axis) that is movable in the XY directions orthogonal to the axis.

Next, an element electron optical system array will be described with reference to FIG.
3 will be described.

The element electron optical system array 3 includes a plurality of element electron optical systems as a group (subarray), and a plurality of subarrays are formed. In this embodiment, seven sub-arrays A to G are formed. In each subarray, a plurality of element electron optical systems are two-dimensionally arranged. In each subarray of the present embodiment, 25 element electron optical systems such as D (1,1) to D (5,5) are formed, and each element electron optical system On the wafer, light source images arranged in the X direction and the Y direction at intervals of the pitch Pb (μm) are formed.

FIG. 4 is a sectional view of each element electron optical system.

In FIG. 3, reference numeral 301 denotes a blanking electrode which is constituted by a pair of electrodes and has a deflection function.
Is a substrate having an aperture (AP) for defining the shape of a transmitted electron beam, which is common to other element electron optical systems. A wiring (W) for turning on / of the electrode with the blanking electrode 301 is formed thereon. 303 is composed of three aperture electrodes,
This is an electron lens using two unipotential lenses 303a and 303b having a converging function in which the upper and lower electrodes are set to be the same as the acceleration potential V0 and the intermediate electrode is kept at another potential V1 or V2.

The shape of the upper, middle, and lower electrodes of the unipotential lens 303a and the shape of the upper and lower electrodes of the unipotential lens 303b are as shown in FIG. The electrode is
The astigmatism control circuit 1 sets a common potential in all the element electron optical systems.

The potential of the intermediate electrode of the unipotential lens 303a can be set for each element electron optical system by the focus / astigmatization control circuit 1, so that the focal length of the unipotential lens 303a can be set for each element electron optical system.

The intermediate electrode of the unipotential lens 303b is composed of four electrodes as shown in FIG.
Since the potential of each electrode can be set individually by the focus / astigmatism control circuit and can be set individually for each element electron optical system, the unipotential lens 303b can have a different focal length in a cross section orthogonal to the element electron optics. It can be set individually for each system.

As a result, by controlling the potential of the intermediate electrode of the element electron optical system, the electron optical characteristics (intermediate image formation position, astigmatism) of the element electron optical system can be controlled.

The electron beam made substantially parallel by the condenser lens 2 passes through the blanking electrode 301 and the opening (AP).
The electron lens 303 forms an intermediate image of the light source. At this time, the beam is not deflected like the electron beam bundle 305 unless an electric field is applied between the blanking electrodes 301. On the other hand, when an electric field is applied between the blanking electrodes 301, the beam is deflected like an electron beam bundle 306. Then, since the electron beam 305 and the electron beam 306 have different angular distributions on the object plane of the reduction electron optical system 4, the electron beam 305 at the pupil position of the reduction electron optical system 4 (on the P plane in FIG. 1). And electron beam bundle 306
Are incident on mutually different regions. Therefore, a blanking aperture BA that transmits only the electron beam bundle 305 is provided at the pupil position (on the P plane in FIG. 1) of the reduction electron optical system.

Further, each elementary electron optical system corrects the field curvature and astigmatism generated when the intermediate image formed by each is reduced and projected on the surface to be exposed by the reduction electron optical system 4. The potentials of the two intermediate electrodes of each elementary electron optical system are individually set to make the electron optical characteristics (intermediate image formation position, astigmatism) of each elementary electron optical system different. However, in this embodiment, the element electron optical systems in the same sub-array have the same electro-optical characteristics in order to reduce the wiring between the intermediate electrode and the focus / astigmatism control circuit 1, and the electro-optical characteristics of the element electron optical systems (Intermediate image formation position, astigmatism) is controlled for each sub-array.

Further, a plurality of intermediate images are formed by the reduction electron optical system 4.
In order to correct the distortion that occurs when the image is reduced and projected on the surface to be exposed, the distortion characteristics of the reduction electron optical system 4 are known in advance, and based on that, the direction orthogonal to the optical axis of the reduction electron optical system 4 The position of each element electron optical system is set.

Next, FIG. 6 shows a system configuration diagram of this embodiment.

The intensity distribution control system 13 includes a condenser lens
The excitation current of at least two of the electronic lenses 2a, 2b, and 2c constituting the electronic lens 2 is changed to adjust the electro-optical power (focal length), or at least two of the electronic lenses 2a, 2b, and 2c And a control circuit for adjusting the position of the illumination electron optical system in the optical axis direction by a drive system or both.

The blanking control circuit 14 turns on / of the blanking electrode of each element electron optical system of the element electron optical array 3.
control circuit for individually controlling f, focus / astigmatism control circuit 1 (1
5) is a control circuit for individually controlling the electron optical characteristics (intermediate image formation position, astigmatism) of each element electron optical system of the element electron optical array 3.

The focus / astigmatism control circuit 2 (16) is a control circuit for controlling the dynamic stig coil 8 and the dynamic focus coil 7 to control the focus position and astigmatism of the reduction electron optical system 4, and a deflection control circuit. A control circuit 17 controls the deflector 6, a magnification adjustment circuit 18 controls the magnification of the reduction electron optical system 4, and an optical characteristic circuit 19 controls the excitation current of the electromagnetic lens constituting the reduction electron optical system 4. It is a control circuit that adjusts the rotational aberration and the optical axis by changing it.

The stage drive control circuit 20 is a control circuit that controls the drive of the XY stage 12 in cooperation with the laser interferometer 21 that detects the position of the XY stage 12 by controlling the drive of the θ-Z stage.

The control system 22 includes a plurality of control circuits and a backscattered electron detector for performing exposure and alignment based on data from the memory 23 in which information on a drawing pattern is stored.
9. Synchronously control the Faraday cup 10. Control system 22
Are controlled by a CPU 25 that controls the entire electron beam exposure apparatus via an interface 24.

[Explanation of Operation] The operation of the electron beam exposure apparatus of this embodiment will be described with reference to FIG.

Prior to wafer exposure of the exposure apparatus, the CPU 25
Commands the “calibration” to the control system 22 via the interface 24, the control system 22 executes the following steps.

(Step 1) The control system 22 determines the position in the optical axis direction of the intermediate image formed by each element electron optical system of the element electron optical system array 3 via the focus / astigmatism control circuit 1 (15). The potential of the intermediate electrode of each elementary electron optical system is set so as to be set at a predetermined position.

The control system 22 selects one of the element electron optical systems, and controls the blanking control circuit 14 so that only the electron beam from the element electron optical system irradiates the wafer side. A blanking electrode other than the element electron optical system is operated (blanking on). At the same time, the XY stage 12 is driven by the stage drive control circuit 20,
The Faraday cup 10 is moved near the light source image formed by the electron beam from the selected element electron optical system, and the light source image formed by the electron beam from the selected element electron optical system is detected by the Faraday cup 10. Then, the applied current is detected.

(Step 2) The control system 22 sequentially measures the current radiated from the other element electron optical systems of the element electron optical system array 3 in the same manner as in Step 1, and calculates the irradiation current for each element electron optical system. Remember.

(Step 3) The control system 22 calculates the intensity distribution of the electron beam actually illuminating the element electron optical system array 3 based on the stored detection result of the current applied from each element electron optical system. Ask. Then, based on the obtained intensity distribution, the intensity distribution control system 13 is instructed so that the irradiation current of each element electron optical system becomes uniform, and the condenser lens
Adjusting the optical power of at least two of the electronic lenses 2a, 2b, 2c constituting the electronic lens 2;
The position of at least two electron lenses a, 2b, and 2c in the optical axis direction of the illumination electron optical system is adjusted, or both are adjusted.

In this embodiment, the irradiation currents from all the element electron optical systems were measured. However, in order to reduce the measurement time, the illumination area on the element electron optical array 3 was divided into a plurality of small areas. The elementary electron optical systems B (3,3) and C (3,3,3) of the elementary electron optical system array 3 shown in FIG.
3), E (3,3), F (3,3), Detecting only the electron beam from G (3,3) and calculating the intensity distribution of the electron beam illuminating the element electron optical system array No problem.

Next, the CPU 25 instructs the control system 22 to execute “exposure” via the interface 24, and
Performs the following steps:

(Step 11) The control system 22 commands the deflection control circuit 17 to deflect a plurality of electron beams from the elementary electron optical system array by the sub-deflector of the deflector 6, and also commands the blanking control circuit 14. The blanking electrode of each element electron optical system is turned on / off according to the pattern to be exposed on the wafer 5. At this time, the XY stage 12 is continuously moving in the X direction, and the deflection control circuit 17 controls the deflection position of the electron beam including the amount of movement of the XY stage 12.

As a result, the electron beam from one elementary electron optical system scans and exposes the exposure field (EF) on the wafer 5 starting from the black square as shown in FIG. Further, as shown in FIG. 8, the exposure fields (EF) of the plurality of element electron optical systems in the sub-array are set to be adjacent to each other, and as a result, the plurality of exposure areas (EF) on the wafer 5 Sub-array exposure field (SE
F) is exposed. At the same time, on the wafer 5, a subfield composed of a subarray exposure field (SEF) formed by each of the subarrays A to G as shown in FIG. 9 is exposed.

(Step 12) After exposing the subfield shown in FIG. 10, the control system 22 commands the deflection control circuit 17 to expose the subfield, and the elementary electron optical system is operated by the main deflector of the deflector 6. A plurality of electron beams from the array are deflected. Then, the operation of step 11 is performed to expose the subfield.

By repeating the above steps 11 and 12,
As shown in FIG. 10, the entire surface of the wafer is exposed by sequentially exposing subfields such as subfields.

(Embodiment 2) FIG. 11 is a view showing an electron beam exposure apparatus according to Embodiment 2 of the present invention. In FIG.
The same components as those described above are denoted by the same reference numerals, and description thereof will be omitted.

The electron beam exposure apparatus of this embodiment is a stencil mask type exposure apparatus.

That is, the electron beam from the electron gun 1 is
The condenser lens 2 whose front focal position is located at the light source position turns into a substantially parallel electron beam. The substantially parallel electron beam illuminates a stencil mask SM in which a pattern is formed between a part that transmits the electron beam and a part that does not transmit the electron beam, that is, the stencil mask SM having a pattern transmission hole. The condenser lens 2 is composed of electronic lenses 2a, 2b, 2c.
And adjusting the electro-optical power (focal length) of at least two of the electronic lenses 2a, 2b, 2c;
The intensity distribution of the electron beam illuminated on the stencil mask SM can be adjusted by adjusting the position of at least two of the electron lenses 2a, 2b, and 2c in the optical axis direction or by adjusting both. I have to. Then, the electron beam from the repetitive pattern transmission hole formed with the stencil mask SM is reduced and projected on the wafer 5 by the reduction electron optical system 4. Further, the image of the pattern transmission hole is repeatedly moved on the wafer by the deflector 6, and is sequentially exposed.

In this embodiment, a Faraday cup 10 for detecting an electron beam through a pinhole is used to obtain the intensity distribution of the electron beam illuminating the stencil mask SM. Specifically, before the stencil mask SM is mounted on the apparatus, the electron beam from the electron gun 1 is detected by the Faraday cup 10 while the XY stage 12 is driven by the stage drive control circuit 20, and the irradiation current is irradiated. Is detected. The irradiation current for each position of the Faraday cup 10 is stored. The control system 22 actually performs the stencil mask based on the stored detection result for each position of the Faraday cup 10.
Find the intensity distribution of the electron beam illuminating the SM. Then, based on the obtained intensity distribution, a stencil mask
Instruct the intensity distribution control circuit 13 to adjust the optical power of at least two electronic lenses of the electronic lenses 2a, 2b, 2c constituting the condenser lens 2 so that the irradiation current illuminated on the SM becomes uniform, The position of at least two of the electronic lenses 2a, 2b, 2c in the optical axis direction of the illumination electron optical system is adjusted, or both are adjusted.

Next, an embodiment of a device manufacturing method using the above-described electron beam exposure apparatus will be described.

FIG. 12 shows a micro device (a semiconductor chip such as an IC or an LSI, a liquid crystal panel, a CCD, a thin film magnetic head,
2 shows a flow of manufacturing a micromachine or the like. Step 1
In 01 (circuit design), the circuit of a semiconductor device is designed. In step 102 (exposure control data creation), exposure control data of the exposure apparatus is created based on the designed circuit pattern. On the other hand, in step 103 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 1
04 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the wafer and the exposure apparatus to which the prepared exposure control data has been input. The next step 105 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer prepared in step 4, and includes processes such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). including. In step 106 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 105 are performed. Through these steps, a semiconductor device is completed and shipped (step 107).

FIG. 13 shows a detailed flow of the wafer process. Step 111 (oxidation) oxidizes the wafer's surface. Step 112 (CVD) forms an insulating film on the wafer surface. In step 113 (electrode formation), electrodes are formed on the wafer by vapor deposition. Step 11
In step 4 (ion implantation), ions are implanted into the wafer. In step 115 (resist processing), a photosensitive agent is applied to the wafer. In step 116 (exposure), the circuit pattern is printed on the wafer by exposure using the above-described exposure apparatus. In step 117 (developing), the exposed wafer is developed.
In step 118 (etching), portions other than the developed resist image are removed. In step 119 (resist removal), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

By using the manufacturing method of this embodiment, it is possible to manufacture a highly integrated semiconductor device, which was conventionally difficult to manufacture, at low cost.

[0070]

As described above, according to the present invention, it is possible to provide an electron beam illuminating apparatus capable of uniformly illuminating a wide illuminating area and an electron beam exposing apparatus having the same.

[Brief description of the drawings]

FIG. 1 is a diagram schematically illustrating a main part of an electron beam exposure apparatus according to a first embodiment of the present invention.

FIG. 2 is a diagram illustrating an intensity distribution adjusting function of a condenser lens.

FIG. 3 is a diagram illustrating an element electron optical system array 3.

FIG. 4 is a diagram illustrating an element electron optical system.

FIG. 5 is a diagram illustrating electrodes of the elementary electron optical system.

FIG. 6 is a diagram illustrating a system configuration according to the present invention.

FIG. 7 is a view for explaining an exposure field (EF).

FIG. 8 is a view for explaining a sub-array exposure field (SEF).

FIG. 9 is a diagram illustrating a subfield.

FIG. 10 is a diagram illustrating wafer scanning exposure.

FIG. 11 is a diagram schematically illustrating a main part of an electron beam exposure apparatus according to a first embodiment of the present invention.

FIG. 12 is a diagram illustrating a flow of manufacturing a micro device.

FIG. 13 is a diagram illustrating a wafer process.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Electron gun 2 Condenser lens 3 Element electron optical system array 4 Reduction electron optical system 5 Wafer 6 Deflector 7 Dynamic focus coil 8 Dynamic stig coil 9 Reflection electron detector 10 Faraday cup 11 θ-Z stage 12 XY stage 13 Intensity distribution control System 14 Blanking control circuit 15 Focus / astigmatism control circuit 1 16 Focus / astigmatism control circuit 2 17 Deflection control circuit 18 Magnification adjustment circuit 19 Optical characteristic circuit 20 Stage drive control circuit 21 Laser interferometer 22 Control system 23 Memory 24 Interface 25 CPU

Claims (11)

[Claims] 1. An electron beam illuminating apparatus for illuminating an object using a light source that emits an electron beam, wherein the object irradiates the object with an electron beam from the light source.
An illumination electron optical system having a plurality of electron lenses; a unit for obtaining information on an intensity distribution of an electron beam applied to the object; and adjusting at least two of the plurality of electron lenses based on the information. An electron beam illuminating device comprising adjusting means. 2. The electron beam illuminating apparatus according to claim 1, wherein said adjusting means adjusts an electro-optical power of at least two of the plurality of electronic lenses. 3. The electron beam illumination according to claim 1, wherein said adjusting means adjusts a position of at least two of the plurality of electron lenses in an optical axis direction of the illumination electron optical system. apparatus. 4. A first light source which emits an electron beam.
An electron beam exposure apparatus for illuminating an object and projecting and exposing an electron beam from the first object to a second object via a reduction electron optical system, for irradiating the first object with an electron beam from the light source An illumination electron optical system having a plurality of electron lenses; a unit for obtaining information on an intensity distribution of an electron beam applied to the first object; and at least two electron lenses of the plurality of electron lenses based on the information. An electron beam exposure apparatus, comprising: an adjusting unit that adjusts the distance. 5. The electron beam exposure apparatus according to claim 4, wherein said adjusting means adjusts the electro-optical power of at least two of the plurality of electronic lenses. 6. An electron beam exposure apparatus according to claim 4, wherein said adjusting means adjusts positions of at least two of the plurality of electronic lenses in the optical axis direction of the illumination electron optical system. apparatus. 7. The electron beam exposure apparatus according to claim 4, wherein the first object is a mask in which a pattern is formed by a portion that transmits an electron beam and a portion that does not transmit the electron beam. 8. An electron beam exposure apparatus according to claim 4, wherein said first object has a plurality of openings, and has means for individually blocking electron beams passing through said plurality of openings. . 9. An electronic optical system corresponding to each aperture for forming an intermediate image of the light source from each of the electron beams passing through the plurality of apertures, wherein the plurality of intermediate images are formed by the reduced electron beam. 9. The electron beam exposure apparatus according to claim 8, wherein the projection is performed on the second object via an optical system. 10. Each of the plurality of electron optical systems includes:
The electron beam exposure apparatus according to claim 9, further comprising a unit configured to correct an aberration generated when the intermediate image is projected on the second object via a reduction electron optical system. 11. A device manufacturing method, wherein a device is manufactured using the electron beam exposure apparatus according to claim 4.