JPH10178003A - Plasma processing equipment - Google Patents

Abstract

(57) [Summary] [PROBLEMS] To clean a reaction chamber of a plasma processing apparatus. A movable member (60, 61) is provided on a substrate mounting table (101) in a reaction chamber (1a). Among the members 60 and 61, the member 60 is a shielding member, and the member 61 is a temporary substrate mounting table. At the time of the plasma processing, the substrate 9 carried in from the outside is temporarily placed on the member 61 and then placed on the substrate placing table 101. At the time of cleaning, the member 61 is positioned so as to cover the substrate mounting table 101, and cleaning is performed by etching.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus for performing a plasma process on a substrate such as a silicon wafer or quartz.

[0002]

2. Description of the Related Art In a plasma processing apparatus, a substrate is inserted into a substrate processing chamber in a reaction chamber, and a film is formed on the substrate by a plasma CVD method. The reaction chamber includes a plasma generation gas supply unit, a substrate mounting table on which the substrate is mounted, a high frequency electrode unit integrally formed below the substrate mounting table to apply a high frequency, and a plasma generation gas supply unit. And a plasma generation chamber provided between the substrate processing chamber. Plasma generation is performed by applying a high frequency that is mutually related to the plasma generation chamber and the high frequency electrode unit. Loading of the substrate before processing into the substrate processing chamber and unloading of the substrate after plasma film formation from the processing chamber are performed through a substrate insertion opening provided in a side wall of the reaction chamber. Needless to say, pipes for extracting gas, cooling pipes, and the like are provided in a part of the reaction chamber.

[0003]

In the above conventional example, an unnecessary film was sometimes formed on the inner wall of the reaction chamber. The presence of such a film may have an adverse effect on plasma generation, or impurities may be mixed into a film formed on a substrate.

An object of the present invention is to provide a plasma processing apparatus for effectively removing impurities formed on a reaction chamber wall or the like.

[0005]

According to the present invention, a high-frequency power is applied to a gas atmosphere formed in a processing vessel while supplying and exhausting a reaction gas in the processing vessel capable of reducing pressure to generate plasma. In a plasma processing apparatus which generates and performs plasma processing on each substrate held on at least two substrate mounting tables by the plasma, a substrate support for mounting a substrate on or removing the substrate from the respective substrate mounting table A plasma processing apparatus is provided, wherein a plate and a shielding plate capable of covering the respective substrate mounting tables are connected to a driving unit that moves up and down and rotates.

According to the plasma processing apparatus of the present invention, since the support plate receives the substrate, rotates, and moves up and down, the plurality of substrates can be mounted on the plurality of substrate mounting tables by a simple mechanism. It can be detached from the substrate mounting table. Furthermore, since a shielding plate is provided, the substrate is not mounted on the substrate mounting table, and when exposed to plasma, it is possible to cover each of the substrate mounting tables, and is shielded by the shielding plate. , Preventing the action of the plasma treatment. As a result, the life of the substrate mounting table becomes extremely long. In addition, since the support plate and the substrate mounting table are connected to the same driving unit, the device configuration can be simplified.
Preferably, the shield plate is a shield plate that further descends to cover the electrostatic attraction electrode. With this configuration, the substrate mounting table is further lowered from the rotational position of the shielding plate and approaches the substrate mounting table, so that the substrate mounting table can be more effectively prevented from performing the plasma processing.

More preferably, the shielding plate has a concave portion having a shape larger than that of the substrate mounting table on the substrate mounting table side. With this configuration, when the shielding plate is further lowered from the rotation position, the surface and the side surface of the substrate mounting table can be covered,
The substrate mounting table can be more effectively prevented from the action of the plasma processing. 7. The plasma processing apparatus according to claim 6, wherein the concave portion of the shielding plate has substantially the same shape as the shape of the substrate mounting table. With this configuration, when the shielding plate is further lowered from the rotational position, the surface and the side surface of the substrate mounting table can be covered, and further, the distance between the shielding plate and the side surface of the substrate mounting table can be covered while maintaining a certain interval. Therefore, plasma entering from the side of the substrate mounting table can be further suppressed, so that the substrate mounting table can be more effectively prevented from performing plasma processing.

[0010] Further, the shield plate has a retracting portion for retracting from the substrate mounting table when the driving means rotates. According to this configuration, since the shielding plate not only covers the substrate mounting table but also retracts, the plasma processing on the substrate when the substrate is mounted on the substrate mounting table and the mounting of the substrate on the substrate mounting table are performed. When not performed, the plasma processing in which the substrate mounting table is shielded from the plasma is performed only by a very simple operation of rotating the driving unit. Preferably, the substrate mounting table and the shunting unit are alternately arranged concentrically with the rotation center of the driving unit. With this configuration, the substrate can be placed on the substrate mounting table by the support plate and detached from the substrate mounting table, and the shielding plate can cover the substrate mounting table, and the substrate mounting table can be evenly arranged in the processing chamber. In the substrate plasma processing step, uniform plasma processing can be performed.

Further, the shield plate is a shield plate for covering the electrostatic attraction electrode by rotation of the rotating means when a reaction gas having an etching action flows in the processing chamber. When a reactive gas having an etching function is flowed into the processing chamber in this manner, the shielding plate prevents the surface of the substrate mounting table from being subjected to plasma etching, thereby preventing the etching of the substrate mounting table and preventing the substrate mounting table from being etched. The life of the mounting table becomes extremely long. Further, the plasma processing is a plasma processing using high-density plasma. As described above, if the plasma processing is a plasma processing using high-density plasma, the action of the plasma naturally increases.
In the case of high-density plasma of / cm3 or more, the life of the substrate mounting table is much longer than that of the conventional technology. Further, the substrate mounting table is an electrostatic chucking electrode. In this way, when the electrostatic chucking electrode is used for the substrate mounting table, the temperature uniformity of the substrate is improved, and the lifetime of the electrostatic chucking electrode, which is expensive to manufacture, becomes extremely long, and the maintenance cost of the plasma processing apparatus is greatly reduced. Can be reduced.

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described with reference to FIGS. FIG. 8 is a schematic diagram for explaining the outline of the present invention. FIG. 9 is a partial perspective view for explaining the present invention. The processing chamber 1 has a convex shape and includes a substrate processing chamber 1a and a plasma generation chamber 1b protruding upward therefrom. The plasma generation chamber 1b has a cylindrical shape, and a side surface is formed of a cylindrical insulating window 34, and a coil 43 is wound around the outer periphery of the insulating window 34. The upper surface of the plasma generation chamber is airtightly closed by a top plate 35 to which gas supply means 10 described later in detail is connected. An opening for mounting the substrate mounting table 101 and the high-frequency electrode 100 is provided on the bottom surface of the substrate processing chamber 1a, and the high-frequency application electrode 100 on which the substrate mounting table 101 is mounted is mounted on the opening by the mounting hardware 11. It is hermetically attached to the bottom of the processing chamber 1a. Further, a high-frequency application electrode 1 to which the substrate mounting table 101 is fixed is attached to the other opening in the
00 is hermetically attached to the bottom of the substrate processing chamber 1a.

The gas supply means 10 includes a shower plate 5 having a large number of holes 6 communicating with the plasma generation chamber 1b, and a gas dispersion chamber 7 surrounding the shower plate 5 outside the plasma generation chamber 1b.
Is formed from a gas supply frame 8. The substrate processing chamber 1a
An exhaust pipe 20 communicates with the side surface, and a gate valve not shown in the figure is provided on the side surface of the substrate processing chamber 1a, which is on the near side in the figure where a substrate is taken in and out. The coil 43
Is made of copper, is connected to a grounded high frequency application power supply 36, and cooling water flows inside the coil 43.
The substrate mounting table 101 is made of aluminum, and the high-frequency application electrode 100 is also made of aluminum.
20 are evenly arranged, and the cooling water flow pipes 12 communicate with each other. The cooling water flow pipe 12 is connected to a high frequency power supply grounded via a matching unit 13.

The substrate supporting plate 50 is connected to a drive unit 51 which moves up and down and rotates. The substrate supporting plate 50 supports the periphery of the substrate 9. The material of the substrate supporting plate 50 is alumina, quartz or the like. , A metal such as aluminum, or a metal such as aluminum coated with alumina or alumite, or a combination thereof. Further, when it is lowered by the driving unit 51, it is formed in a ring shape so as not to be in contact with the outer periphery of the substrate mounting table 101. Further, the front end of the substrate support plate 50 is notched, and the substrate transfer plate that holds and carries the substrate 9 of the substrate transfer device outside the processing chamber 1 (not shown) is cut out of the substrate support plate 50. The substrate 9 can be placed on the substrate support plate 50 or the substrate 9 can be taken out through the cut portion.

Next, the operation will be described. When a gate valve (not shown) of the substrate processing chamber 1a is opened, a substrate is inserted by a substrate transfer device (not shown). On the other hand, the substrate support plate 5
0 is positioned below the substrate 9 to be inserted, and when the substrate transfer device is lowered or the substrate support plate 50 is raised, the substrate support plate 50 is moved from the substrate transfer device to the substrate 9. 9 is received. Next, the substrate transport apparatus goes to receive the next substrate from outside the processing chamber 1. During this operation, the rotation of the driving unit 51 prepares another substrate support plate 50 to receive the substrate, and the other substrate support plate 50 similarly receives the substrate 9. Next, the gate valve is closed and the processing chamber 1 becomes airtight again. The support plate 50 is lowered by the lowering operation of the driving unit 51, and the substrate 9 is mounted on the substrate mounting table 101. The support plate and the other substrate support plate 50 are further separated from the substrate. Where I wait.

Next, from the shower plate 5 of the gas supply means 10, from the upper surface of the plasma generating chamber 1b, for example, a mixed gas of SiH4, O2, and Ar,
0 cc / min is supplied in a substantially evenly dispersed manner, maintained at a predetermined pressure of about 10 Pa, and a frequency of 13.56 MHZ and a high frequency power of 1
~ 2KW, frequency 400KH to high frequency applying electrode 100
When a high-frequency power of 0.5 to 1 kW is applied, high-density plasma having a plasma density of 109 / cm 3 or more is generated, and the film-forming element or molecule contained in the plasma that has become reactive is used for the substrate. The substrate 9 is moved to the substrate 9 mounted on the mounting table 101, an oxide film is formed on the substrate, and a process is performed for a required time. In the film forming step, when the high frequency is applied to the high frequency applying electrode 100, the temperature gradually rises and the substrate 9 reaches a desired temperature or higher due to heat conduction through the substrate mounting table 101. Cooling water is allowed to flow to cool the high-frequency application electrode 100 to a temperature of 300 to 400 ° C.
So that After the required time of the film forming process, the application of the high frequency to the coil 43 and the high frequency applying electrode 100 is stopped, the supply of the film forming reaction gas is stopped, and the inside of the processing chamber 1 is evacuated to a predetermined pressure or less.

Next, the substrate is taken out in the reverse order of the step of mounting the substrate 9 on the substrate mounting table 101. As the film forming process is repeated, a film is also formed on the inner wall of the processing chamber 1, and this film is gradually peeled off to become particles, and the substrate 9 is contaminated by the particles. Therefore, it is necessary to clean the room regularly or irregularly. At the time of cleaning, stop carrying in the substrate 9 and
A C2F6 gas or an NF3 gas is supplied into the processing chamber 1, and a film formed on the inner wall of the processing chamber 1 by the plasma etching process is removed by etching. The exhaust is performed from the pipe 12. Thus, cleaning is achieved. In addition, the plasma etching process also etches even the surface of the substrate mounting table 101 and causes foreign matter to adhere to the back surface of the substrate, or a coating material such as alumite is peeled off and affects the film forming characteristics. The frequency of replacing the substrate mounting table 101 is high, and the life of the substrate mounting table 101 may be shortened. In order to solve this problem, it is preferable to carry and cover the dummy substrate on the substrate mounting table 101 and perform the plasma etching process.

A first embodiment of the present invention will be described with reference to FIGS. FIG. 1 shows the plasma CVD of the present invention.
FIG. 2 is a schematic view for explaining an outline of the apparatus, and FIG. 2 is a perspective view showing an appearance of a plasma CVD apparatus of the present invention. still,
8 and 9 are denoted by the same reference numerals, and description thereof is omitted. The substrate support plate 61 includes a vertically moving and rotating drive unit 5.
The substrate support plate 61 supports the periphery of the substrate 9 and is made of a dielectric material such as alumina or quartz, a metal such as aluminum, or a metal such as aluminum. Of alumina coated or anodized aluminum. Further, when it is lowered by the driving unit 51, it is formed in a ring shape so as not to be in contact with the outer periphery of the substrate mounting table 101. The front end of the substrate support plate 61 is notched, and the substrate transfer plate for holding and carrying the substrate 9 of the substrate transfer device outside the processing chamber 1 (not shown) is cut out of the substrate support plate 61. The substrate 9 can be placed on the substrate support plate 61 or the substrate 9 can be taken out through the cut portion.

Further, the two substrate support plates 61 are provided point-symmetrically about the center of the rotation axis of the drive unit 51, and the shield plate 6 that covers the substrate mounting table at a position rotated by 90 ° with respect to the substrate support plate 61 is provided.
Two 0s are provided point-symmetrically about the rotation axis center. The space between the substrate mounting table 101 and another substrate mounting table 101 serves as a shelter 62 for the shielding plate. When the shielding plate 60 is lowered by the driving unit 51, the substrate mounting table 10 is
A concave portion 60a is provided so as to be out of contact with the outer periphery of 1. Further, the material of the shielding plate 60 is made of a dielectric material such as alumina or quartz, a metal such as aluminum, or a metal such as aluminum coated with alumina or alumite. It can also be formed by processing a single plate.

Next, the operation will be described. When a gate valve (not shown) of the substrate processing chamber 1a is opened, a substrate is inserted by a substrate transfer device (not shown). On the other hand, the substrate support plate 6
1 is positioned below the substrate 9 to be inserted, and when the substrate transfer device is lowered or the substrate support plate 61 is raised, the substrate support plate 61 is moved from the substrate transfer device to the substrate 9. 9 is received. Next, the substrate transport apparatus goes to receive the next substrate from outside the processing chamber 1. During the operation, the rotation of the drive unit 51 prepares another substrate support plate 61 to receive the substrate, and the other substrate support plate 61 similarly receives the substrate 9. Here, when the substrate 9 is mounted on the substrate mounting table 101, the shielding plate 60 serves as a retracting portion 62 between the substrate mounting table 101 and another substrate mounting table 101, and The shelter is retracted so as not to reach the upper part. Next, the gate valve is closed and the processing chamber 1 becomes airtight again.
Then, the supporting plate 61 is lowered by the lowering operation of the driving unit 51, and the substrate 9 is mounted on the substrate mounting table 101, and the supporting plate and the other substrate supporting plate 61 are further separated downward from the substrate. Where I wait.

Next, a film forming step is performed in the same manner as the processing described in FIGS. After the required time of the film forming process, the application of the high frequency to the coil 43 and the high frequency applying electrode 100 is stopped, the supply of the film forming reaction gas is stopped, and the inside of the processing chamber 1 is evacuated to a predetermined pressure or less. Next, the substrate is taken out in the reverse order of the step of mounting the substrate 9 on the substrate mounting table 101. Then, depending on the state of film formation on the inner wall of the processing chamber 1 in the film formation step, before the particles are scattered and contaminated on the substrate, the frequency of the film formation step is selected once or twice or more, The inside of the processing chamber 1 is cleaned by an etching process.

The cleaning of the inside of the processing chamber 1 by the plasma etching process will be described. First, when the gate valve is closed and it is confirmed that the inside of the processing chamber 1 is in a vacuum state, the shielding plate 60 located at the shunting section 62 rotates 90 ° to cover the substrate mounting table 101. Then, the shielding plate 60 is lowered by the driving unit 51 below the rotation position, and stops at a position where the shielding plate 60 does not contact the upper surface of the substrate mounting table 101, for example, 1 mm or more. The substrate mounting table 101 is covered by 60a. In the plasma etching process, the effect of shielding the substrate mounting table 101 from the etching action is enhanced. Further, only the rotating operation and the raising / lowering operation of the shielding plate need cover the substrate mounting table 101, which can be performed much faster than the conventional method of transporting and mounting the dummy substrate, thereby improving the operation efficiency of the apparatus. It can be significantly improved.

Next, for example, C2F6 or NF3 as an etching gas is flowed from the shower plate 5 of the gas supply means 10 from the upper surface of the plasma generating chamber 1b into the processing chamber 1 at a rate of about 100 cc / min to 1000 cc / min. The etching gas is supplied substantially uniformly dispersed and maintained at a predetermined pressure of about 0.5 to 100 Pa,
The frequency of 13.56 is applied to the coil 43 for the gas atmosphere.
MHZ, high frequency power 1-2 KW, high frequency application electrode 10
When a frequency of 400 KHZ and a high frequency power of 1 to 2 KW are respectively applied to the plasma processing chamber 0, high-density plasma having a plasma density of 109 / cm 3 or more is generated, and the film formed on the inner wall of the processing chamber 1 is etched, and the required time processing is performed. Is applied. In the plasma etching step, the substrate mounting table 101 is shielded by the shield plate 60 to prevent an etching action. Accordingly, the life of the substrate mounting table 101 is significantly extended. When the time required for the plasma etching process has passed, the coil 43
Then, the application of the high frequency to the high frequency electrode 100 is stopped, the supply of the etching gas is stopped, and the processing chamber 1 is evacuated to a predetermined pressure or less. Next, the shielding plate 60 is raised to 90 °.
It rotates and returns to the evacuation section.

Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 3 is a schematic diagram for explaining the outline of the second embodiment of the present invention. The same parts described in FIG. 1 are denoted by the same reference numerals, and description thereof is omitted. On the bottom surface of the substrate processing chamber 1a, there is an opening for mounting the electrostatic chucking electrode 4 and the high-frequency applying electrode 40. 40 is hermetically attached to the bottom of the processing chamber 1b. The electrostatic chucking electrode 4 was provided as the substrate mounting table described in the first embodiment, and the high frequency applying electrode 40 was provided as the high frequency applying electrode 100. The electrostatic attraction electrode 4 is an electrode member 41 made of ceramics such as alumina having a tungsten foil 42 disposed therein, the high-frequency application electrode 40 is made of aluminum, and a cooling water flow passage 120 is uniformly disposed inside. And an aluminum cooling water flow pipe 12 communicates therewith.
Further, a gas supply pipe 1 that penetrates through the electrostatic chucking electrode 4 and the high-frequency applying electrode 40 and supplies an inert gas such as He gas into a groove (not shown) formed on the surface of the electrostatic chucking electrode 4.
9 communicates via a valve 18. The grounded DC power supply 17 is connected to the tungsten foil 42 via the grounded filter 15. The cooling water flow pipe 12 is connected to a high frequency power supply 14 grounded via a matching unit 13.

Next, the operation of the second embodiment of the present invention will be described. The substrate 9 is placed on the electrostatic chucking electrode 40, and the support plate and the other substrate support plate 50 stand by further away from the substrate. Then, the tungsten foil 42 of the electrostatic chucking electrode 4 receives a DC current from a DC power supply, and generates a charge on the surface of the electrode member 41 of the electrostatic chucking electrode 4 to electrostatically hold the substrate 9. Cleaning in the processing chamber 1 in the film forming process and the plasma etching process is performed in the same manner as in the first embodiment of the present invention.

Next, a third embodiment of the present invention will be described with reference to FIG. FIG. 4 is an oblique external view of a plasma processing apparatus for explaining a third embodiment of the present invention. The processing chamber 1 includes a substrate processing chamber 1a and a plasma generation chamber 1b. The plasma generation chamber 1b protruding upward from the substrate processing chamber 1a is connected to the substrate processing chamber 1a through an opening 22 for a gate valve. It is provided so as to be directly above the substrate mounting table 101 or the electrostatic chucking electrode 4 arranged in series toward the back. The plasma generation chamber 1b has a rectangular parallelepiped shape, a plate-like insulating window 2 is provided on two opposing side surfaces, and a high-frequency application electrode 3 is disposed on the entire surface. Further, it is a matter of course that the insulating window 2 may be provided on four side surfaces of the plasma generation chamber 1b, and the high frequency applying electrode 3 may be provided.

Next, the operation of the third embodiment will be described. Since the insulating window 2 is a plate-shaped body, the strength can be maintained even when the inside of the processing chamber 1 is evacuated even if the plate is thinner than the cylindrical shape, so that the manufacturing cost can be reduced. Next, fourth and fifth embodiments of the present invention will be described with reference to FIGS. FIG. 5 and FIG. 6 are oblique external views of a plasma processing apparatus for describing fourth and fifth embodiments of the present invention. In the third embodiment of the present invention described above, the processing chamber 1 is composed of the substrate processing chamber 1a and the plasma generation chamber 1b, but in the present embodiment, the connection of the exhaust pipe of the substrate processing chamber 1a is performed. In order to increase the opening area, the chambers are replaced with the substrate processing chambers 1c and 1d. That is, the substrate processing chamber 1c is formed by projecting the substrate processing chamber 1c from an empty space on the side of the plasma generation chamber 1b, and has a large-diameter exhaust port on the side of the substrate processing chamber 1c. For example, a turbo molecular pump 33 or the like can be directly connected. Further, in the substrate processing chamber 1d, for example, a turbo molecular pump 33 or the like can be directly connected to an empty space beside the plasma generation chamber 1b and to the upper surface of the substrate processing chamber 1d. Thereby, the evacuation speed in the processing chamber 1 is dramatically improved, and the reached vacuum pressure can be reduced.

In the above-described first to fifth embodiments, the example in which the number of substrate mounting tables is two has been described. However, two or more substrates may be similarly used, and the number of substrates processed per unit time is increased. However, by extremely extending the life of the substrate mounting table, the maintenance cost of the plasma processing apparatus can be further reduced. Further, in the above-described first to fifth embodiments,
Although the apparatus for forming a film by the plasma CVD process has been described, the present invention also exerts a remarkable effect similarly to the cleaning of a device that stains the inner wall of the processing chamber 1 by the plasma etching process or the sputtering process.

[0027]

Embodiment An embodiment in which the present invention is applied to an actual product will be described with reference to FIG. The cassette chamber 70 includes a load cassette chamber 70a and an unload cassette chamber 70b. The load cassette chamber 70a and the unload cassette chamber 70b have an opening through which a cassette is inserted into and out of the plasma processing apparatus 200. Portions are provided with gate valves 21d and 21e. The load cassette chamber 70a and the unload cassette chamber 70b are provided on one side of the transfer chamber 71, respectively, with gate valves 21b,
21c. The processing chamber 1 is disposed on the other side of the transfer chamber 71 via a gate valve 21a. The transfer chamber 71 is provided with a substrate transfer device 72 for transferring the substrate 9 from the load cassette chamber 70a to the processing chamber 1 and transferring the substrate 9 from the processing chamber 1 to the unload cassette chamber 70b. ing. As described in the first and second embodiments of the present invention, the substrate mounting table 101 or the electrostatic chucking electrode 4, the shielding plate 60, and the support plate 61 are provided in the processing chamber.

Next, the operation of this embodiment will be described. The gate valve 21d of the load cassette chamber 70a is opened, and the cassette loaded with the substrate is loaded into the load cassette 70a.
a. Then, when the gate valve 21d is closed and the load cassette chamber 70a is evacuated to a predetermined pressure or lower, it is confirmed that the transfer chamber 71 is at a predetermined pressure or lower. The gate valve 21b provided between them is opened. Then, one substrate 9 is removed from the cassette by the substrate transport device 72.
Is moved into the transfer chamber 71 while receiving and holding the gate valve 21b, and the gate valve 21b is closed. Further, it is confirmed that the pressure in the processing chamber 1 is equal to or lower than a predetermined pressure.
1 and a gate valve 21a provided between the processing chamber 1
Opens, and the substrate transfer device 7 holding the substrate 9
2, the substrate 9 is transferred to the support plate 61. Then, the gate valve 21a closes. Then, 21b is opened again, and the substrate transfer device 72 goes to receive the substrate 9,
As described above, the substrate 9 is delivered to another support plate 61 that has not yet received the substrate 9. Then, the support plate 61
As a result, the substrate 9 is placed on the substrate mounting table 101 or the electrostatic chucking electrode 4 which is a substrate mounting table. Then, a desired plasma treatment is performed.

When the plasma processing step is completed, the substrate 9 is transferred to the substrate receiving cassette prepared in the unload cassette chamber 70b in the reverse procedure of transferring the substrate 9 to the processing chamber 1. . The gate valve 21
The shutters d and 21e or the gate valves 21b and 21c can be formed by a shutter having no airtightness.

[0030]

According to the present invention, it is possible to obtain a plasma processing apparatus capable of protecting the substrate mounting table and the electrostatic chucking electrode serving as the substrate mounting table, extending the life of the apparatus, and improving the operation efficiency of the apparatus.

[Brief description of the drawings]

FIG. 1 is a schematic diagram for explaining an outline of a plasma processing apparatus according to a first embodiment of the present invention.

FIG. 2 is a partial perspective view of the plasma processing apparatus according to the first embodiment of the present invention.

FIG. 3 is a schematic diagram for explaining an outline of a plasma processing apparatus according to a second embodiment of the present invention.

FIG. 4 is an oblique external view of a plasma processing apparatus according to a third embodiment of the present invention.

FIG. 5 is an oblique external view of a plasma processing apparatus according to a fourth embodiment of the present invention.

FIG. 6 is an oblique external view of a plasma processing apparatus according to a fifth embodiment of the present invention.

FIG. 7 is a diagram 1 showing an embodiment of the present invention applied to an actual product.
It is the schematic which looked at the plasma processing apparatus of the Example from the upper direction.

FIG. 8 is a schematic diagram for explaining an outline of a conventional technique.

FIG. 9 is a partial perspective view for explaining a conventional device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Processing room 1a, 1c, 1d Substrate processing room 1b Plasma generation room 2 Insulating window 3, 40, 100 High frequency application electrode 4 Electrostatic adsorption electrode 5 Shower plate 6 Hole 7 Gas dispersion room 8 Gas supply frame 9 Substrate 10 Gas supply means DESCRIPTION OF SYMBOLS 11 Mounting bracket 12 Cooling water flow path 13 Matching device 14, 36 High frequency power supply 15 Filter 16 Capacitor 17 DC power supply 18 Valve 19 Gas supply pipe 20 Exhaust pipe 21, 21a, 21b, 21c, 21d, 21e Gate valve 22 Opening 33 Turbomori Circular pump 34 Insulating window 35 Top plate 41 Electrode member 42 Tungsten foil 43 Coil 50, 61 Substrate support plate 51 Drive unit 60 Shielding plate 61 Support plate 60a Recess 62 Retraction unit 70 Cassette room 70a Load cassette room 70b Unload cassette room 101 Substrate Mounting table 120 Cooling water Passage 200 plasma processing apparatus

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification symbol FI H01L 21/304 341 H01L 21/302 N (72) Inventor Shinji Yashima 3-14-20 Higashinakano, Nakano-ku, Tokyo Kokusai Electric Co., Ltd. (72) Inventor Takeo Sato 3--14-20 Higashinakano, Nakano-ku, Tokyo International Electric Co., Ltd. (72) Inventor Keiko Nabeshima 3-14-20 Higashinakano, Nakano-ku, Tokyo International Electric Co., Ltd. (72) Inventor Takashi Yokawa 3--14-20 Higashinakano, Nakano-ku, Tokyo Inside Kokusai Electric Corporation

Claims (9)

[Claims] 1. A plasma is generated by applying high-frequency power to a gas atmosphere formed in a processing vessel while supplying and exhausting a reaction gas in a processing vessel capable of reducing pressure, and generating at least two substrates by the plasma. In a plasma processing apparatus that performs plasma processing on each substrate held on a mounting table, a substrate supporting plate that mounts a substrate on or separates from the substrate mounting table, and the respective substrate mounting table A plasma processing apparatus, wherein a shielding plate that can be covered is connected to a driving unit that moves up and down and rotates. 2. The plasma processing apparatus according to claim 1, wherein the shield plate is a shield plate that further descends to cover the electrostatic attraction electrode. 3. The plasma processing apparatus according to claim 2, wherein the shielding plate has a concave portion having a shape larger than the substrate mounting table on the substrate mounting table side. 4. The plasma processing apparatus according to claim 3, wherein the concave portion of the shielding plate has substantially the same shape as the shape of the substrate mounting table. 5. When the driving means rotates,
5. The plasma processing apparatus according to claim 1, wherein said shielding plate has a retreat portion for retreating from above the substrate mounting table. 6. The plasma processing apparatus according to claim 5, wherein said substrate mounting table and said shunting unit are alternately arranged concentrically with a rotation center of said driving means. 7. The shielding plate is a shielding plate that covers the electrostatic attraction electrode by rotation of the rotating means when a reaction gas having an etching action flows in the processing chamber. Item 8. The plasma processing apparatus according to any one of Items 1 to 7. 8. The plasma processing apparatus according to claim 1, wherein the plasma processing is high-density plasma processing. 9. The plasma processing apparatus according to claim 1, wherein said substrate mounting table is an electrostatic chucking electrode.