JPH10163166A - Method and apparatus for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method and an apparatus, for manufacturing a semiconductor device, in which toughening of a semiconductor layer can be controlled simply and surely. SOLUTION: By a treatment in which a drop of water containing hydrofluoric acid and a photoresist are used, hollows are formed partly on the surface of an oxide film 201 on a silicon substrate 200. A lower-layer polysilicon electrode 203a and a dielectric film 204a are deposited in parts in which the hollows are formed out of the surface of the oxide film 201, the oxide film 201 comprises uneven parts on its surface according to the hollows and has a rough surface. On the other hand, a lower-layer polysilicon electrode 203b and a dielectric film 204b which are deposited and formed in a smooth part in which the hollows are not formed out of the surface of the oxide film 201 comprise a shape whose cross section is flat without having any uneven part. A roughened-face capacitor is constituted of the lower-layer polysilicon electrode 203a, of the dielectric film 204a and of an upper-layer polysilicon electrode 205a. The capacitance of the roughened-face capacitor is large with reference to an occupation area.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method and an apparatus for manufacturing a semiconductor device for roughening a semiconductor layer.

[0002]

2. Description of the Related Art One method of obtaining a capacitor having a large capacity without increasing the area occupied by an electrode is to roughen the surface of the electrode. 27 to 29
3A to 3C are cross-sectional views illustrating a method for roughening an electrode according to a conventional technique in the order of steps. In this method, a nucleus is formed on the surface of amorphous silicon, and grain growth is performed based on the nucleus to obtain polysilicon having a roughened surface. The processing method is described below.

Conventional processing steps First, as shown in FIG. 27, a silicon substrate 1000, a silicon oxide film 10
01 and a silicon film 1002 are prepared. The surface of the silicon substrate 1000 is covered with a silicon oxide film 1001 having holes, and a portion exposed by the holes is in contact with a silicon film 1002 made of amorphous silicon.

Conventional processing step The wafer is treated with hydrofluoric acid in order to remove the oxide film naturally grown on the surface of the wafer.

Conventional processing step3. Bring the wafer into the reaction chamber. In this reaction chamber, for example, 10 ^-5 Torr
A state of ultra-high vacuum and a temperature of about 600 ° C. is maintained. In the reaction chamber, disilane (Si ₂ H ₆ ) gas is supplied to the wafer.

A silicon nucleus is formed on the surface of the silicon film 1002 by colliding with silicon atoms in the silicon film 1002 while diffusing silicon atoms provided by the disilane gas in the surface portion of the silicon film 1002 with high mobility. .

[0007] Amorphous silicon forming the silicon film 1002 is deposited on the silicon substrate 1 from the surface where crystal nuclei exist.
Solid phase growth in the direction toward 000. At this time, silicon atoms having high mobility on the surface of the silicon film 1002 wrap around from the silicon film 1002 to the upper part of the crystal nucleus, and the crystal nucleus grows into crystal grains.

[0008] By the crystal grains formed as described above, as shown in FIG. 28, a silicon film 10 in which amorphous silicon is solid-phase grown to polysilicon is formed.
02 is roughened.

Conventional processing step 4. A dielectric film and a silicon film are sequentially formed on the roughened silicon film 1002.
FIG. 29 is a cross-sectional view showing a wafer including a capacitor having a dielectric film 1003 and a silicon film 1004 and using the formed silicon film 1002 and the silicon film 1004 as electrodes.

[0010]

If the oxide film naturally grows again after the treatment using hydrofluoric acid in the conventional processing step 2, the movement of silicon atoms on the surface of the silicon film 1002 in the conventional processing step 3 is hindered. Therefore, there is a restriction that the wafer must be brought into the reaction chamber in the conventional processing step 3 immediately after the conventional processing step 2. Furthermore, since the growth of crystal grains is affected by the state of the surface of the silicon film 1002, there is a problem that it is difficult to control the surface roughening.

In the conventional processing step 3 shown in FIG. 28, deposition of polysilicon by disilane gas may be recognized even on a portion of the surface of the silicon oxide film 2 which is not covered by the silicon film 1002. In this case, as shown in FIG. 30, in the wafer that has been subjected to the conventional processing step 4, silicon particles 1 are contained in the dielectric film 1003 or the silicon film 1004.
005 will be present.

The silicon film 1002 and the silicon film 1 are formed by the silicon particles 1005 existing in the dielectric film 1003.
There is a problem that insulation with the 004 is deteriorated or destroyed.

In the conventional processing step 4, the dielectric film 1003
Instead, the surface of the silicon film 1002 can be oxidized to obtain the silicon oxide film 1006 (FIG. 31). In this case, silicon particles 1005 shown in FIG. 30 are oxidized simultaneously with the surface of silicon film 1002 to become silicon oxide particles 1007. Silicon oxide particles 1
007 causes a problem that the surface of the silicon oxide film 1001 is roughened.

SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to provide a method and an apparatus for manufacturing a semiconductor device capable of easily and reliably controlling the roughening of a semiconductor layer.

[0015]

According to the present invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of: (a) partially removing a semiconductor oxide film by etching droplets on a surface; Forming a semiconductor layer having a roughened surface in contact with the film by utilizing the film.

According to a second aspect of the present invention, there is provided a method of manufacturing a semiconductor device according to the first aspect.
The etching droplet is performed before the step (a), (c) a step of forming a droplet on the surface of the semiconductor oxide film, and (d) dissolving an etching gas in the droplet. Process.

According to a third aspect of the present invention, there is provided a method of manufacturing a semiconductor device according to the first aspect.
The etching droplet comprises alcohol.

A method of manufacturing a semiconductor device according to a fourth aspect is the method of manufacturing a semiconductor device according to the second aspect,
The step (a) is a step of forming a depression in the semiconductor oxide film, and the step (b) is a step of depositing the semiconductor layer on the semiconductor oxide film.

According to a fifth aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of:
The semiconductor oxide film is formed on the surface of the semiconductor layer, the step (a) is a step of forming a through hole in the semiconductor oxide film, and the step (b) is a step of forming the semiconductor oxide film. This is a step of partially removing the semiconductor layer using the film as a mask.

A method for manufacturing a semiconductor device according to claim 6 is the method for manufacturing a semiconductor device according to claim 4 or 5, wherein the method is performed before the step (c).
The method further includes a step of partially covering the semiconductor oxide film with a resist film.

According to a seventh aspect of the present invention, in the method of manufacturing a semiconductor device according to the first, fourth, or fifth aspect, the semiconductor oxide film and the etching gas are It comprises silicon oxide and hydrogen fluoride.

[0022] In the semiconductor device manufacturing apparatus according to the present invention, an introduction pipe for conducting an etching gas and a vapor is provided;
An outlet tube and an isolation container having a mounting table on which a semiconductor oxide film is mounted and whose temperature can be controlled, and which connects the inlet tube and the outlet tube.

[0023]

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment 1 FIG. First, in this embodiment, a method for partially removing a semiconductor oxide film, which is necessary for manufacturing a semiconductor device having a roughened semiconductor layer, will be described. A method for obtaining a semiconductor layer whose surface is roughened using a partially removed semiconductor oxide film will be described in Embodiment 3 and thereafter. The same configurations and structures as those of the prior art are denoted by the same reference numerals.

FIG. 1 is a sectional view illustrating the structure of a manufacturing apparatus according to the present embodiment. Gas is introduced from the gas introduction pipe 1 into the chamber 7 that can be sealed. The gas in the chamber 7 is exhausted from the exhaust pipe 3 by the vacuum pump 4.

A susceptor 8 is provided in the chamber 7. The susceptor 8 is provided with a coil-shaped heater 9 and a cooling pipe 2 through which cooling water is conducted, so that the temperature of the susceptor 8 can be controlled as desired by the heater 9 and the cooling water.

The gas introduction pipe 1 is connected to a shower head 5 in a chamber 7. The gas introduced from the gas introduction pipe 1 into the chamber 7 is uniformly sprayed onto the wafer 6 mounted on the susceptor 8 and having an oxide film on the surface.

A method of partially removing an oxide film using the manufacturing apparatus shown in FIG. 1 will be described with reference to FIGS. Of course, the method for partially removing an oxide film according to the present invention is not realized only by using the manufacturing apparatus shown in FIG. 2 to 5 are cross-sectional views illustrating a method of partially removing the oxide film in the order of steps.

First, as shown in FIG. 2, a wafer 6 having a silicon substrate 100 and an oxide film 101 which is a silicon oxide film formed on the surface of the silicon substrate 100 is placed on the susceptor 8. Circuits may be integrated on the surface of the silicon substrate 100.

Next, as shown in FIG.
1, a water droplet 102 is formed. HF having an action of etching the oxide film 101 when dissolved is added to the water droplet 102.
(Hydrogen fluoride) is dissolved. The water droplets 102 are formed by condensation of HF-dissolved water vapor, which has been sent from the gas introduction pipe 1 into the chamber 7, on the surface of the oxide film 101.

When the temperature of the surface of oxide film 101 is lower than the boiling point of water vapor, the water vapor condenses to form water droplets 102. When the water droplets 102 have a desired size and number, supply of steam is stopped. As shown in FIG. 4, the water droplet 102 containing HF etches the oxide film 101 to form a hole 101h. When the amount of oxide film 101 removed by etching becomes desired, chamber 7
, And the water droplets 102 are removed by washing with water.

Through the above steps, an oxide film 101 whose surface is roughened by the holes 101h shown in FIG. 5 is obtained. Since the temperature of the oxide film 102 can be set as desired by the susceptor 8, the state of dew condensation can be obtained as desired, and the size and the number of holes 101h per unit area can be controlled as desired. . The configuration will be described in detail below, but the number per unit area is referred to as “density” below for simplicity.

When the temperature of the oxide film 102 is relatively low, the dew condensation of water vapor proceeds rapidly. At this time, water drops 10
The size of 2 is large and the density is small. Therefore, the holes 101h formed by etching have a large size and a small number. On the other hand, when the temperature of the oxide film 101 is relatively high, dew condensation of water vapor proceeds slowly, and the size of the water droplet 102 is relatively small and the density is relatively large. Thereby, the size of the hole 101h is small, and the number is large.

In summary, by controlling the temperature and density of the gas containing water vapor supplied from the gas introduction pipe 1 and the temperature of the susceptor 8 including the cooling pipe 2 and the heater 9, the rough surface of the oxide film 101 is controlled. The degree of transformation is controlled.
Therefore, the oxide film 101 can be roughened as desired, and a capacitor having a desired capacitance can be obtained as described in the third and subsequent embodiments.

HF is added to the steam supplied from the gas introduction pipe 1.
Has been described, but HCL or H
In principle, it is also possible to use hydrogen halide such as Br. However, HF has a large etching action when dissolved in water, and is the most common and easily available for etching silicon oxide.
Therefore, the use of HF makes it possible to quickly remove the oxide film, thereby increasing the efficiency.

Embodiment 2 In the present embodiment,
A method by which partial removal of a semiconductor oxide film in Embodiment 1 can be performed with higher accuracy will be described. Hereinafter, the same configurations and structures as those already described have the same reference characters allotted, and description thereof will not be repeated.

FIGS. 6 and 7 are sectional views illustrating a method of partially removing an oxide film according to the present embodiment in the order of steps. The configuration shown in FIG. 6 is obtained by replacing the water droplet 102 having the configuration shown in FIG. 3 with a water droplet 102a. Other configurations are common in FIGS. 3 and 6. The water droplet 102 having the structure shown in FIG. 3 contains HF, but the water droplet 102a shown in FIG. 6 does not contain HF, which is a difference between the structures shown in FIGS.

By not including HF in the steam supplied from the gas introduction pipe 1 shown in FIG.
Is obtained. Since HF is not included, the water droplet 102a
In this state, the oxide film 101 is not etched.

When the water vapor has condensed on the oxide film 101 at a desired size and density, the supply of the water vapor is stopped, and the HF gas is supplied from the gas inlet pipe 1 instead. The HF gas dissolves into the water droplet 102a as shown in FIG. As a result, the water droplet 102a has an etching action, and the oxide film 101 is partially removed as shown in FIG.

In the method for partially removing an oxide film according to the present embodiment, it is possible to impart an etching force to water droplet 102a after water droplet 102a is formed under desired conditions. Therefore, the size and density of the hole 101h can be controlled with higher accuracy than in the first embodiment by grasping the amount and speed of dissolution of the HF gas in the water droplet 102a.

Embodiment 3 8 to 11 are cross-sectional views illustrating a method for manufacturing the first capacitor according to the present embodiment in the order of steps. The silicon substrate 200 and the oxide film 201 of the wafer shown in FIG. 8 have the same configurations as the silicon substrate 100 and the oxide film 101 of the first embodiment shown in FIG. The surface of the oxide film 201 is covered with a photoresist 202 according to a well-known photoengraving technique except for a part to be roughened.

Next, as shown in FIG. 9, the oxide film 20 is formed by the method described in the first or second embodiment.
A hole 201h is formed in a portion of the surface of the substrate 1 not covered by the photoresist 202.

Subsequently, after removing the photoresist 202, a polysilicon film is deposited on the entire surface of the wafer shown in FIG. 9, and the polysilicon is patterned. FIG.
Reference numeral 0 is a cross-sectional view illustrating the structure of a wafer having lower polysilicon electrodes 203a and 203b formed by patterning. The lower polysilicon electrode 203a,
203b is formed on a part of the surface of the oxide film 201 which has been roughened and a part which has not been roughened.

The shape of the lower polysilicon electrode 203a formed by deposition is undulating due to the presence of the hole 201h, and its surface has irregularities. That is, the lower polysilicon electrode 203a is roughened. On the other hand, lower polysilicon electrode 203b is not roughened because it is deposited and formed on a smooth part of the surface of oxide film 201.

Subsequently, as shown in FIG.
Dielectric films 204a and 204 made of N (silicon nitride) or the like
b and upper polysilicon electrodes 205a and 205b are formed on the lower polysilicon electrodes 203a and 203b, respectively. These are formed by film formation and patterning.

Since the lower polysilicon electrode 203a is roughened, its shape is reflected on the shape of the dielectric film 204a, and the portion of the surface of the upper polysilicon electrode 205a that contacts the dielectric film 204a is also rough. Has been On the other hand, since the lower polysilicon electrode 203b has a smooth shape, a portion of the surface of the upper polysilicon electrode 205b that contacts the dielectric film 204b is also smooth.

As is apparent from the above configuration, the oxide film 2
In the portion of the electrode 01 that is not covered with the photoresist 202 shown in FIG. 9, a capacitor whose electrode surface is roughened (hereinafter referred to as a roughened capacitor) is formed. On the other hand, the photoresist 202
The portion covered by the above becomes a capacitor (smoothing capacitor) having a smooth electrode surface. The extraction electrode of the capacitor exists along a direction perpendicular to the drawing and is not shown.

In the method of manufacturing a capacitor according to the present embodiment, it is possible to form a rough surface capacitor and a smoothing capacitor on the same wafer. Therefore, even when the allocation of the area on the wafer is determined for each capacitor, a plurality of capacitors having various capacitances can be manufactured without changing the conditions such as the thickness of the dielectric film.

Specifically, by determining whether or not the surface of the electrode of the capacitor is to be roughened, and by determining the degree of the surface roughening when the surface is roughened, The capacitance of a capacitor occupying a certain area can be changed as desired.

Embodiment 4 In the first manufacturing method described in the third embodiment, the oxide film is roughened, and the lower electrode, the dielectric film, and the upper electrode are sequentially roughened using this shape. In the present embodiment, the partially removed oxide film is used as a mask to roughen the polysilicon which is a lower electrode existing immediately below the oxide film,
A second manufacturing method for roughening the dielectric film and the upper electrode will be described.

FIG. 12 to FIG.
It is sectional drawing which illustrates the manufacturing method of a capacitor in order of a process. The wafer shown in FIG.
It has a structure in which an interlayer insulating film 301, a polysilicon film 302, and an oxide film 303 are sequentially stacked thereon.

Next, patterning is performed on the wafer shown in FIG. FIG. 13 is a cross-sectional view illustrating the structure of a wafer including lower polysilicon electrodes 302a and 302b and oxide films 303a and 303b. Lower polysilicon electrodes 302a, 302b and oxide films 303a,
303b is formed by patterning the polysilicon film 302 and the oxide film 303.

In the following, the lower polysilicon electrode 3
In the following description, 02a is an electrode to be roughened, and lower polysilicon electrode 302b is an electrode that is not roughened.

Following the process shown in FIG. 12, FIG.
A photoresist is formed on the wafer shown in FIG. FIG. 14 is a cross-sectional view illustrating the structure of the wafer on which the photoresist 304 has been formed. The oxide film 303b on the lower polysilicon electrode 302b that is not roughened is completely covered with the photoresist 304, but the oxide film 303a on the lower polysilicon electrode 302a to be roughened is partially formed by the photoresist 304. Exposure is allowed.

Subsequently, a portion of the oxide film 303a that is allowed to be exposed by the photoresist 304 is partially removed by the method described in the first or second embodiment. FIG. 15 shows a lower polysilicon electrode 302a.
FIG. 11 is a cross-sectional view illustrating a structure of a wafer in which an exposed hole 303h that partially exposes the surface of the wafer is formed.

Subsequently, using the oxide film 303a having the exposed holes 303h as a mask, the polysilicon is selectively etched using hydrofluoric acid or the like. Then, as shown in FIG. 16, a portion of lower polysilicon electrode 302a exposed by exposure hole 303h is removed. Of course,
Oxide film 3 covered with photoresist 304
The lower polysilicon electrode 302b below 03b is not removed.

Subsequently, the photoresist 304 and the oxide films 303a and 303b are removed. FIG. 17 shows a lower polysilicon electrode 302 whose surface is exposed.
FIG. 3 is a cross-sectional view illustrating a structure of a wafer including a and b. The surface of lower polysilicon electrode 302a is roughened, and the surface of lower polysilicon electrode 302b is smooth.

The structure illustrated in FIG. 18 is obtained through the film formation and patterning of the dielectric and polysilicon. A dielectric film 305a and an upper polysilicon electrode 306a are laminated on the lower polysilicon electrode 302a, and a dielectric film 305b and an upper polysilicon electrode 306b are laminated on the lower polysilicon electrode 302b, respectively.

The shapes of the dielectric film 305a and the upper polysilicon electrode 306a are determined by the roughened lower polysilicon film 302a. Therefore, the lower-layer polysilicon electrode 302a, the dielectric film 305a, and the upper-layer polysilicon electrode 306a constitute a rough-surface capacitor. On the other hand, the lower polysilicon electrode 302b, the dielectric film 305b, and the upper polysilicon electrode 306b form a smoothing capacitor.

In the second manufacturing method described in the present embodiment, as in the first manufacturing method described in the third embodiment, a rough surface capacitor and a smoothing capacitor can be simultaneously formed. It is. The second manufacturing method described in the present embodiment is different from the first manufacturing method described in the third embodiment in that the lower polysilicon electrode 30
The process of FIG. 16 for performing the partial etching of 2a requires time and effort. However, as described in the fifth embodiment, the second manufacturing method described in the present embodiment can suitably cope with a case where the electrodes are three-dimensional.

Embodiment 5 FIG. In the present embodiment,
The use of the second manufacturing method described in the fourth embodiment for three-dimensional electrode surface roughening will be described. 19 to 2
FIG. 3 is a cross-sectional view showing an example in which the second manufacturing method described in the fourth embodiment is used for manufacturing a cylindrical rough surface capacitor in the order of steps.

First, as shown in FIG. 19, a cylindrical lower polysilicon electrode 40 called a storage node is provided.
1 is formed on the interlayer insulating film 400. The lower polysilicon electrode 401 has a U-shape in which a cross section lies on the interlayer insulating film 400.

Next, similarly to the step shown in FIG. 12, the surface of lower polysilicon electrode 401 is thinly oxidized. FIG.
0 is a cross-sectional view illustrating the structure of the lower polysilicon electrode 401 whose surface has been oxidized.

Subsequently, as shown in FIG. 21, a water droplet 10 is placed on the oxidized surface of lower polysilicon electrode 401.
2a is formed. After dissolving HF in the water droplet 102a to partially remove the oxide film, the polysilicon of the lower polysilicon electrode 401 is partially removed as in the step shown in FIG. By using a material resistant to hydrofluoric acid as the interlayer insulating film 400, the interlayer insulating film 400
Is prevented from being roughened. When the interlayer insulating film 400 is made of silicon oxide,
In the step shown in FIG. 21, the surface of the interlayer insulating film may be covered with a photoresist.

When the oxide film on the surface of lower polysilicon electrode 401 is removed, lower polysilicon electrode 401 whose surface is roughened as shown in FIG. 22 is obtained. Thereafter, a dielectric film 402 and an upper polysilicon electrode 403 are sequentially formed on the lower polysilicon electrode 401. FIG. 23 is a cross-sectional view illustrating the structure of a rough surface capacitor constituted by a lower polysilicon electrode 401, a dielectric film 402, and an upper polysilicon electrode 403.

Next, the case of a thick film stack type rough surface capacitor will be described. 24 to 26 are cross-sectional views illustrating an example of manufacturing a thick-film stack type rough surface capacitor by the second manufacturing method described in the fourth embodiment in the order of steps. The manufacturing methods illustrated in FIGS. 24 to 26 and FIGS. 19 to 23 are substantially the same.

First, as shown in FIG. 24, an interlayer insulating film 500 having a thick lower polysilicon electrode 501 called a core electrode is prepared. Next, as in the steps shown in FIGS. 20 and 21, the lower polysilicon electrode is partially removed. FIG. 25 is a cross-sectional view illustrating the structure of the roughened lower polysilicon electrode. Dielectric film 50
By sequentially forming the second and upper polysilicon electrodes 503, the thick-film stacked type rough surface capacitor shown in FIG. 26 is obtained.

Consider a case where three-dimensional electrode surface roughening is performed using the first manufacturing method described in the third embodiment. In this method, the lower polysilicon electrode, the dielectric film, and the upper polysilicon electrode deposited on the oxide film are curved by utilizing the shape of the roughened oxide film. Therefore, it is substantially impossible to obtain a stacked polysilicon electrode as shown in FIG. 23 by using the first manufacturing method.

Therefore, it can be said that the second manufacturing method described in the fourth embodiment is a very useful method for obtaining a three-dimensional electrode.

Embodiment 6 FIG. In the above description, water vapor as a component is used, but HF may be dissolved using a vapor as a component such as IPA (isopropyl alcohol). Since alcohol is sparse with respect to the oxide film 101, droplets obtained by condensation of alcohol vapor come into contact with the oxide film 101 with a smaller area than in the case of the same amount of water.

Therefore, even when the diameter of the hole 101h must be made fine when forming a capacitor of a highly integrated semiconductor device, it is possible to suitably cope with the use of alcohol.

[0071]

According to the first aspect of the present invention, it is possible to increase the surface area by roughening the semiconductor layer by a simple method of forming etching droplets on the surface of the semiconductor oxide film. Become. Therefore, by using the roughened semiconductor layer as an electrode, a capacitor having a large capacitance with respect to the occupied area can be easily obtained.

According to the second aspect of the present invention, the semiconductor oxide film can be partially removed by dissolving the etching gas after forming droplets of a desired size and number. Thereby, the control of the removal of the semiconductor oxide film becomes simple and reliable.

According to the third aspect of the invention, by using alcohol which is sparse with respect to the semiconductor oxide film, it is possible to reduce the contact area of the droplet with the surface of the semiconductor oxide film. This makes it possible to suitably cope with a case where the semiconductor device is highly integrated.

According to the fourth and fifth aspects of the present invention, there is provided a method of depositing a semiconductor layer on a semiconductor oxide film or a method of partially removing the semiconductor layer using the semiconductor oxide film as a mask. Can be realized. In particular, the structure described in claim 5 can be applied to the manufacture of a capacitor using a three-dimensional electrode because a semiconductor oxide film may be formed on the surface of a semiconductor layer.

According to the sixth aspect of the present invention, only the portion of the semiconductor oxide film where the surface of the semiconductor layer is to be roughened is covered with the resist film, whereby the semiconductor integrated circuit is roughened. A capacitor having a semiconductor layer and a capacitor having no semiconductor layer are simultaneously formed. Even when the occupied area is assigned to each capacitor, there is an advantage that the capacitance of the capacitor can be changed as desired depending on the success or failure of the surface roughening.

According to the structure described in claim 7, it is possible to partially remove silicon oxide generally used in the manufacture of a semiconductor integrated circuit by using hydrogen fluoride which is also generally used. Therefore, the method for manufacturing a semiconductor device according to the fourth and fifth aspects can be realized using existing materials. Furthermore, since hydrofluoric acid has a large etching effect on silicon oxide, in the method according to the first aspect of the present invention, efficient partial removal of the semiconductor oxide film is achieved, and furthermore, efficient production of a semiconductor device is achieved.

According to the structure of the eighth aspect, by controlling the temperature of the mounting table and the flow rates of gas and vapor, the number and size of droplets formed on the semiconductor oxide film can be obtained as desired. Becomes possible. Thus, for example, the method of manufacturing a semiconductor device according to the second aspect can be performed by the apparatus for manufacturing a semiconductor device according to the eighth aspect.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a structure of a manufacturing apparatus according to a first embodiment;

FIG. 2 is a cross-sectional view illustrating a method of partially removing an oxide film according to the first embodiment in the order of steps;

FIG. 3 is a cross-sectional view illustrating a method of partially removing the oxide film according to the first embodiment in the order of steps;

FIG. 4 is a cross-sectional view illustrating a method of partially removing the oxide film according to the first embodiment in the order of steps;

FIG. 5 is a cross-sectional view illustrating a method of partially removing the oxide film according to the first embodiment in the order of steps;

FIG. 6 is a cross-sectional view illustrating a method for partially removing the oxide film according to the second embodiment in the order of steps;

FIG. 7 is a cross-sectional view illustrating a method of partially removing an oxide film according to a second embodiment in the order of steps;

FIG. 8 is a cross-sectional view illustrating a method for manufacturing the first capacitor according to the third embodiment in the order of steps;

FIG. 9 is a cross-sectional view illustrating a method for manufacturing the first capacitor of the third embodiment in the order of steps;

FIG. 10 is a cross-sectional view illustrating a method for manufacturing the first capacitor according to the third embodiment in the order of steps;

FIG. 11 is a cross-sectional view illustrating the method for manufacturing the first capacitor of the third embodiment in the order of steps;

FIG. 12 is a cross-sectional view illustrating a method for manufacturing the second capacitor according to the fourth embodiment in the order of steps;

FIG. 13 is a cross-sectional view illustrating a method for manufacturing the second capacitor according to the fourth embodiment in the order of steps;

FIG. 14 is a cross-sectional view illustrating a method for manufacturing the second capacitor according to the fourth embodiment in the order of steps;

FIG. 15 is a cross-sectional view illustrating a method for manufacturing the second capacitor according to the fourth embodiment in the order of steps;

FIG. 16 is a cross-sectional view illustrating a method for manufacturing the second capacitor according to the fourth embodiment in the order of steps;

FIG. 17 is a cross-sectional view illustrating a method for manufacturing the second capacitor according to the fourth embodiment in the order of steps;

FIG. 18 is a cross-sectional view illustrating the method for manufacturing the second capacitor in the fourth embodiment in the order of steps;

FIG. 19 is a sectional view illustrating an example of the method of manufacturing the capacitor of the fifth embodiment in the order of steps.

FIG. 20 is a sectional view illustrating an example of the method of manufacturing the capacitor of the fifth embodiment in the order of steps.

FIG. 21 is a sectional view illustrating an example of the method of manufacturing the capacitor of the fifth embodiment in the order of steps.

FIG. 22 is a sectional view illustrating an example of the method of manufacturing the capacitor in the fifth embodiment in the order of steps.

FIG. 23 is a sectional view illustrating an example of the method of manufacturing the capacitor in the fifth embodiment in the order of steps.

FIG. 24 is a sectional view illustrating another example of the method of manufacturing the capacitor according to the fifth embodiment in the order of steps;

FIG. 25 is a sectional view illustrating another example of the method of manufacturing the capacitor of the fifth embodiment in the order of steps.

FIG. 26 is a sectional view illustrating another example of the method of manufacturing the capacitor of the fifth embodiment in the order of steps;

FIG. 27 is a cross-sectional view showing a conventional method of manufacturing a capacitor in the order of steps.

FIG. 28 is a sectional view illustrating a conventional method of manufacturing a capacitor in the order of steps.

FIG. 29 is a cross-sectional view showing a conventional method of manufacturing a capacitor in the order of steps.

FIG. 30 is a cross-sectional view showing a problem of a conventional method for manufacturing a capacitor.

FIG. 31 is a cross-sectional view showing a problem of a conventional method for manufacturing a capacitor.

[Description of Signs] 1 gas introduction pipe, 2 cooling pipe, 3 exhaust pipe, 4 vacuum pump, 5 shower head, 6 wafer, 7 chamber, 8 susceptor, 9 heater, 100, 200,
300 silicon substrate, 101, 201, 303, 30
3a, 303b oxide film, 101h, 202h hole, 10
2,102a water droplet, 202,304 photoresist,
203a, 203b, 302a, 302b, 401, 5
01 lower polysilicon electrode, 204a, 204b, 30
5a, 305b, 402, 502 Dielectric film, 205
a, 205b, 306a, 306b, 403, 503 Upper polysilicon electrode, 301, 400, 500 interlayer insulating film, 302 polysilicon film, 303h Exposed hole.

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Shunichi Muraoka 4-1-1, Mizuhara, Itami-shi, Hyogo Ryoden Semiconductor System Engineering Co., Ltd. (72) Tadashi Nakamura 4-1-1, Mizuhara, Itami-shi, Hyogo Ryoden Semiconductor System Engineering Co., Ltd.

Claims (8)

[Claims] (A) a step of partially removing a semiconductor oxide film by etching droplets on a surface; and (b) a step of using the semiconductor oxide film to make a rough surface contact with the semiconductor oxide film. Forming a planarized semiconductor layer. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the etching droplet is performed before the step (a), and (c) the etching droplet is formed on the surface of the semiconductor oxide film. A method for manufacturing a semiconductor device, comprising: a step of forming a droplet; and (d) a step of dissolving an etching gas in the droplet. 3. The method of manufacturing a semiconductor device according to claim 1, wherein the etching droplet contains alcohol. 4. The method for manufacturing a semiconductor device according to claim 2, wherein the step (a) is a step of forming a depression in the semiconductor oxide film, and the step (b) is a step of forming the semiconductor layer. Depositing a semiconductor device on the semiconductor oxide film. 5. The method of manufacturing a semiconductor device according to claim 2, wherein said semiconductor oxide film is formed on said surface of said semiconductor layer, and said step (a) comprises: A method of manufacturing a semiconductor device, wherein the step (b) is a step of partially removing the semiconductor layer using the semiconductor oxide film as a mask. 6. The method for manufacturing a semiconductor device according to claim 4, wherein the step (c) is performed before the step (c), and (e) the semiconductor oxide film is partially formed using a resist film. A method of manufacturing a semiconductor device, further comprising a step of covering the semiconductor device. 7. The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor oxide film and the etching gas are
A method for manufacturing a semiconductor device, comprising a silicon oxide and hydrogen fluoride. 8. An inlet pipe for conducting gas and vapor for etching, an outlet pipe, and a mounting table on which a semiconductor oxide film is mounted and whose temperature can be controlled, wherein the inlet pipe and the outlet pipe are connected. An apparatus for manufacturing a semiconductor device, comprising: