JPH10135257A - Device manufacturing resin sealed semiconductor and die therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin high-reliability resin sealed semiconductor device and die therefor, whereby a resin flows uniformly to the front and back sides of a semiconductor element at the mold resin injection time, to improve the chargeability of the resin at the back side of the element. SOLUTION: A resin-sealed semiconductor device, having leads provided with a semiconductor element size and approximately the same size as that of the element, is manufactured by setting the semiconductor element 11 in a cavity defined by an upper and lower dies 15, 16, placing a gate 17 and air vent 18 on a vertical diagonal line of the cavity, charging a mold resin 13 through the gate 17 and venting air through the air vent 18.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a method for manufacturing a resin-sealed semiconductor device and a mold for the method.

[0002]

2. Description of the Related Art In recent years, IC cards and memory cards have been rapidly developed, and accordingly, thin and small resin-encapsulated semiconductor devices mounted in the cards have been required. In order to cope with the problem, many resin-sealed semiconductor devices have been proposed.

[0003] For example, there is the following one. FIG. 7 is a sectional view of such a conventional resin-encapsulated semiconductor device, and FIG. 8 is a side view of FIG. In these figures, 1 is a semiconductor element, 2 is a lead, 3 is a gold wire, 4
Is a mold resin, and by exposing the back surface of the semiconductor element 1, the thickness is reduced, and a semiconductor device having an area substantially equal to the size of the semiconductor element 1 provided with the leads 2 within the size of the semiconductor element 1 is obtained. ing.

[0004]

However, in the above-mentioned conventional resin-encapsulated semiconductor device, the back surface of the semiconductor element 1 is exposed to the outside as shown in FIG. There is a possibility that cracks 5 and the like may be generated and characteristics may be impaired. As shown in FIG. 10, the back surface of the semiconductor element 1 is not exposed and is very thin.
Consider a device covered with.

In this type of apparatus, as shown in FIG. 11, since the position of the gate 8 for resin injection and the air vent 9 are on the same plane, as shown in FIG.
The filling property of the resin on the back side becomes poor. In these figures, reference numeral 6 denotes an upper die, and 7 denotes a lower die. The present invention eliminates the above-mentioned problems, and allows the resin flow at the time of mold resin injection to flow uniformly to the front and back surfaces of the semiconductor element, to improve the filling property of thin resin on the back side of the semiconductor element, and to reduce the thickness. It is an object of the present invention to provide a method of manufacturing a highly reliable resin-sealed semiconductor device and a mold thereof.

[0006]

According to the present invention, there is provided a method for manufacturing a resin-encapsulated semiconductor device which is substantially equal in size to a semiconductor element provided with leads within the size of the semiconductor element. In the above, the semiconductor element is set in a cavity formed by an upper mold and a lower mold, a gate and an air vent are arranged on a diagonal line in a vertical direction of the cavity, a mold resin is filled from the gate, and the air is filled. The air was vented from the vent.

As described above, since the gate and the air vent are formed on the diagonal line in the vertical direction of the cavity, the flow of the resin at the time of injection of the mold resin flows uniformly to the front and back surfaces of the semiconductor element, The filling property of the resin is improved. (2) A gate and an air vent are formed at diagonal positions in the thickness direction of the semiconductor element in a resin-sealed type semiconductor device manufacturing mold substantially equal to the size of the semiconductor element in which leads are provided within the size of the semiconductor element. Thus, the upper mold and the lower mold are combined.

As described above, the gate and the air vent are formed on the diagonal line in the thickness direction of the semiconductor device element by sandwiching the lead frame of the semiconductor element between the upper mold and the lower mold. Can be provided.

[0009]

Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a sectional view of a resin-sealed semiconductor device showing an embodiment of the present invention, and FIG. 2 is a view showing a resin-sealing process of the resin-sealed semiconductor device. In these figures, 11 is a semiconductor element, 12 is a lead, 13 is a mold resin, 15 is an upper mold, 15A is a plane portion of the upper mold, 16 is a lower mold, and 16A is a projection of the lower mold. , 17 are gates and 18 is an air vent.

As shown in these figures, as shown in FIG.
The size of the lead 12 is provided within the size, and the molding resin 13 covers the whole. And the thickness of the whole device is 0.8 ~
It is about 0.6 mm. The position of the gate 17 and the position of the air vent 18 are on diagonal lines in the vertical direction of the apparatus, and are formed at the boundary between the upper mold 15 and the lower mold 16.

Hereinafter, the manufacturing method of this embodiment will be described. First, a gate 17 is formed at a device corner near the back surface of the semiconductor element 11, and an air vent 18 is formed at a device corner near the diagonal surface of the semiconductor device 11. As a result, as shown in FIG. 2, the mold resin 13 flows from the gate 17 separately to the front surface / back surface of the semiconductor element 11.

As described above, since the gate 17 and the air vent 18 are respectively formed on the diagonal line in the thickness direction in the vertical direction of the cavity, as shown in FIG. It flows evenly to the front and back surfaces of the semiconductor element 11, and the filling property of the mold resin is improved. Next, a mold according to an embodiment of the present invention will be described in detail.

FIG. 3 is a view showing the structure of an upper mold showing an embodiment of the present invention. FIG. 3 (a) is a plan view of the upper mold, and FIG. 3 (b) is a front view of the upper mold. FIG. 3 (c) shows FIG.
FIG. 3A is a sectional view taken along line AA of FIG. 4A and 4B are views showing a structure of a lower mold according to an embodiment of the present invention. FIG. 4A is a plan view of the lower mold, and FIG. 4B is a front view of the lower mold. FIG. 4 (c) is a side view of the lower mold.

First, as shown in FIG. 3, the upper mold is formed with a substantially rectangular concave portion 15B (forming a cavity), and the periphery thereof is a flat portion 15A. next,
As shown in FIG. 4, the lower mold has a convex portion 16A, and the periphery thereof is a flat portion 16B. FIG. 5 is a plan view showing a state in which a semiconductor element is set in a lower mold according to an embodiment of the present invention, FIG. 6 is a combination diagram of the lower mold and the upper mold, and FIG. 6B is a top view of the combination of the lower mold and the upper mold, FIG. 6B is a front view of the combination of the lower mold and the upper mold, and FIG. 6C is AA in FIG.
It is a line sectional view.

As shown in these figures, a cavity is formed by a combination of an upper mold 15 and a lower mold 16, and the semiconductor element 11 having a lead frame 19 is formed in the cavity.
Is set. That is, the gate 17 and the air vent 18 are formed on the diagonal line in the vertical direction of the cavity. Further, the lead frame 19 has a structure sandwiched between the upper mold 15 and the lower mold 16. In addition, 21 is a resin supply port.

As described above, the respective dies are combined as shown in FIG. 6, and the lead frame 19 of the semiconductor element 11 set in the cavity as shown in FIG.
Inject mold resin. Thus, the semiconductor element 11
By sandwiching the lead frame 19 between the upper mold 15 and the lower mold 16 and forming a gate 17 and an air vent 18 on a diagonal line in the vertical direction of the cavity and performing resin sealing, FIG. The semiconductor device as shown can be manufactured, and the existing production line can be used as it is.

It should be noted that the present invention is not limited to the above-described embodiment, but various modifications can be made based on the gist of the present invention, and these are not excluded from the scope of the present invention. .

[0018]

As described above, according to the present invention, the following effects can be obtained. (1) According to the first aspect of the present invention, since the gate and the air vent are respectively formed on the diagonal line in the vertical direction of the cavity, the flow of the resin at the time of the injection of the mold resin is controlled by the front surface and the back surface of the semiconductor element. And the filling property of the mold resin is improved.

(2) According to the second aspect of the invention, the lead frame of the semiconductor element is sandwiched between the upper mold and the lower mold,
Since the gate and the air vent are formed on the diagonal line in the thickness direction of the semiconductor device element, it is possible to provide a mold with good mold resin filling property.

[Brief description of the drawings]

FIG. 1 is a sectional view of a resin-sealed semiconductor device according to an embodiment of the present invention.

FIG. 2 is a view showing a resin sealing step of the resin-sealed semiconductor device according to the embodiment of the present invention.

FIG. 3 is a view showing a structure of an upper mold showing an embodiment of the present invention.

FIG. 4 is a view showing a structure of a lower mold according to the embodiment of the present invention.

FIG. 5 is a plan view showing a state where a semiconductor element is set in a lower mold according to the embodiment of the present invention.

FIG. 6 is a combination diagram of a lower mold and an upper mold showing an embodiment of the present invention.

FIG. 7 is a cross-sectional view of a conventional resin-encapsulated semiconductor device.

FIG. 8 is a side view of A side in FIG. 7;

FIG. 9 is a diagram showing a problem of the related art.

FIG. 10 is a cross-sectional view of another conventional resin-encapsulated semiconductor device.

FIG. 11 is a view illustrating a method of forming another conventional resin-encapsulated semiconductor device.

FIG. 12 is an explanatory diagram of a problem of another conventional resin-encapsulated semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 Semiconductor element 12 Lead 13 Mold resin 15 Upper mold 15A Upper mold flat part 15B Substantially rectangular concave part 16 Lower mold 16A Lower mold convex part 16B Flat part 17 Gate 18 Air vent 19 Lead frame 21 Resin supply port

Claims (2)

[Claims] 1. A method for manufacturing a resin-encapsulated semiconductor device having a size substantially equal to the size of a semiconductor element in which leads are provided within the size of the semiconductor element, wherein the semiconductor element is set in a cavity formed by an upper mold and a lower mold. A method of manufacturing a resin-encapsulated semiconductor device, comprising: arranging a gate and an air vent on a vertical diagonal line of the cavity, filling the gate with a mold resin, and bleeding air from the air vent. 2. A gate and an air vent are formed at diagonal positions in a thickness direction of a semiconductor element in a resin-sealed type semiconductor device manufacturing die substantially equal in size to a semiconductor element in which leads are provided within the size of the semiconductor element. A mold for manufacturing a resin-encapsulated semiconductor device, comprising a combination of an upper mold and a lower mold.