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JPH10135013A - Manufacture of chip part - Google Patents

Manufacture of chip part

Info

Publication number
JPH10135013A
JPH10135013A JP8290442A JP29044296A JPH10135013A JP H10135013 A JPH10135013 A JP H10135013A JP 8290442 A JP8290442 A JP 8290442A JP 29044296 A JP29044296 A JP 29044296A JP H10135013 A JPH10135013 A JP H10135013A
Authority
JP
Japan
Prior art keywords
film
porcelain
forming
insulating film
conductor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP8290442A
Other languages
Japanese (ja)
Inventor
Sadaaki Kurata
定明 倉田
Ikuo Kakiuchi
育雄 垣内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHUKI SEIKI KK
Taiyo Yuden Co Ltd
Original Assignee
CHUKI SEIKI KK
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHUKI SEIKI KK, Taiyo Yuden Co Ltd filed Critical CHUKI SEIKI KK
Priority to JP8290442A priority Critical patent/JPH10135013A/en
Publication of JPH10135013A publication Critical patent/JPH10135013A/en
Withdrawn legal-status Critical Current

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  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Non-Adjustable Resistors (AREA)

Abstract

PROBLEM TO BE SOLVED: To manufacture appropriately with less processes, without employing a process where a magnetic substrate is divided by aligning plural magnetic elements in a specified orientation with a conductor film formation surface being front side, and depositing an armoring insulation film by a thin-film method with its both sides in longitudinal direction masked. SOLUTION: Firstly, a magnetic element 1 whose edge is rounded is manufactured. Then, sputtering or vapor-depositing is performed with the magnetic element 1 housed in a path 2a of a mask device 2, to form, a resistance film 3. Then, a trimming work is applied to the resistance film 3. With this magnetic element 1 housed in the path of anther mask device, sputtering or vapor- depositing is performed to form an armoring insulating film. Then, an electrode conductor film is formed on the magnetic element 1, after the insulation film has been formed. Thereby, without employing a process where a ceramic substrate is divided, a chip resistor is manufactured appropriately and stably with fewer number of processes.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、基板等への面実装
を可能としたチップ部品の製造方法に関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a chip component which can be mounted on a substrate or the like.

【0002】[0002]

【従来の技術】図13にはこの種従来のチップ部品とし
て知られる角型のチップ抵抗器を示してある。
2. Description of the Related Art FIG. 13 shows a square chip resistor known as such a conventional chip component.

【0003】このチップ抵抗器は、横断面長方形の角柱
形状を成す磁器素子101と、磁器素子101の一側面
(上面)に形成された抵抗膜102と、抵抗膜102を
覆う外装用絶縁膜103と、抵抗膜102の端部と導通
する一対の電極用導体膜104とから構成されている。
The chip resistor includes a ceramic element 101 having a rectangular column shape with a rectangular cross section, a resistance film 102 formed on one side surface (upper surface) of the ceramic element 101, and an exterior insulating film 103 covering the resistance film 102. And a pair of electrode conductive films 104 that are electrically connected to the end of the resistive film 102.

【0004】上記のチップ抵抗器は、分割溝を格子状ま
たは所定間隔で有する磁器基板を用意する工程と、磁器
基板一面の分割溝で囲まれる矩形領域に抵抗膜をそれぞ
れ形成する工程と、抵抗値調整のためのトリミングを各
抵抗膜に対し行う工程と、磁器基板を分割溝に沿って素
子個片に分割する工程と、分割された磁器素子の両端部
に抵抗膜と導通する一対の電極用導体膜を形成する工程
と、各抵抗膜を外装用絶縁膜で被覆する工程とを経て製
造されている。
[0004] The above chip resistor includes a step of preparing a porcelain substrate having divided grooves at a lattice shape or at predetermined intervals, a step of forming a resistive film in a rectangular area surrounded by the divided grooves on one surface of the porcelain substrate, A step of performing trimming for each resistance film for value adjustment; a step of dividing the porcelain substrate into element pieces along the division grooves; and a pair of electrodes that conduct to the resistance film at both ends of the divided porcelain element. It is manufactured through a step of forming a conductor film for use and a step of covering each resistance film with an insulating film for exterior use.

【0005】部品によっては、電極用導体膜を形成する
工程を抵抗膜を形成する工程とトリミングを行う工程と
の間で実施し、トリミングを行う工程の後に外装用絶縁
膜を形成する工程を実施して最終的に磁器基板を分割す
るようにしたものもある。
[0005] For some components, the step of forming a conductor film for an electrode is performed between the step of forming a resistive film and the step of performing trimming, and the step of forming an exterior insulating film is performed after the step of performing trimming. In some cases, the porcelain substrate is finally divided.

【0006】[0006]

【発明が解決しようとする課題】上記従来のチップ抵抗
器では、磁器基板を素子個片に分割する面倒があると共
に、分割時に素子個片に欠けや割れが生じ易いことから
歩留まりが低下し易い。また、分割時に発生したバリが
部品に残留して部品外観を悪化させると共に、該バリが
支障となって基板等に実装を行う際の部品供給に不良を
生じ易い不具合がある。上記の不具合は、同様の製造方
法、特に磁器基板を分割する工程を有する他のチップ部
品、例えばチップジャンパ等でも同じように生じ得る。
In the above-mentioned conventional chip resistor, it is troublesome to divide the porcelain substrate into element pieces, and the element pieces are easily chipped or cracked at the time of division, so that the yield tends to be reduced. . In addition, burrs generated at the time of division remain on the component to deteriorate the appearance of the component, and the burrs hinder the component supply when mounting the component on a substrate or the like. The above-mentioned problem can also occur in a similar manufacturing method, particularly in other chip components having a step of dividing the porcelain substrate, such as a chip jumper.

【0007】本発明は上記事情に鑑みてなされたもの
で、その目的とするところは、高品質のチップ部品を簡
単に得ることができるチップ部品の製造方法を提供する
ことにある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a method for manufacturing a chip component capable of easily obtaining a high quality chip component.

【0008】[0008]

【課題を解決するための手段】上記目的を達成するた
め、本発明に係るチップ部品の製造方法は、角柱形状を
成す磁器素子の一側面に回路用導体膜を、磁器素子の両
端部にこれと導通する一対の電極用導体膜をそれぞれ備
え、回路用導体膜の電極用導体膜で挟まれる部分を外装
用絶縁膜で被覆したチップ部品の製造方法において、エ
ッジに丸みを帯びた角柱形状の磁器素子を得る工程と、
複数の磁器素子を所定向きで且つ同一側面が表となるよ
うに並べ、その幅方向両側をマスキングした状態で、各
磁器素子の一側面に薄膜法により回路用導体膜を形成す
る工程と、回路用導体膜形成後の複数の磁器素子を所定
向きで且つ導体膜形成面が表となるように並べ、その長
手方向両側をマスキングした状態で、各磁器素子の導体
膜形成面に薄膜法により外装用絶縁膜を形成する工程
と、外装用絶縁膜形成後の磁器素子の両端部に厚膜法ま
たは薄膜法により電極用導体膜を形成する工程とを具備
した、ことをその主たる特徴としている。
In order to achieve the above object, a method of manufacturing a chip component according to the present invention is characterized in that a circuit conductor film is formed on one side surface of a porcelain element having a prismatic shape, and is provided on both ends of the porcelain element. In a method for manufacturing a chip component in which a pair of electrode conductive films that are electrically connected to each other, and a portion of the circuit conductive film sandwiched between the electrode conductive films is covered with an exterior insulating film, a rectangular column shape with rounded edges is provided. Obtaining a porcelain element;
Forming a circuit conductor film on one side surface of each porcelain element by a thin-film method in a state where a plurality of porcelain elements are arranged in a predetermined direction and the same side faces up, and both sides in the width direction are masked; A plurality of ceramic elements after the formation of the conductive film are arranged in a predetermined direction so that the surface on which the conductive film is formed is facing up, and both sides in the longitudinal direction are masked. The main feature of the present invention is that the method includes a step of forming an insulating film for use and a step of forming a conductor film for an electrode at both ends of the ceramic element after the formation of the insulating film for exterior by a thick film method or a thin film method.

【0009】このチップ部品の製造方法によれば、上記
各工程を実施することにより、磁器基板を分割するとい
った煩雑な工程を採用することなく、所期のチップ抵抗
器を少ない工程数にて的確に製造できる。
According to this method of manufacturing a chip component, by performing each of the above-described steps, a desired chip resistor can be accurately formed in a small number of steps without employing a complicated step of dividing a ceramic substrate. Can be manufactured.

【0010】[0010]

【発明の実施の形態】図1乃至図9には本発明をチップ
抵抗器に適用した実施形態を示してある。以下、図1乃
至図9に従って本実施形態に係るチップ抵抗器の製造方
法について説明する。
1 to 9 show embodiments in which the present invention is applied to a chip resistor. Hereinafter, a method of manufacturing the chip resistor according to the present embodiment will be described with reference to FIGS.

【0011】製造に際しては、まず、図1に示すような
磁器素子1、詳しくは、横断面正方形で所定の長さを有
し、且つエッジ(角及び稜線)に丸みを帯びた角柱形状
の磁器素子1を用意する。
At the time of manufacture, first, a porcelain element 1 as shown in FIG. 1, more specifically, a porcelain element having a square cross section, a predetermined length, and rounded edges (corners and ridges). Element 1 is prepared.

【0012】この磁器素子1は、アルミナ粉(70w%
以上)にバインダ及び溶剤を混合して調製したセラミッ
クスラリーを押出成形して横断面正方形の棒状基材を得
るステップと、棒状基材を所定寸法に切断するステップ
と、切断チップを焼成温度1300〜1500℃,焼成
時間2時間の条件で焼成するステップと、焼成後の切断
チップを遠心バレルや偏心回転バレル等のバレル研磨機
によって研磨するステップを経て作成される。焼成後の
切断チップは、上記のバレル研磨によってエッジ(角及
び稜線)のバリ除去と丸み付けを施される。
The porcelain element 1 is made of alumina powder (70 w%
Extruding a ceramic slurry prepared by mixing a binder and a solvent to obtain a rod-shaped substrate having a square cross section, cutting the rod-shaped substrate into predetermined dimensions, and firing the cut chips at a firing temperature of 1300 to 1300. It is formed through a step of firing at 1500 ° C. and a firing time of 2 hours, and a step of polishing the cut chips after firing with a barrel polishing machine such as a centrifugal barrel or an eccentric rotary barrel. The cut chips after firing are subjected to the above-described barrel polishing to remove burrs and round off edges (corners and ridges).

【0013】次に、図2に示すようなマスク器具2、詳
しくは、磁器素子1の横断面形よりも僅かに大きな横断
面正方形の通路2aを等間隔で平行に備え、各通路2a
の上面中央に磁器素子1の側面幅よりも小さな幅寸法の
開口2bを直線状に備えたマスク器具2を準備する。ち
なみに、開口2bの幅寸法は後述する抵抗膜3の幅寸法
を規定し、その位置は抵抗膜3の形成位置を規定する。
Next, a mask device 2 as shown in FIG. 2, more specifically, a plurality of passages 2a having a square cross section slightly larger than the cross sectional shape of the porcelain element 1 are provided in parallel at equal intervals.
A mask device 2 having an opening 2b having a width smaller than the width of the side surface of the porcelain element 1 in the center of the upper surface of the ceramic device 1 is prepared. Incidentally, the width dimension of the opening 2b defines the width dimension of the resistive film 3, which will be described later, and its position defines the position where the resistive film 3 is formed.

【0014】そして、マスク器具2の通路2a内に磁器
素子1を縦向きで挿入し、各通路2a内に複数の磁器素
子1を縦向きで隙間なく並べた状態で、各磁器素子1の
一側面の開口2bから露出する部分に、スパッタリング
法または蒸着法によってNiCr系の抵抗膜3を形成す
る。
Then, the porcelain elements 1 are vertically inserted into the passages 2a of the mask device 2, and a plurality of the porcelain elements 1 are vertically arranged without gaps in each of the passages 2a. A NiCr-based resistive film 3 is formed on a portion exposed from the side opening 2b by sputtering or vapor deposition.

【0015】磁器素子1のエッジ(ここでは端面と側面
との境界)に予め丸みが形成されていることから、縦方
向に隙間なく並ぶ磁器素子1の当接面上部には図3に示
すような凹みh1がエッジの丸みに基づいて形成される
ことになり、スパッタリング法または蒸着法による着膜
は、各磁器素子1の一側面のみならずこの凹みh1に対
しても実施される。
Since the edge of the porcelain element 1 (here, the boundary between the end face and the side face) is previously rounded, as shown in FIG. The concave h1 is formed on the basis of the roundness of the edge, and the deposition by the sputtering method or the vapor deposition method is performed not only on one side surface of each of the ceramic elements 1 but also on the concave h1.

【0016】つまり、着膜後に磁器素子1をマスク器具
2の通路2aから抜き出せば、各磁器素子1の一側面に
は図4に示すような形状、詳しくは、磁器素子1の長手
方向に延び且つ両端が磁器素子1の端面に及ぶような帯
状の抵抗膜3が形成されることになる。
That is, if the porcelain element 1 is pulled out from the passage 2a of the mask device 2 after the film is deposited, one side surface of each porcelain element 1 extends in the shape as shown in FIG. In addition, the belt-shaped resistance film 3 whose both ends reach the end face of the ceramic element 1 is formed.

【0017】次に、図5に示すように、抵抗膜2にレー
ザ光LBを照射し、照射レーザ光により抵抗膜3に溝3
aを形成してトリミング加工を実施し、抵抗値の微調整
を行う。
Next, as shown in FIG. 5, the resistive film 2 is irradiated with laser light LB, and the resistive film 3 is formed in the resistive film 3 by the irradiated laser light.
a is formed, trimming is performed, and fine adjustment of the resistance value is performed.

【0018】次に、図6に示すようなマスク器具4、詳
しくは、磁器素子1の縦断面形よりも僅かに大きな縦断
面長方形の通路4aを等間隔で平行に備え、各通路4a
の上面中央に磁器素子1の側面長さよりも小さな幅寸法
の開口4bを直線状に備えたマスク器具4を準備する。
ちなみに、開口4bの幅寸法は後述する外装用絶縁膜5
の幅寸法を規定し、その位置は外装用絶縁膜5の形成位
置を規定する。
Next, mask devices 4 as shown in FIG. 6, more specifically, passages 4a having a rectangular cross section slightly larger than the vertical cross section of the porcelain element 1 are provided in parallel at equal intervals, and each of the passages 4a
A mask device 4 having an opening 4b having a width smaller than the side length of the porcelain element 1 in the center of the upper surface of the ceramic element 1 is prepared.
Incidentally, the width dimension of the opening 4b is determined by the exterior insulating film 5 described later.
Is defined, and the position defines the position where the exterior insulating film 5 is formed.

【0019】そして、マスク器具4の通路4a内に抵抗
膜形成後の磁器素子1を横向きで且つ抵抗膜形成面が表
となるように挿入し、各通路4a内に複数の磁器素子1
を横向きで隙間なく並べた状態で、各磁器素子1の抵抗
膜形成面の開口4bから露出する部分に、スパッタリン
グ法または蒸着法によってSiO2 ,Al23等のセラ
ミクス系の外装用絶縁膜5を形成する。
Then, the ceramic element 1 after the formation of the resistive film is inserted into the passage 4a of the mask device 4 so that the surface on which the resistive film is formed is turned sideways, and a plurality of the ceramic elements 1 are inserted into each passage 4a.
Are arranged side by side without any gaps, and a ceramic-based insulating insulating film such as SiO 2 , Al 2 O 3 or the like is formed by sputtering or vapor deposition on a portion exposed from the opening 4 b of the resistance film forming surface of each porcelain element 1. 5 is formed.

【0020】磁器素子1のエッジ(ここでは側面と側面
の境界)に予め丸みが形成されていることから、横方向
に隙間なく並ぶ磁器素子1の当接面上部には図7に示す
ような凹みh2がエッジの丸みに基づいて形成されるこ
とになり、スパッタリング法または蒸着法による着膜
は、各磁器素子1の一側面のみならずこの凹みh2に対
しても実施される。
Since the edges of the porcelain element 1 (here, the boundary between the side surfaces) are formed in advance, the upper part of the contact surface of the porcelain element 1 arranged without any gap in the lateral direction as shown in FIG. The recess h2 is formed based on the roundness of the edge, and the deposition by the sputtering method or the vapor deposition method is performed not only on one side surface of each of the ceramic elements 1 but also on the recess h2.

【0021】つまり、着膜後に磁器素子1をマスク器具
4の通路4aから抜き出せば、各磁器素子1の抵抗膜形
成面には図8に示すような形状、詳しくは、磁器素子1
の幅方向に延び且つ両端が隣接する磁器素子1の側面に
及ぶような帯状の外装用絶縁膜5が形成されることにな
る。
That is, if the porcelain element 1 is pulled out from the passage 4a of the mask device 4 after the deposition, the resistive film forming surface of each porcelain element 1 has a shape as shown in FIG.
A band-like exterior insulating film 5 extending in the width direction and extending over both sides of the adjacent ceramic element 1 is formed.

【0022】次に、図9に示すように、絶縁膜形成後の
磁器素子1の長手方向両端部に、厚膜法または薄膜法に
よって電極用導体膜6を形成する。厚膜法による場合に
は、Ni,Sn−Pb等の金属粉にバインダ及び溶剤を
混合して調製した導体ペーストを塗布或いはディップ等
の手法によって磁器素子1の長手方向両端部に付着し、
これを焼き付ければよく、また、薄膜法による場合に
は、バレルメッキ等の手法によりNi,Sn−Pb等の
導体膜を磁器素子1の長手方向両端部に着膜すればよ
い。以上でチップ抵抗器の製造を完了する。
Next, as shown in FIG. 9, a conductor film 6 for an electrode is formed on both ends in the longitudinal direction of the ceramic element 1 after the formation of the insulating film by a thick film method or a thin film method. In the case of the thick film method, a conductive paste prepared by mixing a binder and a solvent with a metal powder such as Ni or Sn-Pb is applied to both ends in the longitudinal direction of the porcelain element 1 by a method such as coating or dipping,
This may be baked, and when a thin film method is used, a conductor film of Ni, Sn-Pb, or the like may be deposited on both ends in the longitudinal direction of the ceramic element 1 by a technique such as barrel plating. Thus, the manufacture of the chip resistor is completed.

【0023】このように、本実施形態に係るチップ抵抗
器の製造方法によれば、エッジに丸みを帯びた磁器素子
1を得る工程と、磁器素子1をマスク器具2の通路2a
内に収容した状態でスパッタリングまたは蒸着を実施し
て抵抗膜3を形成する工程と、抵抗膜3に対しトリミン
グ加工を施す工程と、抵抗膜形成後の磁器素子1をマス
ク器具4の通路4a内に収容した状態でスパッタリング
または蒸着を実施して外装用絶縁膜5を形成する工程
と、絶縁膜形成後の磁器素子1に電極用導体膜6を形成
する工程を実施することにより、磁器基板を分割すると
いった煩雑な工程を採用することなく、所期のチップ抵
抗器を少ない工程数にて的確且つ安定して製造すること
ができる。
As described above, according to the method of manufacturing the chip resistor according to the present embodiment, the step of obtaining the porcelain element 1 having a rounded edge and the passage of the porcelain element 1 to the passage 2a of the mask device 2
Forming a resistive film 3 by performing sputtering or vapor deposition in a state where the resistive film 3 is trimmed, and removing the porcelain element 1 after the resistive film formation into the passage 4 a of the mask device 4. The step of forming the exterior insulating film 5 by performing sputtering or vapor deposition in the state of being housed in the ceramic element 1 and the step of forming the conductor film 6 for an electrode on the ceramic element 1 after the formation of the insulating film are performed. The desired chip resistor can be accurately and stably manufactured in a small number of steps without employing complicated steps such as division.

【0024】また、従来のような基板分割工程が不要と
なるため、分割時に発生していた欠けや割れの問題を回
避して製造歩留まりを向上できると共に、分割時に発生
するバリを原因とした外観不良や部品供給不良の問題を
排除して、バルク供給に適した高品質のチップ抵抗器を
得ることができる。
Further, since the conventional substrate dividing step is not required, the problem of chipping or cracking that occurred at the time of division can be avoided, and the manufacturing yield can be improved. It is possible to obtain a high-quality chip resistor suitable for bulk supply by eliminating the problem of defective or component supply failure.

【0025】更に、複数の磁器素子1を縦向きで且つ同
一側面が表となるように並べ、その幅方向両側をマスク
器具2によってマスキングした状態で、スパッタリング
法または蒸着法により抵抗膜1を着膜すると共に、抵抗
膜形成後の複数の磁器素子1を横向きで且つ抵抗膜形成
面が表となるように並べ、その長手方向両側をマスク器
具2によってマスキングした状態で、スパッタリング法
または蒸着法により外装用絶縁膜5を着膜することによ
り、磁器素子1の一側面に、磁器素子1の長手方向に延
び且つ両端が磁器素子1の端面に及ぶような帯状の抵抗
膜3と、磁器素子1の幅方向に延び且つ両端が隣接する
磁器素子1の側面に及ぶような帯状の外装用絶縁膜5と
を、高精度に、しかも複数の磁器素子1に対して一括で
効率良く形成することができる。
Further, a plurality of porcelain elements 1 are arranged vertically so that the same side faces the front side, and the resistive film 1 is deposited by a sputtering method or a vapor deposition method in a state where both sides in the width direction are masked by the mask device 2. Along with forming the film, the plurality of ceramic elements 1 after the formation of the resistive film are arranged sideways so that the surface on which the resistive film is formed is face-up, and both sides in the longitudinal direction are masked by the mask device 2. By depositing the exterior insulating film 5, a band-shaped resistance film 3 extending in the longitudinal direction of the ceramic element 1 and having both ends reaching the end face of the ceramic element 1 on one side surface of the ceramic element 1, And a strip-shaped exterior insulating film 5 extending in the width direction and having both ends reaching the side surfaces of the adjacent ceramic element 1 with high accuracy and efficiently and collectively for a plurality of ceramic elements 1. Door can be.

【0026】尚、上述の実施形態では、抵抗膜3及び絶
縁膜5を着膜する際に、磁器素子1の不要部分を一括で
覆うマスク器具2,4を用いたものを例示したが、下記
のような方法を取れば、マスク器具2,4を用いなくと
も同様の着膜を行うことができる。
In the above-described embodiment, the mask devices 2 and 4 are used to cover unnecessary portions of the porcelain element 1 at the time of depositing the resistive film 3 and the insulating film 5. By adopting such a method, the same deposition can be performed without using the mask devices 2 and 4.

【0027】つまり、抵抗膜形成時には、図10(a)
に示すように抵抗膜形成領域を残して磁器素子1の幅方
向両端部にレジストr1を付着させ、同図(b)に示す
ようにこれを一側面(抵抗膜を形成する側面)が表とな
るように隙間なくマトリクス状に並べた状態で、スパッ
タリング法または蒸着法によって抵抗膜を着膜し、着膜
後に各磁器素子1のレジストr1を溶剤等を用いて一括
で除去する。また、絶縁膜形成時には、図11(a)に
示すように絶縁膜形成領域を残して磁器素子1の長手方
向両端部のレジストr2を付着させ、同図(b)に示す
ようにこれを一側面(絶縁膜を形成する面)が表となる
ように隙間なくマトリクス状に並べた状態で、スパッタ
リング法または蒸着法によって絶縁膜を着膜し、着膜後
に各磁器素子1のレジストr2を溶剤等を用いて一括で
除去する。
That is, at the time of forming the resistive film, FIG.
As shown in (b), a resist r1 is attached to both ends in the width direction of the porcelain element 1 while leaving a resistive film forming region, and as shown in FIG. A resistive film is deposited by a sputtering method or a vapor deposition method in a state where the resistive films are arranged in a matrix without gaps, and the resists r1 of the respective ceramic elements 1 are collectively removed using a solvent or the like after the deposition. Further, at the time of forming the insulating film, resists r2 at both ends in the longitudinal direction of the ceramic element 1 are adhered while leaving the insulating film forming region as shown in FIG. 11A, and this is removed as shown in FIG. An insulating film is deposited by a sputtering method or a vapor deposition method in a state where the side surfaces (the surface on which the insulating film is formed) are arranged in a matrix without gaps, and after the deposition, the resist r2 of each porcelain element 1 is dissolved in a solvent. Etc. to remove them all at once.

【0028】また、上述の実施形態では、磁器素子とし
て横断面正方形のものを例示したが、横断面形が長方形
或いは他の多角形のものを磁器素子として用いても良
い。勿論、図12に示すように、中央部11aの外形が
両端部11bの外形よりも小さなものを磁器素子11と
して用い、中央部表面に絶縁膜を形成し両端部表面に電
極用導体膜を形成するようにしても良い。
In the above embodiment, the porcelain element has a square cross section. However, a porcelain element having a rectangular cross section or another polygonal shape may be used. Of course, as shown in FIG. 12, the outer shape of the central portion 11a is smaller than the outer shape of both end portions 11b as the porcelain element 11, an insulating film is formed on the central portion surface, and an electrode conductive film is formed on both end surfaces. You may do it.

【0029】さらに、上述の実施形態では、本発明をチ
ップ抵抗器に適用したものを示したが、本発明はチップ
抵抗器に限らず、角柱形状を成す磁器素子の一側面に回
路用導体膜を、磁器素子の両端部にこれと導通する一対
の電極用導体膜をそれぞれ備え、回路用導体膜の電極用
導体膜で挟まれる部分を外装用絶縁膜で被覆したチップ
部品であれば、チップ抵抗器以外のチップ部品、例え
ば、チップジャンパやチップコンデンサやチップインダ
クタ等にも広く適用でき、同様の効果を得ることができ
る。
Further, in the above embodiment, the present invention is applied to a chip resistor. However, the present invention is not limited to the chip resistor, and a circuit conductor film is formed on one side surface of a prismatic porcelain element. If the chip component is provided with a pair of electrode conductor films electrically connected to both ends of the porcelain element, and a portion of the circuit conductor film sandwiched between the electrode conductor films is covered with an exterior insulating film, a chip is used. The present invention can be widely applied to chip components other than resistors, for example, chip jumpers, chip capacitors, chip inductors, and the like, and similar effects can be obtained.

【0030】[0030]

【発明の効果】以上詳述したように、本発明によれば、
磁器基板を分割するといった煩雑な工程を採用すること
なく、所期のチップ部品を少ない工程数にて的確且つ安
定して製造することができる。また、従来のような基板
分割工程が不要となるため、分割時に発生していた欠け
や割れの問題を回避して製造歩留まりを向上できると共
に、分割時に発生するバリを原因とした外観不良や部品
供給不良の問題を排除して、バルク供給に適した高品質
のチップ部品を得ることができる。
As described in detail above, according to the present invention,
The desired chip component can be accurately and stably manufactured with a small number of processes without employing a complicated process such as dividing the porcelain substrate. Further, since the conventional substrate dividing step is not required, the problem of chipping or cracking that occurred at the time of division can be avoided to improve the production yield, and at the same time, appearance defects and parts due to burrs generated at the time of division can be improved. By eliminating the problem of defective supply, a high-quality chip component suitable for bulk supply can be obtained.

【0031】更に、複数の磁器素子を所定向きで且つ同
一側面が表となるように並べ、その幅方向両側をマスキ
ングした状態で、薄膜法により回路用導体膜を着膜する
と共に、回路用導体膜形成後の複数の磁器素子を所定向
きで且つ導体膜形成面が表となるように並べ、その長手
方向両側をマスキングした状態で、薄膜法により外装用
絶縁膜を着膜することにより、磁器素子の一側面に、磁
器素子の長手方向に延び且つ両端が磁器素子の端面に及
ぶような帯状の回路用導体膜と、磁器素子の幅方向に延
び且つ両端が隣接する磁器素子の側面に及ぶような帯状
の外装用絶縁膜とを、高精度に、しかも複数の磁器素子
に対して一括で効率良く形成することができる。
Further, a circuit conductor film is deposited by a thin film method in a state where a plurality of porcelain elements are arranged in a predetermined direction and the same side face is turned on, and both sides in the width direction are masked. By arranging a plurality of porcelain elements after film formation in a predetermined direction and with the conductor film formation surface facing up, and masking both sides in the longitudinal direction, an insulating insulating film is deposited by a thin film method to form a ceramic. On one side of the element, a strip-shaped circuit conductor film extending in the longitudinal direction of the porcelain element and both ends reaching the end face of the porcelain element, and extending in the width direction of the porcelain element and both ends reaching the side of the adjacent porcelain element Such a band-shaped exterior insulating film can be formed with high accuracy and collectively and efficiently for a plurality of porcelain elements.

【図面の簡単な説明】[Brief description of the drawings]

【図1】磁器素子の斜視図FIG. 1 is a perspective view of a porcelain element.

【図2】マスク器具と磁器素子の収容状態を示す図FIG. 2 is a view showing a state in which a mask device and a porcelain element are housed.

【図3】磁器素子への抵抗膜着膜状態を示す図FIG. 3 is a view showing a state in which a resistive film is deposited on a ceramic element.

【図4】抵抗膜形成後の磁器素子の斜視図FIG. 4 is a perspective view of a porcelain element after a resistive film is formed.

【図5】トリミング方法を示す図FIG. 5 is a diagram showing a trimming method.

【図6】マスク器具と磁器素子の収容状態を示す図FIG. 6 is a diagram showing a state in which a mask device and a porcelain element are housed.

【図7】磁器素子への絶縁膜着膜状態を示す図FIG. 7 is a view showing a state in which an insulating film is deposited on a porcelain element;

【図8】絶縁膜形成後の磁器素子の斜視図FIG. 8 is a perspective view of a porcelain element after an insulating film is formed.

【図9】電極用導体膜形成後の磁器素子の斜視図FIG. 9 is a perspective view of a porcelain element after a conductor film for an electrode is formed.

【図10】抵抗膜着膜用のレジストを付着した磁器素子
の斜視図と、抵抗膜着膜時の素子配列状態を示す図
FIG. 10 is a perspective view of a porcelain element to which a resist for resistive film deposition has been attached, and a diagram showing an element arrangement state at the time of resistive film deposition.

【図11】絶縁膜着膜用のレジストを付着した磁器素子
の斜視図と、絶縁膜着膜時の素子配列状態を示す図
FIG. 11 is a perspective view of a porcelain element to which a resist for depositing an insulating film is attached, and a view showing an element arrangement state when the insulating film is deposited.

【図12】磁器素子の他の形状例を示す図FIG. 12 is a view showing another example of the shape of the porcelain element;

【図13】従来例を示すチップ部品の斜視図及びその縦
断面図
FIG. 13 is a perspective view of a chip component showing a conventional example and a longitudinal sectional view thereof.

【符号の説明】[Explanation of symbols]

1…磁器素子、2…マスク器具、2a…通路、2b…開
口、h1…凹み、3…抵抗膜、LB…レーザ光線、4…
マスク器具、4a…通路、4b…開口、h2…凹み、5
…外装用絶縁膜、6…電極用導体膜、r1,r2…レジ
スト、11…磁器素子、11a…中央部、11b…両端
部。
DESCRIPTION OF SYMBOLS 1 ... Porcelain element, 2 ... Mask apparatus, 2a ... Passage, 2b ... Opening, h1 ... Depression, 3 ... Resistive film, LB ... Laser beam, 4 ...
Mask device, 4a: passage, 4b: opening, h2: recess, 5
... exterior insulating film, 6 ... conductor film for electrode, r1, r2 ... resist, 11 ... porcelain element, 11a ... central part, 11b ... both ends.

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 角柱形状を成す磁器素子の一側面に回路
用導体膜を、磁器素子の両端部にこれと導通する一対の
電極用導体膜をそれぞれ備え、回路用導体膜の電極用導
体膜で挟まれる部分を外装用絶縁膜で被覆したチップ部
品の製造方法において、 エッジに丸みを帯びた角柱形状の磁器素子を得る工程
と、 複数の磁器素子を所定向きで且つ同一側面が表となるよ
うに並べ、その幅方向両側をマスキングした状態で、各
磁器素子の一側面に薄膜法により回路用導体膜を形成す
る工程と、 回路用導体膜形成後の複数の磁器素子を所定向きで且つ
導体膜形成面が表となるように並べ、その長手方向両側
をマスキングした状態で、各磁器素子の導体膜形成面に
薄膜法により外装用絶縁膜を形成する工程と、 外装用絶縁膜形成後の磁器素子の両端部に厚膜法または
薄膜法により電極用導体膜を形成する工程とを具備し
た、 ことを特徴とするチップ部品の製造方法。
A ceramic conductor element having a prismatic shape is provided with a circuit conductor film on one side and a pair of electrode conductor films electrically connected to both sides of the ceramic element at both ends of the ceramic element. In the method for manufacturing a chip component in which the portion sandwiched by the steps is covered with an exterior insulating film, a step of obtaining a porcelain element having a prismatic shape with rounded edges, and a plurality of porcelain elements in a predetermined direction and on the same side face Forming a circuit conductor film on one side surface of each porcelain element by a thin film method in a state where both sides in the width direction are masked, and a plurality of porcelain elements after the formation of the circuit conductor film are oriented in a predetermined direction and A step of forming an exterior insulating film by a thin film method on the conductive film forming surface of each porcelain element in a state in which the conductive film forming surfaces are arranged face-up and masking both longitudinal sides thereof; At both ends of the porcelain element And a step of forming an electrode conductor film by film method or a thin film method, a manufacturing method of a chip component, characterized in that.
【請求項2】 回路用導体膜を形成する工程及び外装用
絶縁膜を形成する工程に、磁器素子を所定向きで並べて
収容可能な通路と、該通路内に収容された磁器素子の着
膜部分を露出可能な開口とを有するマスク器具を用い、
両工程におけるマスキングを該マスク器具によって行
う、 ことを特徴とする請求項1記載のチップ部品の製造方
法。
2. A passage capable of accommodating porcelain elements arranged in a predetermined direction in a step of forming a circuit conductor film and a step of forming an exterior insulation film, and a deposition portion of the porcelain element accommodated in the passage. Using a mask device having an opening capable of exposing
2. The method according to claim 1, wherein masking in both steps is performed by the mask device.
【請求項3】 回路用導体膜を形成する工程及び外装用
絶縁膜を形成する工程におけるマスキングを磁器素子に
付着したレジストによって行う、 ことを特徴とする請求項1記載のチップ部品の製造方
法。
3. The method for manufacturing a chip component according to claim 1, wherein masking in the step of forming the circuit conductor film and the step of forming the exterior insulating film are performed by a resist attached to the porcelain element.
【請求項4】 回路用導体膜を形成する工程及び外装用
絶縁膜を形成する工程における着膜をスパッタリング法
または蒸着法によって行う、 ことを特徴とする請求項1乃至3何れか1項記載のチッ
プ部品の製造方法。
4. The method according to claim 1, wherein the step of forming the circuit conductor film and the step of forming the exterior insulating film are performed by a sputtering method or a vapor deposition method. Manufacturing method of chip parts.
【請求項5】 磁器素子として、外装用絶縁膜形成部分
に相当する中央部の外形が、電極用導体膜形成部分に相
当する両端部の外形よりも小さな形状のものを用いた、 ことを特徴とする請求項1乃至4何れか1項記載のチッ
プ部品の製造方法。
5. A porcelain element having an outer shape at a central portion corresponding to a portion where an exterior insulating film is formed is smaller than an outer shape at both ends corresponding to a portion where a conductor film for an electrode is formed. The method for manufacturing a chip component according to any one of claims 1 to 4, wherein
JP8290442A 1996-10-31 1996-10-31 Manufacture of chip part Withdrawn JPH10135013A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8290442A JPH10135013A (en) 1996-10-31 1996-10-31 Manufacture of chip part

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8290442A JPH10135013A (en) 1996-10-31 1996-10-31 Manufacture of chip part

Publications (1)

Publication Number Publication Date
JPH10135013A true JPH10135013A (en) 1998-05-22

Family

ID=17756092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8290442A Withdrawn JPH10135013A (en) 1996-10-31 1996-10-31 Manufacture of chip part

Country Status (1)

Country Link
JP (1) JPH10135013A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004040592A1 (en) * 2002-10-31 2004-05-13 Rohm Co., Ltd. Chip resistor, process for producing the same, and frame for use therein
CN106328330A (en) * 2015-06-19 2017-01-11 旺诠股份有限公司 Method for manufacturing chip type thin film resistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004040592A1 (en) * 2002-10-31 2004-05-13 Rohm Co., Ltd. Chip resistor, process for producing the same, and frame for use therein
US7612429B2 (en) 2002-10-31 2009-11-03 Rohm Co., Ltd. Chip resistor, process for producing the same, and frame for use therein
CN106328330A (en) * 2015-06-19 2017-01-11 旺诠股份有限公司 Method for manufacturing chip type thin film resistor

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