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JPH10134638A - Transparent conductive film, method for manufacturing the same, substrate with transparent conductive film, and transparent touch panel using the same - Google Patents

Transparent conductive film, method for manufacturing the same, substrate with transparent conductive film, and transparent touch panel using the same

Info

Publication number
JPH10134638A
JPH10134638A JP29143096A JP29143096A JPH10134638A JP H10134638 A JPH10134638 A JP H10134638A JP 29143096 A JP29143096 A JP 29143096A JP 29143096 A JP29143096 A JP 29143096A JP H10134638 A JPH10134638 A JP H10134638A
Authority
JP
Japan
Prior art keywords
conductive film
transparent conductive
compound
indium
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29143096A
Other languages
Japanese (ja)
Inventor
Shigeo Ikuta
茂雄 生田
Shizuo Furuyama
静夫 古山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP29143096A priority Critical patent/JPH10134638A/en
Publication of JPH10134638A publication Critical patent/JPH10134638A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Position Input By Displaying (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

(57)【要約】 【課題】 本発明は、金属化合物を焼成して得られる透
明導電膜及び透明導電膜付き基板に関し、高抵抗でかつ
信頼性に優れた透明導電膜及び透明導電膜付き基板を複
雑な工程を用いずに安価に提供し、視認性に優れ消費電
力の少ない透明タッチパネルを実現することを目的とす
る。 【解決手段】 ガラス基板11上に、少なくともインジ
ウム化合物とスズ化合物とケイ素化合物と溶媒とからな
る透明導電膜形成用組成液を塗布し、塗膜12を形成
し、それを乾燥後、焼成して、インジウム化合物とスズ
化合物、ケイ素化合物の熱分解により厚さ30nm未満
の透明導電膜13を得る。
(57) Abstract: The present invention relates to a transparent conductive film and a substrate with a transparent conductive film obtained by firing a metal compound, and relates to a transparent conductive film and a substrate with a transparent conductive film which are high in resistance and excellent in reliability. It is an object of the present invention to provide a transparent touch panel with excellent visibility and low power consumption without using complicated processes. SOLUTION: On a glass substrate 11, a composition solution for forming a transparent conductive film comprising at least an indium compound, a tin compound, a silicon compound and a solvent is applied to form a coating film 12, which is dried and fired. Then, a transparent conductive film 13 having a thickness of less than 30 nm is obtained by thermal decomposition of an indium compound, a tin compound and a silicon compound.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は金属化合物を焼成し
て得られる導電性金属化合物で構成された透明導電膜と
その製造方法、透明導電膜付き基板およびそれを用いた
透明タッチパネルに関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transparent conductive film composed of a conductive metal compound obtained by firing a metal compound, a method for producing the same, a substrate with a transparent conductive film, and a transparent touch panel using the same. .

【0002】[0002]

【従来の技術】最近の携帯情報端末等の普及に伴い、手
書き入力可能な(アナログ方式)透明タッチパネルの需
要が高まってきている。これは図3に示す原理で、全面
一様な透明電極1,2の両端に電圧を印加して電極面に
電位分布を形成しておき、二枚の電極が接触したときの
電圧を検出してその入力位置を算出する仕組みである。
2. Description of the Related Art With the recent spread of portable information terminals and the like, the demand for (analog type) transparent touch panels capable of handwriting input has been increasing. According to the principle shown in FIG. 3, a voltage is applied to both ends of the transparent electrodes 1 and 2 which are uniform over the entire surface to form a potential distribution on the electrode surface, and the voltage when the two electrodes come into contact is detected. This is a mechanism for calculating the input position.

【0003】携帯機器用の場合、バックライトのない液
晶画面上に透明タッチパネルを配置するために、より高
い全光線透過率をもつものが求められている。また、機
器の消費電力を少なくするため、今よりも高抵抗の透明
導電膜が求められており、加えて、膜が高抵抗になると
入力位置の検出ずれが小さくなるという利点もあるた
め、より高抵抗の透明導電膜が求められている。さら
に、高温や高湿環境にさらされることが多くなるため、
いっそうの耐久性も求められている。
[0003] In the case of a portable device, in order to arrange a transparent touch panel on a liquid crystal screen without a backlight, a device having a higher total light transmittance is required. Further, in order to reduce the power consumption of the device, a transparent conductive film having a higher resistance than now is required.In addition, since the resistance of the film becomes higher, there is an advantage that a detection shift of an input position is reduced. There is a demand for a high-resistance transparent conductive film. In addition, because it is often exposed to high temperature and high humidity environment,
Further durability is also required.

【0004】このような透明タッチパネルの透明電極と
しては、ガラス基板上に酸化インジウム・酸化スズ(以
下、ITOと記す。)や、酸化スズ・酸化アンチモン
(以下、ATOと記す。)等の透明導電膜を形成したも
のが広く用いられている。その製造プロセスは蒸着法、
スパッタリング法、CVD法等のいわゆる薄膜プロセス
が主流であった。
As a transparent electrode of such a transparent touch panel, a transparent conductive material such as indium oxide / tin oxide (hereinafter, referred to as ITO) or tin oxide / antimony oxide (hereinafter, referred to as ATO) is formed on a glass substrate. Those having a film are widely used. The manufacturing process is evaporation,
A so-called thin film process such as a sputtering method and a CVD method has been mainly used.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、これら
の方法は複雑な製造工程を有し、さらに装置が大規模で
あるので、製造コストが高いものとなっていた。また製
造条件も厳しく、大量生産に向かないものであった。
However, these methods have complicated manufacturing steps and a large-scale apparatus, so that the manufacturing cost is high. In addition, the manufacturing conditions were severe and were not suitable for mass production.

【0006】本発明は上記課題を解決するために、全光
線透過率が高く、高抵抗で、かつ高温高湿環境において
透過率や抵抗値の変化が少ない信頼性に優れた透明導電
膜付き基板を複雑な工程を用いずに安価に提供するとと
もに、視認性に優れ消費電力の少ない透明タッチパネル
を実現すること目的をとする。
In order to solve the above-mentioned problems, the present invention provides a substrate with a transparent conductive film having high total light transmittance, high resistance, and little change in transmittance and resistance in a high-temperature and high-humidity environment. It is an object of the present invention to provide a transparent touch panel with excellent visibility and low power consumption, while providing the same at low cost without using a complicated process.

【0007】[0007]

【課題を解決するための手段】前記の課題を解決するた
めに本発明の透明導電膜は、酸化インジウムと酸化スズ
とを主成分とし、シリカを含むことを特徴とする。この
構成によれば、全光線透過率が高く、高抵抗でかつ信頼
性に優れた透明導電膜が得られる。
In order to solve the above-mentioned problems, a transparent conductive film according to the present invention is characterized in that it contains indium oxide and tin oxide as main components and contains silica. According to this configuration, a transparent conductive film having high total light transmittance, high resistance, and excellent reliability can be obtained.

【0008】[0008]

【発明の実施の形態】本発明の請求項1に記載の発明
は、酸化インジウムと酸化スズとを主成分とし、シリカ
を含むものである。シリカを含むことによって透明導電
膜がより緻密になり、高温高湿環境における抵抗値変化
が小さい信頼性に優れた透明導電膜となる。また、シー
ト抵抗を高くすることができる。
BEST MODE FOR CARRYING OUT THE INVENTION The invention according to claim 1 of the present invention contains indium oxide and tin oxide as main components and contains silica. By including silica, the transparent conductive film becomes denser, and a highly reliable transparent conductive film having a small change in resistance in a high-temperature and high-humidity environment is obtained. Further, the sheet resistance can be increased.

【0009】請求項2に記載の発明は、ガラス基板上に
前記の透明導電膜が30nm未満の厚さに形成されてな
り、そのシート抵抗値が1〜20kΩ/□で、かつ全光
線透過率が90%以上としたものである。膜厚が30n
m未満の薄い膜では、ガラス基板と透明導電膜の屈折率
が異なることに起因する光の反射が非常に少なくなり、
膜自体で吸収される光も少なくなる結果、全光線透過率
の高い透明導電膜付き基板となる。また膜を薄くするこ
とでシート抵抗を高くすることができる。
According to a second aspect of the present invention, the transparent conductive film is formed on a glass substrate to a thickness of less than 30 nm, has a sheet resistance of 1 to 20 kΩ / □, and has a total light transmittance. Is 90% or more. Film thickness is 30n
m, the reflection of light due to the difference in the refractive index between the glass substrate and the transparent conductive film becomes very small,
Light absorbed by the film itself is reduced, resulting in a substrate with a transparent conductive film having a high total light transmittance. Further, sheet resistance can be increased by making the film thinner.

【0010】請求項3に記載の発明は、前記の透明導電
膜付き基板を下部パネルとして用いたものである。これ
により、明るくかつ消費電力が少なく、信頼性に優れた
透明タッチパネルを実現することができる。
According to a third aspect of the present invention, the substrate with a transparent conductive film is used as a lower panel. Thus, a transparent touch panel that is bright, consumes little power, and has excellent reliability can be realized.

【0011】請求項4記載の発明は、少なくともインジ
ウム化合物とスズ化合物とケイ素化合物と溶媒とからな
る透明導電膜形成用組成液を、ガラス基板上に塗布し、
乾燥後、焼成することを特徴とする透明導電膜の製造方
法である。これにより、前記金属化合物の熱分解と酸化
物の析出が同時に進行するので、基板上に良好な膜質の
酸化膜が形成される。ケイ素はシリカとなって、酸化イ
ンジウム・酸化スズと混在した状態になっている。こう
して得られた透明導電膜は、高抵抗で、対環境変化の少
ない信頼性に優れたものとなる。
According to a fourth aspect of the present invention, a composition for forming a transparent conductive film comprising at least an indium compound, a tin compound, a silicon compound and a solvent is applied on a glass substrate,
This is a method for producing a transparent conductive film, characterized by firing after drying. As a result, thermal decomposition of the metal compound and deposition of the oxide proceed simultaneously, so that an oxide film having good film quality is formed on the substrate. Silicon becomes silica and is in a state of being mixed with indium oxide and tin oxide. The transparent conductive film thus obtained has high resistance, excellent reliability with little environmental change.

【0012】前記本発明の透明導電膜の製造方法におい
ては、前記インジウム化合物に対するケイ素化合物の配
合割合が、インジウムとケイ素の重量に換算して、イン
ジウム100重量部に対しケイ素が10重量部以下であ
ることが望ましい。
In the method for producing a transparent conductive film according to the present invention, the proportion of the silicon compound to the indium compound is not more than 10 parts by weight of silicon with respect to 100 parts by weight of indium in terms of the weight of indium and silicon. Desirably.

【0013】また、前記インジウム化合物に対するスズ
化合物の配合割合が、インジウムとスズの重量に換算し
て、インジウム100重量部に対しスズ5〜20重量部
であることが望ましい。
Preferably, the mixing ratio of the tin compound to the indium compound is 5 to 20 parts by weight of tin with respect to 100 parts by weight of indium in terms of the weight of indium and tin.

【0014】以下、本発明の実施の形態について、図1
および図2を用いて説明する。 (実施の形態1)図1は本発明の透明導電膜付き基板の
一実施の形態を示す模式断面図である。ガラス基板11
上に、インジウム化合物とスズ化合物とを主成分としシ
リカを含む透明導電膜13が厚さ30nm未満に形成さ
れている。
Hereinafter, an embodiment of the present invention will be described with reference to FIG.
This will be described with reference to FIG. (Embodiment 1) FIG. 1 is a schematic sectional view showing an embodiment of a substrate with a transparent conductive film of the present invention. Glass substrate 11
A transparent conductive film 13 mainly containing an indium compound and a tin compound and containing silica is formed thereon with a thickness of less than 30 nm.

【0015】以下、本発明の透明導電膜付き基板の製造
方法を説明する。まず、図1(a)に示すように洗浄し
たガラス基板11上に、少なくともインジウム化合物と
スズ化合物とケイ素化合物と溶媒とからなる透明導電膜
形成用組成液を塗布し、塗膜12を形成する。次に、図
1(b)に示すようにこの塗膜12を乾燥後、焼成し
て、インジウム化合物とスズ化合物、ケイ素化合物の熱
分解により厚さ30nm未満の透明導電膜13を形成す
る。
Hereinafter, a method for manufacturing a substrate with a transparent conductive film according to the present invention will be described. First, as shown in FIG. 1 (a), a composition for forming a transparent conductive film composed of at least an indium compound, a tin compound, a silicon compound and a solvent is applied on a cleaned glass substrate 11 to form a coating film 12. . Next, as shown in FIG. 1 (b), the coating film 12 is dried and baked to form a transparent conductive film 13 having a thickness of less than 30 nm by thermal decomposition of an indium compound, a tin compound, and a silicon compound.

【0016】ガラス基板11としては、ほうけい酸ガラ
ス、ソーダガラス等ほとんどのガラスを用いることがで
きるが、透明タッチパネル用の透明導電膜付き基板とし
ては安価なソーダガラスを用いることが多い。ソーダガ
ラスを用いる場合は、溶出するナトリウム成分が透明導
電膜の特性に悪影響を及ぼすので、ナトリウム溶出防止
のためのシリカコーティングを施したものを用いるのが
望ましい。ガラス基板11の厚さは任意の厚さで使用可
能であるが、強度、軽量化、価格の点から1〜2mm程
度が望ましい。
Most glass such as borosilicate glass and soda glass can be used as the glass substrate 11, but inexpensive soda glass is often used as a substrate with a transparent conductive film for a transparent touch panel. In the case of using soda glass, since the eluted sodium component adversely affects the characteristics of the transparent conductive film, it is preferable to use a soda glass coated with silica to prevent sodium elution. The thickness of the glass substrate 11 can be any thickness, but is preferably about 1 to 2 mm from the viewpoint of strength, weight reduction, and price.

【0017】インジウム化合物とスズ化合物としては、
無機化合物である塩化物、臭化物、フッ化物、ヨウ化
物、硝酸塩、硫酸塩等、あるいはインジウムやスズを構
造中に含有する有機化合物である有機酸塩、有機錯体、
アルコキシド等を用いることができる。溶媒としては、
用いるインジウム化合物とスズ化合物とを溶解するもの
であればよい。例えば、エタノール、ブタノール等のア
ルコール類、アセトン、メチルエチルケトン等のケトン
類、エトキシエタノール等のエーテル類、酢酸エチル等
の酢酸エステル類、キシレン、トルエン等の芳香族炭化
水素等があげられる。これらの溶媒は単独もしくは混合
して用いられる。
As the indium compound and the tin compound,
Chloride, bromide, fluoride, iodide, nitrate, sulfate, etc., which are inorganic compounds, or organic acid salts, which are organic compounds containing indium or tin in the structure, organic complexes,
Alkoxides and the like can be used. As the solvent,
What is necessary is just to dissolve the indium compound and the tin compound used. Examples thereof include alcohols such as ethanol and butanol, ketones such as acetone and methyl ethyl ketone, ethers such as ethoxyethanol, acetates such as ethyl acetate, and aromatic hydrocarbons such as xylene and toluene. These solvents are used alone or as a mixture.

【0018】ケイ素化合物としては上記溶媒に溶解する
もので、以下の一般式で表されるシラノール、テトラエ
トキシシラン、メチルトリエトキシシラン、ジメチルジ
エトキシシラン等のモノマーや、これらの化合物のダイ
マー、テトラマー、あるいはオリゴマー等や、もしくは
以上の化合物の加水分解生成物や縮合物を用いることが
できる。
The silicon compound is soluble in the above-mentioned solvent, and includes monomers such as silanol, tetraethoxysilane, methyltriethoxysilane and dimethyldiethoxysilane represented by the following general formula, and dimers and tetramers of these compounds. Alternatively, an oligomer or the like, or a hydrolysis product or a condensate of the above compounds can be used.

【0019】[0019]

【化1】 Embedded image

【0020】透明導電膜形成用組成液を塗布する方法と
しては、スピンコート法、ディップ法、ロールコート
法、スプレー法等がある。いずれの方法においても、溶
液の濃度と塗布量を制御することにより、焼成後の透明
導電膜の膜厚が30nm未満となるようにする。
The method for applying the composition for forming a transparent conductive film includes a spin coating method, a dipping method, a roll coating method, and a spraying method. In either method, the thickness of the transparent conductive film after firing is controlled to be less than 30 nm by controlling the concentration of the solution and the amount of application.

【0021】焼成温度はインジウム化合物とスズ化合
物、ケイ素化合物とが十分に熱分解して、酸化物の結晶
が成長する温度以上で、かつガラス基板の軟化が起こら
ない範囲で選べば良い。例えばシリカコートを施したソ
ーダガラスの場合、400〜550℃が好ましい。
The firing temperature may be selected within a range not lower than the temperature at which the indium compound, tin compound and silicon compound are sufficiently thermally decomposed to grow oxide crystals, and the glass substrate is not softened. For example, in the case of soda glass coated with silica, the temperature is preferably 400 to 550 ° C.

【0022】以上のようにして得られた透明導電膜付き
基板において、透明導電膜13の厚さは30nm未満で
あるので、高い全光線透過率と高いシート抵抗を得るこ
とができる。より望ましくは、透明導電膜13の厚さは
10〜25nmとすればよい。
In the substrate with a transparent conductive film obtained as described above, since the thickness of the transparent conductive film 13 is less than 30 nm, a high total light transmittance and a high sheet resistance can be obtained. More preferably, the thickness of the transparent conductive film 13 should be 10 to 25 nm.

【0023】透明導電膜13はシリカを含むことによ
り、高抵抗で、かつ高温高湿に対して特性変化が少なく
信頼性に優れたものになる。特に、インジウム化合物に
対するケイ素化合物の配合割合が、インジウムとケイ素
の重量に換算して、インジウム100重量部に対しケイ
素1〜30重量部とするのが望ましい。
Since the transparent conductive film 13 contains silica, the transparent conductive film 13 has high resistance, has little characteristic change with respect to high temperature and high humidity, and has excellent reliability. In particular, it is desirable that the compounding ratio of the silicon compound to the indium compound is 1 to 30 parts by weight of silicon with respect to 100 parts by weight of indium in terms of the weight of indium and silicon.

【0024】また、インジウム化合物に対するスズ化合
物の配合割合が、インジウムとスズの重量に換算して、
インジウム100重量部に対しスズ5〜20重量部であ
ることが信頼性の点から望ましい。
Further, the mixing ratio of the tin compound to the indium compound is calculated by converting the weight of indium and tin into
From 5 to 20 parts by weight of tin relative to 100 parts by weight of indium, it is desirable from the viewpoint of reliability.

【0025】その際の透明導電膜のシート抵抗は1k〜
20kΩ/□となり、消費電力が小さく、かつ位置検出
ずれの少ないアナログ入力型の透明タッチパネルとして
適している。
At this time, the sheet resistance of the transparent conductive film is 1 k to
It is 20 kΩ / □, which is suitable as an analog input type transparent touch panel with low power consumption and little deviation in position detection.

【0026】(実施の形態2)図2は本発明の透明タッ
チパネルの一実施の形態において、一部分を模式的に示
した断面図である。本発明の透明導電膜22付きガラス
基板21を下部パネル23とする。また、プラスチック
フィルム24上に蒸着やスパッタリング等の方法により
透明導電膜25を設けて上部パネル26とし、これらを
スペーサ27を介して、透明導電膜22と25とが対向
するように重ねてある。
(Embodiment 2) FIG. 2 is a sectional view schematically showing a part of an embodiment of the transparent touch panel of the present invention. The glass substrate 21 with the transparent conductive film 22 of the present invention is referred to as a lower panel 23. Further, a transparent conductive film 25 is provided on the plastic film 24 by a method such as vapor deposition or sputtering to form an upper panel 26, and these are overlapped via a spacer 27 so that the transparent conductive films 22 and 25 face each other.

【0027】前記のように、本発明の透明導電膜付き基
板は高い全光線透過率と高いシート抵抗を有する。その
結果、本発明の透明タッチパネルは明るく、視認性に優
れたものになる。また、消費電力が少なく、位置検出ず
れが少ないという利点を持つ。さらに、高温高湿に対し
て特性変化が少なく信頼性に優れたものになる。
As described above, the substrate with a transparent conductive film of the present invention has high total light transmittance and high sheet resistance. As a result, the transparent touch panel of the present invention is bright and has excellent visibility. In addition, there is an advantage that power consumption is small and displacement of position detection is small. Further, the characteristics are small and the reliability is excellent with respect to high temperature and high humidity.

【0028】[0028]

【実施例】次に、具体的実施例を用いて説明する。Next, the present invention will be described with reference to specific examples.

【0029】(実施例1〜4)硝酸インジウム三水和物
10gをアセチルアセトン10gに溶解させた後、エタ
ノール180gで希釈した。これにシュウ酸スズ0.4
1gを加熱しながら溶解させ、冷却後にテトラエトキシ
シランを添加したものを透明導電膜形成用組成液とし
た。テトラエトキシシランの添加量は0.24g(実施
例1)、0.74g(実施例2)、1.27g(実施例
3)、2.66g(実施例4)とし、ケイ素の割合がそ
れぞれSi/(In+Si)=1,3,5,10%とな
るようにした。この組成液を、表面にシリカコートを施
したソーダガラス基板(厚さ1.1mm)にスピンコー
ト法(回転数1000rpm)で塗布した。この基板を
10分間室温で放置し、さらに70℃で10分間乾燥さ
せた後、大気中530℃で30分間焼成して膜厚約20
nmのITOを主成分とするシリカを含んだ透明導電膜
を形成した。
(Examples 1 to 4) 10 g of indium nitrate trihydrate was dissolved in 10 g of acetylacetone and then diluted with 180 g of ethanol. Add tin oxalate 0.4
1 g was dissolved while heating, and after cooling, tetraethoxysilane was added to obtain a composition for forming a transparent conductive film. The amount of tetraethoxysilane added was 0.24 g (Example 1), 0.74 g (Example 2), 1.27 g (Example 3), 2.66 g (Example 4), and the proportion of silicon was Si. / (In + Si) = 1, 3, 5, 10%. This composition liquid was applied to a soda glass substrate (thickness: 1.1 mm) having a surface coated with silica by spin coating (at 1,000 rpm). The substrate was left at room temperature for 10 minutes, dried at 70 ° C. for 10 minutes, and baked at 530 ° C. in the air for 30 minutes to form a film having a thickness of about 20 μm.
A transparent conductive film containing silica having ITO as a main component was formed.

【0030】(実施例5)実施例1〜4のテトラエトキ
シシランに代えて、市販のシリコンアルコキシドを含む
溶液(東京応化工業(株)商品名MOF P-5931
0)を用いた。ケイ素の添加割合をSi/(In+S
i)=3%にして、実施例1と同様にITOを主成分と
するシリカを含んだ透明導電膜を形成した。
Example 5 A solution containing a commercially available silicon alkoxide instead of tetraethoxysilane of Examples 1 to 4 (trade name: MOF P-5931, Tokyo Ohka Kogyo Co., Ltd.)
0) was used. The addition ratio of silicon is set to Si / (In + S
i) = 3%, and a transparent conductive film containing silica containing ITO as a main component was formed in the same manner as in Example 1.

【0031】(比較例1)硝酸インジウム三水和物10
gをアセチルアセトン10gに溶解させた後、エタノー
ル180gで希釈した。これにシュウ酸スズ0.41g
を加熱しながら溶解させたものを透明導電膜形成用組成
液とした。実施例1〜5と同様のコーティング、焼成条
件で膜厚約20nmのITO透明導電膜を形成した。
Comparative Example 1 Indium nitrate trihydrate 10
g was dissolved in 10 g of acetylacetone and then diluted with 180 g of ethanol. 0.41 g of tin oxalate
Was dissolved while heating to obtain a composition liquid for forming a transparent conductive film. Under the same coating and baking conditions as in Examples 1 to 5, an ITO transparent conductive film having a thickness of about 20 nm was formed.

【0032】以上の実施例の透明導電膜付き基板につい
て、全光線透過率、シート抵抗を測定し、さらに耐湿試
験(60℃、90%RH)を240時間行ない、そのと
きのシート抵抗の変化を測定した。結果を(表1)にま
とめる。全光線透過率はヘーズメーター(日本電色工業
(株)製NDH-300A型)を用いて測定した。シー
ト抵抗の測定には4探針式抵抗率計(油化電子(株)製
ロレスタ)を用いた。
For the substrate with a transparent conductive film of the above embodiment, the total light transmittance and the sheet resistance were measured, and a humidity resistance test (60 ° C., 90% RH) was performed for 240 hours, and the change in the sheet resistance at that time was measured. It was measured. The results are summarized in (Table 1). The total light transmittance was measured using a haze meter (NDH-300A, manufactured by Nippon Denshoku Industries Co., Ltd.). A four-probe resistivity meter (Loresta, manufactured by Yuka Denshi Co., Ltd.) was used to measure the sheet resistance.

【0033】[0033]

【表1】 [Table 1]

【0034】(表1)から、比較例1のITO膜では耐
湿試験後にシート抵抗が60%増加するが、本発明の実
施例のシリカを含んだITO膜はいずれもシート抵抗値
の変化が非常に小さいことがわかる。このように、シリ
カを含む割合を適切に選ぶことにより、耐湿特性を大き
く改善することができる。
From Table 1, it can be seen that the sheet resistance of the ITO film of Comparative Example 1 increased by 60% after the moisture resistance test, but the ITO film containing silica of the present invention showed a very small change in the sheet resistance value. It turns out that it is small. As described above, by appropriately selecting the ratio containing silica, the moisture resistance can be greatly improved.

【0035】なお、実施例と比較例の透明導電膜付き基
板に全光線透過率の差はみられず、シリカを含むことに
より全光線透過率が減少するということはない。また、
シート抵抗についても実施例ではいずれも1k〜20k
Ω/□の範囲にあった。
It should be noted that there is no difference in the total light transmittance between the substrates with the transparent conductive film of the example and the comparative example, and the inclusion of silica does not reduce the total light transmittance. Also,
The sheet resistance is 1 k to 20 k in each of the embodiments.
Ω / □.

【0036】次に実施例と比較例の透明導電膜付き基板
を用いて透明タッチパネルを作製し、それらを比較し
た。
Next, transparent touch panels were produced using the substrates with a transparent conductive film of the example and the comparative example, and they were compared.

【0037】(実施例6〜10)実施例1〜5で作製し
たシリカを含むITO透明導電膜付き基板をそれぞれ下
部パネルに、厚さ175μmのPETフィルム上にIT
O膜をスパッタリング形成したものを上部パネルに用い
て、7cm×8cmのアナログ入力方式の透明タッチパ
ネルを作製した。
(Examples 6 to 10) Each of the substrates with an ITO transparent conductive film containing silica prepared in Examples 1 to 5 was placed on a lower panel and placed on a 175 μm-thick PET film.
A transparent touch panel of 7 cm × 8 cm of an analog input type was manufactured by using an O film formed by sputtering as an upper panel.

【0038】(比較例2)比較例1で作製したITO透
明導電膜付き基板を下部パネルに使用し、実施例6と同
様にして透明タッチパネルを作製した。
Comparative Example 2 A transparent touch panel was manufactured in the same manner as in Example 6, except that the substrate with the ITO transparent conductive film manufactured in Comparative Example 1 was used for the lower panel.

【0039】実施例6〜10と比較例2とで作製した透
明タッチパネルについて評価した結果を(表2)に示
す。
The results of evaluating the transparent touch panels manufactured in Examples 6 to 10 and Comparative Example 2 are shown in Table 2.

【0040】[0040]

【表2】 [Table 2]

【0041】(表2)において、全光線透過率は透明タ
ッチパネル全体としての、すなわち上部・下部パネルを
合わせた値である。消費電力は、同じ制御回路とソフト
ウェアを用いた場合に消費される電力を、比較例を10
0%として比で表してある。実施例の透明タッチパネル
は消費電力が少ないことが、(表2)から明らかであ
る。
In Table 2, the total light transmittance is a value of the entire transparent touch panel, that is, the combined value of the upper and lower panels. The power consumption is the power consumed when the same control circuit and software are used.
It is expressed as a ratio as 0%. It is clear from Table 2 that the transparent touch panel of the example consumes less power.

【0042】[0042]

【発明の効果】以上のように本発明は、インジウム化合
物とスズ化合物とケイ素化合物と溶媒とからなる透明導
電膜形成用組成液を、ガラス基板上に塗布し、乾燥後、
焼成したことにより、高抵抗でかつ信頼性に優れた、酸
化インジウムと酸化スズとを主成分としシリカを含む透
明導電膜を得るものである。
As described above, according to the present invention, a composition for forming a transparent conductive film comprising an indium compound, a tin compound, a silicon compound and a solvent is applied on a glass substrate, dried,
By firing, a transparent conductive film containing indium oxide and tin oxide as main components and containing silica, which is high in resistance and excellent in reliability, is obtained.

【0043】さらに、この透明導電膜を形成したガラス
基板を下部パネルとして用いたことにより、視認性に優
れ、消費電力の少ないものとすることができる。
Further, by using the glass substrate on which the transparent conductive film is formed as the lower panel, the visibility is excellent and the power consumption can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施の形態を模式的に示す断面図FIG. 1 is a sectional view schematically showing an embodiment of the present invention.

【図2】本発明の一実施の形態を模式的に示す断面図FIG. 2 is a sectional view schematically showing one embodiment of the present invention.

【図3】透明タッチパネルの入力方式を示す概念図FIG. 3 is a conceptual diagram showing an input method of a transparent touch panel.

【符号の説明】[Explanation of symbols]

11,21 ガラス基板 12 塗膜 13,22,25 透明導電膜 23 下部パネル 24 プラスチックフィルム 26 上部パネル 27 スペーサ 11, 21 Glass substrate 12 Coating 13, 22, 25 Transparent conductive film 23 Lower panel 24 Plastic film 26 Upper panel 27 Spacer

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 酸化インジウムと酸化スズとを主成分と
し、シリカを含むことを特徴とする透明導電膜。
1. A transparent conductive film comprising indium oxide and tin oxide as main components and silica.
【請求項2】 ガラス基板上に請求項1記載の透明導電
膜が30nm未満の厚さに形成されてなり、そのシート
抵抗値が1〜20kΩ/□で、かつ全光線透過率が90
%以上とした透明導電膜付き基板。
2. The transparent conductive film according to claim 1, which is formed on a glass substrate to a thickness of less than 30 nm, has a sheet resistance of 1 to 20 kΩ / □ and a total light transmittance of 90.
% With transparent conductive film.
【請求項3】 請求項2に記載の透明導電膜付き基板
を、下部パネルとして用いたことを特徴とする透明タッ
チパネル。
3. A transparent touch panel using the substrate with a transparent conductive film according to claim 2 as a lower panel.
【請求項4】 少なくともインジウム化合物とスズ化合
物とケイ素化合物と溶媒とからなる透明導電膜形成用組
成液を、ガラス基板上に塗布し、乾燥後、焼成すること
を特徴とする透明導電膜の製造方法。
4. A method for producing a transparent conductive film, comprising applying a composition for forming a transparent conductive film comprising at least an indium compound, a tin compound, a silicon compound and a solvent onto a glass substrate, drying and firing. Method.
【請求項5】 前記インジウム化合物に対するケイ素化
合物の配合割合が、インジウムとケイ素の重量に換算し
て、インジウム100重量部に対しケイ素が10重量部
以下である請求項4記載の透明導電膜の製造方法。
5. The production of a transparent conductive film according to claim 4, wherein the compounding ratio of the silicon compound to the indium compound is 10 parts by weight or less of silicon with respect to 100 parts by weight of indium in terms of the weight of indium and silicon. Method.
【請求項6】 前記インジウム化合物に対するスズ化合
物の配合割合が、インジウムとスズの重量に換算して、
インジウム100重量部に対しスズ5〜20重量部であ
る請求項4記載の透明導電膜の製造方法。
6. The mixing ratio of the tin compound to the indium compound is calculated in terms of the weight of indium and tin,
The method for producing a transparent conductive film according to claim 4, wherein the amount of tin is 5 to 20 parts by weight with respect to 100 parts by weight of indium.
JP29143096A 1996-11-01 1996-11-01 Transparent conductive film, method for manufacturing the same, substrate with transparent conductive film, and transparent touch panel using the same Pending JPH10134638A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29143096A JPH10134638A (en) 1996-11-01 1996-11-01 Transparent conductive film, method for manufacturing the same, substrate with transparent conductive film, and transparent touch panel using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29143096A JPH10134638A (en) 1996-11-01 1996-11-01 Transparent conductive film, method for manufacturing the same, substrate with transparent conductive film, and transparent touch panel using the same

Publications (1)

Publication Number Publication Date
JPH10134638A true JPH10134638A (en) 1998-05-22

Family

ID=17768778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29143096A Pending JPH10134638A (en) 1996-11-01 1996-11-01 Transparent conductive film, method for manufacturing the same, substrate with transparent conductive film, and transparent touch panel using the same

Country Status (1)

Country Link
JP (1) JPH10134638A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1312568C (en) * 2004-04-15 2007-04-25 中国电子科技集团公司第五十五研究所 Integrated mfg. tech for high reliable touch panel
JP2011018325A (en) * 2009-07-08 2011-01-27 Chi Mei Electronics Corp Touch panel and electronic device including the same
JP2012114041A (en) * 2010-11-26 2012-06-14 Asahi Glass Co Ltd Radio wave transmitting member, dimming element and dimming window material

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1312568C (en) * 2004-04-15 2007-04-25 中国电子科技集团公司第五十五研究所 Integrated mfg. tech for high reliable touch panel
JP2011018325A (en) * 2009-07-08 2011-01-27 Chi Mei Electronics Corp Touch panel and electronic device including the same
JP2012114041A (en) * 2010-11-26 2012-06-14 Asahi Glass Co Ltd Radio wave transmitting member, dimming element and dimming window material

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