JPH10133194A - Color filter, liquid crystal display device and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a color filter of a type in which a color material is fixed by using an ink jet method to form a color filter layer without causing color fringing, a liquid crystal display device using such a color filter, and To provide a method for manufacturing a color filter. SOLUTION: On a first transparent substrate 10, a black matrix 120 composed of a ridge 12 made of a light-shielding conductive film, and a light-transmitting region 19 defined by the ridge 12 are provided.
And a color filter 130 formed from ink injected by an ink-jet method.
Are covered with a common electrode 11 made of a coated ITO film having excellent step coverage. Although the coated ITO film has a large sheet resistance, the ITO film is formed with a ridge 12 made of a light-shielding conductive film.
Supplements.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a color liquid crystal display device used for devices such as a personal computer, a projector and a viewfinder, a color filter usable for the same, and a method of manufacturing the color filter.

[0002]

2. Description of the Related Art In a liquid crystal display device in which liquid crystal sealed between two transparent substrates is driven between a common electrode formed on each transparent substrate and a pixel electrode, for example, in an active matrix type color liquid crystal display device, , Polycrystalline silicon, thin film transistor (Th
in Film Transistor / hereinafter, TFT. ) And MIM
The liquid crystal is driven through a non-linear element such as a (Metal-Insulator-Metal) element. In the color liquid crystal display device, as shown in FIG.
20, red (R), green (G),
Color filter layer 1 composed of three colored layers of blue (B)
Color filter 130 by 3R, 13G, 13B
Q is configured. Three color filter layers 13
A black matrix 120Q is formed between R, 13G, and 13B to shield the gap between colors, and the common electrode 1 is formed on the color filter layers 13R, 13G, and 13B.
A sputtered ITO film of 1Q is formed. on the other hand,
On the transparent substrate 20, a pixel electrode 22 and a driving element such as a TFT 22 for controlling supply of a signal voltage to the pixel electrode 22 are formed.

[0003] Among the components of the color liquid crystal device, when manufacturing the color filter 130Q, the transparent substrate 1 is used.
After a light-shielding film made of a metal such as chromium is formed on the black matrix 120Q, a black matrix 120Q is formed.
And Next, the color filter layers 13R, 13G, 13
B, but the color filter layers 13R, 13G,
Typical forming methods for 13B include a dyeing method and a pigment dispersion method. In the dyeing method, a resist to be a dyed base material is applied,
After patterning, the resist is dyed by dipping in a dye solution. The pigment dispersion method is a method of applying and patterning a colored pigment resist in advance.

However, even if the color filter 130Q is manufactured by using any of the conventional methods, formation of the color filter layers 13R, 13G, and 13B requires three photolithography steps for each color, that is, a black matrix. Including the formation of 120Q, four photolithography steps are required. Therefore, this method requires a great deal of labor and time to manufacture the color filter 130Q, and the equipment cost of the photolithography process becomes enormous.

Therefore, a method of forming the color filter layers 13R, 13G, and 13B by using an ink jet method is disclosed in JP-A-1-217302 and JP-A-7-72325.
And JP-A-7-146406. The ink jet method refers to an ink jet printer widely used for color printing, which uses a color filter 130.
Q is applied to the production of the three color filter layers 1 by ejecting different color inks for each nozzle.
There is an advantage that 3R, 13G, and 13B can be formed simultaneously.

[0006]

However, the formation of the color filter 130Q by the conventional ink-jet method involves, for example, coloring an ink receiving layer made of various resins or the like with three colors of ink. It is impossible to finely process the portion, and there is a problem that color bleeding cannot be avoided.

Accordingly, an object of the present invention is to solve the above-mentioned problems, and to provide a color filter of a type in which a color material is fixed using an ink jet method to form a color filter layer, without causing color fringing. To provide. Another object of the present invention is to provide a liquid crystal display device using such a color filter and a method for manufacturing a color filter.

[0008]

According to the present invention, there is provided a color filter according to the present invention, comprising: a ridge portion formed of a linear light-shielding conductive film for forming a colored region on a substrate; A color material fixed therein, and a conductive transparent coating film formed on the substrate so as to cover the color material and the protrusion.

In the present invention, since the color material is fixed in the colored area defined by the ridge on the substrate, the ridge is formed when the color material (ink) is injected by the ink jet method. Function as Therefore, since the color material does not protrude from the translucent region, a color filter without color bleeding can be manufactured. In addition, since the ridge portion is made of a light-shielding conductive film, it can be used as it is as a black matrix. Here, as long as the ridge is used as a dam for the color material, a predetermined height is required. Therefore, if an ITO film or the like is formed as a common electrode on the surface of the color filter by a sputtering method after the color filter is formed, the unevenness due to the ridge portion appears on the surface of the common electrode as it is. However, in the present invention, the common electrode formed on the surface of the color filter is formed of a conductive transparent coating film formed by a coating film forming method. A common electrode formed by such a coating film forming method has excellent step coverage and flatness,
Even if a ridge having a height sufficient to function as a dam is formed, a common electrode having a flat surface can be formed. Therefore, a liquid crystal display device having a small cell gap and high display quality can be realized. However, the conductive transparent coating film has high sheet resistance as compared with a conductive film formed by a sputtering method, instead of having excellent step coverage. Nevertheless, in the present invention, since the light-shielding conductive film is formed below the conductive transparent coating film,
When the conductive transparent coating film is used as the common electrode, the high sheet resistance can be sufficiently compensated.

In the present invention, it is preferable that a silicon oxide film is formed below the color material. With such a configuration, the base when the color material is applied by the inkjet method is a hydrophilic silicon oxide film. In contrast, a doped semiconductor film used as a ridge or a metal film whose surface is covered with a conductive water-repellent film is water-repellent. Therefore, it is possible to reliably prevent the water-based color material from protruding from the light-transmitting region defined by the protruding ridges, so that the color bleeding of the color filter can be more reliably prevented.

In the present invention, for example, a coated ITO film can be used as the conductive transparent coating film.

In the present invention, at least a part of the ridge may be formed of a metal film or the ridge may be formed of a doped semiconductor film.

The first substrate on which the color filter having such a configuration is formed is disposed opposite to the second substrate on which the pixel electrode is formed in a region corresponding to the color region with a predetermined gap therebetween. A liquid crystal is filled in the gaps between these substrates to constitute a liquid crystal display device. In this case, the protrusions are used as a black matrix, and the conductive transparent coating film is used as a common electrode for driving the liquid crystal layer between the pixel electrodes.

In the method for manufacturing a color filter according to the present invention, a first step of forming a plurality of ridges made of a linear light-shielding conductive film on a transparent substrate, and forming a plurality of ridges by the ridges. After injecting the color material into the translucent region using an inkjet method, drying and fixing the color material, and the conductive transparent coating on the surface side of the transparent substrate so as to cover at least the color material. And a third step of forming a film.

In this case, in the third step, a precursor for forming the conductive transparent coating film is coated so as to cover at least the color material, or to cover both the color material and the protrusion. After forming a film on the surface side of the transparent substrate, a chemical reaction such as heat treatment is performed on the precursor to form the conductive transparent coating film.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A typical embodiment of the present invention will be described with reference to the drawings.

FIG. 1 is a schematic configuration diagram of a liquid crystal display device provided with a color filter to which the present invention is applied, and FIG. 2 is a schematic sectional view of the liquid crystal display device. In the description of the color filter and the liquid crystal display device according to this embodiment, portions having functions common to those of the conventional color filter and the liquid crystal display device shown in FIG.
Avoid duplicate explanations.

The liquid crystal display device 1 shown in FIG. 1 is an active matrix type color liquid crystal display device, and includes a first transparent substrate 10 made of a fused quartz substrate, non-alkali glass or the like.
In addition, the liquid crystal 30 sealed between the second transparent substrates 20 is driven between the common electrode 11 formed on each of the transparent substrates 10 and 20 and the pixel electrode 21. In the liquid crystal display device 1, the liquid crystal 30 is driven on the second transparent substrate 20 via the TFT 22 made of polycrystalline silicon or the like.

In this liquid crystal display device 1, as shown in FIG. 2, a silicon oxide film 16 is formed on a first transparent substrate 10 as a base layer. This silicon oxide film 16
On the surface of the substrate, a lattice-shaped ridge 12 made of a plurality of linearly-patterned P-type doped semiconductor films (light-shielding conductive films), and a light-transmitting region partitioned by these ridges 12 Color filter layers 13R, 13G, and 13B made of three color inks (color materials) of red (R), green (G), and blue (B) fixed in 19 (colored area) are formed. Color filter layers 13R, 13G, 13
B, the color filter 1 is applied to the first transparent substrate 10.
30 are configured.

The semiconductor film forming the ridge 12 has a thickness of 1 μm or more and has a light shielding property against visible light.
Because it looks black, the three color filter layers 13
It is used as a black matrix 120 for shielding a gap between colors between R, 13G, and 13B. The semiconductor film constituting the ridge 12 may be any thickness as long as it can block visible light. However, in the present embodiment, as described later, when the ink for forming the color filter layers 13R, 13G, and 13B is injected into the light-transmitting region 19 by the inkjet method, the ink forms the ridge 12 with the light-transmitting region. The thickness is set to about 1 μm to 5 μm because it is also used as a dam for preventing the water from flowing out of the pipe 19.

An ITO film used as a common electrode 11 covering the color filter layers 13R, 13G, 13B and the ridges 12 is formed on the entire surface side of the first transparent substrate 10. This ITO film is a conductive transparent coating film (coated ITO film) formed by a coating film forming method, unlike the related art.

On the second transparent substrate 20, an IT formed in a region corresponding to the light transmitting region 19 of the first transparent substrate 10 is formed.
A pixel electrode 21 made of an O film and a TFT 22 (drive element) for controlling supply of a signal voltage to the pixel electrode 21 are formed. The TFT 22 may have a known structure. Accordingly, detailed description of the TFT 22 is omitted, but the TFT 22 is formed by forming a base protective film 23 made of a silicon oxide film on the surface side of the second transparent substrate 20, and then forming a TFT on the surface of the base protective film 23. An amorphous silicon film is formed, and the amorphous silicon film is polycrystallized by performing a laser annealing, a rapid heating process, or the like.

In the method of manufacturing the liquid crystal display device 1 having such a configuration, the color filter 13 is provided on the first transparent substrate 10.
0, black matrix 120, and common electrode 11
The steps up to the formation of are described with reference to FIG.

FIG. 3 is a process sectional view showing a method of manufacturing a black matrix integrated color filter.

[Base Film Forming Step] First, as shown in FIG. 3A, PECVD (Pl
A silicon oxide film 16 having a film thickness of about 3600 angstroms is formed by using an asma-enhanced chemical vapor deposition (Asma-Enhanced Chemical Vapor Deposition) method. The conditions of PECVD at this time are as follows: a raw material gas is SiH ₄ / N ₂ O, a parallel plate type PECVD apparatus is used, an RF frequency is 13.56 MHz, and an RF power is 90.
0 W, the distance between the electrodes is 24 mm, the pressure is 1.5 Torr, the flow rate of the SiH ₄ gas is 250 sccm, the flow rate of the N ₂ O gas is 7000 sccm, the deposition rate is 1200 Å / min, and the deposition time is 3 minutes. Note that the thickness of the silicon oxide film 16 can be in the range of about 2000 Å to 2 μm.

[Protrusion Forming Step / First Step] Next, after forming the doped semiconductor film 121 on the entire surface of the silicon oxide film 16, the protruding part is formed on the surface of the doped semiconductor film 121 by using a known photolithography technique. A resist mask 41 for forming is formed. In forming the doped semiconductor film 121, a doped amorphous silicon film having a thickness of about 3 μm is formed by using a PECVD method, and is subjected to laser annealing or rapid heating to be polycrystallized.
Alternatively, N-type or P-type impurity ions are implanted into the amorphous silicon film to form a doped silicon film, and then crystallization proceeds. PECV at this time
The condition of D is, for example, that the raw material gas is SiH ₄ / A
r, using a parallel plate type PECVD apparatus, RF frequency 13.56 MHz, RF power 600 W, electrode spacing 12
mm, pressure 1.0 Torr, flow rate of SiH ₄ gas 500 sccm, flow rate of B ₂ H ₆ gas diluted 1% in hydrogen 500 sccm, flow rate of Ar gas 7000 sccm, deposition rate 1800 Å / min.

After that, the doped semiconductor film 121 is etched to form the ridges 12 while leaving the doped semiconductor film 121 in a lattice shape, as shown in FIG. 3B. As a result, the light transmitting region 19 is defined by the ridges 12. After that, the photoresist 41 is removed.

At this time, a CDE (Chemical Dry Etching) method is used for etching the doped semiconductor film 121,
Tapered etching may be performed. At this time, the CDE is performed under the conditions of an etching gas of CF ₄ / O ₄ , a microwave plasma etching apparatus, and a frequency of 2.54.
GHz, microwave power 700W, pressure 30Pa, CF ₄
The gas flow rate is 990 sccm, the O ₂ gas flow rate is 90 sccm, the etching rate is 2500 Å / min, and the etching time is 12 minutes. When etching is performed under these conditions, the ridge 12 has a taper angle of 60 ° as shown in FIG.
The shape becomes a taper-etched shape of about 80 °. When the taper etching is performed in this manner, the light-transmitting region 19 defined by the ridges 12 has a shape whose width is increased from the bottom surface toward the opening. Therefore, there is an advantage that it is easy to inject the inks 51R, 51G, and 51B into the translucent region 19 when injecting the ink in the color material fixing step described later.

In the step shown in FIG. 3B, when the doped semiconductor film 121 is etched to form the ridge 12, not only the doped semiconductor film 121 but also the underlying silicon oxide film 16 is etched. May be. In this case, as shown in FIG. 4B, the protruding portion 12 becomes relatively high by the depth of the etching. Therefore, when the ink is injected in the color material fixing step described later, there is an advantage that the inks 51R, 51G, and 51B injected into the translucent area 19 defined by the ridges 12 are less likely to protrude.

Further, in the step shown in FIG. 3B, when the doped semiconductor film 121 is etched to form the ridge portion 12, as shown in FIG.
In addition to the silicon oxide film 21 and the silicon oxide film 16, the surface of the first transparent substrate 10 is also etched to make the ridges 12 relatively higher, and when injecting ink in a color material fixing step described later, The inks 51 </ b> R, 51 </ b> G, and 51 </ b> B injected into the light-transmitting area 19 defined by the ridges 12 may be harder to protrude therefrom. Such a configuration is advantageous particularly when the ridge 12 is formed of a doped silicon film. That is, the amorphous silicon film has a property that it is easily peeled off when it is thick. An amorphous silicon film requires a relatively long time for film formation. However, when forming the ridge portion 12,
If the underlying silicon oxide film 16 and the first transparent substrate 10 are also etched, the doped silicon film (amorphous silicon film) may be thinned by the amount by which the ridge 12 can be made relatively high. . For example, 4 μm to 7 μ
When the silicon oxide film 16 and the first transparent substrate 10 are etched by 3 μm to 6 μm in total to form the ridge 12 of m, the thickness of the amorphous silicon film can be suppressed to about 1 μm. If the film thickness is large, peeling of the amorphous silicon film can be prevented, and the film formation time can be shortened. Moreover, the doped silicon film is 1 μm.
m, it sufficiently fulfills the light-shielding function.

[Color Material Fixing Step / Second Step] Next, FIG.
As shown in (C), each of the R, G, and B inks 51 </ b> R,
51G and 51B are respectively injected. In this case, a general inkjet printer can be used, but the R, G, and B nozzles 52R, 52B of the printer head 50 are used.
The distance between G and 52B is adjusted so as to match the distance between the centers of the adjacent light transmitting regions 19.

That is, as shown in FIG. 5, the planar structure of the light-transmitting region 19 defined by the ridge 12 is enlarged, and the size of the light-transmitting region 19 is, for example, about 250 μm × 80 μm. The width of 12 is about 5 μm to 20 μm. Therefore, each nozzle 52R, 5R
The interval between 2G and 52B may be about 85 μm to 100 μm. When the resolution of the ink jet printer used is 360 dpi, the diameter of one dot of ink is 70 μm.
１００100 μm, the inks 51R, 51G,
51B can be injected three dots at a time. here,
The volume occupied by one dot of ink is usually determined, but the plane size of the light-transmitting region 19 is, for example, 25
It is determined to be 0 μm × 80 μm. Therefore, the height of the ridge portion 12 and the number of ink injection dots are appropriately set to optimal conditions so that the amount of ink is not too large or too small.
However, if the inks 51R, 51G, and 51B protrude from the ridges 12, color bleeding occurs in the color filter 130. In this embodiment, the ridges 12 are formed to be slightly thicker to several μm, and the inks 51R, 51G are formed. , 51B are prevented from protruding.

The types of ink that can be used here are, for example, those shown in Table 1.

[0034]

[Table 1]

As shown in Table 1, any of a pigment-based ink and a dye-based ink may be used.
In addition to satisfying the functions when the ink becomes 3R, 13G, and 13B, it is necessary to have characteristics of a viscosity of 10 cps or less and a surface tension of about 30 dyne / cm so as to be applicable to an ink jet printer. The "wetting agent" and "penetrating agent" in Table 1 are contained to reduce the surface tension of the ink and increase the wettability.

As shown in FIG.
After the injection of 1G and 51B, the first transparent substrate 1
0 is heated in an oven, and the inks 51R and 51R are heated.
G and 51B are dried and fixed. The conditions are an atmosphere in the air, a temperature of 110 ° C., and a time of 10 minutes. In addition,
The atmosphere may be a nitrogen atmosphere, and the temperature is 80 ° C to 140 ° C.
The degree and time may be about 10 minutes to 1 hour. When the inks 51R, 51G, and 51B are dried through this process, FIG.
As shown in (D), color filter layers 13R, 13G, and 13B of three colors whose surfaces are flattened are formed.

[Step of forming conductive transparent coating film / third step]
Next, as shown in FIG.
R, 13G, 13B and the first
A common electrode 11 made of an applied ITO film is applied and formed on the entire surface side of the transparent substrate 10.

In this coating film formation, various liquid or paste-like coating materials (precursors of the transparent conductive film) can be used. Among these coating materials, a dipping method and a spin coating method can be used if they are liquid, and a screen printing method and the like can be used if they are pasty. The coating material used in the present embodiment is a liquid material in which organic indium and organic tin are mixed in xylol at a ratio of 97: 3 to 8% (for example, trade name: Adeka ITO coating film manufactured by Asahi Denka Kogyo Co., Ltd.). / ITO-1
03L), and can be applied to the entire front surface side of the first transparent substrate 10 by spin coating. Here, as the coating material,
The ratio of organic indium to organic tin is from 99/1 to 90 /
Those in the range of up to 10 can be used.

In the present embodiment, the liquid or paste-like coating film applied to the front side of the first transparent substrate 10 is subjected to heat treatment in a heat treatment device after drying and removing the solvent.
At this time, as the heat treatment conditions, for example, a temperature of 250
After performing a first heat treatment (firing / chemical reaction) for 30 minutes to 60 minutes in air or an oxygen-containing atmosphere at a temperature of 200 ° C. to 500 ° C., preferably 250 ° C. to 400 ° C.
As described above, the second heat treatment is preferably performed in a hydrogen-containing non-oxidizing atmosphere at 200 ° C. to 350 ° C. for 30 minutes to 60 minutes. In any case, the processing temperature in the second heat treatment is set lower than the processing temperature in the first heat treatment so that the film stabilized by the first heat treatment does not deteriorate. When such heat treatment is performed, the organic components are removed, and the coating film is a mixed film of indium oxide and tin oxide (coated ITO).
Film). As a result, the film thickness is coated ITO film of about 500 angstroms to about 2000 angstroms has a sheet resistance of ^{10 2 Ω / □ ~10 4 Ω} / □ and a light transmittance of becomes 90% or more, constitutes a common electrode 11 be able to.

Thereafter, the first transparent substrate 10 is kept in a non-oxidizing atmosphere subjected to the second heat treatment or another non-oxidizing atmosphere until the substrate temperature becomes 200 ° C. or lower, and the substrate temperature is lowered. After the temperature reaches 200 ° C. or lower, the first transparent substrate 10 is taken out of the heat treatment apparatus into the atmosphere. If the first transparent substrate 10 is exposed to the air after its temperature has dropped to about 200 ° C. or lower, the film whose resistance has been reduced by the reduction in the second heat treatment in a hydrogen-containing atmosphere is oxidized again. Therefore, it is possible to obtain an applied ITO film having a small sheet resistance.

In this manner, on the front side of the first transparent substrate 10, a common color filter 130 composed of the color filter layers 13R, 13G, and 13B, a black matrix 120 composed of the ridges 12, and a coated ITO film is formed. The electrode 11 is formed. Thereafter, as shown in FIG. 2, the first transparent substrate 10 and the second transparent substrate 20 on which the TFTs 22 and the pixel electrodes 21 are already formed are bonded together with a small gap (cell gap) therebetween. When the liquid crystal 30 is injected into the liquid crystal display device 1, the liquid crystal display device 1 is completed.

The color filter 130 and the method of manufacturing the same according to the embodiment described above have the following advantages.

(1) Since the ink-jet method was used to manufacture the color filter 130, and the distance between the nozzles 52R, 52G, and 52B of the printer head 50 was made equal to the distance between the centers of the adjacent light-transmitting regions 19, Translucent area 1
9, the inks 51R, 51G, 51B can be injected at high speed. Therefore, the color filter 130
In view of the time required for the entire manufacturing, the time can be significantly reduced as compared with the conventional method requiring four photolithography steps. Also, the completed color filter 13
In the case where there is a so-called defect where the inks 51R, 51G, and 51B are not injected into the ink 51R, if the ink jet method is used, the inks 51R, 51G are re-applied only to that portion.
G and 51B can be implanted, and defects can be repaired. Further, the color filter layers 13R,
Regarding the formation of 3G and 13B, the equipment to be used only needs to be an ink jet printer and an oven for drying ink, so that equipment costs can be reduced. That is, according to the present embodiment, it is possible to make the most of the great advantage in manufacturing when the ink jet method is applied to the manufacture of the color filter 130.

(2) When the inks 51R, 51G, and 51B are injected, the ridges 12 form a so-called ink storage tank, and the ink is injected into the ink storage tank. The inks 51R, 51G, 51
B does not protrude into other translucent regions 19. Therefore, ink 5
1R, 51G, 51B (color filter layer 13R, 1R
3G and 13B) are each confined in the predetermined light-transmitting region 19, so that the color filter 130 without color blur can be realized. Therefore, the liquid crystal display device 1 with high display quality can be realized.

(3) The ridges 12 are used to reliably prevent the inks 51R, 51G, and 51B from protruding when the ink is injected.
Even if the height is increased, the surface side is a coated ITO film (common electrode 1) which is a conductive transparent coating film having excellent step coverage and flatness.
Covered with 1). Therefore, the surface of the common electrode 11 has no irregularities due to the ridges 12. Therefore, the present invention can be applied to the liquid crystal display device 1 having a cell gap of 5 μm or less.

(4) However, the conductive transparent coating film (coated ITO)
Instead of being excellent in step coverage, the film has higher sheet resistance than an ITO film formed by a sputtering method. Nevertheless, in the present embodiment, since the ridge 12 made of a doped semiconductor film (light-shielding conductive film) is formed below the common electrode 11 made of a conductive transparent coating film, the coated ITO film is used as the common electrode 11. When used, the high sheet resistance can be sufficiently compensated.

(5) Most of the components of the inks 51R, 51G, and 51B are water as a solvent.
The base (bottom side) when G and 51B are injected by the inkjet method is a hydrophilic silicon oxide film 16. On the other hand, the doped silicon film used as the ridge 12 is water repellent. Therefore, the inks 51R, 51G, and 51B easily enter the translucent area 19 defined by the protruding ridges 12, and once entered, are kept as they are, and the inks 51R, 51G, and 51B are retained in the other translucent areas 19. It does not protrude. Therefore, the color blur of the color filter 130 can be more reliably prevented.

(6) Color filter layers 13R, 13G,
13B is covered with the ridge 12 made of a doped semiconductor film and the common electrode 11 made of a coated ITO film, and is isolated from the outside air.
Discoloration of 3B can be prevented.

[Other Embodiments] The ridges 12
As for (2), a metal film (conductive light-shielding film) such as a chromium film may be used in whole or in part. Since such a metal film also has a light-shielding property with respect to visible light, a black matrix 1 for shielding a gap between colors between the three color filter layers 13R, 13G, and 13B.
20 can be used.

Here, the arrangement of the color filters 130 includes a vertical stripe type, a horizontal stripe type, a mosaic type, a triangle type (with color rotation), a triangle type as shown in FIGS. There are five methods (no color rotation), and the color filter of the present invention can realize each of these five methods. Specifically, FIG.
As shown in (E), the ridges in the present invention are formed as a ridge 12A having a shape extending long in the vertical direction, a ridge 12B having a shape extending long in the horizontal direction, and a ridge 12 having a lattice shape.
C, (the ridges 12D in which the vertical direction extends alternately every horizontal row,
R, G, and B color materials may be fixed to each of the regions defined by the ridges 12E.

In the above embodiment, the inks 51R, 5R
In order to prevent the protrusions 1G and 51B from protruding and to enhance the adhesion of the plurality of ridges 12 to the first transparent substrate 10, a silicon oxide film is provided between the first transparent substrate 10 and the ridges 12. Although 16 is provided, the silicon oxide film 16 can be omitted.

As shown in FIG. 7A, as a pixel switching drive element formed on the first transparent substrate 20, an MIM element 22A may be formed instead of a TFT. In this case, the first transparent substrate 10
Of the plurality of common electrodes 1 extending in a strip shape in a direction orthogonal to the signal lines S (or scanning lines) formed on the transparent substrate 20 of FIG.
1A must be formed, and a common electrode cannot be formed on the entire surface of the first transparent substrate 10. Accordingly, in this case, the lower side of each of the common electrodes 11A extending in a band shape is provided as shown in FIG.
As shown in (B), after forming a ridge 12F (light-shielding conductive film / black matrix 120F) that is electrically separated for each common electrode by a gap 126F, the ridge 1
The color filters 130 are formed by injecting the inks 51R, 51G, and 51B of each color into each of the light-transmitting regions 19 defined by 2F by an inkjet method.

On the other hand, as shown in FIG.
When a simple matrix type liquid crystal display device is configured, a plurality of common electrodes 11B extending in a strip shape in a direction orthogonal to the pixel electrodes 21A formed in a strip shape on the second transparent substrate 20 are formed on the first transparent substrate. 10 must be formed,
The common electrode cannot be formed on the entire surface of the first transparent substrate 10. Therefore, also in this case, each of the strip-shaped common electrodes 11
As shown in FIG. 8B, a gap 126G
Ridges 12 electrically separated for each common electrode by
After forming the G (light-shielding conductive film / black matrix 120G), the ink 51 of each color is formed in each light-transmitting area 19 defined by the ridge 12G by the ink jet method.
R, 51G and 51B are injected and the color filter 130
To form

The specific numerical values such as the film thickness of each film constituting the color filter 130 and the liquid crystal display device 1 and the dimensions of the ridges 12 or the specific manufacturing conditions in each manufacturing process are as described above. It is needless to say that the design can be appropriately changed without being limited to the embodiment. Further, the liquid crystal display device 1 of the present invention includes, for example, a personal computer,
The present invention can be applied to devices such as a projector and a viewfinder, and of course, there is no limitation in its use.

[0055]

As described above, in the color filter according to the present invention, a plurality of ridges made of a linear light-shielding conductive film formed on a transparent substrate, and a plurality of ridges are formed by the ridges. And a conductive transparent coating film formed on the transparent substrate so as to cover the color material and the ridge. Therefore, according to the present invention, when the color material (ink) is injected into each light-transmitting area by the ink jet method, the ridge functions as a dam, and the color material does not protrude from the light-transmitting area. No color filter can be manufactured. In addition, since the ridge portion is made of a light-shielding conductive film, it can be used as it is as a black matrix. further,
Even if the ridge is thick enough to function as a dam, a common electrode consisting of a conductive transparent coating film with excellent step coverage is formed on the surface, and the surface is flattened. A liquid crystal display device which is small and has high display quality can be realized. Moreover, since the light-shielding conductive film is formed below the conductive transparent coating film, the high sheet resistance can be sufficiently compensated for when the conductive transparent coating film is used as the common electrode.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of a liquid crystal display device including a color filter.

FIG. 2 is a schematic sectional view of a liquid crystal display device to which the present invention is applied.

FIGS. 3A to 3E are process cross-sectional views illustrating a method of manufacturing a black matrix-integrated color filter to which the present invention is applied.

FIGS. 4A to 4C are illustrations of a ridge formed on a color filter according to another embodiment of the present invention.

FIG. 5 is an explanatory diagram showing a state of ink injection into each light-transmitting region defined by a ridge in a process of manufacturing a black matrix integrated color filter to which the present invention is applied.

FIGS. 6A to 6E are explanatory diagrams each showing an arrangement of a color filter layer included in a color filter according to another embodiment of the present invention.

7A is an explanatory view when the present invention is applied to a liquid crystal display device using an MIM as a driving element, and FIG. 7B is a projection portion used when forming a color filter in the liquid crystal display device. It is explanatory drawing which shows the planar shape of.

8A is an explanatory view when the present invention is applied to a simple matrix type liquid crystal display device, and FIG. 8B is a plan view of a ridge portion used when forming a color filter in the liquid crystal display device. FIG.

FIG. 9 is a schematic sectional view of a conventional liquid crystal display device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Liquid crystal display device 10 1st transparent substrate 11, 11A, 11B Common electrode 12, 12A-12G Ridge part 13R, 13G, 13B Color filter layer 16 Silicon oxide film 19 Transmissive area 20 2nd transparent substrate 21 Pixel electrode Reference Signs List 22 TFT 22A MIM element 23 Underlayer protective film 30 Liquid crystal 41 Resist mask 50 Printer head 51R, 51G, 51B Ink 52R, 52G, 52B Nozzle 120, 120F, 120G Black matrix 121 Chromium film 120F, 120G Protrusion gap 130 Color filter S signal line

Claims (8)

[Claims] 1. A ridge made of a linear light-shielding conductive film for forming a colored region on a substrate, a color material fixed in the colored region, and covering the color material and the ridge. And a conductive transparent coating film formed by coating on the surface of the substrate as described above. 2. The color filter according to claim 1, wherein an underlayer made of a silicon oxide film is formed below the color material. 3. The color filter according to claim 1, wherein the ridge portion is formed of a coated ITO film. 4. The method according to claim 1, wherein
The color filter according to claim 1, wherein the protruding portions are formed of a doped semiconductor film into which impurities are introduced. 5. The method according to claim 1, wherein
A color filter, wherein the protrusion has a metal film. 6. A first substrate provided with the color filter defined in any one of claims 1 to 5, a second substrate having a pixel electrode formed in a region corresponding to the colored region,
A liquid crystal layer filled in a gap between the second substrate and the first substrate, wherein the ridge portion is used as a black matrix, and the conductive transparent coating film is provided between the second transparent substrate and the pixel electrode. A liquid crystal display device used as a common electrode for driving the liquid crystal layer. 7. A first step of forming a plurality of ridges made of a linear light-shielding conductive film on a transparent substrate, and using an ink jet method in a light-transmitting region defined by the ridges. A second step of injecting and drying the color material and fixing the color material, and a third step of forming a conductive transparent coating film on the surface side of the transparent substrate so as to cover at least the color material. A method for producing a color filter, comprising: 8. The method according to claim 7, wherein in the third step,
After applying a precursor for forming the conductive transparent coating film on the surface side of the transparent substrate so as to cover at least the color material and forming a film, a chemical reaction occurs in the precursor to form the conductive transparent coating. A method for producing a color filter, comprising forming a film.