JPH10107305A - Manufacturing method of photovoltaic device - Google Patents
Manufacturing method of photovoltaic deviceInfo
- Publication number
- JPH10107305A JPH10107305A JP8257073A JP25707396A JPH10107305A JP H10107305 A JPH10107305 A JP H10107305A JP 8257073 A JP8257073 A JP 8257073A JP 25707396 A JP25707396 A JP 25707396A JP H10107305 A JPH10107305 A JP H10107305A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- region
- electrode layer
- electrode
- power generation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 238000010248 power generation Methods 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- -1 polyethylene naphthalate Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、光起電力装置の製
造方法に関する。The present invention relates to a method for manufacturing a photovoltaic device.
【０００２】[0002]
【従来の技術】従来の光起電力装置の製造方法が、特開
昭６０−３１６４号公報に開示されている。この方法に
より製造される光起電力装置は、絶縁表面を有する基板
上に、第１電極層、半導体光活性層及び第２電極層の積
層体からなる複数の発電領域が直列接続して配列され、
これら配列された発電領域の一端、他端に隣接配置され
これらから出力を取り出すための一端、他端出力領域が
配置されている。2. Description of the Related Art A conventional method for manufacturing a photovoltaic device is disclosed in Japanese Patent Application Laid-Open No. Sho 60-3164. In a photovoltaic device manufactured by this method, a plurality of power generation regions each including a stacked body of a first electrode layer, a semiconductor photoactive layer, and a second electrode layer are arranged in series on a substrate having an insulating surface. ,
One end and the other end output regions are arranged adjacent to one end and the other end of the arranged power generation regions to take out the output therefrom.
【０００３】そして、この製造方法においては、第１電
極層を構成する第１電極膜を基板上の略全面に形成した
後、基板の全外周の内側に分割溝を形成し、第１電極層
及び両出力領域に対応した層に分離している。このよう
に、基板の全外周に分割溝を設けることにより、基板の
側面又は裏面に不所望に付着した第１電極膜を通じて各
発電領域の第１電極層が導通して、特性不良となること
を防止している。In this manufacturing method, after a first electrode film constituting the first electrode layer is formed on substantially the entire surface of the substrate, a dividing groove is formed inside the entire outer periphery of the substrate, and the first electrode layer is formed. And layers corresponding to both output regions. By providing the division grooves on the entire outer periphery of the substrate as described above, the first electrode layers of the respective power generation regions are conducted through the first electrode film undesirably attached to the side surface or the back surface of the substrate, resulting in poor characteristics. Has been prevented.
【０００４】[0004]
【発明が解決しようとする課題】この従来の製造方法に
おいては、基板の全外周に分割溝を設けているので、発
電に寄与しない非発電領域の面積が増大し、（発電領域
の面積）／（基板面積）で示される有効面積率が小さく
なっていた。本発明はこのような問題点を解決するため
に成されたものであり、特性不良がなく、有効面積率の
大きな光起電力装置が得られる製造方法を提供すること
を目的とする。In this conventional manufacturing method, since the dividing groove is provided on the entire outer periphery of the substrate, the area of the non-power-generating region which does not contribute to the power generation increases, and the area of (the area of the power-generating region) / The effective area ratio indicated by (substrate area) was small. The present invention has been made to solve such a problem, and an object of the present invention is to provide a manufacturing method capable of obtaining a photovoltaic device without a characteristic defect and having a large effective area ratio.
【０００５】[0005]
【課題を解決するための手段】本発明の光起電力装置の
製造方法の主要な構成は、絶縁表面を有する基板上に第
１電極層、半導体光活性層及び第２電極層の積層体から
なる発電領域を形成すると共に、この発電領域からの出
力を取り出すための出力領域を形成し、前記発電領域が
基板有効部に配置され、前記出力領域が前記基板有効部
及び前記基板有効部に隣接する基板無効部に渡って配置
される光起電力装置の製造方法であって、前記絶縁表面
上の略全面に前記第１、第２電極層の少なくとも一方の
電極層を構成する電極膜を成膜後、前記少なくとも一方
の電極層に分割すると共に、前記出力領域より光起電力
装置の電気特性測定後、前記基板無効部を分離すること
を特徴とする。The main structure of the method of manufacturing a photovoltaic device according to the present invention is as follows. A first electrode layer, a semiconductor photoactive layer and a second electrode layer are laminated on a substrate having an insulating surface. Forming a power generation region, and forming an output region for extracting output from the power generation region, wherein the power generation region is disposed in the substrate effective portion, and the output region is adjacent to the substrate effective portion and the substrate effective portion. A method for manufacturing a photovoltaic device disposed over an ineffective portion of a substrate, comprising forming an electrode film constituting at least one of the first and second electrode layers on substantially the entire surface of the insulating surface. After the film is formed, the substrate is divided into the at least one electrode layer, and after measuring the electrical characteristics of the photovoltaic device from the output region, the substrate invalid portion is separated.
【０００６】[0006]
【実施例】以下に、本発明の光起電力装置の製造方法の
一実施例を、図１〜５を用いて詳細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of a method for manufacturing a photovoltaic device according to the present invention will be described below in detail with reference to FIGS.
【０００７】図１は、本実施例に用いる基板１０を表
し、図１（ａ）に示されるように、基板１０は矩形状で
あり可撓性及び透光性を有するポリエチレンナフタレ−
ト（ＰＥＮ）、ポリエチレンテレフタレ−ト（ＰＥ
Ｔ）、ポリイミド等の耐熱性絶縁樹脂フィルムからな
る。図において、一点鎖線で囲まれた１１、１１・・・
は、各々において、光起電力装置が形成される略円形の
基板有効部であり、１２は基板有効部１１の外側に位置
する基板無効部である。FIG. 1 shows a substrate 10 used in this embodiment. As shown in FIG. 1A, the substrate 10 has a rectangular shape and has a flexible and light-transmitting polyethylene naphthalate.
(PEN), polyethylene terephthalate (PE
T), a heat-resistant insulating resin film such as polyimide. In the figure, 11, 11,...
Is a substantially circular substrate effective portion in which a photovoltaic device is formed, and 12 is a substrate invalid portion located outside the substrate effective portion 11.
【０００８】図１（ｂ）は、基板１０の左下コーナー近
傍の基板有効部１１を示す拡大図であり、図に示される
ように２点鎖線により区分される領域が、以下に説明す
る如く配置されている。２０ａ〜２０ｄは後述する第１
電極層、半導体光活性層及び第２電極層の積層体で構成
される発電領域であり、略円形の基板有効部１１内にお
いて各々の面積がほぼ同じになるように縦方向に分割さ
れている。２０ａｔ、２０ｄｔは、配列された発電領域
２０ａ〜２０ｄの一端、他端に隣接配置された光起電力
装置からの出力を取り出すための一端、他端出力領域で
あり、基板有効部１１の円形外周に沿った帯状の円弧形
状で、基板有効部１１及び基板無効部１２にまたがって
配置されている。また、２０ｅは、この光起電力装置を
腕時計の文字板として利用するとき、指針を駆動する軸
が通る開穴が設けられる開穴領域、２０ｆは、日付表示
するための窓部が設けられる窓部領域であり、これら開
穴、窓部は、基板有効部１１と基板無効部１２とが切断
される時と同時に設けられる。FIG. 1B is an enlarged view showing the substrate effective portion 11 near the lower left corner of the substrate 10, and as shown in the figure, the area divided by the two-dot chain line is arranged as described below. Have been. 20a to 20d are the first to be described later.
A power generation region composed of a laminate of an electrode layer, a semiconductor photoactive layer, and a second electrode layer, which is divided in the vertical direction so that the respective areas are substantially the same in the substantially circular substrate effective portion 11. . 20at and 20dt are one end and the other end output regions for taking out outputs from the photovoltaic devices arranged adjacent to one end and the other end of the arranged power generation regions 20a to 20d. Are arranged in a strip-shaped arc shape along the substrate effective portion 11 and the substrate invalid portion 12. Reference numeral 20e denotes an opening area provided with an opening through which a shaft for driving hands is used when this photovoltaic device is used as a dial of a wristwatch, and reference numeral 20f denotes a window provided with a window for displaying a date. These apertures and windows are provided at the same time when the board valid part 11 and the board invalid part 12 are cut.
【０００９】以下の図２〜５に示す工程においては、基
板１０の左下コーナー近傍の光起電力装置の製造方法を
開示し、他の光起電力装置の製造方法はこれと同一なた
め、説明を省略する。In the following steps shown in FIGS. 2 to 5, a method of manufacturing a photovoltaic device in the vicinity of the lower left corner of the substrate 10 is disclosed, and the other photovoltaic devices are manufactured in the same manner. Is omitted.
【００１０】図２に示す工程において、基板１０の全面
に、酸化亜鉛（ＺｎＯ）、酸化インジウム錫（ＩＴ
Ｏ）、酸化錫（ＳｎＯ2）等の透明導電膜からなる第１
電極膜４０（厚さ約０．０７〜１．０μｍ）を形成す
る。次に、発電領域２０ａと一端出力領域２０ａｔとの
境界部を除いて、発電領域２０ａ〜２０ｄ、一端出力領
域２０ａｔ、他端出力領域２０ｄｔ、開穴領域２０ｅ、
窓部領域２０ｆの領域境界間に、レーザビームや電子ビ
ーム等のエネルギービームを照射して、照射部分の第１
電極膜を除去し、分離溝３０、３０・・・（幅約２０〜
１００μｍ）を形成する。これにより、発電領域２０ａ
〜２０ｄに対応した第１電極層４０ａ〜４０ｄ、他端出
力領域２０ｄｔに対応した第１電極パッド４０ｄｔに分
離すると共に、一端出力領域２０ａｔに対応して第１電
極層４０ａから延出する第１電極延出部４０ａｔを形成
する。In the step shown in FIG. 2, zinc oxide (ZnO), indium tin oxide (IT
O) and a first conductive film made of a transparent conductive film such as tin oxide (SnO 2 ).
An electrode film 40 (having a thickness of about 0.07 to 1.0 μm) is formed. Next, except for the boundary between the power generation region 20a and the one end output region 20at, the power generation regions 20a to 20d, one end output region 20at, the other end output region 20dt, the hole opening region 20e,
An energy beam, such as a laser beam or an electron beam, is irradiated between the region boundaries of the window region 20f, so that the first portion of the irradiated portion is irradiated.
The electrode film is removed, and the separation grooves 30, 30.
100 μm). Thereby, the power generation area 20a
The first electrode layers 40a to 40d corresponding to the first to fourth electrode regions 40a to 40d and the first electrode pads 40dt corresponding to the other end output region 20dt are separated from each other, and the first electrode layers 40a to 40d extending from the first electrode layer 40a corresponding to the one end output region 20at. An electrode extension 40at is formed.
【００１１】次に、図３に示す工程においては、分離溝
３０、３０・・・に、領域間絶縁部材５１を、各第１電
極層４０ａ〜４０ｄの左端上に電極層上絶縁部材５２
を、各々配置する。これら絶縁部材５１、５２は、ポリ
イミド又はフェノ−ル系のバインダーに二酸化シリコン
等の無機材料の粉末（粒径約１．５〜７．０μｍ）を含
むもので、スクリーン印刷法によりパタ−ニングされた
後、２５０〜３００℃で乾燥され、高さ約１０〜５０μ
ｍ、幅約０．２〜０．６ｍｍに形成される。Next, in the step shown in FIG. 3, the inter-region insulating member 51 is provided in the separation grooves 30, 30,... On the left end of each of the first electrode layers 40a to 40d.
Are arranged respectively. These insulating members 51 and 52 are made of polyimide or a phenol-based binder containing powder of an inorganic material such as silicon dioxide (particle diameter: about 1.5 to 7.0 μm), and are patterned by screen printing. After that, it is dried at 250-300 ° C. and has a height of about 10-50 μm.
m and a width of about 0.2 to 0.6 mm.
【００１２】そして、第１電極層上で基板１０の略全面
に、アモルファスシリコン、アモルファスシリコンカー
バイド、アモルファスシリコンゲルマニウム等をｐｎま
たはｐｉｎに積層した半導体光活性膜６０（厚さ約０．
３〜１．０μｍ）を、及び、アルミニウム、チタン、ニ
ッケル等の金属膜からなる第２電極膜７０（厚さ約０．
１〜１．０μｍ）を積層形成する。A semiconductor photoactive film 60 (having a thickness of about 0. 0) formed by laminating amorphous silicon, amorphous silicon carbide, amorphous silicon germanium, or the like on pn or pin over substantially the entire surface of the substrate 10 on the first electrode layer.
3 to 1.0 μm) and a second electrode film 70 (having a thickness of about 0.1 μm) made of a metal film of aluminum, titanium, nickel, or the like.
1 to 1.0 μm).
【００１３】次に、図４に示す工程においては、この第
２導電膜７０の露出方向から、各発電領域２０ａ〜２０
ｄ間及び発電領域２０ｄと他端出力領域２０ｄｔとの間
の領域間を除いて、絶縁部材５１、５２上に、レーザビ
ームや電子ビーム等のエネルギービームを照射して、照
射部分の半導体光活性膜６０及び第２電極膜７０を除去
し、絶縁部材５１、５２に到達する上部分割溝８１、８
２（幅約２０〜１００μｍ）を形成する。Next, in the step shown in FIG. 4, each of the power generation regions 20a to 20a is viewed from the direction in which the second conductive film 70 is exposed.
The insulating members 51 and 52 are irradiated with an energy beam, such as a laser beam or an electron beam, except for a region between the power generation region 20d and a region between the power generation region 20d and the other end output region 20dt, so that the semiconductor photoactive portion of the irradiated portion is irradiated. The film 60 and the second electrode film 70 are removed, and the upper division grooves 81 and 8 reaching the insulating members 51 and 52, respectively.
2 (width of about 20 to 100 μm).
【００１４】そして、これらの上部分割溝８１、８２に
より、各発電領域に対応した半導体光活性層６０ａ〜６
０ｄ及び第２電極層７０ａ〜７０ｄに分割形成される。
加えて、一端出力領域２０ａｔにおいては、半導体光活
性膜材料からなる半導体層６０ａｔ及び第２電極膜材料
からなる第２電極パッド７０ａｔが分割形成されること
になる。一方、他端出力領域２０ｄｔにおいては、半導
体光活性層６０ｄから延出した半導体層６０ｄｔ及び第
２電極層７０ｄから延出する第２電極延出部７０ｄｔが
形成されることになる。Then, the semiconductor photoactive layers 60a to 60 corresponding to the respective power generation regions are formed by the upper division grooves 81 and 82.
0d and the second electrode layers 70a to 70d.
In addition, in the one end output region 20at, the semiconductor layer 60at made of the semiconductor photoactive film material and the second electrode pad 70at made of the second electrode film material are formed separately. On the other hand, in the other end output region 20dt, a semiconductor layer 60dt extending from the semiconductor photoactive layer 60d and a second electrode extension 70dt extending from the second electrode layer 70d are formed.
【００１５】更に、第２電極膜の露出側から、第１電極
層４０ｂ〜４０ｄの左端上、第１電極延出部４０ａｔ上
における第１電極層４０ａとの境界部分に沿った部分
上、第１電極パッド４０ｄｔ上における第１電極層４０
ｄとの境界部分に沿った部分上に、レーザビームや電子
ビーム等のエネルギービームを照射する。これにより、
第１電極層４０ｂ〜４０ｄと隣接する第２電極層７０ａ
〜７０ｃとが、各々溶着され電気的に接続され、各発電
領域２０ａ〜２０ｄが直列に接続される。また、一端出
力領域２０ａｔにおいては、第２電極パッド７０ａｔと
第１電極延出部４０ａｔとが溶着され電気的に接続さ
れ、第１電極層２０ａからの出力を導出することができ
る。更には、他端出力領域２０ｄｔにおいては、第２電
極延出部７０ｄｔと第１電極パッド４０ａｔとが溶着さ
れ電気的に接続され、この溶着部分により出力領域２０
ｄｔでの電気抵抗が低減し、集電効率が向上する。な
お、これら溶着された部分を、溶着部分７１、７１・・
・として、図４に示す。Further, from the exposed side of the second electrode film, on the left ends of the first electrode layers 40b to 40d, on the portion of the first electrode extension 40at along the boundary with the first electrode layer 40a, First electrode layer 40 on one electrode pad 40dt
An energy beam such as a laser beam or an electron beam is irradiated on a portion along the boundary with d. This allows
Second electrode layer 70a adjacent to first electrode layers 40b to 40d
To 70c are respectively welded and electrically connected, and the power generation regions 20a to 20d are connected in series. Further, in the one-end output region 20at, the second electrode pad 70at and the first electrode extension 40at are welded and electrically connected, so that the output from the first electrode layer 20a can be derived. Further, in the other end output region 20dt, the second electrode extension portion 70dt and the first electrode pad 40at are welded and electrically connected, and the welded portion forms the output region 20dt.
The electric resistance at dt is reduced, and the current collection efficiency is improved. In addition, these welded portions are referred to as welded portions 71, 71,.
As shown in FIG.
【００１６】そして、溶着工程の後、帯状円弧形状の第
２電極パッド７０ａｔ、第２電極延出部７０ｄｔ上に、
島状の一端、他端出力取出部９０ａｔ、９０ｄｔを形成
する。これら一端、他端出力取出部９０ａｔ、９０ｄｔ
は、ポリイミド、フェノ−ル又はエポキシ系のバインダ
ーに、銅粉末又は黒鉛粉末等を含むもので、スクリーン
印刷によりパターン配置された後、加熱処置され形成さ
れる。After the welding step, the second electrode pad 70at and the second electrode extension 70dt in the shape of an arc of a strip are placed on the second electrode pad 70at and the second electrode extension 70dt.
One end and the other end of the island are formed with output extraction portions 90at and 90dt. These one end and the other end output extraction parts 90at, 90dt
Is a polyimide, phenol or epoxy-based binder containing copper powder or graphite powder, and is formed by patterning by screen printing and then heating.
【００１７】そして、次に、基板１０の裏面側より基板
１０の全域に光を照射しつつ、一端、他端出力取出部９
０ａｔ、９０ｄｔより、基板１０上に形成された複数の
光起電力装置の電気出力測定を行う。ここで、各々の光
起電力装置は、上述の如く、各々、電気的に分離されて
いることにより、他の光起電力装置と不所望に電気的に
接続することなく、正確に特性を測定することができ
る。また、基板１０単位で測定ができることより、光起
電力装置を１個、１個分離して、測定するよりも短時間
で、多くの光起電力装置の特性を測定することが可能で
ある。Next, while irradiating light to the whole area of the substrate 10 from the back side of the substrate 10, one end and the other end
From 0 at and 90 dt, the electrical output of a plurality of photovoltaic devices formed on the substrate 10 is measured. Here, since each photovoltaic device is electrically isolated as described above, the characteristics can be accurately measured without being undesirably electrically connected to other photovoltaic devices. can do. Further, since the measurement can be performed for each substrate 10, it is possible to measure the characteristics of many photovoltaic devices in a shorter time than when separating and measuring one photovoltaic device.
【００１８】次に、プレス工程を用いて、基板無効部１
２を切断して基板有効部１１を分離すると共に、開穴領
域２０ｅに開穴２１ｅ、窓部領域２０ｆに窓部２１ｆを
設け、図５に示す光起電力装置を完成する。Next, using the pressing process, the substrate invalid portion 1
2, the substrate effective portion 11 is separated, and a hole 21e is provided in the hole region 20e and a window 21f is provided in the window region 20f, thereby completing the photovoltaic device shown in FIG.
【００１９】ここで、一端、他端出力領域２０ａｔ、２
０ｄｔにおいて、基板無効部１２に位置する部分が切断
されるので、完成した光起電力装置における（発電領域
の面積）／（基板有効部面積）で示される有効面積率を
大きくすることができる。Here, one end and the other end output areas 20at, 2at
At 0dt, the portion located at the substrate invalid portion 12 is cut, so that the effective area ratio of the completed photovoltaic device represented by (area of the power generation region) / (substrate effective portion area) can be increased.
【００２０】また、本実施例においては、基板１０を透
光性として、この側より光を入射しているが、第２電極
層を透明として、この側より光を入射させてもよい。In the present embodiment, the substrate 10 is made translucent and light enters from this side. However, the second electrode layer may be made transparent and light enters from this side.
【００２１】[0021]
【発明の効果】本発明の光起電力装置の製造方法は、以
上の説明の如く、出力領域が基板有効部及び基板有効部
に隣接配置された基板無効部に渡って配置され、出力領
域より光起電力装置の電気特性測定後、基板無効部を分
離しているので、特性測定を正確に行えると共に、（発
電領域の面積）／（基板有効部面積）で示される有効面
積率を大きくすることができる。As described above, according to the method for manufacturing a photovoltaic device of the present invention, the output region is disposed over the effective portion of the substrate and the invalid portion disposed adjacent to the effective portion of the substrate. After measuring the electrical characteristics of the photovoltaic device, the ineffective portion of the substrate is separated, so that the characteristics can be measured accurately and the effective area ratio represented by (area of the power generation region) / (effective area of the substrate) is increased. be able to.
【図１】本発明の一実施例における基板を示す図であ
り、（ａ）は平面図、（ｂ）は左下コーナー近傍におけ
る基板有効部の拡大平面図である。1A and 1B are diagrams showing a substrate according to an embodiment of the present invention, wherein FIG. 1A is a plan view, and FIG. 1B is an enlarged plan view of an effective portion of the substrate near a lower left corner.
【図２】本発明の一実施例における第１工程を示す図で
あり、（ａ）は平面図、（ｂ）は（ａ）におけるＡ−Ａ
断面図である。FIGS. 2A and 2B are diagrams showing a first step in one embodiment of the present invention, wherein FIG. 2A is a plan view and FIG. 2B is AA in FIG.
It is sectional drawing.
【図３】本発明の一実施例における第２工程を示す図で
あり、（ａ）は平面図、（ｂ）は（ａ）におけるＡ−Ａ
断面図、（ｃ）は（ａ）におけるＢ−Ｂ断面図である。3A and 3B are diagrams showing a second step in one embodiment of the present invention, wherein FIG. 3A is a plan view, and FIG.
Sectional drawing, (c) is BB sectional drawing in (a).
【図４】本発明の一実施例における第３工程を示す図で
あり、（ａ）は平面図、（ｂ）は（ａ）におけるＡ−Ａ
断面図、（ｃ）は（ａ）におけるＢ−Ｂ断面図である。FIGS. 4A and 4B are views showing a third step in one embodiment of the present invention, wherein FIG. 4A is a plan view and FIG.
Sectional drawing, (c) is BB sectional drawing in (a).
【図５】本発明の一実施例における完成した光起電力装
置を示す図であり、（ａ）は平面図、（ｂ）は（ａ）に
おけるＡ−Ａ断面図、（ｃ）は（ａ）におけるＢ−Ｂ断
面図である。5A and 5B are diagrams showing a completed photovoltaic device according to an embodiment of the present invention, wherein FIG. 5A is a plan view, FIG. 5B is a cross-sectional view taken along the line AA in FIG. FIG.
１０ 基板 １１ 基板有効部 １２ 基板無効部 ２０ａ〜２０ｄ 発電領域 ２０ａｔ 一端出力領域 ２０ｄｔ 他端出力領域 ４０ 第１電極膜 ４０ａ〜４０ｄ 第１電極層 ６０ 半導体光活性膜 ６０ａ〜６０ｄ 半導体光活性層 ７０ 第２電極膜 ７０ａ〜７０ｄ 第２電極層 DESCRIPTION OF SYMBOLS 10 Substrate 11 Substrate effective part 12 Substrate invalid part 20a-20d Power generation area 20at One end output area 20dt Other end output area 40 First electrode film 40a-40d First electrode layer 60 Semiconductor photoactive film 60a-60d Semiconductor photoactive layer 70 No. Two-electrode film 70a to 70d Second electrode layer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 小野 雅義 大阪府守口市京阪本通２丁目５番５号 三 洋電機株式会社内 ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Masayoshi Ono 2-5-5 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd.
Claims (3)
層、半導体光活性層及び第２電極層の積層体からなる複
数の発電領域を直列接続して配列し、これら配列された
前記発電領域の一端、他端に隣接してこれらから出力を
取り出すための一端、他端出力領域を形成し、前記発電
領域が基板有効部に配置され、前記出力領域が前記基板
有効部及び前記基板有効部に隣接する基板無効部に渡っ
て配置される光起電力装置の製造方法であって、 前記絶縁表面の略全面に前記第１電極層を構成する第１
電極膜を形成後、前記一端の発電領域に対応した前記第
１電極層から前記一端出力領域に対応した前記第１電極
膜の一端部分に渡る部分と、前記一端を除く前記発電領
域に対応した前記第１電極層と、前記他端出力領域に対
応した前記第１電極膜の他端部分とを電気的に分離する
工程と、 前記各第１電極層上に前記半導体光活性層を配置する工
程と、 これらの半導体光活性層上を含んで前記絶縁表面の略全
面に前記第２電極層を構成する第２電極膜を形成後、前
記一端出力領域に対応した前記第２電極膜の一端部分
と、前記他端を除く前記発電領域に対応した前記第２電
極層と、前記他端発電領域に対応した前記第２電極層か
ら前記他端の出力領域に対応した前記第２電極膜の他端
部分に渡る部分とを、電気的に分離する工程と、 前記他端の前記第２電極層を除く前記第２電極層と、隣
接する前記発電領域の前記第１電極層とを電気接続する
工程と、 前記出力領域より前記光起電力装置の電気特性測定を行
う工程と、 前記基板有効部と前記基板無効部とを分離する工程と
を、備えることを特徴とする光起電力装置の製造方法。1. A plurality of power generation regions each comprising a stacked body of a first electrode layer, a semiconductor photoactive layer and a second electrode layer are arranged in series on a substrate having an insulating surface, and the plurality of power generation regions are arranged in series. One end and the other end of the region are formed adjacent to one end and the other end for taking output therefrom, and the power generation region is disposed in the substrate effective portion, and the output region is disposed in the substrate effective portion and the substrate effective portion. A method for manufacturing a photovoltaic device disposed over a substrate invalid portion adjacent to a portion, wherein the first electrode layer is formed on substantially the entire surface of the insulating surface.
After forming the electrode film, a portion extending from the first electrode layer corresponding to the power generation region at the one end to one end portion of the first electrode film corresponding to the one output region, and corresponding to the power generation region excluding the one end. Electrically separating the first electrode layer from the other end portion of the first electrode film corresponding to the other end output region; and disposing the semiconductor photoactive layer on each of the first electrode layers. Forming a second electrode film constituting the second electrode layer on substantially the entire surface of the insulating surface including on the semiconductor photoactive layer, and then forming one end of the second electrode film corresponding to the one end output region. A portion, the second electrode layer corresponding to the power generation region excluding the other end, and the second electrode film corresponding to the output region at the other end from the second electrode layer corresponding to the other end power generation region. A step of electrically separating a portion extending to the other end portion; Electrically connecting the second electrode layer excluding the second electrode layer and the first electrode layer of the adjacent power generation region; and measuring the electrical characteristics of the photovoltaic device from the output region. And a step of separating the effective part of the substrate and the invalid part of the substrate.
電極層を構成する第１電極膜、半導体光活性層を構成す
る半導体光活性膜及び第２電極層を構成する第２電極膜
を、各々、成膜した後、これらを分割して第１電極層、
半導体光活性層及び第２電極層の積層体からなる発電領
域を形成すると共に、この発電領域からの出力を取り出
すための出力領域を形成し、前記発電領域が基板有効部
に配置され、前記出力領域が前記基板有効部及び前記基
板有効部に隣接する基板無効部に渡って配置される光起
電力装置の製造方法であって、 前記出力領域より光起電力装置の電気特性測定後、前記
基板無効部を分離することを特徴とする光起電力装置の
製造方法。2. The method according to claim 1, wherein the first surface is provided on substantially the entire surface of the substrate having the insulating surface.
After forming a first electrode film constituting an electrode layer, a semiconductor photoactive film constituting a semiconductor photoactive layer, and a second electrode film constituting a second electrode layer, these are divided and the first electrode film is divided. layer,
Forming a power generation region comprising a stacked body of the semiconductor photoactive layer and the second electrode layer, and forming an output region for extracting an output from the power generation region, wherein the power generation region is disposed in a substrate effective portion; A method for manufacturing a photovoltaic device in which a region is disposed over a substrate invalid portion and a substrate invalid portion adjacent to the substrate valid portion, wherein after measuring electrical characteristics of the photovoltaic device from the output region, the substrate A method for manufacturing a photovoltaic device, comprising separating an ineffective portion.
半導体光活性層及び第２電極層の積層体からなる発電領
域を形成すると共に、この発電領域からの出力を取り出
すための出力領域を形成し、前記発電領域が基板有効部
に配置され、前記出力領域が前記基板有効部及び前記基
板有効部に隣接する基板無効部に渡って配置される光起
電力装置の製造方法であって、 前記絶縁表面上の略全面に前記第１、第２電極層の少な
くとも一方の電極層を構成する電極膜を成膜後、前記少
なくとも一方の電極層に分割すると共に、 前記出力領域より光起電力装置の電気特性測定後、前記
基板無効部を分離することを特徴とする光起電力装置の
製造方法。3. A first electrode layer on a substrate having an insulating surface.
Forming a power generation region comprising a stacked body of the semiconductor photoactive layer and the second electrode layer, and forming an output region for extracting an output from the power generation region, wherein the power generation region is disposed in a substrate effective portion; A method for manufacturing a photovoltaic device, wherein a region is disposed over an effective portion of the substrate and an invalid portion of the substrate adjacent to the effective portion of the substrate, wherein the first and second electrode layers are provided on substantially the entire surface of the insulating surface. After forming an electrode film constituting at least one of the electrode layers, the substrate is divided into the at least one electrode layer, and after the electrical characteristics of the photovoltaic device are measured from the output region, the substrate invalid portion is separated. A method for manufacturing a photovoltaic device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8257073A JPH10107305A (en) | 1996-09-27 | 1996-09-27 | Manufacturing method of photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8257073A JPH10107305A (en) | 1996-09-27 | 1996-09-27 | Manufacturing method of photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10107305A true JPH10107305A (en) | 1998-04-24 |
Family
ID=17301377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8257073A Pending JPH10107305A (en) | 1996-09-27 | 1996-09-27 | Manufacturing method of photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10107305A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6365431B1 (en) * | 1999-11-30 | 2002-04-02 | Sanyo Electric Co., Ltd. | Method of manufacturing a photovoltaic device |
-
1996
- 1996-09-27 JP JP8257073A patent/JPH10107305A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6365431B1 (en) * | 1999-11-30 | 2002-04-02 | Sanyo Electric Co., Ltd. | Method of manufacturing a photovoltaic device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP3050122B1 (en) | Metallization of solar cells using metal foils | |
| JPH07231015A (en) | Semiconductor device and manufacturing method thereof | |
| JP3889470B2 (en) | Solar cell and method for manufacturing the same | |
| WO2004064167A1 (en) | Transparent thin-film solar cell module and its manufacturing method | |
| JP2010062185A (en) | Photoelectric converter and method of manufacturing the same | |
| JPH10214983A (en) | Photovoltaic device and manufacturing method thereof | |
| JP4090188B2 (en) | Photovoltaic device and manufacturing method thereof | |
| JP3237621B2 (en) | Photoelectric conversion device and method of manufacturing the same | |
| JPH10107305A (en) | Manufacturing method of photovoltaic device | |
| JP3111805B2 (en) | Thin film solar cell and method of manufacturing the same | |
| JP2820466B2 (en) | Method for manufacturing photovoltaic generator | |
| JP3573869B2 (en) | Method for manufacturing photovoltaic device | |
| US5032527A (en) | Method of forming lead-out electrode portion of photovoltaic device | |
| JP2598967B2 (en) | Method for manufacturing photovoltaic device | |
| JP3920661B2 (en) | Method for manufacturing photovoltaic device | |
| JP4001651B2 (en) | Manufacturing method of solar cell | |
| JP2883371B2 (en) | Photovoltaic device and manufacturing method thereof | |
| JP7546213B2 (en) | Solar cell and method for manufacturing solar cell | |
| JPH10275920A (en) | Photovoltaic device and method for manufacturing photoelectric conversion device | |
| JP4090168B2 (en) | Photovoltaic device manufacturing method | |
| JP2994810B2 (en) | Photovoltaic device and manufacturing method thereof | |
| JPH0582816A (en) | Photovoltaic device and its manufacture | |
| JP2001111079A (en) | Manufacturing method of photoelectric conversion device | |
| JPH05145097A (en) | Manufacture of photovoltaic device | |
| JP2819538B2 (en) | Method for manufacturing photovoltaic device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050627 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050830 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20051227 |
|
| RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20051227 |