JPH10104402A - Reflection antistatic film and display device using the same - Google Patents
Reflection antistatic film and display device using the sameInfo
- Publication number
- JPH10104402A JPH10104402A JP8258727A JP25872796A JPH10104402A JP H10104402 A JPH10104402 A JP H10104402A JP 8258727 A JP8258727 A JP 8258727A JP 25872796 A JP25872796 A JP 25872796A JP H10104402 A JPH10104402 A JP H10104402A
- Authority
- JP
- Japan
- Prior art keywords
- film
- antistatic
- display device
- refractive index
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 20
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- -1 silicon alkoxide Chemical class 0.000 claims abstract description 9
- 239000000843 powder Substances 0.000 claims abstract description 7
- 239000011882 ultra-fine particle Substances 0.000 claims description 19
- 230000003746 surface roughness Effects 0.000 claims description 7
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 6
- 229910018540 Si C Inorganic materials 0.000 claims description 3
- 125000003545 alkoxy group Chemical group 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 101100386054 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CYS3 gene Proteins 0.000 claims 1
- 239000010419 fine particle Substances 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 101150035983 str1 gene Proteins 0.000 claims 1
- 238000003980 solgel method Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- 239000000377 silicon dioxide Substances 0.000 description 11
- 239000011521 glass Substances 0.000 description 9
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
- 229920000592 inorganic polymer Polymers 0.000 description 5
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- LFYJSSARVMHQJB-QIXNEVBVSA-N bakuchiol Chemical compound CC(C)=CCC[C@@](C)(C=C)\C=C\C1=CC=C(O)C=C1 LFYJSSARVMHQJB-QIXNEVBVSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 1
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Silicon Polymers (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Laminated Bodies (AREA)
Abstract
(57)【要約】
【課題】従来のゾルゲル法よりも膜強度が高く、表面の
平坦性の優れた反射帯電防止膜の提供にある。
【解決手段】表示装置の表示パネルフェース面に形成さ
れる反射帯電防止膜であって、該反射帯電防止膜が導電
性の超微粒子粉末を含み透明な帯電防止層の上に、Ｓｉ
骨格に低級アルキル基が直結したシリコンアルコキシド
を含むシリカゾル溶液から形成され、前記帯電防止層よ
りも低屈折率の低屈折率層が積層されており、前記低屈
折率層中のアルキル基の濃度が７〜３０重量％である反
射帯電防止膜。(57) Abstract: An object of the present invention is to provide a reflective antistatic film having a higher film strength than a conventional sol-gel method and excellent surface flatness. A reflective antistatic film formed on a display panel face surface of a display device, wherein the reflective antistatic film contains conductive ultrafine powder and has a Si layer on a transparent antistatic layer.
It is formed from a silica sol solution containing a silicon alkoxide in which a lower alkyl group is directly bonded to a skeleton, and a low refractive index layer having a lower refractive index than the antistatic layer is laminated, and the concentration of the alkyl group in the low refractive index layer is reduced. A reflection antistatic film having a content of 7 to 30% by weight.
Description
【０００１】[0001]
【発明の属する技術分野】陰極線管（ＣＲＴ），液晶表
示装置（ＬＣＤ）などの表示装置のフェースプレート表
面に形成される反射帯電防止膜およびそれを用いた表示
装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reflection antistatic film formed on a face plate surface of a display device such as a cathode ray tube (CRT) and a liquid crystal display (LCD), and a display device using the same.
【０００２】[0002]
【従来の技術】ＣＲＴ，ＬＣＤ等の表示装置の高性能化
に伴い、それらのフェースプレート面上には反射帯電防
止膜が形成されるようになってきた。2. Description of the Related Art As display devices such as CRTs and LCDs have been improved in performance, reflection antistatic films have been formed on their face plate surfaces.
【０００３】これらの反射帯電防止膜の形成方法として
は、スパッタ法、真空蒸着法などの手法もあるが、現在
コスト的な観点からゾルゲル法などの溶液を使用した塗
布法が主流である（特開平６−２３４５５２号公報）。[0003] As a method for forming these reflective antistatic films, there are techniques such as sputtering and vacuum deposition. However, from the viewpoint of cost, a coating method using a solution such as a sol-gel method is currently the mainstream (particularly). JP-A-6-234552).
【０００４】これは、導電性を有するＳｎＯ2やＩｎ2Ｏ
3等の超微粒子を分散した溶液を塗布して成膜後、その
上にシリカ膜を形成して積層膜とし、次いで、熱処理し
て膜を硬化する。この膜は、上層が高屈折率、下層が低
屈折率の積層膜となるため、光の干渉効果を利用して反
射光を減ずることができる。[0004] This is because SnO 2 or In 2 O having conductivity is used.
A solution in which ultrafine particles such as 3 are dispersed is applied to form a film, and then a silica film is formed thereon to form a laminated film, and then heat-treated to cure the film. In this film, since the upper layer is a laminated film having a high refractive index and the lower layer is a laminated film having a low refractive index, reflected light can be reduced by utilizing a light interference effect.
【０００５】また、下層の低屈折率層は導電性の超微粒
子を含ませているために、帯電防止の効果を有する。こ
のため、反射防止と帯電防止の二つの効果を有する。Further, the lower low refractive index layer, which contains conductive ultrafine particles, has an antistatic effect. Therefore, it has two effects of antireflection and antistatic.
【０００６】[0006]
【発明が解決しようとする課題】ゾルゲル法で作製した
上記積層膜は、上層に形成されるシリカ膜と下層の導電
性膜により、反射防止機能と帯電防止機能が発現する。The laminated film produced by the sol-gel method exhibits an antireflection function and an antistatic function due to the silica film formed on the upper layer and the lower conductive film.
【０００７】この反射帯電防止機能が発現する機構とし
ては、上層にスピンコートされたシリカゾル溶液が下層
の超微粒子層中へしみ込み、膜の硬化過程で超微粒子同
士の接着により導電パスが形成されて帯電防止機能が発
現し、ＣＲＴガラスへの超微粒子層の密着を高め、下層
よりも低屈折率のシリカ層が、高屈折率の下層と相俟っ
て光の干渉効果が生じ、反射防止機能が発現する。As a mechanism for exhibiting the anti-reflection function, the silica sol solution spin-coated on the upper layer infiltrates into the lower ultrafine particle layer, and a conductive path is formed by adhesion of the ultrafine particles during the curing process of the film. The anti-static function is developed, and the adhesion of the ultrafine particle layer to the CRT glass is enhanced. The function appears.
【０００８】しかし、これはシリカゾルの収縮硬化作用
を利用しているために、次のような問題がある。However, this method has the following problems because it utilizes the shrinkage hardening action of silica sol.
【０００９】上層のシリカ膜の硬化収縮により膜中に残
留応力が発生し、膜の強度が低下することである。ま
た、硬化収縮時に、下層の超微粒子層の形状を反映して
上層のシリカ層の表面に微小な凹凸が形状されることで
ある。即ち、下層の超微粒子が、粒子径が数十から数百
Åの分布を有するため、形成される超微粒子層の平坦性
は不均一となる。この下層の不均一な形状が上層に形成
されるシリカ層に反映されて表面に微小な凹凸が生ずる
ために、反射防止膜としての性能が均一なものとならな
かった。また、膜強度も残留応力のために弱いものであ
った。[0009] Residual stress is generated in the upper silica film due to curing shrinkage of the film, and the strength of the film is reduced. Another problem is that, upon curing shrinkage, minute irregularities are formed on the surface of the upper silica layer reflecting the shape of the lower ultrafine particle layer. That is, since the ultrafine particles in the lower layer have a particle size distribution of several tens to several hundreds of square meters, the formed ultrafine particle layer has non-uniform flatness. Since the uneven shape of the lower layer is reflected on the silica layer formed on the upper layer, and minute irregularities are generated on the surface, the performance as an antireflection film is not uniform. Also, the film strength was weak due to residual stress.
【００１０】本発明の目的は、上記の課題を解決するた
めになされたもので、膜強度が高く、反射帯電防止性能
の優れた反射帯電防止膜を提供することにある。An object of the present invention is to solve the above-mentioned problems, and an object of the present invention is to provide a reflective antistatic film having high film strength and excellent reflective antistatic performance.
【００１１】本発明の他の目的は、上記反射帯電防止膜
を設けた表示装置を提供することにある。Another object of the present invention is to provide a display device provided with the above-mentioned reflective antistatic film.
【００１２】[0012]
【課題を解決するための手段】前記目的を達成する本発
明の要旨は下記のとおりである。The gist of the present invention to achieve the above object is as follows.
【００１３】（１） 表示装置の表示パネルフェース面
に形成される反射帯電防止膜であって、該反射帯電防止
膜が導電性の超微粒子粉末を含み透明な帯電防止層の上
に、Ｓｉ骨格に低級アルキル基が直結した式〔１〕(1) A reflective antistatic film formed on a display panel face surface of a display device, wherein the reflective antistatic film contains conductive ultrafine powder and has a Si skeleton on a transparent antistatic layer. [1] wherein a lower alkyl group is directly bonded to
【００１４】[0014]
【化３】 Ｒ3−Ｓｉ−ＣnＨ2n+1 …〔１〕 （式中、Ｒはアルコキシ基、ｎは１〜４の整数）で示さ
れるシリコンアルコキシドを含むシリカゾル溶液から形
成され、前記帯電防止層よりも低屈折率の低屈折率層が
積層されており、前記低屈折率層中のアルキル基の濃度
が７〜３０重量％であることを特徴とする反射帯電防止
膜。Embedded image R 1 —Si—C n H 2n + 1 (1) wherein R is an alkoxy group and n is an integer of 1 to 4 formed from a silica sol solution containing a silicon alkoxide represented by the formula: A reflective antistatic film, wherein a low refractive index layer having a lower refractive index than the antistatic layer is laminated, and the concentration of the alkyl group in the low refractive index layer is 7 to 30% by weight.
【００１５】（２） 出射光または反射光を変調するこ
とにより表示を行う表示装置において、前記表示装置の
表示パネルフェース面に、導電性の超微粒子粉末を含み
透明な帯電防止層の上に、Ｓｉ骨格に低級アルキル基が
直結した前記式〔１〕で示されるシリコンアルコキシド
を含むシリカゾル溶液から形成され、前記帯電防止層よ
りも低屈折率の低屈折率層が積層されており、前記低屈
折率層中のアルキル基の濃度が７〜３０重量％である反
射帯電防止膜を設けたことを特徴とする表示装置。(2) In a display device which performs display by modulating outgoing light or reflected light, a display panel face surface of the display device is provided on a transparent antistatic layer containing conductive ultra-fine particle powder. A low-refractive-index layer having a lower refractive index than the antistatic layer, which is formed from a silica sol solution containing a silicon alkoxide represented by the formula [1] in which a lower alkyl group is directly bonded to a Si skeleton; A display device comprising a reflection antistatic film having an alkyl group concentration of 7 to 30% by weight in a rate layer.
【００１６】前記高屈折率層の導電性の超微粒子粉末
が、Ｉｎ2Ｏ3，ＳｎＯ2またはＺｎＯである。The conductive ultrafine particle powder of the high refractive index layer is In 2 O 3 , SnO 2 or ZnO.
【００１７】前記反射帯電防止膜の低屈折率層中の膜の
残留応力が５ｄｙｎ／ｃｍ2以下のものである。[0017] The residual stress of the film in the low refractive index layer of the reflective antistatic film is 5 dyn / cm 2 or less.
【００１８】[0018]
【発明の実施の形態】前記表示装置上に形成される低屈
折率層／高屈折率層が積層された反射帯電防止膜は、低
屈折率層中のアルキル基の濃度を７〜３０重量％とする
ことにより、上層の低屈折率層の残留応力が減少し、こ
れにより高強度の反射帯電防止膜を得ることができる。
これは、可撓性を有するアルキル基が膜中に存在するた
めである。BEST MODE FOR CARRYING OUT THE INVENTION In a reflection / antistatic film having a low refractive index layer / high refractive index layer laminated on a display device, the concentration of an alkyl group in the low refractive index layer is 7 to 30% by weight. By doing so, the residual stress of the upper low-refractive-index layer is reduced, whereby a high-strength reflective antistatic film can be obtained.
This is because a flexible alkyl group exists in the film.
【００１９】上記の低屈折率層の材料としての前記式
〔１〕で示されるシリコンアルコキシドは、シリカを主
骨格としメチル基，エチル基，プロピル基，ブチル基等
のアルキル基がＳｉに直結したものである。なお、Ｒで
示されるアルコキシ基としてはエトキシ基が好ましい。The silicon alkoxide represented by the above formula [1] as a material of the low refractive index layer has silica as a main skeleton and an alkyl group such as a methyl group, an ethyl group, a propyl group or a butyl group is directly bonded to Si. Things. In addition, an ethoxy group is preferable as the alkoxy group represented by R.
【００２０】この低屈折率層材料は、そのゾル溶液中に
存在する無機ポリマの末端水酸基量が、上記のアルキル
基によって調整され、無機ポリマ間の水素結合が弱めら
れる。このため熱処理時に無機ポリマ同士が動き易くな
り熱流動性を示す。無機ポリマの末端水酸基の量が調整
されていないものは、無機ポリマ間の水素結合が強いた
めに熱流動性を示さない。In this low refractive index layer material, the amount of terminal hydroxyl groups of the inorganic polymer present in the sol solution is adjusted by the above-mentioned alkyl group, and the hydrogen bond between the inorganic polymers is weakened. Therefore, the inorganic polymers easily move during the heat treatment, and exhibit heat fluidity. An inorganic polymer in which the amount of terminal hydroxyl groups is not adjusted does not exhibit thermal fluidity due to strong hydrogen bonding between the inorganic polymers.
【００２１】この低屈折率層材料は１００〜２００℃の
熱処理により熱流動性を示すため、スピンコート時の表
面の凹凸が平坦化され、反射帯電防止膜としての表面粗
さが減少する。Since the low refractive index layer material exhibits thermal fluidity by heat treatment at 100 to 200 ° C., the surface irregularities during spin coating are flattened, and the surface roughness as a reflection / antistatic film is reduced.
【００２２】また、熱流動性により下層の超微粒子層中
にしみ込み易く、導電性を有するＳｎＯ2やＩｎ2Ｏ3等
の超微粒子同士の接着がより向上し導電性が向上する。
この導電性向上により帯電防止特性が良好なものとな
る。Further, it is easy to penetrate into the lower layer of ultrafine particles due to thermal fluidity, and the adhesion between conductive ultrafine particles such as SnO 2 and In 2 O 3 is further improved, and the conductivity is improved.
This improvement in conductivity results in good antistatic properties.
【００２３】さらにまた、上層の低屈折率層の硬化収縮
の際に生じる膜の収縮応力が熱流動性により緩和される
ため、膜中の残留応力が減少して膜の強度が向上する。
しかし、膜中に存在するアルキル基の濃度が高過ぎる
と、膜自体の硬度が減少するので、その濃度は７〜３０
重量％が好ましい。Furthermore, since the shrinkage stress of the film generated when the upper low refractive index layer cures and shrinks is reduced by the thermal fluidity, the residual stress in the film is reduced and the strength of the film is improved.
However, if the concentration of the alkyl group present in the film is too high, the hardness of the film itself decreases, so that the concentration is 7 to 30.
% By weight is preferred.
【００２４】このようにして、高強度、かつ、高性能の
反射帯電防止膜を得ることができる。また、この反射帯
電防止膜をＣＲＴ，ＬＣＤ等の表示装置の表示パネルフ
ェース面に形成することにより、反射帯電防止特性の優
れた表示装置を提供することができる。Thus, a high-strength, high-performance reflective antistatic film can be obtained. In addition, by forming the anti-reflection film on the display panel face of a display device such as a CRT or LCD, a display device having excellent anti-reflection characteristics can be provided.
【００２５】[0025]
〔実施例 １〕テトラエトキシシラン、水、エタノー
ル、硝酸を、モル比で１：１２：４５：０.２５の割合
で混合し、４時間撹伴した。Example 1 Tetraethoxysilane, water, ethanol and nitric acid were mixed at a molar ratio of 1: 12: 45: 0.25 and stirred for 4 hours.
【００２６】次いで、この反応溶液にトリメチルシリル
クロライドをテトラエトキシシランに対して等モル量添
加し、５０℃で２時間反応させて前記シリコンアルコキ
シドを含むシリカゾル溶液を調製した。このシリカゾル
溶液は、低屈折率層のシリカ膜の作製に使用する。Next, trimethylsilyl chloride was added to this reaction solution in an equimolar amount to tetraethoxysilane, and the mixture was reacted at 50 ° C. for 2 hours to prepare a silica sol solution containing the silicon alkoxide. This silica sol solution is used for producing a silica film of a low refractive index layer.
【００２７】ＩＴＯ（Ｉndim Ｔin Ｏxide）超微粒子
（平均粒径５０〜５００Å）をエタノール、イソプロパ
ノール、メチルエチルケトンの５：３：２（容積比）の
溶液に分散し、濃度１重量％の分散液を調製した。この
ＩＴＯ分散液をガラス基板上（１０ｃｍ角）に１６０ｒ
ｐｍでスピンコートし、６０℃，５分間乾燥した。Ultrafine particles of ITO (Indim Tin Oxide) (average particle diameter: 50 to 500 °) are dispersed in a 5: 3: 2 (volume ratio) solution of ethanol, isopropanol, and methyl ethyl ketone to prepare a dispersion having a concentration of 1% by weight. did. This ITO dispersion is placed on a glass substrate (10 cm square) for 160 r.
pm, and dried at 60 ° C for 5 minutes.
【００２８】このＩＴＯ超微粒子層上に、前記シリカゾ
ル溶液を１６０ｒｐｍでスピンコートした。この積層膜
を１６０℃で３０分間熱処理した。The silica sol solution was spin-coated on this ITO ultrafine particle layer at 160 rpm. This laminated film was heat-treated at 160 ° C. for 30 minutes.
【００２９】上記積層膜の表面反射率は０.８％（５７
０ｎｍ）、表面抵抗は７×１０4Ω／□であった。The surface reflectance of the laminated film is 0.8% (57%).
0 nm), and the surface resistance was 7 × 10 4 Ω / □.
【００３０】また、この積層膜の表面の硬さは、消しゴ
ム試験法で３００回以上であった。通常、用いられてい
るシリカゾル（アルキル基を含まない）を同様な方法で
作製した膜の消しゴム試験結果は、約２００回であっ
た。The hardness of the surface of the laminated film was 300 times or more by the eraser test method. Ordinarily, the eraser test result of a film made of a silica sol (containing no alkyl group) used by the same method was about 200 times.
【００３１】なお、図１にガラス基板上に形成された反
射帯電防止膜の模式断面図を示す。本実施例品の表面４
は、従来品の表面５に比べてその平坦度は格段に優れて
いる。表面粗さＲａは、本実施例品ではＲａ＝１５０Å
であるのに対し、従来品ではＲａ＝２６０Åである。FIG. 1 is a schematic sectional view of a reflective antistatic film formed on a glass substrate. Surface 4 of product of this example
Is much better in flatness than the surface 5 of the conventional product. The surface roughness Ra is Ra = 150 ° in this embodiment.
On the other hand, Ra = 260 ° in the conventional product.
【００３２】上記のガラス基板上に作製したものと同様
な手法により、シリコンウエハ（直径３インチ）上に成
膜して、シリコンウエハの変形反り量から膜の残留応力
を求めた。A film was formed on a silicon wafer (3 inches in diameter) by the same method as that formed on the above glass substrate, and the residual stress of the film was determined from the amount of warpage of the silicon wafer.
【００３３】本実施例による膜の残留応力は５ｄｙｎ／
ｃｍ2であり、従来のシリカゾルを用いた膜の４０ｄｙ
ｎ／ｃｍ2と比べ、格段にり小く、膜中の残留応力が小
さいことから膜の強度が向上していることが分かる。な
お、上層のシリカ膜の元素分析を行なった結果は、アル
キル基のＣＨ濃度が１１.０％であった。The residual stress of the film according to this embodiment is 5 dyn /
cm 2 , and 40 dy of the film using the conventional silica sol.
Compared to n / cm 2 , the film is much smaller and the residual stress in the film is small, indicating that the strength of the film is improved. The result of elemental analysis of the upper silica film showed that the CH concentration of the alkyl group was 11.0%.
【００３４】上記ＩＴＯの他にＳｎＯ2，ＺｎＯの超微
粒子を用いても、同様に帯電防止機能のある膜が得られ
た。When ultrafine particles of SnO 2 and ZnO were used in addition to the above ITO, a film having an antistatic function was similarly obtained.
【００３５】〔実施例 ２〕前記式〔１〕で示されるシ
リコンアルコキシドのアルキル基の種類と、その濃度が
及ぼす膜強度並びに膜平坦度を調べた結果を表１に示
す。なお、使用したシリコンアルコキシドは、それぞれ
のアルキル基が置換されたシリコンエトキシドを実施例
１と同様にして作製し、実施例１と同様にして反射帯電
防止膜を形成し、測定した。Example 2 Table 1 shows the results of investigation on the type of the alkyl group of the silicon alkoxide represented by the formula [1] and the film strength and film flatness exerted by the concentration. As the silicon alkoxide used, silicon ethoxide in which each alkyl group was substituted was produced in the same manner as in Example 1, and a reflection antistatic film was formed and measured in the same manner as in Example 1.
【００３６】上記の膜強度は消しゴム試験で３００回以
上を○、２００回未満を×で示した。また、表面平坦度
は、表面粗さＲａが＝１５０Å以上を○、１５０Å未満
〜１００Åを△、１００未満を×で示した。The above-mentioned film strength was evaluated as ○ in 300 times or more and × in less than 200 times in the eraser test. The surface flatness was indicated by ○ when the surface roughness Ra was equal to or more than 150 °, Δ when the surface roughness was less than 150 ° to 100 °, and × when the surface roughness was less than 100.
【００３７】表から分かるように、アルキル基のいずれ
も７〜３０重量％の範囲が膜強度の上から望ましく、膜
平坦度では７〜１０重量％の範囲が好ましい。As can be seen from the table, the range of 7 to 30% by weight of any of the alkyl groups is desirable from the viewpoint of film strength, and the range of 7 to 10% by weight is preferable in terms of film flatness.
【００３８】[0038]
【表１】 [Table 1]
【００３９】〔実施例 ３〕実施例１で調製したシリカ
ゾル液およびＩＴＯ分散液を用いて、１７インチ陰極線
管（ＣＲＴ）のパネル面に、実施例１と同様な方法によ
り反射帯電防止膜を形成した。Example 3 A reflection antistatic film was formed on the panel surface of a 17-inch cathode ray tube (CRT) in the same manner as in Example 1 using the silica sol solution and the ITO dispersion prepared in Example 1. did.
【００４０】図２は、電子銃６、パネルガラス７、帯電
防止膜８、シリカ膜９を有するＣＲＴの模式断面図であ
る。FIG. 2 is a schematic sectional view of a CRT having an electron gun 6, a panel glass 7, an antistatic film 8, and a silica film 9.
【００４１】１７インチＣＲＴのパネルガラス７を１６
０ｒｐｍで回転しておき、この上にＩＴＯ分散液１００
ｍｌを滴下してスピンコートした。次いで、６０℃で５
分間乾燥した。The panel glass 7 of the 17-inch CRT
It is rotated at 0 rpm, and the ITO dispersion 100
ml was dropped and spin-coated. Then at 60 ° C. for 5
Dried for minutes.
【００４２】このＩＴＯ超微粒子層の上に、先に調製し
たシリカゾル溶液を１００ｍｌを滴下し、１６０ｒｐｍ
でスピンコートし積層膜を形成し、これを１６０℃で３
０分間熱処理した。この膜の表面反射率は０.９％（５
７０ｎｍ）、表面抵抗は９×１０4Ω／□であった。ま
た、膜の強度，平坦性は実施例１で作製したものと同等
であった。On this ITO ultrafine particle layer, 100 ml of the silica sol solution prepared above was dropped, and 160 rpm
To form a laminated film, which is
Heat treated for 0 minutes. The surface reflectance of this film is 0.9% (5
70 nm) and the surface resistance was 9 × 10 4 Ω / □. The strength and flatness of the film were the same as those manufactured in Example 1.
【００４３】ＣＲＴパネル面上に形成した本発明の反射
帯電防止膜は、膜表面の反射率の変動もなく良好なもの
が得られた。The reflection-preventing antistatic film of the present invention formed on the CRT panel surface was excellent without a change in the reflectance of the film surface.
【００４４】〔実施例 ４〕実施例１で調製したシリカ
ゾル液およびＩＴＯ分散液を用いて、液晶表示装置（Ｌ
ＣＤ）のパネル面上に、実施例１と同様な方法により反
射帯電防止膜を形成した。Example 4 A liquid crystal display (L) was prepared using the silica sol liquid and the ITO dispersion prepared in Example 1.
A reflective antistatic film was formed on the panel surface of CD) in the same manner as in Example 1.
【００４５】図３は、反射防止膜１０、帯電防止膜１
１、偏光膜１２、カラス基板１３、カラーフィルタ１
４、有機保護膜１５、透明導電膜１６、層間絶縁膜１
７、配向膜１８、および、液晶１９を有するＬＣＤパネ
ルの模式断面図である。ＬＣＤパネルは液晶１９の配向
を電界で変化させ、反射光またはバックライトからの出
射光を変調させて表示を行うものである。FIG. 3 shows the antireflection film 10 and the antistatic film 1.
1, polarizing film 12, crow substrate 13, color filter 1
4, organic protective film 15, transparent conductive film 16, interlayer insulating film 1
FIG. 7 is a schematic cross-sectional view of an LCD panel having an alignment film, an alignment film, and a liquid crystal. The LCD panel performs display by changing the orientation of the liquid crystal 19 with an electric field and modulating reflected light or light emitted from a backlight.
【００４６】ＬＣＤパネルには有機物からなる偏光膜１
２が形成されているため、熱処理温度は９０℃で３０分
間とした。The LCD panel has a polarizing film 1 made of an organic material.
Since No. 2 was formed, the heat treatment temperature was 90 ° C. for 30 minutes.
【００４７】この膜の表面反射率は１.１％（５７０ｎ
ｍ）、表面抵抗は４×１０5Ω／□であった。また、膜
の強度，平坦性は実施例１で作製したものと同等であっ
た。The surface reflectance of this film is 1.1% (570 n
m), and the surface resistance was 4 × 10 5 Ω / □. The strength and flatness of the film were the same as those manufactured in Example 1.
【００４８】ＬＣＤパネル面上に形成した本発明の反射
帯電防止膜は、膜表面の反射率の変動もなく良好なもの
が得られた。The reflection-preventing antistatic film of the present invention formed on the LCD panel surface was excellent without a change in the reflectance of the film surface.
【００４９】[0049]
【発明の効果】本発明によれば、高強度、かつ、膜平坦
性の優れた反射帯電防止膜を提供することができる。ま
た、この反射帯電防止膜をＣＲＴ，ＬＣＤの表示パネル
面に形成することにより、高性能な表示装置を提供する
ことができる。According to the present invention, a reflective antistatic film having high strength and excellent film flatness can be provided. Further, by forming the reflection antistatic film on the display panel surface of a CRT or LCD, a high-performance display device can be provided.
【図１】ガラス基板上に形成された反射帯電防止膜の模
式断面図である。FIG. 1 is a schematic sectional view of a reflective antistatic film formed on a glass substrate.
【図２】本発明の陰極線管の模式断面図である。FIG. 2 is a schematic sectional view of a cathode ray tube of the present invention.
【図３】本発明の液晶表示装置の模式断面図である。FIG. 3 is a schematic sectional view of the liquid crystal display device of the present invention.
【符号の説明】 １…ガラス基板、２…ＩＴＯ超微粒子、３…シリカ膜、
４…本実施例品の表面、５…従来品の表面、６…電子
銃、７…パネルガラス、８…帯電防止膜、９…シリカ
膜、１０…反射防止膜、１２…偏光膜、１４…カラーフ
ィルタ、１５…有機保護膜、１６…透明導電膜、１７…
層間絶縁膜、１８…配向膜、１９…液晶。[Explanation of Symbols] 1 ... glass substrate, 2 ... ultrafine ITO particles, 3 ... silica film,
4: Surface of the product of this embodiment, 5: Surface of conventional product, 6: Electron gun, 7: Panel glass, 8: Antistatic film, 9: Silica film, 10: Antireflection film, 12: Polarizing film, 14 ... Color filter, 15: Organic protective film, 16: Transparent conductive film, 17:
Interlayer insulating film, 18: alignment film, 19: liquid crystal.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｇ０９Ｆ 9/00 Ｈ０１Ｊ 29/88 Ｈ０１Ｊ 29/88 Ｇ０２Ｂ 1/10 Ａ (72)発明者 高橋 研 茨城県日立市大みか町七丁目１番１号 株 式会社日立製作所日立研究所内 (72)発明者 内山 則和 千葉県茂原市早野3300番地 株式会社日立 製作所電子デバイス事業部内 (72)発明者 西沢 昌紘 千葉県茂原市早野3300番地 株式会社日立 製作所電子デバイス事業部内 (72)発明者 東條 利雄 千葉県茂原市早野3681番地 日立デバイス エンジニアリング株式会社内──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification code FI G09F 9/00 H01J 29/88 H01J 29/88 G02B 1/10 A (72) Inventor Ken Takahashi 7-chome, Omika-cho, Hitachi City, Ibaraki Prefecture No. 1-1 Inside Hitachi, Ltd.Hitachi Research Laboratories (72) Inventor Noriuchi Uchiyama 3300 Hayano Mobara-shi, Chiba Pref.Electronic Devices Division, Hitachi, Ltd. (72) Inventor Masahiro Nishizawa 3300 Hayano Mobara-shi, Chiba Hitachi, Ltd.Electronic Device Division (72) Inventor Toshio Tojo 3681 Hayano, Mobara-shi, Chiba Hitachi Device Engineering Co., Ltd.
Claims (8)
される反射帯電防止膜であって、該反射帯電防止膜が導
電性の超微粒子粉末を含み透明な帯電防止層の上に、Ｓ
ｉ骨格に低級アルキル基が直結した式〔１〕 【化１】 Ｒ3−Ｓｉ−ＣnＨ2n+1 …〔１〕 （式中、Ｒはアルコキシ基、ｎは１〜４の整数）で示さ
れるシリコンアルコキシドを含むシリカゾル溶液から形
成され、前記帯電防止層よりも低屈折率の低屈折率層が
積層されており、 前記低屈折率層中のアルキル基の濃度が７〜３０重量％
であることを特徴とする反射帯電防止膜。1. A reflective antistatic film formed on a face of a display panel of a display device, wherein the reflective antistatic film contains conductive ultrafine particles and is formed on a transparent antistatic layer.
i skeleton lower alkyl group is directly bonded formula (1) ## STR1 ## R 3 -Si-C n H 2n + 1 ... [1] (wherein, R represents an alkoxy radical, n is an integer from 1 to 4) in A low-refractive-index layer having a lower refractive index than the antistatic layer is formed by laminating a silica sol solution containing the silicon alkoxide shown in the following, and the concentration of the alkyl group in the low-refractive index layer is 7 to 30% by weight.
A reflective antistatic film, characterized in that:
がＩｎ2Ｏ3，ＳｎＯ2またはＺｎＯである請求項１に記
載の反射帯電防止膜。2. The antistatic anti-reflection film according to claim 1, wherein the conductive ultrafine particle powder of the high refractive index layer is In 2 O 3 , SnO 2 or ZnO.
の残留応力が５ｄｙｎ／ｃｍ2以下である請求項１に記
載の反射帯電防止膜。3. The reflective antistatic film according to claim 1, wherein the residual stress of the film in the low refractive index layer of the reflective antistatic film is 5 dyn / cm 2 or less.
２５０Ａ以下である請求項１に記載の反射帯電防止膜。4. The surface roughness of the reflection antistatic film is Ra =
The reflective antistatic film according to claim 1, wherein the thickness is 250 A or less.
り表示を行う表示装置において、 前記表示装置の表示パネルフェース面に、導電性の超微
粒子粉末を含み透明な帯電防止層の上に、Ｓｉ骨格に低
級アルキル基が直結した式〔１〕 【化２】 Ｒ3−Ｓｉ−ＣnＨ2n+1 …〔１〕 （式中、Ｒはアルコキシ基、ｎは１〜４の整数）で示さ
れるシリコンアルコキシドを含むシリカゾル溶液から形
成され、前記帯電防止層よりも低屈折率の低屈折率層が
積層されており、 前記低屈折率層中のアルキル基の濃度が７〜３０重量％
である反射帯電防止膜を設けたことを特徴とする表示装
置。5. A display device which performs display by modulating outgoing light or reflected light, wherein a surface of a display panel of the display device includes a conductive anti-fine particle powder, a transparent antistatic layer, Formula (1) in which a lower alkyl group is directly bonded to the skeleton: R 3 —Si—C n H 2n + 1 (1) (wherein R is an alkoxy group, and n is an integer of 1 to 4). A low-refractive-index layer having a lower refractive index than the antistatic layer is formed from a silica sol solution containing silicon alkoxide, and the concentration of the alkyl group in the low-refractive index layer is 7 to 30% by weight.
A display device provided with a reflective antistatic film as described above.
が、Ｉｎ2Ｏ3，ＳｎＯ2またはＺｎＯである請求項５に
記載の表示装置。6. The display device according to claim 5, wherein the conductive ultrafine particle powder of the high refractive index layer is In 2 O 3 , SnO 2 or ZnO.
の残留応力が５ｄｙｎ／ｃｍ2以下である請求項５に記
載の表示装置。7. The display device according to claim 5, wherein the residual stress of the film in the low-refractive-index layer of the reflective antistatic film is 5 dyn / cm 2 or less.
２５０Ａ以下である請求項５に記載の表示装置。8. The surface roughness of the reflective antistatic film is Ra =
The display device according to claim 5, wherein the display device is 250 A or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8258727A JPH10104402A (en) | 1996-09-30 | 1996-09-30 | Reflection antistatic film and display device using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8258727A JPH10104402A (en) | 1996-09-30 | 1996-09-30 | Reflection antistatic film and display device using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10104402A true JPH10104402A (en) | 1998-04-24 |
Family
ID=17324255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8258727A Pending JPH10104402A (en) | 1996-09-30 | 1996-09-30 | Reflection antistatic film and display device using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10104402A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000011267A (en) * | 1998-07-24 | 2000-02-25 | 김영남 | Screen display faceplate on which conductive organic polymeric transparent anti-static film is formed, its solution and its manufacturing method |
| JP2005266782A (en) * | 2004-02-16 | 2005-09-29 | Fuji Photo Film Co Ltd | Antireflection film, polarizing plate using the same, image display device using them, and method for producing antireflection film |
| US7557885B2 (en) | 2003-02-07 | 2009-07-07 | Fujifilm Corporation | Display and display system for medical use |
-
1996
- 1996-09-30 JP JP8258727A patent/JPH10104402A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000011267A (en) * | 1998-07-24 | 2000-02-25 | 김영남 | Screen display faceplate on which conductive organic polymeric transparent anti-static film is formed, its solution and its manufacturing method |
| US7557885B2 (en) | 2003-02-07 | 2009-07-07 | Fujifilm Corporation | Display and display system for medical use |
| JP2005266782A (en) * | 2004-02-16 | 2005-09-29 | Fuji Photo Film Co Ltd | Antireflection film, polarizing plate using the same, image display device using them, and method for producing antireflection film |
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