JPH0997890A - Solid-state image pickup device and manufacture thereof - Google Patents
Solid-state image pickup device and manufacture thereofInfo
- Publication number
- JPH0997890A JPH0997890A JP7254979A JP25497995A JPH0997890A JP H0997890 A JPH0997890 A JP H0997890A JP 7254979 A JP7254979 A JP 7254979A JP 25497995 A JP25497995 A JP 25497995A JP H0997890 A JPH0997890 A JP H0997890A
- Authority
- JP
- Japan
- Prior art keywords
- film
- light
- receiving portion
- light receiving
- interlayer insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000011229 interlayer Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 39
- 238000005530 etching Methods 0.000 claims abstract description 21
- 230000001681 protective effect Effects 0.000 claims abstract description 20
- 238000001039 wet etching Methods 0.000 claims abstract description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 238000003384 imaging method Methods 0.000 claims description 15
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 6
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 3
- BHZSLLSDZFAPFH-UHFFFAOYSA-L palladium(2+);difluoride Chemical compound F[Pd]F BHZSLLSDZFAPFH-UHFFFAOYSA-L 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 8
- 230000003667 anti-reflective effect Effects 0.000 abstract 3
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、反射防止膜を設け
ることにより受光部上の反射光を少なくする固体撮像素
子及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device which reduces an amount of reflected light on a light receiving portion by providing an antireflection film, and a manufacturing method thereof.
【０００２】[0002]
【従来の技術】現在、固体撮像素子としては種々のもの
が提案ないし実用化されており、固体撮像素子の信号の
読み出しにＣＣＤ（電荷結合素子）を用いた固体撮像素
子が主流となっている。また、上記ＣＣＤ型の固体撮像
素子の中でも、インターライン転送型が一般的である。
ＣＣＤ型は、入射光を受光部で信号電荷に変換しＣＣＤ
で信号電荷を読み出し、電荷転送をしている。また、固
体撮像素子は高解像度化と光学システム系の小型化のた
めに、固体撮像素子の高画素化及び小型化が進んでい
る。2. Description of the Related Art Currently, various solid-state image pickup devices have been proposed or put into practical use, and solid-state image pickup devices using a CCD (charge coupled device) for reading out signals from the solid-state image pickup device have become mainstream. . Among the CCD type solid-state image pickup devices, the interline transfer type is generally used.
The CCD type converts the incident light into a signal charge at the light receiving part, and the CCD
The signal charges are read out by and the charges are transferred. In addition, the solid-state image sensor has been made higher in pixel size and smaller in size due to higher resolution and smaller optical system system.
【０００３】図３は従来の固体撮像素子の構成を示す断
面図である。ｐ型シリコン基板３１の上に受光部３２を
形成し熱酸化により絶縁膜を成長させ、化学的気相蒸着
法（Chemical Vapor Deposition、ＣＶＤ）によりゲー
ト電極３３を成長させレジストパターンを形成し、エッ
チングによりパターン形成を行う。その後、熱酸化もし
くはＣＶＤにより層間絶縁膜３４を形成し、スパッタに
より金属遮光膜３５を成長させエッチングにより受光部
３２上に開口領域を形成する。FIG. 3 is a sectional view showing the structure of a conventional solid-state image pickup device. A light receiving portion 32 is formed on the p-type silicon substrate 31, an insulating film is grown by thermal oxidation, a gate electrode 33 is grown by a chemical vapor deposition (Chemical Vapor Deposition, CVD) method, a resist pattern is formed, and etching is performed. To form a pattern. Then, an interlayer insulating film 34 is formed by thermal oxidation or CVD, a metal light shielding film 35 is grown by sputtering, and an opening region is formed on the light receiving portion 32 by etching.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上記従
来の固体撮像素子では、高画素化及びチップサイズの小
型化のために受光部の面積が減少し、感度が低下すると
いう問題がある。すなわち従来の固体撮像素子は受光部
３２上の保護膜３６を透過した光が受光部３２に入射し
て信号電荷を発生しているが保護膜３６と受光部３２の
界面では、シリコン酸化膜３４とシリコン基板３１との
屈折率の差による界面での反射により、受光部３２への
透過光を低減させている。そのため、受光部３２への入
射光が低下し感度特性が劣化している。However, the above-mentioned conventional solid-state image pickup device has a problem that the area of the light receiving portion is reduced and the sensitivity is lowered due to the increase in the number of pixels and the reduction in chip size. That is, in the conventional solid-state imaging device, the light transmitted through the protective film 36 on the light receiving portion 32 is incident on the light receiving portion 32 to generate a signal charge, but at the interface between the protective film 36 and the light receiving portion 32, the silicon oxide film 34 is formed. The light transmitted to the light receiving section 32 is reduced by reflection at the interface due to the difference in refractive index between the silicon substrate 31 and the silicon substrate 31. Therefore, the incident light on the light receiving unit 32 is reduced and the sensitivity characteristic is deteriorated.
【０００５】本発明は、前記課題を解決するため、受光
部の金属遮光膜で規定される開口面積を変えることなく
感度特性を向上させた固体撮像素子を提供することを目
的とする。In order to solve the above-mentioned problems, it is an object of the present invention to provide a solid-state image pickup device having improved sensitivity characteristics without changing the opening area defined by the metal light-shielding film of the light receiving portion.
【０００６】[0006]
【課題を解決するための手段】前記目的を達成するた
め、本発明の固体撮像素子は、シリコン基板と、前記基
板内に設けられた受光部と、前記基板及び受光部の上に
形成された層間絶縁膜と、前記層間絶縁膜と基板との間
に形成されたゲート電極と、前記層間絶縁膜の上に形成
され前記受光部の上に少なくとも１つの開口部を有する
金属遮光膜と、前記金属遮光膜の上に形成された保護膜
を備えた固体撮像素子において、前記受光部のシリコン
基板と層間絶縁膜との界面に反射防止膜を存在させたこ
とを特徴とする。前記構成においては、反射防止膜が、
受光部の上、かつ金属遮光膜の開口部の下に存在するこ
とが好ましい。In order to achieve the above-mentioned object, a solid-state image pickup device of the present invention comprises a silicon substrate, a light receiving portion provided in the substrate, and the substrate and the light receiving portion. An interlayer insulating film, a gate electrode formed between the interlayer insulating film and a substrate, a metal light-shielding film formed on the interlayer insulating film and having at least one opening on the light receiving portion, In a solid-state imaging device having a protective film formed on a metal light-shielding film, an antireflection film is present at the interface between the silicon substrate of the light receiving section and the interlayer insulating film. In the above structure, the antireflection film is
It is preferably present above the light receiving portion and below the opening of the metal light shielding film.
【０００７】前記構成においては、反射防止膜が、基板
の上、かつ金属遮光膜の下に存在することが好ましい。
また前記構成においては、反射防止膜が酸化セリウムま
たはフッ化パラジウムからなることが好ましい。In the above structure, the antireflection film is preferably present on the substrate and under the metal light shielding film.
Further, in the above structure, the antireflection film is preferably made of cerium oxide or palladium fluoride.
【０００８】また前記構成においては、反射防止膜が５
０〜２００ｎｍの厚さを有することが好ましい。また前
記構成においては、反射防止膜が屈折率１．９５〜２．
２を有することが好ましい。In the above structure, the antireflection film is 5
It preferably has a thickness of 0 to 200 nm. In the above structure, the antireflection film has a refractive index of 1.95 to 2.
It is preferable to have 2.
【０００９】次に本発明の第一の固体撮像素子の製造方
法は、シリコン基板と、前記基板内に設けられた受光部
と、前記基板及び受光部の上に形成された層間絶縁膜
と、前記層間絶縁膜と基板との間に形成されたゲート電
極と、前記層間絶縁膜の上に形成され前記受光部の上に
少なくとも１つの開口部を有する金属遮光膜と、前記金
属遮光膜の上に形成された保護膜を備えた固体撮像素子
を製造する方法において、前記金属遮光膜のパターン形
成を行った後、前記受光部の上の層間絶縁膜をエッチン
グによって除去し、除去した部分に化学気相法またはイ
オンビームスパッタ法により反射防止膜を形成した後に
保護膜を形成することを特徴とする。Next, a first method for manufacturing a solid-state image pickup device according to the present invention comprises a silicon substrate, a light receiving portion provided in the substrate, an interlayer insulating film formed on the substrate and the light receiving portion. A gate electrode formed between the interlayer insulating film and the substrate, a metal light-shielding film formed on the interlayer insulating film and having at least one opening on the light receiving portion, and on the metal light-shielding film. In the method for manufacturing a solid-state imaging device having a protective film formed on, a pattern of the metal light-shielding film is formed, an interlayer insulating film on the light receiving portion is removed by etching, and the removed portion is chemically removed. It is characterized in that the protective film is formed after the antireflection film is formed by the vapor phase method or the ion beam sputtering method.
【００１０】本発明の第二の製造方法は、シリコン基板
と、前記基板内に設けられた受光部と、前記基板の上に
形成された層間絶縁膜と、前記層間絶縁膜の上に形成さ
れたゲート電極と、前記層間絶縁膜の上に形成され前記
受光部の上に少なくとも１つの開口部を有する金属遮光
膜と、前記金属遮光膜の上に形成された保護膜を備えた
固体撮像素子を製造する方法において、前記受光部の上
の層間絶縁膜をエッチングによって除去し、前記ゲート
電極及び受光部の上に化学気相法またはイオンビームス
パッタ法により反射防止膜を形成し、前記反射防止膜の
上に金属遮光膜を形成しパターン形成を行った後、前記
金属遮光膜及び反射防止膜の上に保護膜を形成すること
を特徴とする。前記構成においては、エッチングがウエ
ットエッチングであることが好ましい。According to a second manufacturing method of the present invention, a silicon substrate, a light receiving portion provided in the substrate, an interlayer insulating film formed on the substrate, and an interlayer insulating film formed on the interlayer insulating film are formed. Solid-state imaging device including a gate electrode, a metal light-shielding film formed on the interlayer insulating film and having at least one opening on the light-receiving portion, and a protective film formed on the metal light-shielding film. In the method of manufacturing the above method, the interlayer insulating film on the light receiving portion is removed by etching, and an antireflection film is formed on the gate electrode and the light receiving portion by a chemical vapor deposition method or an ion beam sputtering method. A metal light-shielding film is formed on the film and a pattern is formed, and then a protective film is formed on the metal light-shielding film and the antireflection film. In the above structure, the etching is preferably wet etching.
【００１１】[0011]
【発明の実施の形態】前記本発明の固体撮像素子によれ
ば、シリコン基板と、前記基板内に設けられた受光部
と、前記基板及び受光部の上に形成された層間絶縁膜
と、前記層間絶縁膜と基板との間に形成されたゲート電
極と、前記層間絶縁膜の上に形成され前記受光部の上に
少なくとも１つの開口部を有する金属遮光膜と、前記金
属遮光膜の上に形成された保護膜を備えた固体撮像素子
において、前記受光部のシリコン基板と層間絶縁膜との
界面に反射防止膜を存在させたことにより、シリコン酸
化膜とシリコン基板との界面で発生していた反射光を従
来の層間絶縁膜に比べ屈折率を上げることで界面での反
射光を大幅に抑えることにより、受光部への透過光を増
加させ金属遮光膜で規定される開口面積を変えることな
く感度特性を向上させることができる。反射防止膜を存
在させる位置は、受光部の上で、かつ金属遮光膜の開口
部の下の位置、または基板の上で、かつ金属遮光膜の下
であって、すなわちゲート電極を覆うように存在させて
もよい。BEST MODE FOR CARRYING OUT THE INVENTION According to the solid-state imaging device of the present invention, a silicon substrate, a light receiving portion provided in the substrate, an interlayer insulating film formed on the substrate and the light receiving portion, A gate electrode formed between the interlayer insulating film and the substrate, a metal light-shielding film formed on the interlayer insulating film and having at least one opening on the light receiving portion, and on the metal light-shielding film. In the solid-state imaging device having the formed protective film, an antireflection film is present at the interface between the silicon substrate of the light receiving part and the interlayer insulating film, so that it is generated at the interface between the silicon oxide film and the silicon substrate. By increasing the refractive index of the reflected light compared to the conventional interlayer insulating film, the reflected light at the interface is significantly suppressed, and the transmitted light to the light receiving part is increased and the aperture area defined by the metal light shielding film is changed. Without improving the sensitivity characteristics It is possible. The position where the antireflection film is present is above the light receiving portion and below the opening of the metal light shielding film, or above the substrate and below the metal light shielding film, that is, so as to cover the gate electrode. May be present.
【００１２】次に本発明の製造方法によれば、前記本発
明の装置を効率よく合理的に製造できる。Next, according to the manufacturing method of the present invention, the device of the present invention can be manufactured efficiently and rationally.
【００１３】[0013]
【実施例】以下実施例を用いて本発明を具体的に説明す
る。 （実施例１）図１は本実施例の固体撮像素子の構成を示
す断面図である。ｐ型シリコン基板１の上にｎ型不純物
領域である受光部２をイオン注入により形成し、熱酸化
により厚さ１００ｎｍの絶縁膜４を成長させ、ＣＶＤに
よりポリシリコンからなる厚さ４００ｎｍのゲート電極
３を成長させレジストパターン形成を行い、エッチング
によりパターン形成を行う。その後、熱酸化により層間
絶縁膜４を形成し、スパッタによりアルミからなる厚さ
８００ｎｍの金属遮光膜５を成長させエッチングにより
受光部２上に開口領域を形成する。反射防止膜７を形成
するために金属遮光膜５のパターン形成を行った後、受
光部上の層間絶縁膜４を除去するためにレジストパター
ン形成を行いエッチングを行う。受光部にプラズマダメ
ージを与えないために、エッチングはウェットエッチン
グで行う。ここでウェットエッチングとは、フッ化水素
酸水溶液によるエッチングをいう。ウェットエッチング
により受光部２上の層間絶縁膜４を除去した後、ＣＶＤ
により屈折率が２．２の酸化セリウムからなる反射防止
膜を５０〜２００ｎｍの厚さに成長させる。受光部上に
のみ反射防止膜７を形成するために、反射防止膜とエッ
チングレートが近いレジストを表面塗布し受光部上をレ
ジストで平坦化しエッチングを行い受光部以外の反射防
止膜を除去する（エッチバック法）。エッチングは受光
部にプラズマダメージを与えないため、また金属遮光膜
に対して選択比が高くなるようにウェットエッチングで
行う。これにより反射防止膜を除去した後、材料ＳｉＯ
2 を用いてＣＶＤにより厚さ４００ｎｍの保護膜６を形
成する。保護膜６の屈折率は１．４５である。受光部へ
の入射光量は保護膜６の厚さに影響されない。The present invention will be specifically described below with reference to examples. (Embodiment 1) FIG. 1 is a sectional view showing a structure of a solid-state image pickup device of this embodiment. A light receiving portion 2 which is an n type impurity region is formed on a p type silicon substrate 1 by ion implantation, an insulating film 4 having a thickness of 100 nm is grown by thermal oxidation, and a gate electrode made of polysilicon and having a thickness of 400 nm is grown. 3 is grown to form a resist pattern, and the pattern is formed by etching. After that, an interlayer insulating film 4 is formed by thermal oxidation, a metal light shielding film 5 made of aluminum and having a thickness of 800 nm is grown, and an opening region is formed on the light receiving portion 2 by etching. After patterning the metal light-shielding film 5 to form the antireflection film 7, a resist pattern is formed and etching is performed to remove the interlayer insulating film 4 on the light receiving portion. In order to prevent plasma damage to the light receiving portion, the etching is wet etching. Here, wet etching refers to etching with a hydrofluoric acid aqueous solution. After removing the interlayer insulating film 4 on the light receiving portion 2 by wet etching, CVD
Thus, an antireflection film made of cerium oxide having a refractive index of 2.2 is grown to a thickness of 50 to 200 nm. In order to form the antireflection film 7 only on the light receiving portion, a resist having an etching rate close to that of the antireflection film is applied on the surface, and the light receiving portion is flattened with the resist and etched to remove the antireflection film other than the light receiving portion ( Etch back method). The etching does not cause plasma damage to the light receiving portion, and is performed by wet etching so that the selection ratio is high with respect to the metal light shielding film. After removing the antireflection film by this, the material SiO
2 Is used to form a protective film 6 having a thickness of 400 nm by CVD. The refractive index of the protective film 6 is 1.45. The amount of light incident on the light receiving portion is not affected by the thickness of the protective film 6.
【００１４】本実施例の装置によれば、絶縁膜と受光部
との界面で発生していた反射光を抑え、受光部への入射
光量を増やし、感度特性を従来例と比べ約１５〜２０％
向上させることが可能である。According to the apparatus of this embodiment, the reflected light generated at the interface between the insulating film and the light receiving portion is suppressed, the amount of light incident on the light receiving portion is increased, and the sensitivity characteristic is about 15 to 20 as compared with the conventional example. %
It is possible to improve.
【００１５】（実施例２）図２は本実施例の固体撮像素
子の構成を示す断面図である。本実施例の金属遮光膜下
の層間絶縁膜に反射防止膜を形成する製造方法を図２を
参照しながら説明する。ｐ型シリコン基板２１の上に実
施例１と同様の方法で受光部２２を形成し、熱酸化によ
り厚さ１００ｎｍの絶縁膜２４を成長させ、ＣＶＤによ
りポリシリコンからなる厚さ４００ｎｍのゲート電極２
３を成長させ、レジストパターン形成を行いエッチング
によりパターン形成を行う。その後、受光部上の酸化膜
を除去するためにレジストパターン形成を行い、エッチ
ングにより酸化膜を除去する。エッチングは受光部にプ
ラズマダメージを与えないためにウェットエッチングで
行う。金属遮光膜形成前の層間絶縁膜２７にイオンビー
ムスパッタ（ＩＢＳ）法により屈折率１．９５のフッ化
パラジウムからなる層間絶縁膜２７を５０〜２００ｎｍ
の厚さに反射防止膜として形成する。その後、アルミを
用いてスパッタにより厚さ８００ｎｍの金属遮光膜２５
を成長させエッチングにより受光部２２上に開口領域を
形成する。その後、材料ＳｉＯ2 を用いてＣＶＤにより
厚さ４００ｎｍの保護膜２６を形成する。受光部への入
射光量は保護膜６の厚さに影響されない。(Embodiment 2) FIG. 2 is a sectional view showing the structure of the solid-state image pickup device of this embodiment. A manufacturing method of forming an antireflection film on the interlayer insulating film under the metal light-shielding film of this embodiment will be described with reference to FIG. The light receiving portion 22 is formed on the p-type silicon substrate 21 by the same method as in the first embodiment, the insulating film 24 having a thickness of 100 nm is grown by thermal oxidation, and the gate electrode 2 made of polysilicon and having a thickness of 400 nm is formed.
3 is grown, a resist pattern is formed, and a pattern is formed by etching. Then, a resist pattern is formed to remove the oxide film on the light receiving portion, and the oxide film is removed by etching. The etching is performed by wet etching in order to prevent plasma damage to the light receiving portion. An interlayer insulating film 27 made of palladium fluoride having a refractive index of 1.95 is formed on the interlayer insulating film 27 before forming the metal light-shielding film by an ion beam sputtering (IBS) method to a thickness of 50 to 200 nm.
To form an antireflection film. After that, a metal light shielding film 25 having a thickness of 800 nm is sputtered using aluminum.
Are grown and an opening region is formed on the light receiving portion 22 by etching. After that, a protective film 26 having a thickness of 400 nm is formed by CVD using the material SiO 2 . The amount of light incident on the light receiving portion is not affected by the thickness of the protective film 6.
【００１６】本実施例の装置によれば、絶縁膜と受光部
との界面で発生していた反射光を抑え、受光部への入射
光量を増やし、装置の感度特性を従来例と比べ約１５〜
２０％向上させることが可能である。According to the device of this embodiment, the reflected light generated at the interface between the insulating film and the light receiving part is suppressed, the amount of light incident on the light receiving part is increased, and the sensitivity characteristic of the device is about 15 compared with the conventional example. ~
It is possible to improve by 20%.
【００１７】なお、上記実施例でのレジストはポジ型、
ネガ型のどちらでもよい。The resist in the above embodiment is a positive type,
Either negative type may be used.
【００１８】[0018]
【発明の効果】以上説明した通り、本発明によれば金属
遮光膜で規定する開口面積を変えることなく感度特性を
向上させた固体撮像素子を提供できる。As described above, according to the present invention, it is possible to provide a solid-state image pickup device having improved sensitivity characteristics without changing the opening area defined by the metal light shielding film.
【図１】 本発明の実施例１の固体撮像素子の構成を示
す断面図FIG. 1 is a sectional view showing a configuration of a solid-state image sensor according to a first embodiment of the present invention.
【図２】 本発明の実施例２の固体撮像素子の構成を示
す断面図FIG. 2 is a cross-sectional view showing the configuration of a solid-state image sensor according to a second embodiment of the present invention.
【図３】 従来の固体撮像素子の構成を示す断面図FIG. 3 is a cross-sectional view showing the configuration of a conventional solid-state image sensor.
１、２１、３１ ｐ型シリコン基板 ２、２２、３２ 受光部（ｎ型不純物拡散層） ３、２３、３３ ゲート電極 ４、２４、３４ 層間絶縁膜 ５、２５、３５ 金属遮光膜 ６、２６、３６ 保護膜 ７、２７ 反射防止膜 1, 21, 31 p-type silicon substrate 2, 22, 32 light receiving part (n-type impurity diffusion layer) 3, 23, 33 gate electrode 4, 24, 34 interlayer insulating film 5, 25, 35 metal light-shielding film 6, 26, 36 Protective film 7, 27 Anti-reflection film
Claims (9)
た受光部と、前記基板及び受光部の上に形成された層間
絶縁膜と、前記層間絶縁膜と基板との間に形成されたゲ
ート電極と、前記層間絶縁膜の上に形成され前記受光部
の上に少なくとも１つの開口部を有する金属遮光膜と、
前記金属遮光膜の上に形成された保護膜を備えた固体撮
像素子において、前記受光部のシリコン基板と層間絶縁
膜との界面に反射防止膜を存在させたことを特徴とする
固体撮像素子。1. A silicon substrate, a light receiving portion provided in the substrate, an interlayer insulating film formed on the substrate and the light receiving portion, and a gate formed between the interlayer insulating film and the substrate. An electrode, and a metal light-shielding film formed on the interlayer insulating film and having at least one opening on the light-receiving portion,
A solid-state imaging device comprising a protective film formed on the metal light-shielding film, wherein an antireflection film is present at an interface between the silicon substrate of the light receiving section and an interlayer insulating film.
光膜の開口部の下に存在する請求項１に記載の固体撮像
素子。2. The solid-state imaging device according to claim 1, wherein the antireflection film is present above the light receiving portion and below the opening of the metal light shielding film.
膜の下に存在する請求項１に記載の固体撮像素子。3. The solid-state imaging device according to claim 1, wherein the antireflection film is present on the substrate and under the metal light-shielding film.
パラジウムからなる請求項１〜３のいずれか１項に記載
の固体撮像素子。4. The solid-state image pickup device according to claim 1, wherein the antireflection film is made of cerium oxide or palladium fluoride.
有する請求項１〜３のいずれか１項に記載の固体撮像素
子。5. The solid-state imaging device according to claim 1, wherein the antireflection film has a thickness of 50 to 200 nm.
有する請求項１〜３のいずれか１項に記載の固体撮像素
子。6. The solid-state imaging device according to claim 1, wherein the antireflection film has a refractive index of 1.95 to 2.2.
た受光部と、前記基板及び受光部の上に形成された層間
絶縁膜と、前記層間絶縁膜と基板との間に形成されたゲ
ート電極と、前記層間絶縁膜の上に形成され前記受光部
の上に少なくとも１つの開口部を有する金属遮光膜と、
前記金属遮光膜の上に形成された保護膜を備えた固体撮
像素子を製造する方法において、前記金属遮光膜のパタ
ーン形成を行った後、前記受光部の上の層間絶縁膜をエ
ッチングによって除去し、除去した部分に化学的気相蒸
着法またはイオンビームスパッタ法により反射防止膜を
形成した後に保護膜を形成することを特徴とする固体撮
像素子の製造方法。7. A silicon substrate, a light receiving portion provided in the substrate, an interlayer insulating film formed on the substrate and the light receiving portion, and a gate formed between the interlayer insulating film and the substrate. An electrode, and a metal light-shielding film formed on the interlayer insulating film and having at least one opening on the light-receiving portion,
In the method of manufacturing a solid-state imaging device having a protective film formed on the metal light-shielding film, after patterning the metal light-shielding film, the interlayer insulating film on the light receiving portion is removed by etching. A method for manufacturing a solid-state imaging device, comprising forming an antireflection film on the removed portion by a chemical vapor deposition method or an ion beam sputtering method, and then forming a protective film.
た受光部と、前記基板の上に形成された層間絶縁膜と、
前記層間絶縁膜の上に形成されたゲート電極と、前記層
間絶縁膜の上に形成され前記受光部の上に少なくとも１
つの開口部を有する金属遮光膜と、前記金属遮光膜の上
に形成された保護膜を備えた固体撮像素子を製造する方
法において、前記受光部の上の層間絶縁膜をエッチング
によって除去し、前記ゲート電極及び受光部の上に化学
的気相蒸着法またはイオンビームスパッタ法により反射
防止膜を形成し、前記反射防止膜の上に金属遮光膜を形
成しパターン形成を行った後、前記金属遮光膜及び反射
防止膜の上に保護膜を形成することを特徴とする固体撮
像素子の製造方法。8. A silicon substrate, a light-receiving portion provided in the substrate, an interlayer insulating film formed on the substrate,
At least one gate electrode formed on the interlayer insulating film and at least one on the light receiving portion formed on the interlayer insulating film.
In a method of manufacturing a solid-state imaging device comprising a metal light-shielding film having one opening and a protective film formed on the metal light-shielding film, the interlayer insulating film on the light-receiving portion is removed by etching, An antireflection film is formed on the gate electrode and the light receiving portion by a chemical vapor deposition method or an ion beam sputtering method, a metal light shielding film is formed on the antireflection film, and a pattern is formed. A method for manufacturing a solid-state imaging device, comprising forming a protective film on the film and the antireflection film.
請求項７または８に記載の固体撮像素子の製造方法。9. The method for manufacturing a solid-state image sensor according to claim 7, wherein the etching is wet etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7254979A JPH0997890A (en) | 1995-10-02 | 1995-10-02 | Solid-state image pickup device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7254979A JPH0997890A (en) | 1995-10-02 | 1995-10-02 | Solid-state image pickup device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0997890A true JPH0997890A (en) | 1997-04-08 |
Family
ID=17272535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7254979A Pending JPH0997890A (en) | 1995-10-02 | 1995-10-02 | Solid-state image pickup device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0997890A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7049671B2 (en) | 2003-05-01 | 2006-05-23 | Renesas Technology Corp. | Solid-state imaging device with antireflection film |
-
1995
- 1995-10-02 JP JP7254979A patent/JPH0997890A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7049671B2 (en) | 2003-05-01 | 2006-05-23 | Renesas Technology Corp. | Solid-state imaging device with antireflection film |
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