JPH0992744A - Circuit device and manufacture thereof - Google Patents
Circuit device and manufacture thereofInfo
- Publication number
- JPH0992744A JPH0992744A JP7244026A JP24402695A JPH0992744A JP H0992744 A JPH0992744 A JP H0992744A JP 7244026 A JP7244026 A JP 7244026A JP 24402695 A JP24402695 A JP 24402695A JP H0992744 A JPH0992744 A JP H0992744A
- Authority
- JP
- Japan
- Prior art keywords
- circuit device
- case
- dividing
- substrate
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 69
- 238000003825 pressing Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 abstract description 53
- 238000000034 method Methods 0.000 abstract description 4
- 238000005452 bending Methods 0.000 description 15
- 239000011888 foil Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 9
- 238000005520 cutting process Methods 0.000 description 8
- 238000009413 insulation Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000000428 dust Substances 0.000 description 3
- 238000012805 post-processing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000010397 one-hybrid screening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0097—Processing two or more printed circuits simultaneously, e.g. made from a common substrate, or temporarily stacked circuit boards
Landscapes
- Structure Of Printed Boards (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】この発明は、ケースを有する
混成集積回路装置等の回路装置およびその製造方法に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a circuit device such as a hybrid integrated circuit device having a case and a manufacturing method thereof.
【0002】[0002]
【従来の技術】近年、混成集積回路装置は金属基板に半
導体等の電気部品を実装し、その上部をケースでカバー
し、ケースを接着剤で金属基板に固定している。以下図
面を参照しながら、上述した従来の混成集積回路装置の
一例について説明する。図9(A)は従来の混成集積回
路装置の斜視図を示し、(B)は混成集積回路装置のケ
ースを除去した斜視図を示すものである。図9におい
て、1は金属基板、2はパワートランジスタ、3はI
C、4は外部回路との接続用リード端子、5はパワート
ランジスタ2およびIC3の半導体素子と金属基板1の
導電箔を接続するワイヤ、6はケース、7は従来の混成
集積回路装置、8は混成集積回路装置7のケース6に設
けられて放熱器等に取付けられるための取り付けビス用
の穴を示す。2. Description of the Related Art Recently, in a hybrid integrated circuit device, an electric component such as a semiconductor is mounted on a metal substrate, an upper portion of the hybrid integrated circuit device is covered with a case, and the case is fixed to the metal substrate with an adhesive. An example of the above-described conventional hybrid integrated circuit device will be described below with reference to the drawings. FIG. 9A is a perspective view of a conventional hybrid integrated circuit device, and FIG. 9B is a perspective view of the hybrid integrated circuit device without a case. In FIG. 9, 1 is a metal substrate, 2 is a power transistor, and 3 is I.
C, 4 are lead terminals for connection with an external circuit, 5 is a wire for connecting the semiconductor elements of the power transistor 2 and IC 3 and the conductive foil of the metal substrate 1, 6 is a case, 7 is a conventional hybrid integrated circuit device, and 8 is A hole for a mounting screw that is provided in the case 6 of the hybrid integrated circuit device 7 and is mounted on a radiator or the like is shown.
【0003】この混成集積回路装置7の製造方法は、金
属基板1上にパワートランジスタ2およびIC3等の電
気部品を実装し、ワイヤ5で金属基板1の導電箔と電気
的に接続し、接続用リード端子4を半田付けして組み立
て完了後、ケース6を接着剤により金属基板1に接着
し、混成集積回路装置7を組み立て完成する。In this method for manufacturing the hybrid integrated circuit device 7, electrical components such as the power transistor 2 and the IC 3 are mounted on the metal substrate 1, and the wires 5 are electrically connected to the conductive foil of the metal substrate 1 for connection. After the lead terminals 4 are soldered and the assembly is completed, the case 6 is adhered to the metal substrate 1 with an adhesive to complete the assembly of the hybrid integrated circuit device 7.
【0004】[0004]
【発明が解決しようとする課題】しかしながら、上記の
ような従来の混成集積回路装置は、単品生産のため、生
産性が悪いという問題点を有していた。また多チャンネ
ル対応が難しいという問題点を有していた。したがっ
て、この発明の目的は、生産性が良く、多チャンネル対
応が容易な回路装置およびその製造方法を提供すること
である。However, the conventional hybrid integrated circuit device as described above has a problem of poor productivity because it is manufactured as a single product. Also, it has a problem that it is difficult to support multiple channels. SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a circuit device which has good productivity and is easily compatible with multiple channels, and a manufacturing method thereof.
【0005】[0005]
【課題を解決するための手段】請求項1の回路装置は、
第1の分割用接続部を有する基板に部品を実装した回路
装置本体と、第2の分割用接続部を有して基板に取付け
られたケースとを備えたものである。請求項1の回路装
置によれば、複数の回路装置本体およびケースを組み立
て完成まで共取りで生産できるため、多チャンネル対応
の回路装置が容易に構成できる。また基板にケースが取
付けられた状態で第1の分割用接続部および第2の分割
用接続部により個片に分割するため、生産性を倍増する
ことができる。A circuit device according to claim 1 is
It is provided with a circuit device body in which components are mounted on a substrate having a first dividing connection portion, and a case having a second dividing connection portion and attached to the substrate. According to the circuit device of the first aspect, since the plurality of circuit device bodies and the case can be produced together by assembling, the multi-channel circuit device can be easily configured. Further, since the first dividing connecting portion and the second dividing connecting portion divide into individual pieces with the case attached to the substrate, the productivity can be doubled.
【0006】請求項2の回路装置は、請求項1におい
て、ケースの第2の分割用接続部にビスの頭部を押し付
けるためのビス穴を前記ケースに設けたものである。請
求項2の回路装置によれば、請求項1の効果のほか、多
チャンネル対応の回路装置を構成する場合に、回路装置
の取り付けを簡素化でき、生産性の良い回路装置を得る
ことができる。A circuit device according to a second aspect of the present invention is the circuit device according to the first aspect, wherein the case is provided with a screw hole for pressing the head of the screw against the second dividing connection portion. According to the circuit device of the second aspect, in addition to the effect of the first aspect, the mounting of the circuit device can be simplified and a circuit device with high productivity can be obtained when configuring the circuit device for multi-channels. .
【0007】請求項3の回路装置は、請求項1におい
て、ケースの第2の分割用接続部を、ケースの取付面よ
り離れて形成したものである。請求項3の回路装置によ
れば、請求項1の効果のほか、ばり取り等のための後加
工が不要な回路装置を提供することができる。請求項4
の回路装置は、請求項1において、基板の第1の分割用
接続部が基板の上下面に形成したV溝により構成し、か
つ上側のV溝の深さと下側のV溝の深さを異ならせたも
のである。A third aspect of the present invention is the circuit device according to the first aspect, wherein the second dividing connecting portion of the case is formed apart from the mounting surface of the case. According to the circuit device of the third aspect, in addition to the effect of the first aspect, it is possible to provide a circuit device that does not require post-processing such as deburring. Claim 4
The circuit device according to claim 1, wherein the first dividing connection portion of the substrate is constituted by a V groove formed on the upper and lower surfaces of the substrate, and the depth of the upper V groove and the depth of the lower V groove are defined. It is different.
【0008】請求項4の回路装置によれば、請求項1の
効果のほか、基板のベース材を金属製にした場合におけ
るベース材と導電箔との絶縁距離を大きくし絶縁耐圧を
大きくすることが可能となるとともに、折曲げ切断時の
力を小さく、折曲げ回数を少なくすることができる。請
求項5の回路装置は、請求項1において、基板の第1の
分割用接続部が基板の上下面に形成したV溝により構成
し、かつ上側のV溝と下側のV溝の開き角度を異ならせ
たものである。According to the circuit device of claim 4, in addition to the effect of claim 1, when the base material of the substrate is made of metal, the insulation distance between the base material and the conductive foil is increased to increase the withstand voltage. In addition to the above, the force at the time of bending and cutting can be reduced, and the number of times of bending can be reduced. A circuit device according to a fifth aspect is the circuit device according to the first aspect, wherein the first dividing connection portion of the substrate is formed by a V groove formed on the upper and lower surfaces of the substrate, and an opening angle between the upper V groove and the lower V groove. Is different.
【0009】請求項5の回路装置は、請求項1の効果の
ほか、基板のベース材を金属製にした場合におけるベー
ス材と導電箔との絶縁距離を大きくし絶縁耐圧を大きく
することが可能となるとともに、基板の第1の分割用接
続部を折り曲げて分割する際の折曲げ角度を大きくする
ことができ、分割のための折曲げ回数を少なくすること
ができる。According to the circuit device of claim 5, in addition to the effect of claim 1, it is possible to increase the insulation distance between the base material and the conductive foil and increase the withstand voltage when the base material of the substrate is made of metal. In addition, it is possible to increase the bending angle when the first dividing connecting portion of the substrate is bent and divide, and it is possible to reduce the number of times of bending for dividing.
【0010】請求項6の回路装置の製造方法は、第1の
分割用接続部を介して連続した複数の基板にそれぞれ部
品を実装し、第2の分割用接続部で接続されたケースを
基板の各々に取付け、その後第1の分割接続部および第
2の分割用接続部を分割することを特徴とするものであ
る。請求項6の回路装置の製造方法によれば、部品を実
装した基板にケースを取付けた回路装置を共取りで製造
し、最終工程で分割するため、搬送系のロスがなくな
り、生産性を倍増することができる。またケースを取付
けた後の分割のため、分割時の基板の金属等の切断ごみ
が回路装置の中に入ることもなく、品質の高い回路装置
を提供できる。According to a sixth aspect of the present invention, there is provided a method of manufacturing a circuit device, wherein components are mounted on a plurality of boards that are continuous through a first dividing connecting portion, and a case connected by the second dividing connecting portion is used as a substrate. And then the first split connecting portion and the second split connecting portion are split. According to the method of manufacturing a circuit device of claim 6, since the circuit device in which the case is attached to the board on which the component is mounted is manufactured together and divided in the final step, the loss of the transport system is eliminated and the productivity is doubled. can do. Further, since the division is performed after the case is attached, the cutting dust such as the metal of the substrate at the time of division does not enter the circuit device, and the circuit device of high quality can be provided.
【0011】[0011]
【発明の実施の形態】以下、この発明の第1の実施の形
態の混成集積回路装置について、図1ないし図6を参照
しながら詳細に説明する。図1(A)は第1の実施の形
態における混成集積回路装置のケースの斜視図、同図
(B)は混成集積回路装置の中身すなわち回路装置本体
の斜視図、図2(A)はケースの上面図、同図(B)は
ケースの側面図、図3は組み立て完了した回路装置本体
の側面図、図4(A)は回路装置本体の組み立て完了後
にケースを接着した側面図、同図(B)はその上面図を
示すものである。BEST MODE FOR CARRYING OUT THE INVENTION A hybrid integrated circuit device according to a first embodiment of the present invention will be described in detail below with reference to FIGS. FIG. 1A is a perspective view of a case of the hybrid integrated circuit device according to the first embodiment, FIG. 1B is a perspective view of the contents of the hybrid integrated circuit device, that is, a circuit device body, and FIG. 2A is a case. FIG. 4B is a side view of the case, FIG. 3 is a side view of the circuit device body that has been assembled, and FIG. 4A is a side view where the case is bonded after the circuit device body has been assembled. (B) shows the top view.
【0012】図1ないし図4において、9は片方の混成
集積回路装置、10はもう片方の混成集積回路装置、1
1は共取りした金属基板、12は金属基板11に設けら
れたV溝により形成した第1の分割用接続部、2は金属
基板11上に実装されたパワートランジスタ、3は金属
基板11上に実装されたIC、4は外部回路との接続用
リード端子、5はパワートランジスタ2およびIC3の
半導体素子と金属基板11の導電箔を接続するワイヤ、
13は共取りしたケース、14は混成集積回路装置9,
10の共取りしたケース13に各々設けられた取り付け
ビス用の穴、15は共取りしたケース13の個片を接続
する第2の分割用接続部、23は回路装置本体を示す。In FIGS. 1 to 4, 9 is one hybrid integrated circuit device, 10 is the other hybrid integrated circuit device, 1
Reference numeral 1 is a metal substrate co-fabricated, 12 is a first dividing connecting portion formed by a V groove provided in the metal substrate 11, 2 is a power transistor mounted on the metal substrate 11, and 3 is on the metal substrate 11. The mounted IC, 4 is a lead terminal for connecting to an external circuit, 5 is a wire connecting the semiconductor element of the power transistor 2 and the IC 3 and the conductive foil of the metal substrate 11,
13 is a co-acquired case, 14 is a hybrid integrated circuit device 9,
Reference numeral 10 denotes a mounting screw hole provided in each of the co-acquired cases 13, 15 denotes a second dividing connecting portion for connecting the individual pieces of the co-acquired cases 13, and 23 denotes a circuit device body.
【0013】すなわち、この混成集積回路装置は、第1
の分割用接続部12を有する金属基板11にパワートラ
ンジスタ2等の部品を実装した回路装置本体23と、第
2の分割用接続部15を有して金属基板11に取付けら
れたケース13とを備えている。ケース13は接着剤に
より金属基板11に取付けられる。穴14にはビスが挿
入されて混成集積回路装置が放熱器等に取付けられる。
また、金属基板11にケース13が取付けられた状態
で、図4に示すように第1の分割用接続部12と第2の
分割用接続部15とは折曲げにより分割できるように一
直線上に並び、第1の分割用接続部12の両側に第2の
分割用接続部15が位置している。That is, this hybrid integrated circuit device has a first
The circuit device main body 23 in which components such as the power transistor 2 are mounted on the metal substrate 11 having the dividing connection portion 12 and the case 13 having the second dividing connection portion 15 and attached to the metal substrate 11. I have it. The case 13 is attached to the metal substrate 11 with an adhesive. A screw is inserted into the hole 14 to attach the hybrid integrated circuit device to a radiator or the like.
Also, with the case 13 attached to the metal substrate 11, as shown in FIG. 4, the first dividing connecting portion 12 and the second dividing connecting portion 15 are aligned in a straight line so that they can be divided by bending. Side by side, the second dividing connection portions 15 are located on both sides of the first dividing connection portion 12.
【0014】つぎに、この混成集積回路装置の製造方法
について説明する。すなわち、まず図3に示すように第
1の分割用接続部12を介して共取りした金属基板11
上にパワートランジスタ2およびIC3等の電気部品を
実装し組み立てを完了する。図2に示す第2の分割用接
続部15を介して共取りしたケース13を接着剤により
金属基板11に接着して取付け、図4に示すように分割
可能な混成集積回路装置9,10を共取り状態で組み立
て完了する。そして、組み立て完成後に図5に示すよう
に金属基板11のV溝の第1の分割用接続部12とケー
ス13の第2の分割用接続部15を支点にして矢印のよ
うに折曲げるようにして力fを加え、折曲げ運動を繰り
返して図6に示すように同時に金属基板11とケース1
3を分割する。Next, a method of manufacturing this hybrid integrated circuit device will be described. That is, first, as shown in FIG. 3, the metal substrate 11 co-acquired through the first connecting portion 12 for division.
The electric components such as the power transistor 2 and the IC 3 are mounted on the upper part, and the assembly is completed. The case 13 co-acquired through the second dividing connection portion 15 shown in FIG. 2 is attached to the metal substrate 11 by an adhesive so that the divisible hybrid integrated circuit device 9 or 10 can be obtained as shown in FIG. Assembly is completed in the co-picking state. After the assembly is completed, as shown in FIG. 5, the first dividing connecting portion 12 of the V groove of the metal substrate 11 and the second dividing connecting portion 15 of the case 13 are used as fulcrums and bent as shown by an arrow. Force f is applied to repeat the bending motion, and the metal substrate 11 and the case 1 are simultaneously moved as shown in FIG.
Divide 3.
【0015】また図2(B)に示すように、ケース13
の第2の分割用接続部15を、ケース13の金属基板1
1に対する取付面より寸法aだけ離れて形成すると、寸
法aをばりの高さ以上確保することにより、分割後のケ
ース13の第2の分割用接続部15のばり取り等の後加
工が必要でなく、生産性の優れた混成集積回路装置を提
供できる。Further, as shown in FIG. 2B, the case 13
The second dividing connecting portion 15 of the metal substrate 1 of the case 13
If it is formed away from the mounting surface for No. 1 by the dimension a, the dimension a is secured to be equal to or higher than the height of the flash, so that post-processing such as deburring of the second split connection portion 15 of the case 13 after splitting is required. It is possible to provide a hybrid integrated circuit device having excellent productivity.
【0016】この実施の形態によれば、複数の回路装置
本体23およびケース13を組み立て完成まで共取りで
生産できるため、多チャンネル対応の回路装置が容易に
構成できる。また金属基板11にケース13が取付けら
れた状態で第1の分割用接続部12および第2の分割用
接続部15により個片に分割するため、生産性を倍増す
ることができる。According to this embodiment, since a plurality of circuit device bodies 23 and the case 13 can be produced together by assembling until completed, a multi-channel compatible circuit device can be easily constructed. Further, since the first dividing connecting portion 12 and the second dividing connecting portion 15 are used to divide the metal substrate 11 into the individual pieces with the case 13 attached, productivity can be doubled.
【0017】また混成集積回路装置の製造方法によれ
ば、部品を実装した金属基板11にケース13を取付け
た混成集積回路装置を共取りで製造し、最終工程で分割
するため、搬送系のロスがなくなり、生産性を倍増する
ことができる。またケース13を取付けた後の分割のた
め、分割時の金属基板11の金属等の切断ごみが混成集
積回路装置の中に入ることもなく、品質の高い混成集積
回路装置を提供できる。Further, according to the method of manufacturing the hybrid integrated circuit device, since the hybrid integrated circuit device in which the case 13 is attached to the metal substrate 11 on which the components are mounted is manufactured in the same process and divided in the final step, the transport system loss is caused. Can be doubled and productivity can be doubled. Further, since the division is performed after the case 13 is attached, the cutting dust of the metal or the like of the metal substrate 11 at the time of division does not enter the hybrid integrated circuit device, and a high quality hybrid integrated circuit device can be provided.
【0018】なお、第1の分割用接続部12および第2
の分割用接続部15の切断方法を炭酸ガスレーザ、切削
加工、金型等に変えることにより金属基板11の第1の
分割用接続部12がV溝等に加工されなくても分割可能
である。この発明の第2の実施の形態を図7に示す。す
なわち、この混成集積回路装置は、ケース13の第2の
分割用接続部15にビス(図示せず)の頭部を押し付け
るためのビス穴21をケース13に設けたものである。
第2の分割用接続部15は各ビス穴21に対応して2本
ずつ形成している。The first dividing connection portion 12 and the second dividing connection portion 12
By changing the cutting method of the dividing connection portion 15 to a carbon dioxide gas laser, a cutting process, a die, or the like, it is possible to divide the first dividing connection portion 12 of the metal substrate 11 without being processed into a V groove or the like. FIG. 7 shows a second embodiment of the present invention. That is, in this hybrid integrated circuit device, the case 13 is provided with a screw hole 21 for pressing the head of a screw (not shown) against the second dividing connection portion 15 of the case 13.
Two second connecting portions 15 for division are formed corresponding to each screw hole 21.
【0019】この実施の形態によれば、共取り状態の混
成集積回路装置を放熱器等に取り付ける場合、混成集積
回路装置を取り付けるビス(図示せず)をビス穴21で
共用させて、ビスを穴14に挿入して取付ける際に必要
な4本から、2本に減らすことが可能となり、取り付け
が簡素化でき、生産性の良い混成集積回路装置が構成で
きる。According to this embodiment, when the hybrid integrated circuit device in the co-pickup state is mounted on a radiator or the like, the screw (not shown) for mounting the hybrid integrated circuit device is shared by the screw holes 21, and the screw is It is possible to reduce the number from four required when inserting into the hole 14 and attaching to two, simplifying the attaching, and constructing a hybrid integrated circuit device with good productivity.
【0020】この発明の第3の実施の形態を図8に示
す。すなわち、図8において16は金属基板11の導電
箔、17は金属基板11の絶縁層、18は金属基板11
のベース材、19は金属基板11の第1の分割用接続部
12のうちベース材14側のV溝、20は金属基板11
の第1の分割用接続部12のうち導電箔12側のV溝で
ある。A third embodiment of the present invention is shown in FIG. That is, in FIG. 8, 16 is a conductive foil of the metal substrate 11, 17 is an insulating layer of the metal substrate 11, and 18 is the metal substrate 11.
Base material, 19 is a V groove on the side of the base material 14 of the first dividing connection portion 12 of the metal substrate 11, and 20 is the metal substrate 11.
Is a V-shaped groove on the side of the conductive foil 12 of the first dividing connection portion 12.
【0021】V溝20の溝の深さ寸法bを絶縁層17の
厚み以上を確保した上で、小さくすることにより、金属
基板11の端面から導電箔16までの寸法距離dを大き
くすることができる。すなわち導電箔16と金属基板1
1のベース材18との絶縁耐圧を大きくすることが可能
となる。また、V溝19のV溝深さ寸法cを大きくする
ことにより、折曲げ切断時の力を小さく、折曲げ回数を
少なくすることができる。It is possible to increase the dimensional distance d from the end face of the metal substrate 11 to the conductive foil 16 by making the groove depth dimension b of the V-groove 20 smaller than the thickness of the insulating layer 17 after securing it. it can. That is, the conductive foil 16 and the metal substrate 1
It is possible to increase the withstand voltage of the first base material 18. Further, by increasing the V groove depth dimension c of the V groove 19, the force at the time of bending and cutting can be reduced, and the number of times of bending can be reduced.
【0022】つぎに、V溝20の溝の角度fを小さくす
ることによっても金属基板11の端面から導電箔16ま
での寸法距離dを大きくすることができ、導電箔16と
金属基板のベース材18との絶縁耐圧を大きくすること
が可能となる。また、V溝19のV溝角度eを大きくす
ることにより、折曲げ角度を大きく取ることができ、折
曲げ回数を少なくすることができる。Next, the dimension distance d from the end face of the metal substrate 11 to the conductive foil 16 can be increased by reducing the groove angle f of the V groove 20, and the base material of the conductive foil 16 and the metal substrate can be increased. It is possible to increase the withstand voltage with respect to 18. In addition, by increasing the V groove angle e of the V groove 19, the bending angle can be increased and the number of times of bending can be reduced.
【0023】この実施の形態によれば、信頼性が高く、
生産性の良い混成集積回路装置が構成できることとな
る。なお、この発明において、回路装置は混成集積回路
であったが、その他の回路装置でもよく、また基板も前
記した実施の形態の金属基板に限らない。According to this embodiment, the reliability is high,
A hybrid integrated circuit device with good productivity can be constructed. In the present invention, the circuit device is a hybrid integrated circuit, but other circuit devices may be used, and the substrate is not limited to the metal substrate of the above-described embodiment.
【0024】[0024]
【発明の効果】請求項1の回路装置によれば、複数の回
路装置本体およびケースを組み立て完成まで共取りで生
産できるため、多チャンネル対応の回路装置が容易に構
成できる。また基板にケースが取付けられた状態で第1
の分割用接続部および第2の分割用接続部により個片に
分割するため、生産性を倍増することができるという効
果がある。According to the circuit device of the first aspect, since a plurality of circuit device bodies and cases can be produced together by assembly until completed, a circuit device corresponding to multiple channels can be easily constructed. Also, with the case attached to the board, the first
Since the dividing connection portion and the second dividing connection portion divide into individual pieces, there is an effect that the productivity can be doubled.
【0025】請求項2の回路装置によれば、請求項1に
おいて、ケースの第2の分割用接続部にビスの頭部を押
し付けるためのビス穴をケースに設けたたため、請求項
1の効果のほか、多チャンネル対応の回路装置を構成す
る場合に、回路装置の取り付けを簡素化でき、生産性の
良い回路装置を得ることができる。請求項3の回路装置
によれば、請求項1において、ケースの第2の分割用接
続部を、ケースの取付面より離れて形成したため、請求
項1の効果のほか、ばり取り等のための後加工が不要な
回路装置を提供することができる。According to the second aspect of the circuit device, in the first aspect, the case is provided with the screw hole for pressing the head of the screw against the second dividing connecting portion of the case. Therefore, the effect of the first aspect is provided. Besides, in the case of configuring a circuit device compatible with multiple channels, the mounting of the circuit device can be simplified, and a circuit device with good productivity can be obtained. According to the circuit device of the third aspect, in the first aspect, the second connecting portion for division of the case is formed apart from the mounting surface of the case. Therefore, in addition to the effect of the first aspect, deburring and the like are achieved. A circuit device that does not require post-processing can be provided.
【0026】請求項4の回路装置によれば、請求項1に
おいて、基板の第1の分割用接続部が基板の上下面に形
成したV溝により構成し、かつ上側のV溝の深さと下側
のV溝の深さを異ならせたため、請求項1の効果のほ
か、基板のベース材を金属製にした場合におけるベース
材と導電箔との絶縁距離を大きくし絶縁耐圧を大きくす
ることが可能となるとともに、折曲げ切断時の力を小さ
く、折曲げ回数を少なくすることができる。According to a fourth aspect of the present invention, there is provided the circuit device according to the first aspect, wherein the first dividing connection portion of the substrate is formed by the V groove formed on the upper and lower surfaces of the substrate, and the depth and the depth of the upper V groove are lower. Since the depth of the V-shaped groove on the side is made different, in addition to the effect of claim 1, when the base material of the substrate is made of metal, it is possible to increase the insulation distance between the base material and the conductive foil and increase the withstand voltage. In addition to being possible, the force at the time of bending and cutting can be reduced, and the number of times of bending can be reduced.
【0027】請求項5の回路装置によれば、請求項1に
おいて、基板の第1の分割用接続部が基板の上下面に形
成したV溝により構成し、かつ上側のV溝と下側のV溝
の開き角度を異ならせたため、請求項1の効果のほか、
基板のベース材を金属製にした場合におけるベース材と
導電箔との絶縁距離を大きくし絶縁耐圧を大きくするこ
とが可能となるとともに、基板の第1の分割用接続部を
折り曲げて分割する際の折曲げ角度を大きくすることが
でき、分割のための折曲げ回数を少なくすることができ
る。According to a fifth aspect of the circuit device of the present invention, in the first aspect, the first dividing connecting portion of the substrate is constituted by the V groove formed on the upper and lower surfaces of the substrate, and the upper V groove and the lower V groove are formed. Since the opening angle of the V groove is different, in addition to the effect of claim 1,
When the base material of the substrate is made of metal, it becomes possible to increase the insulation distance between the base material and the conductive foil to increase the withstand voltage, and at the time of bending and dividing the first dividing connection portion of the substrate. The bending angle can be increased, and the number of times of bending for division can be reduced.
【0028】請求項6の回路装置の製造方法によれば、
第1の分割用接続部を介して連続した複数の基板にそれ
ぞれ部品を実装し、第2の分割用接続部で接続されたケ
ースを基板の各々に取付け、その後第1の分割接続部お
よび第2の分割用接続部を分割することを特徴とするた
め、部品を実装した基板にケースを取付けた回路装置を
共取りで製造し、最終工程で分割するため、搬送系のロ
スがなくなり、生産性を倍増することができる。またケ
ースを取付けた後の分割のため、分割時の基板の金属等
の切断ごみが回路装置の中に入ることもなく、品質の高
い回路装置を提供できる。According to the method of manufacturing a circuit device of claim 6,
The components are mounted on a plurality of boards that are continuous through the first connecting portion for division, the cases connected by the second connecting portion for attachment are attached to each of the boards, and then the first connecting portion and the first connecting portion Since it is characterized by dividing the connecting portion for division of 2, the circuit device in which the case is attached to the board on which the components are mounted is manufactured together, and is divided in the final step, so that there is no loss in the transfer system and production You can double your sex. Further, since the division is performed after the case is attached, the cutting dust such as the metal of the substrate at the time of division does not enter the circuit device, and the circuit device of high quality can be provided.
【図1】この発明の第1の実施の形態の混成集積回路装
置を示し、(A)はそのケースの斜視図、(B)は混成
集積回路装置本体の斜視図である。FIG. 1 shows a hybrid integrated circuit device according to a first embodiment of the present invention, (A) is a perspective view of a case thereof, and (B) is a perspective view of a hybrid integrated circuit device main body.
【図2】共取りしたケースを示し、(A)はその上面
図、(B)は側面図である。2A and 2B show a case taken together, FIG. 2A is a top view thereof, and FIG. 2B is a side view thereof.
【図3】実装済み基板の側面図である。FIG. 3 is a side view of a mounted board.
【図4】混成集積回路装置を示し、(A)は共取り状態
での混成集積回路装置の側面図、(B)はその上面図で
ある。FIG. 4 shows a hybrid integrated circuit device, FIG. 4A is a side view of the hybrid integrated circuit device in a co-pickup state, and FIG.
【図5】共取りした混成集積回路装置の分割を説明する
側面図である。FIG. 5 is a side view for explaining division of a hybrid integrated circuit device taken together.
【図6】分割された後の個片になった混成集積回路装置
を示す側面図である。FIG. 6 is a side view showing the individual hybrid integrated circuit device after being divided.
【図7】第2の実施の形態の共用ビス穴を設けたケース
の上面図である。FIG. 7 is a top view of a case having a common screw hole according to the second embodiment.
【図8】第3の実施の形態の金属基板を示し、(A)は
金属基板のV溝部分の上面図、(B)は金属基板のV溝
部分の側面図である。FIG. 8 shows a metal substrate of a third embodiment, (A) is a top view of a V groove portion of the metal substrate, and (B) is a side view of the V groove portion of the metal substrate.
【図9】従来の混成集積回路装置を示し、(A)はその
斜視図、(B)はケースを除去した斜視図である。9A and 9B show a conventional hybrid integrated circuit device, FIG. 9A is a perspective view thereof, and FIG. 9B is a perspective view with a case removed.
2 部品であるパワートランジスタ 3 部品IC 9 混成集積回路装置 10 混成集積回路装置 11 金属基板 12 第1の分割用接続部 13 ケース 15 第2の分割用接続部 16 金属基板の導電箔 17 金属基板の絶縁層 18 金属基板のベース材 19 V溝 20 V溝 21 ビス穴 23 回路装置本体 2 parts power transistor 3 parts IC 9 hybrid integrated circuit device 10 hybrid integrated circuit device 11 metal substrate 12 first dividing connection portion 13 case 15 second dividing connection portion 16 conductive foil of metal substrate 17 of metal substrate Insulation layer 18 Base material of metal substrate 19 V groove 20 V groove 21 Screw hole 23 Circuit device body
Claims (6)
を実装した回路装置本体と、第2の分割用接続部を有し
て前記基板に取付けられたケースとを備えた回路装置。1. A circuit device comprising: a circuit device body in which components are mounted on a substrate having a first dividing connection portion; and a case having a second dividing connection portion and attached to the substrate.
部を押し付けるためのビス穴を前記ケースに設けた請求
項1記載の回路装置。2. The circuit device according to claim 1, wherein a screw hole for pressing the head portion of the screw is provided on the second dividing connection portion of the case in the case.
ースの取付面より離れて形成した請求項1回路装置。3. The circuit device according to claim 1, wherein the second dividing connection portion of the case is formed apart from a mounting surface of the case.
の上下面に形成したV溝により構成し、かつ上側のV溝
の深さと下側のV溝の深さを異ならせた請求項1記載の
回路装置。4. The first dividing connection portion of the substrate is constituted by V grooves formed on the upper and lower surfaces of the substrate, and the depth of the upper V groove and the depth of the lower V groove are made different. The circuit device according to claim 1.
の上下面に形成したV溝により構成し、かつ上側のV溝
と下側のV溝の開き角度を異ならせた請求項1記載の回
路装置。5. The first dividing connecting portion of the substrate is constituted by a V groove formed on the upper and lower surfaces of the substrate, and an opening angle between the upper V groove and the lower V groove is different. 1. The circuit device according to 1.
数の基板にそれぞれ部品を実装し、第2の分割用接続部
で接続されたケースを前記基板の各々に取付け、その後
前記第1の分割用接続部および前記第2の分割用接続部
を分割することを特徴とする回路装置の製造方法。6. A component is mounted on each of a plurality of boards that are continuous through a first dividing connecting portion, a case connected by a second dividing connecting portion is attached to each of the boards, and then the first connecting portion is mounted. A method of manufacturing a circuit device, characterized in that one division connecting portion and the second division connecting portion are divided.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24402695A JP3260601B2 (en) | 1995-09-22 | 1995-09-22 | Circuit device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24402695A JP3260601B2 (en) | 1995-09-22 | 1995-09-22 | Circuit device and method of manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0992744A true JPH0992744A (en) | 1997-04-04 |
JP3260601B2 JP3260601B2 (en) | 2002-02-25 |
Family
ID=17112613
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24402695A Expired - Fee Related JP3260601B2 (en) | 1995-09-22 | 1995-09-22 | Circuit device and method of manufacturing the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3260601B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005123606A (en) * | 2003-09-25 | 2005-05-12 | Sanyo Electric Co Ltd | Hybrid integrated circuit device and manufacturing method therefor |
CN100438719C (en) * | 2003-09-25 | 2008-11-26 | 三洋电机株式会社 | Hybrid integrated circuit device and method of manufacturing the same |
-
1995
- 1995-09-22 JP JP24402695A patent/JP3260601B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005123606A (en) * | 2003-09-25 | 2005-05-12 | Sanyo Electric Co Ltd | Hybrid integrated circuit device and manufacturing method therefor |
CN100438719C (en) * | 2003-09-25 | 2008-11-26 | 三洋电机株式会社 | Hybrid integrated circuit device and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
JP3260601B2 (en) | 2002-02-25 |
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