JPH0982994A - Photovoltaic device and manufacture thereof - Google Patents
Photovoltaic device and manufacture thereofInfo
- Publication number
- JPH0982994A JPH0982994A JP7258144A JP25814495A JPH0982994A JP H0982994 A JPH0982994 A JP H0982994A JP 7258144 A JP7258144 A JP 7258144A JP 25814495 A JP25814495 A JP 25814495A JP H0982994 A JPH0982994 A JP H0982994A
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- layer
- transparent conductive
- opaque
- photovoltaic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 53
- 239000004065 semiconductor Substances 0.000 claims abstract description 66
- 230000007547 defect Effects 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 239000012212 insulator Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 130
- 229910045601 alloy Inorganic materials 0.000 claims description 25
- 239000000956 alloy Substances 0.000 claims description 25
- 230000002950 deficient Effects 0.000 claims description 19
- 239000011347 resin Substances 0.000 claims description 19
- 229920005989 resin Polymers 0.000 claims description 19
- 238000003466 welding Methods 0.000 claims description 13
- 238000002844 melting Methods 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 7
- 229910000679 solder Inorganic materials 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 5
- 238000003825 pressing Methods 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 40
- 239000007789 gas Substances 0.000 description 52
- 239000010408 film Substances 0.000 description 45
- 229910021417 amorphous silicon Inorganic materials 0.000 description 32
- 238000000151 deposition Methods 0.000 description 25
- 230000008021 deposition Effects 0.000 description 23
- 239000010409 thin film Substances 0.000 description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 18
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 18
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- 239000012298 atmosphere Substances 0.000 description 14
- 239000011889 copper foil Substances 0.000 description 14
- 238000004544 sputter deposition Methods 0.000 description 14
- 239000010935 stainless steel Substances 0.000 description 14
- 229910001220 stainless steel Inorganic materials 0.000 description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 229910004014 SiF4 Inorganic materials 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 9
- 238000004506 ultrasonic cleaning Methods 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 239000000843 powder Substances 0.000 description 7
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000003925 fat Substances 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 5
- 239000003921 oil Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005096 rolling process Methods 0.000 description 4
- 238000004804 winding Methods 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 150000003377 silicon compounds Chemical class 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 235000014593 oils and fats Nutrition 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は太陽電池に代表され
る光起電力装置とその製造方法に関する。TECHNICAL FIELD The present invention relates to a photovoltaic device represented by a solar cell and a manufacturing method thereof.
【０００２】[0002]
【従来の技術】光起電力素子の一つで、その半導体接合
層がアモルファスシリコンから構成されるものは、基体
をシリコンウエハーに限定せず、ガラス、ステンレス、
有機樹脂などの安価な基体も選択できる点が優れてい
る。特にステンレス、有機樹脂は、フィルムに加工する
ことで、ガラスにはない可撓性を備えることができる。
基体をフィルムにすることで、ロール状になったフィル
ム基体から、フィルム基体を薄膜形成室に引き出し薄膜
を形成し、薄膜が形成されたフィルム基体を、再びロー
ル状に巻き取るロール・ツー・ロール方式での薄膜形成
が可能となる。ロール・ツー・ロール方式の装置は、フ
ィルム基体を搬送しながら薄膜を形成することで、薄膜
形成室より大幅に長い基体に均一な薄膜を形成すること
が可能であり、また多重膜の連続形成も、基体搬送方向
にターゲットを並べることで、簡単に実現できるという
特徴を持っている。ロール・ツー・ロール方式で形成さ
れた、金属フィルムを基体として用いたアモルファスシ
リコン薄膜の製造方法は、米国特許第４，３６９，７３
０号明細書に開示されている。可焼性に加え耐熱性にも
優れたステンレスフィルムを基体に用いた光起電力素子
では、基体が不透明であるために、光を半導体接合層へ
基体を透して入射させる基体・透明導電層・半導体接合
層・導電層の順に形成された構成ではなく、基体・導電
層・半導体接合層・透明導電層の順に形成された構成が
適している。またステンレスは導電性があり、基体自体
が半導体接合層の基体側電極としての機能を備えること
ができるため、基体に絶縁体を用いた構成では少なくと
も１層は必要となる基体側電極としての導電層を省略で
きる。基体・導電層・半導体接合層・透明導電層の順に
形成された構成の光起電力素子において、半導体接合層
の光入射側の集電は、透明導電層と、透明導電層上に形
成された導電性の高い物質からなる集電電極でなされて
きた。集電電極は透明導電層形成後に、所望の集電電極
パターンが繰り抜かれたマスクを介して金属を蒸着、あ
るいは金属ワイヤーを導電性の樹脂で接着することで形
成されてきた。こうして形成された光起電力素子を複数
個、直列接続及び並列接続することで、所望の電力を出
力する光起電力装置が形成される。ロール・ツー・ロー
ル方式で形成された、光起電力素子を複数個接続した光
起電力装置は、米国特許第４，４１０，５５８号明細書
に開示されている。光起電力装置の光電変換効率を高め
るためには、光起電力装置を構成する個々の光起電力素
子において、透明導電層と集電電極からなる光入射側電
極はできるだけ低抵抗にして、発熱による損失を小さく
する必要がある。太陽電池に用いられる可視光透過率が
９０％以上の透明酸化物からなる透明導電層は、金属の
１００倍程度の抵抗を有するため、光入射側電極の低抵
抗化のためには、電流が透明導電層内を流れる距離を短
くする手段が有効である。そのため、透明導電層上に集
電電極を稠密に配置し、透明導電層を電流が流れる距離
を短くすることで、光入射側電極の低抵抗化がなされて
きた。2. Description of the Related Art One type of photovoltaic element whose semiconductor junction layer is made of amorphous silicon is not limited to a silicon wafer as a base, but may be made of glass, stainless steel,
The advantage is that inexpensive substrates such as organic resins can be selected. In particular, stainless steel and organic resin can be provided with flexibility that glass does not have, by processing them into a film.
A roll-to-roll process in which a film is formed by drawing the substrate into a thin film forming chamber by forming the film into a thin film by forming the substrate into a film, and winding the film substrate on which the thin film is formed into a roll again. A thin film can be formed by the method. The roll-to-roll system is capable of forming a thin film while transporting a film substrate to form a uniform thin film on a substrate that is significantly longer than the thin film forming chamber. Also, it has a feature that it can be easily realized by arranging the targets in the substrate transfer direction. A method for producing an amorphous silicon thin film using a metal film as a substrate formed by a roll-to-roll method is disclosed in US Pat. No. 4,369,73.
No. 0 discloses it. In a photovoltaic element using a stainless steel film, which has excellent heat resistance as well as calcinability, the base is opaque, so that light is transmitted through the base to the semiconductor bonding layer and the transparent conductive layer A suitable structure is not a structure in which a semiconductor junction layer and a conductive layer are formed in this order, but a structure in which a substrate, a conductive layer, a semiconductor bonding layer, and a transparent conductive layer are formed in this order. Further, since stainless steel has conductivity, and the base itself can have a function as a base-side electrode of the semiconductor bonding layer, at least one layer is required in the structure using the insulator as the base-side electrode. Layers can be omitted. In a photovoltaic device having a structure in which a substrate, a conductive layer, a semiconductor bonding layer, and a transparent conductive layer are formed in this order, current collection on the light incident side of the semiconductor bonding layer is formed on the transparent conductive layer and the transparent conductive layer. This has been done with a collecting electrode made of a highly conductive substance. The collector electrode has been formed by forming a transparent conductive layer and then vapor-depositing a metal through a mask in which a desired collector electrode pattern is cut out or bonding a metal wire with a conductive resin. By connecting a plurality of photovoltaic elements thus formed in series and in parallel, a photovoltaic device that outputs desired power is formed. A photovoltaic device formed by a roll-to-roll method and having a plurality of photovoltaic elements connected thereto is disclosed in US Pat. No. 4,410,558. In order to improve the photoelectric conversion efficiency of the photovoltaic device, in each photovoltaic element that constitutes the photovoltaic device, the light-incident side electrode consisting of the transparent conductive layer and the collecting electrode should have a resistance as low as possible to generate heat. It is necessary to reduce the loss due to. The transparent conductive layer made of a transparent oxide having a visible light transmittance of 90% or more used in a solar cell has a resistance that is about 100 times that of a metal. Means for shortening the distance flowing through the transparent conductive layer is effective. Therefore, the resistance of the light incident side electrode has been reduced by arranging the collecting electrodes densely on the transparent conductive layer and shortening the distance through which the current flows in the transparent conductive layer.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、透明導
電層上に集電電極を稠密に配置するほど、集電電極が入
射光を遮ぎる面積は増加し、光電変換で得られる電力の
一部を損失する。一方、集電電極の幅を細くすること
で、集電電極が入射光を遮ぎる面積を小さくできるが、
この場合には、集電電極の抵抗が高まり発熱による電力
損失が大きくなる。このように光入射側電極の抵抗によ
る損失と、集電電極が入射光を遮ぎることによる損失
は、一方が小さくなれば他方が大きくなるという関係で
あり、従って、集電電極の配置パターンと集電電極の幅
を変化させた場合、光入射側電極の抵抗による損失と、
集電電極が入射光を遮ぎることによる損失の合計は、あ
る最小値以下にはならないという問題があった。本発明
者の設計した光電変換素子では、最小でも最適動作点出
力の３〜４％を占めるジュール熱の発生があった。ま
た、集電電極は透明導電層形成後に、所望の集電電極パ
ターンが繰り抜かれたマスクを介して金属を蒸着、ある
いは金属ワイヤーを導電性の高い樹脂で接着することで
形成されるが、金属蒸着は、蒸着粒子の衝突あるいは蒸
着時の加熱により半導体接合層を劣化させる問題があ
り、金属ワイヤーの接着は、全工程の機械化が困難な複
雑な工程であるため、製造コストを増大させる問題があ
った。こうした問題を解決する方法として、基体・導電
層・半導体接合層・透明導電層の順に形成された構成の
光起電力素子において、透明導電層上に集電電極を形成
することを取り止め、透明導電層の下層で集電する方法
がある。例えば、透明絶縁基体を用いることを前提にし
ている特開昭６１−２０３７１号公報は、透明絶縁体基
体・透明導電層・半導体接合層・裏面導電層がこの順で
形成された光起電力素子において、半導体接合層および
裏面導電層から絶縁された状態でこれらを貫通した金属
接続体を、透明導電層と接続することで、光入射側電極
の抵抗を低下させる方法が開示されている。また、絶縁
体基体を用いることを前提としている特開平２−１１８
１号公報には、絶縁体基体上に第２導電層・絶縁層・第
１導電層・半導体接合層・透明導電層の順に形成された
光起電力素子において、半導体接合層および第１導電層
から絶縁された状態でこれらを貫通し、透明導電層と第
２導電層が接続することで、光起電力側電極の抵抗を低
下させる方法が開示されている。ところで、このような
特開昭６１−２０３７１号公報で開示されたものにおい
ては、光を半導体接合層へ基体を透して入射させるため
に透明基体を用いている。このような装置においては、
ロール・ツー・ロール方式での大面積にわたる薄膜形成
と、有機樹脂フィルムでは困難な基体温度が３００℃以
上での薄膜形成とが可能な、可撓性、耐熱性に優れたス
テンレスなどの金属フィルムからなる不透明導電基体を
用いる場合には、適用することができない。さらに双方
の特許で開示される方法は、半導体接合層が被膜されて
いない時点あるいは導電層で被膜された時点で、レー
ザ、ドライエッチング、ウエットエッチングなどの手段
で、透明導電層まで貫通する穴を開ける工程を含まずに
は成立しないが、この工程は、穴近傍における半導体接
合層の短絡、半導体接合層と導電層との合金化、あるい
は被膜されていない場合には半導体接合層が受ける物理
的損傷など、半導体接合層の特性すなわち光電変換効率
を低下させる問題があった。However, as the collecting electrodes are densely arranged on the transparent conductive layer, the area where the collecting electrodes block the incident light increases, and a part of the electric power obtained by photoelectric conversion is reduced. To lose. On the other hand, by narrowing the width of the collecting electrode, the area where the collecting electrode blocks the incident light can be reduced,
In this case, the resistance of the collector electrode is increased and the power loss due to heat generation is increased. As described above, the loss due to the resistance of the light incident side electrode and the loss due to the current collecting electrode blocking the incident light have a relationship that the smaller one becomes, the larger the other becomes. When the width of the collector electrode is changed, the loss due to the resistance of the light incident side electrode,
There is a problem that the total loss due to the current collecting electrode blocking the incident light does not fall below a certain minimum value. In the photoelectric conversion element designed by the present inventor, Joule heat occupying 3 to 4% of the optimum operating point output was generated at the minimum. Further, the collector electrode is formed by forming a transparent conductive layer and then depositing a metal through a mask in which a desired collector electrode pattern is cut out or bonding a metal wire with a highly conductive resin. Vapor deposition has a problem of deteriorating the semiconductor bonding layer due to collision of vapor deposition particles or heating at the time of vapor deposition, and adhesion of metal wires is a complicated process in which it is difficult to mechanize the whole process, and therefore there is a problem of increasing manufacturing cost. there were. As a method of solving such a problem, in a photovoltaic element having a structure in which a substrate, a conductive layer, a semiconductor bonding layer, and a transparent conductive layer are formed in this order, the formation of a collector electrode on the transparent conductive layer is stopped and the transparent conductive layer is removed. There is a method of collecting current in the lower layer. For example, Japanese Patent Application Laid-Open No. 61-20371, which is premised on the use of a transparent insulating substrate, discloses a photovoltaic element in which a transparent insulating substrate, a transparent conductive layer, a semiconductor bonding layer, and a back conductive layer are formed in this order. Discloses a method of lowering the resistance of the light incident side electrode by connecting a metal connecting body that penetrates the semiconductor junction layer and the back surface conductive layer in a state insulated from the semiconductor bonding layer and the back surface conductive layer to the transparent conductive layer. Moreover, it is premised that an insulating substrate is used.
Japanese Patent Laid-Open Publication No. 1-1990 discloses a photovoltaic element in which a second conductive layer, an insulating layer, a first conductive layer, a semiconductor bonding layer, and a transparent conductive layer are formed in this order on an insulating substrate, in which the semiconductor bonding layer and the first conductive layer are included. There is disclosed a method of lowering the resistance of the photovoltaic side electrode by penetrating these in an insulated state from the above and connecting the transparent conductive layer and the second conductive layer. By the way, in such a device disclosed in Japanese Patent Laid-Open No. 61-20371, a transparent substrate is used to allow light to enter the semiconductor bonding layer through the substrate. In such a device,
A metal film such as stainless steel with excellent flexibility and heat resistance that enables thin film formation over a large area by a roll-to-roll method and thin film formation at a substrate temperature of 300 ° C or higher, which is difficult with an organic resin film. It cannot be applied when an opaque conductive substrate made of is used. Further, the methods disclosed in both patents are such that when the semiconductor bonding layer is not coated or is coated with a conductive layer, a hole penetrating to the transparent conductive layer is formed by laser, dry etching, wet etching or the like. Although it does not apply without including the step of opening, this step is a short circuit of the semiconductor junction layer in the vicinity of the hole, alloying of the semiconductor junction layer and the conductive layer, or physical contact of the semiconductor junction layer when not coated. There is a problem that the characteristics of the semiconductor junction layer, that is, the photoelectric conversion efficiency is deteriorated, such as damage.
【０００４】そこで、本発明は上記した従来装置の問題
点を解決し、光電変換効率が高く、製造設備費用の低減
と歩留まりが改善された製造コストの安価な光起電力装
置とその製造方法を提供することを目的とするものであ
る。Therefore, the present invention solves the above-mentioned problems of the conventional device, and provides a photovoltaic device having a high photoelectric conversion efficiency, a reduced manufacturing facility cost, an improved yield, and a low manufacturing cost, and a manufacturing method thereof. It is intended to be provided.
【０００５】[0005]
【課題を解決するための手段】本発明は、上記目的を達
成するため、その個々の光起電力素子において、光入射
側の電極である透明電極層と、光入射側裏面の不透明導
電基体とを、導電層欠損部で電気的に接触させることに
よって、不透明導電基体に占める光電変換領域を減少さ
せずに、光入射側の抵抗を低くできるようにしたもので
ある。すなわち、本発明の光起電力装置は、不透明導電
基体の上に絶縁体層、導電層、半導体接合層、透明導電
層の順に積層して形成された複数の光起電力素子を、金
属からなる電極接続体を介して直列接続した光起電力装
置であって、前記導電層が絶縁体層を被覆しない導電層
欠損部を複数個備え、該導電層欠損部において前記不透
明導電基体と前記透明導電層とが電気的に接触し、該導
電層欠損部を備えない領域においてそれらが電気的に非
接触とされていることを特徴としている。本発明におい
て、この導電層欠損部は、円形としその相互の位置関係
は規則性を持つようにするか、真直ぐな溝としその相互
の位置関係を平行に構成することができる。また、前記
不透明導電基体と前記透明導電層との電気的接触は、前
記導電層欠損部において前記不透明導電基体の前記透明
導電層へ向う凹みと、前記透明導電層の前記不透明導電
基体へ向う凹みの、一方もしくは双方により行うことが
でき、またそれを前記導電層欠損部において複数層から
なる合金層を形成して行ってもよい。また、前記電極接
続体により、一方の光起電力素子の導電層と、他方の光
起電力素子の不透明導電基体もしくは透明導電層とを接
続し、それを一方の光起電力素子の透明導電層の領域を
構成する、該透明導電層がその下層に前記導電層欠損部
を備えた領域から分割され下層に前記導電層欠損部を備
えない領域で該透明導電層が導電層とは電気的に接触し
ているが不透明基体とは電気的に非接触の領域と、他方
の光起電力素子の不透明導電基体もしくは透明導電層と
に接触させ光起電力装置を構成することができる。さら
に、本発明の光起電力装置の製造方法は、不透明導電基
体の上に絶縁体層、導電層、半導体接合層、透明導電層
がこの順で形成された複数の光起電力素子を、金属から
なる電極接続体を介して直列接続した光起電力装置の製
造方法であって、不透明導電基体の上に絶縁層を形成す
る工程と、前記絶縁層の上に絶縁層を被覆しない導電層
欠損部を複数個有する導電層を形成する工程と、前記導
電層の上に半導体接合層を形成する工程と、前記半導体
接合層の上に透明導電層を形成する工程と、前記導電層
欠損部において前記不透明導電基体と前記透明導電層と
を電気的に接触させる工程とを有していることを特徴と
する。本発明の製造方法においては、前記導電層欠損部
はレーザ照射によって形成されることができる。そし
て、本発明の光起電力装置の製造方法においては前記不
透明導電基体と前記透明導電層とを電気的に接触させる
工程は、前記透明導電層を形成する工程の後に行われる
ことを特徴の一つとしている。また、前記不透明導電基
体と前記透明導電層との電気的接触は、前記導電層欠損
部において前記不透明導電基体を前記透明導電層へ向か
って凹ませる工程と、前記透明導電層を前記不透明導電
基体向かって凹ませる工程の、一方もしくは双方の工程
によって行うことができる。そして、前記不透明導電基
体と前記透明導電層の一方もしくは双方を凹ませる工程
は、鋭突なもので圧力を加える工程で行うようにしても
よい。また、前記導電層欠損部における前記不透明導電
基体と前記透明導電層との電気的接触は、前記導電層欠
損部において前記絶縁体層と前記半導体接合層を合金層
に変化させる工程によって行ってもよい。そして、前記
絶縁体層と前記半導体接合層を合金層に変化させる工程
は、レーザ照射を含む工程で行うことができる。また、
前記直列接続は、金属からなる電極接続体を一方の光起
電力素子の導電層と他方の光起電力素子の不透明導電基
体もしくは透明導電層とに接触させる工程によって行わ
れる。そして、その一方の光起電力素子の導電層に接触
させる工程、および他方の光起電力素子の不透明導電基
体もしくは透明導電層に接触させる工程の、双方または
一方は、レーザ照射を用いた溶着を含む工程によって行
うか、または樹脂を主成分とする物質を介在させる工
程、或は低融点合金の半田を用いた溶着を含む工程によ
って行ってもよい。本発明の製造方法においては、前記
電極接続体による直列接続は、金属からなる電極接続体
を、一方の光起電力素子の透明導電層の領域を構成す
る、該透明導電層がその下層に前記導電層欠損部を備え
た領域から分割され下層に前記導電層欠損部を備えない
領域で該透明導電層が導電層とは電気的に接触している
が不透明基体とは電気的に非接触の領域と、他方の光起
電力素子の不透明導電基体もしくは透明導電層とに、接
触させる工程によって行うことができる。そして、前記
透明導電層の、その下層に前記導電層欠損部を備えた領
域と下層に前記導電層欠損部を備えない領域との分割
は、レーザ照射を含む工程により行うことができる。ま
た、前記透明導電層の、導電層と電気的に接触し不透明
導電基体と電気的に非接触の領域は、レーザ照射を含む
工程により形成することができる。そして、 前記電極
接続体を、一方の光起電力素子の透明導電層の下層に前
記導電層欠損部を備えない領域に接続させる工程、およ
び他方の光起電力素子の不透明導電基体もしくは透明導
電層に接続させる工程の、双方または一方は、レーザを
用いた溶着を含む工程で行ってもよい。また、それらを
樹脂を主成分とする物質を介在させる工程、或は低融点
合金の半田を用いた溶着を含む工程により行ってもよ
い。In order to achieve the above-mentioned object, the present invention provides, in each photovoltaic element thereof, a transparent electrode layer which is an electrode on the light incident side, and an opaque conductive substrate on the back surface on the light incident side. Is electrically contacted at the defective portion of the conductive layer so that the resistance on the light incident side can be lowered without reducing the photoelectric conversion region occupied in the opaque conductive substrate. That is, the photovoltaic device of the present invention comprises a plurality of photovoltaic elements made of metal, which are formed by laminating an insulating layer, a conductive layer, a semiconductor bonding layer, and a transparent conductive layer on an opaque conductive substrate. A photovoltaic device connected in series via an electrode connecting body, wherein the conductive layer has a plurality of conductive layer defect portions that do not cover an insulator layer, and the opaque conductive substrate and the transparent conductive member are provided at the conductive layer defect portions. It is characterized in that it is in electrical contact with the layer, and they are not electrically contacted in a region not having the conductive layer defect portion. In the present invention, the conductive layer deficient portions may be circular so that their mutual positional relationship has regularity, or they may be straight grooves and their mutual positional relationship may be parallel. Further, the electrical contact between the opaque conductive base and the transparent conductive layer is such that the opaque conductive base has a recess facing the transparent conductive layer and the transparent conductive layer has a recess facing the opaque conductive base at the conductive layer defective portion. One or both of them may be performed, and it may be performed by forming an alloy layer composed of a plurality of layers in the conductive layer defect portion. Further, the electrode connection body connects the conductive layer of one photovoltaic element and the opaque conductive substrate or transparent conductive layer of the other photovoltaic element, and connects it to the transparent conductive layer of one photovoltaic element. In the region where the transparent conductive layer is divided from the region having the conductive layer deficient portion in the lower layer and does not have the conductive layer deficient portion in the lower layer, the transparent conductive layer is electrically separated from the conductive layer. A photovoltaic device can be configured by contacting a region that is in contact with but is not electrically contacted with the opaque substrate and the opaque conductive substrate or transparent conductive layer of the other photovoltaic element. Furthermore, the method for manufacturing a photovoltaic device of the present invention comprises a plurality of photovoltaic elements in which an insulating layer, a conductive layer, a semiconductor bonding layer, and a transparent conductive layer are formed in this order on an opaque conductive substrate, A method for manufacturing a photovoltaic device connected in series via an electrode connecting body comprising: a step of forming an insulating layer on an opaque conductive substrate; and a conductive layer defect not covering the insulating layer on the insulating layer. A step of forming a conductive layer having a plurality of parts, a step of forming a semiconductor junction layer on the conductive layer, a step of forming a transparent conductive layer on the semiconductor junction layer, and the conductive layer defect portion. And a step of electrically contacting the opaque conductive substrate with the transparent conductive layer. In the manufacturing method of the present invention, the conductive layer defect portion can be formed by laser irradiation. In the photovoltaic device manufacturing method of the present invention, the step of electrically contacting the opaque conductive substrate and the transparent conductive layer is performed after the step of forming the transparent conductive layer. I am sorry. Further, the electrical contact between the opaque conductive substrate and the transparent conductive layer is performed by denting the opaque conductive substrate toward the transparent conductive layer at the conductive layer deficient portion, and setting the transparent conductive layer to the opaque conductive substrate. It can be carried out by one or both of the steps of making a depression. The step of recessing one or both of the opaque conductive substrate and the transparent conductive layer may be performed by applying pressure with a sharp object. Further, the electrical contact between the opaque conductive substrate and the transparent conductive layer in the conductive layer defective portion may be performed by the step of changing the insulator layer and the semiconductor bonding layer into an alloy layer in the conductive layer defective portion. Good. The step of changing the insulator layer and the semiconductor junction layer into an alloy layer can be performed by a step including laser irradiation. Also,
The series connection is performed by a step of bringing an electrode connection body made of metal into contact with a conductive layer of one photovoltaic element and an opaque conductive substrate or a transparent conductive layer of the other photovoltaic element. Then, both or one of the step of bringing into contact with the conductive layer of the one photovoltaic element and the step of bringing into contact with the opaque conductive substrate or the transparent conductive layer of the other photovoltaic element, welding using laser irradiation is performed. It may be carried out by the step of including, or the step of interposing a substance having a resin as a main component, or the step of including welding using a low melting point alloy solder. In the manufacturing method of the present invention, the series connection by the electrode connecting body constitutes an electrode connecting body made of a metal, and constitutes a region of a transparent conductive layer of one photovoltaic element, the transparent conductive layer being a layer below the transparent conductive layer. The transparent conductive layer is in electrical contact with the conductive layer but is not in electrical contact with the opaque substrate in a region which is divided from the region having the conductive layer defect and does not have the conductive layer defect in the lower layer. This can be performed by the step of contacting the area with the opaque conductive substrate or transparent conductive layer of the other photovoltaic element. Then, the region of the transparent conductive layer having the conductive layer defect portion below it and the region not having the conductive layer defect portion below it can be divided by a step including laser irradiation. Further, the region of the transparent conductive layer that is in electrical contact with the conductive layer and is not in electrical contact with the opaque conductive substrate can be formed by a process including laser irradiation. And a step of connecting the electrode connection body to a region below the transparent conductive layer of one photovoltaic element without the conductive layer defect portion, and an opaque conductive substrate or a transparent conductive layer of the other photovoltaic element. Both or one of the steps of connecting to the above may be performed in a step including welding using a laser. Further, they may be carried out by a step of interposing a substance containing a resin as a main component, or a step including welding using a solder of a low melting point alloy.
【０００６】[0006]
【発明の実施の形態】本発明では、光起電力装置を構成
する個々の光起電力素子は、光入射側の電極である透明
導電層と、光入射側裏面の不透明導電基体とが、導電層
欠損部において電気的に接触されることによって、不透
明導電基体に占める光電変換領域を減少させずに、光入
射側電極の抵抗を低くできる。したがって集電電極が透
明導電層上に配置される構成の光電変換素子に比べ、高
い光電変換効率の光電変換素子を得ることができる。ま
た上記電気的接触は、絶縁層、導電層、半導体接合層、
透明導電層からなる全層形成後に、圧迫もしくはレーザ
照射によってなされる簡単な工程であるから、製造設備
費用の低減と歩留まりを改善し、製造コストを低減でき
る。また、基体にステンレスフィルムなどの可撓性、耐
熱性に優れた不透明導電基体を用いることで、ロール・
ツー・ロール方式での大面積にわたる薄膜形成と、有機
樹脂フィルムでは困難な基体温度が３００℃以上での薄
膜形成が可能となり、さらに基体にこのようなステンレ
スフィルムを用いた場合には、透明導電層と接続された
光入射側電極としての機能を備えることで、絶縁基体を
用いた構成では少なくとも１層は必要となる、透明導電
層と接続された光入射側電極としての導電層を省略でき
る。BEST MODE FOR CARRYING OUT THE INVENTION In the present invention, in each photovoltaic element that constitutes a photovoltaic device, a transparent conductive layer which is an electrode on the light incident side and an opaque conductive substrate on the back surface on the light incident side are electrically conductive. By making electrical contact at the layer defect portion, the resistance of the light incident side electrode can be lowered without reducing the photoelectric conversion region occupied in the opaque conductive substrate. Therefore, a photoelectric conversion element having a higher photoelectric conversion efficiency can be obtained as compared with a photoelectric conversion element having a structure in which the collecting electrode is arranged on the transparent conductive layer. Further, the electrical contact is an insulating layer, a conductive layer, a semiconductor bonding layer,
Since this is a simple process that is performed by pressing or laser irradiation after forming all the layers of the transparent conductive layer, it is possible to reduce the manufacturing equipment cost, improve the yield, and reduce the manufacturing cost. In addition, by using an opaque conductive substrate such as a stainless steel film, which has excellent flexibility and heat resistance, as a substrate,
It is possible to form a thin film over a large area with a two-roll method and to form a thin film at a substrate temperature of 300 ° C or higher, which is difficult with an organic resin film. Furthermore, when such a stainless film is used for the substrate, transparent conductive By providing the function as the light incident side electrode connected to the layer, at least one layer is required in the configuration using the insulating substrate, and the conductive layer as the light incident side electrode connected to the transparent conductive layer can be omitted. .
【０００７】[0007]
【実施例】以下、本発明を実施例に基づいて詳細に説明
する。 ［実施例１］図１は、本発明の実施例１における光起電
力装置を示した断面図であり、図５は、図１で示される
光起電力装置の平面図である。図９は、図１で示される
光起電力装置を構成する光起電力素子を示した断面図で
あり、図１２は、図９で示される光起電力素子の製造工
程を示した説明図である。まず図９、図１２に従って、
光起電力装置を構成する光起電力素子の製造方法を順次
説明する。不透明導電基体１１として、縦１０ｃｍ横５
ｃｍの長方形で、厚さ０．２ｍｍの鏡面研磨されたステ
ンレスＳＵＳ４３０の基体を用意し、アセトン中で超音
波洗浄を５分間、イソプロピルアルコール中で超音波洗
浄を１分間行い、油脂分を除去した。続いて窒素ガスで
希釈したシランガスとアンモニアガスを、ＲＦで励起さ
れたプラズマ中で分解し、２５０℃に保った不透明導電
基体１１上に、絶縁層１２として厚さ２μｍの窒化シリ
コン膜を形成した。続いて４００℃に保った絶縁層１２
上に、アルミニウムターゲットを用いたＡｒ雰囲気中で
のＤＣスパツタリング法で、導電層１３として厚さ５０
００Åのアルミニウム膜を形成した。アルミニウム膜の
表面は、拡散反射が顕著な、微細な凹凸構造となった。
続いて波長１．０６μｍ、パルス周波数４ｋＨｚ、Ｑス
イッチパルス発振、TEM00モードのＮｄ−ＹＡＧレーザ
を用いて、平均レーザ出力を０．４Ｗに調節したスポッ
ト径１００μｍのビームを、導電層１３の所定位置に
０．１msec照射１することで、絶縁層１２が露出する直
径０．８ｍｍの導電層欠損部１８を、縦と横が１０ｍｍ
間隔の格子点２５箇所に形成した。続いて水素ガスで希
釈されたＳｉＨ４ガス、ＳｉＦ４ガス、ＰＨ３ガスを、
ＲＦで励起されたプラズマ中で分解し、２５０℃に保っ
た導電層１３上に、厚さ２００Åのｎ型アモルファスシ
リコン層を形成し、このｎ型アモルファスシリコン層上
に、水素ガスで希釈されたＳｉＨ４ガス、ＳｉＦ４ガス
を、ＲＦで励起されたプラズマ中で分解し、厚さ４００
０Åのｉ型アモルファスシリコン層を形成し、さらにｉ
型アモルファスシリコン層上に、続いて水素ガスで希釈
されたＳｉＨ４ガス、ＢＦ３ガスを、ＲＦで励起された
プラズマ中で分解し、厚さ１００Åのｐ型微結晶シリコ
ン層を形成することで、半導体接合層１４を形成した。
続いてこの半導体接合層１４上に、ＩＴＯターゲットを
用いた酸素雰囲気中ＤＣスパッタリング法で、透明導電
層１５として厚さ７００ÅのＩＴＯ膜を形成した。続い
て光学センサーを用いた方法で、レーザで導電層１３に
形成した導電層欠損部１８を見つけ、この部分をニード
ル状のステンレスＳＵＳ３０４製治具を用いて、透明導
電層１５側、不透明導電基体１１側の双方から同時に、
面に垂直に圧迫２を加えた。その結果膜表面では、透明
導電層１５側、不透明導電基体１１側両面に直径０．２
ｍｍの凹みが形成され、膜内部では、不透明導電基体１
１と透明導電層１５が接触する電気的接触部１９が形成
された。圧迫の程度は、不透明導電基体１１と透明導電
層１５が、導電層１２と接触することなく、電気的接触
部１９を形成する大きさでなくてはならない。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail based on embodiments. [Embodiment 1] FIG. 1 is a sectional view showing a photovoltaic device according to Embodiment 1 of the present invention, and FIG. 5 is a plan view of the photovoltaic device shown in FIG. FIG. 9 is a cross-sectional view showing a photovoltaic element that constitutes the photovoltaic device shown in FIG. 1, and FIG. 12 is an explanatory diagram showing a manufacturing process of the photovoltaic element shown in FIG. is there. First, according to FIG. 9 and FIG.
A method of manufacturing a photovoltaic element that constitutes the photovoltaic device will be sequentially described. As the opaque conductive substrate 11, 10 cm in length and 5 in width
cm, a 0.2 mm thick mirror-polished stainless steel SUS430 substrate was prepared, and ultrasonic cleaning was performed in acetone for 5 minutes and in isopropyl alcohol for 1 minute to remove oil and fat. . Subsequently, silane gas and ammonia gas diluted with nitrogen gas were decomposed in plasma excited by RF, and a silicon nitride film having a thickness of 2 μm was formed as an insulating layer 12 on the opaque conductive substrate 11 kept at 250 ° C. . Subsequently, the insulating layer 12 kept at 400 ° C.
A conductive layer 13 having a thickness of 50 is formed on the upper surface by a DC sputtering method in an Ar atmosphere using an aluminum target.
An aluminum film of 00Å was formed. The surface of the aluminum film had a fine uneven structure in which diffuse reflection was remarkable.
Then, using a Nd-YAG laser of TEM00 mode, Qd switch pulse oscillation with a wavelength of 1.06 μm, a pulse frequency of 4 kHz, a beam with a spot diameter of 100 μm adjusted to an average laser output of 0.4 W was applied to a predetermined position of the conductive layer 13. By irradiating the insulating layer 12 with 0.1 msec for 1 m, the conductive layer deficient portion 18 with a diameter of 0.8 mm is exposed in the vertical and horizontal directions by 10 mm.
It was formed at 25 grid points at intervals. Then, SiH4 gas, SiF4 gas, and PH3 gas diluted with hydrogen gas
An n-type amorphous silicon layer having a thickness of 200 Å was formed on the conductive layer 13 which was decomposed in plasma excited by RF and kept at 250 ° C., and diluted with hydrogen gas on the n-type amorphous silicon layer. SiH4 gas and SiF4 gas are decomposed in plasma excited by RF to obtain a thickness of 400
A 0Å i-type amorphous silicon layer is formed, and i
By subsequently decomposing SiH4 gas and BF3 gas diluted with hydrogen gas in RF-excited plasma on the p-type amorphous silicon layer to form a p-type microcrystalline silicon layer having a thickness of 100Å, a semiconductor is obtained. The bonding layer 14 was formed.
Then, an ITO film having a thickness of 700 Å was formed as the transparent conductive layer 15 on the semiconductor bonding layer 14 by a DC sputtering method in an oxygen atmosphere using an ITO target. Subsequently, the conductive layer defect portion 18 formed on the conductive layer 13 by a laser is found by a method using an optical sensor, and the transparent conductive layer 15 side, the opaque conductive substrate is formed on this portion by using a needle-shaped jig made of stainless steel SUS304. From both 11 side at the same time,
Pressure 2 was applied perpendicular to the plane. As a result, on the film surface, a diameter of 0.2 is formed on both the transparent conductive layer 15 side and the opaque conductive substrate 11 side.
mm recesses are formed, and inside the film, the opaque conductive substrate 1
An electrical contact portion 19 was formed in which 1 and the transparent conductive layer 15 were in contact with each other. The degree of compression should be such that the opaque conductive substrate 11 and the transparent conductive layer 15 form the electrical contact portion 19 without contacting the conductive layer 12.
【０００８】以上の工程で１０個作成された光起電力素
子から光起電力装置を製造する方法を、図１、図５に従
って順次説明する。各々の光起電力素子の端部におい
て、透明導電層１５、半導体接合層１４をエッチング
し、長さ１０ｍｍ幅４ｍｍの導電層露出部１０ａを２箇
所形成した。続いて電極接続体１７ａとして厚さ０．１
ｍｍ長さ５ｍｍ幅２ｍｍの銅箔を２個用意して、導電層
露出部１０ａ上の透明導電層１５に接触しない位置に、
金属粉を含有する導電性樹脂で接着した。次に、各々の
光起電力素子の電極接続体１７ａと不透明導電基体１１
とを、厚さ０．１ｍｍ長さ１０ｍｍ幅５ｍｍの銅箔から
なる電極接続体１７ｂによって、順次直列接続すること
で光起電力装置を作成した。電極接続体１７ｂの不透明
導電基体１１および電極接続体１７ａへの接着は、低融
点合金半田を用いた溶着でなされた。ＡＭ１．５（１０
０ｍＷ／ｃｍ2）光照射下にて、作成された光起電力装
置の電流電圧特性を測定をしたところ、最適動作点にお
いて４．２５Ｗ、１４．４Ｖ、光電変換効率は８．５％
が得られた。透明導電層１５、電気的接触部１９、不透
明導電基体１１、電極接続体１７ａ、１７ｂからなる抵
抗による損失電力を求めたところ、真性光電変換効率で
計算した出力電力の３％未満に抑えることができた。こ
こでの真性光電変換効率とは、それぞれの光起電力素子
について、下層に導電層欠損部１８を含まない透明導電
層１５のある数箇所で、外周をエッチングで取り除き周
囲と絶縁した直径３ｍｍの円形の透明導電層１５と、こ
の円外で透明導電層１５、半導体接合層１４をエッチン
グで取り除き露出させた導電層１３とを電極とし、ＡＭ
１．５光照射下にて測定された最適動作点における光電
変換効率の平均である。A method for manufacturing a photovoltaic device from 10 photovoltaic elements produced in the above steps will be sequentially described with reference to FIGS. At the end portion of each photovoltaic element, the transparent conductive layer 15 and the semiconductor bonding layer 14 were etched to form two conductive layer exposed portions 10a having a length of 10 mm and a width of 4 mm. Subsequently, the electrode connecting body 17a has a thickness of 0.1.
2 pieces of copper foil having a length of 5 mm and a width of 2 mm are prepared, and the copper foil is placed on the exposed portion 10a of the conductive layer at a position not contacting the transparent conductive layer 15.
Bonding was performed with a conductive resin containing metal powder. Next, the electrode connection body 17a of each photovoltaic element and the opaque conductive base 11
A photovoltaic device was produced by sequentially connecting and with the electrode connecting body 17b made of a copper foil having a thickness of 0.1 mm, a length of 10 mm, and a width of 5 mm. The electrode connecting body 17b was adhered to the opaque conductive substrate 11 and the electrode connecting body 17a by welding using a low melting point alloy solder. AM1.5 (10
The current-voltage characteristics of the produced photovoltaic device were measured under irradiation with light of 0 mW / cm 2 ) and found to be 4.25 W and 14.4 V at the optimum operating point, and the photoelectric conversion efficiency was 8.5%.
was gotten. When the power loss due to the resistance composed of the transparent conductive layer 15, the electrical contact portion 19, the opaque conductive substrate 11, and the electrode connectors 17a and 17b is calculated, it can be suppressed to less than 3% of the output power calculated by the intrinsic photoelectric conversion efficiency. did it. Intrinsic photoelectric conversion efficiency here means, for each photovoltaic element, at several places where the transparent conductive layer 15 does not include the conductive layer defect portion 18 in the lower layer, the outer circumference is removed by etching and the diameter is 3 mm, which is insulated from the surroundings. The circular transparent conductive layer 15 and the conductive layer 13 exposed by removing the transparent conductive layer 15 and the semiconductor bonding layer 14 outside the circle by etching are used as electrodes.
It is an average of photoelectric conversion efficiencies at the optimum operating point measured under 1.5 light irradiation.
【０００９】［実施例２］図２は、本発明の実施例２に
おける光起電力装置を示した断面図であり、図６は、図
２で示される光起電力装置の平面図である。図１０は、
図２で示される光起電力装置を構成する光起電力素子を
示した断面図である。まず図１０に従って、光起電力装
置を構成する光起電力素子の製造方法を順次説明する。
不透明導電基体２１として、縦１０ｃｍ横５ｃｍの長方
形で、厚さ０．２ｍｍの鏡面研磨されたステンレスＳＵ
Ｓ４３０の基体を用意し、アセトン中で超音波洗浄を５
分間、イソプロピルアルコール中で超音波洗浄を１分間
行い、油脂分を除去した。続いて酸化シリコンターゲッ
トを用いたＡｒ雰囲気中でのＲＦスパッタリング法で、
不透明導電基体２１上に、絶縁層２２として厚さ２μｍ
の酸化シリコン膜を形成した。続いて４００℃に保った
絶縁層２２上に、アルミニウムターゲットを用いたＡｒ
雰囲気中でのＤＣスパッタリング法で形成された厚さ５
０００Åのアルミニウム膜と、酸化亜鉛ターゲットを用
いたＡｒ雰囲気中でのＤＣスパッタリング法で形成され
た厚さｌ００００Åの酸化亜鉛膜からなる導電層２３を
形成した。アルミニウム膜の表面および酸化亜鉛の表面
は、拡散反射が顕著な、微細な凹凸構造となった。続い
て波長１．０６μｍ、パルス周波数４ｋＨｚ、Ｑスイッ
チパルス発振、TEM00モードのＮｄ−ＹＡＧレーザを用
いて、平均レーザ出力を０．４Ｗに調節したスポット径
１００μｍのビームを、導電層２３の所定位置にｌmsec
照射することで、絶縁層２２が露出する直径０．８ｍｍ
の導電層欠損部２８を、縦と横が１０ｍｍ間隔の格子点
２５箇所に形成した。続いて水素ガスで希釈されたＳｉ
Ｈ４ガス、ＳｉＦ４ガス、ＰＨ３ガスを、ＲＦで励起さ
れたプラズマ中で分解し、２５０℃に保った導電層２３
上に、厚さ２００Åのｎ型アモルファスシリコン層を形
成し、このｎ型アモルファスシリコン層上に、水素ガス
で希釈されたＳｉＨ４ガス、ＳｉＦ４ガスを、ＲＦで励
起されたプラズマ中で分解し、厚さ４０００Åのｉ型ア
モルファスシリコン層を形成し、さらにｉ型アモルファ
スシリコン層上に、続いて水素ガスで希釈されたＳｉＨ
４ガス、ＢＦ３ガスを、ＲＦで励起されたプラズマ中で
分解し、厚さ１００Åのｐ型微結晶シリコン層を形成す
ることで、半導体接合層２４を形成した。続いてこの半
導体接合層２４上に、ＩＴＯターゲットを用いた酸素雰
囲気中ＤＣスパッタリング法で、透明導電層２５として
厚さ７００ÅのＩＴＯ膜を形成した。続いて光学センサ
ーを用いた方法で、レーザで導電層２３に形成した導電
層欠損部２８を見つけ、この部分をニードル状のステン
レスＳＵＳ３０４製治具を用いて、透明導電層２５側よ
り面に垂直に圧迫を加えた。その結果、透明導電層２５
表面に直径０．２ｍｍの凹みが形成され、膜内部では、
不透明導電基体２１と透明導電層２５が接触する電気的
接触部２９が形成された。圧迫の程度は、不透明導電基
体２１と透明導電層２５が、導電層２２と接触すること
なく、電気的接触部２９を形成する大きさでなくてはな
らない。[Second Embodiment] FIG. 2 is a sectional view showing a photovoltaic device according to a second embodiment of the present invention, and FIG. 6 is a plan view of the photovoltaic device shown in FIG. Figure 10
It is sectional drawing which showed the photovoltaic element which comprises the photovoltaic apparatus shown by FIG. First, referring to FIG. 10, a method of manufacturing a photovoltaic element that constitutes a photovoltaic device will be sequentially described.
As the opaque conductive substrate 21, a rectangular SU 10 cm × 5 cm, 0.2 mm thick mirror-polished stainless steel SU
Prepare the substrate of S430 and perform ultrasonic cleaning in acetone.
Ultrasonic cleaning was performed in isopropyl alcohol for 1 minute to remove oil and fat. Then, by an RF sputtering method in an Ar atmosphere using a silicon oxide target,
The thickness of the insulating layer 22 is 2 μm on the opaque conductive substrate 21.
A silicon oxide film was formed. Subsequently, Ar using an aluminum target was placed on the insulating layer 22 kept at 400 ° C.
Thickness 5 formed by DC sputtering method in atmosphere
A conductive layer 23 made of a 000Å aluminum film and a zinc oxide film having a thickness of 10000Å formed by a DC sputtering method in an Ar atmosphere using a zinc oxide target was formed. The surface of the aluminum film and the surface of zinc oxide had a fine uneven structure in which diffuse reflection was remarkable. Then, using a Nd-YAG laser of TEM00 mode, Qd switch pulse oscillation with a wavelength of 1.06 μm, a pulse frequency of 4 kHz, a beam with a spot diameter of 100 μm adjusted to an average laser output of 0.4 W was applied to a predetermined position on the conductive layer 23. Lmsec
The diameter of the insulating layer 22 exposed by irradiation is 0.8 mm
The conductive layer deficient portions 28 were formed at 25 grid points at 10 mm intervals in the vertical and horizontal directions. Then Si diluted with hydrogen gas
Conductive layer 23 in which H4 gas, SiF4 gas, and PH3 gas are decomposed in plasma excited by RF and kept at 250 ° C.
A 200 Å-thick n-type amorphous silicon layer is formed on top of this, and SiH4 gas and SiF4 gas diluted with hydrogen gas are decomposed in plasma excited by RF on this n-type amorphous silicon layer, Forming an i-type amorphous silicon layer having a thickness of 4000 Å, and further forming SiH diluted with hydrogen gas on the i-type amorphous silicon layer.
4 gas and BF3 gas were decomposed in plasma excited by RF to form a p-type microcrystalline silicon layer having a thickness of 100Å, thereby forming the semiconductor bonding layer 24. Subsequently, an ITO film having a thickness of 700 Å was formed as the transparent conductive layer 25 on the semiconductor bonding layer 24 by a DC sputtering method in an oxygen atmosphere using an ITO target. Then, the conductive layer defect portion 28 formed on the conductive layer 23 is found by laser with a method using an optical sensor, and this portion is perpendicular to the surface from the transparent conductive layer 25 side using a needle-shaped jig made of stainless steel SUS304. Added pressure to. As a result, the transparent conductive layer 25
A dent with a diameter of 0.2 mm is formed on the surface, and inside the film,
An electrical contact portion 29 where the opaque conductive substrate 21 and the transparent conductive layer 25 contact each other was formed. The degree of compression should be such that the opaque conductive substrate 21 and the transparent conductive layer 25 form the electrical contact portion 29 without contacting the conductive layer 22.
【００１０】以上の工程で１０個作成された光起電力素
子から光起電力装置を製造する方法を、図２、図６に従
って順次説明する。各々の光起電力素子の端部におい
て、透明導電層２５、半導体接合層２４をエッチング
し、長さ１００ｍｍ幅４ｍｍの導電層露出部２０ａを形
成し、導電層露出部２０ａとは反対側の光起電力素子の
端部においては、透明導電層２５、半導体接合層２４、
導電層２３、絶縁層２２をエッチングし、長さ１００ｍ
ｍ幅４ｍｍの基体露出部２０ｂを形成した。続いて電極
接続体２７ａとして厚さ０．ｌｍｍ長さ５ｍｍ幅２ｍｍ
の銅箔を２個用意して、導電層露出部２０ａ上の透明導
電層２５に接触しない位置に、前述と同じ性能のＮｄ−
ＹＡＧレーザを照射することで溶着した。次に、各々の
光起電力素子の電極接続体２７ａと基体露出部２０ｂと
を、厚さ０．ｌｍｍ長さ１０ｍｍ幅５ｍｍの銅箔からな
る電極接続体２７ｂによって、順次直列接続すること
で、光起電力装置を作成した。電極接続体２７ｂの基体
露出部２０ｂおよび電極接続体２７ａへの接着は、前述
と同じ性能のＮｄ−ＹＡＧレーザを用いた溶着でなされ
た。ＡＭ１．５（１００ｍＷ／ｃｍ2）光照射下にて、
作成された光起電力装置の電流電圧特性を測定をしたと
ころ、最適動作点において４．３５Ｗ、１４．６Ｖ、光
電変換効率は８．７％が得られた。透明導電層２５、電
気的接触部２９、不透明導電基体２１、電極接続体２７
ａ、２７ｂからなる抵抗による損失電力を求めたとこ
ろ、真性光電変換効率で計算した出力電力の３％未満に
抑えることができた。ここでの真性光電変換効率とは、
それぞれの光起電力素子について、下層に導電層欠損部
２８を含まない透明導電層２５のある数箇所で、外周を
エッチングで取り除き周囲と絶縁した直径３ｍｍの円形
の透明導電層２５と、この円外で透明導電層２５、半導
体接合層２４をエッチングで取り除き露出させた導電層
２３とを電極とし、ＡＭ１．５光照射下にて測定された
最適動作点における光電変換効率の平均である。A method for manufacturing a photovoltaic device from 10 photovoltaic elements produced in the above steps will be sequentially described with reference to FIGS. At the end of each photovoltaic element, the transparent conductive layer 25 and the semiconductor bonding layer 24 are etched to form a conductive layer exposed portion 20a having a length of 100 mm and a width of 4 mm, and the light on the side opposite to the conductive layer exposed portion 20a is formed. At the end of the electromotive force element, the transparent conductive layer 25, the semiconductor bonding layer 24,
The conductive layer 23 and the insulating layer 22 are etched to a length of 100 m.
A base exposed portion 20b having a width of 4 mm was formed. Subsequently, the electrode connecting body 27a has a thickness of 0. 1mm length 5mm width 2mm
2 copper foils are prepared, and Nd- having the same performance as described above is placed at a position on the conductive layer exposed portion 20a that does not contact the transparent conductive layer 25.
It was welded by irradiating a YAG laser. Next, the electrode connection body 27a and the base body exposed portion 20b of each photovoltaic element are formed to a thickness of 0. A photovoltaic device was produced by sequentially connecting in series with an electrode connector 27b made of a copper foil having a length of 1 mm, a length of 10 mm, and a width of 5 mm. The electrode connecting body 27b was adhered to the exposed base portion 20b and the electrode connecting body 27a by welding using an Nd-YAG laser having the same performance as described above. Under AM1.5 (100 mW / cm 2 ) light irradiation,
When the current-voltage characteristics of the created photovoltaic device were measured, 4.35 W, 14.6 V and photoelectric conversion efficiency of 8.7% were obtained at the optimum operating point. Transparent conductive layer 25, electrical contact portion 29, opaque conductive substrate 21, electrode connection body 27
When the power loss due to the resistance composed of a and 27b was obtained, it was possible to suppress it to less than 3% of the output power calculated by the intrinsic photoelectric conversion efficiency. The intrinsic photoelectric conversion efficiency here is
In each photovoltaic element, a circular transparent conductive layer 25 with a diameter of 3 mm, which is insulated from the surrounding by removing the outer periphery by etching at several places where the transparent conductive layer 25 does not include the conductive layer defect portion 28 in the lower layer, and this circle This is the average of the photoelectric conversion efficiencies at the optimum operating point measured under AM1.5 light irradiation, using the transparent conductive layer 25 and the conductive layer 23 exposed by removing the semiconductor bonding layer 24 outside as electrodes.
【００１１】［実施例３］図３は、本発明の実施例３に
おける光起電力装置を示した断面図であり、図７は、図
３で示される光起電力装置の平面図である。図１１は、
図３で示される光起電力装置を構成する光起電力素子を
示した断面図であり、図１３は、図１１で示される光起
電力素子の製造工程を示した説明図である。まず図１
１、図１３に従って、光起電力装置を構成する光起電力
素子の製造方法を順次説明する。不透明導電基体３１と
して、縦ｌ０ｃｍ横５ｃｍの長方形で、厚さ０．２ｍｍ
の鏡面研磨されたステンレスＳＵＳ４３０の基体を用意
し、アセトン中で超音波洗浄を５分間、イソプロピルア
ルコール中で超音波洗浄を１分間行い、油脂分を除去し
た。続いて酸化シリコンターゲットを用いたＡｒ雰囲気
中でのＲＦスパッタリング法で、不透明導電基体３１上
に、絶縁層３２として厚さ２μｍの酸化シリコン膜を形
成した。続いて５００℃に保った絶縁層３２上に、銀タ
ーゲットを用いたＡｒ雰囲気中でのＤＣスパッタリング
法で、導電層３３として厚さ５０００Åの銀膜を形成し
た。銀膜の表面は、拡散反射が顕著な、微細な凹凸構造
となった。続いて波長１．０６μｍ、パルス周波数４ｋ
Ｈｚ、Ｑスイッチパルス発振、TEM00モードのＮｄ−Ｙ
ＡＧレーザを用いて、平均レーザ出力を０．５Ｗに調節
したスポット径１００μｍのビームを、導電層３３の所
定位置にｌmsec照射３することで、絶縁層３２が露出す
る直径０．８ｍｍの導電層欠損部３８を、縦と横が１０
ｍｍ間隔の格子点２５箇所に形成した。続いて水素ガス
で希釈されたＳｉＨ４ガス、ＳｉＦ４ガス、ＰＨ３ガス
を、ＲＦで励起されたプラズマ中で分解し、２５０℃に
保った導電層３３上に、厚さ２００Åのｎ型アモルファ
スシリコン層を形成し、このｎ型アモルファスシリコン
層上に、水素ガスで希釈されたＳｉＨ４ガス、ＳｉＦ４
ガスを、ＲＦで励起されたプラズマ中で分解し、厚さ４
０００Åのｉ型アモルファスシリコン層を形成し、さら
にｉ型アモルファスシリコン層上に、続いて水素ガスで
希釈されたＳｉＨ４ガス、ＢＦ３ガスを、ＲＦで励起さ
れたプラズマ中で分解し、厚さ１００Åのｐ型微結晶シ
リコン層を形成することで、半導体接合層３４を形成し
た。続いてこの半導体接合層３４上に、ＩＴＯターゲッ
トを用いた酸素雰囲気中ＤＣスパッタリング法で、透明
導電層３５として厚さ７００ÅのＩＴＯ膜を形成した。
続いて光学センサーを用いた方法で、レーザで導電層３
３に形成した導電層欠損部３８を見つけ、この部分を前
述と同じ性能のＮｄ−ＹＡＧレーザを用いて、透明導電
層３５側より面に垂直に、平均レーザ出力をｌＷに調節
したスポット径１００μｍのビームを１msec照射４し
た。その結果、透明導電層と半導体接合層と絶縁層が混
在した、導電性が金属と同程度である直径０．２ｍｍの
合金層３６が形成された。合金層３６の断面を観察する
と、レーザ照射前アモルファスシリコン半導体接合層で
あった部分と、酸化シリコンであった部分は一様なシリ
コン化合物を形成していたが、ＩＴＯはこれらから独立
した層を形成していた。レーザが与える熱量は、不透明
導電基体３１と透明導電層３５が、導電層３２と接触す
ることなく、合金層３６を形成する大きさでなくてはな
らない。[Third Embodiment] FIG. 3 is a sectional view showing a photovoltaic device according to a third embodiment of the present invention, and FIG. 7 is a plan view of the photovoltaic device shown in FIG. FIG.
It is sectional drawing which showed the photovoltaic element which comprises the photovoltaic device shown in FIG. 3, and FIG. 13 is explanatory drawing which showed the manufacturing process of the photovoltaic element shown in FIG. Figure 1
1 and FIG. 13, a method of manufacturing a photovoltaic element that constitutes a photovoltaic device will be sequentially described. The opaque conductive substrate 31 is a rectangle having a length of 10 cm and a width of 5 cm and a thickness of 0.2 mm.
A mirror-polished stainless steel SUS430 substrate was prepared and subjected to ultrasonic cleaning in acetone for 5 minutes and ultrasonic cleaning in isopropyl alcohol for 1 minute to remove oil and fat. Then, a silicon oxide film having a thickness of 2 μm was formed as the insulating layer 32 on the opaque conductive substrate 31 by an RF sputtering method in an Ar atmosphere using a silicon oxide target. Subsequently, a 5000 Å thick silver film was formed as the conductive layer 33 on the insulating layer 32 kept at 500 ° C. by a DC sputtering method in an Ar atmosphere using a silver target. The surface of the silver film had a fine uneven structure with remarkable diffuse reflection. Then, wavelength 1.06μm, pulse frequency 4k
Hz, Q switch pulse oscillation, TEM00 mode Nd-Y
A conductive layer having a diameter of 0.8 mm where the insulating layer 32 is exposed by irradiating a predetermined position of the conductive layer 33 with a beam having a spot diameter of 100 μm and adjusting the average laser output to 0.5 W using an AG laser. The missing part 38 is 10 in length and width.
It was formed at 25 grid points at mm intervals. Subsequently, SiH4 gas, SiF4 gas, and PH3 gas diluted with hydrogen gas are decomposed in plasma excited by RF, and an n-type amorphous silicon layer having a thickness of 200 Å is formed on the conductive layer 33 kept at 250 ° C. SiH4 gas, SiF4, which is formed and diluted with hydrogen gas, is formed on the n-type amorphous silicon layer.
The gas is decomposed in a plasma excited by RF to a thickness of 4
A 000 Å i-type amorphous silicon layer is formed, and then SiH4 gas and BF3 gas diluted with hydrogen gas are decomposed in plasma excited by RF to form a 100 Å-thick layer on the i-type amorphous silicon layer. The semiconductor junction layer 34 was formed by forming the p-type microcrystalline silicon layer. Then, an ITO film having a thickness of 700 Å was formed as the transparent conductive layer 35 on the semiconductor bonding layer 34 by a DC sputtering method in an oxygen atmosphere using an ITO target.
Then, the conductive layer 3 is irradiated with a laser by a method using an optical sensor.
The conductive layer deficient portion 38 formed in No. 3 was found, and this portion was made perpendicular to the surface from the transparent conductive layer 35 side and the average laser output was adjusted to 1 W using an Nd-YAG laser having the same performance as described above, and the spot diameter was 100 μm. The beam was irradiated for 1 msec4. As a result, an alloy layer 36 having a diameter of 0.2 mm, in which the transparent conductive layer, the semiconductor bonding layer, and the insulating layer were mixed, and whose conductivity was about the same as that of a metal, was formed. When observing the cross section of the alloy layer 36, a uniform silicon compound was formed in the part that was the amorphous silicon semiconductor bonding layer before laser irradiation and the part that was silicon oxide, but ITO formed a layer independent of these. Had formed. The amount of heat given by the laser must be such that the opaque conductive substrate 31 and the transparent conductive layer 35 form the alloy layer 36 without coming into contact with the conductive layer 32.
【００１２】以上の工程で１０個作成された光起電力素
子から光起電力装置を製造する方法を、図３、図７に従
って順次説明する。各々の光起電力素子の、下層に導電
層欠損部３８を備えない端部において、前述と同じ性能
のＮｄ−ＹＡＧレーザを用いて、平均レーザ出力を１．
２Ｗに調節した、スボット径ｌ００μｍのビームをｌ０
０ｍｍ／ｓｅｃの走査速度で照射し、長さ１００ｍｍ幅
０．５ｍｍの透明導電層分割溝３０ｂを形成した。これ
によって下層に導電層欠損部３８がないために、透明導
電層が不透明導電基体３１と絶縁された、長さ１００ｍ
ｍ幅３ｍｍの導電層接続部３０ａが形成された。続いて
導電層接続部３０ａにおいて、平均レーザ出力を０．７
Ｗに調節したスポット径１００μｍのビームを１msec照
射した。その結果、透明導電層と半導体接合層と導電層
が混在した、導電性が金属と同程度である直径０．３ｍ
ｍの導電層接続層３０ｃが形成された。導電層接続層３
０ｃの断面を観察すると、レーザ照射前アモルファスシ
リコン半導体接合層であった部分と、銀層であった部分
は一様な合金を形成していたが、ＩＴＯはこれらから独
立した層を形成していた。続いて電極接続体３７ａとし
て厚さ０．１ｍｍ長さ５ｍｍ幅２ｍｍの銅箔を２個用意
して、導電層露出部３０ａ上の透明導電層３５に接触し
ない位置で、かつ導電層接続層３０ｃを覆う位置に、金
属粉を含有する導電性樹脂で接着した。次に、各々の光
起電力素子の電極接続体３７ａと不透明導電基体３１と
を、厚さ０．１ｍｍ長さ１０ｍｍ幅５ｍｍの銅箔からな
る電極接続体３７ｂによって、順次直列接続することで
光起電力装置を作成した。電極接続体３７ｂの不透明導
電基体３１および電極接続体３７ａへの接着は、金属粉
を含有する導電性樹脂を介在させることでなされた。Ａ
Ｍ１．５（１００ｍＷ／ｃｍ2）光照射下にて、作成さ
れた光起電力装置の電流電圧特性を測定をしたところ、
最適動作点において４．３Ｗ、１４．５Ｖ、光電変換効
率は８．６％が得られた。透明導電層３５、電気的接触
部３９、不透明導電基体３１、電極接続体３７ａ、３７
ｂからなる抵抗による損失電力を求めたところ、真性光
電変換効率で計算した出力電力の３％未満に抑えること
ができた。ここでの真性光電変換効率とは、それぞれの
光起電力素子について、下層に導電層欠損部３８を含ま
ない透明導電層３５のある数箇所で、外周をエッチング
で取り除き周囲と絶縁した直径３ｍｍの円形の透明導電
層３５と、この円外で透明導電層３５、半導体接合層３
４をエッチングで取り除き露出させた導電層３３とを電
極とし、ＡＭｌ．５光照射下にて測定された最適動作点
における光電変換効率の平均である。A method of manufacturing a photovoltaic device from the photovoltaic elements manufactured by the above 10 steps will be sequentially described with reference to FIGS. 3 and 7. At the end of each photovoltaic element, which does not have the conductive layer defect portion 38 in the lower layer, an average laser output of 1. Nd-YAG laser having the same performance as described above was used.
A beam with a sbot diameter of 100 μm adjusted to 2 W
Irradiation was performed at a scanning speed of 0 mm / sec to form a transparent conductive layer dividing groove 30b having a length of 100 mm and a width of 0.5 mm. As a result, the transparent conductive layer is insulated from the opaque conductive substrate 31 because there is no conductive layer defect portion 38 in the lower layer, and the length is 100 m.
A conductive layer connecting portion 30a having an m width of 3 mm was formed. Then, in the conductive layer connecting portion 30a, the average laser output is 0.7
A beam with a spot diameter of 100 μm adjusted to W was irradiated for 1 msec. As a result, the transparent conductive layer, the semiconductor bonding layer, and the conductive layer are mixed, and the conductivity is about the same as that of the metal. The diameter is 0.3 m.
m conductive layer connecting layer 30c was formed. Conductive layer connection layer 3
Observing the cross section of 0c, a uniform alloy was formed in the portion that was the amorphous silicon semiconductor bonding layer before laser irradiation and the portion that was the silver layer, but ITO formed a layer independent of these. It was Subsequently, two copper foils each having a thickness of 0.1 mm, a length of 5 mm, and a width of 2 mm were prepared as the electrode connecting body 37a, and the conductive layer connecting layer 30c was provided at a position not contacting the transparent conductive layer 35 on the conductive layer exposed portion 30a. Was adhered to the position to cover with a conductive resin containing metal powder. Next, the electrode connection body 37a of each photovoltaic element and the opaque conductive substrate 31 are sequentially connected in series by an electrode connection body 37b made of a copper foil having a thickness of 0.1 mm, a length of 10 mm, and a width of 5 mm. An electromotive device was created. The electrode connecting body 37b was adhered to the opaque conductive substrate 31 and the electrode connecting body 37a by interposing a conductive resin containing metal powder. A
When the current-voltage characteristics of the photovoltaic device prepared were measured under irradiation with M1.5 (100 mW / cm 2 ) light,
At the optimum operating point, 4.3 W and 14.5 V were obtained, and the photoelectric conversion efficiency was 8.6%. Transparent conductive layer 35, electrical contact portion 39, opaque conductive substrate 31, electrode connection bodies 37a, 37
When the power loss due to the resistance consisting of b was obtained, it was possible to suppress it to less than 3% of the output power calculated by the intrinsic photoelectric conversion efficiency. Intrinsic photoelectric conversion efficiency here means, for each photovoltaic element, at several locations where there is a transparent conductive layer 35 that does not include the conductive layer defect portion 38 in the lower layer, the outer periphery is removed by etching and the diameter is 3 mm, which is insulated from the surroundings. The circular transparent conductive layer 35, and the transparent conductive layer 35 and the semiconductor bonding layer 3 outside the circle.
4 is removed by etching, and the exposed conductive layer 33 is used as an electrode. It is the average of the photoelectric conversion efficiencies at the optimum operating point measured under 5 light irradiation.
【００１３】［実施例４］図４は、本発明の実施例４に
おける光起電力装置を示した断面図であり、図８は、図
４で示される光起電力装置の平面図である。図１１は、
図４で示される光起電力装置を構成する光起電力素子を
示した断面図であり、図１３は、図１１で示される光起
電力素子の製造工程を示した説明図である。まず図１
１、図１３に従って、光起電力装置を構成する光起電力
素子の製造方法を順次説明する。不透明導電基体４１と
して、縦ｌ０ｃｍ横５ｃｍの長方形で、厚さ０．２ｍｍ
の鏡面研磨されたステンレスＳＵＳ４３０の基体を用意
し、アセトン中で超音波洗浄を５分間、イソプロピルア
ルコール中で超音波洗浄を１分間行い、油脂分を除去し
た。続いて窒素ガスで希釈したシランガスとアンモニア
ガスを、ＲＦで励起されたプラズマ中で分解し、２５０
℃に保った不透明導電基体４１上に、絶縁層４２として
厚さ２μｍの窒化シリコン膜を形成した。続いて４００
℃に保った絶縁層４２上に、アルミニウムターゲットを
用いたＡｒ雰囲気中でのＤＣスパッタリング法で形成さ
れた厚さ５０００Åのアルミニウム膜と、酸化亜鉛ター
ゲットを用いたＡｒ雰囲気中でのＤＣスパッタリング法
で形成された厚さｌ００００Åの酸化亜鉛膜からなる導
電層４３を形成した。アルミニウム膜の表面および酸化
亜鉛の表面は、拡散反射が顕著な、微細な凹凸構造とな
った。続いて波長１．０６μｍ、パルス周波数４ｋＨ
ｚ、Ｑスイッチパルス発振、TEM00モードのＮｄ−ＹＡ
Ｇレーザを用いて、平均レーザ出力を０．５Ｗに調節し
たスポット径１００μｍのビームを、導電層４３の所定
位置に１００ｍｍ／ｓｅｃの走査速度で照射３すること
で、絶縁層４２が露出する幅０．４ｍｍ長さ５ｍｍの短
冊状の導電層欠損部４８を、縦が１８ｍｍ間隔で横が１
０ｍｍ間隔の格子点３０箇所に形成した。続いて水素ガ
スで希釈されたＳｉＨ４ガス、ＳｉＦ４ガス、ＰＨ３ガ
スを、ＲＦで励起されたプラズマ中で分解し、２５０℃
に保った導電層４３上に、厚さ２００Åのｎ型アモルフ
ァスシリコン層を形成し、このｎ型アモルファスシリコ
ン層上に、水素ガスで希釈されたＳｉＨ４ガス、ＳｉＦ
４ガスを、ＲＦで励起されたプラズマ中で分解し、厚さ
４０００Åのｉ型アモルファスシリコン層を形成し、さ
らにｉ型アモルファスシリコン層上に、続いて水素ガス
で希釈されたＳｉＨ４ガス、ＢＦ３ガスを、ＲＦで励起
されたプラズマ中で分解し、厚さ１００Åのｐ型微結晶
シリコン層を形成することで、半導体接合層４４を形成
した。続いてこの半導体接合層４４上に、ＩＴＯターゲ
ットを用いた酸素雰囲気中ＤＣスパッタリング法で、透
明導電層４５として厚さ７００ÅのＩＴＯ膜を形成し
た。続いて光学センサーを用いた方法で、レーザで導電
層４３に形成した導電層欠損部４８を見つけ、この部分
を前述と同じ性能のＮｄ−ＹＡＧレーザを用いて、透明
導電層４５側より面に垂直に、平均レーザ出力を１Ｗに
調節したスポット径１００μｍのビームをｌ００ｍｍ／
ｓｅｃの走査速度で照射４した。その結果、透明導電層
と半導体接合層と絶縁層が混在した、導電性が金属と同
程度である幅０．１ｍｍ長さ４ｍｍの合金層４６が形成
された。合金層４６の断面を観察すると、レーザ照射前
アモルファスシリコン半導体接合層であった部分と、窒
化シリコンであった部分は一様なシリコン化合物を形成
していたが、ＩＴＯはこれらから独立した層を形成して
いた。レーザが与える熱量は、不透明導電基体４１と透
明導電層４５が、導電層４２と接触することなく、合金
層４６を形成する大きさでなくてはならない。[Fourth Embodiment] FIG. 4 is a sectional view showing a photovoltaic device according to a fourth embodiment of the present invention, and FIG. 8 is a plan view of the photovoltaic device shown in FIG. FIG.
It is sectional drawing which showed the photovoltaic element which comprises the photovoltaic device shown in FIG. 4, and FIG. 13 is explanatory drawing which showed the manufacturing process of the photovoltaic element shown in FIG. Figure 1
1 and FIG. 13, a method of manufacturing a photovoltaic element that constitutes a photovoltaic device will be sequentially described. As the opaque conductive substrate 41, a rectangle having a length of 10 cm and a width of 5 cm and a thickness of 0.2 mm
A mirror-polished stainless steel SUS430 substrate was prepared and subjected to ultrasonic cleaning in acetone for 5 minutes and ultrasonic cleaning in isopropyl alcohol for 1 minute to remove oil and fat. Subsequently, silane gas and ammonia gas diluted with nitrogen gas are decomposed in plasma excited by RF, and 250
A silicon nitride film having a thickness of 2 μm was formed as an insulating layer 42 on the opaque conductive substrate 41 kept at ℃. Then 400
A 5000 Å-thick aluminum film formed by DC sputtering in an Ar atmosphere using an aluminum target and a DC sputtering method in an Ar atmosphere using a zinc oxide target on the insulating layer 42 kept at ℃. A conductive layer 43 made of the formed zinc oxide film having a thickness of 10000 Å was formed. The surface of the aluminum film and the surface of zinc oxide had a fine uneven structure in which diffuse reflection was remarkable. Next, wavelength 1.06 μm, pulse frequency 4 kHz
z, Q switch pulse oscillation, TEM00 mode Nd-YA
The width at which the insulating layer 42 is exposed by irradiating a predetermined position of the conductive layer 43 at a scanning speed of 100 mm / sec 3 with a beam having a spot diameter of 100 μm whose average laser output is adjusted to 0.5 W using a G laser. 0.4 mm long and 5 mm long strip-shaped conductive layer missing portions 48 are arranged at a length of 18 mm and a width of 1 mm.
It was formed at 30 grid points at 0 mm intervals. Subsequently, SiH4 gas, SiF4 gas, and PH3 gas diluted with hydrogen gas are decomposed in plasma excited by RF,
An n-type amorphous silicon layer having a thickness of 200 Å is formed on the conductive layer 43 kept at the above temperature, and SiH4 gas and SiF diluted with hydrogen gas are formed on the n-type amorphous silicon layer.
4 gas is decomposed in plasma excited by RF to form an i-type amorphous silicon layer having a thickness of 4000 Å, and further SiH4 gas and BF3 gas diluted with hydrogen gas are formed on the i-type amorphous silicon layer. Was decomposed in plasma excited by RF to form a p-type microcrystalline silicon layer having a thickness of 100Å, thereby forming the semiconductor bonding layer 44. Subsequently, an ITO film having a thickness of 700 Å was formed as the transparent conductive layer 45 on the semiconductor bonding layer 44 by a DC sputtering method in an oxygen atmosphere using an ITO target. Subsequently, a conductive layer defect portion 48 formed in the conductive layer 43 is found by a laser using a method using an optical sensor, and this portion is made to face the transparent conductive layer 45 side by using an Nd-YAG laser having the same performance as described above. Vertically, a beam with a spot diameter of 100 μm with the average laser power adjusted to 1 W was set to 100 mm /
Irradiation 4 was performed at a scanning speed of sec. As a result, an alloy layer 46 having a width of 0.1 mm and a length of 4 mm, in which the transparent conductive layer, the semiconductor bonding layer, and the insulating layer were mixed, and the conductivity of which was about the same as that of the metal, was formed. When observing the cross section of the alloy layer 46, a part of the amorphous silicon semiconductor bonding layer before laser irradiation and a part of silicon nitride formed a uniform silicon compound, but ITO formed a layer independent of these. Had formed. The amount of heat given by the laser should be such that the opaque conductive substrate 41 and the transparent conductive layer 45 form the alloy layer 46 without coming into contact with the conductive layer 42.
【００１４】以上の工程で１０個作成された光起電力素
子から光起電力装置を製造する方法を、図４、図８に従
って順次説明する。各々の光起電力素子の、下層に導電
層欠損部４８を備えない端部において、前述と同じ性能
のＮｄ−ＹＡＧレーザを用いて、平均レーザ出力を１．
２Ｗに調節した、スポット径ｌ００μｍのビームを１０
０ｍｍ／ｓｅｃの走査速度で照射し、長さｌ００ｍｍ幅
０．５ｍｍの透明導電層分割溝４０ｂを形成した。これ
によって下層に導電層欠損部４８がないために、透明導
電層が不透明導電基体４１と絶縁された、長さ１００ｍ
ｍ幅３ｍｍの導電層接続部４０ａが形成された。続いて
導電層接続部４０ａにおいて、平均レーザ出力を０．７
Ｗに調節したスポット径１００μｍのビームを１msec照
射した。その結果、透明導電層と半導体接合層と導電層
が混在した、導電性が金属と同程度である直径０．３ｍ
ｍの導電層接続層４０ｃが形成された。導電層接続層４
０ｃの断面を観察すると、レーザ照射前アモルファスシ
リコン半導体接合層であった部分と、銀層であった部分
は一様な合金を形成していたが、ＩＴＯはこれらから独
立した層を形成していた。続いて電極接続体４７ａとし
て厚さ０．１ｍｍ長さ５ｍｍ幅２ｍｍの銅箔を２個用意
して、導電層露出部４０ａ上の透明導電層４５に接触し
ない位置で、かつ導電層接続層４０ｃを覆う位置に、金
属粉を含有する導電性樹脂で接着した。次に、各々の光
起電力素子の電極接続体４７ａと透明導電層４５とを、
厚さ０．ｌｍｍ長さ１０ｍｍ幅５ｍｍの銅箔からなる電
極接続体４７ｂで順次接続することで、光起電力素子が
直列接続された光起電力装置を作成した。電極接続体４
７ｂの透明導電層４５への接着は、金属粉を含有する導
電性樹脂を介在させることでなされ、電極接続体４７ｂ
の電極接続体４７ａへの接着は、低融点合金半田による
溶着でなされた。ＡＭ１．５（１００ｍＷ／ｃｍ2）光
照射下にて、作成された光起電力装置の電流電圧特性を
測定をしたところ、最適動作点において４．４０Ｗ、１
４．９Ｖ、光電変換効率は８．８％が得られた。透明導
電層４５、電気的接触部４９、不透明導電基体４１、電
極接続体４７ａ、４７ｂからなる抵抗による損失電力を
求めたところ、真性光電変換効率で計算した出力電力の
３％未満に抑えることができた。ここでの真性光電変換
効率とは、それぞれの光起電力素子について、下層に導
電層欠損部４８を含まない透明導電層４５のある数箇所
で、外周をエッチングで取り除き周囲と絶縁した直径３
ｍｍの円形の透明導電層４５と、この円外で透明導電層
４５、半導体接合層４４をエッチングで取り除き露出さ
せた導電層４３とを電極とし、ＡＭ１．５光照射下にて
測定された最適動作点における光電変換効率の平均であ
る。A method of manufacturing a photovoltaic device from the photovoltaic elements produced by the above 10 steps will be sequentially described with reference to FIGS. 4 and 8. At the end of each photovoltaic element that does not have the conductive layer defect 48 in the lower layer, an average laser output of 1. Nd-YAG laser having the same performance as described above was used.
A beam with a spot diameter of 100 μm adjusted to 2 W
Irradiation was performed at a scanning speed of 0 mm / sec to form a transparent conductive layer dividing groove 40b having a length of 100 mm and a width of 0.5 mm. As a result, the transparent conductive layer is insulated from the opaque conductive substrate 41 because there is no conductive layer defect 48 in the lower layer, and the length is 100 m.
A conductive layer connecting portion 40a having an m width of 3 mm was formed. Then, in the conductive layer connecting portion 40a, the average laser output is 0.7
A beam with a spot diameter of 100 μm adjusted to W was irradiated for 1 msec. As a result, the transparent conductive layer, the semiconductor bonding layer, and the conductive layer are mixed, and the conductivity is about the same as that of the metal. The diameter is 0.3 m.
m conductive layer connecting layer 40c was formed. Conductive layer connection layer 4
Observing the cross section of 0c, a uniform alloy was formed in the portion that was the amorphous silicon semiconductor bonding layer before laser irradiation and the portion that was the silver layer, but ITO formed a layer independent of these. It was Subsequently, two copper foils each having a thickness of 0.1 mm, a length of 5 mm, and a width of 2 mm are prepared as the electrode connecting body 47a, and the conductive layer connecting layer 40c is provided at a position not contacting the transparent conductive layer 45 on the conductive layer exposed portion 40a. Was adhered to the position to cover with a conductive resin containing metal powder. Next, the electrode connecting body 47a and the transparent conductive layer 45 of each photovoltaic element are
Thickness 0. A photovoltaic device in which photovoltaic elements were connected in series was produced by sequentially connecting with an electrode connecting body 47b made of a copper foil having a length of 1 mm, a length of 10 mm, and a width of 5 mm. Electrode connector 4
7b is adhered to the transparent conductive layer 45 by interposing a conductive resin containing metal powder, and the electrode connecting body 47b
The electrode connection body 47a was bonded by welding with a low melting point alloy solder. The current-voltage characteristics of the photovoltaic device produced were measured under irradiation with AM1.5 (100 mW / cm 2 ) light and found to be 4.40 W and 1 at the optimum operating point.
4.9 V and a photoelectric conversion efficiency of 8.8% were obtained. When the power loss due to the resistance composed of the transparent conductive layer 45, the electrical contact portion 49, the opaque conductive substrate 41, and the electrode connectors 47a and 47b was calculated, it could be suppressed to less than 3% of the output power calculated by the intrinsic photoelectric conversion efficiency. did it. Intrinsic photoelectric conversion efficiency here means, for each photovoltaic element, a diameter of 3 at which the outer periphery is removed by etching and insulated from the surroundings at several locations where the transparent conductive layer 45 that does not include the conductive layer defect portion 48 is present in the lower layer.
Optimum measured under irradiation with AM1.5 light by using a circular transparent conductive layer 45 of mm and the conductive layer 43 exposed by removing the transparent conductive layer 45 and the semiconductor bonding layer 44 outside the circle by etching. It is the average of the photoelectric conversion efficiency at the operating point.
【００１５】［実施例５］図１は、本発明の実施例５に
おける光起電力装置を示した断面図であり、図５は、図
１で示される光起電力装置の平面図である。図１１は、
図１で示される光起電力装置を構成する光起電力素子を
示した断面図であり、図１３は、図１１で示される光起
電力素子の製造工程を示した説明図である。図１６は、
図１１および図１３で示される構成の光起電力素子を製
造する装置の概略図である。まず図１１、図１３、図１
６に従って、光起電力装置を構成する光起電力素子の製
造方法を順次説明する。図１６に示す薄膜形成装置は、
ロール状になったフィルム基体から、フィルム基体を薄
膜形成室に引き出し薄膜を形成し、薄膜が形成されたフ
ィルム基体を、再びロール状に巻き取るロール・ツー・
ロール方式の装置である。ロール・ツー・ロール方式の
装置は、フィルム基体を搬送しながら薄膜を形成するこ
とで、薄膜形成室より大幅に長い基体に均一な薄膜を形
成することが可能であり、また多重膜の違続形成も、基
体搬送方向にターゲットを並べることで、簡単に実現で
きるという特徴を持っている。不透明導電基体５１とし
て、有機溶剤あるいはアルカリ溶剤で油脂分を除去し
た、厚さ０．１ｍｍ幅１００ｍｍ長さ１００ｍの鏡面研
磨されたステンレスＳＵＳ４３０製フイルム基体をロー
ル状で用意した。ロール状にされた不透明導電基体５１
は、送り出し室１００から引き出され、絶縁層堆積室１
０１、導電層堆積室１０２、レーザ照射室１０３、ｎ層
堆積室１０４、ｉ層堆積室１０５、ｐ層堆積室１０６、
透明導電層堆積室１０７、レーザ照射室１０８を搬送速
度５００ｍｍ／ｍｉｎで通過することで、図５に示され
る構成の光起電力素子となった。前述の各真空室では以
下に示す工程が行われた。絶縁層堆積室１０１では、窒
素ガスで希釈したシランガスとアンモニアガスからなる
堆積ガス１１１を、電極１２１にＲＦを印加することで
励起されたプラズマ中で分解し、２５０℃に保った不透
明導電基体５１上に、絶縁層５２として厚さ２μｍの窒
化シリコン膜を形成した。導電層堆積室１０２ではＡｒ
からなる不活性ガス１１２中で、電極１２２上に設けら
れた銀ターゲットを用いた、ＤＣスパッタリング法によ
り、導電層５３として厚さ５０００Åの銀膜を、５００
℃に保った絶縁層５２上に形成した。銀膜の表面は、拡
散反射が顕著な、微細な凹凸構造となった。レーザ照射
室１０３では、波長１．０６μｍ、パルス周波数４ｋＨ
ｚ、ｑスイッチパルス発振、ＴＢＭ００モードのＮｄ−
ＹＡＧレーザ１２３を用いて、平均レーザ出力を０．５
Ｗに調節したスポット径１００μｍのビームを、導電層
５３の所定位置に１ｍｓｅｃ照射３することで、絶縁層
５２が露出する直径０．８ｍｍの導電層欠損部５８を、
不透明導電基体５１の幅方向にｌ０ｍｍ間隔で１０箇所
形成する。これを不透明導電基体５１が１０ｍｍ搬送さ
れる毎に繰り返すことで、導電層欠損部５８が、幅方向
に１０列の１０ｍｍ間隔の格子点として形成した。ｎ層
堆積室１０４では、水素ガスで希釈されたＳｉＨ４ガ
ス、ＳｉＦ４ガス、ＰＨ３ガスを、電極１２４にＲＦを
印加することで励起されたプラズマ中で分解し、２５０
℃に保った導電層５３上に、厚さ２００Åのｎ型アモル
ファスシリコン層を形成し、続いてｉ層堆積室１０５で
は、水素ガスで希釈されたＳｉＨ４ガス、ＳｉＦ４ガス
を、電極１２５にＲＦを印加することで励起されたプラ
ズマ中で分解し、ｎ型アモルファスシリコン層上に、厚
さ４０００Åのｉ型アモルファスシリコン層を形成し、
続いてｐ層堆積室１０６では、水素ガスで希釈されたＳ
ｉＨ４ガス、ＢＦ３ガスを、電極１２６にＲＦを印加す
ることで励起されたプラズマ中で分解し、ｉ型アモルフ
ァスシリコン層上に、厚さ１００Åのｐ型微結晶シリコ
ン層を形成することで、半導体接合層５４を形成した。
透明導電層堆積室１０７ではＡｒと酸素からなる反応性
ガス１１７中で、電極１２７上に設けられたＩＴＯター
ゲットを用いた、ＤＣスパッタリング法により、透明導
電層５５として厚さ７００ÅのＩＴＯ膜を半導体接合層
５４上に形成した。レーザ照射室１０８で、光学センサ
ー１１８を用いた方法で、レーザで導電層５３に形成し
た導電層欠損部５８を見つけ、この部分を前述と同じ性
能のＮｄ−ＹＡＧレーザ１２８を用いて、透明導電層５
５側より面に垂直に、平均レーザ出力を１ｗに調節した
スポット径１００μｍのビームを１msec照射４した。そ
の結果、透明導電層と半導体接合層と絶縁層が混在し
た、導電性が金属と同程度である直径０．２ｍｍの合金
層５６が形成された。合金層５６の断面を観察すると、
レーザ照射前アモルファスシリコン半導体接合層であっ
た部分と、窒化シリコンであった部分は一様なシリコン
化合物を形成していたが、ＩＴＯはこれらから独立した
層を形成していた。レーザが与える熱量は、不透明導電
基体５１と透明導電層５５が、導電層５２と接触するこ
となく、合金層５６を形成する大きさでなくてはならな
い。[Embodiment 5] FIG. 1 is a sectional view showing a photovoltaic device according to Embodiment 5 of the present invention, and FIG. 5 is a plan view of the photovoltaic device shown in FIG. FIG.
It is sectional drawing which showed the photovoltaic element which comprises the photovoltaic device shown in FIG. 1, and FIG. 13 is explanatory drawing which showed the manufacturing process of the photovoltaic element shown in FIG. FIG.
It is a schematic diagram of the apparatus which manufactures the photovoltaic element of the structure shown in FIG. 11 and FIG. First, FIG. 11, FIG. 13, and FIG.
6, the method of manufacturing the photovoltaic element that constitutes the photovoltaic device will be sequentially described. The thin film forming apparatus shown in FIG.
A roll-to-roll process in which a film substrate is pulled out from a rolled film substrate into a thin film forming chamber, a thin film is formed, and the film substrate on which the thin film is formed is wound into a roll again.
It is a roll type device. The roll-to-roll system is capable of forming a thin film while transporting the film substrate to form a uniform thin film on a substrate significantly longer than the thin film forming chamber. The formation also has a feature that it can be easily realized by arranging the targets in the substrate transfer direction. As the opaque electroconductive substrate 51, a mirror-polished stainless steel SUS430 film substrate having a thickness of 0.1 mm, a width of 100 mm and a length of 100 m, prepared by removing oil and fat with an organic solvent or an alkaline solvent, was prepared in a roll shape. Rolled opaque conductive substrate 51
Are drawn out from the delivery chamber 100, and the insulating layer deposition chamber 1
01, conductive layer deposition chamber 102, laser irradiation chamber 103, n layer deposition chamber 104, i layer deposition chamber 105, p layer deposition chamber 106,
By passing through the transparent conductive layer deposition chamber 107 and the laser irradiation chamber 108 at a transportation speed of 500 mm / min, the photovoltaic element having the configuration shown in FIG. 5 was obtained. The following steps were performed in each of the above vacuum chambers. In the insulating layer deposition chamber 101, the deposition gas 111 composed of silane gas and ammonia gas diluted with nitrogen gas is decomposed in plasma excited by applying RF to the electrode 121, and the opaque conductive substrate 51 kept at 250 ° C. A silicon nitride film having a thickness of 2 μm was formed thereover as an insulating layer 52. Ar in the conductive layer deposition chamber 102
A silver film having a thickness of 5000 Å as the conductive layer 53 by a DC sputtering method using a silver target provided on the electrode 122 in an inert gas 112 consisting of
It was formed on the insulating layer 52 kept at ° C. The surface of the silver film had a fine uneven structure with remarkable diffuse reflection. In the laser irradiation chamber 103, wavelength 1.06 μm, pulse frequency 4 kHz
z, q switch pulse oscillation, Nd- in TBM00 mode
Using the YAG laser 123, the average laser output is 0.5
By irradiating a predetermined position of the conductive layer 53 with a beam having a spot diameter of 100 μm adjusted to W for 3 msec, the conductive layer defective portion 58 having a diameter of 0.8 mm where the insulating layer 52 is exposed,
Ten positions are formed at intervals of 10 mm in the width direction of the opaque conductive substrate 51. By repeating this every time the opaque conductive substrate 51 is conveyed by 10 mm, the conductive layer deficient portions 58 are formed as grid points of 10 rows and 10 mm intervals in the width direction. In the n-layer deposition chamber 104, SiH4 gas, SiF4 gas, and PH3 gas diluted with hydrogen gas are decomposed in plasma excited by applying RF to the electrode 124, and 250
An n-type amorphous silicon layer having a thickness of 200Å is formed on the conductive layer 53 kept at ℃, and subsequently, in the i-layer deposition chamber 105, SiH4 gas and SiF4 gas diluted with hydrogen gas and RF are applied to the electrode 125. It decomposes in the plasma excited by applying, and forms an i-type amorphous silicon layer with a thickness of 4000 Å on the n-type amorphous silicon layer,
Then, in the p-layer deposition chamber 106, S diluted with hydrogen gas is added.
The iH4 gas and the BF3 gas are decomposed in the plasma excited by applying RF to the electrode 126 to form a p-type microcrystalline silicon layer having a thickness of 100 Å on the i-type amorphous silicon layer. The bonding layer 54 was formed.
In the transparent conductive layer deposition chamber 107, an ITO film having a thickness of 700Å is formed as a semiconductor as a transparent conductive layer 55 by a DC sputtering method using an ITO target provided on the electrode 127 in a reactive gas 117 composed of Ar and oxygen. It was formed on the bonding layer 54. In the laser irradiation chamber 108, the conductive layer defect portion 58 formed on the conductive layer 53 by the laser is found by a method using the optical sensor 118, and this portion is transparently conductive by using the Nd-YAG laser 128 having the same performance as described above. Layer 5
A beam having a spot diameter of 100 μm and having an average laser output adjusted to 1 w was irradiated 1 msec perpendicularly to the surface from the 5 side. As a result, an alloy layer 56 having a diameter of 0.2 mm, in which the transparent conductive layer, the semiconductor bonding layer, and the insulating layer were mixed, and whose conductivity was about the same as that of a metal, was formed. Observing the cross section of the alloy layer 56,
A part of the amorphous silicon semiconductor bonding layer before laser irradiation and a part of silicon nitride formed a uniform silicon compound, but ITO formed a layer independent of these. The amount of heat given by the laser must be large enough to form the alloy layer 56 without the opaque conductive substrate 51 and the transparent conductive layer 55 coming into contact with the conductive layer 52.
【００１６】以上の工程を経て、巻き取り室１０９で再
びロール状に巻き取られた光起電力素子より、縦１０ｃ
ｍ横５ｃｍの長方形に切り出した、１０個の光起電力素
子から光起電力装置を製造する方法を、図１、図５に従
って順次説明する。各々の光起電力素子の端部におい
て、透明導電層５５、半導体接合層５４をエッチング
し、長さ１０ｍｍ幅４ｍｍの導電層露出部５０ａを２箇
所形成した。続いて電極接続体５７ａとして厚さ０．１
ｍｍ長さ５ｍｍ幅２ｍｍの銅箔を２個用意して、導電層
露出部５０ａ上の透明導電層５５に接触しない位置に、
金属粉を含有する導電性樹脂で接着した。次に、各々の
光起電力素子の電極接続体５７ａと不透明導電基体５１
とを、厚さ０．ｌｍｍ長さ１０ｍｍ幅５ｍｍの銅箔から
なる電極接続体５７ｂによって、順次直列接続すること
で光起電力装置を作成した。電極接続体５７ｂの不透明
導電基体５１および電極接続体５７ａへの接着は、前述
と同じ性能のＮｄ−ＹＡＧレーザを用いた溶着でなされ
た。ＡＭ１．５（１００ｍＷ／ｃｍ2）光照射下にて、
作成された光起電力装置の電流電圧特性を測定をしたと
ころ、最適動作点において４．３５Ｗ、１４．５Ｖ、光
電変換効率は８．７％が得られた。透明導電層５５、電
気的接触部５９、不透明導電基体５１、電極接続体５７
ａ、５７ｂからなる抵抗による損失電力を求めたとこ
ろ、真性光電変換効率で計算した出力電力の３％未満に
抑えることができた。ここでの真性光電変換効率とは、
それぞれの光起電力素子について、下層に導電層欠損部
５８を含まない透明導電層５５のある数箇所で、外周を
エッチングで取り除き周囲と絶縁した直径３ｍｍの円形
の透明導電層５５と、この円外で透明導電層５５、半導
体接合層５４をエッチングで取り除き露出させた導電層
５３とを電極とし、ＡＭ１．５光照射下にて測定された
最適動作点における光電変換効率の平均である。After the above steps, the photovoltaic element wound again in the winding chamber 109 in a roll shape has a length of 10c.
A method of manufacturing a photovoltaic device from 10 photovoltaic elements cut out into a rectangle of 5 cm in width 5 cm will be sequentially described with reference to FIGS. 1 and 5. At the end of each photovoltaic element, the transparent conductive layer 55 and the semiconductor bonding layer 54 were etched to form two conductive layer exposed portions 50a having a length of 10 mm and a width of 4 mm. Subsequently, the electrode connecting body 57a has a thickness of 0.1.
2 pieces of copper foil having a length of 5 mm and a width of 2 mm are prepared, and the copper foil is placed on the exposed portion 50a of the conductive layer at a position not contacting the transparent conductive layer 55
Bonding was performed with a conductive resin containing metal powder. Next, the electrode connection body 57a of each photovoltaic element and the opaque conductive substrate 51 are formed.
And thickness 0. A photovoltaic device was created by sequentially connecting in series with an electrode connector 57b made of a copper foil having a length of 1 mm, a length of 10 mm, and a width of 5 mm. The electrode connector 57b was adhered to the opaque conductive substrate 51 and the electrode connector 57a by welding using an Nd-YAG laser having the same performance as described above. Under AM1.5 (100 mW / cm 2 ) light irradiation,
When the current-voltage characteristics of the created photovoltaic device were measured, 4.35 W and 14.5 V were obtained at the optimum operating point, and the photoelectric conversion efficiency was 8.7%. Transparent conductive layer 55, electrical contact portion 59, opaque conductive substrate 51, electrode connector 57
When the loss power due to the resistance composed of a and 57b was obtained, it was possible to suppress it to less than 3% of the output power calculated by the intrinsic photoelectric conversion efficiency. The intrinsic photoelectric conversion efficiency here is
For each photovoltaic element, a circular transparent conductive layer 55 with a diameter of 3 mm, which is insulated from the surrounding by removing the outer periphery by etching at several places where the transparent conductive layer 55 does not include the conductive layer defect portion 58 in the lower layer, and this circle This is the average of the photoelectric conversion efficiencies at the optimum operating point measured under AM1.5 light irradiation, using the transparent conductive layer 55 and the conductive layer 53 exposed by removing the semiconductor bonding layer 54 by etching as electrodes.
【００１７】［従来例］つぎに、本願発明の上記実施例
と対比し本発明が優れた特性を有することを明らかにす
るため従来例について説明する。図１４は、従来の光起
電力装置の一つの構成を示した断面図であり、図１５
は、図１４で示される光起電力装置の断面図である。以
下図１４、図１５に従って光起電力装置の製造方法を順
次説明する。不透明導電基体９１として、５ｃｍ四方で
厚さ０．２ｍｍの鏡面研磨されたステンレスＳＵＳ４３
０の基体を用意し、アセトン中で超音波洗浄を５分間、
イソプロピルアルコール中で超音波洗浄を１分間行い、
油脂分を除去した。続いて４００℃に保った不透明導電
基体９１上に、アルミニウムターゲットを用いたＡｒ雰
囲気中でのＤＣスパッタリング法で、導電層９３として
厚さ５０００Åのアルミニウム膜を形成した。続いて水
素ガスで希釈されたＳｉＨ４ガス、ＳｉＦ４ガス、ＰＨ
３ガスを、ＲＦで励起されたプラズマ中で分解し、２５
０℃に保った導電層９３上に、厚さ２００Åのｎ型アモ
ルファスシリコン層を形成し、続いてこのｎ型アモルフ
ァスシリコン層上に、水素ガスで希釈されたＳｉＨ４ガ
ス、ＳｉＦ４ガスを、ＲＦで励起されたプラズマ中で分
解し、２５０℃に保ったｎ型アモルファスシリコン層上
に、厚さ４０００Åのｉ型アモルファスシリコン層を形
成し、続いてこのｉ型アモルファスシリコン層上に、水
素ガスで希釈されたＳｉＨ４ガス、ＢＦ３ガスを、ＲＦ
で励起されたプラズマ中で分解し、２５０℃に保ったｐ
型アモルファスシリコン層上に、厚さ１００Åのｐ型微
結晶シリコン層を形成することで、半導体接合層９４を
形成した。続いてこの半導体接合層９４上に、ＩＴＯタ
ーゲットを用いたＯ２雰囲気中ＤＣスパッタリング法
で、透明導電層９５として厚さ７００ÅのＩＴＯ膜を形
成した。続いてこの透明導電層９５上に、集電電極９８
として、長さ４５ｍｍの直径１００μｍの銀ワイヤー５
本を１０ｍｍ間隔で、導電性樹脂を用いて接着した。導
電性樹脂は、集電電極９８が配置される場所に対応し
て、幅０．４ｍｍ長さ４５ｍｍの１０ｍｍ間隔で５箇所
に、スクリーン印刷法で塗布される。続いて電極接続体
９７ａとして厚さ０．１ｍｍ長さ９５ｍｍ幅４ｍｍの銅
箔を、基体端部の不透明導電基体９１に接触しない位置
に、集電電極９８が金属粉を含有する導電性樹脂で接着
した。その接着領域に集電電極９８の端部を含めること
で、電極接続体９７ａと集電電極９８を接続した。この
光起電力素子を１０個作成し、各々の光起電力素子の電
極接続体９７ａと不透明導電基体９１とを、厚さ０．１
ｍｍ長さ１０ｍｍ幅５ｍｍの銅箔からなる電極接続体９
７ｂによって、順次直列接続することで光起電力装置を
作成した。電極接続体９７ｂの不透明導電基体９１およ
び電極接続体９７ａへの接着は、低融点合金半田を用い
た溶着でなされた。ＡＭ１．５（１００ｍＷ／ｃｍ2）
光照射下にて電流電圧特性を測定をしたところ、最適動
作点において４．１５Ｗ、１３．８Ｖ、光電変換効率は
８．３％が得られた。透明導電層９５、集電電極９８、
電極接続体９７からなる抵抗による損失電力を求めたと
ころ、真性光電変換効率で計算した出力電力の３％〜４
％であった。ここでの真性光電変換効率とは、それぞれ
の光起電力素子について、下層に導電層欠損部９８を含
まない透明導電層９５のある数箇所で、外周をエッチン
グで取り除き周囲と絶縁した直径３ｍｍの円形の透明導
電層９５と、この円の直下の不透明導電層９１を電極と
し、ＡＭ１．５光照射下にて測定された最適動作点にお
ける光電変換効率の平均である。このような従来例と本
発明とを比較した場合、本願発明によると従来例よりも
高い光電変換効率が得られ、また損失電力を低く抑える
ことができることが分かる。[Conventional Example] Next, a conventional example will be described in order to clarify that the present invention has excellent characteristics in comparison with the above-described embodiments of the present invention. FIG. 14 is a cross-sectional view showing one configuration of a conventional photovoltaic device, and FIG.
FIG. 15 is a sectional view of the photovoltaic device shown in FIG. 14. The manufacturing method of the photovoltaic device will be sequentially described below with reference to FIGS. As the opaque conductive substrate 91, mirror-polished stainless steel SUS43 having a 5 cm square and a thickness of 0.2 mm
0 base material, ultrasonic cleaning in acetone for 5 minutes,
Ultrasonic cleaning in isopropyl alcohol for 1 minute,
Oils and fats were removed. Then, on the opaque conductive substrate 91 kept at 400 ° C., an aluminum film having a thickness of 5000 Å was formed as the conductive layer 93 by a DC sputtering method in an Ar atmosphere using an aluminum target. Then, SiH4 gas diluted with hydrogen gas, SiF4 gas, PH
3 gas was decomposed in plasma excited by RF,
An n-type amorphous silicon layer having a thickness of 200Å is formed on the conductive layer 93 kept at 0 ° C., and then SiH4 gas and SiF4 gas diluted with hydrogen gas are RF-radiated on the n-type amorphous silicon layer. Decomposes in excited plasma and forms an i-type amorphous silicon layer with a thickness of 4000Å on the n-type amorphous silicon layer kept at 250 ° C., and subsequently dilutes it with hydrogen gas. RF the generated SiH4 gas and BF3 gas.
Decomposed in the plasma excited by the
A semiconductor junction layer 94 was formed by forming a p-type microcrystalline silicon layer having a thickness of 100Å on the type amorphous silicon layer. Subsequently, an ITO film having a thickness of 700 Å was formed as the transparent conductive layer 95 on the semiconductor bonding layer 94 by DC sputtering in an O 2 atmosphere using an ITO target. Then, a collector electrode 98 is formed on the transparent conductive layer 95.
As a silver wire 5 with a length of 45 mm and a diameter of 100 μm
The books were adhered at intervals of 10 mm using a conductive resin. The conductive resin is applied by a screen printing method at five places at intervals of 10 mm with a width of 0.4 mm and a length of 45 mm, corresponding to the place where the collecting electrode 98 is arranged. Subsequently, a copper foil having a thickness of 0.1 mm, a length of 95 mm, and a width of 4 mm is used as the electrode connecting body 97a at a position where the opaque conductive base 91 at the end of the base does not come into contact with the conductive resin containing the metal powder for the collecting electrode 98. Glued By including the end portion of the collector electrode 98 in the adhesion region, the electrode connector 97a and the collector electrode 98 were connected. Ten photovoltaic elements were prepared, and the electrode connection body 97a of each photovoltaic element and the opaque conductive substrate 91 were made to have a thickness of 0.1.
mm electrode connection body 9 made of copper foil having a length of 10 mm and a width of 5 mm
7b, the photovoltaic device was created by sequentially connecting in series. The electrode connecting body 97b was adhered to the opaque conductive substrate 91 and the electrode connecting body 97a by welding using a low melting point alloy solder. AM1.5 (100 mW / cm 2 )
When the current-voltage characteristics were measured under light irradiation, 4.15 W and 13.8 V were obtained at the optimum operating point, and the photoelectric conversion efficiency was 8.3%. Transparent conductive layer 95, collector electrode 98,
When the loss power due to the resistance composed of the electrode connection body 97 was determined, it was 3% to 4% of the output power calculated by the intrinsic photoelectric conversion efficiency.
%Met. Intrinsic photoelectric conversion efficiency here means that for each photovoltaic element, the transparent conductive layer 95 that does not include the conductive layer defect portion 98 in the lower layer has a diameter of 3 mm which is removed by etching the outer periphery and is insulated from the surroundings. This is the average of the photoelectric conversion efficiencies at the optimum operating point measured under AM1.5 light irradiation, using the circular transparent conductive layer 95 and the opaque conductive layer 91 immediately below this circle as electrodes. Comparing such a conventional example with the present invention, it can be seen that according to the present invention, higher photoelectric conversion efficiency than that of the conventional example can be obtained and the power loss can be suppressed low.
【００１８】[0018]
【発明の効果】以上のように、本発明は光入射側の電極
である透明導電層と光入射側裏面の不透明導電基体と
が、導電層欠損部において電気的に接触するように構成
することによつて、不透明導電基体に占める光電変換領
域を減少させずに光入射側電極の低抵抗化が図れ、従来
の光電変換素子に比べ高い光電変換効率を有する光電変
換装置を実現することができる。また電気的接触は、絶
縁層、導電層、半導体接合層、透明導電層からなる全層
形成後に、圧迫もしくはレーザ照射等の簡単な工程によ
り行うことができるから、製造設備費用の低減と歩留ま
りを改善し、製造コストを低減することができる。As described above, according to the present invention, the transparent conductive layer which is the electrode on the light incident side and the opaque conductive substrate on the rear surface on the light incident side are electrically contacted at the defective portion of the conductive layer. Thus, the resistance of the light incident side electrode can be reduced without reducing the photoelectric conversion region occupied in the opaque conductive substrate, and a photoelectric conversion device having higher photoelectric conversion efficiency than the conventional photoelectric conversion element can be realized. . In addition, electrical contact can be made by a simple process such as pressing or laser irradiation after forming all layers consisting of an insulating layer, a conductive layer, a semiconductor bonding layer, and a transparent conductive layer, thus reducing manufacturing equipment cost and yield. It is possible to improve and reduce the manufacturing cost.
【図１】本発明実施例１および実施例５の光起電力装置
の概略を示した断面図。FIG. 1 is a cross-sectional view schematically showing a photovoltaic device according to first and fifth embodiments of the present invention.
【図２】本発明実施例２の光起電力装置の概略を示した
断面図。FIG. 2 is a sectional view showing the outline of a photovoltaic device according to Example 2 of the present invention.
【図３】本発明実施例３の光起電力装置の概略を示した
断面図。FIG. 3 is a sectional view showing an outline of a photovoltaic device according to Example 3 of the present invention.
【図４】本発明実施例４の光起電力装置の概略を示した
断面図。FIG. 4 is a sectional view showing the outline of a photovoltaic device according to Example 4 of the present invention.
【図５】本発明実施例１および実施例５の光起電力装置
の概略を示した平面図。FIG. 5 is a plan view showing the outline of the photovoltaic devices of Examples 1 and 5 of the present invention.
【図６】本発明実施例２の光起電力装置の概略を示した
平面図。FIG. 6 is a plan view showing the outline of a photovoltaic device according to Example 2 of the present invention.
【図７】本発明実施例３の光起電力装置の概略を示した
平面図。FIG. 7 is a plan view showing the outline of a photovoltaic device according to Example 3 of the present invention.
【図８】本発明実施例４の光起電力装置の概略を示した
平面図。FIG. 8 is a plan view showing the outline of a photovoltaic device according to Example 4 of the present invention.
【図９】本発明実施例１の光起電力装置を構成する光起
電力素子の概略を示した断面図。FIG. 9 is a cross-sectional view schematically showing a photovoltaic element that constitutes the photovoltaic device of Example 1 of the present invention.
【図１０】本発明実施例２の光起電力装置を構成する光
起電力素子の概略を示した断面図。FIG. 10 is a cross-sectional view schematically showing a photovoltaic element that constitutes the photovoltaic device of Example 2 of the present invention.
【図１１】本発明実施例３、実施例４および実施例５の
光起電力装置を構成する光起電力素子の概略を示した断
面図。FIG. 11 is a cross-sectional view schematically showing a photovoltaic element that constitutes the photovoltaic devices of Examples 3, 4 and 5 of the present invention.
【図１２】本発明実施例１の光起電力装置を構成する光
起電力素子の製造工程を示した説明図。FIG. 12 is an explanatory view showing the manufacturing process of the photovoltaic element that constitutes the photovoltaic device of Example 1 of the present invention.
【図１３】本発明実施例３、実施例４および実施例５の
光起電力装置を構成する光起電力素子の製造工程を示し
た説明図。FIG. 13 is an explanatory view showing the manufacturing process of the photovoltaic elements that constitute the photovoltaic devices of Examples 3, 4 and 5 of the present invention.
【図１４】従来の光起電力装置の概略構成を示した平面
図。FIG. 14 is a plan view showing a schematic configuration of a conventional photovoltaic device.
【図１５】従来の光起電力装置の概略構成を示した断面
図。FIG. 15 is a cross-sectional view showing a schematic configuration of a conventional photovoltaic device.
【図１６】本発明、実施例５の光起電力装置を構成する
光起電力素子の製造装置を示した説明図。FIG. 16 is an explanatory diagram showing a manufacturing device of a photovoltaic element that constitutes the photovoltaic device of the fifth embodiment of the present invention.
１、３、４ レーザビーム ２ 圧迫の方向 １０ａ、２０ａ、５０ａ 導電層露出部 ２０ｂ 基体露出部 ３０ａ、４０ａ 導電層接続部 ３０ｂ、４０ｂ 透明導電層分割溝 ３０ｃ、４０ｃ 導電層接続層 １１、２１、３１、４１、５１、９１ 不透明導電基
体 １２、２２、３２、４２、５２ 絶縁体 １３、２３、３３、４３、５３、９３ 導電層 １４、２４、３４、４４、５４、９４ 半導体接合層 １５、２５、３５、４５、５５、９５ 透明導電層 ３６、４６、５６ 合金層 １７ａ、２７ａ、３７ａ、４７ａ、５７ａ、９７ａ
電極接続体 １７ｂ、２７ｂ、３７ｂ、４７ｂ、５７ｂ、９７ｂ
電極接続体 １８、２８、３８、４８、５８ 導電層欠損部 １９、２９、３９、４９、５９ 電気的接触部 ９８ 集電電極 １００ 送り出し室 １０１ 絶縁体堆積室 １０２ 導電層堆積室 １０３ レーザ照射室 １０４ ｎ層堆積室 １０５ ｉ層堆積室 １０６ ｐ層堆積室 １０７ 透明層堆積室 １０８ レーザ照射室 １０９ 巻き取り室 １１０ 送り出しロール １１１ 堆積ガス １１２ 不活性ガス １１４ 堆積ガス １１５ 堆積ガス １１６ 堆積ガス １１７ 反応性ガス １１８ センサ １１９ 巻き取り室 １２０ ロール基板 １２１ 電極 １２２ 電極 １２３ レーザ １２４ 電極 １２５ 電極 １２６ 電極 １２７ 電極 １２８ レーザ1, 3 and 4 Laser beam 2 Direction of compression 10a, 20a, 50a Conductive layer exposed portion 20b Substrate exposed portion 30a, 40a Conductive layer connecting portion 30b, 40b Transparent conductive layer dividing groove 30c, 40c Conductive layer connecting layer 11, 21, 31, 41, 51, 91 Opaque conductive substrate 12, 22, 32, 42, 52 Insulator 13, 23, 33, 43, 53, 93 Conductive layer 14, 24, 34, 44, 54, 94 Semiconductor bonding layer 15, 25, 35, 45, 55, 95 Transparent conductive layer 36, 46, 56 Alloy layer 17a, 27a, 37a, 47a, 57a, 97a
Electrode connection body 17b, 27b, 37b, 47b, 57b, 97b
Electrode connection body 18, 28, 38, 48, 58 Conductive layer defective portion 19, 29, 39, 49, 59 Electrical contact portion 98 Current collecting electrode 100 Sending chamber 101 Insulator deposition chamber 102 Conductive layer deposition chamber 103 Laser irradiation chamber 104 n-layer deposition chamber 105 i-layer deposition chamber 106 p-layer deposition chamber 107 Transparent layer deposition chamber 108 Laser irradiation chamber 109 Winding chamber 110 Delivery roll 111 Deposition gas 112 Inert gas 114 Deposition gas 115 Deposition gas 116 Deposition gas 117 Reactivity Gas 118 Sensor 119 Winding chamber 120 Roll substrate 121 Electrode 122 Electrode 123 Laser 124 Electrode 125 Electrode 126 Electrode 127 Electrode 128 Laser
Claims (24)
層、半導体接合層、透明導電層の順に積層して形成され
た複数の光起電力素子を、金属からなる電極接続体を介
して直列接続した光起電力装置であって、前記導電層が
絶縁体層を被覆しない導電層欠損部を複数個備え、該導
電層欠損部において前記不透明導電基体と前記透明導電
層とが電気的に接触し、該導電層欠損部を備えない領域
においてそれらが電気的に非接触とされていることを特
徴とする光起電力装置。1. A plurality of photovoltaic elements formed by laminating an insulating layer, a conductive layer, a semiconductor bonding layer, and a transparent conductive layer on an opaque conductive substrate in this order through an electrode connection body made of metal. A photovoltaic device connected in series, wherein the conductive layer has a plurality of conductive layer defects that do not cover the insulating layer, and the opaque conductive substrate and the transparent conductive layer are electrically connected to each other at the conductive layer defects. A photovoltaic device, which is in contact with each other and is electrically non-contacted in a region not provided with the conductive layer defect portion.
互の位置関係は規則性を持っていることを特徴とする請
求項１記載の光起電力装置。2. The photovoltaic device according to claim 1, wherein the conductive layer deficient portions are circular and the mutual positional relationship has regularity.
その相互の位置関係は平行であることを特徴とする請求
項１記載の光起電力装置。3. The photovoltaic device according to claim 1, wherein the conductive layer deficient portion is a straight groove and the mutual positional relationship is parallel to each other.
の電気的接触は、前記導電層欠損部において前記不透明
導電基体の前記透明導電層へ向う凹みと、前記透明導電
層の前記不透明導電基体へ向う凹みの、一方もしくは双
方により行うようにしたことを特徴とする請求項１記載
の光起電力装置。4. The electrical contact between the opaque conductive substrate and the transparent conductive layer is such that a recess of the opaque conductive substrate toward the transparent conductive layer at the conductive layer defect portion and the opaque conductive substrate of the transparent conductive layer. 2. The photovoltaic device according to claim 1, wherein one or both of the recesses facing toward each other is used.
の電気的接触は、前記導電層欠損部において複数層から
なる合金層を形成して行うようにしたことを特徴とする
請求項１記載の光起電力装置。5. The electrical contact between the opaque conductive substrate and the transparent conductive layer is made by forming an alloy layer composed of a plurality of layers at the conductive layer defect portion. Photovoltaic device.
の導電層と、他方の光起電力素子の不透明導電基体もし
くは透明導電層とに、接触していることを特徴とする請
求項１記載の光起電力装置。6. The electrode connecting body is in contact with a conductive layer of one photovoltaic element and an opaque conductive substrate or a transparent conductive layer of the other photovoltaic element. 1. The photovoltaic device according to 1.
の透明導電層の領域を構成する、該透明導電層がその下
層に前記導電層欠損部を備えた領域から分割され下層に
前記導電層欠損部を備えない領域で該透明導電層が導電
層とは電気的に接触しているが不透明基体とは電気的に
非接触の領域と、他方の光起電力素子の不透明導電基体
もしくは透明導電層とに、接触していることを特徴とす
る請求項１記載の光起電力装置。7. The electrode connecting body constitutes a region of a transparent conductive layer of one photovoltaic element, and the transparent conductive layer is divided from a region having the conductive layer defect portion below the transparent conductive layer, and the transparent layer is divided into the lower layer. A region in which the transparent conductive layer is in electrical contact with the conductive layer but is not in electrical contact with the opaque substrate in a region having no conductive layer defect portion, and an opaque conductive substrate of the other photovoltaic element or The photovoltaic device according to claim 1, wherein the photovoltaic device is in contact with the transparent conductive layer.
層、半導体接合層、透明導電層がこの順で形成された複
数の光起電力素子を、金属からなる電極接続体を介して
直列接続した光起電力装置の製造方法であって、不透明
導電基体の上に絶縁層を形成する工程と、前記絶縁層の
上に絶縁層を被覆しない導電層欠損部を複数個有する導
電層を形成する工程と、前記導電層の上に半導体接合層
を形成する工程と、前記半導体接合層の上に透明導電層
を形成する工程と、前記導電層欠損部において前記不透
明導電基体と前記透明導電層とを電気的に接触させる工
程とを有していることを特徴とする光起電力装置の製造
方法。8. A plurality of photovoltaic elements, in which an insulating layer, a conductive layer, a semiconductor bonding layer, and a transparent conductive layer are formed in this order on an opaque conductive substrate, are connected in series via an electrode connector made of metal. A method of manufacturing a connected photovoltaic device, comprising: forming an insulating layer on an opaque conductive substrate; and forming a conductive layer having a plurality of conductive layer defects not covering the insulating layer on the insulating layer. A step of forming a semiconductor junction layer on the conductive layer, a step of forming a transparent conductive layer on the semiconductor junction layer, the opaque conductive substrate and the transparent conductive layer at the conductive layer defect portion. And a step of electrically contacting with each other.
て形成されることを特徴とする請求項８記載の光起電力
装置の製造方法。9. The method of manufacturing a photovoltaic device according to claim 8, wherein the conductive layer defect portion is formed by laser irradiation.
とを電気的に接触させる工程は、前記透明導電層を形成
する工程の後に行われることを特徴とする請求項８記載
の光起電力装置の製造方法。10. The photovoltaic device according to claim 8, wherein the step of electrically contacting the opaque conductive substrate and the transparent conductive layer is performed after the step of forming the transparent conductive layer. Manufacturing method.
との電気的接触は、前記導電層欠損部において前記不透
明導電基体を前記透明導電層へ向かって凹ませる工程
と、前記透明導電層を前記不透明導電基体へ向かって凹
ませる工程の、一方もしくは双方の工程によって行われ
ることを特徴とする請求項１０記載の光起電力装置の製
造方法。11. The electrical contact between the opaque conductive substrate and the transparent conductive layer is such that the opaque conductive substrate is recessed toward the transparent conductive layer at the conductive layer defect portion, and the transparent conductive layer is contacted with the transparent conductive layer. 11. The method of manufacturing a photovoltaic device according to claim 10, wherein one or both of the step of recessing toward the opaque conductive substrate is performed.
の一方もしくは双方を凹ませる工程は、鋭突なもので圧
力を加える工程であることを特徴とする請求項１１記載
の光起電力装置の製造方法。12. The photovoltaic device according to claim 11, wherein the step of recessing one or both of the opaque conductive substrate and the transparent conductive layer is a step of applying pressure with a sharp object. Production method.
導電基体と前記透明導電層との電気的接触は、前記導電
層欠損部において前記絶縁体層と前記半導体接合層を合
金層に変化させる工程によって行われることを特徴とす
る請求項１０記載の光起電力装置の製造方法。13. The electrical contact between the opaque conductive substrate and the transparent conductive layer at the conductive layer deficient portion is made by a step of changing the insulator layer and the semiconductor bonding layer into an alloy layer at the conductive layer deficient portion. The method for manufacturing a photovoltaic device according to claim 10, wherein the method is performed.
金層に変化させる工程は、レーザ照射を含む工程である
ことを特徴とする請求項１３記載の光起電力装置の製造
方法。14. The method for manufacturing a photovoltaic device according to claim 13, wherein the step of changing the insulator layer and the semiconductor junction layer into an alloy layer is a step including laser irradiation.
続体を一方の光起電力素子の導電層と他方の光起電力素
子の不透明導電基体もしくは透明導電層とに接触させる
工程によって行われることを特徴とする請求項８記載の
光起電力装置の製造方法。15. The series connection is performed by a step of bringing an electrode connection body made of metal into contact with a conductive layer of one photovoltaic element and an opaque conductive substrate or a transparent conductive layer of the other photovoltaic element. 9. The method of manufacturing a photovoltaic device according to claim 8.
子の導電層に接触させる工程、および他方の光起電力素
子の不透明導電基体もしくは透明導電層に接触させる工
程の、双方または一方は、レーザ照射を用いた溶着を含
む工程によって行われることを特徴とする請求項１５記
載の光起電力装置の製造方法。16. The step of contacting the electrode connecting body with a conductive layer of one photovoltaic element and the step of contacting with an opaque conductive substrate or a transparent conductive layer of the other photovoltaic element, both or one of 16. The method of manufacturing a photovoltaic device according to claim 15, wherein the method is performed by a step including welding using laser irradiation.
子の導電層に接触させる工程、および他方の光起電力素
子の不透明導電基体もしくは透明導電層に接触させる工
程の、双方または一方は、樹脂を主成分とする物質を介
在させる工程によって行われることを特徴とする請求項
１５記載の光起電力装置の製造方法。17. The step of contacting the electrode connecting body with a conductive layer of one photovoltaic element and the step of contacting with an opaque conductive substrate or a transparent conductive layer of the other photovoltaic element, both or one of 16. The method for manufacturing a photovoltaic device according to claim 15, wherein the method is performed by a step of interposing a substance containing a resin as a main component.
子の導電層に接触させる工程、および他方の光起電力素
子の不透明導電基体もしくは透明導電層に接触させる工
程の、双方または一方は、低融点合金の半田を用いた溶
着を含む工程によって行われることを特徴とする請求項
１５記載の光起電力装置の製造方法。18. The step of contacting the electrode connecting body with a conductive layer of one photovoltaic element, and the step of contacting with an opaque conductive substrate or a transparent conductive layer of the other photovoltaic element, both or one of 16. The method for manufacturing a photovoltaic device according to claim 15, wherein the method is performed by a step including welding using a low melting point alloy solder.
続体を、一方の光起電力素子の透明導電層の領域を構成
する、該透明導電層がその下層に前記導電層欠損部を備
えた領域から分割され下層に前記導電層欠損部を備えな
い領域で該透明導電層が導電層とは電気的に接触してい
るが不透明基体とは電気的に非接触の領域と、他方の光
起電力素子の不透明導電基体もしくは透明導電層とに、
接触させる工程によって行われるとを特徴とする請求項
８記載の光起電力装置の製造方法。19. The serial connection comprises an electrode connection body made of metal, which constitutes a region of a transparent conductive layer of one photovoltaic element, and the transparent conductive layer has the conductive layer defect portion below the transparent conductive layer. In a region which is divided from the region and which does not have the conductive layer defect portion in the lower layer, the transparent conductive layer is in electrical contact with the conductive layer but is not in electrical contact with the opaque substrate, and the other photo-sensitive region. For opaque conductive substrate or transparent conductive layer of power element,
The method for manufacturing a photovoltaic device according to claim 8, wherein the method is performed by a step of contacting.
電層欠損部を備えた領域と下層に前記導電層欠損部を備
えない領域との分割は、レーザ照射を含む工程により行
われることを特徴とする請求項１９記載の光起電力装置
の製造方法。20. The division of the transparent conductive layer into a region having the conductive layer defect portion below it and a region not having the conductive layer defect portion below it are performed by a step including laser irradiation. 20. The method of manufacturing a photovoltaic device according to claim 19, wherein the photovoltaic device is manufactured.
接触し不透明導電基体と電気的に非接触の領域は、レー
ザ照射を含む工程により形成されることを特徴とする請
求項１９記載の光起電力装置の製造方法。21. The region of the transparent conductive layer that is in electrical contact with the conductive layer and is not in electrical contact with the opaque conductive substrate is formed by a process including laser irradiation. Method for manufacturing photovoltaic device of.
子の透明導電層の下層に前記導電層欠損部を備えない領
域に接触させる工程、および他方の光起電力素子の不透
明導電基体もしくは透明導電層に接触させる工程の、双
方または一方は、レーザを用いた溶着を含む工程である
ことを特徴とする請求項１９記載の光起電力装置の製造
方法。22. A step of bringing the electrode connection body into contact with a region below the transparent conductive layer of one photovoltaic element without the conductive layer defect portion, and an opaque conductive substrate of the other photovoltaic element or 20. The method for manufacturing a photovoltaic device according to claim 19, wherein both or one of the steps of bringing into contact with the transparent conductive layer is a step including welding using a laser.
子の透明導電層の下層に前記導電層欠損部を備えない領
域に接触させる工程、および他方の光起電力素子の不透
明導電基体もしくは透明導電層に接触させる工程の、双
方または一方は、樹脂を主成分とする物質を介在させる
工程であることを特徴とする請求項１９記載の光起電力
装置の製造方法。23. A step of bringing the electrode connection body into contact with a region below the transparent conductive layer of one photovoltaic element without the conductive layer defect portion, and an opaque conductive substrate of the other photovoltaic element or 20. The method for manufacturing a photovoltaic device according to claim 19, wherein at least one of the step of bringing the transparent conductive layer into contact with the transparent conductive layer is a step of interposing a substance containing a resin as a main component.
子の透明導電層の下層に前記導電層欠損部を備えない領
域に接触させる工程、および他方の光起電力素子の不透
明導電基体もしくは透明導電層に接触させる工程の、双
方または一方は、低融点合金の半田を用いた溶着を含む
工程であることを特徴とする請求項１９記載の光起電力
装置の製造方法。24. A step of bringing the electrode connection body into contact with a region below the transparent conductive layer of one of the photovoltaic elements without the conductive layer defect portion, and an opaque conductive substrate of the other photovoltaic element or 20. The method of manufacturing a photovoltaic device according to claim 19, wherein at least one of the steps of contacting with the transparent conductive layer is a step including welding using a solder of a low melting point alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7258144A JPH0982994A (en) | 1995-09-11 | 1995-09-11 | Photovoltaic device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7258144A JPH0982994A (en) | 1995-09-11 | 1995-09-11 | Photovoltaic device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0982994A true JPH0982994A (en) | 1997-03-28 |
Family
ID=17316139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7258144A Pending JPH0982994A (en) | 1995-09-11 | 1995-09-11 | Photovoltaic device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0982994A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002530894A (en) * | 1998-11-23 | 2002-09-17 | スティックティング・エネルギーオンデルズーク・セントルム・ネーデルランド | Method for producing metallization patterns on photovoltaic cells |
| JP2004200512A (en) * | 2002-12-19 | 2004-07-15 | Kyocera Corp | Photoelectric conversion device |
| JP2008519438A (en) * | 2004-10-29 | 2008-06-05 | ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド | Back contact solar cell |
| JP2011526423A (en) * | 2008-06-27 | 2011-10-06 | ソロパワー、インコーポレイテッド | Method and apparatus for achieving low resistance contact to metal-based thin film solar cells |
-
1995
- 1995-09-11 JP JP7258144A patent/JPH0982994A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002530894A (en) * | 1998-11-23 | 2002-09-17 | スティックティング・エネルギーオンデルズーク・セントルム・ネーデルランド | Method for producing metallization patterns on photovoltaic cells |
| JP2004200512A (en) * | 2002-12-19 | 2004-07-15 | Kyocera Corp | Photoelectric conversion device |
| JP2008519438A (en) * | 2004-10-29 | 2008-06-05 | ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド | Back contact solar cell |
| JP2011526423A (en) * | 2008-06-27 | 2011-10-06 | ソロパワー、インコーポレイテッド | Method and apparatus for achieving low resistance contact to metal-based thin film solar cells |
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