JPH0929623A - Lapping surface plate of high function - Google Patents
Lapping surface plate of high functionInfo
- Publication number
- JPH0929623A JPH0929623A JP20180395A JP20180395A JPH0929623A JP H0929623 A JPH0929623 A JP H0929623A JP 20180395 A JP20180395 A JP 20180395A JP 20180395 A JP20180395 A JP 20180395A JP H0929623 A JPH0929623 A JP H0929623A
- Authority
- JP
- Japan
- Prior art keywords
- lapping
- surface plate
- abrasive grains
- polishing
- carbon steel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims abstract description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 18
- 239000010439 graphite Substances 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 16
- 229910000975 Carbon steel Inorganic materials 0.000 claims abstract description 14
- 239000010962 carbon steel Substances 0.000 claims abstract description 14
- 239000000126 substance Substances 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 4
- 229910000851 Alloy steel Inorganic materials 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims abstract description 3
- 239000006061 abrasive grain Substances 0.000 claims description 51
- 229910000831 Steel Inorganic materials 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 6
- 239000010959 steel Substances 0.000 claims description 6
- 229910001562 pearlite Inorganic materials 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910000859 α-Fe Inorganic materials 0.000 claims description 3
- 229910001567 cementite Inorganic materials 0.000 claims description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 2
- KSOKAHYVTMZFBJ-UHFFFAOYSA-N iron;methane Chemical compound C.[Fe].[Fe].[Fe] KSOKAHYVTMZFBJ-UHFFFAOYSA-N 0.000 claims description 2
- 230000002265 prevention Effects 0.000 claims description 2
- 230000005496 eutectics Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 15
- 239000002245 particle Substances 0.000 abstract description 10
- 239000002184 metal Substances 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 230000015271 coagulation Effects 0.000 abstract 1
- 238000005345 coagulation Methods 0.000 abstract 1
- 229910001141 Ductile iron Inorganic materials 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 10
- 229910001018 Cast iron Inorganic materials 0.000 description 7
- 230000002776 aggregation Effects 0.000 description 5
- 238000007373 indentation Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005096 rolling process Methods 0.000 description 4
- 238000005054 agglomeration Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000001050 lubricating effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000004220 aggregation Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008961 swelling Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 description 1
- 238000009412 basement excavation Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007542 hardness measurement Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000002436 steel type Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、シリコンウェハー
等のラッピング研磨に使用される定盤に関し、特にその
金属製定盤の硬度・組織を改善し、研磨速度および製品
品質を向上する砥粒安定性に優れた高機能ラッピング定
盤に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface plate used for lapping and polishing silicon wafers and the like, and in particular, the stability of abrasive grains for improving the hardness and structure of the metal surface plate and improving the polishing rate and product quality. High-performance lapping surface plate with excellent performance.
【０００２】[0002]
【従来の技術】半導体用シリコン等の硬脆材料のラッピ
ングにおいては、製品の表面品質および研磨能率の面か
ら、その条件を最適化することが重要となる。一般的な
ラッピングにおいては、砥粒の粒度を変えて寸法、形状
および表面性状を調整することが行われている。このた
め、砥粒に対する検討はこれまで十分になされて来た。
しかし、ラッピング定盤（以下定盤と称する）の影響に
ついては、ほとんど解明されていなかった。これは、砥
粒が比較的柔らかい基地に対して、ある程度砥粒が埋め
込まれるようにして、ラッピング面での切刃効果を最適
化することが可能となり、ラッピングの効率が改善され
るためである。2. Description of the Related Art In lapping hard and brittle materials such as silicon for semiconductors, it is important to optimize the conditions in terms of surface quality and polishing efficiency of products. In general lapping, the size, shape and surface texture are adjusted by changing the grain size of the abrasive grains. For this reason, studies on abrasive grains have been sufficiently conducted so far.
However, the influence of the lapping platen (hereinafter referred to as a platen) has hardly been clarified. This is because it is possible to optimize the cutting edge effect on the lapping surface and to improve the lapping efficiency by allowing the abrasive grains to be embedded to some extent in the base where the abrasive grains are relatively soft. .
【０００３】一方、シリコンウェハーのラッピングにお
いては、定盤上にて転動する砥粒の押込み力によって、
シリコンウェハーにクラックを発生させ破壊・除去する
過程で行われる。この時、製品シリコンウェハーに疵を
発生させることなく、安定した板厚精度が得られるよう
に、平行度を最適な研磨速度にて達成することを狙って
いる。On the other hand, when lapping a silicon wafer, the pressing force of the abrasive grains rolling on the surface plate causes
It is performed in the process of cracking, destroying and removing a silicon wafer. At this time, the aim is to achieve parallelism at an optimum polishing rate so that stable plate thickness accuracy can be obtained without causing defects in the product silicon wafer.
【０００４】従って、定盤の作用としては、第一に、砥
粒を保持すること、第二に、正確な幾何学的形状を保持
してその形状をシリコンウェハー（工作物）に転写され
るようにする。これまで、以上の二つの条件を満足する
ものとして、鋳鉄製（特に球状黒鉛鋳鉄製）定盤が適し
ているとされて来た。これは球状黒鉛が砥粒の転動サイ
トとして働き、砥粒を保持する機能を有し、また黒鉛が
潤滑作用を有しているため定盤として優れているためで
ある。この分野の公知技術として、例えばポリッシング
定盤に関して特開平６−８１３８４７号公報には、低膨
張特性を持ち強度の高い鋳鉄定盤が開示されている。Therefore, as the function of the surface plate, first, the abrasive grains are held, and secondly, the accurate geometric shape is held and the shape is transferred to the silicon wafer (workpiece). To do so. Up to now, it has been considered that a cast iron (particularly spheroidal graphite cast iron) surface plate is suitable for satisfying the above two conditions. This is because spheroidal graphite functions as a rolling site for abrasive grains and has a function of holding the abrasive grains, and because graphite has a lubricating action, it is excellent as a surface plate. As a known technique in this field, for example, regarding a polishing platen, Japanese Patent Laid-Open No. 6-813847 discloses a cast iron platen having a low expansion characteristic and high strength.
【０００５】しかし、最近では前述の鋳鉄製より、さら
に砥粒安定性を向上したラッピング用定盤の開発ニーズ
が増大し、その砥粒の押し込み力を前提としたラッピン
グ面での研磨時の複雑な条件をより最適化することが望
まれている。However, recently, the need for development of a lapping platen having further improved abrasive grain stability than that of the cast iron product mentioned above has increased, and the lapping surface is complicated when the lapping surface is premised on the pushing force of the abrasive grains. It is desired to further optimize such conditions.
【０００６】[0006]
【発明が解決しようとする課題】本発明の目的は、シリ
コンウェハーのラッピング研磨におけるひっかき疵（ス
クラッチ疵）の発生を防止し、研磨速度の向上すなわち
生産性の改善を図るラッピング定盤を提供することであ
る。SUMMARY OF THE INVENTION An object of the present invention is to provide a lapping platen which prevents the occurrence of scratches (scratch flaws) in lapping and polishing a silicon wafer and improves the polishing rate, that is, the productivity. That is.
【０００７】また、本発明の他の目的は、定盤と砥粒の
研磨中の挙動を検討し、砥粒の安定性を向上したラッピ
ング定盤を提供することにある。さらに、本発明の別の
目的は、定盤の材質として、前記従来の鋳鉄製および各
種鋼種において、研磨条件を一定とした場合での評価方
法を検討し、研磨条件の最適化が可能となるラッピング
定盤を提供することである。Another object of the present invention is to provide a lapping platen in which the behavior of the platen and the abrasive grains during polishing is examined to improve the stability of the abrasive grains. Furthermore, another object of the present invention is to examine the evaluation method when the polishing conditions are constant in the conventional cast iron and various steel types as the material of the surface plate, and it becomes possible to optimize the polishing conditions. It is to provide a wrapping surface plate.
【０００８】[0008]
【課題を解決するための手段】上記の目的を達成する本
発明の要旨は次の通りである。 （１）砥粒を供給して材料を研磨するラッピング定盤に
おいて、化学成分として、Ｃ：1.5 重量％以下の炭素鋼
からなり、前記炭素鋼は少なくとも黒鉛等の晶出物を第
二相とする複合組織を含まない単相からなる均一組織を
有し、かつビッカース硬度Ｈv 値：200 以上であること
を特徴とするラッピング定盤。The gist of the present invention for achieving the above object is as follows. (1) In a lapping platen for supplying abrasive grains to polish a material, the chemical component is C: 1.5 wt% or less of carbon steel, and the carbon steel contains at least a crystallized substance such as graphite as a second phase. A lapping plate having a uniform structure consisting of a single phase that does not include a complex structure and having a Vickers hardness Hv value of 200 or more.
【０００９】（２）砥粒を供給して材料を研磨するラッ
ピング定盤において、化学成分として、Ｃ：1.5 重量％
以下の炭素鋼からなり、前記炭素鋼は少なくとも黒鉛等
の晶出物を第二相とする複合組織を含まない単相からな
る均一組織を有し、かつビッカース硬度Ｈv 値：200 以
上であって、研磨中に砥粒による凝集粒の形成を抑制す
ることを特徴とする砥粒安定性に優れた高機能ラッピン
グ定盤。(2) In a lapping platen for supplying abrasive grains to polish a material, C: 1.5% by weight as a chemical component
The carbon steel is composed of the following carbon steel, which has a uniform structure of a single phase containing at least a crystallized substance such as graphite as a second phase and not containing a composite structure, and has a Vickers hardness Hv value of 200 or more. A high-performance lapping plate having excellent abrasive grain stability, which is characterized by suppressing the formation of aggregated particles due to the abrasive grains during polishing.
【００１０】（３）前記炭素鋼が、Ｃ：0.95〜0.60重量
％の共析鋼成分からなり、かつ初析炭化物を含まないフ
ェライトおよびセメンタイトのパーライト単相からなる
均一組織であることを特徴とする（１）または（２）記
載のラッピング定盤。(3) The carbon steel has a uniform structure composed of C: 0.95 to 0.60% by weight of eutectoid steel component and pearlite single phase of ferrite and cementite containing no proeutectoid carbide. The lapping plate according to (1) or (2).
【００１１】（４）前記炭素鋼が、さらにCrを１〜20重
量％含有する合金鋼であることを特徴とする（１）から
（３）のいずれかに記載の防錆性に優れたラッピング定
盤。(4) The lapping according to any one of (1) to (3), characterized in that the carbon steel is an alloy steel further containing 1 to 20% by weight of Cr. Surface plate.
【００１２】（５）前記ラッピング定盤が、シリコン等
の硬脆材料からなる半導体基盤のラッピング用に使用す
ることを特徴とする（１）から（４）のいずれかに記載
のラッピング定盤である。(5) The lapping plate according to any one of (1) to (4), characterized in that the lapping plate is used for lapping a semiconductor substrate made of a hard and brittle material such as silicon. is there.
【００１３】[0013]
【発明の実施の形態】本発明は、本発明者の多数の実験
によって得られた知見に基づいて達成されたものであ
る。すなわち、本発明者は従来の鋳鉄定盤では、ラッピ
ング中に砥粒の凝集粒が、砥粒廃液中に存在することを
突き止めた。この凝集の起こり易い条件として、定盤の
硬度および定盤面の砥粒による変形度合いが大きい要因
であるとの知見を得た。また、前記鋳鉄定盤では黒鉛粒
が従来いわれている程には、潤滑補助として、遊離砥粒
の固定サイトとして作用をするには不十分であって、さ
らに砥粒の転動作用を促進することが必要であるとの知
見に基づき本発明を達成した。BEST MODE FOR CARRYING OUT THE INVENTION The present invention has been accomplished based on the findings obtained by many experiments by the present inventors. That is, the present inventor found out that in the conventional cast iron surface plate, the agglomerated grains of the abrasive grains were present in the abrasive grain waste liquid during lapping. As a condition under which this aggregation easily occurs, it was found that the hardness of the surface plate and the degree of deformation of the surface of the surface plate due to the abrasive grains are large factors. Further, in the cast iron platen, the graphite particles are conventionally said to be insufficient as a lubricating aid to act as a fixed site for free abrasive grains, and further promote the rolling operation of the abrasive grains. The present invention has been accomplished based on the finding that it is necessary.
【００１４】以上の知見により達成された本発明は、金
属製定盤を従来の球状黒鉛鋳鉄のような複合組織ではな
く、均一基地組織とし、かつ硬さをビッカース硬度Ｈv
値：２００以上とすることによって、砥粒の安定性を向
上可能とした。すなわち、ラッピング中の砥粒の凝集粒
形成を抑制し、砥粒の粒度分布を不揃いにすることを回
避することが可能となる。なお、本発明のビッカース硬
度Ｈv 値とは、硬脆材料を対象とするため、実際に測定
した測定値に等しいと考えられる他の硬度測定法から
の、ビッカース硬度Ｈv 値への換算値を表わす。According to the present invention achieved by the above findings, the metal surface plate has a uniform matrix structure rather than the composite structure of the conventional spheroidal graphite cast iron, and the hardness is Vickers hardness H v.
By setting the value to 200 or more, the stability of the abrasive grains can be improved. That is, it is possible to suppress the formation of agglomerates of the abrasive grains during lapping and to avoid making the particle size distribution of the abrasive grains uneven. The Vickers hardness H v value of the present invention is a value converted to a Vickers hardness H v value from another hardness measurement method that is considered to be equal to the actually measured value because it is intended for hard and brittle materials. Represents
【００１５】また、本発明の特徴は、砥粒による押込
み、堀り起し、引きちぎりによりラッピング中の表面粗
さが粗くなる軟質材の欠点を改善し、定盤の平坦度が維
持可能とする。さらに、本発明は、生産性の面からは研
磨速度の要因として、重要である研磨圧力および砥粒径
の一定条件下で、前記砥粒による押し込み、堀起し、引
きちぎり現象を少なくするために、ビッカース硬度Ｈv
値：２００以上の定盤を実現し、砥粒の転動が十分とな
ることで研磨速度が向上する。Further, the feature of the present invention is to improve the defect of the soft material in which the surface roughness during lapping becomes rough due to indentation, excavation and tearing by abrasive grains, and the flatness of the surface plate can be maintained. To do. Further, the present invention, as a factor of the polishing rate from the aspect of productivity, under the constant conditions of polishing pressure and abrasive grain size, which are important, indentation by the abrasive grains, digging, and to reduce the tearing-off phenomenon. And Vickers hardness H v
A polishing plate having a value of 200 or more is realized, and the rolling of the abrasive grains is sufficient to improve the polishing rate.
【００１６】次に、本発明の限定理由について説明す
る。化学成分については、Ｃは材質の強度を決定する基
本成分であって、通常Ｃ：2.0 重量％未満が鋼である
が、本発明では晶出黒鉛を完全に避け、かつ強度をでき
るだけ高くするために、1.5 重量％以下に限定する。こ
れは晶出黒鉛が存在していると、研磨中に晶出黒鉛直上
において、鋼材のブローホール欠陥のような隆起を生じ
て、定盤の平坦度を劣化させる。好ましくは、安定した
均一パーライト相の得られる共析炭素成分すなわち0.95
〜0.60重量％で、ビッカース硬度Ｈv 値：２００以上が
得られる範囲である。下限値は特に限定するものではな
く、合金成分によって前記条件を満足してもよい。Next, the reasons for limitation of the present invention will be described. Regarding the chemical composition, C is the basic component that determines the strength of the material, and usually C: less than 2.0% by weight is steel. However, in the present invention, crystallized graphite is completely avoided and the strength is made as high as possible. In addition, it is limited to 1.5% by weight or less. This is because if crystallized graphite is present, a ridge like a blowhole defect of the steel material is generated immediately above the crystallized graphite during polishing, and the flatness of the surface plate is deteriorated. Preferably, the eutectoid carbon component, that is, 0.95, which gives a stable and uniform pearlite phase.
It is a range where a Vickers hardness H v value of 200 or more can be obtained at a content of up to 0.60% by weight. The lower limit is not particularly limited, and the above conditions may be satisfied depending on the alloy components.
【００１７】また、Ｃｒは防錆性、耐食性および強度向
上から重要な元素である。Ｃｒ：１重量％未満ではこれ
らの効果が期待できない。また、Ｃｒ：20重量％超で
は、延性が十分でなく、また合金コスト的に問題となる
ため、１〜20重量％の範囲に限定する。好ましくはＣ
ｒ：10〜20％重量の範囲である。さらに、本発明は鋳造
により溶鋼からの製造を前提とするものであり、前記以
外の他の化学成分は、Ｓｉ≦1.5 重量％、Ｍｎ≦1.0 重
量％、Ｐ≦0.04重量％、Ｓ≦0.04重量％であることが好
ましい。また、不可避的不純物としての成分は通常レベ
ルであって良く、特に限定されるものではない。以下、
本発明について、実施例の図面を参照してさらに詳述す
る。Further, Cr is an important element from the viewpoint of rust prevention, corrosion resistance and strength improvement. If Cr is less than 1% by weight, these effects cannot be expected. On the other hand, if the Cr content exceeds 20% by weight, the ductility is not sufficient and the alloy cost becomes a problem, so the content is limited to the range of 1 to 20% by weight. Preferably C
r: It is in the range of 10 to 20% by weight. Furthermore, the present invention is premised on manufacturing from molten steel by casting, and other chemical components other than the above are Si ≤ 1.5 wt%, Mn ≤ 1.0 wt%, P ≤ 0.04 wt%, S ≤ 0.04 wt%. % Is preferable. The component as an unavoidable impurity may be at a normal level and is not particularly limited. Less than,
The present invention will be described in more detail with reference to the drawings of the embodiments.
【００１８】[0018]
実施例１ 本発明の実施例として、実際の適用分野であるシリコン
ウェハーを始めとする精密部材のラッピング研磨を前提
とした。本実施例において、ラッピング研磨に使用され
る各種金属製定盤の硬度・組織について、砥粒の凝集状
態を把握するための試験を行った。研磨液は、研磨剤、
ラップオイルおよび水を使用し、研磨条件は荷重:140g/
ｃm2とし一定条件とし、シリコンウェハーをラッピング
試料とした。Example 1 As an example of the present invention, it was premised on lapping polishing of a precision member such as a silicon wafer which is an actual application field. In this example, the hardness and structure of various metal surface plates used for lapping polishing were tested to understand the agglomeration state of abrasive grains. The polishing liquid is an abrasive,
Lapping oil and water are used, and polishing conditions are load: 140g /
The silicon wafer was used as a lapping sample under a constant condition of cm 2 .
【００１９】また、定盤の材質を成分の異なる８種類使
用し、各定盤での硬度がそれぞれ異なり、その試験範囲
は、代表的化学成分としてＣ：0.02〜0.7 重量％で、か
つ硬度Ｈv ：95〜250 を試験材とした。なお、比較材と
した従来の球状黒鉛鋳鉄（FCD 材) の硬度Ｈv は157 で
あった。Further, eight kinds of surface plate materials having different components are used, each surface plate has different hardness, and the test range is C: 0.02 to 0.7% by weight as a typical chemical component and the hardness H. v : 95 to 250 was used as the test material. The hardness H v of the conventional spheroidal graphite cast iron (FCD material) used as a comparative material was 157.
【００２０】図１は本実施例での、硬度と粗大砥粒凝集
粒発生率との関係をプロットしたものである。この図よ
り、本発明材の球状黒鉛鋳鉄（FCD 材) の硬度より高い
ものでは、すなわち硬度Ｈv が200 以上であれば、粗大
砥粒凝集粒発生はなく良好な結果となっている。これに
対して、従来の鋳鉄定盤（特に球状黒鉛鋳鉄）では、ラ
ッピング中に砥粒の凝集粒が生じ、粗大凝集粒化の発生
率が高く、結果として不均一な砥粒となることがわかっ
た。言い換えれば、ビッカース硬度Ｈv 値：２００未満
の軟質の場合、粗大凝集粒の発生が結果的に砥粒の粒度
分布を不揃いにさせることになる。FIG. 1 is a plot of the relationship between the hardness and the generation rate of coarse-grained agglomerates in this example. From this figure, when the hardness is higher than that of the spheroidal graphite cast iron (FCD material) of the present invention, that is, when the hardness H v is 200 or more, the coarse abrasive grain agglomerate is not generated, which is a good result. On the other hand, in the conventional cast iron surface plate (particularly spheroidal graphite cast iron), agglomerates of abrasive grains are generated during lapping, the occurrence rate of coarse agglomerates is high, and as a result, nonuniform abrasive grains are formed. all right. In other words, when the Vickers hardness H v value is softer than 200, the generation of coarse agglomerates results in uneven particle size distribution of the abrasive grains.
【００２１】この箇所では、砥粒による押込み、堀り起
し、引きちぎりが起こるとともに、膨れ部分の黒鉛の剥
離が同時に生ずることになる。このことから、球状黒鉛
鋳鉄等の軟質定盤の場合、砥粒による押込み、堀り起
し、引きちぎりによりラッピング中の表面粗さは粗くな
ることがわかる。この関係について、図３に表面粗さと
硬度との関係を示す。この図より、本発明材の硬度
Ｈv ：200 以上では、表面粗さにおいても比較的良好な
値を示している。前述のように軟質定盤の場合、特に球
状黒鉛鋳鉄の場合定盤の平坦度が維持され難く、局部的
なポケット或いは隆起部において砥粒の凝集化が生じ易
い。At this point, indentation by the abrasive grains, digging up, and tearing occur, and at the same time, exfoliation of graphite in the swollen portion occurs. From this, it is understood that in the case of a soft surface plate such as spheroidal graphite cast iron, the surface roughness during lapping becomes rough due to indentation by abrasive grains, digging up, and tearing. Regarding this relationship, FIG. 3 shows the relationship between the surface roughness and the hardness. From this figure, when the hardness H v of the material of the present invention is 200 or more, the surface roughness shows a relatively good value. As described above, in the case of a soft surface plate, particularly in the case of spheroidal graphite cast iron, it is difficult to maintain the flatness of the surface plate, and the agglomeration of abrasive grains is likely to occur in a local pocket or a raised portion.
【００２２】図２に、実際の光学顕微鏡による金属組織
写真を示す。図２は、膨れ発生箇所の表面状況を示し、
球状黒鉛粒の直上で、鋼における溶解中の残留気体によ
るブローホール現象のように、黒鉛部で隆起が生じてい
る。以上のことからも、本発明材では基地組織として複
合組織ではなく均一基地組織とし、かつ硬さをビッカー
ス硬さＨv ：２００以上とすることで、従来技術の持っ
ている砥粒の凝集現象を回避することができ、ラッピン
グの基本的な課題である砥粒粒度分布の安定化をはかる
ことが可能となる。FIG. 2 shows a photograph of a metal structure by an actual optical microscope. FIG. 2 shows the surface condition of the location where the swelling occurs,
Immediately above the spherical graphite particles, a bulge is generated in the graphite portion like a blowhole phenomenon due to residual gas in the steel during melting. From the above, the agglomeration phenomenon of the abrasive grains, which the prior art has, can be obtained by using the material of the present invention as a matrix structure, not as a composite structure, as a uniform matrix structure and with a hardness of Vickers hardness H v : 200 or more. Therefore, it is possible to stabilize the abrasive grain size distribution, which is a basic problem of lapping.
【００２３】実施例２ 本実施例は、研磨液および研磨条件は実施例１と同様に
して、表１に示す化学成分および熱処理条件で、表２に
示す硬度の定盤を製作し、シリコンウェハーをラッピン
グしその評価を行った。Example 2 In this example, the polishing liquid and the polishing conditions were the same as in Example 1, and the surface plate having the hardness shown in Table 2 was manufactured under the chemical composition shown in Table 1 and the heat treatment condition. Was wrapped and evaluated.
【００２４】[0024]
【表１】 [Table 1]
【００２５】[0025]
【表２】 [Table 2]
【００２６】これらの表より、本発明材は均一基地組織
の鉄−Ｃｒ系および鉄−Ｃ系であり、それぞれソルバイ
ト系、および共析パーライト系の組織である。一方、比
較材は黒鉛とフェライトまたはパーライトからなる複合
基地組織である球状黒鉛鋳鉄で、従来一般的に使用され
ている球状黒鉛鋳鉄製定盤である。評価特性としてラッ
ピング研磨速度指数とラッピング中の砥粒粒度不揃指数
を評価し、その結果を表２に合わせて示す。From these tables, the material of the present invention has an iron-Cr system and an iron-C system having a uniform matrix structure, respectively, a sorbite system structure and a eutectoid pearlite system structure. On the other hand, the comparative material is spheroidal graphite cast iron, which is a composite matrix structure composed of graphite and ferrite or pearlite, and is a spheroidal graphite cast iron surface plate that has been generally used conventionally. As the evaluation characteristics, the lapping polishing rate index and the abrasive grain size irregularity index during lapping were evaluated, and the results are also shown in Table 2.
【００２７】本発明材は、比較材にくらべて研磨速度は
改善され、かつひっかき疵（スクラッチ疵）の主要因で
ある砥粒の不揃いも大幅に改善された。このことは、こ
れまでラッピング研磨速度は研磨圧力、砥粒径に比例す
るとされ、従来の球状黒鉛鋳鉄の場合、黒鉛粒が砥粒の
固定サイトとして働き研磨効率を向上させ、かつ黒鉛が
潤滑作用を促進するのですぐれているとされて来た。し
かしながら、前述のように工業的に得られる球状黒鉛の
大きさ、およびその存在量は遊離砥粒の固定サイトとし
て作用するには十分でないことがわかる。The material of the present invention has an improved polishing rate as compared with the comparative material, and the unevenness of the abrasive grains, which is the main cause of scratches (scratch flaws), has been greatly improved. This means that the lapping polishing rate is proportional to the polishing pressure and the abrasive grain size so far.In the case of conventional spheroidal graphite cast iron, the graphite grains act as a fixing site for the abrasive grains to improve the polishing efficiency, and the graphite has a lubricating action. It has been said to be excellent because it promotes. However, as described above, it is understood that the size and the amount of spherical graphite obtained industrially are not sufficient to act as a fixed site for free abrasive grains.
【００２８】図４はシリコンウェハーの研磨速度指数と
硬さとの関係を示す図である。この図より、研磨圧力、
砥粒が一定条件の場合、前述の如く砥粒による押し込
み、堀起し、引きちぎり現象の少いビッカース硬さ
Ｈv ：２００以上の定盤の方が研磨速度は向上すること
がわかった。なお、本図に示すように球状黒鉛鋳鉄も同
図の相関関係の中に収まり、研磨速度は黒鉛サイトの有
無に関わらず定盤の硬さに依存することがわかる。FIG. 4 is a diagram showing the relationship between the polishing rate index and the hardness of a silicon wafer. From this figure, polishing pressure,
It has been found that, when the abrasive grains are in a constant condition, a polishing plate having a Vickers hardness H v of 200 or more, which has less indentation, digging and tearing by the abrasive grains as described above, improves the polishing rate. As shown in this figure, spheroidal graphite cast iron also falls within the correlation shown in the figure, and it can be seen that the polishing rate depends on the hardness of the surface plate regardless of the presence or absence of graphite sites.
【００２９】[0029]
【発明の効果】本発明は、シリコン等の硬脆材料のラッ
ピング研磨に対して、定盤の基地組織を単相からなる均
一組織とし、かつ硬度を規制することによって、砥粒が
研磨中に凝集することを抑制し、かつ定盤の平坦度を向
上させることを実現した。また、本発明によってラッピ
ング研磨の生産性及び製品品質の向上を図ることが可能
となり、その工業的寄与は大きい。According to the present invention, for lapping and polishing of hard and brittle materials such as silicon, the base structure of the surface plate has a uniform structure consisting of a single phase, and the hardness is regulated so that the abrasive grains can be removed during polishing. Achieved to suppress aggregation and improve the flatness of the surface plate. Further, the present invention makes it possible to improve the productivity of lapping polishing and the product quality, and its industrial contribution is great.
【図１】本発明の実施例に係る定盤のビッカース換算硬
さとラッピング中の粗大凝集粒発生率との関係を示すグ
ラフである。FIG. 1 is a graph showing the relationship between the Vickers-equivalent hardness of a surface plate according to an example of the present invention and the coarse aggregate particle generation rate during lapping.
【図２】比較材の球状黒鉛鋳鉄定盤の膨れ発生状況を示
す光学顕微鏡による金属組織写真である。FIG. 2 is a metallographic photograph by an optical microscope showing the occurrence of swelling of a spheroidal graphite cast iron platen as a comparative material.
【図３】本発明の実施例に係る定盤のビッカース換算硬
さと表面粗さとの関係を示すグラフである。FIG. 3 is a graph showing the relationship between Vickers equivalent hardness and surface roughness of a surface plate according to an example of the present invention.
【図４】本発明の実施例に係る定盤のビッカース換算硬
さとシリコンウェハーの研磨速度指数との関係を示す図
である。FIG. 4 is a diagram showing a relationship between Vickers conversion hardness of a surface plate and a polishing rate index of a silicon wafer according to an example of the present invention.
Claims (5)
グ定盤において、化学成分として、Ｃ：1.5 重量％以下
の炭素鋼からなり、該炭素鋼は少なくとも黒鉛等の晶出
物を第二相とする複合組織を含まない単相からなる均一
組織を有し、かつビッカース硬度Ｈv 値：200 以上であ
ることを特徴とするラッピング定盤。1. A lapping platen for supplying abrasive grains to polish a material, which comprises, as a chemical component, C: 1.5% by weight or less of carbon steel, the carbon steel containing at least a crystallized substance such as graphite. A lapping plate having a uniform structure consisting of a single phase not containing a composite structure as a phase and having a Vickers hardness Hv value of 200 or more.
グ定盤において、化学成分として、Ｃ：1.5 重量％以下
の炭素鋼からなり、該炭素鋼は少なくとも黒鉛等の晶出
物を第二相とする複合組織を含まない単相からなる均一
組織を有し、かつビッカース硬度Ｈv 値：200 以上であ
って、研磨中に砥粒による凝集粒の形成を抑制すること
を特徴とする砥粒安定性に優れた高機能ラッピング定
盤。2. A lapping platen for supplying abrasive grains to polish a material, wherein the chemical component is C: 1.5% by weight or less of carbon steel, the carbon steel containing at least a crystallized substance such as graphite. Abrasive grains having a uniform structure consisting of a single phase that does not include a composite structure as a phase, and having a Vickers hardness Hv value of 200 or more and suppressing formation of agglomerates by abrasive grains during polishing. Highly functional lapping surface plate with excellent stability.
共析鋼成分からなり、かつ初析炭化物を含まないフェラ
イトおよびセメンタイトのパーライト単相からなる均一
組織であることを特徴とする請求項１または２記載のラ
ッピング定盤。3. The carbon steel has a uniform structure consisting of a eutectic steel component of C: 0.95 to 0.60% by weight and a pearlite single phase of ferrite and cementite containing no proeutectoid carbide. The lapping plate according to claim 1 or 2.
含有する合金鋼であることを特徴とする請求項１から３
のいずれかに記載の防錆性に優れたラッピング定盤。4. The carbon steel further contains 1 to 20% by weight of Cr.
It is alloy steel containing, It is characterized by the above-mentioned.
Lapping surface plate excellent in rust prevention described in any of 1.
脆材料からなる半導体基盤のラッピング用に使用するこ
とを特徴とする請求項１から４のいずれかに記載のラッ
ピング定盤。5. The lapping platen according to claim 1, wherein the lapping platen is used for lapping a semiconductor substrate made of a hard and brittle material such as silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20180395A JPH0929623A (en) | 1995-07-17 | 1995-07-17 | Lapping surface plate of high function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20180395A JPH0929623A (en) | 1995-07-17 | 1995-07-17 | Lapping surface plate of high function |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0929623A true JPH0929623A (en) | 1997-02-04 |
Family
ID=16447188
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20180395A Pending JPH0929623A (en) | 1995-07-17 | 1995-07-17 | Lapping surface plate of high function |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0929623A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0827810A1 (en) * | 1996-09-05 | 1998-03-11 | Kabushiki Kaisha Toshiba | Material for lapping tools and lapping surface plate using the same |
| KR20170123816A (en) * | 2016-04-29 | 2017-11-09 | 이화다이아몬드공업 주식회사 | Lapping plate with excellent lapping rate for brittle materials having high hardness and using apparatus for polishing substrate using the same |
-
1995
- 1995-07-17 JP JP20180395A patent/JPH0929623A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0827810A1 (en) * | 1996-09-05 | 1998-03-11 | Kabushiki Kaisha Toshiba | Material for lapping tools and lapping surface plate using the same |
| KR20170123816A (en) * | 2016-04-29 | 2017-11-09 | 이화다이아몬드공업 주식회사 | Lapping plate with excellent lapping rate for brittle materials having high hardness and using apparatus for polishing substrate using the same |
| CN107336145A (en) * | 2016-04-29 | 2017-11-10 | 二和金刚石工业株式会社 | For rapid processing high rigidity, the abrasive sheet and lapping device of high brittle base |
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