JPH09293889A - Solar cell element - Google Patents
Solar cell elementInfo
- Publication number
- JPH09293889A JPH09293889A JP8105874A JP10587496A JPH09293889A JP H09293889 A JPH09293889 A JP H09293889A JP 8105874 A JP8105874 A JP 8105874A JP 10587496 A JP10587496 A JP 10587496A JP H09293889 A JPH09293889 A JP H09293889A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- semiconductor substrate
- solar cell
- back surface
- cell element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
(57)【要約】
【課題】 裏面電極の強度の小さくて微小な亀裂が発生
したり、水素によるパシベーション効果が低減して変換
効率の低下するという問題があった。
【解決手段】 半導体基板内にＰ−Ｎ接合部を形成し
て、この半導体基板の表裏両面に電極を設けてなる太陽
電池素子において、前記裏面電極をバスバー電極部と、
このバスバー電極部に交差して多数本形成されたフィン
ガー電極部と、このフィンガー電極部から矢形に広がる
ように多数形成された枝電極部とで構成するとともに、
この裏面電極の占有面積を前記半導体基板裏面の６０％
以上とし、且つ前記枝電極部間の間隔を０．１〜０．９
ｍｍに設定した。
(57) [Abstract] [Problem] There is a problem that the strength of the back surface electrode is small and minute cracks are generated, and the passivation effect due to hydrogen is reduced to lower the conversion efficiency. SOLUTION: In a solar cell element in which a P-N junction is formed in a semiconductor substrate and electrodes are provided on both front and back surfaces of this semiconductor substrate, the back electrode is a bus bar electrode portion.
A plurality of finger electrode portions are formed so as to intersect the bus bar electrode portion, and a plurality of branch electrode portions are formed so as to spread in an arrow shape from the finger electrode portion,
The area occupied by this back electrode is 60% of the back surface of the semiconductor substrate.
The distance between the branch electrode portions is 0.1 to 0.9.
mm.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は太陽電池素子に関
し、特に半導体基板内にＰ−Ｎ接合部を形成して表裏両
面に電極を形成した太陽電池素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell element, and more particularly to a solar cell element in which a PN junction is formed in a semiconductor substrate and electrodes are formed on both front and back surfaces.
【０００２】[0002]
【従来の技術】従来の太陽電池素子の構造を図４に示
す。図４において、２１はＰ型半導体基板、２２はＮ
層、２３は表面電極、２４は反射防止膜、２５はＰ
+ 層、２６は裏面電極である。例えば厚さ０．５ｍｍ程
度の単結晶又は多結晶のシリコンなどから成るＰ型半導
体基板２１の一主面側に０．２〜０．５μｍの深さにリ
ン（Ｐ）等を拡散させたＮ層２２を設け、このＮ層２２
の表面に、銀、アルミニウム、ニッケル等から成るグリ
ッド状の表面電極２３及びこの表面電極２３の間隙に窒
化シリコン膜や酸化シリコン膜などから成る反射防止膜
２４を設けて構成されている。また、半導体基板２１の
他の主面側には、銀、アルミニウム、ニッケルなどから
成る裏面電極２６を設けている。2. Description of the Related Art The structure of a conventional solar cell element is shown in FIG. In FIG. 4, 21 is a P-type semiconductor substrate and 22 is N.
Layer, 23 is a surface electrode, 24 is an antireflection film, and 25 is P
The + layer, 26 is a back electrode. For example, N in which phosphorus (P) or the like is diffused to a depth of 0.2 to 0.5 μm on one main surface side of the P-type semiconductor substrate 21 made of single crystal or polycrystalline silicon having a thickness of about 0.5 mm. A layer 22 is provided, and this N layer 22
Is formed by providing a grid-shaped surface electrode 23 made of silver, aluminum, nickel, or the like on the surface of, and an antireflection film 24 made of a silicon nitride film or a silicon oxide film in a gap between the surface electrodes 23. A back electrode 26 made of silver, aluminum, nickel, or the like is provided on the other main surface side of the semiconductor substrate 21.
【０００３】そして表面電極２３及び裏面電極２６上に
は、外部リード線が容易に接続できるように半田層（不
図示）などが設けられる。なお、反射防止膜２４はプラ
ズマＣＶＤ法などで形成され、表面電極２３及び裏面電
極２６はスクリーン印刷法などの厚膜手法で形成され
る。この裏面電極２６は、半導体基板２１の裏面側全面
に形成されたり、グリッド状に形成される。A solder layer (not shown) or the like is provided on the front surface electrode 23 and the back surface electrode 26 so that external lead wires can be easily connected. The antireflection film 24 is formed by a plasma CVD method or the like, and the front surface electrode 23 and the back surface electrode 26 are formed by a thick film method such as a screen printing method. The back surface electrode 26 is formed on the entire back surface side of the semiconductor substrate 21 or in a grid shape.
【０００４】また、アルミニウムなどを高濃度に拡散さ
せたＰ+ 高濃度領域２５は、半導体基板２１の裏面側の
内部電解によって、少数キャリア（電子）の再結合速度
を遅くさせて短絡電流を向上させ、もって太陽電池の変
換効率を高めるために設けるものである。The P + high concentration region 25 in which aluminum or the like is diffused at a high concentration slows the recombination rate of minority carriers (electrons) by internal electrolysis on the back surface side of the semiconductor substrate 21 and improves the short circuit current. Therefore, it is provided to increase the conversion efficiency of the solar cell.
【０００５】[0005]
【発明が解決しようとする課題】ところが、この従来の
太陽電池素子では、裏面電極２６を半導体基板２１の裏
面側全面に形成する場合、金属ペーストの使用量が増大
して製造コストが上昇するとともに、裏面電極２６に金
属ペーストを焼き付けた後の内部応力が残留して、金属
ペーストの接着強度が弱くなったり、半導体基板２１に
ソリが発生するという問題があった。However, in this conventional solar cell element, when the back surface electrode 26 is formed on the entire back surface side of the semiconductor substrate 21, the amount of metal paste used increases and the manufacturing cost increases. However, there is a problem that internal stress after baking the metal paste on the back electrode 26 remains, the adhesive strength of the metal paste is weakened, and warpage occurs in the semiconductor substrate 21.
【０００６】一方、裏面電極２６をグリッド状に形成す
る場合は、半導体基板２１のソリなどが発生することは
減少するが、半導体基板２１内に結晶粒界の界面準位を
低下させる目的で注入もしくは存在する水素がグリッド
状電極を焼き付ける際の熱工程でグリッド状電極の間か
ら抜け出やすくなり、水素によるパシベーション効果が
減少して太陽電池素子の変換効率が低下するという問題
があった。On the other hand, when the back surface electrode 26 is formed in a grid shape, the occurrence of warpage of the semiconductor substrate 21 is reduced, but implantation is performed for the purpose of lowering the interface level of crystal grain boundaries in the semiconductor substrate 21. Alternatively, there is a problem that existing hydrogen easily escapes from between the grid electrodes in a thermal process when baking the grid electrodes, and the passivation effect due to hydrogen decreases and the conversion efficiency of the solar cell element decreases.
【０００７】本発明は、このような従来技術の問題点に
鑑みて発明されたものであり、裏面電極の接着強度の低
下や半導体基板２１のソリの発生を解消するとともに、
水素によるパシベーション効果の低減による変換効率の
低下を解消した太陽電池素子を提供することを目的とす
る。The present invention has been invented in view of the problems of the prior art as described above, and solves the problem of the lowering of the adhesion strength of the back electrode and the occurrence of warpage of the semiconductor substrate 21.
It is an object of the present invention to provide a solar cell element in which a reduction in conversion efficiency due to a reduction in passivation effect due to hydrogen is eliminated.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
に、本発明に係る太陽電池素子では、半導体基板内にＰ
−Ｎ接合部を形成して、この半導体基板の表裏両面に電
極を設けてなる太陽電池素子において、前記裏面電極を
バスバー電極部と、このバスバー電極部に交差して多数
本形成されたフィンガー電極部と、このフィンガー電極
部から矢形に広がるように多数形成された枝電極部とで
構成するとともに、この裏面電極の占有面積を前記半導
体基板裏面の６０％以上とし、且つ前記枝電極部間の間
隔を０．１〜０．９ｍｍに設定した。In order to achieve the above object, in the solar cell element according to the present invention, P is provided in a semiconductor substrate.
A solar cell element in which an N-junction portion is formed and electrodes are provided on both front and back surfaces of this semiconductor substrate. In the solar cell element, the back surface electrode is a bus bar electrode portion, and a large number of finger electrodes are formed so as to intersect the bus bar electrode portion. And a plurality of branch electrode portions formed so as to spread in an arrow shape from the finger electrode portion, the back electrode occupying area is 60% or more of the back surface of the semiconductor substrate, and the space between the branch electrode portions is large. The spacing was set to 0.1-0.9 mm.
【０００９】[0009]
【発明の実施の形態】以下、本発明を添付図面に基づき
詳細に説明する。図１は、本発明に係る太陽電池素子の
一実施形態を示す図であり、１は半導体基板、２は裏面
電極である。半導体基板１は、図４に示す従来の太陽電
池素子と同様に、例えば厚さ０．５ｍｍ程度の単結晶又
は多結晶のＰ型シリコン基板などから成り、このＰ型シ
リコン基板１の一主面側にリン（Ｐ）等を０．２〜０．
５μｍ程度の深さに拡散させたＮ層を設け、このＮ層の
表面に表面電極（不図示）と反射防止膜（不図示）を形
成したものである。前記Ｐ型シリコン基板は、単結晶で
形成する場合は引き上げ法やフローティングゾーン法な
どで形成され、多結晶で形成する場合は鋳込み法などで
形成される。このようなインゴットから所定寸法の基板
に切り出して、ＰＯＣｌ3 などをバブリングしながらリ
ンを熱拡散法などで拡散させて半導体基板１の一主面側
にＮ層を形成する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a diagram showing an embodiment of a solar cell element according to the present invention, in which 1 is a semiconductor substrate and 2 is a back electrode. The semiconductor substrate 1 is made of, for example, a single crystal or polycrystalline P-type silicon substrate having a thickness of about 0.5 mm, as in the conventional solar cell element shown in FIG. Phosphorus (P) or the like on the side of 0.2 to 0.
An N layer diffused to a depth of about 5 μm is provided, and a surface electrode (not shown) and an antireflection film (not shown) are formed on the surface of the N layer. The P-type silicon substrate is formed by a pulling method, a floating zone method, or the like when formed of a single crystal, and a casting method or the like when formed of a polycrystal. A substrate having a predetermined size is cut out from such an ingot, and phosphorus is diffused by a thermal diffusion method or the like while bubbling POCl 3 or the like to form an N layer on the one main surface side of the semiconductor substrate 1.
【００１０】なお、表面電極も図４に示す従来の太陽電
池素子と同様に、銀（Ａｇ）、アルミニウム（Ａｌ）、
ニッケル（Ｎｉ）などから成り、厚膜手法でグリッド状
に形成される。また、半導体基板１の表面側の表面電極
が形成されない部位には、窒化シリコン（ＳｉＮx ）、
二酸化シリコン（ＳｉＯ2 ）、二酸化マグネシウム（Ｍ
ｇＯ2 ）などから成る反射防止膜が形成される。The surface electrode is also made of silver (Ag), aluminum (Al), as in the conventional solar cell element shown in FIG.
It is made of nickel (Ni) or the like and is formed in a grid shape by a thick film method. Further, silicon nitride (SiN x ), on the surface side of the semiconductor substrate 1 where the surface electrode is not formed,
Silicon dioxide (SiO 2 ), magnesium dioxide (M
An antireflection film made of gO 2 ) or the like is formed.
【００１１】半導体基板１の裏面側には、裏面電極２が
形成されている。この裏面電極２は、複数の太陽電池素
子同志を接続するための銅箔などが半田付けされるバス
バー電極部２ａ、このバスバー電極部２ａに交差して多
数形成されたフィンガー電極部２ｂで構成されている。
図２に示すように、このフィンガー電極部２ｂには、枝
電極部２ｃが矢形に広がって接続されている。この枝電
極部２ｃは所定のピッチｐで所定の間隔ｄをもって形成
される。この裏面電極２も従来の太陽電池素子と同様
に、銀（Ａｇ）、アルミニウム（Ａｌ）、ニッケル（Ｎ
ｉ）などから成り、厚膜手法で形成される。なお、図２
は図１のＡ部拡大図であり、図２中、ｗは枝電極部２ｃ
の幅である。A back surface electrode 2 is formed on the back surface side of the semiconductor substrate 1. The back surface electrode 2 is composed of a bus bar electrode portion 2a to which a copper foil or the like for connecting a plurality of solar cell elements is soldered, and a large number of finger electrode portions 2b intersecting the bus bar electrode portion 2a. ing.
As shown in FIG. 2, the branch electrode portion 2c is connected to the finger electrode portion 2b so as to spread in an arrow shape. The branch electrode portions 2c are formed with a predetermined pitch p and a predetermined distance d. This back electrode 2 is also made of silver (Ag), aluminum (Al), nickel (N), as in the conventional solar cell element.
i) and the like, and is formed by a thick film method. Note that FIG.
2 is an enlarged view of part A of FIG. 1, and w is a branch electrode part 2c in FIG.
Is the width of
【００１２】この裏面電極２は、半導体基板１の裏面側
の全面積の６０％以上を占めるように形成される。すな
わち、裏面電極２が半導体基板１の裏面側の全面積の６
０％以下になると、パシベーション効果を期待して注入
される水素が半導体基板１の裏面側から抜け出し、太陽
電池素子の変換効率が低下する。すなわち、裏面電極に
よる水素の閉じ込め効果が小さくなる。The back surface electrode 2 is formed so as to occupy 60% or more of the total area of the back surface side of the semiconductor substrate 1. That is, the back surface electrode 2 has a total area of 6 on the back surface side of the semiconductor substrate 1.
When the content is 0% or less, the hydrogen injected with the expectation of the passivation effect escapes from the back surface side of the semiconductor substrate 1, and the conversion efficiency of the solar cell element decreases. That is, the effect of confining hydrogen by the back electrode is reduced.
【００１３】また、多数の枝電極２ｃ間の間隔ｄは、
０．１〜０．９ｍｍに設定される。すなわち、電極の幅
ｗが２ｍｍ以上になると電極の強度が弱くなることか
ら、裏面電極２の強度を増大させるためには、枝電極部
２ｃを連続して形成するのではなく、所定の間隔ｄを有
するようにそれぞれ分離して形成しなければならない。
現在の厚膜手法では、製造技術上、電極間の間隔が０．
１ｍｍ以下になるようには形成できない。また、裏面電
極２のフィンガー電極部２ｂ及び枝電極部２ｃの電極幅
ｗを２ｍｍにして、半導体基板１の裏面側の６０％が電
極で占有されるようにするためには、枝電極部２ｃの間
隔は０．９ｍｍとなる。したがって、枝電極部２ｃの間
隔ｄは、０．１〜０．９ｍｍに設定される。The spacing d between the multiple branch electrodes 2c is
It is set to 0.1 to 0.9 mm. That is, when the width w of the electrode is 2 mm or more, the strength of the electrode becomes weak. Therefore, in order to increase the strength of the back surface electrode 2, the branch electrode portion 2c is not formed continuously but at a predetermined distance d. Must be formed separately from each other.
In the current thick film method, the distance between the electrodes is 0.
It cannot be formed to be 1 mm or less. Further, in order to make the electrode width w of the finger electrode portion 2b and the branch electrode portion 2c of the back surface electrode 2 2 mm so that 60% of the back surface side of the semiconductor substrate 1 is occupied by the electrode, the branch electrode portion 2c Is 0.9 mm. Therefore, the distance d between the branch electrode portions 2c is set to 0.1 to 0.9 mm.
【００１４】半導体基板内に存在もしくは注入した水素
によるパシベーション効果を増大させるためには、裏面
電極の面積を増大させればよい。裏面電極の面積を増大
させる方法として、半導体基板の裏面側全面に電極を形
成する方法と、グリッド状電極の幅を広くする方法を考
えられるが、半導体基板の裏面側の全面に電極を形成し
たり、単純に電極幅を拡げると従来技術のような問題が
発生する。したがって、本発明では、半導体基板１の裏
面側の６０％以上裏面電極で占有されるように裏面電極
を形成すると共に、枝電極部２ｃの間隔ｄを０．１〜
０．９ｍｍに設定される。In order to increase the passivation effect due to the hydrogen present or injected in the semiconductor substrate, the area of the back electrode should be increased. As a method of increasing the area of the back surface electrode, a method of forming an electrode on the entire back surface side of the semiconductor substrate and a method of widening the width of the grid electrode can be considered. Alternatively, if the electrode width is simply widened, the problems of the conventional technique occur. Therefore, in the present invention, the back surface electrode is formed so that 60% or more of the back surface side of the semiconductor substrate 1 is occupied by the back surface electrode, and the distance d between the branch electrode portions 2c is set to 0.1 to 10.
It is set to 0.9 mm.
【００１５】[0015]
【実施例】厚み０．５ｍｍのＰ形の多結晶シリコン基板
の一主面側に０．５μｍの深さにリン（Ｐ）を１×１０
16ａｔｍ／ｃｍ3 ドーピングしてＮ層を形成するととも
に、他の主面側に１０μｍの深さにアルミニウム（Ａ
ｌ）を１×１０22ａｔｍ／ｃｍ3 ドーピングしてＰ+ 層
を形成し、多結晶シリコン基板の表面側と裏面側に銀か
ら成る表面電極と裏面電極を形成し、表面電極の隙間部
分に窒化シリコンから成る反射防止膜を形成した。[Example] 1 × 10 of phosphorus (P) was formed at a depth of 0.5 μm on one main surface side of a P-type polycrystalline silicon substrate having a thickness of 0.5 mm.
16 atm / cm 3 is doped to form an N layer, and aluminum (A
l) is doped at 1 × 10 22 atm / cm 3 to form a P + layer, and a front surface electrode and a back surface electrode made of silver are formed on the front surface side and the back surface side of the polycrystalline silicon substrate, and in the gap between the front surface electrodes. An antireflection film made of silicon nitride was formed.
【００１６】裏面電極２のフィンガー電極部２ｂと枝電
極部２ｃの幅を１．４ｍｍに設定して、裏面電極の占有
面積を種々変更して太陽電池素子の変換効率を測定し
た。その結果を図３に示す。The conversion efficiency of the solar cell element was measured by setting the widths of the finger electrode portions 2b and the branch electrode portions 2c of the back surface electrode 2 to 1.4 mm and changing the area occupied by the back surface electrode in various ways. The result is shown in FIG.
【００１７】図３から明らかなように、半導体基板の裏
面側における裏面電極の占有率が増大すると太陽電池素
子の変換効率も向上し、特に裏面電極の占有率が６０％
以上になると、裏面電極の占有率が１００％に近いもの
が得られる。したがって、電極間の間隔を所定範囲に設
定して裏面電極の占有率が一定値以上になるようにすれ
ば電極の強度が強く、且つ変換効率の高い太陽電池素子
になることが理解できる。As is apparent from FIG. 3, when the occupancy rate of the back surface electrode on the back surface side of the semiconductor substrate increases, the conversion efficiency of the solar cell element also improves, and especially the occupancy rate of the back surface electrode is 60%.
In the above case, the occupancy of the back electrode is close to 100%. Therefore, it can be understood that a solar cell element having high electrode strength and high conversion efficiency can be obtained by setting the interval between the electrodes within a predetermined range so that the occupancy of the back surface electrode becomes a certain value or more.
【００１８】[0018]
【発明の効果】以上のように、本発明に係る太陽電池素
子によれば、裏面電極をバスバー電極部と多数のフィン
ガー電極部と多数の枝電極部とで構成するとともに、こ
の裏面電極の占有率を半導体基板の裏面側面積の６０％
以上とし、且つ前記枝電極部間の間隔を０．１〜０．９
ｍｍに設定したことから、変換効率と裏面電極の強度の
双方を高く維持できる太陽電池素子が得られる。As described above, according to the solar cell element of the present invention, the back electrode is composed of the bus bar electrode portion, the plurality of finger electrode portions and the plurality of branch electrode portions, and the back electrode is occupied. Rate is 60% of the area of the back side of the semiconductor substrate
The distance between the branch electrode portions is 0.1 to 0.9.
Since the thickness is set to mm, it is possible to obtain a solar cell element capable of maintaining both high conversion efficiency and high strength of the back electrode.
【図１】本発明に係る太陽電池素子の一実施形態を示す
図である。FIG. 1 is a diagram showing an embodiment of a solar cell element according to the present invention.
【図２】図１のＡ部拡大図である。FIG. 2 is an enlarged view of a portion A in FIG.
【図３】太陽電池素子における裏面電極の占有面積を変
化させた場合の変換効率とη（％）を示す図である。FIG. 3 is a diagram showing conversion efficiency and η (%) when the area occupied by the back electrode in the solar cell element is changed.
【図４】従来の太陽電池素子を示す断面図である。FIG. 4 is a cross-sectional view showing a conventional solar cell element.
１・・・半導体基板、２・・・裏面電極 1 ... Semiconductor substrate, 2 ... Back electrode
Claims (1)
て、この半導体基板の表裏両面に電極を設けてなる太陽
電池素子において、前記裏面電極をバスバー電極部と、
このバスバー電極部に交差して多数本形成されたフィン
ガー電極部と、このフィンガー電極部から矢形に広がる
ように多数形成された枝電極部とで構成するとともに、
この裏面電極の占有面積を前記半導体基板裏面の６０％
以上とし、且つ前記枝電極部間の間隔を０．１〜０．９
ｍｍに設定したことを特徴とする太陽電池素子。1. A solar cell element having a P-N junction formed in a semiconductor substrate and electrodes provided on both front and back surfaces of the semiconductor substrate, wherein the back electrode is a bus bar electrode portion.
A plurality of finger electrode portions are formed so as to intersect with the bus bar electrode portion, and a plurality of branch electrode portions are formed so as to spread in an arrow shape from the finger electrode portion,
The area occupied by this back electrode is 60% of the back surface of the semiconductor substrate.
The distance between the branch electrode portions is 0.1 to 0.9.
A solar cell element characterized by being set to mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8105874A JPH09293889A (en) | 1996-04-25 | 1996-04-25 | Solar cell element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8105874A JPH09293889A (en) | 1996-04-25 | 1996-04-25 | Solar cell element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09293889A true JPH09293889A (en) | 1997-11-11 |
Family
ID=14419102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8105874A Pending JPH09293889A (en) | 1996-04-25 | 1996-04-25 | Solar cell element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09293889A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000332269A (en) * | 1999-05-19 | 2000-11-30 | Sharp Corp | Solar cell and method of manufacturing the same |
| JP2005317886A (en) * | 2004-03-29 | 2005-11-10 | Kyocera Corp | Photoelectric conversion device, solar cell element using the same, and solar cell module |
| US7495167B2 (en) * | 2003-10-10 | 2009-02-24 | Hitachi, Ltd. | Silicon solar cell and production method thereof |
| WO2011052466A1 (en) * | 2009-10-28 | 2011-05-05 | 日立化成工業株式会社 | Solar cell |
| WO2011052465A1 (en) * | 2009-10-28 | 2011-05-05 | 日立化成工業株式会社 | Method for producing solar cell |
| CN103171259A (en) * | 2011-12-23 | 2013-06-26 | 昆山允升吉光电科技有限公司 | Solar cell electrode printing halftone and printing method thereof |
| KR20140126819A (en) * | 2013-04-22 | 2014-11-03 | 엘지전자 주식회사 | Solar cell |
| WO2015041444A1 (en) * | 2013-09-17 | 2015-03-26 | 엘지이노텍 주식회사 | Solar cell |
-
1996
- 1996-04-25 JP JP8105874A patent/JPH09293889A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000332269A (en) * | 1999-05-19 | 2000-11-30 | Sharp Corp | Solar cell and method of manufacturing the same |
| US7495167B2 (en) * | 2003-10-10 | 2009-02-24 | Hitachi, Ltd. | Silicon solar cell and production method thereof |
| JP2005317886A (en) * | 2004-03-29 | 2005-11-10 | Kyocera Corp | Photoelectric conversion device, solar cell element using the same, and solar cell module |
| JPWO2011052466A1 (en) * | 2009-10-28 | 2013-03-21 | 日立化成株式会社 | Solar cells |
| WO2011052465A1 (en) * | 2009-10-28 | 2011-05-05 | 日立化成工業株式会社 | Method for producing solar cell |
| CN102576751A (en) * | 2009-10-28 | 2012-07-11 | 日立化成工业株式会社 | Solar cell |
| WO2011052466A1 (en) * | 2009-10-28 | 2011-05-05 | 日立化成工業株式会社 | Solar cell |
| JPWO2011052465A1 (en) * | 2009-10-28 | 2013-03-21 | 日立化成株式会社 | Method for manufacturing solar battery cell |
| CN103171259A (en) * | 2011-12-23 | 2013-06-26 | 昆山允升吉光电科技有限公司 | Solar cell electrode printing halftone and printing method thereof |
| KR20140126819A (en) * | 2013-04-22 | 2014-11-03 | 엘지전자 주식회사 | Solar cell |
| JP2014216652A (en) * | 2013-04-22 | 2014-11-17 | エルジー エレクトロニクスインコーポレイティド | Solar cell |
| EP2797119B1 (en) * | 2013-04-22 | 2019-09-04 | LG Electronics Inc. | Solar cell |
| WO2015041444A1 (en) * | 2013-09-17 | 2015-03-26 | 엘지이노텍 주식회사 | Solar cell |
| CN105637648A (en) * | 2013-09-17 | 2016-06-01 | Lg伊诺特有限公司 | Solar cell |
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