JPH09283693A - High frequency semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize compactness and high integration by mounting a multilayer mode-high frequency circuit chip which is formed to multi-layer and has a grounding conductor by flip chip mounting on a mounting board formed by forming a dielectric film and a wiring layer in multi-layer on a semiconductor board by using a bump. SOLUTION: A mounting board 1 is constituted of a semiconductor board 3, a multilayer dielectric film 7 formed thereon and a grounding conductor 9 formed in a rear of the mounting board 1. A control circuit 12, etc., are formed on the semiconductor substrate 3. A pad for connection with a high frequency circuit chip 2 is formed in a surface of a dielectric film uppermost layer of the mounting board 1 and the multilayer-mode high frequency circuit chip 2 is connected thereto by a face-down structure through a bump 4 formed on a pad. The semiconductor substrate 3, the dielectric film 7 and the grounding conductor 9 are formed in the multilayer-mode high frequency circuit chip 2. Since a circuit can be formed also on a mounting board immediately below the high frequency circuit chip 2 mounted in this way, compactness and high integration can be realized.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device for processing a high frequency signal of, for example, 1 GHz or more, and particularly to downsizing and high integration of the high frequency semiconductor device and obtaining good high frequency characteristics up to the millimeter wave region. The present invention relates to a high-frequency semiconductor device that can be manufactured.

[0002]

2. Description of the Related Art A solder bump made of gold or the like is used as a method for mounting a multi-layered high-frequency circuit chip in which a dielectric film and wiring layers are formed in multiple layers on a semiconductor substrate to form a high-frequency circuit on a mounting substrate. Flip-chip mounting, which is connected in a face-down structure, is used.

4A and 4B are views for explaining flip-chip mounting of a conventional multi-layered high frequency circuit, wherein FIG. 4A is a perspective view and FIG. 4B is a sectional view taken along line AA. In the cross-sectional view of (b), the cross section of the dielectric portion is shown without hatching in order to facilitate understanding of the state of the cross section. This is the same in other drawings described below.

In the figure, numeral 1 is a mounting board, 2
Is a high frequency circuit chip, 3 is a semiconductor substrate, 4 is a bump, 5
Is an FET, 6 is a capacitor, 7 is a dielectric film, 8 is a line,
Reference numeral 9 is a ground conductor, 10 is a signal line bump pad, and 11 is a through hole.

A flip-chip mounting method for such a multi-layered high frequency circuit is described in 1995 IEEEMTT-S International.
Presented at the Microwave Symposium. In such a conventional configuration, the ground conductor 9 and the signal line pad 10 are formed on the uppermost layer surface of the dielectric film 7 of the multilayer high-frequency circuit chip 2, and the signal line 10 on the mounting substrate 1 is grounded by the bump 4. 9 is connected.

Therefore, even after the flip-chip mounting, the high frequency circuit formed on the chip and the mounting board are electrically isolated by the ground conductor 9, so that the high frequency circuit is not affected by the mounting board. Therefore, it was commonly used.

[0007]

In the structure of the conventional semiconductor device as described above, in the case of the mounting method using the micro bumps, the height of the bumps is only a few μm, which is directly under the multilayer high frequency circuit chip. Since it is difficult to form a circuit on the mounting board of, the control circuit, the IF circuit, and the like had to be formed in another region of the mounting board, which causes a problem that the area of the mounting board becomes large. there were.

On the other hand, when the stud bumps are used, the bump height becomes several tens of μm to hundreds of tens of μm, and a circuit can be formed on the mounting substrate, but since the bump size is large, this is unnecessary inductance. Therefore, there is a problem that the high frequency characteristics are deteriorated.

Further, in the conventional structure, since the ground conductor on the chip exists only on the uppermost layer of the dielectric film, when connecting the FET, the capacitor or the transmission line formed on the semiconductor substrate to the ground conductor, You have to use long through holes,
There is a problem that the high frequency characteristics are deteriorated because the dimension of the through hole becomes an unnecessary inductance.

Particularly, in the millimeter wave band, the influence of the through hole size is large, which is one of the factors that deteriorate the circuit characteristics.
It was one. The present invention is a small-sized high-frequency semiconductor device
The objective is to realize a high-frequency semiconductor device that exhibits high integration and good high-frequency characteristics in the millimeter wave region.

[0011]

According to the present invention, the above-mentioned object is solved by the means described in the claims.

That is, according to the first aspect of the present invention, the dielectric film and the wiring layer are formed in multiple layers on the semiconductor substrate on the mounting substrate formed by forming the dielectric film and the wiring layer in multiple layers on the semiconductor substrate. A multi-layered high-frequency circuit chip having a ground conductor on one surface thereof is flip-chip mounted using bumps so that the ground conductor surface faces the dielectric film on one surface of the mounting substrate. It is a semiconductor device.

According to a second aspect of the present invention, a dielectric film and wiring layers are formed in multiple layers on a semiconductor substrate on a mounting substrate formed by forming dielectric layers and wiring layers in multiple layers on a dielectric substrate. Consists of
A high-frequency semiconductor device in which a multilayered high-frequency circuit chip having a ground conductor on one surface thereof is flip-chip mounted using bumps so that the ground conductor surface faces the dielectric film on one surface of the mounting substrate. .

According to a third aspect of the present invention, in the high frequency semiconductor device according to the first or second aspect, an IF circuit, an A / D conversion circuit, a D / A conversion circuit, a digital circuit and a control are provided on a mounting board. A circuit or the like is formed.

According to a fourth aspect of the present invention, the dielectric film and the wiring layer are formed in multiple layers on a semiconductor substrate, and a mounting substrate having a ground conductor on at least a part of one surface thereof is provided on the semiconductor substrate. A multi-layered high-frequency circuit chip having a dielectric conductor and a wiring layer formed in multiple layers and having a ground conductor on one surface thereof, and the ground conductor surface of the multi-layered high-frequency circuit chip is the same as the ground conductor surface of the mounting substrate. The high-frequency semiconductor device is flip-chip mounted using bumps so as to face each other.

According to a fifth aspect of the present invention, the dielectric film and the wiring layer are formed in multiple layers on the dielectric substrate, and the semiconductor substrate is provided on the mounting substrate having the ground conductor on at least a part of one surface thereof. A multi-layered high-frequency circuit chip having a dielectric film and a wiring layer formed thereon in a multi-layered manner and having a grounding conductor on one surface thereof, wherein the grounded conductor surface of the multi-layered high-frequency circuit chip is It is a high-frequency semiconductor device that is flip-chip mounted using bumps so as to face with.

According to a sixth aspect of the present invention, in the high frequency semiconductor device according to the fourth or fifth aspect, I is mounted on the mounting substrate.
An F circuit, an A / D conversion circuit, a D / A conversion circuit, a digital circuit and a control circuit are formed.

According to a seventh aspect of the present invention, in the high-frequency semiconductor device according to any one of the first to sixth aspects, at least one of the mounting board and the multilayered high-frequency circuit chip mounted on the mounting board is It is configured to have a ground conductor on a plurality of dielectric film surfaces among a plurality of multilayered dielectric films.

In the high frequency semiconductor device of the present invention, by using a substrate formed by laminating dielectric films in multiple layers as a mounting substrate, a control circuit, a digital circuit or the like is mounted on the mounting substrate directly below the high frequency circuit chip. Therefore, the high-frequency semiconductor device can be downsized and highly integrated. Further, in the case where the ground conductor is formed on the uppermost layer of the mounting board, ideal isolation between the high frequency circuit chip and the circuit formed on the mounting board can be realized.

Further, in the case where the grounding conductor is formed on a plurality of dielectric films, the grounding can be performed in the shortest distance regardless of which layer is grounded. Therefore, the through hole does not become unnecessary inductance, and good high frequency characteristics can be maintained even in the millimeter wave region.

[0021]

FIG. 1 shows a first embodiment of the present invention.
It is a figure which shows the high frequency semiconductor device of the example of FIG. In the figure, reference numeral 1 is a mounting substrate, 2 is a high-frequency circuit chip, 3 is a semiconductor substrate, 4 is a bump, 5 is an FET, 6 is a capacitor, 7 is a dielectric film, 8 is a line, and 9 is a line.
Is a ground conductor, 10 is a signal line bump pad, 11 is a through hole, 12 is a control circuit, and 13 is an IF circuit.

The mounting substrate 1 comprises a semiconductor substrate 3, a multi-layered dielectric film formed thereon, and a ground conductor 9 formed on the back surface of the mounting substrate 1. The control circuit 12, the IF circuit 13 and the like are formed on the semiconductor substrate 3 (mounting substrate) by a semiconductor process. The semiconductor substrate 3 (mounting substrate)
A dielectric film is formed in multiple layers on the control circuit 12 and the IF circuit 13 by spin coating or the like, and a plurality of transmission lines and ground conductors are formed on the dielectric film.

Further, a pad for connection with the high frequency circuit chip 2 is formed on the uppermost surface of the dielectric film of the mounting substrate 1, and the multilayer high frequency circuit chip 2 is faced down through the bumps 4 formed on the pad. Connect by structure. The multilayered high-frequency circuit chip 2 has a multilayered dielectric film formed on a semiconductor substrate 3 (high-frequency circuit chip), a ground conductor formed on the uppermost layer surface thereof, and a ground conductor formed on a plurality of dielectric films. Is forming.

In the high frequency semiconductor device configured as described above, a circuit can be formed on the mounting substrate directly below the mounted high frequency circuit chip, and therefore, the high frequency semiconductor device can be made compact and highly integrated. .

Further, since the high-frequency circuit chip 2 has ground conductors formed on a plurality of dielectric films, it can be grounded from any layer in the shortest distance, and the through holes are An unnecessary inductance does not occur, and good high frequency characteristics can be maintained even in the millimeter wave region.

The semiconductor substrate 3 used as the mounting substrate
May be, for example, a ceramic multilayer substrate made of alumina or the like, a multilayer mounting substrate in which a multilayer dielectric film is formed on the ceramic multilayer substrate, or a multilayer printed circuit board such as a glass epoxy multilayer substrate.

FIG. 2 is a diagram showing a high-frequency semiconductor device according to a second example of the embodiment of the present invention and is a sectional view. In the figure, reference numerals are the same as those in FIG. The mounting substrate 1 is composed of a semiconductor substrate 3, a multilayer dielectric film formed thereon, and a ground conductor 9 formed on the back surface of the mounting substrate 1. The control circuit 12, the IF circuit 13 and the like are formed on the semiconductor substrate 3 (mounting substrate) by a semiconductor process.

Dielectric films are formed in multiple layers on the semiconductor substrate 3 (mounting substrate) and the control circuit 12 and the IF circuit 13 by spin coating or the like, and a plurality of transmission lines and ground conductors are formed on the dielectric film. It

Further, a pad for connection with a high frequency circuit chip is formed on the uppermost layer of the dielectric film of the mounting substrate 1, and the multilayer high frequency circuit chip is face-down structure via the bump 4 formed on the pad. Connect with. The multilayered high frequency circuit chip has a multilayered dielectric film formed on a semiconductor substrate 3 (high frequency circuit chip), a ground conductor formed on the uppermost layer thereof, and a ground conductor formed on a plurality of dielectric films. Is forming.

In the high frequency semiconductor device configured as described above, a circuit can be formed on the mounting substrate immediately below the mounted high frequency circuit chip, and therefore, the high frequency semiconductor device can be made compact and highly integrated. . Since the ground conductor is formed in the uppermost layer of the mounting board, ideal isolation between the high frequency circuit chip and the circuit formed on the mounting board can be realized. Therefore, it is possible to prevent deterioration of the high-frequency characteristics even after mounting and realize a high-frequency semiconductor device having good characteristics.

Further, since the ground conductors are formed on the plurality of dielectric films of the high frequency circuit chip and the mounting substrate, the ground can be grounded from any layer in the shortest distance, and the through holes are formed. In addition, it is possible to maintain good high frequency characteristics up to the millimeter wave region without causing unnecessary inductance.

The semiconductor substrate 3 used as the mounting substrate is, for example, a ceramic multilayer substrate such as alumina, a multilayer mounting substrate in which a multilayer dielectric film is formed on the ceramic multilayer substrate, or a glass epoxy type multilayer substrate. It may be a printed circuit board.

FIG. 3 is a view showing a high frequency semiconductor device of a third example of the embodiment of the present invention, and is a sectional view. In the figure, reference numerals are the same as those in FIG. The mounting substrate 1 is composed of a semiconductor substrate 3, a multilayer dielectric film formed thereon, and a ground conductor 9 formed on the back surface of the mounting substrate 1. The control circuit 12, the IF circuit 13 and the like are formed on the semiconductor substrate 3 (mounting substrate) by a semiconductor process.

Dielectric films are formed in multiple layers on the semiconductor substrate 3 (mounting substrate) and the control circuit 12 and the IF circuit 13 by spin coating, and a plurality of transmission lines and ground conductors are formed on the dielectric film. It

Further, a pad for connection to a high frequency circuit chip is formed on the uppermost layer of the dielectric film of the mounting substrate 1, and a plurality of multi-layered high frequency circuit chips 2 are connected through the bumps 4 formed on the pad. Connect with face-down structure. The multilayered high-frequency circuit chip 2 has a multilayered dielectric film formed on a semiconductor substrate 3 (high-frequency circuit chip), a ground conductor formed on the uppermost layer thereof, and a ground conductor formed on a plurality of dielectric films. Is formed.

In the high-frequency semiconductor device configured as described above, a circuit can be formed on the mounting substrate directly below the mounted high-frequency circuit chip, so that the high-frequency semiconductor device can be made compact and highly integrated. . Since the ground conductor is formed in the uppermost layer of the mounting board, ideal isolation between the high frequency circuit chip and the circuit formed on the mounting board can be realized. Therefore, it is possible to prevent deterioration of the high-frequency characteristics even after mounting and realize a high-frequency semiconductor device having good characteristics.

Further, since the grounding conductor is formed on the plurality of dielectric films of the mounting board, the grounding can be performed in the shortest distance regardless of which layer is grounded, and the through hole eliminates unnecessary inductance. It is possible to maintain good high frequency characteristics even in the millimeter wave region.

The semiconductor substrate 3 used as a mounting substrate is, for example, a ceramic multilayer substrate such as alumina, a multilayer mounting substrate in which a multilayer dielectric film is formed on the ceramic multilayer substrate, or a glass epoxy type multilayer substrate. It may be a printed circuit board.

[0039]

As described above, in the high-frequency semiconductor device of the present invention, the control circuit can be formed immediately below the high-frequency circuit chip, so that the device can be made compact and highly integrated. Furthermore, in the configuration in which the ground conductor is provided in a plurality of layers,
Since the isolation of the multilayered high frequency circuit chip and the mounting substrate or the high frequency circuit and the control circuit is ensured, good high frequency characteristics can be obtained even after mounting.

[Brief description of drawings]

FIG. 1 is a diagram showing a first example of an embodiment of the present invention.

FIG. 2 is a diagram showing a second example of the embodiment of the present invention.

FIG. 3 is a diagram showing a third example of an exemplary embodiment of the present invention.

FIG. 4 is a diagram showing an example of a conventional high frequency semiconductor device.

[Explanation of symbols]

 1 Mounting Substrate 2 High Frequency Circuit Chip 3 Semiconductor Substrate 4 Bump 5 FET 6 Capacitance 7 Dielectric Film 8 Transmission Line 9 Grounding Conductor 10 Signal Line Bump Pad 11 Through Horn 12 Control Circuit 13 IF Circuit

Claims (7)

[Claims] 1. A dielectric substrate and a wiring layer are formed in multiple layers on a semiconductor substrate, and a dielectric film and an interconnection layer are formed in multiple layers on the semiconductor substrate. A high-frequency semiconductor device characterized in that a multilayer high-frequency circuit chip having a ground conductor on its surface is flip-chip mounted using bumps so that the ground conductor surface faces the dielectric film on one surface of the mounting substrate. 2. A dielectric substrate and wiring layers are formed in multiple layers on a dielectric substrate, and a dielectric film and wiring layers are formed in multiple layers on a semiconductor substrate. A high-frequency semiconductor device characterized in that a multilayer high-frequency circuit chip having a ground conductor on its surface is flip-chip mounted using bumps so that the ground conductor surface faces the dielectric film on one surface of the mounting substrate. . 3. The high frequency semiconductor device according to claim 1, wherein an IF circuit, an A / D conversion circuit, a D / A conversion circuit, a digital circuit, a control circuit and the like are formed on the mounting substrate. 4. A dielectric substrate and a wiring layer are formed in multiple layers on a semiconductor substrate, a mounting substrate having a ground conductor on at least a part of one surface thereof, and a dielectric film on the semiconductor substrate. A multi-layered high-frequency circuit chip having a wiring conductor formed in multiple layers and having a ground conductor on one surface thereof, so that the ground conductor surface of the multi-layered high-frequency circuit chip faces the ground conductor surface of the mounting board. A high-frequency semiconductor device characterized by being flip-chip mounted using bumps. 5. A dielectric film and a wiring layer are formed in multiple layers on a dielectric substrate, and a dielectric film on a semiconductor substrate on a mounting substrate having a ground conductor on at least a part of one surface thereof. A multi-layered high-frequency circuit chip having a ground conductor on one surface thereof, and the ground conductor surface of the multi-layered high-frequency circuit chip faces the ground conductor surface of the mounting board. A high-frequency semiconductor device characterized by being flip-chip mounted using bumps. 6. The high frequency semiconductor device according to claim 4, wherein an IF circuit, an A / D conversion circuit, a D / A conversion circuit, a digital circuit, a control circuit and the like are formed on the mounting substrate. 7. The mounting substrate and at least one of the multilayered high frequency circuit chip mounted thereon has a ground conductor on a plurality of dielectric film surfaces of a plurality of multilayered dielectric films. The high frequency semiconductor device according to claim 1.