JPH09275080A - Laser annealing equipment - Google Patents

Abstract

(57) Abstract: A laser annealing apparatus capable of improving throughput is provided. A cassette (3) in a substrate loading chamber (3)
One of the unprocessed substrates M from A is transferred by the transfer robot 4A.
The substrate holding device 5
Let B hold it. After the substrate to be processed M is preheated by the preheating heater 5A, the substrate to be processed M is placed on the XY table 6A. The XY table 6A moves while keeping the temperature of the substrate M to be processed by the heater 6B for keeping heat, and scans the entire surface of the amorphous semiconductor thin film of the substrate M to be processed by the laser irradiation portion P having a small area. After that, the substrate M to be processed is set to X.
The Y table 6A is transferred to the substrate holding device 7B and cooled by the cooling device 7A. Next, the transfer robot 18A transfers the substrate to the cassette 9A in the substrate take-out chamber 9. [Effect] Since the number of times of transportation and the number of times of delivery can be reduced, the processing time can be shortened as a whole, and the throughput can be improved.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laser annealing treatment apparatus, and more particularly to a laser annealing treatment apparatus improved to improve throughput. In particular, it is useful for forming a large grain polycrystalline silicon thin film.

[0002]

2. Description of the Related Art A laser annealing apparatus is an apparatus for crystallizing an amorphous semiconductor thin film by irradiating an amorphous thin film formed on an insulating substrate with laser light to perform an annealing treatment. This type of laser annealing apparatus is used, for example, in a manufacturing process of an active matrix type liquid crystal display.

FIG. 5 is a plan view showing an example of a conventional laser annealing apparatus. FIG. 6 is a vertical cross-sectional view showing the main part of the laser annealing apparatus of FIG. The laser annealing apparatus 500 includes an excimer laser generator 21, an optical system 22, a substrate loading chamber 3,
The transfer chamber 54, the preheating chamber 55, the annealing chamber 51, the transfer chamber 8, the cooling chamber 57, and the substrate take-out chamber 9 are provided. Gate valves G1, G15, G2, G3, G4, and G5 are provided at the connecting portions of the chambers, respectively. Although not shown, each chamber is provided with a gas supply device and a vacuum exhaust device. The reason why the chamber is configured in this manner is to prevent particles and the like from adhering to the substrate S to be processed and to change the atmosphere (nitrogen atmosphere, vacuum atmosphere, etc.) in each chamber.

The optical system 22 is an optical system for irradiating the substrate S with the laser light R, and is composed of a reflection mirror and a beam homogenizer (uniform optical system) not shown. In the substrate loading chamber 3, a cassette 3A capable of accommodating a large number of substrates S to be processed at once is arranged. In the transfer chamber 54, a transfer robot 54A that can transfer the substrate S to be processed among the substrate loading chamber 3, the preheating chamber 55, and the annealing chamber 51 is provided. A preheating heater 55A for preheating the substrate S to be processed and a substrate holding device 55B are provided in the preheating chamber 55.

In the annealing chamber 51, the base B
An XY table 56A that slides up and can move in the X and Y directions is provided. This XY table 56A
Has a built-in heater 56B for heat retention. Further, on the upper wall surface of the annealing chamber 51, a laser introduction window 5
6C is provided.

In the transfer chamber 8, there is provided a transfer robot 8A capable of transferring the substrate S to be processed among the annealing chamber 51, the cooling chamber 7 and the substrate taking-out chamber 9. Inside the cooling chamber 57, a cooling device 57A and a substrate holding device 57B for cooling the substrate S to be processed after the annealing treatment are provided. In the substrate take-out chamber 9, there is provided a cassette 9A capable of accommodating a large number of substrates S to be processed at one time.

As shown in FIG. 6, the substrate S to be processed is
The amorphous thin film S1 is formed on the insulating substrate S2.

Next, the above laser annealing apparatus 5
00 will be described. (1) A large number of unprocessed substrates S are stored in the cassette 3A in the substrate loading chamber 3. (2) The gate valve G1 is opened, the transfer robot 54A takes in one substrate S to be processed from the cassette 3A, and the gate valve G1 is closed.

(3) The gate valve G15 is opened, the substrate S to be processed taken in by the transfer robot 54A is transferred into the preheating chamber 55, held by the substrate holding device 55B, and the gate valve G15 is closed. (4) The preheating heater 55A preheats the substrate S to be processed to a temperature of about 300 to 400 ° C. By preheating, a polycrystalline thin film with large crystal grains can be obtained even with a short annealing time. (5) The gate valve G15 is opened, the preheated substrate S to be processed is taken into the transfer robot 54A, and the gate valve G15 is closed. (6) The gate valve G2 is opened, the substrate S to be processed taken in by the transfer robot 54A is transferred into the annealing chamber 51, placed on the XY table 56A, and the gate valve G2 is closed.

(7) The XY table 56A keeps the substrate S to be processed at a temperature of about 300 to 400 ° C. by the heat retention heater 56B. In addition, the XY table 56A moves so that the substrate S to be processed is located immediately below the laser introducing window 56C. The laser light R is introduced into the annealing chamber 51 through the laser introduction window 56C and is applied to the surface of the substrate S to be processed. XY table 56 in this state
A is moved in the X and Y directions, and a small area (for example, 0.
The entire surface of the amorphous semiconductor thin film S1 of the substrate S to be processed (for example, 300 mm) at the laser irradiation portion P of 4 mm × 150 mm.
mm × 300 mm). As a result, the amorphous semiconductor thin film S1 can be crystallized.

(8) The gate valve G3 is opened, the annealed substrate S to be processed is taken into the transfer robot 8A from the XY table 56A, and the gate valve G3 is closed. (9) The gate valve G4 is opened, the target substrate S taken in by the transfer robot 8A is transferred into the cooling chamber 57, and is held by the substrate holding device 57B.
Close. (10) The cooling device 57A cools the substrate S to be processed until the temperature decreases to a temperature near room temperature (generally 100 ° C. or lower).

(11) The gate valve G4 is opened, the cooled substrate S to be processed is taken into the transfer robot 8A, and the gate valve G4 is closed. (12) The gate valve G5 is opened, and the substrate S to be processed that has been taken in by the transfer robot 8A is taken out from the chamber 9 for taking out the substrate.
It is transported to the inside and stored in the cassette 9A, and the gate valve G5
Close. (13) The above processes (2) to (12) are repeated until there is no unprocessed substrate S in the cassette 3A. (14) The substrate S to be processed is taken out from the cassette 9A and the processing is completed.

[0013]

The conventional laser annealing apparatus 500 has the following problems. (1) The substrate S to be processed is the substrate loading chamber 3 → transfer chamber 54 → preheating chamber 55 → transfer chamber 54 → annealing chamber 51 → transfer chamber 8
The substrate to be processed S is transferred in the order of → cooling chamber 57 → transfer chamber 8 → chamber 9 for taking out the substrate.
The number of transports and the number of deliveries are large, the overall processing time is long, and the throughput is reduced. (2) Even if the substrate S to be processed is preheated in the preheating chamber 55, the substrate temperature is lowered during the transfer to the annealing chamber 51, and the substrate is heated by the heat retention heater 56B until it becomes a temperature convenient for crystal thin film formation. I have to fix it,
The processing time is long and the throughput is low. Also, the energy efficiency is poor. (3) When the substrate S to be processed is transferred from the preheating chamber 55 to the annealing chamber 51, the transfer robot 54A
Is a preheating heater 55A and a warming heater 56B
Since it is continuously exposed to the heat of, the temperature tends to rise. Further, the transport robot 8A is also exposed to the heat of the heat retention heater 56B every time, so that the transport robot 8A is likely to reach a high temperature. Since it is necessary to prevent this, the continuous processing speed and continuous operation time are limited, and the throughput is reduced. It should be noted that when the temperature of the transfer robot 54A becomes high, the movement accuracy is lowered and the life is shortened. Therefore, it is an object of the present invention to provide a laser annealing treatment apparatus improved so as to improve the throughput.

[0014]

According to the first aspect, the object to be processed (S) placed in the annealing chamber (1) is irradiated with a laser beam (R) from the outside through a laser introducing window (6C). In the laser annealing processing device,
A preheating heater (5A) is provided in the annealing chamber (1), and the object (S) to be processed before being irradiated with the laser beam (R) is preheated in the annealing chamber (1). Laser annealing treatment equipment (1
00) is provided. In the laser annealing apparatus (100) according to the first aspect, the annealing is performed by preheating with the preheating heater (5A) only within the annealing chamber (1) and then irradiating with the laser beam (R). Will be able to. Therefore, it is not necessary to exchange the object to be processed (S) with the preheating chamber, and the number of times the object to be processed (S) is conveyed and the number of times of delivery can be reduced. As a result, the processing time can be shortened as a whole, and the throughput can be improved. In addition, since there is no temperature drop during conveyance after preheating, there is no need to reheat, and in this respect also throughput can be improved. In addition, energy efficiency can be improved. Furthermore, the transfer robot (4
Since A) is not continuously exposed to the heat of the preheating heater (5A) and the heat retention heater (6B), it is unlikely that the temperature becomes high, and the continuous processing speed and continuous operation time are not limited. Therefore, also in this respect, the throughput can be improved.

In a second aspect, the present invention is a laser annealing in which an object to be processed (S) placed in an annealing chamber (11) is irradiated with laser light (R) from outside through a laser introducing window (6C). In the processing apparatus, a pre-heating heater (5A) for pre-heating the object (S) before being irradiated with the laser light (R), and the laser light (R)
And a cooling means (7A) for cooling the object (S) to be processed after the irradiation of the laser annealing device (2).
00) is provided. In the laser annealing apparatus (200) of the second aspect, the annealing chamber (11)
It is possible to complete a series of treatments in which, after being preheated by the preheating heater (5A), an annealing treatment is performed by irradiating the laser light (R) and then cooled by the cooling means (7A). Therefore, it is not necessary to exchange the object to be processed (S) with the preheating chamber, the cooling chamber, or the like, and the number of times the object to be processed (S) is conveyed and the number of times of delivery can be reduced. As a result, the processing time can be further shortened as a whole, and the throughput can be further improved. In addition, since there is no temperature drop during conveyance after preheating, there is no need to reheat, and in this respect also throughput can be improved. In addition, energy efficiency can be improved. Furthermore, since the transfer robot (4A) does not continuously hit the heat of the preheating heater (5A) and the heat retention heater (6B), it is hard to reach a high temperature,
Continuous processing speed and continuous operation time are not limited. Therefore,
Also in this respect, the throughput can be improved.

[0016] In a third aspect, the present invention is the table (6A) on which the object to be processed (S) is placed in the above structure.
Further, there is provided a laser annealing treatment apparatus (100, 200), characterized in that a heat retaining heater (6B) for keeping the temperature of the preheated object (S) is incorporated. The laser annealing apparatus of the third aspect (10
0,200), the preheated object (S) can be kept at a temperature convenient for forming a crystal thin film by the heat retention heater (6B).

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in more detail with reference to the embodiments shown in the drawings. Note that the present invention is not limited by this.

[First Embodiment] FIG. 1 is a plan view showing a laser annealing apparatus according to a first embodiment of the present invention. FIG. 2 is a vertical cross-sectional view of the main part of the laser annealing apparatus of FIG. This laser annealing apparatus 100 includes an excimer laser generator 21, an optical system 22, and a substrate loading chamber 3
The transfer chamber 4, the annealing chamber 1, the transfer chamber 8, the cooling chamber 7, and the substrate take-out chamber 9 are provided. Gate valves G1, G2, G3 and G are provided at the connecting portions of the chambers, respectively.
4, G5 are provided. Also, although not shown,
Each chamber is equipped with a gas supply device and a vacuum exhaust device. The reason why the chamber is configured in this manner is to prevent particles and the like from adhering to the substrate S to be processed and to change the atmosphere (nitrogen atmosphere, vacuum atmosphere, etc.) in each chamber.

The optical system 22 is an optical system for irradiating the substrate S with the laser beam R, and is composed of a reflection mirror and a beam homogenizer (uniform optical system) not shown. In the substrate loading chamber 3, a cassette 3A capable of accommodating a large number of substrates S to be processed at once is arranged. In the transfer chamber 4, a transfer robot 4 </ b> A that can transfer the substrate S to be processed between the substrate loading chamber 3 and the annealing chamber 1 is provided.

The annealing chamber 1 is provided with a preheating heater 5A and a substrate holding device 5B. Further, an XY table 6A that slides on the base B and can move in the X and Y directions is provided. This XY
The table 6A has a built-in heater 6B for heat retention.
A laser introducing window 6C is provided on the upper wall surface of the annealing chamber 1.

In the transfer chamber 8, there is provided a transfer robot 8A which can transfer the substrate S to be processed among the annealing chamber 1, the cooling chamber 7 and the substrate taking-out chamber 9. Inside the cooling chamber 7, a cooling device 7A and a substrate holding device 7B for cooling the substrate S to be processed after the annealing treatment are provided.
In the substrate take-out chamber 9, there is provided a cassette 9A capable of accommodating a large number of substrates S to be processed at one time.

As shown in FIG. 2, the substrate S to be processed has an amorphous thin film S1 formed on an insulating substrate S2 (eg glass substrate).

Next, the laser annealing apparatus 10
The operation of 0 will be described. (1) A large number of unprocessed substrates S are stored in the cassette 3A in the substrate loading chamber 3. (2) The gate valve G1 is opened, the transfer robot 4A takes in one substrate S to be processed from the cassette 3A, and the gate valve G1 is closed.

(3) The gate valve G2 is opened, the substrate S to be processed taken in by the transfer robot 4A is transferred into the annealing chamber 1, held by the substrate holding device 5B, and the gate valve G2 is closed. (4) The substrate S to be processed is
Preheat to a temperature of about 300 to 400 ° C. By preheating, a polycrystalline thin film with large crystal grains can be obtained even with a short annealing time. (5) The preheated substrate S to be processed is placed on the XY table 6A.
Place on top. (6) The XY table 6A keeps the substrate S to be processed at a temperature of about 300 to 400 ° C. by the heater 6B for heat retention. In addition, the XY table 6A moves so that the substrate S to be processed is located immediately below the laser introducing window 6C. The laser light R is introduced into the annealing chamber 1 through the laser introducing window 6C and is irradiated on the surface of the substrate S to be processed.
In this state, the XY table 6A is moved in the X direction and the Y direction, and the entire surface of the amorphous semiconductor thin film S1 (for example, 300 mm ×) of the substrate S to be processed is irradiated with the laser irradiation portion P having a small area (for example, 0.4 mm × 150 mm). 300 mm) is scanned. As a result, the amorphous semiconductor thin film S1 can be crystallized.

(7) The gate valve G3 is opened, the substrate S to be annealed is taken in from the XY table 6A to the transfer robot 8A, and the gate valve G3 is closed. (8) The gate valve G4 is opened, and the substrate S to be processed taken in by the transfer robot 8A is transferred into the cooling chamber 7,
The substrate is held by the substrate holding device 7B, and the gate valve G4 is closed. (9) The cooling device 7A cools the substrate S to be processed until it falls to a temperature close to room temperature (generally 100 ° C. or lower).

(10) The gate valve G4 is opened, the cooled substrate S to be processed is taken into the transfer robot 8A, and the gate valve G4 is closed. (11) The gate valve G5 is opened, and the target substrate S taken in by the transfer robot 8A is taken out from the substrate taking chamber 9
It is transported to the inside and stored in the cassette 9A, and the gate valve G5
Close. (12) The above processes (2) to (11) are repeated until there is no unprocessed substrate S in the cassette 3A. (13) The substrate S to be processed is taken out from the cassette 9A, and the processing is completed.

According to the laser annealing apparatus 100 of the first embodiment described above, preheating can be performed in the annealing chamber 1, so that the preheating chamber becomes unnecessary,
The number of times of conveyance and the number of times of delivery can be reduced, and the throughput can be improved. In addition, since there is no temperature drop during conveyance after preheating, there is no need to reheat, and in this respect also throughput can be improved. In addition, energy efficiency can be improved.
Further, since the transfer robot 4A does not continuously hit the heat of the preheating heater 5A and the heat retention heater 6B, the temperature does not easily become high, and the continuous processing speed and continuous operation time are not limited. Therefore, the throughput can be improved.

-Second Embodiment- FIG. 3 is a plan view showing a laser annealing apparatus according to a second embodiment of the present invention. FIG. 4 is a vertical cross-sectional view of the main part of the laser annealing processing apparatus of FIG. This laser annealing apparatus 200 includes an excimer laser generator 21, an optical system 22, and a substrate loading chamber 3
A transfer chamber 4, an annealing chamber 11,
A transfer chamber 18 and a substrate take-out chamber 9 are provided. Gate valves G1, G2, G3, and G5 are provided at the connecting portions of the chambers, respectively. Although not shown, each chamber is provided with a gas supply device and a vacuum exhaust device.

The optical system 22 is an optical system for irradiating the substrate S with the laser beam R, and is composed of a reflection mirror and a beam homogenizer (uniform optical system) not shown. In the substrate loading chamber 3, a cassette 3A capable of accommodating a large number of substrates S to be processed at once is arranged. In the transfer chamber 4, the substrate S to be processed is placed in the substrate loading chamber 3 and the annealing chamber 1.
A transport robot 4A capable of transporting between 1 is provided.

The annealing chamber 11 is provided with a preheating heater 5A and a substrate holding device 5B. Further, an XY table 6A that slides on the base B and can move in the X and Y directions is provided. This XY
The table 6A has a built-in heater 6B for heat retention.
Further, a substrate cooling device 7A and a substrate holding device 7B are provided. A laser introducing window 6C is provided on the upper wall surface of the annealing chamber 1.

Inside the transfer chamber 18, there is provided a transfer robot 18A capable of transferring the substrate S to be processed between the annealing chamber 11 and the substrate removing chamber 9. In the substrate take-out chamber 9,
A cassette 9A capable of accommodating a large number of substrates S to be processed at one time is provided.

Next, this laser annealing apparatus 20
The operation of 0 will be described. (1) A large number of unprocessed substrates S are stored in the cassette 3A in the substrate loading chamber 3. (2) The gate valve G1 is opened, the transfer robot 4A takes in one substrate S to be processed from the cassette 3A, and the gate valve G1 is closed.

(3) The gate valve G2 is opened, the substrate S to be processed taken in by the transfer robot 4A is transferred into the annealing chamber 11 and held by the substrate holding device 5B, and the gate valve G2 is closed. (4) The substrate S to be processed is
Preheat to a temperature of about 300 to 400 ° C. By preheating, a polycrystalline thin film with large crystal grains can be obtained even with a short annealing time. (5) The preheated substrate S to be processed is placed on the XY table 6A.
Place on top. (6) The XY table 6A keeps the substrate S to be processed at a temperature of about 300 to 400 ° C. by the heater 6B for heat retention. In addition, the XY table 6A moves so that the substrate S to be processed is located immediately below the laser introducing window 6C. The laser light R is introduced into the annealing chamber 11 through the laser introduction window 6C and is irradiated on the surface of the substrate S to be processed. In this state, the XY table 6A is moved in the X direction and the Y direction, and the entire surface of the amorphous semiconductor thin film S1 (for example, 300 mm ×) of the substrate S to be processed is irradiated with the laser irradiation portion P having a small area (for example, 0.4 mm × 150 mm). 300 mm) is scanned. As a result, the amorphous semiconductor thin film S1 can be crystallized.

(7) The substrate S to be annealed is X
The Y table 6A is transferred to the substrate holding device 7B and held. (8) The cooling device 7A cools the substrate S to be processed until the temperature decreases to a temperature near room temperature (generally 100 ° C. or lower).

(9) The gate valve G3 is opened, the cooled substrate S to be processed is taken into the transfer robot 18A, and the gate valve G3 is closed. (10) Open the gate valve G5 and transfer robot 18A
The substrate S to be processed taken in is transferred into the substrate taking-out chamber 9 and is housed in the cassette 9A, and the gate valve G
Close 5. (11) The above processes (2) to (10) are repeated until there is no unprocessed substrate S in the cassette 3A. (12) The substrate S to be processed is taken out from the cassette 9A and the processing is completed.

According to the laser annealing apparatus 200 of the second embodiment, since the preheating and cooling can be performed in the annealing chamber 11, the preheating chamber and the cooling chamber are not required, and the number of times of transportation and the number of times of delivery are reduced. Therefore, the throughput can be further improved.
In addition, since there is no temperature drop during conveyance after preheating, there is no need to reheat, and in this respect also throughput can be improved. In addition, energy efficiency can be improved. Furthermore, the transfer robot 4A does not continuously hit the heat of the preheating heater 5A and the heat retention heater 6B, and the temperature does not easily become high. Further, the transfer robot 18A is never exposed to heat from the heat retention heater 6B and the like, and is unlikely to reach a high temperature. Therefore, continuous processing speed and continuous operation time are not limited. Therefore, the throughput can be improved.

In the first and second embodiments described above, the entire surface of the amorphous semiconductor thin film S1 is scanned by moving the XY table 6A in the X and Y directions, but instead of this, the table is The laser irradiation portion P may be fixed and moved for scanning.

[0038]

According to the laser annealing apparatus of the present invention, the following effects can be obtained. (1) Since the preheating heater is provided in the annealing chamber, the preheating chamber is not required and the number of times of transportation and the number of times of delivery can be reduced, so that the processing time can be shortened as a whole and the throughput can be improved. In addition, equipment costs can be reduced. Further, the occupied space is small. (2) Since there is no temperature drop during conveyance after preheating, there is no need to reheat, and in this respect also throughput can be improved. In addition, energy efficiency can be improved. (3) Since the transfer robot can reduce the frequency of hitting the heat of the preheating heater and the heat retention heater, the temperature does not easily become high, and the continuous processing speed and continuous operation time are not limited.
Therefore, the throughput can be improved. (4) When the cooling means is provided in the annealing chamber, the cooling chamber is not required and the number of times of transportation and the number of times of delivery can be reduced, so that the processing time can be shortened as a whole and the throughput can be further improved. Also,
Equipment costs can be reduced. Further, the occupied space is small.

[Brief description of drawings]

FIG. 1 is a plan view showing a laser annealing processing apparatus according to a first embodiment of the present invention.

FIG. 2 is a vertical sectional view showing a main part of the laser annealing apparatus of FIG.

FIG. 3 is a plan view showing a laser annealing apparatus according to a second embodiment of the present invention.

FIG. 4 is a vertical sectional view showing a main part of the laser annealing apparatus of FIG.

FIG. 5 is a plan view showing an example of a conventional laser annealing apparatus.

6 is a vertical cross-sectional view showing the main parts of the laser annealing apparatus of FIG.

[Explanation of symbols]

100, 200, 500 Laser annealing apparatus 1, 11, 51 Annealing chamber 3 Substrate loading chamber 3A, 9A Cassette 4,54 Transfer chamber 4A, 8A, 18A, 54A Transfer robot 5A, 55A Preheat heater 5B, 7B, 55B, 57B Substrate holding device 6A XY table 6B Heat retention heater 7,57 Cooling chamber 7B, 57B Cooling device 8,18 Transfer chamber 21 Excimer laser generator 22 Optical system 55 Preheating chamber S Target substrate R Laser light G1 to G5, G15 Gate valve

Claims (3)

[Claims] 1. A laser annealing treatment device for irradiating an object to be treated (S) placed in an annealing chamber (1) with a laser beam (R) from the outside through a laser introduction window (6C). 1) A laser annealing treatment apparatus, characterized in that a preheating heater (5A) is provided in the annealing chamber (1) to preheat an object to be treated (S) before being irradiated with laser light (R). (1
00). 2. A window (6C) for introducing a laser from the outside into the object (S) placed in the annealing chamber (11).
In the laser annealing treatment device for irradiating the laser beam (R) through the preheater (5A) for preheating the object (S) to be processed before irradiating the laser beam (R), and the laser beam (R) And a cooling means (7A) for cooling the object (S) to be processed after irradiating the annealing chamber (1
1) A laser annealing treatment device (200) provided in the inside. 3. The laser annealing apparatus according to claim 1 or 2, wherein the temperature of the preheated object (S) is kept on a table (6A) on which the object (S) is placed. Laser annealing apparatus (1) characterized by having a built-in heat-retaining heater (6B) for
00, 200).