JPH09244255A - Exposure device for liquid crystal - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an exposure device for liquid crystals characterized by a small size, lightweightness, low cost, high resolution and wide field. SOLUTION: A front stage MLA(microlens array) 10 is arranged behind a mask 1 recorded with patterns to be transferred to a wafer 2, by which inverted and unmagnified pattern images 3 are formed at every area rotated by 180 deg.C with each arranging area of this front stage MLA 10. A rear stage MLA 15 consisting of the same arrangement as the arrangement of the front stage (microlens array) 10 is arranged behind these inverted and unmagnified pattern images 3 of every area, by which erecting unmagnified images 4 of partial patterns are formed on the wafer 2. The mask 1 and the wafer 2 as well as the front stage and rear stage MLAs 10, 15 are scanned relatively toward the row direction x of the patterns 1a, by which the patterns 1a are transferred onto the wafer 2.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal exposure apparatus.

[0002]

2. Description of the Related Art As a prior art of a liquid crystal exposure apparatus which requires a wide exposure area, a proximity type has been commercialized. In this technique, as shown in FIG. 13, the mask 1 and the wafer 2 are brought into close contact with each other at a minute interval, and the pattern recorded on the mask 1 is magnified at the same rate as the resist 2a on the wafer 2.
Is transferred to According to this technique, a wide exposure area having the same size as the mask 1 can be secured, but the adhesion between the mask 1 and the wafer 2 is limited.

In addition to the above-mentioned conventional example, there is also an apparatus of a type in which a pattern on a mask is projected on a wafer by an image forming system of the same size and the exposure area is expanded by scanning. For example,
There are Offner type, Dyson type, and Double Dyson type. The Offner type uses a catadioptric imaging system, and the Dyson type and the double Dyson type use a catadioptric imaging system. For example, FIG. 14 shows an Offner type apparatus, in which the mask 1 is irradiated with linear illumination light, the light from the mask 1 is bent by a mirror 50, reflected by a concave mirror 51 and a convex mirror 52, and then bent again by a mirror 53. An image is formed on the wafer 2 and the mask 1 and the wafer 2 and the image forming optical system are moved relatively to each other to perform scanning so as to cover the entire area of the pattern on the mask 1. The effective diameter of the optical element of these imaging systems was as large as several hundreds of millimeters. Also, the optical system had only one optical axis.

[0004]

In the proximity type apparatus, the adhesion between the mask 1 and the wafer 2 is low, and the line width is widened by diffraction, so that a high resolution cannot be obtained. Further, in the unity-magnification imaging scan type apparatus, although a high resolution can be obtained by the imaging system, the imaging system is large and expensive. Further, due to the aberration of the image forming system, there is a limit to widening the exposure area. That is, with the conventional technology, it was not possible to construct a small-sized, lightweight, low-cost, high-resolution, wide-field liquid crystal exposure apparatus. Therefore, the present invention is
An object is to provide a light-weight, low-cost, high-resolution, wide-field liquid crystal exposure apparatus.

[0005]

The present invention solves the above problems by using a micro lens array (hereinafter referred to as MLA) as an imaging element. MLA is an imaging element in which a large number of element lenses are two-dimensionally arranged. That is, according to the present invention, by arranging the front stage MLA covering the pattern column direction behind the mask on which the pattern to be transferred onto the wafer is recorded, each region rotated by 180 ° for each array region of the front stage MLA. By forming an inverted equal-magnification partial pattern image and arranging a rear stage MLA having the same arrangement as that of the preceding stage MLA behind the inverted equal-magnification partial pattern image for each area, the partial pattern is corrected on the wafer. By forming an isometric image and relatively scanning the mask and the wafer and the front and rear MLAs in the row direction of the pattern,
It is a liquid crystal exposure device that transfers a pattern onto a wafer.

The principle of the present invention will be described with reference to FIG. In the same figure, an erecting mask image of equal magnification is made by the synthetic image forming system by MLA, and the case where there are five MLA element lenses is shown. First, an inverted 1 × image of the mask 1 is created by the front stage MLA 10. This inverted equal-magnification image is xy that is orthogonal to the optical axis z for each array area of the front stage MLA 10.
Inverted equal-magnification image 3 for each area rotated 180 ° in the plane. The inverted equal-magnification image 3 for each area is converted into an equal-magnification erect image 4 for each area by the rear stage MLA 15 having the same arrangement as the arrangement of the preceding stage MLA 10.
The wafer 2 is placed at the position.

As shown in the figure, in the image formation by both MLAs 10 and 15, an optical axis z exists for each of the element lenses 10a and 15a constituting each MLA. Therefore, the regions of the inverted equal-magnification image 3 and the erecting equal-magnification image 4 for each region, that is, the fields of view are different for each element lens 10a and 15a, but by forming the erect image 4 by both MLAs 10 and 15, The image areas of the respective element lenses 10a and 15a are combined in a matched manner to obtain a wide field as a whole. In order to limit the areas of the inverted equal-magnification image 3 and the erecting equal-magnification image 4 for each area, it is preferable to arrange aperture arrays 5a and 5b as shown in FIG.

A wider exposure area can be obtained by using both MLAs 10 and 15 and scanning in combination. FIG.
Is the entire exposure region, that is, the pattern region 1 in the column direction y of the row direction x and the column direction y of the pattern region 1a.
This shows a method of exposing the entire pattern area 1a by scanning using MLAs 10 and 15 which cover the area a but have an exposure area narrower than the pattern area 1a in the row direction x. By scanning the mask 1 and the wafer 2 simultaneously in the x-minus direction in the arrangement shown in FIG.
Partial pattern image 4a of pattern area 1a on mask 1
Are sequentially transferred to the wafer 2, and finally the entire area 1
a can be transferred to the wafer 2.

However, the numerical aperture of the MLA can be manufactured up to about 0.5, so that high resolution imaging can be performed. Further, the image formation of the MLA is performed for each element lens, and the field in charge of each element lens is as small as the size of the element lens (about several hundreds μm). Therefore, the aberration generated in the element lens is extremely small. Therefore, as long as the number of element lenses is increased, a wide exposure field can be easily obtained without causing deterioration of aberration. Further, by using a scanning optical system, a wider exposure area can be obtained.

As the method for manufacturing MLA, a mask is provided on a glass substrate to form a distributed refractive lens array by ion exchange, a method of coating a glass substrate with a photoresist or the like for etching or heat melting, and a binary optical element. Fresnel lenses and the like are known, and these are lower in cost than the conventional image forming system. Therefore, by using such an MLA, a small-sized, lightweight, and inexpensive liquid crystal exposure apparatus can be configured.

As described above, in the present invention, the mask in which the erect pattern is recorded is used, and the front area MLA and the rear area MLA that cover the entire area in the column direction of the pattern but do not cover the area in the row direction are used. It is configured to scan. In this configuration, scanning in the row direction only needs to cover the entire area of the pattern. Therefore, the front stage MLA and the rear stage MLA do not need to be continuously arranged in the column direction, that is, the front stage MLA and the rear stage MLA.
And a plurality of front stage parts MLA and rear stage parts ML, respectively.
It can be decomposed into A and A. Even if there is a gap between the image areas, the gap in the row direction is naturally filled by the scanning in the row direction, and the gap in the column direction can also be filled by the scanning. The image area is therefore
It is not always necessary to arrange them continuously in a plane, that is, they can be arranged discretely in a plane. As a configuration in which the image areas are discretely arranged in a plane, the image areas viewed from the row direction may be completely separated in the column direction and may simply be in line contact in the column direction. However, it is more preferable to arrange the image areas viewed from the row direction so as to overlap in the column direction. Further, it is preferable that the integrated exposure amount by scanning is uniform in the column direction.

In the case where the image areas are arranged discretely, it is also possible to carry out Koehler illumination on the area covering the entire conjugate area on the mask with respect to the image area. However, it is preferable to illuminate only the discrete conjugate areas on the mask for the discrete image areas discretely and uniformly within the discrete conjugate areas because stray light is prevented. Further, when illuminating only the discrete conjugate area, the discrete illumination light diaphragm array can be arranged in close contact with the mask, but it is more preferable to illuminate the mask by imaging the discrete illumination light diaphragm array. preferable.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 3 shows an embodiment of a scan type liquid crystal exposure apparatus using an MLA. The light source 6, the illumination optical system 7, and the imaging optical system 8 by MLA are relatively aligned and fixed. The mask 1 and the wafer 2 are
Movable stage 1 that can move in the x, y, and z directions, respectively
It is held by b and 2b. Each movable stage 1
An interferometer (not shown) is provided on each of the moving axes b and 2b.
Is installed so that the positions of the mask 1 and the wafer 2 can be measured. The light source 6 is a high-pressure mercury lamp, and the illumination optical system 7 shapes the light from the light source 6 to illuminate the mask 1. The wavelength used is the g-line (436 nm).
The mask pattern 1a is formed on the wafer 2 by the imaging optical system 8.
It is formed as an erect image of the same size on the top. The pattern area 1a of the mask 1 is 300 mm × 200 mm,
The side of mm is the x-axis and the side of 200 mm is the y-axis.

The distance between the mask 1 and the image forming optical system 8 and the distance between the wafer 2 and the image forming optical system 8 are both 70 at the image plane position.
It is set to 0 μm. A plurality of gap sensors 1c and 2c are arranged around the image forming optical system 8, and the gap between the mask 1 and the image forming optical system 8 during scanning and the gap between the wafer 2 and the image forming optical system 8 are set. Feedback is provided to a z-axis movement motor (not shown) so as to be kept accurate. The aperture of the imaging optical system 8 has a rectangular shape of 110.8 mm × 201.81 mm as shown in FIG. 4, and its long side is aligned in the y-axis direction. In this arrangement, the mask 1 and the wafer 2 are interlocked and scanned at a constant speed in the x direction, whereby the entire pattern 1a on the mask 1 can be transferred onto the wafer 2. The details of the scan will be described later.

Next, details of the image forming optical system 8 will be described. FIG. 4 shows the structure of the imaging optical system 8 viewed from the z-axis direction. The entire imaging optical system 8 is composed of four partial imaging optical systems 8a.
It is constituted by. The aperture of one partial imaging optical system 8a is 50.4 mm × 50.61 mm, and each is arranged in a zigzag direction in the y direction as shown in FIG. The imaging optical system 8 is configured. The four partial imaging optical systems 8a are arranged so that their openings overlap each other at the boundary in the y direction, and thus the total opening is 11
It is 0.8 mm × 201.81 mm.

FIG. 5 shows the structure of the partial image forming optical system 8a viewed from the x direction. As shown in the figure, each partial imaging optical system 8
a is four flat plates MLA11,12,16,17 and 2
It is composed of one aperture stop array 20, 21 and one field stop array 22. These elements are mask 1
From the first side toward the wafer 2 side, the front stage first flat plate MLA11,
The front-stage aperture stop array 20, the front-stage second flat plate MLA 12, the field stop array 22, the rear-stage first flat plate MLA 16, the rear-stage aperture stop array 21, and the rear-stage second flat plate MLA 17 are arranged in this order. The front-stage first flat plate MLA11 and the rear-stage first flat plate MLA16 are arranged with the substrate surface facing the wafer 1, and the front-stage second flat plate MLA12 and the rear-stage second flat plate MLA1 are arranged.
7 is arranged with the back surface of the substrate facing the wafer 1.

The thickness t of each flat plate MLA 11, 12, 16, 17 is t = 0.9 mm, the back focus f ₁ from the substrate surface to the front side focal position is f ₁ = 700 μm, and the back focus from the substrate back surface to the rear surface side focal position. Back focus f ₂ is f ₂ =
200 μm. The thicknesses of the aperture stop arrays 20 and 21 and the field stop array 22 are both 20 μm. Mask 1, front aperture stop array 20, field stop array 2
2. The rear aperture stop array 21 and the wafer 2 are positioned by the spacer 23 so as to be positioned at the front side back focus f ₁ or the back side back focus f ₂ of the corresponding flat plate MLA 11, 12, 16, 17, respectively. And is incorporated in the metal holder 24. Further, the openings of the respective elements are aligned with each other also in the xy directions.

In this arrangement, an inverted intermediate image is formed for each area by the front stage MLA10 composed of the front stage first flat plate MLA11 and the front stage second flat plate MLA12, which is composed of the rear stage first flat plate MLA16 and the rear stage second flat plate MLA17. By forming an image again in the latter stage MLA15, an erect image of the same size is obtained. This arrangement is a telecentric imaging system.

FIG. 6 shows each flat plate MLA11 seen from the z direction.
The structure of 12, 16, 17 is shown. However, the number of element lenses 11a, 12a, 16a, 17a of each flat plate MLA is not actual as described below. When h = 70 μm, the diameter of the element lens is 6 h (= 420 μm).
The arrangement of the element lenses is determined so that the image areas of the respective element lenses viewed from the scanning direction (x direction) overlap in the y direction. Here, an element lens array in which 120 element lenses are arranged in the y direction without any gap is shifted in the x direction by an element lens diameter of 6h (= 420 μm), and an element lens radius of 3h (= 210 μm) is y. 120 rows were arranged by alternately shifting in the direction. At this time, each flat plate MLA11, 12, 16, 17
The opening is 50.4 mm × 50.61 mm.

The flat plates MLA11, 12, 16, 17
Was manufactured by masking a glass substrate having a thickness of 1.7 mm with a circular aperture array having the same shape as in FIG. 6, and forming the distributed index lens array by ion exchange at the aperture.
The substrate has a thickness of 0.9 m after forming the distributed index lens array.
It was polished so as to be m. In addition, the wavelength of 4
An antireflection film for 36 nm was formed.

FIG. 7 shows each aperture stop array 2 viewed from the z direction.
The structure of 0,21 is shown. One aperture stop element 20a, 2
The diameter of 1a is 140 μm, and the arrangement in the xy directions is adjusted to the flat plate MLA. Here, considering that the front-side back focus of the flat plate MLA is f ₁ = 700 μm, it can be said that the numerical aperture of the imaging system is 0.1. The aperture stop arrays 20 and 21 were manufactured by etching stainless steel having a thickness of 20 μm into the shape shown in FIG. 7 and applying black alumite plating or the like having a low reflectance.

FIG. 8 shows the field stop array 22 viewed from the z direction.
The structure of is shown. The cycle in the xy direction is the same as the aperture stop array.
It is fitted to the flat plate MLA. The field stop elements 22a of the field stop array are regular hexagons inscribed in a circle having a diameter of 4h (= 280 μm), and are arranged so that one side is parallel to the y direction, as shown in FIG. This field stop array 22
Was manufactured by etching stainless steel having a thickness of 20 μm into the shape shown in FIG. 8 and applying black alumite plating or the like having a low reflectance.

The field stop element 22a has a diameter of 4h.
Since it is a regular hexagon inscribed in a circle of (= 280 μm) and one side is parallel to the y direction, the central rectangular portion A
Has a height of 2h (= 140μm), and the upper and lower isosceles 3
The height of each of the corners B _U and B _L is h (= 70 μm). On the other hand, a field stop element 22b adjacent to a certain field stop element 22a in the x direction is 3h (= 210) in the y direction.
Since the two field stop elements 22a and 22b are viewed from the x direction, the central rectangular portion A does not overlap in the y direction, but the upper and lower isosceles triangles B _U and B are arranged. _{For L} , the upper 2 isosceles 3 of one element 22a
The corner B _U and the lower isosceles three corner B _{L of} the other element 22b will just overlap. Moreover, the sum of the lengths of both isosceles triangles B _U and B _{L in} the x direction when viewed at the same height y is exactly the width of the rectangular portion A in the x direction at any height y. Match.

By adopting such a structure, the rectangular portion A having no overlap and the overlapped portion 2
Areas A and B in the case where the field of view (the field of view has the same shape as the field diaphragm array 22) are scanned at a constant speed in the x direction because the line integral aperture in the x direction with the equilateral triangular portion B becomes equal. It is possible to equalize the integrated exposure amount of. That is, by using such a field stop array 22, the entire image can be smoothly joined also in the y direction orthogonal to the scanning direction.

The size K of the field of view in the y direction of the field stop array 22 smoothly joined in the y direction as described above.
_y is 50.33 mm. Here synthetic field K _y is the area of the rectangular portion A, 3 corners a pair of isosceles B _U, the total length of the region B consisting of B _L, i.e., partial imaging optical system 8a
Is defined as a region where the exposure amount is equal even when used alone. Actually, as shown in FIG. 8, the height h (= 7) at which the exposure amount linearly decreases on the upper side of the composite visual field K _y.
There is an upper junction region C _U of 0 μm), and there is also a lower junction region C _{L of} height h (= 70 μm) where the exposure dose linearly decreases on the lower side of the synthetic visual field K _y . That is, the upper junction region C _U and the lower junction region C _L are located at the upper and lower ends of the field stop array 22, there is no overlap in the single partial imaging optical system 8a, and the exposure amount goes upward and downward. This is an area that decreases linearly.

Four field stop arrays 2 as in this embodiment
When 2 is used, the lower junction region C _L of the upper field aperture array 22 and the upper junction region C _U of the lower field aperture array 22 of the adjacent field aperture arrays 22 overlap each other. It may be arranged.
This is shown in FIG. By taking this arrangement,
Exposure of the overlapping area C and if partial imaging optical system 8a may be equal rectangular portions A and a pair of isosceles triangle portion B _U, the exposure amount in the B _L. However, in this case as well, the upper and lower boundaries C _U and C _L of the entire MLA are inevitably non-overlapping portions, and this portion needs to be a non-use area in the exposure process. Eventually, the combined visual field in the y direction of the four partial imaging optical systems 8a is 4 times K _y and h
It is 201.53 mm, which is the sum of three times.

Next, the illumination optical system will be described. The illumination optical system 7 is composed of four partial illumination systems 7a as shown in FIG. This corresponds to the arrangement of the partial image forming optical system 8a of the image forming system in FIG. 2, and has a structure for illuminating only a substantial exposure area of the partial image forming optical system 8a. In FIG. 10, after the light from the light source 6 by the high-pressure mercury lamp is shaped, it is divided by the first half mirror 30a, and each light is further divided into the second and third half mirrors 30b, 30b.
It is divided at 30c. In this way, the four light beams having the same intensity are guided to the four partial illumination systems 7a. Reference numerals 31a, 31b, 31c in FIG. 10 are mirrors. An intensity adjusting element 32 is provided at the entrance stage of each partial illumination system 7a as shown in FIG. 11, and the intensity of the four beams is adjusted to be precisely equal.

FIG. 11 shows the structure of one partial illumination system 7a. In FIG. 11, one of the four divided beams is incident. This beam is deflected by the mirror 31 in the z direction, expanded by the beam expander 33, and incident on the fly-eye lens array 34. The illumination light diaphragm array 37 is illuminated by the condenser lens 36. A spatial coherence diaphragm 35 is arranged at the focal position of the fly-eye lens array 34, and the spatial coherence of the illumination light can be adjusted by adjusting the size thereof. This is a general Koehler illumination system used in semiconductor manufacturing equipment and the like, and the light intensity on the illumination light diaphragm array 37 has high uniformity. Here, the fly-eye lens array 34 has 10 × 10 elements, the size of the element lens is 4 mm square, and the focal length is 8 mm.
mm. The focal length of the condenser lens 36 is 102 mm. Therefore, an illumination area of about 51 mm × 51 mm can be obtained on the illumination light diaphragm array 37.

The illumination light diaphragm array 37 is an MLA of the image forming system.
The same structure as the field stop array 22 used in FIG. The direction of the illumination light diaphragm array 37 is determined by the MLA of the imaging system.
The field stop array 22 is aligned in the same direction. The illumination light diaphragm array 37 is a first flat plate ML for illumination.
A38 and the second flat plate for illumination MLA39, the mask 1
It is imaged on the surface. The first illumination flat plate MLA38 and the second illumination flat plate MLA39 are used as the front stage first flat plate MLA11 and the front stage second flat plate MLA12, or the rear stage first flat plate MLA16 and the rear stage second flat plate MLA17 of the partial imaging optical system 8a. Is the same as.

With the above optical system, an illumination light array having the same shape as the field stop array 22 of the partial imaging optical system 8a is generated on the mask 1. That is, the partial illumination optical system 7a has a structure for selectively illuminating the field of view of the MLA of the partial imaging optical system 8a. Note that the illumination flat plate ML
It is desirable that the image forming system based on A38 and A39 be configured such that the magnification can be finely adjusted and the size of the region of the element of the illumination light array can be adjusted to an appropriate value. The fine adjustment of the magnification can be performed, for example, by providing the flat plates MLA 38 and 39 with a mechanism capable of translating in the z direction while maintaining the distance therebetween.

In the above optical system, the MLA of the imaging optical system 8a is
The field of view and the illumination light array of the illumination optical system 7 are both arranged as shown in FIG. 9. By accurately aligning both of them, the partial patterns illuminated by the four partial illumination optical systems 7a. Is transferred to the wafer 2,
Further, in this state, the mask 1 and the wafer 2 are interlocked and scanned at a constant speed in the x direction, whereby the mask pattern 1
The whole a can be transferred to the wafer 2.

FIG. 12 shows this state. However, in FIG. 12, the mask and the wafer are fixed, and the illumination optical system and the imaging optical system are drawn as if they were moved. However, since the movement of the mask and the wafer is relative to the illumination optical system and the imaging optical system, the exposure area when the mask and the wafer are moved with the illumination optical system and the imaging optical system fixed in FIG. Is equivalent to

In FIG. 12, constant velocity scanning is performed in the x direction starting from P to Q. The combined visual fields of the four field diaphragm arrays are 110.76 mm in the x and y directions, respectively.
Since it is 201.53 mm, it is 300 mm x 200 mm
In order to cover the pattern area of, a constant speed scan of 411 mm may be performed. Here, since the four field stop arrays are arranged so that their non-use areas overlap each other, each point in the total combined field after scanning can have the same exposure amount. Although the pattern area is set to 300 mm × 200 mm in this embodiment, a larger exposure area can be obtained by increasing the scan length in the x direction. Also in the y direction, the exposure region can be expanded by paying attention to the overlap of the visual fields and increasing the number of the partial MLAs.

[0034]

As described above, according to the present invention, a high-resolution large-screen liquid crystal exposure apparatus can be constructed in a small size, a light weight, and a low cost.

[Brief description of drawings]

FIG. 1 is a diagram showing the principle of the present invention.

FIG. 2 is a diagram showing the principle of the present invention using scanning.

FIG. 3 is a sectional view showing the entire exposure apparatus.

FIG. 4 is a plan view showing the entire imaging optical system.

FIG. 5 is a sectional view showing a partial imaging optical system.

FIG. 6 is a plan view showing an MLA of the partial imaging optical system.

FIG. 7 is a plan view showing an aperture stop array of the partial imaging optical system.

FIG. 8 is a plan view showing a field stop array of the partial imaging optical system and an illumination light stop array of the partial illumination optical system.

FIG. 9 is a plan view showing the entire field stop array of the imaging optical system and the entire illumination light stop array of the illumination optical system.

FIG. 10 is a plan view showing an entire illumination optical system.

FIG. 11 is a sectional view showing a partial illumination optical system.

FIG. 12 is a plan view showing a scanning method.

FIG. 13 is a sectional view showing a conventional technique.

FIG. 14 is a sectional view showing another conventional technique.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Mask 1a ... Pattern area 2 ... Wafer 2a ... Resist 1b, 2b ... Movable stage 1c, 2c ... Gap sensor 3 ... Inverted equal-magnification image for each area 4 ... Equal-magnification erect image 4a ... Partial pattern image 5a, 5b ... Aperture array 6 ... Light source 7 ... Illumination optical system 7a ... Partial illumination optical system 8 ... Imaging optical system 8a ... Partial imaging optical system 10 ... Pre-stage MLA 11 ... Pre-stage first flat plate MLA 12 ... Pre-stage second flat plate MLA 10a, 11a, 1
2a ... Element lens 15 ... Rear stage MLA 16 ... Rear stage first flat plate MLA 17 ... Rear stage second flat plate MLA 15a, 16a, 1
7a ... Element lens 20 ... Front stage aperture stop array 21 ... Rear stage aperture stop array 20a, 21a ... Aperture stop element 22 ... Field stop array 22a, 22b ... Field stop element 23 ... Spacer 24 ... Metal holder 30a, 30b, 30c ... Half mirror 31, 31a, 31b, 31c ... Mirror 32 ... Intensity adjusting element 33 ... Beam expander 34 ... Fly-eye lens array 35 ... Spatial coherence diaphragm 36 ... Condenser lens 37 ... Illumination light diaphragm array 37a, 37b ... Illumination light diaphragm element 38 ... 1st flat plate MLA for illumination 39 ... 2nd flat plate MLA for illumination

Claims (11)

[Claims] 1. Arrangement of a pre-stage micro lens array by arranging a pre-stage micro lens array that covers a row direction of the pattern behind a mask on which a pattern to be transferred onto a wafer is recorded. An inverted equal-magnification partial pattern image is formed for each area rotated by 180 ° for each area, and a rear stage having the same arrangement as the preceding micro lens array is provided behind the inverted equal-magnification partial pattern image for each area. By arranging the micro lens array, an erecting equal-magnification image of the partial pattern is formed on the wafer, and the mask and the wafer and the front and rear micro
An exposure apparatus for a liquid crystal, which transfers the pattern onto a wafer by relatively scanning the lens array in the row direction of the pattern. 2. The pre-stage and post-stage micro lens arrays are formed by a plurality of pre-stage and post-stage partial micro lens arrays, respectively, and the pre-stage and post-stage partial micro lens arrays are mutually arranged in the optical axis direction. 2. The liquid crystal exposure apparatus according to claim 1, wherein the liquid crystal exposure apparatus is arranged in the same array, and the front and rear microlens arrays are arranged so as to cover the row direction of the pattern by the scanning. 3. The liquid crystal exposure apparatus according to claim 1, wherein each of the element lenses of the front-stage and rear-stage micro lens arrays is configured to be telecentric on both sides. 4. The liquid crystal exposure apparatus according to claim 1, wherein the exposure field of the mask, which is temporarily imaged on the wafer, is illuminated with a uniform intensity. 5. The liquid crystal according to claim 1, wherein a field stop array having the same arrangement as the front and rear micro lens arrays is arranged at the image forming position of the inverted equal-magnification partial pattern image for each area. Exposure equipment. 6. The array of the field stop arrays is continuous so as to overlap in the column direction when viewed from the row direction, and the integrated exposure amount due to the scan is uniform in the column direction. The liquid crystal exposure device according to claim 5, wherein the exposure device is arranged in a line. 7. The liquid crystal exposure apparatus according to claim 6, wherein each field stop element of the field stop array has a regular hexagonal shape having sides parallel to the column direction. 8. The liquid crystal according to claim 5, wherein a region of the mask, which is conjugate with the individual field stop elements of the field stop array with respect to the preceding microlens array, is illuminated with a uniform intensity. Exposure equipment. 9. An illumination light diaphragm array having the same arrangement as the field diaphragm array is prepared, and the illumination light diaphragm array is illuminated with a uniform intensity. 9. The liquid crystal according to claim 8, wherein an illuminating micro-lens array having the same arrangement as that of the front-stage and rear-stage micro-lens arrays is arranged to illuminate a region of the mask which is conjugate with the field stop element. Exposure equipment. 10. A front gap sensor for detecting a distance between the mask and a front micro lens array, and a rear gap sensor for detecting a distance between the rear micro lens array and a wafer are provided. Based on the output of the rear gap sensor, the mask and front micro lens
3. The liquid crystal exposure apparatus according to claim 1, wherein the distance between the liquid crystal and the array and the distance between the rear micro lens array and the wafer are controlled to be constant. 11. The mask and the front portion micro-each of
A plurality of front stage partial gap sensors for detecting a distance from the lens array and a plurality of rear stage partial gap sensors for detecting a distance between each of the rear stage partial micro lens arrays and the wafer are provided. Based on the average value of the outputs of the front and rear partial gap sensors, the average distance between the mask and each front partial micro lens array during scanning, and the rear partial micro lens array of each 3. The liquid crystal exposure apparatus according to claim 2, wherein the average distance between the wafer and the wafer is controlled to be constant.