JPH09213498A - Quadrupole ion storage ring - Google Patents

Abstract

The present invention relates to an ion storage ring, and particularly to a means for stably accumulating a low-energy ion beam of kiloelectron volts or less and accelerating and decelerating the ion beam. A high frequency quadrupole ring electrode having an accelerating means arranged in a vacuum, a high frequency power source for ion storage, an accelerating means, and a centrifugal force compensating DC voltage applying power source.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low-speed ion beam storage device having a level of about 1 kiloelectron volt or lower, and a high-frequency quadrupole ion storage ring for stably storing a low-speed ion beam on a circular orbit, and an ion. It consists of means for injecting and extracting the beam and means for accelerating and decelerating the accumulated ion beam.Means for elucidating physical phenomena of atoms and molecules, means for spectroscopic analysis, and application of ion beam operation such as laser cooling to objects. Is effective for ion beam implantation. Further, by additionally providing a mass spectrometric means and a means for generating an ion molecule reaction, it is effective as a means for producing a new substance.

[0002]

2. Description of the Related Art An ion storage ring has been constructed for the purpose of accumulating particles of mega electron volts or more due to the historical background that has developed as an accelerator for obtaining high-energy particles used in elementary particle physics and nuclear physics. It has been. Due to the practical requirement to keep the beam orbit constant, the strong-convergence storage ring with a magnetic field having a synchrotron acceleration function is now the mainstream.

However, in recent years, accumulated ion beams of several tens of megaelectron volts or less have been demanded as a means for clarifying the physical phenomenon of atoms and molecules, which is a low energy phenomenon. As a method of realizing this, the storage ring actually constructed at present is a storage ring using the storage method by the magnetic field used in the conventional high energy accelerator. (For example, M. Larsson et al .: Physical Review Lette
r Vol.70 Page 430 (1993)). However, in this type of ion storage ring, it is difficult to obtain a stable and reproducible weak magnetic field, so the lower limit of the ion beam that can be stored is about several kilo-electron volts.

On the other hand, as a means for accumulating a low-speed ion beam having a level of about 1 kilo-electron volt or lower, a method of accumulating ions by using a focusing force by a high-frequency quadrupole electric field has been proposed. The electrode structure is a combination of four ring electrodes 11 to 14 as shown in FIG. 1, and its cross section has a quadrupole structure. Electrodes 11 and 14 and electrodes 12 and 13 are connected to this electrode so that they have the same potential, respectively, and a high frequency power supply device 15 is provided between them.
By applying a high frequency voltage of angular frequency Ω, amplitude 2Vrf,
A quadrupole electric field is formed inside the electrode. At this time, if Ω and Vrf are selected as follows, the ions are strongly focused on the circular orbit represented by r = 0 by the high frequency quadrupole electric field and accumulated inside the ring. In the following calculation, m and Q represent the mass and charge of the ions, Vrf and Ω represent the amplitude and angular frequency of the high frequency voltage, and 2r0 represents the distance between the electrodes. Ignoring the curvature of the electrode for simplicity, this strong focusing action causes the ions to be strongly focused toward the center of the quadrupole when the stability parameter q expressed by (Equation 1) satisfies q <0.91.

[0005]

[Equation 1]

This strong focusing effect can be described as a harmonic potential given by (Equation 2) and (Equation 3).

[0007]

[Equation 2]

[0008]

(Equation 3)

This potential is generally called a pseudopotential, and D gives the depth of the pseudopotential. The harmonic vibration of ions due to pseudopotential is called secular motion, and its frequency ω0 is given by (Equation 4).

[0010]

(Equation 4)

A conventional example of the high-frequency quadrupole storage ring shown above is a high-frequency quadrupole ion storage ring made to store antiprotons, which are antiparticles of protons (for example,
BI Deutch et al .: Physica Scripta T22 Vol. 248 (published 1988)). This conventional example aims at accumulating an antiproton beam having a kinetic energy of 2.5 kiloelectron volts. It has been proposed to inject the ion beam into the ring electrode by trapping the ion beam by starting to apply a high frequency electric field when the ion beam is passing through the ring electrode.

[0012]

The following two points can be problematic in the industrial sense in the idea of the above-mentioned conventional example. The first is a high frequency power supply for implanting an ion beam. Since the high frequency is applied while the ion beam is passing through the inside of the ring electrode, the high frequency applying circuit is required to have a high speed to rise in about the transit time. For that purpose, it is necessary to lower the impedance of the high-frequency circuit system and further to provide a high-frequency power supply device with a large power capacity capable of driving the circuit system having the low impedance. 51 MH in this paper
It is necessary to apply a high frequency voltage of 2.6 kV for 1000 nanoseconds, and a high frequency power supply of 2 KW is used for that purpose. However, it is not efficient to use such a high power high frequency power supply only for implanting ions.

Secondly, there is a problem that occurs when the average orbit of the orbiting ion beam is displaced from the bottom of the pseudopotential to the outer peripheral side by the centrifugal force. In this paper, the position where the centrifugal force and the centripetal force due to the pseudopotential balance is the standard orbit of the ion. This position moves outward as the energy of the ion beam increases. The calculation is shown in FIG.

The radius of the electrode is R, the kinetic energy of the standard ion 21 is Es, the standard velocity is vs, the expansion amount of the standard orbit radius from the radius R is rs, and the standard angular frequency is ωs. The definitional expression of ωs is (Equation 5), and the equilibrium condition between the centrifugal force of ions and the force due to the pseudopotential is given by (Equation 6).

[0015]

(Equation 5)

[0016]

(Equation 6)

From equations (5) and (6), the orbital radius R + rs when the centrifugal force acts is determined. That is, the expansion amount rs of the standard trajectory due to the centrifugal force is given by (Equation 7).

[0018]

(Equation 7)

At this position of rs, the ion beam always receives a strong high-frequency electric field, and starts to vibrate at the same high-frequency frequency. This vibration is called micromotion. That is, a disturbance acts on the ions, and the stability of the ion beam is found out. The energy at that time is equal to the magnitude of the pseudopotential at rs. That is (Equation 7)
The vibration energy K in the lateral direction of the ion beam is given by (Equation 8) using rs given by

[0020]

(Equation 8)

Therefore, a first object of the present invention is to provide a quadrupole ion storage ring for stably storing an ion beam without being disturbed by a high frequency electric field. And a second problem is to provide a quadrupole ion storage ring that avoids the need for a high power, high frequency power supply. And the 3rd subject is to provide the application field which uses this ion beam as industry, and its method.

[0022]

[Means for Solving the Problem] Suggestions for Solving the First Problem by I. Waki et al .: Physical Review Letters Volume 68
2007 pages (published in 1992) will give you. In other words, in this paper, almost stationary ions generated in the storage ring are accumulated for about 1 hour, and these ions are laser-cooled, so that the ions repel each other by Coulomb force. Observing the arrangement state.
This phenomenon is not realized when there is a large disturbance that enhances the thermal motion of the ions. That is, this paper shows that the disturbance to the ion is extremely small at the bottom of the pseudopotential where the ion is located.

That is, in order to solve the first problem of the present invention, if the orbit of the ion beam is located at the bottom of the pseudopotential, the high frequency electric field is involved only in the focusing action of the ion beam, and the ion beam vibrates. It is possible to eliminate adverse effects such as Therefore, the centripetal force of the ion beam, which was carried by the pseudopotential in the prior art, is given by another means in the present invention.

In the present invention, as shown in the explanatory view of FIG.
A centripetal force is applied by providing a means for superposing a DC voltage between the inner electrode 11 and the outer electrode 12 of the electrodes forming the ion storage ring. Reference numeral 25 is a variable DC power source, and 26 and 27 are high impedance connecting means for connecting the storage ring electrode and the variable DC power source. This DC voltage gives the ion beam an inward force on the electrodes. Therefore, the centrifugal force compensation DC voltage value Vcomp is adjusted according to the energy of the ion beam so that the centrifugal force received by the ion beam is compensated and the average trajectory of the ion beam is located at the bottom of the pseudopotential. The DC voltage is similar to that applied uniformly at the center of the electrode, and the electric field gradient at the center of the electrode is (Vco
mp / a). Then, from the condition that the centrifugal force of the ion beam is canceled by the force due to the DC voltage, (Equation 9) is derived.

[0025]

[Equation 9]

By the above means, when the ions 28 move on the central orbit shown in FIG. 3, they do not receive a high frequency electric field and are not disturbed by the high frequency electric field. Then, only the ions 29 moving on an orbit deviated by Δr from the average orbit receive the high frequency electric field and are strongly focused. With the above, a stable circular motion of the ion beam is realized.

In order to solve the second problem, a high-frequency quadrupole ion storage ring is provided with a beam energy manipulating means for accelerating and decelerating. This allows the ions created inside the storage ring to be accelerated to an arbitrary energy. As a result of this, the need for high power RF power supplies is avoided.

As an acceleration principle for realizing this, the same synchrotron phase stability principle as that of the conventional synchrotron accelerator is used. A proposal for an accelerator using the principle of phase stability was made by Macmillan in 1945 (for example, Physical Review 68: 143 (194).
Issued for 5 years)). And the explanation of the principle can be found in various places (eg Hiroo Kumagai: Experimental Physics Course: Accelerator Kyoritsu Shuppan).

Two concepts of the high frequency quadrupole ion storage ring to which the principle of phase stability for realizing the present invention is applied will be described below.

The first is to divide the ion storage ring and insert an accelerating means using an accelerating cavity in that portion.
An accelerating means using an accelerating cavity for this purpose is shown in FIG. This is two plate electrodes 30 and 31 with a hole in the center.
And an acceleration cavity electrode 32. The flat plate electrodes 30 and 31 are grounded, and an accelerating AC voltage is applied to the accelerating cavity electrode 32 by an AC power supply 33. This allows the plate electrode 3
An AC electric field is generated in the gap between 0 and 31 and the acceleration cavity. When ions pass through these two gaps, they are accelerated or decelerated depending on the direction of the electric field. Since the interior of the accelerating cavity electrode is equipotential, the ions make uniform linear motion. The condition for operating this accelerating means is given by the synchrotron phase stability principle. In the following, the discussion will proceed assuming that the charge of ions is positive. Although only the rings 12 and 14 are shown in FIG. 4, the rings 11 and 13 are similarly provided at the opposing positions.

First, a condition for stably rotating ions at a constant speed without receiving an accelerating AC voltage when an accelerating AC voltage having a constant frequency is applied will be determined. For this purpose, it is necessary to satisfy two requirements. That is, first, when ions moving at a velocity v (hereinafter referred to as standard ions) are incident on the accelerating means, the amplitude of the accelerating electric field applied to the two accelerating portions is 0, and secondly, An electric field is created in which ions that arrive early are decelerated in both gaps, while ions that arrive late are accelerated. For that purpose, when the standard ions enter the accelerating cavity, the amplitude of the accelerating AC electric field is 0, and before and after that, the accelerating cavity voltage needs to shift from positive to negative. When ejected from the accelerating means, the amplitude of the accelerating AC electric field is 0 with respect to the standard ions, and before and after that, the accelerating cavity voltage needs to shift from negative to positive with respect to time. The above conditions are the length b of the accelerating cavity, the frequency facc of the accelerating AC electric field, and the integer n (n>n>
= 0) is given by (Equation 10).

[0032]

(Equation 10)

Further, when the standard ions orbit the ring electrode and reach the accelerating means again, the amplitude of the accelerating AC electric field needs to be 0 again. The condition therefor is given by (Equation 11).

[0034]

[Equation 11]

From the above (Equation 10) and (Equation 11), the condition (Equation 12) imposed on the electrode structure and the relational expression (Equation 13) between the ion beam energy and the acceleration AC electric field frequency can be derived.

[0036]

(Equation 12)

[0037]

(Equation 13)

When accelerating the ions, the frequency of the acceleration AC electric field is swept from the low frequency side to the high frequency side. Then, the ions will always come behind with respect to the phase where the accelerating AC electric field becomes zero, and the ions will continue to receive a positive force, so they will be accelerated. On the contrary, when the accelerating AC electric field is swept from the high frequency to the low frequency side, the ions always move forward with respect to the accelerating AC frequency, and the ions continue to receive a negative force and are decelerated. This is the principle of the acceleration means by the acceleration cavity of the high frequency quadrupole storage ring of the present invention.

In the acceleration / deceleration process of the present invention, in order to keep the ion orbit constant, a variable DC voltage depending on the ion beam energy is applied as given by (Equation 9).

Further, in order to make the ion beam move smoothly at the junction between the accelerating cavity and the quadrupole electrode, the potential on the ion beam orbit of the high frequency quadrupole portion is set to the ground potential. For that purpose, it is located at the diagonal position of the high frequency quadrupole electrode.
The method of applying the high frequency to the pair of electrodes is the same amplitude and the opposite phase, and the high frequency potential at the center of the electrode is ground potential. Further, a negative voltage with respect to ground is applied to the inner electrode, and a positive voltage with respect to ground is applied to the outer electrode so that the DC potential becomes the ground potential at the center of the electrode.

In the accelerating means using this accelerating cavity, when the radius of the ring electrode is small, the ions move straight in the accelerating cavity, so that the ion beam is poorly coupled to the ion storage ring that moves on a circular orbit. And result in disturbed stability. Therefore, the ring electrode is divided into two congruent circular arcs, and an accelerating cavity is inserted in one or both of them. Ions can be injected and ejected along the axis of the accelerating cavity, which can improve the coupling between the two. Then, a linear quadrupole electrode having the same length as that of the accelerating cavity is inserted in the part where the accelerating cavity is not inserted. The condition imposed on the electrode structure and the relational expression between the ion beam energy and the accelerating AC electric field frequency when the cavities are divided into two, the accelerating cavity is inserted in one of them, and the linear quadrupole electrode is inserted in the other are ) And (Equation 15).

[0042]

[Equation 14]

[0043]

(Equation 15)

The second method for realizing the acceleration / deceleration function is a method in which the high frequency quadrupole ion storage ring electrode is divided into a plurality of portions, and an AC voltage is applied to the divided gaps for acceleration. The accelerating means using the first accelerating cavity may have a drawback in that perturbation of ions is increased due to the insertion of an accelerating electrode having a shape greatly different from that of the ring electrode. Further, in the low energy ion beam, the focusing force due to the high frequency on the ions does not work in the accelerating cavity portion, so that the ions are lost in that portion. On the other hand, the present embodiment is characterized in that it is possible to obtain a continuous strong focusing effect at all positions on the ring by making the distance at which the electrodes are divided sufficiently small. That is, it becomes possible to accumulate even almost stationary ions. The acceleration AC voltage is applied to the entire divided electrodes. Then, the ions are accelerated or decelerated in the divided gap. Inside the divided electrodes, the ions do not receive this AC voltage, and thus move circularly. The relationship between the acceleration AC voltage frequency and the ion beam energy when the electrode is divided into two congruent arcs is based on the principle of synchrotron phase stability.

[0045]

(Equation 16)

Is given by

In this case, the ions generated inside the ring can be accelerated from the state of zero initial velocity by setting the number of divisions to 3 or more. The number of divisions is three or more, and by applying an accelerating AC voltage with a phase shift to each divided electrode, it is possible to uniquely determine the direction of acceleration that was impossible with two divisions. Because.

As a result, it is not necessary to inject ions as a beam, and a high frequency power source with high power capacity is not required.

When applying an accelerating AC voltage to the divided electrodes of this embodiment, it is important not to lower the impedance of the electrodes to ground at a high frequency. Therefore, a high impedance to ground is secured by a method of applying an alternating current through a transformer connected to the divided parts of the electrodes.

In the above discussion of phase stability, the relationship between the acceleration cavity and the length of the ion orbit is rigorously defined.
However, achieving this with only the manufacturing precision of the ion storage ring is expected to be difficult in the case of the present invention having a short ring circumference. A method for avoiding this will be disclosed below.

This difficulty can be avoided if either the acceleration cavity length or the ion orbital length can be effectively changed. In the present invention, the ion orbital length is effectively variable by applying a DC voltage to a part of the ion orbital. That is, when accumulating positive ions,
If part of the orbit has a positive electrostatic potential compared to other parts, the ion velocity at this part will be smaller, so
The ion circulation time is longer than that when no voltage is applied. On the contrary, if a negative electrostatic potential is given, the ion velocity at this portion becomes high, and the orbiting time of the ions becomes shorter than that when no voltage is applied. As described above, it is possible to effectively fine-tune the ion beam trajectory by applying the DC voltage to a part of the ion trajectory. When implementing, a method of superimposing a DC voltage on the accelerating cavity part, or cutting a part along the orbit of the high frequency quadrupole ion storage ring to insulate it DC and superimposing it on the high frequency voltage for ion storage DC voltage is applied.

By carrying out the present invention, an ion beam of a level lower than kilo-electron volt, which is impossible with the ion storage ring and the high-frequency quadrupole ion storage ring using the conventional magnetic field, is stably stored. It becomes possible.

Further, by applying a centrifugal force compensation DC voltage, it becomes possible to accumulate an ion beam having a higher energy than in the conventional method in which the centrifugal force is compensated by a high frequency electric field. The situation is shown below. In the conventional technique, the ion beam makes an orbital motion due to the balance between the centrifugal force received by the ion beam and the force due to the pseudopotential, so that the energy of the storable ion beam is the depth D of the pseudopotential.
Was restricted by. That is, when rs exceeds r0, the ion beam collides with the electrode and is lost. Therefore, the maximum energy Es (max) of the storable ion beam is rs (Es = Esmax) = From r0, (Equation 1
7).

[0054]

[Equation 17]

On the other hand, in the present invention, accumulation and acceleration can be performed until the angular frequency ωs of the ion beam matches the secular motion frequency ω0. When the orbital motion frequency coincides with the secular motion frequency, the accelerating means gives energy to secular motion, which is the vibration in the direction perpendicular to the traveling direction of the ions, which means that the ions resonate and become unstable and lost from the electrodes. To do. Therefore, the upper limit energy that can be accumulated when the centrifugal force is compensated by the DC voltage is (Equation 18).

[0056]

(Equation 18)

Generally, (Equation 18) is larger than (Equation 17). That is, it becomes possible to store an ion beam having a higher energy than in the conventional technique.

Further, by providing an accelerating means which is not provided in the conventional high frequency quadrupole ion storage ring, the beam can be accelerated and decelerated to an arbitrary energy of kiloelectron volts or less.

Further, by providing an accelerating means, it is possible to generate an ion beam inside the storage ring by accelerating the ions generated inside the storage ring electrode. Therefore, unlike the prior art, it is not necessary to change the high frequency amplitude at high speed in order to implant the ion beam. That is, since it is sufficient to keep the high frequency amplitude for ion accumulation constant, the high frequency circuit system can have a high impedance and can be driven by a low power high frequency power source.

Another method for eliminating the need for a high-frequency power source having a high power capacity in connection with ion injection is to provide a dedicated ion beam injection path for ion beam injection in the quadrupole storage ring. Also, an ion beam emitting path can be provided on the same principle. First, the ion beam injection of the present invention
The electrode structure and principle of the exit path are shown.

The electrode structure for providing the ion incident path and the ion exit path has a high frequency voltage of the same phase of the quadrupole electrode on the surface formed by the ion beam trajectory when the cross section perpendicular to the ion beam trajectory is seen. The two electrodes to be applied are positioned so that the trajectory of the ion beam is sandwiched by the two electrodes from above and below to form a quadrupole structure. Then, at the branched portion, at least three linear quadrupole electrode structures intersect. The electrode structure is such that, first, the structure of the electrodes located on the surface formed by the ion beam trajectories is such that two of the four electrodes of the two adjacent ion beam entrance / exit paths are adjacent to each other without interposing the ion trajectories. The electrode has a shape that smoothly connects two electrodes. The structure of the electrodes located on both sides of the surface formed by the trajectory of the ion beam is an electrode having a shape along the trajectory of the ion beam. The electrode at the branched portion may be formed integrally with the electrode of the ion beam entrance / exit path, or may be formed as a combination of a large number of electrodes.

When a high frequency voltage is applied between the electrodes on both sides of the electrode structure having a three-layer structure parallel to the ion beam orbital plane and the electrodes sandwiched between them, a quadrupole high frequency wave is applied to the ion orbital portion. An electric field is created that causes the ions to focus along the orbit.

When the ion beam is branched, it is necessary to have a function of arbitrarily selecting one of a plurality of ion beam emission paths. Its function is to apply a DC voltage or pulse voltage to the branching part, apply a force in a direction almost perpendicular to the ion beam traveling direction and parallel to the ion trajectory plane, and guide it to one of the ion beam exit paths. It is realized by putting it in. Therefore, the branched portion of the electrode located on the plane including the ion beam orbit is divided at two places, and this portion is galvanically insulated. By superimposing and applying a DC voltage on this portion, ion beam emission path selection is realized.

When a plurality of ion beam paths are merged into one beam path, if the deflection direction of the ion beam exit path is within 90 degrees with respect to the plurality of beam entrance paths, the inertia of the ion beam spontaneously occurs. Since it goes to the ion beam exit path, the function of applying a DC voltage or a pulse voltage is not required.

One of the methods for realizing the above ion beam branch path will be described. First, the trajectory of the ion beam is removed from the flat metal plate. The width of the raceway is about twice the thickness of the metal plate. Then, the electrode plates are installed in parallel so that the two metal plates from the upper and lower sides are equidistant to each other and the distance between the upper and lower metal plates is about the width of the orbit. A flat plate-shaped insulator was sandwiched between each metal plate,
It is desirable to have a five-layer structure. If a high frequency is applied between the electrode plate having the ion beam orbital path and the two upper and lower electrode plates having the above electrode structure, a high frequency electric field having a quadrupole component as a main component is applied on the ion beam orbital path. To be done. This electrode structure resembles the electrode arrangement by Strabel, which captured charged particles by a high-frequency electric field (H. Straubel: Die
Naturwissenschaften, Vol. 18, 506 pages, published 1955). However, in this experiment, it was limited to trapping charged particles in circular holes or arranging charged particles side by side in elongated holes. Not in.

However, the quadrupolarity of the high-frequency electric field formed on the ion beam orbit is incomplete with only a simple electrode structure consisting of the above-mentioned three-layer electrode group. Therefore, it is effective to increase the quadrupolarity by processing the part of the electrode facing the ion beam orbital path close to the quadrupole structure.

Further, when the electrode group is made of a metal flat plate, the electrodes apart from the ion beam orbit, which do not greatly affect the ion beam orbit, act as unnecessary capacitance. This puts an unnecessary burden on the high-frequency power supply, so it is effective to remove it.

By forming the above ion beam branching path in a part of the circumference of the quadrupole ion storage ring, it is possible to freely inject, store, accelerate, decelerate, and extract an ion beam of several kiloelectron volts or less. . Further, in addition to these functions, by providing an ion source, a mass spectrometric means, a means for causing a reaction with a molecular beam, a means for interacting with a laser beam to perform a spectroscopic operation, etc. Ion operation becomes possible. Therefore, in the following, an industrial application field that makes use of the features of these ion operating means, and a combination method and operating method of the above-mentioned necessary means for realizing the industrial application field will be disclosed.

One of the applications of the present invention is a means for synthesizing new substances. It is known that the ions trapped in the vacuum collide with the residual molecular gas in the vacuum and cause a chemical change, that is, an ion-molecule reaction. Moreover, even a substance that is unstable in a gas or a solution can be stably captured for a long time because the ions are captured in a vacuum. Taking advantage of this feature, it becomes possible to generate unstable substances in the storage ring that cannot be synthesized in a solvent or gas. That is, one of the raw material substances is accumulated as ions in the storage ring, and the ions are allowed to interact with the molecular gas, light, electron beam, etc. to generate the target substance. The molecular gas can also easily cause a molecule-ion reaction by using a dilute molecular gas as the atmosphere in which the storage ring is placed. Further, the ion beam accumulated in the accumulation ring interacts with the molecular beam incident on the ion beam orbit to cause an ion-molecule reaction. In particular, by using the relative kinetic energy of the ion beam and the molecular beam as a variable, it is possible to cause different reactions even for the same ion or molecular species to generate ions with different structures.

When reacting with an electron beam or a laser beam,
Each may be incident on the ion orbit.

The apparatus configuration and the operating method required for carrying out the method for producing a new substance by the ion-molecule reaction inside the ion storage ring will be shown. Inside the vacuum chamber, an ion source for generating ions that will be the parent of the reaction, an ion storage ring equipped with an ion injection means, an emission means, and a mass spectrometric means, and a molecular beam generator for molecular species according to the substance to be made Alternatively, one or more of the molecular gas introduction devices are installed. Among these, the principle of the Q mass filter, which has been widely used in the past, is used as the mass spectrometric means. The Q-mass filter has the same quadrupole structure as the quadrupole ion storage ring. By applying a DC quadrupole voltage of an appropriate voltage value in addition to a high frequency quadrupole voltage of an appropriate amplitude, An operation of passing only ions having a specific mass-to-charge ratio, that is, a mass analysis operation is performed. Therefore, it is easy to cause a part of the storage ring to operate as a Q mass filter.

Next, a procedure for synthesizing a new substance using the above apparatus will be shown. Parent ions are generated by the ion source. Then, the ions are accelerated and introduced into the ion storage ring from the ion injection means. At this time, the accumulated ions usually contain impurity ions other than the desired parent ion. Therefore, a part of the storage ring that operates as the Q mass filter is set under the condition that only the ions having the charge-mass ratio of the parent ions are allowed to pass stably, so that unnecessary ions are excluded from the storage ring and the purity of the parent ions is increased. After that, a new substance is generated by interacting with a molecular beam or a molecular gas atmosphere. After generation, the mass spectrometric portion is set to pass only the target ions, and mass spectrometry is performed to enhance the purity of the target substance. Then, it is taken out from the ion emitting means of the storage ring, accumulated on the substrate and collected. Alternatively, it is used by guiding it to the next ion process. In particular, the following is the case of assuming the use as an ion beam process.

By guiding the ion beam of the substance produced by the above invention to a conventional accelerator for accelerating the ion beam of higher energy, new substance ions can be used as a high energy ion beam. As a conventional accelerator, the RFQ accelerator has a quadrupole electrode structure, so that connection is easy. In the field of high-energy ion beam application, academic applications that mainly explore the properties of atomic molecules are envisioned.

On the other hand, an ion beam of several kilo-electron volts or less is considered to be particularly useful for industrial use. One of the application fields that have been pointed out in the past is to control the physical properties of ions by injecting them into an object. In addition to this, a new application of the ion beam produced by the present invention is provided.

The first is to irradiate the surface of the material with ions having the special property created by the present invention to control the property of the surface of the material. In particular, the surface of a substance is irradiated with a highly binding ion, for example, a molecular ion having a functional group such that one of the bonding arms of -CH3, -COOH, -CH2, etc. is released, and the specific site is highly efficiently treated. It is possible to control the position of the ion to modify it. Using ions as modifiers appropriately, or changing the molecules once modified into the target molecules by chemical treatment, for example, to use as a minute mask in the etching treatment often used in semiconductor processes. Is possible. Further, by the same method, it becomes possible to control the position of a molecule serving as a catalyst at a specific site on the surface and modify it to give a catalytic function.

Second, the properties of the substance can be changed by injecting the ions produced by the present invention into the inside of the object. This method is not limited to physical property control in semiconductor processes and the like. In particular, when this method is applied to a living body, it will be possible to change the physiological state of cells or tissues by introducing special molecules into specific cells or tissues. For example, a highly reactive molecule can be directly injected into a cancer cell or the like to kill it.

[0077]

BEST MODE FOR CARRYING OUT THE INVENTION

(Example 1) The centrifugal force is compensated by the DC voltage of the present invention,
An example of accumulating the Mg ion beam is shown in FIG. 5 as an embodiment for stabilizing the beam.

24 Mg ion: mass m = 24 GeV / c 2 In the embodiment shown in FIG. 5, only one half of the ring electrode is shown, but the quadrupole ring electrodes 11 to 14 and the high frequency circuit systems 41 to 48 and DC voltage application system 25 and 49
Through 52. The two parameters R and r0 giving the electrode structure have the following values:

Electrode parameter: Electrode radius R = 60 mm
In order to apply a high-frequency voltage having a low amplitude and a large amplitude to an electrode structure having a quadrupole electrode distance r0 = 3 mm or more, a coil 42 is connected to the electrodes and an LC resonance circuit is formed with capacitors 45 to 48. As a coil used in a resonance state, a high frequency toroidal core 43 (permeability = 10) having a low magnetic permeability is used to obtain good high frequency characteristics, and if a coil is wound 40 times around it, the resonance frequency of the LC circuit is increased. Ω becomes several MHz. When the conductor wire is wound once around the toroidal core separately from this winding wire, the coil 44 becomes the primary coil and the coil 42 becomes the secondary coil, thus forming a step-up transformer. A high-amplitude high-frequency electric field can be created by inputting high-frequency power matching the LC resonance frequency from the high-frequency power supply device 41 to the primary coil. To take the parameter q at 0.5 at this frequency, Vrf = 2
12V is required. From the above, various parameters of strong convergence are calculated.

Stability parameter: q = 0.5 High frequency: Vrf = 212V, Ω / 2π = 3MHz Input high frequency power: 1W (measured value) Pseudopotential depth: D = 13.3V Secular motion frequency: At ω0 = 530kHz is there.

A circuit for applying a DC voltage for compensating for centrifugal force is implemented as follows. That is, the storage ring electrode in the resonance state has a high impedance at the resonance frequency. Actually, the impedance at the resonance frequency is about 100 kΩ. Therefore, in order to apply a DC voltage, it is necessary to connect by a connecting means having a sufficiently high impedance with respect to the ground, and in this embodiment, high impedance resistors 49 to 52 were inserted for ease of implementation. Then, capacitors 45 to 48 were inserted in order to avoid conduction of DC voltage between the electrodes. This capacitor is also the capacitor for the resonant circuit.

When the ion beam is stored in the ion storage ring having the above parameters and the centrifugal force is not compensated,
The energy of the storable ion beam is calculated from (Equation 17) as follows.

Maximum storable energy: Es (max) = 133 eV Maximum standard angular frequency: ωs (max) /2π=83.8 kHz Then, the energy K of lateral vibration is (Equation 8), and rs = r0
Therefore, the lateral vibration energy is K = D = 13.3 eV.

On the other hand, when the centrifugal force is compensated by the DC voltage, the maximum storable energy is calculated from (Equation 18) as follows.

DC voltage value: Vcomp = 260V Maximum storable energy: Es (max) = 5.3 keV Maximum standard angular frequency: ωs (max) / 2π = ω / 2π = 530 kHz.

As described above, by compensating the centrifugal force with the DC voltage, the maximum energy that can be stored can be greatly increased.

(Embodiment 2) In Embodiment 2, an embodiment of an ion storage ring in which an acceleration mechanism is realized by an acceleration cavity is shown in FIG.
Shown in

In the present embodiment shown in FIG. 6, the circular ring electrode is divided into two arc-shaped portions 61, 62 and 65, 66, and the acceleration having the structure shown in FIG. 4 on one side of the divided portions. Means 69 to 72, linear quadrupole electrodes 73 and 74 having the same length as this accelerating means are inserted in one of the divided portions. The arcuate electrode and the linear quadrupole electrode portion are galvanically isolated by using capacitors 77 and 78. The structure and size of the electrodes are obtained by dividing the ring electrode of Example 1 into two. Further, the amplitude and frequency of the driving high frequency are the same as those in the first embodiment. At this time, the length b of the accelerating cavity electrode is 21 mm when the parameter n and the parameter h in (Equation 14) are 0 and 10, respectively.

An electric circuit for driving the above electrode structure is shown in FIG.
It was also described in. First, high-frequency waves having the same phase are applied to the two arc-shaped quadrupole electrodes and the linear quadrupole electrodes to have a strong focusing action. At that time, as in the first embodiment, the transformer 79 is coupled to the quadrupole electrode and LC resonance is performed to amplify the high frequency amplitude. The high frequency power is generated by the high frequency power supply 80. The method of applying the high frequency to the two pairs of electrodes at the diagonal positions of the high frequency quadrupole electrode is the same amplitude and the opposite phase, and the high frequency potential at the center of the electrode is the ground potential. Therefore, the center of the secondary coil of the transformer 79 is grounded. Further, DC voltage applying means 81 to 84 for compensating the centrifugal force for fixing the ion beam orbit at the center of the quadrupole are provided on the two arc quadrupole electrode portions. A negative voltage with respect to ground is applied to the inner electrode, and a positive voltage with respect to ground is applied to the outer electrode, and two power sources are connected so that the DC potential is grounded at the center of the electrode. Further transformer 79
Capacitors 85 and 86 are inserted to avoid direct current conduction through. An AC power source 72 capable of frequency sweep is connected to the acceleration cavity electrode.

The maximum storable ion beam energy in the case of this embodiment is the same as that of the first embodiment, and Es (max) = 5.3.
Since it is keV, the maximum AC voltage frequency applied to the accelerating cavity electrode is facc (max) = 4.7 MHz from (Equation 15).

(Embodiment 3) FIG. 7 is an embodiment in which an electrode is divided into a plurality of parts and an acceleration voltage is applied to the divided parts.

Coils 102 and 103 are connected between the two parts of the divided ring electrode. This coil is the secondary coil of the transformer 104. Primary coil 10
The acceleration AC voltage is applied from 5. Then, the high-frequency electric field is applied to the two secondary coils 102 and 10 so that the strong-converging high-frequency electric field is applied to the divided two parts under the same conditions.
It is applied to the center of 3.

99 and 100 are DC voltage application circuits for compensating for centrifugal force. The rotation speed of the ions is determined by the frequency of the AC power supply 106 that generates the acceleration AC voltage.
Therefore, since the value of the DC voltage is calculated from (Equation 9), that voltage is applied.

(Embodiment 4) This embodiment relates to a method for arbitrarily branching one ion beam path into two beam paths and a method for merging two ion beam paths into one beam path. The electrode structure is shown in FIGS. 8 to 10.
FIG. 8 is a sketch of the electrode structure, FIG. 9 is an embodiment as an ion beam branch path, and FIG. 10 is an embodiment as an ion beam merging path. Below, the case where an ion beam having a positive charge is branched will be considered. When branching an ion beam having a negative charge, the polarity of the DC power supply is simply changed.

First, an example of the ion branch path will be described.

Ion passages are formed as 153 to 158, and this ion passage is sandwiched by two electrodes 151 and 152 from above and below as shown in FIG. It is desirable that the portion facing the ion orbit has an electrode structure close to the quadrupole structure as shown in FIG. 8 so that an ideal quadrupole electric field is formed inside the passage. A high frequency power supply 159 is used to apply a high frequency voltage to these electrode structures between the upper and lower electrodes 151 and 152 and the sandwiched electrodes 153 to 157 so that the ion beam is focused. The conditions are the same as in the case of the ion storage ring shown in Examples 1 to 3. Then, a DC voltage is applied to the electrode 164. This is because the trajectory of the ion beam is located at the center of the electrode axis, as shown in the first embodiment. The voltage value is as shown in the first embodiment.

The electrode 157 is galvanically isolated. A DC power supply 161 for applying a DC voltage is connected here. At this time, the power source and the electrodes are connected via the high-impedance connecting means 160 as necessary.

The selection of the branch path of the ion beam is carried out by the electrode 15
7 by superimposing the DC voltage generated by the power supply 161. When the ion beam is guided to the straight branch path indicated by the solid line, by applying 0 to a negative voltage, the ion beam is guided to the straight branch path by inertia or the ion beam is attracted to the electrode 157 side. When the ion beam is guided to the branch path indicated by the broken line, a positive voltage is applied to repel the ion beam to the side opposite to the electrode 157 side, and the ion beam is guided to the branch path indicated by the broken line.

On the other hand, FIG. 10 shows an embodiment of the ion beam path for joining the ion beams.

When the ion beams are combined, it is not necessary to divide the DC power source and the electrode 166. This is because the trajectory of the ion beam is uniquely determined by the inertia of the ion beam.

(Embodiment 5) In this embodiment, an ion storage ring is used as an ion-molecule reactor.
The apparatus comprises an ion source 171, two branches used as an ion entrance path and an ion exit path, and an ion storage ring having Q mass filter functions 172 and 173, and a molecular beam generator 174.

In FIG. 11 showing the present embodiment, the cross section of the ion storage ring is taken along the orbital plane of the ion beam. The ion storage ring of this embodiment has one ion entrance path and one ion exit path. Both are the same as those in the fourth embodiment.
It corresponds to the case where the ion beam shown in 1 is combined and the case where the ion beam is branched. Therefore, the ion emission path has mechanisms 175 and 176 for applying a DC voltage for controlling the trajectory of the ion beam. A direct current voltage for causing the ion beam trajectory to coincide with the electrode axis is superimposed and applied to the curved portion of the ion storage ring.

Further, the ion storage ring of this embodiment has a Q
It has the same mass spectrometric function as the mass filter.
The high frequency voltage and the DC voltage value of the mass spectrometric section 172 can be arbitrarily applied. Variable voltage power supply 173
Indicates a DC power supply for mass spectrometry.

The ion source is a device that produces the parent ion in the ion-molecule reaction. It has the function of accelerating the ions generated here and injecting them into the ion storage ring. The molecular beam source 174 is a device that produces a parent molecule in an ion-molecule reaction. It has the function of generating molecular beams and controlling their stopping.

Next, a method for operating the above ion-molecule reaction apparatus will be described. The following operating method is for positive ions. In the case of negative ions, it can be easily applied by only reversing the polarity of the ion extraction voltage.

First, the ions generated by the ion source are stored in the ion storage ring. At this time, the output voltage of the ion extraction power supply is positive and set so that the ion beam makes a circular motion. The DC voltage of the mass spectrometric section is set to 0 V so that ions can be stably captured. In this state, the ions generated by the ion source are injected into the ring to accumulate the necessary amount.

Subsequently, the purity of the parent ion is increased if necessary. That is, the operating voltage of the Q mass filter portion is set to a value that allows only the parent ions to pass, and other ions are removed. When the removal of unnecessary ions is completed, the operating voltage of the Q mass filter portion is returned to the original value and ions are stably captured.

Subsequently, a molecular beam is made to enter the ion beam orbit to cause a molecule-ion reaction. After sufficient reaction, the molecular beam is stopped.

Then, in order to enhance the purity of the generated target ions, the Q mass filter section is operated again. The operating voltage is set so that target ions can pass and other unnecessary ions can be removed.

After the above procedure, the power of the ion extraction power supply is switched to 0 or negative, and the ions are extracted from the ion beam extraction path and used.

As the method of use, the target substance is deposited and recovered on the substrate, is used as an ion beam of higher energy by connecting to another accelerating means, or is used in another ion process. .

[0112]

According to the present invention, it is possible to stably accumulate an ion beam having a level of about 1 kiloelectron volt or lower and to perform operations such as acceleration and deceleration. This enables spectroscopic analysis using an ion beam of kiloelectron volts or less, laser cooling of the ion beam, etc., which have not been available until now.

[Brief description of drawings]

FIG. 1 is a diagram defining variables for explaining the principle of strong focusing by a high frequency electric field.

FIG. 2 is a diagram showing definitions of variables that describe ions that orbit in a high-frequency quadrupole ion storage ring.

FIG. 3 is a diagram showing definitions of variables that describe orbiting ions in a high-frequency quadrupole ion storage ring.

FIG. 4 is a diagram showing a structure of an accelerating cavity of the present invention.

FIG. 5 is a diagram showing an example of a high-frequency quadrupole ion storage ring that compensates for centrifugal force.

FIG. 6 is a diagram showing an embodiment of a high-frequency quadrupole ion storage ring provided with an acceleration cavity as an acceleration means.

FIG. 7 is a diagram showing an example of a high-frequency quadrupole ion storage ring having an acceleration function by dividing electrodes.

FIG. 8 is a view showing an electrode structure of an ion branch of the present invention.

FIG. 9 is a diagram showing a method of applying a branch voltage applied to an ion branch.

FIG. 10 is a diagram showing the concept of ion merging.

FIG. 11 is a view showing the concept of an ion molecule reaction device of the present invention.

[Explanation of symbols]

11, 12, 13, 14 ... Quadrupole ring electrode, 15 ... High frequency power supply, 21 ... Standard orbit moving ions, 25 ... Variable DC power supply, 26, 27 ... High impedance connection means (high resistance), 28 ... Standard Ions moving in orbit, 29 ...
Ions moving out of the standard orbit, 30, 31 ... Flat plate electrode, 22 ... Accelerating cavity electrode, 33 ... Accelerating AC power source, 4
DESCRIPTION OF SYMBOLS 1 ... High frequency power supply device, 42 ... Secondary coil, 43 ... Toroidal transformer core, 44 ... Primary coil, 45-48 ... Capacitor, 49-52 ... High impedance connection means, 6
1 to 68 ... Quadrupole ring electrodes, 69 to 72 ... Accelerating means by an acceleration cavity, 73 to 76 ... Linear quadrupole electrodes, 77, 7
8 ... Capacitor, 79 ... Transformer, 80 ... High frequency power supply device, 81-84 ... DC voltage applying means, 91, 92, 9
3, 94 ... Divided quadrupole ring electrode portions 1, 95,
96, 97, 98 ... Divided quadrupole ring electrode portions 2, 99, 100 ... DC voltage application circuit, 101 ... High frequency power supply, 102, 103 ... Acceleration AC transformer secondary coil,
104 ... Transformer core, 105 Acceleration AC transformer primary coil, 106 ... Acceleration AC power supply, 150-158 ... Electrodes forming ion branch, 159 ... Ion focusing high-frequency power supply, 160 ... High impedance connection means, 161, ... DC power supply, 162 ... Ion branching control switch, 171 ... Ion source, 172 ... Q mass mass analysis partial electrode, 173 ... Q mass mass analysis partial drive DC power supply, 174 ... Molecular beam source, 17
5 ... Ion branching partial electrode, 176 ... Ion branching control power supply.

Claims (27)

[Claims] 1. An electrode structure comprising four ring electrodes combined so as to have a quadrupole structure in cross section, and charging by applying a high frequency voltage so that a quadrupole high frequency electric field is formed in the electrode. In a high-frequency quadrupole ion storage ring that accumulates particles inside the electrode, in order to keep the average orbit of the charged particle beam that orbits in the ring constant, a ring electrode is placed between the inner ring electrode and the outer ring electrode. A high-frequency quadrupole ion storage ring, characterized in that a DC voltage that cancels the centrifugal force of ions is superposed through a high-impedance connecting means. 2. In a high frequency quadrupole ion storage ring,
The high frequency quadrupole ion storage ring according to claim 1, further comprising an acceleration means. 3. The high-frequency quadrupole ion storage ring according to claim 2, wherein the ring electrode is cut out at one or a plurality of places, and an accelerating function by an accelerating cavity is inserted therein to realize an accelerating function. 4. A ring electrode is divided into two parts on its diameter line, and an accelerating means by an accelerating cavity is inserted into one of the dividing gaps, and a linear high frequency quadrupole electrode having substantially the same length as the accelerating means is inserted into the other. The high frequency quadrupole ion storage ring according to claim 2. 5. A flat plate electrode having two holes and a cylindrical electrode are sandwiched between two flat plate electrodes so that the three holes are coaxial and the distance between the two electrodes is three. Is an electrode structure in which is sufficiently narrow and arranged at equal intervals, two flat plate electrodes are grounded, and an AC voltage is applied to the cylindrical electrode. 6. A DC voltage applied between an inner electrode and an outer electrode of a storage ring portion having a curvature for compensating a centrifugal force corresponding to ion energy when accelerating and decelerating ions. The high-frequency quadrupole ion storage ring described in 2. 7. A high-frequency quadrupole ion storage ring provided with an acceleration means according to claim 2, wherein the potential on the ion beam orbit of the electrode part of the high-frequency quadrupole ion storage ring is always at ground potential. High-frequency voltage applied to two pairs of electrodes at diagonal positions of the pole can be applied so that they have the same amplitude and opposite phase, and the DC voltage for centrifugal force compensation can be applied to the inner electrode and the outer electrode separately. A high-frequency quadrupole ion storage ring equipped with an acceleration means, which is driven by a power supply device capable of applying a direct-current voltage so that the direct-current potential becomes a ground potential in an ion beam orbit. 8. The high-frequency quadrupole ion storage device according to claim 2, wherein the acceleration / deceleration means is divided into two or more parts of the ring electrode, and an alternating voltage is applied to the divided parts in synchronization with the orbital motion of the ions. ring. 9. The high frequency quadrupole ion storage ring according to claim 8 or 9, wherein an accelerating AC electric field is applied through a transformer. 10. The ion storage ring according to claim 1, wherein a direct-current voltage is applied to a portion of the ion storage ring along the ion beam trajectory to effectively control the ion beam circulation time. 11. An ion beam for branching an ion beam entrance path having a focusing action by a high frequency quadrupole electric field into two or more ion beam exit paths having a similar focusing action in a plane including the same. As a branching method, each quadrupole electrode is arranged so that the two electrodes to which the in-phase high-frequency voltage is applied among the quadrupole electrodes forming each ion beam path are located in the plane, and the branching portion is formed. In order to connect the quadrupole electrodes forming each ion beam entrance / exit path with each other, in the electrode group located in the above plane, the adjacent electrodes of the adjacent ion beam paths are smoothly connected. However, if necessary, the electrodes are divided into a plurality of electrode portions in the middle of the connection to be connected, and in the electrode groups located on both sides of the above-mentioned plane, all are connected along the branch ion beam path. Connect electrodes However, if necessary, a high-frequency wave can be created between the electrode group located in the above plane and the electrode group sandwiching them from both sides by connecting the electrodes by dividing them into multiple electrode parts during the connection. A quadrupole is applied to form a linear orbit with a branch, and a direct current voltage or a pulse voltage is applied to the branch part in order to apply a distribution force to the ion beam and distribute it to an arbitrary ion beam emission path. Ion beam branching method with power supply and electrode structure. 12. Similar two or more ion beam incident paths having a focusing action by a high frequency quadrupole electric field having a bending angle of 90 degrees or less with respect to all ion beam incident directions in a plane including them. As an ion beam merging method for merging into one ion beam emission path having a focusing action, two electrodes to which an in-phase high frequency voltage is applied among the quadrupole electrodes forming each ion beam path are described above. Arranging each quadrupole electrode so as to be located in the plane, in order to connect between the quadrupole electrodes constituting each ion beam entrance / exit path at the branching portion, in the electrode group located in the above plane, Smoothly connect adjacent electrodes of adjacent ion beam paths, and if necessary, connect using electrodes configured by dividing into multiple electrode parts in the middle of connection, and also on both sides of the above plane Electricity In the group, each electrode is connected along the ion beam path of the branching part, but if necessary, the electrodes are divided into a plurality of electrode parts in the middle of the connection, and the electrodes are connected to each other. A high-frequency quadrupole is applied between the positioned electrode group and the electrode group sandwiching them from both sides to form a branched linear trajectory, and the ion beam exit path is uniquely determined by the momentum of the incident ion beam. Ion beam branching method. 13. An ion beam advancing path is extracted in a branched shape from a flat metal plate, and this electrode plate is formed by two separate metal plates from above and below so that the three members are equidistant and the upper and lower electrodes are formed. 13. The ion branching method according to claim 11 or 12, which has an electrode structure sandwiched so that the plate spacing is equal to the width of the ion beam advancing path formed in the flat metal plate electrode. 14. In order to make an applied high-frequency electric field close to a quadrupole electric field in a cross section perpendicular to the ion beam orbit, the electrode shape of the portion facing the ion beam orbit has a structure close to a quadrupole. 14. The ion branching method according to claim 13. 15. The ion branching method according to claim 12, wherein the capacitance of the electrode structure is reduced by removing the electrode plate portion at a position away from the ion beam trajectory. 16. The high-frequency quadrupole ion storage according to claim 1, further comprising one or a plurality of ion injection means or ion extraction means by the branching method according to any one of claims 11 to 15. ring. 17. In addition to the high frequency ion storage ring, ion acceleration and deceleration means, ion injection and extraction means according to any one of claims 1 to 10, an ion source for generating ions and a molecular beam are applied inside the high frequency ion storage ring. Ion-molecule reaction device consisting of a molecular beam generator that ejects toward a part of the ion beam trajectory of the above. 18. In addition to the high frequency ion storage ring, the ion acceleration / deceleration means, the ion injection / extraction means according to any one of claims 1 to 10, an ion source for generating ions, and a laser light flux inside the high frequency ion storage ring. Ion-light reaction device comprising a laser light generator that emits toward a part of the ion beam trajectory of the above. 19. In addition to the high-frequency ion storage ring, the ion acceleration / deceleration means, the ion injection / extraction means according to any one of claims 1 to 16, an ion source for generating ions and an ion beam orbit inside the high-frequency ion storage ring. Ion-electron reaction device consisting of an electron beam generator that emits toward a part of the. 20. An ion-molecule reaction device characterized in that an ion beam and a molecular beam move in parallel at a portion where a part of the ion orbit inside the high-frequency ion storage ring and a molecular beam orbit overlap each other. 21. A high-frequency ion storage ring according to any one of claims 1 to 10, an ion acceleration / deceleration means, an ion injection / extraction means, and an ion source for generating specific ions and a molecular gas introduction device, An ion-molecule reaction device characterized by the collision and reaction of the ion beam inside the high-frequency ion storage ring with the molecular gas. 22. A quadrupole high frequency voltage having an arbitrary voltage value and a quadrupole electrostatic voltage having an arbitrary voltage value can be applied in order to operate a part of the ion storage ring as a Q mass filter. 22. The ion-molecule reaction device according to any one of claims 17 to 21, characterized in that. 23. The ions generated by the ion source are made incident from the ion injection means and accumulated in the ion accumulation ring, and after the accumulation is completed, the unwanted ions are removed by using the mass spectrometric means of claim 20, and then, 23. A series of ions which react with a molecular beam or a molecular gas and subsequently remove unwanted ions other than the target ions generated by using the mass spectrometric means according to claim 22, and then take out the ions from the ion extracting means. -Method of operating the molecular reactor. 24. A method for recovering an ion-molecule reactive substance, wherein the ion generated by the ion-molecule reaction device according to any one of claims 17 to 22 is taken out and deposited to collect on a substrate. 25. Another ion having the ability to accelerate to a higher energy in order to accelerate the ion beam generated and taken out by the ion molecule reactor according to any one of claims 17 to 22 to a higher energy. The method of using the ion molecule reactor according to any one of claims 17 to 23 as an ion source, which is used by being incident on an accelerator. 26. Identification of the surface of a substance by irradiating the surface of the substance with an unstable and highly reactive ionic species produced by the ion-molecule reactor according to any one of claims 17 to 22. A method of using ions generated by an ion-molecule reaction device, which is characterized by modifying a site with a specific molecule. 27. An object of the present invention is to introduce the molecular ions produced by the ion-molecule reaction device according to any one of claims 17 to 22 into cells or living tissues to change the physiological characteristics of the cells or living tissues. Of utilizing ions generated in the ion-molecule reactor.