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JPH0918278A - Piezoelectric resonator and piezoelectric parts using the resonator - Google Patents

Piezoelectric resonator and piezoelectric parts using the resonator

Info

Publication number
JPH0918278A
JPH0918278A JP16645195A JP16645195A JPH0918278A JP H0918278 A JPH0918278 A JP H0918278A JP 16645195 A JP16645195 A JP 16645195A JP 16645195 A JP16645195 A JP 16645195A JP H0918278 A JPH0918278 A JP H0918278A
Authority
JP
Japan
Prior art keywords
piezoelectric
electrode
fine particles
resonator
piezoelectric resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16645195A
Other languages
Japanese (ja)
Other versions
JP3317095B2 (en
Inventor
Yasuhiro Tanaka
康▲廣▼ 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP16645195A priority Critical patent/JP3317095B2/en
Priority to MYPI96002656A priority patent/MY115822A/en
Priority to KR1019960025072A priority patent/KR100219290B1/en
Priority to CN96108292A priority patent/CN1099756C/en
Priority to US08/674,243 priority patent/US6252337B1/en
Publication of JPH0918278A publication Critical patent/JPH0918278A/en
Application granted granted Critical
Publication of JP3317095B2 publication Critical patent/JP3317095B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

PURPOSE: To prevent self-welding between an Ag electrode provided on the surface of a piezoelectric material substrate and a metallic terminal whose surface an Ag film brought into contact with this Ag electrode is provided on. CONSTITUTION: Fine particles 4 having a high melting point are stuck on oscillation electrodes 3 which are provided on front and rear faces of a piezoelectric material substrate 2 and consist of Ag. Ceramics such as an alumina, glass, Ni, Cr, W, Ti, Mo, Ni-Cu (monel), or alloys of these metals are used as materials of these fine particles 4. These fine particles 4 having a high melting point are stuck to or buried in the surface of the oscillation electrode 3 by the sand-blast method, the agitation method, or the like.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、圧電共振子、特に発振
回路やフィルタ回路等を構成する際に使用される圧電共
振子及びこの圧電共振子を用いた圧電部品に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a piezoelectric resonator, and more particularly to a piezoelectric resonator used when constructing an oscillation circuit, a filter circuit and the like, and a piezoelectric component using this piezoelectric resonator.

【0002】[0002]

【従来の技術】圧電部品の一種類として、圧電共振子と
この圧電共振子を保持する金属端子とを備えた構造のも
のが知られている。圧電共振子は、圧電体基板とこの圧
電体基板の表裏面に設けた振動電極や引出し電極を有し
ている。これら振動電極や引出し電極は、通常、Agか
らできている。一方、金属端子はリン青銅等の板材の表
面にAg膜をめっき等の手段にて設けたものである。そ
して、この金属端子を振動電極又は引出し電極に当接さ
せ、圧電共振子を金属端子にて保持している。
2. Description of the Related Art As one type of piezoelectric component, one having a structure including a piezoelectric resonator and a metal terminal for holding the piezoelectric resonator is known. The piezoelectric resonator has a piezoelectric substrate and vibrating electrodes and extraction electrodes provided on the front and back surfaces of the piezoelectric substrate. These vibrating electrodes and extraction electrodes are usually made of Ag. On the other hand, the metal terminal is obtained by providing an Ag film on the surface of a plate material such as phosphor bronze by means such as plating. Then, the metal terminal is brought into contact with the vibrating electrode or the extraction electrode, and the piezoelectric resonator is held by the metal terminal.

【0003】[0003]

【発明が解決しようとする課題】従来の圧電部品にあっ
ては、圧電共振子の振動電極や引出し電極と、金属端子
の表面被覆膜とが両者ともにAgからなっている。とこ
ろが、Agには自己融着し易いという性質があるため、
金属端子が振動電極や引出し電極に接触している部分で
融着が生じることがある。このような場合、圧電共振子
が共振した際に生じる振動エネルギーが金属端子と振動
電極の融着部分に加わり、振動電極の一部が圧電体基板
から引き剥され、振動電極と金属端子との導通不良が起
きるおそれがあった。
In the conventional piezoelectric component, both the vibrating electrode and the extraction electrode of the piezoelectric resonator and the surface coating film of the metal terminal are made of Ag. However, because Ag has a property of easily self-bonding,
Fusing may occur at the portion where the metal terminal is in contact with the vibrating electrode or the extraction electrode. In such a case, vibration energy generated when the piezoelectric resonator resonates is applied to the fusion-bonded portion of the metal terminal and the vibrating electrode, part of the vibrating electrode is peeled off from the piezoelectric substrate, and the vibrating electrode and the metal terminal There was a risk of poor continuity.

【0004】そこで、本発明の目的は、圧電体基板の表
面に設けたAg電極とこのAg電極に当接するAg膜を
表面に設けた金属端子とが融着しにくい圧電共振子及び
この圧電共振子を用いた圧電部品を提供することにあ
る。
Therefore, an object of the present invention is to provide a piezoelectric resonator in which an Ag electrode provided on the surface of a piezoelectric substrate and a metal terminal provided with an Ag film contacting the Ag electrode on the surface are less likely to be fused together, and this piezoelectric resonance. It is to provide a piezoelectric component using a child.

【0005】[0005]

【課題を解決するための手段】以上の目的を達成するた
め、本発明に係る圧電共振子は、(a)圧電体基板と、
(b)前記圧電体基板の表面に設けたAg電極と、
(c)前記Ag電極の表面に設けた高融点の微粒子と、
を備えたことを特徴とする。そして、Ag電極が、Ag
膜を表面に設けた金属端子に弾性的に接点接触すること
が好ましい。
In order to achieve the above objects, a piezoelectric resonator according to the present invention comprises (a) a piezoelectric substrate and
(B) an Ag electrode provided on the surface of the piezoelectric substrate,
(C) High melting point fine particles provided on the surface of the Ag electrode,
It is characterized by having. And the Ag electrode is Ag
It is preferable to elastically make contact with a metal terminal provided with a film on its surface.

【0006】また、本発明に係る圧電部品は、(d)請
求項1又は請求項2に記載された圧電共振子と、(e)
前記圧電共振子のAg電極表面に接触して前記圧電共振
子を保持する、Ag膜を表面に設けた金属端子と、を備
えたことを特徴とする。
A piezoelectric component according to the present invention comprises (d) the piezoelectric resonator according to claim 1 or 2, and (e)
A metal terminal provided with an Ag film on the surface thereof, the metal terminal being in contact with the surface of the Ag electrode of the piezoelectric resonator and holding the piezoelectric resonator.

【0007】[0007]

【作用】以上の構成より、圧電体基板の表面に設けたA
g電極は、高融点の微粒子を中間に介して、金属端子の
Ag膜と接触するため、Ag電極とAg膜の直接接触面
積が少なくなり、Agの自己融着が抑えられる。
With the above structure, A provided on the surface of the piezoelectric substrate
Since the g electrode contacts the Ag film of the metal terminal through the high melting point fine particles in the middle, the direct contact area between the Ag electrode and the Ag film is reduced, and the self-fusion of Ag is suppressed.

【0008】[0008]

【実施例】以下、本発明に係る圧電共振子及びこの圧電
共振子を用いた圧電部品の一実施例について添付図面を
参照して説明する。図1及び図2に示すように、圧電共
振子1は、圧電体基板2と、この圧電体基板2の表裏面
全面に設けた振動電極3と、この振動電極3の表面に付
着した高融点の微粒子4とで構成されている。圧電体基
板2はPZT等のセラミックや水晶やLiTaO3等の
単結晶からなる。振動電極3はAgのスパッタリング、
蒸着あるいは印刷乾燥等の手段にて形成される。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a piezoelectric resonator according to the present invention and a piezoelectric component using the piezoelectric resonator will be described below with reference to the accompanying drawings. As shown in FIGS. 1 and 2, the piezoelectric resonator 1 includes a piezoelectric substrate 2, a vibrating electrode 3 provided on the entire front and back surfaces of the piezoelectric substrate 2, and a high melting point adhered to the surface of the vibrating electrode 3. And fine particles 4 of. The piezoelectric substrate 2 is made of ceramic such as PZT, quartz, or single crystal such as LiTaO 3 . The vibrating electrode 3 is Ag sputtering,
It is formed by means such as vapor deposition or print drying.

【0009】高融点の微粒子4は、振動電極3より融点
の高い材料、例えばアルミナ等のセラミックやガラス、
あるいはNi,Cr,W,Ti,Mo,Ni−Cu(モ
ネル)等及びこれらの合金が用いられる。高融点の微粒
子4は、例えばサンドブラスト法にて微粒子4を振動電
極3の表面に吹き付けられることにより、振動電極3の
表面に付着したり、または振動電極3に埋め込まれたり
する。あるいは、高融点の微粒子4は、撹拌法にて微粒
子4と圧電共振子1を同じ容器に入れてかき回されるこ
とにより、振動電極3の表面に付着したり、又は振動電
極3に埋め込まれたりする。ここに、サンドブラスト法
や撹拌法によって微粒子4が振動電極3に埋め込まれる
のは、振動電極3が金属の中では比較的柔らかいAgか
らなるためである。微粒子4を振動電極3に埋め込め
ば、微粒子4が絶縁性のものであっても振動電極3と後
述の金属端子との電気的接続不良を起こさないし、微粒
子4が振動電極3から脱落する心配もなくなる。そし
て、この高融点の微粒子4は、振動電極3の特性を損な
わない程度の密度で振動電極3に設けられるものとす
る。
The fine particles 4 having a high melting point are made of a material having a higher melting point than the vibrating electrode 3, such as ceramics such as alumina or glass,
Alternatively, Ni, Cr, W, Ti, Mo, Ni-Cu (monel), etc., and alloys thereof are used. The fine particles 4 having a high melting point are attached to the surface of the vibrating electrode 3 or embedded in the vibrating electrode 3 by spraying the fine particles 4 on the surface of the vibrating electrode 3 by, for example, a sandblast method. Alternatively, the high melting point fine particles 4 are attached to the surface of the vibrating electrode 3 or embedded in the vibrating electrode 3 by stirring the fine particle 4 and the piezoelectric resonator 1 in the same container by a stirring method. . The reason why the fine particles 4 are embedded in the vibrating electrode 3 by the sandblast method or the stirring method is that the vibrating electrode 3 is made of Ag, which is relatively soft among metals. If the fine particles 4 are embedded in the vibrating electrode 3, even if the fine particles 4 are insulative, the electrical connection between the vibrating electrode 3 and a metal terminal described later does not occur, and there is a concern that the fine particles 4 may fall off the vibrating electrode 3. Disappear. The high melting point fine particles 4 are provided on the vibrating electrode 3 at a density that does not impair the characteristics of the vibrating electrode 3.

【0010】さらに、必要であれば、サンドブラスト法
や撹拌法等で高融点の微粒子4が付着した振動電極3を
洗浄、あるいは機械的にこすったり、振動を加えてふる
い落としたりすることによって、余分な微粒子4を除去
し、振動電極3の凹部に微粒子4が配設されるようにし
て、振動電極3の表面を平滑化する。なお、高融点の微
粒子4の粒形や形状は任意であり、仕様により種々に変
更される。
Further, if necessary, the vibrating electrode 3 to which the fine particles 4 having a high melting point are attached by a sand blast method, a stirring method or the like is washed, mechanically rubbed, or shaken to remove excess. The fine particles 4 are removed, and the fine particles 4 are arranged in the concave portions of the vibrating electrode 3 to smooth the surface of the vibrating electrode 3. The particle shape and the shape of the high melting point fine particles 4 are arbitrary, and are variously changed according to the specifications.

【0011】図3は、こうして得られた圧電共振子1を
用いて組み立てた共振器9を示す。この共振器9はKH
z帯で動作するもので、内ケース10に金属端子11、
圧電共振子1、金属端子13を重ねて収容し、内ケース
10の開口部を内蓋14で閉じ、さらに外ケース15で
被覆し、シール樹脂16で封止したものである。圧電共
振子1は金属端子11と金属端子13にて表裏面中央部
分を挟持され、拡がり振動モードにて振動する。金属端
子11,13はリン青銅等の板材の表面にAg膜をめっ
き等の手段にて設けたものである。金属端子11,13
は、ばね性を有し、圧電共振子1に弾性的に接点接触し
ている。
FIG. 3 shows a resonator 9 assembled using the piezoelectric resonator 1 thus obtained. This resonator 9 is KH
It operates in the z band, and the inner case 10 has metal terminals 11,
The piezoelectric resonator 1 and the metal terminal 13 are housed in an overlapping manner, the opening of the inner case 10 is closed with an inner lid 14, further covered with an outer case 15, and sealed with a sealing resin 16. The piezoelectric resonator 1 is sandwiched between the metal terminals 11 and 13 at the front and back central portions thereof and vibrates in a spreading vibration mode. The metal terminals 11 and 13 are obtained by providing an Ag film on the surface of a plate material such as phosphor bronze by means such as plating. Metal terminals 11, 13
Has a spring property and is elastically in contact with the piezoelectric resonator 1 as a contact.

【0012】以上の構造の共振器9において、圧電共振
子1の振動電極3は、高融点の微粒子4を中間に介して
金属端子11,13と接触するため、振動電極3と金属
端子11,13との直接接触面積が少なく、振動電極3
のAgと金属端子11,13のAgが自己融着しにくく
なり、圧電共振子1が共振した際に生じる振動エネルギ
ーが振動電極3と金属端子11,13の接触部分に加わ
っても、振動電極3の一部が圧電体基板2から引き剥さ
れる心配がない。
In the resonator 9 having the above structure, the vibrating electrode 3 of the piezoelectric resonator 1 comes into contact with the metal terminals 11 and 13 through the high melting point fine particles 4 in the middle, so that the vibrating electrode 3 and the metal terminal 11 and The direct contact area with 13 is small and the vibrating electrode 3
Of Ag and the metal terminals 11 and 13 are less likely to self-bond, and even if vibration energy generated when the piezoelectric resonator 1 resonates is applied to the contact portion between the vibration electrode 3 and the metal terminals 11 and 13, There is no concern that a part of 3 will be peeled off from the piezoelectric substrate 2.

【0013】なお、本発明に係る圧電共振子及びこの圧
電共振子を用いた圧電部品は前記実施例に限定するもの
ではなく、その要旨の範囲内で種々に変更することがで
きる。特に、高融点の微粒子は、圧電体基板のAg電極
の表面全面に必らずしも付着させる必要はなく、金属端
子が接触する部分に局所的に付着させるものであっても
よい。
The piezoelectric resonator according to the present invention and the piezoelectric component using the piezoelectric resonator are not limited to those in the above embodiment, but can be variously modified within the scope of the invention. In particular, the fine particles having a high melting point do not necessarily need to be attached to the entire surface of the Ag electrode of the piezoelectric substrate, and may be locally attached to a portion in contact with the metal terminal.

【0014】[0014]

【発明の効果】以上の説明で明らかなように、本発明に
よれば、圧電共振子のAg電極の表面に高融点の微粒子
を設けたので、Ag電極は高融点の微粒子を中間に介し
てAg膜を表面に設けた金属端子と接触することにな
り、Ag電極とAg膜の直接接触面積が少なくなり、A
gの自己融着が生じにくい。この結果、Ag電極の一部
が圧電体基板から引き剥される等の不具合が少なくな
り、Ag電極と金属端子の電気的接続信頼性が向上す
る。
As is apparent from the above description, according to the present invention, since the high melting point fine particles are provided on the surface of the Ag electrode of the piezoelectric resonator, the Ag electrode has the high melting point fine particles interposed therebetween. Since the Ag film comes into contact with the metal terminal provided on the surface, the direct contact area between the Ag electrode and the Ag film is reduced, and
g self-fusing is less likely to occur. As a result, problems such as the peeling of a part of the Ag electrode from the piezoelectric substrate are reduced, and the reliability of electrical connection between the Ag electrode and the metal terminal is improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る圧電共振子の第1実施例を示す断
面図。
FIG. 1 is a sectional view showing a first embodiment of a piezoelectric resonator according to the present invention.

【図2】図1に示した圧電共振子の振動電極の一部拡大
断面図。
FIG. 2 is a partially enlarged sectional view of a vibrating electrode of the piezoelectric resonator shown in FIG.

【図3】図1に示した圧電共振子を用いた圧電部品を示
す断面図。
FIG. 3 is a sectional view showing a piezoelectric component using the piezoelectric resonator shown in FIG.

【符号の説明】[Explanation of symbols]

1…圧電共振子 2…圧電体基板 3…振動電極(Ag電極) 4…高融点の微粒子 9…共振器(圧電部品) 11,13…金属端子 DESCRIPTION OF SYMBOLS 1 ... Piezoelectric resonator 2 ... Piezoelectric substrate 3 ... Vibration electrode (Ag electrode) 4 ... High melting point fine particles 9 ... Resonator (piezoelectric component) 11, 13 ... Metal terminals

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 圧電体基板と、 前記圧電体基板の表面に設けたAg電極と、 前記Ag電極の表面に設けた高融点の微粒子と、 を備えたことを特徴とする圧電共振子。1. A piezoelectric resonator comprising: a piezoelectric substrate; an Ag electrode provided on the surface of the piezoelectric substrate; and high-melting point fine particles provided on the surface of the Ag electrode. 【請求項2】 前記Ag電極が、Ag膜を表面に設けた
金属端子に弾性的に接点接触する部分を表面に有してい
ることを特徴とする請求項1に記載の圧電共振子。
2. The piezoelectric resonator according to claim 1, wherein the Ag electrode has a portion on its surface that elastically makes contact with a metal terminal provided with an Ag film on its surface.
【請求項3】 請求項1又は請求項2に記載された圧電
共振子と、 前記圧電共振子のAg電極表面に接触して前記圧電共振
子を保持する、Ag膜を表面に設けた金属端子と、 を備えたことを特徴とする圧電部品。
3. The piezoelectric resonator according to claim 1 or 2, and a metal terminal provided with an Ag film on the surface, which holds the piezoelectric resonator by contacting the Ag electrode surface of the piezoelectric resonator. , And a piezoelectric component.
JP16645195A 1995-06-30 1995-06-30 Piezoelectric resonator and piezoelectric component using this piezoelectric resonator Expired - Lifetime JP3317095B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP16645195A JP3317095B2 (en) 1995-06-30 1995-06-30 Piezoelectric resonator and piezoelectric component using this piezoelectric resonator
MYPI96002656A MY115822A (en) 1995-06-30 1996-06-28 Piezoelectric resonator and piezoelectric components using the same
KR1019960025072A KR100219290B1 (en) 1995-06-30 1996-06-28 Piezoelectric resonator and piezoelectric parts using the resonator
CN96108292A CN1099756C (en) 1995-06-30 1996-06-29 Piezoelectric vibrator and piezoelectric parts using the same
US08/674,243 US6252337B1 (en) 1995-06-30 1996-07-01 Piezoelectric resonator and piezoelectric components using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16645195A JP3317095B2 (en) 1995-06-30 1995-06-30 Piezoelectric resonator and piezoelectric component using this piezoelectric resonator

Publications (2)

Publication Number Publication Date
JPH0918278A true JPH0918278A (en) 1997-01-17
JP3317095B2 JP3317095B2 (en) 2002-08-19

Family

ID=15831653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16645195A Expired - Lifetime JP3317095B2 (en) 1995-06-30 1995-06-30 Piezoelectric resonator and piezoelectric component using this piezoelectric resonator

Country Status (1)

Country Link
JP (1) JP3317095B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0860943A2 (en) * 1997-02-20 1998-08-26 Murata Manufacturing Co., Ltd. Surface acoustic wave device
JP2005039261A (en) * 2003-06-30 2005-02-10 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device and display device
JP2009295897A (en) * 2008-06-09 2009-12-17 Murata Mfg Co Ltd Metal film, electronic component, and method for manufacturing electronic component

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0860943A2 (en) * 1997-02-20 1998-08-26 Murata Manufacturing Co., Ltd. Surface acoustic wave device
EP0860943B1 (en) * 1997-02-20 2003-05-07 Murata Manufacturing Co., Ltd. Surface acoustic wave device
JP2005039261A (en) * 2003-06-30 2005-02-10 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device and display device
JP4619050B2 (en) * 2003-06-30 2011-01-26 株式会社半導体エネルギー研究所 Method for manufacturing display device
JP2009295897A (en) * 2008-06-09 2009-12-17 Murata Mfg Co Ltd Metal film, electronic component, and method for manufacturing electronic component

Also Published As

Publication number Publication date
JP3317095B2 (en) 2002-08-19

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