JPH09181985A - Ccd image pickup device and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide the CCD image pickup element with high sensitivity and its manufacture by providing an on-chip lens structure with a high light collection rate. SOLUTION: In the CCD image pickup element 40, a surface of an Si substrate 11 is not flat and pairs of recessed part and projection are formed on a substrate surface in the same itch as a itch of pixel arrangement and an insulating film 13 is formed on the substrate surface along the recessed part and the projection. A light receiving section 24 and a hole storage section 25 are laminated sequentially as a sensor section under the insulating film 13 of projections, and a vertical transfer section 21 and a transfer barrier section 22 are laminated sequentially as a vertical transfer section under the insulating film 13 of the recessed areas. Moreover, a transfer electrode 31 and an electrode insulation film 32 are formed on the insulating film 13 of the recessed areas so as to be imbedded in the recessed part and an upper face of the transfer electrode 31 and an upper face of the insulating film 13 of the projection areas are formed to be nearly mated. Thus, the distance from the substrate to the lower face of the on-chip lens is reduced.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a CCD type image pickup device and a method of manufacturing the same, and more particularly, a CCD type image pickup device having a small dependence of a light collection rate on a camera lens aperture value and a high sensitivity, and a method of manufacturing the same. It is about.

[0002]

2. Description of the Related Art When a CCD element is used as an image pickup element, the light receiving area of the CCD element is relatively small compared to the entire area of the element, and the sensitivity of the image pickup element deteriorates as it is. The sensitivity is improved by providing it on the light receiving part of the device to improve the light collection rate.

Here, a laminated structure of effective pixels of a conventional CCD type image pickup device will be described. FIG. 18 is a schematic sectional view of a substrate showing a laminated structure of effective pixels of a conventional CCD type image pickup device. In order to manufacture the conventional CCD type image pickup device shown in FIG. 18, first, a photoresist layer (not shown) is formed on the substrate 11 having the overflow barrier layer 12 and the oxide insulating film 13.
And a desired pattern is formed by photolithography, and using this as a mask, an n-type vertical transfer portion 21 is formed by primary ion implantation, and a transfer barrier portion 22 made of a p ^- well is formed by secondary ion implantation. Each is formed.
After the ion implantation step, a vertical transfer electrode 31 made of polysilicon, a p ⁺ type hole accumulation part 25, an n type light receiving part 24 and an electrode insulating film 32 made of a polysilicon oxide film are formed, and PSG is further formed. Film 33 and Al light-shielding film 3
4 is formed. Finally, when the on-chip lens 35 is formed on the substrate surface with an organic material such as plastic, a CCD type image sensor effective pixel having a laminated structure as shown in FIG. 18 can be obtained. In FIG. 18, 23 is a p ^- type read barrier section, 26 is a channel stop, and hplan
An organic planarization film, an on-chip color filter, etc. are laminated on the layer whose height is indicated by er.

[0004]

By the way, in order to improve the sensitivity of the CCD type image pickup device, it is necessary to increase the light collection rate by the on-chip lens to increase the amount of light incident on the sensor section. In the conventional CCD image pickup device, the light collection rate is limited to about 2 to 3 times at most for the reason described below. First, in order to increase the light collection rate, it is necessary to form the on-chip lens into a shape that allows easy collection of light, but there are restrictions on the refractive index, viscosity, curing characteristics, etching characteristics, etc. On-chip lens Since the types of organic materials that can be used as the material of the lens are limited, and the range of the curvature that is allowed in forming the on-chip lens is limited, the height of the on-chip lens described below. Considering the limitation of 1 and the width of the pixel, there is very little room to improve the shape of the on-chip lens. Second
In order to manufacture a CCD type image pickup device with good characteristics, it is necessary to flatten each layer of the laminated structure.
In order to secure the film thickness necessary for flattening in the conventional laminated structure of the CCD type image pickup device, the height hocl from the Si substrate surface of the on-chip lens is limited. For flattening, the height of the on-chip lens should be at least about 5μ.
m is necessary, and it is technically difficult to make it less than m.

Therefore, in the conventional laminated structure of the CCD type image pickup device, when the on-chip lens lens curvature and the on-chip lens height are set to determine the shape of the on-chip lens, the aperture of the camera lens is within a practical range. It was unavoidable to set these values in a numerical range that would fit and obtain a well-balanced imaging characteristic, and design the shape of the on-chip lens based on these values. With this, when the aperture ratio of the light receiving portion is 20%, ideally, the light collection ratio should be 5 times, but as described above,
Usually, it was possible to achieve only a light collection ratio of about 2-3 times. Therefore, a CCD type image pickup device having a new laminated structure capable of improving the sensitivity of the CCD type image pickup device by eliminating the dependency of the light collection rate of the on-chip lens on the aperture value of the camera lens, so-called f-value dependency, and the same. The development of manufacturing methods has been awaited.

In view of the above situation, the object of the present invention is to
It is an object of the present invention to provide a highly sensitive CCD-type image pickup device having an on-chip lens structure having a high light collection rate and a method for manufacturing the same.

[0007]

As a result of research, the inventor of the present invention has found that in the laminated structure of the CCD type image pickup device shown in FIG. 18, as shown in FIG.
2, light receiving section 24, hole accumulating section 25, read gate section 23, and cell separating section, that is, channel stop 26.
Are all formed in the Si substrate 11 having a flat surface, the distance from the insulating film 13 of the Si substrate 11 to the lower surface of the on-chip lens 35 (indicated by hocl in the figure) becomes large. It was found that the dependence of the light collection rate on the aperture value of the camera lens becomes large together with the limitation of the curvature of the lens. Therefore, the present inventor reduces the on-chip lens height (hocl) shown in FIG. 18 to achieve an on-chip lens structure having a high light-collecting rate, even when the f value is small. The inventors have found that the imaging characteristics can be improved so that sensitivity can be obtained, and have completed the present invention.

In order to achieve the above object, based on the above findings, the CCD type image pickup device according to the present invention comprises a vertical transfer portion and a sensor portion which are alternately formed under an insulating film formed on a substrate. In a CCD image pickup device further comprising a vertical transfer electrode provided on the vertical transfer portion via an insulating film, a pair of a concave portion and a convex portion is formed on the substrate surface at the same pitch as the pixel array pitch, and the insulating film is formed. Is formed on the substrate surface along the irregularities of the concave and convex portions, and the vertical transfer portion is formed under the insulating film in the concave region,
The sensor portion is formed below the insulating film in the convex region, and the vertical transfer electrode is formed above the insulating film in the concave region.

In the present invention, for example, a Si substrate can be used regardless of the type of substrate. Further, preferably, the vertical transfer electrode is embedded in the concave portion so that the upper surface of the vertical transfer electrode has substantially the same height as the upper surface of the insulating film in the convex portion region. With the above configuration, the thickness hplaner from the light shielding film of the CCD type image pickup device to the on-chip lens is kept the same as that of the conventional CCD type image pickup device, and from the upper surface of the insulating film of the substrate to the lower surface of the on-chip lens. Since the distance can be shortened by the thickness of the vertical transfer electrode as compared with the conventional CCD type image pickup device, it is possible to realize a CCD type image pickup device having a high light collection rate and good sensitivity.

A method of manufacturing a CCD type image pickup device according to the present invention (hereinafter referred to as a first invention method) is the same as the method of manufacturing a CCD type image pickup device in which a vertical transfer section, a sensor section and a vertical transfer electrode are provided on a substrate. When forming, the height difference between the bottom of the concave portion and the top of the convex portion is almost equal to the thickness of the vertical transfer electrode, and a pair of concave portion and convex portion is formed on the substrate surface at the same pitch as the pixel array, and then along the unevenness. To form an insulating film on the substrate surface, to form a vertical transfer portion by performing ion implantation in the recessed region, and to form an electrode layer for forming a vertical transfer electrode on the substrate surface along the unevenness. And a step of flattening the electrode layer by etching the electrode layer by CMP while removing the electrode layer in the convex region, a step of forming a sensor part forming mask pattern on the flattened electrode layer, and a sensor Use a mask pattern To etch the electrode layer of the convex region, then it is characterized by comprising a step of forming a sensor portion by ion implantation.

Another method of manufacturing a CCD type image pickup device according to the present invention (hereinafter referred to as a second invention method) is a method of manufacturing a CCD type image pickup device, which is a substrate of a method of manufacturing a CCD type image pickup device. When forming the vertical transfer section, the sensor section and the vertical transfer electrodes, the substrate surface is etched to form recesses in which the vertical transfer electrodes can be embedded at the same pitch as the arrangement of the vertical transfer electrodes, and then the substrate surface including the recesses is formed. A step of forming an insulating film on the substrate, a step of forming a vertical transfer portion by performing ion implantation in the recessed area, and an electrode layer for forming the vertical transfer electrode on the substrate so as to fill the recessed area. And a step of etching the electrode layer by a CMP method to remove the electrode layer on the region between the concave portions and flattening the substrate surface, and forming a mask pattern for forming a sensor portion on the substrate surface. And that step is characterized by comprising a step of forming a sensor portion by ion implantation in the region between the recess and the recess using a mask pattern for the sensor unit forming.

According to the method of the second invention, the patterning of the electrode layer, which is required in the method of the first invention, becomes unnecessary. Also,
In the method of the first invention, for example, the LOCOS method is used to provide the unevenness on the substrate surface. The etching (polishing) conditions by the CMP method in the first and second invention methods are determined according to the constituent material of the electrode layer.

[0013]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. Example 1 of CCD type image pickup device This example is a first example of the CCD type image pickup device according to the present invention, and FIG. 1 is a schematic sectional view showing a laminated structure of the example 1. Of the layers constituting the laminated structure shown in FIG. 1, FIG.
The same layers as those of 1 are denoted by the same reference numerals, and the description thereof will be omitted. In the CCD type image pickup device 40 of the present embodiment, unlike the conventional CCD type image pickup device 10 shown in FIG. 18, the surface of the Si substrate 11 is not flat, and the pair of the concave portion and the convex portion corresponds to the pixel array pitch. The insulating film 13 is formed on the substrate surface at the same pitch.
Are formed on the surface of the substrate along the irregularities of the concave and convex portions. Below the insulating film 13 in the convex region, as a sensor unit,
The light receiving portion 24 and the hole accumulating portion 25 are sequentially formed by stacking, and a vertical transfer portion 21 and a transfer barrier portion 22 as vertical transfer portions are formed under the insulating film 13 in the recess region.
It is formed by sequentially stacking. In addition, the transfer electrode 31 and the electrode insulating film 32 are formed on the insulating film 13 in the recessed region so as to be embedded in the recess, and the upper surface of the transfer electrode 31 and the upper surface of the insulating film 13 in the protruding region are formed. Are formed so that they are almost at the same height.

With the above structure, in the first embodiment, the distance from the light shielding film 34 to the lower surface of the on-chip lens (hereinafter simply referred to as OCL) 35 (hpl in FIGS. 1 and 18).
(displayed as aner) is maintained at the same distance as that of the conventional CCD type image pickup device 10, and from the insulating film 13 of the Si substrate 11 to OCL3.
5 The distance Hocl 1 to the bottom surface of the conventional CCD image sensor 1
The thickness of the vertical transfer electrode 31 can be made smaller than that of hocl of 0. As a result, the dependency of the OCL light collection rate on the camera lens diaphragm is weakened, and the sensitivity is increased even when the f value is small. The layer whose height is represented by hplaner is a layer in which a flattening film, an on-chip color filter (hereinafter abbreviated as OCCF), etc. are laminated.

Method for Manufacturing CCD Image Pickup Device of Embodiment 1 The CCD shown in FIG. 1 will be described below with reference to FIGS. 2 to 10.
A method of manufacturing the image pickup device will be described. First, as shown in FIG. 2, a pair of a concave portion and a convex portion is formed on the surface of the Si substrate 11 by the LOCOS method or the like at the same pitch as the cell pitch. Next, a photoresist layer 41 is formed, and g
Line, i-line, excimer laser or the like is used for exposure and development to form a photomask 41 having a predetermined opening pattern in the recessed region of the substrate 11. Further, the photomask 41 is used to perform a primary ion implantation to n. The mold vertical transfer portion 21 is formed.

Next, as shown in FIG. 3, a transfer barrier portion 22 made of a p-well is formed below the vertical transfer portion 21 by secondary ion implantation using the same photomask 41. Next, after removing the photomask 41, as shown in FIG. 4, a polysilicon film 31 is formed along the unevenness of the substrate 11 with the same film thickness.

Then, as shown in FIG.
The polysilicon film 31 is etched by using the (Chemical Mechanical Polishing) method. Etching depth is C
By controlling the MP processing time, or (display film thickness in Tox) thick SiO ₂ film 36 in the region other than the imaging area of the substrate 11 to a pre-formed, yet SiN (thickness on the SiO ₂ film h- Tox) 37 is formed, etching is performed using the SiN layer 37 as a stopper, and the layer thickness is appropriately measured, so that the thickness can be adjusted. When the CMP method is applied, the processing conditions such as the pad material, the pad structure, the processing pressure and the rotation speed of the pad, are determined by actually etching the polysilicon film. Normally, the vertical transfer electrode 31
For this, a polysilicon film having a film thickness of about 200 to 1000 nm is used. Although the grinding depth of the polysilicon film 31 varies depending on the unevenness depth of the surface of the substrate 11, when the thickness of the polysilicon film 31 is 500 nm, it is 100 to 2
It may be about 00 nm. In the case of general CMP method, 6
It is said that a grinding uniformity of about 0.15 μm is ensured at a wafer diameter of up to 8 inches, but it is 0.10 μm in a local area such as an imaging area within one chip of a CCD type image sensor. The following grinding depth accuracy can be obtained.

Next, a photoresist layer 42 is formed, and then, by photolithography, as shown in FIG.
A photomask 42 having a mask pattern having an opening in one convex region is formed. Then, for example, the RIE method (Re
Using active ion etching, the polysilicon film 31 is etched to form a vertical transfer electrode 31 having a predetermined shape as shown in FIG. 7. Further, ion implantation is performed using the same photomask 42, and p ⁺ The mold hole accumulating portion 25 is formed. Then, as shown in FIG. 8, the same photomask 42 is used.
Is used to form the n-type light receiving portion 24.

Next, the photomask 43 is removed, and further,
As shown in FIG. 9, an electrode insulating film 32 made of SiO _{2 is} formed on the vertical transfer electrode 31 by a thermal oxidation method or a CVD method, and then a planarizing film PSG33 having a passivation effect is deposited thereon. . SiO ₂ on the sensor
In order to improve the film quality of the film, a method of removing only the SiO ₂ film on the sensor portion by wet etching or the like and re-thermally oxidizing it to form a new SiO ₂ film may be used.

Next, as shown in FIG. 10, a light shielding film 34 is formed using Al, W or the like. Subsequently, patterning is performed to form a sensor opening 44 on the sensor portion as shown in FIG. 1, and after depositing SiO ₂ or SiN by a plasma method, an organic planarizing film is deposited to obtain a known pattern. An on-chip color filter (hereinafter, OCCF) or OCL35 is formed by the method. Thereby, the CCD type image pickup device 40 according to the present invention shown in FIG. 1 can be obtained. FIG.
The illustration of these planarization layers and OCCF is omitted.

The OCL height Hocl 1 of the CCD type image pickup device 40 of FIG. 1 is larger than that of the CCD type image pickup device 10 of FIG.
While maintaining the thickness hplaner of the planarization film layer and the color filter (OCCF) layer to be the same, h _OCL > H _OCL 1
Therefore, the CCD type image pickup device 40 according to the method of the present invention has the thickness of the vertical transfer electrode 31 which is larger than that of the conventional example.
The distance to is decreasing. The flattening using the CMP method may be performed after patterning the transfer electrode and further after the subsequent thermal oxidation.

Example 2 of CCD type image pickup device This example is another example of the CCD type image pickup device according to the present invention. FIG. 12 is a schematic sectional view showing a laminated structure of Example 2 of the CCD type image pickup device according to the present invention. Of the layers constituting the laminated structure shown in FIG. 12, the same layers as those in FIGS. 1 and 18 are designated by the same reference numerals, and the description thereof will be omitted. In the CCD type image pickup device 50 of the present embodiment, recesses of a size large enough to embed the vertical transfer electrodes 31 are formed in the surface of the Si substrate 11 at the same pitch as the arrangement of the vertical transfer electrodes 31, and the insulating film 13 is recessed. Is formed on the surface of the substrate. A light receiving portion 24 and a hole accumulating portion 25 are sequentially laminated and formed as a sensor portion below the insulating film 13 in the region between the recesses, and below the insulating film 13 in the recessed region, As the vertical transfer unit, the vertical transfer unit 21 and the transfer barrier unit 22 are sequentially stacked and formed. In addition, the insulating film 13 in the recess
The transfer electrode 31 and the electrode insulating film 32 are formed on the upper side in a form of being buried in the recess, and the upper surface of the transfer electrode 31 and the upper surface of the insulating film 13 on the light receiving portion 24 are substantially at the same height. Is formed.

With the above configuration, in the second embodiment, the distance from the light shielding film 34 to the lower surface of the on-chip lens (hereinafter simply referred to as OCL) 35 (hpl in FIGS. 1 and 18).
(displayed as aner) is maintained at the same distance as that of the conventional CCD type image pickup device 10, and from the insulating film 13 of the Si substrate 11 to OCL3.
5 The height Hocl 2 up to the bottom surface of the conventional CCD image pickup device 1
The thickness of the vertical transfer electrode 31 can be made lower than that of hocl of 0. The layer whose height is represented by hplaner is a flattening film and an on-chip color filter (hereinafter referred to as O
(Abbreviated as CCF) and the like.

Method of Manufacturing CCD Image Pickup Device of Embodiment 2 First, as shown in FIG. 12, the Si substrate 11 is etched to embed the transfer electrodes 31 at the same pitch as the arrangement of the vertical transfer electrodes 31 of FIG. The recess 52 of the size that can be
The insulating film 13 is formed on the surface of the substrate 11, and then the vertical transfer portion 21 and the transfer barrier portion 2 are formed by ion implantation.
2 is formed below the recess 52 with the insulating film 13 interposed therebetween. Next, as shown in FIG. 13, a polysilicon film 31 is formed as a transfer electrode material on the entire surface of the substrate so as to fill the recesses 52.

Next, as in the first embodiment, as shown in FIG. 14, the CMP method is used to etch the polysilicon film 31 in the region between the recesses 52 up to the insulating film 13 while the substrate surface is being etched. And the vertical transfer electrode 31 is formed so as to be flattened and embedded in the recess 52. As shown in FIG. 15, the upper surface of the vertical transfer electrode 31 after the flattening is at substantially the same height as the insulating film 13 other than the recessed region 50 of the substrate 11. Moreover, with this method, the patterning of the transfer electrode 31 performed in the first embodiment is unnecessary, and the manufacturing process can be simplified.

Next, as shown in FIG. 16, an electrode insulating film 32 made of SiO ₂ is formed by using a thermal oxidation method or a CVD method. Note that it may be omitted depending on the grinding depth of CMP. Subsequently, as shown in FIG. 17, a passivation film 33 is formed and a light shielding film 34 is further deposited. still,
In this embodiment, since the planarization is already sufficiently performed at the stage shown in FIG. 15, there is an advantage that a material specialized for the passivation function can be selected as a material for forming the film 33. Next, by forming OCCF and OCL, a CCD type image pickup device 50 as shown in FIG. 11 can be obtained.

Similar to Example 1, the C formed in this Example
Also in the CD type image pickup device 50, the upper surface of the vertical transfer electrode 31 is at the same height as the upper surface of the insulating film 13 on the light receiving portion 24. As a result, the OCL height Hoc of the CCD type image pickup device 50 of FIG.
l 2 is the thickness hplan of the flattening film and the color filter (OCCF) as compared with the CCD type image pickup device 10 of FIG.
While maintaining er at the same thickness, h _OCL > H _OCL 2,
In the CCD image pickup device 50 according to the method of the present invention, the distance to the OCL is reduced by at least the thickness of the vertical transfer portion 31 as compared with the conventional example.

[0028]

According to the CCD type image pickup device of the present invention, a pair of a concave portion and a convex portion is formed on the substrate surface at the same pitch as the pixel array pitch, and an insulating film is formed along the concave and convex portions of the concave portion and the convex portion. The vertical transfer portion is formed on the surface of the substrate, the vertical transfer portion is formed under the insulating film in the concave portion area, the sensor portion is formed under the insulating film in the convex portion area, and the vertical transfer electrode is formed on the insulating film in the concave portion area.
As a result, the upper surface of the vertical transfer portion can be made substantially at the same height as the upper surface of the insulating film in the convex region, and (1) Therefore, the distance from the substrate to the lower surface of the on-chip lens can be shortened. Compared with the image pickup device, the dependency of the light collection rate on the aperture value of the camera lens is reduced, and, for example, the sensitivity reduction phenomenon when the f value is small can be suppressed. Also,
(2) Since the height of the vertical transfer electrode is almost the same as the height of the sensor portion, the coverage at the time of forming the passivation film is improved, the generation of vacancies is suppressed, and the local increase in the electric field strength is eliminated. Readout characteristics are improved, such as a reduction in leakage current value. Further, (3) since the height of the vertical transfer electrode is almost the same as the height of the sensor portion, the coverage of the light shielding film is improved, stress (film stress) is relaxed, hillock generation is suppressed, and sensor opening processing is performed. Improved uniformity,
The sensitivity uniformity of each cell can be improved. The method of the present invention realizes a preferable method of manufacturing the CCD image pickup device of the present invention.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view showing a laminated structure of effective pixels of a first embodiment of a CCD image pickup device according to the present invention.

FIG. 2 is a schematic sectional view of a substrate showing a state in which a vertical transfer unit is formed.

FIG. 3 is a schematic cross-sectional view of a substrate showing a state in which a transfer barrier section is formed.

FIG. 4 is a schematic cross-sectional view of a substrate showing a state in which an electrode layer for forming a vertical transfer electrode is formed.

FIG. 5 is a schematic cross-sectional view of a substrate illustrating a state of polishing by a CMP method.

FIG. 6 is a schematic sectional view of a substrate showing a state in which a photomask is formed on a flattened electrode layer.

FIG. 7 is a schematic cross-sectional view of a substrate showing a state where a hole accumulating portion of a sensor portion is formed.

FIG. 8 is a schematic cross-sectional view of a substrate showing a state in which a light receiving section of a sensor section is formed.

FIG. 9 is a schematic cross-sectional view of a substrate showing a state in which a PSG film has been formed.

FIG. 10 is a schematic cross-sectional view of a substrate showing a state where a light shielding film is formed.

FIG. 11 is a schematic cross-sectional view showing a laminated structure of effective pixels of a second embodiment of the CCD image pickup device according to the present invention.

FIG. 12 is a schematic cross-sectional view of a substrate showing a state where a recess is formed in the substrate and a vertical transfer portion and a transfer barrier portion are formed.

FIG. 13 is a schematic sectional view of a substrate showing a state in which an electrode layer for forming a vertical transfer electrode has been formed.

FIG. 14 is a schematic cross-sectional view of a substrate for explaining how it is polished and flattened by a CMP method.

FIG. 15 is a schematic sectional view of a substrate showing a state of being flattened by a CMP method.

FIG. 16 is a schematic sectional view of a substrate showing a state in which an electrode insulating film is formed.

FIG. 17 is a schematic sectional view of a substrate showing a state in which a PSG film and a light shielding film have been formed.

FIG. 18 is a schematic cross-sectional view of a substrate showing a laminated structure of effective pixels of a conventional CCD image sensor.

[Explanation of symbols]

11 Si substrate 12 Overflow barrier layer 13 Insulating film 21 Vertical transfer part 22 Transfer barrier part 23 Read barrier part 24 Light receiving part 25 Hole accumulating part 26 Channel stop 31 Vertical transfer electrode 32 Insulating film 33 PSG film 34 Light-shielding film 35 On-chip lens 36 SiO ₂ film 37 SiN film 40 CCD type image pickup device 41 according to the first embodiment of the present invention 41, 42 Photomask 44 Sensor opening 50 CCD type image pickup device according to the first embodiment of the present invention 52 Recess

Claims (3)

[Claims] 1. A CCD type image pickup device comprising vertical transfer portions and sensor portions which are alternately formed under an insulating film formed on a substrate, and further includes a vertical transfer electrode on the vertical transfer portion via an insulating film. In, a pair of concave and convex portions is formed on the substrate surface at the same pitch as the pixel array pitch, and an insulating film is formed on the substrate surface along the concave and convex portions of the concave and convex portions. The CCD is characterized in that the sensor portion is formed under the insulating film in the region, the sensor portion is formed under the insulating film in the convex region, and the vertical transfer electrode is formed on the insulating film in the concave region.
Type image sensor. 2. A method for manufacturing a CCD image pickup device, wherein, when forming a vertical transfer part, a sensor part and a vertical transfer electrode on a substrate, the difference in height between the bottom of the recess and the top of the projection is the thickness of the vertical transfer electrode. The steps of forming a pair of concave and convex portions that are approximately equal to the pitch on the substrate surface at the same pitch as the pixel array, then forming an insulating film on the substrate surface along the concave and convex portions, and performing ion implantation in the concave region A step of forming a transfer part, a step of forming an electrode layer for forming a vertical transfer electrode on the substrate surface along the irregularities, and a step of etching the electrode layer by a CMP method to remove the electrode layer in the convex area. While flattening, the step of forming a sensor part forming mask pattern on the flattened electrode layer, the sensor part forming mask pattern is used to etch the electrode layer in the convex area, and then ionization is performed. Injecting sensor And a step of forming a part
Method for manufacturing an image pickup device. 3. A method of manufacturing a CCD type image pickup device, wherein when forming a vertical transfer part, a sensor part and a vertical transfer electrode on a substrate, the substrate surface is etched to perform vertical transfer at the same pitch as the arrangement of the vertical transfer electrodes. A step of forming a concave portion in which the electrode can be embedded, then forming an insulating film on the substrate surface including the concave portion, a step of performing ion implantation in the concave portion area to form a vertical transfer portion, and filling the concave portion, A step of forming an electrode layer for forming a vertical transfer electrode on a substrate, and etching the electrode layer by a CMP method to flatten the substrate surface while removing the electrode layer on the region between the concave portions. And a step of forming a sensor part forming mask pattern on the substrate surface, and a step of forming a sensor part by implanting ions into a region between the concave parts using the sensor part forming mask pattern And a method of manufacturing a CCD image pickup device.