JPH09181048A - Plasma apparatus, thin film forming method and etching method - Google Patents
Plasma apparatus, thin film forming method and etching methodInfo
- Publication number
- JPH09181048A JPH09181048A JP7336474A JP33647495A JPH09181048A JP H09181048 A JPH09181048 A JP H09181048A JP 7336474 A JP7336474 A JP 7336474A JP 33647495 A JP33647495 A JP 33647495A JP H09181048 A JPH09181048 A JP H09181048A
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- Japan
- Prior art keywords
- electrode
- dielectric plate
- vacuum chamber
- dielectric
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 112
- 238000000034 method Methods 0.000 title claims abstract description 67
- 239000010409 thin film Substances 0.000 title claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 239000010408 film Substances 0.000 claims abstract description 47
- 230000002093 peripheral effect Effects 0.000 claims description 24
- 239000004020 conductor Substances 0.000 claims description 16
- 238000009434 installation Methods 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 8
- 230000005284 excitation Effects 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims 2
- 239000003989 dielectric material Substances 0.000 claims 1
- 238000009826 distribution Methods 0.000 abstract description 10
- 210000002381 plasma Anatomy 0.000 description 89
- 239000007789 gas Substances 0.000 description 61
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 11
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000005424 photoluminescence Methods 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052743 krypton Inorganic materials 0.000 description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 3
- 229910052754 neon Inorganic materials 0.000 description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- -1 InN Chemical compound 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- KPLQYGBQNPPQGA-UHFFFAOYSA-N cobalt samarium Chemical compound [Co].[Sm] KPLQYGBQNPPQGA-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、高周波に基づくプ
ラズマを用いた装置と、そのプラズマ装置を用いた薄膜
形成方法及びエッチング方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus using plasma based on high frequency, a thin film forming method and an etching method using the plasma apparatus.
【０００２】[0002]
【従来の技術】プラズマＣＶＤやプラズマドライエッチ
ングは、半導体プロセスなどの薄膜プロセスにおける重
要な基幹技術の一つであり、現在基板の大口径化やパタ
ーンの高アスペクト化の要求のために、高密度プラズマ
の研究が盛んに行われ、また一方では、プラズマの制御
が高められている。従来の技術としては、例えば、ジャ
パン ジャーナル オブ アプライド フィジックス
第１６巻第１９７９頁（Ｊａｐａｎ Ｊｏｕｒｎａｌ
ｏｆ Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ ， １６，
ｐ．１９７９（１９７７））に記載された、電子サイク
ロトロン共鳴（ＥＣＲ）プラズマによるドライエッチン
グ装置が挙げられる。2. Description of the Related Art Plasma CVD and plasma dry etching are one of the important basic technologies in thin film processes such as semiconductor processes, and are currently required to have a large-diameter substrate and a high pattern aspect ratio. Plasma research is being actively conducted, and on the other hand, plasma control is being enhanced. Conventional techniques include, for example, the Japan Journal of Applied Physics.
Vol. 16, pp. 1979 (Japan Journal
of Applied Physics, 16,
p. A dry etching apparatus using electron cyclotron resonance (ECR) plasma described in 1979 (1977)).
【０００３】そこで、以下では従来のＥＣＲプラズマド
ライエッチング装置について図面を参照しながら説明す
る。図９は、従来のＥＣＲプラズマドライエッチング装
置の概略を示す断面図である。基本構成としては、マグ
ネトロン（表示せず）によって発生させたマイクロ波を
伝送するマイクロ波導波管２１とＥＣＲプラズマを発生
させて試料３をエッチングする放電室２０からなる。そ
して、２．４５ＧＨｚのマイクロ波はマイクロ波導波管
２１から石英ガラス２２を通して放電室２０に導入され
る。また電磁石２３および永久磁石１８によって電子サ
イクロトロン共鳴条件を満たす０．０８７５Ｔ以上の磁
場強度を印加することによって、放電室２０内にＥＣＲ
プラズマを発生させる。発生した高密度、高励起のＥＣ
Ｒプラズマを試料３まで輸送し、ＥＣＲプラズマに含ま
れるイオン等によって良好なエッチングが行われるとい
うものである。Therefore, a conventional ECR plasma dry etching apparatus will be described below with reference to the drawings. FIG. 9 is a sectional view showing the outline of a conventional ECR plasma dry etching apparatus. The basic configuration is composed of a microwave waveguide 21 for transmitting microwaves generated by a magnetron (not shown) and a discharge chamber 20 for generating ECR plasma and etching the sample 3. Then, the microwave of 2.45 GHz is introduced into the discharge chamber 20 from the microwave waveguide 21 through the quartz glass 22. In addition, by applying a magnetic field strength of 0.0875 T or more satisfying the electron cyclotron resonance condition by the electromagnet 23 and the permanent magnet 18, the ECR is set in the discharge chamber 20.
Generates plasma. EC of high density and high excitation generated
The R plasma is transported to the sample 3, and good etching is performed by the ions contained in the ECR plasma.
【０００４】[0004]
【発明が解決しようとする課題】薄膜形成やエッチング
では、基板や試料全面において成膜速度やエッチング速
度が均一でかつ高速に処理することが重要である。この
要求のために、高密度、高励起なプラズマが必要とされ
ている。In thin film formation and etching, it is important to process the entire surface of the substrate or sample at a uniform film formation rate and a high etching rate. Due to this requirement, high density and highly excited plasma is required.
【０００５】しかしながら、従来のプラズマ装置及び薄
膜形成方法、エッチング方法においては、次のような課
題があった。However, the conventional plasma device, thin film forming method and etching method have the following problems.
【０００６】まず、高密度、高励起のプラズマとしてＥ
ＣＲプラズマを用いているために、高周波のマイクロ波
を必要とする。とくに、数ＧＨｚのマイクロ波の場合そ
の波長が１０ｃｍ程度であり、薄膜形成やエッチングに
使用される真空槽の大きさは１桁程度大きいので、真空
槽内にマイクロ波のモードが起ってしまう。このため
に、放電が起きると、マイクロ波のモードにそってプラ
ズマ密度の分布ができ、膜厚分布やエッチング斑ができ
てしまう。また、ＥＣＲプラズマを発生させるために
は、電磁石や永久磁石等による磁場を印加する必要があ
るため、磁場分布の不均一性による膜厚の不均一性及び
エッチング斑ができてしまう。とくにイオン等は磁場分
布によって進行方向が変えられるので、磁場分布は、膜
厚分布やエッチング状態に大きな影響を与える。さら
に、基板の大口径化に伴って、真空槽や磁場の発生装置
は大型化してしまう。First, as a high density and high excitation plasma, E
Since CR plasma is used, high frequency microwave is required. Particularly, in the case of a microwave of several GHz, its wavelength is about 10 cm, and the size of the vacuum chamber used for thin film formation and etching is about one order of magnitude larger, so a microwave mode occurs in the vacuum chamber. . For this reason, when discharge occurs, a plasma density distribution is generated along with the microwave mode, and a film thickness distribution and etching spots are generated. Further, in order to generate ECR plasma, it is necessary to apply a magnetic field by an electromagnet, a permanent magnet, or the like, so that nonuniformity of the film thickness and etching spots are generated due to nonuniformity of the magnetic field distribution. Particularly, since the traveling direction of ions and the like can be changed by the magnetic field distribution, the magnetic field distribution has a great influence on the film thickness distribution and the etching state. Further, as the diameter of the substrate is increased, the vacuum chamber and the magnetic field generator are also increased in size.
【０００７】本発明は、係る課題に鑑みてなされたもの
であり、均一でかつ高密度、高励起プラズマを発生し、
かつ大口径化できるプラズマ装置を提供することを目的
とするものである。また本発明は、上記のプラズマ装置
を用いた薄膜形成方法とエッチング方法を提供すること
を目的とする。The present invention has been made in view of the above problems, and generates uniform, high density, and highly excited plasma,
And it aims at providing the plasma apparatus which can be enlarged in diameter. Another object of the present invention is to provide a thin film forming method and an etching method using the above plasma device.
【０００８】[0008]
【課題を解決するための手段】前記課題を解決するた
め、本発明のプラズマ装置、薄膜形成方法及びエッチン
グ方法は、真空槽内に基板と誘電体板を対向するように
配置し、誘電体板上に形成された３つ以上の同心環状の
電極からなる高周波電力導入部を設けた真空槽に、成膜
用ガスまたはエッチングガスを導入し、高周波電力導入
部から放射されて発生したプラズマによって成膜用ガス
またはエッチングガスを励起またはイオン化し、この励
起またはイオン化された粒子を基板上に堆積させ、また
は試料をエッチングする構成となっている。In order to solve the above problems, in the plasma device, the thin film forming method and the etching method of the present invention, the substrate and the dielectric plate are arranged so as to face each other in the vacuum chamber, and the dielectric plate A film forming gas or an etching gas was introduced into a vacuum chamber provided with a high-frequency power introduction section composed of three or more concentric annular electrodes formed above, and plasma generated by the high-frequency power introduction section radiated the plasma. The film gas or the etching gas is excited or ionized, the excited or ionized particles are deposited on the substrate, or the sample is etched.
【０００９】前記本発明のプラズマ装置、薄膜形成方法
及びエッチング方法においては、同心環状電極の電極間
隔を高周波の波長の半分以下にすることが好ましい。In the plasma apparatus, the thin film forming method and the etching method of the present invention, it is preferable that the electrode interval between the concentric annular electrodes is set to be half the wavelength of the high frequency or less.
【００１０】また、本発明のプラズマ装置、薄膜形成方
法及びエッチング方法は、真空槽内に基板と誘電体板を
対向するように配置し、誘電体板上に形成された複数個
の円板状電極と、円板状電極を囲みかつ間隔を有する外
周電極からなる高周波電力導入部を設けた真空槽に、成
膜用ガスまたはエッチングガスを導入し、高周波電力導
入部から放射されて発生したプラズマによって成膜用ガ
スまたはエッチングガスを励起またはイオン化し、この
励起またはイオン化された粒子を基板上に堆積させ、ま
たは試料をエッチングする構成となっている。Further, according to the plasma apparatus, the thin film forming method and the etching method of the present invention, the substrate and the dielectric plate are arranged so as to face each other in a vacuum chamber, and a plurality of disc-shaped members are formed on the dielectric plate. Plasma generated by introducing a film-forming gas or etching gas into a vacuum chamber provided with an electrode and a high-frequency power introduction part that is composed of a peripheral electrode that surrounds the disk-shaped electrode and has a space, and is radiated from the high-frequency power introduction part. The film forming gas or the etching gas is excited or ionized, and the excited or ionized particles are deposited on the substrate or the sample is etched.
【００１１】前記本発明のプラズマ装置、薄膜形成方法
及びエッチング方法においては、円板状電極と円板状電
極を囲む外周電極との電極間隔を高周波の波長の半分以
下にすることが好ましい。In the plasma device, the thin film forming method and the etching method of the present invention, it is preferable that the electrode interval between the disc-shaped electrode and the outer peripheral electrode surrounding the disc-shaped electrode is half or less of the wavelength of the high frequency.
【００１２】さらに、本発明のプラズマ装置、薄膜形成
方法及びエッチング方法は、真空槽内に基板と第１誘電
体板を対向するように配置し、第１誘電体板上に形成し
た複数個の電極、電極を含む第１誘電体板上の第１誘電
体板の誘電率より大きな第２誘電体、さらに第１誘電体
の背面の導体によって構成される高周波電力導入部を設
けた真空槽において、高周波電力導入部の基板側から放
射されて発生したプラズマによって成膜用ガスまたはエ
ッチングガスを励起またはイオン化し、この励起または
イオン化された粒子を基板上に堆積させ、または試料を
エッチングする構成となっている。Further, according to the plasma apparatus, the thin film forming method and the etching method of the present invention, the substrate and the first dielectric plate are arranged so as to face each other in the vacuum chamber, and a plurality of the dielectric plates are formed on the first dielectric plate. In a vacuum chamber provided with an electrode, a second dielectric on the first dielectric plate including the electrode having a dielectric constant larger than that of the first dielectric plate, and a high frequency power introducing part configured by a conductor on the back surface of the first dielectric plate A structure for exciting or ionizing a film-forming gas or an etching gas by plasma generated by being radiated from the substrate side of the high-frequency power introducing unit, depositing the excited or ionized particles on the substrate, or etching a sample; Has become.
【００１３】前記本発明のプラズマ装置、薄膜形成方法
及びエッチング方法においては、複数個の電極として、
同心環状電極または、円板状電極と円板状電極を囲む外
周電極にすることが好ましい。In the plasma device, the thin film forming method and the etching method of the present invention, a plurality of electrodes are provided.
It is preferably a concentric annular electrode or a disc-shaped electrode and an outer peripheral electrode surrounding the disc-shaped electrode.
【００１４】前記本発明のプラズマ装置、薄膜形成方法
及びエッチング方法においては、第１誘電体板の背面と
導体の間でかつ電極間の位置に複数個の永久磁石を配置
し、さらに磁石の極性を第１誘電体板の中心から交互に
変え、電極間の位置の磁界強度を印加高周波の周波数で
決まる電子サイクロトロン共鳴条件以上の強度にするこ
とが好ましい。In the plasma apparatus, the thin film forming method and the etching method of the present invention, a plurality of permanent magnets are arranged between the back surface of the first dielectric plate and the conductors and between the electrodes, and the polarities of the magnets are set. Is alternately changed from the center of the first dielectric plate, and the magnetic field strength at the position between the electrodes is preferably set to be equal to or higher than the electron cyclotron resonance condition determined by the frequency of the applied high frequency wave.
【００１５】上記した構成により、本発明のプラズマ装
置、薄膜形成方法及びエッチング方法は、誘電体板を対
向するように配置し、誘電体板上に形成された３つ以上
の同心環状の電極からなる高周波電力導入部から高周波
電力を放射してプラズマ領域を形成したので、円周方向
のプラズマ密度が均一であり、薄膜形成及びエッチング
の均一性がよい。また、３つ以上の同心環状の電極を設
けて高周波電力を真空槽に導入したので、電極付近にお
いてプラズマ領域が形成され、真空槽内の寸法で決まる
高周波のモードが形成されないので、モードによる膜厚
分布やエッチング斑が起こらない。According to the plasma apparatus, the thin film forming method and the etching method of the present invention having the above-mentioned constitution, the dielectric plates are arranged so as to face each other, and three or more concentric annular electrodes formed on the dielectric plates are used. Since the high frequency power is radiated from the high frequency power introduction part to form the plasma region, the plasma density in the circumferential direction is uniform, and the thin film formation and the etching are uniform. Further, since three or more concentric annular electrodes are provided and high-frequency power is introduced into the vacuum chamber, a plasma region is formed near the electrodes and a high-frequency mode determined by the dimensions in the vacuum chamber is not formed. Thickness distribution and etching spots do not occur.
【００１６】また、本発明のプラズマ装置、薄膜形成方
法及びエッチング方法は、真空槽内に基板と誘電体板を
対向するように配置し、誘電体板上に形成された複数個
の円板状電極と、円板状電極を囲みかつ間隔を有する外
周電極からなる高周波電力導入部から高周波電力を放射
してプラズマ領域を形成したので、大口径のプラズマを
形成でき、膜形成及びエッチングの領域の大口径化がで
きる。また複数個のプラズマを形成するので、真空槽全
体としてプラズマ密度の均一化が図れることができる。Further, according to the plasma apparatus, the thin film forming method and the etching method of the present invention, the substrate and the dielectric plate are arranged so as to face each other in a vacuum chamber, and a plurality of disc-shaped members are formed on the dielectric plate. High frequency power was radiated from the high frequency power introduction part consisting of the electrode and the outer peripheral electrode surrounding the disk-shaped electrode and having a space to form a plasma region, so that a large-diameter plasma can be formed, and a plasma of the film formation and etching region can be formed. Larger diameter is possible. Moreover, since a plurality of plasmas are formed, the plasma density can be made uniform in the entire vacuum chamber.
【００１７】前記本発明のプラズマ装置、薄膜形成方法
及びエッチング方法においては、同心環状電極の電極間
隔、または円板状電極と円板状電極を囲む外周電極との
電極間隔を高周波の波長の半分以下にする好ましい態様
にすることにより、定在波が形成されないので、真空槽
内に高周波のモードの形成がなく、プラズマが均一にで
き膜厚分布やエッチング斑の少なくなる。In the plasma device, the thin film forming method and the etching method of the present invention, the electrode interval between the concentric annular electrodes or the electrode interval between the disk-shaped electrode and the outer peripheral electrode surrounding the disk-shaped electrode is half the high frequency wavelength. According to the preferred embodiment described below, since a standing wave is not formed, a high frequency mode is not formed in the vacuum chamber, plasma can be made uniform, and film thickness distribution and etching spots are reduced.
【００１８】さらに、本発明のプラズマ装置、薄膜形成
方法及びエッチング方法は、真空槽内に基板と第１誘電
体板を対向するように配置し、第１誘電体板上の複数個
の電極、電極を含む第１誘電体板上の第１誘電体板の誘
電率より大きな第２誘電体を配置したので、高周波の電
界は第２誘電体側に集中し、基板や試料側に高密度のプ
ラズマを形成できる。また、第１誘電体の背面の導体を
設けたので、第１誘電体側に放射される高周波電力を第
２誘電体側に反射でき効率よく高周波電力を真空槽内に
導入できる。Further, according to the plasma apparatus, the thin film forming method and the etching method of the present invention, the substrate and the first dielectric plate are arranged so as to face each other in the vacuum chamber, and a plurality of electrodes on the first dielectric plate are arranged. Since the second dielectric having a higher dielectric constant than that of the first dielectric plate is arranged on the first dielectric plate including the electrodes, the high frequency electric field is concentrated on the second dielectric side and the high density plasma is generated on the substrate or the sample side. Can be formed. Since the conductor on the back surface of the first dielectric is provided, the high frequency power radiated to the first dielectric side can be reflected to the second dielectric side and the high frequency power can be efficiently introduced into the vacuum chamber.
【００１９】前記本発明のプラズマ装置、薄膜形成方法
及びエッチング方法においては、複数個の電極として、
同心環状電極または、円板状電極と円板状電極を囲む外
周電極にする好ましい様態により、均一なプラズマが形
成できる。In the plasma device, the thin film forming method and the etching method of the present invention, a plurality of electrodes are provided.
A uniform plasma can be formed by a preferred mode in which the electrodes are concentric annular electrodes or disc-shaped electrodes and peripheral electrodes surrounding the disc-shaped electrodes.
【００２０】前記本発明のプラズマ装置、薄膜形成方法
及びエッチング方法においては、第１誘電体板の背面と
導体の間でかつ電極間の位置に複数個の永久磁石を配置
し、さらに磁石の極性を第１誘電体板の中心から交互に
変える好ましい様態したので、電極間にできる電界方向
と、磁力線とが直交するので効率よく放電することがで
きる。さらに電極間の位置の磁界強度として印加高周波
の周波数で決まる電子サイクロトロン共鳴条件以上の強
度にする好ましい様態したので、高励起、高密度のＥＣ
Ｒプラズマを形成できる。In the plasma apparatus, the thin film forming method and the etching method of the present invention, a plurality of permanent magnets are arranged between the back surface of the first dielectric plate and the conductors and between the electrodes, and the polarities of the magnets are set. Since it is preferable to alternately change from the center of the first dielectric plate, the direction of the electric field formed between the electrodes and the line of magnetic force are orthogonal to each other, so that efficient discharge can be performed. Further, since the magnetic field strength at the position between the electrodes is set to a strength higher than the electron cyclotron resonance condition determined by the frequency of the applied high frequency, a high excitation, high density EC
R plasma can be formed.
【００２１】[0021]
【発明の実施の形態】本発明の高周波の周波数として
は、薄膜形成およびエッチングする材料によって好適な
周波数は異なるが、基板及び試料の大きさが数１０ｃｍ
角または直径であるため、高周波の周波数は１０ＭＨｚ
から１０ＧＨｚが好ましい。BEST MODE FOR CARRYING OUT THE INVENTION As a high frequency of the present invention, a suitable frequency varies depending on a material for forming a thin film and etching, but the size of a substrate and a sample is several tens cm.
Since it is a corner or a diameter, the high frequency is 10MHz
To 10 GHz are preferred.
【００２２】本発明の同心環状電極および円板状電極の
電極間隔としては、印加高周波の周波数の半分以下の範
囲であればよく、また、複数個どうしの電極間隔も同じ
である必要もなく、プラズマ分布の均一性を微調整する
必要であれば、変化させてもよい。また電極の数も基板
等の大きさに合わせてプラズマの均一性を削ごわなけれ
ばいくつでもよい。The electrode spacing of the concentric annular electrode and the disc-shaped electrode of the present invention may be in the range of half the frequency of the applied high frequency or less, and the electrode spacing between a plurality of electrodes need not be the same. It may be changed if it is necessary to finely adjust the uniformity of the plasma distribution. Further, the number of electrodes may be any number as long as the uniformity of plasma is not reduced according to the size of the substrate or the like.
【００２３】本発明の薄膜形成およびエッチング時の圧
力範囲としては、薄膜の構成材料によって異なるので一
概に言いがたいが、通常１０ー2Ｐａ〜２０Ｐａ程度の圧
力範囲で適当な圧力を採用すればよい。高周波電力は、
用いる成膜ガスやエッチングガスの種類などによって異
なるので、一概に規定しがたいが、例えば、２０〜１０
００Ｗ程度である。The pressure range for forming and etching the thin film of the present invention varies depending on the constituent material of the thin film, so it is difficult to say unequivocally, but if a suitable pressure is usually adopted in the pressure range of about 10 −2 Pa to 20 Pa. Good. High frequency power is
Since it varies depending on the type of film forming gas and etching gas used, it is difficult to specify in general, but for example, 20 to 10
It is about 00W.
【００２４】以下本発明の具体的発明の実施の形態につ
いて説明する。 （第１の発明の実施の形態）図１は本発明のプラズマ装
置の一つの発明の実施の形態の概略断面図を示したもの
である。基本構成としては、真空槽１の中に、設置台３
上に配置された基板２と基板２に対向させた高周波電力
導入部４を配置している。真空槽１の内径は４００ｍｍ
であり、基板２と高周波電力導入部４との間の距離を５
００ｍｍとしている。次に図２は高周波電力導入部４付
近の拡大図を示したものである。この高周波電力導入部
４は、誘電体板５上に形成された複数個の同心環状電極
６によって構成されており、誘電体板５として石英板を
用い、同心環状電極６は、誘電体板５上に、幅９ｍｍ、
厚さ５０μｍの銅製の環状電極６を同心円上に４個並べ
たものとなっている。高周波としては２．４５ＧＨｚの
マイクロ波を用いた。２．４５ＧＨｚのマイクロ波の波
長は１２．２４ｃｍであり、電極間隔はその半分以下の
５ｃｍとした。The specific embodiments of the present invention will be described below. (First Embodiment of the Invention) FIG. 1 is a schematic sectional view of one embodiment of the plasma apparatus of the present invention. As a basic configuration, the installation table 3 is installed in the vacuum chamber 1.
The substrate 2 arranged above and the high-frequency power introduction unit 4 facing the substrate 2 are arranged. The inner diameter of the vacuum chamber 1 is 400 mm
Therefore, the distance between the substrate 2 and the high frequency power introduction part 4 is set to 5
It is set to 00 mm. Next, FIG. 2 is an enlarged view of the vicinity of the high-frequency power introducing section 4. The high-frequency power introduction section 4 is composed of a plurality of concentric annular electrodes 6 formed on a dielectric plate 5, and a quartz plate is used as the dielectric plate 5, and the concentric annular electrode 6 is composed of the dielectric plate 5. On top, width 9mm,
Four copper annular electrodes 6 having a thickness of 50 μm are arranged concentrically. A microwave of 2.45 GHz was used as the high frequency. The wavelength of the microwave of 2.45 GHz was 12.24 cm, and the electrode interval was 5 cm, which was less than half thereof.
【００２５】このようなプラズマ装置の性能を評価する
ために電子温度、電子密度の測定を以下のように行っ
た。In order to evaluate the performance of such a plasma device, electron temperature and electron density were measured as follows.
【００２６】真空槽１内にアルゴンガスを導入し、ガス
圧を１Ｐａにし、続いて同心環状電極６にマイクロ波源
７より２．４５ＧＨｚのマイクロ波を印加した。この時
のマイクロ波電力は２００Ｗにした。このような放電条
件において、電子密度が約１０10ｃｍ-3、電子温度が約
３ｅＶの高密度高励起のプラズマが真空槽内に一様に形
成できた。Argon gas was introduced into the vacuum chamber 1 to adjust the gas pressure to 1 Pa, and then a microwave of 2.45 GHz was applied to the concentric annular electrode 6 from the microwave source 7. The microwave power at this time was set to 200W. Under such discharge conditions, a high-density and highly excited plasma having an electron density of about 10 10 cm -3 and an electron temperature of about 3 eV could be uniformly formed in the vacuum chamber.
【００２７】このようなプラズマ装置の真空槽１内の圧
力を１０-4Ｐａ以下にした後、成膜ガスとして水素ガス
とトリメチルアルミニウム（ＴＭＡ：Ａｌ（ＣＨ3）3）
とをそれぞれの供給口８、９より供給した。水素ガスと
ＴＭＡの流量はそれぞれ２０ｓｃｃｍ、１０ｓｃｃｍと
し、全圧を１Ｐａとした。マイクロ波電力は２００Ｗ印
加し、基板温度は２００℃とした。After the pressure in the vacuum chamber 1 of such a plasma apparatus is set to 10 −4 Pa or less, hydrogen gas and trimethylaluminum (TMA: Al (CH 3 ) 3 ) are used as a film forming gas.
And were supplied from respective supply ports 8 and 9. The flow rates of hydrogen gas and TMA were 20 sccm and 10 sccm, respectively, and the total pressure was 1 Pa. 200 W of microwave power was applied and the substrate temperature was 200 ° C.
【００２８】このような条件でプラズマを形成し、基板
上にアルミニウム膜を０.７μｍ／ｍｉｎの成膜速度で
形成した。３μΩ・ｃｍの低い電気抵抗を示すアルミニ
ウム膜を形成することができた。Plasma was formed under these conditions, and an aluminum film was formed on the substrate at a film forming rate of 0.7 μm / min. An aluminum film having a low electric resistance of 3 μΩ · cm could be formed.
【００２９】なお、本発明の実施の形態ではアルミニウ
ムの原料としてトリメチルアルミニウムを用いたが、そ
の他のアルミニウムを含む気体を用いることは本発明の
薄膜形成方法に含まれる。また、銅、タングステン、タ
ンタル、チタニウム、モリブデン等の金属元素を含むガ
スを用いて本発明のプラズマ装置によって金属膜を形成
することも本発明の薄膜形成方法に含まれる。In the embodiment of the present invention, trimethylaluminum is used as a raw material of aluminum, but using a gas containing other aluminum is included in the thin film forming method of the present invention. Further, forming a metal film by the plasma device of the present invention using a gas containing a metal element such as copper, tungsten, tantalum, titanium, molybdenum is also included in the thin film forming method of the present invention.
【００３０】（第２の発明の実施の形態）以下本発明第
２の発明の実施の形態におけるエッチング方法について
説明する。(Second Embodiment of the Invention) An etching method according to an embodiment of the second invention of the present invention will be described below.
【００３１】同心環状の電極によって構成される高周波
電力導入部を用いたエッチング装置は、上記の第１の発
明の実施の形態で示した薄膜形成装置とほぼ同じ構成で
あるため、相違した部分について詳述する。The etching apparatus using the high-frequency power introducing section composed of concentric annular electrodes has almost the same structure as the thin-film forming apparatus shown in the above-mentioned first embodiment of the invention, so that the different points will be described. Detailed description.
【００３２】真空槽１内に、試料１０、高周波電力導入
部４を配置し、高周波電力導入部４及び真空槽１の寸法
は、上記の第１の発明の実施の形態と同じである。試料
１０をエッチングするためにエッチング用高周波電源１
１を設置台３に接続し、エッチング用高周波電源１１の
周波数は１３．５６ＭＨｚを用いた。なお、試料１０と
しては３−５族化合物半導体材料のＧａＡｓ基板を用い
た。The sample 10 and the high frequency power introducing section 4 are arranged in the vacuum chamber 1, and the dimensions of the high frequency power introducing section 4 and the vacuum chamber 1 are the same as those of the above-described first embodiment of the invention. High frequency power source for etching 1 for etching the sample 10
1 was connected to the installation table 3, and the frequency of the high frequency power source 11 for etching was 13.56 MHz. As the sample 10, a GaAs substrate of 3-5 group compound semiconductor material was used.
【００３３】このようなプラズマ装置の真空槽１内の圧
力を１０-4Ｐａ以下にした後、エッチングガスとして水
素ガスとメタンガスの混合ガスを用いてエッチングガス
供給口１４より真空槽１に導入し、それぞれの分圧を６
Ｐａ、０．５Ｐａとした。マイクロ波とエッチング用高
周波の電力をそれぞれ２００Ｗ印加した。After the pressure in the vacuum chamber 1 of such a plasma device is set to 10 -4 Pa or less, a mixed gas of hydrogen gas and methane gas is used as an etching gas and introduced into the vacuum chamber 1 through the etching gas supply port 14. , Each partial pressure is 6
Pa and 0.5 Pa were set. 200 W of microwave power and 200 W of high frequency power for etching were applied respectively.
【００３４】このような条件でプラズマを形成し、試料
のエッチングを行なった。エッチング速度は０．２μｍ
／ｍｉｎと非常に高速であった。その後、低温フォトル
ミネッセンス測定の結果、エッチング前後においてのエ
ッチングによる損傷のないことを確認した。Plasma was formed under these conditions and the sample was etched. Etching rate is 0.2 μm
It was a very high speed of / min. Then, as a result of low-temperature photoluminescence measurement, it was confirmed that there was no damage due to etching before and after etching.
【００３５】なお、本発明の実施の形態ではＧａＡｓ基
板のエッチングガスとしてメタンガスと水素ガスを用い
たが、その他の炭化水素ガス（ＣｍＨｎ；ｎ＝２ｍ＋
２、２ｍ：ｍは自然数、または２ｍ−２：ｍは２以上の
整数）でもよく、またメチルアルコールやエチルアルコ
ールなどのアルコール類でもよい。さらに、本発明の実
施の形態では、メタンガスと水素ガスを用いてエッチン
グを行ったが、水素ガスとメタンガスの混合ガスに希ガ
ス（ヘリウム、アルゴン、ネオン、クリプトン）を混ぜ
てもよい。Although methane gas and hydrogen gas are used as the etching gas for the GaAs substrate in the embodiment of the present invention, other hydrocarbon gas (CmHn; n = 2m +) is used.
2, 2m: m may be a natural number, or 2m-2: m may be an integer of 2 or more), or alcohols such as methyl alcohol and ethyl alcohol. Further, in the embodiment of the present invention, etching is performed using methane gas and hydrogen gas, but a rare gas (helium, argon, neon, krypton) may be mixed in a mixed gas of hydrogen gas and methane gas.
【００３６】本発明の実施の形態においてはエッチング
用高周波電源の周波数として１３．５６ＭＨｚを用いた
が、数１００ｋＨｚから１ＧＨｚまでの周波数領域の高
周波であればよい。In the embodiment of the present invention, 13.56 MHz is used as the frequency of the high frequency power source for etching, but any high frequency in the frequency range from several 100 kHz to 1 GHz may be used.
【００３７】また、本発明の実施の形態では３−５族化
合物半導体材料のＧａＡｓのエッチングを行なったが、
エッチングを行う材料としては、他の３−５族化合物半
導体材料でもよく、たとえば、ＩｎＰ、ＡｌＮ、Ｇａ
Ｐ、ＧａＮ、ＧａxＡｌ1-xＡｓ（０＜ｘ＜１）、Ｉｎx
Ｇａ1-xＮ（０＜ｘ＜１）、ＩｎxＧａ1-xＡｓyＰ
1-y（０＜ｘ＜１，０＜ｙ＜１）などでもよい。また、
これらの３−５族化合物半導体による量子井戸構造の薄
膜であってもよい。さらに、他のエッチング材料として
は、２−６化合物半導体材料でもよく、たとえばＺｎ
Ｓ、ＺｎＳｅ、ＺｎＴｅ、ＣｄＳ、ＣｄＳｅ、ＣｄＴ
ｅ、ＺｎxＭｎ1-xＴｅ（０＜ｘ＜１）、ＣｄxＭｎ1-xＴ
ｅ（０＜ｘ＜１）、ＺｎxＣｄ1-xＴｅ（０＜ｘ＜１）、
ＺｎxＣｄ1-xＳｅ（０＜ｘ＜１）、ＺｎＳyＳｅ1-y（０
＜ｙ＜１）、ＺｎxＭｇ1-xＳyＳｅ1-y（０＜ｘ＜１，０
＜ｙ＜１）などでもよい。また、これらの２−６族化合
物半導体材料の量井戸構造の薄膜であってもよい。たと
えば、ＺｎＳｅ薄膜を本発明のプラズマ装置によって、
メタンガスと水素ガスの混合ガスを用いてエッチングを
行なった結果、４０ｎｍ／ｍｉｎの高速のエッチングが
できた。また、低温フォトルミネッセンス測定の結果、
エッチングによる損傷がないことを確認した。In the embodiment of the present invention, GaAs of the group 3-5 compound semiconductor material is etched.
The material for etching may be another 3-5 group compound semiconductor material, such as InP, AlN, and Ga.
P, GaN, Ga x Al 1-x As (0 <x <1), In x
Ga 1-x N (0 <x <1), In x Ga 1-x As y P
1-y (0 <x <1, 0 <y <1) may be used. Also,
It may be a thin film of a quantum well structure made of these Group 3-5 compound semiconductors. Further, as another etching material, a 2-6 compound semiconductor material may be used.
S, ZnSe, ZnTe, CdS, CdSe, CdT
e, Zn x Mn 1-x Te (0 <x <1), Cd x Mn 1-x T
e (0 <x <1), Zn x Cd 1-x Te (0 <x <1),
Zn x Cd 1-x Se (0 <x <1), ZnS y Se 1-y (0
<Y <1), Zn x Mg 1-x S y Se 1-y (0 <x <1,0
<Y <1) may be used. Further, a thin film having a quantum well structure of these 2-6 group compound semiconductor materials may be used. For example, a ZnSe thin film can be formed by the plasma device of the present invention.
As a result of etching using a mixed gas of methane gas and hydrogen gas, high-speed etching of 40 nm / min was achieved. In addition, as a result of low-temperature photoluminescence measurement,
It was confirmed that there was no damage due to etching.
【００３８】（第３の発明の実施の形態）以下、本発明
第３の発明の実施の形態におけるエッチング方法につい
て説明する。(Embodiment of the Third Invention) The etching method in the embodiment of the third invention of the present invention will be described below.
【００３９】図３は本発明のプラズマ装置の一つの発明
の実施の形態の概略断面図を示したものである。基本構
成としては、真空槽１の中に、設置台３上に配置された
試料１０と試料１０に対向させた高周波電力導入部４を
配置している。真空槽１の内径は４００ｍｍであり、試
料１０と高周波電力導入部４の間の距離を３００ｍｍと
した。また図４は高周波電力導入部４付近の拡大概略図
を示したものである。FIG. 3 shows a schematic sectional view of one embodiment of the plasma device of the present invention. As a basic configuration, the sample 10 placed on the installation table 3 and the high-frequency power introducing section 4 facing the sample 10 are placed in the vacuum chamber 1. The inner diameter of the vacuum chamber 1 was 400 mm, and the distance between the sample 10 and the high frequency power introduction part 4 was 300 mm. Further, FIG. 4 is an enlarged schematic view of the vicinity of the high frequency power introducing section 4.
【００４０】図３及び図４において、高周波電力導入部
４は、誘電体板５上に形成した複数個の円板状電極１２
と、円板状電極１２と間隔を有しかつ円板状電極１２を
囲んだ外周電極１３によって構成されている。誘電体板
５として石英板を用い、直径１０ｍｍ、厚さ５０μｍの
銅製の円板状電極１２を誘電体板５上に１３個形成し
た。また、図４に示すように、厚さ５０μｍの銅製の外
周電極１３は、円板状電極１２との電極間隔を１５ｍｍ
に保って各の円板状電極１２を囲みながら、すべての円
板状電極１２を含む大円を形成している。この大円の直
径は２５０ｍｍとし、さらに、円板状電極どうしの距離
は約５０ｍｍにした。高周波としては２．４５ＧＨｚの
マイクロ波を用いた。なお、２．４５ＧＨｚのマイクロ
波の波長は１２．２４ｃｍであり、電極間隔はその半分
以下の１５ｍｍとした。In FIGS. 3 and 4, the high-frequency power introducing section 4 includes a plurality of disc-shaped electrodes 12 formed on the dielectric plate 5.
And an outer peripheral electrode 13 surrounding the disc-shaped electrode 12 at a distance from the disc-shaped electrode 12. A quartz plate was used as the dielectric plate 5, and 13 disk-shaped electrodes 12 made of copper and having a diameter of 10 mm and a thickness of 50 μm were formed on the dielectric plate 5. Further, as shown in FIG. 4, the outer peripheral electrode 13 made of copper having a thickness of 50 μm has an electrode interval of 15 mm from the disc-shaped electrode 12.
A large circle including all the disk-shaped electrodes 12 is formed while surrounding each disk-shaped electrode 12 while being kept at. The diameter of this great circle was 250 mm, and the distance between the disk-shaped electrodes was about 50 mm. A microwave of 2.45 GHz was used as the high frequency. The wavelength of the microwave of 2.45 GHz was 12.24 cm, and the electrode interval was set to 15 mm, which is half or less of that.
【００４１】このようなプラズマ装置の性能を評価する
ために電子温度、電子密度の測定を行った。真空槽１内
にアルゴンガスを導入し、ガス圧を１Ｐａにした。マイ
クロ波を２００Ｗ印加して、プラズマを発生させた。そ
の結果、電子密度が約２Ｘ１０10ｃｍ-3、電子温度が約
３ｅＶの高密度高励起のプラズマが、ほぼ高周波電力導
入部４全面に亘って形成できた。In order to evaluate the performance of such a plasma device, electron temperature and electron density were measured. Argon gas was introduced into the vacuum chamber 1 to adjust the gas pressure to 1 Pa. A microwave of 200 W was applied to generate plasma. As a result, a high-density and highly-excited plasma having an electron density of about 2 × 10 10 cm −3 and an electron temperature of about 3 eV could be formed almost all over the high frequency power introducing portion 4.
【００４２】また、試料１０を支持する設置台３にエッ
チング用高周波電源１１を接続した。このエッチング用
高周波電源１１の周波数は２ＭＨｚとした。試料１０は
Ｓｉ基板上に形成したＳｉＯ2膜である。このようなプ
ラズマ装置の真空槽１内の圧力を１０-4Ｐａ以下にした
後、ＳｉＯ2のエッチングガスとしてＣＦ3、水素ガスを
用いてエッチングガス供給口１４より真空槽１より供給
し、それぞれの分圧を２Ｐａ、０．５Ｐａとした。その
後に、マイクロ波とエッチング用高周波の電力をそれぞ
れ２００Ｗ、１００Ｗ印加した。Further, a high frequency power source 11 for etching was connected to the installation table 3 supporting the sample 10. The frequency of the high frequency power source 11 for etching was set to 2 MHz. Sample 10 is a SiO 2 film formed on a Si substrate. After the pressure in the vacuum chamber 1 of such a plasma device is set to 10 −4 Pa or less, CF 3 and hydrogen gas are used as etching gas for SiO 2 and supplied from the vacuum chamber 1 through the etching gas supply port 14, respectively. Was set to 2 Pa and 0.5 Pa. After that, 200 W and 100 W of microwave and high frequency power for etching were applied, respectively.
【００４３】このような条件でプラズマを形成し、試料
上のＳｉＯ2を０．５μｍ／ｍｉｎの高速のエッチング
速度でエッチングすることができた。Plasma was formed under these conditions, and SiO 2 on the sample could be etched at a high etching rate of 0.5 μm / min.
【００４４】なお、本発明の実施の形態ではＳｉＯ2の
エッチングガスとしてＣＦ3ガスと水素ガスの混合ガス
を用いたが、その他のエッチングガスとして、ＣＨ
Ｆ3、Ｃ2Ｆ 6、Ｃ3Ｆ8、Ｃ4Ｆ8等を用いてエッチングす
ることは本発明のエッチング方法に含まれる。さらに、
本発明の実施の形態では、ＣＦ3ガスと水素ガスの混合
ガスを用いてエッチングを行ったが、水素ガスとＣＦ3
ガスの混合ガスにさらに希ガス（ヘリウム、アルゴン、
ネオン、クリプトン）を混ぜてもよい。In the embodiment of the present invention, SiOTwoof
CF as etching gasThreeGas and hydrogen gas mixture
CH was used as the other etching gas.
FThree, CTwoF 6, CThreeF8, CFourF8Etching using
This is included in the etching method of the present invention. further,
In the embodiment of the present invention, CFThreeMixing gas and hydrogen gas
Etching was performed using gas, but hydrogen gas and CFThree
A rare gas (helium, argon,
Neon, krypton) may be mixed.
【００４５】本発明の実施の形態においてはエッチング
用高周波電源１１として２ＭＨｚの高周波を用いたが、
数１００ｋＨｚから１ＧＨｚまでの周波数領域の高周波
であればよい。In the embodiment of the present invention, a high frequency of 2 MHz was used as the high frequency power source 11 for etching.
It may be a high frequency in the frequency range from several 100 kHz to 1 GHz.
【００４６】（第４の発明の実施の形態）図５は本発明
のプラズマ装置の一つの発明の実施の形態の概略断面図
を示したものである。基本構成としては、真空槽１の中
に、設置台３上に配置された基板２と基板２に対向させ
た高周波電力導入部４を配置している。真空槽１の内径
は４００ｍｍであり、基板２と高周波電力導入部４の間
の距離は５００ｍｍとした。また図６は高周波電力導入
部４付近の拡大図を示したものである。(Embodiment 4 of the Invention) FIG. 5 is a schematic sectional view showing one embodiment of the plasma apparatus of the present invention. As a basic configuration, in the vacuum chamber 1, the substrate 2 placed on the installation table 3 and the high-frequency power introduction unit 4 facing the substrate 2 are placed. The inner diameter of the vacuum chamber 1 was 400 mm, and the distance between the substrate 2 and the high frequency power introduction part 4 was 500 mm. Further, FIG. 6 is an enlarged view of the vicinity of the high-frequency power introducing section 4.
【００４７】図５及び図６において、高周波電力導入部
４は、第１誘電体板１５上に形成された複数個の同心環
状電極６と、同心環状電極６上に形成した第１誘電体板
１５の誘電率より大きな誘電率を有する第２誘電体膜１
６、および第１誘電体板１５の背面全面に亘って形成し
た導体１７によって構成されている。第１誘電体板５と
して石英板を用い、同心環状電極６は第１誘電体板５上
に、幅９ｍｍ、厚さ５０μｍの銅製の環状電極６を同心
円上に４個並べたものである。第２誘電体膜１６として
アルミナ（Ａｌ2Ｏ3）を用い、同心環状電極６を形成し
たのちに、第１誘電体板５上にアルミナを形成した。な
お、厚さは１００μｍにした。さらに、第１誘電体板５
の背面全面に銅製の導体１７を真空蒸着で形成し、厚さ
を１０μｍにした。高周波としては２．４５ＧＨｚのマ
イクロ波を用いたが、この２．４５ＧＨｚのマイクロ波
の波長は１２．２４ｃｍであり、電極間隔はその半分以
下の５ｃｍとした。In FIGS. 5 and 6, the high-frequency power introducing section 4 includes a plurality of concentric annular electrodes 6 formed on the first dielectric plate 15 and a first dielectric plate formed on the concentric annular electrodes 6. Second dielectric film 1 having a dielectric constant greater than 15
6 and the conductor 17 formed over the entire back surface of the first dielectric plate 15. A quartz plate is used as the first dielectric plate 5, and the concentric annular electrode 6 is formed by arranging four copper annular electrodes 6 having a width of 9 mm and a thickness of 50 μm on a concentric circle on the first dielectric plate 5. Alumina (Al 2 O 3 ) was used as the second dielectric film 16, the concentric annular electrode 6 was formed, and then the alumina was formed on the first dielectric plate 5. The thickness was 100 μm. Further, the first dielectric plate 5
The conductor 17 made of copper was formed on the entire back surface by vacuum evaporation to have a thickness of 10 μm. A microwave of 2.45 GHz was used as the high frequency, and the wavelength of the microwave of 2.45 GHz was 12.24 cm, and the electrode interval was set to 5 cm, which is less than half thereof.
【００４８】このようなプラズマ装置の性能を評価する
ために電子温度、電子密度の測定を行った。真空槽１内
にアルゴンガスを導入し、ガス圧を１Ｐａにした。マイ
クロ波を同心環状電極６に２００Ｗ印加した。その結
果、電子密度が約５Ｘ１０10ｃｍ-3、電子温度が約４ｅ
Ｖの高密度高励起のプラズマが一様に形成できた。In order to evaluate the performance of such a plasma device, electron temperature and electron density were measured. Argon gas was introduced into the vacuum chamber 1 to adjust the gas pressure to 1 Pa. A microwave of 200 W was applied to the concentric annular electrode 6. As a result, the electron density was about 5 × 10 10 cm -3 and the electron temperature was about 4e.
Plasma with high density and high excitation of V could be formed uniformly.
【００４９】このようなプラズマ装置の真空槽１内の圧
力を１０-6Ｐａ以下にした後、成膜ガスとして窒素ガス
とトリメチルガリウム（ＴＭＧ：Ｇａ（ＣＨ3）3）とを
それぞれの供給口８、９より供給した。窒素ガスとＴＭ
Ｇの流量はそれぞれ１０ｓｃｃｍ、０．５ｓｃｃｍであ
り、全圧は１Ｐａにした。その後に、マイクロ波電力を
３００Ｗ印加した。基板温度は６００℃とし、基板２と
してサファイアｃ面基板を用いた。After the pressure in the vacuum chamber 1 of such a plasma apparatus is set to 10 −6 Pa or less, nitrogen gas and trimethylgallium (TMG: Ga (CH 3 ) 3 ) are supplied as film forming gases to the respective supply ports. It was supplied from 8 and 9. Nitrogen gas and TM
The flow rates of G were 10 sccm and 0.5 sccm, respectively, and the total pressure was 1 Pa. After that, 300 W of microwave power was applied. The substrate temperature was 600 ° C., and a sapphire c-plane substrate was used as the substrate 2.
【００５０】このような条件でプラズマを形成し、基板
２上に窒化ガリウム膜を成長させた。Ｘ線回折法によっ
て結晶評価を行なうと、２θ＝３４．５９°近傍に（０
０２）面からの回折ピークが現れており、成長させたＧ
ａＮ膜がｃ軸配向していることを示した。また反射高エ
ネルギー電子線回折（ＲＨＥＥＤ）法による評価では、
ストリーク状の回折パターンが得ることができ、成長さ
せたＧａＮ膜が単結晶膜であり、また平滑性の良好な膜
であることを示した。電気的特性では高抵抗膜であり、
窒素空孔がない膜であると考えられる。さらに、低温フ
ォトルミネッセンス測定の結果より、不純物の混入の少
ない良質な膜であることを示した。Plasma was formed under these conditions to grow a gallium nitride film on the substrate 2. When the crystal was evaluated by the X-ray diffraction method, a value of (0
The diffraction peak from the (02) plane appears, and the grown G
It was shown that the aN film was c-axis oriented. In addition, in the evaluation by the reflection high energy electron diffraction (RHEED) method,
A streak-like diffraction pattern was obtained, and it was shown that the grown GaN film was a single crystal film and had good smoothness. In terms of electrical characteristics, it is a high resistance film,
It is considered that the film has no nitrogen holes. Furthermore, it was shown from the result of low-temperature photoluminescence measurement that the film was a good quality with less impurities mixed therein.
【００５１】なお、本発明の実施の形態ではガリウムの
原料としてトリメチルガリウムを用いたが、その他のガ
リウムを含む気体用いることは本発明の薄膜形成方法に
含まれる。また、本発明の実施の形態では窒素ガスを用
いたが窒素を含むガスであればよく、たとえば、アンモ
ニアでもよい。さらに、インジウム、アルミニウム等の
３族元素を含むガスと窒素を含むガスを用い、本発明の
プラズマ装置によってＩｎＮ，ＡｌＮ，ＩｎxＧａ1-xＮ
（０＜ｘ＜１），ＩｎxＡｌ1ーxＮ（０＜ｘ＜１）等の窒
化物の単結晶薄膜を形成することも本発明の薄膜形成方
法に含まれる。たとえば、アルミニウムを含むガスであ
るトリメチルアルミニウムを１ｓｃｃｍ、窒素ガス１０
ｓｃｃｍをプラズマ装置に供給し、基板温度を７００
℃、マイクロ波電力を２５０Ｗ印加した作製条件におい
て、サファイアｃ面基板上にＡｌＮ膜を成長させた。Ｘ
線回折法により結晶評価を行なうと、２θ＝３６°近傍
に（００２）面からの回折ピークが現れており、得られ
たＡｌＮ膜がｃ軸配向していることを示した。また低温
フォトルミネッセンス測定の結果より、不純物の少ない
良質な膜であることがわかった。Although trimethylgallium was used as the raw material of gallium in the embodiment of the present invention, the use of other gas containing gallium is included in the thin film forming method of the present invention. Although nitrogen gas is used in the embodiment of the present invention, any gas containing nitrogen may be used, for example, ammonia may be used. Further, by using a gas containing a Group 3 element such as indium and aluminum and a gas containing nitrogen, InN, AlN, In x Ga 1-x N 2 is obtained by the plasma device of the present invention.
Forming a single crystal thin film of a nitride such as (0 <x <1) or In x Al 1 -x N (0 <x <1) is also included in the thin film forming method of the present invention. For example, 1 sccm of trimethylaluminum, which is a gas containing aluminum, and nitrogen gas 10
Sccm is supplied to the plasma device, and the substrate temperature is set to 700.
An AlN film was grown on a sapphire c-plane substrate under the manufacturing conditions of 250 ° C. and a microwave power of 250 W applied. X
When the crystal was evaluated by the line diffraction method, a diffraction peak from the (002) plane appeared near 2θ = 36 °, showing that the obtained AlN film was c-axis oriented. Moreover, it was found from the result of low-temperature photoluminescence measurement that the film was a good quality film with few impurities.
【００５２】（第５の発明の実施の形態）図７は本発明
のプラズマ装置の一つの発明の実施の形態の概略断面図
を示したものである。基本構成としては、上記の第４の
発明の実施の形態における図５で示したプラズマ装置に
永久磁石１８とエッチング用高周波電源１１を付加した
ものである。(Embodiment of the Fifth Invention) FIG. 7 is a schematic sectional view of one embodiment of the plasma apparatus of the present invention. As a basic structure, a permanent magnet 18 and a high frequency power source 11 for etching are added to the plasma device shown in FIG. 5 in the embodiment of the fourth invention.
【００５３】従って以下では、第４の発明の実施の形態
と相違した部分については詳述し、同一の部分について
は要約して説明する。Therefore, in the following, the parts different from the fourth embodiment of the invention will be described in detail, and the same parts will be summarized and described.
【００５４】真空槽１の中には、設置台３、試料１０、
高周波電力導入部４およびエッチング用高周波電源１１
を配置している。真空槽１の内径は３５０ｍｍであり、
試料１０と高周波電力導入部４の間の距離は５００ｍｍ
とした。図８は高周波電力導入部４付近の拡大図を示し
たものである。高周波電力導入部４は、第１誘電体板１
５、数個の同心環状電極６、第２誘電体膜１６、第１誘
電体板１５に形成した導体１７および永久磁石１８によ
って構成されている。第１誘電体板５、同心環状電極
６、第２誘電体膜１６は第４の発明の実施の形態で示し
たものと同一である。永久磁石１８は直径１５ｍｍ、高
さ１０ｍｍのサマリウム・コバルトであり、この永久磁
石１８を環状電極間に多数配置した。また、同心円の中
心から順次極性を反転させている。さらに第８図に示す
ように、各の永久磁石１８は第１誘電体板５の背面側で
軟鉄の導体１７によって結合されている。その結果、環
状電極間の第２誘電体膜上における磁場強度は、印加高
周波の電子サイクロトロン共鳴条件を満たすようになっ
た。高周波として２．４５ＧＨｚのマイクロ波を用いた
場合、電子サイクロトロン共鳴条件の磁場強度は０．０
８７５Ｔである。また、永久磁石１８は冷却水出入口１
９によって水冷できるようになっている。設置台３はエ
ッチング用高周波電源１１に接続されている。高周波と
しては２．４５ＧＨｚのマイクロ波を用い、エッチング
用の高周波源の周波数は１３．５６ＭＨｚを用いた。In the vacuum chamber 1, the installation table 3, sample 10,
High-frequency power introduction part 4 and high-frequency power source 11 for etching
Has been arranged. The inner diameter of the vacuum chamber 1 is 350 mm,
The distance between the sample 10 and the high frequency power introduction part 4 is 500 mm
And FIG. 8 is an enlarged view of the vicinity of the high-frequency power introducing section 4. The high-frequency power introduction unit 4 includes the first dielectric plate 1
5, a plurality of concentric annular electrodes 6, a second dielectric film 16, a conductor 17 formed on the first dielectric plate 15, and a permanent magnet 18. The first dielectric plate 5, the concentric annular electrode 6, and the second dielectric film 16 are the same as those shown in the embodiment of the fourth invention. The permanent magnet 18 is samarium-cobalt having a diameter of 15 mm and a height of 10 mm, and many permanent magnets 18 are arranged between the annular electrodes. Further, the polarities are sequentially reversed from the center of the concentric circles. Further, as shown in FIG. 8, each permanent magnet 18 is connected by a soft iron conductor 17 on the back side of the first dielectric plate 5. As a result, the magnetic field strength on the second dielectric film between the annular electrodes came to satisfy the electron cyclotron resonance condition of the applied high frequency. When the microwave of 2.45 GHz is used as the high frequency, the magnetic field strength under the electron cyclotron resonance condition is 0.0.
It is 875T. Further, the permanent magnet 18 is the cooling water inlet / outlet 1
It can be water-cooled by 9. The installation table 3 is connected to a high frequency power source 11 for etching. The microwave of 2.45 GHz was used as the high frequency, and the frequency of the high frequency source for etching was 13.56 MHz.
【００５５】このようなプラズマ装置の性能を評価する
ために電子温度、電子密度の測定を行った。真空槽１内
にアルゴンガスを導入し、ガス圧を０．１Ｐａにした。
マイクロ波電力を２００Ｗ印加した場合、電子密度が２
Ｘ１０11ｃｍ-3、電子温度が約５ｅＶの高密度高励起の
プラズマが一様に形成できた。In order to evaluate the performance of such a plasma device, electron temperature and electron density were measured. Argon gas was introduced into the vacuum chamber 1 to adjust the gas pressure to 0.1 Pa.
When microwave power of 200 W is applied, the electron density is 2
A high density and highly excited plasma having an electron temperature of about 5 eV and X10 11 cm -3 could be uniformly formed.
【００５６】このようなプラズマ装置の真空槽１内の圧
力を１０-5Ｐａ以下にした後、Ｓｉのエッチングガスと
してＣｌ2を用いてエッチングガス供給口１４より導入
し、流量を３０ｓｃｃｍ、圧力を０．１３Ｐａとした。
その後に、マイクロ波とエッチング用高周波の電力をそ
れぞれ３００Ｗ、１００Ｗと印加した。試料１０として
は、ポリシリコンを堆積したＳｉ基板を用い、ポリシリ
コン上にはレジストを塗布した。レジストのパターンと
しては、ラインアンドスペースは０．５μｍ、ライン幅
０．５μｍのものを多数形成した。After the pressure in the vacuum chamber 1 of such a plasma apparatus is set to 10 -5 Pa or less, Cl 2 is used as an etching gas for Si and is introduced from the etching gas supply port 14, and the flow rate is 30 sccm and the pressure is set to 30 sccm. It was set to 0.13 Pa.
After that, microwave power and high frequency power for etching were applied at 300 W and 100 W, respectively. As the sample 10, a Si substrate on which polysilicon was deposited was used, and a resist was applied on the polysilicon. As the resist pattern, a large number of lines and spaces having a width of 0.5 μm and a line width of 0.5 μm were formed.
【００５７】このような条件でプラズマを形成し、試料
上のＳｉを１０ｎｍ／ｍｉｎの高速のエッチング速度で
エッチングすることができた。また、レジストパターン
を忠実に転写することができ、さらに、ノッチは観測さ
れなかった。Plasma was formed under these conditions, and Si on the sample could be etched at a high etching rate of 10 nm / min. Further, the resist pattern could be faithfully transferred, and no notch was observed.
【００５８】なお、本発明の実施の形態ではＳｉのエッ
チングガスとしてＣｌ2ガスを用いたが、その他のエッ
チングガスとして、ＣＦ4、ＳＦ6、ＮＦ3、ＣＦ3Ｂｒ、
ＨＢｒ等を用いてエッチングすることは本発明のエッチ
ング方法に含まれる。さらに、本発明の実施の形態で
は、ＣＦ3ガスのみを用いてエッチングを行ったが、Ｃ
Ｆ3ガスに酸素ガス、窒素ガスおよび希ガス（ヘリウ
ム、アルゴン、ネオン、クリプトン）を混合してよい。Although Cl 2 gas is used as the Si etching gas in the embodiment of the present invention, other etching gases such as CF 4 , SF 6 , NF 3 , CF 3 Br,
Etching using HBr or the like is included in the etching method of the present invention. Furthermore, in the embodiment of the present invention, etching is performed using only CF 3 gas, but C
F 3 gas may be mixed with oxygen gas, nitrogen gas and rare gas (helium, argon, neon, krypton).
【００５９】本発明の実施の形態においてはエッチング
用高周波電源として１３．５６ＭＨｚの高周波を用いた
が、数ＭＨｚから１ＧＨｚまでの周波数領域の高周波で
あればよい。In the embodiment of the present invention, a high frequency of 13.56 MHz is used as the high frequency power source for etching, but a high frequency in the frequency range from several MHz to 1 GHz may be used.
【００６０】[0060]
【発明の効果】以上説明したように本発明のプラズマ装
置、薄膜形成方法及びエッチング方法は、高周波電力導
入部の電極形状を上記した発明の実施の形態に示される
ような形状とすることにより、高密度、高励起のプラズ
マを均一に発生することができ、かつ大口径化が図れ
る。As described above, in the plasma device, the thin film forming method and the etching method of the present invention, the electrode shape of the high frequency power introducing portion is set to the shape as shown in the above-mentioned embodiment of the invention. High-density and highly excited plasma can be uniformly generated, and a large diameter can be achieved.
【００６１】まず、誘電体板上に３つ以上の同心環状の
電極からなる高周波電力導入部を設けたので、半径方向
に均一なプラズマが形成でき、膜形成及びエッチングを
良好に行うことができる。First, since the high-frequency power introduction part composed of three or more concentric annular electrodes is provided on the dielectric plate, uniform plasma can be formed in the radial direction, and film formation and etching can be favorably performed. .
【００６２】また、誘電体板上に複数個の円板状電極と
円板状電極と間隔を有し、かつ外周電極からなる高周波
電力導入部を設けたので、誘電体板上のどの点において
も同じ電界強度を発生することができる。すなわち、均
一なプラズマを発生することができ、膜形成及びエッチ
ングを良好に行うことができる。Further, since a plurality of disc-shaped electrodes and a disc-shaped electrode are provided on the dielectric plate and a high-frequency power introducing section composed of outer peripheral electrodes is provided, at any point on the dielectric plate. Can generate the same electric field strength. That is, uniform plasma can be generated, and film formation and etching can be favorably performed.
【００６３】また、同心環状電極の電極間隔および円板
状電極と外周電極との電極間隔を高周波の波長の半分以
下にすることにより、電極間の電界強度を増大されるこ
とができるので、効率よくプラズマを発生できる。Further, the electric field strength between the electrodes can be increased by setting the electrode interval between the concentric annular electrodes and the electrode interval between the disk-shaped electrode and the outer peripheral electrode to be half the wavelength of the high frequency or less. It can generate plasma well.
【００６４】さらに、高周波電力導入部として、第１誘
電体板上に形成した複数個の電極、電極を含む第１誘電
体板上に第１誘電体板の誘電率より大きな第２誘電体、
及び第１誘電体の背面の導体によって構成されることに
よって、効率よく高周波電力を基板側に放射でき、高密
度、高励起のプラズマを発生できる。また、電極上に第
２誘電体があるので、不純物の混入を防ぐことができ
る。Further, as the high frequency power introducing portion, a plurality of electrodes formed on the first dielectric plate, a second dielectric having a dielectric constant higher than that of the first dielectric plate on the first dielectric plate including the electrodes,
Further, by being configured by the conductor on the back surface of the first dielectric, high frequency power can be efficiently radiated to the substrate side, and high density and highly excited plasma can be generated. Moreover, since the second dielectric is provided on the electrodes, it is possible to prevent impurities from being mixed.
【００６５】また、複数個の電極として、同心環状電極
または、円板状電極と円板状電極を囲む外周電極にする
ことによって、均一なプラズマが発生でき、膜形成及び
エッチングを良好に行うことができる。Further, by using a concentric annular electrode or a disc-shaped electrode and an outer peripheral electrode surrounding the disc-shaped electrode as the plurality of electrodes, uniform plasma can be generated, and film formation and etching can be performed well. You can
【００６６】また、第１誘電体板の背面と導体の間でか
つ電極間の位置に複数個の永久磁石を配置し、さらに磁
石の極性を第１誘電体板の中心から交互に変え、電極間
の位置の磁界強度として印加高周波の周波数で決まる電
子サイクロトロン共鳴条件の強度以上にすることによっ
て、高密度、高励起のプラズマが発生でき、かつ大口径
化を図ることができる。A plurality of permanent magnets are arranged between the back surface of the first dielectric plate and the conductors and at the positions between the electrodes, and the polarities of the magnets are alternately changed from the center of the first dielectric plate. By setting the magnetic field strength at a position between them to be equal to or higher than the strength of the electron cyclotron resonance condition determined by the frequency of the applied high frequency, plasma with high density and high excitation can be generated, and the diameter can be increased.
【図１】本発明の一発明の実施の形態の薄膜形成装置の
断面図FIG. 1 is a sectional view of a thin film forming apparatus according to an embodiment of the present invention.
【図２】本発明の一発明の実施の形態の薄膜形成装置の
電極付近の拡大平面図FIG. 2 is an enlarged plan view of the vicinity of electrodes of a thin film forming apparatus according to an embodiment of the present invention.
【図３】本発明の一発明の実施の形態のエッチング装置
の断面図FIG. 3 is a sectional view of an etching apparatus according to an embodiment of the present invention.
【図４】本発明の一発明の実施の形態のエッチング装置
の電極付近の拡大平面図FIG. 4 is an enlarged plan view of the vicinity of electrodes of the etching apparatus according to the embodiment of the present invention.
【図５】本発明の一発明の実施の形態の薄膜形成装置の
断面図FIG. 5 is a sectional view of a thin film forming apparatus according to an embodiment of the present invention.
【図６】本発明の一発明の実施の形態の薄膜形成装置の
電極付近の拡大平面図FIG. 6 is an enlarged plan view of the vicinity of electrodes of a thin film forming apparatus according to an embodiment of the present invention.
【図７】本発明の一発明の実施の形態のエッチング装置
の断面図FIG. 7 is a sectional view of an etching apparatus according to an embodiment of the present invention.
【図８】本発明の一発明の実施の形態のエッチング装置
の電極付近の拡大平面図FIG. 8 is an enlarged plan view of the vicinity of an electrode of the etching apparatus according to the embodiment of the present invention.
【図９】従来例のプラズマ装置の断面図FIG. 9 is a sectional view of a conventional plasma device.
１ 真空槽 ２ 基板 ３ 設置台 ４ 高周波電力導入部 ５ 誘電体板 ６ 同心環状電極 ７ マイクロ波源 ８ 成膜ガス供給口 ９ 成膜ガス供給口 １０ 試料 １１ エッチング用高周波電源 １２ 円板状電極 １３ 外周電極 １４ エッチングガス供給口 １５ 第１誘電体板 １６ 第２誘電体膜 １７ 導体 １８ 永久磁石 １９ 冷却水出入口 ２０ 放電室 ２１ マイクロ波導波管 ２２ 石英ガラス ２３ 電磁石 DESCRIPTION OF SYMBOLS 1 Vacuum tank 2 Substrate 3 Installation table 4 High frequency power introduction part 5 Dielectric plate 6 Concentric annular electrode 7 Microwave source 8 Film forming gas supply port 9 Film forming gas supply port 10 Sample 11 High frequency power supply for etching 12 Disc electrode 13 Outer periphery Electrode 14 Etching gas supply port 15 First dielectric plate 16 Second dielectric film 17 Conductor 18 Permanent magnet 19 Cooling water inlet / outlet 20 Discharge chamber 21 Microwave waveguide 22 Quartz glass 23 Electromagnet
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０５Ｈ 1/46 Ｈ０５Ｈ 1/46 Ｃ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Office reference number FI Technical display location H05H 1/46 H05H 1/46 C
Claims (19)
れた基板設置台及び誘電体板と、前記誘電体板上の前記
基板設置台と対向する面に形成された複数個の同心環状
の電極と、前記電極に接続された高周波源とを有するプ
ラズマ装置。1. A vacuum chamber, a substrate mounting base and a dielectric plate that are disposed facing each other in the vacuum chamber, and a plurality of dielectric plates formed on a surface of the dielectric plate that faces the substrate mounting base. A plasma device having a concentric annular electrode and a high frequency source connected to the electrode.
れた基板設置台及び誘電体板と、前記誘電体板上の前記
基板設置台と対向する面に形成された複数個の円板状電
極と、前記誘電体上に形成されるとともに複数個の前記
円板状電極と一定距離離間して前記円板状電極を囲むよ
うに形成された外周電極と、前記円板状電極及び前記外
周電極に接続された高周波源とを有するプラズマ装置。2. A vacuum chamber, a substrate mounting base and a dielectric plate that are disposed facing each other in the vacuum chamber, and a plurality of dielectric plates formed on a surface of the dielectric plate that faces the substrate mounting base. A disk-shaped electrode, an outer peripheral electrode formed on the dielectric and surrounding the disk-shaped electrodes at a predetermined distance from the disk-shaped electrodes, and the disk-shaped electrode And a high frequency source connected to the outer peripheral electrode.
れた基板設置台及び台１の誘電体板と、前記第１の誘電
体板上の前記基板設置台と対向する面に形成された複数
個の電極と、前記電極の形成された前記第１の誘電体板
上に形成された前記第１誘電体板より大きな誘電率を有
する第２の誘電体板と、前記第１の誘電体の前記電極の
形成されていない面上に形成された導体と、前記電極に
接続された高周波源とを有するプラズマ装置。3. A vacuum chamber, a substrate installation table and a dielectric plate of the table 1 installed to face each other in the vacuum chamber, and a surface of the first dielectric plate facing the substrate installation table. A plurality of electrodes formed, a second dielectric plate having a larger dielectric constant than the first dielectric plate formed on the first dielectric plate having the electrodes formed thereon, and the first dielectric plate. 2. A plasma device having a conductor formed on the surface of the dielectric material on which the electrode is not formed, and a high frequency source connected to the electrode.
らびに前記円板状電極と一定距離離間して前記円板状電
極を囲むように形成された外周電極であることを特徴と
する請求項３に記載のプラズマ装置。4. The electrode is a concentric annular electrode or a disc-shaped electrode, and an outer peripheral electrode formed so as to surround the disc-shaped electrode with a predetermined distance from the disc-shaped electrode. Item 3. The plasma device according to Item 3.
電極間の位置に複数個の永久磁石を配置したことを特徴
とする請求項３または４に記載のプラズマ装置。5. The plasma device according to claim 3, wherein a plurality of permanent magnets are arranged between the first dielectric plate and the conductor and between the plurality of electrodes.
れた基板設置台及び誘電体板と、前記誘電体板上の前記
基板設置台と対向する面に形成された複数個の同心環状
の電極と、前記電極に接続された高周波源とを有するプ
ラズマ装置を用いた薄膜形成方法であって、前記電極か
らなる高周波電力導入部から高周波電力を放射して前記
真空槽内にプラズマ領域を形成する工程と、前記真空槽
内に成膜用ガスを導入するとともに前記プラズマ領域内
で前記成膜用ガスを励起またはイオン化し、前記励起ま
たはイオン化された粒子を前記基板設置台上に設置され
た基板上に堆積させる工程とを有することを特徴とする
薄膜形成方法。6. A vacuum chamber, a substrate mounting base and a dielectric plate that are disposed facing each other in the vacuum chamber, and a plurality of dielectric plates formed on a surface of the dielectric plate that faces the substrate mounting base. A thin film forming method using a plasma device having a concentric annular electrode and a high-frequency source connected to the electrode, wherein high-frequency power is radiated from a high-frequency power introducing unit formed of the electrode to generate plasma in the vacuum chamber. A step of forming a region, and introducing a film forming gas into the vacuum chamber and exciting or ionizing the film forming gas in the plasma region, and the excited or ionized particles on the substrate setting table. And a step of depositing the thin film on an installed substrate.
波の波長の半分以下にしたことを特徴とする請求項６に
記載の薄膜形成方法。7. The method of forming a thin film according to claim 6, wherein the electrode interval of the concentric annular electrodes is set to be half the wavelength of the applied high frequency or less.
れた基板設置台及び誘電体板と、前記誘電体板上の前記
基板設置台と対向する面に形成された複数個の円板状電
極と、前記誘電体上に形成されるとともに複数個の前記
円板状電極と一定距離離間して前記円板状電極を囲むよ
うに形成された外周電極と、前記円板状電極及び前記外
周電極に接続された高周波源とを有するプラズマ装置を
用いた薄膜形成方法であって、前記円板状電極及び前記
外周電極からなる高周波電力導入部から高周波電力を放
射して前記真空槽内にプラズマ領域を形成する工程と、
前記真空槽内に成膜用ガスを導入するとともに前記プラ
ズマ領域内で前記成膜用ガスを励起またはイオン化し、
前記励起またはイオン化された粒子を前記基板設置台上
に設置された基板上に堆積させる工程とを有することを
特徴とする薄膜形成方法。8. A vacuum chamber, a substrate mounting base and a dielectric plate that are disposed facing each other in the vacuum chamber, and a plurality of dielectric plates formed on a surface of the dielectric plate that faces the substrate mounting base. A disk-shaped electrode, an outer peripheral electrode formed on the dielectric and surrounding the disk-shaped electrodes at a predetermined distance from the disk-shaped electrodes, and the disk-shaped electrode And a thin film forming method using a plasma device having a high-frequency source connected to the outer peripheral electrode, wherein the vacuum chamber is configured to radiate high-frequency power from a high-frequency power introducing unit composed of the disc-shaped electrode and the outer peripheral electrode. Forming a plasma region therein,
Introducing the film forming gas into the vacuum chamber and exciting or ionizing the film forming gas in the plasma region,
Depositing the excited or ionized particles on a substrate installed on the substrate installation table.
される高周波の波長の半分以下にしたことを特徴とする
請求項８に記載の薄膜形成方法。9. The method for forming a thin film according to claim 8, wherein the electrode interval between the disk-shaped electrode and the outer peripheral electrode is set to be half the wavelength of the applied high frequency or less.
された基板設置台及び台１の誘電体板と、前記第１の誘
電体板上の前記基板設置台と対向する面に形成された複
数個の電極と、前記電極の形成された前記第１の誘電体
板上に形成された前記第１誘電体板より大きな誘電率を
有する第２の誘電体板と、前記第１の誘電体の前記電極
の形成されていない面上に形成された導体と、前記電極
に接続された高周波源とを有するプラズマ装置を用いた
薄膜形成方法であって、前記電極からなる高周波電力導
入部から高周波電力を放射して前記真空槽内にプラズマ
領域を形成する工程と、前記真空槽内に成膜用ガスを導
入するとともに前記プラズマ領域内で前記成膜用ガスを
励起またはイオン化し、前記励起またはイオン化された
粒子を前記基板設置台上に設置された基板上に堆積させ
る工程とを有することを特徴とする薄膜形成方法。10. A vacuum chamber, a substrate installation base and a dielectric plate of the base 1 installed to face each other in the vacuum chamber, and a surface of the first dielectric plate facing the substrate installation base. A plurality of electrodes formed, a second dielectric plate having a larger dielectric constant than the first dielectric plate formed on the first dielectric plate having the electrodes formed thereon, and the first dielectric plate. A thin film forming method using a plasma device having a conductor formed on a surface of the dielectric body on which the electrode is not formed, and a high frequency source connected to the electrode, the high frequency power introduction comprising the electrode. A step of radiating high-frequency power from a part to form a plasma region in the vacuum chamber, and introducing a film forming gas into the vacuum chamber and exciting or ionizing the film forming gas in the plasma region, The excited or ionized particles are placed on the substrate. Thin film formation method characterized by a step of depositing on the substrate placed on the platform.
ならびに前記円板状電極と一定距離離間して前記円板状
電極を囲むように形成された外周電極であることを特徴
とする請求項１０に記載の薄膜形成方法。11. The electrode is a concentric annular electrode or a disk-shaped electrode, and an outer peripheral electrode formed so as to surround the disk-shaped electrode with a predetermined distance from the disk-shaped electrode. Item 10. The method for forming a thin film according to item 10.
体板と導体の間でかつ複数個の電極間の位置に複数個の
永久磁石を配置し、さらに前記磁石の極性を前記第１誘
電体板の中心から交互に変え、前記電極間の位置の磁界
強度として印加される高周波の周波数で決まる電子サイ
クロトロン共鳴条件以上の強度にしたことを特徴とする
請求項１０に記載の薄膜形成方法。12. The electrode is a concentric annular electrode, a plurality of permanent magnets are arranged between the first dielectric plate and the conductor and between the plurality of electrodes, and the polarity of the magnet is the first 11. The thin film formation according to claim 10, wherein the strength is set to be equal to or higher than the electron cyclotron resonance condition determined by the frequency of the high frequency applied as the magnetic field strength at the position between the electrodes, alternating from the center of one dielectric plate. Method.
された基板設置台及び誘電体板と、前記誘電体板上の前
記基板設置台と対向する面に形成された複数個の同心環
状の電極と、前記電極に接続された高周波源とを有する
プラズマ装置を用いたエッチング方法であって、前記電
極からなる高周波電力導入部から高周波電力を放射して
前記真空槽内にプラズマ領域を形成する工程と、前記真
空槽内にエッチング用ガスを導入するとともに前記プラ
ズマ領域内で前記エッチング用ガスを励起またはイオン
化し、前記励起またはイオン化された粒子を前記基板設
置台上に設置された基板上に照射させる工程とを有する
ことを特徴とするエッチング方法。13. A vacuum chamber, a substrate mounting base and a dielectric plate which are disposed facing each other in the vacuum chamber, and a plurality of dielectric plates formed on a surface of the dielectric plate facing the substrate mounting base. An etching method using a plasma device having a concentric annular electrode and a high-frequency source connected to the electrode, wherein high-frequency power is radiated from a high-frequency power introducing unit formed of the electrode to form a plasma region in the vacuum chamber. And a step of forming an etching gas into the vacuum chamber and exciting or ionizing the etching gas in the plasma region, and the excited or ionized particles were set on the substrate setting table. Etching a substrate.
周波の波長の半分以下にしたことを特徴とする請求項１
３に記載のエッチング方法。14. The electrode spacing of the concentric annular electrodes is set to half or less of the wavelength of the applied high frequency.
The etching method according to item 3.
された基板設置台及び誘電体板と、前記誘電体板上の前
記基板設置台と対向する面に形成された複数個の円板状
電極と、前記誘電体上に形成されるとともに複数個の前
記円板状電極と一定距離離間して前記円板状電極を囲む
ように形成された外周電極と、前記円板状電極及び前記
外周電極に接続された高周波源とを有するプラズマ装置
を用いたエッチング方法であって、前記円板状電極及び
前記外周電極からなる高周波電力導入部から高周波電力
を放射して前記真空槽内にプラズマ領域を形成する工程
と、前記真空槽内にエッチング用ガスを導入するととも
に前記プラズマ領域内で前記エッチング用ガスを励起ま
たはイオン化し、前記励起またはイオン化された粒子を
前記基板設置台上に設置された基板上に照射させる工程
とを有することを特徴とするエッチング方法。15. A vacuum chamber, a substrate mounting base and a dielectric plate installed in the vacuum chamber so as to face each other, and a plurality of substrates formed on a surface of the dielectric plate facing the substrate mounting base. A disk-shaped electrode, an outer peripheral electrode formed on the dielectric and surrounding the disk-shaped electrodes at a predetermined distance from the disk-shaped electrodes, and the disk-shaped electrode And a high-frequency source connected to the outer peripheral electrode, which is an etching method using a plasma device, wherein high-frequency power is radiated from a high-frequency power introducing unit formed of the disk-shaped electrode and the outer peripheral electrode, in the vacuum chamber. A step of forming a plasma region in the plasma chamber, introducing an etching gas into the vacuum chamber and exciting or ionizing the etching gas in the plasma region, and the excited or ionized particles on the substrate mounting table. Etching method characterized by a step for irradiating the installation has been on the substrate.
加される高周波の波長の半分以下にしたことを特徴とす
る請求項１５に記載のエッチング方法。16. The etching method according to claim 15, wherein the electrode interval between the disk-shaped electrode and the outer peripheral electrode is set to be half the wavelength of the applied high frequency or less.
された基板設置台及び台１の誘電体板と、前記第１の誘
電体板上の前記基板設置台と対向する面に形成された複
数個の電極と、前記電極の形成された前記第１の誘電体
板上に形成された前記第１誘電体板より大きな誘電率を
有する第２の誘電体板と、前記第１の誘電体の前記電極
の形成されていない面上に形成された導体と、前記電極
に接続された高周波源とを有するプラズマ装置を用いた
エッチング方法であって、前記電極からなる高周波電力
導入部から高周波電力を放射して前記真空槽内にプラズ
マ領域を形成する工程と、前記真空槽内にエッチング用
ガスを導入するとともに前記プラズマ領域内で前記エッ
チング用ガスを励起またはイオン化し、前記励起または
イオン化された粒子を前記基板設置台上に設置された基
板上に照射させる工程とを有することを特徴とするエッ
チング方法。17. A vacuum chamber, a substrate installation base and a dielectric plate of the base 1 installed to face each other in the vacuum chamber, and a surface of the first dielectric plate facing the substrate installation base. A plurality of electrodes formed, a second dielectric plate having a larger dielectric constant than the first dielectric plate formed on the first dielectric plate having the electrodes formed thereon, and the first dielectric plate. Of a dielectric formed on a surface of the dielectric on which the electrode is not formed, and a high-frequency source connected to the electrode, the etching method using a plasma device, comprising: Radiating high-frequency power from the step of forming a plasma region in the vacuum chamber, and introducing or etching gas into the vacuum chamber and exciting or ionizing the etching gas in the plasma region, the excitation or Ionized grain Etching method characterized by having a step of irradiating the substrate placed in the substrate holding table on a.
ならびに前記円板状電極と一定距離離間して前記円板状
電極を囲むように形成された外周電極であることを特徴
とする請求項１７に記載のエッチング方法。18. The electrode is a concentric annular electrode or a disc-shaped electrode, and an outer peripheral electrode formed so as to surround the disc-shaped electrode with a predetermined distance from the disc-shaped electrode. Item 18. The etching method according to Item 17.
体板と導体の間でかつ複数個の電極間の位置に複数個の
永久磁石を配置し、さらに前記磁石の極性を前記第１誘
電体板の中心から交互に変え、前記電極間の位置の磁界
強度として印加される高周波の周波数で決まる電子サイ
クロトロン共鳴条件以上の強度にしたことを特徴とする
請求項１７に記載のエッチング方法。19. The electrode is a concentric annular electrode, a plurality of permanent magnets are arranged between the first dielectric plate and the conductor and between the plurality of electrodes, and the polarity of the magnet is the first. 18. The etching method according to claim 17, wherein the strength is set to be equal to or higher than the electron cyclotron resonance condition determined by the frequency of the high frequency applied as the magnetic field strength at the position between the electrodes, alternately changing from the center of one dielectric plate. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7336474A JP2996162B2 (en) | 1995-12-25 | 1995-12-25 | Plasma device, thin film forming method and etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7336474A JP2996162B2 (en) | 1995-12-25 | 1995-12-25 | Plasma device, thin film forming method and etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09181048A true JPH09181048A (en) | 1997-07-11 |
| JP2996162B2 JP2996162B2 (en) | 1999-12-27 |
Family
ID=18299516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7336474A Expired - Fee Related JP2996162B2 (en) | 1995-12-25 | 1995-12-25 | Plasma device, thin film forming method and etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2996162B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6286454B1 (en) | 1999-05-31 | 2001-09-11 | Tadahiro Ohmi | Plasma process device |
| JP2003282434A (en) * | 2002-03-20 | 2003-10-03 | Ngk Insulators Ltd | ZnO-BASED EPITAXIAL GROWTH SUBSTRATE, ZnO-BASED EPITAXIAL GROWTH UNDERLYING SUBSTRATE, AND MANUFACTURING METHOD FOR ZnO-BASED FILM |
| KR20110056787A (en) * | 2009-11-23 | 2011-05-31 | 주성엔지니어링(주) | Substrate processing apparatus |
| US7992518B2 (en) * | 2007-02-27 | 2011-08-09 | Advanced Micro-Fabrication Equipment, Inc. Asia | Silicon carbide gas distribution plate and RF electrode for plasma etch chamber |
-
1995
- 1995-12-25 JP JP7336474A patent/JP2996162B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6286454B1 (en) | 1999-05-31 | 2001-09-11 | Tadahiro Ohmi | Plasma process device |
| US6446573B2 (en) | 1999-05-31 | 2002-09-10 | Tadahiro Ohmi | Plasma process device |
| JP2003282434A (en) * | 2002-03-20 | 2003-10-03 | Ngk Insulators Ltd | ZnO-BASED EPITAXIAL GROWTH SUBSTRATE, ZnO-BASED EPITAXIAL GROWTH UNDERLYING SUBSTRATE, AND MANUFACTURING METHOD FOR ZnO-BASED FILM |
| US7992518B2 (en) * | 2007-02-27 | 2011-08-09 | Advanced Micro-Fabrication Equipment, Inc. Asia | Silicon carbide gas distribution plate and RF electrode for plasma etch chamber |
| KR20110056787A (en) * | 2009-11-23 | 2011-05-31 | 주성엔지니어링(주) | Substrate processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2996162B2 (en) | 1999-12-27 |
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