JPH09171986A - Substrate cleaning apparatus and substrate cleaning method - Google Patents

Abstract

(57) Abstract: To provide a substrate cleaning apparatus which is non-contact and has high cleaning capability when cleaning a substrate by relatively translating the substrate and the cleaning mechanism. SOLUTION: An ultrasonic cleaning nozzle 10 and a high pressure cleaning nozzle 20 are installed side by side in one cleaning device. The ultrasonic cleaning nozzle 10 ejects the ultrasonic cleaning liquid F from the slit 13 in a curtain shape, and the high-pressure cleaning nozzle 20 ejects a high-pressure cleaning jet J toward the ultrasonic cleaning liquid F ejected on the substrate 1. The substrate 1 is cleaned while being translationally conveyed in the X direction, and not only the foreign matter removed by the ultrasonic cleaning but also the foreign matter removed by the high-pressure cleaning jet J are discharged to the outside of the substrate 1 by the flow of the ultrasonic cleaning liquid F. .

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a substrate cleaning technique, and more particularly, it has an ability to remove foreign matter adhering to a surface to be cleaned of a substrate and an ability to eject the removed foreign matter from the substrate to the outside. Related to technology for achieving both.

[0002]

Background Art As is well known, substrates such as glass substrates and semiconductor wafers for liquid crystal display devices are subjected to surface treatment with various treatment liquids. Then, after these treatments, it is necessary to remove the residual treatment liquid from the substrate. It is also important to remove particles attached to the substrate. The substrate is cleaned to remove such foreign matter, and the cleaning method therefor is roughly classified into chemical cleaning and physical cleaning.

Of these, the chemical cleaning uses not only pure water but also neutral or alkaline cleaning liquid,
In addition, there is one using ozone water in which ozone is dissolved in the cleaning liquid. Since such chemical cleaning is based on the principle of chemical melting, it is effective for removing relatively fine foreign substances and foreign substances chemically bonded to the substrate, but it is effective for removing relatively large foreign substances. Is small. For this reason, physical cleaning is often used in addition to chemical cleaning.

On the other hand, there are various methods for physical cleaning, and since they have advantages and disadvantages, sufficient physical cleaning is difficult with only one method. Therefore, in practice, a plurality of physical cleaning methods are often combined.

[0005]

Therefore, it has been proposed to carry out a plurality of physical cleaning methods in parallel in a single apparatus. For example, in Japanese Patent Laid-Open No. 7-86218, there is a brush cleaning method of cleaning with a rotating brush. There is disclosed an apparatus for simultaneously performing an ultrasonic cleaning method of cleaning with a liquid which is ultrasonically vibrated.

Performing a plurality of cleaning methods in one apparatus as in this technique is related to the time required for cleaning. That is, with the recent increase in the size of substrates, there is an increasing demand for shortening the time required for the cleaning process, and if cleaning devices of different methods are arranged in series and the cleaning process is performed sequentially, This is because the problem that the cleaning performance is not maintained due to the shortened time.

[0007]

However, another problem arises when the apparatus including the brush cleaning system as in the above-mentioned Japanese Patent Laid-Open No. 7-86218 is used. That is, although the brush cleaning method is excellent in the ability to remove foreign substances, it has a problem that it damages the surface of the substrate because it is a contact type physical cleaning.

The present invention has been made in order to overcome the problems of the prior art as described above, and damages the substrate when the substrate is cleaned while the substrate and the cleaning means are relatively translated. It is an object of the present invention to provide a substrate cleaning technique that can exhibit excellent cleaning ability without having to do so and has high time efficiency of cleaning processing.

In particular, the present invention aims to achieve both the ability to remove foreign matter adhering to the surface to be cleaned of the substrate and the ability to eject the removed foreign matter from the substrate to the outside.

The term "foreign matter" used in this specification means
In addition to the treatment liquid applied and remaining in the previous step of cleaning,
It is a general term for objects such as particles that should be removed by cleaning.

[0011]

[Principle of Guidance for Solving the Problems] In order to achieve the above object, the present invention is configured to perform combined cleaning of an ultrasonic cleaning method and a high pressure cleaning method. Before explaining its advantages, the advantages and disadvantages of each of these cleaning methods are examined as follows.

<Pros and Cons of Single Ultrasonic Cleaning> First, in the ultrasonic cleaning method, in order to perform cleaning while supplying a relatively large amount of liquid, a new cleaning liquid is rapidly supplied onto the substrate to remove foreign matters. It has a property that it is rich in the action of discharging the cleaning liquid to the outside from the substrate surface (liquid replacement property). However, since the foreign matter removing action by ultrasonic waves is not very strong, it is difficult to remove the foreign matter strongly adhered to the substrate surface by ultrasonic cleaning alone.

<Advantages and disadvantages of high-pressure cleaning alone> On the other hand, the high-pressure cleaning method is a method of removing foreign matter by the mechanical action of the high-pressure cleaning jet, and has an advantage of excellent foreign matter removal action. However, since this system only ejects a relatively small amount of liquid, the high pressure cleaning system alone has poor liquid replacement properties, and this system still has the problem of redeposition of foreign matter.

Although the problem of such re-adhesion can be solved to some extent by increasing the jet pressure of the high-pressure cleaning jet, however, increasing the jet pressure tends to damage the substrate surface and damage the circuit pattern formed on the substrate surface. And other problems such as uneven cleaning and uneven cleaning remain.

<Advantages of Combined Cleaning of Ultrasonic Cleaning and High Pressure Cleaning> Therefore, the present invention is configured to perform combined cleaning of the ultrasonic cleaning method and the high pressure cleaning method. If such a configuration is adopted, not only the foreign matter removed by the ultrasonic cleaning but also the foreign matter removed by the high pressure cleaning can be promptly removed from the substrate by the flow of the relatively large amount of liquid supplied in the ultrasonic cleaning. It is discharged to the outside.
Therefore, it is possible to prevent the foreign substances that have been removed from reattaching to the substrate surface while utilizing the strong cleaning ability of the high pressure cleaning, which is a new characteristic of the high pressure cleaning combined with the ultrasonic cleaning. It is an action.

Further, by combining the high-pressure cleaning with the ultrasonic cleaning, the foreign matter removing ability as a whole is enhanced. Therefore, it is not necessary to increase the pressure of the high-pressure cleaning jet so much in the high-pressure cleaning, and the high-pressure cleaning jet does not damage the substrate. No uneven cleaning occurs.

That is, in the present invention, the foreign matter removing ability in the high-pressure washing and the foreign matter discharging ability in the ultrasonic washing act synergistically to produce an effect more than the sum of these individual actions.

[0018]

In accordance with such a principle, the present invention is specifically configured as follows.

<First Invention> In the first invention, there is provided a cleaning means for cleaning the substrate and a translation means for relatively translating the substrate, and the substrate is moved by the cleaning means while performing the translation. In the apparatus for performing the cleaning scan of (a), the cleaning means (a) ultrasonic cleaning means for ejecting a liquid toward the substrate and emitting ultrasonic waves to the liquid to clean the substrate ultrasonically. ) The ultrasonic cleaning means is provided at a position different from that of the ultrasonic cleaning means, and includes a high-pressure cleaning means for ejecting a high-pressure liquid toward the substrate to perform high-pressure cleaning of the substrate. It is characterized by performing combined cleaning with high-pressure cleaning.

<Second Invention> According to the present invention, in the substrate cleaning apparatus of the first invention, the ultrasonic cleaning means is (a-
1) To an ultrasonic cleaning line defined on the surface to be cleaned of the substrate, an ultrasonic cleaning nozzle for ejecting the liquid in which ultrasonic waves are emitted from a slit is provided, and the high-pressure cleaning means comprises (b) -1) A high-pressure cleaning nozzle for ejecting the high-pressure liquid toward an array of high-pressure cleaning spots defined on the surface to be cleaned of the substrate is provided.

That is, in this apparatus, ultrasonic cleaning is performed linearly and high-pressure cleaning is performed in a dot arrangement on the surface to be processed of the substrate.

<Third Invention> According to the present invention, in the substrate cleaning apparatus according to the second invention, (d) the high-pressure cleaning nozzle rocks to rock the high-pressure cleaning nozzle along the direction of the arrangement of the high-pressure cleaning spots. Means are further provided.

<Fourth Invention> According to the present invention, in the substrate cleaning apparatus according to the second or third invention, the high-pressure cleaning nozzles are provided on both sides of the ultrasonic cleaning nozzle so that the high-pressure liquid cleaning spot can be removed. Arrays are defined on both sides of the ultrasonic cleaning line.

A typical application example of the fourth invention and the following fifth invention is shown in FIG. 1 among various embodiments described later.
The substrate cleaning apparatus 100 shown in FIG.

<Fifth Invention> In the present invention, in the substrate cleaning apparatus of the fourth invention, the ultrasonic cleaning nozzle discharges the liquid substantially at right angles to the surface to be cleaned of the substrate,
The high-pressure cleaning nozzle ejects the high-pressure liquid in a direction that is substantially the same as or away from the direction of discharge of the liquid from the ultrasonic cleaning nozzle.

<Sixth Invention> According to the present invention, in the substrate cleaning apparatus according to the second or third invention, the substrate is conveyed relative to the cleaning means in one predetermined direction, and the high pressure is applied. The array of cleaning spots is set at a position where the substrate is scanned before the ultrasonic cleaning line in the one predetermined direction.

A typical application example of the sixth invention and the following seventh invention is shown in FIG. 2 among various embodiments described later.
The substrate cleaning apparatus 200 shown in FIG.

<Seventh Invention> According to the present invention, in the substrate cleaning apparatus according to the sixth invention, the ultrasonic cleaning nozzle tilts toward the predetermined direction with respect to the surface to be cleaned of the substrate, and the liquid. The high-pressure cleaning nozzle is provided only on one side of the ultrasonic cleaning nozzle that is opposite to the predetermined direction in the conveyance, and the high-pressure cleaning nozzle discharges the liquid from the ultrasonic cleaning nozzle. The high-pressure liquid is ejected in a direction that is substantially the same as or greater than the direction.

<Eighth to Tenth Inventions> These inventions are
The invention is a method invention corresponding to the first to third apparatus inventions, respectively, and its configuration and action can be understood from the description of the configuration of the apparatus invention and the following description of the embodiments.
The duplicate description here is omitted.

[0030]

BEST MODE FOR CARRYING OUT THE INVENTION

First Embodiment Mechanical Structure: FIG. 1 is a perspective view of an essential part of a substrate cleaning apparatus according to a first embodiment of the present invention.
00 is the glass substrate 1 for liquid crystal display device and the combined cleaning mechanism 50.
Is relatively translated, and the composite cleaning of ultrasonic cleaning and high-pressure cleaning is performed on the substrate 1 in parallel in time. First, the substrate 1 to be cleaned is translated and conveyed in the X direction in the figure by the arrangement of the rollers 60. Although a motor M is provided for this conveyance drive, the connection between the motor M and the conveyance roller is omitted in FIG. 1 for convenience of illustration.

A composite cleaning mechanism 50 is provided above the transfer path of the substrate 1. The composite cleaning mechanism 50 is provided with high pressure cleaning nozzles 20 near both sides of the ultrasonic cleaning nozzle 10.
A and 20B are arranged. Of these, the ultrasonic cleaning nozzle 10 has an internal configuration described later, and is fixed from the outside of the substrate 1 by a fixing arm (not shown). This ultrasonic cleaning nozzle 10 has a width in the Y direction of the substrate 1 or a length longer than that, and discharges the cleaning liquid, to which ultrasonic waves are emitted, from the slit to the surface of the substrate 1 in a curtain shape.

FIG. 2A is a conceptual front perspective view of the ultrasonic cleaning nozzle 10, and FIG. 2B is this ultrasonic cleaning nozzle 1.
It is a conceptual plane perspective view (part) of 0. The ultrasonic cleaning nozzle 10 uses the cleaning liquid F introduced from the cleaning liquid inlet 12.
On the other hand, ultrasonic waves are emitted from the ultrasonic transducer 11, and the cleaning liquid F is discharged from the lower slit 13.

A high-frequency oscillating voltage is supplied to the ultrasonic oscillator 11, and the preferable range of the frequency is 0.8.
MHz to 2.0 MHz, and more preferably 1.
It is 2 MHz to 1.8 MHz.

The cleaning liquid inlet 12 is connected to a resin tube 15 (see FIG. 1), and this tube 15 is connected to a cleaning liquid supply section.

On the other hand, the high pressure cleaning nozzles 20A, 20 of FIG.
Each of B has a one-dimensional array of needle-shaped nozzle tips 21 having ejection ports each having a circular cross-section (only some of them are designated by reference numeral 21 in FIG. 1). These nozzle tips 21 eject the high-pressure jet cleaning liquid supplied from the high-pressure cleaning liquid supply unit via the resin tube 25 onto the surface of the substrate 1 in a beam-like shape. Nozzle tip 21 in each of the high pressure cleaning nozzles 20A and 20B
The array length of is the width of the substrate 1 in the Y direction or longer.

The pressure of the high-pressure cleaning liquid applied to the high-pressure cleaning nozzles 20A and 20B is preferably 5 kg / cm ² to.
15 kg / cm ² , more preferably 8 kg / cm ^2.
It is cm ^{2 to} 10 kg / cm ² .

Further, each of the high-pressure cleaning nozzles 20A and 20B is connected to a swing actuator 51 using a link mechanism or the like, and by this swing actuator 51, a direction Y orthogonal to the translational direction X of the substrate 1, that is, a nozzle. The chips 21 are swung with a predetermined swing amplitude along the arrangement direction. The swing amplitude is set to be approximately equal to or larger than the arrangement interval of the nozzle tips 21 in the Y direction. However, when the nozzle chips 21 are closely arranged in the Y direction or when the high-pressure cleaning nozzles 20A and 20B are slit-shaped, high-pressure cleaning is possible over the entire width of the substrate 1 in the Y direction without rocking. Therefore, the swing actuator 51 is omitted and the high pressure cleaning nozzles 20A, 20
B may be fixed from the outside of the substrate 1.

FIG. 3 is a diagram showing the positional relationship between the ultrasonic cleaning nozzle 10 and the high-pressure cleaning nozzles 20A and 20B in this apparatus 100. The ultrasonic cleaning nozzle 10 is the substrate 1
The ultrasonic cleaning liquid F is arranged so as to be ejected in a curtain shape toward the virtual ultrasonic cleaning line L defined on the surface of the substrate 1. The ejection direction is substantially perpendicular to the surface of the substrate 1.

On the other hand, the high-pressure cleaning nozzles 20A and 20B are arranged on both sides of the ultrasonic cleaning nozzle 10, and the high-pressure cleaning liquid tilts away from the ejection direction of the ultrasonic cleaning liquid F from the ultrasonic cleaning nozzle 10. Eject a jet.
The axis of this jet is directed to virtual high-pressure cleaning spots PA and PB defined on the surface of the substrate 1.

FIG. 4 is a plan view of these positional relationships.
It is. As described with reference to FIG. 3, since the ultrasonic cleaning line L is directly below the slit 13 of the ultrasonic cleaning nozzle 10, the ultrasonic cleaning line L overlaps the slit 13 in FIG. 4. Further, since each of the high-pressure cleaning nozzles 20A and 20B has a large number of nozzle tips 21, each of the high-pressure cleaning spots PA and PB has a one-dimensional array, and these are arranged in the ultrasonic cleaning line L. It is arranged in parallel with this line L in the vicinity.

General operation: Before explaining the details of the cleaning operation of the apparatus 100, an outline of the cleaning operation of the apparatus 100 will be described. First, the substrate 1 is conveyed in the X direction from the upper left direction in FIG. Discharge of the ultrasonic cleaning liquid from the ultrasonic cleaning nozzle 10 and the high-pressure cleaning nozzle 2 until the tip of the substrate 1 reaches the vicinity of the composite cleaning mechanism 50.
Ejection of the high-pressure cleaning liquid from 0A and 20B is started. In addition, the high-pressure cleaning nozzle 20 using the swing actuator 51
The oscillations of A and 20B start with the same amplitude and the same phase.

The substrate 1 is subjected to a combined cleaning of ultrasonic cleaning and high pressure cleaning while being conveyed in translation in the X direction. Then, this composite cleaning is performed until the rear end of the substrate 1 passes the composite cleaning mechanism 50, and when the cleaning is completed, the substrate 1 becomes X.
Direction is further conveyed and transferred to the apparatus for the next step (drying step, etc.).

Details of combined cleaning: In the combined cleaning of this embodiment, as can be seen from FIG. 3, a jet J of high-pressure cleaning liquid is jetted into the ultrasonic cleaning liquid F discharged from the ultrasonic cleaning nozzle 10. When attention is paid to an arbitrary position on the substrate 1, the position is first exposed to the high-pressure cleaning jet J from one high-pressure cleaning nozzle 20B as it is conveyed in the X direction. There is a flow of sonic cleaning liquid F. Therefore, the foreign matter removed by the high pressure cleaning is washed away by the flow of the ultrasonic cleaning liquid F and does not reattach to the surface of the substrate 1. In addition, the high pressure cleaning nozzle 2
By oscillating 0A and 20B, the high-pressure cleaning jet J moves in the ultrasonic cleaning liquid F, and a cavitation effect due to bubbling occurs inside the cleaning liquid supplied to the substrate surface, and the cleaning ability is further enhanced.

As the conveyance in the X direction progresses, the arbitrary position on the substrate 1 reaches a position immediately below the ultrasonic cleaning nozzle 10 and undergoes ultrasonic cleaning there. The foreign matter removed by this ultrasonic cleaning is also washed away by the flow of the ultrasonic cleaning liquid F.

When the transfer in the X direction further proceeds, the arbitrary position on the substrate 1 is then subjected to high pressure cleaning by the other high pressure cleaning 20A. The operation in the second high-pressure cleaning is similar to that in the first high-pressure cleaning. Note that the transport speed of the substrate 1 in the X direction is slower than the swing speed of the high-pressure cleaning nozzles 20A and 20B, and the high-pressure cleaning spots PA and PB on the surface of the substrate 1 in the plane relationship of FIG. Even at the position deviated in the Y direction from, it is possible to receive high-pressure cleaning by the swinging of the high-pressure cleaning nozzles 20A and 20B.

When the high-pressure cleaning jet J is jetted toward the ultrasonic cleaning line L, the water flow of the high-pressure cleaning jet J hinders the transmission of ultrasonic waves to the ultrasonic cleaning liquid F.

Further, since the flow rate of the ultrasonic cleaning liquid F is considerably large at the position of the ultrasonic cleaning line L, it is possible that the efficiency of the high-pressure cleaning jet J reaching the surface of the substrate 1 is reduced due to being obstructed by the excessive ultrasonic cleaning liquid. There is a nature.

On the other hand, in this embodiment, the high-pressure cleaning jet J is ejected toward the high-pressure cleaning spots PA and PB which are set at the positions slightly apart from the ultrasonic cleaning line L. The flow rate of the ultrasonic cleaning liquid F in is a proper amount, and the efficiency of high pressure cleaning is particularly high.

On the other hand, the fact that the direction of the high-pressure cleaning jet J from the high-pressure cleaning nozzles 20A and 20B is inclined in the direction away from the ultrasonic cleaning line L is related to the improvement of the discharging action of the foreign matter removed by the high-pressure cleaning. ing. Taking the high-pressure cleaning nozzle 20B as an example, the foreign matter removed by the high-pressure cleaning is removed by the force of the high-pressure cleaning jet J in FIG.
To the left (that is, the direction of flow of the ultrasonic cleaning liquid F) has a velocity component. For this reason, the action of riding the flow of the ultrasonic cleaning liquid F to be discharged to the outside of the substrate 1 is promoted, and the effect of discharging the removed foreign matter is further enhanced. The high-pressure cleaning jet J from the other high-pressure cleaning nozzle 20A is also in the opposite direction, but the operation is the same.

FIG. 5 generalizes the relationship between the high-pressure cleaning jet J for giving such an action and the discharge direction of the ultrasonic cleaning liquid. Due to the above reasons, the high pressure cleaning jets J from the high pressure cleaning nozzles 20A and 20B respectively.
It is preferable that the inclination angles θA and θB from the ejection direction of the ultrasonic cleaning liquid are positive values. However, if it is desired to maximize the jet pressure by ejecting the high-pressure cleaning jet J at a right angle to the surface of the substrate 1, then θA = 0, θB
It is also possible to set = 0. In this case, there is no action of promoting the discharge of the foreign matter removed by the high pressure cleaning, but in the action of not returning the foreign matter to the ultrasonic cleaning line L side, the same as when the inclination angles θA and θB are positive values. Is.

Although the effect of the present invention is not denied even if the tilt angles θA and θB are negative values, it is preferable that they are positive values as described above. When the inclination angles θA and θB are positive values, the upper limits of these angles θA and θB are determined according to the minimum value of the jet pressure required to remove the foreign matter on the substrate 1.

<Second Embodiment> FIG. 6 shows a second embodiment of the present invention.
FIG. 3 is a perspective view of a main part of the substrate cleaning apparatus 200 according to the embodiment. Hereinafter, regarding this device 200, the device 100 of FIG.
The difference will be mainly described.

In the apparatus 200 of FIG. 6, the combined cleaning mechanism 5
At 0a, the ultrasonic cleaning nozzle 10 is tilted in the direction opposite to the transport direction X of the substrate 1. Further, the high-pressure cleaning nozzle 20 is provided only on the opposite side of the substrate 1 in the transport direction X. Then, as shown in FIG. 7, the ultrasonic cleaning nozzle 10
The discharge direction of the ultrasonic cleaning liquid F from the direction is the transfer direction X of the substrate 1.
And the high-pressure cleaning jet J from the high-pressure cleaning nozzle 20 has the same inclination, and the arrangement of the high-pressure cleaning spots P in the transport direction X is before the ultrasonic cleaning line L. The position is set to scan the substrate 1. This state is also shown in FIG. 8, which is a plan view of each nozzle.

Returning to FIG. 7, in this arrangement, the substrate 1
Any point of is first subjected to high pressure cleaning, followed by ultrasonic cleaning. This is not prohibited, but
By arranging as shown in FIG. 7, the high pressure cleaning jet J
It is particularly effective to prevent the foreign matter removed in step 1 from returning to the vicinity of the ultrasonic cleaning line L, and the efficiency of ultrasonic cleaning is increased.

FIG. 9 is referred to for the angular relationship of each cleaning. In FIG. 9, the angle φ indicates the inclination angle of the ultrasonic cleaning liquid in the discharge direction from the vertical direction, and the other angle θ.
Indicates the tilt angle of the high-pressure cleaning jet J from the discharge direction of the ultrasonic cleaning liquid. Here, the angle φ is set to a positive value, but it does not return to the ultrasonic cleaning line L again because the foreign matter removed by ultrasonic cleaning flows to the right side in FIG. 9 by the conveyance of the substrate 1 in the X direction. Has the effect of Further, the angle θ is preferably zero or a positive value, which promotes the foreign matter removed by the high pressure cleaning to flow in the direction opposite to the transport direction X. The upper limit value when the angle θ is a positive value is determined according to the jet pressure required on the surface of the substrate 1.

The general effect of the combined cleaning of ultrasonic cleaning and high-pressure cleaning in the apparatus 200 of FIG. 6 having such a configuration is the same as that described for the apparatus 100 of FIG. Further, since the rest of the configuration is the same as that of the device 100 of FIG. 1, duplicate description will be omitted.

<Third Embodiment> FIG. 10 is a perspective view of an essential part of a substrate cleaning apparatus 300 according to a third embodiment of the present invention as seen from below. This apparatus 300 cleans the back surface of the substrate 1. Is configured to. The difference from the first embodiment will be mainly described. The combined cleaning mechanism 50b of the apparatus 300 is arranged on the back side (lower side) of the substrate 1. The arrangement relationship between the ultrasonic cleaning nozzle 10 and the high-pressure cleaning nozzle 10 is a relationship in which the nozzles in the apparatus 200 of the second embodiment of FIG. 6 are turned upside down with the substrate 1 as the target surface. However, in order to prevent interference with the composite cleaning mechanism 50b, the roller 60 for transferring the substrate is
It is provided so as to avoid the vicinity of the composite cleaning mechanism 50b. Note that, as in FIG. 1 and the like, the transport drive motor M for the substrate 1 is conceptually drawn.

The cleaning principle of the apparatus 100 of the third embodiment is the same as that of the second embodiment, but since the ultrasonic cleaning liquid is discharged obliquely upward toward the back surface of the substrate 1, it is shown in FIG. As described above, the ultrasonic cleaning liquid F flows below the substrate 1 after flowing a certain distance along the back surface of the substrate 1 due to its surface tension. Therefore, the high-pressure cleaning jet J is ejected toward the range where the ultrasonic cleaning liquid F is still flowing along the back surface of the substrate 1.

This back surface cleaning can be combined with the front surface cleaning of the first or second embodiment to perform double-sided cleaning. Further, the substrate 1 may be stood up and transported, and the combined cleaning may be performed from both side surfaces thereof.

<Modification> FIG. 12 is a plan view showing the positional relationship of each nozzle in a modification of the present invention. In the high-pressure cleaning nozzles 20C and 20D of this modified example, the high-pressure cleaning jet J is ejected using the slit 23. In order to secure the pressure of the high-pressure cleaning jet J at the time of jetting without increasing the pressure on the supply side of the high-pressure jet so much,
The configuration in which a beam-shaped jet is ejected as in the above embodiment is preferable, but as shown in FIG.
A curtain-shaped one using 3 may be used. In this case, rocking of the high pressure cleaning nozzles 20C and 20D is unnecessary.

FIG. 13 is a plan view of the main part of another modification.
In the combined cleaning mechanism 50c of this example, the ultrasonic cleaning nozzle 10 is used.
As the S and high pressure cleaning nozzles 20E and 20F, the substrate 1
Is shorter than the width in the Y direction. In this case, the connecting member 52 and the arm 53 are connected to the swing actuator 54, and the nozzles 10S, 20E, 20F are
Swing scanning is performed in the Y direction over the entire width of the substrate 1. The internal configuration and operation of each of the nozzles 10S, 20E, 20F are the same as in the first embodiment. Alternatively, one high-pressure cleaning jet outlet of the high-pressure cleaning nozzle may be set to swing over the entire width of the substrate 1. However, in these aspects,
Since it takes a considerable time to oscillate when the size of the substrate 1 is large, it is preferable to provide a plurality (preferably a large number) of high-pressure cleaning jet jet ports and not make the oscillation width too large.

Although the substrate 1 is translated and conveyed in each of the above embodiments, the compound cleaning mechanism side may be translated in the X direction or the opposite direction. It is also possible to combine both. Relative translation between the substrate and the combined cleaning mechanism may be reciprocal translation rather than unilateral translation in one direction.

Further, the present invention can be utilized for various substrate cleaning mainly for substrates for electronic devices such as semiconductor wafers in addition to glass substrates for liquid crystal display devices.

[0064]

EXAMPLES Table 1 shows the results of confirming the cleaning effect in the apparatus of the embodiment shown in FIG. In Table 1, the two cases of high pressure jet cleaning only and ultrasonic cleaning only are shown together for comparison. The experimental conditions are as follows.

Type of substrate 1: Glass substrate for liquid crystal display device having a chrome film formed on the surface; Planar size of substrate 1 ... 360 mm × 465 mm; Transport speed of substrate 1 ... 1.2 m / min; Size and number of nozzle tips 21 ... 18 nozzle tips with a discharge diameter of 0.1 mm
Number of jets supplied to the high-pressure cleaning nozzle 20 ... 15 kgf / c
m ² ; ultrasonic power in the ultrasonic cleaning nozzle 10 ... 500
W: Flow rate of ultrasonic cleaning liquid in the ultrasonic cleaning nozzle 10 ... 3
0 liter / min; Measuring method: Count the number of particles with a size of 1 μm or more before and after cleaning

[0066]

[Table 1]

As can be seen from Table 1, the combined use of the high pressure jet and ultrasonic waves in the embodiment of the present invention
It can be seen that the effect of removing particles is improved as compared with the case of each of these alone.

The difference is that the removal rate is 2.3% to 5.
Although it is about 2%, even a slight difference in the number of residual particles in a glass substrate for a liquid crystal display device or the like greatly affects the yield of the substrate after cleaning. Therefore, it can be seen that the embodiment of the present invention gives excellent results as compared with each cleaning method alone.

[0069]

As described above, according to the first to tenth aspects of the present invention, by performing the combined cleaning of ultrasonic cleaning and high pressure cleaning, the foreign matter removing ability and the foreign matter, which are the advantages of the respective cleaning methods, can be obtained. The discharge capacity works synergistically to improve the substrate cleaning capacity.

In particular, since the foreign substances removed by the high-pressure cleaning are quickly discharged by the ultrasonic cleaning liquid rich in them, the cleaning performance is further enhanced as compared with the case where these cleaning methods are individually executed by another device.

Further, in the combined cleaning of the present invention, the non-contact type cleaning method is combined, and a sufficient cleaning ability is realized by their synergistic effect, so that it is not necessary to excessively increase the pressure of the high pressure cleaning. Therefore, no damage such as scratches is given to the substrate, and cleaning unevenness does not occur.

In particular, by rocking the high-pressure cleaning as in the third and tenth aspects of the invention, a cavitation effect due to bubbling is generated inside the cleaning liquid supplied to the surface of the substrate, and the cleaning ability is further enhanced. it can.

Further, as in the fifth and seventh inventions, the high pressure cleaning liquid is jetted in the same direction as or in a direction inclined with respect to the discharge direction of the ultrasonic cleaning liquid, whereby the foreign matter removed by the high pressure cleaning is ultrasonically cleaned. Since it is possible to prevent the line from returning to the line side, compatibility between the foreign matter removal capability and the foreign substance removal capability becomes more efficient.

[Brief description of the drawings]

FIG. 1 is a perspective view of essential parts of a substrate cleaning apparatus according to a first embodiment of the present invention.

FIG. 2 is a view showing details of the ultrasonic cleaning nozzle 10.

FIG. 3 is an enlarged view of the positional relationship between the nozzles 10, 20A and 20B as seen from a direction orthogonal to the longitudinal direction of the ultrasonic cleaning nozzle 10.

FIG. 4 is a conceptual plan view of the positional relationship of each nozzle 10, 20A, 20B as seen from above.

FIG. 5 is an explanatory diagram of the positions of the ejection direction of the ultrasonic cleaning liquid from the ultrasonic cleaning nozzle 10 and the ejection direction of the high-pressure cleaning jet J from the high-pressure cleaning nozzles 20A and 20B.

FIG. 6 is a perspective view of essential parts of a substrate cleaning apparatus according to a second embodiment of the present invention.

7 is an enlarged view of the positional relationship between the nozzles 10 and 20 as seen from a direction orthogonal to the longitudinal direction of the ultrasonic cleaning nozzle 10. FIG.

FIG. 8 is a conceptual plan view of the positional relationship between the nozzles 10 and 20 as viewed from above.

FIG. 9 is an explanatory diagram of the positions in the ejection direction of the ultrasonic cleaning liquid from the ultrasonic cleaning nozzle 10 and the ejection direction of the high-pressure cleaning jet J from the high-pressure cleaning nozzle 20.

FIG. 10 is a perspective view of essential parts of a substrate cleaning apparatus according to a third embodiment of the present invention.

FIG. 11 is a diagram showing a positional relationship between nozzles 10 and 20.

FIG. 12: Nozzles 10 and 2 in a modification of the present invention
It is a conceptual top view which shows the positional relationship of 0.

FIG. 13 is a plan view of an essential part of another modification of the present invention.

[Explanation of symbols]

 1 Substrate 10 Ultrasonic Cleaning Nozzle 20, 20A to 20F High Pressure Cleaning Nozzle 21 High Pressure Cleaning Nozzle Chip 50 Composite Cleaning Mechanism 100, 200, 300 Substrate Cleaning Device L Ultrasonic Cleaning Line P, PA, PB High Pressure Cleaning Spot F Ultrasonic Cleaning Solution J High-pressure cleaning jet X Substrate transport direction Y High-pressure cleaning nozzle swing direction

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Kazuo Kise Inventor Kazuo Kise 1 480 Takamiyacho, Hikone City, Shiga Dai Nippon Screen Mfg. Co., Ltd., Hikone District Office Address 1015, within Fujitsu Limited (72) Inventor Kazuhiro Watanabe Kamiodanaka, Nakahara-ku, Kawasaki, Kanagawa 1015 Address within Fujitsu Limited

Claims (10)

[Claims] 1. An apparatus comprising a cleaning means for cleaning a substrate and a translation means for relatively translating the substrate, wherein the cleaning means scans the substrate while performing the translation. The cleaning means comprises: (a) an ultrasonic cleaning means for ejecting a liquid toward a substrate while emitting ultrasonic waves to the liquid to ultrasonically clean the substrate; and (b) the ultrasonic cleaning means. Provided in different positions,
High-pressure cleaning means for ejecting a high-pressure liquid toward the substrate for high-pressure cleaning of the substrate, and performing combined cleaning of the ultrasonic cleaning and the high-pressure cleaning on the substrate. Substrate cleaning equipment. 2. The substrate cleaning apparatus according to claim 1, wherein the ultrasonic cleaning means emits ultrasonic waves toward (a-1) an ultrasonic cleaning line defined on the surface to be cleaned of the substrate. With the ultrasonic cleaning nozzle for ejecting the liquid from the slit, the high-pressure cleaning means comprises: (b-1) the high-pressure liquid toward an array of high-pressure cleaning spots defined on the surface to be cleaned of the substrate. A substrate cleaning apparatus comprising a high-pressure cleaning nozzle for ejecting 3. The substrate cleaning apparatus according to claim 2, wherein: (d) a high-pressure cleaning nozzle swinging unit that swings the high-pressure cleaning nozzles along the direction of arrangement of the high-pressure cleaning spots.
A substrate cleaning apparatus further comprising: 4. The substrate cleaning apparatus according to claim 2, wherein the high-pressure cleaning nozzles are provided on both sides of the ultrasonic cleaning nozzle so that the array of the high-pressure liquid cleaning spots is the ultrasonic cleaning. A substrate cleaning device characterized by being defined on both sides of a line. 5. The substrate cleaning apparatus according to claim 4, wherein the ultrasonic cleaning nozzle discharges the liquid at a substantially right angle to a surface to be cleaned of the substrate, and the high-pressure cleaning nozzle is the ultrasonic wave. A substrate cleaning apparatus, characterized in that the high-pressure liquid is jetted at an angle substantially the same as the direction of discharge of the liquid from the cleaning nozzle or a direction away from the direction. 6. The substrate cleaning apparatus according to claim 2 or 3, wherein the substrate is transported relative to the cleaning means in one predetermined direction, and the high-pressure cleaning spots are arranged in an array. A substrate cleaning apparatus, wherein the substrate cleaning device is set at a position where the substrate is scanned before the ultrasonic cleaning line in the one predetermined direction. 7. The substrate cleaning apparatus according to claim 6, wherein the ultrasonic cleaning nozzle discharges the liquid while inclining toward the predetermined direction with respect to the surface to be cleaned of the substrate, and the high pressure cleaning. The nozzle is provided only on a side corresponding to a direction opposite to the predetermined direction in the conveyance on both sides of the ultrasonic cleaning nozzle, and is substantially the same as or more than a direction of discharging the liquid from the ultrasonic cleaning nozzle. A substrate cleaning apparatus, characterized in that the high-pressure liquid is jetted in a largely inclined direction. 8. A method of performing a cleaning scan of a substrate while translating a cleaning execution position and a substrate relative to each other, ultrasonic cleaning for ejecting a liquid from which ultrasonic waves are emitted toward the substrate, and a high-pressure liquid. The method of cleaning a substrate is characterized in that the high-pressure cleaning of ejecting the liquid toward the substrate is performed in parallel in time in the same apparatus. 9. The substrate cleaning method according to claim 8, wherein in the ultrasonic cleaning, ultrasonic waves are emitted from the liquid toward the ultrasonic cleaning line defined on the surface to be cleaned of the substrate. The high-pressure cleaning is performed by ejecting from the cleaning nozzle, and the high-pressure cleaning is performed by ejecting the high-pressure liquid from the high-pressure cleaning nozzle toward an array of high-pressure cleaning spots defined on the surface to be cleaned of the substrate. A method for cleaning a substrate, comprising: 10. The substrate cleaning method according to claim 9, wherein the high pressure cleaning is performed while rocking the high pressure cleaning nozzle along a direction of arrangement of the high pressure cleaning spots.