JPH09148420A - Electrostatic adsorption electrode and method of manufacturing the same - Google Patents

Abstract

(57) [PROBLEMS] To make it possible to accurately and easily manufacture an electrostatic attraction electrode corresponding to an increase in diameter of a wafer. A first electrode (11) is provided with a recess for fitting a second electrode (12), an insulating film (13) is formed in the recess, and the second electrode (12) is fitted and fixed in the recess to form the first and second electrodes. The second electrode surface is processed so as to be coplanar, and the electrostatic adsorption film 14 is formed thereon by thermal spraying. The electrostatic adsorption film 1 formed by thermal spraying is formed.
4 is ground to a predetermined thickness. Thereby, it is possible to easily deal with the large diameter wafer 9.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic attraction electrode and a method for manufacturing the same, and more particularly to a semiconductor substrate such as a wafer (hereinafter referred to as a semiconductor substrate).
The present invention relates to an electrostatic adsorption electrode suitable for holding a substrate on a sample stage by utilizing electrostatic force when performing vacuum treatment, plasma treatment, heat treatment, or the like on a “substrate” and a manufacturing method.

[0002]

2. Description of the Related Art Conventionally, as an electrostatic attraction electrode used in a substrate processing apparatus, a so-called circuit having a structure in which a negative high voltage is applied to an electrode for attracting a substrate and the substrate is grounded via a plasma to a so-called The type called a monopole electrode was the mainstream. For example, Japanese Patent Laid-Open No. 6-216224
The electrostatic chuck described in Japanese Patent Laid-Open Publication No. 2003-242242 is exemplified. The monopole electrode has the advantage that the electrostatic attraction circuit is simple and that the applied electrostatic attraction potential is constant on the substrate. On the other hand, there is a disadvantage that the adsorption charge removal operation cannot be performed unless plasma is generated. In addition, JP-A-6-216
In the electrostatic chuck described in Japanese Unexamined Patent Publication No. 224, a ceramic plate serving as an electrostatic adsorption material is bonded to the electrode block by low temperature brazing. If the electrostatic chucking ceramic is too thick, it will not generate a chucking force, so it must be finished to a predetermined thickness. The electrostatic chuck employs a method in which ceramic is adhered to an electrode block and then ground to a predetermined thickness. Further, as an electrostatic attraction electrode using a monopole electrode, for example, an electrostatic chuck described in JP-A-6-275708 can be cited. The electrostatic chuck described in this publication is manufactured by a method of adhering an electrostatic adsorption film on a susceptor (block) made of a metal such as aluminum via an insulating film. In this method, the electrostatic adsorption film is made of, for example, SiC whose resistivity is within a specific range. In addition, the portion corresponding to the wafer suction surface is manufactured as an integral body.

An electrostatic chuck used in the plasma processing apparatus disclosed in Japanese Patent Application Laid-Open No. 6-260449 is considered as a similar one.

An electrode of the so-called dipole electrode has positive and negative electrodes on the surface of the substrate to be electrostatically adsorbed, and has an advantage that it can be adsorbed and slowly charged regardless of the presence or absence of plasma. An electrostatic chuck electrode using a dipole electrode is, for example, an electrostatic chuck described in US Pat. No. 5,055,964. The electrostatic chuck described in this publication is of a type in which the other electrode is provided inside the electrode. It is formed by joining a first electrode having a tapered recess and a second electrode housed in the recess, and both the first electrode and the second electrode are manufactured from a single conductor block. After joining the first and second electrodes, the top surface of the assembled chuck is machined to provide final dimensions, smoothness, and flatness. An insulating material is formed on the chuck top surface by a method such as anodizing.

[0005]

In the electrostatic chuck, when the wafer becomes large, that is, from 6 inches to 8 inches, and further to 12 inches, the thermal expansion of the electrostatic adsorption film and the electrode block depends on the electrode temperature. The difference is a problem, and it is difficult to manufacture a large electrostatic adsorption film. For example, when handling the ceramic plate described in JP-A-6-216224, a certain thickness, that is,
If there is no strength, there is a problem that handling such as adhesion becomes difficult. Also, when forming the electrostatic adsorption film by thermal spraying,
Although it is considered that the above problems are few, it is difficult to control the physical properties such as the dielectric constant and electric resistance required for electrostatic adsorption because the sprayed film has a lower withstand voltage than the sintered material. There is a problem that it is more difficult than binding material. Furthermore, the thickness of the electrostatic adsorption film does not change even if the diameter of the wafer increases, and it is very difficult to handle because it must be a thin electrostatic adsorption film. It becomes difficult to manufacture the electrostatic adsorption film. That is, since the thickness is smaller than the size of the sintered body that becomes the electrostatic adsorption film,
Cracking occurs due to slight thermal strain, and handling becomes difficult in terms of strength.

A first object of the present invention is to provide an electrostatic attraction electrode which can solve these problems and can easily cope with a large-diameter wafer, and a manufacturing method thereof. A second object of the present invention is to provide an electrostatic attraction electrode and a method for producing the electrostatic attraction electrode, which can be used for a large-diameter wafer, can accurately and easily manufacture the electrode size, and can easily manage the insulating film on the electrode. To provide.

[0007]

SUMMARY OF THE INVENTION A first object of the present invention is to:
The electrode is separated into a first electrode and a second electrode, a recess is provided in a part of the first electrode, an insulating film is formed in the recess, and the second electrode is inserted and fixed, and the surfaces of both electrodes Is processed flat,
This is achieved by forming an insulating film for electrostatic adsorption on it by thermal spraying and finally processing it to a predetermined film thickness.

A second object of the present invention is to dispose an electrostatic adsorption sintered body, which is an electrostatic adsorption member, on an electrode block in a divided manner, and to bond the electrostatic adsorption member to the electrode block by mechanical or mechanical bonding. By spraying a film of an insulating material on the electrode block to which the electrostatic adsorption member is fixed, and polishing the upper surface of the electrode block on which the insulating material film is formed to expose the surface of the electrostatic adsorption member. Is achieved.

[0009]

BEST MODE FOR CARRYING OUT THE INVENTION A recess is provided in a part of a first electrode. An insulating film is formed in the recess and the second electrode is inserted and fixed. As a result, the surfaces of both the first and second electrodes can be machined, so that the surfaces of the electrodes can be machined flat and the electrodes can be easily manufactured. Moreover, since it can be manufactured with high precision, the film thickness of the electrostatic adsorption insulating film can be made highly accurate by forming the electrostatic adsorption insulating film on the surfaces of both electrodes after processing by spraying. It becomes possible to easily manage the characteristics. As a result, the difficulty of manufacturing due to the increase in the diameter of the wafer in the electrostatic attraction film of the one body is solved. Further, by using a sintered body having relatively stable physical properties as the electrostatic attraction member, insufficient withstand voltage can be eliminated. Further, it is composed of a plurality of small sintered plate members. This is placed on the electrode block so as to become the electrostatic attraction surface, and is bonded by brazing or the like.
Next, an insulating material such as alumina having a high withstand voltage is formed on the electrode block to which the sintered body is fixed by thermal spraying. Then, polishing is performed until the sintered body is exposed and has a predetermined thickness. Since the electrostatic attraction electrode is manufactured in this manner, the electrostatic attraction surface can be formed of a sintered body, and the other portions can be formed of a sprayed film having a high withstand voltage. As a result, the electrostatic adsorption characteristics can be determined by the physical properties of the sintered body, and the electrostatic adsorption surface can be formed by combining the sintered bodies of small members. The difficulty of manufacturing due to the caliber is solved.

An embodiment of the present invention will be described below with reference to FIGS.
This will be described with reference to FIG. FIG. 1 shows an example of a substrate processing apparatus using an electrostatic attraction electrode according to an embodiment of the present invention. Examples of the substrate processing apparatus include a plasma processing apparatus using plasma such as an etching apparatus and a film forming apparatus, and a vacuum processing apparatus such as an ion implantation apparatus. In this case, a plasma processing apparatus will be described as an example. A gas supply device 2 and a vacuum exhaust device 3 are connected to a vacuum container 1 in which a plasma 5 is generated, and a plasma generation device 4 is provided. In the vacuum chamber 1, a sample stage on which a sample to be processed by the plasma 5, for example, a substrate 9 such as a semiconductor element substrate such as a wafer or a liquid crystal substrate, is provided.
The sample table is configured using the electrostatic attraction electrode 10.

In this case, the electrostatic adsorption electrode 10 is the electrode 1.
1, an electrode 12, an insulating film 13 and an insulating film 14.
The electrode 11 has a coolant passage 21 formed therein and a ring-shaped recess formed on the upper surface. The electrode 12 is formed in a ring shape. The electrodes 11 and 12 are made of a conductive material such as an aluminum alloy. The electrode 12 is fitted and fixed in the recess of the upper surface of the electrode 11 with the insulating film 13 interposed therebetween. The insulating film 13 is located between the electrode 11 and the electrode 12, and insulates both from each other. Electrode 11 and electrode 12
An insulating film 14 for electrostatic attraction is formed on the surface of the. A lead wire 18 for applying a voltage is connected to the electrode 11. A lead wire 19 for voltage application is connected to the electrode 12. The lead wire 19 is connected through a through hole formed by an insulating tube 15 provided on the electrode 11. The lead wire 19 and the electrode 11 are electrically insulated by the insulating tube 7. The leads 18 and 19 are the electrostatic attraction power source 8
Connected to. Since the electrodes 11 and 12 are electrically insulated from each other, it is possible to electrostatically adsorb the substrate 9 on the upper surfaces of the electrodes 11 and 12 by applying positive and negative voltages by the electrostatic adsorption power supply 8. . The lead wire 19 is connected to the electrode 12 by forming a female screw on the electrode 12 and forming a male screw on the tip of the lead wire 19, although not shown.
The electrode 12 and the lead wire 19 can be easily bolted together. This also applies to the connection between the electrode 11 and the lead wire 18.

Further, a through hole 20 in which an insulating tube is installed is provided at the center of the electrode 11. The through hole 20 is used when introducing the heat transfer gas to the back surface of the electrostatically adsorbed wafer. In this case, the insulating film 14 for electrostatic attraction is formed by thermal spraying, and is finally polished to be processed into a flat and predetermined thickness state. If the insulating film 14 formed by thermal spraying is used, the surface of the electrode is machined in advance to form depressions (not shown).
By forming the electrode 11, the electrode 11 after the formation of the insulating film 14 is formed.
Alternatively, the groove can be easily formed on the surface of the electrode 12. This facilitates electrode design in which gas dispersion grooves are provided on the electrode surface. The gas distribution groove on the electrode surface adjusts the heat transfer characteristics to supply the heat transfer gas (for example, helium gas) to the back surface of the substrate for controlling the temperature of the substrate to be processed and to make the substrate temperature distribution uniform. It is provided to do.

The electrostatic attraction electrode 10 is attached to the lower surface of the vacuum container 1 by a ground plate 24. The electrode 11 is attached to the ground plate 24 via the insulating plate 23. Each connection part is sealed so that the heat transfer gas does not leak to the through hole 20 for gas supply provided in the center, and the electrode 11, the insulating plate 23 and the ground plate 24 are fixed by tightening with bolts (not shown). ing. A cover 22 is installed around the outside of the electrode 11. The cover 22 is smoothly inclined toward the outer peripheral portion. Therefore, there is no shaded part when the ions in the plasma are irradiated from above.
Therefore, even if a reaction product generated when performing a process such as plasma etching accumulates on the cover 22, it can be easily removed by exposing the reaction product to plasma for cleaning. Therefore, foreign substances can be easily reduced.

Further, a bias power supply 7 is connected to the electrode 11 together with a power supply for electrostatic attraction. Bias power supply 7
Applies a high-frequency bias voltage to the electrode 11, but changes the diameters of the electrode 11, the insulating plate 23, and the ground plate 24 so that abnormal discharge does not occur between the electrode 11 and the ground plate 24. Both of the ground plates 24 are not directly visible. As a result, it is not necessary to provide another insulating member on the outer peripheral portion of the electrode 11, and the cover 22 also serves.

The temperature control of the substrate 16 shown in FIG. 1 is controlled by the temperature of the coolant flowing through the coolant passage 21 provided in the electrode 11. That is, the temperature of the electrode 11 is controlled by the temperature of the coolant, and the temperature of the substrate 9 is controlled via the insulating film 14 and the heat transfer gas. In this case, the coolant channel 21 is provided only in the electrode 11,
The temperature of the electrode 12 is also controlled by heat conduction through the insulating film 13. Therefore, the refrigerant need not be supplied to the electrode 12. Thereby, it is sufficient to provide the coolant channel 21 to the electrode 11, and the mechanism can be simplified. In this embodiment, the substrate transfer mechanism and the like are omitted.

A method of manufacturing the electrostatic attraction electrode having the above structure will be described below. First, the electrode 11 shown in FIG. 2 is manufactured. The electrode 11 is previously provided with a recess for fitting the electrode 12, that is, a recess. An insulating film 13 is formed in the depression. In this case, the insulating film 13 is formed by thermal spraying, and is a 100% alumina thermal sprayed film having excellent insulating properties in order to electrically insulate the electrodes 11 and 12 from each other. FIG. 3 is a three-dimensional view of FIG. Insulating film 1
A hole connected to the through hole of the insulating pipe 15 is provided in a part of 3. A through hole 20 is provided in the center of the electrode 11 to form a heat transfer gas supply hole.

Although the insulating film 13 shown in FIGS. 2 and 3 has been shown as an example in which it is formed by thermal spraying, another method for forming an insulating film may be as follows. The insulating film located on the opposing surface of the electrodes 11 and 12 is replaced with an insulating material such as alumina. An example is shown in FIG. The lower surface portion is the insulating plate 131, the outer side surface is the insulating ring 132, and the inner side surface is the insulating ring 133 to ensure electrical insulation between the electrodes 11 and 12. The insulating plate 131 is provided with holes 16 corresponding to the insulating tubes 15 for passing the lead wires 19. The insulating plate 131 and the insulating rings 132 and 133 may be composed of separate parts as shown in FIG. 4, or may be integrally manufactured as shown in FIG. FIG. 6 shows an electrode 12 fitted into the recess of the electrode 11 shown in FIG. The ring-shaped electrode 12 is used when the insulating film and the insulating material shown in FIGS. Although the electrode 11 is provided with the insulating film 13 in FIGS. 2 and 3, the electrode 12 may be provided with an insulating film. FIG. 7 shows an example in which an insulating film 135 is provided on the electrode 12 side. The insulating film 135 is provided by thermal spraying on the bottom surface and both side surfaces of the electrode 12.

Next, FIG. 8 shows a state in which the electrodes 11 and 12 are fitted together. Aside from the case where the film thickness of the insulating film 13 is manufactured on the order of microns, the upper surfaces of the electrode 11 and the electrode 12 manufactured with normal processing accuracy are not always in the same plane. By processing up to the polishing surface indicated by the alternate long and short dash line in FIG. 8, the upper surfaces of the electrode 11 and the electrode 12 are flattened in the same plane. Next, as shown in FIG. 9, an insulating film for electrostatic adsorption is formed on the polished surface by thermal spraying. Finally, final polishing is performed so that the insulating film for adsorption has a predetermined thickness to complete.

As described above, according to this embodiment, by polishing the electrode surface, the upper surface of each electrode is flattened in the same plane, and the insulating film is formed on the flattened electrode surface. Since thermal spraying is performed and the insulating film is finally polished to a predetermined thickness,
The size of the electrode can be accurately and easily manufactured, and the insulating film on the electrode can be easily managed. This allows
A large-diameter electrode can be easily manufactured with high precision.
Since a highly accurate electrostatic attraction electrode can be easily manufactured, there is an effect that the electrostatic attraction property becomes stable. Further, since each part can be manufactured by machining, there is an effect that the manufacturing cost can be reduced. Furthermore, since a bolt fastening method can be used as a method of connecting the lead wire to the electrode, there is an effect that it is reliable and excellent in assembling. Further, since the shape of the electrode surface can be easily manufactured by machining, there is also an effect that the flow path of the substrate backside gas (helium gas) for designing the substrate temperature can be freely designed. Furthermore, since the substrate adsorption surface is polished and cooling gas can be supplied to the back surface of the substrate, the temperature of the electrode adsorption surface can be uniformly controlled by the electrodes whose temperature is controlled by the refrigerant, and the substrate temperature control can be performed. Can be easy.

A second embodiment of the present invention is shown in FIGS.
5 will be described. In the second embodiment, another method for forming an insulating film for electrostatic attraction will be described. FIG. 10 shows an electrostatic attraction electrode manufactured according to this example. The electrode block 100 includes the electrode 11 and the electrode 12 in the above-described embodiment.
Consists of On the upper surface of the electrode block 100, a plurality of electrostatic adsorption sintered bodies 101a and 101b and a sprayed film 103 are provided. In this case, the plurality of electrostatic adsorption sintered bodies 101a and 101b are
The electrostatic attraction and sintering body 101b, which is doubly arranged inside and outside, is provided with a through hole 20a for supplying heat transfer gas. The upper surfaces of the electrostatic adsorption sintered bodies 101a, 101b and the sprayed film 103 are finally polished and the substrate is held on the polishing surface 104. That is, in the case of the electrostatic attraction electrode of the dipole system, the electrodes 11 and 12 for applying positive and negative voltages are combined with each other through the insulating film 13, and the sintered bodies 101a and 101b are arranged corresponding to the respective electrodes. Spray from above. Thereby, the electrostatic attraction electrode can be manufactured by the same manufacturing method as that of the monopole.

A method of manufacturing the electrostatic attraction electrode of this embodiment will be described below. First, FIG. 11 shows a first step of manufacturing the electrostatic attraction electrode. On the upper surface of the electrode block 100 made of aluminum or aluminum alloy, an electrostatic adsorption sintered body 101a made of a material having an electric resistance of about 10 10 to 10 11 Ωcm such as a sintered material obtained by mixing titania with alumina or silicon carbide (SiC), Place b. The electrostatic adsorption sintered body is usually manufactured by covering a surface of the electrode with a single plate material, but in this embodiment, it is divided into small sintered bodies 101a and 101b, and the sintered bodies 101a and 101b are manufactured. The electrode block 10
Place it in place on the 0 surface. Electrode block 100
As shown in FIG. 12, the sintered bodies 101a and 101b are adhered to each other via adhesives 102a and 102b. For the adhesion, for example, an epoxy adhesive used at high temperature may be used, or low temperature brazing may be used. In this way, the sintered bodies 101a and 101b are fixed to the upper surface of the electrode block 100. Thereafter, as shown in FIG. 12, a sprayed film 103 is formed on the electrode block 100 and the sintered bodies 101a and 101b.
The material of the sprayed film is, for example, alumina. Sprayed film 10
In part 3, there is no need to perform electrostatic attraction. Therefore, alumina having excellent insulation resistance can be used. That is, when a sprayed film is formed as an electrostatic adsorption material, a resistance value of about 1010 to 1011 Ωcm is required, whereas it is used as a simple insulating film, so the resistance value of alumina material is set to a high value of 1014 Ωcm or more. be able to. This makes it possible to obtain a film having excellent voltage resistance.

Next, the surface is polished up to the polishing surface 104 shown in FIG. As a result, the sintered bodies 101a and 101b appear on the surface as shown in FIG. The electrostatic attraction electrode after polishing is shown in FIG. The portions of the sintered bodies 101a and 101b appearing on the surface come into contact with the substrate to perform electrostatic attraction. At this time,
Part of the sprayed film 103 also contacts the substrate, but the resistance value of the sprayed film 103 is high and almost no adsorption force is generated. Therefore, the substantial electrostatic attraction is due to the sintered body 101 appearing on the surface.
It is generated by a and b.

This manufacturing method has the following advantages. (1) Since the dimensions of the sintered bodies 101a and 101b are small, the sintered body can be easily manufactured. (2) Similarly, even if the temperature of the electrode changes, the electrode block 1
00 and the sintered bodies 101a, 101b have a small difference in thermal expansion, and have excellent temperature resistance characteristics with respect to mechanical properties. (3) Even if the substrate 9 becomes large, it can be dealt with by appropriately adjusting the size or the number of the sintered bodies 101a and 101b. (4) In most cases, the electrostatically attracted body made of a sintered body has a finally required thickness of 0.1 mm or less. For this reason, it is necessary to grind it after adhering it to the electrode, but since the sintered body is manufactured with a small block, thin manufacturing is possible, and the grinding allowance after adhering can be reduced.

The surface of the electrode block 100 where the sintered compacts 101a, 101b are arranged is processed to be slightly lower and recessed, and the sintered compacts 101a, 101b are bonded to the lowered surfaces. In this way, both the sintered bodies 101a and 101b and the sprayed film 103 are easily polished even if the polishing thickness is small. This method can also be applied as a manufacturing method when the thickness of the sintered bodies 101a and 101b is desired to be changed in each part of the electrode block 100. Furthermore, there is an advantage that the sintered bodies 101a and 101b can be easily positioned.

The electrostatic adsorption electrode shown in FIG. 10 has a structure corresponding to the temperature control of the substrate using the heat transfer gas supplied to the back surface of the substrate. When a heat transfer gas is used, it is necessary to prevent gas leakage from the outer peripheral portion of the substrate, and flatness is required for the electrode surface. When the polishing surface 5 shown in FIG. 12 is polished, the surfaces of the sintered bodies 101a and 101b appear on the same plane as the sprayed film 103 as shown in FIG. As a result, the substrate 9
The heat transfer gas is sealed at the outer peripheral portion of the sprayed film 103b.
And the flat portion of the sintered body 101a connected thereto. The sprayed film 103c is a part which is sprayed on the surface which is depressed one step lower and is not polished. The heat transfer gas such as helium supplied from the heat transfer gas supply hole provided on the center side of the electrode is quickly supplied to the back surface of the substrate through the sprayed film 103c. This sprayed film 103c portion does not need to be processed in particular, and simply by arranging the positions of the sintered bodies 101a and 101b so that the substrate temperature distribution is made uniform, the heat transfer gas covered with the sprayed film 103c can be formed. Dispersion grooves are formed.

The sintered body 101a shown in FIG.
Although b has a vertical cross section, it is difficult to form a thermal spray coating on such a vertical surface. Therefore, the sintered bodies 101a and 101b
The cross section of is a surface inclined at about 45 degrees. By doing so, the sprayed film can be formed more reliably. FIG.
4 shows an electrostatic attraction electrode in which the cross sections of the sintered bodies 101c and 101d are inclined. The electrode block is in this case a single electrode 11
a. The electrode 11a has a power supply 8 for electrostatic attraction.
Is connected. In this case, the through hole 20 for supplying the heat transfer gas
Is provided at the center of the electrode 11a. The electrode 11a is the substrate 9
Corresponding to, a ring-shaped convex portion is provided on the outer peripheral portion of the substrate 9. The side surface of the convex portion is an inclined surface. Sintered bodies 101c and 101d are arranged and fixed in a double ring shape with adhesives 102c and 102d on the upper surface of the electrode 11a inside the convex portion. A sprayed film is formed on the upper surfaces of the electrode 11a and the sintered bodies 101c, d, and the upper surfaces including the sprayed film are polished so that the sintered bodies 101c, d have a predetermined thickness level.
As a result, the sprayed film 103b formed on the ring-shaped convex portion of the electrode 11a is at the same level as the upper surface of the sintered body 101c. The portions of the sprayed films 103a, 103e, 103c, 103d are lower than the mounting surface of the substrate 9 and a groove is formed. Similarly, a groove portion of the sprayed film is formed between the sintered bodies 101c and 101d arranged in a ring shape. As a result, the through hole 20 and the sprayed film 103b communicate with each other through a groove formed by the sprayed film. On the back surface of the substrate 9, the heat transfer gas is uniformly dispersed through the grooves formed by the sprayed film.

Further, in the electrostatic attraction electrode shown in FIG. 13,
The heat transfer gas is sealed on the outer peripheral portion of the substrate by the sprayed film 103.
It was performed in the flat part consisting of b and the sintered body 101a. On the other hand, in the electrostatic attraction electrode shown in FIG. 14, the heat transfer gas is sealed only by the flat portion covered with the sprayed film 103b on the outer peripheral portion of the substrate. By doing so, the width of the ring-shaped convex portion of the electrode 11a can be arbitrarily set, and the dimension of the heat transfer gas seal portion can be freely determined. Further, in the example shown in FIG. 14, the electrode block is of a monopole type, but the electrode 12 may be provided below the sintered body 101c as shown in FIG.

As described above, according to the present embodiment, since the electrostatic adsorption film can be formed by the small piece of the sintered member, the manufacturing problem associated with the increase in the diameter of the substrate, for example, the wafer can be solved, and the cost can be reduced. . Further, since each sintered member is small, it is possible to easily control the dimensions thereof and to manufacture a thin sintered body.
As a result, the handling of the sintered body is easier than that of the integral sintered body having substantially the same diameter as the wafer, and there is a marked difference. Also in this respect, the manufacturing cost can be reduced. Further, according to the present embodiment, since the wafer size is basically not selected, there is a feature that it can be easily applied to a deformed substrate or the like. For example, the electrostatic attraction electrode can be manufactured without any problem even on a large-area rectangular substrate such as a liquid crystal substrate. In addition, when the electrostatic attraction electrode is used at low temperature or high temperature, a difference in thermal expansion occurs due to the difference in material between the electrostatic attraction section and the electrode block, which may cause cracking or peeling of the electrostatic attraction member. Since the phenomenon can be prevented, there is an effect that the reliability of the electrode is improved. That is, since the sintered member is made small, the amount of deformation due to thermal expansion is small and cracking or peeling does not occur. Further, an adhesive or a brazing material is used when adhering the sintered body to the electrode made of an aluminum alloy. In this embodiment, however, since the coating is performed by thermal spraying on the adhered sintered body, the adhesive or brazing material is used. It is possible to prevent problems such as the material leaking to the outside during wafer processing to cause metal contamination. Further, since a dielectric made of a sintered member is used for electrostatic adsorption, the electrostatic adsorption ensures the adsorption characteristic based on the physical property value determined by the sintered member. Therefore, a sprayed film of alumina or the like may be used merely for electrical insulation, and can have a higher withstand voltage than a mixed material of alumina and titania applied as an electrostatic adsorption material. Therefore, the electrical insulation characteristics of the electrodes can be improved.

Next, another embodiment using the present invention is shown in FIG.
21 to 21. FIG. 16 shows an example applied to a transfer arm that transfers a substrate. FIG. 16 and FIG.
As shown in FIG. 7, a support portion for pointing the substrate 9 is provided at the tip of the transfer arm 201. The support block 21 supports the back surface of the substrate 9 at three points.
0, 220 are provided. The details of the support block 220 are shown in FIG. The same applies to the support block 210. The support block 220 is provided on the upper surface of the transfer arm 201.
In this case, a concave portion is provided at the position where is provided. An electrode 222 is provided in the recess via an insulating film 221. A state where the electrodes 222 are attached is shown in FIG. 18, and is located at three positions on the upper surface of the arm 201. In this state, the polishing surface 104 is polished, and the upper surfaces of the three electrodes are aligned.
An insulating film 223 is formed on the upper surface of the leveled electrode 222, as shown in FIG. A through hole is formed below the electrode 222 of the transfer arm 201, and
Is attached. The electrode 2 through the hole in the insulating tube 202
A lead wire 203 is connected to 22. The lead wire 203 connected to each of the three electrodes is connected to an electrostatic attraction power supply (not shown).

With this structure, 300 m
A substrate having a diameter of m or more can be surely held. As a result, even if the substrate transfer speed by the transfer arm is increased, the substrate does not shift or drop from the arm,
It is possible to carry out reliable transport. Further, since the transport speed can be increased, throughput can be improved.

FIG. 20 shows another embodiment of the support block 220, which is an example using a sintered body. Transport arm 2
An electrode 225 is provided on the upper surface of 01 through an insulating plate 224. Further, a sintered body 227 is attached to the upper surface of the electrode 225 using an adhesive 226. The sintered body 227 is the transfer arm 2
01 are provided at a plurality of positions, and the polishing surface 104 is polished to the same level. With this configuration, the same effect as above is obtained, and according to the present example, it is finished only by combining up to the sintered body and then polishing, and the insulating film is formed after the processing as described above. The work of is unnecessary and the production can be facilitated.

The transfer arm manufactured as described above is arranged in a vacuum transfer chamber 200 as shown in FIG. 21, for example. Vacuum containers 1a, 1b, 1c and load / unload lock chambers 300 are installed around the outside of the vacuum transfer chamber 200, respectively. Each vacuum container 1a, 1
In the b and 1c, for example, the electrostatic attraction electrode 10 described above is used.
a, 10b, 10c are provided. The substrate supplied from the atmosphere side is introduced into the vacuum atmosphere through the load lock chamber, and is transported to a predetermined vacuum container by the transport arm 201. The substrate that has been processed in the vacuum container is transferred to the unload lock chamber by the transfer arm, and is taken out to the atmosphere side through the unload lock chamber. During this time, the substrate is electrostatically adsorbed, carried and vacuum processed, and processed while being surely supported. Therefore, it is possible to provide a device having high reliability and improved throughput.

[0033]

As described above, according to the present invention, there is an effect that the electrostatic adsorption supporting means can be easily manufactured for a large-diameter wafer.

[Brief description of the drawings]

FIG. 1 is a vertical cross-sectional view showing the configuration of a substrate processing apparatus using an electrostatic attraction electrode according to an embodiment of the present invention.

2 is a cross-sectional view showing a manufacturing process of the electrostatic attraction electrode of FIG. 1, showing a state of forming an insulating film on the electrode 1. FIG.

FIG. 3 is a perspective view showing the electrode of FIG.

4 is a perspective view showing another embodiment of an insulating film formed on the electrode of FIG.

5 is a perspective view showing still another embodiment of the insulating film formed on the electrode of FIG.

6 is a perspective view showing an electrode 2 of the electrostatic attraction electrode of FIG.

FIG. 7 is a perspective view showing another embodiment of the electrode 2 of FIG.

FIG. 8 is a view showing a manufacturing process of the electrostatic attraction electrode of FIG. 1, and is a vertical cross-sectional view showing an assembling stage of the electrodes 1 and 2;

9 is a view showing a manufacturing process of the electrostatic attraction electrode of FIG. 1, and is a vertical cross-sectional view showing a completion stage of the electrostatic attraction electrode.

FIG. 10 is a perspective view showing another embodiment of the electrostatic attraction electrode of FIG.

11 is a view showing a manufacturing process of the electrostatic attraction electrode of FIG. 10, and is a perspective view showing a step of disposing a sintered body on an electrode block.

12 is a view showing a manufacturing process of the electrostatic attraction electrode of FIG. 10, and is a cross-sectional view showing a spraying step on the electrode block after the sintered body is arranged.

FIG. 13 is a view showing a manufacturing process of the electrostatic adsorption electrode of FIG. 10, and is a vertical cross-sectional view showing a completion stage of the electrostatic adsorption electrode after polishing the sprayed film.

14 is a vertical cross-sectional view showing still another embodiment of the electrostatic attraction electrode of FIG.

15 is a plan view of the electrostatic attraction electrode of FIG.

FIG. 16 is a perspective view showing a structure of a substrate support portion of a substrate transfer device using an electrostatic attraction electrode according to another embodiment of the present invention.

FIG. 17 is a side view of FIG. 16;

FIG. 18 is a view showing a manufacturing process of the substrate supporting part of FIG. 16, and is a cross-sectional view showing an electrode disposing step.

FIG. 19 is a view showing a manufacturing process of the substrate supporting part of FIG. 16, and is a vertical sectional view showing a completion stage.

20 is a longitudinal sectional view showing another embodiment of the substrate supporting portion of FIG.

FIG. 21 is a plan sectional view showing an example of a processing apparatus using the electrostatic attraction electrode and the substrate transfer apparatus of the present invention.

[Explanation of symbols]

1, 1a, 1b, 1c ... Vacuum container, 2 ... Gas supply device,
3 ... Vacuum exhaust device, 4 ... Plasma generation device, 5 ... Plasma, 6 ... Heat transfer gas supply device, 7 ... Bias power supply, 8 ... Electrostatic adsorption power supply, 9 ... Substrate 10, 10, 10a, 10b, 10
c ... Electrostatic attraction electrode, 11, 11a ... Electrode, 12 ... Electrode,
13 ... Insulating film, 14 ... Adsorption insulating film, 15 ... Insulating tube, 1
6 ... Through hole, 17 ... Insulation pipe, 18 ... Lead wire, 19 ... Lead wire, 20, 20a ... Through hole, 21 ... Refrigerant flow path, 22
... cover, 23 ... insulating plate, 24 ... ground plate, 100 ... electrode block, 101a, 101b, 101c, 101d
... Sintered body, 102a, 102b, 102c, 102d ...
Adhesive, 103, 103a, 103b, 103c, 10
3d ... Sprayed film, 104 ... Polished surface, 131 ... Insulating plate, 13
2 ... Insulation ring, 133 ... Insulation ring, 134 ... Insulation plate, 135 ... Insulation film, 200 ... Vacuum container, 201 ... Transport arm, 202 ... Insulation tube, 203 ... Lead wire, 210 ...
Support block, 220 ... Support block, 221 ... Insulating film, 222 ... Electrode, 223 ... Insulating film, 224 ... Insulating plate,
225 ... Electrode, 226 ... Adhesive, 227 ... Sintered body, 30
0 ... Load and unload lock room.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Seiichiro Sugano 502 Kintate-cho, Tsuchiura-shi, Ibaraki Prefecture Hiritsu Manufacturing Co., Ltd. Mechanical Research Laboratory

Claims (19)

[Claims] 1. An electrostatic attraction electrode for applying a voltage to a first electrode and a second electrode to attract a substrate, wherein a recess for fitting the second electrode into the first electrode is provided, including the recess. An insulating film is formed on the surface of the first electrode, and the second electrode is fitted and fixed in the recess, and an insulating film is formed on the surfaces of both the fixed first electrode and the second electrode. An electrostatic attraction electrode characterized by being formed. 2. The electrostatic attraction electrode according to claim 1, wherein a hole is formed in the first electrode through a recess for fitting the second electrode into the back surface of the first electrode, and the insulating tube is provided in the hole. Or an insulating film is formed, and an insulating film is formed on the surface of the first electrode including the recess. 3. An electrostatic attraction electrode for applying a voltage to a first electrode and a second electrode to attract a substrate, wherein a recess for fitting the second electrode into the first electrode is provided and the first electrode is provided. An insulating film is formed on the surface of the recess facing the second electrode on the surface of the electrode, the second electrode is fitted and fixed in the recess of the first electrode, and the fixed first electrode is fixed. And an electrostatic adsorption film formed on the surfaces of both the second electrode and the second electrode. 4. The electrostatic adsorption electrode according to claim 3, wherein an insulating film on a surface of the first electrode facing the second electrode in the recess is formed of a high resistance material. Electrostatic adsorption electrode with a higher resistance value than. 5. The electrostatic attraction electrode according to claim 4, wherein the material of the insulating film on the facing surface is alumina, and the electrostatic attraction film is a mixed material of titania and alumina. 6. A method of manufacturing an electrostatic attraction electrode for applying a voltage to a first electrode and a second electrode to attract a substrate, wherein a recess for fitting the second electrode is provided in the first electrode, An insulating film is formed on the surface of the first electrode including the recess, and the second electrode is fitted and fixed in the recess, and both the fixed first electrode surface and the second electrode surface are substantially coplanar. A method for manufacturing an electrostatic attraction electrode, characterized in that after processing each of the material electrodes so as to become a conductor surface, an insulating film is formed on both electrode surfaces. 7. The method of manufacturing an electrostatic attraction electrode according to claim 6, wherein the insulating film is formed on both electrode surfaces of the first electrode and the second electrode by thermal spraying. 8. The method of manufacturing an electrostatic attraction electrode according to claim 7, wherein the material electrode surface on which the insulating film is sprayed is polished to a predetermined thickness. 9. A plurality of electrostatic attraction members are fixed to the upper surface of the electrode block through a joining member, and the upper surface of the electrode block is covered with an insulating material except the attraction surface of the electrostatic attraction member. Electrostatic adsorption electrode. 10. The electrostatic attraction electrode according to claim 9, wherein the insulating material is a sprayed film. 11. An electrostatic attraction electrode in which the sprayed film according to claim 10 is made of alumina. 12. An electrostatic adsorption electrode for electrostatically holding a wafer in a plasma processing chamber, wherein a plurality of electrostatic adsorption sintered bodies are dividedly arranged within the wafer arrangement range on the upper surface of a sample table made of a conductive material, An electrostatic adsorption electrode characterized in that the upper surface of the sample table other than the electrostatic adsorption sintered body is covered with a sprayed film. 13. The electrostatic adsorption electrode according to claim 12, wherein the sprayed film is formed at least corresponding to an outer peripheral portion of the wafer, and the electrostatically adsorbed sintered body is disposed inside the sprayed film. An electrostatic attraction electrode in which the sprayed film and the sintered body are on the same surface level. 14. A plurality of materials serving as electrostatic attraction members are divided and arranged on an electrode block, and the electrostatic attraction members are bonded or mechanically fixed on the electrode block. An electrostatic attraction electrode, characterized in that a film of an insulating material is formed on a fixed electrode block by thermal spraying, and an upper surface of the electrode block on which the insulating material film is formed is polished to expose the surface of the electrostatic attraction member. How to make. 15. A method of manufacturing an electrostatic attraction electrode, wherein the sprayed coating according to claim 14 is alumina. 16. A second electrode is provided in a recess provided in the first electrode via an insulating material, and the upper surfaces of the first electrode and the second electrode are processed to have the same level, and the upper surface is processed. An electrostatic adsorption electrode, characterized in that it is formed by spraying an insulating film on. 17. A recess is provided in the first electrode, the second electrode is fixed to the recess through an insulating material, and the upper surfaces of the first electrode and the second electrode are processed to the same level. And forming an insulating film on the upper surface by thermal spraying. 18. A plurality of sintered bodies are fixed to the upper surface of the electrode processed to the same level, an insulating film is sprayed on the upper surface of the electrode provided with the sintered body, and the sintered body has a predetermined thickness. The electrostatic attraction electrode is characterized in that it is processed to the same level as the insulating film until the above. 19. A plurality of sintered bodies are fixed on the upper surface of an electrode processed to the same level, an insulating film is sprayed on the upper surface of the electrode on which the sintered body is provided, and the sintered body has a predetermined film thickness. The method for manufacturing an electrostatic attraction electrode is characterized in that the upper surface is processed to the same level as the insulating film until the above condition is satisfied.