JPH09134883A - Equipment for continuously manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make an equipment for continuously manufacturing semiconductor device compact by improving a gas gate and, at the same time, to improve the productivity of the equipment by securing a suitable pressure for film formation by preventing the mixing of gases with each other and the diffusion of the gasses to adjacent, film forming chambers. SOLUTION: An equipment for continuously manufacturing semiconductor device continuously manufactures semiconductor devices on a belt-like substrate 101 by continuously carrying the substrate 101 in the length direction through a plurality of film forming chambers which are set at different film forming pressures and connected to each other through gas gates having slit-like separating passages. The internal surfaces of the openings of the gas gates connecting the film forming chambers to each other are formed so that the cross sections of the openings can become smaller as going toward the exits of the gates from the entrance sides in steps or continuously in the carrying direction of the substrate 101, namely, the length direction of the substrate 101. At the same time, the blowing ports of a separation gas made to flow to the gas gates are provided on the film forming chamber set at the highest film forming pressure.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for continuously manufacturing large-area semiconductor elements, and more particularly to an apparatus for continuously forming laminated thin film elements such as photovoltaic elements on a strip substrate.

[0002]

2. Description of the Related Art Conventionally, as a method of continuously forming semiconductor elements used for photovoltaic elements etc. on a substrate, an independent film forming chamber for forming layers of each semiconductor element is provided, and the film forming chamber is provided in the film forming chamber. There has been proposed a method of forming each semiconductor layer.
For example, in U.S. Pat. No. 4,400,409,
Continuous plasma CV adopting roll-to-roll system
Method D is disclosed. According to this method, a plurality of glow discharge regions are provided, and a strip-shaped substrate having a desired width and sufficiently long is arranged along a path through which the substrate sequentially passes through the glow discharge regions, and the glow discharge regions are required in the glow discharge regions. It is disclosed that an element having a conductive type semiconductor junction can be continuously formed. In addition, JP-A-5-102
Japanese Patent No. 049 discloses an improved gas gate in the manufacture of a semiconductor device by a roll-to-roll method. In this publication, the slit height in a slit-shaped separation passage is continuously or discontinuously changed to control the gas flow in the separation passage to prevent gas mixture and diffusion in adjacent film forming chambers. It is disclosed to prevent.

[0003]

However, although the publication discloses that the width of the slit of the gas gate containing the dopant is narrowed so that the dopant does not diffuse into the adjacent chamber, it will be described below. There is no disclosure regarding the problems relating to the production of the semiconductor element by the roll-to-roll method, that is, the problems such as the further cost reduction and the improvement of the characteristics. That is, further reduction in cost, improvement in characteristics, and the like are desired in the production of semiconductor elements by the roll-to-roll method, particularly in the production of amorphous silicon solar cells. The layer structure of an amorphous silicon solar cell uses Si / Si to efficiently convert a wide spectrum of sunlight into electricity.
A Ge / SiGe triple cell has been proposed. When making a semiconductor element consisting of such multiple layers, if the performance of each gas gate is not satisfied and the gas gate is not made compact, the device will become very long, and the cost will increase due to the enlargement of the device. Become.

When an alloy such as SiGe is used in a device for improving the characteristics, a microwave CVD method having a high frequency is suitable in terms of productivity and characteristics. When the CVD methods having different frequencies such as high frequency and microwave discharge are combined, the pressure suitable for the discharge also greatly differs. In this case, when these two chambers are connected by a gas gate, the gas flows out from the higher pressure side to the lower pressure side, the film forming gases are mixed, and in a severe case, a desired pressure cannot be maintained. In order to solve this problem, it is sufficient to lengthen the gas gate, but this makes the device large, and it is necessary to devise a device for making it compact. In addition, as a result of continuing studies to improve the characteristics, it was revealed that the appropriate substrate temperature of each layer is different. In particular, when the p-layer is formed after the i-layer is formed, it is necessary to make the temperature of the i-layer extremely low as an appropriate temperature condition.

On the other hand, it is also necessary to increase the substrate transfer speed in order to reduce the cost. In this case, when moving from the discharge box with high substrate temperature to the discharge box with low substrate temperature,
It has also become necessary to reduce the temperature sufficiently while passing through a short gas gate. Further, in order to increase the production amount (cost reduction), it has been studied to further widen the width of the substrate. When each of the discharge boxes is heated and has a temperature gradient, the substrate is locally thermally expanded to cause bending. As a result, when the bent substrate passes through the gas gate, it comes into contact with the wall in the narrow gas gate, causing a problem that the surface of the substrate is scratched.
When such a wide substrate is used, and when it comes into the gas gate while the transport speed is high and the temperature is high, this scratch is a big problem.In the conventional gas gate, the slit height can be widened and the gas gate length can be extended. I could not respond. Therefore, the present invention solves the above-mentioned problems in the prior art, aims at downsizing the apparatus by improving the gas gate, prevents the gas from diffusing into the film forming chambers at different temperatures, and secures a pressure suitable for film forming. Thus, a continuous manufacturing apparatus for semiconductor devices with high productivity is provided.

[0006]

In order to solve the above-mentioned problems, the present invention has different film forming pressures connected by a gas gate having slit-shaped separation passages while continuously transporting a strip-shaped substrate in its longitudinal direction. In a continuous semiconductor device manufacturing apparatus for continuously forming semiconductor elements on the belt-shaped substrate by passing through a plurality of film-forming chambers, an opening surface of a gas gate that connects the film-forming chambers having different film-forming pressures is formed into the belt-like shape. The gas gate inlet side is formed so that the gas gate inlet side is large and the gas outlet side is small with respect to the longitudinal direction in which the substrate moves. It is characterized by being provided in. In the present invention, the gas gate includes a cooling mechanism, and the cooling mechanism cools the gas gate and the strip-shaped substrate by bringing a cooling means provided inside the gas gate into contact with the back surface of the strip-shaped substrate. Can be configured to.

[0007]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention, as described above,
In an apparatus for continuously manufacturing semiconductor devices by a two-roll method, an opening surface of a gas gate that connects film forming chambers with different film forming pressures is stepwise or continuously in the longitudinal direction in which the strip substrate moves. By forming it so that the inlet side is large and the outlet side is small, it is possible to prevent the substrate surface from coming into contact with the narrow inner wall of the gas gate when passing through the gas gate due to the waviness and warpage of the belt-shaped substrate caused by heating. Semiconductor elements can be deposited on the surface of the substrate without scratching. Further, by providing the outlet of the separation gas flowing to the gas gate near the film forming chamber where the film forming pressure is high, it is possible to prevent the film forming gas from mixing and diffusing between the adjacent film forming chambers.

The present invention will be described below with reference to the drawings.
FIG. 3 shows a continuous manufacturing apparatus for semiconductor devices according to the present invention.
It is a schematic diagram which shows an example. In the figure, 302 and 304 are film forming chambers by a high frequency plasma CVD method, 303 is a film forming chamber by a microwave plasma CVD method, and 301 and 305 are supply chambers and winding chambers for a strip-shaped substrate. The film forming chambers are connected by a gas gate 306. 3
Reference numeral 07 denotes a belt-shaped substrate, which passes through the three film forming chambers until the film is conveyed from the supply chamber to the winding chamber, and the surface of the substrate 3
A functionally deposited film of layers, for example a PIN-structured semiconductor film for solar cells, is formed. In each of the film forming chambers 302 to 304, a heater 309 for heating the substrate and a gas introducing pipe 3 for introducing a film forming gas supplied from a gas supply means (not shown) into the film forming chamber
10, an exhaust pipe 311 for exhausting the film forming chamber by an exhaust means (not shown), a microwave waveguide 313 for supplying microwave power to the film forming gas in the film forming chamber to generate electric discharge, and a high frequency is applied. A cathode 312 is provided to perform film deposition by the plasma CVD method.

The separation gas is introduced into the gas gate 306 from the separation gas introduction pipe 314, and the strip-shaped substrate supply chamber 30
1 between the film-forming chamber 302 and the film-forming chamber 304 between the film-forming chamber 304 and the strip-shaped substrate winding chamber 305, the slit height in the slit-shaped separation passage is centered on the separation gas inlet with respect to the longitudinal direction of the strip-shaped substrate. Both chambers are set to the same and microwave deposition chamber 3 is used.
Regarding the gas gates 306 located on both sides of 03,
The slit height in the slit-shaped separation passage is set so that the gas gate inlet side of the strip-shaped substrate is larger than the gas gate outlet side around the gas gate 306 with respect to the longitudinal direction of the strip-shaped substrate, and the separation gas inlet is formed in the film formation chamber. High pressure of 30
It is provided on the side of 2, 304 to prevent the film forming gas from admixing and diffusing between the adjacent film forming chambers. 316 is a pressure gauge, 315
Is an exhaust pipe for exhausting the supply chamber and the winding chamber, and 308 is a protective paper for protecting the belt-shaped substrate.

Next, the gas gate of the present invention will be described. In the gas gate of the present invention, the slit height of the slit-shaped separation passage of the gas gate is set so that the gas gate inlet side of the strip-shaped substrate is larger than the gas gate outlet side. By raising the gas gate inlet side, semiconductor elements can be deposited without damaging the band-shaped substrate surface inside the gas gate due to the corrugation or warpage of the band-shaped substrate generated by heating. In addition, by changing the conductance in the separation passage, the flow of the separation gas introduced from the separation gas introduction pipe of the gas gate can be controlled to minimize the mixing and diffusion of gas in the film formation chambers that are connected by the gas gate. You can The change in the slit height of the gas gate may be two steps or more, and may be inclined with respect to the longitudinal direction of the strip substrate.

As an example thereof, the one shown in FIGS. 1 and 2 are schematic views showing an example of a gas gate cross-sectional view of the manufacturing apparatus of the present invention. The slit height in the slit-shaped separation passage is the gas gate inlet side 105 of the strip substrate from the center of the gas gate with respect to the longitudinal direction of the strip substrate,
205 is set to be larger than the gas gate outlet sides 106 and 206. The strip substrates 101 and 202 are supported by the gas gate constituent members 107 and 207 from the back side by the magnetic force of the magnets 103 and 203. The slit height change in the separation passage, which is a feature of the present invention, may be stepwise or continuous. In the case of a stepwise change, the number of steps may be two, three, four or more. As the gas gate constituent member in the present invention, ceramics such as alumina, glass such as quartz, or these, which are less likely to be thermally deformed or worn even if the belt-shaped substrate heated to a temperature suitable for film formation is in contact for a long time, And the like. As for the shape of the gas gate constituent member, the surface is basically flat, but a groove may be provided in the substrate longitudinal direction in order to stabilize the gas flow on the back surface of the substrate. Further, in order to enhance the adhesion between the substrate and the gas gate constituent member and prevent the substrate from being lifted up from the opening cross-section adjusting member even if the substrate is slightly wavy or warped, a ferromagnetic strip-shaped substrate such as SUS430 rope. It is effective to use.

The roller used in the present invention preferably has a cylindrical shape, and the direction of rotation of the roller is perpendicular to the conveying direction of the strip-shaped substrate and substantially horizontal to the wall surface of the gas gate on the back side of the strip-shaped substrate of the slit-shaped separation passage of the gas gate. In addition, it is preferable to dispose the roller surface at a position slightly (about 0.1 to 5 mm) protruding from the wall surface of the gas gate. The gap between the slit-shaped separation passages is usually about 1 to 10 mm. It is preferable that the number of rollers that support the belt-shaped substrate be such that the number of rollers is such that transportation can be facilitated. Therefore, the size, weight, material of the substrate,
It is set appropriately depending on the structure of the gas gate, etc.
It may be arranged about 5 to 50 rows / m in the carrying direction. Although the diameter of the roller is not particularly specified, it is usually about 5 to 50 mm.

As the separation gas used in the present invention,
Examples of the gas include H2, He, Ar and the like. Considering only the gas separation function as the separation gas, a gas having a large collision cross section and a small mean free path is desirable. Among the above gases, Ar is optimal when the influence on the glow discharge in the film formation chamber can be neglected. When the amount of H2 contained in the semiconductor thin film formed in the film forming chamber is large, H2 is optimal. He is optimal when it is not desired to affect both the glow discharge in the film formation chamber and the semiconductor thin film formed in the film formation chamber.

Next, the present invention will be specifically described with reference to experimental examples and examples.

(Experimental Example 1) A material SUS4 having a width of 356 mm and a thickness of 0.12 mm was used as a belt-shaped substrate using the apparatus shown in FIG.
A band-shaped substrate made of 30BA was set, tension was applied, heating was performed with a lamp heater, and the deformation of the substrate was visually evaluated through a peep hole attached to the side. Approximately 3m directly under the mag roller when heated to a substrate temperature of 300 ℃
A warp of about m was observed. Further, the warp amount of this substrate became larger as the temperature was raised. In addition, as the substrate, a material SUS43 having a width of 356 mm and a thickness of 0.12 mm is used.
"Band-shaped substrate made of 0BA" and "width 356 mm, thickness 0.
Ag4500ÅZ on 12mm material SUS430BA
When the “band-shaped substrate on which nO was vapor-deposited by 1 μm” was compared, the latter was more warped.

Experimental Example 2 Using the apparatus shown in FIG. 3, a material SUS430BA having a width of 357 mm and a thickness of 0.12 mm.
The strip-shaped substrate made of was moved while changing the transport speed, and discharge was made to measure how much the temperature dropped in the gas gate. The points where the temperature was measured are shown in FIG. The width direction of the strip substrate was measured only at the center. The high pressure side was maintained at 1 Torr and the low pressure side was maintained at 10 mTorr, and H21000 sccm was flown from the separation gas introduction pipe 704 in the figure. The temperature was measured by contacting from the back surface of the strip-shaped substrate with a thermocouple under the conditions of the gas gate (with or without cooling means) and the conditions of changing the transport speed, and the results are shown in Table 1.

[Table 1] Since the experiment was conducted with the gas gate of the present invention, there are no scratches due to the gas gate, but as shown in Table 1, the temperature of the strip-shaped substrate is still high among the gas gates, and in consideration of the results of Experimental Example 1, the substrate is also in the gas gate. It can be seen that the warp has occurred. The substrate temperature in the gas gate is higher when the transfer speed is faster,
It was found that the contact cooling by the rollers has the effect of actually lowering the substrate temperature.

[0017]

【Example】

[Example 1] With the solar cell manufacturing apparatus using the present invention shown in Fig. 3, PI was formed on a strip substrate by the following operation.
An N-type amorphous solar cell was formed. First, width 356m
A strip-shaped substrate 307 having a length of 400 mm and a thickness of 0.12 mm was set to be unwound from the substrate unwinding chamber 301, passed through the three film forming chambers 302 to 304, and wound in the substrate winding chamber 305. Gas gate 30 between each deposition chamber
6 are connected. A gas gate of the type shown in FIG. 1 is used between the film forming chambers 302 and 303, and the entrance side slit height is 5 m.
m, outlet side slit height 2 mm, separation gas introduction pipe 10
The positions of 4, 314 were set to 100 mm from the slit entrance. A gas gate of the type shown in FIG. 2 was used between the film forming chambers 303 and 304, and the inlet side slit height was 5 mm and the outlet side slit height was 2 mm, and the positions of the separation gas introduction pipes 204 and 314 were 100 mm from the slit outlet. In addition, the film formation chamber 301
Between -302 and 304-305, the slit height is constant at 5 mm from the inlet side to the outlet side, and the separation gas introduction pipe 314 is provided.
A gas gate of the type in which the position of is the center of the slit portion was used. The length of the slit portion of each gas gate 306 is 400 mm.

Next, the respective film forming chambers are connected to exhaust pipes 311 and 3 respectively.
After sufficiently exhausting at 15, the respective film forming gases are introduced into the respective film forming chambers through the gas introducing pipes 310 while continuously exhausting, and while confirming the pressure gauge 316, the evacuation amount is adjusted and the film forming chambers 301, 302, The film forming chamber 303 was adjusted to 1 Torr and the film forming chamber 303 was adjusted to 10 mTorr. Gas gate 306
H2 as a separation gas was introduced into the slits of 1000 sccm from the upper and lower gas introduction pipes 314, respectively. The heater 309 is used to remove the strip-shaped substrate 307 from the back side in the film forming chamber 30.
2,303,304 at 290 ℃, 300 ℃, 7
After heating to 0 ° C., high-frequency power is introduced from the high-frequency electrode 312 and microwave power is introduced from the microwave waveguide 313, and glow discharge is generated in each film forming chamber to convey the strip-shaped substrate at a constant speed and move it onto the strip-shaped substrate. An n, i, p type amorphous film was continuously formed.

The band-shaped substrate on which the amorphous silicon film obtained by the above method is deposited is taken out from the roll-to-roll by the solar cell manufacturing apparatus using the present invention and 120 mm.
It was cut into a size of 356 mm and placed in a vacuum evaporation treatment apparatus, and an ITO transparent electrode was deposited by a vacuum evaporation method to prepare a solar cell. The obtained solar cell exhibits good photoelectric conversion efficiency equivalent to that of a solar cell manufactured by a three-chamber separation type deposition film forming apparatus that completely separates each film forming chamber, and the impurity distribution in the film thickness direction is determined by the secondary ion. As a result of measurement using mass spectrometry (SIMS), no P atom in the n-layer and B atom in the p-layer were found to be mixed in the i-layer. It was confirmed that the gas gate of the present invention separated completely. Further, when taken out from the roll-to-roll apparatus, there was no scratch or the like on the surface of the strip-shaped substrate on which the amorphous film was deposited, and no defect due to scratches was found in the fabricated solar cell.

[Example 2] A PIN type amorphous solar cell was formed on a belt-shaped substrate by the following operation by the solar cell manufacturing apparatus using the present invention shown in FIG. First, a strip-shaped substrate 407 having a width of 356 mm, a length of 400 mm, and a thickness of 0.12 mm is unwound from the substrate unwinding chamber 401, passes through the three film forming chambers 402 to 404, and is wound in the substrate winding chamber 405. Set to. A gas gate 406 connects between the film forming chambers. Film forming chamber 402-
In the gas gate between 403, the slit height was continuously changed from the entrance slit height 5 mm to the exit slit height 2 mm, and the position of the separation gas introduction pipe 414 was set to 100 mm from the slit entrance. The gas gate between the film forming chambers 403-404 has a slit height of 5 mm on the inlet side to a slit height of 2 m on the outlet side.
The slit height continuously changed to m, and the position of the separation gas introduction pipe 414 was set to 100 mm from the slit outlet. Further, between the film forming chambers 401-402 and 404-405, a gas gate of a type having a constant slit height of 5 mm from the inlet side to the outlet side was used. The length of the slit portion of each gas gate 406 is 400 mm. Hereinafter, a solar cell was prepared in the same manner as in Example 1. The obtained solar cell showed good photoelectric conversion efficiency as in Example 1, and no scratch defect or the like was observed.

Example 3 A PIN type amorphous solar cell was formed on a belt-shaped substrate by the following operation using the solar cell manufacturing apparatus using the present invention shown in FIG. First, a strip substrate 307 having a width of 356 mm, a length of 400 mm, and a thickness of 0.12 mm is unwound from the substrate unwinding chamber 301, passes through the three film forming chambers 302 to 304, and is wound up in the substrate winding chamber 305. Set to. A gas gate 306 connects between the film forming chambers. Deposition chamber 302-
A portion between 303 is a gas gate of the type shown in FIG. 5, a cooling water passage 508 is arranged outside the gas gate constituting member 507, and cooling water is caused to flow inside to cool the gas gate 306 and the strip-shaped substrates 307, 501. In the figure, 505 is the gas gate inlet side, and 506 is the gas gate outlet side. Further, the height of the slit on the inlet side was 5 mm and the height of the slit on the outlet side was 2 mm, and the positions of the gas introducing pipes 504 and 314 for separation were 100 mm from the slit inlet. Film forming chamber 303-304
The space is almost the same as in FIG. 5, and a gas gate of a type in which the position of the separation gas introduction pipe 314 is 100 mm from the slit outlet is used. Further, between the film forming chambers 301-302 and 304
Between -305, the slit height is 5mm from the inlet side to the outlet side.
A gas gate of a type in which the position of the separation gas introduction pipe 314 was constant and the center of the slit portion was used. The length of the slit portion of each gas gate 306 is 400 mm.

Next, the film forming chambers are exhausted to exhaust pipes 311 and 3 respectively.
After sufficiently exhausting at 15, the respective film forming gases are introduced into the respective film forming chambers through the gas introducing pipes 310 while continuously exhausting, and while confirming the pressure gauge 316, the evacuation amount is adjusted and the film forming chambers 301, 302, The film forming chamber 303 was adjusted to 1 Torr and the film forming chamber 303 was adjusted to 10 mTorr. Gas gate 306
H2 as a separation gas was introduced into the slits of 1000 sccm from the upper and lower gas introduction pipes 314, respectively. The heater 309 is used to remove the strip-shaped substrate 307 from the back side in the film forming chamber 30.
2,303,304 at 290 ℃, 310 ℃, 7 respectively
After heating to 0 ° C., high-frequency power is introduced from the high-frequency electrode 312 and microwave power is introduced from the microwave waveguide 313, and glow discharge is generated in each film forming chamber to convey the strip-shaped substrate at a constant speed and move it onto the strip-shaped substrate. An n, i, p type amorphous film was continuously formed. Hereinafter, a solar cell was prepared in the same manner as in Example 1. The obtained solar cell showed good photoelectric conversion efficiency as in Example 1, and no scratches or defects were observed.

[Fourth Embodiment] Similar to the third embodiment, the cooling means for the gas gate is a cooling water passage 60 as shown in FIG.
8 may be arranged inside the roller 602 and cooling water may be caused to flow inside the roller 602 to cool the gas gate 306 and the belt-shaped substrates 307 and 601. In the figure, 605 is the gas gate inlet side, and 606 is the gas gate outlet side.
Even when a solar cell was manufactured in the same manner as in Example 3 using the cooling means shown in FIG. 6, the same effect was obtained. In this case, when the temperature of the strip-shaped substrate in the previous discharge box was further raised by 30 ° C., the edge of the strip-shaped substrate was scratched and scratched without the cooling means, whereas the device shown in FIG. I didn't.

[0024]

As described above, according to the present invention, in the continuous semiconductor device manufacturing apparatus, the opening surface of the gas gate for connecting the film forming chambers having different film forming pressures with respect to the longitudinal direction in which the strip-shaped substrate moves. Then, it is formed stepwise or continuously so that the gas gate inlet side is large and the outlet side is small, and the separation gas blown out to the gas gate is provided on the film forming chamber side where the film forming pressure is large. The surface of the strip-shaped substrate is not scratched inside the gas gate due to the corrugation and warpage of the strip-shaped substrate, and the film-forming gas can be prevented from mixing and diffusing between the adjacent film-forming chambers. In addition, the pressure suitable for film formation can be secured, and a continuous semiconductor device manufacturing apparatus with high productivity can be realized. Further, the present invention provides a cooling mechanism for cooling the gas gate and the strip-shaped substrate, and a cooling means provided inside the gas gate is brought into contact with the back surface of the strip-shaped substrate to provide the gas gate and the strip-shaped substrate. By configuring to cool the substrate, it is possible to form a laminated semiconductor film with desired characteristics by appropriately controlling the temperature when moving the strip-shaped substrate from the high temperature film forming chamber to the low temperature film forming chamber. Becomes

[Brief description of the drawings]

FIG. 1 is a schematic view of a gas gate of the present invention in which a high pressure film forming chamber is provided on the inlet side and a low pressure film forming chamber is provided on the outlet side.

FIG. 2 is a schematic view of the gas gate of the present invention in which the inlet side is a low pressure film forming chamber and the outlet side is a high pressure film forming chamber.

FIG. 3 is a roll-to-roll solar cell manufacturing apparatus used in Example 1 of the present invention.

FIG. 4 is a roll-to-roll solar cell manufacturing apparatus used in Example 2 of the present invention.

FIG. 5 is a cooling type gas gate used in Example 3 of the present invention.

FIG. 6 is a cooling type gas gate used in Example 4 of the present invention.

FIG. 7 is a diagram showing a location where a temperature was measured by contact with a thermocouple in Experimental Example 2 of the present invention.

[Explanation of symbols]

101, 201, 501, 601, 307 407, 701 ... Strip-shaped substrates 102, 202, 502, 602, 702 ... Rollers 103, 203, 503, 603, 703 ... Magnets 104, 204, 504, 604, 314 414, 704 ... Separation gas introduction pipe 105, 205, 505, 605 705 ... Gas gate inlet side slit 106, 206, 506, 606 706 ... Gas gate outlet side slit 107 , 207, 507, 607 707 ... Gas gate constituent members 508, 608 ... Cooling water channels 302, 303, 304, 401, 403, 404 ...
.. Deposition chambers 301, 401 ... Roll-out chambers for strip substrates 305, 405 ... Roll-up chambers for strip substrates 306, 406 ... Gas gates 308, 408 ... Protective paper 309 409 ... Heating heater 310, 410 ... Gas introduction pipe 311, 315, 411, 415 ... Exhaust pipe 312, 412 ... High frequency electrode 313, 413 ... Microwave waveguide 316, 416 ... Pressure gauge

 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Goto Yoshino 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Hiroshi Echizen 3-30-2 Shimomaruko, Ota-ku, Tokyo Kya Non-Incorporated (72) Inventor Atsushi Hono 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Masahiro Kanai 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc.

Claims (3)

[Claims] 1. A semiconductor device is formed on the belt-shaped substrate while passing the belt-shaped substrate continuously through a plurality of film-forming chambers having different film-forming pressures connected by a gas gate having a slit-shaped separation passage while continuously conveying the belt-shaped substrate. In a continuous manufacturing apparatus of semiconductor devices for continuously forming a film, the opening surface of the gas gate connecting the film forming chambers having different film forming pressures is stepwise or continuous with respect to the moving longitudinal direction of the strip-shaped substrate. A continuous manufacturing apparatus for semiconductor devices, characterized in that the gas gate is formed so that the inlet side is large and the outlet side is small, and a separation gas outlet for flowing to the gas gate is provided on the film forming chamber side where the film forming pressure is large. . 2. The apparatus for continuously manufacturing semiconductor devices according to claim 1, wherein the gas gate is provided with a cooling mechanism. 3. The cooling mechanism is configured to cool the gas gate and the strip-shaped substrate by bringing a cooling means provided inside the gas gate into contact with the back surface of the strip-shaped substrate. An apparatus for continuously manufacturing a semiconductor device according to claim 2.