JPH09129577A - Adhesive sheet for wafer bonding and manufacture of semiconductor device using it as well as its semiconductor device - Google Patents
Adhesive sheet for wafer bonding and manufacture of semiconductor device using it as well as its semiconductor deviceInfo
- Publication number
- JPH09129577A JPH09129577A JP28532395A JP28532395A JPH09129577A JP H09129577 A JPH09129577 A JP H09129577A JP 28532395 A JP28532395 A JP 28532395A JP 28532395 A JP28532395 A JP 28532395A JP H09129577 A JPH09129577 A JP H09129577A
- Authority
- JP
- Japan
- Prior art keywords
- radiation
- wafer
- curable
- chip
- fixing layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000853 adhesive Substances 0.000 title claims abstract description 117
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 117
- 239000004065 semiconductor Substances 0.000 title claims description 57
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 229920001721 polyimide Polymers 0.000 claims abstract description 67
- 230000005855 radiation Effects 0.000 claims abstract description 67
- 229920005989 resin Polymers 0.000 claims abstract description 52
- 239000011347 resin Substances 0.000 claims abstract description 52
- 238000000465 moulding Methods 0.000 claims abstract description 24
- 239000004642 Polyimide Substances 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 239000009719 polyimide resin Substances 0.000 claims description 51
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 15
- 238000001035 drying Methods 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 238000000034 method Methods 0.000 abstract description 25
- 230000008569 process Effects 0.000 abstract description 16
- 235000012431 wafers Nutrition 0.000 description 133
- 239000010410 layer Substances 0.000 description 58
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- 239000000843 powder Substances 0.000 description 12
- 150000002484 inorganic compounds Chemical class 0.000 description 9
- 229910010272 inorganic material Inorganic materials 0.000 description 9
- 238000007789 sealing Methods 0.000 description 9
- 238000000149 argon plasma sintering Methods 0.000 description 8
- 238000010894 electron beam technology Methods 0.000 description 7
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- 239000006061 abrasive grain Substances 0.000 description 6
- 238000001723 curing Methods 0.000 description 6
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
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- 239000000178 monomer Substances 0.000 description 4
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- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 3
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
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- 125000003118 aryl group Chemical group 0.000 description 3
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- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 3
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- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 description 2
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- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
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- 239000012790 adhesive layer Substances 0.000 description 2
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- 239000011248 coating agent Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
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- 125000001037 p-tolyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
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- 238000003847 radiation curing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
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- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
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- 229920003002 synthetic resin Polymers 0.000 description 2
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- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 2
- RUELTTOHQODFPA-UHFFFAOYSA-N toluene 2,6-diisocyanate Chemical compound CC1=C(N=C=O)C=CC=C1N=C=O RUELTTOHQODFPA-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- LIZLYZVAYZQVPG-UHFFFAOYSA-N (3-bromo-2-fluorophenyl)methanol Chemical compound OCC1=CC=CC(Br)=C1F LIZLYZVAYZQVPG-UHFFFAOYSA-N 0.000 description 1
- MYWOJODOMFBVCB-UHFFFAOYSA-N 1,2,6-trimethylphenanthrene Chemical compound CC1=CC=C2C3=CC(C)=CC=C3C=CC2=C1C MYWOJODOMFBVCB-UHFFFAOYSA-N 0.000 description 1
- FKTHNVSLHLHISI-UHFFFAOYSA-N 1,2-bis(isocyanatomethyl)benzene Chemical compound O=C=NCC1=CC=CC=C1CN=C=O FKTHNVSLHLHISI-UHFFFAOYSA-N 0.000 description 1
- QWUWMCYKGHVNAV-UHFFFAOYSA-N 1,2-dihydrostilbene Chemical group C=1C=CC=CC=1CCC1=CC=CC=C1 QWUWMCYKGHVNAV-UHFFFAOYSA-N 0.000 description 1
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- LFSYUSUFCBOHGU-UHFFFAOYSA-N 1-isocyanato-2-[(4-isocyanatophenyl)methyl]benzene Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=CC=C1N=C=O LFSYUSUFCBOHGU-UHFFFAOYSA-N 0.000 description 1
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- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
- WDQMWEYDKDCEHT-UHFFFAOYSA-N 2-ethylhexyl 2-methylprop-2-enoate Chemical compound CCCCC(CC)COC(=O)C(C)=C WDQMWEYDKDCEHT-UHFFFAOYSA-N 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
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- GWZMWHWAWHPNHN-UHFFFAOYSA-N 2-hydroxypropyl prop-2-enoate Chemical compound CC(O)COC(=O)C=C GWZMWHWAWHPNHN-UHFFFAOYSA-N 0.000 description 1
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- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
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- JHWGFJBTMHEZME-UHFFFAOYSA-N 4-prop-2-enoyloxybutyl prop-2-enoate Chemical compound C=CC(=O)OCCCCOC(=O)C=C JHWGFJBTMHEZME-UHFFFAOYSA-N 0.000 description 1
- FIHBHSQYSYVZQE-UHFFFAOYSA-N 6-prop-2-enoyloxyhexyl prop-2-enoate Chemical compound C=CC(=O)OCCCCCCOC(=O)C=C FIHBHSQYSYVZQE-UHFFFAOYSA-N 0.000 description 1
- 229920002126 Acrylic acid copolymer Polymers 0.000 description 1
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- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- 229920006259 thermoplastic polyimide Polymers 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73215—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【発明の技術分野】本発明は、半導体ウェハ（以下ウェ
ハという）貼着用粘着シートおよびこれを用いて得られ
る半導体装置および該半導体装置の製造方法に関し、さ
らに詳しくは、ウェハを素子小片（以下チップという）
に分離し、該チップ裏面の一部または全部がパッケージ
成型用のモールド樹脂に接触する構造の半導体装置を製
造する一連の工程においてウェハプロセス終了後の、複
数のチップが形成されたウェハを一つ一つのチップ毎に
切断し、分割する際に使用するウェハ固定用のウェハ貼
着用粘着シートならびにこれを用いて得られる半導体装
置および該半導体装置の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pressure-sensitive adhesive sheet for adhering a semiconductor wafer (hereinafter referred to as a wafer), a semiconductor device obtained by using the same, and a method for manufacturing the semiconductor device. Say)
In a series of steps of manufacturing a semiconductor device having a structure in which a part or the whole of the back surface of the chip is in contact with the molding resin for package molding, a wafer with a plurality of chips formed after the wafer process is completed. The present invention relates to a wafer-bonding pressure-sensitive adhesive sheet for fixing a wafer, which is used when cutting and dividing each chip, a semiconductor device obtained by using the same, and a method for manufacturing the semiconductor device.
【０００２】[0002]
【発明の技術的背景】近年、半導体装置において、メモ
リーの高集積化に伴い、高速化、低消費電流化、さらに
は出力の語構成やパッケージのバリエーションの拡大等
ユーザーのニーズは多様化している。このような多様な
ニーズに対応するにはフレキシブルなパッケージ設計が
必要になる。2. Description of the Related Art In recent years, as semiconductor devices have become more highly integrated, the needs of users have diversified such as speeding up, low current consumption, and expansion of output word configurations and package variations. . Flexible package design is needed to meet such diverse needs.
【０００３】このような要求に応えるため、ＬＯＣ（le
ad on chip）構造の半導体装置が提案されている（たと
えば、NIKKEI MICRODEVICES １９９１年２月号 ８９〜
９７頁あるいは特開平２−２４６１２５号公報参照）。
ＬＯＣ構造の利点としては、小型化、高速化、雑音の減
少、レイアウトの容易さ等があげられ、今後開発が予想
される大規模半導体装置においては、ＬＯＣ構造の採用
が有力と言われている。In order to meet such requirements, LOC (le
A semiconductor device having an ad on chip structure has been proposed (eg, NIKKEI MICRODEVICES February 1991 89-).
See page 97 or JP-A-2-246125).
The advantages of the LOC structure include downsizing, speeding up, noise reduction, and ease of layout, and it is said that the LOC structure is considered to be effective for large-scale semiconductor devices that are expected to be developed in the future. .
【０００４】ＬＯＣ構造は、図７に示すように、チップ
の回路形成面上に、半導体装置用リードフレーム（以下
リードフレームという）の複数のインナーリードが、前
記チップと電気的に絶縁する絶縁テープを介在して接着
され、該インナーリードとチップとがそれぞれボンディ
ングワイヤで電気的に接続されてなる構造であり、半導
体装置はモールド樹脂により封止されており、チップ裏
面がモールド樹脂に接触する構造である。As shown in FIG. 7, the LOC structure is an insulating tape in which a plurality of inner leads of a semiconductor device lead frame (hereinafter referred to as a lead frame) are electrically insulated from the chip on the circuit formation surface of the chip. A structure in which the inner lead and the chip are electrically connected to each other by bonding wires, the semiconductor device is sealed with a mold resin, and the back surface of the chip is in contact with the mold resin. Is.
【０００５】ＬＯＣ構造には、上記のように種々の利点
があるが、従来のパッケージと全く違う構造であるた
め、さまざまな課題を克服する必要がある。解決される
べき課題として、チップと封止樹脂との界面の剥離や、
パッケージクラックの発生等による信頼性の低下があげ
られる。Although the LOC structure has various advantages as described above, it is necessary to overcome various problems because the LOC structure is completely different from the conventional package. As a problem to be solved, peeling of the interface between the chip and the sealing resin,
The decrease in reliability due to the occurrence of package cracks can be mentioned.
【０００６】またこのようなパッケージクラックの発生
に伴う信頼性の低下は、上記ＬＯＣ構造の半導体装置に
固有の問題ではなく、図８〜９に示すような、チップ裏
面の一部または全部がモールド樹脂に接触する構造の半
導体装置全般において、極めて深刻な問題である。図８
は、ダイパットにスリットのある構造の半導体装置を示
し、図９は、ＣＯＬ（chip on lead）構造の半導体装置
を示す。The decrease in reliability due to the occurrence of such a package crack is not a problem peculiar to the semiconductor device having the LOC structure, and a part or all of the back surface of the chip is molded as shown in FIGS. This is an extremely serious problem in general semiconductor devices having a structure in contact with resin. FIG.
Shows a semiconductor device having a slit in the die pad, and FIG. 9 shows a semiconductor device having a COL (chip on lead) structure.
【０００７】前述したチップと封止樹脂の剥離、パッケ
ージクラックの発生するメカニズムは現在、様々に報告
されている。ＩＣパッケージに侵入する水分の経路とし
て大別すると次のようである。Various mechanisms have been reported at present for the above-mentioned mechanism of peeling between the chip and the sealing resin and the generation of package cracks. The routes of water invading the IC package are roughly classified as follows.
【０００８】１）リードフレームと樹脂との界面より侵
入 ２）樹脂中に充填されるフイラーと樹脂の界面より侵入 ３）樹脂のバルクから侵入 これらは、毛管現象や拡散によるものであるが、ＩＣパ
ッケージが放置される環境温度が高いほど、そして湿度
が高いほど吸湿し易い。また環境温度が高いほど初期段
階の水分拡散速度は速く、吸湿飽和点に早く達し、８５
℃／８５％ＲＨ（ＲＨ：相対湿度）の環境下にＩＣパッ
ケージを放置し吸湿させた結果では、約１６８時間で飽
和点の８０〜９０％に達しているとの報告がある。ま
た、常温で７５％ＲＨという通常の環境下でもＩＣパッ
ケージの樹脂封止材である例えばエポキシ樹脂に容易に
水分が浸透する。1) Penetration from the interface between the lead frame and the resin 2) Penetration from the interface between the filler filled in the resin and the resin 3) Penetration from the bulk of the resin These are due to capillary phenomenon or diffusion, but IC The higher the ambient temperature in which the package is left and the higher the humidity, the easier it is to absorb moisture. In addition, the higher the ambient temperature, the faster the moisture diffusion rate in the initial stage and the faster the moisture absorption saturation point is reached.
As a result of allowing the IC package to stand under an environment of ° C / 85% RH (RH: relative humidity) to absorb moisture, it is reported that the saturation point reaches 80 to 90% in about 168 hours. Further, even under a normal environment of 75% RH at room temperature, moisture easily penetrates into the resin sealing material of the IC package, for example, epoxy resin.
【０００９】ＳＯＪ (small outline J bend package)
やＱＦＰ (quad inline flat package) などのＩＣパッ
ケージでは半田付けする場合、量産性の高い赤外線によ
り加熱するＩＲリフローや不活性液体を蒸発させてその
高温蒸気にさらす蒸気リフローが使われる。前者のＩＲ
リフローでは２４０〜２５０℃という高温にさらされ、
ＩＣパッケージ内に前述したように侵入した水がリフロ
ー時の高温下で爆発的に膨張するためエポキシ樹脂とリ
ードフレームの界面に水蒸気圧が加わり界面剥離を起こ
しパッケージクラックへと至る。SOJ (small outline J bend package)
When soldering with IC packages such as QFP (quad inline flat package) and the like, IR reflow that heats by infrared rays, which has high mass productivity, or vapor reflow that evaporates an inert liquid and exposes it to its high temperature steam is used. The former IR
In reflow, it is exposed to the high temperature of 240-250 ℃,
As described above, the water that has entered the IC package explosively expands at high temperature during reflow, so that water vapor pressure is applied to the interface between the epoxy resin and the lead frame, causing interfacial peeling and leading to package cracks.
【００１０】パッケージ内部のリードフレームの形状や
チップ面積などにもよるが１６８時間位の常温環境下放
置でもＩＲリフローによるパッケージクラックが観察さ
れることがしばしばある。Although depending on the shape of the lead frame inside the package and the chip area, package cracks due to IR reflow are often observed even when left for 168 hours in a normal temperature environment.
【００１１】界面剥離を助長する因子の一つに、パッケ
ージ用封止樹脂材として使用する例えばエポキシ樹脂と
チップ接触面との接着強度の低下がある。一般に接着強
度は被接着表面の清浄度に大きく左右され、その表面に
残存するオングストロームレベルの異物膜にも敏感に反
応し接着強度を低下させ水分の侵入、保持を容易にし、
最終的にパッケージクラックに至らしめることになる。One of the factors that promote the interfacial peeling is a decrease in the adhesive strength between the chip contact surface and the epoxy resin used as the package sealing resin material. Generally, the adhesive strength is greatly affected by the cleanliness of the surface to be adhered, and it also reacts sensitively to the angstrom-level foreign matter film remaining on the surface to reduce the adhesive strength, facilitating the entry and retention of water,
Eventually it will lead to a package crack.
【００１２】ところで、シリコン、ガリウムヒ素などの
半導体ウェハは大径の状態で製造され、このウェハはチ
ップに切断分離（ダイシング）された後に次の工程であ
るマウント工程に移されている。この際、半導体ウェハ
は予じめ放射線硬化型粘着シートに貼着された状態でダ
イシング、洗浄、乾燥し、粘着シート面側に放射線を照
射して放射線硬化型粘着剤層を硬化させる工程が加えら
れ、次いで必要に応じシートのエキスパンドを行った
後、チップのピックアップ、マウントの各工程が加えら
れている。By the way, a semiconductor wafer of silicon, gallium arsenide or the like is manufactured in a large diameter state, and this wafer is cut and separated (diced) into chips and then moved to a mounting step which is the next step. At this time, the semiconductor wafer is preliminarily attached to the radiation-curable pressure-sensitive adhesive sheet, followed by dicing, washing, and drying, and a step of irradiating the adhesive sheet surface side with radiation to cure the radiation-curable pressure-sensitive adhesive layer is added. Then, after expanding the sheet as needed, the steps of picking up and mounting the chip are added.
【００１３】このようなウェハのダイシング工程からピ
ックアップ工程に至る工程で用いられる粘着シートとし
ては、ダイシング工程からエキスパンド工程までではウ
ェハおよび／またはチップに対して充分な接着力を有し
ており、ピックアップ工程ではウェハチップに粘着剤が
付着しない程度の接着力を有しているものが望まれてい
る。このようなウェハ貼着用粘着シートとしては、たと
えば特公平１−５６１１２号公報に記載のシート等が汎
用されており、従来型の半導体装置の製造においては、
何ら問題なく使用できた。The pressure-sensitive adhesive sheet used in the steps from the wafer dicing step to the pickup step has sufficient adhesive force to the wafer and / or the chips from the dicing step to the expanding step. In the process, it is desired that the wafer chip has an adhesive force such that the adhesive does not adhere to the wafer chip. As such a wafer sticking pressure-sensitive adhesive sheet, for example, a sheet described in Japanese Patent Publication No. 1-56112 is widely used, and in the production of a conventional semiconductor device,
It could be used without any problems.
【００１４】ところが、上記したチップ裏面の一部また
は全部がモールド樹脂に接触する構造の半導体装置製造
に際しては、パッケージ・クラックが発生する等の支障
が見られ、信頼性の低下を招いた。However, when manufacturing a semiconductor device having a structure in which a part or all of the back surface of the chip is in contact with the mold resin, problems such as package cracks are observed, and reliability is lowered.
【００１５】このようなパッケージ・クラックの発生を
防止すべく、種々の提案がなされており、たとえば、ウ
ェハ裏面にポリイミド系樹脂層を形成し、ウェハとポリ
イミド系樹脂層を同時にダイシングして、裏面にポリイ
ミド系樹脂層を有するチップを樹脂で封止することによ
り、上記の問題が解消されることがある。チップ裏面に
ポリイミド系樹脂を形成しておくと、理由は定かではな
いが、封止樹脂とポリイミド系樹脂との間に極めて高い
接着強度が得られ、この結果、チップと封止樹脂とが、
ポリイミド系樹脂層を介して強固に接着するため、パッ
ケージ・クラックが防止される。Various proposals have been made to prevent the occurrence of such package cracks. For example, a polyimide resin layer is formed on the back surface of the wafer, and the wafer and the polyimide resin layer are diced at the same time to form the back surface. The above problem may be solved by sealing the chip having the polyimide resin layer with resin. If the polyimide resin is formed on the back surface of the chip, the reason is not clear, but extremely high adhesive strength is obtained between the sealing resin and the polyimide resin, and as a result, the chip and the sealing resin are
Since it adheres firmly via the polyimide resin layer, package cracks are prevented.
【００１６】しかしながら、ウェハ裏面にポリイミド系
樹脂層を形成するためには、ポリイミド系樹脂被膜を３
００℃という高温で長時間ウェハに熱圧着する必要があ
り、作業効率上、改善が求められていた。However, in order to form a polyimide resin layer on the back surface of the wafer, a polyimide resin coating is applied to the back surface of the wafer.
It was necessary to thermocompression-bond the wafer at a high temperature of 00 ° C. for a long time, and improvement was required in terms of work efficiency.
【００１７】[0017]
【発明の目的】本発明は、上記のような従来技術に鑑み
てなされたものであって、チップ裏面の一部または全部
がパッケージ成型用のモールド樹脂に接触する構造の半
導体装置の製造に際して用いられ、パッケージ・クラッ
ク等の発生を防止し、信頼性を向上することができるウ
ェハ貼着用粘着シートならびにこれを用いて得られる半
導体装置および該半導体装置の製造方法を提供すること
を目的としている。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned prior art, and is used for manufacturing a semiconductor device having a structure in which a part or all of the back surface of a chip is in contact with a molding resin for molding a package. It is an object of the present invention to provide a pressure-sensitive adhesive sheet for wafer sticking, which can prevent the occurrence of packages, cracks and the like, and improve reliability, a semiconductor device obtained by using the same, and a method for manufacturing the semiconductor device.
【００１８】[0018]
【発明の概要】本発明に係るウェハ貼着用粘着シート
は、基材フィルムと、この上に形成された放射線硬化型
ウェハ固定層とからなり、該放射線硬化型ウェハ固定層
が、放射線硬化型接着剤部とポリイミド系樹脂部とが互
いに重ならないようにパターンコートされてなり、該放
射線硬化型接着剤部の面積と該ポリイミド系樹脂部の面
積の比（放射線硬化型接着剤部／ポリイミド系樹脂部）
が１／１００〜１００／１の範囲にあり、その表面に回
路が形成されるウェハの裏面を前記放射線硬化型ウェハ
固定層に貼付し、この状態で前記ウェハをチップ単体に
ダイシングし、洗浄し、乾燥し、放射線を照射して前記
放射線硬化型接着剤部の粘着力を低下させ、次いで前記
放射線硬化型ウェハ固定層を加熱し、その後、前記チッ
プをチップ裏面にポリイミド系樹脂部を伴ってピックア
ップして、リードフレームにマウントし、ボンディング
し、モールドして、前記チップ裏面の一部または全部が
パッケージ成型用モールド樹脂に接する構造の半導体装
置を製造する際に用いられることを特徴としている。SUMMARY OF THE INVENTION A wafer sticking pressure-sensitive adhesive sheet according to the present invention comprises a substrate film and a radiation-curable wafer fixing layer formed thereon, and the radiation-curable wafer fixing layer is a radiation-curable adhesive. The agent portion and the polyimide resin portion are pattern-coated so as not to overlap each other, and the ratio of the area of the radiation curable adhesive portion to the area of the polyimide resin portion (radiation curable adhesive portion / polyimide resin) Part)
Is in the range of 1/100 to 100/1, and the back surface of the wafer on which the circuit is formed is attached to the radiation-curable wafer fixing layer, and in this state, the wafer is diced into a single chip and washed. , Drying, irradiating with radiation to reduce the adhesive force of the radiation-curable adhesive part, then heating the radiation-curable wafer fixing layer, and then the chip with the polyimide resin part on the back surface of the chip. It is characterized in that it is used for manufacturing a semiconductor device having a structure in which a part or all of the back surface of the chip is picked up, mounted on a lead frame, bonded, and molded, and a part or all of the back surface of the chip is in contact with the molding resin for package molding.
【００１９】本発明に係る半導体装置は、基材フィルム
と、この上に形成された放射線硬化型ウェハ固定層とか
らなり、該放射線硬化型ウェハ固定層が、放射線硬化型
接着剤部とポリイミド系樹脂部とが互いに重ならないよ
うにパターンコートされてなり、該放射線硬化型接着剤
部の面積と該ポリイミド系樹脂部の面積の比（放射線硬
化型接着剤部／ポリイミド系樹脂部）が１／１００〜１
００／１の範囲にあるウェハ貼着用粘着シートの放射線
硬化型ウェハ固定層に、その表面に回路が形成されるウ
ェハの裏面を貼付し、この状態で前記ウェハをチップ単
体にダイシングし、洗浄し、乾燥し、放射線を照射して
前記放射線硬化型接着剤部の粘着力を低下させ、次いで
前記放射線硬化型ウェハ固定層を加熱し、その後、前記
チップをチップ裏面にポリイミド系樹脂部を伴ってピッ
クアップして、リードフレームにマウントし、ボンディ
ングし、モールドして得られる、前記チップ裏面の一部
または全部がパッケージ成型用モールド樹脂に接する構
造の半導体装置であることを特徴としている。The semiconductor device according to the present invention comprises a substrate film and a radiation-curable wafer fixing layer formed on the substrate film, and the radiation-curable wafer fixing layer comprises a radiation-curable adhesive part and a polyimide system. The resin part is pattern-coated so as not to overlap with each other, and the ratio of the area of the radiation-curable adhesive part to the area of the polyimide-based resin part (radiation-curable adhesive part / polyimide-based resin part) is 1 / 100-1
The back side of the wafer on which the circuit is formed is stuck to the radiation-curable wafer fixing layer of the adhesive sheet for wafer sticking in the range of 00/1, and in this state, the wafer is diced into chips and washed. , Drying, irradiating with radiation to reduce the adhesive force of the radiation-curable adhesive part, then heating the radiation-curable wafer fixing layer, and then the chip with the polyimide resin part on the back surface of the chip. The semiconductor device is characterized in that a part or all of the back surface of the chip obtained by picking up, mounting on a lead frame, bonding, and molding is in contact with the molding resin for package molding.
【００２０】本発明に係る半導体装置の製造方法は、基
材フィルムと、この上に形成された放射線硬化型ウェハ
固定層とからなり、該放射線硬化型ウェハ固定層が、放
射線硬化型接着剤部とポリイミド系樹脂部とが互いに重
ならないようにパターンコートされてなり、該放射線硬
化型接着剤部の面積と該ポリイミド系樹脂部の面積の比
（放射線硬化型接着剤部／ポリイミド系樹脂部）が１／
１００〜１００／１の範囲にあるウェハ貼着用粘着シー
トの放射線硬化型ウェハ固定層に、その表面に回路が形
成されるウェハの裏面を貼付し、この状態で前記ウェハ
をチップ単体にダイシングし、洗浄し、乾燥し、放射線
を照射して前記放射線硬化型接着剤部の粘着力を低下さ
せ、次いで前記放射線硬化型ウェハ固定層を加熱し、そ
の後、前記チップをチップ裏面にポリイミド系樹脂部を
伴ってピックアップして、リードフレームにマウント
し、ボンディングし、モールドして、前記チップ裏面の
一部または全部がパッケージ成型用モールド樹脂に接す
る構造の半導体装置を製造することを特徴としている。The method of manufacturing a semiconductor device according to the present invention comprises a substrate film and a radiation-curable wafer fixing layer formed on the substrate film, wherein the radiation-curable wafer fixing layer is a radiation-curable adhesive part. And the polyimide resin portion are pattern-coated so as not to overlap each other, and the ratio of the area of the radiation curable adhesive portion to the area of the polyimide resin portion (radiation curable adhesive portion / polyimide resin portion) Is 1 /
To the radiation-curable wafer fixing layer of the pressure-sensitive adhesive sheet for wafer sticking in the range of 100 to 100/1, the back surface of the wafer on which the circuit is formed is stuck, and in this state the wafer is diced into chips. After cleaning, drying, and irradiating with radiation, the adhesive force of the radiation-curable adhesive part is reduced, then the radiation-curable wafer fixing layer is heated, and then the chip is coated with a polyimide resin part on the back surface of the chip. Along with this, the semiconductor device is characterized in that it is picked up, mounted on a lead frame, bonded, and molded to manufacture a semiconductor device having a structure in which a part or all of the back surface of the chip is in contact with a molding resin for package molding.
【００２１】本発明においては、前記半導体装置がＬＯ
Ｃ構造のものであることが特に好ましい。In the present invention, the semiconductor device is LO
A C structure is particularly preferable.
【００２２】[0022]
【発明の具体的説明】以下本発明に係るウェハ貼着用粘
着シートならびにこれを用いて得られる半導体装置およ
び該半導体装置の製造方法を具体的に説明する。DETAILED DESCRIPTION OF THE INVENTION The pressure-sensitive adhesive sheet for wafer sticking according to the present invention, the semiconductor device obtained by using the same and the method for manufacturing the semiconductor device will be specifically described.
【００２３】図１に示すように、本発明に係るウェハ貼
着用粘着シート１は、基材フィルム２と、この上に形成
された放射線硬化型ウェハ固定層３とからなり、該放射
線硬化型ウェハ固定層３は、放射線硬化型接着剤部３ａ
とポリイミド系樹脂部３ｂとがパターンコートされてな
る。このウェハ貼着用粘着シート１は、図３〜図６に示
すように、ウェハプロセス終了後のウェハＡを放射線硬
化型ウェハ固定層３に貼付し、この状態でウェハを一つ
一つのチップ毎にダイシング（切断）し複数のチップと
し、洗浄し、乾燥し、ウェハ貼着用粘着シート１の放射
線硬化型ウェハ固定層３に放射線を照射して放射線硬化
型接着剤部３ａを硬化させて粘着力を低減し、次いで前
記放射線硬化型ウェハ固定層を加熱し、その後、チップ
を、チップ裏面にポリイミド系樹脂部３ｂを伴って、放
射線硬化型ウェハ固定層３からピックアップし、所定の
基台上、例えばリードフレームにマウントし、樹脂でモ
ールドして、チップ裏面の一部または全部がモールド樹
脂に接触する構造の半導体装置を製造する際に用いられ
る。As shown in FIG. 1, a pressure-sensitive adhesive sheet for wafer attachment 1 according to the present invention comprises a substrate film 2 and a radiation-curable wafer fixing layer 3 formed on the substrate film 2, and the radiation-curable wafer. The fixed layer 3 includes the radiation curable adhesive portion 3a.
And the polyimide resin portion 3b are pattern-coated. This wafer sticking pressure-sensitive adhesive sheet 1 is, as shown in FIG. 3 to FIG. 6, a wafer A after completion of a wafer process is stuck to a radiation-curable wafer fixing layer 3, and in this state, the wafer is chip by chip. Dicing (cutting) into a plurality of chips, washing and drying, and irradiating the radiation-curable wafer fixing layer 3 of the adhesive sheet 1 for wafer attachment with radiation to cure the radiation-curable adhesive part 3a to increase the adhesive strength. Then, the radiation-curable wafer fixing layer is heated, and then the chip is picked up from the radiation-curable wafer fixing layer 3 with the polyimide resin portion 3b on the back surface of the chip, and on a predetermined base, for example, It is used when manufacturing a semiconductor device having a structure in which the chip is mounted on a lead frame and molded with a resin so that a part or all of the back surface of the chip is in contact with the molding resin.
【００２４】本発明に係るウェハ貼着用粘着シート１
は、その断面図が図１に示されるように、基材フィルム
２とこの表面に形成された放射線硬化型ウェハ固定層３
とからなっており、使用前にはこの放射線硬化型ウェハ
固定層３を保護するため、図２に示すように放射線硬化
型ウェハ固定層３の上面に剥離性シート４を仮粘着して
おくことが好ましい。Adhesive sheet for wafer sticking 1 according to the present invention
As shown in the cross-sectional view of FIG. 1, the base film 2 and the radiation-curable wafer fixing layer 3 formed on the surface of the base film 2.
In order to protect the radiation-curable wafer fixing layer 3 before use, a release sheet 4 should be temporarily adhered to the upper surface of the radiation-curable wafer fixing layer 3 as shown in FIG. Is preferred.
【００２５】本発明に係るウェハ貼着用粘着シート１の
形状は、テープ状、ラベル状などあらゆる形状をとりう
る。基材フィルム２としては、耐水性および耐熱性に優
れているものが適し、特に合成樹脂フィルムが適する。
本発明のウェハ貼着用粘着シートでは、後記するよう
に、その使用に当り、電子線（ＥＢ）や紫外線（ＵＶ）
などの放射線照射が行われているので、ＥＢ照射の場合
は、該基材フィルム２は透明である必要はないが、ＵＶ
照射をして用いる場合は、有色であっても透明な材料で
ある必要がある。The wafer sticking pressure-sensitive adhesive sheet 1 according to the present invention may have any shape such as a tape shape and a label shape. As the base film 2, one having excellent water resistance and heat resistance is suitable, and a synthetic resin film is particularly suitable.
In the pressure-sensitive adhesive sheet for wafer sticking according to the present invention, as will be described later, in its use, an electron beam (EB) or an ultraviolet ray (UV) is used.
In the case of EB irradiation, the base film 2 does not need to be transparent, but UV irradiation is performed.
When used by irradiation, it must be a transparent material even if it is colored.
【００２６】このような基材フィルム２としては、具体
的には、ポリエチレンフィルム、ポリプロピレンフィル
ム、ポリ塩化ビニルフィルム、ポリエチレンテレフタレ
ートフィルム、ポリブチレンテレフタレートフィルム、
ポリブテンフィルム、ポリブタジエンフィルム、ポリウ
レタンフィルム、ポリメチルペンテンフィルム、エチレ
ン−酢酸ビニル共重合体フィルム、エチレン−（メタ）
アクリル酸共重合体フィルム、エチレン−（メタ）アク
リル酸メチル共重合体フィルム、エチレン−（メタ）ア
クリル酸エチル共重合体フイルム等が用いられる。また
これらの積層フイルムであってもよい。基材フィルム２
の膜厚は、通常は１０〜３００μｍ程度であり、好まし
くは５０〜２００μｍ程度である。Specific examples of such a base film 2 include polyethylene film, polypropylene film, polyvinyl chloride film, polyethylene terephthalate film, polybutylene terephthalate film,
Polybutene film, polybutadiene film, polyurethane film, polymethylpentene film, ethylene-vinyl acetate copolymer film, ethylene- (meth)
An acrylic acid copolymer film, an ethylene- (meth) acrylic acid methyl copolymer film, an ethylene- (meth) acrylic acid ethyl copolymer film or the like is used. Further, it may be a laminated film of these. Base film 2
Is usually about 10 to 300 μm, preferably about 50 to 200 μm.
【００２７】ウェハのダイシング後にエキスパンド処理
してチップ間隔を離間させる必要がある場合には、従来
と同様のポリ塩化ビニル、ポリエチレン等の長さ方向お
よび幅方向に延伸性を有する合成樹脂フィルムを基材と
して用いることが好ましい。When it is necessary to expand the chips by dipping the wafer after dicing the wafer, a synthetic resin film having stretchability in the length direction and the width direction, such as polyvinyl chloride or polyethylene, which is the same as the conventional one, is used. It is preferably used as a material.
【００２８】本発明に係るウェハ貼着用粘着シート１
は、上記のような基材フィルム２と、この基材フィルム
２上に形成された放射線硬化型ウェハ固定層３とから構
成されている。放射線硬化型ウェハ固定層３は、互いに
重ならないようにパターンコートされた放射線硬化型接
着剤部３ａとポリイミド系樹脂部３ｂとからなる。Adhesive sheet 1 for wafer sticking according to the present invention
Is composed of the base film 2 as described above and the radiation-curable wafer fixing layer 3 formed on the base film 2. The radiation-curable wafer fixing layer 3 is composed of a radiation-curable adhesive part 3a and a polyimide resin part 3b which are pattern-coated so as not to overlap each other.
【００２９】放射線硬化型接着剤部３ａの面積とポリイ
ミド系樹脂部３ｂの面積の比（放射線硬化型接着剤部３
ａ／ポリイミド系樹脂部３ｂ）は、１／１００〜１００
／１の範囲にあり、好ましくは１／５０〜５０／１、特
に好ましくは１／２〜２／１の範囲にある。The ratio of the area of the radiation curable adhesive portion 3a to the area of the polyimide resin portion 3b (the radiation curable adhesive portion 3
a / polyimide resin portion 3b) is 1/100 to 100
/ 1, preferably 1/50 to 50/1, particularly preferably 1/2 to 2/1.
【００３０】放射線硬化型接着剤部３ａとポリイミド系
樹脂部３ｂとは、互いに重ならないように、たとえば、
ストライプ状、ドット状、ネットワーク状、あるいはこ
れらを組み合わせたパターン状にコートされてなる。こ
のような放射線硬化型ウェハ固定層３は、基材フィルム
上に、放射線硬化型接着剤とポリイミド系樹脂とを、ロ
ール印刷法、スクリーン印刷法、あるいはナイフコータ
ー、マイクロダイ等を用いた塗布法により、所定のパタ
ーン状に塗工することにより形成することができる。The radiation curable adhesive portion 3a and the polyimide resin portion 3b are, for example,
It is coated in a stripe shape, a dot shape, a network shape, or a pattern shape in which these are combined. Such a radiation-curable wafer fixing layer 3 is formed by applying a radiation-curable adhesive and a polyimide resin onto a base film by a roll printing method, a screen printing method, or a coating method using a knife coater, a micro die, or the like. Thus, it can be formed by applying a predetermined pattern.
【００３１】放射線硬化型接着剤部３ａの厚みとポリイ
ミド系樹脂部３ｂの厚みは、ともに５〜３０μｍ程度で
あることが好ましく、特に５〜１５μｍ程度であること
が好ましい。また放射線硬化型接着剤部３ａの厚みとポ
リイミド系樹脂部３ｂの厚みは、ほぼ等しいことが好ま
しく、その厚みの差は、好ましくは５μｍ以下、特に好
ましくは３μｍ以下である。The thickness of the radiation curable adhesive portion 3a and the thickness of the polyimide resin portion 3b are both preferably about 5 to 30 μm, and particularly preferably about 5 to 15 μm. The thickness of the radiation curable adhesive portion 3a and the thickness of the polyimide resin portion 3b are preferably substantially equal, and the difference in thickness is preferably 5 μm or less, particularly preferably 3 μm or less.
【００３２】放射線硬化型接着剤部３ａを構成する放射
線硬化型接着剤としては従来公知のものが広く用いられ
うるが、その主剤としてはアクリル系粘着剤が好まし
く、具体的には、アクリル酸エステルを主たる構成単量
体単位とする単独重合体および共重合体から選ばれたア
クリル系重合体その他の官能性単量体との共重合体およ
びこれら重合体の混合物が用いられる。たとえば、アク
リル酸エステルとしては、メタアクリル酸エチル、メタ
アクリル酸ブチル、メタアクリル酸２−エチルヘキシ
ル、メタアクリル酸グリシジル、メタアクリル酸２−ヒ
ドロキシエチルなど、また上記のメタクリル酸をたとえ
ばアクリル酸に代えたものなども好ましく使用できる。As the radiation-curable adhesive constituting the radiation-curable adhesive portion 3a, conventionally known ones can be widely used, but an acrylic pressure-sensitive adhesive is preferable as the main component, specifically, an acrylic ester. Acrylic polymers selected from homopolymers and copolymers having as a main constituent monomer unit, copolymers with other functional monomers, and mixtures of these polymers are used. For example, acrylates include ethyl methacrylate, butyl methacrylate, 2-ethylhexyl methacrylate, glycidyl methacrylate, 2-hydroxyethyl methacrylate, and the like. Can be preferably used.
【００３３】さらに後述するオリゴマーとの相溶性を高
めるため、アクリル酸あるいはメタクリル酸、アクリロ
ニトリル、酢酸ビニルなどのモノマーを共重合させても
よい。これらのモノマーを重合して得られるアクリル系
重合体の分子量は、２．０×１０5〜１０．０×１０5で
あり、好ましくは、４．０×１０5〜８．０×１０5であ
る。Further, in order to enhance the compatibility with the oligomer to be described later, a monomer such as acrylic acid or methacrylic acid, acrylonitrile or vinyl acetate may be copolymerized. The molecular weight of the acrylic polymer obtained by polymerizing these monomers is 2.0 × 10 5 to 10.0 × 10 5 , and preferably 4.0 × 10 5 to 8.0 × 10 5 . is there.
【００３４】上記のような放射線硬化型接着剤層中に放
射線重合性化合物を含ませることによって、ウェハを切
断分離した後、該接着剤層に放射線を照射することによ
って、接着力を低下させることができる。このような放
射線重合性化合物としては、たとえば特開昭６０−１９
６，９５６号公報および特開昭６０−２２３，１３９号
公報に開示されているような光照射によって三次元網状
化しうる分子内に光重合性炭素−炭素二重結合を少なく
とも２個以上有する低分子量化合物が広く用いられ、具
体的には、トリメチロールプロパントリアクリレート、
テトラメチロールメタンテトラアクリレート、ペンタエ
リスリトールトリアクリレート、ペンタエリスリトール
テトラアクリレート、ジペンタエリスリトールモノヒド
ロキシペンタアクリレート、ジペンタエリスリトールヘ
キサアクリレートあるいは１，４−ブチレングリコール
ジアクリレート、１，６−ヘキサンジオールジアクリレ
ート、ポリエチレングリコールジアクリレート、市販の
オリゴエステルアクリレートなどが用いられる。By including a radiation-polymerizable compound in the radiation-curable adhesive layer as described above, the wafer is cut and separated, and then the adhesive layer is irradiated with radiation to reduce the adhesive strength. You can Examples of such radiation-polymerizable compounds include those disclosed in JP-A-60-19.
No. 6,956 and Japanese Patent Application Laid-Open No. 60-223,139, which have at least two or more photopolymerizable carbon-carbon double bonds in a molecule capable of being three-dimensionally reticulated by light irradiation. Molecular weight compounds are widely used, specifically, trimethylolpropane triacrylate,
Tetramethylol methane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate or 1,4-butylene glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol Diacrylate, commercially available oligoester acrylate, etc. are used.
【００３５】さらに放射線重合性化合物として、上記の
ようなアクリレート系化合物のほかに、ウレタンアクリ
レート系オリゴマーを用いることもできる。ウレタンア
クリレート系オリゴマーは、ポリエステル型またはポリ
エーテル型などのポリオール化合物と、多価イソシアネ
ート化合物たとえば２，４−トリレンジイソシアネー
ト、２，６−トリレンジイソシアネート、１，３−キシ
リレンジイソシアネート、１，４−キシリレンジイソシ
アネート、ジフェニルメタン４，４−ジイソシアネート
などを反応させて得られる末端イソシアネートウレタン
プレポリマーに、ヒドロキシル基を有するアクリレート
あるいはメタクリレートたとえば２−ヒドロキシエチル
アクリレートまたは２−ヒドロキシエチルメタクリレー
ト、２−ヒドロキシプロピルアクリレート、２−ヒドロ
キシプロピルメタクリレート、ポリエチレングリコール
アクリレート、ポリエチレングリコールメタクリレート
などを反応させて得られる。このウレタンアクリレート
系オリゴマーは、炭素−炭素二重結合を少なくとも１個
以上有する放射線重合性化合物である。Further, as the radiation-polymerizable compound, a urethane acrylate-based oligomer may be used in addition to the above-mentioned acrylate-based compound. The urethane acrylate-based oligomer is a polyol compound such as polyester type or polyether type, and a polyvalent isocyanate compound such as 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4. -Acrylate or methacrylate having a hydroxyl group, for example, a terminal isocyanate urethane prepolymer obtained by reacting xylylene diisocyanate, diphenylmethane 4,4-diisocyanate, etc., such as 2-hydroxyethyl acrylate or 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate , 2-hydroxypropyl methacrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate, etc. Obtained by. This urethane acrylate oligomer is a radiation polymerizable compound having at least one carbon-carbon double bond.
【００３６】このようなウレタンアクリレート系オリゴ
マーとして、特に分子量が３０００〜３００００、好ま
しくは３０００〜１００００、さらに好ましくは４００
０〜８０００であるものを用いると、半導体ウェハ裏面
が粗い場合にも、ウェハチップのピックアップ時にチッ
プ裏面に放射線硬化型接着剤が付着することがないため
好ましい。またウレタンアクリレート系オリゴマーを放
射線重合性化合物として用いる場合には、特開昭６０−
１９６，９５６号公報に開示されたような分子内に光重
合性炭素−炭素二重結合を少なくとも２個以上有する低
分子量化合物を用いた場合と比較して、粘着シートとし
て極めて優れたものが得られる。すなわち粘着シートの
放射線照射前の接着力は充分に大きく、また放射線照射
後には接着力が充分に低下してウェハチップのピックア
ップ時にチップ裏面に粘着剤が残存することはない。As such a urethane acrylate-based oligomer, the molecular weight is particularly 3,000 to 30,000, preferably 3,000 to 10,000, and more preferably 400.
It is preferable to use one having a thickness of 0 to 8000 because even when the back surface of the semiconductor wafer is rough, the radiation-curable adhesive does not adhere to the back surface of the chip when the wafer chip is picked up. When a urethane acrylate-based oligomer is used as a radiation-polymerizable compound, it is disclosed in JP-A-60-
As compared with the case of using a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in the molecule as disclosed in Japanese Patent Publication No. 196,956, an extremely excellent adhesive sheet is obtained. To be That is, the adhesive strength of the pressure-sensitive adhesive sheet before irradiation with radiation is sufficiently large, and after the irradiation of radiation, the adhesive strength is sufficiently reduced so that the pressure-sensitive adhesive does not remain on the back surface of the chip when the wafer chip is picked up.
【００３７】本発明における放射線硬化型接着剤中のア
クリル系粘着剤とウレタンアクリレート系オリゴマーの
配合比は、アクリル系粘着剤１００重量部に対してウレ
タンアクリレート系オリゴマーは５０〜９００重量部の
範囲の量で用いられることが好ましい。この場合には、
得られる粘着シートは初期の接着力が大きく、しかも放
射線照射後には接着力は大きく低下し、容易にウェハチ
ップを該粘着シートからピックアップすることができ
る。The compounding ratio of the acrylic adhesive and the urethane acrylate oligomer in the radiation-curable adhesive of the present invention is in the range of 50 to 900 parts by weight of the urethane acrylate oligomer based on 100 parts by weight of the acrylic adhesive. It is preferably used in an amount. In this case,
The adhesive sheet obtained has a large initial adhesive force, and the adhesive force is greatly reduced after irradiation with radiation, and the wafer chip can be easily picked up from the adhesive sheet.
【００３８】また上記の放射線硬化型接着剤中に、イソ
シアナート系硬化剤を混合することにより、初期の接着
力を任意の値に設定することができる。このような硬化
剤としては、具体的には多価イソシアネート化合物、た
とえば２，４−トリレンジイソシアネート、２，６−ト
リレンジイソシアネート、１，３−キシリレンジイソシ
アネート、１，４−キシレンジイソシアネート、ジフェ
ニルメタン−４，４’−ジイソシアネート、ジフェニル
メタン−２，４’−ジイソシアネート、３−メチルジフ
ェニルメタンジイソシアネート、ヘキサメチレンジイソ
シアネート、イソホロンジイソシアネート、ジシクロヘ
キシルメタン−４，４’−ジイソシアネート、ジシクロ
ヘキシルメタン−２，４’−ジイソシアネート、リジン
イソシアネートなどが用いられる。The initial adhesive force can be set to an arbitrary value by mixing the above radiation curable adhesive with an isocyanate type curing agent. Specific examples of such a curing agent include polyvalent isocyanate compounds such as 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate and diphenylmethane. -4,4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, Lysine isocyanate or the like is used.
【００３９】さらに上記の接着剤中に、ＵＶ照射用の場
合には、ＵＶ開始剤を混入することにより、ＵＶ照射に
よる重合硬化時間ならびにＵＶ照射量を少なくなること
ができる。Further, in the case of UV irradiation in the adhesive, by mixing a UV initiator, the polymerization and curing time by UV irradiation and the UV irradiation amount can be shortened.
【００４０】このようなＵＶ開始剤としては、具体的に
は、ベンゾイン、ベンゾインメチルエーテル、ベンゾイ
ンエチルエーテル、ベンゾインイソプロピルエーテル、
ベンジルジフェニルサルファイド、テトラメチルチウラ
ムモノサルファイド、アゾビスイソブチロニトリル、ジ
ベンジル、ジアセチル、β−クロールアンスラキノンな
どが挙げられる。Specific examples of such UV initiators include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether,
Benzyldiphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, dibenzyl, diacetyl, β-chloranthraquinone and the like can be mentioned.
【００４１】ポリイミド系樹脂部３ｂを構成するポリイ
ミド系樹脂は、側鎖または主鎖にイミド結合を有し、具
体的には、ポリイミド系、マレイミド系、ビスマレイミ
ド系、ポリアミドイミド系、ポリ（イミド・イソインド
ロキナゾリンジオンイミド）系等が挙げられ、これらの
樹脂単独もしくは２つ以上混合させて使用することがで
きる。これらの中でも特にポリイミド樹脂が好ましい。The polyimide-based resin constituting the polyimide-based resin portion 3b has an imide bond in the side chain or main chain, and specifically, polyimide-based, maleimide-based, bismaleimide-based, polyamide-imide-based, poly (imide) -Isoindoloquinazolinedione imide) type and the like can be used, and these resins can be used alone or in combination of two or more. Of these, a polyimide resin is particularly preferable.
【００４２】ポリイミド系樹脂の粘度は、好ましくは１
００〜１０００００、特に好ましくは１００００〜３０
０００程度である。この測定にはポリイミド樹脂をＮ−
メチルピロリドン中で固形３０％に調製された溶液を２
３℃でＢ型粘度計にて行なった。The viscosity of the polyimide resin is preferably 1
00 to 100,000, particularly preferably 10,000 to 30
It is about 000. For this measurement, use polyimide resin N-
2% of a solution prepared to 30% solids in methylpyrrolidone
The measurement was carried out with a B-type viscometer at 3 ° C.
【００４３】このようなポリイミド系樹脂の詳細は、た
とえば繊維学会誌（繊維と工業）第５０巻第３号（１９
９４年）、Ｐ−８５〜Ｐ−１２１に記載されている。本
発明において最も好ましいポリイミド樹脂は、一般に芳
香族ジアミンと芳香族テトラカルボン酸二無水物との混
合物（前駆体）からポリアミド酸（半硬化物）を合成
し、これを加熱により脱水環化（イミド化）することに
よって得られる（下記式参照）。Details of such a polyimide resin are described, for example, in the Journal of the Textile Society of Japan (Fiber and Industry), Vol. 50, No. 3, (19).
1994), P-85 to P-121. The most preferred polyimide resin in the present invention is generally a polyamic acid (semi-cured product) synthesized from a mixture (precursor) of an aromatic diamine and an aromatic tetracarboxylic dianhydride, which is heated for dehydration cyclization (imide). Can be obtained (see the following formula).
【００４４】[0044]
【化１】 Embedded image
【００４５】Ａｒを含むイミド結合部位およびＡｒ’と
しては、具体的には次表の芳香族基が任意の組合せで用
いられる。As the imide bond site containing Ar and Ar ', the aromatic groups shown in the following table are specifically used in any combination.
【００４６】[0046]
【表１】 [Table 1]
【００４７】[0047]
【表２】 [Table 2]
【００４８】このようなポリイミド樹脂の前駆体および
半硬化物は市販されており、本発明においては、たとえ
ばセミコファインＳＰ−８１０（商品名：東レ（株）
製）、セミコファインＳＰ−５１０（商品名：東レ
（株）製）等が好ましく用いられ、また、特開平５−３
３１４４４号公報等に記載の方法に準じて調製すること
もできる。Such polyimide resin precursors and semi-cured products are commercially available. In the present invention, for example, Semicofine SP-810 (trade name: Toray Industries, Inc.) is used.
Manufactured by Toray Industries, Ltd.) and Semicofine SP-510 (trade name: manufactured by Toray Industries, Inc.) are preferably used.
It can also be prepared according to the method described in Japanese Patent No. 31444.
【００４９】本発明の放射線硬化型ウェハ固定層３は、
上記のような放射線硬化型接着剤部３ａおよびポリイミ
ド系樹脂部３ｂとがパターンコートされてなるが、必要
に応じて放射線硬化型接着剤部３ａおよびポリイミド系
樹脂部３ｂの何れか一方または両方に、放射線照射によ
り着色する化合物を含有させることもできる。このよう
な放射線照射により、着色する化合物を放射線硬化型ウ
ェハ固定層３に含ませることによって、粘着シートに放
射線が照射された後には該シートは着色され、したがっ
て光センサーによってチップを検出する際に検出精度が
高まり、チップのピックアップ時に誤動作が生ずること
がない。また粘着シートに放射線が照射されたか否かが
目視により直ちに判明するという効果が得られる。The radiation-curable wafer fixing layer 3 of the present invention comprises
The radiation-curable adhesive portion 3a and the polyimide-based resin portion 3b are pattern-coated as described above, but either one or both of the radiation-curable adhesive portion 3a and the polyimide-based resin portion 3b may be applied as necessary. Alternatively, a compound which is colored by irradiation with radiation can be contained. By including a compound to be colored in the radiation-curable wafer fixing layer 3 by such irradiation of radiation, the adhesive sheet is colored after being irradiated with radiation, and therefore when the chip is detected by the optical sensor. The detection accuracy is improved, and no malfunction occurs when the chip is picked up. In addition, an effect is obtained that it is immediately possible to visually determine whether or not radiation has been applied to the adhesive sheet.
【００５０】放射線照射により着色する化合物は、放射
線の照射前には無色または淡色であるが、放射線の照射
により有色となる化合物であって、この化合物の好まし
い具体例としてはロイコ染料が挙げられる。ロイコ染料
としては、慣用のトリフェニルメタン系、フルオラン
系、フェノチアジン系、オーラミン系、スピロピラン系
のものが好ましく用いられる。具体的には３−［Ｎ−
（ｐ−トリルアミノ）］−７−アニリノフルオラン、３
−［Ｎ−（ｐ−トリル）−Ｎ−メチルアミノ］−７−ア
ニリノフルオラン、３−［Ｎ−（ｐ−トリル）−Ｎ−エ
チルアミノ］−７−アニリノフルオラン、３−ジエチル
アミノ−６−メチル−７−アニリノフルオラン、クリス
タルバイオレットラクトン、４，４’，４”−トリスジ
メチルアミノトリフェニルメタノール、４，４’，４”
−トリスジメチルアミノトリフェニルメタンなどが挙げ
られる。The compound which is colored by the irradiation of radiation is a compound which is colorless or light-colored before the irradiation of the radiation but becomes colored by the irradiation of the radiation, and a preferable specific example of this compound is a leuco dye. As the leuco dye, commonly used triphenylmethane-based, fluoran-based, phenothiazine-based, auramine-based and spiropyran-based dyes are preferably used. Specifically, 3- [N-
(P-tolylamino)]-7-anilinofluoran, 3
-[N- (p-tolyl) -N-methylamino] -7-anilinofluoran, 3- [N- (p-tolyl) -N-ethylamino] -7-anilinofluoran, 3-diethylamino -6-methyl-7-anilinofluoran, crystal violet lactone, 4,4 ', 4 "-trisdimethylaminotriphenylmethanol, 4,4', 4"
-Trisdimethylaminotriphenylmethane and the like.
【００５１】これらロイコ染料とともに好ましく用いら
れる顕色剤としては、従来から用いられているフェノー
ルホルマリン樹脂の初期重合体、芳香族カルボン酸誘導
体、活性白土などの電子受容体が挙げられ、さらに、色
調を変化させる場合は種々公知の発色剤を組合せて用い
ることもできる。Examples of the color developer that is preferably used with these leuco dyes include conventionally used phenol formalin resin prepolymers, aromatic carboxylic acid derivatives, and electron acceptors such as activated clay. When changing the value, various known color formers can be used in combination.
【００５２】このような放射線照射によって着色する化
合物は、一旦有機溶媒などに溶解された後に放射線硬化
型接着剤部３ａおよび／またはポリイミド樹脂部３ｂ中
に含ませてもよく、また微粉末状にして放射線硬化型ウ
ェハ固定層３中に含ませてもよい。この化合物は、放射
線硬化型ウェハ固定層３中に０．０１〜１０重量％好ま
しくは０．５〜５重量％の量で用いられることが望まし
い。該化合物が１０重量％を超えた量で用いられると、
粘着シートに照射される放射線がこの化合物に吸収され
すぎてしまうため、放射線硬化型接着剤の硬化が不十分
となることがあり、一方該化合物が０．０１重量％未満
の量で用いられると放射線照射時に粘着シートが充分に
着色しないことがあり、チップのピックアップ時に誤動
作が生じやすくなることがある。Such a compound which is colored by irradiation with radiation may be dissolved in an organic solvent or the like and then contained in the radiation-curable adhesive part 3a and / or the polyimide resin part 3b, or in the form of fine powder. It may be included in the radiation-curable wafer fixing layer 3. This compound is preferably used in the radiation-curable wafer fixing layer 3 in an amount of 0.01 to 10% by weight, preferably 0.5 to 5% by weight. When the compound is used in an amount exceeding 10% by weight,
The radiation applied to the pressure-sensitive adhesive sheet may be excessively absorbed by this compound, so that the radiation-curable adhesive may be insufficiently cured. On the other hand, if the compound is used in an amount less than 0.01% by weight. The adhesive sheet may not be sufficiently colored at the time of irradiation with radiation, and malfunction may easily occur at the time of picking up the chip.
【００５３】また場合によっては、放射線硬化型ウェハ
固定層（３放射線硬化型接着剤部３ａおよび／またはポ
リイミド樹脂部３ｂ）中に、光散乱性無機化合物粉末を
含有させることもできる。このような光散乱性無機化合
物粉末を放射線硬化型ウェハ固定層３に含ませることに
よって、たとえウェハなどの被接着面が何らかの理由に
よって灰色化あるいは黒色化しても、該粘着シートに紫
外線などの放射線を照射すると、灰色化あるいは黒色化
した部分でもその接着力が充分に低下し、したがってチ
ップのピックアップ時にチップ裏面に粘着剤が付着して
しまうことがなく、しかも放射線の照射前には充分な接
着力を有しているという効果が得られる。In some cases, the light-curable inorganic compound powder may be contained in the radiation-curable wafer fixing layer (three-radiation-curable adhesive part 3a and / or polyimide resin part 3b). By including such a light-scattering inorganic compound powder in the radiation-curable wafer fixing layer 3, even if the adherend surface such as a wafer becomes gray or black for some reason, the adhesive sheet is exposed to radiation such as ultraviolet rays. When the chip is picked up, the adhesive strength is sufficiently reduced even in the grayed or blackened part, and therefore the adhesive does not stick to the back surface of the chip when picking up the chip, and sufficient adhesion is obtained before irradiation with radiation. The effect of having power is obtained.
【００５４】この光散乱性無機化合物は、紫外線（Ｕ
Ｖ）あるいは電子線（ＥＢ）などの放射線が照射された
場合に、この放射線を乱反射することができるような化
合物であって、具体的には、シリカ粉末、アルミナ粉
末、シリカアルミナ粉末、マイカ粉末などが例示され
る。この光散乱性無機化合物は、上記のような放射線を
ほぼ完全に反射するものが好ましいが、もちろんある程
度放射線を吸収してしまうものも用いることができる。This light-scattering inorganic compound is
V) or a compound capable of irregularly reflecting radiation when irradiated with radiation such as electron beam (EB), specifically, silica powder, alumina powder, silica-alumina powder, mica powder And the like. The light-scattering inorganic compound preferably reflects the above-described radiation almost completely, but of course, a compound that absorbs the radiation to some extent can also be used.
【００５５】光散乱性無機化合物は粉末状であることが
好ましく、その粒径は１〜１００μｍ好ましくは１〜２
０μｍ程度であることが望ましい。この光散乱性無機化
合物は、放射線硬化型ウェハ固定層中に０．１〜１０重
量％好ましくは１〜４重量％の量で用いられることが望
ましい。該化合物を放射線硬化型ウェハ固定層中に１０
重量％を越えた量で用いると、放射線硬化型ウェハ固定
層の接着力が低下したりすることがあり、一方０．１重
量％未満であると、ウェハの被接着面が灰色化あるいは
黒色化した場合に、その部分に放射線照射しても、接着
力が充分に低下せずピックアップ時にチップ裏面に粘着
剤が残ることがある。The light-scattering inorganic compound is preferably in the form of powder and has a particle size of 1 to 100 μm, preferably 1 to 2.
Desirably, it is about 0 μm. It is desirable that the light-scattering inorganic compound is used in the radiation-curable wafer fixing layer in an amount of 0.1 to 10% by weight, preferably 1 to 4% by weight. 10% of the compound in the radiation-curable wafer fixing layer
If it is used in an amount exceeding 10% by weight, the adhesive strength of the radiation-curable wafer fixing layer may be reduced, while if it is less than 0.1% by weight, the adherend surface of the wafer becomes gray or black. In that case, even if the portion is irradiated with radiation, the adhesive force may not be sufficiently reduced, and the adhesive may remain on the back surface of the chip during pickup.
【００５６】放射線硬化型ウェハ固定層中に光散乱性無
機化合物粉末を添加することによって得られる粘着シー
トは、ウェハの被接着面が何らかの理由によって灰色化
あるいは黒色化したような場合に用いても、この灰色化
あるいは黒色化した部分に放射線が照射されると、この
部分においてもその接着力が充分に低下するのは、次の
ような理由であろうと考えられる。すなわち、本発明で
用いられる粘着シート１は放射線硬化型ウェハ固定層３
を有しているが、この放射線硬化型ウェハ固定層３に放
射線を照射すると、放射線硬化型ウェハ固定層３を構成
する放射線硬化型接着剤部３ａ中に含まれる放射線重合
性化合物が硬化してその接着力が低下することになる。
ところがウェハ面に何らかの理由によって灰色化あるい
は黒色化した部分が生ずることがある。このような場合
に放射線硬化型ウェハ固定層３に放射線を照射すると、
放射線は放射線硬化型ウェハ固定層３を通過してウェハ
面に達するが、もしウェハ面に灰色化あるいは黒色化し
た部分があるとこの部分では放射線が吸収されて、反射
することがなくなってしまう。このため本来放射線硬化
型接着剤の硬化に利用されるべき放射線が、灰色化ある
いは黒色化した部分では吸収されてしまって放射線硬化
型接着剤の硬化が不充分となり、接着力が充分には低下
しないことになる。したがってウェハチップのピックア
ップ時にチップ面に粘着剤が付着してしまうのであろう
と考えられる。The pressure-sensitive adhesive sheet obtained by adding the light-scattering inorganic compound powder to the radiation-curable wafer fixing layer can be used even when the adhered surface of the wafer is grayed or blackened for some reason. When the grayed or blackened portion is irradiated with radiation, it is considered that the adhesive strength of this portion is sufficiently reduced also for the following reason. That is, the pressure-sensitive adhesive sheet 1 used in the present invention is a radiation-curable wafer fixing layer 3
However, when the radiation-curable wafer fixing layer 3 is irradiated with radiation, the radiation-polymerizable compound contained in the radiation-curable adhesive part 3a forming the radiation-curable wafer fixing layer 3 is cured. The adhesive strength will be reduced.
However, a grayed or blackened portion may occur on the wafer surface for some reason. In such a case, when the radiation-curable wafer fixing layer 3 is irradiated with radiation,
The radiation passes through the radiation-curable wafer fixing layer 3 and reaches the wafer surface, but if there is a grayed or blackened portion on the wafer surface, the radiation is absorbed in this portion and is not reflected. Therefore, the radiation that should originally be used to cure the radiation-curable adhesive is absorbed in the grayed or blackened areas, and the curing of the radiation-curable adhesive becomes insufficient, and the adhesive strength is sufficiently reduced. Will not do. Therefore, it is considered that the adhesive will adhere to the chip surface when the wafer chip is picked up.
【００５７】ところが放射線硬化型ウェハ固定層３中に
光散乱性無機化合物粉末を添加すると、照射された放射
線はウェハ面に達するまでに該化合物と衝突して方向が
変えられる。このため、たとえウェハチップ面に灰色化
あるいは黒色化した部分があっても、この部分の上方の
領域にも乱反射された放射線が充分に入り込み、したが
ってこの灰色化あるいは黒色化した部分も充分に硬化す
る。このため、放射線硬化型ウェハ固定層中に光散乱性
無機化合物粉末を添加することによって、たとえウェハ
面に何らかの理由によって灰色化あるいは黒色化した部
分があっても、この部分で放射線硬化型接着剤の硬化が
不充分になることがなく、したがってチップのピックア
ップ時にチップ裏面に粘着剤が付着することがなくな
る。However, when the light-scattering inorganic compound powder is added to the radiation-curable wafer fixing layer 3, the irradiated radiation collides with the compound and changes its direction before reaching the wafer surface. For this reason, even if there is a grayed or blackened portion on the wafer chip surface, the diffusely reflected radiation sufficiently enters the area above this portion, and therefore this grayed or blackened portion is also sufficiently cured. To do. Therefore, by adding the light-scattering inorganic compound powder to the radiation-curable wafer fixing layer, even if there is a grayed or blackened portion on the wafer surface for some reason, the radiation-curable adhesive is used at this portion. Will not be insufficiently cured, and therefore the adhesive will not adhere to the back surface of the chip when the chip is picked up.
【００５８】さらに本発明では、基材フィルム中に砥粒
が分散されていてもよい。この砥粒は、粒径が０．５〜
１００μｍ好ましくは１〜５０μｍであって、モース硬
度は６〜１０好ましくは７〜１０である。具体的には、
グリーンカーボランダム、人造コランダム、オプティカ
ルエメリー、ホワイトアランダム、炭化ホウ素、酸化ク
ロム（ＩＩＩ）、酸化セリウム、ダイヤモンドパウダー
などが用いられる。このような砥粒は無色あるいは白色
であることが好ましい。このような砥粒は、基材フィル
ム２中に０．５〜７０重量％好ましくは５〜５０重量％
の量で存在している。このような砥粒は、切断ブレード
をウェハのみならず基材フィルム２にまでも切り込むよ
うな深さで用いる場合に、特に好ましく用いられる。Further, in the present invention, abrasive grains may be dispersed in the base film. This abrasive has a particle size of 0.5 to
The thickness is 100 μm, preferably 1 to 50 μm, and the Mohs hardness is 6 to 10, preferably 7 to 10. In particular,
Green carborundum, artificial corundum, optical emery, white alundum, boron carbide, chromium (III) oxide, cerium oxide, diamond powder and the like are used. Such abrasive grains are preferably colorless or white. Such abrasive grains are contained in the base film 2 in an amount of 0.5 to 70% by weight, preferably 5 to 50% by weight.
Are present in amounts. Such abrasive grains are particularly preferably used when the cutting blade is used at such a depth as to cut not only into the wafer but also into the base film 2.
【００５９】上記のような砥粒を基材フィルム中に含ま
せることによって、切断ブレードが基材フィルム中に切
り込んできて、切断ブレードに粘着剤が付着しても砥粒
の研磨効果により、目づまりを簡単に除去することがで
きる。By including the above-mentioned abrasive grains in the substrate film, even if the cutting blade cuts into the substrate film and the adhesive adheres to the cutting blade, the abrasive effect of the abrasive grains causes The clogging can be easily removed.
【００６０】本発明に係る半導体装置は、上記のような
ウェハ貼着用粘着シート１を用いて、ウェハプロセス終
了後の半導体ウェハをダイシングしてチップを製造し、
このチップをモールドすることで得られる。In the semiconductor device according to the present invention, a chip is manufactured by dicing the semiconductor wafer after the completion of the wafer process using the above-mentioned adhesive sheet 1 for wafer attachment.
It is obtained by molding this chip.
【００６１】以下、本発明に係る半導体装置ならびに該
半導体装置の製造方法について説明する。粘着シート１
の上面に剥離性シート４が設けられている場合には、該
シート４を除去し、次いで粘着シート１の放射線硬化型
ウェハ固定層３を上向きにして載置し、図３に示すよう
にして、この放射線硬化型ウェハ固定層３の上面にダイ
シング加工すべきウェハＡを貼着する。この貼着状態で
ウェハＡにダイシング、洗浄、乾燥の諸工程が加えられ
る。この際、放射線硬化型ウェハ固定層３の放射線硬化
型接着剤部３ａによりチップは粘着シート１に充分に接
着保持されているので、ウェハのダイシング、洗浄、乾
燥等の各工程の間にチップが脱落することはない。The semiconductor device according to the present invention and the method for manufacturing the semiconductor device will be described below. Adhesive sheet 1
If the releasable sheet 4 is provided on the upper surface of the sheet, the sheet 4 is removed, and then the radiation-curable wafer fixing layer 3 of the pressure-sensitive adhesive sheet 1 is placed face up, as shown in FIG. Then, the wafer A to be diced is attached to the upper surface of the radiation-curable wafer fixing layer 3. Various processes of dicing, cleaning, and drying are added to the wafer A in this state of attachment. At this time, since the chip is sufficiently adhered and held on the adhesive sheet 1 by the radiation-curable adhesive portion 3a of the radiation-curable wafer fixing layer 3, the chip is not removed during each process such as wafer dicing, cleaning, and drying. It does not fall out.
【００６２】次に、各ウェハチップを粘着シートからピ
ックアップして所定の基台上例えばリードフレームにマ
ウントするが、この際、ピックアップに先立ってあるい
はピックアップ時に、図４に示すように、紫外線（Ｕ
Ｖ）あるいは電子線（ＥＢ）などの電離性放射線Ｂを粘
着シート１の放射線硬化型ウェハ固定層３に照射し、放
射線硬化型ウェハ固定層３を構成する放射線硬化型接着
剤部３ａを重合硬化せしめる。このように放射線硬化型
ウェハ固定層３に放射線を照射して放射線硬化型接着剤
部３ａを重合硬化せしめると、粘着剤の有する接着力は
大きく低下し、わずかの接着力が残存するのみとなる。Next, each wafer chip is picked up from the adhesive sheet and mounted on a predetermined base, for example, a lead frame. At this time, as shown in FIG. 4, ultraviolet rays (U
V) or ionizing radiation B such as an electron beam (EB) is applied to the radiation-curable wafer fixing layer 3 of the adhesive sheet 1 to polymerize and cure the radiation-curable adhesive part 3a constituting the radiation-curable wafer fixing layer 3. Excuse me. When the radiation-curable wafer fixing layer 3 is irradiated with radiation in this way to polymerize and cure the radiation-curable adhesive part 3a, the adhesive force of the pressure-sensitive adhesive is greatly reduced, and only a slight adhesive force remains. .
【００６３】粘着シート１への放射線照射は、基材フィ
ルム２の放射線硬化型ウェハ固定層３が設けられていな
い面から行なうことが好ましい。したがって前述のよう
に、放射線としてＵＶを用いる場合には基材フィルム２
は光透過性であることが必要であるが、放射線としてＥ
Ｂを用いる場合には基材フィルム２は必ずしも光透過性
である必要はない。Radiation of the adhesive sheet 1 is preferably performed from the surface of the base film 2 on which the radiation-curable wafer fixing layer 3 is not provided. Therefore, as described above, when UV is used as the radiation, the base film 2
Needs to be light transmissive, but is
When B is used, the base film 2 need not necessarily be light transmissive.
【００６４】このようにウェハチップＡ1，Ａ2……が設
けられた部分の放射線硬化型ウェハ固定層３に放射線を
照射して、放射線硬化型ウェハ固定層３の接着力を低下
せしめた後、放射線硬化型ウェハ固定層３を加熱し、ポ
リイミド樹脂部３ｂのみをチップ体の裏面に転写する。
加熱は、たとえば赤外線又はヒータ等を用い、好ましく
は１００〜３００℃程度、特に好ましくは１００〜１５
０℃程度、好ましくは１〜３０秒、特に好ましくは１〜
５秒程度行われる。After the radiation curing type wafer fixing layer 3 in the portion where the wafer chips A 1 , A 2 ... Are provided in this way is irradiated with radiation to reduce the adhesive force of the radiation curing type wafer fixing layer 3. The radiation-curable wafer fixing layer 3 is heated to transfer only the polyimide resin portion 3b to the back surface of the chip body.
For heating, for example, infrared rays or a heater is used, and preferably about 100 to 300 ° C., particularly preferably 100 to 15 ° C.
0 ° C, preferably 1 to 30 seconds, particularly preferably 1 to
It takes about 5 seconds.
【００６５】このような加熱により、ポリイミド樹脂部
３ｂとチップ体裏面とが強固に接着する。加熱後、必要
あらば、所定の倍率でエキスパンドする。エキスパンド
を行うことによりチップ間隔が広がり、チップのピック
アップが容易になる。次いで、常法に従って基材フィル
ム２の下面から突き上げピン等によりピックアップすべ
きチップＡ1……を突き上げ、このチップＡ1……をたと
えば吸引コレットによりピックアップすると、ポリイミ
ド樹脂部３ｂが裏面に接着した状態でチップをピックア
ップすることができ、次いでこれを所定の基台上例えば
リードフレームにマウントする。By such heating, the polyimide resin portion 3b and the back surface of the chip body are firmly bonded. After heating, if necessary, expand at a predetermined magnification. Expanding widens the chip spacing and facilitates chip pick-up. Then, the chips A 1 ... to be picked up are pushed up from the lower surface of the base film 2 by a push-up pin or the like according to a conventional method, and the chips A 1 ... are picked up by, for example, a suction collet, and the polyimide resin portion 3b is bonded to the back surface. The chip can be picked up in this state and then mounted on a predetermined base, for example, a lead frame.
【００６６】本発明に係る半導体装置は、上記のように
して製造された、裏面にポリイミド樹脂部３ｂを有する
チップを、所定の基台上例えばリードフレームにマウン
トし、ボンディング後、常法にしたがって樹脂で封止す
ることによって得られ、図６に示すようなチップ裏面の
一部または全部がモールド樹脂に接触する構造を有す
る。このような本発明に係る半導体装置によれば、パッ
ケージクラック等が発生せず、信頼性を向上することが
できる。In the semiconductor device according to the present invention, the chip having the polyimide resin portion 3b on the back surface, which is manufactured as described above, is mounted on, for example, a lead frame on a predetermined base, and after bonding, according to a conventional method. It is obtained by sealing with a resin, and has a structure in which a part or all of the back surface of the chip comes into contact with the molding resin as shown in FIG. With such a semiconductor device according to the present invention, package cracks and the like do not occur and reliability can be improved.
【００６７】なお、この際に用いる封止樹脂としては、
クレゾールノボラック型エポキシ、ナフタレン型エポキ
シ、ビフェニル型エポキシあるいは芳香族多官能型エポ
キシを主原料とし、フェノールノボラック等の一般に用
いられる硬化剤およびシリカ、シリコーン、カーボン、
フィラー等を混合した樹脂が好ましく用いられる。As the sealing resin used at this time,
Cresol novolac type epoxy, naphthalene type epoxy, biphenyl type epoxy or aromatic polyfunctional epoxy as the main raw material, commonly used curing agents such as phenol novolac and silica, silicone, carbon,
A resin mixed with a filler or the like is preferably used.
【００６８】[0068]
【発明の効果】本発明に係るウェハ貼着用粘着シート
は、ウェハプロセス終了後のウェハを貼付し、ダイシン
グ加工してチップとし、このチップを用いてＬＯＣ構造
に代表されるようなチップ裏面の一部または全部がモー
ルド樹脂に接触する構造の半導体装置を製造するために
用いられる。このような本発明によれば、製造された半
導体装置にパッケージクラック等が発生せず、製品の信
頼性を向上できるようになる。EFFECT OF THE INVENTION The adhesive sheet for wafer sticking according to the present invention sticks a wafer after the wafer process, dices it into chips, and uses this chip to remove one of the backsides of a chip as represented by the LOC structure. It is used to manufacture a semiconductor device having a structure in which a part or all of it contacts the mold resin. According to the present invention, package cracks and the like do not occur in the manufactured semiconductor device, and the reliability of the product can be improved.
【００６９】[0069]
【実施例】以下本発明を実施例により説明するが、本発
明はこれら実施例に限定されるものではない。EXAMPLES The present invention will be described below with reference to examples, but the present invention is not limited to these examples.
【００７０】なお、以下の実施例および比較例におい
て、「パッケージ・クラック発生率」は次のようにして
評価した。パッケージクラック発生率 ダイシング後、放射線照射した粘着テープからチップを
取り出し、リードフレームにマウントし、ボンディング
後、所定のモールド樹脂（ビフェニール型エポキシ樹
脂）で高圧封止する。１７５℃、５時間を要してその樹
脂を硬化させ、パッケージとして完成させた後、８５
℃、８５％ＲＨの環境下に１６８時間放置する。その
後、２１５℃のＶＰＳ（Vapor Phase Soldering）（所
要時間：１分間）を３回行ない、走査型超音波探傷機Ｓ
ＡＴ（scanning acoustic tomography）で封止樹脂のク
ラックを検査する。投入検体数に対するクラック発生体
数の比率をパッケージクラック発生率とする。In the following examples and comparative examples, the "package crack occurrence rate" was evaluated as follows. Package crack generation rate After dicing, the chip is taken out from the adhesive tape irradiated with radiation, mounted on a lead frame, bonded, and then high-pressure sealed with a predetermined mold resin (biphenyl type epoxy resin). After curing the resin at 175 ° C for 5 hours to complete the package, 85
It is left for 168 hours in the environment of 85 ° C and 85% RH. After that, VPS (Vapor Phase Soldering) at 215 ° C. (required time: 1 minute) was performed three times, and the scanning ultrasonic flaw detector S was used.
Inspect the sealing resin for cracks with AT (scanning acoustic tomography). The ratio of the number of cracked bodies to the number of input samples is defined as the package cracking rate.
【００７１】また、ポリイミド系樹脂としては、ガラス
転移温度が２４０℃の熱可塑性ポリイミド樹脂（Ｎ−メ
チルピロリドン固形分３０％）を用い、放射線硬化型接
着剤としては、特公平５−５６１１２号公報実施例１に
記載の粘着剤を用いた。As the polyimide resin, a thermoplastic polyimide resin having a glass transition temperature of 240 ° C. (N-methylpyrrolidone solid content 30%) is used, and as a radiation curable adhesive, Japanese Patent Publication No. 56112/1993. The pressure-sensitive adhesive described in Example 1 was used.
【００７２】[0072]
【実施例１】厚さ５０μｍのポリエチレンテレフタレー
トフィルムの上に、ポリイミド系樹脂部（幅０．４ｍ
ｍ、厚さ１０μｍ）と放射線硬化型接着剤部（幅０．４
ｍｍ、厚さ１０μｍ）とをマイクロダイコーターを用い
て、それぞれストライプ状塗布（間隔０．１ｍｍ）し、
乾燥し、塗布面上に離型処理を施したポリエチレンテレ
フタレートの離型処理面を積層してウェハ貼着用粘着シ
ートを作成した。Example 1 On a polyethylene terephthalate film having a thickness of 50 μm, a polyimide resin portion (width 0.4 m)
m, thickness 10 μm) and radiation curable adhesive part (width 0.4
mm, thickness 10 μm) and stripe-shaped coating (interval 0.1 mm) using a micro die coater,
A release-treated surface of polyethylene terephthalate which had been dried and subjected to a release treatment was laminated on the coated surface to prepare a pressure-sensitive adhesive sheet for wafer sticking.
【００７３】得られたウェハ貼着用粘着シートを５イン
チ径のシリコンウェハに貼着し、９．０ｍｍ×９．０ｍ
ｍのチップサイズにダイシングした。その後、ＵＶ照射
装置を用いて紫外線照射を行った後、２４０℃に加熱し
たホットプレート上にウェハ貼着用粘着シートを下にし
て１．０ｋｇ／ｃｍ2 で圧着し、ウェハとポリイミド樹
脂部との接着力を向上させた。The obtained pressure-sensitive adhesive sheet for wafer sticking was stuck to a silicon wafer having a diameter of 5 inches to obtain 9.0 mm × 9.0 m.
It was diced to a chip size of m. Then, after irradiating ultraviolet rays using a UV irradiator, the wafer sticking pressure-sensitive adhesive sheet is placed on a hot plate heated to 240 ° C. at a pressure of 1.0 kg / cm 2 to bond the wafer and the polyimide resin part. Improved adhesion.
【００７４】さらに、ポリイミド樹脂部とともにチップ
をピックアップし、リードフレームにエポキシ接着剤で
ダイボンドし、ワイヤーボンドを行った。続いて、ビフ
ェニルタイプエポキシ樹脂によりモールドし、１．０ｍ
ｍ厚のＬＯＣ型の半導体装置を形成した。Further, the chip was picked up together with the polyimide resin portion, and the lead frame was die-bonded with an epoxy adhesive and wire-bonded. Then, mold with a biphenyl type epoxy resin, 1.0m
An m-thick LOC type semiconductor device was formed.
【００７５】ダイシング加工、ピックアップ加工、ダイ
ボンディング加工、モールド加工は、問題なく行うこと
ができた。パッケージクラックの評価結果を表３に示
す。The dicing process, the pickup process, the die bonding process, and the molding process could be performed without any problem. Table 3 shows the evaluation results of the package cracks.
【００７６】[0076]
【実施例２】ポリイミド系樹脂部および放射線硬化型接
着剤部の厚さを１５μｍとした以外は、実施例１と同様
の操作を行った。Example 2 The same operation as in Example 1 was performed except that the thickness of the polyimide resin portion and the radiation curable adhesive portion was set to 15 μm.
【００７７】ダイシング加工、ピックアップ加工、ダイ
ボンディング加工、モールド加工は、問題なく行うこと
ができた。パッケージクラックの評価結果を表３に示
す。The dicing process, the pickup process, the die bonding process, and the molding process could be performed without any problem. Table 3 shows the evaluation results of the package cracks.
【００７８】[0078]
【比較例１】ウェハ貼着用粘着シートに、ポリイミド樹
脂部を有しない紫外線硬化型粘着シートを用いて、実施
例１と同様に半導体装置を形成した。パッケージクラッ
クの評価結果を表３に示す。[Comparative Example 1] A semiconductor device was formed in the same manner as in Example 1 except that an ultraviolet-curable adhesive sheet having no polyimide resin portion was used as the adhesive sheet for wafer attachment. Table 3 shows the evaluation results of the package cracks.
【００７９】[0079]
【表３】 [Table 3]
【図１】本発明で用いるウェハ貼着用粘着シートの概略
断面図である。FIG. 1 is a schematic cross-sectional view of a pressure-sensitive adhesive sheet for wafer sticking used in the present invention.
【図２】本発明で用いるウェハ貼着用粘着シートの概略
断面図である。FIG. 2 is a schematic sectional view of a pressure-sensitive adhesive sheet for wafer sticking used in the present invention.
【図３】ウェハ貼着用粘着シートにウェハを貼付した状
態を示す。FIG. 3 shows a state in which a wafer is attached to an adhesive sheet for attaching wafers.
【図４】貼付したウェハをダイシングし、シートをエキ
スパンドし、放射線を照射し、加熱しているた状態を示
す。FIG. 4 shows a state in which the attached wafer is diced, the sheet is expanded, irradiated with radiation, and heated.
【図５】ピックアップしたチップの状態を示す。FIG. 5 shows a state of a picked-up chip.
【図６】ピックアップしたチップを用いて製造したＬＯ
Ｃ構造の半導体装置の断面図である。FIG. 6 is an LO manufactured using a picked-up chip.
It is sectional drawing of the semiconductor device of C structure.
【図７】従来例によるＬＯＣ構造の半導体装置の断面図
である。FIG. 7 is a cross-sectional view of a semiconductor device having a LOC structure according to a conventional example.
【図８】従来例によるダイパットにスリットのある構造
の半導体装置の断面図である。FIG. 8 is a cross-sectional view of a conventional semiconductor device having a slit in a die pad.
【図９】従来例によるＣＯＬ（chip on Lead）構造の半
導体装置の断面図である。FIG. 9 is a cross-sectional view of a semiconductor device having a COL (chip on lead) structure according to a conventional example.
１…ウェハ貼着用粘着シート ２…基材フィルム ３…放射線硬化型ウェハ固定層 ３ａ…放射線硬化型接着剤部 ３ｂ…ポリイミド樹脂部 ４…剥離性シート Ａ…ウェハ DESCRIPTION OF SYMBOLS 1 ... Adhesive sheet for wafer sticking 2 ... Base film 3 ... Radiation curable wafer fixing layer 3a ... Radiation curable adhesive part 3b ... Polyimide resin part 4 ... Releasable sheet A ... Wafer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 梅 原 則 人 大分県速見郡日出町大字川崎字高尾4260 日本テキサス・インスツルメンツ株式会社 日出工場内 (72)発明者 小 林 真 盛 埼玉県北葛飾郡吉川町吉川団地５街区11− 504 (72)発明者 江 部 和 義 埼玉県南埼玉郡白岡町下野田1375−19 ─────────────────────────────────────────────────── --- Continuation of the front page (72) Inventor Norito Umehara 4260 Takao, Kawasaki, Hiji-machi, Hayami-gun, Oita Prefecture Inside the Hiji Plant, Texas Instruments Japan, Inc. (72) Masamori Kobayashi Kita-Katsushika, Saitama Prefecture Yoshikawa-cho Yoshikawa housing complex 5 block 11-504 (72) Inventor Kazuyoshi Ebe 1375-19 Shimonoda, Shiraoka-cho, Minamisaitama-gun, Saitama Prefecture
Claims (5)
射線硬化型ウェハ固定層とからなり、 該放射線硬化型ウェハ固定層が、放射線硬化型接着剤部
とポリイミド系樹脂部とが互いに重ならないようにパタ
ーンコートされてなり、該放射線硬化型接着剤部の面積
と該ポリイミド系樹脂部の面積の比（放射線硬化型接着
剤部／ポリイミド系樹脂部）が１／１００〜１００／１
の範囲にあるウェハ貼着用粘着シートであって、 その表面に回路が形成されるウェハの裏面を前記放射線
硬化型ウェハ固定層に貼付し、この状態で前記ウェハを
チップ単体にダイシングし、洗浄し、乾燥し、放射線を
照射して前記放射線硬化型接着剤部の粘着力を低下さ
せ、次いで前記放射線硬化型ウェハ固定層を加熱し、そ
の後、前記チップをチップ裏面にポリイミド系樹脂部を
伴ってピックアップして、リードフレームにマウント
し、ボンディングし、モールドして、前記チップ裏面の
一部または全部がパッケージ成型用モールド樹脂に接す
る構造の半導体装置を製造する際に用いられるウェハ貼
着用粘着シート。1. A substrate film and a radiation-curable wafer fixing layer formed on the substrate film, wherein the radiation-curable wafer fixing layer has a radiation-curable adhesive part and a polyimide resin part overlapping each other. Pattern-coated so as not to be formed, and the ratio of the area of the radiation-curable adhesive part to the area of the polyimide-based resin part (radiation-curable adhesive part / polyimide-based resin part) is 1/100 to 100/1.
The pressure-sensitive adhesive sheet for wafer sticking in the range of, wherein the back surface of the wafer on which the circuit is formed is stuck to the radiation-curable wafer fixing layer, and in this state, the wafer is diced into chips and washed. , Drying, irradiating with radiation to reduce the adhesive force of the radiation-curable adhesive part, then heating the radiation-curable wafer fixing layer, and then the chip with the polyimide resin part on the back surface of the chip. A wafer sticking pressure-sensitive adhesive sheet used when manufacturing a semiconductor device having a structure in which a part or all of the back surface of the chip is picked up, mounted on a lead frame, bonded, and molded, and a part or all of the back surface of the chip is in contact with the molding resin for package molding.
射線硬化型ウェハ固定層とからなり、 該放射線硬化型ウェハ固定層が、放射線硬化型接着剤部
とポリイミド系樹脂部とが互いに重ならないようにパタ
ーンコートされてなり、該放射線硬化型接着剤部の面積
と該ポリイミド系樹脂部の面積の比（放射線硬化型接着
剤部／ポリイミド系樹脂部）が１／１００〜１００／１
の範囲にあるウェハ貼着用粘着シートの放射線硬化型ウ
ェハ固定層に、 その表面に回路が形成されるウェハの裏面を貼付し、こ
の状態で前記ウェハをチップ単体にダイシングし、洗浄
し、乾燥し、放射線を照射して前記放射線硬化型接着剤
部の粘着力を低下させ、次いで前記放射線硬化型ウェハ
固定層を加熱し、その後、前記チップをチップ裏面にポ
リイミド系樹脂部を伴ってピックアップして、リードフ
レームにマウントし、ボンディングし、モールドして得
られる、前記チップ裏面の一部または全部がパッケージ
成型用モールド樹脂に接する構造の半導体装置。2. A substrate film and a radiation-curable wafer fixing layer formed on the substrate film, wherein the radiation-curable wafer fixing layer has a radiation-curable adhesive part and a polyimide resin part overlapping each other. Pattern-coated so as not to become, and the ratio of the area of the radiation-curable adhesive part to the area of the polyimide-based resin part (radiation-curable adhesive part / polyimide-based resin part) is 1/100 to 100/1.
The radiation-curable wafer fixing layer of the pressure-sensitive adhesive sheet for wafer sticking in the range of 1) is pasted with the back surface of the wafer on which the circuit is formed, and in this state the wafer is diced into chips, washed and dried , Radiation to reduce the adhesive strength of the radiation-curable adhesive part, then heat the radiation-curable wafer fixing layer, and then pick up the chip with the polyimide resin part on the back surface of the chip. A semiconductor device having a structure in which a part or all of the back surface of the chip is in contact with a molding resin for package molding, which is obtained by mounting on a lead frame, bonding, and molding.
を特徴とする請求項２に記載の半導体装置。3. The semiconductor device according to claim 2, wherein the semiconductor device has a LOC structure.
射線硬化型ウェハ固定層とからなり、 該放射線硬化型ウェハ固定層が、放射線硬化型接着剤部
とポリイミド系樹脂部とが互いに重ならないようにパタ
ーンコートされてなり、該放射線硬化型接着剤部の面積
と該ポリイミド系樹脂部の面積の比（放射線硬化型接着
剤部／ポリイミド系樹脂部）が１／１００〜１００／１
の範囲にあるウェハ貼着用粘着シートの放射線硬化型ウ
ェハ固定層に、 その表面に回路が形成されるウェハの裏面を貼付し、こ
の状態で前記ウェハをチップ単体にダイシングし、洗浄
し、乾燥し、放射線を照射して前記放射線硬化型接着剤
部の粘着力を低下させ、次いで前記放射線硬化型ウェハ
固定層を加熱し、その後、前記チップをチップ裏面にポ
リイミド系樹脂部を伴ってピックアップして、リードフ
レームにマウントし、ボンディングし、モールドして、
前記チップ裏面の一部または全部がパッケージ成型用モ
ールド樹脂に接する構造の半導体装置を製造することを
特徴とする半導体装置の製造方法。4. A substrate film and a radiation-curable wafer fixing layer formed on the substrate film, wherein the radiation-curable wafer fixing layer has a radiation-curable adhesive part and a polyimide-based resin part overlapping each other. Pattern-coated so as not to be formed, and the ratio of the area of the radiation-curable adhesive part to the area of the polyimide-based resin part (radiation-curable adhesive part / polyimide-based resin part) is 1/100 to 100/1.
The radiation-curable wafer fixing layer of the pressure-sensitive adhesive sheet for wafer sticking in the range of 1) is pasted with the back surface of the wafer on which the circuit is formed, and in this state the wafer is diced into chips, washed and dried , Radiation to reduce the adhesive strength of the radiation-curable adhesive part, then heat the radiation-curable wafer fixing layer, and then pick up the chip with the polyimide resin part on the back surface of the chip. Mount on lead frame, bond, mold,
A method of manufacturing a semiconductor device, comprising manufacturing a semiconductor device having a structure in which a part or all of the back surface of the chip is in contact with a molding resin for package molding.
を特徴とする請求項４に記載の半導体装置の製造方法。5. The method of manufacturing a semiconductor device according to claim 4, wherein the semiconductor device has an LOC structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28532395A JP3523947B2 (en) | 1995-11-01 | 1995-11-01 | Adhesive sheet for attaching wafer, method of manufacturing semiconductor device using the same, and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28532395A JP3523947B2 (en) | 1995-11-01 | 1995-11-01 | Adhesive sheet for attaching wafer, method of manufacturing semiconductor device using the same, and semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09129577A true JPH09129577A (en) | 1997-05-16 |
| JP3523947B2 JP3523947B2 (en) | 2004-04-26 |
Family
ID=17690062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28532395A Expired - Fee Related JP3523947B2 (en) | 1995-11-01 | 1995-11-01 | Adhesive sheet for attaching wafer, method of manufacturing semiconductor device using the same, and semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3523947B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006129458A1 (en) * | 2005-05-30 | 2006-12-07 | Jsr Corporation | Wafer with fixing agent and method for producing wafer with fixing agent |
| US7712177B2 (en) | 2003-03-20 | 2010-05-11 | Nitto Denko Corporation | Cleaning sheet and its production method as well as transporting member having such cleaning sheet |
| CN110021548A (en) * | 2019-04-03 | 2019-07-16 | 江苏纳沛斯半导体有限公司 | A kind of technique reducing chip cutting edge chipping |
-
1995
- 1995-11-01 JP JP28532395A patent/JP3523947B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7712177B2 (en) | 2003-03-20 | 2010-05-11 | Nitto Denko Corporation | Cleaning sheet and its production method as well as transporting member having such cleaning sheet |
| KR101025981B1 (en) * | 2003-03-20 | 2011-03-30 | 닛토덴코 가부시키가이샤 | Carrying member including cleaning sheet, manufacturing method thereof and cleaning sheet |
| WO2006129458A1 (en) * | 2005-05-30 | 2006-12-07 | Jsr Corporation | Wafer with fixing agent and method for producing wafer with fixing agent |
| JP4784604B2 (en) * | 2005-05-30 | 2011-10-05 | Ｊｓｒ株式会社 | Manufacturing method of wafer with fixing agent |
| CN110021548A (en) * | 2019-04-03 | 2019-07-16 | 江苏纳沛斯半导体有限公司 | A kind of technique reducing chip cutting edge chipping |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3523947B2 (en) | 2004-04-26 |
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